Growth-Etch Metal-Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

Large-Scale Analysis of Defects in Atomically Thin Semiconductors using Hyperspectral Line Imaging

Point defects play a crucial role in determining the properties of atomically thin semiconductors. This work demonstrates the controlled formation of different types of defects and their comprehensive optical characterization using hyperspectral line imaging (HSLI). Distinct optical responses are observed in monolayer semiconductors grown under different stoichiometries using metal-organic chemical vapor deposition. HSLI enables the simultaneous measurement of 400 spectra, allowing for statistical analysis of optical signatures at close to a centimeter scale. The study discovers that chalcogen-rich samples exhibit remarkable optical uniformity due to reduced precursor accumulation compared to the metal-rich case. The utilization of HSLI as a facile and reliable characterization tool pushes the boundaries of potential applications for atomically thin semiconductors in future devices.

Resistive gas sensors for the detection of NH3gas based on 2D WS2, WSe2, MoS2, and MoSe2: a review

Transition metal dichalcogenides (TMDs) with a two-dimensional (2D) structure and semiconducting features are highly favorable for the production of NH3gas sensors. Among the TMD family, WS2, WSe2, MoS2, and MoSe2exhibit high conductivity and a high surface area, along with high availability, reasons for which they are favored in gas-sensing studies. In this review, we have discussed the structure, synthesis, and NH3sensing characteristics of pristine, decorated, doped, and composite-based WS2, WSe2, MoS2, and MoSe2gas sensors. Both experimental and theoretical studies are considered. Furthermore, both room temperature and higher temperature gas sensors are discussed. We also emphasized the gas-sensing mechanism. Thus, this review provides a reference for researchers working in the field of 2D TMD gas sensors.

Unleashing the potential of tungsten disulfide: Current trends in biosensing and nanomedicine applications

The discovery of graphene ignites a great deal of interest in the research and advancement of two-dimensional (2D) layered materials. Within it, semiconducting transition metal dichalcogenides (TMDCs) are highly regarded due to their exceptional electrical and optoelectronic properties. Tungsten disulfide (WS2) is a TMDC with intriguing properties, such as biocompatibility, tunable bandgap, and outstanding photoelectric characteristics. These features make it a potential candidate for chemical sensing, biosensing, and tumor therapy. Despite the numerous reviews on the synthesis and application of TMDCs in the biomedical field, no comprehensive study still summarizes and unifies the research trends of WS2 from synthesis to biomedical applications. Therefore, this review aims to present a complete and thorough analysis of the current research trends in WS2 across several biomedical domains, including biosensing and nanomedicine, covering antibacterial applications, tissue engineering, drug delivery, and anticancer treatments. Finally, this review also discusses the potential opportunities and obstacles associated with WS2 to deliver a new outlook for advancing its progress in biomedical research.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Dissolution enables dolomite crystal growth near ambient conditions

Crystals grow in supersaturated solutions. A mysterious counterexample is dolomite CaMg(CO3)2, a geologically abundant sedimentary mineral that does not readily grow at ambient conditions, not even under highly supersaturated solutions. Using atomistic simulations, we show that dolomite initially precipitates a cation-disordered surface, where high surface strains inhibit further crystal growth. However, mild undersaturation will preferentially dissolve these disordered regions, enabling increased order upon reprecipitation. Our simulations predict that frequent cycling of a solution between supersaturation and undersaturation can accelerate dolomite growth by up to seven orders of magnitude. We validated our theory with in situ liquid cell transmission electron microscopy, directly observing bulk dolomite growth after pulses of dissolution. This mechanism explains why modern dolomite is primarily found in natural environments with pH or salinity fluctuations. More generally, it reveals that the growth and ripening of defect-free crystals can be facilitated by deliberate periods of mild dissolution.

Temperature-Dependent Structural and Electrical Properties of Metal-Organic CVD MoS2 Films

Metal-Organic CVD method (MOCVD) allows for deposition of ultrathin 2D transition metal dichalcogenides (TMD) films of electronic quality onto wafer-scale substrates. In this work, the effect of temperature on structure, chemical states, and electronic qualities of the MOCVD MoS2 films were investigated. The results demonstrate that the temperature increase in the range of 650 °C to 950 °C results in non-monotonic average crystallite size variation. Atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy investigation has established the film crystal structure improvement with temperature increase in this range. At the same time, X-Ray photoelectron spectroscopy (XPS) method allowed to reveal non-stoichiometric phase fraction increase, corresponding to increased sulfur vacancies (VS) concentration from approximately 0.9 at.% to 3.6 at.%. Established dependency between the crystallite domains size and VS concentration suggests that these vacancies are form predominantly at the grain boundaries. The results suggest that an increased Vs concentration and enhanced charge carriers scattering at the grains' boundaries should be the primary reasons of films' resistivity increase from 4 kΩ·cm to 39 kΩ·cm.

Spin-valley Rashba monolayer laser

Direct-bandgap transition metal dichalcogenide monolayers are appealing candidates to construct atomic-scale spin-optical light sources owing to their valley-contrasting optical selection rules. Here we report on a spin-optical monolayer laser by incorporating a WS2 monolayer into a heterostructure microcavity supporting high-Q photonic spin-valley resonances. Inspired by the creation of valley pseudo-spins in monolayers, the spin-valley modes are generated from a photonic Rashba-type spin splitting of a bound state in the continuum, which gives rise to opposite spin-polarized ±K valleys due to emergent photonic spin-orbit interaction under inversion symmetry breaking. The Rashba monolayer laser shows intrinsic spin polarizations, high spatial and temporal coherence, and inherent symmetry-enabled robustness features, enabling valley coherence in the WS2 monolayer upon arbitrary pump polarizations at room temperature. Our monolayer-integrated spin-valley microcavities open avenues for further classical and non-classical coherent spin-optical light sources exploring both electron and photon spins.

Transparent Electronics for Wearable Electronics Application

Recent advancements in wearable electronics offer seamless integration with the human body for extracting various biophysical and biochemical information for real-time health monitoring, clinical diagnostics, and augmented reality. Enormous efforts have been dedicated to imparting stretchability/flexibility and softness to electronic devices through materials science and structural modifications that enable stable and comfortable integration of these devices with the curvilinear and soft human body. However, the optical properties of these devices are still in the early stages of consideration. By incorporating transparency, visual information from interfacing biological systems can be preserved and utilized for comprehensive clinical diagnosis with image analysis techniques. Additionally, transparency provides optical imperceptibility, alleviating reluctance to wear the device on exposed skin. This review discusses the recent advancement of transparent wearable electronics in a comprehensive way that includes materials, processing, devices, and applications. Materials for transparent wearable electronics are discussed regarding their characteristics, synthesis, and engineering strategies for property enhancements. We also examine bridging techniques for stable integration with the soft human body. Building blocks for wearable electronic systems, including sensors, energy devices, actuators, and displays, are discussed with their mechanisms and performances. Lastly, we summarize the potential applications and conclude with the remaining challenges and prospects.

Silver nanowire electrodes for transparent light emitting devices based on WS2monolayers

Transition metal dichalcogenide (TMDC) monolayers with their direct band gap in the visible to near-infrared spectral range have emerged over the past years as highly promising semiconducting materials for optoelectronic applications. Progress in scalable fabrication methods for TMDCs like metal-organic chemical vapor deposition (MOCVD) and the ambition to exploit specific material properties, such as mechanical flexibility or high transparency, highlight the importance of suitable device concepts and processing techniques. In this work, we make use of the high transparency of TMDC monolayers to fabricate transparent light-emitting devices (LEDs). MOCVD-grown WS₂is embedded as the active material in a scalable vertical device architecture and combined with a silver nanowire (AgNW) network as a transparent top electrode. The AgNW network was deposited onto the device by a spin-coating process, providing contacts with a sheet resistance below 10 Ω sq^-1and a transmittance of nearly 80%. As an electron transport layer we employed a continuous 40 nm thick zinc oxide (ZnO) layer, which was grown by atmospheric pressure spatial atomic layer deposition (AP-SALD), a precise tool for scalable deposition of oxides with defined thickness. With this, LEDs with an average transmittance over 60% in the visible spectral range, emissive areas of several mm²and a turn-on voltage of around 3 V are obtained.

Comparative Study between Sulfurized MoS2 from Molybdenum and Molybdenum Trioxide Precursors for Thin-Film Device Applications

Two-dimensional (2D) materials have been studied as an emerging class of nanomaterials owing to their attractive properties in nearly every field of science and technology. Molybdenum disulfide (MoS₂) is one of the more promising candidates of these atomically thin 2D materials for its technological potential. The facile synthesis of MoS₂ remains a matter of broad interest. In this study, MoS₂ was synthesized by chemical vapor deposition sulfurization at various temperatures (550 °C, 650 °C, and 750 °C) of either precursor molybdenum metal (Mo) or molybdenum trioxide (MoO₃) deposited on silicon/silicon dioxide (Si/SiO₂) via e-beam evaporation. Monolayer, bilayer, and few layers sulfurized samples have been grown and verified by Raman, photoluminescence spectroscopy, XRD, XPS, and AFM. MoO₃ sulfurization provided monolayer growth in comparison to Mo sulfurization under the same conditions and precursor thicknesses. Optical microscopy showed the homogeneous nature of grown samples. A main finding of this work is that MoO₃ sulfurization produced higher quality MoS₂ as compared to those grown by an Mo precursor. Device characteristics based on monolayer MoO₃ sulfurized MoS_2-x include nonvolatile resistive switching with I_on/I_off ≈ 10⁴ at a relatively low operating bias of ±1 V. In addition, field-effect transistor characteristics revealed p-type material growth with a carrier mobility ∼ 41 cm² V^-1 s^-1, which is in contrast to typically observed n-type characteristics.

Tungsten Oxide Mediated Quasi-van der Waals Epitaxy of WS2 on Sapphire

Conventional epitaxy plays a crucial role in current state-of-the art semiconductor technology, as it provides a path for accurate control at the atomic scale of thin films and nanostructures, to be used as the building blocks in nanoelectronics, optoelectronics, sensors, etc. Four decades ago, the terms "van der Waals" (vdW) and "quasi-vdW (Q-vdW) epitaxy" were coined to explain the oriented growth of vdW layers on 2D and 3D substrates, respectively. The major difference with conventional epitaxy is the weaker interaction between the epi-layer and the epi-substrates. Indeed, research on Q-vdW epitaxial growth of transition metal dichalcogenides (TMDCs) has been intense, with oriented growth of atomically thin semiconductors on sapphire being one of the most studied systems. Nonetheless, there are some striking and not yet understood differences in the literature regarding the orientation registry between the epi-layers and epi-substrate and the interface chemistry. Here we study the growth of WS₂ via a sequential exposure of the metal and the chalcogen precursors in a metal-organic chemical vapor deposition (MOCVD) system, introducing a metal-seeding step prior to the growth. The ability to control the delivery of the precursor made it possible to study the formation of a continuous and apparently ordered WO₃ mono- or few-layer at the surface of a c-plane sapphire. Such an interfacial layer is shown to strongly influence the subsequent quasi-vdW epitaxial growth of the atomically thin semiconductor layers on sapphire. Hence, here we elucidate an epitaxial growth mechanism and demonstrate the robustness of the metal-seeding approach for the oriented formation of other TMDC layers. This work may enable the rational design of vdW and quasi-vdW epitaxial growth on different material systems.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Two-Dimensional Transition Metal Dichalcogenide Based Biosensors: From Fundamentals to Healthcare Applications

There has been an exponential surge in reports on two-dimensional (2D) materials ever since the discovery of graphene in 2004. Transition metal dichalcogenides (TMDs) are a class of 2D materials where weak van der Waals force binds individual covalently bonded X-M-X layers (where M is the transition metal and X is the chalcogen), making layer-controlled synthesis possible. These individual building blocks (single-layer TMDs) transition from indirect to direct band gaps and have fascinating optical and electronic properties. Layer-dependent opto-electrical properties, along with the existence of finite band gaps, make single-layer TMDs superior to the well-known graphene that paves the way for their applications in many areas. Ultra-fast response, high on/off ratio, planar structure, low operational voltage, wafer scale synthesis capabilities, high surface-to-volume ratio, and compatibility with standard fabrication processes makes TMDs ideal candidates to replace conventional semiconductors, such as silicon, etc., in the new-age electrical, electronic, and opto-electronic devices. Besides, TMDs can be potentially utilized in single molecular sensing for early detection of different biomarkers, gas sensors, photodetector, and catalytic applications. The impact of COVID-19 has given rise to an upsurge in demand for biosensors with real-time detection capabilities. TMDs as active or supporting biosensing elements exhibit potential for real-time detection of single biomarkers and, hence, show promise in the development of point-of-care healthcare devices. In this review, we provide a historical survey of 2D TMD-based biosensors for the detection of bio analytes ranging from bacteria, viruses, and whole cells to molecular biomarkers via optical, electronic, and electrochemical sensing mechanisms. Current approaches and the latest developments in the study of healthcare devices using 2D TMDs are discussed. Additionally, this review presents an overview of the challenges in the area and discusses the future perspective of 2D TMDs in the field of biosensing for healthcare devices.

Wafer-scale MoS2 with water-vapor assisted showerhead MOCVD

Among numerous thin film synthesis methods, metalorganic chemical vapor deposition performed in a showerhead reactor is the most promising one for broad use in scalable and commercially adaptable two-dimensional material synthesis processes. Adapting the most efficient monolayer growth methodologies from tube-furnace systems to vertical-showerhead geometries allows us to overcome the intrinsic process limitations and improve the overall monolayer yield quality. Here, we demonstrate large-area, monolayer molybdenum disulphide growth by combining gas-phase precursor supply with unique tube-furnace approaches of utilizing sodium molybdate pre-seeding solution spincoated on a substrate along with water vapor added during the growth step. The engineered process yields a high-quality, 4-inch scale monolayer film on sapphire wafers. The monolayer growth coverage, average crystal size and defect density were evaluated using Raman and photoluminescence spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy and scanning transmission electron microscopy imaging. Our findings provide a direct step forward toward developing a reproducible and large-scale MoS₂ synthesis with commercial showerhead reactors.

Defect-suppressed submillimeter-scale WS2 single crystals with high photoluminescence quantum yields by alternate-growth-etching CVD

Defects, such as uncontrollable vacancies, will intensively degrade the material properties and device performance of CVD-grown transition metal dichalcogenides (TMDs). Although vacancies can be repaired by some post-processing measures, these treatments are usually time-consuming, complicated and may introduce uncontrollable chemical contaminants into TMDs. How to efficiently suppress the uncontrollable defects during CVD growth and acquire intrinsic high-quality CVD-grown TMDs without any after-treatment remains a critical challenge, and has not yet been well resolved. Here, an alternate-growth-etching (AGE) CVD method was demonstrated to fabricate defect-suppressed submillimeter-scale monolayer WS₂ single crystals. Compared with normal CVD, the grain size of the as-grown WS₂ can be enlarged by 4-5 times (∼520 μm) and the growth rate of ∼14.4 μm min^-1 is also at a high level compared to reported results. Moreover, AGE-CVD can efficiently suppress atomic vacancies in WS₂. In every growth-etching cycle, the etching of WS₂ occurs preferentially at the defective sites, which will be healed at the following growth stage. As a result, WS₂ monolayers obtained by AGE-CVD possess higher crystal quality, carrier mobility (8.3 cm² V^-1 s^-1) and PL quantum yield (QY, 52.6%) than those by normal CVD. In particular, such a PL QY is the highest value ever reported for in situ CVD-grown TMDs without any after-treatment, and is even comparable to the values of mechanically exfoliated samples. This AGE-CVD method is also appropriate for the synthesis of other high-quality TMD single crystals on a large-scale.

Thin-Film Coating Methods: A Successful Marriage of High-Quality and Cost-Effectiveness—A Brief Exploration

In this review, several cost-effective thin-film coating methods, which include dip-coating, spin-coating, spray-coating, blade-coating, and roll-coating, are presented. Each method has its own set of advantages and disadvantages depending on the proposed application. Not all of them are appropriate for large-scale production due to their certain limitations. That is why the coating method should be selected based on the type and size of the substrate, including the thickness and surface roughness of the required thin films. The sol–gel method offers several benefits, such as simplicity in fabrication, excellent film uniformity, the capacity to cover surfaces of any size and over vast areas, and a low processing temperature. Nevertheless, these coating methods are somewhat economical and well managed in low-budget laboratories. Moreover, these methods offer thin films with good homogeneity and low-surface roughness. Furthermore, some other thin-film deposition methods, for instance, physical vapor deposition (PVD) and chemical vapor deposition (CVD), are also discussed. Since CVD is not restricted to line-of-sight deposition, a characteristic shared by sputtering, evaporation, and other PVD methods, many manufacturing methods favor it. However, these techniques require sophisticated equipment and cleanroom facilities. We aim to provide the pros and cons of thin-film coating methods and let the readers decide the suitable coating technique for their specific application.

Surface Diffusion-Limited Growth of Large and High-Quality Monolayer Transition Metal Dichalcogenides in Confined Space of Microreactor

Transition metal dichalcogenides (TMDCs), including MoS₂ and WS₂, are potential candidates for next-generation semiconducting materials owing to their atomically thin structure and strong optoelectrical responses, which allow for flexible optoelectronic applications. Monolayer TMDCs have been grown utilizing chemical vapor deposition (CVD) techniques. Enhancing the domain size with high crystallinity and forming heterostructures are important topics for practical applications. In this study, the size of monolayer WS₂ increased via the vapor-liquid-solid growth-based CVD technique utilizing the confined space of the substrate-stacked microreactor. The use of spin-coated metal salts (Na₂WO₄ and Na₂MoO₄) and organosulfur vapor allowed us to precisely control the source supply and investigate the growth in a systematic manner. We obtained a relatively low activation energy for growth (1.02 eV), which is consistent with the surface diffusion-limited growth regime observed in the confined space. Through systematic photoluminescence (PL) analysis, we determined that a growth temperature of ∼820 °C is optimal for producing high-quality WS₂ with a narrow PL peak width (∼35 meV). By controlling the source balance of W and S, we obtained large-sized fully monolayered WS₂ (∼560 μm) and monolayer WS₂ with bilayer spots (∼1100 μm). Combining two distinct sources of transition metals, WS₂/MoS₂ lateral heterostructures were successfully created. In electrical transport measurements, the monolayer WS₂ grown under optimal conditions has a high on-current (∼70 μA/μm), on/off ratio (∼5 × 10⁸), and a field-effect mobility of ∼7 cm²/(V s). The field-effect transistor displayed an intrinsic photoresponse with wavelength selectivity that originated from the photoexcited carriers.

Low-defect-density WS2 by hydroxide vapor phase deposition

Two-dimensional (2D) semiconducting monolayers such as transition metal dichalcogenides (TMDs) are promising channel materials to extend Moore’s Law in advanced electronics. Synthetic TMD layers from chemical vapor deposition (CVD) are scalable for fabrication but notorious for their high defect densities. Therefore, innovative endeavors on growth reaction to enhance their quality are urgently needed. Here, we report that the hydroxide W species, an extremely pure vapor phase metal precursor form, is very efficient for sulfurization, leading to about one order of magnitude lower defect density compared to those from conventional CVD methods. The field-effect transistor (FET) devices based on the proposed growth reach a peak electron mobility ~200 cm²/Vs (~800 cm²/Vs) at room temperature (15 K), comparable to those from exfoliated flakes. The FET device with a channel length of 100 nm displays a high on-state current of ~400 µA/µm, encouraging the industrialization of 2D materials.

Chemical vapor deposition enables the scalable production of 2D semiconductors, but the grown materials are usually affected by high defect densities. Here, the authors report a hydroxide vapour phase deposition method to synthesize wafer-scale monolayer WS₂ with reduced defect density and electrical properties comparable to those of exfoliated flakes.

Optical Thin Films Fabrication Techniques-Towards a Low-Cost Solution for the Integrated Photonic Platform: A Review of the Current Status

In the past few decades, several methods concerning optical thin films have been established to facilitate the development of integrated optics. This paper provides a brief depiction of different techniques for implementing optical waveguide thin films that involve chemical, physical, and refractive index modification methods. Recent advances in these fabrication methods are also been presented. Most of the methods developed for the realization of the thin-films are quite efficient, but they are expensive and require sophisticated equipment. The major interest of the scientists is to develop simple and cost-effective methods for mass production of optical thin films resulting in the effective commercialization of the waveguide technology. Our research group is focused on developing a silica-titania optical waveguide platform via the sol-gel dip-coating method and implementing active and passive optical elements via the wet etching method. We are also exploring the possibility of using nanoimprint lithography (NIL) for patterning these films so that the fabrication process is efficient and economical. The recent developments of this platform are discussed. We believe that silica-titania waveguide technology developed via the sol-gel dip-coating method is highly attractive and economical, such that it can be commercialized for applications such as sensing and optical interconnects.

Synthesis of WS2 by Chemical Vapor Deposition: Role of the Alumina Crucible

The role of the alumina crucible for the tungsten disulfide (WS2) growth on silicon dioxide substrates (SiO2/Si) under atmospheric pressure chemical vapor deposition (APCVD) was investigated. Both synthesis and properties of the APCVD-WS2 depend on the number of growth cycles when using the same alumina crucible. It was discovered that there is an ideal condition for the material’s synthesis, which is characterized by an increase in the photoluminescence (PL) yield and larger WS2 triangles. It usually happens for the first three growth cycles. For the fourth cycle and beyond, the PL decreases gradually. Simultaneously, atomic force microscopy images revealed no important changes in the topography of the WS2 flakes. As a function of the number of synthesis cycles, the progressive decrease in PL yield could be associated with materials with a higher density of defects, as identified by the LA(M)/A1g(M)−LA(M) ratio from Raman data using the green line.

Controllable Preparation of 2D Vertical van der Waals Heterostructures and Superlattices for Functional Applications

2D van der Waals heterostructures (vdWHs) and superlattices (SLs) with exotic physical properties and applications for new devices have attracted immense interest. Compared to conventionally bonded heterostructures, the dangling-bond-free surface of 2D layered materials allows for the feasible integration of various materials to produce vdWHs without the requirements of lattice matching and processing compatibility. The quality of interfaces in artificially stacked vdWHs/vdWSLs and scalability of production remain among the major challenges in the field of 2D materials. Fortunately, bottom-up methods exhibit relatively high controllability and flexibility. The growth parameters, such as the temperature, precursors, substrate, and carrier gas, can be carefully and comprehensively controlled to produce high-quality interfaces and wafer-scale products of vdWHs/vdWSLs. This review focuses on three types of bottom-up methods for the assembly of vdWHs and vdWSLs with atomically clean and electronically sharp interfaces: chemical/physical vapor deposition, metal-organic chemical vapor deposition, and ultrahigh vacuum growth. These methods can intuitively illustrate the great flexibility and controllability of bottom-up methods for the preparation of vdWHs/vdWSLs. The latest progress in vdWHs and vdWSLs, related physical phenomena, and (opto)electronic devices are summarized. Finally, the authors discuss current challenges and future perspectives in the synthesis and application of vdWHs and vdWSLs.

Gas-Phase Alkali Metal-Assisted MOCVD Growth of 2D Transition Metal Dichalcogenides for Large-Scale Precise Nucleation Control

Advances in large-area and high-quality 2D transition metal dichalcogenides (TMDCs) growth are essential for semiconductor applications. Here, the gas-phase alkali metal-assisted metal-organic chemical vapor deposition (GAA-MOCVD) of 2D TMDCs is reported. It is determined that sodium propionate (SP) is an ideal gas-phase alkali-metal additive for nucleation control in the MOCVD of 2D TMDCs. The grain size of MoS₂ in the GAA-MOCVD process is larger than that in the conventional MOCVD process. This method can be applied to the growth of various TMDCs (MoS₂ , MoSe₂ , WSe₂ , and WSe₂ ) and the generation of large-scale continuous films. Furthermore, the growth behaviors of MoS₂ under different SP and oxygen injection time conditions are systematically investigated to determine the effects of SP and oxygen on nucleation control in the GAA-MOCVD process. It is found that the combination of SP and oxygen increases the grain size and nucleation suppression of MoS₂ . Thus, the GAA-MOCVD with a precise and controllable supply of a gas-phase alkali metal and oxygen allows achievement of optimum growth conditions that maximizes the grain size of MoS₂ . It is expected that GAA-MOCVD can provide a way for batch fabrication of large-scale atomically thin electronic devices based on 2D semiconductors.

Two-Dimensional Field-Effect Transistor Sensors: The Road toward Commercialization

The evolutionary success in information technology has been sustained by the rapid growth of sensor technology. Recently, advances in sensor technology have promoted the ambitious requirement to build intelligent systems that can be controlled by external stimuli along with independent operation, adaptivity, and low energy expenditure. Among various sensing techniques, field-effect transistors (FETs) with channels made of two-dimensional (2D) materials attract increasing attention for advantages such as label-free detection, fast response, easy operation, and capability of integration. With atomic thickness, 2D materials restrict the carrier flow within the material surface and expose it directly to the external environment, leading to efficient signal acquisition and conversion. This review summarizes the latest advances of 2D-materials-based FET (2D FET) sensors in a comprehensive manner that contains the material, operating principles, fabrication technologies, proof-of-concept applications, and prototypes. First, a brief description of the background and fundamentals is provided. The subsequent contents summarize physical, chemical, and biological 2D FET sensors and their applications. Then, we highlight the challenges of their commercialization and discuss corresponding solution techniques. The following section presents a systematic survey of recent progress in developing commercial prototypes. Lastly, we summarize the long-standing efforts and prospective future development of 2D FET-based sensing systems toward commercialization.

Salt-assisted chemical vapor deposition of two-dimensional transition metal dichalcogenides

Salt-assisted chemical vapor deposition (SA-CVD), which uses halide salts (e.g., NaCl, KBr, etc.) and molten salts (e.g., Na2MoO4, Na2WO4, etc.) as precursors, is one of the most popular methods favored for the fabrication of two-dimensional (2D) materials such as atomically thin metal chalcogenides, graphene, and h-BN. In this review, the distinct functions of halogens (F, Cl, Br, I) and alkali metals (Li, Na, K) in SA-CVD are first clarified. Based on the current development in SA-CVD growth and its related reaction modes, the existing methods are categorized into the Salt 1.0 (halide salts-based) and Salt 2.0 (molten salts-based) techniques. The achievements, advantages, and limitations of each technique are discussed in detail. Finally, new perspectives are proposed for the application of SA-CVD in the synthesis of 2D transition metal dichalcogenides for advanced electronics.

Radiation damage and abnormal photoluminescence enhancement of multilayer MoS2under neutron irradiation

In this work, neutron irradiation effects on the optical property of multilayer MoS₂have been investigated in depth. Our results display that the intensity of the photoluminescence (PL) spectra of MoS₂flakes tends to slightly decrease after exposed to neutron irradiation with low fluence of 4.0 × 10⁸n/cm². An unexpected improvement of PL intensity, however, is observed when the irradiation fluence accumulates to 3.2 × 10⁹n/cm². Combined with the experimental results and first-principles calculations, neutron irradiation damage effects of multilayer MoS₂are analyzed deeply. Sulfur vacancy (V_S) is found to be responsible for the attenuation of the PL intensity as a major defect. In addition, our results reveal that the adsorbed hydroxyl groups (OH) and oxygen atoms (O) on the surface of MoS₂flakes not only promote the transition from trion excitons to neutral excitons, but also repair theV_Sin MoS₂, both of which contribute to the enhancement of luminescence properties. The detailed evolution process of irradiation-induced defects is discussed to reveal the microscopic mechanism of the significantly difference in luminescence intensity of MoS₂under different irradiation stages. This work has great significance for evaluating the neutron radiation hardness of multilayer MoS₂, which is helpful to enrich the fundamental research on neutron irradiation effects.

Wafer-Scale Production of Transition Metal Dichalcogenides and Alloy Monolayers by Nanocrystal Conversion for Large-Scale Ultrathin Flexible Electronics

Two-dimensional (2D) transition metal dichalcogenide (TMD) layers are unit-cell thick materials with tunable physical properties according to their size, morphology, and chemical composition. Their transition of lab-scale research to industrial-scale applications requires process development for the wafer-scale growth and scalable device fabrication. Herein, we report on a new type of atmospheric pressure chemical vapor deposition (APCVD) process that utilizes colloidal nanoparticles as process-scalable precursors for the wafer-scale production of TMD monolayers. Facile uniform distribution of nanoparticle precursors on the entire substrate leads to the wafer-scale uniform synthesis of TMD monolayers with the controlled size and morphology. Composition-controlled TMD alloy monolayers with tunable bandgaps can be produced by simply mixing dual nanoparticle precursor solutions in the desired ratio. We also demonstrate the fabrication of ultrathin field-effect transistors and flexible electronics with uniformly controlled performance by using TMD monolayers.

Chemical Etching of Screw Dislocated Transition Metal Dichalcogenides

Chemical etching can create novel structures inaccessible by growth and provide complementary understanding on the growth mechanisms of complex nanostructures. Screw dislocation-driven growth influences the layer stackings of transition metal dichalcogenides (MX₂) resulting in complex spiral morphologies. Herein, we experimentally and theoretically study the etching of screw dislocated WS₂ and WSe₂ nanostructures using H₂O₂ etchant. The kinetic Wulff constructions and Monte Carlo simulations establish the etching principles of single MX₂ layers. Atomic force microscopy characterization reveals diverse etching morphology evolution behaviors around the dislocation cores and along the exterior edges, including triangular, hexagonal, or truncated hexagonal holes and smooth or rough edges. These behaviors are influenced by the edge orientations, layer stackings, and the strain of screw dislocations. Ab initio calculation and kinetic Monte Carlo simulations support the experimental observations and provide further mechanistic insights. This knowledge can help one to understand more complex structures created by screw dislocations through etching.