Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

Predictive Synthesis of Transition Metal Carbide via Thermochemical Oxocarbon Equilibrium

Fabricating nanoscale metal carbides is a great challenge due to them having higher Gibbs free energy of formation (ΔG°) values than other metal compounds; additionally, these carbides have harsh calcination conditions, in which metal oxidation is preferred in the atmosphere. Herein, we report oxocarbon-mediated calcination for the predictive synthesis of nanoscale metal carbides. The thermochemical oxocarbon equilibrium of CO-CO2 reactions was utilized to control the selective redox reactions in multiatomic systems of Mo-C-O, contributing to the phase-forming and structuring of Mo compounds. By harnessing the thermodynamically predicted processing window, we controlled a wide range of Mo phases (MoO2, α-MoC1-x, and β-Mo2C) and nanostructures (nanoparticle, spike, stain, and core/shell) in the Mo compounds/C nanofibers. By inducing simultaneous reactions of C-O (selective C combustion) and Mo-C (Mo carbide formation) in the nanofibers, Mo diffusion was controlled in C nanofibers, acting as a template for the nucleation and growth of Mo carbides and resulting in precise control of the phases and structures of Mo compounds. The formation mechanism of nanostructured Mo carbides was elucidated according to the CO fractions of CO-CO2 calcination. Moreover, tungsten (W) and niobium (Nb) carbides/C nanofibers have been successfully synthesized by CO-CO2 calcination. We constructed the thermodynamic map for the predictive synthesis of transition metal carbides to provide universal guideline via thermochemical oxocarbon equilibrium. We revealed that our thermochemical oxocarbon-mediated gas-solid reaction enabled the structure and phase control of nanoscale transition metal compounds to optimize the material-property relationship accordingly.

Defect healing and doping of CVD graphene by thermal sulfurization

CVD graphene layers are intrinsically polycrystalline; depending on grain size, their structure at the atomic level is scarcely free of defects, which affects the properties of graphene. On the one hand, atomic-scale defects act as scattering centers and lead to a loss of carrier mobility. On the other hand, structural disorder at grain boundaries provides additional resistance in series that affects material conductivity. Graphene chemical functionalization has been demonstrated to be an effective way to improve its conductivity mainly by increasing carrier concentration. The present study reports the healing effects of sulfur doping on the electrical transport properties of single-layer CVD graphene. A post-growth thermal sulfurization process operating at 250 °C is applied on single layers of graphene on Corning-glass and Si/SiO2 substrates. XPS and Raman analyses reveal the covalent attachment of sulfur atoms in graphene carbon lattice without creating new C-sp3 defects. Measurements of transport properties show a significant improvement in hole mobility as revealed by Hall measurements and related material conductivity. Typically, Hall mobility values as high as 2500 cm2 V-1 s-1 and sheet resistance as low as 400 Ohm per square are measured on single-layer sulfurized graphene.

A Cu3BHT-Graphene van der Waals Heterostructure with Strong Interlayer Coupling for Highly Efficient Photoinduced Charge Separation

Two-dimensional van der Waals heterostructures (2D vdWhs) are of significant interest due to their intriguing physical properties critically defined by the constituent monolayers and their interlayer coupling. Synthetic access to 2D vdWhs based on chemically tunable monolayer organic 2D materials remains challenging. Herein, the fabrication of a novel organic-inorganic bilayer vdWh by combining π-conjugated 2D coordination polymer (2DCP, i.e., Cu3BHT, BHT = benzenehexathiol) with graphene is reported. Monolayer Cu3BHT with detectable µm2-scale uniformity and atomic flatness is synthesized using on-water surface chemistry. A combination of diffraction and imaging techniques enables the determination of the crystal structure of monolayer Cu3BHT with atomic precision. Leveraging the strong interlayer coupling, Cu3BHT-graphene vdWh exhibits highly efficient photoinduced interlayer charge separation with a net electron transfer efficiency of up to 34% from Cu3BHT to graphene, superior to those of reported bilayer 2D vdWhs and molecular-graphene vdWhs. This study unveils the potential for developing novel 2DCP-based vdWhs with intriguing physical properties.

Metrology for 2D materials: a perspective review from the international roadmap for devices and systems

The International Roadmap for Devices and Systems (IRDS) predicts the integration of 2D materials into high-volume manufacturing as channel materials within the next decade, primarily in ultra-scaled and low-power devices. While their widespread adoption in advanced chip manufacturing is evolving, the need for diverse characterization methods is clear. This is necessary to assess structural, electrical, compositional, and mechanical properties to control and optimize 2D materials in mass-produced devices. Although the lab-to-fab transition remains nascent and a universal metrology solution is yet to emerge, rapid community progress underscores the potential for significant advancements. This paper reviews current measurement capabilities, identifies gaps in essential metrology for CMOS-compatible 2D materials, and explores fundamental measurement science limitations when applying these techniques in high-volume semiconductor manufacturing.

Extending the lifetime of vanadium redox flow batteries by reactivation of carbon electrode materials

The degradation and aging of carbon felt electrodes is a main reason for the performance loss of Vanadium Redox Flow Batteries over extended operation time. In this study, the chemical mechanisms for carbon electrode degradation are investigated and distinct differences in the degradation mechanisms on positive and negative electrodes have been revealed. A combination of surface analysis techniques such as X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and Electrochemical Impedance Spectroscopy (EIS) was applied for this purpose. In addition to understanding the chemical and physical alterations of the aged electrodes, a thermal method for reactivating aged electrodes was developed. The reactivation process was successfully applied on artificially aged electrodes as well as on electrodes from a real-world industrial vanadium redox flow battery system. The aforementioned analysis methods provided insight and understanding into the chemical mechanisms of the reactivation procedure. By applying the reactivation method, the lifetime of vanadium redox flow batteries can be significantly extended.

Aluminium, Nitrogen-Dual-Doped Reduced Graphene Oxide Co-Existing with Cobalt-Encapsulated Graphitic Carbon Nanotube as an Activity Modulated Electrocatalyst for Oxygen Electrocatalyst for Oxygen Electrochemistry Applications

There is a rising need to create high-performing, affordable electrocatalysts in the new field of oxygen electrochemistry. Here, a cost-effective, activity-modulated electrocatalyst with the capacity to trigger both the oxygen reduction reaction (ORR) and the oxygen evolution reaction (OER) in an alkaline environment is presented. The catalyst (Al, Co/N-rGCNT) is made up of aluminium, nitrogen-dual-doped reduced graphene oxide sheets co-existing with cobalt-encapsulated carbon nanotube units. Based on X-ray Absorption Spectroscopy (XAS) studies, it is established that the superior reaction kinetics in Al, Co/N-rGCNT over their bulk counterparts can be attributed to their electronic regulation. The Al, Co/N-rGCNT performs as a versatile bifunctional electrocatalyst for zinc-air battery (ZAB), delivering an open circuit potential ≈1.35 V and peak power density of 106.3 mW cm-2, which are comparable to the system based on Pt/C. The Al, Co/N-rGCNT-based system showed a specific capacity of 737 mAh gZn -1 compared to 696 mAh gZn -1 delivered by the system based on Pt/C. The DFT calculations indicate that the adsorption of Co in the presence of Al doping in NGr improves the electronic properties favoring ORR. Thus, the Al, Co/N-rGCNT-based rechargeable ZAB (RZAB) emerges as a highly viable and affordable option for the development of RZAB for practical applications.

Molecular dynamics simulations suggest the potential toxicity of fluorinated graphene to HP35 protein via unfolding the α-helix structure

Fluorinated graphene, a two-dimensional nanomaterial composed of three atomic layers, a central carbon layer sandwiched between two layers of fluorine atoms, has attracted considerable attention across various fields, particularly for its potential use in biomedical applications. Nonetheless, scant effort has been devoted to assessing the potential toxicological implications of this nanomaterial. In this study, we scrutinize the potential impact of fluorinated graphene on a protein model, HP35 by utilizing extensive molecular dynamics (MD) simulation methods. Our MD results elucidate that upon adsorption to the nanomaterial, HP35 undergoes a denaturation process initiated by the unraveling of the second helix of the protein and the loss of the proteins hydrophobic core. In detail, substantial alterations in various structural features of HP35 ensue, including alterations in hydrogen bonding, Q value, and RMSD. Subsequent analyses underscore that hydrophobic and van der Waals interactions (predominant), alongside electrostatic energy (subordinate), exert influence over the adsorption of HP35 on the fluorinated graphene surface. Mechanistic scrutiny attests that the unrestrained lateral mobility of HP35 on the fluorinated graphene nanomaterial primarily causes the exposure of HP35's hydrophobic core, resulting in the eventual structural denaturation of HP35. A trend in the features of 2D nanostructures is proposed that may facilitate the denaturation process. Our findings not only substantiate the potential toxicity of fluorinated graphene but also unveil the underlying molecular mechanism, which thereby holds significance for the prospective utilization of such nanomaterials in the field of biomedicine.

Metal-Graphene Hybrid Terahertz Metasurfaces for Circulating Tumor DNA Detection Based on Dual Signal Amplification

Terahertz (THz) spectroscopy has impressive capability for label-free biosensing, but its utility in clinical laboratories is rarely reported due to often unsatisfactory detection performances. Here, we fabricated metal-graphene hybrid THz metasurfaces (MSs) for the sensitive and enzyme-free detection of circulating tumor DNA (ctDNA) in pancreatic cancer plasma samples. The feasibility and mechanism of the enhanced effects of a graphene bridge across the MS and amplified by gold nanoparticles (AuNPs) were investigated experimentally and theoretically. The AuNPs serve to boost charge injection in the graphene film and result in producing a remarkable change in the graded transmissivity index to THz radiation of the MS resonators. Assay design utilizes this feature and a cascade hybridization chain reaction initiated on magnetic beads in the presence of target ctDNA to achieve dual signal amplification (chemical and optical). In addition to demonstrating subfemtomolar detection sensitivity and single-nucleotide mismatch selectivity, the proposed method showed remarkable capability to discriminate between pancreatic cancer patients and healthy individuals by recognizing and quantifying targeted ctDNAs. The introduction of graphene to the metasurface produces an improved sensitivity of 2 orders of magnitude for ctDNA detection. This is the first study to report the combined application of graphene and AuNPs in biosensing by THz spectroscopic resonators and provides a combined identification scheme to detect and discriminate different biological analytes, including nucleic acids, proteins, and various biomarkers.

Anti-Ambipolar Heterojunctions: Materials, Devices, and Circuits

Anti-ambipolar heterojunctions are vital in constructing high-frequency oscillators, fast switches, and multivalued logic (MVL) devices, which hold promising potential for next-generation integrated circuit chips and telecommunication technologies. Thanks to the strategic material design and device integration, anti-ambipolar heterojunctions have demonstrated unparalleled device and circuit performance that surpasses other semiconducting material systems. This review aims to provide a comprehensive summary of the achievements in the field of anti-ambipolar heterojunctions. First, the fundamental operating mechanisms of anti-ambipolar devices are discussed. After that, potential materials used in anti-ambipolar devices are discussed with particular attention to 2D-based, 1D-based, and organic-based heterojunctions. Next, the primary device applications employing anti-ambipolar heterojunctions, including anti-ambipolar transistors (AATs), photodetectors, frequency doublers, and synaptic devices, are summarized. Furthermore, alongside the advancements in individual devices, the practical integration of these devices at the circuit level, including topics such as MVL circuits, complex logic gates, and spiking neuron circuits, is also discussed. Lastly, the present key challenges and future research directions concerning anti-ambipolar heterojunctions and their applications are also emphasized.

Mass Inversion at the Lifshitz Transition in Monolayer Graphene by Diffusive, High-Density, On-Chip Doping

Experimental setups for charge transport measurements are typically not compatible with the ultrahigh vacuum conditions for chemical doping, limiting the charge carrier density that can be investigated by transport methods. Field-effect methods, including dielectric gating and ionic liquid gating, achieve too low a carrier density to induce electronic phase transitions. To bridge this gap, we developed an integrated flip-chip method to dope graphene by alkali vapor in the diffusive regime, suitable for charge transport measurements at ultrahigh charge carrier density. We introduce a cesium droplet into a sealed cavity filled with inert gas to dope a monolayer graphene sample by the process of cesium atom diffusion, adsorption, and ionization at the graphene surface, with doping beyond an electron density of 4.7 × 1014 cm-2 monitored by operando Hall measurement. The sealed assembly is stable against oxidation, enabling measurement of charge transport versus temperature and magnetic field. Cyclotron mass inversion is observed via the Hall effect, indicative of the change in Fermi surface geometry associated with the Liftshitz transition at the hyperbolic M point of monolayer graphene. The transparent quartz substrate also functions as an optical window, enabling nonresonant Raman scattering. Our findings show that chemical doping, hitherto restricted to ultrahigh vacuum, can be applied in a diffusive regime at ambient pressure in an inert gas environment and thus enable charge transport studies in standard cryogenic environments.

Tuning the Fermi Level of Graphene by Two-Dimensional Metals for Raman Detection of Molecules

Graphene-enhanced Raman scattering (GERS) offers great opportunities to achieve optical sensing with a high uniformity and superior molecular selectivity. The GERS mechanism relies on charge transfer between molecules and graphene, which is difficult to manipulate by varying the band alignment between graphene and the molecules. In this work, we synthesized a few atomic layers of metal termed two-dimensional (2D) metal to precisely and deterministically modify the graphene Fermi level. Using copper phthalocyanine (CuPc) as a representative molecule, we demonstrated that tuning the Fermi level can significantly improve the signal enhancement and molecular selectivity of GERS. Specifically, aligning the Fermi level of graphene closer to the highest occupied molecular orbital (HOMO) of CuPc results in a more pronounced Raman enhancement. Density functional theory (DFT) calculations of the charge density distribution reproduce the enhanced charge transfer between CuPc molecules and graphene with a modulated Fermi level. Extending our investigation to other molecules such as rhodamine 6G, rhodamine B, crystal violet, and F16CuPc, we showed that 2D metals enabled Fermi level tuning, thus improving GERS detection for molecules and contributing to an enhanced molecular selectivity. This underscores the potential of utilizing 2D metals for the precise control and optimization of GERS applications, which will benefit the development of highly sensitive, specific, and reliable sensors.

Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene

Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets exhibits a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of ultra-thin tin films therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.

Dielectric engineered graphene transistors for high-performance near-infrared photodetection

Graphene, known for its ultrahigh carrier mobility and broadband optical absorption, holds significant potential in optoelectronics. However, the carrier mobility of graphene on silicon substrates experienced a marked decrease due to surface roughness, phonon scattering affects. Here we report carrier mobility enhancement of graphene dielectric engineering. Through the fabrication of devices utilizing Si/SiO2/Al2O3/graphene layers and subsequent electrical characterization, our findings illustrate the navigable nature of the Al2O3 dielectric layer is navigable for reducing the SiO2 phonon scattering and increasing graphene's carrier mobility by up to ∼8000 cm2V-1s-1. Furthermore, the improvement in carrier mobility of graphene has been utilized in the hybrid near-infrared photodetector, resulting in outstanding responsivity of ∼400 AW-1, detectivity of ∼2.2 ✕ 1011 Jones in the graphene/Ag2Te detector. Our study establishes pathways for the seamless integration of graphene or other 2D materials within the standard CMOS processes, thereby facilitating the fabrication of advanced optoelectronic devices.

Reversible Thermoelectric Regulation of Electromagnetic and Chemical Enhancement for Rapid SERS Detection

Actively controlling surface-enhanced Raman scattering (SERS) performance plays a vital role in highly sensitive detection or in situ monitoring. Nevertheless, it is still challenging to achieve further modulation of electromagnetic enhancement and chemical enhancement simultaneously in SERS detection. In this study, a silver nanocavity structure with graphene as a spacer layer is coupled with thermoelectric semiconductor P-type gallium nitride (GaN) to form an electric-field-induced SERS (E-SERS) for dual enhancement. After applying the electric field, the intensity of SERS signals is further enhanced by over 10 times. The thermoelectric field enables fast and reproducible doping of graphene, thereby modulating its Fermi level over a wide range. The thermoelectric field also regulates the position of the plasmon resonance peak of the silver nanocavity structure, rendering synchronous dual electromagnetic and chemical regulation. Additionally, the method enables the trace detection of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2). A detailed theoretical analysis is performed based on the experimental results and finite-element calculations, paving the way for the fabrication of high-efficient E-SERS substrates.

Metal Films on Two-Dimensional Materials: van der Waals Contacts and Raman Enhancement

Electronic devices based on two-dimensional (2D) materials will need ultraclean and defect-free van der Waals (vdW) contacts with three-dimensional (3D) metals. It is therefore important to understand how vdW metal films deposit on 2D surfaces. Here, we study the growth and nucleation of vdW metal films of indium (In) and non-vdW metal films of gold (Au), deposited on 2D MoS2 and graphene. In follows a 2D growth mode in contrast to Au that follows a 3D growth mode. Atomic force microscopy (AFM) and scanning electron microscopy (SEM) were used to image the morphology of metal clusters during growth and quantify the nucleation density. As compared to Au, In atoms exhibit nearly 50 times higher diffusivity (3.65 × 10-6 μm-2 s-1) and half the nucleation density (64.9 ± 2.46 μm-2), leading to larger grain sizes (∼60 nm for 5 nm In on monolayer MoS2). The grain size of In can be further increased by reducing the 2D surface roughness, while the grain size for Au is limited by its high nucleation density due to the creation of interface defects during deposition. The vdW gap between In and MoS2 and graphene leads to strong enhancement (>103) in their Raman signal intensity due to localized surface plasmon resonance. In the absence of a vdW gap, the plasmon-mediated enhancement in Raman does not occur.

Mapping nanoscale carrier confinement in polycrystalline graphene by terahertz spectroscopy

Terahertz time-domain spectroscopy (THz-TDS) can be used to map spatial variations in electrical properties such as sheet conductivity, carrier density, and carrier mobility in graphene. Here, we consider wafer-scale graphene grown on germanium by chemical vapor deposition with non-uniformities and small domains due to reconstructions of the substrate during growth. The THz conductivity spectrum matches the predictions of the phenomenological Drude-Smith model for conductors with non-isotropic scattering caused by backscattering from boundaries and line defects. We compare the charge carrier mean free path determined by THz-TDS with the average defect distance assessed by Raman spectroscopy, and the grain boundary dimensions as determined by transmission electron microscopy. The results indicate that even small angle orientation variations below 5° within graphene grains influence the scattering behavior, consistent with significant backscattering contributions from grain boundaries.

Graphene Fermi Level-Guided Attachment of Single Exoelectrogens and Induced Interfacial Doping

Graphene's exceptional electronic and mechanical properties make it a promising material for bioelectronic applications; however, understanding its interaction with electrogenic bacteria is crucial to harness its full potential. This study investigates the interface between electrogenic bacteria and graphene with Raman spectroscopy by analyzing the distinctive spectral fingerprints to understand electron energy and distribution via this non-destructive and label-free method. We find that the presence of bacteria induces a distinct red-shift in the G peak positions of graphene, indicating electron doping. Correspondingly, the bacteria demonstrate a predilection for attachment on hole-rich sites on the graphene sheet, evidenced by the comparative analysis of pre- and post-spatial Raman mapping, revealing their consistent presence within the hole-doped 2D peak position range of 2673.89-2675.43 cm-1. This affinity of bacteria is due to the overall higher Fermi level (∼4.9 ± 0.2 eV) of these regions, which favors electron transfer. These findings demonstrate the potential of leveraging the graphene's electronic properties in engineering graphene-based biosensors. Tuning graphene's charge carrier concentration would enable the promotion or prevention of bacterial attachment, facilitating capture of specific bacteria or development of antimicrobial surfaces. This approach enables clean, efficient, and accurate study of graphene-based bacterial systems, driving significant advancements and enhancing their performance.

Analysis of p-Type Doping in Graphene Induced by Monolayer-Oxidized TMDs

Doping is one of the most difficult technological challenges for realizing reliable two-dimensional (2D) material-based semiconductor devices, arising from their ultrathinness. Here, we systematically investigate the impact of different types of nonstoichiometric solid MOx (M are W or Mo) dopants obtained by oxidizing transition metal dichalcogenides (TMDs: WSe2 or MoS2) formed on graphene FETs, which results in p-type doping along with disorders. From the results obtained in this study, we were able to suggest an analytical technique to optimize the optimal UV-ozone (UVO) treatment to achieve high p-type doping concentration in graphene FETs (∼2.5 × 1013 cm-2 in this study) without generating defects, mainly by analyzing the time dependency of D and D' peaks measured by Raman spectroscopy. Furthermore, an analysis of the structure of graphene sheets using TEM indicates that WOx plays a better protective role in graphene, compared to MoOx, suggesting that WOx is more effective for preventing the degradation of graphene during UVO treatment. To enhance the practical application aspect of our work, we have fabricated a graphene photodetector by selectively doping the graphene through oxidized TMDs, creating a p-n junction, which resulted in improved photoresponsivity compared to the intrinsic graphene device. Our results offer a practical guideline for the utilization of surface charge transfer doping of graphene toward CMOS applications.

Resonant Raman scattering on graphene: SERS and gap-mode TERS

Nanoscale deformations and corrugations occur in graphene-like two-dimensional materials during their incorporation into hybrid structures and real devices, such as sensors based on surface-enhanced Raman scattering (SERS-based sensors). The structural features mentioned above are known to affect the electronic properties of graphene, thus highly sensitive and high-resolution techniques are required to reveal and characterize arising local defects, mechanical deformations, and phase transformations. In this study, we demonstrate that gap-mode tip-enhanced Raman Scattering (gm-TERS), which offers the benefits of structural and chemical analytical methods, allows variations in the structure and mechanical state of a two-dimensional material to be probed with nanoscale spatial resolution. In this work, we demonstrate locally enhanced gm-TERS on a monolayer graphene film placed on a plasmonic substrate with specific diameter gold nanodisks. SERS measurements are employed to determine the optimal disk diameter and excitation wavelength for further realization of gm-TERS. A significant local plasmonic enhancement of the main vibrational modes in graphene by a factor of 100 and a high spatial resolution of 10 nm are achieved in the gm-TERS experiment, making gm-TERS chemical mapping possible. By analyzing the gm-TERS spectra of the graphene film in the local area of a nanodisk, the local tensile mechanical strain in graphene was detected, resulting in a split of the G mode into two components, G+ and G-. Using the frequency split in the positions of G+ and G- modes in the TERS spectra, the stress was estimated to be up to 1.5%. The results demonstrate that gap-mode TERS mapping allows rapid and precise characterization of local structural defects in two-dimensional materials on the nanoscale.

Villin headpiece unfolding upon binding to boridene mediated by the "anchoring-perturbation" mechanism

We employ molecular dynamics (MD) simulations to investigate the influence of boridene on the behavior of a protein model, HP35, with the aim of assessing the potential biotoxicity of boridene. Our MD results reveal that HP35 can undergo unfolding via an "anchoring-perturbation" mechanism upon adsorption onto the boridene surface. Specifically, the third helix of HP35 becomes tightly anchored to the boridene surface through strong electrostatic interactions between the abundant molybdenum atoms on the boridene surface and the oxygen atoms on the HP35 backbone. Meanwhile, the first helix, experiencing continuous perturbation from the surrounding water solution over an extended period, suffers from potential breakage of hydrogen bonds, ultimately resulting in its unfolding. Our findings not only propose, for the first time to our knowledge, the "anchoring-perturbation" mechanism as a guiding principle for protein unfolding but also reveal the potential toxicity of boridene on protein structures.

Transparent Patternable Large-Area Graphene p-n Junctions by Photoinduced Electron Doping

We present a novel approach to achieve n-type doping in graphene and create graphene p-n junctions through a photoinduced electron doping method using photobase generators (PBGs). The unique properties of PBGs allow us to spatially and temporally control the doping process via light activation. The selective irradiation of specific regions on the graphene film enables switching their doping from p- to n-type, as confirmed by changes in the electromotive force and Seebeck and Hall coefficients. We demonstrate a stable (over 2 months) high electron mobility exceeding 1000 cm2 V-1s-1 using Hall effect measurements. The precise control of doping and the creation of p-n junctions in graphene offer exciting possibilities for various electronic, optoelectronic, and thermoelectric applications. Furthermore, we fabricate transparent graphene thermocouples with a high electromotive force of approximately ca. 80 μV/K, which validates the reliability and effectiveness of our approach for temperature sensing applications. This work paves the way for high-performance graphene-based electronic devices via controlled doping and patterning techniques. These findings provide valuable insights for the practical implementation of graphene in various fields.

Challenges for Field-Effect-Transistor-Based Graphene Biosensors

Owing to its outstanding physical properties, graphene has attracted attention as a promising biosensor material. Field-effect-transistor (FET)-based biosensors are particularly promising because of their high sensitivity that is achieved through the high carrier mobility of graphene. However, graphene-FET biosensors have not yet reached widespread practical applications owing to several problems. In this review, the authors focus on graphene-FET biosensors and discuss their advantages, the challenges to their development, and the solutions to the challenges. The problem of Debye screening, in which the surface charges of the detection target are shielded and undetectable, can be solved by using small-molecule receptors and their deformations and by using enzyme reaction products. To address the complexity of sample components and the detection mechanisms of graphene-FET biosensors, the authors outline measures against nonspecific adsorption and the remaining problems related to the detection mechanism itself. The authors also introduce a solution with which the molecular species that can reach the sensor surfaces are limited. Finally, the authors present multifaceted approaches to the sensor surfaces that provide much information to corroborate the results of electrical measurements. The measures and solutions introduced bring us closer to the practical realization of stable biosensors utilizing the superior characteristics of graphene.

Visualizing Ribbon-to-Ribbon Heterogeneity of Chemically Unzipped Wide Graphene Nanoribbons by Silver Nanowire-Based Tip-Enhanced Raman Scattering Microscopy

Graphene nanoribbons (GNRs), a quasi-one-dimensional form of graphene, have gained tremendous attention due to their potential for next-generation nanoelectronic devices. The chemical unzipping of carbon nanotubes is one of the attractive fabrication methods to obtain single-layered GNRs (sGNRs) with simple and large-scale production.  The authors recently found that unzipping from double-walled carbon nanotubes (DWNTs), rather than single- or multi-walled, results in high-yield production of crystalline sGNRs. However, details of the resultant GNR structure, as well as the reaction mechanism, are not fully understood due to the necessity of nanoscale spectroscopy. In this regard, silver nanowire-based tip-enhanced Raman spectroscopy (TERS) is applied for single GNR analysis and investigated ribbon-to-ribbon heterogeneity in terms of defect density and edge structure generated through the unzipping process.  The authors found that sGNRs originated from the inner walls of DWNTs showed lower defect densities than those from the outer walls. Furthermore, TERS spectra of sGNRs exhibit a large variety in graphitic Raman parameters, indicating a large variation in edge structures. This work at the single GNR level reveals, for the first time, ribbon-to-ribbon heterogeneity that can never be observed by diffraction-limited techniques and provides deeper insights into unzipped GNR structure as well as the DWNT unzipping reaction mechanism.

Laser-induced graphene on cross-linked sodium alginate

Laser-induced graphene (LIG) possesses desirable properties for numerous applications. However, LIG formation on biocompatible substrates is needed to further augment the integration of LIG-based technologies into nanobiotechnology. Here, LIG formation on cross-linked sodium alginate is reported. The LIG is systematically investigated, providing a comprehensive understanding of the physicochemical characteristics of the material. Raman spectroscopy, scanning electron microscopy with energy-dispersive x-ray analysis, x-ray diffraction, transmission electron microscopy, Fourier-transform infrared spectroscopy and x-ray photoelectron spectroscopy techniques confirm the successful generation of oxidized graphene on the surface of cross-linked sodium alginate. The influence of laser parameters and the amount of crosslinker incorporated into the alginate substrate is explored, revealing that lower laser speed, higher resolution, and increased CaCl2content leads to LIG with lower electrical resistance. These findings could have significant implications for the fabrication of LIG on alginate with tailored conductive properties, but they could also play a guiding role for LIG formation on other biocompatible substrates.

Graphene quantum dots blocking the channel egresses of cytochrome P450 enzyme (CYP3A4) reveals potential toxicity

Graphene quantum dots (GQDs) have garnered significant attention, particularly in the biomedical domain. However, extensive research reveals a dichotomy concerning the potential toxicity of GQDs, presenting contrasting outcomes. Therefore, a comprehensive understanding of GQD biosafety necessitates a detailed supplementation of their toxicity profile. In this study, employing a molecular dynamics (MD) simulation approach, we systematically investigate the potential toxicity of GQDs on the CYP3A4 enzyme. We construct two distinct simulation systems, wherein a CYP3A4 protein is enveloped by either GQDs or GOQDs (graphene oxide quantum dots). Our results elucidate that GQDs come into direct contact with the bottleneck residues of Channels 2a and 2b of CYP3A4. Furthermore, GQDs entirely cover the exits of Channels 2a and 2b, implying a significant hindrance posed by GQDs to these channels and consequently leading to toxicity towards CYP3A4. In-depth analysis reveals that the adsorption of GQDs to the exits of Channels 2a and 2b is driven by a synergistic interplay of hydrophobic and van der Waals (vdW) interactions. In contrast, GOQDs only partially obstruct Channel 1 of CYP3A4, indicating a weaker influence on CYP3A4 compared to GQDs. Our findings underscore the potential deleterious impact of GQDs on the CYP3A4 enzyme, providing crucial molecular insights into GQD toxicology.

Surface defect healing in annealing from nanoporous carbons to nanoporous graphenes

Nanoporous graphene (NPG) materials have the pronounced electrochemical stability of the seamless graphene structures developed over the 3D space. We revisited the Raman spectra of nanoporous carbons (NPCs) synthesized using θ-/γ-Al2O3 templates and NPGs converted from NPCs by annealing at 1800 °C to identify the type and density of defects. We found that both the NPCs and NPGs mostly consist of single-layered graphene with a few single vacancies and Stone-Wales defects. The density of vacancy defect per hexagon in the graphene sheet is estimated to be 10-2 for NPCs, while the annealing reduced the value to 10-3-10-4 for NPGs. This supports the outstanding chemical and electrochemical stability of the novel porous carbon materials.

Langmuir-Blodgett Monolayer of Cobalt Phthalocyanine as Ultralow Loading Single-Atom Catalyst for Highly Efficient H2O2 Production

The electrochemical production of H2O2 via the two-electron oxygen-reduction reaction (2e- ORR) has been actively studied using systems with atomically dispersed metal-nitrogen-carbon (M-N-C) structures. However, the development of well-defined M-N-C structures that restrict the migration and agglomeration of single-metal sites remains elusive. Herein, we demonstrate a Langmuir-Blodgett (LB) monolayer of cobalt phthalocyanine (CoPc) on monolayer graphene (LB CoPc/G) as a single-metal catalyst for the 2e- ORR. The as-prepared CoPc LB monolayer has a β-form crystalline structure with a lattice space for the facile adsorption of oxygen molecules on the cobalt active sites. The CoPc LB monolayer system provides highly exposed Co atoms in a well-defined structure without agglomeration, resulting in significantly improved catalytic activity, which is manifested by a very high H2O2 production rate per catalyst (31.04 mol gcat-1 h-1) and TOF (36.5 s-1) with constant production stability for 24 hours. To the best of our knowledge, the CoPc LB monolayer system exhibits the highest H2O2 production rate per active site. This fundamental study suggests that an LB monolayer of molecules with single-metal atoms as a well-defined structure works for single-atom catalysts.

Modulating the Electrochemical Intercalation of Graphene Interfaces with α-RuCl3 as a Solid-State Electron Acceptor

Intercalation reactions modify the charge density in van der Waals (vdW) materials through coupled electronic-ionic charge accumulation and are susceptible to modulation by interlayer hybridization in vdW heterostructures. Here, we demonstrate that charge transfer between graphene and α-RuCl3, which hole-dopes the graphene, greatly favors the intercalation of lithium ions into graphene-based vdW heterostructures. We systematically tune this effect on Li+ ion intercalation, modulating the intercalation potential, by using varying thicknesses of hexagonal boron nitride (hBN) as spacer layers between graphene and α-RuCl3. Confocal Raman spectroscopy and electronic transport measurements are used to monitor electrochemical intercalation, and density functional theory computations help quantify charge transfer to both α-RuCl3 and graphene upon Li intercalation. This work demonstrates a versatile approach for systematically modulating the electrochemical intercalation behavior of two-dimensional layers akin to electron donating/withdrawing substituent effects used to tune molecular redox potentials.

Label-Free Neuropeptide Detection beyond the Debye Length Limit

Biosensors with high selectivity, high sensitivity, and real-time detection capabilities are of significant interest for diagnostic applications as well as human health and performance monitoring. Graphene field-effect transistor (GFET) based biosensors are suitable for integration into wearable sensor technology and can potentially demonstrate the sensitivity and selectivity necessary for real-time detection and monitoring of biomarkers. Previously reported DC-mode GFET biosensors showed a high sensitivity for sensing biomarkers in solutions with a low salt concentration. However, due to Debye length screening, the sensitivity of the DC-mode GFET biosensors decreases significantly during operation in a physiological fluid such as sweat or interstitial fluid. To overcome the Debye screening length limitation, we report here alternating current (AC) mode heterodyne-based GFET biosensors for sensing neuropeptide-Y (NPY), a key stress biomarker, in artificial sweat at physiologically relevant ionic concentrations. Our AC-mode GFET biosensors show a record ultralow detection limit of 2 × 10-18 M with an extensive dynamic range of 10 orders of magnitude in sensor response to target NPY concentration. The sensors were characterized for various carrier frequencies (ranging from 30 kHz to 2 MHz) of the applied AC voltages and various salt concentrations (10, 50, and 100 mM). Contrary to DC-mode sensing, the AC-mode sensor response increases with an increase in salt concentration in the electrolyte. The sensor response can be further enhanced by tuning the carrier frequency of the applied AC voltage. The optimum response frequency of our sensor is approximately 400-600 kHz for salt concentrations of 50 and 100 mM, respectively. The salt-concentration- and frequency-dependent sensor response can be explained by an electrolyte-gated capacitance model.

Three-dimensional graphene on a nano-porous 4H-silicon carbide backbone: a novel material for food sensing applications

BACKGROUND

Sensors that are sensitive to volatile organic compounds, and thus able to monitor the conservation state of food, are precious because they work non-destructively and allow avoiding direct contact with the food, ensuring hygienic conditions. In particular, the monitoring of rancidity would solve a widespread issue in food storage.

RESULTS

The sensor discussed here is produced utilizing a novel three-dimensional arrangement of graphene, which is grown on a crystalline silicon carbide wafer previously porousified by chemical etching. This approach allows a very high surface-to-volume ratio. Furthermore, the structure of the sensor surface features a large number of edges, dangling bounds, and active sites, which make the sensor, on a chemically robust skeleton, chemically active, particularly to hydrogenated molecules. The interaction of the sensor with such compounds is read out by measuring the sensor resistance in a four-wire configuration. The sensor performance has been assessed on three hazelnut samples: sound, spoiled, and stink bug hazelnuts. A resistance variation of about ∆R = 0.13 ± 0.02 Ω between sound and damaged hazelnuts has been detected.

CONCLUSIONS

Our measurements confirm the ability of the sensor to discriminate between sound and damaged hazelnuts. The sensor signal is stable for days, providing the possibility to use this sensor for the monitoring of the storage state of fats and foods in general. © 2023 Society of Chemical Industry.

Gate-controlled suppression of light-driven proton transport through graphene electrodes

Recent experiments demonstrated that proton transport through graphene electrodes can be accelerated by over an order of magnitude with low intensity illumination. Here we show that this photo-effect can be suppressed for a tuneable fraction of the infra-red spectrum by applying a voltage bias. Using photocurrent measurements and Raman spectroscopy, we show that such fraction can be selected by tuning the Fermi energy of electrons in graphene with a bias, a phenomenon controlled by Pauli blocking of photo-excited electrons. These findings demonstrate a dependence between graphene's electronic and proton transport properties and provide fundamental insights into molecularly thin electrode-electrolyte interfaces and their interaction with light.

Functionalized-Graphene Field Effect Transistor-Based Biosensor for Ultrasensitive and Label-Free Detection of β-Galactosidase Produced by Escherichia coli

The detection of β-galactosidase (β-gal) activity produced by Escherichia coli (E. coli) can quickly analyze the pollution degree of seawater bodies in bathing and fishing grounds to avoid large-scale outbreaks of water pollution. Here, a functionalized biosensor based on graphene-based field effect transistor (GFET) modified with heat-denatured casein was developed for the ultrasensitive and label-free detection of the β-gal produced by E. coli in real water samples. The heat-denatured casein coated on the graphene surface, as a probe linker and blocker, plays an important role in fabricating GEFT biosensor. The GFET biosensor response to the β-gal produced by E. coli has a wide concentration dynamic range spanning nine orders of magnitude, in a concentration range of 1 fg·mL-1-100 ng·mL-1, with a limit of detection (LOD) 0.187 fg·mL-1 (1.61 aM). In addition to its attomole sensitivity, the GFET biosensor selectively recognized the β-gal in the water sample and showed good selectivity. Importantly, the detection process of the β-gal produced by E. coli can be completed by a straightforward one-step specific immune recognition reaction. These results demonstrated the usefulness of the approach, meeting environmental monitoring requirements for future use.

Tuneable effects of pyrrolic N and pyridinic N on the enhanced field emission properties of nitrogen-doped graphene

Graphene is one of the most potential field emission cathode materials and a lot of work has been carried out to demonstrate the effectiveness of nitrogen doping (N doping) for the enhancement of field emission properties of graphene. However, the effect of N doping on graphene field emission is lacking systematic and thorough understanding. In this study, undoped graphene and N-doped graphene were prepared and characterized for measurements, and the field emission property dependence of the doping content was investigated and the tuneable effect was discussed. For the undoped graphene, the turn-on field was 7.95 V μm-1 and the current density was 7.3 μA cm-2, and for the 10 mg, 20 mg, and 30 mg N-doped graphene samples, the turn-on fields declined to 7.50 V μm-1, 6.38 V μm-1, and 7.28 V μm-1, and current densities increased to 21.0 μA cm-2, 42.6 μA cm-2, and 13.2 μA cm-2, respectively. Density functional theory (DFT) calculations revealed that N doping could bring about additional charge and then cause charge aggregation around the N atom. At the same time, it also lowered the work function, which further enhanced the field emission. The doping effect was determined by the content of the pyrrolic-type N and pyridinic-type N. Pyridinic-type N is more favourable for field emission because of its smaller work function, which is in good agreement with the experimental results. This study would be of great benefit to the understanding of N doping modulation for superior field emission properties.

Spatially Coherent Tip-Enhanced Raman Spectroscopy Measurements of Electron-Phonon Interaction in a Graphene Device

Coherence length (Lc) of the Raman scattering process in graphene as a function of Fermi energy is obtained with spatially coherent tip-enhanced Raman spectroscopy. Lc decreases when the Fermi energy is moved into the neutrality point, consistent with the concept of the Kohn anomaly within a ballistic transport regime. Since the Raman scattering involves electrons and phonons, the observed results can be rationalized either as due to unusually large variation of the longitudinal optical phonon group velocity vg, reaching twice the value for the longitudinal acoustic phonon, or due to changes in the electron energy uncertainty, both properties being important for optical and transport phenomena that might not be observable by any other technique.

Critical Point Drying of Graphene Field-Effect Transistors Improves Their Electric Transport Characteristics

A critical point drying (CPD) technique is reported with supercritical CO2 as a cleaning step for graphene field-effect transistors (GFETs) microfabricated on oxidized Si wafers, which results in an increase of the field-effect mobility and a decrease of the impurity doping. It is shown that the polymeric residues remaining on graphene after the transfer process and device microfabrication are significantly reduced after the CPD treatment. Moreover, the CPD effectively removes ambient adsorbates such as water therewith reducing the undesirable p-type doping of the GFETs. It is proposed that CPD of electronic, optoelectronic, and photonic devices based on 2D materials as a promising technique to recover their intrinsic properties after the microfabrication in a cleanroom and after storage at ambient conditions.

Electrochemically-gated graphene broadband microwave waveguides for ultrasensitive biosensing

Identification of non-amplified DNA sequences and single-base mutations is essential for molecular biology and genetic diagnostics. This paper reports a novel sensor consisting of electrochemically-gated graphene coplanar waveguides coupled with a microfluidic channel. Upon exposure to analytes, propagation of electromagnetic waves in the waveguides is modified as a result of interactions with the fringing field and modulation of graphene dynamic conductivity resulting from electrostatic gating. Probe DNA sequences are immobilised on the graphene surface, and the sensor is exposed to DNA sequences which either perfectly match the probe, contain a single-base mismatch or are unrelated. By monitoring the scattering parameters at frequencies between 50 MHz and 50 GHz, unambiguous and reproducible discrimination of the different strands is achieved at concentrations as low as one attomole per litre (1 aM). By controlling and synchronising frequency sweeps, electrochemical gating, and liquid flow in the microfluidic channel, the sensor generates multidimensional datasets. Advanced data analysis techniques are utilised to take full advantage of the richness of the dataset. A classification accuracy >97% between all three sequences is achieved using different Machine Learning models, even in the presence of simulated noise and low signal-to-noise ratios. The sensor exceeds state-of-the-art sensitivity of field-effect transistors and microwave sensors for the identification of single-base mismatches.

Mixed-Dimensional van der Waals Heterostructures for Boosting Electricity Generation

The emerging technology of harvesting environmental energy using hydrovoltaic devices enriches the conversion forms of renewable energy. It provides more concepts for power supply in micro/nano systems, and hydrovoltaic technology with high performance, usability, and integration is essential for achieving sustainable green energy. Comparing the discovery of multiscale nanomaterials, working layers with innovative microstructures have gradually become the dominant trend in the construction of graphene-based hydrovoltaic devices. However, reports on promoting ion/electron redistribution at the solid-liquid interface through the substrate effect of graphene are accompanied by tedious procedures, nondiverse substrates, and monolithic regulation of enhancement mechanisms. Here, the electrophoretic deposition (EPD)-driven SiC whiskers (SiCw)-assisted graphene transfer process is adopted to alleviate the complexity of the device fabrication caused by graphene transfer. The resulting output performance of the graphene/SiCw (GS) mesh films is significantly boosted. The high integrity of graphene and prominent negative surface charge near the graphene-droplet interface are derived from the overlayer and underlayer inside the graphene-based mixed-dimensional van der Waals (vdW) heterostructures, respectively. Additionally, a self-powered desalination-monitoring system is designed based on integrated hydrovoltaic devices. Electricity harvested from the ionic solutions is reused for deionization, representing an efficient strategy for energy conversion and utilization.

Electrically Tunable Nonlinearity at 3.2 Terahertz in Single-Layer Graphene

Graphene is a nonlinear material in the terahertz (THz) frequency range, with χ(3) ∼ 10-9 m2/V2 ∼ 15 orders of magnitude higher than that of other materials used in the THz range, such as GaAs or lithium niobate. This nonlinear behavior, combined with ultrafast dynamic for excited carriers, proved to be essential for third harmonic generation in the sub-THz and low (<2.5 THz) THz range, using moderate (60 kV/cm) fields and at room temperature. Here, we show that, for monochromatic high peak power (1.8 W) input THz signals, emitted by a quantum cascade laser, the nonlinearity can be controlled using an ionic liquid gate that tunes the graphene Fermi energy up to >1.2 eV. Pump and probe experiments reveal an intense absorption nonlinearity at 3.2 THz, with a dominant 3rd-order contribution at EF > 0.7 eV, hence opening intriguing perspectives per engineering novel architectures for light generation at frequencies > 9 THz.

Direct Observation of Topological Phonons in Graphene

Phonons, as the most fundamental emergent bosons in condensed matter systems, play an essential role in the thermal, mechanical, and electronic properties of crystalline materials. Recently, the concept of topology has been introduced to phonon systems, and the nontrivial topological states also exist in phonons due to the constraint by the crystal symmetry of the space group. Although the classification of various topological phonons has been enriched theoretically, experimental studies were limited to several three-dimensional (3D) single crystals with inelastic x-ray or neutron scatterings. The experimental evidence of topological phonons in two-dimensional (2D) materials is absent. Here, using high-resolution electron energy loss spectroscopy following our theoretical predictions, we directly map out the phonon spectra of the atomically thin graphene in the entire 2D Brillouin zone, and observe two nodal-ring phonons and four Dirac phonons. The closed loops of nodal-ring phonons and the conical structure of Dirac phonons in 2D momentum space are clearly revealed by our measurements, in nice agreement with our theoretical calculations. The ability of 3D mapping (2D momentum space and energy space) of phonon spectra opens up a new avenue to the systematic identification of the topological phononic states. Our work lays a solid foundation for potential applications of topological phonons in superconductivity, dynamic instability, and phonon diode.

Nitrogen Pretreatment of Growth Substrates for Vacancy-Saturated MoS2

Two-dimensional transition-metal dichalcogenides (2D TMDCs) are considered promising materials for optoelectronics due to their unique optical and electric properties. However, their potential has been limited by the occurrence of atomic vacancies during synthesis. While post-treatment processes have demonstrated the passivation of such vacancies, they increase process complexity and affect the TMDC's quality. We here introduce the concept of pretreatment as a facile and powerful route to solve the problem of vacancies in MoS2. Low-temperature nitridation of the sapphire substrate prior to growth provides a nondestructive method to MoS2 modification without introducing new processing steps or increasing the thermal budget. Spectroscopic characterization and atomic-resolution microscopy reveal the incorporation of nitrogen from the sapphire surface layer into chalcogen vacancies. The resulting MoS2 with nitrogen-saturated defects shows a decrease in midgap states and more intrinsic doping as confirmed by ab initio calculations and optoelectronic measurements. The demonstrated pretreatment method opens up new routes toward future, high-performance 2D electronics, as evidenced by a 3-fold reduction in contact resistance and a 10-fold improved performance of 2D photodetectors.

Realizing On/Off Ratios over 104 for Sub-2 nm Vertical Transistors

Vertical transistors hold promise for the development of ultrascaled transistors. However, their on/off ratios are limited by a strong source-drain tunneling current in the off state, particularly for vertical devices with a sub-5 nm channel length. Here, we report an approach for suppressing the off-state tunneling current by designing the barrier height via a van der Waals metal contact. Via lamination of the Pt electrode on a MoS2 vertical transistor, a high Schottky barrier is observed due to their large work function difference, thus suppressing direct tunneling currents. Meanwhile, this "low-energy" lamination process ensures an optimized metal/MoS2 interface with minimized interface states and defects. Together, the highest on/off ratios of 5 × 105 and 104 are realized in vertical transistors with 5 and 2 nm channel lengths, respectively. Our work not only pushes the on/off ratio limit of vertical transistors but also provides a general rule for reducing short-channel effects in ultrascaled devices.

Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics

The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor's interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers.

Structure evolution at the gate-tunable suspended graphene-water interface

Graphitic electrode is commonly used in electrochemical reactions owing to its excellent in-plane conductivity, structural robustness and cost efficiency1,2. It serves as prime electrocatalyst support as well as a layered intercalation matrix2,3, with wide applications in energy conversion and storage1,4. Being the two-dimensional building block of graphite, graphene shares similar chemical properties with graphite1,2, and its unique physical and chemical properties offer more varieties and tunability for developing state-of-the-art graphitic devices5-7. Hence it serves as an ideal platform to investigate the microscopic structure and reaction kinetics at the graphitic-electrode interfaces. Unfortunately, graphene is susceptible to various extrinsic factors, such as substrate effect8-10, causing much confusion and controversy7,8,10,11. Hereby we have obtained centimetre-sized substrate-free monolayer graphene suspended on aqueous electrolyte surface with gate tunability. Using sum-frequency spectroscopy, here we show the structural evolution versus the gate voltage at the graphene-water interface. The hydrogen-bond network of water in the Stern layer is barely changed within the water-electrolysis window but undergoes notable change when switching on the electrochemical reactions. The dangling O-H bond protruding at the graphene-water interface disappears at the onset of the hydrogen evolution reaction, signifying a marked structural change on the topmost layer owing to excess intermediate species next to the electrode. The large-size suspended pristine graphene offers a new platform to unravel the microscopic processes at the graphitic-electrode interfaces.

Moderate binding of villin headpiece protein to C3N3 nanosheet reveals the suitable biocompatibility of this nanomaterial

Since its recent successful synthesis and due to its promising physical and chemical properties, the carbon nitrite nanomaterial, C3N3, has attracted considerable attention in various scientific areas. However, thus far, little effort has been devoted to investigating the structural influence of the direct interaction of this 2D nanomaterial and biomolecules, including proteins and biomembranes so as to understand the physical origin of its bio-effect, particularly from the molecular landscape. Such information is fundamental to correlate to the potential nanotoxicology of the C3N3 nanomaterial. In this work, we explored the potential structural influence of a C3N3 nanosheet on the prototypical globular protein, villin headpiece (HP35) using all-atom molecular dynamics (MD) simulations. We found that HP35 could maintain its native conformations upon adsorption onto the C3N3 nanosheet regardless of the diversity in the binding sites, implying the potential advantage of C3N3 in protecting the biomolecular structure. The adsorption was mediated primarily by vdW interactions. Moreover, once adsorbed on the C3N3 surface, HP35 remains relatively fixed on the nanostructure without a distinct lateral translation, which may aid in keeping the structural integrity of the protein. In addition, the porous topological structure of C3N3 and the special water layer present on the C3N3 holes conjointly contributed to the restricted motion of HP35 via the formation of a high free energy barrier and a steric hindrance to prevent the surface displacement. This work revealed for the first time the potential influence of the 2D C3N3 nanomaterial in the protein structure and provided the corresponding in-depth molecular-level mechanism, which is valuable for future applications of C3N3 in bionanomedicine.

Spectral Tuning of a Nanoparticle-on-Mirror System by Graphene Doping and Gap Control with Nitric Acid

Nanoparticle-on-mirror systems are a stable, robust, and reproducible method of squeezing light into sub-nanometer volumes. Graphene is a particularly interesting material to use as a spacer in such systems as it is the thinnest possible 2D material and can be doped both chemically and electrically to modulate the plasmonic modes. We investigate a simple nanoparticle-on-mirror system, consisting of a Au nanosphere on top of an Au mirror, separated by a monolayer of graphene. With this system, we demonstrate, with both experiments and numerical simulations, how the doping of the graphene and the control of the gap size can be controlled to tune the plasmonic response of the coupled nanosphere using nitric acid. The coupling of the Au nanosphere and Au thin film reveals multipolar modes which can be tuned by adjusting the gap size or doping an intermediate graphene monolayer. At high doping levels, the interaction between the charge-transfer plasmon and gap plasmon leads to splitting of the plasmon energies. The study provides evidence for the unification of theories proposed by previous works investigating similar systems.

Facile one-step hydrothermal synthesis of monolayer and turbostratic bilayer n-doped graphene quantum dots using sucrose as a carbon source

Graphene quantum dots (GQDs) have attracted attention from researchers owing to their outstanding properties, such as chemical inertness, stable photoluminescence (PL), biocompatibility, and low toxicity, which make them suitable for bioimaging, optoelectronic device, sensor, and others. At present, there are several studies that report the effect of the size of GQDs on their properties; however, but there is only a few studies that report the effect of the thickness of GQDs on their properties. It may be attributed to the difficulty to obtain the accurate information on the thickness of GQDs. In this study, we demonstrate the facile and one-step hydrothermal synthesis of monolayer and bilayer n-doped graphene quantum dots (NGQDs) using sucrose as a carbon source. UV-visible and PL spectra show the quantum yield of the NGQDs is 4.9 times higher than that of the GQDs. Besides, the NGQDs exhibit sensitive PL for Ag+ ions. In addition, the thickness distribution and interlayer spacing of NGQDs are revealed by X-ray diffraction (XRD) curve fitting, which is calculated using a simple and accurate equation. The information on the structure of the NGQDs from the XRD curve fitting is in a good agreement with the Raman results. This accurate estimation of the structure of GQDs by XRD curve fitting using the simple equation may extend the limits of GDQ study.

Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector

Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 10⁹ Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.

Graphene-Based Optoelectronic Mixer Device for Time-of-Flight Distance Measurements for Enhanced 3D Imaging Applications

A large and growing number of applications benefit from innovative and powerful 3D image sensors. Graphene photodetectors can achieve 3D sensing functionalities by intrinsic optoelectronic frequency mixing due to the nonlinear output characteristics of the sensor. In first proof of principle distance measurement demonstrations, we achieve modulation frequencies of 3.1 MHz, signal-to-noise ratios of ∼40 dB, distance detection up to at least 1 m, and a mean accuracy of 25.6 mm. The scalable More than Moore detector approach enables geometrical fill factors close to 100% and can easily complement powerful functionalities by simple back-end integration on top of CMOS electronics.

In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO3

van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxially grown molybdenum trioxide layers with an elongated superlattice. The grown molybdenum trioxide layers led to high p-doping of the underlying graphene up to p = 1.94 × 1013 cm-2 regardless of the thickness of molybdenum trioxide, maintaining a high carrier mobility of 8155 cm2 V-1 s-1. Molybdenum trioxide-induced compressive strain in graphene increased up to -0.6% with increasing molybdenum trioxide thickness. The asymmetrical band distortion of molybdenum trioxide-deposited graphene at the Fermi level led to in-plane electrical anisotropy with a high conductance ratio of 1.43 owing to the strong interlayer interaction of molybdenum trioxide-graphene. Our study presents a symmetry engineering method to induce anisotropy in symmetric two-dimensional (2D) materials via the formation of asymmetric superlattices with epitaxially grown 2D layers.

Gate-Controlled Quantum Interference Effects in a Clean Single-Wall Carbon Nanotube p-n Junction

The precise control and deep understanding of quantum interference in carbon nanotube (CNT) devices are particularly crucial not only for exploring quantum coherent phenomena in clean one-dimensional electronic systems, but also for developing carbon-based nanoelectronics or quantum devices. Here, we construct a double split-gate structure to explore the Aharonov-Bohm (AB) interference effect in individual single-wall CNT p-n junction devices. For the first time, we achieve the AB modulation of conductance with coaxial magnetic fields as low as 3 T, where the flux through the tube is much smaller than the flux quantum. We further demonstrate direct electric-field control of the nonmonotonic magnetoconductance through a gate-tunable built-in electric field, which can be quantitatively understood in combination with the AB phase effect and Landau-Zener tunneling in a CNT p-n junction. Moreover, the nonmonotonic magnetoconductance behavior can be strongly enhanced in the presence of Fabry-Pérot resonances. Our Letter paves the way for exploring and manipulating quantum interference effects with combining magnetic and electric field controls.