1
|
Wang B, Yang S, Wang Y, Ahsan R, He X, Kim Y, Htoon H, Kapadia R, John DD, Thibeault B, Doorn SK, Cronin SB. Auger Suppression of Incandescence in Individual Suspended Carbon Nanotube pn-Junctions. ACS APPLIED MATERIALS & INTERFACES 2020; 12:11907-11912. [PMID: 32083460 DOI: 10.1021/acsami.9b17519] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
There are various mechanisms of light emission in carbon nanotubes (CNTs), which give rise to a wide range of spectral characteristics that provide important information. Here we report suppression of incandescence via Auger recombination in suspended carbon nanotube pn-junctions generated from dual-gate CNT field-effect transistor (FET) devices. By applying equal and opposite voltages to the gate electrodes (i.e., Vg1 = -Vg2), we create a pn-junction within the CNT. Under these gating conditions, we observe a sharp peak in the incandescence intensity around zero applied gate voltage, where the intrinsic region has the largest spatial extent. Here, the emission occurs under high electrical power densities of around 0.1 MW/cm2 (or 6 μW) and arises from thermal emission at elevated temperatures above 800 K (i.e., incandescence). It is somewhat surprising that this thermal emission intensity is so sensitive to the gating conditions, and we observe a 1000-fold suppression of light emission between Vg1 = 0 and 15 V, over a range in which the electrical power dissipated in the nanotube is roughly constant. This behavior is understood on the basis of Auger recombination, which suppresses light emission by the excitation of free carriers. Based on the calculated carrier density and band profiles, the length of the intrinsic region drops by a factor of 7-25× over the range from |Vg| = 0 to 15 V. We, therefore, conclude that the light emission intensity is significantly dependent on the free carrier density profile and the size of the intrinsic region in these CNT devices.
Collapse
Affiliation(s)
| | | | | | | | - Xiaowei He
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Younghee Kim
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | | | - Demis D John
- Nanotech, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States
| | - Brian Thibeault
- Nanotech, Department of Electrical and Computer Engineering, University of California Santa Barbara, Santa Barbara, California 93106, United States
| | - Stephen K Doorn
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | | |
Collapse
|
2
|
Chen M, Li W, Kumar A, Li G, Itkis ME, Wong BM, Bekyarova E. Covalent Atomic Bridges Enable Unidirectional Enhancement of Electronic Transport in Aligned Carbon Nanotubes. ACS APPLIED MATERIALS & INTERFACES 2019; 11:19315-19323. [PMID: 31083961 DOI: 10.1021/acsami.9b01400] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Interconnecting the surfaces of nanomaterials without compromising their outstanding mechanical, thermal, and electronic properties is critical in the design of advanced bulk structures that still preserve the novel properties of their nanoscale constituents. As such, bridging the π-conjugated carbon surfaces of single-walled carbon nanotubes (SWNTs) has special implications in next-generation electronics. This study presents a rational path toward the improvement of the electrical transport in aligned semiconducting SWNT films by deposition of metal atoms. The formation of conducting Cr-mediated pathways between the parallel SWNTs increases the transverse (intertube) conductance while having a negligible effect on the parallel (intratube) transport. In contrast, doping with Li has a predominant effect on the intratube electrical transport of aligned SWNT films. Large-scale first-principles calculations of electrical transport on aligned SWNTs show good agreement with the experimental electrical measurements and provide insight into the changes that different metal atoms exert on the density of states near the Fermi level of the SWNTs and the formation of transport channels.
Collapse
|
3
|
Gu T, Tao J, Zhu W, Mack J, Soy RC, Nyokong T, Xu H, Li M, Liang X. Co( ii)Tetraphenyltetraphenanthroporphyrin@MWCNTs: enhanced π–π interaction for robust electrochemical catalysis. NEW J CHEM 2019. [DOI: 10.1039/c9nj01707k] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/12/2023]
Abstract
A cobalt(ii)tetraphenyltetraphenanthroporphyrin with phenanthrene-fused pyrrole rings was applied for robust HER and ORR.
Collapse
Affiliation(s)
- Tingting Gu
- School of Chemistry and Chemical Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Jiayu Tao
- College of Chemical Engineering
- Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals
- Nanjing Forestry University
- Nanjing 210037
- P. R. China
| | - Weihua Zhu
- School of Chemistry and Chemical Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
- State Key Laboratory of Coordination Chemistry
| | - John Mack
- Centre for Nanotechnology Innovation
- Department of Chemistry
- Rhodes University
- Makhanda 6140
- South Africa
| | - Rodah C. Soy
- Centre for Nanotechnology Innovation
- Department of Chemistry
- Rhodes University
- Makhanda 6140
- South Africa
| | - Tebello Nyokong
- Centre for Nanotechnology Innovation
- Department of Chemistry
- Rhodes University
- Makhanda 6140
- South Africa
| | - Haijun Xu
- College of Chemical Engineering
- Jiangsu Key Lab of Biomass-based Green Fuels and Chemicals
- Nanjing Forestry University
- Nanjing 210037
- P. R. China
| | - Minzhi Li
- School of Chemistry and Chemical Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
| | - Xu Liang
- School of Chemistry and Chemical Engineering
- Jiangsu University
- Zhenjiang 212013
- P. R. China
- State Key Laboratory of Coordination Chemistry
| |
Collapse
|
4
|
Jeantet A, Chassagneux Y, Claude T, Lauret JS, Voisin C. Interplay of spectral diffusion and phonon-broadening in individual photo-emitters: the case of carbon nanotubes. NANOSCALE 2018; 10:683-689. [PMID: 29242889 DOI: 10.1039/c7nr05861f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
At cryogenic temperatures, the photoluminescence (PL) spectrum of nano-emitters may still be significantly broadened due to interactions with the environment. The interplay of spectral diffusion (SD) and phonon broadening in this context is still a debated issue. Singlewall carbon nanotubes (SWNTs) are a particularly relevant system to address this topic as they show intense spectral diffusion and undergo a high exciton-phonon coupling due to their one-dimensional geometry. Here, we investigate the correlations between the spectral diffusion of the main line and that of the wings in SWNTs quantitatively and demonstrate that the photoluminescence spectrum undergoes spectral jumps as a whole, without distortions. This behavior suggests that the spectral shape of SWNT PL is defined by exciton-phonon interactions and that spectral diffusion results in an additional flat broadening. The methodology developed here can be used to investigate a broad range of non-Lorentzian emitters undergoing spectral diffusion.
Collapse
Affiliation(s)
- A Jeantet
- Laboratoire Pierre Aigrain, École Normale Supérieure, PSL, CNRS, Université Pierre et Marie Curie, Sorbonne Université, Université Paris Diderot, Sorbonne Paris Cité, 24, rue Lhomond, F-75005 Paris, France.
| | | | | | | | | |
Collapse
|
5
|
Bisri SZ, Shimizu S, Nakano M, Iwasa Y. Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1607054. [PMID: 28582588 DOI: 10.1002/adma.201607054] [Citation(s) in RCA: 177] [Impact Index Per Article: 25.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2016] [Revised: 02/16/2017] [Indexed: 05/28/2023]
Abstract
Iontronics is a newly emerging interdisciplinary concept which bridges electronics and ionics, covering electrochemistry, solid-state physics, electronic engineering, and biological sciences. The recent developments of electronic devices are highlighted, based on electric double layers formed at the interface between ionic conductors (but electronically insulators) and various electronic conductors including organics and inorganics (oxides, chalcogenide, and carbon-based materials). Particular attention is devoted to electric-double-layer transistors (EDLTs), which are producing a significant impact, particularly in electrical control of phase transitions, including superconductivity, which has been difficult or impossible in conventional all-solid-state electronic devices. Besides that, the current state of the art and the future challenges of iontronics are also reviewed for many applications, including flexible electronics, healthcare-related devices, and energy harvesting.
Collapse
Affiliation(s)
- Satria Zulkarnaen Bisri
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
| | - Sunao Shimizu
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
| | - Masaki Nakano
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Yoshihiro Iwasa
- RIKEN Center for Emergent Matter Science (CEMS), 2-1 Hirosawa, Wako-shi, Saitama, 351-0198, Japan
- Quantum Phase Electronic Center (QPEC) and Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| |
Collapse
|
6
|
Derenskyi V, Gomulya W, Talsma W, Salazar-Rios JM, Fritsch M, Nirmalraj P, Riel H, Allard S, Scherf U, Loi MA. On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1606757. [PMID: 28378326 DOI: 10.1002/adma.201606757] [Citation(s) in RCA: 12] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2016] [Revised: 02/21/2017] [Indexed: 06/07/2023]
Abstract
In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm2 V-1 s-1 ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents.
Collapse
Affiliation(s)
- Vladimir Derenskyi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Widianta Gomulya
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Wytse Talsma
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Jorge Mario Salazar-Rios
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| | - Martin Fritsch
- Chemistry Department and Institute for Polymer Technology, Wuppertal University, Gauss-Str. 20, D-42119, Wuppertal, Germany
| | - Peter Nirmalraj
- IBM Research - Zürich, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
| | - Heike Riel
- IBM Research - Zürich, Säumerstrasse 4, CH-8803, Rüschlikon, Switzerland
| | - Sybille Allard
- Chemistry Department and Institute for Polymer Technology, Wuppertal University, Gauss-Str. 20, D-42119, Wuppertal, Germany
| | - Ullrich Scherf
- Chemistry Department and Institute for Polymer Technology, Wuppertal University, Gauss-Str. 20, D-42119, Wuppertal, Germany
| | - Maria A Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747, AG, The Netherlands
| |
Collapse
|
7
|
Matsumoto D, Yanagi K, Takenobu T, Okada S, Marumoto K. Electrically induced ambipolar spin vanishments in carbon nanotubes. Sci Rep 2015; 5:11859. [PMID: 26148487 PMCID: PMC4493558 DOI: 10.1038/srep11859] [Citation(s) in RCA: 10] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/18/2015] [Accepted: 06/09/2015] [Indexed: 11/16/2022] Open
Abstract
Carbon nanotubes (CNTs) exhibit various excellent properties, such as ballistic transport. However, their electrically induced charge carriers and the relation between their spin states and the ballistic transport have not yet been microscopically investigated because of experimental difficulties. Here we show an electron spin resonance (ESR) study of semiconducting single-walled CNT thin films to investigate their spin states and electrically induced charge carriers using transistor structures under device operation. The field-induced ESR technique is suitable for microscopic investigation because it can directly observe spins in the CNTs. We observed a clear correlation between the ESR decrease and the current increase under high charge density conditions, which directly demonstrated electrically induced ambipolar spin vanishments in the CNTs. The result provides a first clear evidence of antimagnetic interactions between spins of electrically induced charge carriers and vacancies in the CNTs. The ambipolar spin vanishments would contribute the improvement of transport properties of CNTs because of greatly reduced carrier scatterings.
Collapse
Affiliation(s)
- D Matsumoto
- Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
| | - K Yanagi
- Department of Physics, Tokyo Metropolitan University, Hachioji, Tokyo 192-0397, Japan
| | - T Takenobu
- Department of Applied Physics, Waseda University, Tokyo 169-8555, Japan
| | - S Okada
- Division of Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan
| | - K Marumoto
- 1] Division of Materials Science, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan [2] Japan Science and Technology Agency (JST), PRESTO, Kawaguchi, Saitama 322-0012, Japan [3] Tsukuba Research Center for Interdisciplinary Materials Science (TIMS), University of Tsukuba, Tsukuba, Ibaraki 305-8571, Japan
| |
Collapse
|
8
|
Schernich S, Wagner V, Taccardi N, Wasserscheid P, Laurin M, Libuda J. Interface controls spontaneous crystallization in thin films of the ionic liquid [C₂C₁Im][OTf] on atomically clean Pd(111). LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2014; 30:6846-6851. [PMID: 24853236 DOI: 10.1021/la500842c] [Citation(s) in RCA: 8] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A total of 5-30 monolayer thick films of the ionic liquid (IL) [C2C1Im][OTf] were vaporized in vacuo onto an atomically clean Pd(111) single crystal surface at 220 K. Time- and temperature-resolved infrared reflection-absorption spectroscopy reveals growth, interactions with the metallic support, and the macroscopic phase behavior of the layer. At 220 K, the IL layer first grows in the form of a glassy phase. Crystallization of the IL was witnessed above a critical thickness of about 10 monolayers. On the basis of the known bulk crystal structure of the IL, we suggest the formation of well-oriented checkerboard-like crystalline film structures on the surface. The preferential orientation manifested by the crystal phase with regard to the macroscopic metallic surface is attributed to strong interactions between anionic headgroups and the metal.
Collapse
Affiliation(s)
- Stefan Schernich
- Lehrstuhl für Physikalische Chemie II, ‡Lehrstuhl für Chemische Reaktionstechnik, and §Erlangen Catalysis Resource Center, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU) , Egerlandstraße 3, 91058 Erlangen, Germany
| | | | | | | | | | | |
Collapse
|
9
|
Yu D, Wang S, Ye L, Li W, Zhang Z, Chen Y, Zhang J, Peng LM. Electroluminescence from serpentine carbon nanotube based light-emitting diodes on quartz. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2014; 10:1050-1056. [PMID: 24800263 DOI: 10.1002/smll.201302287] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
A light-emitting diode is fabricated and characterized on a semiconducting serpentine CNT which has many parallel segments with identical chirality. Compared with the individual CNT and CNT-film devices, the device with parallel segments shows improvement of an order of magnitude in current, significantly larger electroluminescent intensity, and narrower emission bands. Serpentine nanotubes are an ideal choice for practical applications of CNT-based light sources.
Collapse
|
10
|
Bisri SZ, Piliego C, Gao J, Loi MA. Outlook and emerging semiconducting materials for ambipolar transistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2014; 26:1176-99. [PMID: 24591008 DOI: 10.1002/adma.201304280] [Citation(s) in RCA: 102] [Impact Index Per Article: 10.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/26/2013] [Indexed: 05/12/2023]
Abstract
Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection.
Collapse
Affiliation(s)
- Satria Zulkarnaen Bisri
- Photophysics and Optoelectronics Group, Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, Groningen, 9747 AG, The Netherlands
| | | | | | | |
Collapse
|
11
|
Schernich S, Laurin M, Lykhach Y, Tsud N, Sobota M, Skála T, Prince KC, Taccardi N, Wagner V, Steinrück HP, Matolín V, Wasserscheid P, Libuda J. Interactions of Imidazolium-Based Ionic Liquids with Oxide Surfaces Controlled by Alkyl Chain Functionalization. Chemphyschem 2013; 14:3673-7. [PMID: 24123498 DOI: 10.1002/cphc.201300792] [Citation(s) in RCA: 20] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/27/2013] [Indexed: 11/09/2022]
|
12
|
Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Carbon nanomaterials for electronics, optoelectronics, photovoltaics, and sensing. Chem Soc Rev 2013; 42:2824-60. [PMID: 23124307 DOI: 10.1039/c2cs35335k] [Citation(s) in RCA: 571] [Impact Index Per Article: 51.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/25/2022]
Abstract
In the last three decades, zero-dimensional, one-dimensional, and two-dimensional carbon nanomaterials (i.e., fullerenes, carbon nanotubes, and graphene, respectively) have attracted significant attention from the scientific community due to their unique electronic, optical, thermal, mechanical, and chemical properties. While early work showed that these properties could enable high performance in selected applications, issues surrounding structural inhomogeneity and imprecise assembly have impeded robust and reliable implementation of carbon nanomaterials in widespread technologies. However, with recent advances in synthesis, sorting, and assembly techniques, carbon nanomaterials are experiencing renewed interest as the basis of numerous scalable technologies. Here, we present an extensive review of carbon nanomaterials in electronic, optoelectronic, photovoltaic, and sensing devices with a particular focus on the latest examples based on the highest purity samples. Specific attention is devoted to each class of carbon nanomaterial, thereby allowing comparative analysis of the suitability of fullerenes, carbon nanotubes, and graphene for each application area. In this manner, this article will provide guidance to future application developers and also articulate the remaining research challenges confronting this field.
Collapse
Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | | | | | | | | |
Collapse
|
13
|
Jakubka F, Backes C, Gannott F, Mundloch U, Hauke F, Hirsch A, Zaumseil J. Mapping charge transport by electroluminescence in chirality-selected carbon nanotube networks. ACS NANO 2013; 7:7428-35. [PMID: 23915032 DOI: 10.1021/nn403419d] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2023]
Abstract
We demonstrate random network single-walled carbon nanotube (SWNT) field-effect transistors (FETs) in bottom contact/top gate geometry with only five different semiconducting nanotube species that were selected by dispersion with poly(9,9-dioctylfluorene) in toluene. These FETs are highly ambipolar with balanced hole and electron mobilities and emit near-infrared light with narrow peak widths (<40 meV) and good efficiency. We spatially resolve the electroluminescence from the channel region during a gate voltage sweep and can thus trace charge transport paths through the SWNT thin film. A shift of emission intensity to large diameter nanotubes and gate-voltage-dependent photoluminescence quenching of the different nanotube species indicates excitation transfer within the network and preferential charge accumulation on small band gap nanotubes. Apart from applications as near-infrared emitters with selectable emission wavelengths and narrow line widths, these devices will help to understand and model charge transport in realistic carbon nanotube networks.
Collapse
Affiliation(s)
- Florian Jakubka
- Institute of Polymer Materials, Friedrich-Alexander-Universität Erlangen-Nürnberg, 91058 Erlangen, Germany
| | | | | | | | | | | | | |
Collapse
|
14
|
Lokteva I, Thiemann S, Gannott F, Zaumseil J. Ambipolar, low-voltage and low-hysteresis PbSe nanowire field-effect transistors by electrolyte gating. NANOSCALE 2013; 5:4230-4235. [PMID: 23545580 DOI: 10.1039/c3nr33723e] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/02/2023]
Abstract
Semiconductor nanowire field-effect transistors (FETs) are interesting for fundamental studies of charge transport as well as possible applications in electronics. Here, we report low-voltage, low-hysteresis and ambipolar PbSe nanowire FETs using electrolyte-gating with ionic liquids and ion gels. We obtain balanced hole and electron mobilities at gate voltages below 1 V. Due to the large effective capacitance of the ionic liquids and thus high charge carrier densities electrolyte-gated nanowire FETs are much less affected by external doping and traps than nanowire FETs with traditional dielectrics such as SiO2. The observed current-voltage characteristics and on/off ratios indicate almost completely transparent Schottky barriers and efficient ambipolar charge injection into a low band gap one-dimensional semiconductor. Finally, we explore the possibility of applying these ambipolar nanowire FETs in complementary inverters for printed electronics.
Collapse
Affiliation(s)
- Irina Lokteva
- Institute of Polymer Materials, Friedrich-Alexander Universität Erlangen-Nürnberg, Martensstraße 7, D-91058 Erlangen, Germany
| | | | | | | |
Collapse
|
15
|
Kim SH, Hong K, Xie W, Lee KH, Zhang S, Lodge TP, Frisbie CD. Electrolyte-gated transistors for organic and printed electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2013; 25:1822-1846. [PMID: 23203564 DOI: 10.1002/adma.201202790] [Citation(s) in RCA: 339] [Impact Index Per Article: 30.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/10/2012] [Indexed: 05/21/2023]
Abstract
Here we summarize recent progress in the development of electrolyte-gated transistors (EGTs) for organic and printed electronics. EGTs employ a high capacitance electrolyte as the gate insulator; the high capacitance increases drive current, lowers operating voltages, and enables new transistor architectures. Although the use of electrolytes in electronics is an old concept going back to the early days of the silicon transistor, new printable, fast-response polymer electrolytes are expanding the potential applications of EGTs in flexible, printed digital circuits, rollable displays, and conformal bioelectronic sensors. This report introduces the structure and operation mechanisms of EGTs and reviews key developments in electrolyte materials for use in printed electronics. The bulk of the article is devoted to electrical characterization of EGTs and emerging applications.
Collapse
Affiliation(s)
- Se Hyun Kim
- Department of Chemical Engineering & Materials Science, University of Minnesota, 421 Washington Ave. SE, Minneapolis, MN 55455, USA
| | | | | | | | | | | | | |
Collapse
|
16
|
Schernich S, Laurin M, Lykhach Y, Steinrück HP, Tsud N, Skála T, Prince KC, Taccardi N, Matolín V, Wasserscheid P, Libuda J. Functionalization of Oxide Surfaces through Reaction with 1,3-Dialkylimidazolium Ionic Liquids. J Phys Chem Lett 2013; 4:30-35. [PMID: 26291207 DOI: 10.1021/jz301856a] [Citation(s) in RCA: 24] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
Practical applications of ionic liquids (ILs) often involve IL/oxide interfaces, but little is known regarding their interfacial chemistry. The unusual physicochemical properties of ILs, including their exceptionally low vapor pressure, provide access to such interfaces using a surface science approach in ultrahigh vacuum (UHV). We have applied synchrotron radiation photoelectron spectroscopy (SR-PES) to the study of a thin film of the ionic liquid [C6C1Im][Tf2N] prepared in situ in UHV on ordered stoichiometric CeO2(111) and partially reduced CeO2-x. On the partially reduced surface, we mostly observe decomposition of the anion. On the stoichiometric CeO2(111) surface, however, a layer of surface-anchored organic products with high thermal stability is formed upon reaction of the cation. The suggested acid-base reaction pathway may provide well-defined functionalized IL/solid interfaces on basic oxides.
Collapse
Affiliation(s)
| | | | | | | | - Nataliya Tsud
- ‡Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic
| | - Tomáš Skála
- ‡Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic
| | - Kevin C Prince
- §Sincrotrone Trieste SCpA, Strada Statale 14, km163.5,34149 Basovizza-Trieste, Italy
| | | | - Vladimír Matolín
- ‡Faculty of Mathematics and Physics, Department of Surface and Plasma Science, Charles University, V Holešovičkách 2, 18000 Prague 8, Czech Republic
| | | | | |
Collapse
|
17
|
Xie X, Islam AE, Wahab MA, Ye L, Ho X, Alam MA, Rogers JA. Electroluminescence in aligned arrays of single-wall carbon nanotubes with asymmetric contacts. ACS NANO 2012; 6:7981-7988. [PMID: 22866943 DOI: 10.1021/nn3025496] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/01/2023]
Abstract
High quantum efficiencies and low current thresholds are important properties for all classes of semiconductor light emitting devices (LEDs), including nanoscale emitters based on single wall carbon nanotubes (SWNTs). Among the various configurations that can be considered in SWNT LEDs, two terminal geometries with asymmetric metal contacts offer the simplest solution. In this paper, we study, experimentally and theoretically, the mechanisms of electroluminescence in devices that adopt this design and incorporate perfectly aligned, horizontal arrays of individual SWNTs. The results suggest that exciton mediated electron-hole recombination near the lower work-function contact is the dominant source of photon emission. High current thresholds for electroluminescence in these devices result from diffusion and quenching of excitons near the metal contact.
Collapse
Affiliation(s)
- Xu Xie
- Department of Materials Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801, United States
| | | | | | | | | | | | | |
Collapse
|
18
|
|
19
|
Wang S, Zeng Q, Yang L, Zhang Z, Wang Z, Pei T, Ding L, Liang X, Gao M, Li Y, Peng LM. High-performance carbon nanotube light-emitting diodes with asymmetric contacts. NANO LETTERS 2011; 11:23-29. [PMID: 21117697 DOI: 10.1021/nl101513z] [Citation(s) in RCA: 41] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2023]
Abstract
Electroluminescence (EL) measurements are carried out on a two-terminal carbon nanotube (CNT) based light-emitting diode (LED). This two-terminal device is composed of an asymmetrically contacted semiconducting single-walled carbon nanotube (SWCNT). On the one end the SWCNT is contacted with Sc and on the other end with Pd. At large forward bias, with the Sc contact being grounded, electrons can be injected barrier-free into the conduction band of the SWCNT from the Sc contact and holes be injected into the valence band from the Pd electrode. The injected electrons and holes recombine radiatively in the SWCNT channel yielding a narrowly peaked emission peak with a full width at half-maximum of about 30 meV. Detailed EL spectroscopy measurements show that the emission is excitons dominated process, showing little overlap with that associated with the continuum states. The performance of the LED is compared with that based on a three-terminal field-effect transistor (FET) that is fabricated on the same SWCNT. The conversion efficiency of the two-terminal diode is shown to be more than three times higher than that of the FET based device, and the emission peak of the LED is much narrower and operation voltage is lower.
Collapse
Affiliation(s)
- Sheng Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China.
| | | | | | | | | | | | | | | | | | | | | |
Collapse
|
20
|
Kinoshita M, Steiner M, Engel M, Small JP, Green AA, Hersam MC, Krupke R, Mendez EE, Avouris P. The polarized carbon nanotube thin film LED. OPTICS EXPRESS 2010; 18:25738-45. [PMID: 21164919 DOI: 10.1364/oe.18.025738] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/06/2023]
Abstract
We demonstrate a light emitting p-i-n diode made of a highly aligned film of separated (99%) semiconducting carbon nanotubes, self-assembled from solution. By using a split gate technique, we create p- and n-doped regions in the nanotube film that are separated by a micron-wide gap. We inject p- and n-type charge carriers into the device channel from opposite contacts and investigate the radiative recombination using optical micro-spectroscopy. We find that the threshold-less light generation efficiency in the intrinsic carbon nanotube film segment can be enhanced by increasing the potential drop across the junction, demonstrating the LED-principle in a carbon nanotube film for the first time. The device emits infrared light that is polarized along the long axes of the carbon nanotubes that form the aligned film.
Collapse
|
21
|
Xia Y, Xie W, Ruden PP, Frisbie CD. Carrier localization on surfaces of organic semiconductors gated with electrolytes. PHYSICAL REVIEW LETTERS 2010; 105:036802. [PMID: 20867788 DOI: 10.1103/physrevlett.105.036802] [Citation(s) in RCA: 17] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2009] [Revised: 02/16/2010] [Indexed: 05/29/2023]
Abstract
Organic semiconductor single crystals gated with electrolytes exhibit a pronounced maximum in channel conductance at hole densities >10(13) cm(-2). The cause is a strong decrease in the hole mobility with increasing charge density, which is explained in terms of a percolation model that incorporates trapping of holes by ions at the semiconductor-electrolyte interface. In the case of rubrene crystals, the peak channel conductance occurs at hole densities near 3 × 10(13) cm(-2). The magnitude of the effect will be large for semiconductors with low dielectric constants and narrow bandwidths, and thus is likely to be a general phenomenon in organic semiconductors gated with electrolytes.
Collapse
Affiliation(s)
- Yu Xia
- Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis 55455, USA
| | | | | | | |
Collapse
|
22
|
Hong SW, Banks T, Rogers JA. Improved density in aligned arrays of single-walled carbon nanotubes by sequential chemical vapor deposition on quartz. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2010; 22:1826-1830. [PMID: 20512955 DOI: 10.1002/adma.200903238] [Citation(s) in RCA: 33] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2023]
Affiliation(s)
- Suck Won Hong
- Department of Materials Science and Engineering, Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign Urbana, Illinois 61801, USA
| | | | | |
Collapse
|