Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics

Permeable Bioelectronics toward Biointegrated Systems

Bioelectronics integrates electronics with biological organs, sustaining the natural functions of the organs. Organs dynamically interact with the external environment, managing internal equilibrium and responding to external stimuli. These interactions are crucial for maintaining homeostasis. Additionally, biological organs possess a soft and stretchable nature; encountering objects with differing properties can disrupt their function. Therefore, when electronic devices come into contact with biological objects, the permeability of these devices, enabling interactions and substance exchanges with the external environment, and the mechanical compliance are crucial for maintaining the inherent functionality of biological organs. This review discusses recent advancements in soft and permeable bioelectronics, emphasizing materials, structures, and a wide range of applications. The review also addresses current challenges and potential solutions, providing insights into the integration of electronics with biological organs.

Wearable Sensors for Breath Monitoring Based on Water-Based Hexagonal Boron Nitride Inks Made with Supramolecular Functionalization

Wearable humidity sensors are attracting strong attention as they allow for real-time and continuous monitoring of important physiological information by enabling activity tracking as well as air quality assessment. Amongst 2Dimensional (2D) materials, graphene oxide (GO) is very attractive for humidity sensing due to its tuneable surface chemistry, high surface area, processability in water, and easy integration onto flexible substrates. However, strong hysteresis, low sensitivity, and cross-sensitivity issues limit the use of GO in practical applications, where continuous monitoring is preferred. Herein, a wearable and wireless impedance-based humidity sensor made with pyrene-functionalized hexagonal boron nitride (h-BN) nanosheets is demonstrated. The device shows enhanced sensitivity towards relative humidity (RH) (>1010 Ohms/%RH in the range from 5% to 100% RH), fast response (0.1 ms), no appreciable hysteresis, and no cross-sensitivity with temperature in the range of 25-60 °C. The h-BN-based sensor is able to monitor the whole breathing cycle process of exhaling and inhaling, hence enabling to record in real-time the subtlest changes of respiratory signals associated with different daily activities as well as various symptoms of flu, without requiring any direct contact with the individual.

Knot Architecture for Biocompatible and Semiconducting 2D Electronic Fiber Transistors

Wearable devices have generally been rigid due to their reliance on silicon-based technologies, while future wearables will utilize flexible components for example transistors within microprocessors to manage data. Two-dimensional (2D) semiconducting flakes have yet to be investigated in fiber transistors but can offer a route toward high-mobility, biocompatible, and flexible fiber-based devices. Here, the electrochemical exfoliation of semiconducting 2D flakes of tungsten diselenide (WSe2) and molybdenum disulfide (MoS2) is shown to achieve homogeneous coatings onto the surface of polyester fibers. The high aspect ratio (>100) of the flake yields aligned and conformal flake-to-flake junctions on polyester fibers enabling transistors with mobilities μ ≈1 cm2 V-1 s-1 and a current on/off ratio, Ion/Ioff ≈102-104. Furthermore, the cytotoxic effects of the MoS2 and WSe2 flakes with human keratinocyte cells are investigated and found to be biocompatible. As an additional step, a unique transistor 'knot' architecture is created by leveraging the fiber diameter to establish the length of the transistor channel, facilitating a route to scale down transistor channel dimensions (≈100 µm) and utilize it to make a MoS2 fiber transistor with a human hair that achieves mobilities as high as μ ≈15 cm2 V-1 s-1.

Mechanical Properties of Conducting Printed Nanosheet Network Thin Films Under Uniaxial Compression

Thin film networks of solution processed nanosheets show remarkable promise for use in a broad range of applications including strain sensors, energy storage, printed devices, textile electronics, and more. While it is known that their electronic properties rely heavily on their morphology, little is known of their mechanical nature, a glaring omission given the effect mechanical deformation has on the morphology of porous systems and the promise of mechanical post processing for tailored properties. Here, this work employs a recent advance in thin film mechanical testing called the Layer Compression Test to perform the first in situ analysis of printed nanosheet network compression. Due to the well-defined deformation geometry of this unique test, this work is able to explore the out-of-plane elastic, plastic, and creep deformation in these systems, extracting properties of elastic modulus, plastic yield, viscoelasticity, tensile failure and sheet bending vs. slippage under both out of plane uniaxial compression and tension. This work characterizes these for a range of networks of differing porosities and sheet sizes, for low and high compression, as well as the effect of chemical cross linking. This work explores graphene and MoS2 networks, from which the results can be extended to printed nanosheet networks as a whole.

Printed MoSe2/GaAs Photodetector Enabling Ultrafast and Broadband Photodetection up to 1.5 μm

The development of high-performance and low-cost photodetectors (PDs) capable of detecting a broad range of wavelengths, from ultraviolet (UV) to near-infrared (NIR), is crucial for applications in sensing, imaging, and communication systems. This work presents a novel approach for printing a broadband PD based on a heterostructure of two-dimensional (2D) molybdenum diselenide (MoSe2) and gallium arsenide (GaAs). The fabrication process involves a precise technique to print MoSe2 nanoflower (NF) ink onto a prepatterned GaAs substrate. The resulting heterostructure exhibits unique properties, leveraging the exceptional electronic and optical characteristics of both GaAs and 2D MoSe2. The fabricated PD achieves an astounding on-off ratio of ∼105 at 5 V bias while demonstrating an exceptional on-off ratio of ∼104 at 0 V. The depletion region between GaAs and MoSe2 facilitates efficient charge generation and separation and collection of photogenerated carriers. This significantly improves the performance of the PD, resulting in a notably high responsivity across the spectrum. The peak responsivity of the device is 5.25 A/W at 5 V bias under 808 nm laser excitation, which is more than an order of magnitude higher than that of any commercial NIR PDs. Furthermore, the device demonstrates an exceptional responsivity of 0.36 A/W under an external bias of 0 V. The printing technology used here offers several advantages including simplicity, scalability, and compatibility with large-scale production. Additionally, it enables precise control over the placement and integration of the MoSe2 NF onto the GaAs substrate, ensuring uniformity and reliability in device performance. The exceptional responsivity across a broad spectral range (360-1550 nm) and the success of the printing technique make our MoSe2/GaAs heterostructure PD promising for future low-cost and efficient optoelectronic devices.

Advances in Smart Photovoltaic Textiles

Energy harvesting textiles have emerged as a promising solution to sustainably power wearable electronics. Textile-based solar cells (SCs) interconnected with on-body electronics have emerged to meet such needs. These technologies are lightweight, flexible, and easy to transport while leveraging the abundant natural sunlight in an eco-friendly way. In this Review, we comprehensively explore the working mechanisms, diverse types, and advanced fabrication strategies of photovoltaic textiles. Furthermore, we provide a detailed analysis of the recent progress made in various types of photovoltaic textiles, emphasizing their electrochemical performance. The focal point of this review centers on smart photovoltaic textiles for wearable electronic applications. Finally, we offer insights and perspectives on potential solutions to overcome the existing limitations of textile-based photovoltaics to promote their industrial commercialization.

Well-defined in-textile photolithography towards permeable textile electronics

Textile-based wearable electronics have attracted intensive research interest due to their excellent flexibility and breathability inherent in the unique three-dimensional porous structures. However, one of the challenges lies in achieving highly conductive patterns with high precision and robustness without sacrificing the wearing comfort. Herein, we developed a universal and robust in-textile photolithography strategy for precise and uniform metal patterning on porous textile architectures. The as-fabricated metal patterns realized a high precision of sub-100 µm with desirable mechanical stability, washability, and permeability. Moreover, such controllable coating permeated inside the textile scaffold contributes to the significant performance enhancement of miniaturized devices and electronics integration through both sides of the textiles. As a proof-of-concept, a fully integrated in-textiles system for multiplexed sweat sensing was demonstrated. The proposed method opens up new possibilities for constructing multifunctional textile-based flexible electronics with reliable performance and wearing comfort.

2D Materials in Flexible Electronics: Recent Advances and Future Prospectives

Flexible electronics have recently gained considerable attention due to their potential to provide new and innovative solutions to a wide range of challenges in various electronic fields. These electronics require specific material properties and performance because they need to be integrated into a variety of surfaces or folded and rolled for newly formatted electronics. Two-dimensional (2D) materials have emerged as promising candidates for flexible electronics due to their unique mechanical, electrical, and optical properties, as well as their compatibility with other materials, enabling the creation of various flexible electronic devices. This article provides a comprehensive review of the progress made in developing flexible electronic devices using 2D materials. In addition, it highlights the key aspects of materials, scalable material production, and device fabrication processes for flexible applications, along with important examples of demonstrations that achieved breakthroughs in various flexible and wearable electronic applications. Finally, we discuss the opportunities, current challenges, potential solutions, and future investigative directions about this field.

Quantitative analysis of printed nanostructured networks using high-resolution 3D FIB-SEM nanotomography

Networks of solution-processed nanomaterials are becoming increasingly important across applications in electronics, sensing and energy storage/generation. Although the physical properties of these devices are often completely dominated by network morphology, the network structure itself remains difficult to interrogate. Here, we utilise focused ion beam - scanning electron microscopy nanotomography (FIB-SEM-NT) to quantitatively characterise the morphology of printed nanostructured networks and their devices using nanometre-resolution 3D images. The influence of nanosheet/nanowire size on network structure in printed films of graphene, WS2 and silver nanosheets (AgNSs), as well as networks of silver nanowires (AgNWs), is investigated. We present a comprehensive toolkit to extract morphological characteristics including network porosity, tortuosity, specific surface area, pore dimensions and nanosheet orientation, which we link to network resistivity. By extending this technique to interrogate the structure and interfaces within printed vertical heterostacks, we demonstrate the potential of this technique for device characterisation and optimisation.

Two-Dimensional Van Der Waals Thin Film and Device

In the rapidly evolving field of thin-film electronics, the emergence of large-area flexible and wearable devices has been a significant milestone. Although organic semiconductor thin films, which can be manufactured through solution processing, have been identified, their utility is often undermined by their poor stability and low carrier mobility under ambient conditions. However, inorganic nanomaterials can be solution-processed and demonstrate outstanding intrinsic properties and structural stability. In particular, a series of two-dimensional (2D) nanosheet/nanoparticle materials have been shown to form stable colloids in their respective solvents. However, the integration of these 2D nanomaterials into continuous large-area thin with precise control of layer thickness and lattice orientation still remains a significant challenge. This review paper undertakes a detailed analysis of van der Waals thin films, derived from 2D materials, in the advancement of thin-film electronics and optoelectronic devices. The superior intrinsic properties and structural stability of inorganic nanomaterials are highlighted, which can be solution-processed and underscor the importance of solution-based processing, establishing it as a cornerstone strategy for scalable electronic and optoelectronic applications. A comprehensive exploration of the challenges and opportunities associated with the utilization of 2D materials for the next generation of thin-film electronics and optoelectronic devices is presented.

Large area inkjet-printed OLED fabrication with solution-processed TADF ink

This work demonstrates successful large area inkjet printing of a thermally activated delayed fluorescence (TADF) material as the emitting layer of organic light-emitting diodes (OLEDs). TADF materials enable efficient light emission without relying on heavy metals such as platinum or iridium. However, low-cost manufacturing of large-scale TADF OLEDs has been restricted due to their incompatibility with solution processing techniques. In this study, we develop ink formulation for a TADF material and show successful ink jet printing of intricate patterns over a large area (6400 mm2) without the use of any lithography. The stable ink is successfully achieved using a non-chlorinated binary solvent mixture for a solution processable TADF material, 3-(9,9-dimethylacridin-10(9H)-yl)-9H-xanthen-9-one dispersed in 4,4'-bis-(N-carbazolyl)-1,1'-biphenyl host. Using this ink, large area ink jet printed OLEDs with performance comparable to the control spin coated OLEDs are successfully achieved. In this work, we also show the impact of ink viscosity, density, and surface tension on the droplet formation and film quality as well as its potential for large-area roll-to-roll printing on a flexible substrate. The results represent a major step towards the use of TADF materials for large-area OLEDs without employing any lithography.

Sequential Laser-Burned Lignin and Hydrogen Evolution-Assisted Copper Electrodeposition to Manufacture Wearable Electronics

In the contemporary world, wearable electronics and smart textiles/fabrics are galvanizing a transformation of the health care, aerospace, military, and commercial industries. However, a major challenge that exists is the manufacture of electronic circuits directly on fabrics. In this work, we addressed the issue by developing a sequential manufacturing process. First, the target fabric was coated with a customized ink containing lignin. Next, a desired circuit layout was patterned by laser burning lignin, converting it to carbon and establishing a conductive template on the fabric. At last, using an in-house-designed printer, a devised localized hydrogen evolution-assisted (HEA) copper electroplating method was applied to metalize the surface of the laser-burned lignin pattern to achieve a very low resistive circuit layout (0.103 Ω for a 1 cm long interconnect). The nanostructure and material composition of the different layers were investigated via scanning electron microscopy, energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy, and Fourier-transform infrared spectroscopy (FTIR). Monitoring the conductivity change before and after bending, rolling, stretching, washing, and adhesion tests presented remarkable mechanical stability due to the entanglement of the copper nanostructure to the fibers of the fabric. Furthermore, the HEA method was used to solder a light-emitting diode to a patterned circuit on the fabric by growing copper at the terminals, creating interconnects. The presented sequential printing method has the potential for fabricating reliable wearable electronics for various applications, particularly in medical monitoring.

Progress and prospects in flexible tactile sensors

Flexible tactile sensors have the advantages of large deformation detection, high fault tolerance, and excellent conformability, which enable conformal integration onto the complex surface of human skin for long-term bio-signal monitoring. The breakthrough of flexible tactile sensors rather than conventional tactile sensors greatly expanded application scenarios. Flexible tactile sensors are applied in fields including not only intelligent wearable devices for gaming but also electronic skins, disease diagnosis devices, health monitoring devices, intelligent neck pillows, and intelligent massage devices in the medical field; intelligent bracelets and metaverse gloves in the consumer field; as well as even brain-computer interfaces. Therefore, it is necessary to provide an overview of the current technological level and future development of flexible tactile sensors to ease and expedite their deployment and to make the critical transition from the laboratory to the market. This paper discusses the materials and preparation technologies of flexible tactile sensors, summarizing various applications in human signal monitoring, robotic tactile sensing, and human-machine interaction. Finally, the current challenges on flexible tactile sensors are also briefly discussed, providing some prospects for future directions.

Solution-Processed Heterojunction Photodiodes Based on WSe2 Nanosheet Networks

Solution-processed photodetectors incorporating liquid-phase-exfoliated transition metal dichalcogenide nanosheets are widely reported. However, previous studies mainly focus on the fabrication of photoconductors, rather than photodiodes which tend to be based on heterojunctions and are harder to fabricate. Especially, there are rare reports on introducing commonly used transport layers into heterojunctions based on nanosheet networks. In this study, a reliable solution-processing method is reported to fabricate heterojunction diodes with tungsten selenide (WSe2 ) nanosheets as the optical absorbing material and PEDOT: PSS and ZnO as injection/transport-layer materials. By varying the transport layer combinations, the obtained heterojunctions show rectification ratios of up to ≈104 at ±1 V in the dark, without relying on heavily doped silicon substrates. Upon illumination, the heterojunction can be operated in both photoconductor and photodiode modes and displays self-powered behaviors at zero bias.

Field-effect transistors engineered via solution-based layer-by-layer nanoarchitectonics

The layer-by-layer (LbL) technique has been proven to be one of the most versatile approaches in order to fabricate functional nanofilms. The use of simple and inexpensive procedures as well as the possibility to incorporate a very wide range of materials through different interactions have driven its application in a wide range of fields. On the other hand, field-effect transistors (FETs) are certainly among the most important elements in electronics. The ability to modulate the flowing current between a source and a drain electrode via the voltage applied to the gate electrode endow these devices to switch or amplify electronic signals, being vital in all of our everyday electronic devices. In this topical review, we highlight different research efforts to engineer field-effect transistors using the LbL assembly approach. We firstly discuss on the engineering of the channel material of transistors via the LbL technique. Next, the deposition of dielectric materials through this approach is reviewed, allowing the development of high-performance electronic components. Finally, the application of the LbL approach to fabricate FETs-based biosensing devices is also discussed, as well as the improvement of the transistor's interfacial sensitivity by the engineering of the semiconductor with polyelectrolyte multilayers.

Electrochemical molecular intercalation and exfoliation of solution-processable two-dimensional crystals

Electrochemical molecular intercalation of layered semiconducting crystals with organic cations followed by ultrasonic exfoliation has proven to be an effective approach to producing a rich family of organic/inorganic hybrid superlattices and high-quality, solution-processable 2D semiconductors. A traditional method for exfoliating 2D crystals relies on the intercalation of inorganic alkali metal cations. The organic cations (e.g., alkyl chain-substituted quaternary ammonium cations) are much larger than their inorganic counterparts, and the bulky molecular structure endows distinct intercalation and exfoliation chemistry, as well as molecular tunability. By using this protocol, many layered 2D crystals (including graphene, black phosphorus and versatile metal chalcogenides) can be electrochemically intercalated with organic quaternary alkylammonium cations. Subsequent solution-phase exfoliation of the intercalated compounds is realized by regular bath sonication for a short period (5-30 min) to produce free-standing, thin 2D nanosheets. It is also possible to graft additional ligands on the nanosheet surface. The thickness of the exfoliated nanosheets can be measured by using atomic force microscopy and Raman spectroscopy. Modifying the chemical structure and geometrical configuration of alkylammonium cations results in different exfoliation behavior and a family of versatile organic/inorganic hybrid superlattices with tunable physical/chemical properties. The whole protocol takes ~6 h for the successful production of stable, ultrathin 2D nanosheet dispersion in solution and another 11 h for depositing thin films and transferring them onto an arbitrary surface. This protocol does not require expertise beyond basic electrochemistry knowledge and conventional colloidal nanocrystal synthesis and processing.

Chiro-Optoelectronic Encodable Multilevel Thin Film Electronic Elements with Active Bio-Organic Electrolyte Layer

It is suggested that chiral photonic bio-enabled integrated thin-film electronic elements can pave the base for next-generation optoelectronic processing, including quantum coding for encryption as well as integrated multi-level logic circuits. Despite recent advances, thin-film electronics for encryption applications with large-scale reconfigurable and multi-valued logic systems are not reported to date. Herein, highly secure optoelectronic encryption logic elements are demonstrated by facilitating the humidity-sensitive helicoidal organization of chiral nematic phases of cellulose nanocrystals (CNCs) as an active electrolyte layer combined with printed organic semiconducting channels. The ionic-strength controlled tunable photonic band gap facilitates distinguishable and quantized 13-bit electric signals triggered by repetitive changes of humidity, voltage, and the polarization state of the incident light. As a proof-of-concept, the integrated circuits responding to circularly polarized light and humidity are demonstrated as unique physically unclonable functional devices with high-level logic rarely achieved. The convergence between functional nanomaterials and the multi-valued logic thin-film electronic elements can provide optoelectronic counterfeiting, imaging, and information processing with multilevel logic nodes.

MXene Contact Engineering for Printed Electronics

MXenes emerging as an amazing class of 2D layered materials, have drawn great attention in the past decade. Recent progress suggest that MXene-based materials have been widely explored as conductive electrodes for printed electronics, including electronic and optoelectronic devices, sensors, and energy storage systems. Here, the critical factors impacting device performance are comprehensively interpreted from the viewpoint of contact engineering, thereby giving a deep understanding of surface microstructures, contact defects, and energy level matching as well as their interaction principles. This review also summarizes the existing challenges of MXene inks and the related printing techniques, aiming at inspiring researchers to develop novel large-area and high-resolution printing integration methods. Moreover, to effectually tune the states of contact interface and meet the urgent demands of printed electronics, the significance of MXene contact engineering in reducing defects, matching energy levels, and regulating performance is highlighted. Finally, the printed electronics constructed by the collaborative combination of the printing process and contact engineering are discussed.

Liquid-precursor-intermediated synthesis of atomically thin transition metal dichalcogenides

With the rapid development of integrated electronics and optoelectronics, methods for the scalable industrial-scale growth of two-dimensional (2D) transition metal dichalcogenide (TMD) materials have become a hot research topic. However, the control of gas distribution of solid precursors in common chemical vapor deposition (CVD) is still a challenge, resulting in the growth of 2D TMDs strongly influenced by the location of the substrate from the precursor powder. In contrast, liquid-precursor-intermediated growth not only avoids the use of solid powders but also enables the uniform distribution of precursors on the substrate through spin-coating, which is much more favorable for the synthesis of wafer-scale TMDs. Moreover, the spin-coating process based on liquid precursors can control the thickness of the spin-coated films by regulating the solution concentration and spin-coating speed. Herein, this review focuses on the recent progress in the synthesis of 2D TMDs based on liquid-precursor-intermediated CVD (LPI-CVD) growth. Firstly, the different assisted treatments based on LPI-CVD strategies for monolayer 2D TMDs are introduced. Then, the progress in the regulation of the different physical properties of monolayer 2D TMDs by substitution of the transition metal and their corresponding heterostructures based on LPI-CVD growth are summarized. Finally, the challenges and perspectives of 2D TMDs based on the LPI-CVD method are discussed.

Recent advances in inkjet-printing technologies for flexible/wearable electronics

The rapid development of flexible/wearable electronics requires novel fabricating strategies. Among the state-of-the-art techniques, inkjet printing has aroused considerable interest due to the possibility of large-scale fabricating flexible electronic devices with good reliability, high time efficiency, a low manufacturing cost, and so on. In this review, based on the working principle, recent advances in the inkjet printing technology in the field of flexible/wearable electronics are summarized, including flexible supercapacitors, transistors, sensors, thermoelectric generators, wearable fabric, and for radio frequency identification. In addition, some current challenges and future opportunities in this area are also addressed. We hope this review article can give positive suggestions to the researchers in the area of flexible electronics.

Water-based 2-dimensional anatase TiO2 inks for printed diodes and transistors

2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO₂ nanosheets (TiO₂-NS), produced by a mass scalable bottom-up approach. We formulate the TiO₂-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO₂-NS as a dielectric for printed electronics.

High-Mobility Flexible Transistors with Low-Temperature Solution-Processed Tungsten Dichalcogenides

The investigation of high-mobility two-dimensional (2D) flakes beyond molybdenum disulfide (MoS₂) will be necessary to create a library of high-mobility solution-processed networks that conform to substrates and remain functional over thousands of bending cycles. Here we report electrochemical exfoliation of large-aspect-ratio (>100) semiconducting flakes of tungsten diselenide (WSe₂) and tungsten disulfide (WS₂) as well as MoS₂ as a comparison. We use Langmuir-Schaefer coating to achieve highly aligned and conformal flake networks, with minimal mesoporosity (∼2-5%), at low processing temperatures (120 °C) and without acid treatments. This allows us to fabricate electrochemical transistors in ambient air, achieving average mobilities of μ_MoS2 ≈ 11 cm² V^-1 s^-1, μ_WS2 ≈ 9 cm² V^-1 s^-1, and μ_WSe2 ≈ 2 cm² V^-1 s^-1 with a current on/off ratios of I_on/I_off ≈ 2.6 × 10³, 3.4 × 10³, and 4.2 × 10⁴ for MoS₂, WS₂, and WSe₂, respectively. Moreover, our transistors display threshold voltages near ∼0.4 V with subthreshold slopes as low as 182 mV/dec, which are essential factors in maintaining power efficiency and represent a 1 order of magnitude improvement in the state of the art. Furthermore, the performance of our WSe₂ transistors is maintained on polyethylene terephthalate (PET) even after 1000 bending cycles at 1% strain.

Printed Electronics Based on 2D Material Inks: Preparation, Properties, and Applications toward Memristors

Printed electronics, which fabricate electrical components and circuits on various substrates by leveraging functional inks and advanced printing technologies, have recently attracted tremendous attention due to their capability of large-scale, high-speed, and cost-effective manufacturing and also their great potential in flexible and wearable devices. To further achieve multifunctional, practical, and commercial applications, various printing technologies toward smarter pattern-design, higher resolution, greater production flexibility, and novel ink formulations toward multi-functionalities and high quality have been insensitively investigated. 2D materials, possessing atomically thin thickness, unique properties and excellent solution-processable ability, hold great potential for high-quality inks. Besides, the great variety of 2D materials ranging from metals, semiconductors to insulators offers great freedom to formulate versatile inks to construct various printed electronics. Here, a detailed review of the progress on 2D material inks formulation and its printed applications has been provided, specifically with an emphasis on emerging printed memristors. Finally, the challenges facing the field and prospects of 2D material inks and printed electronics are discussed.

Large-Scale Ultra-Robust MoS2 Patterns Directly Synthesized on Polymer Substrate for Flexible Sensing Electronics

Synthesis of large-area patterned MoS₂ is considered the principle base for realizing high-performance MoS₂ -based flexible electronic devices. Patterning and transferring MoS₂ films to target flexible substrates, however, require conventional multi-step photolithography patterning and transferring process, despite tremendous progress in the facilitation of practical applications. Herein, an approach to directly synthesize large-scale MoS₂ patterns that combines inkjet printing and thermal annealing is reported. An optimal precursor ink is prepared that can deposit arbitrary patterns on polyimide films. By introducing a gas atmosphere of argon/hydrogen (Ar/H₂ ), thermal treatment at 350 °C enables an in situ decomposition and crystallization in the patterned precursors and, consequently, results in the formation of MoS₂ . Without complicated processes, patterned MoS₂ is obtained directly on polymer substrate, exhibiting superior mechanical flexibility and durability (≈2% variation in resistance over 10,000 bending cycles), as well as excellent chemical stability, which is attributed to the generated continuous and thin microstructures, as well as their strong adhesion with the substrate. As a step further, this approach is employed to manufacture various flexible sensing devices that are insensitive to body motions and moisture, including temperature sensors and biopotential sensing systems for real-time, continuously monitoring skin temperature, electrocardiography, and electromyography signals.

Graphene FETs with high and low mobilities have universal temperature-dependent properties

We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity,ρ, on gate voltage,V_g, for a series of monolayer graphene field effect transistors with mobilities,μ, ranging between 5000 and 250 000 cm²V^-1s^-1at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relationμ=4/eδnmaxfor all devices, whereρmaxis the resistivity maximum at the neutrality point andδnis an 'uncertainty' in the bipolar carrier density, given by the full width at half maximum of the resistivity peak expressed in terms of carrier density,n. This relation is consistent with thermal broadening of the carrier distribution and the presence of the disordered potential landscape consisting of so-called electron-hole puddles near the Dirac point. To demonstrate its utility, we combine this relation with temperature-dependent linearised Boltzmann transport calculations that include the effect of optical phonon scattering. This approach demonstrates the similarity in the temperature-dependent behaviour of carriers in different types of single layer graphene transistors with widely differing carrier mobilities. It can also account for the relative stability, over a wide temperature range, of the measured carrier mobility of each device.

A new high capacity cathode material for Li/Na-ion batteries: dihafnium sulfide (Hf2S)

Structural and electronic properties of the newly synthesized dihafnium sulfide (Hf₂S) monolayer were investigated in this study. The Hf₂S monolayer is a magnetic metal and it retains its metallicity despite external factors, such as tensile/compressive strain or various atom terminations. This robust metallic Hf₂S monolayer has a high storage capacity of 1377.7 mA h g^-1 for both Li and Na atoms, which is much higher than conventional battery electrodes. The minimum diffusion barrier value is 131 meV for Li, and 117 meV for Na. The average open-circuit voltage values of Li and Na were calculated as 2.37 V and 1.69 V, respectively. Investigation of the mechanical properties showed that it is softer than graphene due to the Young's modulus of 111.7 N m^-1, but comparable with the molybdenum disulfide (MoS₂) monolayer. In light of the results of this study, the Hf₂S monolayer can serve as a useful cathode material for Li-ion and Na-ion batteries. In addition, the interactions of the Hf₂S monolayer with aluminium nitride (AlN) and MoS₂ monolayers were presented. While AlN behaves like a substrate for the Hf₂S monolayer, the MoS₂ monolayer forms a heterostructure with the Hf₂S monolayer. This study is a guide for the Hf₂S monolayer and its functions in nanotechnology.

Flexible high-performance microcapacitors enabled by all-printed two-dimensional nanosheets

Chemically exfoliated nanosheets have exhibited great potential for applications in various electronic devices. Solution-based processing strategies such as inkjet printing provide a low-cost, environmentally friendly, and scalable route for the fabrication of flexible devices based on functional inks of two-dimensional nanosheets. In this study, chemically exfoliated high-k perovskite nanosheets (i.e., Ca₂Nb₃O₁₀ and Ca₂NaNb₄O₁₃) are well dispersed in appropriate solvents to prepare printable inks, and then, a series of microcapacitors with Ag and graphene electrodes are printed. The resulting microcapacitors, Ag/Ca₂Nb₃O₁₀/Ag, graphene/Ca₂Nb₃O₁₀/graphene, and graphene/Ca₂NaNb₄O₁₃/graphene, demonstrate high capacitance densities of 20, 80, and 150 nF/cm² and high dielectric constants of 26, 110, and 200, respectively. Such dielectric enhancement in the microcapacitors with graphene electrodes is possibly attributed to the dielectric/graphene interface. In addition, these microcapacitors also exhibit good insulating performance with a moderate electrical breakdown strength of approximately 1 MV/cm, excellent flexibility, and thermal stability up to 200 ℃. This work demonstrates the potential of high-k perovskite nanosheets for additive manufacturing of flexible high-performance dielectric capacitors.

Toward Sustainable Wearable Electronic Textiles

Smart wearable electronic textiles (e-textiles) that can detect and differentiate multiple stimuli, while also collecting and storing the diverse array of data signals using highly innovative, multifunctional, and intelligent garments, are of great value for personalized healthcare applications. However, material performance and sustainability, complicated and difficult e-textile fabrication methods, and their limited end-of-life processability are major challenges to wide adoption of e-textiles. In this review, we explore the potential for sustainable materials, manufacturing techniques, and their end-of-the-life processes for developing eco-friendly e-textiles. In addition, we survey the current state-of-the-art for sustainable fibers and electronic materials (i.e., conductors, semiconductors, and dielectrics) to serve as different components in wearable e-textiles and then provide an overview of environmentally friendly digital manufacturing techniques for such textiles which involve less or no water utilization, combined with a reduction in both material waste and energy consumption. Furthermore, standardized parameters for evaluating the sustainability of e-textiles are established, such as life cycle analysis, biodegradability, and recyclability. Finally, we discuss the current development trends, as well as the future research directions for wearable e-textiles which include an integrated product design approach based on the use of eco-friendly materials, the development of sustainable manufacturing processes, and an effective end-of-the-life strategy to manufacture next generation smart and sustainable wearable e-textiles that can be either recycled to value-added products or decomposed in the landfill without any negative environmental impacts.

Etch and Print: Graphene-Based Diodes for Silicon Technology

The graphene-silicon junction is one of the simplest conceivable interfaces in graphene-integrated semiconductor technology that can lead to the development of future generation of electronic and optoelectronic devices. However, graphene's integration is currently expensive and time-consuming and shows several challenges in terms of large-scale device fabrication, effectively preventing the possibility of implementing this technology into industrial processes. Here, we show a simple and cost-effective fabrication technique, based on inkjet printing, for the realization of printed graphene-silicon rectifying devices. The printed graphene-silicon diodes show an ON/OFF ratio higher than 3 orders of magnitude and a significant photovoltaic effect, resulting in a fill factor of ∼40% and a photocurrent efficiency of ∼2%, making the devices suitable for both electronic and optoelectronic applications. Finally, we demonstrate large-area pixeled photodetectors and compatibility with back-end-of-line fabrication processes.

Interface Capture Effect Printing Atomic-Thick 2D Semiconductor Thin Films

2D semiconductor crystals offer the opportunity to further extend Moore's law to the atomic scale. For practical and low-cost electronic applications, directly printing devices on substrates is advantageous compared to conventional microfabrication techniques that utilize expensive photolithography, etching, and vacuum-metallization processes. However, the currently printed 2D transistors are plagued by unsatisfactory electrical performance, thick semiconductor layers, and low device density. Herein, a facile and scalable 2D semiconductor printing strategy is demonstrated utilizing the interface capture effect and hyperdispersed 2D nanosheet ink to fabricate high-quality and atomic-thick semiconductor thin-film arrays without additional surfactants. Printed robust thin-film transistors using 2D semiconductors (e.g., MoS₂ ) and 2D conductive electrodes (e.g., graphene) exhibit high electrical performance, including a carrier mobility of up to 6.7 cm² V^-1 s^-1 and an on/off ratio of 2 × 10⁶ at 25 °C. As a proof of concept, 2D transistors are printed with a density of ≈47 000 devices per square centimeter. In addition, this method can be applied to many other 2D materials, such as NbSe₂ , Bi₂ Se₃ , and black phosphorus, for printing diverse high-quality thin films. Thus, the strategy of printable 2D thin-film transistors provides a scalable pathway for the facile manufacturing of high-performance electronics at an affordable cost.

Thermoelectric Silver-Based Chalcogenides

Heat is abundantly available from various sources including solar irradiation, geothermal energy, industrial processes, automobile exhausts, and from the human body and other living beings. However, these heat sources are often overlooked despite their abundance, and their potential applications remain underdeveloped. In recent years, important progress has been made in the development of high-performance thermoelectric materials, which have been extensively studied at medium and high temperatures, but less so at near room temperature. Silver-based chalcogenides have gained much attention as near room temperature thermoelectric materials, and they are anticipated to catalyze tremendous growth in energy harvesting for advancing internet of things appliances, self-powered wearable medical systems, and self-powered wearable intelligent devices. This review encompasses the recent advancements of thermoelectric silver-based chalcogenides including binary and multinary compounds, as well as their hybrids and composites. Emphasis is placed on strategic approaches which improve the value of the figure of merit for better thermoelectric performance at near room temperature via engineering material size, shape, composition, bandgap, etc. This review also describes the potential of thermoelectric materials for applications including self-powering wearable devices created by different approaches. Lastly, the underlying challenges and perspectives on the future development of thermoelectric materials are discussed.

Defect-Free Metal Deposition on 2D Materials via Inkjet Printing Technology

2D materials have many outstanding properties that make them attractive for the fabrication of electronic devices, such as high conductivity, flexibility, and transparency. However, integrating 2D materials in commercial devices and circuits is challenging because their structure and properties can be damaged during the fabrication process. Recent studies have demonstrated that standard metal deposition techniques (like electron beam evaporation and sputtering) significantly damage the atomic structure of 2D materials. Here it is shown that the deposition of metal via inkjet printing technology does not produce any observable damage in the atomic structure of ultrathin 2D materials, and it can keep a sharp interface. These conclusions are supported by abundant data obtained via atomistic simulations, transmission electron microscopy, nanochemical metrology, and device characterization in a probe station. The results are important for the understanding of inkjet printing technology applied to 2D materials, and they could contribute to the better design and optimization of electronic devices and circuits.

A Comprehensive Review on Printed Electronics: A Technology Drift towards a Sustainable Future

Printable electronics is emerging as one of the fast-growing engineering fields with a higher degree of customization and reliability. Ironically, sustainable printing technology is essential because of the minimal waste to the environment. To move forward, we need to harness the fabrication technology with the potential to support traditional process. In this review, we have systematically discussed in detail the various manufacturing materials and processing technologies. The selection criteria for the assessment are conducted systematically on the manuscript published in the last 10 years (2012-2022) in peer-reviewed journals. We have discussed the various kinds of printable ink which are used for fabrication based on nanoparticles, nanosheets, nanowires, molecular formulation, and resin. The printing methods and technologies used for printing for each technology are also reviewed in detail. Despite the major development in printing technology some critical challenges needed to be addressed and critically assessed. One such challenge is the coffee ring effect, the possible methods to reduce the effect on modulating the ink environmental condition are also indicated. Finally, a summary of printable electronics for various applications across the diverse industrial manufacturing sector is presented.

Improving the conductivity of graphite-based films by rapid laser annealing

We present a method to anneal devices based on graphite films on paper and polycarbonate substrates. The devices are created using four different methods: spray-on films, graphite pencil-drawn films, liquid-phase exfoliated graphite films, and graphite powder abrasion-applied films. We characterize the optical properties of the films before and after laser annealing and report the two-terminal resistance of the devices for increased laser power density. We find the greatest improvement (16× reduction) in the resistance of spray-on film devices starting from 25.0 kΩ and reaching 1.6 kΩ at the highest annealing power densities. These improvements are attributed to local laser ablation of binders, stabilizers, and solvent residues left in the film after fabrication. This work highlights the utility of focused laser annealing for spray-on, drawn, printed, and abrasion fabricated films on substrates sensitive to heat/thermal treatments.

Inkjet printing of two-dimensional van der Waals materials: a new route towards emerging electronic device applications

Two-dimensional (2D) van der Waals (vdW) materials are considered one of the most promising candidates to realize emerging electrical applications. Although until recently, much effort has been dedicated to demonstrating high-performance single 2D vdW devices, associated with rapid progress in 2D vdW materials, demands for their large-scale practical applications have noticeably increased from a manufacturing perspective. Drop-on-demand inkjet printing can be the most feasible solution by exploiting the advantages of layered 2D contacts and advanced 2D vdW ink formulations. This review presents recent achievements in inkjet-printed 2D vdW material-based device applications. A brief introduction to 2D vdW materials and inkjet printing principles, followed by various ink formulation methods, is first presented. Then, the state-of-the-art inkjet-printed 2D vdW device applications and their remaining technical issues are highlighted. Finally, prospects and challenges to be overcome to demonstrate fully inkjet-printed, high-performance 2D vdW devices are also discussed.

Low-Temperature Soldering of Surface Mount Devices on Screen-Printed Silver Tracks on Fabrics for Flexible Textile Hybrid Electronics

The combination of flexible-printed substrates and conventional electronics leads to flexible hybrid electronics. When fabrics are used as flexible substrates, two kinds of problems arise. The first type is related to the printing of the tracks of the corresponding circuit. The second one concerns the incorporation of conventional electronic devices, such as integrated circuits, on the textile substrate. Regarding the printing of tracks, this work studies the optimal design parameters of screen-printed silver tracks on textiles focused on printing an electronic circuit on a textile substrate. Several patterns of different widths and gaps between tracks were tested in order to find the best design parameters for some footprint configurations. With respect to the incorporation of devices on textile substrates, the paper analyzes the soldering of surface mount devices on fabric substrates. Due to the substrate's nature, low soldering temperatures must be used to avoid deformations or damage to the substrate caused by the higher temperatures used in conventional soldering. Several solder pastes used for low-temperature soldering are analyzed in terms of joint resistance and shear force application. The results obtained are satisfactory, demonstrating the viability of using flexible hybrid electronics with fabrics. As a practical result, a simple single-layer circuit was implemented to check the results of the research.

Synthesis of Group VIII Magnetic Transition-Metal-Doped Monolayer MoSe2

The limitation on the spintronic applications of van der Waals layered transition-metal dichalcogenide semiconductors is ascribed to the intrinsic nonmagnetic feature. Recent studies have proved that substitutional doping is an effective route to alter the magnetic properties of two-dimensional transition-metal dichalcogenides (TMDs). However, highly valid and repeatable substitutional doping of TMDs remains to be developed. Herein, we report group VIII magnetic transition metal-doped molybdenum diselenide (MoSe₂) single crystals via a one-pot mixed-salt-intermediated chemical vapor deposition method with high controllability and reproducibility. The high-angle annular dark-field scanning transmission electron microscopy studies further confirm that the sites of Fe are indeed substitutionally incorporated into the MoSe₂ monolayer. The Fe-doped MoSe₂ monolayer with a concentration from 0.93% to 6.10% could be obtained by controlling the ratios of FeCl₃/Na₂MoO₄. Moreover, this strategy can be extended to create Co(Ni)-doped MoSe₂ monolayers. The magnetic hysteresis (M-H) measurements demonstrate that group VIII magnetic transition-metal-doped MoSe₂ samples exhibit room-temperature ferromagnetism. Additionally, the Fe-doped MoSe₂ field effect transistor shows n-type semiconductor characteristics, indicating the obtainment of a room-temperature dilute magnetic semiconductor. Our approach is universal in magnetic transition-metal substitutional doping of TMDs, and it inspires further research interest in the study of related spintronic and magnetoelectric applications.

End-to-end design of wearable sensors

Wearable devices provide an alternative pathway to clinical diagnostics by exploiting various physical, chemical and biological sensors to mine physiological (biophysical and/or biochemical) information in real time (preferably, continuously) and in a non-invasive or minimally invasive manner. These sensors can be worn in the form of glasses, jewellery, face masks, wristwatches, fitness bands, tattoo-like devices, bandages or other patches, and textiles. Wearables such as smartwatches have already proved their capability for the early detection and monitoring of the progression and treatment of various diseases, such as COVID-19 and Parkinson disease, through biophysical signals. Next-generation wearable sensors that enable the multimodal and/or multiplexed measurement of physical parameters and biochemical markers in real time and continuously could be a transformative technology for diagnostics, allowing for high-resolution and time-resolved historical recording of the health status of an individual. In this Review, we examine the building blocks of such wearable sensors, including the substrate materials, sensing mechanisms, power modules and decision-making units, by reflecting on the recent developments in the materials, engineering and data science of these components. Finally, we synthesize current trends in the field to provide predictions for the future trajectory of wearable sensors.

Unencapsulated and washable two-dimensional material electronic-textile for NO2 sensing in ambient air

Materials adopted in electronic gas sensors, such as chemiresistive-based NO₂ sensors, for integration in clothing fail to survive standard wash cycles due to the combined effect of aggressive chemicals in washing liquids and mechanical abrasion. Device failure can be mitigated by using encapsulation materials, which, however, reduces the sensor performance in terms of sensitivity, selectivity, and therefore utility. A highly sensitive NO₂ electronic textile (e-textile) sensor was fabricated on Nylon fabric, which is resistant to standard washing cycles, by coating Graphene Oxide (GO), and GO/Molybdenum disulfide (GO/MoS₂) and carrying out in situ reduction of the GO to Reduced Graphene Oxide (RGO). The GO/MoS₂ e-textile was selective to NO₂ and showed sensitivity to 20 ppb NO₂ in dry air (0.05%/ppb) and 100 ppb NO₂ in humid air (60% RH) with a limit of detection (LOD) of ~ 7.3 ppb. The selectivity and low LOD is achieved with the sensor operating at ambient temperatures (~ 20 °C). The sensor maintained its functionality after undergoing 100 cycles of standardised washing with no encapsulation. The relationship between temperature, humidity and sensor response was investigated. The e-textile sensor was embedded with a microcontroller system, enabling wireless transmission of the measurement data to a mobile phone. These results show the potential for integrating air quality sensors on washable clothing for high spatial resolution (< 25 cm²)—on-body personal exposure monitoring.

Printable inks and deformable electronic array devices

Deformable printed electronic array devices are expected to revolutionize next-generation electronics. However, although remarkable technological advances in printable inks and deformable electronic array devices have recently been achieved, technical challenges remain to commercialize these technologies. In this review article a brief introduction to printing methods highlighting significant research studies on ink formation for conductors, semiconductors, and insulators is provided, and the structural design and successful printing strategies of deformable electronic array devices are described. Successful device demonstrations are presented in the applications of passive- and active-matrix array devices. Finally, perspectives and technological challenges to be achieved are pointed out to print practically available deformable devices.

Graphene: Hexagonal Boron Nitride Composite Films with Low-Resistance for Flexible Electronics

The structure and electric properties of hexagonal boron nitride (h-BN):graphene composite with additives of the conductive polymer PEDOT:PSS and ethylene glycol were examined. The graphene and h-BN flakes synthesized in plasma with nanometer sizes were used for experiments. It was found that the addition of more than 10-3 mass% of PEDOT:PSS to the graphene suspension or h-BN:graphene composite in combination with ethylene glycol leads to a strong decrease (4-5 orders of magnitude, in our case) in the resistance of the films created from these suspensions. This is caused by an increase in the conductivity of PEDOT:PSS due to the interaction with ethylene glycol and synergetic effect on the composite properties of h-BN:graphene films. The addition of PEDOT:PSS to the h-BN:graphene composite leads to the correction of the bonds between nanoparticles and a weak change in the resistance under the tensile strain caused by the sample bending. A more pronounced flexibility of the composite films with tree components is demonstrated. The self-organization effects for graphene flakes and polar h-BN flakes lead to the formation of micrometer sized plates in drops and uniform-in-size nanoparticles in inks. The ratio of the components in the composite was found for the observed strong hysteresis and a negative differential resistance. Generally, PEDOT:PSS and ethylene glycol composite films are promising for their application as electrodes or active elements for logic and signal processing.

A Fully Solution-Printed Photosynaptic Transistor Array with Ultralow Energy Consumption for Artificial-Vision Neural Networks

Photosynaptic organic field-effect transistors (OFETs) represent a viable pathway to develop bionic optoelectronics. However, the high operating voltage and current of traditional photosynaptic OFETs lead to huge energy consumption greater than that of the real biological synapses, hindering their further development in new-generation visual prosthetics and artificial perception systems. Here, a fully solution-printed photosynaptic OFET (FSP-OFET) with substantial energy consumption reduction is reported, where a source Schottky barrier is introduced to regulate charge-carrier injection, and which operates with a fundamentally different mechanism from traditional devices. The FSP-OFET not only significantly lowers the working voltage and current but also provides extraordinary neuromorphic light-perception capabilities. Consequently, the FSP-OFET successfully emulates visual nervous responses to external light stimuli with ultralow energy consumption of 0.07-34 fJ per spike in short-term plasticity and 0.41-19.87 fJ per spike in long-term plasticity, both approaching the energy efficiency of biological synapses (1-100 fJ). Moreover, an artificial optic-neural network made from an 8 × 8 FSP-OFET array on a flexible substrate shows excellent image recognition and reinforcement abilities at a low energy cost. The designed FSP-OFET offers an opportunity to realize photonic neuromorphic functionality with extremely low energy consumption dissipation.

Gamma Irradiation and Ag and ZnO Nanoparticles Combined Treatment of Cotton Textile Materials

In this work, cotton textile materials were impregnated by immersion with three different nanocomposites: Ag/chitosan, Ag/polyvinylpyrrolidone, and ZnO/polyvinylpyrrolidone and irradiated with a ⁶⁰Co gamma source. After the nanoparticles impregnation, the cotton materials were irradiated in a dry and wet state at 5 and 20 kGy radiation doses. The following methods were used for the characterization of the obtained cotton materials to reveal the modification of the textile materials: Fourier transform infrared-attenuated total reflection spectroscopy (FTIR-ATR) and thermogravimetry (TG). The obtained materials have good antibacterial properties. The microbiological tests have shown the best material results for the gamma irradition and Ag nanoparticles combined treatment. The objective was to create a more environmentally friendly approach for textile functionalization by eliminating toxic chemicals-based technology and replacing it with the eco-friendlier gamma technology.

Design of a Compact Dual-Band Textile Antenna Based on Metasurface

This paper presents a compact textile antenna design based on a metasurface for wearable applications. It operates in the 2.45 GHz and 5.5 GHz industrial, scientific, and medical bands. A two-dimensional equivalent circuit model is proposed to provide insight into the working principle of the metasurface. The tuning of the radiator's resonant frequencies can be easily performed by adjusting the dispersion curve of the metasurface unit cell. The metasurface in this work consists of a 4 × 4 array of unit cells fed by a printed coplanar waveguide structure with a slot in its reverse side to maintain its low profile structure. The main innovations of this work are: (i) the -2^nd mode is employed to significantly miniaturize the antenna dimensions; (ii) the simultaneous excitation of the +1^st mode to enable dual-band operation; (iii) an integrated back reflector to reduce back radiation and lower SAR; and (iv) the use of full textile materials to guarantee user comfort, ease of fabrication and low cost. The proposed antenna's footprint is 44.1 × 44.1 mm² (0.12 λ² at 2.45 GHz), with an impedance bandwidth of 10.2% centered at 2.45 GHz and 22.5% at 5.5 GHz. The maximum gain is -0.67 dBi and 7.4 dBi in free space, and 9% of power gain attenuation is generated when used on the body, and is suitable as a miniaturized antenna for wearable applications.

Slot Antennas Integrated into 3D Knitted Fabrics: 5.8 GHz and 24 GHz ISM Bands

In the paper, a 3D knitted fabric is used for the design of a circularly polarized textile-integrated antenna. The role of the radiating element is played by a circular slot etched into the conductive top wall of a textile-integrated waveguide. Inside the circular slot, a cross slot rotated for about 45° is etched to excite the circular polarization. The polarization of the antenna can be changed by the rotation of the cross slot. The antenna has a patch-like radiation pattern, and the gain is about 5.3 dBi. The textile-integrated feeder of the antenna is manufactured by screen printing conductive surfaces and sewing side walls with conductive threads. The antenna was developed for ISM bands 5.8 GHz and 24 GHz. The operation frequency 24 GHz is the highest frequency of operation for which the textile-integrated waveguide antenna has been manufactured.

Recent Advances on Tuning the Interlayer Coupling and Properties in van der Waals Heterostructures

2D van der Waals (vdW) heterostructures are receiving increasing research attention due to the theoretically amazing properties and unprecedented application potential. However, the as-synthesized heterostructures are generally underperforming due to the weak interlayer coupling, which inspires the researchers to find ways to modulate the interlayer coupling and properties, realizing the tailored performance for actual applications. There have been a lot of publications regarding the controllable regulation of the structures and properties of 2D vdW heterostructures in the past few years, while a review work summarizing the current advances is not yet available, though it is significant. This paper conducts a state-of-the-art review regarding the current research progress of performance modulation of vdW heterostructures by different techniques. First, the general synthesis methods of vdW heterostructures are summarized. Then, different performance modulation techniques, that is, mechanical-based, external fields-assisted, and particle beam irradiation-based methods, are discussed and compared in detail. Some of the newly proposed concepts are described. Thereafter, applications of vdW heterostructures with tailored properties are reviewed for the application prospects of the topic around this area. Moreover, the future research challenges and prospects are discussed, aiming at triggering more research interest and device applications around this topic.

Highly Conductive Networks of Silver Nanosheets

Although printed networks of semiconducting nanosheets have found success in a range of applications, conductive nanosheet networks are limited by low conductivities (<10⁶ S m^-1 ). Here, dispersions of silver nanosheets (AgNS) that can be printed into highly conductive networks are described. Using a commercial thermal inkjet printer, AgNS patterns with unannealed conductivities of up to (6.0 ± 1.1) × 10⁶  S m^-1 are printed. These networks can form electromagnetic interference shields with record shielding effectiveness of >60 dB in the microwave region at thicknesses <200 nm. High resolution patterns with line widths down to 10 µm are also printed using an aerosol-jet printer which, when annealed at 200 °C, display conductivity >10⁷  S m^-1 . Unlike conventional Ag-nanoparticle inks, the 2D geometry of AgNS yields smooth, short-free interfaces between electrode and active layer when used as the top electrode in vertical nanosheet heterostructures. This shows that all-printed vertical heterostructures of AgNS/WS₂ /AgNS, where the top electrode is a mesh grid, function as photodetectors demonstrating that such structures can be used in optoelectronic applications that usually require transparent conductors.

Recent progress of fiber-based transistors: materials, structures and applications

Wearable electronics on fibers or fabrics assembled with electronic functions provide a platform for sensors, displays, circuitry, and computation. These new conceptual devices are human-friendly and programmable, which makes them indispensable for modern electronics. Their unique properties such as being adaptable in daily life, as well as being lightweight and flexible, have enabled many promising applications in robotics, healthcare, and the Internet of Things (IoT). Transistors, one of the fundamental blocks in electronic systems, allow for signal processing and computing. Therefore, study leading to integration of transistors with fabrics has become intensive. Here, several aspects of fiber-based transistors are addressed, including materials, system structures, and their functional devices such as sensory, logical circuitry, memory devices as well as neuromorphic computation. Recently reported advances in development and challenges to realizing fully integrated electronic textile (e-textile) systems are also discussed.

Graphene-Oxide-Based Fluoro- and Chromo-Genic Materials and Their Applications

Composite materials and their applications constitute a hot field of research nowadays due to the fact that they comprise a combination of the unique properties of each component of which they consist. Very often, they exhibit better performance and properties compared to their combined building blocks. Graphene oxide (GO), as the most widely used derivative of graphene, has attracted widespread attention because of its excellent properties. Abundant oxygen-containing functional groups on GO can provide various reactive sites for chemical modification or functionalization of GO, which in turn can be used to develop novel GO-based composites. This review outlines the most recent advances in the field of novel dyes and pigments encompassing GO as a key ingredient or as an important cofactor. The interactions of graphene with other materials/compounds are highlighted. The special structure and unique properties of GO have a great effect on the performance of fabricated hybrid dyes and pigments by enhancing the color performance of dyes, the anticorrosion properties of pigments, the viscosity and rheology of inks, etc., which further expands the applications of dyes and pigments in dyeing, optical elements, solar-thermal energy storage, sensing, coatings, and microelectronics devices. Finally, challenges in the current development as well as the future prospects of GO-based dyes and pigments are also discussed. This review provides a reference for the further exploration of novel dyes and pigments.

Barium titanate-enhanced hexagonal boron nitride inks for printable high-performance dielectrics

Printed electronics have been attracting significant interest for their potential to enable flexible and wearable electronic applications. Together with printable semiconductors, solution-processed dielectric inks are key in enabling low-power and high-performance printed electronics. In the quest for suitable dielectrics inks, two-dimensional materials such as hexagonal boron nitride (h-BN) have emerged in the form of printable dielectrics. In this work, we report barium titanate (BaTiO₃) nanoparticles as an effective additive for inkjet-printable h-BN inks. The resulting inkjet printed BaTiO₃/h-BN thin films reach a dielectric constant (ε_r) of ∼16 by adding 10% of BaTiO₃nanoparticles (in their volume fraction to the exfoliated h-BN flakes) in water-based inks. This result enabled all-inkjet printed flexible capacitors withC ∼ 10.39 nF cm^-2, paving the way to future low power, printed and flexible electronics.