Effective passivation of exfoliated black phosphorus transistors against ambient degradation

High-Performance Sub-10 nm Two-Dimensional SbSeBr Transistors through Transport Orientation

Exploring two-dimensional (2D) materials with a small carrier effective mass and suitable band gap is crucial for the design of metal oxide semiconductor field effect transistors (MOSFETs). Here, the quantum transport properties of stable 2D SbSeBr are simulated on the basis of first-principles calculations. Monolayer SbSeBr proves to be a competitive channel material, offering a suitable band gap of 1.18 eV and a small electron effective mass (me*) of 0.22m0. The 2D SbSeBr field effect transistor (FET) with 8 nm channel length exhibits a high on-state current of 1869 μA/μm, low power consumption of 0.080 fJ/μm, and small delay time of 0.062 ps, which can satisfy the requirements of the International Technology Roadmap for Semiconductors for high-performance devices. Moreover, despite the monolayer SbSeBr having an isotropic me*, the asymmetrical band trends enable SbSeBr FETs to display transport orientation, which emphasizes the importance of band trends and provides valuable insights for selecting channel materials.

Harnessing Environmental Sensitivity in SnSe-Based Metal-Semiconductor-Metal Devices: Unveiling Negative Photoconductivity for Enhanced Photodetector Performance and Humidity Sensing

The extreme sensitivity of 2D-layered materials to environmental adsorbates, which is typically seen as a challenge, is harnessed in this study to fine-tune the material properties. This work investigates the impact of environmental adsorbates on electrical properties by studying metal-semiconductor-metal (MSM) devices fabricated on CVD-synthesized SnSe flakes. The freshly prepared devices exhibit positive photoconductivity (PPC), whereas they gradually develop negative photoconductivity (NPC) after being exposed to an ambient environment for ∼1 day. While the photodetectors based on positive photoconductivity exhibit a responsivity and detectivity of 6.1 A/W and 5.06 × 108 Jones, the same for the negative photoconductivity-based photodetector reaches up to 36.3 A/W and 1.49 × 109 Jones, respectively. In addition, the noise-equivalent power of the NPC photodetector decreases by 300 times as compared to the PPC device, which implies a prominent detection capability of the NPC device against weak photo signals. To substantiate the hypothesis that negative photoconductivity stems from the photodesorption of water and oxygen molecules on the dangling bonds of SnSe flakes, the flakes are etched along the most active planes (010) with a focused laser beam in an inert environment, which enhances responsivity by 43%, supporting negative photoconductivity linked to photodesorption. Furthermore, the humidity-dependent dark current variation of the NPC photodetectors is used to design a humidity sensor for human respiration monitoring with faster response and recovery times of 0.72 and 0.68 s, respectively. These findings open up the possibility of tuning the photoelectrical response of layered materials in a facile manner to develop future sensors and optoelectronic multifunctional devices.

Multicolor Inks of Black Phosphorus for Midwave-Infrared Optoelectronics

Black phosphorus (bP) based ink with a bulk bandgap of 0.33 eV (λ = 3.7 µm) has recently been shown to be promising for large-area, high performance mid-wave infrared (MWIR) optoelectronics. However, the development of multicolor bP inks expanding across the MWIR wavelength range has been challenging. Here a multicolor ink process based on bP with spectral emission tuned from 0.28 eV (λ = 4.4 µm) to 0.8 eV (λ = 1.5 µm) is demonstrated. Specifically, through the reduction of bP particle size distribution (i.e., lateral dimension and thickness), the optical bandgap systematically blueshifts, reaching up to 0.8 eV. Conversely, alloying bP with arsenic (bP1- xAsx) induces a redshift in the bandgap to 0.28 eV. The ink processed films are passivated with an infrared-transparent epoxy for stable infrared emission in ambient air. Utilizing these multicolor bP-based inks as an infrared light source, a gas sensing system is demonstrated that selectively detects gases, such as CO2 and CH4 whose absorption band varies around 4.3 and 3.3 µm, respectively. The presented ink formulation sets the stage for the advancement of multiplex MWIR optoelectronics, including spectrometers and spectral imaging using a low-cost material processing platform.

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V-1 s-1 and a memory window up to 1.3 μA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

Progress in Advanced Infrared Optoelectronic Sensors

Infrared optoelectronic sensors have attracted considerable research interest over the past few decades due to their wide-ranging applications in military, healthcare, environmental monitoring, industrial inspection, and human-computer interaction systems. A comprehensive understanding of infrared optoelectronic sensors is of great importance for achieving their future optimization. This paper comprehensively reviews the recent advancements in infrared optoelectronic sensors. Firstly, their working mechanisms are elucidated. Then, the key metrics for evaluating an infrared optoelectronic sensor are introduced. Subsequently, an overview of promising materials and nanostructures for high-performance infrared optoelectronic sensors, along with the performances of state-of-the-art devices, is presented. Finally, the challenges facing infrared optoelectronic sensors are posed, and some perspectives for the optimization of infrared optoelectronic sensors are discussed, thereby paving the way for the development of future infrared optoelectronic sensors.

Intrinsic negative Poisson's ratio of the monolayer semiconductorβ-TeO2

Monolayer semiconductors with unique mechanical responses are promising candidates for novel electromechanical applications. Here, through first-principles calculations, we discover that the monolayerβ-TeO2, a high-mobilityp-type and environmentally stable 2D semiconductor, exhibits an unusual out-of-plane negative Poisson's ratio (NPR) when a uniaxial strain is applied along the zigzag direction. The NPR originates from the unique six-sublayer puckered structure and hinge-like Te-O bonds in the 2Dβ-TeO2. We further propose that the sign of the Raman frequency change under uniaxial tensile strain could assist in determining the lattice orientation of monolayerβ-TeO2, which facilitates the experimental study of the NPR. Our results is expected to motivate further experimental and theoretical studies of the rich physical and mechanical properties of monolayerβ-TeO2.

Tunable Negative and Positive Photoconductance in Van Der Waals Heterostructure for Image Preprocessing

The processing of visual information occurs mainly in the retina, and the retinal preprocessing function greatly improves the transmission quality and efficiency of visual information. The artificial retina system provides a promising path to efficient image processing. Here, graphene/InSe/h-BN heterogeneous structure is proposed, which exhibits negative and positive photoconductance (NPC and PPC) effects by altering the strength of a single wavelength laser. Moreover, a modified theoretical model is presented based on the power-dependent photoconductivity effect of laser:I ph = - mP α 1 + nP α 2 ${\rm I}_{\rm ph}\,=\,-{\rm mP}^{\alpha _{1}} + {\rm nP}^{\alpha _{2}}$ , which can reveal the internal physical mechanism of negative/positive photoconductance effects. The present 2D structure design allows the field effect transistor (FET) to exhibit excellent photoelectric performance (RNPC = 1.1× 104 AW-1, RPPC = 13 AW-1) and performance stability. Especially, the retinal pretreatment process is successfully simulated based on the negative and positive photoconductive effects. Moreover, the pulse signal input improves the device responsivity by 167%, and the transmission quality and efficiency of the visual signal can also be enhanced. This work provides a new design idea and direction for the construction of artificial vision, and lay a foundation for the integration of the next generation of optoelectronic devices.

Gate Voltage- and Bias Voltage-Tunable Staggered-Gap to Broken-Gap Transition Based on WSe2/Ta2NiSe5 Heterostructure for Multimode Optoelectronic Logic Gate

Two-dimensional (2D) materials with superior properties exhibit tremendous potential in developing next-generation electronic and optoelectronic devices. Integrating various functions into one device is highly expected as that endows 2D materials great promise for more Moore and more-than-Moore device applications. Here, we construct a WSe2/Ta2NiSe5 heterostructure by stacking the p-type WSe2 and the n-type narrow gap Ta2NiSe5 with the aim to achieve a multifunction optoelectronic device. Owing to the large interface potential barrier, the heterostructure device reveals a prominent diode feature with a large rectify ratio (7.6 × 104) and a low dark current (10-12 A). Especially, gate voltage- and bias voltage-tunable staggered-gap to broken-gap transition is achieved on the heterostructure device, which enables gate voltage-tunable forward and reverse rectifying features. As results, the heterostructure device exhibits superior self-powered photodetection properties, including a high detectivity of 1.08 × 1010 Jones and a fast response time of 91 μs. Additionally, the intrinsic structural anisotropy of Ta2NiSe5 endows the heterostructure device with strong polarization-sensitive photodetection and high-resolution polarization imaging. Based on these characteristics, a multimode optoelectronic logic gate is realized on the heterostructure via synergistically modulating the light on/off, polarization angle, gate voltage, and bias voltage. This work shed light on the future development of constructing high-performance multifunctional optoelectronic devices.

In-plane anisotropic two-dimensional materials for twistronics

In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

Nanoscale Evaluation of the Degradation Stability of Black Phosphorus Nanosheets Functionalized with PEG and Glutathione-Stabilized Doxorubicin Drug-Loaded Gold Nanoparticles in Real Functionalized System

Two-dimensional black phosphorus (2D BP) has attracted significant research interest in the field of biomedical applications due to its unique characteristics, including high biocompatibility, impressive drug-loading efficiency, phototherapeutic ability, and minimal side effects. However, its puckered honeycomb lattice structure with lone-pair electrons of BP leads to higher sensitivity and chemical reactivity towards H2O and O2 molecules, resulting in the degradation of the structure with physical and chemical changes. In our study, we synthesize polyethylene glycol (PEG) and glutathione-stabilized doxorubicin drug-assembled Au nanoparticle (Au-GSH-DOX)-functionalized BP nanosheets (BP-PEG@Au-GSH-DOX) with improved degradation stability, biocompatibility, and tumor-targeting ability. Transmission electron microscopy, X-ray photoelectron spectroscopy, and Raman spectroscopy indicate the nanoscale degradation behavior of synthesized nanoconjugates in three different environmental exposure conditions, and the results demonstrate the remarkable nanoscale stability of BP-PEG@Au-GSH-DOX against the degradation of BP, which provides significant interest in employing 2D BP-based nanotherapeutic agents for tumor-targeted cancer phototherapy.

Linker-free Functionalization of Phosphorene Nanosheets by Sialic Acid Biomolecules

The importance of sialic acid on cell functions has been recently unveiled, and consequently, great attention has been paid to its interaction with tumor cells. In this line of research, we have realized phosphorene nanosheets functionalized with sialic acid molecules for biological applications with no need for another linker molecule. The formation of phosphorene sheets is feasible by using hydrogen plasma treatment and conversion of amorphous phosphorus on silicon substrates into highly crystalline nanosheets. Through immersion of these freshly prepared nanosheets into an aqueous solution containing sialic acid molecules, the formation of chemical binding between biomolecules and P atoms is initiated to form a carpet-like coverage. We have studied these structures by using Raman spectroscopy, electron microscopy, FTIR-ATR spectroscopy, and X-ray photoelectron spectroscopy. While XPS supports the passivation of sialic-activated phosphorene nanosheets (SAP) against oxidation in air or aqueous solutions, the FTIR analysis corroborates the evolution of P-O-C and P-C bonds between such biomolecules and the sheet surface. Moreover, the high-resolution TEM images demonstrate a considerable reduction in the lattice spacing from 0.32 nm for pristine phosphorene to 0.30 nm. Similarly, Raman spectroscopy depicts a shift in A2g in-plane vibrations, owing to the evolution of stress in the passivated sheets. To investigate their biocompatibility, we examined the toxicity of these bioactivated structures and observed no or little sign of toxicity. For the latter evaluation, we exploited MTT, flow cytometry, and animal models for in vivo investigations.

Characterization of emerging 2D materials after chemical functionalization

The chemical modification of 2D materials has proven a powerful tool to fine tune their properties. With this motivation, the development of new reactions has moved extremely fast. The need for speed, together with the intrinsic heterogeneity of the samples, has sometimes led to permissiveness in the purification and characterization protocols. In this review, we present the main tools available for the chemical characterization of functionalized 2D materials, and the information that can be derived from each of them. We then describe examples of chemical modification of 2D materials other than graphene, focusing on the chemical description of the products. We have intentionally selected examples where an above-average characterization effort has been carried out, yet we find some cases where further information would have been welcome. Our aim is to bring together the toolbox of techniques and practical examples on how to use them, to serve as guidelines for the full characterization of covalently modified 2D materials.

Black Phosphorus-Based Reusable Biosensor Platforms for the Ultrasensitive Detection of Cortisol in Saliva

A black phosphorus (BP)-based reusable biosensor platform is developed for the repeated and real-time detection of cortisol using antibody-conjugated magnetic particle (MP) structures as a refreshable receptor. Here, we took advantage of the low-noise characteristics of a mechanically exfoliated BP-based field-effect transistor (FET) and hybridized it with anti-cortisol antibody-functionalized MPs to build a highly sensitive cortisol sensor. This strategy allowed us to detect cortisol down to 1 aM in real time and discriminate cortisol from other hormones. In this case, we could easily remove MPs with used antibodies from the surface of a BP-FET and reuse the chip for up to eight repeated sensing operations. Moreover, since our platform could be fabricated using conventional photolithography techniques and the sensor can be reused multiple times, one should be able to significantly reduce operation costs for practical applications. Furthermore, this method could be utilized to detect different hormones with high sensitivity and selectivity in complex environments such as artificial saliva solutions. In this respect, our reusable BP-FET biosensing platform can be a powerful tool for versatile applications such as clinical diagnosis and basic biological analysis by conjugating various antibodies.

Photodegradation and van der Waals Passivation of Violet Phosphorus

Violet phosphorus (VP), a novel two-dimensional (2D) nanomaterial, boasts structural anisotropy, a tunable optical bandgap, and superior thermal stability compared with its allotropes. Its multifunctionality has sparked widespread interest in the community. Yet, the VP's air susceptibility impedes both probing its intrinsic features and device integration, thus making it of urgent significance to unveil the degradation mechanism. Herein, we conduct a comprehensive study of photoactivated degradation effects on VP. A nitrogen annealing method is presented for the effective elimination of surface adsorbates from VP, as evidenced by a giant surface-roughness improvement from 65.639 nm to 7.09 nm, enabling direct observation of the intrinsic morphology changes induced by photodegradation. Laser illumination demonstrates a significant thickness-thinning effect on VP, manifested in the remarkable morphological changes and the 73% quenching of PL intensity within 160 s, implying its great potential for the efficient selected-area etching of VP at high resolution. Furthermore, van der Waals passivation of VP using 2D hexagonal boron nitride (hBN) was achieved. The hBN-passivated channel exhibited improved surface roughness (0.512 nm), reduced photocurrent hysteresis, and lower responsivity (0.11 A/W @ 450 nm; 2 μW), effectively excluding adsorbate-induced electrical and optoelectrical effects while disabling photodegradation. Based on our experimental results, we conclude that three possible factors contribute to the photodegradation of VP: illumination with photon energy higher than the bandgap, adsorbed H2O, and adsorbed O2.

Realization of large-area ultraflat chiral blue phosphorene

Blue phosphorene (BlueP), a theoretically proposed phosphorous allotrope with buckled honeycomb lattice, has attracted considerable interest due to its intriguing properties. Introducing chirality into BlueP can further enrich its physical and chemical properties, expanding its potential for applications. However, the synthesis of chiral BlueP remains elusive. Here, we demonstrate the growth of large-area BlueP films on Cu(111), with lateral size limited by the wafer dimensions. Importantly, we discovered that the BlueP is characterized by an ultraflat honeycomb lattice, rather than the prevailing buckled structure, and develops highly ordered spatial chirality plausibly resulting from the rotational stacking with the substrate and interface strain release, as further confirmed by the geometric phase analysis. Moreover, spectroscopic measurements reveal its intrinsic metallic nature and different characteristic quantum oscillations in the image-potential states, which can be exploited for a range of potential applications including polarization optics, spintronics, and chiral catalysis.

Flexible and Ultra Low Weight Energy Harvesters Based on 2D Phosphorene or Black phosphorus (BP): Current and Futuristic Prospects

Phosphorene, or two-dimensional (2D) black phosphorus, has recently emerged as a competitor of graphene as it offers several advantages, including a tunable band gap, higher on/off current ratio, piezoelectric nature, and biocompatibility. Researchers have succeeded in obtaining several forms of phosphorene, such as nanosheets, nanorods, nanoribbons, and quantum dots, with satisfactory yields. Nanostructures with various controlled properties have been fabricated in multiple devices for energy production. These phosphorene-based devices are lightweight, flexible, and efficient, demonstrating great potential for energy-harvesting applications in sensors and nanogenerators. While ongoing exploration and advancements continue for these lightweight energy harvesters, it is essential to review the current progress in order to develop a future roadmap for the potential use of these phosphorene-based energy harvesters in space programs. They could be employed in applications such as wearable devices for astronauts, where ultralow weight is a vital component of any integrated device. This review also anticipates the growing significance of phosphorene in various emerging applications such as robots, information storage devices, and artificial intelligence.

Phytic Acid-Promoted Exfoliation of Black Phosphorus Nanosheets for the Fabrication of Photothermal Antibacterial Coatings

Medical device-associated infections (MDAI) caused by planktonic pathogens are of serious concern worldwide due to the emergence of drug resistance resulting from continuous overuse or misuse of antibiotics. Therefore, the design of non-antibiotics-based treatment for MDAI is of crucial importance. Black phosphorus (BP), a novel 2D material, has recently received much attention owing to its remarkable physical, chemical, mechanical, and functional features. However, the intricacy of the fabrication process has severely hampered the development of BP in prospective applications. In this study, a simple and eco-friendly liquid-phase exfoliation method of phytic acid (PA)-promoted exfoliation of BP nanosheets (PA@BP NSs) is developed for their potential application in antibacterial photothermal therapy. To impart the antimicrobial effects, the polydimethylsiloxane surfaces are functionalized with quaternized polymer (polyquaternium-2 or PQ) and PA@BP NSs, leading to the formation of PA-BP-PQ composite coatings. In addition to the contact-killing antibacterial effect of the cationic PQ, the PA-BP-PQ coating exhibits remarkable near-infrared irradiation-triggered bactericidal effects with low cytotoxicity both in vitro and in vivo. This study proposes a simple liquid-phase exfoliation technique for the fabrication of BP NSs and a one-step approach for the construction of PA-BP-PQ composite coatings for bi-modal (contact-killing and photothermal) antimicrobial therapy.

Experimental Realization of Monolayer α-Tellurene

2D materials emerge as a versatile platform for developing next-generation devices. The experimental realization of novel artificial 2D atomic crystals, which does not have bulk counterparts in nature, is still challenging and always requires new physical or chemical processes. Monolayer α-tellurene is predicted to be a stable 2D allotrope of tellurium (Te), which has great potential for applications in high-performance field-effect transistors. However, the synthesis of monolayer α-tellurene remains elusive because of its complex lattice configuration, in which the Te atoms are stacked in tri-layers in an octahedral fashion. Here, a self-assemble approach, using three atom-long Te chains derived from the dynamic non-equilibrium growth of an a-Si:Te alloy as building blocks, is reported for the epitaxial growth of monolayer α-tellurene on a Sb2 Te3 substrate. By combining scanning tunneling microscopy/spectroscopy with density functional theory calculations, the surface morphology and electronic structure of monolayer α-tellurene are revealed and the underlying growth mechanism is determined. The successful synthesis of monolayer α-tellurene opens up the possibility for the application of this new single-element 2D material in advanced electronic devices.

Hexagonal Boron Nitride Slab Waveguides for Enhanced Spectroscopy of Encapsulated 2D Materials

The layered insulator hexagonal boron nitride (hBN) is a critical substrate that brings out the exceptional intrinsic properties of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). In this work, the authors demonstrate how hBN slabs tuned to the correct thickness act as optical waveguides, enabling direct optical coupling of light emission from encapsulated layers into waveguide modes. Molybdenum selenide (MoSe2 ) and tungsten selenide (WSe2 ) are integrated within hBN-based waveguides and demonstrate direct coupling of photoluminescence emitted by in-plane and out-of-plane transition dipoles (bright and dark excitons) to slab waveguide modes. Fourier plane imaging of waveguided photoluminescence from MoSe2 demonstrates that dry etched hBN edges are an effective out-coupler of waveguided light without the need for oil-immersion optics. Gated photoluminescence of WSe2 demonstrates the ability of hBN waveguides to collect light emitted by out-of-plane dark excitons.Numerical simulations explore the parameters of dipole placement and slab thickness, elucidating the critical design parameters and serving as a guide for novel devices implementing hBN slab waveguides. The results provide a direct route for waveguide-based interrogation of layered materials, as well as a way to integrate layered materials into future photonic devices at arbitrary positions whilst maintaining their intrinsic properties.

Recent Advances in Phosphorene: Structure, Synthesis, and Properties

Phosphorene is a 2D phosphorus atomic layer arranged in a honeycomb lattice like graphene but with a buckled structure. Since its exfoliation from black phosphorus in 2014, phosphorene has attracted tremendous research interest both in terms of synthesis and fundamental research, as well as in potential applications. Recently, significant attention in phosphorene is motivated not only by research on its fundamental physical properties as a novel 2D semiconductor material, such as tunable bandgap, strong in-plane anisotropy, and high carrier mobility, but also by the study of its wide range of potential applications, such as electronic, optoelectronic, and spintronic devices, energy conversion and storage devices. However, a lot of avenues remain to be explored including the fundamental properties of phosphorene and its device applications. This review recalls the current state of the art of phosphorene and its derivatives, touching upon topics on structure, synthesis, characterization, properties, stability, and applications. The current needs and future opportunities for phosphorene are also discussed.

Prediction of novel ground-state structures and analysis of phonon transport in two-dimensional GexSy compounds

We conducted this study to explore the ground-state structures of two-dimensional (2D) variable-composition GexSy compounds, driven by the polymorphic characteristics of bulk germanium sulfides and the promising thermoelectric performance of 2D GeS (Pmn21). To accomplish this, we utilized the highly successful evolutionary-algorithm-based code USPEX in conjunction with VASP for total energy calculations, leading to the discovery of three previously unexplored structures of Ge2S (P2/c), GeS (P3̄m1), and GeS2 (P21/c). These 2D materials exhibit significantly lower formation energies compared to their reported counterparts. We thoroughly scrutinized the structural stability and subsequently analyzed their electronic structures. Our analysis reveals a nearly direct band gap of 0.12/0.84 eV with the PBE/HSE06 functional for 2D Ge2S and an indirect band gap for 2D GeS and GeS2. Their semiconducting nature highlights the crucial importance of lattice thermal conductivity (κl), which we determined by solving the Boltzmann transport equation for phonons. Importantly, we predict a room temperature κl value of 6.82 W m-1 K-1 for GeS, lower than its 2D orthorhombic counterpart. In the case of GeS2, we observed an anisotropic κl value of 16.95/10.68 W m-1 K-1 along the zigzag/armchair directions at 300 K, with an in-plane anisotropy ratio of 1.59, surpassing that of 2D IV-VI compounds. We delve into detailed discussions regarding the role of lattice anharmonicity, group velocities, phonon lifetimes, and three-phonon weighted phase space in the overall thermal conductivity analysis.

Contemporary innovations in two-dimensional transition metal dichalcogenide-based P-N junctions for optoelectronics

Two-dimensional transition metal dichalcogenides (2D-TMDCs) with various physical characteristics have attracted significant interest from the scientific and industrial worlds in the years following Moore's law. The p-n junction is one of the earliest electrical components to be utilized in electronics and optoelectronics, and modern research on 2D materials has renewed interest in it. In this regard, device preparation and application have evolved substantially in this decade. 2D TMDCs provide unprecedented flexibility in the construction of innovative p-n junction device designs, which is not achievable with traditional bulk semiconductors. It has been investigated using 2D TMDCs for various junctions, including homojunctions, heterojunctions, P-I-N junctions, and broken gap junctions. To achieve high-performance p-n junctions, several issues still need to be resolved, such as developing 2D TMDCs of superior quality, raising the rectification ratio and quantum efficiency, and successfully separating the photogenerated electron-hole pairs, among other things. This review comprehensively details the various 2D-based p-n junction geometries investigated with an emphasis on 2D junctions. We investigated the 2D p-n junctions utilized in current rectifiers and photodetectors. To make a comparison of various devices easier, important optoelectronic and electronic features are presented. We thoroughly assessed the review's prospects and challenges for this emerging field of study. This study will serve as a roadmap for more real-world photodetection technology applications.

Polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional heterojunction

Polarization-sensitive photodetectors in the ultraviolet (UV) region have been favored for their great meaning in the field of military and civilian. UV photodetectors based on GaN have aroused much attention due to high photocurrent and high sensitivity. However, the dependence on external power sources and the limited sensitivity to polarized UV light significantly impede the practical application of these photodetectors in UV-polarized photodetection. Herein, a polarization-sensitive UV photodetector based on ReSe2/GaN mixed-dimensional van der Waals (vdWs) heterojunction is proposed. Owing to the high-quality junction and type-II band alignment, the responsivity and specific detectivity reach values of 870 mA/W and 6.8 × 1011 Jones, under 325 nm illumination, respectively. Furthermore, thanks to the strong in-plane anisotropy of ReSe2, the device is highly sensitive to polarized UV light with a photocurrent anisotropic ratio up to 6.67. The findings are expected to bring new opportunities for the development of highly sensitive, high-speed and energy-efficient polarization-sensitive photodetectors.

Black phosphorene/SnSe van der Waals heterostructure as a promising anchoring anode material for metal-ion batteries

Black phosphorene (BP) is a glowing two-dimensional semiconducting layer material for cutting-edge microelectronics, with high carrier mobility and thickness-dependent band gap. Here, based on van der Waals (vdW)-corrected first-principles approaches, we investigated stacked BP/tin selenide (BP/SnSe) vdW heterostructure as an anode material for metal ion batteries, which exhibits a significant theoretical capacity, along with relatively durable binding strength compared to the constituent BP and SnSe monolayers. Our calculations demonstrated that the Li/Na adatom favors insertion into the interlayer region of BP/SnSe vdW heterostructure owing to synergistic interfacial effect, resulting in comparable diffusivity to the BP and SnSe monolayers. Subsequently, the theoretical specific capacities for Li/Na are found to be as high as 956.30 mAhg-1and 828.79 mAhg-1, respectively, which could be attributed to the much higher storage capacity of Li/Na adatoms in the BP/SnSe vdW heterostructure. Moreover, the electronic structure calculations reveal that a large amount of charge transfer assists in semiconductor-to-metallic transition upon lithiation/sodiation, ensuring good electrical conductivity. These simulations verify that the BP/SnSe vdW heterostructure has immense potential for application in the design of metal-ion battery technologies.

Extra-High Mechanical and Phononic Anisotropy in Black Phosphorus Blisters

Strain is an effective strategy to modulate the electrical, optical, and optoelectronic properties of 2D materials. Conventional circular blisters could generate a biaxial stretching of 2D membranes with notable strain gradients along the hoop direction. However, such a deformation mode cannot be utilized to investigate mechanical responses of in-plane anisotropic 2D materials, for example, black phosphorus (BP), due to its crystallographic orientation dependence. Here, a novel rectangular-shaped bulge device is developed to uniaxially stretch the membrane, and further provide a promising platform to detect orientation-dependent mechanical and optical properties of anisotropic 2D materials. Impressively, the derived anisotropic ratio of Young's modulus of BP flakes is much higher than the values obtained via the nanoindentation method. The extra-high strain-dependent phononic anisotropy in Raman modes along different crystalline orientations is also observed. The designed rectangular budge device expands the uniaxial deformation methods available, allowing to explore the mechanical, and strain-dependent physical properties of other anisotropic 2D materials more broadly.

Probing Carrier Dynamics in Large-Scale MBE-Grown PtSe2 Films by Terahertz Spectroscopy

Atomically thin platinum diselenide (PtSe2) films are promising for applications in the fields of electronics, spintronics, and photodetectors owing to their tunable electronic structure and high carrier mobility. Using terahertz (THz) spectroscopy techniques, we investigated the layer-dependent semiconducting-to-metallic phase transition and associated intrinsic carrier dynamics in large-scale PtSe2 films grown by molecular beam epitaxy. The uniformity of large-scale PtSe2 films was characterized by spatially and frequency-resolved THz-based sheet conductivity mapping. Furthermore, we use an optical-pump-THz-probe technique to study the transport dynamics of photoexcited carriers and explore light-induced intergrain carrier transport in PtSe2 films. We demonstrate large-scale THz-based mapping of the electrical properties of transition metal dichalcogenide films and show that the two noncontact THz-based approaches provide insight in the spatial and temporal properties of PtSe2 films.

Protein Sequencing with Artificial Intelligence: Machine Learning Integrated Phosphorene Nanoslit

Achieving high throughput protein sequencing at single molecule resolution remains a daunting challenge. Herein, relying on a solid-state 2D phosphorene nanoslit device, an extraordinary biosensor to rapidly identify the key signatures of all twenty amino acids using an interpretable machine learning (ML) model is reported. The XGBoost regression algorithm allows the determination of the transmission function of all twenty amino acids with high accuracy. The resultant ML and DFT studies reveal that it is possible to identify individual amino acids through transmission and current signals readouts with high sensitivity and selectivity. Moreover, we thoroughly compared our results to those from graphene nanoslit and found that the phosphorene nanoslit device can be an ideal candidate for protein sequencing up to a 20-fold increase in transmission sensitivity. The present study facilitates high throughput screening of all twenty amino acids and can be further extended to other biomolecules for disease diagnosis and therapeutic decision making.

Controllable Chemical Vapor Deposition Growth of High-Mobility Bi2O2Te Nanosheets

Air-stable bismuth oxychalcogenides (Bi2O2X) have exhibited exceptional electrical properties and ultrahigh mobility in high-performance electronic devices. However, although Bi2O2Se is commonly used, there have been few reported uses of Bi2O2Te because of its challenging preparation process. This study aimed to synthesize two-dimensional Bi2O2Te nanosheets using the chemical vapor deposition method. Bi2O2Te nanosheets with different thicknesses were obtained by adjusting the growth conditions, such as temperature. The as-prepared Bi2O2Te single crystal exhibited a Hall mobility of 496 cm2 V-1 s-1 at 300 K, which reached 5000 cm2 V-1 s-1 at 2 K. The results expand the Bi2O2X family and show Bi2O2Te to be a promising candidate for use in highly efficient electronic devices.

Two-Dimensional Silver-Chalcogenolate-Based Cluster-Assembled Material: A p-type Semiconductor

We have synthesized and characterized a new two-dimensional honeycomb architecture resembling a single-layer of atomically precise silver cluster-assembled material (CAM), [Ag12(StBu)6(CF3COO)6(4,4'-azopyridine)3] (Ag12-azo-bpy). The interlayer noncovalent van der Waals interactions within the single-crystals were successfully disrupted, leading to the creation of this unique structure. The optimized Ag12-azo-bpy CAM demonstrates a valence band that is localized on the Ag12 cluster node situated near the Fermi energy level. This localization induces electron injection from the linker to the cluster node, facilitating efficient charge transportation along the plane. Exploiting this single-layer structure as a distinctive platform for p-type channel material, it was employed in a field-effect transistor configuration. Remarkably, the transistor exhibits a high hole mobility of 1.215 cm2 V-1 s-1 and an impressive ON/OFF current ratio of ∼4500 at room-temperature.

Thermodynamic Origins of Structural Metastability in Two-Dimensional Black Arsenic

Two-dimensional (2D) materials have aroused considerable research interest owing to their potential applications in nanoelectronics and optoelectronics. Thermodynamic stability of 2D structures inevitably affects the performance and power consumption of the fabricated nanodevices. Black arsenic (b-As), as a cousin of black phosphorus, has presented extremely high anisotropy in physical properties. However, systematic research on structural stability of b-As is still lacking. Herein, we demonstrated the detailed analysis on structural metastability of the natural b-As, and determined its existence conditions in terms of two essential thermodynamic variables, hydrostatic pressure and temperature. Our results confirmed that b-As can survive only below 0.7 GPa, and then irreversibly transforms to gray arsenic, consistent with our theoretical calculations. Furthermore, a thermal annealing strategy was developed to precisely control the thickness of the b-As flake, and it sublimates at 300 °C. These results could pave the way for 2D b-As in many promising applications.

TiN/Ti3C2 heterojunction-based photonic device for optical Kerr switch

As one of the new nanomaterials, TiN/Ti3C2 shows excellent optoelectronic characteristics, thus it has been widely used in many applications, such as biomedicine, optical sensors, image processing, and optical switching. With the advancement of communication capabilities and communication networks, optical fiber communication has put a higher demand on signal processing. In order to overcome the limitations of the electronic transfer rate bottleneck, the concept of all-optical signal processing has been proposed. Utilizing the excellent optical nonlinear effect of the TiN/Ti3C2 heterojunction-coated microfiber (THM), a novel THM-based optical Kerr switch has been proposed. Injecting a strong control light and a signal light into the device simultaneously, and controlling the state of turn on or off of the control light, can adjust the intensity of the signal light. Based on this, the amplitude modulation of the signal light can be achieved. With a control light power of 200 mW, the maximum extinction ratio of the signal light reaches 27 dB. We believe that this type of compact device can demonstrate great potential for integration with current high-speed fiber communication networks, providing a possible method for all-optical signal processing through nonlinear effects, and has broad prospects in the field of all-optical signal processing, robots, and high-speed communication.

Long operating lifetime mid-infrared LEDs based on black phosphorus

Black phosphorus (BP) is a narrow bandgap layered semiconductor promising for mid-infrared optoelectronic applications. BP-based devices have been shown to surpass state-of-the-art mid-infrared detectors and light-emitting diodes (LEDs) in terms of performance. Despite their device advantages, the material's inherent instability in the air could hinder its use in practical optoelectronic applications. Here, we investigated the impact of passivation on the device lifetime of BP LEDs, which deteriorate in a matter of seconds without using passivation. The lifetime is significantly extended with an Al2O3 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin sealing. The operational lifetime (half-life) at room temperature is extrapolated to be ~15,000 h with an initial power density of 340 mW/cm2 based on accelerated life testing. The present results indicate that efficient BP optoelectronics can be highly robust through simple and scalable packaging technologies, with important practical implications for mid-infrared applications.

Microenvironment Restruction of Emerging 2D Materials and their Roles in Therapeutic and Diagnostic Nano-Bio-Platforms

Engineering advanced therapeutic and diagnostic nano-bio-platforms (NBPFs) have emerged as rapidly-developed pathways against a wide range of challenges in antitumor, antipathogen, tissue regeneration, bioimaging, and biosensing applications. Emerged 2D materials have attracted extensive scientific interest as fundamental building blocks or nanostructures among material scientists, chemists, biologists, and doctors due to their advantageous physicochemical and biological properties. This timely review provides a comprehensive summary of creating advanced NBPFs via emerging 2D materials (2D-NBPFs) with unique insights into the corresponding molecularly restructured microenvironments and biofunctionalities. First, it is focused on an up-to-date overview of the synthetic strategies for designing 2D-NBPFs with a cross-comparison of their advantages and disadvantages. After that, the recent key achievements are summarized in tuning the biofunctionalities of 2D-NBPFs via molecularly programmed microenvironments, including physiological stability, biocompatibility, bio-adhesiveness, specific binding to pathogens, broad-spectrum pathogen inhibitors, stimuli-responsive systems, and enzyme-mimetics. Moreover, the representative therapeutic and diagnostic applications of 2D-NBPFs are also discussed with detailed disclosure of their critical design principles and parameters. Finally, current challenges and future research directions are also discussed. Overall, this review will provide cutting-edge and multidisciplinary guidance for accelerating future developments and therapeutic/diagnostic applications of 2D-NBPFs.

Anomalous thickness dependence of photoluminescence quantum yield in black phosphorous

Black phosphorus has emerged as a unique optoelectronic material, exhibiting tunable and high device performance from mid-infrared to visible wavelengths. Understanding the photophysics of this system is of interest to further advance device technologies based on it. Here we report the thickness dependence of the photoluminescence quantum yield at room temperature in black phosphorus while measuring the various radiative and non-radiative recombination rates. As the thickness decreases from bulk to ~4 nm, a drop in the photoluminescence quantum yield is initially observed due to enhanced surface carrier recombination, followed by an unexpectedly sharp increase in photoluminescence quantum yield with further thickness scaling, with an average value of ~30% for monolayers. This trend arises from the free-carrier to excitonic transition in black phosphorus thin films, and differs from the behaviour of conventional semiconductors, where photoluminescence quantum yield monotonically deteriorates with decreasing thickness. Furthermore, we find that the surface carrier recombination velocity of black phosphorus is two orders of magnitude lower than the lowest value reported in the literature for any semiconductor with or without passivation; this is due to the presence of self-terminated surface bonds in black phosphorus.

Gate Dielectrics Integration for 2D Electronics: Challenges, Advances, and Outlook

2D semiconductors have emerged both as an ideal platform for fundamental studies and as promising channel materials in beyond-silicon field-effect-transistors due to their outstanding electrical properties and exceptional tunability via external field. However, the lack of proper dielectrics for 2D semiconductors has become a major roadblock for their further development toward practical applications. The prominent issues between conventional 3D dielectrics and 2D semiconductors arise from the integration and interface quality, where defect states and imperfections lead to dramatic deterioration of device performance. In this review article, the root causes of such issues are briefly analyzed and recent advances on some possible solutions, including various approaches of adapting conventional dielectrics to 2D semiconductors, and the development of novel dielectrics with van der Waals surface toward high-performance 2D electronics are summarized. Then, in the perspective, the requirements of ideal dielectrics for state-of-the-art 2D devices are outlined and an outlook for their future development is provided.

Repairing and Preventing Photooxidation of Few-Layer Black Phosphorus with β-Carotene

Few-layer black phosphorus (FLBP), a technologically important 2D material, faces a major hurdle to consumer applications: spontaneous degradation under ambient conditions. Blocking the direct exposure of FLBP to the environment has remained the key strategy to enhance its stability, but this can also limit its utility. In this paper, a more ambitious approach to handling FLBP is reported where not only is FLBP oxidation blocked, but it is also repaired postoxidation. Our approach, inspired by nature, employs the antioxidant molecule β-carotene that protects plants against photooxidative damages to act as a protecting and repairing agent for FLBP. The mechanistic role of β-carotene is established by a suite of spectro-microscopy techniques, in combination with computational studies and biochemical assays. Transconductance studies on FLBP-based field effect transistor (FET) devices further affirm the protective and reparative effects of β-carotene. The outcomes indicate the potential for deploying a plethora of natural antioxidant molecules to enhance the stability of other environmentally sensitive inorganic nanomaterials and expedite their translation for technological and consumer applications.

Combined photothermal and sonodynamic therapy using a 2D black phosphorus nanosheets loaded coating for efficient bacterial inhibition and bone-implant integration

Surgical site infection (SSI) remains a major threat for implant failure in orthopedics. Herein, we report a dual-functional coating on Ti implants (named Ti/PDA/BP) with the integration of two-dimensional (2D) photo-sono sensitive black phosphorus nanosheets (BPNSs) and polydopamine (PDA) for efficient bacterial inhibition and bone-implant integration. For the first time, we employ BPNSs as generators of reactive radicals (ROS) under ultrasound (US) stimuli for implant associated infection. Additionally, the application of PDA improves the stability of BPNSs, the biocompatibility and photothermal performance of this hybrid coating. The as-prepared Ti/PDA/BP coating exhibits superior biocompatibility, bioactivity, photothermal and sonodynamic conversion abilities. Owing to the synergistic effect of hyperthermia and ·OH, Ti/PDA/BP damages the membrane and antioxidant system of Staphylococcus aureus, reaching a high antibacterial activity of 96.6% in vitro and 97.3% in vivo with rapid 10 min NIR irradiation and 20 min US treatment. In addition, we firstly unveil the significant effect of Ti/PDA/BP-based sonodynamic therapy (SDT) on bacterial membrane and oxidative stress at the transcriptome level. Moreover, the Ti/PDA/BP coating remarkably promotes osteogenesis in vitro and bone-implant osseointegration in vivo. Overall, development of Ti/PDA/BP bioactive coating provides a new strategy for combating the implant associated infection.

An Advanced Strategy to Enhance TENG Output: Reducing Triboelectric Charge Decay

The Internet of Things (IoT) is poised to accelerate the construction of smart cities. However, it requires more than 30 billion sensors to realize the IoT vision, posing great challenges and opportunities for industries of self-powered sensors. Triboelectric nanogenerator (TENG), an emerging new technology, is capable of easily converting energy from surrounding environment into electricity, thus TENG has tremendous application potential in self-powered IoT sensors. At present, TENG encounters a bottleneck to boost output for large-scale commercial use if just by promoting triboelectric charge generation, because the output is decided by the triboelectric charge dynamic equilibrium between generation and decay. To break this bottleneck, the strategy of reducing triboelectric charge decay to enhance TENG output is focused. First, multiple mechanisms of triboelectric charge decay are summarized in detail with basic theoretical principles for future research. Furthermore, recent advances in reducing triboelectric charge decay are thoroughly reviewed and outlined in three aspects: inhibition and application of air breakdown, simultaneous inhibition of air breakdown and triboelectric charge drift/diffusion, and inhibition of triboelectric charge drift/diffusion. Finally, challenges and future research focus are proposed. This review provides reference and guidance for enhancing TENG output.

Two-Dimensional Violet Phosphorus P11: A Large Band Gap Phosphorus Allotrope

The discovery of novel large band gap two-dimensional (2D) materials with good stability and high carrier mobility will innovate the next generation of electronics and optoelectronics. A new allotrope of 2D violet phosphorus P₁₁ was synthesized via a salt flux method in the presence of bismuth. Millimeter-sized crystals of violet-P₁₁ were collected after removing the salt flux with DI water. From single-crystal X-ray diffraction, the crystal structure of violet-P₁₁ was determined to be in the monoclinic space group C2/c (no. 15) with unit cell parameters of a = 9.166(6) Å, b = 9.121(6) Å, c = 21.803(14)Å, β = 97.638(17)°, and a unit cell volume of 1807(2) ų. The structure differences between violet-P₁₁, violet-P₂₁, and fibrous-P₂₁ are discussed. The violet-P₁₁ crystals can be mechanically exfoliated down to a few layers (∼6 nm). Photoluminescence and Raman measurements reveal the thickness-dependent nature of violet-P₁₁, and exfoliated violet-P₁₁ flakes were stable in ambient air for at least 1 h, exhibiting moderate ambient stability. The bulk violet-P₁₁ crystals exhibit excellent stability, being stable in ambient air for many days. The optical band gap of violet-P₁₁ bulk crystals is 2.0(1) eV measured by UV-Vis and electron energy-loss spectroscopy measurements, in agreement with density functional theory calculations which predict that violet-P₁₁ is a direct band gap semiconductor with band gaps of 1.8 and 1.9 eV for bulk and monolayer, respectively, and with a high carrier mobility. This band gap is the largest among the known single-element 2D layered bulk crystals and thus attractive for various optoelectronic devices.

CrPS4 Nanoflakes as Stable Direct-Band-Gap 2D Materials for Ultrafast Pulse Laser Applications

Two-dimensional (2D) materials have attracted considerable attention due to their potential for generating ultrafast pulsed lasers. Unfortunately, the poor stability of most layered 2D materials under air exposure leads to increased fabrication costs; this has limited their development for practical applications. In this paper, we describe the successful preparation of a novel, air-stable, and broadband saturable absorber (SA), the metal thiophosphate CrPS₄, using a simple and cost-effective liquid exfoliation method. The van der Waals crystal structure of CrPS₄ consists of chains of CrS₆ units interconnected by phosphorus. In this study, we calculated the electronic band structures of CrPS₄, revealing a direct band gap. The nonlinear saturable absorption properties, which were investigated using the P-scan technique at 1550 nm, revealed that CrPS₄-SA had a modulation depth of 12.2% and a saturation intensity of 463 MW/cm². Integration of the CrPS₄-SA into Yb-doped fiber and Er-doped fiber laser cavities led to mode-locking for the first time, resulting in the shortest pulse durations of 298 ps and 500 fs at 1 and 1.5 µm, respectively. These results indicate that CrPS₄ has great potential for broadband ultrafast photonic applications and could be developed into an excellent candidate for SA devices, providing new directions in the search for stable SA materials and for their design.

Chemical Vapor Transport Synthesis of Fibrous Red Phosphorus Crystal as Anodes for Lithium-Ion Batteries

Red phosphorus (RP) is considered to be the most promising anode material for lithium-Ion batteries (LIBs) due to its high theoretical specific capacity and suitable voltage platform. However, its poor electrical conductivity (10^-12 S/m) and the large volume changes that accompany the cycling process severely limit its practical application. Herein, we have prepared fibrous red phosphorus (FP) that possesses better electrical conductivity (10^-4 S/m) and a special structure by chemical vapor transport (CVT) to improve electrochemical performance as an anode material for LIBs. Compounding it with graphite (C) by a simple ball milling method, the composite material (FP-C) shows a high reversible specific capacity of 1621 mAh/g, excellent high-rate performance and long cycle life with a capacity of 742.4 mAh/g after 700 cycles at a high current density of 2 A/g, and coulombic efficiencies reaching almost 100% for each cycle.

Highly anisotropic and ultra-diffusive vacancies in α-antimonene

α-Antimonene has recently been successfully fabricated in experiment; hence, it is timely to examine how various types of point defects in α-antimonene can affect its novel electronic properties. Herein, we present a comprehensive investigation of a total of nine possible types of point defects in α-antimonene via first-principles calculations. Particular attention is placed on the structural stability of the point defects and the effects of point defects on the electronic properties of α-antimonene. Compared with its structural analogs, such as phosphorene, graphene, and silicene, we find that most defects in α-antimonene can be more easily generated, and that among the nine types of point defects, the single vacancy SV-(5|9) is likely the most stable one while its presence can be orders of magnitude higher in concentration than that in phosphorene. Moreover, we find that the vacancy exhibits anisotropic and low diffusion barriers, of merely 0.10/0.30 eV in the zigzag/armchair direction. Notably, at room temperature, the migration of SV-(5|9) in the zigzag direction of α-antimonene is estimated to be three orders faster than that along the armchair direction, and also three orders faster than that of phosphorene in the same direction. Overall, the point defects in α-antimonene can significantly affect the electronic properties of the host two-dimensional (2D) semiconductor and thus the light absorption capability. The anisotropic, ultra-diffusive, and charge tunable single vacancies, along with the high oxidation resistance, render the α-antimonene sheet a unique 2D semiconductor (beyond the phosphorene) for developing vacancy-enabled nanoelectronics.

Degradation Studies of Air-Exposed Black Phosphorous and Black Arsenic Phosphorous

This work investigates the effects of oxygen and humidity on black phosphorous (BP) and black arsenic phosphorous (AsxP1−x ) flakes using Raman spectroscopy and in situ electric transport measurements (four-probe resistance and thermoelectric power, TEP). The results show that the incorporation of arsenic into the lattice of BP renders it more stable, with the degradation times for BP, As0.2P0.8, and As0.4P0.6 being 4, 5, and 11 days, respectively. The P-P Raman peak intensities were determined to decrease with exposure to oxygen and moisture. The TEP measurements confirmed that both BP and AsxP1−x are p-type semiconductors with the TEP of As0.4P0.6 stabilizing more slowly than that of BP. In addition, the four-probe resistance of BP and AsxP1−x stabilized significantly faster when exposed to air after being degassed in a vacuum. This was attributed to the charge transfer between the oxygen redox potential of air and the Fermi energy (EF) of the semiconductors.

Covalent Functionalization of Black Phosphorus Nanosheets with Dichlorocarbenes for Enhanced Electrocatalytic Hydrogen Evolution Reaction

Two-dimensional black phosphorus (BP) has emerged as a perspective material for various micro- and opto-electronic, energy, catalytic, and biomedical applications. Chemical functionalization of black phosphorus nanosheets (BPNS) is an important pathway for the preparation of materials with improved ambient stability and enhanced physical properties. Currently, the covalent functionalization of BPNS with highly reactive intermediates, such as carbon-free radicals or nitrenes, has been widely implemented to modify the material's surface. However, it should be noted that this field requires more in-depth research and new developments. Herein, we report for the first time the covalent carbene functionalization of BPNS using dichlorocarbene as a functionalizing agent. The P-C bond formation in the obtained material (BP-CCl₂) has been confirmed by Raman, solid-state ³¹P NMR, IR, and X-ray photoelectron spectroscopy methods. The BP-CCl₂ nanosheets exhibit an enhanced electrocatalytic hydrogen evolution reaction (HER) performance with an overpotential of 442 mV at -1 mA cm^-2 and a Tafel slope of 120 mV dec^-1, outperforming the pristine BPNS.

A Dual-Signaling Electrochemical Aptasensor Based on an In-Plane Gold Nanoparticles-Black Phosphorus Heterostructure for the Sensitive Detection of Patulin

Patulin (PAT), a type of mycotoxin existing in foodstuffs, is harmful to food safety and human health. Thus, it is necessary to develop sensitive, selective and reliable analytical methods for PAT detection. In this study, a sensitive aptasensor based on a dual-signaling strategy was fabricated, in which a methylene-blue-labeled aptamer and ferrocene monocarboxylic acid in the electrolyte acted as a dual signal, for monitoring PAT. To improve the sensitivity of the aptasensor, an in-plane gold nanoparticles-black phosphorus heterostructure (AuNPs-BPNS) was synthesized for signal amplification. Due to the combination of AuNPs-BPNS nanocomposites and the dual-signaling strategy, the proposed aptasensor has a good analytical performance for PAT detection with the broad linear range of 0.1 nM-100.0 μM and the low detection limit of 0.043 nM. Moreover, the aptasensor was successfully employed for real sample detection, such as apple, pear and tomato. It is expected that BPNS-based nanomaterials hold great promise for developing novel aptasensors and may provide a sensing platform for food safety monitoring.

Towards the Future of Polymeric Hybrids of Two-Dimensional Black Phosphorus or Phosphorene: From Energy to Biological Applications

With the advent of a new 2D nanomaterial, namely, black phosphorus (BP) or phosphorene, the scientific community is now dedicated to focusing on and exploring this 2D material offering elusive properties such as a higher carrier mobility, biocompatibility, thickness-dependent band gap, and optoelectronic characteristics that can be harnessed for multiple applications, e.g., nanofillers, energy storage devices, field effect transistors, in water disinfection, and in biomedical sciences. The hexagonal ring of phosphorus atoms in phosphorene is twisted slightly, unlike how it is in graphene. Its unique characteristics, such as a high carrier mobility, anisotropic nature, and biocompatibility, have attracted much attention and generated further scientific curiosity. However, despite these interesting features, the phosphorene or BP poses challenges and causes frustrations when it comes to its stability under ambient conditions and processability, and thus in order to overcome these hurdles, it must be conjugated or linked with the suitable and functional organic counter macromolecule in such a way that its properties are not compromised while providing a protection from air/water that can otherwise degrade it to oxides and acid. The resulting composites/hybrid system of phosphorene and a macromolecule, e.g., a polymer, can outperform and be exploited for the aforementioned applications. These assemblies of a polymer and phosphorene have the potential for shifting the paradigm from exhaustively used graphene to new commercialized products offering multiple applications.

Quantitative Characterization of the Anisotropic Thermal Properties of Encapsulated Two-Dimensional MoS2 Nanofilms

Two-dimensional (2D) semiconductors exhibit unique physical properties at the limit of a few atomic layers that are desirable for optoelectronic, spintronic, and electronic applications. Some of these materials require ambient encapsulation to preserve their properties from environmental degradation. While encapsulating 2D semiconductors is essential to device functionality, they also impact heat management due to the reduced thermal conductivity of the 2D material. There are limited experimental reports on in-plane thermal conductivity measurements in encapsulated 2D semiconductors. These measurements are particularly challenging in ultrathin films with a lower thermal conductivity than graphene since it may be difficult to separate the thermal effects of the sample from the encapsulating layers. To address this challenge, we integrated the frequency domain thermoreflectance (FDTR) and optothermal Raman spectroscopy (OTRS) techniques in the same experimental platform. First, we use the FDTR technique to characterize the cross-plane thermal conductivity and thermal boundary conductance. Next, we measure the in-plane thermal conductivity by model-based analysis of the OTRS measurements, using the cross-plane properties obtained from the FDTR measurements as input parameters. We provide experimental data for the first time on the thickness-dependent in-plane thermal conductivity of ultrathin MoS2 nanofilms encapsulated by alumina (Al2O3) and silica (SiO2) thin films. The measured thermal conductivity increased from 26.0 ± 10.0 W m-1 K-1 for monolayer MoS2 to 39.8 ± 10.8 W m-1 K-1 for the six-layer films. We also show that the thickness-dependent cross-plane thermal boundary conductance of the Al2O3/MoS2/SiO2 interface is limited by the low thermal conductance (18.5 MW m-2 K-1) of the MoS2/SiO2 interface, which has important implications on heat management in SiO2-supported and encased MoS2 devices. The measurement methods can be generalized to other 2D materials to study their anisotropic thermal properties.

Benchmarking fundamental gap of Sc2C(OH)2 MXene by many-body methods

Sc₂C(OH)₂ is a prototypical non-magnetic member of MXenes, a promising transition-metal-based 2D material family, with a direct bandgap. We provide here a benchmark of its fundamental gap Δ obtained from many-body GW and fixed-node diffusion Monte Carlo methods. Both approaches independently arrive at a similar value of Δ ∼ 1.3 eV, suggesting the validity of both methods. Such a bandgap makes Sc₂C(OH)₂ a 2D semiconductor suitable for optoelectronic applications. The absorbance spectra and the first exciton binding energy (0.63 eV), based on the Bethe-Salpeter equation, are presented as well. The reported results may serve to delineate experimental uncertainties and enable selection of reasonable approximations such as density functional theory functionals, for use in modeling of related MXenes.

Self-Powered and Broadband Bismuth Oxyselenide/p-Silicon Heterojunction Photodetectors with Low Dark Current and Fast Response

Inorganic nanomaterials such as graphene, black phosphorus, and transition metal dichalcogenides have attracted great interest in developing optoelectronic devices due to their efficient conversion between light and electric signals. However, the zero band gap nature, the unstable chemical properties, and the low electron mobility constrained their wide applications. Bismuth oxyselenide (Bi₂O₂Se) is gradually showing great research significance in the optoelectronic field. Here, we develop a bismuth oxyselenide/p-silicon (Bi₂O₂Se/p-Si) heterojunction and design a self-powered and broadband Bi₂O₂Se/p-Si heterojunction photodetector with an ultrafast response (2.6 μs) and low dark current (10^-10 A without gate voltage regulation). It possesses a remarkable detectivity of 4.43 × 10¹² cm Hz^1/2 W^-1 and a self-powered photoresponse characteristic at 365-1550 nm (ultraviolet-near-infrared). Meanwhile, the Bi₂O₂Se/p-Si heterojunction photodetector also shows high stability and repeatability. It is expected that the proposed Bi₂O₂Se/p-Si heterojunction photodetector will expand the applications of Bi₂O₂Se in practical integrated circuits in the field of material science, energy development, optical imaging, biomedicine, and other applications.

Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors

Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.