Lateral buckling mechanics in silicon nanowires on elastomeric substrates

Realizing high stretch ratio of flexible wavy circuit via laser carving

Stretchable wavy circuit is an essential component in flexible devices, which have wide applications in various fields. In the industrial field, the stretching ability of the circuit is a crucial factor for flexible devices. Therefore, this study proposes laser carving method to increase both stretch ratio and device resolution of the flexible device. The results obtained from the experiment and finite element analysis verifies that laser carving on the wavy circuit increases the maximum stretch ratio of wavy circuit. The obtained analytic model confirms that laser carving generates tilted section on the wavy circuit, and reduces the bending rigidity of the curvy point of the wavy circuit. The study also verified that laser carved groove induces crack propagation into vertical to the circuit direction, so that the laser carved wavy circuit is less likely to disconnect than uncarved wavy circuit. Due to the reduced bending rigidity and crack induce, the wavy circuit stretches more than the conventional uncarved wavy circuit.

Recent Advances in Stretchable and Wearable Capacitive Electrophysiological Sensors for Long-Term Health Monitoring

Over the past several years, wearable electrophysiological sensors with stretchability have received significant research attention because of their capability to continuously monitor electrophysiological signals from the human body with minimal body motion artifacts, long-term tracking, and comfort for real-time health monitoring. Among the four different sensors, i.e., piezoresistive, piezoelectric, iontronic, and capacitive, capacitive sensors are the most advantageous owing to their reusability, high durability, device sterilization ability, and minimum leakage currents between the electrode and the body to reduce the health risk arising from any short circuit. This review focuses on the development of wearable, flexible capacitive sensors for monitoring electrophysiological conditions, including the electrode materials and configuration, the sensing mechanisms, and the fabrication strategies. In addition, several design strategies of flexible/stretchable electrodes, body-to-electrode signal transduction, and measurements have been critically evaluated. We have also highlighted the gaps and opportunities needed for enhancing the suitability and practical applicability of wearable capacitive sensors. Finally, the potential applications, research challenges, and future research directions on stretchable and wearable capacitive sensors are outlined in this review.

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Ultrathin silicon nanowires (SiNWs) are ideal 1D channels to construct high performance nanoelectronics and sensors. We here report on a high-density catalytic growth of orderly ultrathin SiNWs, with diameter down toDnw=27±2nmand narrow NW-to-NW spacing of onlySnw ∼80 nm, without the use of high-resolution lithography. This has been accomplished via a terrace-confined strategy, where tiny indium (In) droplets move on sidewall terraces to absorb precoated amorphous Si layer as precursor and produce self-aligned SiNW array. It is found that, under proper parameter control, a tighter terrace-step confinement can help to scale the dimensions of the SiNW array down to the extremes that have not been reported before, while maintaining still a stable guiding growth over complex contours. Prototype SiNW field effect transistors demonstrate a highI_on/I_offcurrent ratio ∼10⁷, low leakage current of ∼0.3 pA and steep subthreshold swing of 220 mV dec^-1. These results highlight the unexplored potential of catalytic growth in advanced nanostructure fabrication that is highly relevant for scalable SiNW logic and sensor applications.

Interface Design for Stretchable Electronic Devices

Stretchable electronics has emerged over the past decade and is now expected to bring form factor-free innovation in the next-generation electronic devices. Stretchable devices have evolved with the synthesis of new soft materials and new device architectures that require significant deformability while maintaining the high device performance of the conventional rigid devices. As the mismatch in the mechanical stiffness between materials, layers, and device units is the major challenge for stretchable electronics, interface control in varying scales determines the device characteristics and the level of stretchability. This article reviews the recent advances in interface control for stretchable electronic devices. It summarizes the design principles and covers the representative approaches for solving the technological issues related to interfaces at different scales: i) nano- and microscale interfaces between materials, ii) mesoscale interfaces between layers or microstructures, and iii) macroscale interfaces between unit devices, substrates, or electrical connections. The last section discusses the current issues and future challenges of the interfaces for stretchable devices.

Microscopic Deformation Modes and Impact of Network Anisotropy on the Mechanical and Electrical Performance of Five-fold Twinned Silver Nanowire Electrodes

Silver nanowire (AgNW) networks show excellent optical, electrical, and mechanical properties, which make them ideal candidates for transparent electrodes in flexible and stretchable devices. Various coating strategies and testing setups have been developed to further improve their stretchability and to evaluate their performance. Still, a comprehensive microscopic understanding of the relationship between mechanical and electrical failure is missing. In this work, the fundamental deformation modes of five-fold twinned AgNWs in anisotropic networks are studied by large-scale SEM straining tests that are directly correlated with corresponding changes in the resistance. A pronounced effect of the network anisotropy on the electrical performance is observed, which manifests itself in a one order of magnitude lower increase in resistance for networks strained perpendicular to the preferred wire orientation. Using a scale-bridging microscopy approach spanning from NW networks to single NWs to atomic-scale defects, we were able to identify three fundamental deformation modes of NWs, which together can explain this behavior: (i) correlated tensile fracture of NWs, (ii) kink formation due to compression of NWs in transverse direction, and (iii) NW bending caused by the interaction of NWs in the strained network. A key observation is the extreme deformability of AgNWs in compression. Considering HRTEM and MD simulations, this behavior can be attributed to specific defect processes in the five-fold twinned NW structure leading to the formation of NW kinks with grain boundaries combined with V-shaped surface reconstructions, both counteracting NW fracture. The detailed insights from this microscopic study can further improve fabrication and design strategies for transparent NW network electrodes.

Parallel Nanoimprint Forming of One-Dimensional Chiral Semiconductor for Strain-Engineered Optical Properties

The low-dimensional, highly anisotropic geometries, and superior mechanical properties of one-dimensional (1D) nanomaterials allow the exquisite strain engineering with a broad tunability inaccessible to bulk or thin-film materials. Such capability enables unprecedented possibilities for probing intriguing physics and materials science in the 1D limit. Among the techniques for introducing controlled strains in 1D materials, nanoimprinting with embossed substrates attracts increased attention due to its capability to parallelly form nanomaterials into wrinkled structures with controlled periodicities, amplitudes, orientations at large scale with nanoscale resolutions. Here, we systematically investigated the strain-engineered anisotropic optical properties in Te nanowires through introducing a controlled strain field using a resist-free thermally assisted nanoimprinting process. The magnitude of induced strains can be tuned by adjusting the imprinting pressure, the nanowire diameter, and the patterns on the substrates. The observed Raman spectra from the chiral-chain lattice of 1D Te reveal the strong lattice vibration response under the strain. Our results suggest the potential of 1D Te as a promising candidate for flexible electronics, deformable optoelectronics, and wearable sensors. The experimental platform can also enable the exquisite mechanical control in other nanomaterials using substrate-induced, on-demand, and controlled strains.

Strong structural occupation ratio effect on mechanical properties of silicon carbide nanowires

Materials' mechanical properties highly depend on their internal structures. Designing novel structure is an effective route to improve materials' performance. One-dimensional disordered (ODD) structure is a kind of particular structure in silicon carbide (SiC), which highly affects its mechanical properties. Herein, we show that SiC nanowires (NWs) containing ODD structure (with an occupation ratio of 32.6%) exhibit ultrahigh tensile strength and elastic strain, which are up to 13.7 GPa and 12% respectively, approaching the ideal theoretical limit. The ODD structural occupation ratio effect on mechanical properties of SiC NWs has been systematically studied and a saddle shaped tendency for the strength versus occupation ratio is firstly revealed. The strength increases with the increase of the ODD occupation ratio but decreases when the occupation ratio exceeds a critical value of ~ 32.6%, micro twins appear in the ODD region when the ODD segment increases and soften the ODD segment, finally results in a decrease of the strength.

Planar Growth, Integration, and Applications of Semiconducting Nanowires

Silicon and other inorganic semiconductor nanowires (NWs) have been extensively investigated in the last two decades for constructing high-performance nanoelectronics, sensors, and optoelectronics. For many of these applications, these tiny building blocks have to be integrated into the existing planar electronic platform, where precise location, orientation, and layout controls are indispensable. In the advent of More-than-Moore's era, there are also emerging demands for a programmable growth engineering of the geometry, composition, and line-shape of NWs on planar or out-of-plane 3D sidewall surfaces. Here, the critical technologies established for synthesis, transferring, and assembly of NWs upon planar surface are examined; then, the recent progress of in-plane growth of horizontal NWs directly upon crystalline or patterned substrates, constrained by using nanochannels, an epitaxial interface, or amorphous thin film precursors is discussed. Finally, the unique capabilities of planar growth of NWs in achieving precise guided growth control, programmable geometry, composition, and line-shape engineering are reviewed, followed by their latest device applications in building high-performance field-effect transistors, photodetectors, stretchable electronics, and 3D stacked-channel integration.

Bioresorbable, Miniaturized Porous Silicon Needles on a Flexible Water-Soluble Backing for Unobtrusive, Sustained Delivery of Chemotherapy

Conventional melanoma therapies suffer from the toxicity and side effects of repeated treatments due to the aggressive and recurrent nature of melanoma cells. Less-invasive topical chemotherapies by utilizing polymeric microneedles have emerged as an alternative, but the sustained, long-lasting release of drug cargos remains challenging. In addition, the size of the microneedles is relatively bulky for the small, curvilinear, and exceptionally sensitive cornea for the treatment of ocular melanoma. Here, we report a design of bioresorbable, miniaturized porous-silicon (p-Si) needles with covalently linked drug cargos at doses comparable to those of conventional polymeric microneedles. The p-Si needles are built on a water-soluble film as a temporary flexible holder that can be intimately interfaced with the irregular surface of living tissues, followed by complete dissolution with saline solution within 1 min. Consequently, the p-Si needles remain embedded inside tissues and then undergo gradual degradation, allowing for sustained release of the drug cargos. Its utility in unobtrusive topical delivery of chemotherapy with minimal side effects is demonstrated in a murine melanoma model.

Fabrication of a Highly Stretchable, Wrinkle-Free Electrode with Switchable Transparency Using a Free-Standing Silver Nanofiber Network and Shape Memory Polymer Substrate

Transparent and stretchable electrodes (TSEs) are a key technology for the next generation of stretchable electronics and optoelectronics. Metallic nanofibers are widely used because of their good optoelectrical properties, but they demonstrate low stretchability. To enhance stretchability, fabricating in-plane buckled nanofibers with the aid of a prestrained substrate has become crucial in this research field. Here, a composite comprising shape memory polymer-TSE (SMP-TSE) using crosslinked polycyclooctene as a substrate, which shows wrinkle-free deformation and switchable optical transparency, is fabricated. Because of its considerable elongation without residual strain and the shape memory behavior of polycyclooctene, in-plane buckled nanofibers are formed effectively. For fabrication of SMP-TSE, continuous and thin metallic nanofiber that can maintain its structural integrity is required; therefore, electrospinning and an ultraviolet reduction process to create a free-standing, conductive, nanofiber network are used. Because of its in-plane buckled nanofibers, the electrode maintained its resistance during 3000 cycles of a bending test and 900 cycles of a tensile test. Furthermore, SMP-TSE is able to electrically control its temperature, optical transparency, elastic modulus, and shape memory behavior. Finally, the use of SMP-TSE in a smart display that can control its optical and mechanical properties is demonstrated.

Transparent and Flexible Electronics Assembled with Metallic Nanowire-Layered Nondrying Glycerogel

There has been increasing demand for transparent and mechanically durable electrical conductors for their uses in wearable electronic devices. It is common to layer metallic nanowires on transparent but stiff poly(dimethylsiloxane) (PDMS) or stretchable but opaque Ecoflex-based substrates. Here, we hypothesized that layering metallic nanowires on a stretchable and hygroscopic gel would allow us to assemble a transparent, stretchable, and durable conductor. The hygroscopic property of the gel was attained by partially replacing water in the preformed polyacrylamide hydrogel with glycerol. The resulting gel, denoted as a glycerogel, could remain hydrated for over 6 months in air by taking up water molecules from the air. The glycerogel was tailored to be stretchable up to 8 times its original length by tuning the amount of the cross-linker and acrylamide. The resulting glycerogel allowed for deposition of wavy silver nanowires using the prestrain method up to 400% prestrain, without causing kinks and interfacial cracks often found with nanowires layered onto PDMS. With a prestrain of 100%, the resulting nanowire-gel conductor exhibited optical transparency (85%) and electrical conductivity (17.1 ohm/sq) even after 5000 cycles of deformation. The results of this study would broadly be useful to improve the performance of the next generation of flexible electronic devices.

Failure mode transformation of ZnO nanowires under uniaxial compression: from phase transition to buckling

The failure modes of ZnO nanowires (NWs) with hexagonal cross section subjected to a uniaxial load are systematically investigated by using molecular dynamics (MD) simulations and two theoretical models considering the surface effect. Our results show that two different failure modes of the phase transition and buckling are triggered when the NWs are under uniaxial compression along the [0001] direction, in which the transformation between the two modes is related to the slenderness ratios of the NWs. Such slenderness-ratio-dependent mode transformation is mainly attributed to the competition between the critical stresses of phase transition and buckling. The Euler and Timoshenko models considering surface effect are further proposed to derive the critical slenderness for such mode transformation. The obtained analytical threshold values agree well with those of present MD simulations. Our results should be of great help for shedding some light on the design and application of functional devices based on ZnO NWs.

Deterministic Assembly of Three-Dimensional Suspended Nanowire Structures

Controlled assembly of nanowire three-dimensional (3D) geometry in an addressable way can lead to advanced 3D device integration and application. By combining a deterministic planar nanowire assembly and a transfer process, we show here a versatile method to construct vertically protruding and suspending nanowire structures. The method harnesses the merits from both processes to yield positional and geometric control in individual nanowires. Multiple transfers can further lead to hierarchical multiwire 3D structures. Assembled 3D nanowire structures have well-defined on-substrate terminals that allow scalable addressing and integration. Proof-of-concept nanosenors based on assembled 3D nanowire structures can achieve high sensitivity in force detection.

Ultrasoft, Adhesive and Millimeter Scale Epidermis Electronic Sensor for Real-Time Enduringly Monitoring Skin Strain

Epidermal electronic sensors (EESs) possess great advantages in the real-time and enduring monitoring of human vital information compared to the traditional medical device for intimately making contact with human skin. Skin strain is a significant and effective routine to monitor motion, heart rate, wrist pulse, and skin growth in wound healing. In this paper, a novel skin sensor combined with a ternary conductive nanocomposite (Carbon black (CB)/Decamethylcyclopentasiloxane (D5)/Silbione) and a two-stage serpentine connector is designed and fabricated to monitor skin strain. The ultrasoft (~2 kPa) and adhesive properties of the ternary conductive nanocomposite ensure the capacity of the EES to intimately couple with human skin in order to improve accuracy with a relative error of 3.39% at strain 50% as well as a large strain range (0~50%) and gauge factor (GF ~2.5). The millimeter scale EES (~5 mm × 1 mm × 100 μm), based on the micro-nano fabrication technique, consisted of a two-stage serpentine connector and screen print of the ternary conductive nanocomposite. EESs with high comprehensive performance (electrical and mechanical properties) are fabricated to confirm the analytical results and monitor the motion of a human hand. The good agreement between experimental and analytical results paves the way for bettering monitoring of skin growth during wound healing in order to avoid necrosis and scarring. This EES in monitoring the motion of a human exhibit presents a promising application for assisting prosthetic movement.

In-Plane Nanowires with Arbitrary Shapes on Amorphous Substrates by Artificial Epitaxy

The challenge of nanowire assembly is still one of the major obstacles toward their efficient integration into functional systems. One strategy to overcome this obstacle is the guided growth approach, in which the growth of in-plane nanowires is guided by epitaxial and graphoepitaxial relations with the substrate to yield dense arrays of aligned nanowires. This method relies on crystalline substrates which are generally expensive and incompatible with silicon-based technologies. In this work, we expand the guided growth approach into noncrystalline substrates and demonstrate the guided growth of horizontal nanowires along straight and arbitrarily shaped amorphous nanolithographic open guides on silicon wafers. Nanoimprint lithography is used as a high-throughput method for the fabrication of the high-resolution guiding features. We first grow five different semiconductor materials (GaN, ZnSe, CdS, ZnTe, and ZnO) along straight ridges and trenches, demonstrating the generality of this method. Through crystallographic analysis we find that despite the absence of any epitaxial relations with the substrate, the nanowires grow as single crystals in preferred crystallographic orientations. To further expand the guided growth approach beyond straight nanowires, GaN and ZnSe were grown also along curved and kinked configurations to form different shapes, including sinusoidal and zigzag-shaped nanowires. Photoluminescence and cathodoluminescence were used as noninvasive tools to characterize the sine wave-shaped nanowires. We discuss the similarities and differences between in-plane nanowires grown by epitaxy/graphoepitaxy and artificial epitaxy in terms of generality, morphology, crystallinity, and optical properties.

Flexible elastomer patch with vertical silicon nanoneedles for intracellular and intratissue nanoinjection of biomolecules

Vertically ordered arrays of silicon nanoneedles (Si NNs), due to their nanoscale dimension and low cytotoxicity, could enable minimally invasive nanoinjection of biomolecules into living biological systems such as cells and tissues. Although production of these Si NNs on a bulk Si wafer has been achieved through standard nanofabrication technology, there exists a large mismatch at the interface between the rigid, flat, and opaque Si wafer and soft, curvilinear, and optically transparent biological systems. Here, we report a unique methodology that is capable of constructing vertically ordered Si NNs on a thin layer of elastomer patch to flexibly and transparently interface with biological systems. The resulting outcome provides important capabilities to form a mechanically elastic interface between Si NNs and biological systems, and simultaneously enables direct imaging of their real-time interactions under the transparent condition. We demonstrate its utility in intracellular, intradermal, and intramuscular nanoinjection of biomolecules into various kinds of biological cells and tissues at their length scales.

Gunn-Hilsum Effect in Mechanically Strained Silicon Nanowires: Tunable Negative Differential Resistance

Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy subbands. This effect was observed in semiconductors like GaAs which has a direct bandgap of very low effective mass and an indirect subband of high effective mass which lies ~300 meV above the former. In contrast to GaAs, bulk silicon has a very high energy spacing (~1 eV) which renders the initiation of transfer-induced NDR unobservable. Using Density Functional Theory (DFT), semi-empirical 10 orbital (sp³d⁵s^*) Tight Binding and Ensemble Monte Carlo (EMC) methods we show for the first time that (a) Gunn Effect can be induced in silicon nanowires (SiNW) with diameters of 3.1 nm under +3% strain and an electric field of 5000 V/cm, (b) the onset of NDR in the I-V characteristics is reversibly adjustable by strain and (c) strain modulates the resistivity by a factor 2.3 for SiNWs of normal I-V characteristics i.e. those without NDR. These observations are promising for applications of SiNWs in electromechanical sensors and adjustable microwave oscillators. It is noteworthy that the observed NDC is different in principle from Esaki-Diode and Resonant Tunneling Diodes (RTD) in which NDR originates from tunneling effect.

Strain Mapping and Raman Spectroscopy of Bent GaP and GaAs Nanowires

Strain engineering of nanowires (NWs) has been recognized as a powerful strategy for tuning the optical and electronic properties of nanoscale semiconductors. Therefore, the characterization of the strains with nanometer-scale spatial resolution is of great importance for various promising applications. In the present work, we synthesized single-crystalline zinc blende phase GaP and GaAs NWs using the chemical vapor transport method and visualized their bending strains (up to 3%) with high precision using the nanobeam electron diffraction technique. The strain mapping at all crystallographic axes revealed that (i) maximum strain exists along the growth direction ([111]) with the tensile and compressive strains at the outer and inner parts, respectively; (ii) the opposite strains appeared along the perpendicular direction ([2̅11]); and (iii) the tensile strain was larger than the coexisting compressive strain at all axes. The Raman spectrum collected for individual bent NWs showed the peak broadening and red shift of the transverse optical modes that were well-correlated with the strain maps. These results are consistent with the larger mechanical modulus of GaP than that of GaAs. Our work provides new insight into the bending strain of III-V semiconductors, which is of paramount importance in the performance of flexible or bendable electronics.

Deterministic Line-Shape Programming of Silicon Nanowires for Extremely Stretchable Springs and Electronics

Line-shape engineering is a key strategy to endow extra stretchability to 1D silicon nanowires (SiNWs) grown with self-assembly processes. We here demonstrate a deterministic line-shape programming of in-plane SiNWs into extremely stretchable springs or arbitrary 2D patterns with the aid of indium droplets that absorb amorphous Si precursor thin film to produce ultralong c-Si NWs along programmed step edges. A reliable and faithful single run growth of c-SiNWs over turning tracks with different local curvatures has been established, while high resolution transmission electron microscopy analysis reveals a high quality monolike crystallinity in the line-shaped engineered SiNW springs. Excitingly, in situ scanning electron microscopy stretching and current-voltage characterizations also demonstrate a superelastic and robust electric transport carried by the SiNW springs even under large stretching of more than 200%. We suggest that this highly reliable line-shape programming approach holds a strong promise to extend the mature c-Si technology into the development of a new generation of high performance biofriendly and stretchable electronics.

Nanotransplantation Printing of Crystallographic-Orientation-Controlled Single-Crystalline Nanowire Arrays on Diverse Surfaces

The fabrication of a highly ordered array of single-crystalline nanostructures prepared from solution-phase or vapor-phase synthesis methods is extremely challenging due to multiple difficulties of spatial arrangement and control of crystallographic orientation. Herein, we introduce a nanotransplantation printing (NTPP) technique for the reliable fabrication, transfer, and arrangement of single-crystalline Si nanowires (NWs) on diverse substrates. NTPP entails (1) formation of nanoscale etch mask patterns on conventional low-cost Si via nanotransfer printing, (2) two-step combinatorial plasma etching for defining Si NWs, and (3) detachment and transfer of the NWs onto various receiver substrates using an infiltration-type polymeric transfer medium and a solvent-assisted adhesion switching mechanism. Using this approach, high-quality, highly ordered Si NWs can be formed on almost any type of surface including flexible plastic substrates, biological surfaces, and deep-trench structures. Moreover, NTPP provides controllability of the crystallographic orientation of NWs, which is confirmed by the successful generation of (100)- and (110)-oriented Si NWs with different properties. The outstanding electrical properties of the NWs were confirmed by fabricating and characterizing Schottky junction field-effect transistors. Furthermore, exploiting the highly flexible nature of the NWs, a high-performance piezoresistive strain sensor, with a high gauge factor over 200 was realized.

Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers

Shape memory polymers (SMPs) can remember two or more distinct shapes, and thus can have a lot of potential applications. This paper presents combined experimental and theoretical studies on the wrinkling of single-crystal Si ribbons on SMPs and the temperature dependent evolution. Using the shape memory effect of heat responsive SMPs, this study provides a method to build wavy forms of single-crystal silicon thin films on top of SMP substrates. Silicon ribbons obtained from a Si-on-insulator (SOI) wafer are released and transferred onto the surface of programmed SMPs. Then such bilayer systems are recovered at different temperatures, yielding well-defined, wavy profiles of Si ribbons. The wavy profiles are shown to evolve with time, and the evolution behavior strongly depends on the recovery temperature. At relatively low recovery temperatures, both wrinkle wavelength and amplitude increase with time as evolution progresses. Finite element analysis (FEA) accounting for the thermomechanical behavior of SMPs is conducted to study the wrinkling of Si ribbons on SMPs, which shows good agreement with experiment. Merging of wrinkles is observed in FEA, which could explain the increase of wrinkle wavelength observed in the experiment. This study can have important implications for smart stretchable electronics, wrinkling mechanics, stimuli-responsive surface engineering, and advanced manufacturing.

Buckling-driven self-assembly of self-similar inspired micro/nanofibers for ultra-stretchable electronics

Self-similar structures are capable of highly enhancing the deformability of stretchable electronics. We presented a self-assembly method based on the tunable buckling of serpentine fiber-based interconnects (FiberBIs), which are deposited using our presented helix electrohydrodynamic printing (HE-printing) technique, to fabricate self-similar structures with enhanced stretchability (up to 250%). It provides a low-cost, printing-based approach for the generation of large-scale self-similar FiberBIs. Distinct buckling behaviors and modes occur under specific conditions. To elucidate the mechanics governing this phenomenon, we present detailed experimental and theoretical studies of the buckling mechanics of serpentine microfibers on compliant substrates. Firstly, the effect of the magnitude and direction of prestrain on the buckling behavior of a fiber-on-substrate is discussed. Secondly, the critical geometry of a serpentine fiber as a key parameter for fabricating uniform self-similar fibers is also figured out. Finally, the cross-sectional geometry of the fiber as a judgment criterion for determining the in-surface or out-of-surface buckling of the fiber is established. The investigation can guide the fabrication process of large-scale self-similar structures for high-performance electronic devices with extreme stretchability.

Programmable, reversible and repeatable wrinkling of shape memory polymer thin films on elastomeric substrates for smart adhesion

Programmable, reversible and repeatable wrinkling of shape memory polymer (SMP) thin films on elastomeric polydimethylsiloxane (PDMS) substrates is realized, by utilizing the heat responsive shape memory effect of SMPs. The dependencies of wrinkle wavelength and amplitude on program strain and SMP film thickness are shown to agree with the established nonlinear buckling theory. The wrinkling is reversible, as the wrinkled SMP thin film can be recovered to the flat state by heating up the bilayer system. The programming cycle between wrinkle and flat is repeatable, and different program strains can be used in different programming cycles to induce different surface morphologies. Enabled by the programmable, reversible and repeatable SMP film wrinkling on PDMS, smart, programmable surface adhesion with large tuning range is demonstrated.

Review of Flexible Temperature Sensing Networks for Wearable Physiological Monitoring

Physiological temperature varies temporally and spatially. Accurate and real-time detection of localized temperature changes in biological tissues regardless of large deformation is crucial to understand thermal principle of homeostasis, to assess sophisticated health conditions, and further to offer possibilities of building a smart healthcare and medical system. Additionally, continuous temperature mapping in flexible and stretchable formats opens up many other potential areas, such as artificially electronic skins and reflection of emotional changes. This review exploits a comprehensive investigation onto recent advances in flexible temperature sensors, stretchable sensor networks, and platforms constructed in soft and compliant formats for wearable physiological monitoring. The most recent examples of flexible temperature sensors are first discussed regarding to their materials, structures, electrical and mechanical properties; temperature sensing network technologies in new materials and structural designs are then presented based on platforms comprised of multiple physical sensors and stretchable electronics. Finally, wearable applications of the sensing network are described, such as detection of human activities, monitoring of health conditions, and emotion-related bodily sensations. Conclusions are made with emphasis on critical issues and new trends in the field of wearable temperature sensor network technologies.

Bent Polytypic ZnSe and CdSe Nanowires Probed by Photoluminescence

Nanowires (NWs) have witnessed tremendous development over the past two decades owing to their varying potential applications. Semiconductor NWs often contain stacking faults due to the presence of coexisting phases, which frequently hampers their use. Herein, it is investigated how stacking faults affect the optical properties of bent ZnSe and CdSe NWs, which are synthesized using the vapor transport method. Polytypic zinc blende-wurtzite structures are produced for both these NWs by altering the growth conditions. The NWs are bent by the mechanical buckling of poly(dimethylsilioxane), and micro-photoluminescence (PL) spectra were then collected for individual NWs with various bending strains (0-2%). The PL measurements show peak broadening and red shifts of the near-band-edge emission as the bending strain increases, indicating that the bandgap decreases with increasing the bending strain. Remarkably, the bandgap decrease is more significant for the polytypic NWs than for the single phase NWs. This work provides insights into flexible electronic devices of 1D nanostructures by engineering the polytypic structures.

Biaxial Stretchability and Transparency of Ag Nanowire 2D Mass-Spring Networks Prepared by Floating Compression

Networks of silver nanowires (Ag NWs) have been considered as promising materials for stretchable and transparent conductors. Despite various improvements of their optoelectronic and electromechanical properties over the past few years, Ag NW networks with a sufficient stretchability in multiple directions that is essential for the accommodation of the multidirectional strains of human movement have seldom been reported. For this paper, biaxially stretchable, transparent conductors were developed based on 2D mass-spring networks of wavy Ag NWs. Inspired by the traditional papermaking process, the 2D wavy networks were produced by floating Ag NW networks on the surface of water and subsequently applying biaxial compression to them. It was demonstrated that this floating-compression process can reduce the friction between the Ag NW-water interfaces, providing a uniform and isotropic in-plane waviness for the networks without buckling or cracking. The resulting Ag NW networks that were transferred onto elastomeric substrates successfully acted as conductors with an excellent transparency, conductivity, and electromechanical stability under a biaxial strain of 30%. The strain sensors that are based on the prepared conductors demonstrated a great potential for the enhanced performances of future wearable devices.

Highly Stretchable Potentiometric pH Sensor Fabricated via Laser Carbonization and Machining of Carbon-Polyaniline Composite

The development of stretchable sensors has recently attracted considerable attention. These sensors have been used in wearable and robotics applications, such as personalized health-monitoring, motion detection, and human-machine interfaces. Herein, we report on a highly stretchable electrochemical pH sensor for wearable point-of-care applications that consists of a pH-sensitive working electrode and a liquid-junction-free reference electrode, in which the stretchable conductive interconnections are fabricated by laser carbonizing and micromachining of a polyimide sheet bonded to an Ecoflex substrate. This method produces highly porous carbonized 2D serpentine traces that are subsequently permeated with polyaniline (PANI) as the conductive filler, binding material, and pH-sensitive membrane. The experimental and simulation results demonstrate that the stretchable serpentine PANI/C-PI interconnections with an optimal trace width of 0.3 mm can withstand elongations of up to 135% and are robust to more than 12 000 stretch-and-release cycles at 20% strain without noticeable change in the resistance. The pH sensor displays a linear sensitivity of -53 mV/pH (r² = 0.976) with stable performance in the physiological range of pH 4-10. The sensor shows excellent stability to applied longitudinal and transverse strains up to 100% in different pH buffer solutions with a minimal deviation of less than ±4 mV. The material biocompatibility is confirmed with NIH 3T3 fibroblast cells via PrestoBlue assays.

Mechanisms and Materials of Flexible and Stretchable Skin Sensors

Wearable technology has attracted significant public attention and has generated huge societal and economic impact, leading to changes of both personal lifestyles and formats of healthcare. An important type of devices in wearable technology is flexible and stretchable skin sensors used primarily for biophysiological signal sensing and biomolecule analysis on skin. These sensors offer mechanical compatibility to human skin and maximum compliance to skin morphology and motion, demonstrating great potential as promising alternatives to current wearable electronic devices based on rigid substrates and packages. The mechanisms behind the design and applications of these sensors are numerous, involving profound knowledge about the physical and chemical properties of the sensors and the skin. The corresponding materials are diverse, featuring thin elastic films and unique stretchable structures based on traditional hard or ductile materials. In addition, the fabrication techniques that range from complementary metal-oxide semiconductor (CMOS) fabrication to innovative additive manufacturing have led to various sensor formats. This paper reviews mechanisms, materials, fabrication techniques, and representative applications of flexible and stretchable skin sensors, and provides perspective of future trends of the sensors in improving biomedical sensing, human machine interfacing, and quality of life.

Parallel Nanoshaping of Brittle Semiconductor Nanowires for Strained Electronics

Semiconductor nanowires (SCNWs) provide a unique tunability of electro-optical property than their bulk counterparts (e.g., polycrystalline thin films) due to size effects. Nanoscale straining of SCNWs is desirable to enable new ways to tune the properties of SCNWs, such as electronic transport, band structure, and quantum properties. However, there are two bottlenecks to prevent the real applications of straining engineering of SCNWs: strainability and scalability. Unlike metallic nanowires which are highly flexible and mechanically robust for parallel shaping, SCNWs are brittle in nature and could easily break at strains slightly higher than their elastic limits. In addition, the ability to generate nanoshaping in large scale is limited with the current technologies, such as the straining of nanowires with sophisticated manipulators, nanocombing NWs with U-shaped trenches, or buckling NWs with prestretched elastic substrates, which are incompatible with semiconductor technology. Here we present a top-down fabrication methodology to achieve large scale nanoshaping of SCNWs in parallel with tunable elastic strains. This method utilizes nanosecond pulsed laser to generate shock pressure and conformably deform the SCNWs onto 3D-nanostructured silicon substrates in a scalable and ultrafast manner. A polymer dielectric nanolayer is integrated in the process for cushioning the high strain-rate deformation, suppressing the generation of dislocations or cracks, and providing self-preserving mechanism for elastic strain storage in SCNWs. The elastic strain limits have been studied as functions of laser intensity, dimensions of nanowires, and the geometry of nanomolds. As a result of 3D straining, the inhomogeneous elastic strains in GeNWs result in notable Raman peak shifts and broadening, which bring more tunability of the electrical-optical property in SCNWs than traditional strain engineering. We have achieved the first 3D nanostraining enhanced germanium field-effect transistors from GeNWs. Due to laser shock induced straining effect, a more than 2-fold hole mobility enhancement and a 120% transconductance enhancement are obtained from the fabricated back-gated field effect transistors. The presented nanoshaping of SCNWs provide new ways to manipulate nanomaterials with tunable electrical-optical properties and open up many opportunities for nanoelectronics, the nanoelectrical-mechanical system, and quantum devices.

Finite-temperature buckling of an extensible rod

Thermal fluctuations can play an important role in the buckling of elastic objects at small scales, such as polymers or nanotubes. In this paper, we study the finite-temperature buckling transition of an extensible rod by analyzing fluctuation corrections to the elasticity of the rod. We find that, in both two and three dimensions, thermal fluctuations delay the buckling transition, and near the transition, there is a critical regime in which fluctuations are prominent and make a contribution to the effective force that is of order √T. We verify our theoretical prediction of the phase diagram with Monte Carlo simulations.

Free-Standing Kinked Silicon Nanowires for Probing Inter- and Intracellular Force Dynamics

Silicon nanowires (SiNWs) have emerged as a new class of materials with important applications in biology and medicine with current efforts having focused primarily on using substrate bound SiNW devices. However, developing devices capable of free-standing inter- and intracellular operation is an important next step in designing new synthetic cellular materials and tools for biophysical characterization. To demonstrate this, here we show that label free SiNWs can be internalized in multiple cell lines, forming robust cytoskeletal interfaces, and when kinked can serve as free-standing inter- and intracellular force probes capable of continuous extended (>1 h) force monitoring. Our results show that intercellular interactions exhibit ratcheting like behavior with force peaks of ∼69.6 pN/SiNW, while intracellular force peaks of ∼116.9 pN/SiNW were recorded during smooth muscle contraction. To accomplish this, we have introduced a simple single-capture dark-field/phase contrast optical imaging modality, scatter enhanced phase contrast (SEPC), which enables the simultaneous visualization of both cellular components and inorganic nanostructures. This approach demonstrates that rationally designed devices capable of substrate-independent operation are achievable, providing a simple and scalable method for continuous inter- and intracellular force dynamics studies.

Nanomaterial-enabled stretchable conductors: strategies, materials and devices

Stretchable electronics are attracting intensive attention due to their promising applications in many areas where electronic devices undergo large deformation and/or form intimate contact with curvilinear surfaces. On the other hand, a plethora of nanomaterials with outstanding properties have emerged over the past decades. The understanding of nanoscale phenomena, materials, and devices has progressed to a point where substantial strides in nanomaterial-enabled applications become realistic. This review summarizes recent advances in one such application, nanomaterial-enabled stretchable conductors (one of the most important components for stretchable electronics) and related stretchable devices (e.g., capacitive sensors, supercapacitors and electroactive polymer actuators), over the past five years. Focusing on bottom-up synthesized carbon nanomaterials (e.g., carbon nanotubes and graphene) and metal nanomaterials (e.g., metal nanowires and nanoparticles), this review provides fundamental insights into the strategies for developing nanomaterial-enabled highly conductive and stretchable conductors. Finally, some of the challenges and important directions in the area of nanomaterial-enabled stretchable conductors and devices are discussed.

Three-dimensionally deformable, highly stretchable, permeable, durable and washable fabric circuit boards

This paper reports fabric circuit boards (FCBs), a new type of circuit boards, that are three-dimensionally deformable, highly stretchable, durable and washable ideally for wearable electronic applications. Fabricated by using computerized knitting technologies at ambient dry conditions, the resultant knitted FCBs exhibit outstanding electrical stability with less than 1% relative resistance change up to 300% strain in unidirectional tensile test or 150% membrane strain in three-dimensional ball punch test, extraordinary fatigue life of more than 1 000 000 loading cycles at 20% maximum strain, and satisfactory washing capability up to 30 times. To the best of our knowledge, the performance of new FCBs has far exceeded those of previously reported metal-coated elastomeric films or other organic materials in terms of changes in electrical resistance, stretchability, fatigue life and washing capability as well as permeability. Theoretical analysis and numerical simulation illustrate that the structural conversion of knitted fabrics is attributed to the effective mitigation of strain in the conductive metal fibres, hence the outstanding mechanical and electrical properties. Those distinctive features make the FCBs particularly suitable for next-to-skin electronic devices. This paper has further demonstrated the application potential of the knitted FCBs in smart protective apparel for in situ measurement during ballistic impact.

Fiber-based wearable electronics: a review of materials, fabrication, devices, and applications

Fiber-based structures are highly desirable for wearable electronics that are expected to be light-weight, long-lasting, flexible, and conformable. Many fibrous structures have been manufactured by well-established lost-effective textile processing technologies, normally at ambient conditions. The advancement of nanotechnology has made it feasible to build electronic devices directly on the surface or inside of single fibers, which have typical thickness of several to tens microns. However, imparting electronic functions to porous, highly deformable and three-dimensional fiber assemblies and maintaining them during wear represent great challenges from both views of fundamental understanding and practical implementation. This article attempts to critically review the current state-of-arts with respect to materials, fabrication techniques, and structural design of devices as well as applications of the fiber-based wearable electronic products. In addition, this review elaborates the performance requirements of the fiber-based wearable electronic products, especially regarding the correlation among materials, fiber/textile structures and electronic as well as mechanical functionalities of fiber-based electronic devices. Finally, discussions will be presented regarding to limitations of current materials, fabrication techniques, devices concerning manufacturability and performance as well as scientific understanding that must be improved prior to their wide adoption.

Assembly and densification of nanowire arrays via shrinkage

Chemically synthesized semiconductor nanowires (NWs) have demonstrated substantial promise for nanoelectronics, nanoenergy, and nanobiotechnology, but the lack of an effective and controllable assembly process has limited the wide adoption of NWs in these areas. Here we demonstrate a facile, robust, and controllable approach to assembling and densifying a parallel array of NWs using shrinkable shape memory polymers. Using thermal-induced shrinkage of polystyrene, we were able to successfully assemble and densify NW arrays up to close-packing and, furthermore, achieve tunable density (up to ∼300% amplification of density) by controlling the shrinkage process. We also demonstrate scalable assembly and densification of NWs on a 2.5 × 6 inch scale to explore the manufacturability of the shrink-induced assembly process. Finally, we demonstrate the successful transfer of the shrink-assembled NW arrays onto various 2-dimensional and 3-dimensional substrates without compromising the integrity of NW assembly and density.

Non-wrinkled, highly stretchable piezoelectric devices by electrohydrodynamic direct-writing

Piezoelectric structures, in forms that allow mere in-surface deformations under large strains, are attractive for bio-integrated systems. Here, mechano-electrospinning (MES) is presented to direct-write straight nanofibers of polyvinylidene fluoride onto a prestrained poly(dimethylsiloxane) (PDMS) substrate, to position and polarize a piezoelectric nanofiber array in one-step. Wrinkled/non-wrinkled buckling modes are found when the substrates are released, and the morphology of the direct-written fiber proved the key to determine the buckling modes, which can be tuned precisely by MES parameters. The non-wrinkled, stretchable piezoelectric devices with a highly synchronized serpentine fiber array exhibit their in-surface deformation and stable piezoelectric performance up the failure strain of PDMS (∼110% in our study), which may be used as stretchable sensors and energy converters/providers.

Development of a quartz tuning-fork-based force sensor for measurements in the tens of nanoNewton force range during nanomanipulation experiments

Understanding the mechanical properties of nanoscale systems requires new experimental and theoretical tools. In particular, force sensors compatible with nanomechanical testing experiments and with sensitivity in the nN range are required. Here, we report the development and testing of a tuning-fork-based force sensor for in situ nanomanipulation experiments inside a scanning electron microscope. The sensor uses a very simple design for the electronics and it allows the direct and quantitative force measurement in the 1-100 nN force range. The sensor response is initially calibrated against a nN range force standard, as, for example, a calibrated Atomic Force Microscopy cantilever; subsequently, applied force values can be directly derived using only the electric signals generated by the tuning fork. Using a homemade nanomanipulator, the quantitative force sensor has been used to analyze the mechanical deformation of multi-walled carbon nanotube bundles, where we analyzed forces in the 5-40 nN range, measured with an error bar of a few nN.

Strain effects in a single ZnO microwire with wavy configurations

We investigate strain-induced optical modulation in a ZnO microwire with wavy geometries induced by mechanical strains. Curved sections of the wavy ZnO microwire show red-/blue-shifts of near-band-edge emission and broadening of full width at half maximum in cathodoluminescence spectra along the length of the wavy ZnO microwire, compared with straight sections. The observed variations indicate that local strains in the wavy ZnO microwire lead to strain-dependent local changes of its energy band structure. The local bending curvature calculations using a geometric model also provide correlation between the shift of the near-band-edge emission peaks and the bending strain.

Strain-induced large exciton energy shifts in buckled CdS nanowires

Strain engineering can be utilized to tune the fundamental properties of semiconductor materials for applications in advanced electronic and photonic devices. Recently, the effects of large strain on the properties of nanostructures are being intensely investigated to further expand our insights into the physics and applications of such materials. In this Letter, we present results on controllable buckled cadmium-sulfide (CdS) optical nanowires (NWs), which show extremely large energy bandgap tuning by >250 meV with applied strains within the elastic deformation limit. Polarization and spatially resolved optical measurements reveal characteristics related to both compressive and tensile regimes, while microreflectance spectroscopy clearly demonstrates the effect of strain on the different types of excitons in CdS. Our results may enable strained NWs-based optoelectronic devices with tunable optical responses.

Fabrication of functional nanowire devices on unconventional substrates using strain-release assembly

We report three representative nanowire (NW) devices for applications in stretchable electronics, strain sensing, and optical sensing. Fabrication of such devices is based on a recently developed strain-release assembly method. NWs are first aligned transversely on an elastomeric substrate using the strain-release assembly. Constant resistance is achieved in silicon (Si) NW devices stretched up to ~40% of axial strain, highlighting a new concept of transverse buckling. Combining the NW assembly with transfer printing extends suitable device substrates beyond elastomers to other unconventional materials (e.g., flexible and transparent materials). Following this combined process, flexible SiNW strain sensors are fabricated on plastics capable of sensing up to 1.6% bending strain and gauge factors >1000; flexible zinc oxide NW ultraviolet sensors are demonstrated with quick recovery (~2 s) and excellent repeatability on plastics. Our results show promise for the strain-release assembly as a simple and cost-effective process to fabricate NW devices on unconventional substrates.

Reversible modulation of spontaneous emission by strain in silicon nanowires

We computationally study the effect of uniaxial strain in modulating the spontaneous emission of photons in silicon nanowires. Our main finding is that a one to two orders of magnitude change in spontaneous emission time occurs due to two distinct mechanisms: (A) Change in wave function symmetry, where within the direct bandgap regime, strain changes the symmetry of wave functions, which in turn leads to a large change of optical dipole matrix element. (B) Direct to indirect bandgap transition which makes the spontaneous photon emission to be of a slow second order process mediated by phonons. This feature uniquely occurs in silicon nanowires while in bulk silicon there is no change of optical properties under any reasonable amount of strain. These results promise new applications of silicon nanowires as optoelectronic devices including a mechanism for lasing. Our results are verifiable using existing experimental techniques of applying strain to nanowires.

Three-Dimensional Writing of Highly Stretchable Organic Nanowires

Three-dimensional (3D) writing is a promising approach to realize stretchable electronics, but is so far limited to microscale features. We developed accurate 3D writing for highly stretchable organic nanowire arrays using a nanoscale polymer meniscus. Specifically, 3D nanoarches of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) with unprecedented stretchability, over 270%, and no compromise on the electrical characteristics were fabricated. Then, we integrated nanoarches into photoswitches, electrochemical transistors, and electrical interconnects. The impact of these successful tests goes well beyond these specific devices and opens the way to new classes of stretchable nanodevices based on organic materials.

Buckling of aligned carbon nanotubes as stretchable conductors: a new manufacturing strategy

A new manufacturing strategy for buckling of aligned carbon nanotubes is developed, which does not involve prestretching the substrate but relies on the interface interaction between the nanotubes and the substrate. More specifically, upon stretching the substrate the nanotubes slide on the substrate, but upon releasing the nanotubes buckle. Following this manufacturing strategy, stretchable conductors based on aligned carbon nanotubes are demonstrated.

Static friction between silicon nanowires and elastomeric substrates

This paper reports the first direct measurements of static friction force and interfacial shear strength between silicon (Si) nanowires (NWs) and poly(dimethylsiloxane) (PDMS). A micromanipulator is used to manipulate and deform the NWs under a high-magnification optical microscope in real time. The static friction force is measured based on "the most-bent state" of the NWs. The static friction and interface shear strength are found to depend on the ultraviolet/ozone (UVO) treatment of PDMS. The shear strength starts at 0.30 MPa without UVO treatment, increases rapidly up to 10.57 MPa at 60 min of treatment and decreases for longer treatment. Water contact angle measurements suggest that the UVO-induced hydrophobic-to-hydrophilic conversion of PDMS surface is responsible for the increase in the static friction, while the hydrophobic recovery effect contributes to the decrease. The static friction between NWs and PDMS is of critical relevance to many device applications of NWs including NW-based flexible/stretchable electronics, NW assembly and nanocomposites (e.g., supercapacitors). Our results will enable quantitative interface design and control for such applications.

Super-elastic graphene ripples for flexible strain sensors

In this study, we report a buckling approach for graphene and graphene ribbons on stretchable elastomeric substrates. Stretched polydimethylsiloxane (PDMS) films with different prestrains were used to receive the transferred graphene, and nanoscale periodical buckling of graphene was spontaneously formed after strain release. The morphology and periodicity of the as-formed graphene ripples are dependent strongly on their original shapes and substrates' prestrains. Regular periodicity of the ripples preferred to form for narrow graphene ribbons, and both the amplitude and periodicity are reduced with the increase of prestrain on PDMS. The graphene ripples have the ability to afford large strain deformation, thus making it ideal for flexible electronic applications. It was demonstrated that both graphene ribbon and nanographene film ripples could be used for strain sensors, and their resistance changes upon different strains were studied. This simple and controllable process of buckled graphene provides a feasible fabrication for graphene flexible electronic devices and strain sensors due to its novel mechanical and electrical properties.

Strain-release assembly of nanowires on stretchable substrates

A simple yet effective method for assembly of highly aligned nanowires (NWs) on stretchable substrates is reported. In this method, NWs were first transferred to a strained stretchable substrate. After the strain was released, the NWs aligned in the transverse direction and the area coverage of the NWs on the substrate increased. This method can be applied to any NWs deposited on a stretchable film and can be repeated multiple times to increase the alignment and density of the NWs. For silver (Ag) and silicon (Si) NWs on poly(dimethylsiloxane) (PDMS) substrates, the probability of NW alignment increased from 29% to 90% for Ag NWs, and from 25% to 88% for Si NWs after two assembly steps; the density increased by 60% and 75% for the Ag and Si NWs, respectively. The large-strain elasticity of the substrate and the static friction between the NWs and the substrate play key roles in this assembly method. We find that a model that takes into account the volume incompressibility of PDMS reliably predicts the degree of NW alignment and NW density. The utility of this assembly method was demonstrated by fabricating a strain sensor array composed of aligned Si NWs on a PDMS substrate, with a device yield of 95%.

Controlled 3D buckling of silicon nanowires for stretchable electronics

Silicon (Si) nanowire (NW) coils were fabricated on elastomeric substrates by a controlled buckling process. Si NWs were first transferred onto prestrained and ultraviolet/ozone (UVO)-treated poly(dimethylsiloxane) (PDMS) substrates and buckled upon release of the prestrain. Two buckling modes (the in-plane wavy mode and the three-dimensional coiled mode) were found; a transition between them was achieved by controlling the UVO treatment of PDMS. Structural characterization revealed that the NW coils were oval-shaped. The oval-shaped NW coils exhibited very large stretchability up to the failure strain of PDMS (∼104% in our study). Such a large stretchability relies on the effectiveness of the coil shape in mitigating the maximum local strain, with a mechanics that is similar to the motion of a coil spring. Single NW devices based on coiled NWs were demonstrated with a nearly constant electrical response in a large strain range. In addition to the wavy shape, the coil shape represents an effective architecture in accommodating large tension, compression, bending, and twist, which may find important applications for stretchable electronics and other stretchable technologies.