Broken-Gap PtS2/WSe2 van der Waals Heterojunction with Ultrahigh Reverse Rectification and Fast Photoresponse

Highly Stable and Integrable Graphene/Molybdenum Disulfide Heterojunction Field-Effect Transistor-Based miRNA Biosensor

MicroRNAs (miRNAs) are important noncoding RNA molecules that participate in gene regulation and are widely associated with the occurrence and development of various cancers. Developing rapid, highly sensitive, low-cost, and highly stable miRNA detection methods is of great significance for clinical diagnosis. Field-effect transistors (FETs) based on two-dimensional (2D) materials have been proven to have great potential in the field of miRNA detection due to their label-free, rapid, highly sensitive, low-power, and portable features. However, biosensors based on 2D material FETs require the application of an external gate voltage in solution, which seriously hinders the integration, miniaturization, and signal stability of the devices. This study proposes a graphene-molybdenum disulfide heterojunction (G/MoS2) FET biosensing platform to detect miRNA-21 and miRNA-155 without the need for an external gate voltage. The results demonstrate a detection time of approximately 30 min, a linear response range spanning from 10 fM to 10 nM, and limits of detection of 6.06 fM for miRNA-21 and 2.59 fM for miRNA-155. Through comparative experiments, the biosensor shows excellent selectivity and can distinguish target miRNAs from nontarget miRNAs. The G/MoS2 FET biosensor developed in this study provides a technical platform for miRNA detection and has a broad application prospect, especially in the early diagnosis of diseases and the screening of biomarkers.

Direct orientational epitaxy of wafer-scale 2D van der Waals heterostructures of metal dichalcogenides

Two-dimensional (2D) van der Waals (vdW) heterostructures have emerged as a groundbreaking candidate for future integrated circuits due to their tunable band structures, atomically sharp interfaces and seamless compatibility with complementary metal-oxide-semiconductor technologies. Despite their promise, existing synthesis methods, such as mechanical transfer and vapor-phase conversion, struggle to achieve the high-quality, scalable production for practical applications. In response to these longstanding challenges, our study unveils for the first time the direct epitaxial growth of wafer-scale 2D vdW heterostructures (MoS[Formula: see text]/SnS[Formula: see text]) with exceptional quality and uniformity. This achievement is made possible through fundamentally enhancing the adsorption interactions between intermediates and the underlying material. The heterostructures display pristine, defect-free interfaces, consistent crystal orientation and wafer-level thickness uniformity. The Raman peak shifts of MoS[Formula: see text] and SnS[Formula: see text] are constrained to below 0.5 cm[Formula: see text] across the entire wafer, with intensity deviations maintained within an impressive 2%, and thickness uniformity surpassing 99.5%. Owing to their exceptional crystallinity and interface quality, the heterostructures demonstrate extraordinary electron and hole transfer capabilities, showcasing a prominent rectification effect and an astounding responsivity of [Formula: see text] A/W, averaged from 30 devices. Our study signifies a pivotal advancement for the integration of 2D materials into semiconductor technologies, paving the way for next-generation integrated circuits.

Engineering energy bands in 0D-2D hybrid photodetectors: Cu-doped InP quantum dots on a type-III SnSe2/MoTe2 heterojunction

Two-dimensional (2D) self-driven photodetectors have emerged as a compelling area of research, offering advantages such as miniaturization, weak light detection, high photosensitivity, and low noise levels. However, current type-III 2D heterojunction photodetectors often suffer from low self-driven responsivity and medium Ilight/Idark ratios. In this work, a novel device architecture that addresses these challenges is constructed by incorporating Cu-doped InP/ZnSeS/ZnS core-shell quantum dots (QDs) onto a type-III SnSe2/MoTe2 2D heterojunction. The strategically engineered energy band structure of the Cu-doped QDs facilitates carrier transport with SnSe2/MoTe2 to form back-to-back type-II and type-III band alignments. As a result, under 532 nm illumination, the hybrid device exhibits remarkable visible light self-driven performance metrics with the help of the photogating effect: an ultra-low dark current of 23 fA, with responsivity and external quantum efficiency enhanced to 459 mA W-1 and 109%, respectively, surpassing theoretical values by fourfold compared to those of pure SnSe2/MoTe2, a low noise equivalent power (NEP) of 0.87 × 10-2 pW Hz-1/2, a realistic specific detectivity of 1.45 × 1011 Jones, a large Ilight/Idark ratio of 106 and a swift response time of 1.16 ms/1.14 ms with stable operation. These results demonstrate that energy band engineering of Cu-doped QDs can significantly enhance the performance of 2D type-III heterojunctions in the visible range, laying a foundation for future gate-tunable optoelectronic devices.

Interactions of Terahertz Photons with Phonons of Two-Dimensional van der Waals MoS2/WSe2/MoS2 Heterostructures and Thermal Responses

The interaction between terahertz (THz) photons and phonons of materials is crucial for the development of THz photonics. In this work, typical two-dimensional (2D) van der Waals (vdW) transition metal chalcogenide (TMD) layers and heterostructures are used in THz time-domain spectroscopy (TDS) measurements, low-wavenumber Raman spectroscopy measurements, calculation of 2D materials' phonon spectra, and theoretical analysis of thermal responses. The TDS results reveal strong absorption of THz photons in the frequency range of 2.5-10 THz. The low-wavenumber Raman spectra show the phonon vibration characteristics and are used to establish phonon energy bands. We also set up a computational simulation model for thermal responses. The temperature increases and distributions in the individual layers and their heterostructures are calculated, showing that THz photon absorption results in significant increases in temperature and differences in the heterostructures. These give rise to interesting photothermal effects, including the Seebeck effect, resulting in voltages across the heterostructures. These findings provide valuable guidance for the potential optoelectronic application of the 2D vdW heterostructures.

Low-Temperature Growth of Centimeter-Sized 2D PdSe2 by Self-Limiting Liquid-Phase Edge Epitaxy

Two-dimensional (2D) PdSe2 atomic crystals hold great potential for optoelectronic applications due to their bipolar electrical characteristics, tunable bandgap, high electron mobility, and exceptional air stability. Nevertheless, the scalable synthesis of large-area, high-quality 2D PdSe2 crystals using chemical vapor deposition (CVD) remains a significant challenge. Here, we present a self-limiting liquid-phase edge-epitaxy (SLE) low-temperature growth method to achieve high-quality, centimeter-sized PdSe2 films with single-crystal domain areas exceeding 30 μm. The SLE growth mechanism, clarified by theoretical calculations and time-of-flight secondary ion mass spectrometry (ToF-SIMS), reveals that hydrogen ions on the precursor surface inhibit vertical growth while promoting lateral growth. The as-grown PdSe2 few-layer exhibits a surface roughness of 1.20 nm and an average conductivity of 1.67 × 10-6 S/m, demonstrating their smoothness and uniformity. Temperature-dependent electrical measurements and transfer characteristic curves confirm the orthorhombic PdSe2's bipolar semiconductor behavior. The photodetector based on few-layer PdSe2 films exhibit excellent optoelectronic performance in the 405-1650 nm wavelength range, achieving a responsivity of 6262.37 A W-1, a detectivity of ∼1012 Jones under 1064 nm illumination, and a fast response time of 37.1 μs, making them highly suitable for broadband photodetection applications. This work provides valuable insights into the scalable synthesis of PdSe2 few-layers and establishes a foundation for the development of PdSe2-based integrated functional devices.

Direct Syntheses of 2D Noble Transition Metal Dichalcogenides Toward Electronics, Optoelectronics, and Electrocatalysis-Related Applications

2D noble transition metal dichalcogenides (nTMDCs, PdX2 and PtX2, where X═S, Se, Te) have emerged as a new class of 2D materials, owing to their unique puckered pentagonal structure in 2D PdS2 and PdSe2, largely tunable band structures or band gaps with decreasing the layer thickness at the 2D limit, strong interlayer interactions, superior optoelectronic properties, high edge catalytic properties, etc. Directly synthesizing 2D nTMDCs domains or thin films with large-area uniformity, tunable thickness, and high crystalline quality is the premise for exploring these salient properties and developing a wide range of applications. Hereby, this review summarizes recent progress in the direct syntheses and characterizations of 2D nTMDCs, mainly focusing on the thermally assisted conversion (TAC) and chemical vapor deposition (CVD) methods, by using various metal and chalcogen-contained precursors. Meanwhile, the applications of directly synthesized 2D nTMDCs in various fields, such as high-performance field effect transistors (FETs), broadband photodetectors, superior catalysts in hydrogen evolution reactions, and ultra-sensitive piezo resistance sensors, are also discussed. Finally, challenges and prospects regarding the direct syntheses of high-quality 2D nTMDCs and their applications in next-generation electronic and optoelectronic devices, as well as novel catalysts beyond noble metals are overviewed.

PdSe2/NbSe2 Heterojunction Photodetector with Broadband Detection and Polarization Sensitivity

Polarized photodetectors based on anisotropic two-dimensional (2D) materials display great potential applications in communications and optoelectronics. However, the existence of high dark current, low anisotropic ratio, and response speed limits their development. In this paper, a broadband polarization angle-dependent photodetector based on the PdSe2/NbSe2 van der Waals (vdW) heterojunction has been constructed. Characterization results show that the PdSe2/NbSe2 heterojunction photodetector can suppress the dark current effectively (NbSe2 ∼4 orders of magnitude and PdSe2 ∼1 order of magnitude compared with individual material). Meanwhile, the device exhibits a broadband detection capability ranging from 405 to 980 nm. The device shows a superior responsivity of 27 mA/W, a considerable detectivity of 9.8 × 107 Jones, a large external quantum efficiency of 528%, and an ultrafast rise/decay time of 1.6/1.9 μs at 1 V bias under 638 nm laser wavelength. The photodetector also achieves a high polarization-sensitive anisotropic ratio of ∼2.62 under 638 nm laser irradiation. In addition, the heterojunction device shows outstanding polarization imaging capabilities, which can be used as the image sensor. This work proposed a PdSe2/NbSe2 vdW heterojunction device with low dark current, broadband polarized detection, and polarized visual imaging, which will promote the development and practicality of polarization-sensitive photodetectors.

Superior P-Type Switching in InSe Nanosheets for Complementary Multifunctional Systems

van der Waals (vdW) indium selenide (InSe) is receiving attention for its exceptional electron mobility and moderate band gap, enabling various applications. However, the intrinsic n-type behavior of InSe has restricted its use predominantly to n-type devices, constraining its application in complementary integrated microsystems. Here, we show superior ambipolar InSe transistors with vdW bottom contacts, achieving impressive p-type on/off current ratios greater than 109 and Schottky barrier heights approaching the ideal Schottky-Mott limit. By introducing a partially gate-coupled architecture, we also demonstrate an ambipolar-to-unipolar transition and reconfigurable complementary multifunctionality, including n-type and p-type transistors as well as negative and positive rectifiers and breakdown diodes. The rectification polarity and ratio are gate-tunable from 3.5 × 107 down to ∼10 without complex heterostructures, chemical doping, and multigate layouts. The negative and positive breakdowns are reversible, with both the breakdown voltage and switching ratio, which can exceed 108, also being electrically tunable.

An Ultrasensitive Bi2O2Se/In2S3 Photodetector with Low Detection Limit and Fast Response toward High-Precision Unmanned Driving

The machine vision utilized in unmanned driving systems must possess the ability to accurately perceive scenes under low-light illumination conditions. To achieve this, photodetectors with low detection limits and a fast response are essential. Current systems rely on avalanche diodes or lidars, which come with the drawbacks of increased energy consumption and complexity. Here, we present an ultrasensitive photodetector based on a two-dimensional (2D) Bi2O2Se/In2S3 heterostructure, incorporating a homotype unilateral depletion band design. This innovative architecture effectively modulates the transport of both free and photoexcited carriers, suppressing the dark current and facilitating the rapid and efficient separation of photocarriers. Owing to these features, this device exhibits a responsivity of 144 A/W, a specific detectivity of 1.2 × 1014 Jones, and a light on/off ratio of 1.1 × 105. These metrics rank among the top values reported for state-of-the-art 2D devices. Moreover, this device also demonstrates a fast response time of 170/296 μs and a low noise equivalent power of 0.57 fW/Hz1/2, attributes that endow it with ultraweak light imaging capabilities. Furthermore, we have successfully integrated this device into an unmanned driving system, providing a perspective on the design and fabrication of future optoelectronic devices.

Dual-Electrically Configurable MoTe2/In2S3 Phototransistor toward Multifunctional Applications

Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore's Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3 heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013 Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105 and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Composition Modulation-Mediated Band Alignment Engineering from Type I to Type III in 2D vdW Heterostructures

Band alignment engineering is crucial for facilitating charge separation and transfer in optoelectronic devices, which ultimately dictates the behavior of Van der Waals heterostructures (vdWH)-based photodetectors and light emitting diode (LEDs). However, the impact of the band offset in vdWHs on important figures of merit in optoelectronic devices has not yet been systematically analyzed. Herein, the regulation of band alignment in WSe2/Bi2Te3- xSex vdWHs (0 ≤ x ≤ 3) is demonstrated through the implementation of chemical vapor deposition (CVD). A combination of experimental and theoretical results proved that the synthesized vdWHs can be gradually tuned from Type I (WSe2/Bi2Te3) to Type III (WSe2/Bi2Se3). As the band alignment changes from Type I to Type III, a remarkable responsivity of 58.12 A W-1 and detectivity of 2.91×1012 Jones (in Type I) decrease in the vdWHs-based photodetector, and the ultrafast photoresponse time is 3.2 µs (in Type III). Additionally, Type III vdWH-based LEDs exhibit the highest luminance and electroluminescence (EL) external quantum efficiencies (EQE) among p-n diodes based on Transition Metal Dichalcogenides (TMDs) at room temperature, which is attributed to band alignment-induced distinct interfacial charge injection. This work serves as a valuable reference for the application and expansion of fundamental band alignment principles in the design and fabrication of future optoelectronic devices.

High-Performance Photoinduced Tunneling Self-Driven Photodetector for Polarized Imaging and Polarization-Coded Optical Communication based on Broken-Gap ReSe2/SnSe2 van der Waals Heterojunction

Novel 2D materials with low-symmetry structures exhibit great potential applications in developing monolithic polarization-sensitive photodetectors with small volume. However, owing to the fact that at least half of them presented a small anisotropic factor of ≈2, comprehensive performance of present polarization-sensitive photodetectors based on 2D materials is still lower than the practical application requirements. Herein, a self-driven photodetector with high polarization sensitivity using a broken-gap ReSe2/SnSe2 van der Waals heterojunction (vdWH) is demonstrated. Anisotropic ratio of the photocurrent (Imax/Imin) could reach 12.26 (635 nm, 179 mW cm-2). Furthermore, after a facile combination of the ReSe2/SnSe2 device with multilayer graphene (MLG), Imax/Imin of the MLG/ReSe2/SnSe2 can be further increased up to13.27, which is 4 times more than that of pristine ReSe2 photodetector (3.1) and other 2D material photodetectors even at a bias voltage. Additionally, benefitting from the synergistic effect of unilateral depletion and photoinduced tunneling mechanism, the MLG/ReSe2/SnSe2 device exhibits a fast response speed (752/928 µs) and an ultrahigh light on/off ratio (105). More importantly, MLG/ReSe2/SnSe2 device exhibits excellent potential applications in polarized imaging and polarization-coded optical communication with quaternary logic state without any power supply. This work provides a novel feasible avenue for constructing next-generation smart polarization-sensitive photodetector with low energy consumption.

Defect Engineering of MoTe2 via Thiol Treatment for Type III van der Waals Heterojunction Phototransistor

Molybdenum ditelluride (MoTe2) nanosheets have displayed intriguing physicochemical properties and opto-electric characteristics as a result of their tunable and small band gap (Eg ∼ 1 eV), facilitating concurrent electron and hole transport. Despite the numerous efforts devoted to the development of p-type MoTe2 field-effect transistors (FETs), the presence of tellurium (Te) point vacancies has caused serious reliability issues. Here, we overcome this major limitation by treating the MoTe2 surface with thiolated molecules to heal Te vacancies. Comprehensive materials and electrical characterizations provided unambiguous evidence for the efficient chemisorption of butanethiol. Our thiol-treated MoTe2 FET exhibited a 10-fold increase in hole current and a positive threshold voltage shift of 25 V, indicative of efficient hole carrier doping. We demonstrated that our powerful molecular engineering strategy can be extended to the controlled formation of van der Waals heterostructures by developing an n-SnS2/thiol-MoTe2 junction FET (thiol-JFET). Notably, the thiol-JFET exhibited a significant negative photoresponse with a responsivity of 50 A W-1 and a fast response time of 80 ms based on band-to-band tunneling. More interestingly, the thiol-JFET displayed a gate tunable trimodal photodetection comprising two photoactive modes (positive and negative photoresponse) and one photoinactive mode. These findings underscore the potential of molecular engineering approaches in enhancing the performance and functionality of MoTe2-based nanodevices as key components in advanced 2D-based optoelectronics.

Two-Dimensional GeS/SnSe2 Tunneling Photodiode with Bidirectional Photoresponse and High Polarization Sensitivity

A two-dimensional (2D) broken-gap (type-III) p-n heterojunction has a unique charge transport mechanism because of nonoverlapping energy bands. In light of this, type-III band alignment can be used in tunneling field-effect transistors (TFETs) and Esaki diodes with tunable operation and low consumption by highlighting the advantages of tunneling mechanisms. In recent years, 2D tunneling photodiodes have gradually attracted attention for novel optoelectronic performance with a combination of strong light-matter interaction and tunable band alignment. However, an in-depth understanding of the tunneling mechanisms should be further investigated, especially for developing electronic and optoelectronic applications. Here, we report a type-III tunneling photodiode based on a 2D multilayered p-GeS/n+-SnSe2 heterostructure, which is first fabricated by the mechanical exfoliation and dry transfer method. Through the Simmons approximation, its various tunneling transport mechanisms dependent on bias and light are demonstrated as the origin of excellent bidirectional photoresponse performance. Moreover, compared to the traditional p-n photodiode, the device enables bidirectional photoresponse capability, including maximum responsivity values of 43 and 8.7 A/W at Vds = 1 and -1 V, respectively, with distinctive photoactive regions from the scanning photocurrent mapping. Noticeably, benefiting from the in-plane anisotropic structure of GeS, the device exhibits an enhanced photocurrent anisotropic ratio of 9, driven by the broader depletion region at Vds = -3 V under 635 nm irradiation. Above all, the results suggest that our designed architecture can be potentially applied to CMOS imaging sensors and polarization-sensitive photodetectors.

Electrically Tunable Multiple-Effects Synergistic and Boosted Photoelectric Performance in Te/WSe2 Mixed-Dimensional Heterojunction Phototransistors

Mix-dimensional heterojunctions (MDHJs) photodetectors (PDs) built from bulk and 2D materials are the research focus to develop hetero-integrated and multifunctional optoelectronic sensor systems. However, it is still an open issue for achieving multiple effects synergistic characteristics to boost sensitivity and enrich the prospect in artificial bionic systems. Herein, electrically tunable Te/WSe2 MDHJs phototransistors are constructed, and an ultralow dark current below 0.1 pA and a large on/off rectification ratio of 106 is achieved. Photoconductive, photovoltaic, and photo-thermoelectric conversions are simultaneously demonstrated by tuning the gate and bias. By these synergistic effects, responsivity and detectivity respectively reach 13.9 A W-1 and 1.37 × 1012 Jones with 400 times increment. The Te/WSe2 MDHJs PDs can function as artificial bionic visual systems due to the comparable response time to those of the human visual system and the presence of transient positive and negative response signals. This work offers an available strategy for intelligent optoelectronic devices with hetero-integration and multifunctions.

Nanoskiving of van der Waals Materials toward Edge/Basal Plane Contact Heterojunctions for High-Performance Photodetection

The unique features of edges in van der Waals materials may lead to edge-basal plane contacts that could provide new opportunities for electronic and optoelectronic devices. However, few studies have addressed edge/basal plane contact heterojunctions owing to the formidable challenges in integrating edges with the basal plane to form a heterojunction. Here, taking the example of black phosphorus (BP)/ReS2, a heterojunction with contact between the edge and the basal plane was successfully achieved by the introduction of a nanoskiving technique to fabricate BP edges with controlled orientation, followed by the dry transfer of a ReS2 flake. The deformation of BP during the nanoskiving process was clearly revealed, where interlayer slipping in the BP determined the formation of the edges. The edge/basal plane contact heterojunctions based on BP/ReS2 exhibited a reverse-rectifying behavior upon contact, and a high rectifying current was attributed to direct tunneling and Fowler-Nordheim tunneling in low and high bias regimes, respectively. As a photodetector, the heterojunction diode demonstrated an impressive responsivity of 65 A/W, a rapid response time (<10 ms), and polarization-sensitive detection under 532 nm illumination without gate biasing.

A novel type-II-II heterojunction for photocatalytic degradation of LEV based on the built-in electric field: carrier transfer mechanism and DFT calculation

Heterojunctions play a crucial role in improving the absorption of visible light and performance of photocatalysts for organic contaminants degradation in water. In this work, a novel type-II-II Ag2CO3/Bi2WO6 (AB) heterojunction was synthesized by hydrothermal reaction and in situ-precipitation methods. The mechanisms of charge transfer and carrier separation at the interface of heterojunctions and the influence on the photocatalytic activity were investigated. The degradation of levofloxacin (LEV) under visible light irradiation was employed to evaluate the photocatalytic performance of AB. The results showed that 85.4% LEV was degraded by AB, which was 1.38 and 1.39 times higher than that of Bi2WO6 and Ag2CO3, respectively. The work functions of the different crystal planes in the AB heterojunction, which was calculated by density functional theory, are a significant difference. The Fermi energy (Ef) of Ag2CO3 (- 6.005 eV) is lower than Bi2WO6 (- 3.659 eV), but the conduction band (CB) is higher. Therefore, using AB heterojunctions as an example, the research explored the mechanism of type-II-II which CB and Ef of one semiconductor cannot simultaneously surpass those of another material, based on the built-in electric field theory. Through this analysis, a deeper understanding of type-II heterojunctions was achieved, and providing valuable insights into the behavior of this specific heterojunction system.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

Ideal Photodetector Based on WS2/CuInP2S6 Heterostructure by Combining Band Engineering and Ferroelectric Modulation

Two-dimensional van der Waals (2D vdW) heterostructure photodetectors have garnered significant attention for their potential applications in next-generation optoelectronic systems. However, current 2D vdW photodetectors inevitably encounter compromises between responsivity, detectivity, and response time due to the absence of multilevel regulation for free and photoexcited carriers, thereby restricting their widespread applications. To address this challenge, we propose an efficient 2D WS2/CuInP2S6 vdW heterostructure photodetector by combining band engineering and ferroelectric modulation. In this device, the asymmetric conduction and valence band offsets effectively block the majority carriers (free electrons), while photoexcited holes are efficiently tunneled and rapidly collected by the bottom electrode. Additionally, the ferroelectric CuInP2S6 layer generates polarization states that reconfigure the built-in electric field, reducing dark current and facilitating the separation of photocarriers. Moreover, photoelectrons are trapped during long-distance lateral transport, resulting in a high photoconductivity gain. Consequently, the device achieves an impressive responsivity of 88 A W-1, an outstanding specific detectivity of 3.4 × 1013 Jones, and a fast response time of 37.6/371.3 μs. Moreover, the capability of high-resolution imaging under various wavelengths and fast optical communication has been successfully demonstrated using this device, highlighting its promising application prospects in future optoelectronic systems.

Progress of charge carrier dynamics and regulation strategies in 2D CxNy-based heterojunctions

Two-dimensional carbon nitrides (CxNy) have gained significant attention in various fields including hydrogen energy development, environmental remediation, optoelectronic devices, and energy storage owing to their extensive surface area, abundant raw materials, high chemical stability, and distinctive physical and chemical characteristics. One effective approach to address the challenges of limited visible light utilization and elevated carrier recombination rates is to establish heterojunctions for CxNy-based single materials (e.g. C2N3, g-C3N4, C3N4, C4N3, C2N, and C3N). The carrier generation, migration, and recombination of heterojunctions with different band alignments have been analyzed starting from the application of CxNy with metal oxides, transition metal sulfides (selenides), conductive carbon, and Cx'Ny' heterojunctions. Additionally, we have explored diverse strategies to enhance heterojunction performance from the perspective of carrier dynamics. In conclusion, we present some overarching observations and insights into the challenges and opportunities associated with the development of advanced CxNy-based heterojunctions.

Asymmetric Schottky Barrier-Generated MoS2/WTe2 FET Biosensor Based on a Rectified Signal

Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a "rectified signal" in the output characteristic curve, instead of the "absolute value signal" in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS2/WTe2 FET biosensor achieved a 105 rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM-100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome.

SnS2/MoS2 van der Waals Heterostructure Photodetector with Ultrahigh Responsivity Realized by a Photogating Effect

Photoresponsivity is a fundamental parameter used to quantify the ability of photoelectric conversion of a photodetector device. High-responsivity photodetectors are essential for numerous optoelectronic applications. Due to the strong light-matter interactions and the high carrier mobility, two-dimensional (2D) materials are promising candidates for the next-generation photodetectors. However, poor light absorption, lack of photoconductive gain, and the interfacial recombination lead to the relatively low responsivity of 2D photodetectors. The photogating effect, which extends the lifetime of photoexcited carriers, provides a simple approach to enhance responsivity in photodetector devices. Here, the O2 plasma treatment introduced surface traps on the SnS2 surface, leading to a gate-tunable photogating effect in SnS2/MoS2 heterojunctions. The heterojunction device exhibits an ultrahigh responsibility of up to 28 A/W. Moreover, the photodetector possesses a wide spectral photoresponse spanning from 300 to 1100 nm and a high specific detectivity (D*) of 4 × 1011 Jones under a 532 nm laser at VDS = 1 V. These results demonstrate that O2 plasma treatment is an efficient and simple avenue to achieve photogating effects, which can be employed to enhance the performance of van der Waals heterostructure photodetector devices and make them suitable for future integration into advanced electronic and optoelectronic systems.

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics

Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.

A high-performance long-wave infrared photodetector based on a WSe2/PdSe2 broken-gap heterodiode

Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.

A Droplet Method for Synthesis of Multiclass Ultrathin Metal Halides

2D metal halides have attracted increasing research attention in recent years; however, it is still challenging to synthesize them via liquid-phase methods. Here it is demonstrated that a droplet method is simple and efficient for the synthesis of multiclass 2D metal halides, including trivalent (BiI3 , SbI3 ), divalent (SnI2 , GeI2 ), and monovalent (CuI) ones. In particular, 2D SbI3 is first experimentally achieved, of which the thinnest thickness is ≈6 nm. The nucleation and growth of these metal halide nanosheets are mainly determined by the supersaturation of precursor solutions that are dynamically varying during the solution evaporation. After solution drying, the nanosheets can fall on the surface of many different substrates, which further enables the feasible fabrication of related heterostructures and devices. With SbI3 /WSe2 being a good demonstration, the photoluminescence intensity and photo responsivity of WSe2 is obviously enhanced after interfacing with SbI3 . The work opens a new pathway for 2D metal halides toward widespread investigation and applications.

Anisotropic charge transfer and gate tuning for p-SnS/n-MoS2 vertical van der Waals diodes

2D-material-based van der Waals heterostructures (vdWhs) have shown great potential in next-generation multi-functional microelectronic devices. Thanks to their sharp interface and ultrathin thickness, 2D p-n junctions with high rectification properties have been established by combining p-type monochalcogenides with n-type transition metal dichalcogenides. However, the anisotropic rectification together with the charge transfer and gate effect has not been clarified. Herein, the electrical anisotropy of p-SnS/n-MoS2 diodes was studied. Optimum ideality factors within 1.08-1.18 have been achieved for the diode with 6.6 nm thick SnS on monolayer MoS2, and a high rectification ratio of 3.1 × 104 with strong in-plane anisotropy is observed along the zigzag direction of SnS. A strong gate effect on the anisotropic series resistance has been verified and an effective tuning over the transport length of the SnS channel can be established through adjustment of the current orientation and gate voltage. A thickness-dependent minority carrier transport mechanism has also been demonstrated for the reverse drain current, and Fowler-Nordheim tunneling and direct tunneling are proposed for the increase of the reverse current of the thicker and thinner diodes, respectively. This work will provide another strategy for high-performance diodes based on vdWhs via the control of the current orientation and the gate effect.

Electrical field and biaxial strain tunable electronic properties of the PtSe2/Hf2CO2 heterostructure

The structure and electronic properties of two-dimensional vertical van der Waals PtSe2/Hf2CO2 heterostructure have been investigated based on first-principles calculations. The results show that the PtSe2 and Hf2CO2 monolayers form a type-I heterostructure with both the conduction band minimum (CBM) and valence band maximum (VBM) located at the Hf2CO2 layer. The electronic properties of PtSe2/Hf2CO2 heterostructure can be effectively adjusted by applying external electric field or biaxial strain. The transition in band alignment from type-I to type-II can be manipulated by controlling the strength and direction of the electric field. Additionally, the transition from type-I to type-II have also taken place under the strains, and the band gap of the PtSe2/Hf2CO2 heterostructure decreases with increasing the compressive or tensible strain. Under a strong strain of -8%, the PtSe2/Hf2CO2 heterostructure can transform from semiconductor to metal. These findings provide a promising method to tune the electronic properties of PtSe2/Hf2CO2 heterostructure and design a new vdW heterostructure in the applications for electronic and optoelectronic devices.

Modulating the Function of GeAs/ReS2 van der Waals Heterojunction with its Potential Application for Short-Wave Infrared and Polarization-Sensitive Photodetection

Van der Waals heterojunction (vdWs) of 2D materials with integrated or extended superior characteristics, opening up new opportunities in functional electronic and optoelectric device applications. Exploring methods to achieve multifunctional vdWs heterojunction devices is one of the most promising prospects in this area. Herein, a diverse function of forward rectifying diode, Zener tunneling diode, and backward rectifying diodes are realized in GeAs/ReS2 heterojunction by modulating the doping level of GeAs. The tunneling diode presents an interesting trend forward negative differential resistance (NDR) behavior which may facilitate the application of multi-value logic. More importantly, the GeAs/ReS2 forward rectifying diode exhibits highly sensitive photodetection in the wide-spectrum range up to 1550 nm corresponding to a short-wave infrared (SWIR) region. In addition, as two strong anisotropic 2D materials of GeAs and ReS2 , the heterojunction exhibits strong polarization-sensitive photodetection behavior with a dichroic photocurrent ratio of 1.7. This work provides an effective strategy to achieve multifunctional 2D vdW heterojunction devices and develops more possibilities to broaden their functionalities and applications.

Integration of Self-Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices

With the rapid development of two-dimensional semiconductor technology, the inevitable chemical disorder at a typical metal-semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect-free van der Waals contacts have been achieved by utilizing topological Bi₂ Se₃ as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe₂ channel realizes a high responsivity of 20.5 A W^-1 , an excellent detectivity of 2.18 × 10¹²  Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high-resolution visible-light imaging capability of the WSe₂ device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS₂ and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high-performance electronics and optoelectronics.

A two-dimensional Te/ReS2 van der Waals heterostructure photodetector with high photoresponsivity and fast photoresponse

Two-dimensional (2D) semiconductors are the building blocks for high-performance optoelectronic devices. However, the performance of photoconductive photodetectors based on 2D semiconductors is hampered by low photoresponsivity and large dark current. Herein, a van der Waals heterostructure (vdWH) composed of rhenium disulfide (ReS₂) and tellurium (Te) is fabricated. The Te/ReS₂ vdWH photodetector exhibits a sensitive and broadband photoresponse and has high photoresponse on/off ratios under ultraviolet and visible light illumination, especially over 10² in visible light. The Te/ReS₂ vdWH photodetector achieves the responsivity of 7.9 A W^-1 at 365 nm, 3.02 A W^-1 at 450 nm, 2.37 A W^-1 at 532 nm, and 2.45 A W^-1 at 660 nm. In addition, the device achieves a high specific detectivity of 10¹¹ Jones and a fast photoresponse speed of 11.9 μs. Such high responsivity could be attributed to the efficient absorption of phonons by the Te/ReS₂ vdWH and the high-quality heterostructure interfaces with a small amount of trap states. The highly crystalline structure of Te/ReS₂ with a low density of defects reduces the grain boundary scattering, leading to the rapid diffusion of charge carriers. Moreover, the Te/ReS₂ vdWH device exhibits a photovoltaic effect and can be employed as a self-powered photodetector (SPPD), which is sensitive to visible light of 450 nm, 532 nm, and 660 nm. Our findings demonstrate that the Te/ReS₂ vdWH photodetector is an ideal building block for the next-generation electronic and optoelectronic devices in practical applications.

Type-II Bi2O2Se/MoTe2 van der Waals Heterostructure Photodetectors with High Gate-Modulation Photovoltaic Performance

In recent years, two-dimensional (2D) nonlayered Bi₂O₂Se-based electronics and optoelectronics have drawn enormous attention owing to their high electron mobility, facile synthetic process, stability to the atmosphere, and moderate narrow band gaps. However, 2D Bi₂O₂Se-based photodetectors typically present large dark current, relatively slow response speed, and persistent photoconductivity effect, limiting further improvement in fast-response imaging sensors and low-consumption broadband detection. Herein, a Bi₂O₂Se/2H-MoTe₂ van der Waals (vdWs) heterostructure obtained from the chemical vapor deposition (CVD) approach and vertical stacking is reported. The proposed type-II staggered band alignment desirable for suppression of dark current and separation of photoinduced carriers is confirmed by density functional theory (DFT) calculations, accompanied by strong interlayer coupling and efficient built-in potential at the junction. Consequently, a stable visible (405 nm) to near-infrared (1310 nm) response capability, a self-driven prominent responsivity (R) of 1.24 A·W^-1, and a high specific detectivity (D*) of 3.73 × 10¹¹ Jones under 405 nm are achieved. In particular, R, D*, fill factor, and photoelectrical conversion efficiency (PCE) can be enhanced to 4.96 A·W^-1, 3.84 × 10¹² Jones, 0.52, and 7.21% at V_g = -60 V through a large band offset originated from the n⁺-p junction. It is suggested that the present vdWs heterostructure is a promising candidate for logical integrated circuits, image sensors, and low-power consumption detection.

High-Performance and Polarization-Sensitive Imaging Photodetector Based on WS2 /Te Tunneling Heterostructure

Next-generation imaging systems require photodetectors with high sensitivity, polarization sensitivity, miniaturization, and integration. By virtue of their intriguing attributes, emerging 2D materials offer innovative avenues to meet these requirements. However, the current performance of 2D photodetectors is still below the requirements for practical application owing to the severe interfacial recombination, the lack of photoconductive gain, and insufficient photocarrier collection. Here, a tunneling dominant imaging photodetector based on WS₂ /Te heterostructure is reported. This device demonstrates competitive performance, including a remarkable responsivity of 402 A W^-1 , an outstanding detectivity of 9.28 × 10¹³ Jones, a fast rise/decay time of 1.7/3.2 ms, and a high photocurrent anisotropic ratio of 2.5. These outstanding performances can be attributed to the type-I band alignment with carrier transmission barriers and photoinduced tunneling mechanism, allowing reduced interfacial trapping effect, effective photoconductive gains, and anisotropic collection of photocarriers. Significantly, the constructed photodetector is successfully integrated into a polarized light imaging system and an ultra-weak light imaging system to illustrate the imaging capability. These results suggest the promising application prospect of the device in future imaging systems.

Research Process on Photodetectors based on Group-10 Transition Metal Dichalcogenides

Rapidly evolving group-10 transition metal dichalcogenides (TMDCs) offer remarkable electronic, optical, and mechanical properties, making them promising candidates for advanced optoelectronic applications. Compared to most TMDCs semiconductors, group-10-TMDCs possess unique structures, narrow bandgap, and influential physical properties that motivate the development of broadband photodetectors, specifically infrared photodetectors. This review presents the latest developments in the fabrication of broadband photodetectors based on conventional 2D TMDCs. It mainly focuses on the recent developments in group-10 TMDCs from the perspective of the lattice structure and synthesis techniques. Recent progress in group-10 TMDCs and their heterostructures with different dimensionality of materials-based broadband photodetectors is provided. Moreover, this review accounts for the latest applications of group-10 TMDCs in the fields of nanoelectronics and optoelectronics. Finally, conclusions and outlooks are summarized to provide perspectives for next-generation broadband photodetectors based on group-10 TMDCs.

Enhancing UV photodetection performance of an individual ZnO microwire p-n homojunction via interfacial engineering

As a typical broad bandgap semiconductor, ZnO has received considerable attention for developing optoelectronic devices in ultraviolet wavelengths, but suffers from a lack of high-quality single-crystalline p-type ZnO. Herein, we report the realization of a homojunction ultraviolet photodetector, which involves a p-type Sb-doped ZnO microwire (ZnO:Sb MW) and n-type ZnO layer. The p-type conductivity of the as-synthesized ZnO:Sb MWs was evidenced using an individual wire field-effect transistor. Due to its good rectifying ability and excellent photovoltaic effect, the constructed p-ZnO:Sb MW/n-ZnO homojunction is able to work as an ultraviolet photodetector in self-biased and reversely biased manners. By appropriately engineering the band alignment of the p-ZnO:Sb/n-ZnO homojunction via a MgO interface modification layer, the optimized photodetector exhibits performance-enhanced ultraviolet detection capabilities, such as the light on/off ratio reaching up to 1.6 × 10⁸, responsivity of over 267 mA W^-1 and specific detectivity of approximately 1.2 × 10¹⁴ Jones upon 365 nm light illumination at 0 V. The detector also produces faster response with rise/recovery times of 102 μs/3.6 ms. This study not only employed a novel method to synthesize genuine p-type ZnO with excellent stability and reproducibility, but also opened up substantial opportunities for developing high-performance ZnO homojunction optoelectronic devices.

Integration of photovoltaic and photogating effects in a WSe2/WS2/p-Si dual junction photodetector featuring high-sensitivity and fast-response

Two-dimensional (2D) material-based van der Waals (vdW) heterostructures with exotic semiconducting properties have shown tremendous potential in next-generation photovoltaic photodetectors. Nevertheless, these vdW heterostructure devices inevitably suffer from a compromise between high sensitivity and fast response. Herein, an ingenious photovoltaic photodetector based on a WSe₂/WS₂/p-Si dual-vdW heterojunction is demonstrated. First-principles calculations and energy band profiles consolidate that the photogating effect originating from the bottom vdW heterojunction not only strengthens the photovoltaic effect of the top vdW heterojunction, but also suppresses the recombination of photogenerated carriers. As a consequence, the separation of photogenerated carriers is facilitated and their lifetimes are extended, resulting in higher photoconductive gain. Coupled with these synergistic effects, this WSe₂/WS₂/p-Si device exhibits both high sensitivity (responsivity of 340 mA W^-1, a light on/off ratio greater than 2500, and a detectivity of 3.34 × 10¹¹ Jones) and fast response time (rise/decay time of 657/671 μs) under 405 nm light illumination in self-powered mode. Finally, high-resolution visible-light and near-infrared imaging capabilities are demonstrated by adopting this dual-heterojunction device as a single pixel, indicating its great application prospects in future optoelectronic systems.

Polarity-Reversible Te/WSe2 van der Waals Heterodiode for a Logic Rectifier and Polarized Short-Wave Infrared Photodetector

As a p-type elemental material with high carrier mobility, superior ambient stability, and anisotropic crystal structure, emerging two-dimensional (2D) tellurium (Te) has been considered a successor to black phosphorus for developing infrared-related optoelectronics. Nevertheless, the lack of a scalable thickness engineering strategy remains an obstacle to unleashing its full potential. Te-based electronics with logic functions are also less explored. Herein, we propose a novel wet-chemical thinning method for 2D Te, with the merits of scalability and site-specific thickness patterning capability. A polarity-switchable van der Waals (vdW) heterodiode with a high rectification ratio of 2.4 × 10³ is realized on the basis of Te/WSe₂. The electronic application of this unique characteristic is demonstrated by fabricating a logic half-wave rectifier, in which the rectifying states are switchable via electrostatic gating control. Besides, the narrow band gap of Te endows the device with a broad spectral response from visible to short-wave infrared. The room-temperature responsivity reaches 5.2 A W^-1 at the telecom wavelength of 1.55 μm, with an external quantum efficiency of 420% and detectivity of 6.8 × 10⁹ Jones. In particular, owing to the intrinsic in-plane anisotropy of Te, the device exhibits a favorable photocurrent anisotropic ratio of ∼3. Our study demonstrates the enormous potential of Te for novel electronics, promoting the development of elemental 2D materials.

Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation of a-IZTO is the costly vacuum manufacturing technology, and its commercial production is also restricted by the complex raw material preparation process. In this article, we report a liquid metal-based van der Waals (vdW) exfoliation technique by which a-IZTO films with several nanometres thickness are fabricated. The a-IZTO films fabricated in ambient air have a size on the centimeter scale and an optical transmittance of 99.64%; they are also large-area flexible oxide films. In order to illustrate the capabilities of this technology, we fabricated thin film transistors (TFTs) and photodetectors based on a-IZTO films. An a-IZTO thin film transistor (TFT) has an on/off ratio of 10⁶. When the V_ds is 5 V, the responsivity, detectivity and external quantum efficiency of an a-IZTO photodetector are 7.57 × 10⁴ A W^-1, 4.00 × 10¹⁵ Jones and 3.68 × 10⁵%, respectively, exhibiting one of the top performances in this field.

High-Speed Transition-Metal Dichalcogenides Based Schottky Photodiodes for Visible and Infrared Light Communication

Due to their atomically ultrathin thickness, the development of high-performance transition-metal dichalcogenides (TMDCs) based photodetectors demands device designs distinct from architectures adopted in conventional bulk semiconductor devices. Here, we demonstrate a field-induced Schottky barrier photodiode with three different TMDC materials, WSe₂, MoTe₂, and WS₂. Owing to the high gate efficiency of a high-κ dielectric film, the Schottky barrier at metal contacts is effectively modulated by external bias, giving rise to a strong diode-like rectifying characteristic with high current on/off ratio. The WSe₂ photodiode shows a linear dynamic range of 112 dB, a responsivity of 0.17 A/W, and response time of 8 ns. When this fast WSe₂ device is employed for visible light communication data linking, a maximum real-time data transmission rate of 110 Mbps is achieved. Meanwhile, infrared light communication was also realized with a maximum data rate of 30 Mbps using a field-induced MoTe₂ Schottky barrier photodiode as a light sensor. This work provides a general CMOS-compatible and controllable fabrication strategy for TMDC-based photodetectors.

Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity

Recent advances in two-dimensional (2D) materials play an essential role in boosting modern electronics and optoelectronics. Thus far, transition metal dichalcogenides (TMDs) as emerging members of 2D materials, and the van der Waals heterostructures (vdWHs) based on TMDs have been extensively investigated owing to their prominent capabilities and unique crystal structures. In this work, an original vdWH composed of molybdenum disulfide (MoS₂) and platinum disulfide (PtS₂) was comprehensively studied as a field-effect transistor (FET) and photodetector. A gate-tunable rectifying behavior was obtained, stemming from the band design of PtS₂/MoS₂ vdWH. Upon 685 nm laser illumination, it also exhibited a superior photodetection performance with a distinctly high photoresponsivity of 403 A W^-1, a comparable detectivity of 1.07 × 10¹¹ Jones, and an excellent external quantum efficiency of 7.32 × 10⁴%. More importantly, fast rise (24 ms) and decay (21 ms) times were obtained under 685 nm light illumination attributed to the unilateral depletion region structure. Further, the photovoltaic effect and photocurrent of the heterojunction could be modulated by a back gate voltage. All these results indicated that such 2D-TMD-based vdWHs provide a new idea for realizing high-performance electronic and optoelectronic devices.

Te/SnS2 tunneling heterojunctions as high-performance photodetectors with superior self-powered properties

The tunneling heterojunctions made of two-dimensional (2D) materials have been explored to have many intriguing properties, such as ultrahigh rectification and on/off ratio, superior photoresponsivity, and improved photoresponse speed, showing great potential in achieving multifunctional and high-performance electronic and optoelectronic devices. Here, we report a systematic study of the tunneling heterojunctions consisting of 2D tellurium (Te) and Tin disulfide (SnS₂). The Te/SnS₂ heterojunctions possess type-II band alignment and can transfer to type-III one under reverse bias, showing a reverse rectification ratio of about 5000 and a current on/off ratio over 10⁴. The tunneling heterojunctions as photodetectors exhibit an ultrahigh photoresponsivity of 50.5 A W^-1 in the visible range, along with a dramatically enhanced photoresponse speed. Furthermore, due to the reasonable type-II band alignment and negligible band bending at the interface, Te/SnS₂ heterojunctions at zero bias exhibit excellent self-powered performance with a high responsivity of 2.21 A W^-1 and external quantum efficiency of 678%. The proposed heterostructure in this work provides a useful guideline for the rational design of a high-performance self-powered photodetector.

Abnormal linear dichroism transition in two-dimensional PdPS

The linear dichroism (LD) conversion shows promising applications for polarized detectors, optical transition and light propagation. However, polarity reversal always occurs at a certain wavelength in LD materials, which can only distinguish two wavelength bands as wavelength-selective photodetectors. In this study, the multi-degree-of-freedom of optical anisotropy based on 2D PdPS flakes is carefully described, in which four critical switching wavelengths are observed. Remarkably, the quadruple LD conversion shows a significant wavelength-dependent behavior, allowing us to pinpoint five wavelength bands, 200-239 nm, 239-259 nm, 259-469 nm, 469-546 nm, and 546-700 nm, for a wavelength-selective approach to photodetectors. In addition, the polarized photoresponse under 532 nm was realized with an anisotropy factor of ∼1.51 and further illustrated the in-plane anisotropy. Raman spectroscopy of PdPS flakes also shows strong phonon anisotropy. The unique wavelength-selective property shows great potential for the miniaturization and integration of photodetectors.

Ferroelectric-gated MoSe2photodetectors with high photoresponsivity

Ferroelectric transistors with semiconductors as the channel material and ferroelectrics as the gate insulator have potential applications in nanoelectronics. We report in-situ modulation of optoelectronic properties of MoSe₂thin flakes on ferroelectric 0.7PbMg_1/3Nb_2/3O₃-0.3PbTiO₃(PMN-PT). Under the excitation of 638 nm laser, the photoresponsivity can be greatly boosted to 59.8 A W^-1and the detectivity to 3.2 × 10¹⁰Jones, with the improvement rates of about 1500% and 450%, respectively. These results suggest hybrid structure photodetector of two-dimensional layered material and ferroelectric has great application prospects in photoelectric detector.

UV-light-assisted gas sensor based on PdSe2/InSe heterojunction for ppb-level NO2 sensing at room temperature

The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, the current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or by high-temperature chemical vapor deposition (CVD), which limits industrial production and is often accompanied by defects. Herein, we first fabricated the type-II p-PdSe₂/n-InSe vdWs heterostructure using the ultra-high vacuum laser molecular beam epitaxy (LMBE) technique combined with the vertical 2D stacking strategy, which is reproducible and suitable for high-volume manufacturing. This work found that the introduction of 365 nm UV light illumination can significantly improve the electrical transport properties and NO₂ sensing performance of the PdSe₂/InSe heterojunction-based device at room temperature (RT). The detailed studies confirm that the sensor based on the PdSe₂/InSe heterojunction delivers the comparable sensitivity (R_a/R_g = ∼2.6 at 10 ppm), a low limit of detection of 52 ppb, and excellent selectivity for NO₂ gas under UV light illumination, indicating great potential for NO₂ detection. Notably, the sensor possesses fast response and full recovery properties (275/1078 s) compared to the results in the dark. Furthermore, the mechanism of enhanced gas sensitivity was proposed based on the energy band alignment of the PdSe₂/InSe heterojunction with the assistance of investigating the surface potential variations. This work may pave the way for the development of high-performance, room-temperature gas sensors based on 2D vdWs heterostructures through the LMBE technique.

Rational Design of WSe2 /WS2 /WSe2 Dual Junction Phototransistor Incorporating High Responsivity and Detectivity

The excellent semiconducting properties and ultrathin morphological characteristics allow van der Waals (vdW) heterostructures based on 2D materials to be promising channel materials for the next-generation optoelectronic devices, especially in photodetectors. Although various 2D heterostructure-based photodetectors have been developed, the unavoidable trade-off between responsivity and detectivity remains a critical issue for these devices. Here, an ingenious phototransistor based on WSe₂ /WS₂ /WSe₂ dual-vdW heterostructures is constructed, performing both high responsivity and detectivity. In the charge neutrality point (gate voltage of -15 V and bias voltage of 1 V), this device demonstrates a pronounced photosensitivity, accompanying with high detectivity of 1.9 × 10¹⁴  Jones, high responsivity of 35.4 A W^-1 , and fast rise/fall time of 3.2/2.5 ms at 405 nm with power density of 60 µW cm^-2 . Density functional theory calculations, energy band profiles, and optoelectronic characteristics jointly verify that the high performance is ascribed to the distinctive device design, which not only facilitates the separation of photogenerated carriers but also produces a strong photogating effect. As a feasible application, an automotive radar system is demonstrated, proving that the device has considerable potential for application in vehicle intelligent assisted driving.

Type-I Heterostructure Based on WS2/PtS2 for High-Performance Photodetectors

van der Waals (vdW) heterodiodes composed of two-dimensional (2D) layered materials led to a new prospect in photoelectron diodes and photovoltaic devices. Existing studies have shown that Type-I heterostructures have great potential to be used as photodetectors; however, the tunneling phenomena in Type-I heterostructures have not been fully revealed. Herein, a highly efficient nn⁺ WS₂/PtS₂ Type-I vdW heterostructure photodiode is constructed. The device shows an ultrahigh reverse rectification ratio of 10⁵ owing to the transmission barrier-induced low reverse current. A unilateral depletion region is formed on WS₂, which inhibits the recombination of carriers at the interface and makes the external quantum efficiency (EQE) of the device reach 67%. Due to the tunneling mechanism of the device, which allows the co-existence of a large photocurrent and a low dark current, this device achieves a light on/off ratio of over 10⁵. In addition, this band design allows the device to maintain a high detectivity of 4.53 × 10¹⁰ Jones. Our work provides some new ideas for exploring new high-efficiency photodiodes.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS₂ nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 10⁴, fast response of 50 μs, and high detectivity of 1.64 × 10¹¹ Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

A Submicrosecond-Response Ultraviolet-Visible-Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe3

2D material (2DM) based photodetectors with broadband photoresponse are of great value for a vast number of applications such as multiwavelength photodetection, imaging, and night vision. However, compared with traditional photodetectors based on bulk material, the relatively slow speed performance of 2DM based photodetectors hinders their practical applications. Herein, a submicrosecond-response photodetector based on ternary telluride InSiTe₃ with trigonal symmetry and layered structure was demonstrated in this study. The InSiTe₃ based photodetectors exhibit an ultrafast photoresponse (545-576 ns) and broadband detection capabilities from the ultraviolet (UV) to the near-infrared (NIR) optical communication region (365-1310 nm). Besides, the photodetector presents an outstanding reversible and stable photoresponse in which the response performance remains consistent within 200 000 cycles of switch operation. These significant findings suggest that InSiTe₃ can be a promising candidate for constructing fast response broadband 2DM based optoelectronic devices.

Recessed-Channel WSe2 Field-Effect Transistor via Self-Terminated Doping and Layer-by-Layer Etching

Effective channel control with low contact resistance can be accomplished through selective ion implantation in Si and III-V semiconductor technologies; however, this approach cannot be adopted for ultrathin van der Waals materials. Herein, we demonstrate a self-aligned fabrication process based on self-terminated p-doping and layer-by-layer chemical etching to achieve low contact resistance as well as a high on/off current ratio in ultrathin tungsten diselenide (WSe₂) field-effect transistors (FETs). Damage-free layer-by-layer thinning of the WSe₂ channel is repeated up to a thickness of approximately 1.4 nm, while maintaining the selectively p-doped source/drain regions. The device characteristics of the recessed-channel WSe₂ FET are systematically monitored during this layer-by-layer recess-channel process. The WSe₂ etching rate is estimated to be 2-3 layers per cycle of oxidation and subsequent chemical etching. The self-terminated tungsten oxide (WO_X) layer grown through ultraviolet-ozone treatment induces robust p-doping in the neighboring (or underlying) WSe₂ through the electron withdrawal mechanism, which remains in the source/drain regions after channel oxide removal. The adopted self-terminated and self-aligned recess-channel process for ultrathin WSe₂ FETs enables the realization of a high on/off output current ratio (>10⁸) and field-effect mobility (∼190 cm²/V·s), while maintaining low contact resistance (0.9-6.1 kΩ·μm) without a postannealing process. The proposed facile and reproducible doping and atomic-layer-etching method for the fabrication of a recessed-channel FET with an ultrathin body can be helpful for high-performance two-dimensional semiconductor devices and is applicable to post-Si complementary metal-oxide semiconductor devices.

Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices

Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW crystals is rather limited in nature as they are only obtained from certain mother crystals with intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) crystals into ultrathin 2D-like structures have seen rapid developments to explore device building blocks of unique form factors. Herein, we explore a "peel-and-stick" approach, where a nonlayered 3D platinum sulfide (PtS) crystal, traditionally known as a cooperate mineral material, is transformed into a freestanding 2D-like membrane for electromechanical applications. The ultrathin (∼10 nm) 3D PtS films grown on large-area (>cm²) silicon dioxide/silicon (SiO₂/Si) wafers are precisely "peeled" inside water retaining desired geometries via a capillary-force-driven surface wettability control. Subsequently, they are "sticked" on strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport with an optical band gap of ∼1.24 eV. A variety of mechanically deformable strain-invariant electronic devices have been demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors and respiratory sensing face masks. This study offers new opportunities of 2D-like nonlayered semiconducting crystals for emerging mechanically reconfigurable and stretchable device technologies.