Improved current extraction from ZnO/PbS quantum dot heterojunction photovoltaics using a MoO3 interfacial layer

Stable PbS colloidal quantum dot inks enable blade-coating infrared solar cells

Infrared solar cells are more effective than normal bandgap solar cells at reducing the spectral loss in the near-infrared region, thus also at broadening the absorption spectra and improving power conversion efficiency. PbS colloidal quantum dots (QDs) with tunable bandgap are ideal infrared photovoltaic materials. However, QD solar cell production suffers from small-area-based spin-coating fabrication methods and unstable QD ink. Herein, the QD ink stability mechanism was fully investigated according to Lewis acid-base theory and colloid stability theory. We further studied a mixed solvent system using dimethylformamide and butylamine, compatible with the scalable manufacture of method-blade coating. Based on the ink system, 100 cm2 of uniform and dense near-infrared PbS QDs (~ 0.96 eV) film was successfully prepared by blade coating. The average efficiencies of above absorber-based devices reached 11.14% under AM1.5G illumination, and the 800 nm-filtered efficiency achieved 4.28%. Both were the top values among blade coating method based devices. The newly developed ink showed excellent stability, and the device performance based on the ink stored for 7 h was similar to that of fresh ink. The matched solvent system for stable PbS QD ink represents a crucial step toward large area blade coating photoelectric devices.

Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids

Heavy-metal-free III-V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. We study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm-2, a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm-2).

Colloidal Ag2Se intraband quantum dots

With the emergence of the Internet of Things, wearable electronics, and machine vision, the exponentially growing demands for miniaturization, energy efficiency, and cost-effectiveness have imposed critical requirements on the size, weight, power consumption and cost (SWaP-C) of infrared detectors. To meet this demand, new sensor technologies that can reduce the fabrication cost associated with semiconductor epitaxy and remove the stringent requirement for cryogenic cooling are under active investigation. In the technologically important spectral region of mid-wavelength infrared, intraband colloidal quantum dots are currently at the forefront of this endeavor, with wafer-scale monolithic integration and Auger suppression being the key material capabilities to minimize the sensor's SWaP-C. In this Feature Article, we provide a focused review on the development of sensors based on Ag2Se intraband colloidal quantum dots, a heavy metal-free colloidal nanomaterial that has merits for wide-scale adoption in consumer and industrial sectors.

Optical engineering of PbS colloidal quantum dot solar cells via Fabry-Perot resonance and distributed Bragg reflectors

A tradeoff between light absorption and charge transport is a well-known issue in PbS colloidal quantum dot (CQD) solar cells because the carrier diffusion length in PbS CQD films is comparable to the thickness of CQD film. We reduce the tradeoff between light absorption and charge transport by combining a Fabry-Perot (FP) resonator and a distributed Bragg reflector (DBR). A FP resonance is formed between the DBR and a dielectric-metal-dielectric film as a top transparent electrode. A SiO₂-TiO₂ multilayer is used to form a DBR. The FP resonance enhances light absorption near the resonant wavelength of the DBR without changing the CQD film thickness. The light absorption near the FP resonance wavelength is further boosted by coupling the FP resonance with the high reflectivity of the Ag-coated DBR. When the FP resonance and DBR are combined, the power conversion efficiency (PCE) of PbS CQD solar cells increases by 54%. Moreover, the DBR assisted FP resonance enables a very thin PbS layer to absorb near infrared light four times more. The overall PCE of the thin PbS CQD solar cell increases by 24% without sacrificing the average visible transmittance (AVT). Our results show how to overcome the inherence problem of the CQD and develop a semi-transparent solar cell where the wavelength-selective absorption and the transparency for visible light are important.

Large-area flexible colloidal-quantum-dot infrared photodiodes for photoplethysmogram signal measurements

Epitaxially grown photodiodes are the foundation of infrared photodetection technology; however, their rigid structure and limited area scaling limit their use in advanced applications. Colloidal-quantum-dot (CQD) infrared photodiodes have increased active areas through solution processing, and are thus potential candidates for large-area flexible photodetection, but these large-area photodiodes have disadvantages such as large dark current density, poor homogeneity, and poor stability. Therefore, this study established a fabrication strategy for large-area flexible CQD photodiodes that involves introducing polyimide to CQD ink to improve CQD passivation, monodisperse ink persistence, and film morphology. The resulting CQD photodiodes exhibited reduced dark current density and improved homogeneity and work stability. Furthermore, the as-prepared photodiodes exhibited a detectivity (D*) of greater than 10¹³ Jones, which was higher than other reported CQD photodetectors. The CQD photodiodes developed in this study can be used for wearable photoplethysmogram (PPG) signal measurement under ambient light at reduced cost and power consumption..

Improving the photovoltaic performance for PbS QD thin film solar cells through interface engineering

Interfaces exist between functional layers inside thin film optoelectronic devices, and it is very important to minimize the energy loss when electrons move across the interfaces to improve the photovoltaic performance. For PbS quantum dots (QDs) solar cells with the classical n-i-p device architecture, it is particularly challenging to tune the electron transfer process due to limited material choices for each functional layer. Here, we introduce materials to tune the electron transfer across the three interfaces inside the PbS-QD solar cell: (1) the interface between the ZnO electron transport layer and the n-type iodide capped PbS QD layer (PbS-I QD layer), (2) the interface between the n-type PbS-I layer and the p-type 1,2-ethanedithiol (EDT) treated PbS QD layer (PbS-EDT QD layer), (3) the interface between the PbS-EDT layer and the Au electrode. After passivating the ZnO layer through APTES treating; tuning the band alignment through varying the QD size of PbS -EDT QD layer and a carbazole layer to tune the hole transport process, a power conversion efficiency of 9.23% (V_oc of 0.62 V) under simulated AM1.5 sunlight is demonstrated for PbS QD solar cells. Our results highlights the profound influence of interface engineering on the electron transfer inside the PbS QD solar cells, exemplified by its impact on the photovoltaic performance of PbS QD devices.

Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-Area Fabrication

Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, allowing for technology-leading materials such as high purity color centers in display technology. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the urgent necessity toward carbon neutrality, electricity from solar photovoltaics will play a large role in the power generation sector. QDs are developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics with various innovative deposition properties which can lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology can become a better candidate for practical application. In this article, the authors show how the possibilities of different deposition techniques can bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.

Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells

Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.

Enhanced Infrared Photodiodes Based on PbS/PbClx Core/Shell Nanocrystals

Improved passivation strategies to address the more complex surface structure of large-diameter nanocrystals are critical to the advancement of infrared photodetectors based on colloidal PbS. In this contribution, the performance of short-wave infrared (SWIR) photodiodes fabricated with PbS/PbCl_x (core/shell) nanocrystals vs their PbS-only (core) counterparts are directly compared. Devices using PbS cores suffer from shunting and inefficient charge extraction, while core/shell-based devices exhibit greater external quantum efficiencies and lower dark current densities. To elucidate the implications of the shell chemistry on device performance, thickness-dependent energy level offsets and interfacial chemistry of nanocrystal films with the zinc oxide electron-transport layer are evaluated. The disparate device performance between the two synthetic methods is attributed to unfavorable interface dipole formation and surface defect states, associated with inadequate removal of native organic ligands in core-only films. The core/shell system offers a promising route to manage the additional nonpolar (100) surface facets of larger nanocrystals that conventional halide ligand treatments fail to sufficiently passivate.

Midwavelength Infrared p-n Heterojunction Diodes Based on Intraband Colloidal Quantum Dots

As an emerging member of the colloidal semiconductor quantum dot materials family, intraband quantum dots are being extensively studied for thermal infrared sensing applications. High-performance detectors can be realized using a traditional p-n junction device design; however, the heavily doped nature of intraband quantum dots presents a new challenge in realizing diode devices. In this work, we utilize a trait uniquely available in a colloidal quantum dot material system to overcome this challenge: the ability to blend two different types of quantum dots to control the electrical property of the resulting film. We report on the preparation of binary mixture films containing midwavelength infrared Ag₂Se intraband quantum dots and the fabrication of p-n heterojunction diodes with strong rectifying characteristics. The peak specific detectivity at 4.5 μm was measured to be 10⁷ Jones at room temperature, which is an orders of magnitude improvement compared to the previous generation of intraband quantum dot detectors.

Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells

Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (V_oc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high V_oc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the V_oc loss is first analyzed via detailed balance theory and the origin of V_oc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the V_oc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the V_oc loss are summarized. Finally, various strategies are discussed to reduce interface V_oc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.

Star-shaped colloidal PbS nanocrystals: structural evolution and growth mechanism

Branched nanostructures have attracted considerable interest due to their large surface-to-volume ratio with benefits in photocatalysis and photovoltaic applications. Here we discuss the tailoring of branched structures with a shape of a star based on PbS semiconductor. It exposes the reaction mechanism and the controlling factors that template their morphology. For this purpose, we varied the primary lead precursors, types of surfactant, lead-to-surfactant molar ratio, temperature and duration of the reaction. Furthermore, intermediate products in a growth reaction were thoroughly examined using X-ray diffraction, transmission electron microscopy, Raman scattering, optical absorbance and Fourier transform infrared spectroscopy. The results designated a primary formation of truncated octahedral seeds with terminating {100} and {111} facets, followed by the selective fast growth of pods along the 〈100〉 directions toward the development of a star-like shape. The examined intermediates possess a cubic rock salt structure. The observations indicated that small surfactant molecules (e.g. acetate) evolve the branching process, while long-chain surfactants (e.g. oleate) stabilize the long pods as well as mitigate the aggregation process. This study conveys fundamental knowledge for the design of other branched structures, that are attractive for practical use in catalysis, electrochemistry and light-harvesting.

Tailoring of branched structures in the shape of stars based on PbS semiconductor, revealing the reaction mechanism and controlling factors that dictate their morphology and associated optical properties.

Fabrication and comparison of Heterojunction solar cells from CdS/PbS nanoparticles and CdS/PbS bulk

PbS nanoparticles and CdS nanoparticles are grown by chemical methods. Also bulk PbS is grown by simple chemical methods without using any capping agent. The material formation is identified from XRD.TEM image shows the formation of different shaped PbS nanoparticles, CdS nanoparticles, and bulk PbS. Three different heterojunction solar cells are fabricated by CdS and PbS samples using a spin coating technique. Finally, gold is evaporated on PbS film. Current-voltage characteristics data for three heterojunction solar cells are taken under dark and illumination conditions. For each fabricated solar cell open-circuit voltage (VOC), short circuit current density (ISC), fill factor (FF), and power conversion efficiency( ῃ ) are measured. Finally, a comparison of the characteristics is done for different fabricated heterojunction solar cells.

Material and device engineering for high-performance blue quantum dot light-emitting diodes

Colloidal quantum dots (QDs) have attracted extensive attention due to their excellent optoelectronic properties, such as high quantum efficiency, narrow emission peaks, high color saturation, high stability and solution processability. Compared with the traditional display technology, QD based light-emitting diodes (QLEDs) show broad application prospects in the field of flat-panel displays and solid-state lighting. However, for full-color displays, the efficiency and lifetime of blue QLEDs are inferior to those of their green and red counterparts. Therefore, it is urgent for us to deeply understand the device physics and improve the performance of blue QLEDs through material and device engineering. An in-depth understanding of the optoelectronic properties (such as the structure of electronic states, electron-phonon interactions, Auger processes, etc.) and material engineering (such as size distribution control, composition control, and surface engineering) of blue emission QDs is greatly helpful for their applications in other fields. Herein, we review the key progress in the area of blue QLEDs, including the compositions and nanostructures of blue quantum dots, advances in the device architectures and the improvement of the device lifetime of blue QLEDs. The key factors that influence the blue device performance, including the nanostructure design and surface modification of QDs, interface engineering and architecture design of devices are discussed, aiming to propose possible solutions for these challenges, which will help to promote the commercialization process of QLEDs.

Nanocrystals of Lead Chalcohalides: A Series of Kinetically Trapped Metastable Nanostructures

We report the colloidal synthesis of a series of surfactant-stabilized lead chalcohalide nanocrystals. Our work is mainly focused on Pb4S3Br2, a chalcohalide phase unknown to date that does not belong to the ambient-pressure PbS-PbBr2 phase diagram. The Pb4S3Br2 nanocrystals herein feature a remarkably narrow size distribution (with a size dispersion as low as 5%), a good size tunability (from 7 to ∼30 nm), an indirect bandgap, photoconductivity (responsivity = 4 ± 1 mA/W), and stability for months in air. A crystal structure is proposed for this new material by combining the information from 3D electron diffraction and electron tomography of a single nanocrystal, X-ray powder diffraction, and density functional theory calculations. Such a structure is closely related to that of the recently discovered high-pressure chalcohalide Pb4S3I2 phase, and indeed we were able to extend our synthesis scheme to Pb4S3I2 colloidal nanocrystals, whose structure matches the one that has been published for the bulk. Finally, we could also prepare nanocrystals of Pb3S2Cl2, which proved to be a structural analogue of the recently reported bulk Pb3Se2Br2 phase. It is remarkable that one high-pressure structure (for Pb4S3I2) and two metastable structures that had not yet been reported (for Pb4S3Br2 and Pb3S2Cl2) can be prepared on the nanoscale by wet-chemical approaches. This highlights the important role of colloidal chemistry in the discovery of new materials and motivates further exploration into metal chalcohalide nanocrystals.

Type-II Heterostructure of ZnO and Carbon Dots Demonstrates Enhanced Photoanodic Performance in Photoelectrochemical Water Splitting

Hydrogen evolution through ecofriendly photoelectrochemical (PEC) water splitting is considered to be one of the most cost-effective and desirable methods for meeting ever-growing energy demands. However, the low photoconversion efficiency limits the practical applicability of PEC water splitting. To develop an efficient photoelectrode, here the morphology of ZnO is tuned from 0D to 3D. It is observed that vertically grown 2D nanosheets outperform other morphologies in PEC water splitting by generating nearly 0.414 mA cm^-2 at 0 V vs Ag/AgCl. Furthermore, these perpendicularly developed 2D nanosheets of ZnO are sensitized by metal-free carbon (C) dots to improve the photoconversion efficiency of ZnO. The prepared ZnO/C dots work as an effective photoanode, which can produce a 0.831 mA cm^-2 photocurrent density upon application of 0 V vs Ag/AgCl under constant illumination, which is 2 times higher than that of bare ZnO. The enhanced PEC performance of ZnO/C dots is confirmed by the photoconversion efficiency (η). The ZnO/C dots exhibit a 2-fold-higher photoconversion efficiency (η) compared to that of ZnO. Additionally, the enhancement in PEC activity of ZnO/C dots is attributed to the higher carrier concentrations in the heterostructure. Bare ZnO has a 1.77 × 10²⁰ cm^-3 carrier density, which becomes 3.70 × 10²⁰ cm^-3 after sensitization with C dots. Enhanced carrier density successively leads to higher PEC water splitting efficiency. Band alignments of ZnO and C dots indicate the creation of the type-II heterostructure, which facilitates successful charge transportation among C dots and ZnO, producing a charge-carrier separation. Two-dimensional sheets of ZnO and ZnO/C dots exhibit appreciable stability under continuous illumination for 1 and 2 h, respectively.

Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand

The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.

Cascade surface modification of colloidal quantum dot inks enables efficient bulk homojunction photovoltaics

Control over carrier type and doping levels in semiconductor materials is key for optoelectronic applications. In colloidal quantum dots (CQDs), these properties can be tuned by surface chemistry modification, but this has so far been accomplished at the expense of reduced surface passivation and compromised colloidal solubility; this has precluded the realization of advanced architectures such as CQD bulk homojunction solids. Here we introduce a cascade surface modification scheme that overcomes these limitations. This strategy provides control over doping and solubility and enables n-type and p-type CQD inks that are fully miscible in the same solvent with complete surface passivation. This enables the realization of homogeneous CQD bulk homojunction films that exhibit a 1.5 times increase in carrier diffusion length compared with the previous best CQD films. As a result, we demonstrate the highest power conversion efficiency (13.3%) reported among CQD solar cells.

Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices

The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.

Enhancement in the performance of nanostructured CuO–ZnO solar cells by band alignment

In this study, we investigated the effect of cobalt doping on band alignment and the performance of nanostructured ZnO/CuO heterojunction solar cells. ZnO nanorods and CuO nanostructures were fabricated by a low-temperature and cost-effective chemical bath deposition technique. The band offsets between Zn_1−xCo_xO (x = 0, 0.05, 0.10, 0.15, and 0.20) and CuO nanostructures were estimated using X-ray photoelectron spectroscopy and it was observed that the reduction of the conduction band offset with CuO. This also results in an enhancement in the open-circuit voltage. It was demonstrated that an optimal amount of cobalt doping could effectively passivate the ZnO related defects, resulting in a suitable conduction band offset, suppressing interface recombination, and enhancing conductivity and mobility. The capacitance–voltage analysis demonstrated the effectiveness of cobalt doping on enhancing the depletion width and built-in potential. Through impedance spectroscopy analysis, it was shown that recombination resistance increased up to 10% cobalt doping, thus decreased charge recombination at the interface. Further, it was demonstrated that the insertion of a thin layer of molybdenum oxide (MoO₃) between the active layer (CuO) and the gold electrode hinders the formation of a Schottky junction and improved charge extraction at the interface. The ZnO/CuO solar cells with 10% cobalt doped ZnO and 20 nm thick MoO₃ buffer layer achieved the best power conversion efficiency of 2.11%. Our results demonstrate the crucial role of the band alignment on the performance of the ZnO/CuO heterojunction solar cells and could pave the way for further progress on improving conversion efficiency in oxide-based heterojunction solar cells.

Nanostructured ZnO/CuO photovoltaic cell with power conversion efficiency of 2.11%.

Improving Charge Collection from Colloidal Quantum Dot Photovoltaics by Single-Walled Carbon Nanotube Incorporation

Improving charge collection is one of the key issues for high-performance PbS colloidal quantum dot photovoltaics (CQDPVs) due to the considerable charge loss resulting from the low mobility and large defect densities of the 1,2-ethanedithiol-treated PbS quantum dot hole-transporting layer (HTL). To overcome these limitations, single-walled carbon nanotubes (SWNTs) and C₆₀-encapsulated SWNTs (C₆₀@SWNTs) are incorporated into the HTL in CQDPVs. SWNT-incorporated CQDPV demonstrates a significantly improved short-circuit current density (J_SC), and C₆₀@SWNT-incorporated CQDPV exhibits an even higher J_SC than that of pristine SWNT. Both result in improved power-conversion efficiencies. Hole-selective, photoinduced charge extraction with linearly increasing voltage measurements demonstrates that SWNT or C₆₀@SWNT incorporation improves hole-transporting behavior, rendering suppressed charge recombination and enhanced mobility of the HTL. The enhanced p-type characteristics and the improved hole diffusion lengths of SWNT- or C₆₀@SWNT-incorporated HTL bring improvement of the entire hole-transporting length and enable lossless hole collection, which results in the J_SC enhancement of the CQDPVs.

Efficient, Stable, and Low-Cost PbS Quantum Dot Solar Cells with Cr-Ag Electrodes

PbS quantum dots (QDs) are a promising nanostructured material for solar cells. However, limited works have been done to explore the active layer thickness, layer deposition techniques, stability improvement, and cost reduction for PbS QD solar cells. We address those issues of device fabrication herein and suggest their possible solutions. In our work, to get the maximum current density from a PbS QD solar cell, we estimated the optimized active layer thickness using Matlab simulation. After that, we fabricated a high-performance and low-cost QD photovoltaic (PV) device with the simulated optimized active layer thickness. We implemented this low-cost device using a 10 mg/mL PbS concentration. Here, spin coating and drop-cast layer deposition methods were used and compared. We found that the device prepared by the spin coating method was more efficient than that by the drop cast method. The spin-coated PbS QD solar cell provided 6.5% power conversion efficiency (PCE) for the AM1.5 light spectrum. Besides this, we observed that Cr (chromium) interfaced with the Ag (Cr–Ag) electrode can provide a highly air-stable electrode.

All-Inorganic Red-Light Emitting Diodes Based on Silicon Quantum Dots

We report herein an all-inorganic quantum dot light emitting diode (QLED) where an optically active layer of crystalline silicon (Si) is mounted. The prototype Si-QLED has an inverted device architecture of ITO/ZnO/QD/WO3/Al multilayer, which was prepared by a facile solution process. The QLED shows a red electroluminescence, an external quantum efficiency (EQE) of 0.25%, and luminance of 1400 cd/m2. The device performance stability has been investigated when the device faces different humidity conditions without any encapsulation. The advantage of using all inorganic layers is reflected in stable EQE even after prolonged exposure to harsh conditions.

High-Speed Colloidal Quantum Dot Photodiodes via Accelerating Charge Separation at Metal-Oxide Interface

With ever-growing technological demands in the imaging sensor industry for autonomous driving and augmented reality, developing sensors that can satisfy not only image resolution but also the response speed becomes more challenging. Herein, the focus is on developing a high-speed photosensor capable of obtaining high-resolution, high-speed imaging with colloidal quantum dots (QDs) as the photosensitive material. In detail, high-speed QD photodiodes are demonstrated with rising and falling times of τ_r = 28.8 ± 8.34 ns and τ_f = 40 ± 9.81 ns, respectively, realized by fast separation of electron-hole pairs due to the action of internal electric field at the QD interface, mainly by the interaction between metal oxide and the QD's ligands. Such energy transfer relations are analyzed and interpreted with time-resolved photoluminescence measurements, providing physical understanding of the device and working principles.

Fully Printed Infrared Photodetectors from PbS Nanocrystals with Perovskite Ligands

Colloidal nanocrystals from PbS are successfully applied in highly sensitive infrared photodetectors with various device architectures. Here, we demonstrate all-printed devices with high detectivity (∼10¹² cm Hz^1/2/W) and a cut-off frequency of >3 kHz. The low material consumption (<0.3 mg per detector) and short processing time (14 s per detector) enabled by the automated printing promises extremely low device costs. To enable all-printed devices, an ink formulation was developed based on nanocrystals stabilized by perovskite-like methylammonium iodobismuthate ligands, which are dispersed in a ternary solvent. Fully inkjet printed devices based on this solvent were achieved with printed silver electrodes and a ZnO interlayer. Considerable improvements were obtained by the addition of small amounts of the polymer poly(vinylpyrrolidone) to the ink. The polymer improved the colloidal stability of the ink and its film-formation properties and thus enabled the scalable printing of single detectors and detector arrays. While photoconductors were shown here, the developed ink will certainly find application in a series of further electronic devices based on nanocrystals from a broad range of materials.

Quantum Dot Solar Cells: Small Beginnings Have Large Impacts

From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.

V2O5 as Hole Transporting Material for Efficient All Inorganic Sb2S3 Solar Cells

This research demonstrates that V₂O₅ is able to serve as hole transporting material to substitute organic transporting materials for Sb₂S₃ solar cells, offering all inorganic solar cells. The V₂O₅ thin film is prepared by thermal decomposition of spin-coated vanadium(V) triisopropoxide oxide solution. Mechanistic investigation shows that heat treatment of V₂O₅ layer has crucial influence on the power conversion efficiency of device. Low temperature annealing is unable to remove the organic molecules that increases the charge transfer resistance, while high temperature treatment leads to the increase of work function of V₂O₅ that blocks hole transporting from Sb₂S₃ to V₂O₅. Electrochemical and compositional characterizations show that the interfacial contact of V₂O₅/Sb₂S₃ can be essentially improved with appropriate annealing. The optimized power conversion efficiency of device based on Sb₂S₃/V₂O₅ heterojunction reaches 4.8%, which is the highest power conversion efficiency in full inorganic Sb₂S₃-based solar cells with planar heterojunction solar cells. Furthermore, the employment of V₂O₅ as hole transporting material leads to significant improvement in moisture stability compared with the device based organic hole transporting material. Our research provides a material choice for the development of full inorganic solar cells based on Sb₂S₃, Sb₂(S,Se)₃, and Sb₂Se₃.

Energy Level Alignment of Molybdenum Oxide on Colloidal Lead Sulfide (PbS) Thin Films for Optoelectronic Devices

Interfacial charge transport in optoelectronic devices is dependent on energetic alignment that occurs via a number of physical and chemical mechanisms. Herein, we directly connect device performance with measured thickness-dependent energy-level offsets and interfacial chemistry of 1,2-ethanedithiol-treated lead sulfide (PbS) quantum dots and molybdenum oxide. We show that interfacial energetic alignment results from partial charge transfer, quantified via the chemical ratios of Mo⁵⁺ relative to Mo⁶⁺. The combined effect mitigates leakage current in both the dark and the light, relative to a metal contact, with an overall improvement in open circuit voltage, fill factor, and short circuit current.

Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell

The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%.

Formamidinium-based planar heterojunction perovskite solar cells with alkali carbonate-doped zinc oxide layer

We herein demonstrate n-i-p-type planar heterojunction perovskite solar cells employing spin-coated ZnO nanoparticles modified with various alkali metal carbonates including Li₂CO₃, Na₂CO₃, K₂CO₃ and Cs₂CO₃, which can tune the energy band structure of ZnO ETLs. Since these metal carbonates doped on ZnO ETLs lead to deeper conduction bands in the ZnO ETLs, electrons are easily transported from the perovskite active layer to the cathode electrode. The power conversion efficiency of about 27% is improved due to the incorporation of alkali carbonates in ETLs. As alternatives to TiO₂ and n-type metal oxides, electron transport materials consisting of doped ZnO nanoparticles are viable ETLs for efficient n-i-p planar heterojunction solar cells, and they can be used on flexible substrates via roll-to-roll processing.

Planar formamidinium perovskite solar cells have been fabricated with an alkali carbonate-doped zinc oxide layer.

Measuring the Electronic Structure of Nanocrystal Thin Films Using Energy-Resolved Electrochemical Impedance Spectroscopy

Use of nanocrystal thin films as active layers in optoelectronic devices requires tailoring of their electronic band structure. Here, we demonstrate energy-resolved electrochemical impedance spectroscopy (ER-EIS) as a method to quantify the electronic structure in nanocrystal thin films. This technique is particularly well-suited for nanocrystal-based thin films as it allows for in situ assessment of electronic structure during solution-based deposition of the thin film. Using well-studied lead sulfide nanocrystals as an example, we show that ER-EIS can be used to probe the energy position and number density of defect or dopant states as well as the modification of energy levels in nanocrystal solids that results through the exchange of surface ligands. This work highlights that ER-EIS is a sensitive and fast method to measure the electronic structure of nanocrystal thin films and enables their optimization in optoelectronic devices.

Infrared Solution-Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and Jsc in Excess of 34 mA cm-2

Developing low-cost photovoltaic absorbers that can harvest the short-wave infrared (SWIR) part of the solar spectrum, which remains unharnessed by current Si-based and perovskite photovoltaic technologies, is a prerequisite for making high-efficiency, low-cost tandem solar cells. Here, infrared PbS colloidal quantum dot (CQD) solar cells employing a hybrid inorganic-organic ligand exchange process that results in an external quantum efficiency of 80% at 1.35 µm are reported, leading to a short-circuit current density of 34 mA cm^-2 and a power conversion efficiency (PCE) up to 7.9%, which is a current record for SWIR CQD solar cells. When this cell is placed at the back of an MAPbI₃ perovskite film, it delivers an extra 3.3% PCE by harnessing light beyond 750 nm.

Fine-Tuned Multilayered Transparent Electrode for Highly Transparent Perovskite Light-Emitting Devices

The high photoluminescence quantum yield, wide color tunability and narrow bandwidth of perovskite nanocrystals make them favorable for light source and display applications. Here, highly transparent green-light-emitting devices (LEDs) using inorganic cesium lead halide perovskite nanocrystal films as the emissive layer are reported. The effect of multilayered nanostructured transparent electrode on optical properties and performance within the LEDs is investigated by fine tuning layer thickness. The results show that the light transmission in visible region can be enhanced with this nanostructured film. These LEDs exhibited a high transmittance (average 73% over 400-700 nm) and high brightness of 2640 and 1572 cd m-2 for indium-doped tin oxide (ITO) cathode and MoO x /Au/MoO x anode sides, respectively.

Minority Carrier Transport in Lead Sulfide Quantum Dot Photovoltaics

Lead sulfide quantum dots (PbS QDs) are an attractive material system for the development of low-cost photovoltaics (PV) due to their ease of processing and stability in air, with certified power conversion efficiencies exceeding 11%. However, even the best PbS QD PV devices are limited by diffusive transport, as the optical absorption length exceeds the minority carrier diffusion length. Understanding minority carrier transport in these devices will therefore be critical for future efficiency improvement. We utilize cross-sectional electron beam-induced current (EBIC) microscopy and develop methodology to quantify minority carrier diffusion length in PbS QD PV devices. We show that holes are the minority carriers in tetrabutylammonium iodide (TBAI)-treated PbS QD films due to the formation of a p-n junction with an ethanedithiol (EDT)-treated QD layer, whereas a heterojunction with n-type ZnO forms a weaker n⁺-n junction. This indicates that modifying the standard device architecture to include a p-type window layer would further boost the performance of PbS QD PV devices. Furthermore, quantitative EBIC measurements yield a lower bound of 110 nm for the hole diffusion length in TBAI-treated PbS QD films, which informs design rules for planar and ordered bulk heterojunction PV devices. Finally, the low-energy EBIC approach developed in our work is generally applicable to other emerging thin-film PV absorber materials with nanoscale diffusion lengths.

Improvement of Photovoltaic Performance of Colloidal Quantum Dot Solar Cells Using Organic Small Molecule as Hole-Selective Layer

A novel organic small molecule bis-triphenylamine with spiro(fluorene-9,9'-xanthene) as the conjugated system, named BTPA-4, is successfully synthesized and employed as the hole-selective layer (HSL) in colloidal quantum dots solar cells (CQDSCs). The introduction of BTPA-4 layer can significantly prolong effective carrier lifetime (τ_eff), increase charge recombination resistance (R_rec), and thus diminish the interfacial charge recombination at the PbS-QDs/Au electrode interface. The effect of BTPA-4 as HSL in the device performance is especially significant for the open-circuit voltage (V_oc) and power conversion efficiency (PCE), with a ∼ 10% and 15% enhancement respectively, comparing with those of device without the HSL. Furthermore, the PbS CQDSCs with BTPA-4 possessed a noticeably stable property for over 100 days of storage under ambient atmosphere.

Understanding chemically processed solar cells based on quantum dots

Photovoltaic energy conversion is one of the best alternatives to fossil fuel combustion. Petroleum resources are now close to depletion and their combustion is known to be responsible for the release of a considerable amount of greenhouse gases and carcinogenic airborne particles. Novel third-generation solar cells include a vast range of device designs and materials aiming to overcome the factors limiting the current technologies. Among them, quantum dot-based devices showed promising potential both as sensitizers and as colloidal nanoparticle films. A good example is the p-type PbS colloidal quantum dots (CQDs) forming a heterojunction with a n-type wide-band-gap semiconductor such as TiO2 or ZnO. The confinement in these nanostructures is also expected to result in marginal mechanisms, such as the collection of hot carriers and generation of multiple excitons, which would increase the theoretical conversion efficiency limit. Ultimately, this technology could also lead to the assembly of a tandem-type cell with CQD films absorbing in different regions of the solar spectrum.

Role of Defects and Surface States in the Carrier Transport and Nonlinearity of the Diode Characteristics in PbS/ZnO Quantum Dot Solar Cells

The roles of bulk surface states and interfacial defects are probed experimentally using a combination of current-voltage, capacitance-voltage, and impedance measurements. The critical importance of the quality of both the film and interfaces is evident in current-voltage measurements where shunting and interface states result in large dark currents and the subsequent loss of J_sc. These properties are shown to be critically related to the nature and role of the PbS QD interface with the (nominally) ohmic gold contact. Specifically, the nonideality of this interface results in the formation of an electric field and therefore a Schottky barrier that opposes the transport of carriers across the conventional ZnO-PbS CQD system. Nonidealities in the structure and absorber layer are also reflected in nonmonotonic behavior and dispersion in C-V measurements with trapping processes on the CQD surfaces, and the ZnO/PbS and PbS/Au interfaces also affecting the carrier dynamics, which is reflected in the response time of these systems under different biases.

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

Dry-Deposited Transparent Carbon Nanotube Film as Front Electrode in Colloidal Quantum Dot Solar Cells

Single-walled carbon nanotubes (SWCNTs) show great potential as an alternative material for front electrodes in photovoltaic applications, especially for flexible devices. In this work, a press-transferred transparent SWCNT film was utilized as front electrode for colloidal quantum dot solar cells (CQDSCs). The solar cells were fabricated on both glass and flexible substrates, and maximum power conversion efficiencies of 5.5 and 5.6 %, respectively, were achieved, which corresponds to 90 and 92 % of an indium-doped tin oxide (ITO)-based device (6.1 %). The SWCNTs are therefore a very good alternative to the ITO-based electrodes especially for flexible solar cells. The optical electric field distribution and optical losses within the devices were simulated theoretically and the results agree with the experimental results. With the optical simulations that were performed it may also be possible to enhance the photovoltaic performance of SWCNT-based solar cells even further by optimizing the device configuration or by using additional optical active layers, thus reducing light reflection of the device and increasing light absorption in the quantum dot layer.

Improving the Performance of PbS Quantum Dot Solar Cells by Optimizing ZnO Window Layer

Comparing with hot researches in absorber layer, window layer has attracted less attention in PbS quantum dot solar cells (QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so on. Herein, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V _oc of 18%, J _sc of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.

Solid-state colloidal CuInS2 quantum dot solar cells enabled by bulk heterojunctions

Colloidal copper indium sulfide (CIS) nanocrystals (NCs) are Pb- and Cd-free alternatives for use as absorbers in quantum dot solar cells. In a heterojunction with TiO₂, non-annealed ligand-exchanged CIS NCs form solar cells yielding a meager power conversion efficiency (PCE) of 0.15%, with photocurrents plummeting far below predicted values from absorption. Decreasing the amount of zinc during post-treatment leads to improved mobility but marginal improvement in device performance (PCE = 0.30%). By incorporating CIS into a porous TiO₂ network, we saw an overall drastic improvement in device performance, reaching a PCE of 1.16%, mainly from an increase in short circuit current density (J_sc) and fill factor (FF) and a 10-fold increase in internal quantum efficiency (IQE). We have determined that by moving from a bilayer to a bulk heterojunction architecture, we have reduced the trap-assisted recombination as seen in changes in the ideality factor, the intensity dependence of the photocurrent and transient photocurrent (TPC) and photovoltage (TPV) characteristics.

Influence of External Pressure on the Performance of Quantum Dot Solar Cells

We report the influence of post-treatment via the external pressure on the device performance of quantum dot (QD) solar cells. The structural analysis together with optical and electrical characterization on QD solids reveal that the external pressure compacts QD active layers by removing the mesoscopic voids and enhances the charge carrier transport along QD solids, leading to significant increase in JSC of QD solar cells. Increasing the external pressure, by contrast, accompanies reduction in FF and VOC, yielding the trade-off relationship among JSC and FF and VOC in PCE of devices. Optimization at the external pressure in the present study at 1.4-1.6 MPa enables us to achieve over 10% increase in PCE of QD solar cells. The approach and results show that the control over the organization of QDs is the key for the charge transport properties in ensemble and also offer simple yet effective mean to enhance the electrical performance of transistors and solar cells using QDs.

Observation of Considerable Upconversion Enhancement Induced by Cu2-xS Plasmon Nanoparticles

Localized surface plasmon resonances (LSPRs) are achieved in heavily doped semiconductor nanoparticles (NPs) with appreciable free carrier concentrations. In this paper, we present the photonic, electric, and photoelectric properties of plasmonic Cu2-xS NPs/films and the utilization of LSPRs generated from semiconductor NPs as near-infrared antennas to enhance the upconversion luminescence (UCL) of NaYF4:Yb(3+),Er(3+) NPs. Our results suggest that the LSPRs in Cu2-xS NPs originate from ligand-confined carriers and that a heat treatment resulted in the decomposition of ligands and oxidation of Cu2-xS NPs; these effects led to a decrease of the Cu(2+)/Cu(+) ratio, which in turn resulted in the broadening, decrease in intensity, and red-shift of the LSPRs. In the presence of a MoO3 spacer, the UCL intensity of NaYF4:Yb(3+),Er(3+) NPs was substantially improved and exhibited extraordinary power-dependent behavior because of the energy band structure of the Cu2-xS semiconductor. These findings provide insights into the nature of LSPR in semiconductors and their interaction with nearby emitters and highlight the possible application of LSPR in photonic and photoelectric devices.

Photovoltaic Performance of PbS Quantum Dots Treated with Metal Salts

Recent advances in quantum dot surface passivation have led to a rapid development of high-efficiency solar cells. Another critical element for achieving efficient power conversion is the charge neutrality of quantum dots, as charge imbalances induce electronic states inside the energy gap. Here we investigate how the simultaneous introduction of metal cations and halide anions modifies the charge balance and enhances the solar cell efficiency. The addition of metal salts between QD deposition and ligand exchange with 1,3-BDT results in an increase in the short-circuit current and fill factor, accompanied by a distinct reduction in a crossover between light and dark current density-voltage characteristics.

Highly Asymmetric n(+)-p Heterojunction Quantum-Dot Solar Cells with Significantly Improved Charge-Collection Efficiencies

The depletion region width of metal-oxide/quantum-dot (QD) heterojunction solar cells is increased by a new method in which heavily boron-doped n(+)-ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n-ZnO, and provides 41% and 37% improvement of J(sc) (16.7 mA cm(-2) to 23.5 mA cm(-2) ) and power conversion efficiency (5.52% to 7.55%), respectively.