Electric Double-Layer Gating of Two-Dimensional Field-Effect Transistors Using a Single-Ion Conductor

Ion-Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications

With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.

Hydrogel-Gated FETs in Neuromorphic Computing to Mimic Biological Signal: A Review

Hydrogel-gated synaptic transistors offer unique advantages, including biocompatibility, tunable electrical properties, being biodegradable, and having an ability to mimic biological synaptic plasticity. For processing massive data with ultralow power consumption due to high parallelism and human brain-like processing abilities, synaptic transistors have been widely considered for replacing von Neumann architecture-based traditional computers due to the parting of memory and control units. The crucial components mimic the complex biological signal, synaptic, and sensing systems. Hydrogel, as a gate dielectric, is the key factor for ionotropic devices owing to the excellent stability, ultra-high linearity, and extremely low operating voltage of the biodegradable and biocompatible polymers. Moreover, hydrogel exhibits ionotronic functions through a hybrid circuit of mobile ions and mobile electrons that can easily interface between machines and humans. To determine the high-efficiency neuromorphic chips, the development of synaptic devices based on organic field effect transistors (OFETs) with ultra-low power dissipation and very large-scale integration, including bio-friendly devices, is needed. This review highlights the latest advancements in neuromorphic computing by exploring synaptic transistor developments. Here, we focus on hydrogel-based ionic-gated three-terminal (3T) synaptic devices, their essential components, and their working principle, and summarize the essential neurodegenerative applications published recently. In addition, because hydrogel-gated FETs are the crucial members of neuromorphic devices in terms of cutting-edge synaptic progress and performances, the review will also summarize the biodegradable and biocompatible polymers with which such devices can be implemented. It is expected that neuromorphic devices might provide potential solutions for the future generation of interactive sensation, memory, and computation to facilitate the development of multimodal, large-scale, ultralow-power intelligent systems.

Strain-Induced 2H to 1T' Phase Transition in Suspended MoTe2 Using Electric Double Layer Gating

MoTe2 can be converted from the semiconducting (2H) phase to the semimetallic (1T') phase by several stimuli including heat, electrochemical doping, and strain. This type of phase transition, if reversible and gate-controlled, could be useful for low-power memory and logic. In this work, a gate-controlled and fully reversible 2H to 1T' phase transition is demonstrated via strain in few-layer suspended MoTe2 field effect transistors. Strain is applied by the electric double layer gating of a suspended channel using a single ion conducting solid polymer electrolyte. The phase transition is confirmed by simultaneous electrical transport and Raman spectroscopy. The out-of-plane vibration peak (A1g)─a signature of the 1T' phase─is observed when VSG ≥ 2.5 V. Further, a redshift in the in-plane vibration mode (E2g) is detected, which is a characteristic of a strain-induced phonon shift. Based on the magnitude of the shift, strain is estimated to be 0.2-0.3% by density functional theory. Electrically, the temperature coefficient of resistance transitions from negative to positive at VSG ≥ 2 V, confirming the transition from semiconducting to metallic. The approach to gate-controlled, reversible straining presented here can be extended to strain other two-dimensional materials, explore fundamental material properties, and introduce electronic device functionalities.

Toward Real-Time Blood Pressure Monitoring via High-Fidelity Iontronic Tonometric Sensors with High Sensitivity and Large Dynamic Ranges

Continuous, noninvasive blood pressure (CNIBP) monitoring provides valuable hemodynamic information that renders detection of the early onset of cardiovascular diseases. Wearable mechano-electric pressure sensors that mount on the skin are promising candidates for monitoring continuous blood pressure (BP) pulse waveforms due to their excellent conformability, simple sensing mechanisms, and convenient signal acquisition. However, it is challenging to acquire high-fidelity BP pulse waveforms since it requires highly sensitive sensors (sensitivity larger than 4 × 10-5 kPa-1 ) that respond linearly with pressure change over a large dynamic range, covering the typical BP range (5-25 kPa). Herein, this work introduces a high-fidelity, iontronic-based tonometric sensor (ITS) with high sensitivity (4.82 kPa-1 ), good linearity (R2 > 0.995), and a large dynamic range (up to 180% output change) over a broad working range (0 to 38 kPa). Additionally, the ITS demonstrates a low limit of detection at 40 Pa, a fast load response time (35 ms) and release time (35 ms), as well as a stable response over 5000 load per release cycles, paving ways for potential applications in human-interface interaction, electronic skins, and robotic haptics. This work further explores the application of the ITS in monitoring real-time, beat-to-beat BP by measuring the brachial and radial pulse waveforms. This work provides a rational design of a wearable pressure sensor with high sensitivity, good linearity, and a large dynamic range for real-time CNIBP monitoring.

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Electric-double-layer (EDL) gating can induce large capacitance densities (∼1-10 μF cm^-2) in two-dimensional (2D) semiconductors; however, several properties of the electrolyte limit performance. One property is the electrochemical activity which limits the gate voltage (V_G) that can be applied and therefore the maximum extent to which carriers can be modulated. A second property is electrolyte thickness, which sets the response speed of the EDL gate and therefore the time scale over which the channel can be doped. Typical thicknesses are on the order of micrometers, but thinner electrolytes (nanometers) are needed for very-large-scale-integration (VLSI) in terms of both physical thickness and the speed that accompanies scaling. In this study, finite element modeling of an EDL-gated field-effect transistor (FET) is used to self-consistently couple ion transport in the electrolyte to carrier transport in the semiconductor, in which density of states, and therefore quantum capacitance, is included. The model reveals that 50 to 65% of the applied potential drops across the semiconductor, leaving 35 to 50% to drop across the two EDLs. Accounting for the potential drop in the channel suggests that higher carrier densities can be achieved at larger applied V_G without concern for inducing electrochemical reactions. This insight is tested experimentally via Hall measurements of graphene FETs for which V_G is extended from ±3 to ±6 V. Doubling the gate voltage increases the sheet carrier density by an additional 2.3 × 10¹³ cm^-2 for electrons and 1.4 × 10¹³ cm^-2 for holes without inducing electrochemistry. To address the need for thickness scaling, the thickness of the solid polymer electrolyte, poly(ethylene oxide) (PEO):CsClO₄, is decreased from 1 μm to 10 nm and used to EDL gate graphene FETs. Sheet carrier density measurements on graphene Hall bars prove that the carrier densities remain constant throughout the measured thickness range (10 nm-1 μm). The results indicate promise for overcoming the physical and electrical limitations to VLSI while taking advantage of the ultrahigh carrier densities induced by EDL gating.

Photoluminescence Switching Effect in a Two-Dimensional Atomic Crystal

Two-dimensional materials are an emerging class of materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining increasing attention for use in field-effect transistors. Here, we report a photoluminescence switching effect based on single-layer WSe₂ transistors. Dual gates are used to tune the photoluminescence intensity. In particular, a side-gate is utilized to control the location of ions within a solid polymer electrolyte to form an electric double layer at the interface of electrolyte and WSe₂ and induce a vertical electric field. Additionally, a back-gate is used to apply a second vertical electric field. An on-off ratio of the light emission up to 90 was observed under constant pump light intensity. In addition, a blue shift of the photoluminescence line up to 36 meV was observed. We attribute this blue shift to the decrease of exciton binding energy due to the change of nonlinear in-plane dielectric constant and use it to determine the third-order off-diagonal susceptibility χ⁽³⁾ = 3.50 × 10^-19 m²/V².

CNSi/MXene/CNSi: Unique Structure with Specific Electronic Properties for Nanodevices

2D materials have been interesting for applications into nanodevices due to their intriguing physical properties. In this work, four types of unique structures are designed that are composed of MXenes and C/N-Si layers (CNSi), where MXene is sandwiched by the CNSi layers with different thicknesses, for their practical applications into integrated devices. The systematic calculations on their elastic constants, phonon dispersions, and thermodynamic properties show that these structures are stable, depending on the composition of MXene. It is found: 1) different from MXene or N-functionalized MXene (M₂ CN₂ ), SiN₂ /M₂ X/SiN₂ possess new electronic properties with free carriers only in the middle, leading to 2D free electron gas; 2) CNSi/MXene/CNSi shows an intrinsic Ohmic semiconductor-metal-semiconductor (S-M-S) contact, which is potential for applications into nanodevices; and 3) O/M₂ C/SiN₂ and N/M₂ C/OSiN are also stable and show different electronic properties, which can be semiconductor or metal as a whole depending on the interface. A method is further proposed to fabricate the 2D structures based on the industrial availability. The findings may provide a novel strategy to design and fabricate the 2D structures for their application into nanodevices and integrated circuits.

Ionic Liquid Containing Block Copolymer Dielectrics: Designing for High-Frequency Capacitance, Low-Voltage Operation, and Fast Switching Speeds

Polymerized ionic liquids (PILs) are a potential solution to the large-scale production of low-power consuming organic thin-film transistors (OTFTs). When used as the device gating medium in OTFTs, PILs experience a double-layer capacitance that enables thickness independent, low-voltage operation. PIL microstructure, polymer composition, and choice of anion have all been reported to have an effect on device performance, but a better structure property relationship is still required. A library of 27 well-defined, poly(styrene)-b-poly(1-(4-vinylbenzyl)-3-butylimidazolium-random-poly(ethylene glycol) methyl ether methacrylate) (poly(S)-b-poly(VBBI+[X]-r-PEGMA)) block copolymers, with varying PEGMA/VBBI+ ratios and three different mobile anions (where X = TFSI-, PF6 - or BF4 -), were synthesized, characterized and integrated into OTFTs. The fraction of VBBI+ in the poly(VBBI+[X]-r-PEGMA) block ranged from to 100 mol % and led to glass transition temperatures (T g) between -7 and 55 °C for that block. When VBBI+ composition was equal or above 50 mol %, the block copolymer self-assembled into well-ordered domains with sizes between 22 and 52 nm, depending on the composition and choice of anion. The block copolymers double-layer capacitance (C DL) and ionic conductivity (σ) were found to correlate to the polymer self-assembly and the T g of the poly(VBBI+[X]-r-PEGMA) block. Finally, the block copolymers were integrated into OTFTs as the gating medium that led to n-type devices with threshold voltages of 0.5-1.5 V while maintaining good electron mobilities. We also found that the greater the σ of the PIL, the greater the OTFT operating frequency could reach. However, we also found that C DL is not strictly proportional to OTFT output currents.

Single- versus Dual-Ion Conductors for Electric Double Layer Gating: Finite Element Modeling and Hall-Effect Measurements

Electric double layer (EDL) gating using a single-ion conductor is compared to a dual-ion conductor using both finite element modeling and Hall-effect measurements. Modified Nernst-Planck Poisson (mNPP) equations are used to calculate the ion density per unit area in a parallel plate capacitor geometry with a bulk ion concentration of 215 ≤ c_bulk ≤ 1782 mol/m³. With electrodes of equal size at a 2 V potential difference, the EDL ion density of the single-ion conductor is ∼7 × 10¹³ ions/cm², which is approximately 50% of the ion density induced in the dual-ion conductor. However, this difference is reduced to 8% when the electrode at which the cationic EDL forms is 10 times smaller than the counter electrode. Thus, for a field-effect transistor gated by a single-ion conductor, it is especially important to have a large gate-to-channel size ratio to achieve strong ion doping. The modeled ion densities are validated by Hall-effect measurements on graphene Hall bars gated by a polyethylene oxide (PEO)-based single-ion conductor. The sheet carrier density, n_S, is ∼2 × 10¹³ cm^-2 at V_g = 2 V, which is 3.5 times smaller than the predicted value and has the same order of magnitude as the n_s measured for a PEO-based, dual-ion conductor on the same graphene. The numerical modeling results can be approximated by a simple analysis of capacitors in series, where the EDLs are modeled as capacitors with thickness estimated by the sum of the Debye screening length and the Stern layer. The series of capacitor estimate agrees with the numerical modeling of the dual-ion conductor to within 10% and the single-ion conductor to within 30% from 0.25 to 2 V (c_bulk = 925 mol/m³); similar agreement is observed in the concentration range of 353-1650 mol/m³ for both single- and dual-ion conductors.

Emerging Opportunities for Electrostatic Control in Atomically Thin Devices

Electrostatic control of charge carrier concentration underlies the field-effect transistor (FET), which is among the most ubiquitous devices in the modern world. As transistors and related electronic devices have been miniaturized to the nanometer scale, electrostatics have become increasingly important, leading to progressively sophisticated device geometries such as the finFET. With the advent of atomically thin materials in which dielectric screening lengths are greater than device physical dimensions, qualitatively different opportunities emerge for electrostatic control. In this Review, recent demonstrations of unconventional electrostatic modulation in atomically thin materials and devices are discussed. By combining low dielectric screening with the other characteristics of atomically thin materials such as relaxed requirements for lattice matching, quantum confinement of charge carriers, and mechanical flexibility, high degrees of electrostatic spatial inhomogeneity can be achieved, which enables a diverse range of gate-tunable properties that are useful in logic, memory, neuromorphic, and optoelectronic technologies.

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions

A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO₄, is locked by thermal quenching (i.e., operating temperature < T_g (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO₄ gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < T_g. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.