"Nanoparticle-in-alloy" approach to efficient thermoelectrics: silicides in SiGe

Constructing quasi-layered and self-hole doped SnSe oriented films to achieve excellent thermoelectric power factor and output power density

Thermoelectric (TE) technology can achieve the mutual conversion between electric energy and waste heat, and it has exhibited great prospects in multifunctional energy applications to alleviate the energy crisis. In the recent decade, SnSe has been explored widely because of its potentially high energy harvesting efficiency, green nature, and low cost. However, the relatively poor power factor (PF) derived from the intrinsic low carrier concentration (∼1017 cm-3) limits the output power density of the stoichiometric SnSe devices. Therefore, the advancement of novel optimization strategies for controlling carrier concentration is of utmost importance. Besides, compared with 3D bulks, 2D thin films are more compatible with modern semiconductor technology and have unique advantages in the construction and application of TE micro- and nano-devices. In this study, post-selenization technology were applied to increase the carrier concentration of the a-axis oriented SnSe epitaxial films utilizing the charge transfer and self-hole doped effects. The quasi-layered and self-hole doped films exhibited a high power factor of ∼5.9 µW cm-1 K-2 at 600 K along the in-plane direction when the carrier concentration is enhanced to ∼1018 cm-3 by increasing the selenization time to ∼20 min. The TE generator composed of four P-type film legs demonstrated the ultrahigh maximum power density of ∼83, ∼838 µW cm-2 at the temperature difference of ∼50 and ∼90 K, respectively. Post-selenization can effectively optimize the carrier concentration of SnSe-based materials, which is also feasible to other anion deficient TE films.

Lattice thermal conductivity of embedded nanoparticle composites: the role of particle size distribution

Nanoparticles embedded within a crystalline solid serve as impurity phonon scattering centers that reduce lattice thermal conductivity, a desirable result for thermoelectric applications. Most studies of thermal transport in nanoparticle-laden composite materials have assumed the nanoparticles to possess a single size. If there is a distribution of nanoparticle sizes, how is thermal conductivity affected? Moreover, is there a best nanoparticle size distribution to minimize thermal conductivity? In this work, we study the thermal conductivity of nanoparticle-laden composites through a molecular dynamics approach which naturally captures phonon scattering processes more rigorously than previously used analytical theories. From thermal transport simulations of a systematic variety of nanoparticle configurations, we empirically formulate how nanoparticle size distribution, particle number density, and volume fraction affect the lattice thermal conductivity. We find at volume fractions below 10%, the particle number density is by far the most impactful factor on thermal conductivity and at fractions above 10%, the effect of the size distribution and number density is minimal compared to the volume fraction. In fact, upon comparisons of configurations with the same particle number density and volume fractions, the lattice thermal conductivity of a single nanoparticle size can be lower than that of a size distribution which contradicts intuitions that a single size would attenuate phonon transport less than a spectrum of sizes. The random alloy, which can be considered as a single size configuration of maximum particle number density where the nanoparticle size is equal to the lattice constant, is the most performant in thermal conductivity reduction at volume fractions below 10%. We conclude that nanoparticle size distribution only plays a minor role in affecting lattice thermal conductivity with the particle number density and volume fraction being the more significant factors that should be considered in fabrication of nanoparticle-laden composites for potential improved thermoelectric performance.

A physics rule to design aperiodic width-modulated waveguides for minimum phonon transmission with Bayesian optimization

Aperiodic nano-waveguides (nWVGs) and superlattices (SLs) limit phonon transmission and heat conduction much more efficiently than periodic ones. They could block parasitic heat conduction that restricts heat management and energy conversion at the nanoscale. Aperiodicity can be realized in multiple ways and with variable degrees of complexity. Machine learning optimization of hetero-SLs for minimum coherent phonon conduction showed optimal aperiodicity for moderate disorder against physics intuition. Here, we report on optimal aperiodicity in width-modulated nWVGS for maximum disorder as expected by physics. Optimizing aperiodic geometry modulation is particularly challenging due to the enormous possible configurations. We set up a feasible optimization problem removing unnecessary complexity and we demonstrate efficient Bayesian optimization. Our results confirm the predicted physics rule that minimum thermal conductance occurs for the most disordered arrays of modulation units; the degree of disorder being quantified by the number of non-identical modulation units. Our work opens a route to design geometrical aperiodicity and control transmission across metamaterials.

Effect of Heat Treatment Temperature on the Crystallization Behavior and Microstructural Evolution of Amorphous NbCo1.1Sn

Heat treatment-induced nanocrystallization of amorphous precursors is a promising method for nanostructuring half-Heusler compounds as it holds significant potential in the fabrication of intricate and customizable nanostructured materials. To fully exploit these advantages, a comprehensive understanding of the crystallization behavior of amorphous precursors under different crystallization conditions is crucial. In this study, we investigated the crystallization behavior of the amorphous NbCo1.1Sn alloy at elevated temperatures (783 and 893 K) using transmission electron microscopy and atom probe tomography. As a result, heat treatment at 893 K resulted in a significantly finer grain structure than heat treatment at 783 K owing to the higher nucleation rate at 893 K. At both temperatures, the predominant phase was a half-Heusler phase, whereas the Heusler phase, associated with Co diffusion, was exclusively observed at the specimen annealed at 893 K. The Debye-Callaway model supports that the lower lattice thermal conductivity of NbCo1.1Sn annealed at 893 K is primarily attributed to the formation of Heusler nanoprecipitates rather than a finer grain size. The experimental findings of this study provide valuable insights into the nanocrystallization of amorphous alloys for enhancing thermoelectric properties.

Liquid-Modulated Photothermal Phenomena in Porous Silicon Nanostructures Studied by μ-Raman Spectroscopy

In the present study, the effect of liquid filling of the nanopore network on thermal transport in porous Si layers was investigated by μ-Raman spectroscopy. The values of thermal conductivity of porous Si and porous Si-hexadecane composites were estimated by fitting the experimentally measured photoinduced temperature rise with finite element method simulations. As a result, filling the pores with hexadecane led to (i) an increase in the thermal conductivity of the porous Si-hexadecane composite in a wide range of porosity levels (40-80%) and (ii) a suppression of the characteristic laser-induced phase transition of Si from cubic to hexagonal form.

Double Doping of BiCuSeO with Ca and Pb to Increase the Electrical Transport Properties and Reduce the Lattice Thermal Conductivity Synchronously

A series of nearly single-phase Ca- and Pb-codoped BiCuSeO bulks are fabricated via 4 min of microwave heating and 5 min of spark plasma sintering (SPS). The phase composition, microstructure, and valence state of the samples are investigated systematically, and the effects of Ca and Pb dopants being added into the samples to the alternative Bi sites on the cooperative optimization of the electrical and thermal transport properties are discussed. After codoping, the electrical conductivity and power factor of the samples are significantly improved by synchronously optimizing the carrier concentration and carrier mobility. The codoping of Ca and Pb reduces the lattice thermal conductivity, which is attributed to the introduction of high-density stacking faults and nanoprecipitates formed in the process of microwave synthesis and SPS, as well as the fluctuation of volume and mass. As a result, a maximum ZT value of 1.04 in Bi_0.88Ca_0.06Pb_0.06CuSeO is achieved at 873 K, which is ∼2 times larger than that of the undoped BiCuSeO. The remarkable enhancement of the thermoelectric properties combined with the simplicity and high efficiency of the synthesis method emphasizes that the preparation process will have a wide range of application prospects in the future thermoelectric field.

Advances in Versatile GeTe Thermoelectrics from Materials to Devices

Driven by the intensive efforts in the development of high-performance GeTe thermoelectrics for mass-market application in power generation and refrigeration, GeTe-based materials display a high figure of merit of >2.0 and an energy conversion efficiency beyond 10%. However, a comprehensive review on GeTe, from fundamentals to devices, is still needed. In this regard, the latest progress on the state-of-the-art GeTe is timely reviewed. The phase transition, intrinsic high carrier concentration, and multiple band edges of GeTe are fundamentally analyzed from the perspectives of the native atomic orbital, chemical bonding, and lattice defects. Then, the fabrication methods are summarized with a focus on large-scale production. Afterward, the strategies for enhancing electronic transports of GeTe by energy filtering effect, resonance doping, band convergence, and Rashba band splitting, and the methods for strengthening phonon scatterings via nanoprecipitates, planar vacancies, and superlattices, are comprehensively reviewed. Besides, the device assembly and performance are highlighted. In the end, future research directions are concluded and proposed, which enlighten the development of broader thermoelectric materials.

Solid-State Janus Nanoprecipitation Enables Amorphous-Like Heat Conduction in Crystalline Mg3 Sb2 -Based Thermoelectric Materials

Solid-state precipitation can be used to tailor material properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, unconventional Janus-type nanoprecipitates are uncovered in Mg₃ Sb_1.5 Bi_0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local comelting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism.

Exploitation of the Maximum Entropy Principle in the Study of Thermal Conductivity of Silicon, Germanium and Graphene

In this paper, we review the application of a recent formula for the lattice thermal conductivity to silicon and germanium, which are two of the most commonly used materials in electronic devices, and to graphene, one the most promising new materials. The formula, which is based on a hierarchy of macroscopic models that generalize the Cattaneo equation, is capable of reproducing the results achieved by means of the well-known Callaway formula. In semiconductors, energy transport is largely due to acoustic phonons, therefore one can choose suitable moments of their occupation numbers as variables of the models. Equations determining the time evolution of these state variables are derived from the Boltzmann–Peierls transport equation by integration, while the maximum entropy principle (MEP) is used to obtain closure relations for the extra variables. All relevant phonon scattering mechanisms are taken into account. We present numerical results regarding the steady-state and dynamical thermal conductivities of silicon, germanium, and graphene, showing their main characteristics and how these are affected by the various scatterings. The results are in good qualitative and quantitative agreement with those in the literature, confirming that MEP is a valid method for developing macroscopic models of charge and energy transport in semiconductor materials.

Waste heat recovery research - a systematic bibliometric analysis (1991 to 2020)

Human usage of non-renewable energy resources has caused many environmental issues, which include air pollution, global warming, and climate irregularities. To counter these issues, researchers have been seeking after alternative renewable energy sources and ways to manage energy more efficiently. This is where energy recovery technologies such as waste heat recovery (WHR) come into play. WHR is a form of waste to energy conversion. Waste heat can be captured and converted into usable energy instead of dumping it into the environment. In the more recent years, the WHR research field has gained great attention in the scientific community as well as in some energy-intensive industries. This article presents a bibliometric overview of the academic research on WHR over the span of 30 years from 1991 to 2020. A total of 5682 documents from Web of Science (WoS) have been retrieved and analyzed using various bibliometric methods, including performance analysis and network analysis. The analyses were performed on different actors in the field, i.e., funding agencies, journals, authors, organizations, and countries. In addition, several network mappings were done based on co-citation, co-authorship, and co-occurrences of keywords analyses. The research identified the most productive and influential actors in the field, established and emergent research topics, as well as the interrelations and collaboration patterns between different actors. The findings can be a robust roadmap for further research in this field.

First-Principles Study of Silicon-Tin Alloys as a High-Temperature Thermoelectric Material

Silicon–germanium (SiGe) alloys have sparked a great deal of attention due to their exceptional high-temperature thermoelectric properties. Significant effort has been expended in the quest for high-temperature thermoelectric materials. Combining density functional theory and electron–phonon coupling theory, it was discovered that silicon–tin (SiSn) alloys have remarkable high-temperature thermoelectric performance. SiSn alloys have a figure of merit above 2.0 at 800 K, resulting from their high conduction band convergence and low lattice thermal conductivity. Further evaluations reveal that Si_0.75Sn_0.25 is the best choice for developing the optimum ratio as a thermoelectric material. These findings will provide a basis for further studies on SiSn alloys as a potential new class of high-performance thermoelectric materials.

High-Performance n-Type Ge-Free Silicon Thermoelectric Material from Silicon Waste

Silicon waste (SW), a byproduct from the photovoltaic industry, can be a prospective and environmentally friendly source for silicon in the field of thermoelectric (TE) materials. While thermoelectricity is not as sensitive toward impurities as other semiconductor applications, the impurities within the SW still impede the enhancement of the thermoelectric figure of merit, zT. Besides, the high thermal conductivity of silicon limits its applications as a TE material. In this work, we employ traditionally metallurgical methods in industry reducing the impurities in SW to an extremely low level in an environmentally friendly and economical way, and then the thermal conductivity of purified silicon is greatly reduced due to the implementation of multiscale phonon scattering without degrading the power factor seriously. Benefiting from these strategies, from 323 to 1123 K, for the sample made from purified silicon waste, the average zT, relevant for engineering application, is increased to 0.32, higher than that of the state-of-the-art n-type Ge-free bulk silicon materials made from commercially available silicon, but the total cost of our samples is negligible.

Phonon-engineered extreme thermal conductivity materials

Materials with ultrahigh or low thermal conductivity are desirable for many technological applications, such as thermal management of electronic and photonic devices, heat exchangers, energy converters and thermal insulation. Recent advances in simulation tools (first principles, the atomistic Green's function and molecular dynamics) and experimental techniques (pump-probe techniques and microfabricated platforms) have led to new insights on phonon transport and scattering in materials and the discovery of new thermal materials, and are enabling the engineering of phonons towards desired thermal properties. We review recent discoveries of both inorganic and organic materials with ultrahigh and low thermal conductivity, highlighting heat-conduction physics, strategies used to change thermal conductivity, and future directions to achieve extreme thermal conductivities in solid-state materials.

All-Scale Hierarchical Structure Contributing to Ultralow Thermal Conductivity of Zintl Phase CaAg0.2Zn0.4Sb

TiNiSi-type Zintl phase CaAgSb can transform into LiGaGe-type Zintl phase CaAg x Zn(1- x )/2Sb when some of the Ag atoms are substituted by Zn atoms, leading to an ultralow thermal conductivity of ≈0.4 W m-1 K-1 in the whole measured temperature range of CaAg0.2Zn0.4Sb. The microstructure is then investigated by spherical aberration-corrected electron microscopy on an atomic scale, which reveals an all-scale hierarchical structure that can scatter the phonons in a wide frequency range. There exist a large quantity of CaAgSb nanometer precipitates as well as quite a lot of edge dislocations close to these nanometer precipitates, thus releasing the stress caused by the mismatch between the precipitates and the parent phase. Many twin boundaries also exist around the CaAgSb precipitates. High-density point defects contain the randomly dispersed Ag vacancies and Zn atoms substituted for the Ag atoms. All these widely distributed multidimensional defects contribute to the decrease of lattice thermal conductivity in a wide temperature range.

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.

Strategies for Manipulating Phonon Transport in Solids

In this review, we summarize the recent efforts on manipulating phonon transport in solids by using specific techniques that modify their phonon thermal conductivity (i.e., specific heat, phonon group velocity, and mean free path) and phonon thermal conductance (i.e., transmission probability and density of states). The strategies discussed for tuning thermal conductivity are as follows: large unit cell approach and liquid-like conduction for maneuvering specific heat; rattler, mini-bandgap, and phonon confinement for manipulating phonon group velocity; nanoparticles, nanosized grains, coated grains, alloy (isotope) scattering, selection rules in phonon dispersion, Grüneisen parameter, lone-pair electronics, dynamic disorder, and local static distortion for restricting mean free path. We have also included the discussion on tuning phonon thermal conductance, as thermal conduction can be viewed as a transmission process. Additionally, phonon filtering, ballistic transport, and waveguiding are discussed to alter density of states and transmission probability. We hope this review can bring meaningful insights to the researchers in the field of phonon transport in solids.

Effect of nanoinclusions on the lattice thermal conductivity of SnSe

We theoretically investigate the effect of nanoparticle(NP) inclusion on the lattice thermal conductivity (κ l ) of SnSe matrix. The theoretical approach involves the prediction of κ l by varying the radius (R), density (D 1), and volume fraction (ε) of NP in SnSe matrix. NP has strong anisotropic effect on the lattice thermal conductivity reduction along the crystallographic direction. We observe the existence of an optimal NP volume fraction that minimizes the nanocomposite's thermal conductivity. At room temperature, this value is found to be ε = 0.317 for which lattice thermal conductivity reduces by 35% with NP (R = 5 nm) compared to pure SnSe. An enhancement in the figure of merit (ZT) around room temperature opens up new opportunities for thermoelectric power generation at moderate temperatures. Even larger enhancement is possible in polycrystalline SnSe which will be helpful for thermoelectric devices.

Thermoelectric Properties of CoCrFeNiNbx Eutectic High Entropy Alloys

Bulk CoCrFeNiNb0.45 eutectic high entropy alloy (EHEA) with ultrafine-lamellar microstructure shows outstanding thermal stability. The EHEA offers opportunities for the development of thermoelectric materials. In this paper, the thermoelectric properties of a CoCrFeNiNbx (x = 0, 0.25, and 0.45) EHEA system were investigated. The results indicated that the electrical conductivity decreased with a rise in Nb content in the CoCrFeNiNbx alloys, which resulted from the increased eutectic structure and phase interface. Moreover, the thermal conductivity increased with increased Nb content at low temperature (T ≤ 473 K), while thermal conductivity decreased at high temperature (T > 573 K). The CoCrFeNiNb0.45 full eutectic high entropy alloy exhibited the lowest thermal conductivity and higher thermoelectric figure of merit (ZT) at a high temperature (T > 573 K), which shows great promise for the thermoelectric application at high temperature.

Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices

Controlling the thermal conductivity of semiconductors is of practical interest in optimizing the performance of thermoelectric and phononic devices. The insertion of inclusions of nanometer size in a semiconductor is an effective means of achieving such control; it has been proposed that the thermal conductivity of silicon could be reduced to 1 W/m/K using this approach and that a minimum in the heat conductivity would be reached for some optimal size of the inclusions. Yet the experimental verification of this design rule has been limited. In this work, we address this question by studying the thermal properties of silicon metalattices that consist of a periodic distribution of spherical inclusions with radii from 7 to 30 nm, embedded into silicon. Experimental measurements confirm that the thermal conductivity of silicon metalattices is as low as 1 W/m/K for silica inclusions and that this value can be further reduced to 0.16 W/m/K for silicon metalattices with empty pores. A detailed model of ballistic phonon transport suggests that this thermal conductivity is close to the lowest achievable by tuning the radius and spacing of the periodic inhomogeneities. This study is a significant step in elucidating the scaling laws that dictate ballistic heat transport at the nanoscale in silicon and other semiconductors.

Enhanced Thermoelectric Performance in n-Type SrTiO3/SiGe Composite

Silicon germanium (SiGe) alloys hold promise for thermoelectric power generation at high temperatures and have been applied in deep-space missions. However, enhancement of the dimensionless thermoelectric figure-of-merit (ZT) is still needed for practical civil applications of SiGe. In this work, we report high-performance oxide/SiGe bulk composites that were obtained via hot-press sintering of mixed powders composed of phosphorus (P)-doped SiGe prepared via mechanical alloying, using a ball-milling technique and La-Nb-doped SrTiO₃ (La-Nb-STO). The La-Nb-STO powder was obtained from ball milling of a bulk La-Nb-STO sample that was sintered via hot pressing of hydrothermally synthesized La-Nb-STO powder. Controlling the amount of La-Nb-STO nanoparticles added to SiGe matrix increased the power factor by optimizing the electron concentration and mobility in the composite. In addition, compared with single-phase P-doped SiGe, the second phase decreased the thermal conductivity because of additional phonon scattering at the interface. As a result, a high ZT of 0.91 was realized in the n-type oxide/SiGe bulk composite at 1000 K, which was 18% larger than that for the typical materials used in space flight missions and 5% higher than the single-phase SiGe alloys obtained in the present study. The strategy used in this study could also be viable to further enhance the ZT of nanostructured n-type SiGe and SrTiO₃-based oxide materials.

Improvement in the thermoelectric properties of porous networked Al-doped ZnO nanostructured materials synthesized via an alternative interfacial reaction and low-pressure SPS processing

This work presents a novel, simpler and faster bottom-up approach to produce relatively high performance thermoelectric Al-doped ZnO ceramics from nanopowders produced by interfacial reaction followed by consolidation with Spark Plasma Sintering.

Synergetic Approach for Superior Thermoelectric Performance in PbTe-PbSe-PbS Quaternary Alloys and Composites

Thermoelectric power generation is an energy conversion technology from heat to electric energy, which can be applied to waste heat power conversion. Among thermoelectric materials (TE), PbTe-PbSe-PbS quaternary alloys and composites are promising candidates for thermoelectric power generation applications in the mid-temperature operating range from 500 to ~850 K. Besides, the thermoelectric performance of quaternary alloys and composites is not fully optimized regarding its composition and synthesis process. In the quaternary system, PbTe-PbSe-PbS, it was found that PbS will form nanoprecipitation in the matrix of quaternary alloy for a small content of PbS (≤0.07), which reduces the lattice thermal conductivity. The power factor of PbTe-PbSe-PbS quaternary alloys can be significantly enhanced by using a band convergence in PbTe1−xSex. The band structure modifications, with the result of simultaneous PbS nanoprecipitation, give rise to a high Z T value of 2.3 at 800 K for (PbTe)0.95−x(PbSe)x(PbS)0.05. The chemical potential tuning by effective K-doping ( x = 0.02) and PbS substitution reveals a high power factor and low thermal conductivity, resulting in a comparatively high Z T value of 1.72 at 800 K. The combination of a high Seebeck coefficient and low thermal conductivity results in a very high Z T value of 1.52 at 700 K as n-type materials for low Cl-doped ( x = 0.0005) (PbTe0.93−xSe0.07Clx)0.93(PbS)0.07 composites. Therefore, this review presents the simultaneous emergence of effective chemical potential tuning, band convergence, and nanoprecipitation, giving rise to a significant enhancement of the thermoelectric performance of both p - and n -type PbTe-PbSe-PbS quaternary alloy and composite TE materials.

Phononic pathways towards rational design of nanowire heat conduction

Thermal conduction in semiconductor nanowires is controlled by the transport of atomic vibrations also known as thermal phonons. The ability of nanowires to tailor the transport of thermal phonons stems from their precise atomic scale growth coupled with high structural surface to volume ratios. Understanding and manipulating thermal transport properties at the nanoscale is central for progress in the fields of microelectronics, optoelectronics, and thermoelectrics. Here, we review state-of-the-art advances in the understanding of nanowire thermal phonon transport and the design and fabrication of nanowires with tailored thermal conduction properties. We first introduce the basic physical mechanisms of thermal conduction at the nanoscale and detail recent developments in employing nanowires as thermal materials. We discuss and provide insight on different strategies to modulate nanowire thermal properties leveraging the underlying phonon transport processes occurring in nanowires. We also highlight challenges and key areas of interest to motivate future research and create exceptional capabilities to control heat flow in nanowires.

Cross-plane heat conduction in III-V semiconductor superlattices

Thermal management is a crucial component in analyzing the performance of III-V semiconductor superlattice-based optoelectronic devices. Here we provide a rigorous physical analysis of cross-plane thermal conduction in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interfacial structural characteristics. We present a comprehensive study of superlattice thermal transport, including structure-property relations, spectral and modal descriptions, and contrast it with in-plane heat conduction thereby explaining the resultant anisotropy in III-V semiconductor superlattices. Our results provide key physical insights into rational material design for thermal modulation in optoelectronic devices.

Silver content dependent thermal conductivity and thermoelectric properties of electrodeposited antimony telluride thin films

While electrodeposited antimony telluride thin films with silver contents demonstrated promising thermoelectric properties, their thermal conductivity and the silver content dependence remain unknown. Here, we report the thermal conductivities of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ thin films with controlled annealing and temperature conditions and demonstrate the impact of silver content on thermal transport. After annealing at 160 °C, the room-temperature thermal conductivity of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ thin films increases from 0.24 to 1.59 Wm⁻¹ K⁻¹ and from 0.17 to 0.56 Wm⁻¹ K⁻¹, respectively. Using phonon transport models and X-ray diffraction measurements, we attribute the thermal conductivity increases to the crystal growth and explain the thermal conductivity variations with the degree of crystallization. Unlike electrical properties reported in previous studies, the presence of silver contents has little impact on the thermal conductivity of Ag_3.9Sb_33.6Te_62.5 and leads to a strong reduction in the thermal conductivity of AgSbTe₂ thin films. By performing transient thermal conductivity measurements at 94 °C, we find the crystallization activation energy of Ag_3.9Sb_33.6Te_62.5 and AgSbTe₂ films as 1.14 eV and 1.16 eV, respectively. Their differences reveal the role of silver in inhibiting the nucleation and growth of Sb₂Te₃ crystals and impeding thermal transport. These findings provide guidance for optimizing doping and annealing conditions of antimony tellurides for near-room-temperature thermoelectric applications.

Vertical Silicon Nanowire Thermoelectric Modules with Enhanced Thermoelectric Properties

Thermoelectric modules based on silicon nanowires (Si-NWs) have recently attracted significant attention as they show an improved thermoelectric efficiency due to a decrease in thermal conductivity. Here, we adopt a top-down fabrication method to dramatically reduce the thermal conductivity of vertical Si-NWs. The thermal conductivity of a vertical Si-NW is significantly suppressed with an increasing surface roughness, decreasing diameter, and increasing doping concentration. This large suppression is caused by enhanced phonon scattering, which depends on the phonon wavelength. The boron- and phosphorus-doped rough Si-NWs with a diameter of 200 nm and surface roughness of 6.88 nm show the lowest thermal conductivity of 10.1 and 14.8 W·m^-1·K^-1, respectively, which are 5.1- and 3.6-fold lower than that of a smooth intrinsic nanowire and 14.8- and 10.1-fold lower than that of bulk silicon. A thermoelectric module was fabricated using this doped rough Si-NW array, and its thermoelectric performance is compared with previously reported Si-NW modules. The fabricated module exhibits an excellent performance with an open circuit voltage of 216.8 mV·cm^-2 and a maximum power of 3.74 μW·cm^-2 under a temperature difference of 180 K, the highest reported for Si-NW thermoelectric modules.

Tuning phonon transport spectrum for better thermoelectric materials

The figure of merit of thermoelectric materials can be increased by suppressing the lattice thermal conductivity without degrading electrical properties. Phonons are the carriers for lattice thermal conduction, and their transport can be impeded by nanostructuring, owing to the recent progress in nanotechnology. The key question for further improvement of thermoelectric materials is how to realize ultimate structure with minimum lattice thermal conductivity. From spectral viewpoint, this means to impede transport of phonons in the entire spectral domain with noticeable contribution to lattice thermal conductivity that ranges in general from subterahertz to tens of terahertz in frequency. To this end, it is essential to know how the phonon transport varies with the length scale, morphology, and composition of nanostructures, and how effects of different nanostructures can be mutually adopted in view of the spectral domain. Here we review recent advances in analyzing such spectral impedance of phonon transport on the basis of various effects including alloy scattering, boundary scattering, and particle resonance.

Thermal management and non-reciprocal control of phonon flow via optomechanics

Engineering phonon transport in physical systems is a subject of interest in the study of materials, and has a crucial role in controlling energy and heat transfer. Of particular interest are non-reciprocal phononic systems, which in direct analogy to electric diodes, provide a directional flow of energy. Here, we propose an engineered nanostructured material, in which tunable non-reciprocal phonon transport is achieved through optomechanical coupling. Our scheme relies on breaking time-reversal symmetry by a spatially varying laser drive, which manipulates low-energy acoustic phonons. Furthermore, we take advantage of developments in the manipulation of high-energy phonons through controlled scattering mechanisms, such as using alloys and introducing disorder. These combined approaches allow us to design an acoustic isolator and a thermal diode. Our proposed device will have potential impact in phonon-based information processing, and heat management in low temperatures.

Phonon transport control is important for thermal and non-reciprocal devices. Here, Seif et al. combine heat transport in nanostructures and optomechanics into a platform for manipulating phonons with which they design an acoustic isolator and a thermal diode.

Enhancing Thermal Transport in Layered Nanomaterials

A comprehensive rational thermal material design paradigm requires the ability to reduce and enhance the thermal conductivities of nanomaterials. In contrast to the existing ability to reduce the thermal conductivity, methods that allow to enhance heat conduction are currently limited. Enhancing the nanoscale thermal conductivity could bring radical improvements in the performance of electronics, optoelectronics, and photovoltaic systems. Here, we show that enhanced thermal conductivities can be achieved in semiconductor nanostructures by rationally engineering phonon spectral coupling between materials. By embedding a germanium film between silicon layers, we show that its thermal conductivity can be increased by more than 100% at room temperature in contrast to a free standing thin-film. The injection of phonons from the cladding silicon layers creates the observed enhancement in thermal conductivity. We study the key factors underlying the phonon injection mechanism and find that the surface conditions and layer thicknesses play a determining role. The findings presented here will allow for the creation of nanomaterials with an increased thermal conductivity.

Revisiting AgCrSe2 as a promising thermoelectric material

We revisited and investigated a layer-structured thermoelectric material AgCrSe2, which has an extremely low thermal conductivity. After using both differential scanning calorimetry and a comparative laser flash method, we realized that the specific heat of this material, the main contributor to the reported low thermal conductivity, is unlikely to be way below the Dulong-Petit limit as revealed in the literature. Besides, our in situ X-ray diffraction pattern up to 873 K indicated the instability of AgCrSe2 over 723 K, where it begins to decompose into Cr2Se3 and Ag2Se. This unexpected decomposition phenomenon resulted in the gradual increment of specific heat and thermal diffusivity, hence the deterioration of the overall thermoelectric performance. We deliberately introduced Ag and Cr vacancies into the lattice for carrier concentration optimization and could achieve an optimal figure of merit of ZT ∼ 0.5 at 723 K in the nominal composition Ag0.96CrSe2 in the direction perpendicular to the sintering press. Our findings suggest that more thorough investigations are necessary to ensure that AgCrSe2 is a promising thermoelectric material.

Nanostructured Composites of Bi1-xSbx Nanoparticles and Carbon Nanotubes and the Characterization of Their Thermoelectric Properties

The impact of inclusions of carbon nanotubes (CNT) on the thermoelectric properties of nanostructured Bi_1-xSb_x alloys with an Sb content between 10 and 20% was investigated for varying amounts of CNT. Three series of Bi_1-xSb_x pellets with 0, 0.3, and 0.5 wt % CNT were synthesized by mechanical alloying followed by uniaxial pressing. The resistivity was investigated in the temperature range from 30 to 500 K, revealing an enlargement of the band gap due to nanostructuring of the Bi_1-xSb_x alloy, which is even more pronounced for alloys including CNT. This enlargement is attributed to a modification of the interface between the Bi_1-xSb_x nanoparticles by a graphene-like coating, which is formed during the fabrication process due to the addition of CNT. Measurements of the Seebeck coefficient and the thermal conductivity were also performed to determine the thermoelectric properties. In total, the CNT-containing samples show a significant improvement of the figure of merit up to 250% for the Bi_0.88Sb_0.12 composition with 0.3 wt % CNT due to the interface modification between the nanoparticles, demonstrating the beneficial effect of CNT on the thermoelectric properties.

Nanoporous PbSe-SiO2 Thermoelectric Composites

Nanoporous architecture has long been predicted theoretically for its proficiency in suppressing thermal conduction, but less concerned as a practical approach for better thermoelectric materials hitherto probably due to its technical challenges. This article demonstrates a study on nanoporous PbSe-SiO₂ composites fabricated by a facile method of mechanical alloying assisted by subsequent wet-milling and then spark plasma sintering. Owing to the formation of random nanopores and additional interface scattering, the lattice thermal conductivity is limited to a value as low as 0.56 W m^-1 K^-1 at above 600 K, almost the same low level achieved by introducing nanoscale precipitates. Besides, the room-temperature electrical transport is found to be dominated by the grain-boundary potential barrier scattering, whose effect fades away with increasing temperatures. Consequently, a maximum ZT of 1.15 at 823 K is achieved in the PbSe + 0.7 vol% SiO₂ composition with >20% increase in average ZT, indicating the great potential of nanoporous structuring toward high thermoelectric conversion efficiency.

Probing Anisotropic Thermal Conductivity of Transition Metal Dichalcogenides MX2 (M = Mo, W and X = S, Se) using Time-Domain Thermoreflectance

Transition metal dichalcogenides (TMDs) are a group of layered 2D semiconductors that have shown many intriguing electrical and optical properties. However, the thermal transport properties in TMDs are not well understood due to the challenges in characterizing anisotropic thermal conductivity. Here, a variable-spot-size time-domain thermoreflectance approach is developed to simultaneously measure both the in-plane and the through-plane thermal conductivity of four kinds of layered TMDs (MoS₂ , WS₂ , MoSe₂ , and WSe₂ ) over a wide temperature range, 80-300 K. Interestingly, it is found that both the through-plane thermal conductivity and the Al/TMD interface conductance depend on the modulation frequency of the pump beam for all these four compounds. The frequency-dependent thermal properties are attributed to the nonequilibrium thermal resistance between the different groups of phonons in the substrate. A two-channel thermal model is used to analyze the nonequilibrium phonon transport and to derive the intrinsic thermal conductivity at the thermal equilibrium limit. The measurements of the thermal conductivities of bulk TMDs serve as an important benchmark for understanding the thermal conductivity of single- and few-layer TMDs.

Phonon Surface Scattering and Thermal Energy Distribution in Superlattices

Thermal transport at small length scales has attracted significant attention in recent years and various experimental and theoretical methods have been developed to establish the reduced thermal conductivity. The fundamental understanding of how phonons move and the physical mechanisms behind nanoscale thermal transport, however, remains poorly understood. Here we move beyond thermal conductivity calculations and provide a rigorous and comprehensive physical description of thermal phonon transport in superlattices by solving the Boltzmann transport equation and using the Beckman-Kirchhoff surface scattering theory with shadowing to precisely describe phonon-surface interactions. We show that thermal transport in superlattices can be divided in two different heat transport modes having different physical properties at small length scales: layer-restricted and extended heat modes. We study how interface conditions, periodicity, and composition can be used to manipulate the distribution of thermal energy flow among such layer-restricted and extended heat modes. From predicted frequency and mean free path spectra of superlattices, we also investigate the existence of wave effects. The results and insights in this paper advance the fundamental understanding of heat transport in superlattices and the prospects of rationally designing thermal systems with tailored phonon transport properties.

Analysis of Nanoprecipitates in a Na-Doped PbTe-SrTe Thermoelectric Material with a High Figure of Merit

The dimensionless figure of merit, ZT, of bulk thermoelectric materials depends mainly on the transport properties of charge carriers and heat-carrying phonons. PbTe-4 mol % SrTe doped with 2 mol % Na (Pb_0.94Na_0.02Sr_0.04Te) is a nanostructured material system that exhibits a ZT higher than 2. The precipitate size distribution of SrTe precipitates is believed to play a key role. This raises the question of whether its performance is limited by precipitate coarsening (Ostwald ripening) at elevated temperatures. Herein, we utilize an atom-probe tomography (APT) to study the number density and mean radii of precipitates in concert with partial radial distribution functions (RDFs) of individual atoms. We find that the SrTe precipitates actually contain oxygen: SrTe_1-xO_x. We correlate this information with the overall ZT performance, specifically focusing on the electrical and lattice thermal conductivities after isothermal heat treatments at 300 and 400 °C for 7 days, followed by furnace cooling. Comparison of the samples annealed at 400 and 300 °C demonstrates significant coarsening of SrTe_1-xO_x precipitates as well as strong segregation of oxygen impurities in the SrTe_1-xO_x precipitates. Additionally, on the basis of the partial RDFs, the Na dopant atoms cluster with other Na atoms as well as with Pb, Te, and Sr atoms; clustering depends strongly on the annealing temperature and concomitantly affects the overall ZT values. We found that the coarsening slightly increases the lattice thermal conductivity and also increases the electrical conductivity, thereby having little or even a beneficial effect on the ZT values. Importantly, these findings demonstrate that APT enables quantitative analyses in three dimensions of the PbTe-4 mol % SrTe samples in addition to correlation of their properties with the thermoelectric performance.

Thermoelectric Transport in Nanocomposites

Thermoelectric materials which can convert energies directly between heat and electricity are used for solid state cooling and power generation. There is a big challenge to improve the efficiency of energy conversion which can be characterized by the figure of merit (ZT). In the past two decades, the introduction of nanostructures into bulk materials was believed to possibly enhance ZT. Nanocomposites is one kind of nanostructured material system which includes nanoconstituents in a matrix material or is a mixture of different nanoconstituents. Recently, nanocomposites have been theoretically proposed and experimentally synthesized to be high efficiency thermoelectric materials by reducing the lattice thermal conductivity due to phonon-interface scattering and enhancing the electronic performance due to manipulation of electron scattering and band structures. In this review, we summarize the latest progress in both theoretical and experimental works in the field of nanocomposite thermoelectric materials. In particular, we present various models of both phonon transport and electron transport in various nanocomposites established in the last few years. The phonon-interface scattering, low-energy electrical carrier filtering effect, and miniband formation, etc., in nanocomposites are discussed.

A Practical Approach to Evaluate Lattice Thermal Conductivity in Two-Phase Thermoelectric Alloys for Energy Applications

Modelling of the effects of materials’ microstructure on thermal transport is an essential tool for materials design, and is particularly relevant for thermoelectric (TE) materials converting heat into electrical energy. Precipitates dispersed in a TE matrix act as phonon-scattering centers, thereby reducing thermal conductivity. We introduce a practical approach to tailor a definite precipitate size distribution for a given TE matrix, and implement it for PbTe. We evaluate vibrational properties from first principles, and develop an expression for phonon relaxation time that considers both matrix vibrational properties and precipitate size distribution. This provides us with guidelines for optimizing thermal conductivity.

Understanding Phonon Scattering by Nanoprecipitates in Potassium-Doped Lead Chalcogenides

We present a comprehensive experimental and theoretical study of phonon scattering by nanoprecipitates in potassium-doped PbTe, PbSe, and PbS. We highlight the role of the precipitate size distribution measured by microscopy, whose tuning allows for thermal conductivities lower than the limit achievable with a single size. The correlation between the size distribution and the contributions to thermal conductivity from phonons in different frequency ranges provides a physical basis to the experimentally measured thermal conductivities, and a criterion to estimate the lowest achievable thermal conductivity. The results have clear implications for efficiency enhancements in nanostructured bulk thermoelectrics.

Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires

Recent experimental advances have revealed that the mean free path (mfp) of phonons contributing significantly to thermal transport in crystalline semiconductors can be several microns long. Almost all of these experiments are based on bulk and thin film materials and use techniques that are not directly applicable to nanowires. By developing a process with which we could fabricate multiple electrically contacted and suspended segments on individual heavily doped smooth Silicon nanowires, we measured phonon transport across varying length scales using a DC self-heating technique. Our measurements show that diffusive thermal transport is still valid across O(100) nm length scales, supporting the diffuse nature of phonon-boundary scattering even on smooth nanowire surfaces. Our work also showcases the self-heating technique as an important alternative to the thermal bridge technique to measure phonon transport across short length scales relevant to mapping the phonon mfp spectrum in nanowires.

Sb induces both doping and precipitation for improving the thermoelectric performance of elemental Te

Eco-friendly Sb-doping leads to a zT of 0.9 in elemental Te.

Enhancement in thermoelectric performance of SiGe nanoalloys dispersed with SiC nanoparticles

The enhancement of thermoelectric figure-of-merit with SiC dispersion in SiGe nanostructured alloy.

Improving the zT value of thermoelectrics by nanostructuring: tuning the nanoparticle morphology of Sb2Te3by using ionic liquids

Morphology and thermoelectric properties of Sb₂Te₃nanoparticles synthesized in ionic liquids are controlled by the cation and anion.

Thermal conductivity of individual silicon nanoribbons

The thermal conductivities of two groups of silicon nanoribbons of ∼20 and ∼30 nm thickness and various widths have been measured and analyzed through combining the Callaway model and the Fuchs-Sondheimer (FS) reduction function. The results show that while the data for the ∼30 nm thick ribbons can be well-explained by the classical size effect, the measured thermal conductivities for the ∼20 nm thick ribbons deviate from the prediction remarkably, and size effects beyond phonon-boundary scattering must be considered. The measurements of the Young's modulus of the thin nanoribbons yield significantly lower values than the corresponding bulk value, which could lead to a reduced phonon group velocity and subsequently thermal conductivity. This study helps to build a regime map for thermal conductivity versus nanostructures' surface-area-to-volume ratio that clearly delineates two regions where size effects beyond the Casimir limit are important or not important.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Impact of Phonon Surface Scattering on Thermal Energy Distribution of Si and SiGe Nanowires

Thermal transport in nanostructures has attracted considerable attention in the last decade but the precise effects of surfaces on heat conduction have remained unclear due to a limited accuracy in the treatment of phonon surface scattering phenomena. Here, we investigate the impact of phonon-surface scattering on the distribution of thermal energy across phonon wavelengths and mean free paths in Si and SiGe nanowires. We present a rigorous and accurate description of phonon scattering at surfaces and predict and analyse nanowire heat spectra for different diameters and surface conditions. We show that the decrease in the diameter and increased roughness and correlation lengths makes the heat phonon spectra significantly shift towards short wavelengths and mean free paths. We also investigate the emergence of phonon confinement effects for small diameter nanowires and different surface scattering properties. Computed results for bulk materials show excellent agreement with recent experimentally-based approaches that reconstruct the mean-free-path heat spectra. Our phonon surface scattering model allows for an accurate theoretical extraction of heat spectra in nanowires and contributes to elucidate the development of critical phonon transport modes such as phonon confinement and coherent interference effects.