1
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Altvater M, Muratore C, Snure M, Glavin NR. Two-Step Conversion of Metal and Metal Oxide Precursor Films to 2D Transition Metal Dichalcogenides and Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2400463. [PMID: 38733217 DOI: 10.1002/smll.202400463] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Revised: 04/11/2024] [Indexed: 05/13/2024]
Abstract
The widely studied class of two-dimensional (2D) materials known as transition metal dichalcogenides (TMDs) are now well-poised to be employed in real-world applications ranging from electronic logic and memory devices to gas and biological sensors. Several scalable thin film synthesis techniques have demonstrated nanoscale control of TMD material thickness, morphology, structure, and chemistry and correlated these properties with high-performing, application-specific device metrics. In this review, the particularly versatile two-step conversion (2SC) method of TMD film synthesis is highlighted. The 2SC technique relies on deposition of a solid metal or metal oxide precursor material, followed by a reaction with a chalcogen vapor at an elevated temperature, converting the precursor film to a crystalline TMD. Herein, the variables at each step of the 2SC process including the impact of the precursor film material and deposition technique, the influence of gas composition and temperature during conversion, as well as other factors controlling high-quality 2D TMD synthesis are considered. The specific advantages of the 2SC approach including deposition on diverse substrates, low-temperature processing, orientation control, and heterostructure synthesis, among others, are featured. Finally, emergent opportunities that take advantage of the 2SC approach are discussed to include next-generation electronics, sensing, and optoelectronic devices, as well as catalysis for energy-related applications.
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Affiliation(s)
- Michael Altvater
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
- UES Inc., Dayton, OH, 45432, USA
| | - Christopher Muratore
- Department of Chemical and Materials Engineering, University of Dayton, Dayton, 45469, OH, USA
| | - Michael Snure
- Air Force Research Laboratory, Sensors Directorate, WPAFB, OH, 45433, USA
| | - Nicholas R Glavin
- Air Force Research Laboratory, Materials and Manufacturing Directorate, WPAFB, OH, 45433, USA
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2
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Wang H, Zhu X, Zhao Z, Wang X, Qian Z, Jiao L, Wang K, Li Y, Qi JJ, Asif M, Zheng Q, Xie L. In Situ Imaging of Two-Dimensional Crystal Growth Using a Heat-Resistant Optical Microscope. NANO LETTERS 2024; 24:5498-5505. [PMID: 38619556 DOI: 10.1021/acs.nanolett.4c00620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
Revealing low-dimensional material growth dynamics is critical for crystal growth engineering. However, in a practical high-temperature growth system, the crystal growth process is a black box because of the lack of heat-resistant imaging tools. Here, we develop a heat-resistant optical microscope and embed it in a chemical vapor deposition (CVD) system to investigate two-dimensional (2D) crystal growth dynamics. This in situ optical imaging CVD system can tolerate temperatures of ≤900 °C with a spatial resolution of ∼1 μm. The growth of monolayer MoS2 crystals was studied as a model for 2D crystal growth. The nucleation and growth process have been imaged. Model analysis and simulation have revealed the growth rate, diffusion coefficient, and spatial distribution of the precursor. More importantly, a new vertex-kink-ledge model has been suggested for monolayer crystal growth. This work provides a new technique for in situ microscopic imaging at high temperatures and fundamental insight into 2D crystal growth.
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Affiliation(s)
- Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Xiaokai Zhu
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaoyang Zhao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xinsheng Wang
- Institute of Biomedical Engineering, College of Life Sciences, Qingdao University, Qingdao 266071, China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Liying Jiao
- Department of Chemistry, Tsinghua University, Beijing 100084, China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - You Li
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Jun-Jie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Muhammad Asif
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Qiang Zheng
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China
- University of Chinese Academy of Sciences, Beijing 100049, China
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3
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Verma AK, Sharma BB. Experimental and Theoretical Insights into Interfacial Properties of 2D Materials for Selective Water Transport Membranes: A Critical Review. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2024; 40:7812-7834. [PMID: 38587122 DOI: 10.1021/acs.langmuir.4c00061] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
Interfacial properties, such as wettability and friction, play critical roles in nanofluidics and desalination. Understanding the interfacial properties of two-dimensional (2D) materials is crucial in these applications due to the close interaction between liquids and the solid surface. The most important interfacial properties of a solid surface include the water contact angle, which quantifies the extent of interactions between the surface and water, and the water slip length, which determines how much faster water can flow on the surface beyond the predictions of continuum fluid mechanics. This Review seeks to elucidate the mechanism that governs the interfacial properties of diverse 2D materials, including transition metal dichalcogenides (e.g., MoS2), graphene, and hexagonal boron nitride (hBN). Our work consolidates existing experimental and computational insights into 2D material synthesis and modeling and explores their interfacial properties for desalination. We investigated the capabilities of density functional theory and molecular dynamics simulations in analyzing the interfacial properties of 2D materials. Specifically, we highlight how MD simulations have revolutionized our understanding of these properties, paving the way for their effective application in desalination. This Review of the synthesis and interfacial properties of 2D materials unlocks opportunities for further advancement and optimization in desalination.
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Affiliation(s)
- Ashutosh Kumar Verma
- School of Chemical Engineering, Oklahoma State University, Stillwater, Oklahoma 74078, United States
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4
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Ben-Smith A, Choi SH, Boandoh S, Lee BH, Vu DA, Nguyen HTT, Adofo LA, Jin JW, Kim SM, Lee YH, Kim KK. Photo-oxidative Crack Propagation in Transition Metal Dichalcogenides. ACS NANO 2024; 18:3125-3133. [PMID: 38227480 DOI: 10.1021/acsnano.3c08755] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Monolayered transition-metal dichalcogenides (TMDs) are easily exposed to air, and their crystal quality can often be degraded via oxidation, leading to poor electronic and optical device performance. The degradation becomes more severe in the presence of defects, grain boundaries, and residues. Here, we report crack propagation in pristine TMD monolayers grown by chemical vapor deposition under ambient conditions and light illumination. Under a high relative humidity (RH) of ∼60% and white light illumination, the cracks appear randomly. Photo-oxidative cracks gradually propagated along the grain boundaries of the TMD monolayers. In contrast, under low RH conditions of ∼2%, cracks were scarcely observed. Crack propagation is predominantly attributed to the accumulation of water underneath the TMD monolayers, which is preferentially absorbed by hygroscopic alkali metal-based precursor residues. Crack propagation is further accelerated by the cyclic process of photo-oxidation in a basic medium, leading to localized tensile strain. We also found that such crack propagation is prevented after the removal of alkali metals via the transfer of the sample to other substrates.
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Affiliation(s)
- Andrew Ben-Smith
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Stephen Boandoh
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Byung Hoon Lee
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Duc Anh Vu
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Huong Thi Thanh Nguyen
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul 14072, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
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5
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Chen L, Cheng Z, He S, Zhang X, Deng K, Zong D, Wu Z, Xia M. Large-area single-crystal TMD growth modulated by sapphire substrates. NANOSCALE 2024; 16:978-1004. [PMID: 38112240 DOI: 10.1039/d3nr05400d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/21/2023]
Abstract
Transition metal dichalcogenides (TMDs) have recently attracted extensive attention due to their unique physical and chemical properties; however, the preparation of large-area TMD single crystals is still a great challenge. Chemical vapor deposition (CVD) is an effective method to synthesize large-area and high-quality TMD films, in which sapphires as suitable substrates play a crucial role in anchoring the source material, promoting nucleation and modulating epitaxial growth. In this review, we provide an insightful overview of different epitaxial mechanisms and growth behaviors associated with the atomic structure of sapphire surfaces and the growth parameters. First, we summarize three epitaxial growth mechanisms of TMDs on sapphire substrates, namely, van der Waals epitaxy, step-guided epitaxy, and dual-coupling-guided epitaxy. Second, we introduce the effects of polishing, cutting, and annealing processing of the sapphire surface on the TMD growth. Finally, we discuss the influence of other growth parameters, such as temperature, pressure, carrier gas, and substrate position, on the growth kinetics of TMDs. This review might provide deep insights into the controllable growth of large-area single-crystal TMDs on sapphires, which will propel their practical applications in high-performance nanoelectronics and optoelectronics.
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Affiliation(s)
- Lina Chen
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zhaofang Cheng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
| | - Shaodan He
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Xudong Zhang
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Kelun Deng
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Dehua Zong
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Zipeng Wu
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
| | - Minggang Xia
- Department of Applied Physics, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China.
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
- Shaanxi Province Key Laboratory of Quantum Information and Optoelectronic Quantum Devices, School of Physics, Xi'an Jiaotong University, 710049, People's Republic of China
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6
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Wu Q, He L, Wang D, Nong H, Wang J, Cai Z, Zhao S, Zheng R, Lai S, Zhang R, Feng Q, Liu B. Resolidified Chalcogen-Assisted Growth of Bilayer Semiconductors with Controlled Stacking Orders. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305506. [PMID: 37661344 DOI: 10.1002/smll.202305506] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Revised: 08/14/2023] [Indexed: 09/05/2023]
Abstract
Bilayer semiconductors have attracted much attention due to their stacking-order-dependent properties. However, as both 3R- and 2H-stacking are energetically stable at high temperatures, most of the high-temperature grown bilayer materials have random 3R- or 2H-stacking orders, leading to non-uniformity in optical and electrical properties. Here, a chemical vapor deposition method is developed to grow bilayer semiconductors with controlled stacking order by modulating the resolidified chalcogen precursors supply kinetics. Taking tungsten disulfide (WS2 ) as an example, pure 3R-stacking (100%) and 2H-stacking dominated (87.6%) bilayer WS2 are grown by using this method and both show high structural and optical quality and good uniformity. Importantly, the bilayer 3R-stacking WS2 shows higher field effect mobility than 2H-stacking samples, due to the difference in stacking order-dependent surface potentials. This method is universal for growing other bilayer semiconductors with controlled stacking orders including molybdenum disulfide and tungsten diselenide, paving the way to exploit stacking-order-dependent properties of these family of emerging bilayer materials.
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Affiliation(s)
- Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Liqiong He
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Dan Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Jingwei Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University, Wuxi, 214122, P. R. China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- School of Electronic Information Engineering, Foshan University, Foshan, 528000, P. R. China
| | - Rongxu Zheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shen Lai
- Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau SAR, 999078, P. R. China
| | - Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qingliang Feng
- Key Laboratory of Special Functional and Smart Polymer Materials of Ministry of Industry and Information Technology School of Chemistry and Chemical Engineering Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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7
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Dziobek-Garrett R, Hilliard S, Sriramineni S, Ambrozaite O, Zhu Y, Hudak BM, Brintlinger TH, Chowdhury T, Kempa TJ. Controlling Morphology and Excitonic Disorder in Monolayer WSe 2 Grown by Salt-Assisted CVD Methods. ACS NANOSCIENCE AU 2023; 3:441-450. [PMID: 38144700 PMCID: PMC10740127 DOI: 10.1021/acsnanoscienceau.3c00028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/19/2023] [Revised: 08/08/2023] [Accepted: 08/08/2023] [Indexed: 12/26/2023]
Abstract
Chemical synthesis is a compelling alternative to top-down fabrication for controlling the size, shape, and composition of two-dimensional (2D) crystals. Precision tuning of the 2D crystal structure has broad implications for the discovery of new phenomena and the reliable implementation of these materials in optoelectronic, photovoltaic, and quantum devices. However, precise and predictable manipulation of the edge structure in 2D crystals through gas-phase synthesis is still a formidable challenge. Here, we demonstrate a salt-assisted low-pressure chemical vapor deposition method that enables tuning W metal flux during growth of 2D WSe2 monolayers and, thereby, direct control of their edge structure and optical properties. The degree of structural disorder in 2D WSe2 is a direct function of the W metal flux, which is controlled by adjusting the mass ratio of WO3 to NaCl. This edge disorder then couples to excitonic disorder, which manifests as broadened and spatially varying emission profiles. Our work links synthetic parameters with analyses of material morphology and optical properties to provide a unified understanding of intrinsic limits and opportunities in synthetic 2D materials.
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Affiliation(s)
- Reynolds Dziobek-Garrett
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Sachi Hilliard
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Shreya Sriramineni
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Ona Ambrozaite
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Yifei Zhu
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
| | - Bethany M. Hudak
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Todd H. Brintlinger
- Materials
Science & Technology Division, U.S.
Naval Research Laboratory, Washington, D.C. 20375, United States of America
| | - Tomojit Chowdhury
- Department
of Chemistry and Chicago Materials Research Center, University of Chicago, Chicago, Illinois 60637, United States of America
| | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
of America
- Department
of Materials Science and Engineering, Johns
Hopkins University, Baltimore, Maryland 21218, United States of America
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8
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Cordova DM, Chua K, Huynh RM, Aoki T, Arguilla MQ. Anisotropy-Driven Crystallization of Dimensionally Resolved Quasi-1D Van der Waals Nanostructures. J Am Chem Soc 2023; 145:22413-22424. [PMID: 37713247 PMCID: PMC10591320 DOI: 10.1021/jacs.3c05887] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Indexed: 09/16/2023]
Abstract
Unusual behavior in solids emerges from the complex interplay between crystalline order, composition, and dimensionality. In crystals comprising weakly bound one-dimensional (1D) or quasi-1D (q-1D) chains, properties such as charge density waves, topologically protected states, and indirect-to-direct band gap crossovers have been predicted to arise. However, the experimental demonstration of many of these nascent physics in 1D or q-1D van der Waals (vdW) crystals is obscured by the highly anisotropic bonding between the chains, stochasticity of top-down exfoliation, and the lack of synthetic strategies to control bottom-up growth. Herein, we report the directed crystallization of a model q-1D vdW phase, Sb2S3, into dimensionally resolved nanostructures. We demonstrate the uncatalyzed growth of highly crystalline Sb2S3 nanowires, nanoribbons, and quasi-2D nanosheets with thicknesses in the range of 10 to 100 nm from the bottom-up crystallization of [Sb4S6]n chains. We found that dimensionally resolved nanostructures emerge from two distinct chemical vapor growth pathways defined by diverse covalent intrachain and anisotropic vdW interchain interactions and controlled precursor ratios in the vapor phase. At sub-100 nm nanostructure thicknesses, we observe the hardening of phonon modes, blue-shifting of optical band gaps, and the emergence of a new high-energy photoluminescence peak. The directional growth of weakly bound 1D ribbons or chains into well-resolved nanocrystalline morphologies provides opportunities to develop ordered nanostructures and hierarchical assemblies that are suitable for a wide range of optoelectronic and quantum devices.
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Affiliation(s)
| | - Kenneth Chua
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Rebecca Mai Huynh
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Toshihiro Aoki
- Irvine
Materials Research Institute, University
of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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9
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Walke P, Kaupmees R, Grossberg-Kuusk M, Krustok J. Unusual Defect-Related Room-Temperature Emission from WS 2 Monolayers Synthesized through a Potassium-Based Precursor. ACS OMEGA 2023; 8:37958-37970. [PMID: 37867715 PMCID: PMC10586178 DOI: 10.1021/acsomega.3c03476] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2023] [Accepted: 08/29/2023] [Indexed: 10/24/2023]
Abstract
Alkali-metal-based synthesis of transition metal dichalcogenide (TMD) monolayers is an established strategy for both ultralarge lateral growth and promoting the metastable 1T phase. However, whether this can also lead to modified optical properties is underexplored, with reported photoluminescence (PL) spectra from semiconducting systems showing little difference from more traditional syntheses. Here, we show that the growth of WS2 monolayers from a potassium-salt precursor can lead to a pronounced low-energy emission in the PL spectrum. This is seen 200-300 meV below the A exciton and can dominate the signal at room temperature. The emission is spatially heterogeneous, and its presence is attributed to defects in the layer due to sublinear intensity power dependence, a noticeable aging effect, and insensitivity to washing in water and acetone. Interestingly, statistical analysis links the band to an increase in the width of the A1g Raman band. The emission can be controlled by altering when hydrogen is introduced into the growth process. This work demonstrates intrinsic and intense defect-related emission at room temperature and establishes further opportunities for tuning TMD properties through alkali-metal precursors.
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Affiliation(s)
- Peter Walke
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Reelika Kaupmees
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Maarja Grossberg-Kuusk
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
| | - Jüri Krustok
- Department of Materials and
Environmental Technology, Tallinn University
of Technology, Ehitajate tee 5, 19086 Tallinn, Estonia
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10
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Guo J, Peng R, Zhang X, Xin Z, Wang E, Wu Y, Li C, Fan S, Shi R, Liu K. Perforated Carbon Nanotube Film Assisted Growth of Uniform Monolayer MoS 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300766. [PMID: 36866500 DOI: 10.1002/smll.202300766] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Revised: 02/16/2023] [Indexed: 06/08/2023]
Abstract
Scaling up the chemical vapor deposition (CVD) of monolayer transition metal dichalcogenides (TMDCs) is in high demand for practical applications. However, for CVD-grown TMDCs on a large scale, there are many existing factors that result in their poor uniformity. In particular, gas flow, which usually leads to inhomogeneous distributions of precursor concentrations, has yet to be well controlled. In this work, the growth of uniform monolayer MoS2 on a large scale by the delicate control of gas flows of precursors, which is realized by vertically aligning a well-designed perforated carbon nanotube (p-CNT) film face-to-face with the substrate in a horizontal tube furnace, is achieved. The p-CNT film releases gaseous Mo precursor from the solid part and allows S vapor to pass through the hollow part, resulting in uniform distributions of both gas flow rate and precursor concentrations near the substrate. Simulation results further verify that the well-designed p-CNT film guarantees a steady gas flow and a uniform spatial distribution of precursors. Consequently, the as-grown monolayer MoS2 shows quite good uniformity in geometry, density, structure, and electrical properties. This work provides a universal pathway for the synthesis of large-scale uniform monolayer TMDCs, and will advance their applications in high-performance electronic devices.
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Affiliation(s)
- Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Xiaolong Zhang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Shoushan Fan
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing, 100084, P. R. China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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11
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Mostafavi AH, Mishra AK, Gallucci F, Kim JH, Ulbricht M, Coclite AM, Hosseini SS. Advances in surface modification and functionalization for tailoring the characteristics of thin films and membranes via chemical vapor deposition techniques. J Appl Polym Sci 2023. [DOI: 10.1002/app.53720] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/12/2023]
Affiliation(s)
| | - Ajay Kumar Mishra
- College of Medicine and Chemical Engineering Hebei University of Science and Technology Shijiazhuang China
- Division of Nanomaterials Academy of Nanotechnology and Waste Water Innovations Johannesburg South Africa
- Department of Chemistry Durban University of Technology Durban South Africa
| | - Fausto Gallucci
- Inorganic Membranes and Membrane Reactors, Sustainable Process Engineering, Department of Chemical Engineering and Chemistry Eindhoven University of Technology Eindhoven MB The Netherlands
| | - Jong Hak Kim
- Department of Chemical and Biomolecular Engineering Yonsei University Seoul South Korea
| | - Mathias Ulbricht
- Lehrstuhl für Technische Chemie II Universität Duisburg‐Essen Essen Germany
| | - Anna Maria Coclite
- Institute of Solid State Physics, NAWI Graz Graz University of Technology Graz Austria
| | - Seyed Saeid Hosseini
- Institute for Nanotechnology and Water Sustainability (iNanoWS), College of Science, Engineering and Technology University of South Africa Johannesburg South Africa
- Department of Chemical Engineering Vrije Universiteit Brussel Brussels Belgium
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12
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Wang QB, Xu QQ, Yang MZ, Wu ZS, Xia XC, Yin JZ, Han ZH. Vapor-Liquid-Solid Growth of Site-Controlled Monolayer MoS 2 Films Via Pressure-Induc ed Supercritical Phase Nucleation. ACS APPLIED MATERIALS & INTERFACES 2023; 15:17396-17405. [PMID: 36950967 DOI: 10.1021/acsami.3c01407] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
In this study, a novel pressure-induced supercritical phase nucleation method is proposed to synthesize monolayer MoS2 films, which is promoter free and can avoid contamination of films derived from these heterogeneous promoters in most of the existing techniques. The low-crystallinity and size-controlled MoO2(acac)2 particles are recrystallized on the substrate via the pressure-sensitive solvent capacity of supercritical CO2 and these particles are used as growth sites. The size of single-crystal MoS2 on the substrate is found to be dependent on the wetting area of the pyrolyzed precursor droplets (MoO2) on the surface, and the formation of continuous films with high coverage is mainly controlled by the coalescence of MoO2 droplets. It is enhanced by the increase of the nucleation site density, which can be adjusted by the supersaturation of the supercritical fluid solution. Our findings pave a new way for the controllable growth of MoS2 and other two-dimensional materials and provide sufficient and valuable evidence for vapor-liquid-solid growth.
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Affiliation(s)
- Qi-Bo Wang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Qin-Qin Xu
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Ming-Zhe Yang
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhong-Shuai Wu
- State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, 116024 Dalian, China
| | - Xiao-Chuan Xia
- School of Physics & School of Microelectronics, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Jian-Zhong Yin
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
| | - Zhen-Hua Han
- State Key Laboratory of Fine Chemicals, School of Chemical Engineering, Dalian University of Technology, 2 Ling Gong Road, 116024 Dalian, China
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13
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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14
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Dong J, Ding D, Jin C, Liu Y, Ding F. Edge Reconstruction-Dependent Growth Kinetics of MoS 2. ACS NANO 2023; 17:127-136. [PMID: 36534396 DOI: 10.1021/acsnano.2c05397] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Understanding the growth mechanisms of multielement two-dimensional (2D) crystals is challenging because of the unbalanced stoichiometry and possible reconstruction of their edges. Here, we present a systematic theoretical study on the chemical vapor deposition (CVD) growth mechanism of MoS2. We found that the growth kinetics of MoS2 highly depends on its edge reconstruction determined by concentrations of Mo and S in the growth environment. Based on the calculated energies of nucleation and propagation of various MoS2 edges, we predicted the transition of a MoS2 island growth from a regime of a triangle enclosed by Mo-terminated zigzag edges that are passivated by 50% S (Mo-II edges), to a regime of continuous evolution within a triangle, hexagon, and inverted triangle with 75%-S-terminated edges (S-III edges) and Mo-II edges, and finally to a regime of triangles with Mo-terminated zigzag edges that are passivated by 100% S (Mo-III edges) by tuning the growth condition from Mo-rich to S-rich, which provides a reasonable explanation to many experimental observations. This study provides a general guideline on theoretical studies of 2D crystals' growth mechanisms, deepens our understanding on the growth mechanism of multielement 2D crystals, and is beneficial for the controllable synthesis of various 2D crystals.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan44919, Republic of Korea
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Degong Ding
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, People's Republic of China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang310027, People's Republic of China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan44919, Republic of Korea
- Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan44919, Republic of Korea
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15
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Rajarapu R, Barman PK, Yadav R, Biswas R, Devaraj M, Poudyal S, Biswal B, Laxmi V, Pradhan GK, Raghunathan V, Nayak PK, Misra A. Pulsed Carrier Gas Assisted High-Quality Synthetic 3 R-Phase Sword-like MoS 2: A Versatile Optoelectronic Material. ACS NANO 2022; 16:21366-21376. [PMID: 36468945 DOI: 10.1021/acsnano.2c09673] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Synthesizing a material with the desired polymorphic phase in a chemical vapor deposition (CVD) process requires a delicate balance among various thermodynamic variables. Here, we present a methodology to synthesize rhombohedral (3R)-phase MoS2 in a well-defined sword-like geometry having lengths up to 120 μm, uniform width of 2-3 μm and thickness of 3-7 nm by controlling the carrier gas flow dynamics from continuous mode to pulsed mode during the CVD growth process. Characteristic signatures such as high degree of circular dichroism (∼58% at 100 K), distinct evolution of low-frequency Raman peaks and increasing intensity of second harmonic signals with increasing number of layers conclusively establish the 3R-phase of the material. A high value (∼844 pm/V) of second-order susceptibility for few-layer-thick MoS2 swords signifies the potential of MoS2 to serve as an atomically thin nonlinear medium. A field effect mobility of 40 cm2/V-s and Ion/Ioff ratio of ∼106 further confirm the electronic-grade standard of this 3R-phase MoS2. These findings are significant for the development of emerging quantum electronic devices utilizing valley-based physics and nonlinear optical phenomena in layered materials.
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Affiliation(s)
- Ramesh Rajarapu
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Prahalad Kanti Barman
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Renu Yadav
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Rabindra Biswas
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Manikandan Devaraj
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Saroj Poudyal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Bubunu Biswal
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Vijay Laxmi
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Gopal K Pradhan
- Department of Physics, School of Applied Sciences, KIIT Deemed to be University, Bhubaneswar, Odisha-751024, India
| | - Varun Raghunathan
- Department of Electrical Communication Engineering, Indian Institution of Science, Bangalore- 560012, India
| | - Pramoda K Nayak
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
- Micro Nano and Bio-Fluidics Group, Indian Institute of Technology Madras, Chennai-600036, India
| | - Abhishek Misra
- Department of Physics, Indian Institute of Technology Madras, Chennai-600 036, India
- 2D Materials Research and Innovation Group, Indian Institute of Technology Madras, Chennai-600036, India
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16
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Martins Quintela MFC, Peres NMR. Wannier excitons confined in hexagonal boron nitride triangular quantum dots. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 35:035302. [PMID: 36368044 DOI: 10.1088/1361-648x/aca24f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 11/11/2022] [Indexed: 06/16/2023]
Abstract
With the ever-growing interest in quantum computing, understanding the behavior of excitons in monolayer quantum dots has become a topic of great relevance. In this paper, we consider a Wannier exciton confined in a triangular quantum dot of hexagonal boron nitride. We begin by outlining the adequate basis functions to describe a particle in a triangular enclosure, analyzing their degeneracy and symmetries. Afterwards, we discuss the excitonic Hamiltonian inside the quantum dot and study the influence of the quantum dot dimensions on the excitonic states.
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Affiliation(s)
- M F C Martins Quintela
- Department of Physics and Centre of Physics of the Universities of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
| | - N M R Peres
- Department of Physics and Centre of Physics of the Universities of Minho and Porto (CF-UM-UP), Campus of Gualtar, 4710-057 Braga, Portugal
- International Iberian Nanotechnology Laboratory (INL), Av. Mestre José Veiga, 4715-330 Braga, Portugal
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17
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Pesticide detection with covalent-organic-framework nanofilms at terahertz band. Biosens Bioelectron 2022; 209:114274. [DOI: 10.1016/j.bios.2022.114274] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/29/2021] [Revised: 04/02/2022] [Accepted: 04/08/2022] [Indexed: 11/22/2022]
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18
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Wu Q, Luo Y, Xie R, Nong H, Cai Z, Tang L, Tan J, Feng S, Zhao S, Yu Q, Lin J, Chai G, Liu B. Space-Confined One-Step Growth of 2D MoO 2 /MoS 2 Vertical Heterostructures for Superior Hydrogen Evolution in Alkaline Electrolytes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201051. [PMID: 35841344 DOI: 10.1002/smll.202201051] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2022] [Revised: 06/11/2022] [Indexed: 06/15/2023]
Abstract
2D material-based heterostructures are constructed by stacking or spicing individual 2D layers to create an interface between them, which have exotic properties. Here, a new strategy for the in situ growth of large numbers of 2D heterostructures on the centimeter-scale substrate is developed. In the method, large numbers of 2D MoS2 , MoO2 , or their heterostructures of MoO2 /MoS2 are controllably grown in the same setup by simply tuning the gap distance between metal precursor and growth substrate, which changes the concentration of metal precursors feed. A lateral force microscope is used first to identify the locations of each material in the heterostructures, which have MoO2 on the top of MoS2 . Noteworthy, the creation of a clean interface between atomic thin MoO2 (metallic) and MoS2 (semiconducting) results in a different electronic structure compared with pure MoO2 and MoS2 . Theoretical calculations show that the charge redistribution at such an interface results in an improved HER performance on the MoO2 /MoS2 heterostructures, showing an overpotential of 60 mV at 10 mA cm-2 and a Tafel slope of 47 mV dec-1 . This work reports a new strategy for the in situ growth of heterostructures on large-scale substrates and provides platforms to exploit their applications.
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Affiliation(s)
- Qinke Wu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Ruikuan Xie
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Huiyu Nong
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Qiangmin Yu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Guoliang Chai
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, 350002, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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19
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Tang Z, Xu L, Shu K, Yang J, Tang H. Fabrication of TiO2 @MoS2 heterostructures with improved visible light photocatalytic activity. Colloids Surf A Physicochem Eng Asp 2022. [DOI: 10.1016/j.colsurfa.2022.128686] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
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20
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Evolution of WSe2 Flakes Synthesized by Thermally Assisted Conversion Method. COATINGS 2022. [DOI: 10.3390/coatings12030353] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
We report the synthesis of tungsten diselenide (WSe2) flakes and continuous layers using an atmospheric pressure thermally assisted conversion (TAC) method, where the tungsten (W) layers were pre-deposited by a magnetron sputtering system onto fused silica substrates. Optical microscopy (OM) and atomic force microscopy (AFM) mapping predominantly revealed the formation of isolated flakes with different shapes, mainly concentrated near the substrate’s edges, which tended to form clusters and to further overlap to continuous layers, moving to the central part of the fused silica substrates. Raman spectroscopy and photoluminescence measurements confirmed the existence of atomically thin flakes and 2H-WSe2 continuous layers. The measured current–voltage characteristics indicated Ohmic behavior under dark conditions and photo illumination. Finally, the demonstrated resistor-like behavior suggested unlimited prospects for WSe2 integration into a variety of heterostructures.
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21
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Yao B, Li R, Zhang C, Zhou Z, Fu Z, Huang X, Yuan G, Xu J, Gao L. Tuning the morphology of 2D transition metal chalcogenides via oxidizing conditions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:195001. [PMID: 35158340 DOI: 10.1088/1361-648x/ac54e5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2022] [Accepted: 02/14/2022] [Indexed: 06/14/2023]
Abstract
Two-dimensional transition metal chalcogenides (TMCs) are emerging as an intriguing platform to realize nascent properties in condensed matter physics, materials science and device engineering. Controllable growing of TMCs becomes increasingly important, especially for the layer number, doping, and morphology. Here, we successfully tune the morphology of MoS2, MoSe2, WS2and WSe2, from homogenous films to individual single crystalline grains only via changing the oxidizing growth conditions. The oxidization degrees are determined by the oxygen that adsorbed on substrates and the oxygen concentrations in reaction gas together. We find the homogenous films are easily formed under the reductive conditions, triangular grains prefer the weak oxidizing conditions, and medium oxidizing conditions bring in dendritic grains with higher oxygen doping and inhomogenous photoluminescence intensities from edge to interior regions shown in the dendritic grains. These growth rules under different oxidizing conditions are easily generalized to other TMCs, which also show potential for growing specific TMCs with designed oxygen doping levels.
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Affiliation(s)
- Bing Yao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Rongsheng Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Chenxi Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zhenjia Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Zihao Fu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Xianlei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Guowen Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Jie Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Libo Gao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory for Nanotechnology, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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22
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Bhowmik S, Govind Rajan A. Chemical vapor deposition of 2D materials: A review of modeling, simulation, and machine learning studies. iScience 2022; 25:103832. [PMID: 35243221 PMCID: PMC8857588 DOI: 10.1016/j.isci.2022.103832] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022] Open
Abstract
Chemical vapor deposition (CVD) is extensively used to produce large-area two-dimensional (2D) materials. Current research is aimed at understanding mechanisms underlying the nucleation and growth of various 2D materials, such as graphene, hexagonal boron nitride (hBN), and transition metal dichalcogenides (e.g., MoS2/WSe2). Herein, we survey the vast literature regarding modeling and simulation of the CVD growth of 2D materials and their heterostructures. We also focus on newer materials, such as silicene, phosphorene, and borophene. We discuss how density functional theory, kinetic Monte Carlo, and reactive molecular dynamics simulations can shed light on the thermodynamics and kinetics of vapor-phase synthesis. We explain how machine learning can be used to develop insights into growth mechanisms and outcomes, as well as outline the open knowledge gaps in the literature. Our work provides consolidated theoretical insights into the CVD growth of 2D materials and presents opportunities for further understanding and improving such processes
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23
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Zhou D, Fuentes-Cabrera M, Singh A, Unocic RR, Carrillo JMY, Xiao K, Li Y, Li B. Atomic Edge-Guided Polyethylene Crystallization on Monolayer Two-Dimensional Materials. Macromolecules 2022. [DOI: 10.1021/acs.macromol.1c01978] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Dong Zhou
- Department of Mechanical Engineering, Villanova University, Villanova, Pennsylvania 19085, United States
- Hybrid Nano-Architectures and Advanced Manufacturing Laboratory, Villanova University, Villanova, Pennsylvania 19085, United States
| | - Miguel Fuentes-Cabrera
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Akash Singh
- Department of Industrial and Enterprise Systems Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, United States
| | - Raymond R. Unocic
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Jan Michael Y. Carrillo
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Yumeng Li
- Department of Industrial and Enterprise Systems Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, United States
| | - Bo Li
- Department of Mechanical Engineering, Villanova University, Villanova, Pennsylvania 19085, United States
- Hybrid Nano-Architectures and Advanced Manufacturing Laboratory, Villanova University, Villanova, Pennsylvania 19085, United States
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24
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Yuan R, Chen L, Wu C. Heat Conduction Behavior of Two-Dimensional Nanomaterials and Their Interface Regulation ※. ACTA CHIMICA SINICA 2022. [DOI: 10.6023/a21120616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
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25
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Yu C, Li X, Li X, Yang J. High Curie Temperature and Intrinsic Ferromagnetic Half-Metallicity in Mn 2X 3 (X = S, Se, Te) Nanosheets. J Phys Chem Lett 2021; 12:11790-11794. [PMID: 34860522 DOI: 10.1021/acs.jpclett.1c03444] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) intrinsic half-metallic materials with room-temperature ferromagnetism, sizable magnetic anisotropy energy (MAE), and wide half-metallic gap are excellent candidates for pure spin generation, injection, and transport in nanospintronic applications. However, until now, such 2D half metallicity has been rarely observed in experiment. In this work, by using first-principles calculations, we design a series of such materials, namely, Mn2X3 (X = S, Se, Te) nanosheets, which could be obtained by controlling the thickness of synthesized α-MnX(111) nanofilm to a quintuple X-Mn-X-Mn-X layer. All these nanosheets are dynamically and thermally stable. Electronic and magnetic studies reveal they are intrinsic half metals with high Curie temperatures between 718 and 820 K, sizable MAEs with -1.843 meV/Mn for Mn2Te3 nanosheet, and wide half-metallic gaps from 1.55 to 1.94 eV. Above all, the outstanding features of Mn2X3 nanosheets make them promising in fabricating nanospintronic devices working at room temperature.
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Affiliation(s)
- Cuiju Yu
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiangyang Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xingxing Li
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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26
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Bian R, Li C, Liu Q, Cao G, Fu Q, Meng P, Zhou J, Liu F, Liu Z. Recent progress in the synthesis of novel two-dimensional van der Waals materials. Natl Sci Rev 2021; 9:nwab164. [PMID: 35591919 PMCID: PMC9113016 DOI: 10.1093/nsr/nwab164] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/29/2021] [Revised: 07/21/2021] [Accepted: 08/15/2021] [Indexed: 11/15/2022] Open
Abstract
Abstract
The last decade has witnessed the significant progress of physical fundamental research and great success of practical application in two-dimensional (2D) van der Waals (vdW) materials since the discovery of graphene in 2004. To date, vdW materials is still a vibrant and fast-expanding field, where tremendous reports have been published covering topics from cutting-edge quantum technology to urgent green energy, and so on. Here, we briefly review the emerging hot physical topics and intriguing materials, such as 2D topological materials, piezoelectric materials, ferroelectric materials, magnetic materials and twistronic heterostructures. Then, various vdW material synthetic strategies are discussed in detail, concerning the growth mechanisms, preparation conditions and typical examples. Finally, prospects and further opportunities in the booming field of 2D materials are addressed.
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Affiliation(s)
| | | | | | - Guiming Cao
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- CNRS-International-NTU-Thales Research Alliance (CINTRA), Singapore 637553, Singapore
| | - Peng Meng
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jiadong Zhou
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, and School of Physics, Beijing Institute of Technology, Beijing 100081, China
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27
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Dong J, Zhang L, Wu B, Ding F, Liu Y. Theoretical Study of Chemical Vapor Deposition Synthesis of Graphene and Beyond: Challenges and Perspectives. J Phys Chem Lett 2021; 12:7942-7963. [PMID: 34387496 DOI: 10.1021/acs.jpclett.1c02316] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have attracted great attention in recent years because of their unique dimensionality and related properties. Chemical vapor deposition (CVD), a crucial technique for thin-film epitaxial growth, has become the most promising method of synthesizing 2D materials. Different from traditional thin-film growth, where strong chemical bonds are involved in both thin films and substrates, the interaction in 2D materials and substrates involves the van der Waals force and is highly anisotropic, and therefore, traditional thin-film growth theories cannot be applied to 2D material CVD synthesis. During the last 15 years, extensive theoretical studies were devoted to the CVD synthesis of 2D materials. This Perspective attempts to present a theoretical framework for 2D material CVD synthesis as well as the challenges and opportunities in exploring CVD mechanisms. We hope that this Perspective can provide an in-depth understanding of 2D material CVD synthesis and can further stimulate 2D material synthesis.
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Affiliation(s)
- Jichen Dong
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Leining Zhang
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Feng Ding
- Centre for Multidimensional Carbon Materials, Institute for Basic Science, Ulsan 44919, South Korea
- School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, South Korea
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China
- University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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28
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Zang L, Chen L, Tan D, Cao X, Sun N, Jiang C. Research on Multi‐morphology Evolution of MoS
2
in Chemical Vapor Deposition. ChemistrySelect 2021. [DOI: 10.1002/slct.202101843] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Affiliation(s)
- Lingyu Zang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Long Chen
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Dongchen Tan
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Xuguang Cao
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Nan Sun
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
| | - Chengming Jiang
- School of Mechanical Engineering Dalian University of Technology Dalian 116024 China
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29
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Wang Q, Shi R, Zhao Y, Huang R, Wang Z, Amini A, Cheng C. Recent progress on kinetic control of chemical vapor deposition growth of high-quality wafer-scale transition metal dichalcogenides. NANOSCALE ADVANCES 2021; 3:3430-3440. [PMID: 36133721 PMCID: PMC9417528 DOI: 10.1039/d1na00171j] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/06/2021] [Accepted: 05/04/2021] [Indexed: 06/14/2023]
Abstract
2D transition metal dichalcogenides (TMDs) have attracted significant attention due to their unique physical properties. Chemical vapor deposition (CVD) is generally a promising method to prepare ideal TMD films with high uniformity, large domain size, good single-crystallinity, etc., at wafer-scale for commercial uses. However, the CVD-grown TMD samples often suffer from poor quality due to the improper control of reaction kinetics and lack of understanding about the phenomenon. In this review, we focus on several key challenges in the controllable CVD fabrication of high-quality wafer-scale TMD films and highlight the importance of the control of precursor concentration, nucleation density, and oriented growth. The remaining difficulties in the field and prospective directions of the related topics are further summarized.
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Affiliation(s)
- Qun Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Run Shi
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
- Department of Physics and Center for Quantum Materials, Hong Kong University of Science and Technology Hong Kong People's Republic of China
| | - Yaxuan Zhao
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Runqing Huang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Zixu Wang
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
| | - Abbas Amini
- Center for Infrastructure Engineering, Western Sydney University Kingswood NSW 2751 Australia
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology Shenzhen 518055 People's Republic of China
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30
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Park JH, Lu AY, Shen PC, Shin BG, Wang H, Mao N, Xu R, Jung SJ, Ham D, Kern K, Han Y, Kong J. Synthesis of High-Performance Monolayer Molybdenum Disulfide at Low Temperature. SMALL METHODS 2021; 5:e2000720. [PMID: 34927911 DOI: 10.1002/smtd.202000720] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/13/2020] [Revised: 11/04/2020] [Indexed: 06/14/2023]
Abstract
The large-area synthesis of high-quality MoS2 plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS2 require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS2 with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS2 exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm2 V-1 s-1 at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS2 growth process via a geometric model of the MoS2 flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.
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Affiliation(s)
- Ji-Hoon Park
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Ang-Yu Lu
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Pin-Chun Shen
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Bong Gyu Shin
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Nannan Mao
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Renjing Xu
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Soon Jung Jung
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Donhee Ham
- School of Engineering and Applied Sciences, Harvard University, Cambridge, MA, 02138, USA
| | - Klaus Kern
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
- Institut de Physique, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
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31
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Abstract
The carrier gas flow field plays a vital role in the chemical vapor deposition (CVD) process of two dimensional (2D) MoS2 crystal, which was studied by simulations and experiments. Different carrier gas flow fields were studied by utilizing three types of precursor carrier which affected the local gas flow field significantly. The experiment results showed that the appropriate precursor vapor concentration could be achieved by local carrier gas flow field conditioning, resulting in single 2D MoS2 crystals of a large size and a high coating rate of 2D MoS2 crystal on the target substrate surface. The carrier gas flow also contributed to the growth of the 2D MoS2 crystal when it flew towards the target surface. The size of deposited single 2D MoS2 crystal reached tens of micrometers and a few layers of 2D MoS2 crystal were characterized and confirmed.
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32
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Zatko V, Dubois SMM, Godel F, Carrétéro C, Sander A, Collin S, Galbiati M, Peiro J, Panciera F, Patriarche G, Brus P, Servet B, Charlier JC, Martin MB, Dlubak B, Seneor P. Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures. ACS NANO 2021; 15:7279-7289. [PMID: 33755422 DOI: 10.1021/acsnano.1c00544] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III-V semiconductors' successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.
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Affiliation(s)
- Victor Zatko
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Simon Mutien-Marie Dubois
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cécile Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Marta Galbiati
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Julian Peiro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Federico Panciera
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Gilles Patriarche
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120 Palaiseau, France
| | - Pierre Brus
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Bernard Servet
- Thales Research and Technology, 1 Avenue Augustin Fresnel, 91767 Palaiseau, France
| | - Jean-Christophe Charlier
- Institute of Condensed Matter and Nanosciences (IMCN), Université Catholique de Louvain, B-1348 Louvain-la-Neuve, Belgium
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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33
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Wang S, Cui X, Jian C, Cheng H, Niu M, Yu J, Yan J, Huang W. Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2005735. [PMID: 33719078 DOI: 10.1002/adma.202005735] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2020] [Revised: 10/30/2020] [Indexed: 06/12/2023]
Abstract
The layer-by-layer assembly of 2D transition metal dichalcogenide monolayer blocks to form a 3D stack, with a precisely chosen sequence/angle, is the newest development for these materials. In this way, one can create "van der Waals heterostructures (HSs)," opening up a new realm of materials engineering and novel devices with designed functionalities. Herein, a detailed systematic review of transition metal dichalcogenide stacking-engineered heterostructures, from controllable fabrication to typical characterization, and stacking-correlated physical behaviors is presented. Furthermore, recent advances in stacking design, such as stacking sequence, twist angles, and moiré superlattice heterojunctions, are also comprehensively summarized. Finally, the remaining challenges and possible strategies for using stacking engineering to tune the properties of 2D materials are also outlined.
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Affiliation(s)
- Shixuan Wang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Xuehao Cui
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Chang'e Jian
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Haowei Cheng
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Mengmeng Niu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jia Yu
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Jiaxu Yan
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (Nanjing Tech), 30 South Puzhu Road, Nanjing, 211800, China
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
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34
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Li S, Sun J, Guan J. Strategies to improve electrocatalytic and photocatalytic performance of two-dimensional materials for hydrogen evolution reaction. CHINESE JOURNAL OF CATALYSIS 2021. [DOI: 10.1016/s1872-2067(20)63693-2] [Citation(s) in RCA: 60] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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35
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Chen Y, Sun M. Two-dimensional WS 2/MoS 2 heterostructures: properties and applications. NANOSCALE 2021; 13:5594-5619. [PMID: 33720254 DOI: 10.1039/d1nr00455g] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
The successful fabrication of WS2/MoS2 heterostructures provides more possibilities for optoelectronic and thermoelectric applications than graphene because of their direct bandgap characteristics; therefore, scientific investigations on WS2/MoS2 heterostructures are more significant and thriving. In this paper, we review the latest research progress in WS2/MoS2 heterostructures, and look forward to their properties and applications. Firstly, we analyze the crystal structure and electronic structure of WS2, MoS2, and their heterostructures. Secondly, we comprehensively present the widely used methods for preparing heterostructures. Finally, based on the unique physical characteristics of WS2/MoS2 heterostructures, we focus on their properties and applications in mechanics, electronics, optoelectronics, and thermoelectronics.
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Affiliation(s)
- Yichuan Chen
- School of Mathematics and Physics, Beijing Advanced Innovation Center for Materials Genome Engineering, University of Science and Technology Beijing, Beijing, 100083, PR China.
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36
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Ahn C, Park Y, Shin S, Ahn JG, Song I, An Y, Jung J, Kim CS, Kim JH, Bang J, Kim D, Baik J, Lim H. Growth of Monolayer and Multilayer MoS 2 Films by Selection of Growth Mode: Two Pathways via Chemisorption and Physisorption of an Inorganic Molecular Precursor. ACS APPLIED MATERIALS & INTERFACES 2021; 13:6805-6812. [PMID: 33497202 DOI: 10.1021/acsami.0c19591] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We report facile growth methods for high-quality monolayer and multilayer MoS2 films using MoOCl4 as the vapor-phase molecular Mo precursor. Compared to the conventional covalent solid-type Mo precursors, the growth pressure of MoOCl4 can be precisely controlled. This enables the selection of growth mode by adjusting growth pressure, which facilitates the control of the growth behavior as the growth termination at a monolayer or as the continuous growth to a multilayer. In addition, the use of carbon-free precursors eliminates concerns about carbon contamination in the produced MoS2 films. Systematic studies for unveiling the growth mechanism proved two growth modes, which are predominantly the physisorption and chemisorption of MoOCl4. Consequently, the thickness of MoS2 can be controlled by our method as the application demands.
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Affiliation(s)
- Chaehyeon Ahn
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Younghee Park
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Seunghyun Shin
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jong-Guk Ahn
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, 1375 Gyeongdong-ro, Andong, Gyeongsangbuk-do 36729, Republic of Korea
| | - Youngjoon An
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jaehoon Jung
- Department of Chemistry, University of Ulsan, 12 Technosaneop-ro 55-gil, Nam-gu, Ulsan 44776, Republic of Korea
| | - Chung Soo Kim
- Korea Institute of Ceramic Engineering and Technology, 101 Soho-ro, Jinju-si, Gyeongsangnam-do 52851, Republic of Korea
| | - Jee Hyeon Kim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jiwon Bang
- Department of Bio-Nano Chemistry, Wonkwang University, 460 Iksandae-ro, Iksan, Jeonbuk 54538, Republic of Korea
| | - Daehyun Kim
- Pohang Accelerator Laboratory, 80 Jigok-ro 127 beon-gil, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Jaeyoon Baik
- Pohang Accelerator Laboratory, 80 Jigok-ro 127 beon-gil, Nam-gu, Pohang-si, Gyeongsangbuk-do 37673, Republic of Korea
| | - Hyunseob Lim
- Department of Chemistry, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
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37
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Och M, Martin MB, Dlubak B, Seneor P, Mattevi C. Synthesis of emerging 2D layered magnetic materials. NANOSCALE 2021; 13:2157-2180. [PMID: 33475647 DOI: 10.1039/d0nr07867k] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
van der Waals atomically thin magnetic materials have been recently discovered. They have attracted enormous attention as they present unique magnetic properties, holding potential to tailor spin-based device properties and enable next generation data storage and communication devices. To fully understand the magnetism in two-dimensions, the synthesis of 2D materials over large areas with precise thickness control has to be accomplished. Here, we review the recent advancements in the synthesis of these materials spanning from metal halides, transition metal dichalcogenides, metal phosphosulphides, to ternary metal tellurides. We initially discuss the emerging device concepts based on magnetic van der Waals materials including what has been achieved with graphene. We then review the state of the art of the synthesis of these materials and we discuss the potential routes to achieve the synthesis of wafer-scale atomically thin magnetic materials. We discuss the synthetic achievements in relation to the structural characteristics of the materials and we scrutinise the physical properties of the precursors in relation to the synthesis conditions. We highlight the challenges related to the synthesis of 2D magnets and we provide a perspective for possible advancement of available synthesis methods to respond to the need for scalable production and high materials quality.
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Affiliation(s)
- Mauro Och
- Department of Materials, Imperial College London, SW72AZ London, UK.
| | - Marie-Blandine Martin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Bruno Dlubak
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Pierre Seneor
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cecilia Mattevi
- Department of Materials, Imperial College London, SW72AZ London, UK.
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38
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Guan R, Duan J, Yuan A, Wang Z, Yang S, Han L, Zhang B, Li D, Luo B. Chemical vapor deposition of clean and pure MoS 2 crystals by the inhibition of MoO 3−x intermediates. CrystEngComm 2021. [DOI: 10.1039/d0ce01354d] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A sublimated sulfur vapor versus evaporated MoO3 vapor with transition from low to high sulfur supersaturation would cause different CVD products transformed from MoS2–MoO3−x composites to clean and pure MoS2 crystals accordingly.
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Affiliation(s)
- Ran Guan
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Junxi Duan
- School of Physics
- Beijing Institute of Technology
- 100081 Beijing
- P. R. China
| | - Aiheng Yuan
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Zhuofan Wang
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Shuai Yang
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Luoqiao Han
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Bo Zhang
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Dejun Li
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
| | - Birong Luo
- College of Physics and Materials Science
- Tianjin Normal University
- 300387 Tianjin
- P. R. China
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39
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Cheng Z, He S, Han X, Wang M, Zhang S, Liu S, Liang G, Zhang S, Xia M. Interfaces determine the nucleation and growth of large NbS 2 single crystals. CrystEngComm 2021. [DOI: 10.1039/d0ce01393e] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The synthesis of large NbS2 single crystals benefits from Na–Nb–O droplet interfaces, which reduces nucleation density and increases growth rate.
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Affiliation(s)
- Zhaofang Cheng
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shaodan He
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Xiaona Han
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Min Wang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shimin Zhang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shiru Liu
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Gongying Liang
- Department of Material Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Shengli Zhang
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
| | - Minggang Xia
- Department of Applied Physics
- School of Physics
- Xi'an Jiaotong University
- People's Republic of China
- MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter
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40
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Gokul MA, Narayanan V, Rahman A. Modulating flow near substrate surface to grow clean and large-area monolayer MoS 2. NANOTECHNOLOGY 2020; 31:415706. [PMID: 32570232 DOI: 10.1088/1361-6528/ab9ed6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Chemical vapour deposition (CVD) is one of the most promising methods to synthesize monolayers of 2D materials like transition metal dichalcogenides (TMDs) over a large area with high film quality. Among many parameters that determine the growth of 2D materials, flow of precursor near the surface is one of the most sensitive conditions. In this study, we show how subtle changes in the flow near the substrate surface can affect the quality and coverage of the MoS2 monolayer. We fine tune the flow of the carrier gas near the substrate under two extreme conditions to grow large area and clean monolayer. In the first study, we grew several centimetres long continuous monolayer under the condition, which generally produces monolayers of few tens of micrometres in size without tuning the flow on the substrate surface. In the second case, we got monolayer MoS2 under the conditions meant for the formation of bulk MoS2.We achieved this by placing blockades on the substrate surface which helped in modifying the flow near them. Through simulation, we showed how the flow is affected near these blockades and used it as a guiding rule to grow patterned continuous MoS2 monolayers. Detailed electrical and optical measurements were done to determine the quality of the as-grown samples. Our studies provide a way to obtain clean, large area monolayer of desired pattern by tuning the flow of precursor on the vicinity of the substrate surface even when the growth conditions in CVD are far from optimum.
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Affiliation(s)
- M A Gokul
- Department of Physics, Indian Institute for Science Education and Research (IISER)-Pune, Dr. Homi Bhabha Road, Pune 411008, India
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Feng S, Tan J, Zhao S, Zhang S, Khan U, Tang L, Zou X, Lin J, Cheng HM, Liu B. Synthesis of Ultrahigh-Quality Monolayer Molybdenum Disulfide through In Situ Defect Healing with Thiol Molecules. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2020; 16:e2003357. [PMID: 32743967 DOI: 10.1002/smll.202003357] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2020] [Revised: 06/12/2020] [Indexed: 06/11/2023]
Abstract
Monolayer transition metal dichalcogenides are 2D materials with many potential applications. Chemical vapor deposition (CVD) is a promising method to synthesize these materials. However, CVD-grown materials generally have poorer quality than mechanically exfoliated ones and contain more defects due to the difficulties in controlling precursors' distribution and concentration during growth where solid precursors are used. Here, thiol is proposed to be used as a liquid precursor for CVD growth of high quality and uniform 2D MoS2 . Atomic-resolved structure characterizations indicate that the concentration of sulfur vacancies in the MoS2 grown from thiol is the lowest among all reported CVD samples. Low temperature spectroscopic characterization further reveals the ultrahigh optical quality of the grown MoS2 . Density functional theory simulations indicate that thiol molecules could interact with sulfur vacancies in MoS2 and repair these defects during the growth of MoS2 , resulting in high-quality MoS2 . This work provides a facile and controllable method for the growth of high-quality 2D materials with ultralow sulfur vacancies and high optical quality, which will benefit their optoelectronic applications.
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Affiliation(s)
- Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junyang Tan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shilong Zhao
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Shuqing Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Usman Khan
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
| | - Junhao Lin
- Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices, Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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Abstract
Grain boundaries (GBs) are a kind of lattice imperfection widely existing in two-dimensional materials, playing a critical role in materials' properties and device performance. Related key issues in this area have drawn much attention and are still under intense investigation. These issues include the characterization of GBs at different length scales, the dynamic formation of GBs during the synthesis, the manipulation of the configuration and density of GBs for specific material functionality, and the understanding of structure-property relationships and device applications. This review will provide a general introduction of progress in this field. Several techniques for characterizing GBs, such as direct imaging by high-resolution transmission electron microscopy, visualization techniques of GBs by optical microscopy, plasmon propagation, or second harmonic generation, are presented. To understand the dynamic formation process of GBs during the growth, a general geometric approach and theoretical consideration are reviewed. Moreover, strategies controlling the density of GBs for GB-free materials or materials with tunable GB patterns are summarized, and the effects of GBs on materials' properties are discussed. Finally, challenges and outlook are provided.
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Affiliation(s)
- Wenqian Yao
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing 100190, P.R. China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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43
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Pan B, Zhang K, Ding C, Wu Z, Fan Q, Luo T, Zhang L, Zou C, Huang S. Universal Precise Growth of 2D Transition-Metal Dichalcogenides in Vertical Direction. ACS APPLIED MATERIALS & INTERFACES 2020; 12:35337-35344. [PMID: 32648731 DOI: 10.1021/acsami.0c08335] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional transition-metal dichalcogenides (TMDs) have been one of the hottest focus of materials due to the most beneficial electronic and optoelectronic properties. Up to now, one of the big challenges is the synthesis of large-area layer-number-controlled single-crystal films. However, the poor understanding of the growth mechanism seriously hampers the progress of the scalable production of TMDs with precisely tunable thickness at an atomic scale. Here, the growth mechanisms in the vertical direction were systemically studied based on the density functional theory (DFT) calculation and an advanced chemical vapor deposition (CVD) growth. As a result, the U-type relation of the TMD layer number to the ratio of metal/chalcogenide is confirmed by the capability of ultrafine tuning of the experimental conditions in the CVD growth. In addition, high-quality uniform monolayer, bilayer, trilayer, and multilayer TMDs in a large area (8 cm2) were efficiently synthesized by applying this modified CVD. Although bilayer TMDs can be obtained at both high and low ratios of metal/chalcogenide based on the suggested mechanism, they demonstrate significantly different optical and electronic transport properties. The modified CVD strategy and the proposed mechanism should be helpful for synthesizing and large-area thickness-controlled TMDs and understanding their growth mechanism and could be used in integrated electronics and optoelectronics.
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Affiliation(s)
- Baojun Pan
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Kenan Zhang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
- State Key Laboratory of Infrared Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Changchun Ding
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Zhen Wu
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Qunchao Fan
- School of Science, Key Laboratory of High Performance Scientific Computation, Xihua University, Chengdu 610039, China
| | - Tingyan Luo
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Chao Zou
- Key Laboratory of Carbon Materials of Zhejiang Province, Institute of New Materials and Industrial Technologies, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035, China
| | - Shaoming Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, China
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44
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Park S, Yun SJ, Kim YI, Kim JH, Kim YM, Kim KK, Lee YH. Tailoring Domain Morphology in Monolayer NbSe 2 and W xNb 1-xSe 2 Heterostructure. ACS NANO 2020; 14:8784-8792. [PMID: 32539339 DOI: 10.1021/acsnano.0c03382] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Domain morphology plays a pivotal role not only for the synthesis of high-quality 2D transition metal dichalcogenides (TMDs) but also for the further unveiling of related physical and chemical properties, yet little has been divulged to date, especially for metallic TMDs. In addition, solid precursor as a transition metal source has been conventionally introduced for the synthesis of TMDs, which leads to an inhomogeneous distribution of local domains with the substrate position, making it difficult to obtain a reliable film. Here, we tailor the domain morphologies of metallic NbSe2 and NbSe2/WSe2 heterostructures using liquid-precursor chemical vapor deposition (CVD). We find that triangular, hexagonal, tripod-like, and herringbone-like NbSe2 flakes are constructed through control of growth temperature and promoter and precursor concentration. Liquid-precursor CVD ensures domain morphologies that are highly reproducible over repeated growth and uniform along the gas-flow direction. A domain coverage of ∼80% is achieved at a high precursor concentration, starting with tripod-like NbSe2 domain and evolving to the herringbone fractal. Furthermore, mixing liquid W and Nb precursors results in sea-urchin-like heterostructure domains with long-branch-shaped NbSe2 at low temperature, whereas protruded hexagonal heterostructure domains grow at high temperature. Our liquid precursor approach provides a shortcut for tailoring the domain morphologies of metallic TMDs as well as metal/semiconductor heterostructures.
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Affiliation(s)
- Sehwan Park
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jung Ho Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea
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45
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Huang L, Thi QH, Zheng F, Chen X, Chu YW, Lee CS, Zhao J, Ly TH. Catalyzed Kinetic Growth in Two-Dimensional MoS2. J Am Chem Soc 2020; 142:13130-13135. [DOI: 10.1021/jacs.0c05057] [Citation(s) in RCA: 23] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Affiliation(s)
- Lingli Huang
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Quoc Huy Thi
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
| | - Fangyuan Zheng
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, China
| | - Xin Chen
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Yee Wa Chu
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Chun-Sing Lee
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
| | - Jiong Zhao
- Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, China
- Shenzhen Research Institute, The Hong Kong Polytechnic University, Shenzhen, China
| | - Thuc Hue Ly
- Department of Chemistry and Center of Super-Diamond & Advanced Films (COSDAF), City University of Hong Kong, Kowloon, Hong Kong, China
- Shenzhen Research Institute, City University of Hong Kong, Shenzhen, China
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46
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Rotunno E, Bosi M, Seravalli L, Salviati G, Fabbri F. Influence of organic promoter gradient on the MoS 2 growth dynamics. NANOSCALE ADVANCES 2020; 2:2352-2362. [PMID: 36133371 PMCID: PMC9418129 DOI: 10.1039/d0na00147c] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2020] [Accepted: 04/11/2020] [Indexed: 06/10/2023]
Abstract
Chemical vapor deposition has been demonstrated to be the most efficient, versatile and reliable technique for the synthesis of monolayers of transition metal dichalcogenides. The use of organic promoters during the growth process was a turning point in order to increase the monolayer lateral size or to obtain complete coverage of the growth substrate. In this work we clarify the influence of the promoter gradient on the growth dynamics of MoS2. In particular, we place a sacrificial substrate covered with a promoter (a low sublimation-temperature perylene-based compound) downstream with respect to the growth substrate in order to maximize its gradient on the growth substrate through upstream diffusion. We demonstrate that the morphology and the number of layers of MoS2 are drastically affected by the distance of the growth substrate from the promoter sacrificial substrate. The farthermost area from the promoter substrate presents micrometric MoS2 triangular monolayers and large low hierarchy dendritic multi-layer structures. On the contrary the closest area reveals an almost continuous polycrystalline MoS2 monolayer, with bilayer terraces, with a lateral dimension up to hundreds of micrometers.
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Affiliation(s)
- E Rotunno
- Istituto Nanoscienze-CNR via G Campi 213/a 41125 Modena Italy
| | - M Bosi
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - L Seravalli
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - G Salviati
- IMEM-CNR Area delle Scienze 37A 43124 Parma Italy
| | - F Fabbri
- NEST, Istituto Nanoscienze - CNR, Scuola Normale Superiore Piazza San Silvestro 12 56127 Pisa Italy
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47
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Graham C, Frances MMM, Maniyara RA, Wen Y, Mazumder P, Pruneri V. NaCl substrates for high temperature processing and transfer of ultrathin materials. Sci Rep 2020; 10:7253. [PMID: 32350348 PMCID: PMC7190726 DOI: 10.1038/s41598-020-64313-9] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2019] [Accepted: 03/14/2020] [Indexed: 11/09/2022] Open
Abstract
Ultrathin materials often require high temperatures for growth and processing, which cannot be withstood by the substrate underneath. For example, polymers are widely used as a supporting layer but unfortunately have low strain-point temperatures. This is the case of polyethylene terephthalate (PET) which has glass transition and melting temperatures of 76 and 250 °C, respectively. In this paper we propose to use polished salt, a material that can withstand high temperatures during fabrication and, at the same time, can be sacrificed during the transfer onto the final substrates. More specifically, we demonstrate thermal dewetting of Au ultrathin metal films and growth of MoS2 on NaCl at 750 and 650 °C, respectively, and subsequent transfer onto PET films, after which the salt is easily dissolved by water. We believe that the proposed technique can be extended to fabrication of other ultrathin materials, e.g. graphene, as well as final substrates for a wide range of applications, including flexible electronic and optoelectronic devices.
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Affiliation(s)
- Christina Graham
- ICFO- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Miriam Marchena Martin Frances
- ICFO- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Rinu Abraham Maniyara
- ICFO- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Yugeng Wen
- ICFO- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Prantik Mazumder
- Corning Research and Development Corporation, Sullivan Park, Corning, New York, NY, 14831, United States of America
| | - Valerio Pruneri
- ICFO- Institut de Ciències Fotòniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain. .,ICREA- Institució Catalana de Recerca i Estudis Avançats, 08010, Barcelona, Spain.
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48
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Tang L, Li T, Luo Y, Feng S, Cai Z, Zhang H, Liu B, Cheng HM. Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides. ACS NANO 2020; 14:4646-4653. [PMID: 32299213 DOI: 10.1021/acsnano.0c00296] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in controlling concentrations of solid precursors and spatially nonuniform growth dynamics, it is challenging to grow 2D TMDCs over large areas with good uniformity and reproducibility so far, which significantly hinders their practical use. Here we report a vertical chemical vapor deposition (VCVD) design with gaseous precursors to grow monolayer TMDCs with a uniform density and high quality over the whole substrate and with excellent reproducibility. Such a gaseous VCVD design can well control the three key parameters in TMDC growth, including precursor concentration, gas flow, and temperature, which cannot be done in a currently widely used horizontal CVD system with solid precursors. Statistical results show that VCVD-grown monolayer TMDCs including MoS2 and WS2 are of high uniformity and quality on substrates over centimeter size. We also fabricated multiple van der Waals heterostructures by one-step transfer of VCVD-grown TMDCs, owning to their good uniformity. This work sheds light on the growth of 2D materials with high uniformity on a large-area substrate, which can be used for the wafer-scale fabrication of 2D materials and their heterostructures.
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Affiliation(s)
- Lei Tang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Tao Li
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Yuting Luo
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Simin Feng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Zhengyang Cai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hang Zhang
- Institute of Engineering Thermophysics, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, Guangdong 518055, P. R. China
- Shenyang National Laboratory for Materials Sciences, Institute of Metal Research, Chinese Academy of Sciences, Shenyang, Liaoning 110016, P. R. China
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49
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Yu J, Wang L, Hao Z, Luo Y, Sun C, Wang J, Han Y, Xiong B, Li H. Van der Waals Epitaxy of III-Nitride Semiconductors Based on 2D Materials for Flexible Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1903407. [PMID: 31486182 DOI: 10.1002/adma.201903407] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2019] [Revised: 07/07/2019] [Indexed: 06/10/2023]
Abstract
III-nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever-increasing demand for wearable and foldable applications. On the other hand, sp2 -bonded two-dimensional (2D) materials, which exhibit hexagonal in-plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III-nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III-nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III-nitride devices are discussed.
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Affiliation(s)
- Jiadong Yu
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Lai Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Zhibiao Hao
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yi Luo
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Changzheng Sun
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Jian Wang
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Yanjun Han
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Flexible Intelligent Optoelectronic Device and Technology Center, Institute of Flexible Electronics Technology of THU, Zhejiang, Jiaxing, 314006, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Bing Xiong
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
- Center for Flexible Electronics Technology, Tsinghua University, Beijing, 100084, China
| | - Hongtao Li
- Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing, 100084, China
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50
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Liu H, Qi G, Tang C, Chen M, Chen Y, Shu Z, Xiang H, Jin Y, Wang S, Li H, Ouzounian M, Hu TS, Duan H, Li S, Han Z, Liu S. Growth of Large-Area Homogeneous Monolayer Transition-Metal Disulfides via a Molten Liquid Intermediate Process. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13174-13181. [PMID: 32103663 DOI: 10.1021/acsami.9b22397] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Growth of large-area, uniform, and high-quality monolayer transition-metal dichalcogenides (TMDs) for practical and industrial applications remains a long-standing challenge. The present study demonstrates a modified predeposited chemical vapor deposition (CVD) process by employing an annealing procedure before sulfurization, which helps in achieving large-area, highly uniform, and high-quality TMDs on various substrates. The annealing procedure resulted in a molten liquid state of the precursors in the CVD process, which not only facilitated a uniform redistribution of the precursor on the substrate (avoid the aggregation) because of the uniform redistribution of the liquid precursor on the substrate but more importantly avoided the undesired multilayer growth via the self-limited lateral supply precursors mechanism. A 2 in. uniform and continuous monolayer WS2 film has been synthesized on the SiO2/Si substrate. Moreover, uniform monolayer WS2 single crystals can be prepared on more general and various substrates including sapphire, mica, quartz, and Si3N4 using the same growth procedure. Besides, this growth mechanism can be generalized to synthesize other monolayer TMDs such as MoS2 and MoS2/WS2 heterostructures. Hence, the present method provides a generalized attractive strategy to grow large-area, uniform, single-layer two-dimensional (2D) materials. This study has significant implications in the advancement of batch production of various 2D-material-based devices for industrial and commercial applications.
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Affiliation(s)
- Hang Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Guopeng Qi
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Caisheng Tang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Maolin Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China
| | - Yang Chen
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zhiwen Shu
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haiyan Xiang
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Yuanyuan Jin
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Shanshan Wang
- Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073, P. R. China
| | - Huimin Li
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
| | - Miray Ouzounian
- Department of Mechanical Engineering, California State University, Los Angeles, California 90032, United States
| | - Travis Shihao Hu
- Department of Mechanical Engineering, California State University, Los Angeles, California 90032, United States
| | - Huigao Duan
- State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China
| | - Shisheng Li
- International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
| | - Zheng Han
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Science, Shenyang 110016, P. R. China
| | - Song Liu
- Institute of Chemical Biology and Nanomedicine (ICBN), State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha 410082, P. R. China
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