1
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Kim YU, Cho WJ. Enhanced BSA Detection Precision: Leveraging High-Performance Dual-Gate Ion-Sensitive Field-Effect-Transistor Scheme and Surface-Treated Sensing Membranes. BIOSENSORS 2024; 14:141. [PMID: 38534248 DOI: 10.3390/bios14030141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2024] [Revised: 03/11/2024] [Accepted: 03/11/2024] [Indexed: 03/28/2024]
Abstract
Bovine serum albumin (BSA) is commonly incorporated in vaccines to improve stability. However, owing to potential allergic reactions in humans, the World Health Organization (WHO) mandates strict adherence to a BSA limit (≤50 ng/vaccine). BSA detection with conventional techniques is time-consuming and requires specialized equipment. Efficient alternatives such as the ion-sensitive field-effect transistor (ISFET), despite rapid detection, affordability, and portability, do not detect BSA at low concentrations because of inherent sensitivity limitations. This study proposes a silicon-on-insulator (SOI) substrate-based dual-gate (DG) ISFET platform to overcome these limitations. The capacitive coupling DG structure significantly enhances sensitivity without requiring external circuits, owing to its inherent amplification effect. The extended-gate (EG) structure separates the transducer unit for electrical signal processing from the sensing unit for biological detection, preventing chemical damage to the transducer, accommodating a variety of biological analytes, and affording easy replaceability. Vapor-phase surface treatment with (3-Aminopropyl) triethoxysilane (APTES) and the incorporation of a SnO2 sensing membrane ensure high BSA detection efficiency and sensitivity (144.19 mV/log [BSA]). This DG-FET-based biosensor possesses a simple structure and detects BSA at low concentrations rapidly. Envisioned as an effective on-site diagnostic tool for various analytes including BSA, this platform addresses prior limitations in biosensing and shows promise for practical applications.
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Affiliation(s)
- Yeong-Ung Kim
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Gwangun-ro 20, Nowon-gu, Seoul 01897, Republic of Korea
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2
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Hyun TH, Cho WJ. High-Performance FET-Based Dopamine-Sensitive Biosensor Platform Based on SOI Substrate. BIOSENSORS 2023; 13:bios13050516. [PMID: 37232877 DOI: 10.3390/bios13050516] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 04/28/2023] [Accepted: 05/02/2023] [Indexed: 05/27/2023]
Abstract
Dopamine is a catecholamine neurotransmitter that plays a significant role in the human central nervous system, even at extremely low concentrations. Several studies have focused on rapid and accurate detection of dopamine levels using field-effect transistor (FET)-based sensors. However, conventional approaches have poor dopamine sensitivity with values <11 mV/log [DA]. Hence, it is necessary to increase the sensitivity of FET-based dopamine sensors. In the present study, we proposed a high-performance dopamine-sensitive biosensor platform based on dual-gate FET on a silicon-on-insulator substrate. This proposed biosensor overcame the limitations of conventional approaches. The biosensor platform consisted of a dual-gate FET transducer unit and a dopamine-sensitive extended gate sensing unit. The capacitive coupling between the top- and bottom-gate of the transducer unit allowed for self-amplification of the dopamine sensitivity, resulting in an increased sensitivity of 373.98 mV/log[DA] from concentrations 10 fM to 1 μM. Therefore, the proposed FET-based dopamine sensor is expected to be widely applied as a highly sensitive and reliable biosensor platform, enabling fast and accurate detection of dopamine levels in various applications such as medical diagnosis and drug development.
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Affiliation(s)
- Tae-Hwan Hyun
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Republic of Korea
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3
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Hui Y, Huang Z, Alahi MEE, Nag A, Feng S, Mukhopadhyay SC. Recent Advancements in Electrochemical Biosensors for Monitoring the Water Quality. BIOSENSORS 2022; 12:bios12070551. [PMID: 35884353 PMCID: PMC9313366 DOI: 10.3390/bios12070551] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2022] [Revised: 07/10/2022] [Accepted: 07/13/2022] [Indexed: 05/06/2023]
Abstract
The release of chemicals and microorganisms from various sources, such as industry, agriculture, animal farming, wastewater treatment plants, and flooding, into water systems have caused water pollution in several parts of our world, endangering aquatic ecosystems and individual health. World Health Organization (WHO) has introduced strict standards for the maximum concentration limits for nutrients and chemicals in drinking water, surface water, and groundwater. It is crucial to have rapid, sensitive, and reliable analytical detection systems to monitor the pollution level regularly and meet the standard limit. Electrochemical biosensors are advantageous analytical devices or tools that convert a bio-signal by biorecognition elements into a significant electrical response. Thanks to the micro/nano fabrication techniques, electrochemical biosensors for sensitive, continuous, and real-time detection have attracted increasing attention among researchers and users worldwide. These devices take advantage of easy operation, portability, and rapid response. They can also be miniaturized, have a long-life span and a quick response time, and possess high sensitivity and selectivity and can be considered as portable biosensing assays. They are of special importance due to their great advantages such as affordability, simplicity, portability, and ability to detect at on-site. This review paper is concerned with the basic concepts of electrochemical biosensors and their applications in various water quality monitoring, such as inorganic chemicals, nutrients, microorganisms' pollution, and organic pollutants, especially for developing real-time/online detection systems. The basic concepts of electrochemical biosensors, different surface modification techniques, bio-recognition elements (BRE), detection methods, and specific real-time water quality monitoring applications are reviewed thoroughly in this article.
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Affiliation(s)
- Yun Hui
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China;
| | - Zhaoling Huang
- School of Mechanical and Electrical Engineering, Guilin University of Electronic Technology, Guilin 541004, China;
| | - Md Eshrat E. Alahi
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China;
- Correspondence: (M.E.E.A.); (S.F.)
| | - Anindya Nag
- Faculty of Electrical and Computer Engineering, Technische Universität Dresden, 01062 Dresden, Germany;
- Centre for Tactile Internet with Human-in-the-Loop (CeTI), Technische Universität Dresden, 01069 Dresden, Germany
| | - Shilun Feng
- State Key Laboratory of Transducer Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
- Correspondence: (M.E.E.A.); (S.F.)
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4
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Han JK, Park SC, Yu JM, Ahn JH, Choi YK. A Bioinspired Artificial Gustatory Neuron for a Neuromorphic Based Electronic Tongue. NANO LETTERS 2022; 22:5244-5251. [PMID: 35737524 DOI: 10.1021/acs.nanolett.2c01107] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
A novel biomimicked neuromorphic sensor for an energy efficient and highly scalable electronic tongue (E-tongue) is demonstrated with a metal-oxide-semiconductor field-effect transistor (MOSFET). By mimicking a biological gustatory neuron, the proposed E-tongue can simultaneously detect ion concentrations of chemicals on an extended gate and encode spike signals on the MOSFET, which acts as an input neuron in a spiking neural network (SNN). Such in-sensor neuromorphic functioning can reduce the energy and area consumption of the conventional E-tongue hardware. pH-sensitive and sodium-sensitive artificial gustatory neurons are implemented by using two different sensing materials: Al2O3 for pH sensing and sodium ionophore X for sodium ion sensing. In addition, a sensitivity control function inspired by the biological sensory neuron is demonstrated. After the unit device characterization of the artificial gustatory neuron, a fully hardware-based E-tongue that can classify two distinct liquids is demonstrated to show a practical application of the artificial gustatory neurons.
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Affiliation(s)
- Joon-Kyu Han
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang-Chan Park
- Department of Electronics Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Ji-Man Yu
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jae-Hyuk Ahn
- Department of Electronics Engineering, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Yang-Kyu Choi
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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5
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Hu Q, Chen S, Solomon P, Zhang Z. Ion sensing with single charge resolution using sub-10-nm electrical double layer-gated silicon nanowire transistors. SCIENCE ADVANCES 2021; 7:eabj6711. [PMID: 34860555 PMCID: PMC8641926 DOI: 10.1126/sciadv.abj6711] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2021] [Accepted: 10/14/2021] [Indexed: 05/28/2023]
Abstract
Electrical sensors have been widely explored for the analysis of chemical/biological species. Ion detection with single charge resolution is the ultimate sensitivity goal of such sensors, which is yet to be experimentally demonstrated. Here, the events of capturing and emitting a single hydrogen ion (H+) at the solid/liquid interface are directly detected using sub–10-nm electrical double layer–gated silicon nanowire field-effect transistors (SiNWFETs). The SiNWFETs are fabricated using a complementary metal-oxide-semiconductor compatible process, with a surface reassembling step to minimize the device noise. An individually activated surface Si dangling bond (DB) acts as the single H+ receptor. Discrete current signals, generated by the single H+-DB interactions via local Coulomb scattering, are directly detected by the SiNWFETs. The single H+-DB interaction kinetics is systematically investigated. Our SiNWFETs demonstrate unprecedented capability for electrical sensing applications, especially for investigating the physics of solid/liquid interfacial interactions at the single charge level.
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Affiliation(s)
- Qitao Hu
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, BOX 65, SE-75103 Uppsala, Sweden
| | - Si Chen
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, BOX 65, SE-75103 Uppsala, Sweden
| | - Paul Solomon
- IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598, USA
| | - Zhen Zhang
- Division of Solid State Electronics, Department of Electrical Engineering, Uppsala University, BOX 65, SE-75103 Uppsala, Sweden
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6
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Rao T, Li J, Cai W, Wu M, Jiang J, Yang P, Zhou Y, Liao W. Fabrication of a Mesoporous Multimetallic Oxide-based Ion-Sensitive Field Effect Transistor for pH Sensing. ACS OMEGA 2021; 6:32297-32303. [PMID: 34870050 PMCID: PMC8638296 DOI: 10.1021/acsomega.1c05469] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2021] [Accepted: 11/09/2021] [Indexed: 05/05/2023]
Abstract
Sensitive and reliable noninvasive sensors are in demand to cope with an increasing need for robust working conditions and fast results. One of the leading potential technologies is field-effect transistor (FET)-based sensors to improve response time, sensitivity, and stability. Here, a sol-gel method fabricates an ion-sensitive field-effect transistor with a high current and output sensitivity for electrochemical sensing, solving binary device design, component regulating, and long-term stability, while maintaining the promoted sensitivity. Metal oxide-based devices with single and binary contents are fabricated and characterized for monitoring pH changes, with performance fitted to a Nernst-Poisson model. After detecting the performance, the result was compared with devices in different components and ratios to obtain excellent performance and high stability. In addition, these extended gate FETs with multimetallic oxide promise efficiency and stability optimization in terms of a flexible component design, demonstrating the feasibility of the novel sol-gel fabrication method to achieve efficient and reliable FET sensors.
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Affiliation(s)
- Tingke Rao
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jialin Li
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Wen Cai
- Institute
of Medical Engineering, Department of Biophysics,
School of Basic Medical Sciences, Health Science Center, Xi’an
Jiaotong University, Xi’an, Shaanxi 710061, China
| | - Min Wu
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jie Jiang
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Peng Yang
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yuanliang Zhou
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
| | - Wugang Liao
- College
of Electronic and Information Engineering, Shenzhen University, Shenzhen 518060, China
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7
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Hasan N, Kansakar U, Sherer E, DeCoster MA, Radadia AD. Ion-Selective Membrane-Coated Graphene-Hexagonal Boron Nitride Heterostructures for Field-Effect Ion Sensing. ACS OMEGA 2021; 6:30281-30291. [PMID: 34805660 PMCID: PMC8600519 DOI: 10.1021/acsomega.1c02222] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Accepted: 10/12/2021] [Indexed: 06/13/2023]
Abstract
An intrinsic ion sensitivity exceeding the Nernst-Boltzmann limit and an sp 2 -hybridized carbon structure make graphene a promising channel material for realizing ion-sensitive field-effect transistors with a stable solid-liquid interface under biased conditions in buffered salt solutions. Here, we examine the performance of graphene field-effect transistors coated with ion-selective membranes as a tool to selectively detect changes in concentrations of Ca2+, K+, and Na+ in individual salt solutions as well as in buffered Locke's solution. Both the shift in the Dirac point and transconductance could be measured as a function of ion concentration with repeatability exceeding 99.5% and reproducibility exceeding 98% over 60 days. However, an enhancement of selectivity, by about an order magnitude or more, was observed using transconductance as the indicator when compared to Dirac voltage, which is the only factor reported to date. Fabricating a hexagonal boron nitride multilayer between graphene and oxide further increased the ion sensitivity and selectivity of transconductance. These findings incite investigating ion sensitivity of transconductance in alternative architectures as well as urge the exploration of graphene transistor arrays for biomedical applications.
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Affiliation(s)
- Nowzesh Hasan
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Urna Kansakar
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Eric Sherer
- Chemical
Engineering, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Mark A. DeCoster
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
| | - Adarsh D. Radadia
- Institute
for Micromanufacturing, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Center
for Biomedical Engineering and Rehabilitation Sciences, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
- Chemical
Engineering, Louisiana Tech University, 911 Hergot Avenue, Ruston, Louisiana 71272, United States
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8
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Sinha S, Pal T. A comprehensive review of FET‐based pH sensors: materials, fabrication technologies, and modeling. ELECTROCHEMICAL SCIENCE ADVANCES 2021. [DOI: 10.1002/elsa.202100147] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022] Open
Affiliation(s)
- Soumendu Sinha
- CSIR – Central Electronics Engineering Research Institute (CEERI) Pilani Rajasthan India
- Academy of Scientific and Innovative Research (AcSIR) Ghaziabad Uttar Pradesh India
| | - Tapas Pal
- CSIR – Central Electronics Engineering Research Institute (CEERI) Pilani Rajasthan India
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9
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Liang T, Jiang N, Zhou S, Wang X, Xu Y, Wu C, Kirsanov D, Legin A, Wan H, Wang P. Multiplexed all-solid-state ion-sensitive light-addressable potentiometric sensor (ISLAPS) system based on silicone-rubber for physiological ions detection. Anal Chim Acta 2021; 1179:338603. [PMID: 34535249 DOI: 10.1016/j.aca.2021.338603] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/07/2021] [Revised: 04/14/2021] [Accepted: 04/30/2021] [Indexed: 10/21/2022]
Abstract
Light-addressable potentiometric sensor (LAPS) has been widely used in biomedical applications since its advent. As a member of the potentiometric sensors, ion-sensitive LAPS (ISLAPS) can be obtained by modifying ion selective sensing membrane on the sensor surface. Compared with the conventional ion-selective electrodes (ISEs) with liquid contact, the all-solid-state ISEs have more advantages such as easy maintenance, more convenient for miniaturization and practical applications. However, the commonly used ion-sensitive membrane (ISM) matrix like PVC has many limitations such as poor adhesion to silicone-based sensor and easy overflow of the plasticizer from the membrane. In this work, LAPS was combined with a variety of ionophore-doped all-solid-state silicone-rubber ISMs for the first time, to establish a program-controlled multiplexed ISLAPS system for physiological ions (Na+, K+, Ca2+ and H+) detection. The silicone-rubber ISMs have better adhesion to silicon-based sensors without containing plasticizers, which can avoid the plasticizer pollution and improve the long-term stability. A layer of poly(3-octylthiophene-2,5-diyl) (P3OT) was pre-modified on the sensor surface to inhibit the formation of an aqueous layer and improve the sensor lifetime. With the aid of a translation stage, the light spot automatically illuminated the detection sites in sequence, and the response of the four ions could be obtained in one measurement within 1 min. The proposed multiplexed ISLAPS has good sensitivity with micromolar limit of detection (LOD), good selectivity and long-term stability (more than 3 months). The results of the real Dulbecco's Modified Eagle Medium (DMEM) sample detection proved that the ISLAPS system can be used for the physiological ions detection, and is promising to realize a multi-parameter microphysiometer.
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Affiliation(s)
- Tao Liang
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Nan Jiang
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Shuqi Zhou
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Xinyi Wang
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Yingke Xu
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China
| | - Chunsheng Wu
- Institute of Medical Engineering, School of Basic Medical Sciences, Xi'an Jiaotong University, Xi'an, 710061, China
| | - Dmitry Kirsanov
- Institute of Chemistry, Mendeleev Center, St. Petersburg State University, St. Petersburg, 199034, Russia
| | - Andrey Legin
- Institute of Chemistry, Mendeleev Center, St. Petersburg State University, St. Petersburg, 199034, Russia
| | - Hao Wan
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China.
| | - Ping Wang
- Biosensor National Special Laboratory, Key Laboratory for Biomedical Engineering of Ministry of Education, Department of Biomedical Engineering, Zhejiang University, Hangzhou, 310027, China.
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10
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Highly Sensitive and Selective Sodium Ion Sensor Based on Silicon Nanowire Dual Gate Field-Effect Transistor. SENSORS 2021; 21:s21124213. [PMID: 34205380 PMCID: PMC8235453 DOI: 10.3390/s21124213] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/14/2021] [Revised: 06/16/2021] [Accepted: 06/17/2021] [Indexed: 11/25/2022]
Abstract
In this study, a highly sensitive and selective sodium ion sensor consisting of a dual-gate (DG) structured silicon nanowire (SiNW) field-effect transistor (FET) as the transducer and a sodium-selective membrane extended gate (EG) as the sensing unit was developed. The SiNW channel DG FET was fabricated through the dry etching of the silicon-on-insulator substrate by using electrospun polyvinylpyrrolidone nanofibers as a template for the SiNW pattern transfer. The selectivity and sensitivity of sodium to other ions were verified by constructing a sodium ion sensor, wherein the EG was electrically connected to the SiNW channel DG FET with a sodium-selective membrane. An extremely high sensitivity of 1464.66 mV/dec was obtained for a NaCl solution. The low sensitivities of the SiNW channel FET-based sodium ion sensor to CaCl2, KCl, and pH buffer solutions demonstrated its excellent selectivity. The reliability and stability of the sodium ion sensor were verified under non-ideal behaviors by analyzing the hysteresis and drift. Therefore, the SiNW channel DG FET-based sodium ion sensor, which comprises a sodium-selective membrane EG, can be applied to accurately detect sodium ions in the analyses of sweat or blood.
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11
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Kim JH, Park SJ, Han JW, Ahn JH. Surface Potential-Controlled Oscillation in FET-Based Biosensors. SENSORS 2021; 21:s21061939. [PMID: 33801968 PMCID: PMC8061884 DOI: 10.3390/s21061939] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/10/2021] [Revised: 03/05/2021] [Accepted: 03/05/2021] [Indexed: 12/21/2022]
Abstract
Field-effect transistor (FET)-based biosensors have garnered significant attention for their label-free electrical detection of charged biomolecules. Whereas conventional output parameters such as threshold voltage and channel current have been widely used for the detection and quantitation of analytes of interest, they require bulky instruments and specialized readout circuits, which often limit point-of-care testing applications. In this study, we demonstrate a simple conversion method that transforms the surface potential into an oscillating signal as an output of the FET-based biosensor. The oscillation frequency is proposed as a parameter for FET-based biosensors owing to its intrinsic advantages of simple and compact implementation of readout circuits as well as high compatibility with neuromorphic applications. An extended-gate biosensor comprising an Al2O3-deposited sensing electrode and a readout transistor is connected to a ring oscillator that generates surface potential-controlled oscillation for pH sensing. Electrical measurement of the oscillation frequency as a function of pH reveals that the oscillation frequency can be used as a sensitive and reliable output parameter in FET-based biosensors for the detection of chemical and biological species. We confirmed that the oscillation frequency is directly correlated with the threshold voltage. For signal amplification, the effects of circuit parameters on pH sensitivity are investigated using different methods, including electrical measurements, analytical calculations, and circuit simulations. An Arduino board to measure the oscillation frequency is integrated with the proposed sensor to enable portable and real-time pH measurement for point-of-care testing applications.
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Affiliation(s)
- Ji Hyun Kim
- Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Korea; (J.H.K.); (S.J.P.)
| | - Seong Jun Park
- Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Korea; (J.H.K.); (S.J.P.)
| | - Jin-Woo Han
- Center for Nanotechnology, NASA Ames Research Center, Mountain View, CA 94035, USA;
| | - Jae-Hyuk Ahn
- Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Korea
- Correspondence:
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12
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Combining Chemical Functionalization and FinFET Geometry for Field Effect Sensors as Accessible Technology to Optimize pH Sensing. CHEMOSENSORS 2021. [DOI: 10.3390/chemosensors9020020] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Field Effect Transistors (FETs) have led the progress of applications measuring the acidity in aqueous solutions thanks to their accuracy, ease of miniaturization and capacity of multiplexing. The signal-to-noise ratio and linearity of the sensors are two of the most relevant figures of merit that can facilitate the improvements of these devices. In this work we present the functionalization with aminopropyltriethoxysilane (APTES) of a promising new FET design consisting of a high height-to-width aspect ratio with an efficient 2D gating architecture that improves both factors. We measured the transistor transfer and output characteristics before and after APTES functionalization, obtaining an improved sensitivity and linearity in both responses. We also compared the experimental results with a site-biding model of the surface buffering capacity of the APTES functionalized layers.
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13
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Rosales SA, González F, Moreno F, Gutiérrez Y. Non-Absorbing Dielectric Materials for Surface-Enhanced Spectroscopies and Chiral Sensing in the UV. NANOMATERIALS (BASEL, SWITZERLAND) 2020; 10:E2078. [PMID: 33096710 PMCID: PMC7589615 DOI: 10.3390/nano10102078] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/11/2020] [Revised: 10/10/2020] [Accepted: 10/15/2020] [Indexed: 11/17/2022]
Abstract
Low-loss dielectric nanomaterials are being extensively studied as novel platforms for enhanced light-matter interactions. Dielectric materials are more versatile than metals when nanostructured as they are able to generate simultaneously electric- and magnetic-type resonances. This unique property gives rise to a wide gamut of new phenomena not observed in metal nanostructures such as directional scattering conditions or enhanced optical chirality density. Traditionally studied dielectrics such as Si, Ge or GaP have an operating range constrained to the infrared and/or the visible range. Tuning their resonances up to the UV, where many biological samples of interest exhibit their absorption bands, is not possible due to their increased optical losses via heat generation. Herein, we report a quantitative survey on the UV optical performance of 20 different dielectric nanostructured materials for UV surface light-matter interaction based applications. The near-field intensity and optical chirality density averaged over the surface of the nanoparticles together with the heat generation are studied as figures of merit for this comparative analysis.
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Affiliation(s)
- Saúl A. Rosales
- Department of Applied Physics, University of Cantabria, Avda. Los Castros, s/n., 39005 Santander, Spain; (S.A.R.); (F.G.)
| | - Francisco González
- Department of Applied Physics, University of Cantabria, Avda. Los Castros, s/n., 39005 Santander, Spain; (S.A.R.); (F.G.)
| | - Fernando Moreno
- Department of Applied Physics, University of Cantabria, Avda. Los Castros, s/n., 39005 Santander, Spain; (S.A.R.); (F.G.)
| | - Yael Gutiérrez
- Institute of Nanotechnology, CNR-NANOTEC, Via Orabona 4, 70126 Bari, Italy
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14
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Kutovyi Y, Hlukhova H, Boichuk N, Menger M, Offenhäusser A, Vitusevich S. Amyloid-beta peptide detection via aptamer-functionalized nanowire sensors exploiting single-trap phenomena. Biosens Bioelectron 2020; 154:112053. [DOI: 10.1016/j.bios.2020.112053] [Citation(s) in RCA: 29] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/25/2019] [Revised: 01/23/2020] [Accepted: 01/24/2020] [Indexed: 12/12/2022]
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15
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Kwon J, Lee Y, Lee T, Ahn JH. Aptamer-Based Field-Effect Transistor for Detection of Avian Influenza Virus in Chicken Serum. Anal Chem 2020; 92:5524-5531. [PMID: 32148026 DOI: 10.1021/acs.analchem.0c00348] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
Early diagnosis of the highly pathogenic H5N1 avian influenza virus (AIV) is significant for preventing and controlling a global pandemic. However, there is no existing electrical biosensor for detecting biomarkers for AIV in clinically relevant samples such as chicken serum. Herein, we report the first use of an aptamer-functionalized field-effect transistor (FET) as a label-free sensor for AIV detection in chicken serum. A DNA aptamer is employed as a sensitive and selective receptor for hemagglutinin (HA) protein, which is a biomarker for AIVs. This aptamer is immobilized on a gold microelectrode that is connected to the gate of a reusable FET transducer. The specific binding of the target protein results in a change in the surface potential, which generates a signal response of the FET transducer. We hypothesize that a conformational change in the DNA aptamer upon specific binding of HA protein may alter the surface potential. The signal of the aptamer-based FET biosensor increased linearly with the increase in the logarithm of HA protein concentration in a dynamic range of 10 pM to 10 nM with a detection limit of 5.9 pM. The selectivity of the biosensor for HA protein was confirmed by employing relevant interfering proteins. The proposed biosensor was successfully applied to the selective detection of HA protein in a chicken serum sample. Owing to its simple and low-cost architecture, portability, and sensitivity, the aptamer-based FET biosensor has potential as a point-of-care diagnosis of H5N1 AIVs in clinical samples.
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16
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Chen S, Dong H, Yang J. Surface Potential/Charge Sensing Techniques and Applications. SENSORS (BASEL, SWITZERLAND) 2020; 20:E1690. [PMID: 32197397 PMCID: PMC7146636 DOI: 10.3390/s20061690] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/05/2020] [Revised: 03/05/2020] [Accepted: 03/15/2020] [Indexed: 12/21/2022]
Abstract
Surface potential and surface charge sensing techniques have attracted a wide range of research interest in recent decades. With the development and optimization of detection technologies, especially nanosensors, new mechanisms and techniques are emerging. This review discusses various surface potential sensing techniques, including Kelvin probe force microscopy and chemical field-effect transistor sensors for surface potential sensing, nanopore sensors for surface charge sensing, zeta potentiometer and optical detection technologies for zeta potential detection, for applications in material property, metal ion and molecule studies. The mechanisms and optimization methods for each method are discussed and summarized, with the aim of providing a comprehensive overview of different techniques and experimental guidance for applications in surface potential-based detection.
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Affiliation(s)
- Songyue Chen
- Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China; (H.D.); (J.Y.)
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17
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Chen S, Chen H, Zhang J, Dong H, Zhan K, Tang Y. A glass nanopore ionic sensor for surface charge analysis. RSC Adv 2020; 10:21615-21620. [PMID: 35518750 PMCID: PMC9054376 DOI: 10.1039/d0ra03353g] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/15/2020] [Accepted: 05/19/2020] [Indexed: 01/11/2023] Open
Abstract
Surface charge-based nanopore characterization techniques unfold unique properties and provide a powerful platform for a variety of sensing applications. In this paper, we have proposed a nanoconfined inner wall surface charge characterization method with glass nanopores. The glass nanopores were functionalized with DNA aptamers that were designed for mercury (Hg2+) ion immobilization by forming thymine–Hg2+–thymine structures. The surface charge of the nanopores was modulated by surface chemistry and Hg2+ ion concentrations and analysed by combining zeta potential measurements on glass slides and the ionic current rectification ratio of the nanopores. Also, 1 pM Hg2+ ions could be detected by the nanopores. Surface charge-based nanopore characterization techniques unfold unique properties and provide a powerful platform for a variety of sensing applications.![]()
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Affiliation(s)
- Songyue Chen
- Department of Mechanical and Electrical Engineering
- Xiamen University
- Xiamen 361005
- China
| | - Hong Chen
- Pen-Tung Sah Institute of Micro-Nano Science and Technology
- Xiamen University
- Xiamen 361005
- China
| | - Jian Zhang
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
- China
| | - Hepeng Dong
- Department of Mechanical and Electrical Engineering
- Xiamen University
- Xiamen 361005
- China
| | - Kan Zhan
- College of Chemistry and Chemical Engineering
- Xiamen University
- Xiamen 361005
- China
| | - Yongliang Tang
- Department of Mechanical and Electrical Engineering
- Xiamen University
- Xiamen 361005
- China
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18
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Kwon J, Lee BH, Kim SY, Park JY, Bae H, Choi YK, Ahn JH. Nanoscale FET-Based Transduction toward Sensitive Extended-Gate Biosensors. ACS Sens 2019; 4:1724-1729. [PMID: 31199112 DOI: 10.1021/acssensors.9b00731] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
Owing to their simple and low-cost architecture, extended-gate biosensors based on the combination of a disposable sensing part and a reusable transducer have been widely utilized for the label-free electrical detection of chemical and biological species. Previous studies have demonstrated that sensitive and selective detection of ions and biomolecules can be achieved by controlled modification of the sensing part with an ion-selective membrane and receptors of interest. However, no systematic studies have been performed on the impact of the transducer on sensing performance. In this paper, we introduce the concept of a nanoscale field-effect transistor (FET) as a reusable and sensitive transducer for extended-gate biosensors. The capacitive effect from the external sensing part can degrade the sensing performance, but the nanoscale FET can reduce this effect. The nanoscale FET with a gate-all-around (GAA) structure exhibits a higher pH sensitivity than a commercially available FET, which is widely used in conventional extended-gate biosensors. A sensitivity reduction is observed for the commercial FET, whereas the pH sensitivity is insensitive to the area of the sensing region in the nanoscale FET, thus allowing the scaling of the detection area. Our analysis based on a capacitive model suggests that the high pH sensitivity in the compact sensing area originates from the small input capacitance of the nanoscale FET transducer. Moreover, a decrease in the nanowire width of the GAA FET leads to an improvement in the pH sensitivity. The extended-gate approach with the nanoscale FET-based transduction can pave the way for a highly sensitive analysis of chemical and biological species with a small sample volume.
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Affiliation(s)
- Jae Kwon
- Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Korea
| | - Byung-Hyun Lee
- School of Electrical Engineering, KAIST, Daejeon 34141, Korea
| | - Seong-Yeon Kim
- School of Electrical Engineering, KAIST, Daejeon 34141, Korea
| | - Jun-Young Park
- School of Electrical Engineering, KAIST, Daejeon 34141, Korea
| | - Hagyoul Bae
- School of Electrical Engineering, KAIST, Daejeon 34141, Korea
| | - Yang-Kyu Choi
- School of Electrical Engineering, KAIST, Daejeon 34141, Korea
| | - Jae-Hyuk Ahn
- Department of Electronic Engineering, Kwangwoon University, Seoul 01897, Korea
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19
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Rollo S, Rani D, Leturcq R, Olthuis W, Pascual García C. High Aspect Ratio Fin-Ion Sensitive Field Effect Transistor: Compromises toward Better Electrochemical Biosensing. NANO LETTERS 2019; 19:2879-2887. [PMID: 31014066 DOI: 10.1021/acs.nanolett.8b04988] [Citation(s) in RCA: 11] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
The development of next generation medicines demands more sensitive and reliable label-free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of the main possible technologies to cover the existing gap. The general trend for the sensors has been miniaturization with the expectation of improving sensitivity and response time but presenting issues with reproducibility and noise level. Here we propose a Fin-Field Effect Transistor (FinFET) with a high height to width aspect ratio for electrochemical biosensing solving the issue of nanosensors in terms of reproducibility and noise, while keeping the fast response time. We fabricated different devices and characterized their performance with their response to the pH changes that fitted to a Nernst-Poisson model. The experimental data were compared with simulations of devices with different aspect ratio, establishing an advantage in linearity and lower device resistance to provide higher current signals for the FinFETs with higher aspect ratio. In addition, these FinFETs promise the optimization of reliability and efficiency in terms of limits of detection for which the interplay of the size and geometry of the sensor with the diffusion of the analytes plays a pivotal role.
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Affiliation(s)
- Serena Rollo
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology (LIST) , Belvaux L-4422 , Luxembourg
- BIOS Lab on Chip Group, MESA+ Institute for Nanotechnology , University of Twente , Enschede 7522 , The Netherlands
| | - Dipti Rani
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology (LIST) , Belvaux L-4422 , Luxembourg
| | - Renaud Leturcq
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology (LIST) , Belvaux L-4422 , Luxembourg
| | - Wouter Olthuis
- BIOS Lab on Chip Group, MESA+ Institute for Nanotechnology , University of Twente , Enschede 7522 , The Netherlands
| | - César Pascual García
- Materials Research and Technology Department , Luxembourg Institute of Science and Technology (LIST) , Belvaux L-4422 , Luxembourg
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20
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Chen X, Chen S, Hu Q, Zhang SL, Solomon P, Zhang Z. Device Noise Reduction for Silicon Nanowire Field-Effect-Transistor Based Sensors by Using a Schottky Junction Gate. ACS Sens 2019; 4:427-433. [PMID: 30632733 DOI: 10.1021/acssensors.8b01394] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/08/2023]
Abstract
The sensitivity of metal oxide semiconductor field-effect transistor (MOSFET) based nanoscale sensors is ultimately limited by noise induced by carrier trapping/detrapping processes at the gate oxide/semiconductor interfaces. We have designed a Schottky junction gated silicon nanowire field-effect transistor (SiNW-SJGFET) sensor, where the Schottky junction replaces the noisy oxide/semiconductor interface. Our sensor exhibits significantly reduced device noise, 2.1 × 10-9 V2 μm2/Hz at 1 Hz, compared to reference devices with the oxide/semiconductor interface operated at both inversion and depletion modes. Further improvement can be anticipated by wrapping the nanowire by such a Schottky junction, thereby eliminating all oxide/semiconductor interfaces. Hence, a combination of the low-noise SiNW-SJGFET device with a sensing surface of the Nernstian response limit holds promises for future high signal-to-noise ratio sensor applications.
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Affiliation(s)
- Xi Chen
- Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden
| | - Si Chen
- Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden
| | - Qitao Hu
- Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden
| | - Shi-Li Zhang
- Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden
| | - Paul Solomon
- IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, United States
| | - Zhen Zhang
- Division of Solid-State Electronics, Department of Engineering Sciences, The Ångström Laboratory, Uppsala University, P.O. Box 534, SE-751 21 Uppsala, Sweden
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21
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Garcia-Cordero E, Bellando F, Zhang J, Wildhaber F, Longo J, Guérin H, Ionescu AM. Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers. ACS NANO 2018; 12:12646-12656. [PMID: 30543395 DOI: 10.1021/acsnano.8b07413] [Citation(s) in RCA: 32] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Wearable systems could offer noninvasive and real-time solutions for monitoring of biomarkers in human sweat as an alternative to blood testing. Recent studies have demonstrated that the concentration of certain biomarkers in sweat can be directly correlated to their concentrations in blood, making sweat a trusted biofluid candidate for noninvasive diagnostics. We introduce a fully on-chip integrated wearable sweat sensing system to track biochemical information at the surface of the skin in real time. This system heterogeneously integrates, on a single silicon chip, state-of-the-art ultrathin body (UTB) fully depleted silicon-on-insulator (FD-SOI) ISFET sensors with a biocompatible microfluidic interface, to deliver a "lab-on-skin" sensing platform. A full process for the fabrication of this system is proposed in this work and is demonstrated by standard semiconductor fabrication procedures. The system is capable of collecting small volumes of sweat from the skin of a human and posteriorly passively driving the biofluid, by capillary action, to a set of functionalized ISFETs for analysis of pH level and Na+ and K+ concentrations. Drop-casted ion-sensing membranes on different sets of sensors on the same substrate enable multiparameter analysis on the same chip, with small and controlled cross-sensitivities, whereas a miniaturized quasireference electrodes set a stable analyte potential, avoiding the use of a cumbersome external reference electrode. The progress of lab-on-skin technology reported here can lead to autonomous wearable systems enabling real-time continuous monitoring of sweat composition, with applications ranging from medicine to lifestyle behavioral engineering and sports.
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Affiliation(s)
- Erick Garcia-Cordero
- Nanoelectronic Devices Laboratory , École Polytechnique Fédérale de Lausanne , Lausanne 1015 , Switzerland
| | - Francesco Bellando
- Nanoelectronic Devices Laboratory , École Polytechnique Fédérale de Lausanne , Lausanne 1015 , Switzerland
| | - Junrui Zhang
- Nanoelectronic Devices Laboratory , École Polytechnique Fédérale de Lausanne , Lausanne 1015 , Switzerland
| | | | - Johan Longo
- Xsensio SA , Innovation Park , Lausanne 1015 , Switzerland
| | - Hoël Guérin
- Xsensio SA , Innovation Park , Lausanne 1015 , Switzerland
| | - Adrian M Ionescu
- Nanoelectronic Devices Laboratory , École Polytechnique Fédérale de Lausanne , Lausanne 1015 , Switzerland
- Xsensio SA , Innovation Park , Lausanne 1015 , Switzerland
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22
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Lowe BM, Sun K, Zeimpekis I, Skylaris CK, Green NG. Field-effect sensors - from pH sensing to biosensing: sensitivity enhancement using streptavidin-biotin as a model system. Analyst 2018; 142:4173-4200. [PMID: 29072718 DOI: 10.1039/c7an00455a] [Citation(s) in RCA: 78] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/18/2022]
Abstract
Field-Effect Transistor sensors (FET-sensors) have been receiving increasing attention for biomolecular sensing over the last two decades due to their potential for ultra-high sensitivity sensing, label-free operation, cost reduction and miniaturisation. Whilst the commercial application of FET-sensors in pH sensing has been realised, their commercial application in biomolecular sensing (termed BioFETs) is hindered by poor understanding of how to optimise device design for highly reproducible operation and high sensitivity. In part, these problems stem from the highly interdisciplinary nature of the problems encountered in this field, in which knowledge of biomolecular-binding kinetics, surface chemistry, electrical double layer physics and electrical engineering is required. In this work, a quantitative analysis and critical review has been performed comparing literature FET-sensor data for pH-sensing with data for sensing of biomolecular streptavidin binding to surface-bound biotin systems. The aim is to provide the first systematic, quantitative comparison of BioFET results for a single biomolecular analyte, specifically streptavidin, which is the most commonly used model protein in biosensing experiments, and often used as an initial proof-of-concept for new biosensor designs. This novel quantitative and comparative analysis of the surface potential behaviour of a range of devices demonstrated a strong contrast between the trends observed in pH-sensing and those in biomolecule-sensing. Potential explanations are discussed in detail and surface-chemistry optimisation is shown to be a vital component in sensitivity-enhancement. Factors which can influence the response, yet which have not always been fully appreciated, are explored and practical suggestions are provided on how to improve experimental design.
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Affiliation(s)
- Benjamin M Lowe
- Department of Electronics and Computer Science, Nano Research Group, University of Southampton, UK.
| | - Kai Sun
- Department of Electronics and Computer Science, Nano Research Group, University of Southampton, UK.
| | - Ioannis Zeimpekis
- Department of Electronics and Computer Science, Nano Research Group, University of Southampton, UK.
| | | | - Nicolas G Green
- Department of Electronics and Computer Science, Nano Research Group, University of Southampton, UK.
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23
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Ma S, Li X, Lee YK, Zhang A. Direct label-free protein detection in high ionic strength solution and human plasma using dual-gate nanoribbon-based ion-sensitive field-effect transistor biosensor. Biosens Bioelectron 2018; 117:276-282. [PMID: 29909199 DOI: 10.1016/j.bios.2018.05.061] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2018] [Revised: 05/28/2018] [Accepted: 05/31/2018] [Indexed: 12/12/2022]
Abstract
We report on direct label-free protein detection in high ionic strength solution and human plasma by a dual-gate nanoribbon-based ion-sensitive field-effect transistor (NR-ISFET) biosensor system with excellent sensitivity and specificity in both solution-gate (SG) and dual-gate (DG) modes. Compared with previously reported results, the NR-ISFET biosensor enables selective prostate specific antigen (PSA) detection based on antibody-antigen binding in broader detection range with lower LOD. For the first time, real-time specific detection of PSA of 10 pM to 1 μM in 100 mM phosphate buffer (PB) was demonstrated by conductance measurements using the polyethylene glycol (PEG)-modified NR-ISFET biosensors in DG mode with the back-gate bias (VBG) of 20 V. Due to larger maximum transconductance value resulting from the modulation of NR-ISFET channel by the back gate in DG mode, the detection range can be broadened with larger linear detection region (100 pM to 100 nM) and lower limit of detection (LOD, 10 pM) as compared to those in SG mode. Moreover, the influence of different back-gate bias from VBG = 5 V to VBG = 25 V on the biosensor performance has been investigated. Furthermore, direct PSA detection of 100 pM to 1 μM in human plasma was demonstrated by using the PEG-modified NR-ISFET in DG mode, enabling direct detection of protein in human blood for clinical applications since the LOD of 100 pM PSA can meet the clinical requirements.
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Affiliation(s)
- Shenhui Ma
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China; Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Xin Li
- School of Microelectronics, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China; Guangdong Shunde Xi'an Jiaotong University Academy, Foshan, Guangdong 528300, China.
| | - Yi-Kuen Lee
- Department of Mechanical and Aerospace Engineering, The Hong Kong University of Science and Technology, Hong Kong SAR, China
| | - Anping Zhang
- State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an, Shaanxi 710049, China.
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24
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Tran DP, Pham TTT, Wolfrum B, Offenhäusser A, Thierry B. CMOS-Compatible Silicon Nanowire Field-Effect Transistor Biosensor: Technology Development toward Commercialization. MATERIALS (BASEL, SWITZERLAND) 2018; 11:E785. [PMID: 29751688 PMCID: PMC5978162 DOI: 10.3390/ma11050785] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/15/2018] [Revised: 05/08/2018] [Accepted: 05/10/2018] [Indexed: 12/22/2022]
Abstract
Owing to their two-dimensional confinements, silicon nanowires display remarkable optical, magnetic, and electronic properties. Of special interest has been the development of advanced biosensing approaches based on the field effect associated with silicon nanowires (SiNWs). Recent advancements in top-down fabrication technologies have paved the way to large scale production of high density and quality arrays of SiNW field effect transistor (FETs), a critical step towards their integration in real-life biosensing applications. A key requirement toward the fulfilment of SiNW FETs' promises in the bioanalytical field is their efficient integration within functional devices. Aiming to provide a comprehensive roadmap for the development of SiNW FET based sensing platforms, we critically review and discuss the key design and fabrication aspects relevant to their development and integration within complementary metal-oxide-semiconductor (CMOS) technology.
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Affiliation(s)
- Duy Phu Tran
- Future Industries Institute and ARC Centre of Excellence for Convergent Nano-Bio Science and Technology, University of South Australia, Mawson Lakes 5095, South Australia, Australia.
| | - Thuy Thi Thanh Pham
- Future Industries Institute and ARC Centre of Excellence for Convergent Nano-Bio Science and Technology, University of South Australia, Mawson Lakes 5095, South Australia, Australia.
| | - Bernhard Wolfrum
- Department of Electrical, Electronic and Computer Engineering, Technical University of Munich, 85748 Munich, Germany.
| | | | - Benjamin Thierry
- Future Industries Institute and ARC Centre of Excellence for Convergent Nano-Bio Science and Technology, University of South Australia, Mawson Lakes 5095, South Australia, Australia.
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25
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Lowe BM, Skylaris CK, Green NG, Shibuta Y, Sakata T. Molecular dynamics simulation of potentiometric sensor response: the effect of biomolecules, surface morphology and surface charge. NANOSCALE 2018; 10:8650-8666. [PMID: 29700545 DOI: 10.1039/c8nr00776d] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The silica-water interface is critical to many modern technologies in chemical engineering and biosensing. One technology used commonly in biosensors, the potentiometric sensor, operates by measuring the changes in electric potential due to changes in the interfacial electric field. Predictive modelling of this response caused by surface binding of biomolecules remains highly challenging. In this work, through the most extensive molecular dynamics simulation of the silica-water interfacial potential and electric field to date, we report a novel prediction and explanation of the effects of nano-morphology on sensor response. Amorphous silica demonstrated a larger potentiometric response than an equivalent crystalline silica model due to increased sodium adsorption, in agreement with experiments showing improved sensor response with nano-texturing. We provide proof-of-concept that molecular dynamics can be used as a complementary tool for potentiometric biosensor response prediction. Effects that are conventionally neglected, such as surface morphology, water polarisation, biomolecule dynamics and finite-size effects, are explicitly modelled.
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Affiliation(s)
- B M Lowe
- Department of Materials Engineering, School of Engineering, The University of Tokyo 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
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26
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Balakrishnan D, Lamblin G, Thomann JS, van den Berg A, Olthuis W, Pascual-García C. Electrochemical Control of pH in Nanoliter Volumes. NANO LETTERS 2018; 18:2807-2815. [PMID: 29617568 DOI: 10.1021/acs.nanolett.7b05054] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The electrochemical management of the proton concentration in miniaturized dimensions opens the way to control and parallelize multistep chemical reactions, but still it faces many challenges linked to the efficient proton generation and control of their diffusion. Here we present a device operated electrochemically that demonstrates the control of the pH in a cell of ∼140 nL. The device comprises a microfluidic reactor integrated with a pneumatic mechanism that allows the exchange of reagents and the isolation of protons to decrease the effect of their diffusion. We monitored the pH with a fluorescence marker and calculated the final value from the redox currents. We demonstrate a large pH amplitude control from neutral pH values beyond the fluorescence marker range at pH 5. On the basis of the calculations from the Faradaic currents, the minimum pH reached should undergo pH ∼ 0.9. The pH contrast between neutral and acid pH cells can be maintained during periods longer than 15 min with an appropriate design of a diffusion barrier.
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Affiliation(s)
- Divya Balakrishnan
- Luxembourg Institute of Science and Technology (LIST) , 41 Rue du Brill , L-4422 Belvaux , Luxembourg
- MESA+ Institute , University of Twente , Drienerlolaan 5 , 7522 NB Enschede , Netherlands
| | - Guillaume Lamblin
- Luxembourg Institute of Science and Technology (LIST) , 41 Rue du Brill , L-4422 Belvaux , Luxembourg
| | - Jean Sebastien Thomann
- Luxembourg Institute of Science and Technology (LIST) , 41 Rue du Brill , L-4422 Belvaux , Luxembourg
| | - Albert van den Berg
- MESA+ Institute , University of Twente , Drienerlolaan 5 , 7522 NB Enschede , Netherlands
| | - Wouter Olthuis
- MESA+ Institute , University of Twente , Drienerlolaan 5 , 7522 NB Enschede , Netherlands
| | - César Pascual-García
- Luxembourg Institute of Science and Technology (LIST) , 41 Rue du Brill , L-4422 Belvaux , Luxembourg
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27
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Gasparyan F, Zadorozhnyi I, Khondkaryan H, Arakelyan A, Vitusevich S. Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors. NANOSCALE RESEARCH LETTERS 2018; 13:87. [PMID: 29589128 PMCID: PMC5871613 DOI: 10.1186/s11671-018-2494-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/28/2017] [Accepted: 03/09/2018] [Indexed: 06/08/2023]
Abstract
Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current-voltage (I-V) characterization. The static I-V dependencies demonstrate the high quality of fabricated silicon FETs without leakage current. Transport and noise properties of NW FET structures were investigated under different light illumination conditions, as well as in sensor configuration in an aqueous solution with different pH values. Furthermore, we studied channel length effects on the photoconductivity, noise, and pH sensitivity. The magnitude of the channel current is approximately inversely proportional to the length of the current channel, and the pH sensitivity increases with the increase of channel length approaching the Nernst limit value of 59.5 mV/pH. We demonstrate that dominant 1/f-noise can be screened by the generation-recombination plateau at certain pH of the solution or external optical excitation. The characteristic frequency of the generation-recombination noise component decreases with increasing of illumination power. Moreover, it is shown that the measured value of the slope of 1/f-noise spectral density dependence on the current channel length is 2.7 which is close to the theoretically predicted value of 3.
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Affiliation(s)
- Ferdinand Gasparyan
- Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425 Jülich, Germany
- Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Armenia
| | - Ihor Zadorozhnyi
- Bioelectronics (ICS-8), Forschungszentrum Jülich, 52425 Jülich, Germany
| | - Hrant Khondkaryan
- Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Armenia
| | - Armen Arakelyan
- Yerevan State University, 1 Alex Manoogian St., 0025 Yerevan, Armenia
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28
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Iskierko Z, Noworyta K, Sharma PS. Molecular recognition by synthetic receptors: Application in field-effect transistor based chemosensing. Biosens Bioelectron 2018. [PMID: 29525669 DOI: 10.1016/j.bios.2018.02.058] [Citation(s) in RCA: 19] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/17/2022]
Abstract
Molecular recognition, i.e., ability of one molecule to recognize another through weak bonding interactions, is one of the bases of life. It is often implemented to sensing systems of high merits. Preferential recognition of the analyte (guest) by the receptor (host) induces changes in physicochemical properties of the sensing system. These changes are measured by using suitable signal transducers. Because of possibility of miniaturization, fast response, and high sensitivity, field-effect transistors (FETs) are more frequently being used for that purpose. A FET combined with a biological material offers the potential to overcome many challenges approached in sensing. However, low stability of biological materials under measurement conditions is a serious problem. To circumvent this problem, synthetic receptors were integrated with the gate surface of FETs to provide robust performance. In the present critical review, the approach utilized to devise chemosensors integrating synthetic receptors and FET transduction is discussed in detail. The progress in this field was summarized and important outcome was provided.
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Affiliation(s)
- Zofia Iskierko
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland
| | - Krzysztof Noworyta
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland.
| | - Piyush Sindhu Sharma
- Institute of Physical Chemistry, Polish Academy of Sciences, Kasprzaka 44/52, 01-224 Warsaw, Poland.
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Sun C, Zeng R, Zhang J, Qiu ZJ, Wu D. Effects of UV-Ozone Treatment on Sensing Behaviours of EGFETs with Al₂O₃ Sensing Film. MATERIALS (BASEL, SWITZERLAND) 2017; 10:E1432. [PMID: 29244769 PMCID: PMC5744367 DOI: 10.3390/ma10121432] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/22/2017] [Revised: 11/23/2017] [Accepted: 12/13/2017] [Indexed: 11/16/2022]
Abstract
The effects of UV-ozone (UVO) treatment on the sensing behaviours of extended-gate field-effect transistors (EGFETs) that use Al₂O₃ as the sensing film have been investigated. The Al₂O₃ sensing films are UVO-treated with various duration times and the corresponding EGFET sensing behaviours, such as sensitivity, hysteresis, and long-term stability, are electrically evaluated under various measurement conditions. Physical analysis is also performed to characterize the surface conditions of the UVO-treated sensing films using X-ray photoelectron spectroscopy and atomic force microscopy. It is found that UVO treatment effectively reduces the buried sites in the Al₂O₃ sensing film and subsequently results in reduced hysteresis and improved long-term stability of EGFET. Meanwhile, the observed slightly smoother Al₂O₃ film surface post UVO treatment corresponds to decreased surface sites and slightly reduced pH sensitivity of the Al₂O₃ film. The sensitivity degradation is found to be monotonically correlated with the UVO treatment time. A treatment time of 10 min is found to yield an excellent performance trade-off: clearly improved long-term stability and reduced hysteresis at the cost of negligible sensitivity reduction. These results suggest that UVO treatment is a simple and facile method to improve the overall sensing performance of the EGFETs with an Al₂O₃ sensing film.
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Affiliation(s)
- Cuiling Sun
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China.
| | - Ruixue Zeng
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China.
| | - Junkai Zhang
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China.
| | - Zhi-Jun Qiu
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China.
- School of Information Science and Technology, Fudan University, Shanghai 200433, China.
| | - Dongping Wu
- State Key Laboratory of ASIC and System, Fudan University, Shanghai 200433, China.
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30
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Lim CM, Lee IK, Lee KJ, Oh YK, Shin YB, Cho WJ. Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2017; 18:17-25. [PMID: 28179955 PMCID: PMC5256244 DOI: 10.1080/14686996.2016.1253409] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2016] [Revised: 10/24/2016] [Accepted: 10/24/2016] [Indexed: 05/22/2023]
Abstract
This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.
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Affiliation(s)
- Cheol-Min Lim
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
| | - In-Kyu Lee
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Ki Joong Lee
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Young Kyoung Oh
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
| | - Yong-Beom Shin
- Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB), Daejeon, Republic of Korea
- Corresponding author.
| | - Won-Ju Cho
- Department of Electronic Materials Engineering, Kwangwoon University, Seoul, Republic of Korea
- Corresponding author.
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31
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Namdari P, Daraee H, Eatemadi A. Recent Advances in Silicon Nanowire Biosensors: Synthesis Methods, Properties, and Applications. NANOSCALE RESEARCH LETTERS 2016; 11:406. [PMID: 27639579 PMCID: PMC5026984 DOI: 10.1186/s11671-016-1618-z] [Citation(s) in RCA: 48] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2016] [Accepted: 09/07/2016] [Indexed: 05/28/2023]
Abstract
The application of silicon nanowire (SiNW) biosensor as a subtle, label-free, and electrical tool has been extensively demonstrated by several researchers over the past few decades. Human ability to delicately fabricate and control its chemical configuration, morphology, and arrangement either separately or in combination with other materials as lead to the development of a nanomaterial with specific and efficient electronic and catalytic properties useful in the fields of biological sciences and renewable energy. This review illuminates on the various synthetic methods of SiNW, with its optical and electrical properties that make them one of the most applicable nanomaterials in the field of biomolecule sensing, photoelectrochemical conversion, and diseases diagnostics.
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Affiliation(s)
- Pooria Namdari
- Mechanical Engineering, Sharif University of Technology, Tehran, Iran
| | - Hadis Daraee
- Department of Medical Biotechnology, School of Advance Science in Medicine, Tehran University of Medical Sciences, Tehran, 69971-18544 Iran
| | - Ali Eatemadi
- Department of Medical Biotechnology, School of Advance Science in Medicine, Tehran University of Medical Sciences, Tehran, 69971-18544 Iran
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32
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Chen S, van Nieuwkasteele JW, van den Berg A, Eijkel JCT. Ion-Step Method for Surface Potential Sensing of Silicon Nanowires. Anal Chem 2016; 88:7890-3. [DOI: 10.1021/acs.analchem.6b02230] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Songyue Chen
- Department
of Mechanical and Electrical Engineering, Xiamen University, 361005 Xiamen, China
| | - Jan W. van Nieuwkasteele
- MESA+ Institute for Nanotechnology & MIRA Institute for Biomedical Technology and Technical Medicine, University of Twente, 7522NH Enschede, The Netherlands
| | - Albert van den Berg
- MESA+ Institute for Nanotechnology & MIRA Institute for Biomedical Technology and Technical Medicine, University of Twente, 7522NH Enschede, The Netherlands
| | - Jan C. T. Eijkel
- MESA+ Institute for Nanotechnology & MIRA Institute for Biomedical Technology and Technical Medicine, University of Twente, 7522NH Enschede, The Netherlands
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33
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Sun K, Zeimpekis I, Hu C, Ditshego NMJ, Thomas O, de Planque MRR, Chong HMH, Morgan H, Ashburn P. Effect of subthreshold slope on the sensitivity of nanoribbon sensors. NANOTECHNOLOGY 2016; 27:285501. [PMID: 27255984 DOI: 10.1088/0957-4484/27/28/285501] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
In this work, we investigate how the sensitivity of a nanowire or nanoribbon sensor is influenced by the subthreshold slope of the sensing transistor. Polysilicon nanoribbon sensors are fabricated with a wide range of subthreshold slopes and the sensitivity is characterized using pH measurements. It is shown that there is a strong relationship between the sensitivity and the device subthreshold slope. The sensitivity is characterized using the current sensitivity per pH, which is shown to increase from 1.2% ph(-1) to 33.6% ph(-1) as the subthreshold slope improves from 6.2 V dec(-1) to 0.23 V dec(-1) respectively. We propose a model that relates current sensitivity per pH to the subthreshold slope of the sensing transistor. The model shows that sensitivity is determined only on the subthreshold slope of the sensing transistor and the choice of gate insulator. The model fully explains the values of current sensitivity per pH for the broad range of subthreshold slopes obtained in our fabricated nanoribbon devices. It is also able to explain values of sensitivity reported in the literature, which range from 2.5% pH(-1) to 650% pH(-1) for a variety of nanoribbon and nanowire sensors. Furthermore, it shows that aggressive device scaling is not the key to high sensitivity. For the first time, a figure-of-merit is proposed to compare the performance of nanoscale field effect transistor sensors fabricated using different materials and technologies.
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Affiliation(s)
- K Sun
- Zepler Institute, Electronics & Computer Science, University of Southampton, Southampton, SO17 1BJ, UK
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34
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Cheah BC, Macdonald AI, Martin C, Streklas AJ, Campbell G, Al-Rawhani MA, Nemeth B, Grant JP, Barrett MP, Cumming DRS. An Integrated Circuit for Chip-Based Analysis of Enzyme Kinetics and Metabolite Quantification. IEEE TRANSACTIONS ON BIOMEDICAL CIRCUITS AND SYSTEMS 2016; 10:721-730. [PMID: 26742138 DOI: 10.1109/tbcas.2015.2487603] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We have created a novel chip-based diagnostic tools based upon quantification of metabolites using enzymes specific for their chemical conversion. Using this device we show for the first time that a solid-state circuit can be used to measure enzyme kinetics and calculate the Michaelis-Menten constant. Substrate concentration dependency of enzyme reaction rates is central to this aim. Ion-sensitive field effect transistors (ISFET) are excellent transducers for biosensing applications that are reliant upon enzyme assays, especially since they can be fabricated using mainstream microelectronics technology to ensure low unit cost, mass-manufacture, scaling to make many sensors and straightforward miniaturisation for use in point-of-care devices. Here, we describe an integrated ISFET array comprising 2(16) sensors. The device was fabricated with a complementary metal oxide semiconductor (CMOS) process. Unlike traditional CMOS ISFET sensors that use the Si3N4 passivation of the foundry for ion detection, the device reported here was processed with a layer of Ta2O5 that increased the detection sensitivity to 45 mV/pH unit at the sensor readout. The drift was reduced to 0.8 mV/hour with a linear pH response between pH 2-12. A high-speed instrumentation system capable of acquiring nearly 500 fps was developed to stream out the data. The device was then used to measure glucose concentration through the activity of hexokinase in the range of 0.05 mM-231 mM, encompassing glucose's physiological range in blood. Localised and temporal enzyme kinetics of hexokinase was studied in detail. These results present a roadmap towards a viable personal metabolome machine.
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35
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Implementing Silicon Nanoribbon Field-Effect Transistors as Arrays for Multiple Ion Detection. BIOSENSORS-BASEL 2016; 6:21. [PMID: 27164151 PMCID: PMC4931481 DOI: 10.3390/bios6020021] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2016] [Revised: 04/23/2016] [Accepted: 04/26/2016] [Indexed: 11/22/2022]
Abstract
Ionic gradients play a crucial role in the physiology of the human body, ranging from metabolism in cells to muscle contractions or brain activities. To monitor these ions, inexpensive, label-free chemical sensing devices are needed. Field-effect transistors (FETs) based on silicon (Si) nanowires or nanoribbons (NRs) have a great potential as future biochemical sensors as they allow for the integration in microscopic devices at low production costs. Integrating NRs in dense arrays on a single chip expands the field of applications to implantable electrodes or multifunctional chemical sensing platforms. Ideally, such a platform is capable of detecting numerous species in a complex analyte. Here, we demonstrate the basis for simultaneous sodium and fluoride ion detection with a single sensor chip consisting of arrays of gold-coated SiNR FETs. A microfluidic system with individual channels allows modifying the NR surfaces with self-assembled monolayers of two types of ion receptors sensitive to sodium and fluoride ions. The functionalization procedure results in a differential setup having active fluoride- and sodium-sensitive NRs together with bare gold control NRs on the same chip. Comparing functionalized NRs with control NRs allows the compensation of non-specific contributions from changes in the background electrolyte concentration and reveals the response to the targeted species.
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36
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Maedler C, Kim D, Spanjaard RA, Hong M, Erramilli S, Mohanty P. Sensing of the Melanoma Biomarker TROY Using Silicon Nanowire Field-Effect Transistors. ACS Sens 2016. [DOI: 10.1021/acssensors.6b00017] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Affiliation(s)
- Carsten Maedler
- Department
of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Daniel Kim
- Department
of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Remco A. Spanjaard
- Femto Diagnostics, 53 Bay State
Road, Boston, Massachusetts 02215, United States
| | - Mi Hong
- Department
of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
| | - Shyamsunder Erramilli
- Department
of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
- Department
of Biomedical Engineering and Photonics Center, Boston University, 8
St. Mary’s Street, Boston, Massachusetts 02215, United States
| | - Pritiraj Mohanty
- Department
of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, United States
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37
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Zeimpekis I, Sun K, Hu C, Ditshego NMJ, Thomas O, de Planque MRR, Chong HMH, Morgan H, Ashburn P. Dual-gate polysilicon nanoribbon biosensors enable high sensitivity detection of proteins. NANOTECHNOLOGY 2016; 27:165502. [PMID: 26954011 DOI: 10.1088/0957-4484/27/16/165502] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/08/2023]
Abstract
We demonstrate the advantages of dual-gate polysilicon nanoribbon biosensors with a comprehensive evaluation of different measurement schemes for pH and protein sensing. In particular, we compare the detection of voltage and current changes when top- and bottom-gate bias is applied. Measurements of pH show that a large voltage shift of 491 mV pH(-1) is obtained in the subthreshold region when the top-gate is kept at a fixed potential and the bottom-gate is varied (voltage sweep). This is an improvement of 16 times over the 30 mV pH(-1) measured using a top-gate sweep with the bottom-gate at a fixed potential. A similar large voltage shift of 175 mV is obtained when the protein avidin is sensed using a bottom-gate sweep. This is an improvement of 20 times compared with the 8.8 mV achieved from a top-gate sweep. Current measurements using bottom-gate sweeps do not deliver the same signal amplification as when using bottom-gate sweeps to measure voltage shifts. Thus, for detecting a small signal change on protein binding, it is advantageous to employ a double-gate transistor and to measure a voltage shift using a bottom-gate sweep. For top-gate sweeps, the use of a dual-gate transistor enables the current sensitivity to be enhanced by applying a negative bias to the bottom-gate to reduce the carrier concentration in the nanoribbon. For pH measurements, the current sensitivity increases from 65% to 149% and for avidin sensing it increases from 1.4% to 2.5%.
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Affiliation(s)
- I Zeimpekis
- Zepler Institute, Electronics & Computer Science, University of Southampton, Southampton, SO17 1BJ, UK
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38
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Hu C, Zeimpekis I, Sun K, Anderson S, Ashburn P, Morgan H. Low-Cost Nanoribbon Sensors for Protein Analysis in Human Serum Using a Miniature Bead-Based Enzyme-Linked Immunosorbent Assay. Anal Chem 2016; 88:4872-8. [DOI: 10.1021/acs.analchem.6b00702] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/14/2022]
Affiliation(s)
- Chunxiao Hu
- Department of Electronics and Computer
Science, and Institute for Life Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Ioannis Zeimpekis
- Department of Electronics and Computer
Science, and Institute for Life Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Kai Sun
- Department of Electronics and Computer
Science, and Institute for Life Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Sally Anderson
- Sharp Laboratories of Europe, Oxford OX4 4GB, United Kingdom
| | - Peter Ashburn
- Department of Electronics and Computer
Science, and Institute for Life Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom
| | - Hywel Morgan
- Department of Electronics and Computer
Science, and Institute for Life Sciences, University of Southampton, Southampton SO17 1BJ, United Kingdom
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39
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Lee IK, Jeun M, Jang HJ, Cho WJ, Lee KH. A self-amplified transistor immunosensor under dual gate operation: highly sensitive detection of hepatitis B surface antigen. NANOSCALE 2015; 7:16789-16797. [PMID: 26399739 DOI: 10.1039/c5nr03146j] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.1] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
Ion-sensitive field-effect transistors (ISFETs), although they have attracted considerable attention as effective immunosensors, have still not been adopted for practical applications owing to several problems: (1) the poor sensitivity caused by the short Debye screening length in media with high ion concentration, (2) time-consuming preconditioning processes for achieving the highly-diluted media, and (3) the low durability caused by undesirable ions such as sodium chloride in the media. Here, we propose a highly sensitive immunosensor based on a self-amplified transistor under dual gate operation (immuno-DG ISFET) for the detection of hepatitis B surface antigen. To address the challenges in current ISFET-based immunosensors, we have enhanced the sensitivity of an immunosensor by precisely tailoring the nanostructure of the transistor. In the pH sensing test, the immuno-DG ISFET showed superior sensitivity (2085.53 mV per pH) to both standard ISFET under single gate operation (58.88 mV per pH) and DG ISFET with a non-tailored transistor (381.14 mV per pH). Moreover, concerning the detection of hepatitis B surface antigens (HBsAg) using the immuno-DG ISFET, we have successfully detected trace amounts of HBsAg (22.5 fg mL(-1)) in a non-diluted 1× PBS medium with a high sensitivity of 690 mV. Our results demonstrate that the proposed immuno-DG ISFET can be a biosensor platform for practical use in the diagnosis of various diseases.
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Affiliation(s)
- I-K Lee
- Center for Biomaterials, Biomedical Research Institute, Korea Institute of Science and Technology (KIST), 5 Hwarang-ro 14-gil, Seongbuk-gu, Seoul 136-791, Republic of Korea.
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40
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Hwang SW, Lee CH, Cheng H, Jeong JW, Kang SK, Kim JH, Shin J, Yang J, Liu Z, Ameer GA, Huang Y, Rogers JA. Biodegradable elastomers and silicon nanomembranes/nanoribbons for stretchable, transient electronics, and biosensors. NANO LETTERS 2015; 15:2801-8. [PMID: 25706246 DOI: 10.1021/nl503997m] [Citation(s) in RCA: 136] [Impact Index Per Article: 15.1] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
Transient electronics represents an emerging class of technology that exploits materials and/or device constructs that are capable of physically disappearing or disintegrating in a controlled manner at programmed rates or times. Inorganic semiconductor nanomaterials such as silicon nanomembranes/nanoribbons provide attractive choices for active elements in transistors, diodes and other essential components of overall systems that dissolve completely by hydrolysis in biofluids or groundwater. We describe here materials, mechanics, and design layouts to achieve this type of technology in stretchable configurations with biodegradable elastomers for substrate/encapsulation layers. Experimental and theoretical results illuminate the mechanical properties under large strain deformation. Circuit characterization of complementary metal-oxide-semiconductor inverters and individual transistors under various levels of applied loads validates the design strategies. Examples of biosensors demonstrate possibilities for stretchable, transient devices in biomedical applications.
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Affiliation(s)
- Suk-Won Hwang
- †KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul 136-701, Korea
| | - Chi Hwan Lee
- ‡Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Huanyu Cheng
- §Department of Mechanical Engineering, Civil and Environmental Engineering, Center for Engineering and Health, and Skin Disease Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Jae-Woong Jeong
- ∥Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309, United States
| | - Seung-Kyun Kang
- ‡Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jae-Hwan Kim
- ‡Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jiho Shin
- ⊥Department of Chemical and Biomolecular Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jian Yang
- #Department of Biomedical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhuangjian Liu
- ∇Institute of High Performance Computing, 1 Fusionopolis Way, #16-16 Connexis, Singapore 138632, Singapore
| | - Guillermo A Ameer
- #Department of Biomedical Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Yonggang Huang
- §Department of Mechanical Engineering, Civil and Environmental Engineering, Center for Engineering and Health, and Skin Disease Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - John A Rogers
- ‡Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- ○Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
- ◆Department of Chemistry, Mechanical Science and Engineering, Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
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41
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Rim T, Meyyappan M, Baek CK. Optimized operation of silicon nanowire field effect transistor sensors. NANOTECHNOLOGY 2014; 25:505501. [PMID: 25422407 DOI: 10.1088/0957-4484/25/50/505501] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Ion-sensitive field effect transistors have been advanced in recent years by utilizing silicon nanowires (Si-NWs), but establishing their optimized operation regime is an area of ongoing research. We propose a modified configuration of SiNWs in the form of a honeycomb structure to obtain high signal to noise ratio and high current stability. The low-frequency noise characteristics and the electrical stress are systematically considered for the optimization and compared against conventional SiNW devices. The operation voltage of the device severely affects the sensing stability; as the gate voltage is increased, the signal-to-noise ratio is enhanced, however, the stress effect becomes severe, and vice versa. The honeycomb nanowire structure shows enhanced noise characteristics in low voltage operation, proving to be an optimum solution for achieving highly stable sensor operation.
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Affiliation(s)
- Taiuk Rim
- Department of Creative IT Engineering and Future IT Innovation Lab., Pohang University of Science and Technology (POSTECH), Pohang, 790784, Korea
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42
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Mu L, Droujinine IA, Rajan NK, Sawtelle SD, Reed MA. Direct, rapid, and label-free detection of enzyme-substrate interactions in physiological buffers using CMOS-compatible nanoribbon sensors. NANO LETTERS 2014; 14:5315-22. [PMID: 25164567 DOI: 10.1021/nl502366e] [Citation(s) in RCA: 25] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
We demonstrate the versatility of Al2O3-passivated Si nanowire devices ("nanoribbons") in the analysis of enzyme-substrate interactions via the monitoring of pH change. Our approach is shown to be effective through the detection of urea in phosphate buffered saline (PBS), and penicillinase in PBS and urine, at limits of detection of <200 μM and 0.02 units/mL, respectively. The ability to extract accurate enzyme kinetics and the Michaelis-Menten constant (Km) from the acetylcholine-acetylcholinesterase reaction is also demonstrated.
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Affiliation(s)
- Luye Mu
- Department of Electrical Engineering, Yale University , New Haven, Connecticut 06511, United States
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43
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Li J, Pud S, Petrychuk M, Offenhäusser A, Vitusevich S. Sensitivity enhancement of Si nanowire field effect transistor biosensors using single trap phenomena. NANO LETTERS 2014; 14:3504-3509. [PMID: 24813644 DOI: 10.1021/nl5010724] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Trapping-detrapping processes in nanostructures are generally considered to be destabilizing factors. However, we discovered a positive role for a single trap in the registration and transformation of useful signal. We use switching kinetics of current fluctuations generated by a single trap in the dielectric of liquid-gated nanowire field effect transistors (FETs) as a basic principle for a novel highly sensitive approach to monitor the gate surface potential. An increase in Si nanowire FET sensitivity of 400% was demonstrated.
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Affiliation(s)
- Jing Li
- Peter Grünberg Institute(PGI-8), Forschungszentrum Jülich , Jülich 52425, Germany
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Silicon nanowires as field-effect transducers for biosensor development: A review. Anal Chim Acta 2014; 825:1-25. [DOI: 10.1016/j.aca.2014.03.016] [Citation(s) in RCA: 95] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2013] [Revised: 03/11/2014] [Accepted: 03/13/2014] [Indexed: 12/28/2022]
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Kumar P, Maikap S, Prakash A, Tien TC. Time-dependent pH sensing phenomena using CdSe/ZnS quantum dots in EIS structure. NANOSCALE RESEARCH LETTERS 2014; 9:179. [PMID: 24725352 PMCID: PMC3991880 DOI: 10.1186/1556-276x-9-179] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2014] [Accepted: 03/31/2014] [Indexed: 05/24/2023]
Abstract
Time-dependent pH sensing phenomena of the core-shell CdSe/ZnS quantum dot (QD) sensors in EIS (electrolyte insulator semiconductor) structure have been investigated for the first time. The quantum dots are immobilized by chaperonin GroEL protein, which are observed by both atomic force microscope and scanning electron microscope. The diameter of one QD is approximately 6.5 nm. The QDs are not oxidized over a long time and core-shell CdSe/ZnS are confirmed by X-ray photon spectroscopy. The sensors are studied for sensing of hydrogen ions concentration in different buffer solutions at broad pH range of 2 to 12. The QD sensors show improved sensitivity (38 to 55 mV/pH) as compared to bare SiO2 sensor (36 to 23 mV/pH) with time period of 0 to 24 months, owing to the reduction of defects in the QDs. Therefore, the differential sensitivity of the QD sensors with respect to the bare SiO2 sensors is improved from 2 to 32 mV/pH for the time period of 0 to 24 months. After 24 months, the sensitivity of the QD sensors is close to ideal Nernstian response with good linearity of 99.96%. Stability and repeatability of the QD sensors show low drift (10 mV for 10 cycles) as well as small hysteresis characteristics (<10 mV). This QD sensor is very useful for future human disease diagnostics.
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Affiliation(s)
- Pankaj Kumar
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan
| | - Siddheswar Maikap
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan
- Bio-Sensor Group, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan
| | - Amit Prakash
- Thin Film Nano Technology Laboratory, Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan
| | - Ta-Chang Tien
- Material and Chemical Research Laboratories, Industrial Technology Research Institute Hsinchu 310, Taiwan
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A field effect transistor biosensor with a γ-pyrone derivative engineered lipid-sensing layer for ultrasensitive Fe3+ ion detection with low pH interference. Biosens Bioelectron 2014; 54:571-7. [DOI: 10.1016/j.bios.2013.11.051] [Citation(s) in RCA: 18] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2013] [Revised: 11/11/2013] [Accepted: 11/16/2013] [Indexed: 11/23/2022]
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Influence of conductivity and dielectric constant of water-dioxane mixtures on the electrical response of SiNW-based FETs. SENSORS 2014; 14:2350-61. [PMID: 24481233 PMCID: PMC3958210 DOI: 10.3390/s140202350] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/26/2013] [Revised: 01/22/2014] [Accepted: 01/24/2014] [Indexed: 02/07/2023]
Abstract
In this study, we report on the electrical response of top-down, p-type silicon nanowire field-effect transistors exposed to water and mixtures of water and dioxane. First, the capacitive coupling of the back gate and the liquid gate via an Ag/AgCl electrode were compared in water. It was found that for liquid gating smaller potentials are needed to obtain similar responses of the nanowire compared to back gating. In the case of back gating, the applied potential couples through the buried oxide layer, indicating that the associated capacitance dominates all other capacitances involved during this mode of operation. Next, the devices were exposed to mixtures of water and dioxane to study the effect of these mixtures on the device characteristics, including the threshold voltage (VT). The VT dependency on the mixture composition was found to be related to the decreased dissociation of the surface silanol groups and the conductivity of the mixture used. This latter was confirmed by experiments with constant conductivity and varying water–dioxane mixtures.
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De A, van Nieuwkasteele J, Carlen ET, van den Berg A. Integrated label-free silicon nanowire sensor arrays for (bio)chemical analysis. Analyst 2013; 138:3221-9. [PMID: 23608895 DOI: 10.1039/c3an36586g] [Citation(s) in RCA: 23] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
We present a label-free (bio)chemical analysis platform that uses all-electrical silicon nanowire sensor arrays integrated with a small volume microfluidic flow-cell for real-time (bio)chemical analysis and detection. The integrated sensing platform contains an automated multi-sample injection system that eliminates erroneous sensor responses from sample switching due to flow rate fluctuations and provides precise sample volumes down to 10 nl. Biochemical sensing is demonstrated with real-time 15-mer DNA-PNA (peptide nucleic acid) duplex hybridization measurements from different sample concentrations in a low ionic strength, and the equilibrium dissociation constant KD ≈ 140 nM has been extracted from the experimental data using the first order Langmuir binding model. Chemical sensing is demonstrated with pH measurements from different injected samples in flow that have sensitivities consistent with the gate-oxide materials. A differential sensor measurement configuration results in a 30× reduction in sensor drift. The integrated label-free analysis platform is suitable for a wide range of small volume chemical and biochemical analyses.
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Affiliation(s)
- Arpita De
- BIOS/Lab on a Chip Group, MESA+ Institute for Nanotechnology, University of Twente, Postbus 217, 7500 AE Enschede, The Netherlands
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Fu W, Nef C, Tarasov A, Wipf M, Stoop R, Knopfmacher O, Weiss M, Calame M, Schönenberger C. High mobility graphene ion-sensitive field-effect transistors by noncovalent functionalization. NANOSCALE 2013; 5:12104-12110. [PMID: 24142362 DOI: 10.1039/c3nr03940d] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Noncovalent functionalization is a well-known nondestructive process for property engineering of carbon nanostructures, including carbon nanotubes and graphene. However, it is not clear to what extend the extraordinary electrical properties of these carbon materials can be preserved during the process. Here, we demonstrated that noncovalent functionalization can indeed delivery graphene field-effect transistors (FET) with fully preserved mobility. In addition, these high-mobility graphene transistors can serve as a promising platform for biochemical sensing applications.
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Affiliation(s)
- W Fu
- Department of Physics, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland.
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Menzel A, Gübeli RJ, Güder F, Weber W, Zacharias M. Detection of real-time dynamics of drug-target interactions by ultralong nanowalls. LAB ON A CHIP 2013; 13:4173-4179. [PMID: 23982183 DOI: 10.1039/c3lc50694k] [Citation(s) in RCA: 7] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Detecting drug-target interactions in real-time is a powerful approach for drug discovery and analytics. We show here for the first time the ultra fast electrical real-time detection and quantification of antibiotics using a novel biohybrid nanosensor. The biomolecular sensing is performed on ultralong (mm range) high aspect ratio nanowall (50 nm width) surfaces functionalized with operator DNA tetO which is specifically bound by the sensor protein TetR. This sensor protein is released from the operator DNA in a dose dependent manner by exposing the device functionalized with this bound DNA-protein complex to tetracycline antibiotics. As a result, the electrical conductance is accordingly modulated by these surface net charge changes. The switching mechanism of sensor proteins attached at the functionalized surfaces and releasing them again by antibiotics is demonstrated. With the here presented device the detection limit is below the limits of prevailing detection methods. Moreover, the study is extended to detect antibiotic residues in spiked organic milk from cows far below the maximum residual level of the European Union. In spiked milk samples a detection limit for tetracycline concentrations in the 100 fM level was achieved. The nanowall devices are fabricated by atomic layer deposition-based spacer lithography on full wafer scale which is a simple approach capable for mass production.
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Affiliation(s)
- Andreas Menzel
- Department of Microsystems Engineering - IMTEK, University of Freiburg, Germany.
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