1
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Zhong J, Zhang S, Duan J, Peng H, Feng Q, Hu Y, Wang Q, Mao J, Liu J, Yao Y. Effective Manipulation of a Colossal Second-Order Transverse Response in an Electric-Field-Tunable Graphene Moiré System. NANO LETTERS 2024; 24:5791-5798. [PMID: 38695400 DOI: 10.1021/acs.nanolett.4c00933] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
The second-order nonlinear transport illuminates a frequency-doubling response emerging in quantum materials with a broken inversion symmetry. The two principal driving mechanisms, the Berry curvature dipole and the skew scattering, reflect various information including ground-state symmetries, band dispersions, and topology of electronic wave functions. However, effective manipulation of them in a single system has been lacking, hindering the pursuit of strong responses. Here, we report on the effective manipulation of the two mechanisms in a single graphene moiré superlattice, AB-BA stacked twisted double bilayer graphene. Most saliently, by virtue of the high tunability of moiré band structures and scattering rates, a record-high second-order transverse conductivity ∼ 510 μm S V-1 is observed, which is orders of magnitude higher than any reported values in the literature. Our findings establish the potential of electrically tunable graphene moiré systems for nonlinear transport manipulations and applications.
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Affiliation(s)
- Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Shihao Zhang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- School of Physics and Electronics, Hunan University, Changsha 410082, China
| | - Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yuqing Hu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qinsheng Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianpeng Liu
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
- ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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2
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Liu H, Culcer D. Dominance of Extrinsic Scattering Mechanisms in the Orbital Hall Effect: Graphene, Transition Metal Dichalcogenides, and Topological Antiferromagnets. PHYSICAL REVIEW LETTERS 2024; 132:186302. [PMID: 38759195 DOI: 10.1103/physrevlett.132.186302] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2023] [Revised: 03/06/2024] [Accepted: 04/02/2024] [Indexed: 05/19/2024]
Abstract
The theory of the orbital Hall effect (OHE), a transverse flow of orbital angular momentum (OAM) in response to an electric field, has concentrated on intrinsic mechanisms. Here, using a quantum kinetic formulation, we determine the full OHE in the presence of short-range disorder using 2D massive Dirac fermions as a prototype. We find that, in doped systems, extrinsic effects associated with the Fermi surface (skew scattering and side jump) provide ≈95% of the OHE. This suggests that, at experimentally relevant transport densities, the OHE is primarily extrinsic.
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Affiliation(s)
- Hong Liu
- School of Physics and Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, UNSW Node, The University of New South Wales, Sydney 2052, Australia
| | - Dimitrie Culcer
- School of Physics and Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, UNSW Node, The University of New South Wales, Sydney 2052, Australia
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3
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Staszek K, Calavalle F, Fert A, Gobbi M, Casanova F, Hueso LE. Microscale Chiral Rectennas for Energy Harvesting. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2400729. [PMID: 38597368 DOI: 10.1002/adma.202400729] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/15/2024] [Revised: 04/04/2024] [Indexed: 04/11/2024]
Abstract
Wireless radiofrequency rectifiers have the potential to power the billions of "Internet of Things" (IoT) devices currently in use by effectively harnessing ambient electromagnetic radiation. However, the current technology relies on the implementation of rectifiers based on Schottky diodes, which exhibit limited capabilities for high-frequency and low-power applications. Consequently, they require an antenna to capture the incoming signal and amplify the input power, thereby limiting the possibility of miniaturizing devices to the millimeter scale. Here, the authors report wireless rectification at the GHz range in a microscale device built on single chiral tellurium with extremely low input powers. By studying the crystal symmetry and the temperature dependence of the rectification, the authors demonstrate that its origin is the intrinsic nonlinear conductivity of the material. Additionally, the unprecedented ability to modulate the rectification output by an electrostatic gate is shown. These results open the path to developing tuneable microscale wireless rectifiers with a single material.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Witold Skowroński
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | - Kamil Staszek
- Institute of Electronics, AGH University of Krakow, Kraków, 30-059, Poland
| | | | - Albert Fert
- Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, 91767, France
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Basque Country, 20018, Spain
- Department of Advanced Polymers and Materials: Physics, Chemistry and Technology, Univesity of the Basque Country (UPV/EHU), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU) and Materials Physics Center (MPC), Donostia-San Sebastián, Basque Country, 20018, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastián, Basque Country, 20018, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Basque Country, 48009, Spain
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4
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Wang L, Zhu J, Chen H, Wang H, Liu J, Huang YX, Jiang B, Zhao J, Shi H, Tian G, Wang H, Yao Y, Yu D, Wang Z, Xiao C, Yang SA, Wu X. Orbital Magneto-Nonlinear Anomalous Hall Effect in Kagome Magnet Fe_{3}Sn_{2}. PHYSICAL REVIEW LETTERS 2024; 132:106601. [PMID: 38518320 DOI: 10.1103/physrevlett.132.106601] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 11/14/2023] [Accepted: 12/20/2023] [Indexed: 03/24/2024]
Abstract
It has been theoretically predicted that perturbation of the Berry curvature by electromagnetic fields gives rise to intrinsic nonlinear anomalous Hall effects that are independent of scattering. Two types of nonlinear anomalous Hall effects are expected. The electric nonlinear Hall effect has recently begun to receive attention, while very few studies are concerned with the magneto-nonlinear Hall effect. Here, we combine experiment and first-principles calculations to show that the kagome ferromagnet Fe_{3}Sn_{2} displays such a magneto-nonlinear Hall effect. By systematic field angular and temperature-dependent transport measurements, we unambiguously identify a large anomalous Hall current that is linear in both applied in-plane electric and magnetic fields, utilizing a unique in-plane configuration. We clarify its dominant orbital origin and connect it to the magneto-nonlinear Hall effect. The effect is governed by the intrinsic quantum geometric properties of Bloch electrons. Our results demonstrate the significance of the quantum geometry of electron wave functions from the orbital degree of freedom and open up a new direction in Hall transport effects.
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Affiliation(s)
- Lujunyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaojiao Zhu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
| | - Haiyun Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hui Wang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Jinjin Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Yue-Xin Huang
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore 487372, Singapore
- School of Sciences, Great Bay University, Dongguan 523000, China
| | - Bingyan Jiang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Jiaji Zhao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Hengjie Shi
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Guang Tian
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Haoyu Wang
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Dapeng Yu
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Zhiwei Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
- Material Science Center, Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing, China
| | - Cong Xiao
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, China
| | - Shengyuan A Yang
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macau, China
| | - Xiaosong Wu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Frontiers Science Center for Nano-optoelectronics, Peking University, Beijing 100871, China
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong 226010, Jiangsu, China
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5
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Lihm JM, Park CH. Nonlinear Hall Effect from Long-Lived Valley-Polarizing Relaxons. PHYSICAL REVIEW LETTERS 2024; 132:106402. [PMID: 38518315 DOI: 10.1103/physrevlett.132.106402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/07/2023] [Accepted: 01/09/2024] [Indexed: 03/24/2024]
Abstract
The nonlinear Hall effect has attracted much attention due to the famous, widely adopted interpretation in terms of the Berry curvature dipole in momentum space. Using ab initio Boltzmann transport equations, we find a 60% enhancement in the nonlinear Hall effect of n-doped GeTe and its noticeable frequency dependence, qualitatively different from the predictions based on the Berry curvature dipole. The origin of these differences is long-lived valley polarization in the electron distribution arising from electron-phonon scattering. Our findings await immediate experimental confirmation.
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Affiliation(s)
- Jae-Mo Lihm
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
| | - Cheol-Hwan Park
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea; Center for Correlated Electron Systems, Institute for Basic Science, Seoul 08826, Korea; and Center for Theoretical Physics, Seoul National University, Seoul 08826, Korea
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6
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Lim S, Singh S, Huang FT, Pan S, Wang K, Kim J, Kim J, Vanderbilt D, Cheong SW. Magnetochiral tunneling in paramagnetic Co 1/3NbS 2. Proc Natl Acad Sci U S A 2024; 121:e2318443121. [PMID: 38412131 DOI: 10.1073/pnas.2318443121] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/24/2023] [Accepted: 01/25/2024] [Indexed: 02/29/2024] Open
Abstract
Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co1/3NbS2, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.
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Affiliation(s)
- Seongjoon Lim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sobhit Singh
- Department of Mechanical Engineering, University of Rochester, Rochester, NY 14627
- Materials Science Program, University of Rochester, Rochester, NY 14627
| | - Fei-Ting Huang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Shangke Pan
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
- State Key Laboratory Base of Novel Function Materials and Preparation Science, School of Material Sciences and Chemical Engineering, Ningbo University, Ningbo 315211, China
| | - Kefeng Wang
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jaewook Kim
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Jinwoong Kim
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - David Vanderbilt
- Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
| | - Sang-Wook Cheong
- Center for Emergent Materials and Department of Physics and Astronomy, Rutgers University, Piscataway, NJ 08854
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7
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Suárez-Rodríguez M, Martín-García B, Skowroński W, Calavalle F, Tsirkin SS, Souza I, De Juan F, Chuvilin A, Fert A, Gobbi M, Casanova F, Hueso LE. Odd Nonlinear Conductivity under Spatial Inversion in Chiral Tellurium. PHYSICAL REVIEW LETTERS 2024; 132:046303. [PMID: 38335368 DOI: 10.1103/physrevlett.132.046303] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2023] [Accepted: 12/13/2023] [Indexed: 02/12/2024]
Abstract
Electrical transport in noncentrosymmetric materials departs from the well-established phenomenological Ohm's law. Instead of a linear relation between current and electric field, a nonlinear conductivity emerges along specific crystallographic directions. This nonlinear transport is fundamentally related to the lack of spatial inversion symmetry. However, the experimental implications of an inversion symmetry operation on the nonlinear conductivity remain to be explored. Here, we report on a large, nonlinear conductivity in chiral tellurium. By measuring samples with opposite handedness, we demonstrate that the nonlinear transport is odd under spatial inversion. Furthermore, by applying an electrostatic gate, we modulate the nonlinear output by a factor of 300, reaching the highest reported value excluding engineered heterostructures. Our results establish chiral tellurium as an ideal compound not just to study the fundamental interplay between crystal structure, symmetry operations and nonlinear transport; but also to develop wireless rectifiers and energy-harvesting chiral devices.
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Affiliation(s)
| | - Beatriz Martín-García
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Witold Skowroński
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- AGH University of Krakow, Institute of Electronics, 30-059 Kraków, Poland
| | - F Calavalle
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Stepan S Tsirkin
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Ivo Souza
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fernando De Juan
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Andrey Chuvilin
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Albert Fert
- Donostia International Physics Center, 20018 Donostia-San Sebastián, Basque Country, Spain
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Department of Materials Physics UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
- Centro de Física de Materiales CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastián, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Basque Country, Spain
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8
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Kaplan D, Holder T, Yan B. Unification of Nonlinear Anomalous Hall Effect and Nonreciprocal Magnetoresistance in Metals by the Quantum Geometry. PHYSICAL REVIEW LETTERS 2024; 132:026301. [PMID: 38277599 DOI: 10.1103/physrevlett.132.026301] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Revised: 07/09/2023] [Accepted: 11/16/2023] [Indexed: 01/28/2024]
Abstract
The quantum geometry has significant consequences in determining transport and optical properties in quantum materials. Here, we use a semiclassical formalism coupled with perturbative corrections unifying the nonlinear anomalous Hall effect and nonreciprocal magnetoresistance (longitudinal resistance) from the quantum geometry. In the dc limit, both transverse and longitudinal nonlinear conductivities include a term due to the normalized quantum metric dipole. The quantum metric contribution is intrinsic and does not scale with the quasiparticle lifetime. We demonstrate the coexistence of a nonlinear anomalous Hall effect and nonreciprocal magnetoresistance in films of the doped antiferromagnetic topological insulator MnBi_{2}Te_{4}. Our work indicates that both longitudinal and transverse nonlinear transport provide a sensitive probe of the quantum geometry in solids.
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Affiliation(s)
- Daniel Kaplan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
| | - Tobias Holder
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
- Raymond and Beverly Sackler School of Physics and Astronomy, Tel Aviv University, Tel Aviv, Israel
| | - Binghai Yan
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 7610001, Israel
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9
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Lu XF, Zhang CP, Wang N, Zhao D, Zhou X, Gao W, Chen XH, Law KT, Loh KP. Nonlinear transport and radio frequency rectification in BiTeBr at room temperature. Nat Commun 2024; 15:245. [PMID: 38172558 PMCID: PMC10764878 DOI: 10.1038/s41467-023-44439-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/24/2023] [Accepted: 12/13/2023] [Indexed: 01/05/2024] Open
Abstract
Materials showing second-order nonlinear transport under time reversal symmetry can be used for Radio Frequency (RF) rectification, but practical application demands room temperature operation and sensitivity to microwatts level RF signals in the ambient. In this study, we demonstrate that BiTeBr exhibits a giant nonlinear response which persists up to 350 K. Through scaling and symmetry analysis, we show that skew scattering is the dominant mechanism. Additionally, the sign of the nonlinear response can be electrically switched by tuning the Fermi energy. Theoretical analysis suggests that the large Rashba spin-orbit interactions (SOI), which gives rise to the chirality of the Bloch electrons, provide the microscopic origin of the observed nonlinear response. Our BiTeBr rectifier is capable of rectifying radiation within the frequency range of 0.2 to 6 gigahertz at room temperature, even at extremely low power levels of -15 dBm, and without the need for external biasing. Our work highlights that materials exhibiting large Rashba SOI have the potential to exhibit nonlinear responses at room temperature, making them promising candidates for harvesting high-frequency and low-power ambient electromagnetic energy.
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Affiliation(s)
- Xiu Fang Lu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Cheng-Ping Zhang
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Dan Zhao
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Xin Zhou
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Xian Hui Chen
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - K T Law
- Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China.
| | - Kian Ping Loh
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore.
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10
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Zhang ZF, Zhu ZG, Su G. Symmetry dictionary on charge and spin nonlinear responses for all magnetic point groups with nontrivial topological nature. Natl Sci Rev 2023; 10:nwad104. [PMID: 37818112 PMCID: PMC10561712 DOI: 10.1093/nsr/nwad104] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/25/2022] [Revised: 11/29/2022] [Accepted: 02/15/2023] [Indexed: 10/12/2023] Open
Abstract
Recently, charge or spin nonlinear transport with nontrivial topological properties in crystal materials has attracted much attention. In this paper, we perform a comprehensive symmetry analysis for all 122 magnetic point groups (MPGs) and provide a useful dictionary for charge and spin nonlinear transport from the Berry curvature dipole, Berry connection polarizability and Drude term with nontrivial topological nature. The results are obtained by conducting a full symmetry investigation of the matrix representations of six nonlinear response tensors. We further identify every MPG that can accommodate two or three of the nonlinear tensors. The present work gives a solid theoretical basis for an overall understanding of the second-order nonlinear responses in realistic materials.
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Affiliation(s)
- Zhi-Fan Zhang
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhen-Gang Zhu
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Gang Su
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, China
- Kavli Institute for Theoretical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
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11
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Huang M, Wu Z, Zhang X, Feng X, Zhou Z, Wang S, Chen Y, Cheng C, Sun K, Meng ZY, Wang N. Intrinsic Nonlinear Hall Effect and Gate-Switchable Berry Curvature Sliding in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2023; 131:066301. [PMID: 37625039 DOI: 10.1103/physrevlett.131.066301] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 04/14/2023] [Accepted: 06/26/2023] [Indexed: 08/27/2023]
Abstract
Though the observation of the quantum anomalous Hall effect and nonlocal transport response reveals nontrivial band topology governed by the Berry curvature in twisted bilayer graphene, some recent works reported nonlinear Hall signals in graphene superlattices that are caused by the extrinsic disorder scattering rather than the intrinsic Berry curvature dipole moment. In this Letter, we report a Berry curvature dipole induced intrinsic nonlinear Hall effect in high-quality twisted bilayer graphene devices. We also find that the application of the displacement field substantially changes the direction and amplitude of the nonlinear Hall voltages, as a result of a field-induced sliding of the Berry curvature hotspots. Our Letter not only proves that the Berry curvature dipole could play a dominant role in generating the intrinsic nonlinear Hall signal in graphene superlattices with low disorder densities, but also demonstrates twisted bilayer graphene to be a sensitive and fine-tunable platform for second harmonic generation and rectification.
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Affiliation(s)
- Meizhen Huang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zefei Wu
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Xu Zhang
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Xuemeng Feng
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Zishu Zhou
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Shi Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
| | - Yong Chen
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Chun Cheng
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen, China
| | - Kai Sun
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - Zi Yang Meng
- Department of Physics and HKU-UCAS Joint Institute of Theoretical and Computational Physics, The University of Hong Kong, Hong Kong, China
| | - Ning Wang
- Department of Physics and Center for Quantum Materials, The Hong Kong University of Science and Technology, Hong Kong, China
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12
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Hu Z, Zhang L, Chakraborty A, D'Olimpio G, Fujii J, Ge A, Zhou Y, Liu C, Agarwal A, Vobornik I, Farias D, Kuo CN, Lue CS, Politano A, Wang SW, Hu W, Chen X, Lu W, Wang L. Terahertz Nonlinear Hall Rectifiers Based on Spin-Polarized Topological Electronic States in 1T-CoTe 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209557. [PMID: 36633006 DOI: 10.1002/adma.202209557] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2022] [Revised: 01/04/2023] [Indexed: 06/17/2023]
Abstract
The zero-magnetic-field nonlinear Hall effect (NLHE) refers to the second-order transverse current induced by an applied alternating electric field; it indicates the topological properties of inversion-symmetry-breaking crystals. Despite several studies on the NLHE induced by the Berry-curvature dipole in Weyl semimetals, the direct current conversion by rectification is limited to very low driving frequencies and cryogenic temperatures. The nonlinear photoresponse generated by the NLHE at room temperature can be useful for numerous applications in communication, sensing, and photodetection across a high bandwidth. In this study, observations of the second-order NLHE in type-II Dirac semimetal CoTe2 under time-reversal symmetry are reported. This is determined by the disorder-induced extrinsic contribution on the broken-inversion-symmetry surface and room-temperature terahertz rectification without the need for semiconductor junctions or bias voltage. It is shown that remarkable photoresponsivity over 0.1 A W-1 , a response time of approximately 710 ns, and a mean noise equivalent power of 1 pW Hz-1/2 can be achieved at room temperature. The results open a new pathway for low-energy photon harvesting via nonlinear rectification induced by the NLHE in strongly spin-orbit-coupled and inversion-symmetry-breaking systems, promising a considerable impact in the field of infrared/terahertz photonics.
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Affiliation(s)
- Zhen Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Libo Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Atasi Chakraborty
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Gianluca D'Olimpio
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Jun Fujii
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Yuanchen Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
| | - Changlong Liu
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Amit Agarwal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, 208016, India
| | - Ivana Vobornik
- Consiglio Nazionale delle Ricerche (CNR)- Istituto Officina dei Materiali (IOM), Laboratorio TASC in Area Science, Park S.S. 14 km 163.5, 34149, Trieste, Italy
| | - Daniel Farias
- Departamento de Física de la Materia Condensada and Instituto "Nicolás Cabrera", Universidad Autónoma de Madrid, 28049, Madrid, Spain
- Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, 28049, Madrid, Spain
| | - Chia-Nung Kuo
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Chin Shan Lue
- Department of Physics, Cheng Kung University, 1 Ta-Hsueh Road, 70101, Tainan, Taiwan, China
| | - Antonio Politano
- Department of Physical and Chemical Sciences, University of L'Aquila, via Vetoio, (AQ), 67100, L'Aquila, Italy
| | - Shao-Wei Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
| | - Xiaoshuang Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- College of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, No. 1, Sub-Lane Xiangshan, Xihu District, Hangzhou, 310024, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Lin Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu-tian Road, Shanghai, 200083, China
- University of Chinese Academy of Sciences, No. 19A Yuquan Road, Beijing, 100049, China
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13
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Yar A, Sultana R. Nonlinear Hall effect in monolayer phosphorene with broken inversion symmetry. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:165701. [PMID: 36825779 DOI: 10.1088/1361-648x/acbc02] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 02/14/2023] [Indexed: 06/18/2023]
Abstract
Nonlinear Hall effect (NLHE), a new member of the family of Hall effects, in monolayer phosphorene is investigated. We find that phosphorene exhibits pronounced NLHE, arising from the dipole moment of the Berry curvature induced by the proximity effect that breaks the inversion symmetry of the system. Remarkably, the nonlinear Hall response exhibits central minimum with a width on the order of the band gap, followed by two resonance-like peaks. Interestingly, each resonance peak of the Hall response shifts in the negative region of the chemical potential which is consistent with the shift of valence and conduction bands in the energy spectrum of monolayer phosphorene. It is observed that the two peaks are asymmetric, originated from anisotropy in the band structure of phosphorene. It is shown that the NLHE is very sensitive to the band gap and temperature of the system. Moreover, we find that a phase transition occurs in the nonlinear Hall response and nonlinear spin Hall conductivity of the system under the influence of spin-orbit interaction, tuned by the strength of interaction and band gap induced in the energy spectrum of monolayer phosphorene with broken inversion symmetry.
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Affiliation(s)
- Abdullah Yar
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
| | - Rifat Sultana
- Department of Physics, Kohat University of Science and Technology, Kohat 26000, Khyber Pakhtunkhwa, Pakistan
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14
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Mazzola F, Ghosh B, Fujii J, Acharya G, Mondal D, Rossi G, Bansil A, Farias D, Hu J, Agarwal A, Politano A, Vobornik I. Discovery of a Magnetic Dirac System with a Large Intrinsic Nonlinear Hall Effect. NANO LETTERS 2023; 23:902-907. [PMID: 36689192 PMCID: PMC10064332 DOI: 10.1021/acs.nanolett.2c04194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/26/2022] [Revised: 01/17/2023] [Indexed: 06/17/2023]
Abstract
Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order enables the realization of novel topological phases with exotic transport properties, including the anomalous Hall effect and magneto-chiral phenomena. Herein, we report experimental signature of topological Dirac antiferromagnetism in TaCoTe2 via angle-resolved photoelectron spectroscopy and first-principles density functional theory calculations. In particular, we find the existence of spin-orbit coupling-induced gaps at the Fermi level, consistent with the manifestation of a large intrinsic nonlinear Hall conductivity. Remarkably, we find that the latter is extremely sensitive to the orientation of the Néel vector, suggesting TaCoTe2 as a suitable candidate for the realization of non-volatile spintronic devices with an unprecedented level of intrinsic tunability.
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Affiliation(s)
- Federico Mazzola
- CNR-IOM
TASC Laboratory, Area Science Park, 34149Trieste, Italy
- Department
of Molecular Sciences and Nanosystems, Ca’
Foscari University of Venice, 30172Venice, Italy
| | - Barun Ghosh
- Department
of Physics, Northeastern University, Boston, Massachusetts02115, United States
| | - Jun Fujii
- CNR-IOM
TASC Laboratory, Area Science Park, 34149Trieste, Italy
| | - Gokul Acharya
- Department
of Physics, University of Arkansas, Fayetteville, Arkansas72701, United States
| | - Debashis Mondal
- CNR-IOM
TASC Laboratory, Area Science Park, 34149Trieste, Italy
| | | | - Arun Bansil
- Department
of Physics, Northeastern University, Boston, Massachusetts02115, United States
| | - Daniel Farias
- Departamento
de Física de la Materia Condensada, Universidad Autónoma de Madrid, 28049Madrid, Spain
- Instituto
“Nicolás Cabrera” and Condensed Matter Physics
Center (IFIMAC), Universidad Autónoma
de Madrid, 28049Madrid, Spain
| | - Jin Hu
- Department
of Physics, University of Arkansas, Fayetteville, Arkansas72701, United States
| | - Amit Agarwal
- Department
of Physics, Indian Institute of Technology
Kanpur, Kanpur208016, India
| | - Antonio Politano
- Department
of Physical and Chemical Sciences, University
of L’Aquila, Via
Vetoio, 67100L’Aquila, Italy
| | - Ivana Vobornik
- CNR-IOM
TASC Laboratory, Area Science Park, 34149Trieste, Italy
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15
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Min L, Tan H, Xie Z, Miao L, Zhang R, Lee SH, Gopalan V, Liu CX, Alem N, Yan B, Mao Z. Strong room-temperature bulk nonlinear Hall effect in a spin-valley locked Dirac material. Nat Commun 2023; 14:364. [PMID: 36690617 PMCID: PMC9871029 DOI: 10.1038/s41467-023-35989-0] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 01/10/2023] [Indexed: 01/24/2023] Open
Abstract
Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena except for the surface NLHE of TaIrTe4. Bulk RT NLHE is highly desired due to its ability to generate large photocurrent. Here, we show the spin-valley locked Dirac state in BaMnSb2 can generate a strong bulk NLHE at RT. In the microscale devices, we observe the typical signature of an intrinsic NLHE, i.e. the transverse Hall voltage quadratically scales with the longitudinal current as the current is applied to the Berry curvature dipole direction. Furthermore, we also demonstrate our nonlinear Hall device's functionality in wireless microwave detection and frequency doubling. These findings broaden the coupled spin and valley physics from 2D systems into a 3D system and lay a foundation for exploring bulk NLHE's applications.
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Affiliation(s)
- Lujin Min
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Hengxin Tan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhijian Xie
- grid.266860.c0000 0001 0671 255XDepartment of Electrical and Computer Engineering, North Carolina Agriculture &Technical State University, Greensboro, NC USA
| | - Leixin Miao
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Ruoxi Zhang
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Seng Huat Lee
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
| | - Venkatraman Gopalan
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Chao-Xing Liu
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA
| | - Nasim Alem
- grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA
| | - Binghai Yan
- grid.13992.300000 0004 0604 7563Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot, Israel
| | - Zhiqiang Mao
- grid.29857.310000 0001 2097 4281Department of Physics, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 4281Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA USA ,grid.29857.310000 0001 2097 42812D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA USA
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16
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Duan J, Jian Y, Gao Y, Peng H, Zhong J, Feng Q, Mao J, Yao Y. Giant Second-Order Nonlinear Hall Effect in Twisted Bilayer Graphene. PHYSICAL REVIEW LETTERS 2022; 129:186801. [PMID: 36374703 DOI: 10.1103/physrevlett.129.186801] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 08/08/2022] [Accepted: 09/30/2022] [Indexed: 06/16/2023]
Abstract
In the second-order response regime, the Hall voltage can be nonzero without time-reversal symmetry breaking but inversion symmetry breaking. Multiple mechanisms contribute to the nonlinear Hall effect. The disorder-related contributions can enter the NLHE in the leading role, but experimental investigations are scarce, especially the exploration of the contributions from different disorder sources. Here, we report a giant nonlinear response in twisted bilayer graphene, dominated by disorder-induced skew scattering. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. A peak value of the second-order Hall conductivity reaching 8.76 μm SV^{-1} is observed close to the full filling of the moiré band, four order larger than the intrinsic contribution detected in WTe_{2}. The scaling shows that the giant second-order nonlinear Hall effect in twisted bilayer graphene stems from the collaboration of the static (impurities) and dynamic (phonons) disorders. It is mainly determined by the impurity skew scattering at 1.7 K. The phonon skew scattering, however, has a much larger coupling coefficient, and becomes comparable to the impurity contribution as the temperature rises. Our observations provide a comprehensive experimental understanding of the disorder-related mechanisms in the nonlinear Hall effect.
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Affiliation(s)
- Junxi Duan
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yu Jian
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Yang Gao
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Huimin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinrui Zhong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Qi Feng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
| | - Jinhai Mao
- School of Physical Sciences and CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing 100086, China
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17
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Roy S, Narayan A. Non-linear Hall effect in multi-Weyl semimetals. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:385301. [PMID: 35820408 DOI: 10.1088/1361-648x/ac8091] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2022] [Accepted: 07/12/2022] [Indexed: 06/15/2023]
Abstract
In the presence of time reversal symmetry, a non-linear Hall effect can occur in systems without an inversion symmetry. One of the prominent candidates for detection of such Hall signals are Weyl semimetals. In this article, we investigate the Berry curvature induced second and third order Hall effect in multi-Weyl semimetals with topological chargesn=1,2,3. We use low energy effective models to obtain general analytical expressions and discover the presence of a large Berry curvature dipole (BCD) in multi-Weyl semimetals, compared to usual (n = 1) Weyl semimetals. We also study the BCD in a realistic tight-binding lattice model and observe two different kinds of variation with increasing topological charge-these can be attributed to different underlying Berry curvature components. We provide estimates of the signatures of second harmonic of Hall signal in multi-Weyl semimetals, which can be detected experimentally. Furthermore, we predict the existence of a third order Hall signal in multi-Weyl semimetals. We derive the analytical expressions of Berry connection polarizability tensor, which is responsible for third order effects, using a low energy model and estimate the measurable conductivity. Our work can help guide experimental discovery of Berry curvature multipole physics in multi-Weyl semimetals.
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Affiliation(s)
- Saswata Roy
- Undergraduate Programme, Indian Institute of Science, Bangalore 560012, India
| | - Awadhesh Narayan
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore 560012, India
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18
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Wang C, Xiao RC, Liu H, Zhang Z, Lai S, Zhu C, Cai H, Wang N, Chen S, Deng Y, Liu Z, Yang SA, Gao WB. Room-temperature third-order nonlinear Hall effect in Weyl semimetal TaIrTe 4. Natl Sci Rev 2022; 9:nwac020. [PMID: 36694799 PMCID: PMC9869080 DOI: 10.1093/nsr/nwac020] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/22/2021] [Revised: 01/14/2022] [Accepted: 01/16/2022] [Indexed: 01/27/2023] Open
Abstract
The second-order nonlinear Hall effect observed in the time-reversal symmetric system has not only shown abundant physical content, but also exhibited potential application prospects. Recently, a third-order nonlinear Hall effect has been observed in MoTe2 and WTe2. However, few-layer MoTe2 and WTe2 are usually unstable in air and the observed third-order nonlinear Hall effect can be measured only at low temperature, which hinders further investigation as well as potential application. Thus, exploring new air-stable material systems with a sizable third-order nonlinear Hall effect at room temperature is an urgent task. Here, in type-II Weyl semimetal TaIrTe4, we observed a pronounced third-order nonlinear Hall effect, which can exist at room temperature and remain stable for months. The third-order nonlinear Hall effect is connected to the Berry-connection polarizability tensor instead of the Berry curvature. The possible mechanism of the observation of the third-order nonlinear Hall effect in TaIrTe4 at room temperature has been discussed. Our findings will open an avenue towards exploring room-temperature nonlinear devices in new quantum materials.
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Affiliation(s)
| | | | - Huiying Liu
- Research Laboratory for Quantum Materials, Singapore University of Technology and Design, Singapore487372, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shen Lai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore637371, Singapore
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing100190, China
| | - Ya Deng
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore639798, Singapore
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19
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Keser AC, Lyanda-Geller Y, Sushkov OP. Nonlinear Quantum Electrodynamics in Dirac Materials. PHYSICAL REVIEW LETTERS 2022; 128:066402. [PMID: 35213194 DOI: 10.1103/physrevlett.128.066402] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/29/2021] [Revised: 10/28/2021] [Accepted: 01/13/2022] [Indexed: 06/14/2023]
Abstract
Classical electromagnetism is linear. However, fields can polarize the vacuum Dirac sea, causing quantum nonlinear electromagnetic phenomena, e.g., scattering and splitting of photons, that occur only in very strong fields found in neutron stars or heavy ion colliders. We show that strong nonlinearity arises in Dirac materials at much lower fields ∼1 T, allowing us to explore the nonperturbative, extremely high field limit of quantum electrodynamics in solids. We explain recent experiments in a unified framework and predict a new class of nonlinear magnetoelectric effects, including a magnetic enhancement of dielectric constant of insulators and a strong electric modulation of magnetization. We propose experiments and discuss the applications in novel materials.
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Affiliation(s)
- Aydın Cem Keser
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
| | - Yuli Lyanda-Geller
- Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA
| | - Oleg P Sushkov
- School of Physics, University of New South Wales, Sydney, New South Wales 2052, Australia
- Australian Research Council Centre of Excellence in Low-Energy Electronics Technologies, University of New South Wales, Sydney, New South Wales 2052, Australia
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20
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Wang C, Gao Y, Xiao D. Intrinsic Nonlinear Hall Effect in Antiferromagnetic Tetragonal CuMnAs. PHYSICAL REVIEW LETTERS 2021; 127:277201. [PMID: 35061403 DOI: 10.1103/physrevlett.127.277201] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2021] [Accepted: 11/18/2021] [Indexed: 06/14/2023]
Abstract
Detecting the orientation of the Néel vector is a major research topic in antiferromagnetic spintronics. Here we recognize the intrinsic nonlinear Hall effect, which is independent of the relaxation time, as a prominent contribution to the time-reversal-odd second order conductivity and can be used to detect the reversal of the Néel vector. In contrast, the Berry-curvature-dipole-induced nonlinear Hall effect depends linearly on relaxation time and is time-reversal even. We study the intrinsic nonlinear Hall effect in an antiferromagnetic metal: tetragonal CuMnAs, and show that its nonlinear Hall conductivity can reach the order of mA/V^{2}. The dependence on the chemical potential of such nonlinear Hall conductivity can be qualitatively explained by a tilted massive Dirac model. Moreover, we demonstrate its strong temperature dependence and briefly discuss its competition with the second order Drude conductivity. Finally, a complete survey of magnetic point groups is presented, providing guidelines for finding more antiferromagnetic materials with the intrinsic nonlinear Hall effect.
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Affiliation(s)
- Chong Wang
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
| | - Yang Gao
- ICQD, Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Di Xiao
- Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, USA
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