1
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Cheng WN, Niu M, Meng Y, Han X, Qiao J, Zhang J, Zhao X. Engineering Charge Density Waves by Stackingtronics in Tantalum Disulfide. NANO LETTERS 2024; 24:6441-6449. [PMID: 38757836 DOI: 10.1021/acs.nanolett.4c01771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/18/2024]
Abstract
In the realm of condensed matter physics and materials science, charge density waves (CDWs) have emerged as a captivating way to modulate correlated electronic phases and electron oscillations in quantum materials. However, collectively and efficiently tuning CDW order is a formidable challenge. Herein, we introduced a novel way to modulate the CDW order in 1T-TaS2 via stacking engineering. By introducing shear strain during the electrochemical exfoliation, the thermodynamically stable AA-stacked TaS2 consecutively transform into metastable ABC stacking, resulting in unique 3a × 1a CDW order. By decoupling atom coordinates, we atomically deciphered the 3D subtle structural variations in trilayer samples. As suggested by density functional theory (DFT) calculations, the origin of CDWs is presumably due to collective excitations and charge modulation. Therefore, our works shed light on a new avenue to collectively modulate the CDW order via stackingtronics and unveiled novel mechanisms for triggering CDW formation via charge modulation.
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Affiliation(s)
- Wing Ni Cheng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Mengmeng Niu
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Yuan Meng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jingsi Qiao
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices & Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing 100081, China
| | - Jin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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2
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Yang H, Lee B, Bang J, Kim S, Wulferding D, Lee SH, Cho D. Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2401348. [PMID: 38728592 DOI: 10.1002/advs.202401348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Revised: 04/30/2024] [Indexed: 05/12/2024]
Abstract
Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1T-TaS2 are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott-insulating domains undergo a transition to band-insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1T-TaS2, providing a new perspective for investigating emergent quantum phenomena in layered CDW materials.
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Affiliation(s)
- Hyungryul Yang
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Byeongin Lee
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Junho Bang
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
| | - Sunghun Kim
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
| | - Dirk Wulferding
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, 08826, Republic of Korea
- Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea
| | - Sung-Hoon Lee
- Department of Applied Physics, Kyung Hee University, Yongin, 17104, Republic of Korea
| | - Doohee Cho
- Department of Physics, Yonsei University, Seoul, 03722, Republic of Korea
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3
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Chi Z, Lee S, Yang H, Dolan E, Safeer CK, Ingla-Aynés J, Herling F, Ontoso N, Martín-García B, Gobbi M, Low T, Hueso LE, Casanova F. Control of Charge-Spin Interconversion in van der Waals Heterostructures with Chiral Charge Density Waves. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310768. [PMID: 38237911 DOI: 10.1002/adma.202310768] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Revised: 12/10/2023] [Indexed: 01/28/2024]
Abstract
A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long-range ordered pattern in low-dimensional materials. Although the understanding of the fundamental character of CDW is enriched after extensive studies, its practical application remains limited. Here, an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS2 van der Waals heterostructures is shown by manipulating the distinct CDW phases in 1T-TaS2. Whereas CSI from spins polarized in all three directions is observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears, and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains in the heterostructure are at the origin of the switching of CSI. The results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.
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Affiliation(s)
- Zhendong Chi
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Seungjun Lee
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Eoin Dolan
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - C K Safeer
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
- Department of Physics, Clarendon Laboratory, University of Oxford, Oxford, OX1 3PU, UK
| | - Josep Ingla-Aynés
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Franz Herling
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Nerea Ontoso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Basque Country, Spain
- Centro de Física de Materiales (CSIC-EHU/UPV) and Materials Physics Center (MPC), Donostia-San Sebastián, 20018, Basque Country, Spain
| | - Tony Low
- Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA
- Department of Physics, University of Minnesota, Minneapolis, MN, 55455, USA
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, 20018, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, 48009, Basque Country, Spain
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4
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Wang Y, Li Z, Luo X, Gao J, Han Y, Jiang J, Tang J, Ju H, Li T, Lv R, Cui S, Yang Y, Sun Y, Zhu J, Gao X, Lu W, Sun Z, Xu H, Xiong Y, Cao L. Dualistic insulator states in 1T-TaS 2 crystals. Nat Commun 2024; 15:3425. [PMID: 38653984 DOI: 10.1038/s41467-024-47728-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2023] [Accepted: 04/09/2024] [Indexed: 04/25/2024] Open
Abstract
While the monolayer sheet is well-established as a Mott-insulator with a finite energy gap, the insulating nature of bulk 1T-TaS2 crystals remains ambiguous due to their varying dimensionalities and alterable interlayer coupling. In this study, we present a unique approach to unlock the intertwined two-dimensional Mott-insulator and three-dimensional band-insulator states in bulk 1T-TaS2 crystals by structuring a laddering stack along the out-of-plane direction. Through modulating the interlayer coupling, the insulating nature can be switched between band-insulator and Mott-insulator mechanisms. Our findings demonstrate the duality of insulating nature in 1T-TaS2 crystals. By manipulating the translational degree of freedom in layered crystals, our discovery presents a promising strategy for exploring fascinating physics, independent of their dimensionality, thereby offering a "three-dimensional" control for the era of slidetronics.
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Affiliation(s)
- Yihao Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Zhihao Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Yuyan Han
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jialiang Jiang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
| | - Jin Tang
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China
| | - Huanxin Ju
- PHI Analytical Laboratory, ULVAC-PHI Instruments Co., Ltd., Nanjing, 211110, Jiangsu, P. R. China
| | - Tongrui Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Run Lv
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Shengtao Cui
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yingguo Yang
- State Key Laboratory of Photovoltaic Science and Technology, School of Microelectronics, Fudan University, Shanghai, 200433, P. R. China
| | - Yuping Sun
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Junfa Zhu
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xingyu Gao
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Laboratory, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 239 Zhangheng Road, Shanghai, 201204, P. R. China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
| | - Zhe Sun
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, 230026, P. R. China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, Jilin, 130033, P. R. China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
| | - Yimin Xiong
- Department of Physics, School of Physics and Optoelectronics Engineering, Anhui University, Hefei, 230601, P. R. China.
- Hefei National Laboratory, Hefei, 230028, P. R. China.
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China.
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5
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Hwang J, Ruan W, Chen Y, Tang S, Crommie MF, Shen ZX, Mo SK. Charge density waves in two-dimensional transition metal dichalcogenides. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2024; 87:044502. [PMID: 38518359 DOI: 10.1088/1361-6633/ad36d3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Accepted: 03/22/2024] [Indexed: 03/24/2024]
Abstract
Charge density wave (CDW is one of the most ubiquitous electronic orders in quantum materials. While the essential ingredients of CDW order have been extensively studied, a comprehensive microscopic understanding is yet to be reached. Recent research efforts on the CDW phenomena in two-dimensional (2D) materials provide a new pathway toward a deeper understanding of its complexity. This review provides an overview of the CDW orders in 2D with atomically thin transition metal dichalcogenides (TMDCs) as the materials platform. We mainly focus on the electronic structure investigations on the epitaxially grown TMDC samples with angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy as complementary experimental tools. We discuss the possible origins of the 2D CDW, novel quantum states coexisting with them, and exotic types of charge orders that can only be realized in the 2D limit.
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Affiliation(s)
- Jinwoong Hwang
- Department of Physics and Institute of Quantum Convergence Technology, Kangwon National University, Chuncheon 24341, Republic of Korea
| | - Wei Ruan
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200438, People's Republic of China
| | - Yi Chen
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, People's Republic of China
| | - Shujie Tang
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, People's Republic of China
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, CA, United States of America
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, United States of America
- Kavli Energy NanoSciences Institute at the University of California at Berkeley, Berkeley, CA 94720, United States of America
| | - Zhi-Xun Shen
- Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, CA, United States of America
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025, United States of America
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720 United States of America
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6
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Zhang Y, Zhang S, Jia M, Wang T, Guan L, Tao J. Prediction of intrinsic room-temperature ferromagnetism in two-dimensional CrInX 2 (X = S, Se, Te) monolayers. Phys Chem Chem Phys 2024; 26:8183-8194. [PMID: 38380595 DOI: 10.1039/d3cp06010a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Herein, using density functional theory, novel two-dimensional (2D) CrInX2 (X = S, Se, Te) structures are predicted to be practical ferromagnetic (FM) semiconductors. Phonon vibrations and molecular dynamics simulations verified their structural and thermodynamic stability. Sizable fully spin-polarized band gaps of 1.03 and 0.69 eV are found for CrInS2 and CrInSe2, while CrInTe2 exhibits half-metallic band nature (at 0 K with a perfect lattice). The high magnetic anisotropy energies are responsible for their long-range spin polarization. The Curie temperatures (Tc) are estimated to be 347, 397 and 447 K for CrInS2, CrInSe2 and CrInTe2, respectively, all well above the room-temperature. The high Tc originates from unusual FM direct exchange, the efficient super-exchange coupling between neighboring Cr eg-orbitals with zero virtual exchange gaps and the presence of dual Cr-X-Cr super-exchange channels. Our systematic study of the CrInX2 monolayer suggests that it could be a promising material for spintronics applications.
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Affiliation(s)
- Yunfei Zhang
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
| | - Shuo Zhang
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
| | - Minghao Jia
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Tian Wang
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Lixiu Guan
- School of Sciences, Hebei University of Technology, Tianjin 300401, China.
| | - Junguang Tao
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
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7
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Bian Y, Chen X, Du S, Zhang Z, Hou J, Nie K, Guo Z, Dong H, Qiu Z, Chen N, Chen J. Revealing the Role of the Tetragonal Distortion in the Metal-Insulator Transition of Co- and Fe-Doped NiS. J Phys Chem Lett 2024; 15:1449-1454. [PMID: 38291988 DOI: 10.1021/acs.jpclett.3c03496] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2024]
Abstract
Although the NiS exhibits the most widely adjustable metal-to-insulator (MIT) properties among the chalcogenides, the mechanisms, with respect to the regulations in their critical temperatures (TMIT), are yet unclear. Herein, we demonstrate the overlooked role associated with the structurally tetragonal distortion in elevating the TMIT of NiS; this is in distinct contrast to the previously expected hybridization and bandwidth regulations that usually reduces TMIT. Compared to the perspective of structure distortions, the orbital hybridization and band regulation of NiS are ∼19 times more effective adjustment in TMIT. As a result, the respective abruptions in both the electrical and thermal resistive switches across the TMIT of NiS can be better preserved in the low-temperature range (<273 K), shedding light on their optimum usage at cryogenic temperatures.
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Affiliation(s)
- Yi Bian
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Xing Chen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Shuyu Du
- School of Renewable Energy, North China Electric Power University, Beijing 102206, China
| | - Ziyou Zhang
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Jintao Hou
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
| | - Kaiqi Nie
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Zhiying Guo
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Hongliang Dong
- Center for High Pressure Science and Technology Advanced Research, Shanghai 201203, China
| | - Zhiyong Qiu
- School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Nuofu Chen
- School of Renewable Energy, North China Electric Power University, Beijing 102206, China
| | - Jikun Chen
- School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China
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8
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Wu S, Dai M, Li H, Li R, Han Z, Hu W, Zhao Z, Hou Y, Gou H, Zou R, Chen Y, Luo X, Zhao X. Atomically Unraveling Highly Crystalline Self-Intercalated Tantalum Sulfide with Correlated Stacking Registry-Dependent Magnetism. NANO LETTERS 2024; 24:378-385. [PMID: 38117785 DOI: 10.1021/acs.nanolett.3c04122] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
In self-intercalated two-dimensional (ic-2D) materials, understanding the local chemical environment and the topology of the filling site remains elusive, and the subsequent correlation with the macroscopically manifested physical properties has rarely been investigated. Herein, highly crystalline gram-scale ic-2D Ta1.33S2 crystals were successfully grown by the high-pressure high-temperature method. Employing combined atomic-resolution scanning transmission electron microscopy annular dark field imaging and density functional theory calculations, we systematically unveiled the atomic structures of an atlas of stacking registries in a well-defined √3(a) × √3(a) Ta1.33S2 superlattice. Ferromagnetic order was observed in the AC' stacking registry, and it evolves into an antiferromagnetic state in AA/AB/AB' stacking registries; the AA' stacking registry shows ferrimagnetic ordering. Therefore, we present a novel approach for fabricating large-scale highly crystalline ic-2D crystals and shed light on a powerful means of modulating the magnetic order of ic-2D systems via stacking engineering, i.e., stackingtronics.
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Affiliation(s)
- Shengqiang Wu
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Minzhi Dai
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Hang Li
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, China
| | - Runlai Li
- College of Polymer Science & Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu 610065, China
| | - Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China
| | - Wenchao Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zijing Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yanglong Hou
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, China
| | - Ruqiang Zou
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yongjin Chen
- Center for High Pressure Science and Technology Advanced Research, Beijing 100193, China
| | - Xin Luo
- Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou 510275, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
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9
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Yao Q, Park JW, Won C, Cheong S, Yeom HW. Kinkless Electronic Junction along 1D Electronic Channel Embedded in a Van Der Waals Layer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2307831. [PMID: 38059812 PMCID: PMC10797480 DOI: 10.1002/advs.202307831] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/18/2023] [Revised: 11/13/2023] [Indexed: 12/08/2023]
Abstract
Here, the formation of type-I and type-II electronic junctions with or without any structural discontinuity along a well-defined 1 nm-wide 1D electronic channel within a van der Waals layer is reported. Scanning tunneling microscopy and spectroscopy techniques are employed to investigate the atomic and electronic structure along peculiar domain walls formed on the charge-density-wave phase of 1T-TaS2 . Distinct kinds of abrupt electronic junctions with discontinuities of the band gap along the domain walls are found, some of which even do not have any structural kinks and defects. Density-functional calculations reveal a novel mechanism of the electronic junction formation; they are formed by a kinked domain wall in the layer underneath through substantial electronic interlayer coupling. This work demonstrates that the interlayer electronic coupling can be an effective control knob over nanometer-scale electronic property of 2D atomic monolayers.
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Affiliation(s)
- Qirong Yao
- Center for Artificial Low Dimensional Electronic SystemsInstitute for Basic Science (IBS)Pohang37673South Korea
| | - Jae Whan Park
- Center for Artificial Low Dimensional Electronic SystemsInstitute for Basic Science (IBS)Pohang37673South Korea
| | - Choongjae Won
- Laboratory for Pohang Emergent MaterialsDepartment of PhysicsPohang University of Science and TechnologyPohang37673South Korea
- Max Plank Pohang University of Science and Technology (POSTECH) Center for Complex Phase MaterialsPohang University of Science and TechnologyPohang37673South Korea
| | - Sang‐Wook Cheong
- Laboratory for Pohang Emergent MaterialsDepartment of PhysicsPohang University of Science and TechnologyPohang37673South Korea
- Max Plank Pohang University of Science and Technology (POSTECH) Center for Complex Phase MaterialsPohang University of Science and TechnologyPohang37673South Korea
- Rutgers Center for Emergent Materials and Department of Physics and AstronomyRutgers UniversityPiscatawayNJ08854‐8019USA
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic SystemsInstitute for Basic Science (IBS)Pohang37673South Korea
- Department of PhysicsPohang University of Science and TechnologyPohang37673South Korea
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10
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Maklar J, Sarkar J, Dong S, Gerasimenko YA, Pincelli T, Beaulieu S, Kirchmann PS, Sobota JA, Yang S, Leuenberger D, Moore RG, Shen ZX, Wolf M, Mihailovic D, Ernstorfer R, Rettig L. Coherent light control of a metastable hidden state. SCIENCE ADVANCES 2023; 9:eadi4661. [PMID: 38000022 PMCID: PMC10672165 DOI: 10.1126/sciadv.adi4661] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Accepted: 10/24/2023] [Indexed: 11/26/2023]
Abstract
Metastable phases present a promising route to expand the functionality of complex materials. Of particular interest are light-induced metastable phases that are inaccessible under equilibrium conditions, as they often host new, emergent properties switchable on ultrafast timescales. However, the processes governing the trajectories to such hidden phases remain largely unexplored. Here, using time- and angle-resolved photoemission spectroscopy, we investigate the ultrafast dynamics of the formation of a hidden quantum state in the layered dichalcogenide 1T-TaS2 upon photoexcitation. Our results reveal the nonthermal character of the transition governed by a collective charge-density-wave excitation. Using a double-pulse excitation of the structural mode, we show vibrational coherent control of the phase-transition efficiency. Our demonstration of exceptional control, switching speed, and stability of the hidden state are key for device applications at the nexus of electronics and photonics.
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Affiliation(s)
- Julian Maklar
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Jit Sarkar
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Shuo Dong
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Yaroslav A. Gerasimenko
- Department of Complex Matter, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
- Center of Excellence on Nanoscience and Nanotechnology – Nanocenter (CENN Nanocenter), Jamova 39, SI-1000 Ljubljana, Slovenia
| | - Tommaso Pincelli
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Samuel Beaulieu
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Patrick S. Kirchmann
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
| | - Jonathan A. Sobota
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
| | - Shuolong Yang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
- Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, CA 94305, USA
| | - Dominik Leuenberger
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
- Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, CA 94305, USA
| | - Robert G. Moore
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
| | - Zhi-Xun Shen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, CA 94025, USA
- Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, CA 94305, USA
| | - Martin Wolf
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
| | - Dragan Mihailovic
- Department of Complex Matter, Jožef Stefan Institute, Jamova 39, SI-1000 Ljubljana, Slovenia
- Center of Excellence on Nanoscience and Nanotechnology – Nanocenter (CENN Nanocenter), Jamova 39, SI-1000 Ljubljana, Slovenia
| | - Ralph Ernstorfer
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
- Institut für Optik und Atomare Physik, Technische Universität Berlin, Straße des 17. Juni 135, 10623 Berlin, Germany
| | - Laurenz Rettig
- Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, D-14195 Berlin, Germany
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11
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Maier P, Hourigan NJ, Ruckhofer A, Bremholm M, Tamtögl A. Surface properties of 1T-TaS 2 and contrasting its electron-phonon coupling with TlBiTe 2 from helium atom scattering. Front Chem 2023; 11:1249290. [PMID: 38033467 PMCID: PMC10687202 DOI: 10.3389/fchem.2023.1249290] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2023] [Accepted: 10/19/2023] [Indexed: 12/02/2023] Open
Abstract
We present a detailed helium atom scattering study of the charge-density wave (CDW) system and transition metal dichalcogenide 1T-TaS2. In terms of energy dissipation, we determine the electron-phonon (e-ph) coupling, a quantity that is at the heart of conventional superconductivity and may even "drive" phase transitions such as CDWs. The e-ph coupling of TaS2 in the commensurate CDW phase (λ = 0.59 ± 0.12) is compared with measurements of the topo-logical insulator TlBiTe2 (λ = 0.09 ± 0.01). Furthermore, by means of elastic He diffraction and resonance/interference effects in He scattering, the thermal expansion of the surface lattice, the surface step height, and the three-dimensional atom-surface interaction potential are determined including the electronic corrugation of 1T-TaS2. The linear thermal expansion coefficient is similar to that of other transition-metal dichalcogenides. The He-TaS2 interaction is best described by a corrugated Morse potential with a relatively large well depth and supports a large number of bound states, comparable to the surface of Bi2Se3, and the surface electronic corrugation of 1T-TaS2 is similar to the ones found for semimetal surfaces.
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Affiliation(s)
- Philipp Maier
- Institute of Experimental Physics, Graz University of Technology, Graz, Austria
| | - Noah. J. Hourigan
- Institute of Experimental Physics, Graz University of Technology, Graz, Austria
| | - Adrian Ruckhofer
- Institute of Experimental Physics, Graz University of Technology, Graz, Austria
| | - Martin Bremholm
- Department of Chemistry and iNANO, Aarhus University, Aarhus, Denmark
| | - Anton Tamtögl
- Institute of Experimental Physics, Graz University of Technology, Graz, Austria
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12
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Lei L, Dai J, Dong H, Geng Y, Cao F, Wang C, Xu R, Pang F, Liu ZX, Li F, Cheng Z, Wang G, Ji W. Electronic Janus lattice and kagome-like bands in coloring-triangular MoTe 2 monolayers. Nat Commun 2023; 14:6320. [PMID: 37813844 PMCID: PMC10562484 DOI: 10.1038/s41467-023-42044-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/14/2023] [Accepted: 09/28/2023] [Indexed: 10/11/2023] Open
Abstract
Polymorphic structures of transition metal dichalcogenides (TMDs) host exotic electronic states, like charge density wave and superconductivity. However, the number of these structures is limited by crystal symmetries, which poses a challenge to achieving tailored lattices and properties both theoretically and experimentally. Here, we report a coloring-triangle (CT) latticed MoTe2 monolayer, termed CT-MoTe2, constructed by controllably introducing uniform and ordered mirror-twin-boundaries into a pristine monolayer via molecular beam epitaxy. Low-temperature scanning tunneling microscopy and spectroscopy (STM/STS) together with theoretical calculations reveal that the monolayer has an electronic Janus lattice, i.e., an energy-dependent atomic-lattice and a Te pseudo-sublattice, and shares the identical geometry with the Mo5Te8 layer. Dirac-like and flat electronic bands inherently existing in the CT lattice are identified by two broad and two prominent peaks in STS spectra, respectively, and verified with density-functional-theory calculations. Two types of intrinsic domain boundaries were observed, one of which maintains the electronic-Janus-lattice feature, implying potential applications as an energy-tunable electron-tunneling barrier in future functional devices.
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Affiliation(s)
- Le Lei
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Jiaqi Dai
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Haoyu Dong
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Yanyan Geng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Feiyue Cao
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Rui Xu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Fei Pang
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Zheng-Xin Liu
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China
| | - Fangsen Li
- Vacuum Interconnected Nanotech Workstation, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215123, China
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, 230026, China
| | - Zhihai Cheng
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China.
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
| | - Guang Wang
- Department of Physics, College of Sciences, National University of Defense Technology, Changsha, 410073, China.
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China.
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, China.
- Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing, 100872, China.
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13
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Jarc G, Mathengattil SY, Montanaro A, Giusti F, Rigoni EM, Sergo R, Fassioli F, Winnerl S, Dal Zilio S, Mihailovic D, Prelovšek P, Eckstein M, Fausti D. Cavity-mediated thermal control of metal-to-insulator transition in 1T-TaS 2. Nature 2023; 622:487-492. [PMID: 37853152 DOI: 10.1038/s41586-023-06596-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/30/2022] [Accepted: 08/31/2023] [Indexed: 10/20/2023]
Abstract
Placing quantum materials into optical cavities provides a unique platform for controlling quantum cooperative properties of matter, by both weak and strong light-matter coupling1,2. Here we report experimental evidence of reversible cavity control of a metal-to-insulator phase transition in a correlated solid-state material. We embed the charge density wave material 1T-TaS2 into cryogenic tunable terahertz cavities3 and show that a switch between conductive and insulating behaviours, associated with a large change in the sample temperature, is obtained by mechanically tuning the distance between the cavity mirrors and their alignment. The large thermal modification observed is indicative of a Purcell-like scenario in which the spectral profile of the cavity modifies the energy exchange between the material and the external electromagnetic field. Our findings provide opportunities for controlling the thermodynamics and macroscopic transport properties of quantum materials by engineering their electromagnetic environment.
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Affiliation(s)
- Giacomo Jarc
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - Shahla Yasmin Mathengattil
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - Angela Montanaro
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy
- Elettra Sincrotrone Trieste, Trieste, Italy
- Department of Physics, University of Erlangen-Nürnberg, Erlangen, Germany
| | - Francesca Giusti
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - Enrico Maria Rigoni
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - Rudi Sergo
- Elettra Sincrotrone Trieste, Trieste, Italy
| | - Francesca Fassioli
- Department of Physics, University of Erlangen-Nürnberg, Erlangen, Germany
- International School for Advanced Studies (SISSA), Trieste, Italy
| | - Stephan Winnerl
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany
| | | | | | | | - Martin Eckstein
- Institute of Theoretical Physics, University of Hamburg, Hamburg, Germany
| | - Daniele Fausti
- Department of Physics, Università degli Studi di Trieste, Trieste, Italy.
- Elettra Sincrotrone Trieste, Trieste, Italy.
- Department of Physics, University of Erlangen-Nürnberg, Erlangen, Germany.
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14
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Lee SH, Cho D. Charge density wave surface reconstruction in a van der Waals layered material. Nat Commun 2023; 14:5735. [PMID: 37714842 PMCID: PMC10504333 DOI: 10.1038/s41467-023-41500-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2023] [Accepted: 09/01/2023] [Indexed: 09/17/2023] Open
Abstract
Surface reconstruction plays a vital role in determining the surface electronic structure and chemistry of semiconductors and metal oxides. However, it has been commonly believed that surface reconstruction does not occur in van der Waals layered materials, as they do not undergo significant bond breaking during surface formation. In this study, we present evidence that charge density wave (CDW) order in these materials can, in fact, cause CDW surface reconstruction through interlayer coupling. Using density functional theory calculations on the 1T-TaS2 surface, we reveal that CDW reconstruction, involving concerted small atomic displacements in the subsurface layer, results in a significant modification of the surface electronic structure, transforming it from a Mott insulator to a band insulator. This new form of surface reconstruction explains several previously unexplained observations on the 1T-TaS2 surface and has important implications for interpreting surface phenomena in CDW-ordered layered materials.
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Affiliation(s)
- Sung-Hoon Lee
- Department of Applied Physics, Kyung Hee University, Yongin, Republic of Korea.
| | - Doohee Cho
- Department of Physics, Yonsei University, Seoul, Republic of Korea.
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15
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Jung J, Jin KH, Kim J, Yeom HW. Control over a Wide Phase Diagram of 2D Correlated Electrons by Surface Doping; K/1 T-TaS 2. NANO LETTERS 2023; 23:8029-8034. [PMID: 37651727 DOI: 10.1021/acs.nanolett.3c02003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/02/2023]
Abstract
We demonstrate the systematic tuning of a trivial insulator into a Mott insulator and a Mott insulator into a correlated metallic and a pseudogap state, which emerge in a quasi-two-dimensional electronic system of 1T-TaS2 through strong electron correlation. The band structure evolution is investigated upon surface doping by alkali adsorbates for two distinct phases occurring at around 220 and 10 K by angle-resolved photoelectron spectroscopy. We find contrasting behaviors upon doping that corroborate the fundamental difference of two electronic states: while the antibonding state of the spin-singlet insulator at 10 K is partially occupied to produce an emerging Mott insulating state, the presumed Mott insulating state at 220 K evolves into a correlated metallic state and then a pseudogap state. The work indicates that surface doping onto correlated 2D materials can be a powerful tool to systematically engineer a wide range of correlated electronic phases.
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Affiliation(s)
- Jiwon Jung
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
| | - Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Jaeyoung Kim
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang 37673, Republic of Korea
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16
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Kim TJ, Jeong MY, Han MJ. First principles investigation of screened Coulomb interaction and electronic structure of low-temperature phase TaS 2. iScience 2023; 26:106681. [PMID: 37250339 PMCID: PMC10214477 DOI: 10.1016/j.isci.2023.106681] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/30/2022] [Revised: 03/28/2023] [Accepted: 04/12/2023] [Indexed: 05/31/2023] Open
Abstract
By means of ab initio computation schemes, we examine the electronic screening, Coulomb interaction strength, and the electronic structure of a quantum spin liquid candidate monolayer TaS2 in its low-temperature commensurate charge-density-wave phase. Not only local (U) but non-local (V) correlations are estimated within random phase approximation based on two different screening models. Using GW + EDMFT (GW plus extended dynamical mean-field theory) method, we investigate the detailed electronic structure by increasing the level of non-local approximation from DMFT (V=0) to EDMFT and GW + EDMFT.
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Affiliation(s)
- Taek Jung Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Min Yong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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17
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Barani Z, Geremew T, Stokey M, Sesing N, Taheri M, Hilfiker MJ, Kargar F, Schubert M, Salguero TT, Balandin AA. Quantum Composites with Charge-Density-Wave Fillers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209708. [PMID: 36812299 DOI: 10.1002/adma.202209708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 02/12/2023] [Indexed: 05/12/2023]
Abstract
A unique class of advanced materials-quantum composites based on polymers with fillers composed of a van der Waals quantum material that reveals multiple charge-density-wave quantum condensate phases-is demonstrated. Materials that exhibit quantum phenomena are typically crystalline, pure, and have few defects because disorder destroys the coherence of the electrons and phonons, leading to collapse of the quantum states. The macroscopic charge-density-wave phases of filler particles after multiple composite processing steps are successfully preserved in this work. The prepared composites display strong charge-density-wave phenomena even above room temperature. The dielectric constant experiences more than two orders of magnitude enhancement while the material maintains its electrically insulating properties, opening a venue for advanced applications in energy storage and electronics. The results present a conceptually different approach for engineering the properties of materials, extending the application domain for van der Waals materials.
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Affiliation(s)
- Zahra Barani
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Tekwam Geremew
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Megan Stokey
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Nicholas Sesing
- Department of Chemistry, University of Georgia, Athens, GA, 30602, USA
| | - Maedeh Taheri
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Matthew J Hilfiker
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Fariborz Kargar
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
| | - Mathias Schubert
- Department of Electrical and Computer Engineering, University of Nebraska, Lincoln, NE, 68588, USA
| | - Tina T Salguero
- Department of Chemistry, University of Georgia, Athens, GA, 30602, USA
| | - Alexander A Balandin
- Phonon Optimized Engineered Materials Center, Department of Electrical and Computer Engineering, University of California, Riverside, Riverside, CA, 92521, USA
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18
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Hou B, Zhang Y, Zhang T, Wu J, Zhang Q, Han X, Huang Z, Chen Y, Ji H, Wang T, Liu L, Si C, Gao HJ, Wang Y. Multiple Electronic Phases Coexisting under Inhomogeneous Strains in the Correlated Insulator. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2300789. [PMID: 37097711 DOI: 10.1002/advs.202300789] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/04/2023] [Revised: 04/05/2023] [Indexed: 06/19/2023]
Abstract
Monolayer transition metal dichalcogenides (TMDs) can host exotic phenomena such as correlated insulating and charge-density-wave (CDW) phases. Such properties are strongly dependent on the precise atomic arrangements. Strain, as an effective tuning parameter in atomic arrangements, has been widely used for tailoring material's structures and related properties, yet to date, a convincing demonstration of strain-induced dedicate phase transition at nanometer scale in monolayer TMDs has been lacking. Here, a strain engineering technique is developed to controllably introduce out-of-plane atomic deformations in monolayer CDW material 1T-NbSe2 . The scanning tunneling microscopy and spectroscopy (STM and STS) measurements, accompanied by first-principles calculations, demonstrate that the CDW phase of 1T-NbSe2 can survive under both tensile and compressive strains even up to 5%. Moreover, significant strain-induced phase transitions are observed, i.e., tensile (compressive) strains can drive 1T-NbSe2 from an intrinsic-correlated insulator into a band insulator (metal). Furthermore, experimental evidence of the multiple electronic phase coexistence at the nanoscale is provided. The results shed new lights on the strain engineering of correlated insulator and useful for design and development of strain-related nanodevices.
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Affiliation(s)
- Baofei Hou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
- Advanced Research Institute of Multidisciplinary Sciences, Beijing Institute of Technology, Beijing, 100081, China
| | - Teng Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Jizheng Wu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Han
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongyan Ji
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Tingting Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
| | - Chen Si
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
- Center for Integrated Computational Materials Engineering, International Research Institute for Multidisciplinary Science, Beihang University, Beijing, 100191, China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China
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19
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Sayers CJ, Cerullo G, Zhang Y, Sanders CE, Chapman RT, Wyatt AS, Chatterjee G, Springate E, Wolverson D, Da Como E, Carpene E. Exploring the Charge Density Wave Phase of 1T-TaSe_{2}: Mott or Charge-Transfer Gap? PHYSICAL REVIEW LETTERS 2023; 130:156401. [PMID: 37115877 DOI: 10.1103/physrevlett.130.156401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 12/29/2022] [Accepted: 03/02/2023] [Indexed: 06/19/2023]
Abstract
1T-TaSe_{2} is widely believed to host a Mott metal-insulator transition in the charge density wave (CDW) phase according to the spectroscopic observation of a band gap that extends across all momentum space. Previous investigations inferred that the occurrence of the Mott phase is limited to the surface only of bulk specimens, but recent analysis on thin samples revealed that the Mott-like behavior, observed in the monolayer, is rapidly suppressed with increasing thickness. Here, we report combined time- and angle-resolved photoemission spectroscopy and theoretical investigations of the electronic structure of 1T-TaSe_{2}. Our experimental results confirm the existence of a state above E_{F}, previously ascribed to the upper Hubbard band, and an overall band gap of ∼0.7 eV at Γ[over ¯]. However, supported by density functional theory calculations, we demonstrate that the origin of this state and the gap rests on band structure modifications induced by the CDW phase alone, without the need for Mott correlation effects.
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Affiliation(s)
- C J Sayers
- Dipartimento di Fisica, Politecnico di Milano, Milan 20133, Italy
| | - G Cerullo
- Dipartimento di Fisica, Politecnico di Milano, Milan 20133, Italy
| | - Y Zhang
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - C E Sanders
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - R T Chapman
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - A S Wyatt
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - G Chatterjee
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - E Springate
- STFC Central Laser Facility, Research Complex at Harwell, Harwell Campus, Didcot OX11 0QX, United Kingdom
| | - D Wolverson
- Centre for Nanoscience and Nanotechnology, Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - E Da Como
- Centre for Nanoscience and Nanotechnology, Department of Physics, University of Bath, Bath BA2 7AY, United Kingdom
| | - E Carpene
- IFN-CNR, Dipartimento di Fisica, Politecnico di Milano, Milan 20133, Italy
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20
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Lee J, Park JW, Cho GY, Yeom HW. Mobile Kink Solitons in a Van der Waals Charge-Density-Wave Layer. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300160. [PMID: 37058741 DOI: 10.1002/adma.202300160] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/06/2023] [Revised: 03/18/2023] [Indexed: 06/04/2023]
Abstract
Kinks, point-like geometrical defects along dislocations, domain walls, and DNA, are stable and mobile, as solutions of a sine-Gordon wave equation. While they are widely investigated for crystal deformations and domain wall motions, electronic properties of individual kinks have received little attention. In this work, electronically and topologically distinct kinks are discovered along electronic domain walls in a correlated van der Waals insulator of 1T-TaS2 . Mobile kinks and antikinks are identified as trapped by pinning defects and imaged in scanning tunneling microscopy. Their atomic structures and in-gap electronic states are unveiled, which are mapped approximately into Su-Schrieffer-Heeger solitons. The twelvefold degeneracy of the domain walls in the present system guarantees an extraordinarily large number of distinct kinks and antikinks to emerge. Such large degeneracy together with the robust geometrical nature may be useful for handling multilevel information in van der Waals materials architectures.
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Affiliation(s)
- Jinwon Lee
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
- Leiden Institute of Physics, Leiden University, 2333 CA, Leiden, The Netherlands
| | - Jae Whan Park
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
| | - Gil Young Cho
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), 37673, Pohang, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, 37673, Pohang, Republic of Korea
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21
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Cha S, Lee G, Lee S, Ryu SH, Sohn Y, An G, Kang C, Kim M, Kim K, Soon A, Kim KS. Order-disorder phase transition driven by interlayer sliding in lead iodides. Nat Commun 2023; 14:1981. [PMID: 37031234 PMCID: PMC10082779 DOI: 10.1038/s41467-023-37740-1] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/15/2022] [Accepted: 03/28/2023] [Indexed: 04/10/2023] Open
Abstract
A variety of phase transitions have been found in two-dimensional layered materials, but some of their atomic-scale mechanisms are hard to clearly understand. Here, we report the discovery of a phase transition whose mechanism is identified as interlayer sliding in lead iodides, a layered material widely used to synthesize lead halide perovskites. The low-temperature crystal structure of lead iodides is found not 2H polytype as known before, but non-centrosymmetric 4H polytype. This undergoes the order-disorder phase transition characterized by the abrupt spectral broadening of valence bands, taken by angle-resolved photoemission, at the critical temperature of 120 K. It is accompanied by drastic changes in simultaneously taken photocurrent and photoluminescence. The transmission electron microscopy is used to reveal that lead iodide layers stacked in the form of 4H polytype at low temperatures irregularly slide over each other above 120 K, which can be explained by the low energy barrier of only 10.6 meV/atom estimated by first principles calculations. Our findings suggest that interlayer sliding is a key mechanism of the phase transitions in layered materials, which can significantly affect optoelectronic and optical characteristics.
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Affiliation(s)
- Seyeong Cha
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Giyeok Lee
- Department of Materials Science and Engineering, Yonsei University, Seoul, Korea
| | - Sol Lee
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Sae Hee Ryu
- Advanced Light Source, E. O. Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Yeongsup Sohn
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Gijeong An
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Changmo Kang
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Minsu Kim
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Kwanpyo Kim
- Department of Physics, College of Science, Yonsei University, Seoul, Korea
| | - Aloysius Soon
- Department of Materials Science and Engineering, Yonsei University, Seoul, Korea.
| | - Keun Su Kim
- Department of Physics, College of Science, Yonsei University, Seoul, Korea.
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22
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Babar ZUD, Raza A, Cassinese A, Iannotti V. Two Dimensional Heterostructures for Optoelectronics: Current Status and Future Perspective. Molecules 2023; 28:molecules28052275. [PMID: 36903520 PMCID: PMC10005545 DOI: 10.3390/molecules28052275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Revised: 02/05/2023] [Accepted: 02/16/2023] [Indexed: 03/05/2023] Open
Abstract
Researchers have found various families of two-dimensional (2D) materials and associated heterostructures through detailed theoretical work and experimental efforts. Such primitive studies provide a framework to investigate novel physical/chemical characteristics and technological aspects from micro to nano and pico scale. Two-dimensional van der Waals (vdW) materials and their heterostructures can be obtained to enable high-frequency broadband through a sophisticated combination of stacking order, orientation, and interlayer interactions. These heterostructures have been the focus of much recent research due to their potential applications in optoelectronics. Growing the layers of one kind of 2D material over the other, controlling absorption spectra via external bias, and external doping proposes an additional degree of freedom to modulate the properties of such materials. This mini review focuses on current state-of-the-art material design, manufacturing techniques, and strategies to design novel heterostructures. In addition to a discussion of fabrication techniques, it includes a comprehensive analysis of the electrical and optical properties of vdW heterostructures (vdWHs), particularly emphasizing the energy-band alignment. In the following sections, we discuss specific optoelectronic devices, such as light-emitting diodes (LEDs), photovoltaics, acoustic cavities, and biomedical photodetectors. Furthermore, this also includes a discussion of four different 2D-based photodetector configurations according to their stacking order. Moreover, we discuss the challenges that remain to be addressed in order to realize the full potential of these materials for optoelectronics applications. Finally, as future perspectives, we present some key directions and express our subjective assessment of upcoming trends in the field.
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Affiliation(s)
- Zaheer Ud Din Babar
- Scuola Superiore Meridionale (SSM), University of Naples Federico II, Largo S. Marcellino 10, 80138 Naples, Italy
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Ali Raza
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
| | - Antonio Cassinese
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
| | - Vincenzo Iannotti
- Department of Physics “Ettore Pancini”, University of Naples Federico II, Piazzale Tecchio 80, 80125 Naples, Italy
- CNR–SPIN (Institute for Superconductors, Oxides and Other Innovative Materials and Devices), Piazzale V. Tecchio 80, 80125 Naples, Italy
- Correspondence:
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23
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Liu L, Song X, Dai J, Yang H, Chen Y, Huang X, Huang Z, Ji H, Zhang Y, Wu X, Sun JT, Zhang Q, Zhou J, Huang Y, Qiao J, Ji W, Gao HJ, Wang Y. Unveiling Electronic Behaviors in Heterochiral Charge-Density-Wave Twisted Stacking Materials with 1.25 nm Unit Dependence. ACS NANO 2023; 17:2702-2710. [PMID: 36661840 DOI: 10.1021/acsnano.2c10841] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Layered charge-density-wave (CDW) materials have gained increasing interest due to their CDW stacking-dependent electronic properties for practical applications. Among the large family of CDW materials, those with star of David (SOD) patterns are very important due to the potentials for quantum spin liquid and related device applications. However, the spatial extension and the spin coupling information down to the nanoscale remain elusive. Here, we report the study of heterochiral CDW stackings in bilayer (BL) NbSe2 with high spatial resolution. We reveal that there exist well-defined heterochiral stackings, which have inhomogeneous electronic states among neighboring CDW units (star of David, SOD), significantly different from the homogeneous electronic states in the homochiral stackings. Intriguingly, the different electronic behaviors are spatially localized within each SOD with a unit size of 1.25 nm, and the gap sizes are determined by the different types of SOD stackings. Density functional theory (DFT) calculations match the experimental measurements well and reveal the SOD-stacking-dependent correlated electronic states and antiferromagnetic/ferromagnetic couplings. Our findings give a deep understanding of the spatial distribution of interlayer stacking and the delicate modulation of the spintronic states, which is very helpful for CDW-based nanoelectronic devices.
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Affiliation(s)
- Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiaqi Dai
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xinyu Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Hongyan Ji
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yu Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Xu Wu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jia-Tao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jiadong Zhou
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Yuan Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Jingsi Qiao
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, People's Republic of China
| | - Hong-Jun Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, People's Republic of China
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24
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Chen G, Rösner M, Lado JL. Controlling magnetic frustration in 1T-TaS 2via Coulomb engineered long-range interactions. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:485805. [PMID: 36202090 DOI: 10.1088/1361-648x/ac9812] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/07/2022] [Accepted: 10/06/2022] [Indexed: 06/16/2023]
Abstract
Magnetic frustrations in two-dimensional materials provide a rich playground to engineer unconventional phenomena. However, despite intense efforts, a realization of tunable frustrated magnetic order in two-dimensional materials remains an open challenge. Here we propose Coulomb engineering as a versatile strategy to tailor magnetic ground states in layered materials. Using the frustrated van der Waals monolayer 1T-TaS2as an example, we show how long-range Coulomb interactions renormalize the low energy nearly flat band structure, leading to a Heisenberg model which depends on the Coulomb interactions. Based on this, we show that superexchange couplings in the material can be precisely tailored by means of environmental dielectric screening, ultimately allowing to externally drive the material towards a tunable frustrated regime. Our results put forward Coulomb engineering as a powerful tool to manipulate magnetic properties of van der Waals materials.
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Affiliation(s)
- Guangze Chen
- Department of Applied Physics, Aalto University, 02150 Espoo, Finland
| | - Malte Rösner
- Institute for Molecules and Materials, Radboud University, NL-6525 AJ Nijmegen, The Netherlands
| | - Jose L Lado
- Department of Applied Physics, Aalto University, 02150 Espoo, Finland
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25
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Yang HF, He KY, Koo J, Shen SW, Zhang SH, Liu G, Liu YZ, Chen C, Liang AJ, Huang K, Wang MX, Gao JJ, Luo X, Yang LX, Liu JP, Sun YP, Yan SC, Yan BH, Chen YL, Xi X, Liu ZK. Visualization of Chiral Electronic Structure and Anomalous Optical Response in a Material with Chiral Charge Density Waves. PHYSICAL REVIEW LETTERS 2022; 129:156401. [PMID: 36269973 DOI: 10.1103/physrevlett.129.156401] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 09/07/2022] [Indexed: 05/02/2023]
Abstract
Chiral materials have attracted significant research interests as they exhibit intriguing physical properties, such as chiral optical response, spin-momentum locking, and chiral induced spin selectivity. Recently, layered transition metal dichalcogenide 1T-TaS_{2} has been found to host a chiral charge density wave (CDW) order. Nevertheless, the physical consequences of the chiral order, for example, in electronic structures and the optical properties, are yet to be explored. Here, we report the spectroscopic visualization of an emergent chiral electronic band structure in the CDW phase, characterized by windmill-shaped Fermi surfaces. We uncover a remarkable chirality-dependent circularly polarized Raman response due to the salient in-plane chiral symmetry of CDW, although the ordinary circular dichroism vanishes. Chiral Fermi surfaces and anomalous Raman responses coincide with the CDW transition, proving their lattice origin. Our Letter paves a path to manipulate the chiral electronic and optical properties in two-dimensional materials and explore applications in polarization optics and spintronics.
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Affiliation(s)
- H F Yang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - K Y He
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
| | - J Koo
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - S W Shen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - S H Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - G Liu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
| | - Y Z Liu
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - C Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom
| | - A J Liang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
| | - K Huang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
| | - M X Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
| | - J J Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, HFIPS, Hefei 230031, People's Republic of China
| | - X Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, HFIPS, Hefei 230031, People's Republic of China
| | - L X Yang
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - J P Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
| | - Y P Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, HFIPS, Hefei 230031, People's Republic of China
- High Magnetic Field Laboratory, Chinese Academy of Sciences, HFIPS, Hefei, 230031, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - S C Yan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
| | - B H Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - Y L Chen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- Department of Physics, University of Oxford, Oxford, OX1 3PU, United Kingdom
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - X Xi
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
| | - Z K Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China
- ShanghaiTech Laboratory for Topological Physics, Shanghai 201210, People's Republic of China
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26
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Hwang J, Jin Y, Zhang C, Zhu T, Kim K, Zhong Y, Lee JE, Shen Z, Chen Y, Ruan W, Ryu H, Hwang C, Lee J, Crommie MF, Mo SK, Shen ZX. A Novel 19 $\sqrt {19} $ × 19 $\sqrt {19} $ Superstructure in Epitaxially Grown 1T-TaTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204579. [PMID: 35902365 DOI: 10.1002/adma.202204579] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
The spontaneous formation of electronic orders is a crucial element for understanding complex quantum states and engineering heterostructures in 2D materials. A novel 19 $\sqrt {19} $ × 19 $\sqrt {19} $ charge order in few-layer-thick 1T-TaTe2 transition metal dichalcogenide films grown by molecular beam epitaxy, which has not been realized, is report. The photoemission and scanning probe measurements demonstrate that monolayer 1T-TaTe2 exhibits a variety of metastable charge density wave orders, including the 19 $\sqrt {19} $ × 19 $\sqrt {19} $ superstructure, which can be selectively stabilized by controlling the post-growth annealing temperature. Moreover, it is found that only the 19 $\sqrt {19} $ × 19 $\sqrt {19} $ order persists in 1T-TaTe2 films thicker than a monolayer, up to 8 layers. The findings identify the previously unrealized novel electronic order in a much-studied transition metal dichalcogenide and provide a viable route to control it within the epitaxial growth process.
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Affiliation(s)
- Jinwoong Hwang
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Yeongrok Jin
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Canxun Zhang
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoScience Institute, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Tiancong Zhu
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Kyoo Kim
- Korea Atomic Energy Research Institute, Daejeon, 34057, South Korea
| | - Yong Zhong
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Ji-Eun Lee
- Department of Physics, Pusan National University, Busan, 46241, South Korea
| | - Zongqi Shen
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Yi Chen
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Wei Ruan
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, Fudan University, Fudan, 200433, China
| | - Hyejin Ryu
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Choongyu Hwang
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Quantum Matter Core-Facility, Pusan National University, Busan, 46241, South Korea
| | - Jaekwang Lee
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Physics, Pusan National University, Busan, 46241, South Korea
- Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, South Korea
| | - Michael F Crommie
- Department of Physics, University of California, Berkeley, Berkeley, CA, 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Kavli Energy NanoScience Institute, University of California, Berkeley, Berkeley, CA, 94720, USA
| | - Sung-Kwan Mo
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Zhi-Xun Shen
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, 94025, USA
- Geballe Laboratory for Advanced Materials, Department of Physics and Applied Physics, Stanford University, Menlo Park, CA, 94305, USA
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27
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Li CK, Yao XP, Liu J, Chen G. Fractionalization on the Surface: Is Type-II Terminated 1T-TaS_{2} Surface an Anomalously Realized Spin Liquid? PHYSICAL REVIEW LETTERS 2022; 129:017202. [PMID: 35841554 DOI: 10.1103/physrevlett.129.017202] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2021] [Revised: 03/22/2022] [Accepted: 06/08/2022] [Indexed: 06/15/2023]
Abstract
The type-II terminated 1T-TaS_{2} surface of a three-dimensional 1T-TaS_{2} bulk material realizes the effective spin-1/2 degree of freedom on each David star cluster with T^{2}=-1 such that the time-reversal symmetry is realized anomalously, despite the fact that bulk three-dimensional 1T-TaS_{2} material has an even number of electrons per unit cell with T^{2}=+1. This surface is effectively viewed as a spin-1/2 triangular lattice magnet, except with a fully gapped topological bulk. We further propose this surface termination realizes a spinon Fermi surface spin liquid with the surface fractionalization but with a nonexotic three-dimensional bulk. We analyze possible experimental consequences, especially the surface spectroscopic measurements, of the type-II terminated surface spin liquid.
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Affiliation(s)
- Chao-Kai Li
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, China
- The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen 518057, China
| | - Xu-Ping Yao
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, China
- The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen 518057, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 200031, China
| | - Gang Chen
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, China
- The University of Hong Kong Shenzhen Institute of Research and Innovation, Shenzhen 518057, China
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28
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Petkov V, Peralta JE, Aoun B, Ren Y. Atomic structure and Mott nature of the insulating charge density wave phase of 1T-TaS 2. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:345401. [PMID: 35688141 DOI: 10.1088/1361-648x/ac77cf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/05/2022] [Accepted: 06/10/2022] [Indexed: 06/15/2023]
Abstract
Using x-ray pair distribution function (PDF) analysis and computer modeling, we explore structure models for the complex charge density wave (CDW) phases of layered 1T-TaS2that both well capture their atomic-level features and are amenable to electronic structure calculations. The models give the most probable position of constituent atoms in terms of 3D repetitive unit cells comprising a minimum number of Ta-S layers. Structure modeling results confirm the emergence of star-of-David (SD) like clusters of Ta atoms in the high-temperature incommensurate (IC) CDW phase and show that, contrary to the suggestions of recent studies, the low-temperature commensurate (C) CDW phase expands upon cooling thus reducing lattice strain. The C-CDW phase is also found to preserve the stacking sequence of Ta-S layers found in the room temperature, nearly commensurate (NC) CDW phase to a large extent. DFT based on the PDF refined model shows that bulk C-CDW 1T-TaS2also preserves the insulating state of individual layers of SD clusters, favoring the Mott physics description of the metal-to-insulator (NC-CDW to C-CDW) phase transition in 1T-TaS2. Our work highlights the importance of using precise crystal structure models in determining the nature of electronic phases in complex materials.
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Affiliation(s)
- V Petkov
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, MI 48858, United States of America
| | - J E Peralta
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, MI 48858, United States of America
| | - B Aoun
- Fullrmc Inc., San Antonio, TX, 78255, United States of America
| | - Y Ren
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, Argonne, IL 60439, United States of America
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong, People's Republic of China
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29
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Mraz A, Venturini R, Svetin D, Sever V, Mihailovic IA, Vaskivskyi I, Ambrozic B, Dražić G, D’Antuono M, Stornaiuolo D, Tafuri F, Kazazis D, Ravnik J, Ekinci Y, Mihailovic D. Charge Configuration Memory Devices: Energy Efficiency and Switching Speed. NANO LETTERS 2022; 22:4814-4821. [PMID: 35688423 PMCID: PMC9228410 DOI: 10.1021/acs.nanolett.2c01116] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/21/2022] [Revised: 05/27/2022] [Indexed: 06/15/2023]
Abstract
Current trends in data processing have given impetus for an intense search of new concepts of memory devices with emphasis on efficiency, speed, and scalability. A promising new approach to memory storage is based on resistance switching between charge-ordered domain states in the layered dichalcogenide 1T-TaS2. Here we investigate the energy efficiency scaling of such charge configuration memory (CCM) devices as a function of device size and data write time τW as well as other parameters that have bearing on efficient device operation. We find that switching energy efficiency scales approximately linearly with both quantities over multiple decades, departing from linearity only when τW approaches the ∼0.5 ps intrinsic switching limit. Compared to current state of the art memory devices, CCM devices are found to be much faster and significantly more energy efficient, demonstrated here with two-terminal switching using 2.2 fJ, 16 ps electrical pulses.
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Affiliation(s)
- Anze Mraz
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
- Faculty
of Electrical Engineering, University of
Ljubljana, Tržaška
cesta 25, 1000 Ljubljana, Slovenia
| | - Rok Venturini
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
- Faculty
of Mathematics and Physics, University of
Ljubljana, Jadranska
cesta 19, 1000 Ljubljana, Slovenia
| | - Damjan Svetin
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
- CENN
Nanocenter, Jamova cesta
39, 1000 Ljubljana, Slovenia
| | - Vitomir Sever
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
| | | | - Igor Vaskivskyi
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
| | - Bojan Ambrozic
- CENN
Nanocenter, Jamova cesta
39, 1000 Ljubljana, Slovenia
| | - Goran Dražić
- Jozef
Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia
- Department
of Materials Chemistry, National Institute
of Chemistry, Hajdrihova
19, 1000 Ljubljana, Slovenia
| | - Maria D’Antuono
- Dipartimento
di Fisica “Ettore Pancini”, Università di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli, Italy
- CNR-SPIN,
Complesso Monte Sant’Angelo, Via Cinthia, 80126 Napoli, Italy
| | - Daniela Stornaiuolo
- Dipartimento
di Fisica “Ettore Pancini”, Università di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli, Italy
- CNR-SPIN,
Complesso Monte Sant’Angelo, Via Cinthia, 80126 Napoli, Italy
| | - Francesco Tafuri
- Dipartimento
di Fisica “Ettore Pancini”, Università di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli, Italy
- CNR-Istituto
Nazionale di Ottica (CNR-INO), Largo Enrico Fermi 6, 50125 Florence, Italy
| | - Dimitrios Kazazis
- Paul
Scherrer Institute, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Jan Ravnik
- Paul
Scherrer Institute, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Yasin Ekinci
- Paul
Scherrer Institute, Forschungsstrasse 111, 5232 Villigen PSI, Switzerland
| | - Dragan Mihailovic
- Complex
Matter Department F7, Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana, Slovenia
- CENN
Nanocenter, Jamova cesta
39, 1000 Ljubljana, Slovenia
- Faculty
of Mathematics and Physics, University of
Ljubljana, Jadranska
cesta 19, 1000 Ljubljana, Slovenia
- Jozef
Stefan International Postgraduate School, Jamova cesta 39, 1000 Ljubljana, Slovenia
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30
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Shen S, Wen C, Kong P, Gao J, Si J, Luo X, Lu W, Sun Y, Chen G, Yan S. Inducing and tuning Kondo screening in a narrow-electronic-band system. Nat Commun 2022; 13:2156. [PMID: 35444181 PMCID: PMC9021272 DOI: 10.1038/s41467-022-29891-4] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Accepted: 04/04/2022] [Indexed: 11/09/2022] Open
Abstract
Although the single-impurity Kondo physics has already been well understood, the understanding of the Kondo lattice where a dense array of local moments couples to the conduction electrons is still far from complete. The ability of creating and tuning the Kondo lattice in non-f-electron systems will be great helpful for further understanding the Kondo lattice behavior. Here we show that the Pb intercalation in the charge-density-wave-driven narrow-electronic-band system 1T-TaS2 induces a transition from the insulating gap to a sharp Kondo resonance in the scanning tunneling microscopy measurements. It results from the Kondo screening of the localized moments in the 13-site Star-of-David clusters of 1T-TaS2. As increasing the Pb concentration, the narrow electronic band derived from the localized electrons shifts away from the Fermi level and the Kondo resonance peak is gradually suppressed. Our results pave the way for creating and tuning many-body electronic states in layered narrow-electronic-band materials.
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Affiliation(s)
- Shiwei Shen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Chenhaoping Wen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Pengfei Kong
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.,University of Science and Technology of China, Hefei, 230026, China
| | - Jianguo Si
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China
| | - Yuping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.,High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, 230031, China.,Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Gang Chen
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, China
| | - Shichao Yan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China. .,ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai, 201210, China.
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31
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Lacinska EM, Furman M, Binder J, Lutsyk I, Kowalczyk PJ, Stepniewski R, Wysmolek A. Raman Optical Activity of 1T-TaS 2. NANO LETTERS 2022; 22:2835-2842. [PMID: 35369696 PMCID: PMC9011401 DOI: 10.1021/acs.nanolett.1c04990] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2023]
Abstract
Measurements of optical activity can be readily performed in transparent matter by means of a rotation of transmitted light polarization. In the case of opaque bulk materials, such measurements cannot be performed, making it difficult to assess possible chiral properties. In this work, we present full angular polarization dependencies of the Raman modes of bulk 1T-TaS2, which has recently been suggested to have chiral properties after pulsed laser excitation. We found that a mechanical rotation of the sample does not alter polarization-resolved Raman spectra, which can only be explained by introducing an antisymmetric Raman tensor, frequently used to describe Raman optical activity (ROA). Raman spectra obtained under circularly polarized excitation demonstrate that 1T-TaS2 indeed shows ROA, providing strong evidence that 1T-TaS2 is chiral under the used conditions of laser excitation. Our results suggest that ROA may be used as a universal tool to study chiral properties of quantum materials.
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Affiliation(s)
- Ewa M. Lacinska
- Faculty
of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Magdalena Furman
- Faculty
of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Johannes Binder
- Faculty
of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Iaroslav Lutsyk
- Faculty
of Physics and Applied Informatics, University
of Lodz, Pomorska 149/153, 90-236 Lodz, Poland
| | - Pawel J. Kowalczyk
- Faculty
of Physics and Applied Informatics, University
of Lodz, Pomorska 149/153, 90-236 Lodz, Poland
| | - Roman Stepniewski
- Faculty
of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Andrzej Wysmolek
- Faculty
of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
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32
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 82] [Impact Index Per Article: 41.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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33
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Yang X, Bao JK, Lou Z, Li P, Jiang C, Wang J, Sun T, Liu Y, Guo W, Ramakrishnan S, Kotla SR, Tolkiehn M, Paulmann C, Cao GH, Nie Y, Li W, Liu Y, van Smaalen S, Lin X, Xu ZA. Commensurate Stacking Phase Transitions in an Intercalated Transition Metal Dichalcogenide. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108550. [PMID: 34871466 DOI: 10.1002/adma.202108550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Revised: 11/14/2021] [Indexed: 06/13/2023]
Abstract
Intercalation and stacking-order modulation are two active ways in manipulating the interlayer interaction of transition metal dichalcogenides (TMDCs), which lead to a variety of emergent phases and allow for engineering material properties. Herein, the growth of Pb-intercalated TMDCs-Pb(Ta1+x Se2 )2 , the first 124-phase, is reported. Pb(Ta1+x Se2 )2 exhibits a unique two-step first-order structural phase transition at around 230 K. The transitions are solely associated with the stacking degree of freedom, evolving from a high-temperature (high-T) phase with ABC stacking and R3m symmetry to an intermediate phase with AB stacking and P3m1, and finally to a low-temperature (low-T) phase again with R3msymmetry, but with ACB stacking. Each step involves a rigid slide of building blocks by a vector [1/3, 2/3, 0]. Intriguingly, gigantic lattice contractions occur at the transitions on warming. At low-T, bulk superconductivity with Tc ≈ 1.8 K is observed. The underlying physics of the structural phase transitions are discussed from first-principle calculations. The symmetry analysis reveals topological nodal lines in the band structure. The results demonstrate the possibility of realizing higher-order metal-intercalated phases of TMDCs and advance the knowledge of polymorphic transitions, and may inspire stacking-order engineering in TMDCs and beyond.
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Affiliation(s)
- Xiaohui Yang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Jin-Ke Bao
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
- Department of Physics, Materials Genome Institute and International Center for Quantum and Molecular Structures, Shanghai University, Shanghai, 200444, P. R. China
| | - Zhefeng Lou
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Peng Li
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Center for Correlated Matter, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Chenxi Jiang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Jialu Wang
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Tulai Sun
- Center for Electron Microscopy, State Key Laboratory Breeding Base of Green Chemistry Synthesis Technology and College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, P. R. China
- Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yabin Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Wei Guo
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Sitaram Ramakrishnan
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
- Department of Quantum Matter, AdSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan
| | - Surya Rohith Kotla
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
| | | | - Carsten Paulmann
- Mineralogisch-Petrographisches Institute, Universität Hamburg, 20146, Hamburg, Germany
| | - Guang-Han Cao
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
| | - Wenbin Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, Zhejiang Province, 310024, P. R. China
| | - Yang Liu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- Center for Correlated Matter, Zhejiang University, Hangzhou, 310058, P. R. China
| | - Sander van Smaalen
- Laboratory of Crystallography, University of Bayreuth, 95447, Bayreuth, Germany
| | - Xiao Lin
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, P. R. China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, P. R. China
| | - Zhu-An Xu
- Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou, 310027, P. R. China
- State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, 310027, P. R. China
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34
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Xu Z, Yang H, Song X, Chen Y, Yang H, Liu M, Huang Z, Zhang Q, Sun J, Liu L, Wang Y. Topical review: recent progress of charge density waves in 2D transition metal dichalcogenide-based heterojunctions and their applications. NANOTECHNOLOGY 2021; 32:492001. [PMID: 34450606 DOI: 10.1088/1361-6528/ac21ed] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Accepted: 08/27/2021] [Indexed: 06/13/2023]
Abstract
Charge density wave (CDW) is an intriguing physical phenomenon especially found in two-dimensional (2D) layered systems such as transition-metal dichalcogenides (TMDs). The study of CDW is vital for understanding lattice modification, strongly correlated electronic behaviors, and other related physical properties. This paper gives a review of the recent studies on CDW emerging in 2D TMDs. First, a brief introduction and the main mechanisms of CDW are given. Second, the interplay between CDW patterns and the related unique electronic phenomena (superconductivity, spin, and Mottness) is elucidated. Then various manipulation methods such as doping, applying strain, local voltage pulse to induce the CDW change are discussed. Finally, examples of the potential application of devices based on CDW materials are given. We also discuss the current challenge and opportunities at the frontier in this research field.
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Affiliation(s)
- Ziqiang Xu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Huixia Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Xuan Song
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yaoyao Chen
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Han Yang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Meng Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Zeping Huang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Quanzhen Zhang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Jiatao Sun
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Liwei Liu
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, People's Republic of China
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35
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Liu ZY, Qiao S, Huang B, Tang QY, Ling ZH, Zhang WH, Xia HN, Liao X, Shi H, Mao WH, Zhu GL, Lü JT, Fu YS. Charge Transfer Gap Tuning via Structural Distortion in Monolayer 1T-NbSe 2. NANO LETTERS 2021; 21:7005-7011. [PMID: 34350759 DOI: 10.1021/acs.nanolett.1c02348] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The Mott state in 1T-TaS2 is predicted to host quantum spin liquids (QSLs). However, its insulating mechanism is controversial due to complications from interlayer coupling. Here, we study the charge transfer state in monolayer 1T-NbSe2, an electronic analogue to TaS2 exempt from interlayer coupling, using spectroscopic imaging scanning tunneling microscopy and first-principles calculations. Monolayer NbSe2 surprisingly displays two types of star of David (SD) motifs with different charge transfer gap sizes, which are interconvertible via temperature variation. In addition, bilayer 1T-NbSe2 shows a Mott collapse by interlayer coupling. Our calculation unveils that the two types of SDs possess distinct structural distortions, altering the effective Coulomb energies of the central Nb orbital. Our calculation suggests that the charge transfer gap, the same parameter for determining the QSL regime, is tunable with strain. This finding offers a general strategy for manipulating the charge transfer state in related systems, which may be tuned into the potential QSL regime.
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Affiliation(s)
- Zhen-Yu Liu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Shuang Qiao
- Beijing Computational Science Research Center, Beijing 100093, People's Republic of China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing 100093, People's Republic of China
| | - Qiao-Yin Tang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Zi-Heng Ling
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Wen-Hao Zhang
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Hui-Nan Xia
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Xin Liao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Hu Shi
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Wen-Hao Mao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Gui-Lin Zhu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Jing-Tao Lü
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
| | - Ying-Shuang Fu
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China
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36
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Dombrowski D, Samad A, Murray C, Petrović M, Ewen P, Michely T, Kralj M, Schwingenschlögl U, Busse C. Two Phases of Monolayer Tantalum Sulfide on Au(111). ACS NANO 2021; 15:13516-13525. [PMID: 34296863 DOI: 10.1021/acsnano.1c04249] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We prepared monolayers of tantalum sulfide on Au(111) by evaporation of Ta in a reactive background of H2S. Under sulfur-rich conditions, monolayers of 2H-TaS2 formed, whereas under sulfur-poor conditions TaS2-x with 0 ≤ x ≤ 1 were found. We identified this phase as TaS, a structure that can be derived from 2H-TaS2 by removal of the bottom S layer.
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Affiliation(s)
- Daniela Dombrowski
- Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
- Department Physik, Universität Siegen, 57068 Siegen, Germany
| | - Abdus Samad
- King Abdullah University of Science and Technology, Physical Science and Engineering Division, 23955 Thuwal, Saudi Arabia
| | - Clifford Murray
- II. Physikalisches Institut, Universität zu Köln, 50937 Köln, Germany
| | - Marin Petrović
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, 10000 Zagreb, Croatia
| | - Pascal Ewen
- Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
| | - Thomas Michely
- II. Physikalisches Institut, Universität zu Köln, 50937 Köln, Germany
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, 10000 Zagreb, Croatia
| | - Udo Schwingenschlögl
- King Abdullah University of Science and Technology, Physical Science and Engineering Division, 23955 Thuwal, Saudi Arabia
| | - Carsten Busse
- Institut für Materialphysik, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
- Department Physik, Universität Siegen, 57068 Siegen, Germany
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37
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Boix-Constant C, Mañas-Valero S, Córdoba R, Baldoví JJ, Rubio Á, Coronado E. Out-of-Plane Transport of 1T-TaS 2/Graphene-Based van der Waals Heterostructures. ACS NANO 2021; 15:11898-11907. [PMID: 34228445 PMCID: PMC8454993 DOI: 10.1021/acsnano.1c03012] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Accepted: 07/01/2021] [Indexed: 05/31/2023]
Abstract
Due to their anisotropy, layered materials are excellent candidates for studying the interplay between the in-plane and out-of-plane entanglement in strongly correlated systems. A relevant example is provided by 1T-TaS2, which exhibits a multifaceted electronic and magnetic scenario due to the existence of several charge density wave (CDW) configurations. It includes quantum hidden phases, superconductivity and exotic quantum spin liquid (QSL) states, which are highly dependent on the out-of-plane stacking of the CDW. In this system, the interlayer stacking of the CDW is crucial for interpreting the underlying electronic and magnetic phase diagram. Here, atomically thin-layers of 1T-TaS2 are integrated in vertical van der Waals heterostructures based on few-layers graphene contacts and their electrical transport properties are measured. Different activation energies in the conductance and a gap at the Fermi level are clearly observed. Our experimental findings are supported by fully self-consistent DFT+U calculations, which evidence the presence of an energy gap in the few-layer limit, not necessarily coming from the formation of out-of-plane spin-paired bilayers at low temperatures, as previously proposed for the bulk. These results highlight dimensionality as a key effect for understanding quantum materials as 1T-TaS2, enabling the possible experimental realization of low-dimensional QSLs.
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Affiliation(s)
- Carla Boix-Constant
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Catedrático José Beltrán Martínez n 2, Paterna 46980, Spain
| | - Samuel Mañas-Valero
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Catedrático José Beltrán Martínez n 2, Paterna 46980, Spain
| | - Rosa Córdoba
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Catedrático José Beltrán Martínez n 2, Paterna 46980, Spain
| | - José J. Baldoví
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Catedrático José Beltrán Martínez n 2, Paterna 46980, Spain
| | - Ángel Rubio
- Max
Planck Institute for the Structure and Dynamics of Matter and Center
for Free-Electron Laser Science, Luruper Chaussee 149, 22761, Hamburg, Germany
- Nano-Bio
Spectroscopy Group, Departamento de Física de Materiales, Universidad del País Vasco, 20018 San Sebastian, Spain
| | - Eugenio Coronado
- Instituto
de Ciencia Molecular (ICMol), Universitat
de València, Catedrático José Beltrán Martínez n 2, Paterna 46980, Spain
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38
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Wen C, Gao J, Xie Y, Zhang Q, Kong P, Wang J, Jiang Y, Luo X, Li J, Lu W, Sun YP, Yan S. Roles of the Narrow Electronic Band near the Fermi Level in 1T-TaS_{2}-Related Layered Materials. PHYSICAL REVIEW LETTERS 2021; 126:256402. [PMID: 34241511 DOI: 10.1103/physrevlett.126.256402] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2021] [Accepted: 05/18/2021] [Indexed: 05/02/2023]
Abstract
Here we use low-temperature scanning tunneling microscopy and spectroscopy to reveal the roles of the narrow electronic band in two 1T-TaS_{2}-related materials (bulk 1T-TaS_{2} and 4H_{b}-TaS_{2}). 4H_{b}-TaS_{2} is a superconducting compound with alternating 1T-TaS_{2} and 1H-TaS_{2} layers, where the 1H-TaS_{2} layer has a weak charge density wave (CDW) pattern and reduces the CDW coupling between the adjacent 1T-TaS_{2} layers. In the 1T-TaS_{2} layer of 4H_{b}-TaS_{2}, we observe a narrow electronic band located near the Fermi level, and its spatial distribution is consistent with the tight-binding calculations for two-dimensional 1T-TaS_{2} layers. The weak electronic hybridization between the 1T-TaS_{2} and 1H-TaS_{2} layers in 4H_{b}-TaS_{2} shifts the narrow electronic band to be slightly above the Fermi level, which suppresses the electronic correlation-induced band splitting. In contrast, in bulk 1T-TaS_{2}, there is an interlayer CDW coupling-induced insulating gap. In comparison with the spatial distributions of the electronic states in bulk 1T-TaS_{2} and 4H_{b}-TaS_{2}, the insulating gap in bulk 1T-TaS_{2} results from the formation of a bonding band and an antibonding band due to the overlap of the narrow electronic bands in the dimerized 1T-TaS_{2} layers.
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Affiliation(s)
- Chenhaoping Wen
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jingjing Gao
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, China
| | - Yuan Xie
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Qing Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Pengfei Kong
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jinghui Wang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yilan Jiang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Xuan Luo
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Jun Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Wenjian Lu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
| | - Yu-Ping Sun
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
- Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Shichao Yan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
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39
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Lee J, Jin KH, Yeom HW. Distinguishing a Mott Insulator from a Trivial Insulator with Atomic Adsorbates. PHYSICAL REVIEW LETTERS 2021; 126:196405. [PMID: 34047567 DOI: 10.1103/physrevlett.126.196405] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/13/2020] [Revised: 03/09/2021] [Accepted: 04/12/2021] [Indexed: 06/12/2023]
Abstract
In an electronic system with various interactions intertwined, revealing the origin of its many-body ground state is challenging and a direct experimental way to verify the correlated nature of an insulator has been lacking. Here we demonstrate a way to unambiguously distinguish a paradigmatic correlated insulator, a Mott insulator, from a trivial band insulator based on their distinct chemical behavior for a surface adsorbate using 1T-TaS_{2}, which has been debated between a spin-frustrated Mott insulator or a spin-singlet trivial insulator. We start from the observation of different sizes of spectral gaps on different surface terminations and show that potassium adatoms on these two surface layers behave in totally different ways. This can be straightforwardly understood from distinct properties of Mott and band insulators due to the fundamental difference of the half- and full-filled orbitals involved, respectively. This work not only solves an outstanding problem in this particularly interesting material but also provides a simple touchstone to identify the correlated ground state of electrons experimentally.
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Affiliation(s)
- Jinwon Lee
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
| | - Kyung-Hwan Jin
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
| | - Han Woong Yeom
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang 37673, Republic of Korea
- Department of Physics, Pohang University of Science and Technology, Pohang 37673, Republic of Korea
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