1
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Canetta A, Volosheniuk S, Satheesh S, Alvarinhas Batista JP, Castellano A, Conte R, Chica DG, Watanabe K, Taniguchi T, Roy X, van der Zant HSJ, Burghard M, Verstraete MJ, Gehring P. Impact of Spin-Entropy on the Thermoelectric Properties of a 2D Magnet. NANO LETTERS 2024; 24:6513-6520. [PMID: 38652810 DOI: 10.1021/acs.nanolett.4c00809] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Heat-to-charge conversion efficiency of thermoelectric materials is closely linked to the entropy per charge carrier. Thus, magnetic materials are promising building blocks for highly efficient energy harvesters as their carrier entropy is boosted by a spin degree of freedom. In this work, we investigate how this spin-entropy impacts heat-to-charge conversion in the A-type antiferromagnet CrSBr. We perform simultaneous measurements of electrical conductance and thermocurrent while changing magnetic order using the temperature and magnetic field as tuning parameters. We find a strong enhancement of the thermoelectric power factor at around the Néel temperature. We further reveal that the power factor at low temperatures can be increased by up to 600% upon applying a magnetic field. Our results demonstrate that the thermoelectric properties of 2D magnets can be optimized by exploiting the sizable impact of spin-entropy and confirm thermoelectric measurements as a sensitive tool to investigate subtle magnetic phase transitions in low-dimensional magnets.
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Affiliation(s)
- Alessandra Canetta
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium
| | - Serhii Volosheniuk
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Sayooj Satheesh
- Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
| | | | - Aloïs Castellano
- Nanomat/Q-MAT/ and European Theoretical Spectroscopy Facility, Université de Liège, B-4000, Liège, Belgium
| | - Riccardo Conte
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Daniel George Chica
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, 2628CJ Delft, The Netherlands
| | - Marko Burghard
- Max-Planck-Institut für Festkörperforschung, D-70569 Stuttgart, Germany
| | - Matthieu Jean Verstraete
- Nanomat/Q-MAT/ and European Theoretical Spectroscopy Facility, Université de Liège, B-4000, Liège, Belgium
- ITP, Physics Department, Utrecht University, 3508 TA Utrecht, The Netherlands
| | - Pascal Gehring
- Institute of Condensed Matter and Nanosciences, Université Catholique de Louvain (UCLouvain), 1348 Louvain-la-Neuve, Belgium
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2
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Yang B, Bhujel B, Chica DG, Telford EJ, Roy X, Ibrahim F, Chshiev M, Cosset-Chéneau M, Wees BJV. Electrostatically controlled spin polarization in Graphene-CrSBr magnetic proximity heterostructures. Nat Commun 2024; 15:4459. [PMID: 38796433 PMCID: PMC11128003 DOI: 10.1038/s41467-024-48809-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/04/2023] [Accepted: 05/15/2024] [Indexed: 05/28/2024] Open
Abstract
The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as an active component in spintronics devices. The electrostatic control of this spin polarization in graphene has however never been demonstrated so far. We show that interfacing graphene with the van der Waals antiferromagnet CrSBr results in an unconventional manifestation of the quantum Hall effect, which can be attributed to the presence of counterflowing spin-polarized edge channels originating from the spin-dependent exchange shift in graphene. We extract an exchange shift ranging from 27 - 32 meV, and show that it also produces an electrostatically tunable spin polarization of the electron/hole carriers in graphene ranging from - 50% to + 69% in the absence of a magnetic field. This proof of principle provides a starting point for the use of graphene as an electrostatically tunable source of spin current and could allow this system to generate a large magnetoresistance in gate tunable spin valve devices.
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Affiliation(s)
- Boxuan Yang
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands.
| | - Bibek Bhujel
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Evan J Telford
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
- Department of Physics, Columbia University, New York, NY, 10027, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Fatima Ibrahim
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
| | - Mairbek Chshiev
- Univ. Grenoble Alpes, CEA, CNRS, Spintec, Grenoble, 38000, France
- Institut Universitaire de France (IUF), Paris, 75231, France
| | - Maxen Cosset-Chéneau
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands.
| | - Bart J van Wees
- Zernike Institute for Advanced Materials, University of Groningen, 9747, AG, Groningen, The Netherlands
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3
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Lu L, Wang Q, Duan H, Zhu K, Hu T, Ma Y, Shen S, Niu Y, Liu J, Wang J, Ekahana SA, Dreiser J, Soh Y, Yan W, Wang G, Xiong Y, Hao N, Lu Y, Tian M. Tunable Magnetism in Atomically Thin Itinerant Antiferromagnet with Room-Temperature Ferromagnetic Order. NANO LETTERS 2024; 24:5984-5992. [PMID: 38728101 DOI: 10.1021/acs.nanolett.4c00472] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2024]
Abstract
Addressing the need for modulated spin configurations is crucial, as they serve as the foundational building blocks for next-generation spintronics, particularly in atomically thin structures and at room temperature. In this work, we realize intrinsic ferromagnetism in monolayer flakes and tunable ferro-/antiferromagnetism in (Fe0.56Co0.44)5GeTe2 antiferromagnets. Remarkably, the ferromagnetic ordering (≥1 L) and antiferromagnetic ordering (≥4 L) remain discernible up to room temperature. The TC (∼310 K) of the monolayer flakes sets a record high for known exfoliated monolayer van der Waals magnets. Within the framework of A-type antiferromagnetism, a notable odd-even layer-number effect at elevated temperatures (T = 150 K) is observed. Of particular interest is the strong ferromagnetic order in even-layer flakes at low temperatures. The intricate interplay among magnetic field strength, layer number, and temperature gives rise to a diverse array of phenomena, holding promise not only for new physics but also for practical applications.
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Affiliation(s)
- Longyu Lu
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Qing Wang
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Hengli Duan
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Kejia Zhu
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Tao Hu
- School of Materials Science and Engineering, Anhui University, Hefei 230601, China
| | - Yupeng Ma
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Shengchun Shen
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
| | - Yuran Niu
- MAX IV Laboratory, Lund University, Lund 22100, Sweden
| | - Jiatu Liu
- MAX IV Laboratory, Lund University, Lund 22100, Sweden
| | - Jianlin Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | | | - Jan Dreiser
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
| | - Y Soh
- Paul Scherrer Institute, 5232 Villigen PSI, Switzerland
| | - Wensheng Yan
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Guopeng Wang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Yimin Xiong
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
- Hefei National Laboratory, Hefei 230028, China
| | - Ning Hao
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui 230031, China
| | - Yalin Lu
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, Hefei 230028, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
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4
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Sun Z, Su Y, Zhi A, Gao Z, Han X, Wu K, Bao L, Huang Y, Shi Y, Bai X, Cheng P, Chen L, Wu K, Tian X, Wu C, Feng B. Evidence for multiferroicity in single-layer CuCrSe 2. Nat Commun 2024; 15:4252. [PMID: 38762594 PMCID: PMC11102510 DOI: 10.1038/s41467-024-48636-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/05/2024] [Accepted: 05/09/2024] [Indexed: 05/20/2024] Open
Abstract
Multiferroic materials, which simultaneously exhibit ferroelectricity and magnetism, have attracted substantial attention due to their fascinating physical properties and potential technological applications. With the trends towards device miniaturization, there is an increasing demand for the persistence of multiferroicity in single-layer materials at elevated temperatures. Here, we report high-temperature multiferroicity in single-layer CuCrSe2, which hosts room-temperature ferroelectricity and 120 K ferromagnetism. Notably, the ferromagnetic coupling in single-layer CuCrSe2 is enhanced by the ferroelectricity-induced orbital shift of Cr atoms, which is distinct from both types I and II multiferroicity. These findings are supported by a combination of second-harmonic generation, piezo-response force microscopy, scanning transmission electron microscopy, magnetic, and Hall measurements. Our research provides not only an exemplary platform for delving into intrinsic magnetoelectric interactions at the single-layer limit but also sheds light on potential development of electronic and spintronic devices utilizing two-dimensional multiferroics.
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Affiliation(s)
- Zhenyu Sun
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Department of Chemistry, Brown University, Providence, RI, 02912, USA
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yueqi Su
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China
| | - Aomiao Zhi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhicheng Gao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Kang Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lihong Bao
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary Science, Beijing Institute of Technology, Beijing, 100081, China
| | - Youguo Shi
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Xuedong Bai
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Peng Cheng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Lan Chen
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
| | - Kehui Wu
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China
| | - Xuezeng Tian
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Changzheng Wu
- School of Chemistry and Materials Sciences, University of Science and Technology of China, Hefei, 230026, China.
- CAS Center for Excellence in Nanoscience, and CAS Key Laboratory of Mechanical Behavior and Design of Materials, Hefei, 230026, China.
- Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Hefei, 230026, China.
| | - Baojie Feng
- Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
- Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China.
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5
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Ziebel ME, Feuer ML, Cox J, Zhu X, Dean CR, Roy X. CrSBr: An Air-Stable, Two-Dimensional Magnetic Semiconductor. NANO LETTERS 2024; 24:4319-4329. [PMID: 38567828 DOI: 10.1021/acs.nanolett.4c00624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/18/2024]
Abstract
The discovery of magnetic order at the 2D limit has sparked new exploration of van der Waals magnets for potential use in spintronics, magnonics, and quantum information applications. However, many of these materials feature low magnetic ordering temperatures and poor air stability, limiting their fabrication into practical devices. In this Mini-Review, we present a promising material for fundamental studies and functional use: CrSBr, an air-stable, two-dimensional magnetic semiconductor. Our discussion highlights experimental research on bulk CrSBr, including quasi-1D semiconducting properties, A-type antiferromagnetic order (TN = 132 K), and strong coupling between its electronic and magnetic properties. We then discuss the behavior of monolayer and few-layer flakes and present a perspective on promising avenues for further studies on CrSBr.
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Affiliation(s)
- Michael E Ziebel
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Margalit L Feuer
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Jordan Cox
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Columbia University, Department of Chemistry, New York, New York 10027, United States
| | - Cory R Dean
- Columbia University, Department of Physics, New York, New York 10027, United States
| | - Xavier Roy
- Columbia University, Department of Chemistry, New York, New York 10027, United States
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6
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Jo J, Mañas-Valero S, Coronado E, Casanova F, Gobbi M, Hueso LE. Nonvolatile Electric Control of Antiferromagnet CrSBr. NANO LETTERS 2024; 24:4471-4477. [PMID: 38587318 DOI: 10.1021/acs.nanolett.4c00348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/09/2024]
Abstract
van der Waals magnets are emerging as a promising material platform for electric field control of magnetism, offering a pathway toward the elimination of external magnetic fields from spintronic devices. A further step is the integration of such magnets with electrical gating components that would enable nonvolatile control of magnetic states. However, this approach remains unexplored for antiferromagnets, despite their growing significance in spintronics. Here, we demonstrate nonvolatile electric field control of magnetoelectric characteristics in van der Waals antiferromagnet CrSBr. We integrate a CrSBr channel in a flash-memory architecture featuring charge trapping graphene multilayers. The electrical gate operation triggers a nonvolatile 200% change in the antiferromagnetic state of CrSBr resistance by manipulating electron accumulation/depletion. Moreover, the nonvolatile gate modulates the metamagnetic transition field of CrSBr and the magnitude of magnetoresistance. Our findings highlight the potential of manipulating magnetic properties of antiferromagnetic semiconductors in a nonvolatile way.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol) Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
| | - Marco Gobbi
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, 20018 Donostia-San Sebastián, Basque Country, Spain
| | - Luis E Hueso
- CIC nanoGUNE BRTA, 20018 Donostia-San Sebastian, Basque Country, Spain
- IKERBASQUE, Basque Foundation for Science, 48013 Bilbao, Basque Country, Spain
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7
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Jeong J, Kiem DH, Guo D, Duan R, Watanabe K, Taniguchi T, Liu Z, Han MJ, Zheng S, Yang H. Spin-Selective Memtransistors with Magnetized Graphene. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310291. [PMID: 38235929 DOI: 10.1002/adma.202310291] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2023] [Revised: 12/08/2023] [Indexed: 01/19/2024]
Abstract
Spin-polarized bands in pristine and proximity-induced magnetic materials are promising building blocks for future devices. Conceptually new memory, logic, and neuromorphic devices are conceived based on atomically thin magnetic materials and the manipulation of their spin-polarized bands via electrical and optical methods. A critical remaining issue is the direct probe and the optimized use of the magnetic coupling effect in van der Waals heterostructures, which requires further delicate design of atomically thin magnetic materials and devices. Here, a spin-selective memtransistor with magnetized single-layered graphene on a reactive antiferromagnetic material, CrI3, is reported. The spin-dependent hybridization between graphene and CrI3 atomic layers enables the spin-selective bandgap opening in the single-layered graphene and the electric field control of magnetization in a specific CrI3 layer. The microscopic working principle is clarified by the first-principles calculations and theoretical analysis of the transport data. Reliable memtransistor operations (i.e., memory and logic device-combined operations), as well as a spin-selective probe of Landau levels in the magnetized graphene, are achieved by using the subtle manipulation of the magnetic proximity effect via electrical means.
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Affiliation(s)
- Juyeong Jeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Do Hoon Kiem
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Dan Guo
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Ruihuan Duan
- CINTRA CNRS/NTU/THALES, Research Techno Plaza, Nanyang Technological University, Singapore, 637371, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Kenji Watanabe
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 3030044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 3030044, Japan
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, Singapore
| | - Myung Joon Han
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
| | - Shoujun Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, South Korea
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8
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Zhang H, Meng L, Zhang Y, Xin Q, Zhou Y, Ma Z, Zuo L, Zheng C, Luo J, Zhou Y, Ding C, Li J. Light and Magnetism Orchestrating Aquatic Pollutant-Degradation Robots in Programmable Trajectories. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2311446. [PMID: 38160323 DOI: 10.1002/adma.202311446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/31/2023] [Revised: 12/12/2023] [Indexed: 01/03/2024]
Abstract
Interfacial floating robots have promising applications in carriers, environmental monitoring, water treatment, and so on. Even though, engineering smart robots with both precisely efficient navigation and elimination of water pollutants in long term remains a challenge, as the superhydrophobicity greatly lowers resistance for aquatic motion while sacrificing chemical reactivity of the surface. Here, a pollutant-removing superhydrophobic robot integrated with well-assembled iron oxide-bismuth sulfide heterojunction composite minerals, which provide both light and magnetic propulsion, and the ability of catalytic degradation, is reported. The motion velocity of the robot reaches up to 51.9 mm s-1 within only 300 ms of acceleration under the orchestration of light, and brakes rapidly (≈200-300 ms) once turn off the light. And magnetism extends the robot to work in broad range of surface tensions in any programmable trajectory. Besides, purification of polluted water is efficiently achieved in situ and the degradation efficiency exhibits eightfold enhancements under the effect of light-triggered photothermal behavior coupled with magnetic induction, overcoming the dilemma of efficient motion with catalytic superhydrophobicity. This strategy developed here provides guidelines for the explorations of high-performance smart devices.
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Affiliation(s)
- Hongbo Zhang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Lingzhuang Meng
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Yan Zhang
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Qiangwei Xin
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Yuhang Zhou
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Zhengxin Ma
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Liangrui Zuo
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Chuyi Zheng
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Jun Luo
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Yahong Zhou
- CAS Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Beijing, 100190, China
| | - Chunmei Ding
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
| | - Jianshu Li
- College of Polymer Science and Engineering, State Key Laboratory of Polymer Materials Engineering, Sichuan University, Chengdu, 610065, China
- State Key Laboratory of Oral Diseases, West China Hospital of Stomatology, Sichuan University, Chengdu, 610041, China
- Med-X Center for Materials, Sichuan University, Chengdu, 610041, China
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9
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Chen Z, Wang C, Xue J, Chen J, Mao L, Liu H, Lu H. Observation of Ferromagnetism in Dilute Magnetic Halide Perovskite Semiconductors. NANO LETTERS 2024; 24:3125-3132. [PMID: 38421805 DOI: 10.1021/acs.nanolett.3c04982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/02/2024]
Abstract
Dilute magnetic semiconductors (DMSs) have attracted much attention because of their potential use in spintronic devices. Here, we demonstrate the observation of robust ferromagnetism in a solution-processable halide perovskite semiconductor with dilute magnetic ions. By codoping of magnetic (Fe2+) and aliovalent (Bi3+) metal ions into CH3NH3PbCl3 (MAPbCl3) perovskite, ferromagnetism with well-saturated magnetic hysteresis loops and a maximum coercivity field of 1280 Oe was observed below 12 K. The ferromagnetic resonance measurements revealed that the incorporation of aliovalent ions modulates the carrier concentration and plays an essential role in realizing the ferromagnetism in dilute magnetic halide perovskites. Magnetic ions are proposed to interact through itinerant charge carriers to achieve ferromagnetic coupling. Our work provides a new avenue for the development of solution-processable magnetic semiconductors.
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Affiliation(s)
- Zhongwei Chen
- Department of Chemistry, The Hong Kong University of Science and Technology, Kowloon, Hong Kong (SAR) 999077, People's Republic of China
| | - Chunmei Wang
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Jie Xue
- Department of Chemistry, The Hong Kong University of Science and Technology, Kowloon, Hong Kong (SAR) 999077, People's Republic of China
| | - Jian Chen
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Lingling Mao
- Department of Chemistry, Southern University of Science and Technology, Shenzhen 518055, People's Republic of China
| | - Haoliang Liu
- Guangdong Provincial Key Laboratory of Semiconductor, Optoelectronic Materials and Intelligent Photonic Systems, School of Science, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, People's Republic of China
| | - Haipeng Lu
- Department of Chemistry, The Hong Kong University of Science and Technology, Kowloon, Hong Kong (SAR) 999077, People's Republic of China
- Energy Institute, The Hong Kong University of Science and Technology, Kowloon, Hong Kong (SAR) 999077, People's Republic of China
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10
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Mattiat H, Schneider L, Reiser P, Poggio M, Sahafi P, Jordan A, Budakian R, Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Kondratev OA, Tokmachev AM, Storchak VG. Mapping the phase-separated state in a 2D magnet. NANOSCALE 2024; 16:5302-5312. [PMID: 38372414 DOI: 10.1039/d3nr06550b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/20/2024]
Abstract
Intrinsic 2D magnets have recently been established as a playground for studies on fundamentals of magnetism, quantum phases, and spintronic applications. The inherent instability at low dimensionality often results in coexistence and/or competition of different magnetic orders. Such instability of magnetic ordering may manifest itself as phase-separated states. In 4f 2D materials, magnetic phase separation is expressed in various experiments; however, the experimental evidence is circumstantial. Here, we employ a high-sensitivity MFM technique to probe the spatial distribution of magnetic states in the paradigmatic 4f 2D ferromagnet EuGe2. Below the ferromagnetic transition temperature, we discover the phase-separated state and follow its evolution with temperature and magnetic field. The characteristic length-scale of magnetic domains amounts to hundreds of nanometers. These observations strongly shape our understanding of the magnetic states in 2D materials at the monolayer limit and contribute to engineering of ultra-compact spintronics.
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Affiliation(s)
- Hinrich Mattiat
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Lukas Schneider
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Patrick Reiser
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Martino Poggio
- Department of Physics & Swiss Nanoscience Institute, University of Basel, 4056 Basel, Switzerland.
| | - Pardis Sahafi
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Andrew Jordan
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Raffi Budakian
- Department of Physics and Astronomy & Institute for Quantum Computing, University of Waterloo, Waterloo, ON N2L 3G1, Canada
| | - Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, 123182 Moscow, Russia.
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11
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Boix-Constant C, Jenkins S, Rama-Eiroa R, Santos EJG, Mañas-Valero S, Coronado E. Multistep magnetization switching in orthogonally twisted ferromagnetic monolayers. NATURE MATERIALS 2024; 23:212-218. [PMID: 38036623 PMCID: PMC10837074 DOI: 10.1038/s41563-023-01735-6] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/13/2023] [Accepted: 10/13/2023] [Indexed: 12/02/2023]
Abstract
The advent of twist engineering in two-dimensional crystals enables the design of van der Waals heterostructures with emergent properties. In the case of magnets, this approach can afford artificial antiferromagnets with tailored spin arrangements. Here we fabricate an orthogonally twisted bilayer by twisting two CrSBr ferromagnetic monolayers with an easy-axis in-plane spin anisotropy by 90°. The magnetotransport properties reveal multistep magnetization switching with a magnetic hysteresis opening, which is absent in the pristine case. By tuning the magnetic field, we modulate the remanent state and coercivity and select between hysteretic and non-hysteretic magnetoresistance scenarios. This complexity pinpoints spin anisotropy as a key aspect in twisted magnetic superlattices. Our results highlight control over the magnetic properties in van der Waals heterostructures, leading to a variety of field-induced phenomena and opening a fruitful playground for creating desired magnetic symmetries and manipulating non-collinear magnetic configurations.
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Affiliation(s)
- Carla Boix-Constant
- Instituto de Ciencia Molecular (ICMol) - Universitat de València, Paterna, Spain
| | - Sarah Jenkins
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, UK
| | - Ricardo Rama-Eiroa
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, UK
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Spain
| | - Elton J G Santos
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, The University of Edinburgh, Edinburgh, UK.
- Donostia International Physics Center (DIPC), Donostia-San Sebastián, Spain.
- Higgs Centre for Theoretical Physics, The University of Edinburgh, Edinburgh, UK.
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol) - Universitat de València, Paterna, Spain.
- Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands.
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol) - Universitat de València, Paterna, Spain.
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12
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Panda J, Sahu S, Haider G, Thakur MK, Mosina K, Velický M, Vejpravova J, Sofer Z, Kalbáč M. Polarization-Resolved Position-Sensitive Self-Powered Binary Photodetection in Multilayer Janus CrSBr. ACS APPLIED MATERIALS & INTERFACES 2024; 16:1033-1043. [PMID: 38147583 PMCID: PMC10788859 DOI: 10.1021/acsami.3c13552] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 12/10/2023] [Accepted: 12/10/2023] [Indexed: 12/28/2023]
Abstract
Recent progress in polarization-resolved photodetection based on low-symmetry 2D materials has formed the basis of cutting-edge optoelectronic devices, including quantum optical communication, 3D image processing, and sensing applications. Here, we report an optical polarization-resolving photodetector (PD) fabricated from multilayer semiconducting CrSBr single crystals with high structural anisotropy. We have demonstrated self-powered photodetection due to the formation of Schottky junctions at the Au-CrSBr interfaces, which also caused the photocurrent to display a position-sensitive and binary nature. The self-biased CrSBr PD showed a photoresponsivity of ∼0.26 mA/W with a detectivity of 3.4 × 108 Jones at 514 nm excitation of fluency (0.42 mW/cm2) under ambient conditions. The optical polarization-induced photoresponse exhibits a large dichroic ratio of 3.4, while the polarization is set along the a- and the b-axes of single-crystalline CrSBr. The PD also showed excellent stability, retaining >95% of the initial photoresponsivity in ambient conditions for more than five months without encapsulation. Thus, we demonstrate CrSBr as a fascinating material for ultralow-powered optical polarization-resolving optoelectronic devices for cutting-edge technology.
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Affiliation(s)
- Jaganandha Panda
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Satyam Sahu
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
- Department
of Biophysics, Chemical and Macromolecular Physics, Faculty of Mathematics
and Physics, Charles University, Ke Karlovu 3, 121 16 Prague 2, Czech Republic
| | - Golam Haider
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Mukesh Kumar Thakur
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Matěj Velický
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
| | - Jana Vejpravova
- Department
of Condensed Matter Physics, Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
| | - Zdeněk Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Martin Kalbáč
- J.
Heyrovský Institute of Physical Chemistry, Dolejskova 3, 182 23 Prague 8, Czech Republic
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13
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Ruta FL, Zhang S, Shao Y, Moore SL, Acharya S, Sun Z, Qiu S, Geurs J, Kim BSY, Fu M, Chica DG, Pashov D, Xu X, Xiao D, Delor M, Zhu XY, Millis AJ, Roy X, Hone JC, Dean CR, Katsnelson MI, van Schilfgaarde M, Basov DN. Hyperbolic exciton polaritons in a van der Waals magnet. Nat Commun 2023; 14:8261. [PMID: 38086835 PMCID: PMC10716151 DOI: 10.1038/s41467-023-44100-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/28/2023] [Accepted: 11/30/2023] [Indexed: 02/29/2024] Open
Abstract
Exciton polaritons are quasiparticles of photons coupled strongly to bound electron-hole pairs, manifesting as an anti-crossing light dispersion near an exciton resonance. Highly anisotropic semiconductors with opposite-signed permittivities along different crystal axes are predicted to host exotic modes inside the anti-crossing called hyperbolic exciton polaritons (HEPs), which confine light subdiffractionally with enhanced density of states. Here, we show observational evidence of steady-state HEPs in the van der Waals magnet chromium sulfide bromide (CrSBr) using a cryogenic near-infrared near-field microscope. At low temperatures, in the magnetically-ordered state, anisotropic exciton resonances sharpen, driving the permittivity negative along one crystal axis and enabling HEP propagation. We characterize HEP momentum and losses in CrSBr, also demonstrating coupling to excitonic sidebands and enhancement by magnetic order: which boosts exciton spectral weight via wavefunction delocalization. Our findings open new pathways to nanoscale manipulation of excitons and light, including routes to magnetic, nonlocal, and quantum polaritonics.
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Affiliation(s)
- Francesco L Ruta
- Department of Physics, Columbia University, New York, NY, USA.
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, NY, USA.
| | - Shuai Zhang
- Department of Physics, Columbia University, New York, NY, USA.
| | - Yinming Shao
- Department of Physics, Columbia University, New York, NY, USA
| | - Samuel L Moore
- Department of Physics, Columbia University, New York, NY, USA
| | | | - Zhiyuan Sun
- Department of Physics, Columbia University, New York, NY, USA
| | - Siyuan Qiu
- Department of Physics, Columbia University, New York, NY, USA
| | - Johannes Geurs
- Department of Physics, Columbia University, New York, NY, USA
- Columbia Nano Initiative, Columbia University, New York, NY, USA
| | - Brian S Y Kim
- Department of Physics, Columbia University, New York, NY, USA
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Matthew Fu
- Department of Physics, Columbia University, New York, NY, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Dimitar Pashov
- Theory and Simulation of Condensed Matter, King's College London, London, UK
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Milan Delor
- Department of Chemistry, Columbia University, New York, NY, USA
| | - X-Y Zhu
- Department of Chemistry, Columbia University, New York, NY, USA
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, NY, USA
- Center for Computational Quantum Physics, Flatiron Institute, New York, NY, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, USA
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, NY, USA
| | - Cory R Dean
- Department of Physics, Columbia University, New York, NY, USA
| | - Mikhail I Katsnelson
- Institute for Molecules and Materials, Radboud University, Nijmegen, Netherlands
| | | | - D N Basov
- Department of Physics, Columbia University, New York, NY, USA.
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14
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Serati de Brito C, Faria Junior PE, Ghiasi TS, Ingla-Aynés J, Rabahi CR, Cavalini C, Dirnberger F, Mañas-Valero S, Watanabe K, Taniguchi T, Zollner K, Fabian J, Schüller C, van der Zant HSJ, Gobato YG. Charge Transfer and Asymmetric Coupling of MoSe 2 Valleys to the Magnetic Order of CrSBr. NANO LETTERS 2023. [PMID: 38019289 DOI: 10.1021/acs.nanolett.3c03431] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/30/2023]
Abstract
van der Waals heterostructures composed of two-dimensional (2D) transition metal dichalcogenides and vdW magnetic materials offer an intriguing platform to functionalize valley and excitonic properties in nonmagnetic TMDs. Here, we report magneto photoluminescence (PL) investigations of monolayer (ML) MoSe2 on the layered A-type antiferromagnetic (AFM) semiconductor CrSBr under different magnetic field orientations. Our results reveal a clear influence of the CrSBr magnetic order on the optical properties of MoSe2, such as an anomalous linear-polarization dependence, changes of the exciton/trion energies, a magnetic-field dependence of the PL intensities, and a valley g-factor with signatures of an asymmetric magnetic proximity interaction. Furthermore, first-principles calculations suggest that MoSe2/CrSBr forms a broken-gap (type-III) band alignment, facilitating charge transfer processes. The work establishes that antiferromagnetic-nonmagnetic interfaces can be used to control the valley and excitonic properties of TMDs, relevant for the development of opto-spintronics devices.
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Affiliation(s)
- Caique Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Talieh S Ghiasi
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Josep Ingla-Aynés
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - César Ricardo Rabahi
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Camila Cavalini
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
| | - Florian Dirnberger
- Institute of Applied Physics and Würzburg-Dresden Cluster of Excellence ct.qmat, Technische Universität, 01069 Dresden, Germany
| | - Samuel Mañas-Valero
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna 46980, Spain
| | - Kenji Watanabe
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, D-93040 Regensburg, Germany
| | - Christian Schüller
- Institut für Experimentelle und Angewandte Physik, Universität Regensburg, D-93040 Regensburg, Germany
| | - Herre S J van der Zant
- Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands
| | - Yara Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, SP 13565-905, Brazil
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15
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Jia Y, Gao Y, Liu Y. First-principles study of two-dimensional half-metallic ferromagnetism in CrSiSe 4monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:075701. [PMID: 37922560 DOI: 10.1088/1361-648x/ad098e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2023] [Accepted: 11/03/2023] [Indexed: 11/07/2023]
Abstract
Two-dimensional (2D) ferromagnetic (FM) half-metallic materials have attracted intensive attention due to their unique electronic and magnetic properties and potential applications in spintronic devices. In this study, we predicted a stable 2D half-metallic material monolayer CrSiSe4using first-principles density functional theory. The structure, electronic and magnetic properties were systematically studied. The calculations show that the monolayer CrSiSe4is a dynamically stable FM half-metallic material. The spin-dependent transport properties and the Curie temperature up to 239 K are demonstrated. The spin band gap of monolayer CrSiSe4was about 0.83 eV by the the Heyd-Scuseria-Ernzerhof function calculation. The magnetic anisotropy energy of each Cr atom in the monolayer of CrSiSe4is-552.3μeV. When the applied biaxial tensile strain is greater than 2%, monolayer CrSiSe4spin-up conduction band and valence band will show a band gap at the Fermi level, and the electronic properties change from a half-metal to a semiconductor. Thus, the monolayer CrSiSe4can provide an ideal candidate material for exploring 2D magnetic and spintronics experiments.
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Affiliation(s)
- Yuanyuan Jia
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yan Gao
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
| | - Yong Liu
- State Key Laboratory of Metastable Materials Science and Technology & Key Laboratory for Microstructural Material Physics of Hebei Province, School of Science, Yanshan University, Qinhuangdao 066004, People's Republic of China
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16
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Jo J, Peisen Y, Yang H, Mañas-Valero S, Baldoví JJ, Lu Y, Coronado E, Casanova F, Bergeret FS, Gobbi M, Hueso LE. Local control of superconductivity in a NbSe 2/CrSBr van der Waals heterostructure. Nat Commun 2023; 14:7253. [PMID: 37945570 PMCID: PMC10636142 DOI: 10.1038/s41467-023-43111-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Accepted: 10/31/2023] [Indexed: 11/12/2023] Open
Abstract
Two-dimensional magnets and superconductors are emerging as tunable building-blocks for quantum computing and superconducting spintronic devices, and have been used to fabricate all two-dimensional versions of traditional devices, such as Josephson junctions. However, novel devices enabled by unique features of two-dimensional materials have not yet been demonstrated. Here, we present NbSe2/CrSBr van der Waals superconducting spin valves that exhibit infinite magnetoresistance and nonreciprocal charge transport. These responses arise from a unique metamagnetic transition in CrSBr, which controls the presence of localized stray fields suitably oriented to suppress the NbSe2 superconductivity in nanoscale regions and to break time reversal symmetry. Moreover, by integrating different CrSBr crystals in a lateral heterostructure, we demonstrate a superconductive spin valve characterized by multiple stable resistance states. Our results show how the unique physical properties of layered materials enable the realization of high-performance quantum devices based on novel working principles.
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Affiliation(s)
- Junhyeon Jo
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
| | - Yuan Peisen
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Haozhe Yang
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Yao Lu
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Paterna, Spain
| | - Fèlix Casanova
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain
| | - F Sebastian Bergeret
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain
- Donostia International Physics Center (DIPC), E-20018, Donostia-San Sebastián, Spain
| | - Marco Gobbi
- Centro de Física de Materiales (CFM-MPC) Centro Mixto CSIC-UPV/EHU, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
| | - Luis E Hueso
- CIC nanoGUNE BRTA, Donostia-San Sebastian, Spain.
- IKERBASQUE, Basque Foundation for Science, Bilbao, Spain.
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17
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Zur Y, Noah A, Boix-Constant C, Mañas-Valero S, Fridman N, Rama-Eiroa R, Huber ME, Santos EJG, Coronado E, Anahory Y. Magnetic Imaging and Domain Nucleation in CrSBr Down to the 2D Limit. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2307195. [PMID: 37702506 DOI: 10.1002/adma.202307195] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Revised: 08/31/2023] [Indexed: 09/14/2023]
Abstract
Recent advancements in 2D materials have revealed the potential of van der Waals magnets, and specifically of their magnetic anisotropy that allows applications down to the 2D limit. Among these materials, CrSBr has emerged as a promising candidate, because its intriguing magnetic and electronic properties have appeal for both fundamental and applied research in spintronics or magnonics. In this work, nano-SQUID-on-tip (SOT) microscopy is used to obtain direct magnetic imaging of CrSBr flakes with thicknesses ranging from monolayer (N = 1) to few-layer (N = 5). The ferromagnetic order is preserved down to the monolayer, while the antiferromagnetic coupling of the layers starts from the bilayer case. For odd layers, at zero applied magnetic field, the stray field resulting from the uncompensated layer is directly imaged. The progressive spin reorientation along the out-of-plane direction (hard axis) is also measured with a finite applied magnetic field, allowing evaluation of the anisotropy constant, which remains stable down to the monolayer and is close to the bulk value. Finally, by selecting the applied magnetic field protocol, the formation of Néel magnetic domain walls is observed down to the single-layer limit.
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Affiliation(s)
- Yishay Zur
- The Racah Institute of Physics, The Hebrew University, Jerusalem, 9190401, Israel
- Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Avia Noah
- The Racah Institute of Physics, The Hebrew University, Jerusalem, 9190401, Israel
- Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Carla Boix-Constant
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Nofar Fridman
- The Racah Institute of Physics, The Hebrew University, Jerusalem, 9190401, Israel
- Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel
| | - Ricardo Rama-Eiroa
- Donostia International Physics Center (DIPC), Basque Country, Donostia-San Sebastián, 20018, Spain
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, University of Edinburgh, Edinburgh, EH93FD, UK
| | - Martin E Huber
- Departments of Physics and Electrical Engineering, University of Colorado Denver, Denver, CO, 80217, USA
| | - Elton J G Santos
- Donostia International Physics Center (DIPC), Basque Country, Donostia-San Sebastián, 20018, Spain
- Institute for Condensed Matter Physics and Complex Systems, School of Physics and Astronomy, University of Edinburgh, Edinburgh, EH93FD, UK
- Higgs Centre for Theoretical Physics, University of Edinburgh, Edinburgh, EH93FD, UK
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Yonathan Anahory
- The Racah Institute of Physics, The Hebrew University, Jerusalem, 9190401, Israel
- Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel
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18
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Liu S, Malik IA, Zhang VL, Yu T. Lightning the Spin: Harnessing the Potential of 2D Magnets in Opto-Spintronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2306920. [PMID: 37905890 DOI: 10.1002/adma.202306920] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2023] [Revised: 09/20/2023] [Indexed: 11/02/2023]
Abstract
Since the emergence of 2D magnets in 2017, the diversity of these materials has greatly expanded. Their 2D nature (atomic-scale thickness) endows these magnets with strong magnetic anisotropy, layer-dependent and switchable magnetic order, and quantum-confined quasiparticles, which distinguish them from conventional 3D magnetic materials. Moreover, the 2D geometry facilitates light incidence for opto-spintronic applications and potential on-chip integration. In analogy to optoelectronics based on optical-electronic interactions, opto-spintronics use light-spin interactions to process spin information stored in the solid state. In this review, opto-spintronics is divided into three types with respect to the wavelengths of radiation interacting with 2D magnets: 1) GHz (microwave) to THz (mid-infrared), 2) visible, and 3) UV to X-rays. It is focused on the recent research advancements on the newly discovered mechanisms of light-spin interactions in 2D magnets and introduces the potential design of novel opto-spintronic applications based on these interactions.
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Affiliation(s)
- Sheng Liu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | | | - Vanessa Li Zhang
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ting Yu
- School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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19
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Cham TMJ, Dorrian RJ, Zhang XS, Dismukes AH, Chica DG, May AF, Roy X, Muller DA, Ralph DC, Luo YK. Exchange Bias Between van der Waals Materials: Tilted Magnetic States and Field-Free Spin-Orbit-Torque Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305739. [PMID: 37800466 DOI: 10.1002/adma.202305739] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 09/06/2023] [Indexed: 10/07/2023]
Abstract
Magnetic van der Waals heterostructures provide a unique platform to study magnetism and spintronics device concepts in the 2D limit. Here, studies of exchange bias from the van der Waals antiferromagnet CrSBr acting on the van der Waals ferromagnet Fe3 GeTe2 (FGT) are reported. The orientation of the exchange bias is along the in-plane easy axis of CrSBr, perpendicular to the out-of-plane anisotropy of the FGT, inducing a strongly tilted magnetic configuration in the FGT. Furthermore, the in-plane exchange bias provides sufficient symmetry breaking to allow deterministic spin-orbit torque switching of the FGT in CrSBr/FGT/Pt samples at zero applied magnetic field. A minimum thickness of the CrSBr of >10 nm is needed to provide a non-zero exchange bias at 30 K.
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Affiliation(s)
| | | | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Daniel G Chica
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - Andrew F May
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, NY, 10027, USA
| | - David A Muller
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Daniel C Ralph
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, NY, 14850, USA
- Kavli Institute at Cornell, Ithaca, NY, 14853, USA
- Department of Physics and Astronomy, University of Southern California, Los Angeles, CA, 90089, USA
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20
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Rizzo DJ, Zhang J, Jessen BS, Ruta FL, Cothrine M, Yan J, Mandrus DG, Nagler SE, Taniguchi T, Watanabe K, Fogler MM, Pasupathy AN, Millis AJ, Rubio A, Hone JC, Dean CR, Basov DN. Polaritonic Probe of an Emergent 2D Dipole Interface. NANO LETTERS 2023; 23:8426-8435. [PMID: 37494638 DOI: 10.1021/acs.nanolett.3c01611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
The use of work-function-mediated charge transfer has recently emerged as a reliable route toward nanoscale electrostatic control of individual atomic layers. Using α-RuCl3 as a 2D electron acceptor, we are able to induce emergent nano-optical behavior in hexagonal boron nitride (hBN) that arises due to interlayer charge polarization. Using scattering-type scanning near-field optical microscopy (s-SNOM), we find that a thin layer of α-RuCl3 adjacent to an hBN slab reduces the propagation length of hBN phonon polaritons (PhPs) in significant excess of what can be attributed to intrinsic optical losses. Concomitant nano-optical spectroscopy experiments reveal a novel resonance that aligns energetically with the region of excess PhP losses. These experimental observations are elucidated by first-principles density-functional theory and near-field model calculations, which show that the formation of a large interfacial dipole suppresses out-of-plane PhP propagation. Our results demonstrate the potential utility of charge-transfer heterostructures for tailoring optoelectronic properties of 2D insulators.
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Affiliation(s)
- Daniel J Rizzo
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Jin Zhang
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany
| | - Bjarke S Jessen
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Francesco L Ruta
- Department of Physics, Columbia University, New York, New York 10027, United States
- Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States
| | - Matthew Cothrine
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Jiaqiang Yan
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David G Mandrus
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Stephen E Nagler
- Neutron Scattering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Michael M Fogler
- Department of Physics, University of California San Diego, La Jolla, California 92093, United States
| | - Abhay N Pasupathy
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - Andrew J Millis
- Department of Physics, Columbia University, New York, New York 10027, United States
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
| | - Angel Rubio
- Theory Department, Max Planck Institute for Structure and Dynamics of Matter and Center for Free-Electron Laser Science, 22761 Hamburg, Germany
- Center for Computational Quantum Physics, Flatiron Institute, New York, New York 10010, United States
- Nano-Bio Spectroscopy Group, Universidad del País Vasco UPV/EHU, San Sebastián 20018, Spain
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Cory R Dean
- Department of Physics, Columbia University, New York, New York 10027, United States
| | - D N Basov
- Department of Physics, Columbia University, New York, New York 10027, United States
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21
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Long F, Ghorbani-Asl M, Mosina K, Li Y, Lin K, Ganss F, Hübner R, Sofer Z, Dirnberger F, Kamra A, Krasheninnikov AV, Prucnal S, Helm M, Zhou S. Ferromagnetic Interlayer Coupling in CrSBr Crystals Irradiated by Ions. NANO LETTERS 2023; 23:8468-8473. [PMID: 37669544 PMCID: PMC10540254 DOI: 10.1021/acs.nanolett.3c01920] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/23/2023] [Revised: 08/31/2023] [Indexed: 09/07/2023]
Abstract
Layered magnetic materials are becoming a major platform for future spin-based applications. Particularly, the air-stable van der Waals compound CrSBr is attracting considerable interest due to its prominent magneto-transport and magneto-optical properties. In this work, we observe a transition from antiferromagnetic to ferromagnetic behavior in CrSBr crystals exposed to high-energy, non-magnetic ions. Already at moderate fluences, ion irradiation induces a remanent magnetization with hysteresis adapting to the easy-axis anisotropy of the pristine magnetic order up to a critical temperature of 110 K. Structure analysis of the irradiated crystals in conjunction with density functional theory calculations suggests that the displacement of constituent atoms due to collisions with ions and the formation of interstitials favors ferromagnetic order between the layers.
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Affiliation(s)
- Fangchao Long
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Mahdi Ghorbani-Asl
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Kseniia Mosina
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Yi Li
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Kaiman Lin
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- University
of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai
Jiao Tong University, Shanghai, 200240, China
| | - Fabian Ganss
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - René Hübner
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Zdenek Sofer
- Department
of Inorganic Chemistry, University of Chemistry
and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Florian Dirnberger
- Institute
of Applied Physics and Würzburg-Dresden Cluster of Excellence
ct.qmat, Technische Universität Dresden, 01069 Dresden, Germany
| | - Akashdeep Kamra
- Condensed
Matter Physics Center (IFIMAC) and Departamento de Física Teórica
de la Materia Condensada, Universidad Autónoma
de Madrid, Ciudad Universitaria
de Cantoblanco, 28049, Madrid, Spain
| | - Arkady V. Krasheninnikov
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Slawomir Prucnal
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Manfred Helm
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
- TU
Dresden, 01062 Dresden, Germany
| | - Shengqiang Zhou
- Helmholtz-Zentrum
Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, Bautzner Landstrasse 400, 01328 Dresden, Germany
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22
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Teh S, Jeng HT. Magnetoelastic and Magnetoelectric Coupling in Two-Dimensional Nitride MXenes: A Density Functional Theory Study. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2644. [PMID: 37836286 PMCID: PMC10574495 DOI: 10.3390/nano13192644] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/31/2023] [Revised: 09/22/2023] [Accepted: 09/23/2023] [Indexed: 10/15/2023]
Abstract
Two-dimensional multiferroic (2D) materials have garnered significant attention due to their potential in high-density, low-power multistate storage and spintronics applications. MXenes, a class of 2D transition metal carbides and nitrides, were first discovered in 2011, and have become the focus of research in various disciplines. Our study, utilizing first-principles calculations, examines the lattice structures, and electronic and magnetic properties of nitride MXenes with intrinsic band gaps, including V2NF2, V2NO2, Cr2NF2, Mo2NO2, Mo2NF2, and Mn2NO2. These nitride MXenes exhibit orbital ordering, and in some cases the orbital ordering induces magnetoelastic coupling or magnetoelectric coupling. Most notably, Cr2NF2 is a ferroelastic material with a spiral magnetic ordered phase, and the spiral magnetization propagation vector is coupled with the direction of ferroelastic strain. The ferroelectric phase can exist as an excited state in V2NO2, Cr2NF2, and Mo2NF2, with their magnetic order being coupled with polar displacements through orbital ordering. Our results also suggest that similar magnetoelectric coupling effects persist in the Janus MXenes V8N4O7F, Cr8N4F7O, and Mo8N4F7O. Remarkably, different phases of Mo8N4F7O, characterized by orbital ordering rearrangements, can be switched by applying external strain or an external electric field. Overall, our theoretical findings suggest that nitride MXenes hold promise as 2D multiferroic materials.
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Affiliation(s)
- Sukhito Teh
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Horng-Tay Jeng
- Department of Physics, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Physics, Academia Sinica, Taipei 11529, Taiwan
- Physics Division, National Center for Theoretical Sciences, Taipei 10617, Taiwan
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23
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Kong Z, Kaminsky CJ, Groschner CK, Murphy RA, Yu Y, Husremović S, Xie LS, Erodici MP, Kim RS, Yano J, Bediako DK. Near Room-Temperature Intrinsic Exchange Bias in an Fe Intercalated ZrSe 2 Spin Glass. J Am Chem Soc 2023; 145:20041-20052. [PMID: 37646536 PMCID: PMC10510322 DOI: 10.1021/jacs.3c06967] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/01/2023] [Indexed: 09/01/2023]
Abstract
Some magnetic systems display a shift in the center of their magnetic hysteresis loop away from zero field, a phenomenon termed exchange bias. Despite the extensive use of the exchange bias effect, particularly in magnetic multilayers, for the design of spin-based memory/electronics devices, a comprehensive mechanistic understanding of this effect remains a longstanding problem. Recent work has shown that disorder-induced spin frustration might play a key role in exchange bias, suggesting new materials design approaches for spin-based electronic devices that harness this effect. Here, we design a spin glass with strong spin frustration induced by magnetic disorder by exploiting the distinctive structure of Fe intercalated ZrSe2, where Fe(II) centers are shown to occupy both octahedral and tetrahedral interstitial sites and to distribute between ZrSe2 layers without long-range structural order. Notably, we observe behavior consistent with a magnetically frustrated and multidegenerate ground state in these Fe0.17ZrSe2 single crystals, which persists above room temperature. Moreover, this magnetic frustration leads to a robust and tunable exchange bias up to 250 K. These results not only offer important insights into the effects of magnetic disorder and frustration in magnetic materials generally, but also highlight as design strategy the idea that a large exchange bias can arise from an inhomogeneous microscopic environment without discernible long-range magnetic order. In addition, these results show that intercalated TMDs like Fe0.17ZrSe2 hold potential for spintronic technologies that can achieve room temperature applications.
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Affiliation(s)
- Zhizhi Kong
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Corey J. Kaminsky
- Molecular
Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Catherine K. Groschner
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Ryan A. Murphy
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Yun Yu
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Samra Husremović
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Lilia S. Xie
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - Matthew P. Erodici
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
| | - R. Soyoung Kim
- Chemical
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
| | - Junko Yano
- Molecular
Biophysics and Integrated Bioimaging Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - D. Kwabena Bediako
- Department
of Chemistry, University of California, Berkeley, California 94720, United States
- Chemical
Sciences Division, Lawrence Berkeley National
Laboratory, Berkeley, California 94720, United States
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24
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Wang B, Wu Y, Bai Y, Shi P, Zhang G, Zhang Y, Liu C. Origin and regulation of triaxial magnetic anisotropy in the ferromagnetic semiconductor CrSBr monolayer. NANOSCALE 2023; 15:13402-13410. [PMID: 37540039 DOI: 10.1039/d3nr02518g] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Magnetic anisotropy plays a vital role in stabilizing the long-range magnetic order of two-dimensional ferromagnetic systems. In this work, using the first-principles method, we systematically explored the triaxial magnetic anisotropic properties of a ferromagnetic semiconductor CrSBr monolayer, which is recently exfoliated from its bulk. Further analysis shows that the triaxial magnetic anisotropic properties originate from the coexistence of the magnetic dipole-dipole interaction (shape anisotropy) and the spin-orbit coupling interaction (magnetocrystalline anisotropy). Interestingly, the shape anisotropy, which has been neglected in most previous works, dominates over the magnetocrystalline anisotropy. Besides, the experimental Curie temperature of the CrSBr monolayer is well reproduced using Monte Carlo simulations. What is more, the easy magnetic axes and ferromagnetism in the CrSBr monolayer can be manipulated by strains and are relatively more susceptible to the uniaxial strain in the x direction. Our study not only explains the mechanism of triaxial magnetic anisotropy of the CrSBr monolayer, but also sheds light on how to tune the magnetic anisotropy and Curie temperature in ferromagnetic monolayers.
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Affiliation(s)
- Bing Wang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yaxuan Wu
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yihang Bai
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Puyuan Shi
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Guangbiao Zhang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Yungeng Zhang
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
| | - Chang Liu
- Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University, Kaifeng 475004, People's Republic of China.
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25
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Marques-Moros F, Boix-Constant C, Mañas-Valero S, Canet-Ferrer J, Coronado E. Interplay between Optical Emission and Magnetism in the van der Waals Magnetic Semiconductor CrSBr in the Two-Dimensional Limit. ACS NANO 2023; 17:13224-13231. [PMID: 37442121 PMCID: PMC10863932 DOI: 10.1021/acsnano.3c00375] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/12/2023] [Accepted: 07/06/2023] [Indexed: 07/15/2023]
Abstract
The van der Waals semiconductor metamagnet CrSBr offers an ideal platform for studying the interplay between optical and magnetic properties in the two-dimensional limit. Here, we carried out an exhaustive optical characterization of this material by means of temperature- and magnetic-field-dependent photoluminescence (PL) on flakes of different thicknesses down to the monolayer. We found a characteristic emission peak that is quenched upon switching the ferromagnetic layers from an antiparallel to a parallel configuration and exhibits a temperature dependence different from that of the peaks commonly ascribed to excitons. The contribution of this peak to the PL is boosted around 30-40 K, coinciding with the hidden order magnetic transition temperature. Our findings reveal the connection between the optical and magnetic properties via the ionization of magnetic donor vacancies. This behavior enables a useful tool for the optical reading of the magnetic states in atomically thin layers of CrSBr and shows the potential of the design of 2D heterostructures with magnetic and excitonic properties.
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Affiliation(s)
| | - Carla Boix-Constant
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Josep Canet-Ferrer
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular
(ICMol), Universitat de València, 46980, Paterna, Spain
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26
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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27
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Intrinsic exchange bias state in silicene and germanene materials EuX 2. NANOSCALE HORIZONS 2023; 8:803-811. [PMID: 36987577 DOI: 10.1039/d3nh00009e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/31/2023]
Abstract
2D magnets have recently emerged as a host for unconventional phases and related phenomena. The prominence of 2D magnetism stems from its high amenability to external stimuli and structural variations. The low dimensionality facilitates competition between magnetic orders which may give rise to exchange bias, in particular in magnetic heterostructures. Here, we propose a strategy for the search of exchange bias state in 2D individual compounds. We track the evolution of magnetic orders driven by the number of monolayers in a system exhibiting antiferromagnetism in the multilayer and ferromagnetism in the monolayer limit. The material, EuSi2, has the structure of multilayer silicene intercalated by Eu. A strong intrinsic exchange bias effect accompanies the dimensional crossover. Comparison with silicene-based GdSi2 and germanene-based EuGe2 suggests the competition between magnetic orders to be a common property of this class of materials that may be useful in spintronic applications.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia.
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28
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Klein J, Pingault B, Florian M, Heißenbüttel MC, Steinhoff A, Song Z, Torres K, Dirnberger F, Curtis JB, Weile M, Penn A, Deilmann T, Dana R, Bushati R, Quan J, Luxa J, Sofer Z, Alù A, Menon VM, Wurstbauer U, Rohlfing M, Narang P, Lončar M, Ross FM. The Bulk van der Waals Layered Magnet CrSBr is a Quasi-1D Material. ACS NANO 2023; 17:5316-5328. [PMID: 36926838 DOI: 10.1021/acsnano.2c07316] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Correlated quantum phenomena in one-dimensional (1D) systems that exhibit competing electronic and magnetic order are of strong interest for the study of fundamental interactions and excitations, such as Tomonaga-Luttinger liquids and topological orders and defects with properties completely different from the quasiparticles expected in their higher-dimensional counterparts. However, clean 1D electronic systems are difficult to realize experimentally, particularly for magnetically ordered systems. Here, we show that the van der Waals layered magnetic semiconductor CrSBr behaves like a quasi-1D material embedded in a magnetically ordered environment. The strong 1D electronic character originates from the Cr-S chains and the combination of weak interlayer hybridization and anisotropy in effective mass and dielectric screening, with an effective electron mass ratio of mXe/mYe ∼ 50. This extreme anisotropy experimentally manifests in strong electron-phonon and exciton-phonon interactions, a Peierls-like structural instability, and a Fano resonance from a van Hove singularity of similar strength to that of metallic carbon nanotubes. Moreover, because of the reduced dimensionality and interlayer coupling, CrSBr hosts spectrally narrow (1 meV) excitons of high binding energy and oscillator strength that inherit the 1D character. Overall, CrSBr is best understood as a stack of weakly hybridized monolayers and appears to be an experimentally attractive candidate for the study of exotic exciton and 1D-correlated many-body physics in the presence of magnetic order.
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Affiliation(s)
- Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Benjamin Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- QuTech, Delft University of Technology, 2600 GA Delft, The Netherlands
| | - Matthias Florian
- Department of Electrical and Computer Engineering, Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | | | - Alexander Steinhoff
- Institut für Theoretische Physik, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany
- Bremen Center for Computational Materials Science, University of Bremen, 28359 Bremen, Germany
| | - Zhigang Song
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Kierstin Torres
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Florian Dirnberger
- Department of Physics, City College of New York, New York, New York 10031, United States
| | - Jonathan B Curtis
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- College of Letters and Science, UCLA, Los Angeles, California 90095 United States
| | - Mads Weile
- Center for Visualizing Catalytic Processes (VISION), Department of Physics, Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark
| | - Aubrey Penn
- MIT.nano, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Thorsten Deilmann
- Institut für Festkörpertheorie, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
| | - Rami Dana
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Rezlind Bushati
- Department of Physics, City College of New York, New York, New York 10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York 10016, United States
| | - Jiamin Quan
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York 10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York 10026, United States
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28 Prague 6, Czech Republic
| | - Andrea Alù
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York 10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York 10026, United States
| | - Vinod M Menon
- Department of Physics, City College of New York, New York, New York 10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York 10016, United States
| | - Ursula Wurstbauer
- Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany
| | - Michael Rohlfing
- Institut für Festkörpertheorie, Westfälische Wilhelms-Universität Münster, 48149 Münster, Germany
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
- College of Letters and Science, UCLA, Los Angeles, California 90095 United States
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138, United States
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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29
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Yang J, Gao B, Liu W, Du J, Xu Q. Supercritical CO 2 -induced New Chemical Bond of C-O-Si in Graphdiyne to Achieve Robust Room-Temperature Ferromagnetism. Chemphyschem 2023; 24:e202200793. [PMID: 36806422 DOI: 10.1002/cphc.202200793] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2022] [Revised: 02/09/2023] [Accepted: 02/13/2023] [Indexed: 02/21/2023]
Abstract
The realization of ferromagnetic ordering of two-dimensional (2D) carbon material graphdiyne (GDY) has attracted great attention due to its promising application in spin semiconductor devices. However, the absence of localized spins makes the pristine GDY intrinsically nonferromagnetic. Herein, we report the realization of robust room-temperature (RT) ferromagnetism (FM) with Curie temperature (TC ) up to 325 K for GDY Nanosheets (GDYNs) by supercritical CO2 (SC CO2 ). Experimental and theoretical calculations reveal that the new chemical bond of C-O-Si can be formed because of the unique effect of SC CO2 , which help to enhance the charge transfer and generates long-range ferromagnetic order. The RT saturation magnetization (MS ) reaches 1.125 emu/g, which is much higher than that of carbon-based materials reported up to now. Meanwhile, by changing the conditions of SC CO2 such as pressure, ferromagnetic responses can be manipulated, which is great for potential spintronics applications of GDY.
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Affiliation(s)
- Jian Yang
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Bo Gao
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Wei Liu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Jiang Du
- College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
| | - Qun Xu
- Henan Institute of Advanced Technology, Zhengzhou University, Zhengzhou, 450052, P. R. China.,College of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, P. R. China
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30
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Klein J, Song Z, Pingault B, Dirnberger F, Chi H, Curtis JB, Dana R, Bushati R, Quan J, Dekanovsky L, Sofer Z, Alù A, Menon VM, Moodera JS, Lončar M, Narang P, Ross FM. Sensing the Local Magnetic Environment through Optically Active Defects in a Layered Magnetic Semiconductor. ACS NANO 2023; 17:288-299. [PMID: 36537371 DOI: 10.1021/acsnano.2c07655] [Citation(s) in RCA: 10] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Atomic-level defects in van der Waals (vdW) materials are essential building blocks for quantum technologies and quantum sensing applications. The layered magnetic semiconductor CrSBr is an outstanding candidate for exploring optically active defects because of a direct gap, in addition to a rich magnetic phase diagram, including a recently hypothesized defect-induced magnetic order at low temperature. Here, we show optically active defects in CrSBr that are probes of the local magnetic environment. We observe a spectrally narrow (1 meV) defect emission in CrSBr that is correlated with both the bulk magnetic order and an additional low-temperature, defect-induced magnetic order. We elucidate the origin of this magnetic order in the context of local and nonlocal exchange coupling effects. Our work establishes vdW magnets like CrSBr as an exceptional platform to optically study defects that are correlated with the magnetic lattice. We anticipate that controlled defect creation allows for tailor-made complex magnetic textures and phases with direct optical access.
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Affiliation(s)
- Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Zhigang Song
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Benjamin Pingault
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- QuTech, Delft University of Technology, 2600 GADelft, The Netherlands
| | - Florian Dirnberger
- Department of Physics, City College of New York, New York, New York10031, United States
| | - Hang Chi
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
- U.S. Army CCDC Army Research Laboratory, Adelphi, Maryland20783, United States
| | - Jonathan B Curtis
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Rami Dana
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Rezlind Bushati
- Department of Physics, City College of New York, New York, New York10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York10016, United States
| | - Jiamin Quan
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78712, United States
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York10031, United States
- Department of Electrical Engineering, City College of the City University of New York, New York, New York10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York10026, United States
| | - Lukas Dekanovsky
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28Prague 6, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, 166 28Prague 6, Czech Republic
| | - Andrea Alù
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas78712, United States
- Photonics Initiative, CUNY Advanced Science Research Center, New York, New York10031, United States
- Department of Electrical Engineering, City College of the City University of New York, New York, New York10031, United States
- Physics Program, Graduate Center, City University of New York, New York, New York10026, United States
| | - Vinod M Menon
- Department of Physics, City College of New York, New York, New York10031, United States
- Department of Physics, The Graduate Center, City University of New York, New York, New York10016, United States
| | - Jagadeesh S Moodera
- Francis Bitter Magnet Laboratory, Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
| | - Marko Lončar
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
| | - Prineha Narang
- John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts02138, United States
- College of Letters and Science, UCLA, Los Angeles, California90095, United States
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts02139, United States
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31
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Chai Y, Lou Q, Xu M, Hong S, Feng F, Liu Y, Li Q, Feng X, Xiao H, Chen A, Wang X, Yao L. Modulation of Magnetic Exchange Coupling via Constructing Bi- or Multimagnetic Heterointerfaces. J Phys Chem Lett 2022; 13:12082-12089. [PMID: 36546645 DOI: 10.1021/acs.jpclett.2c02922] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
How to resolve contradictions between the nanoscale size and high saturation magnetization (Ms) remains one of the scientific challenges in nanoscale magnetism as the theoretical optimal Ms of nanocrystals is compromised by the surface spin disorder. Here, we proposed a novel nanotechnology solution, heterointerface constructions of exchange-coupling core-shell nanocrystals, to rearrange the surface spin for the enhancement of Ms of nanomagnetic materials. As a demonstration of this principle, single-interface coupling FePt@Fe3-δO4 core/shell nanocrystals and multi-interface coupling FePt@Fe3-δO4@MFe2O4 (M = Mn or Co) core/shell/shell nanocrystals were synthesized. The simulated and experimental results demonstrated that constructing coupling heterointerfaces orientates the overall magnetic moment, ultimately enhancing the Ms of nanomagnetic materials. Moreover, this work first demonstrated that the origin of coupling heterointerfaces arose from mismatched lattices rather than chemical composition mismatch at the core-shell interfaces, thus providing both a solution to unite different mechanisms and an explanation to explain the exchange coupling at heterointerfaces.
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Affiliation(s)
- Yahong Chai
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qi Lou
- Institute of Process Equipment, College of Energy Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Min Xu
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Song Hong
- Analytical Test Center, Beijing University of Chemical Technology, Beijing 100029, People's Republic of China
| | - Feng Feng
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Yajing Liu
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Qilong Li
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xueyan Feng
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hanzhang Xiao
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Ao Chen
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Xiuyu Wang
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Institute of Process Equipment, College of Energy Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Li Yao
- Beijing National Laboratory for Molecular Science, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
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32
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Averyanov DV, Sokolov IS, Taldenkov AN, Parfenov OE, Karateev IA, Kondratev OA, Tokmachev AM, Storchak VG. Exchange Bias State at the Crossover to 2D Ferromagnetism. ACS NANO 2022; 16:19482-19490. [PMID: 36278843 DOI: 10.1021/acsnano.2c09452] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The inherent malleability of 2D magnetism provides access to unconventional quantum phases, in particular those with coexisting magnetic orders. Incidentally, in a number of materials, the magnetic state in the bulk undergoes a fundamental change when the system is pushed to the monolayer limit. Therefore, a competition of magnetic states can be expected in the crossover region. Here, an exchange bias state is observed at the crossover from 3D antiferromagnetism to 2D ferromagnetism driven by the number of monolayers in the metalloxene GdSi2. The material constitutes a stack of alternating monolayers of Gd and silicene, the Si analogue of graphene. The exchange bias manifests itself as a shift of the hysteresis loop signifying coupling of magnetic systems, as evidenced by magnetization studies. Two features distinguish the phenomenon: (i) it is intrinsic, i.e. it is detected in an individual compound; (ii) the exchange bias field, 1.5 kOe, is unusually high, which is conducive to applications. The results suggest magnetic derivatives of 2D-Xenes to be prospective materials for ultracompact spintronics.
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Affiliation(s)
- Dmitry V Averyanov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Ivan S Sokolov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Alexander N Taldenkov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg E Parfenov
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Igor A Karateev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Oleg A Kondratev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Andrey M Tokmachev
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
| | - Vyacheslav G Storchak
- National Research Center "Kurchatov Institute", Kurchatov Sq. 1, Moscow 123182, Russia
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33
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Ferromagnetism modulation by ultralow current in a two-dimensional polycrystalline molybdenum disulphide atomic layered structure. Sci Rep 2022; 12:17199. [PMID: 36229486 PMCID: PMC9562137 DOI: 10.1038/s41598-022-22113-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/27/2022] [Accepted: 10/10/2022] [Indexed: 11/21/2022] Open
Abstract
Layered materials, such as graphene and transition metal dichalcogenides, are able to obtain new properties and functions through the modification of their crystal arrangements. In particular, ferromagnetism in polycrystalline MoS2 is of great interest because the corresponding nonmagnetic single crystals exhibit spontaneous spin splitting only through the formation of grain boundaries. However, no one has reported direct evidence of this unique phenomenon thus far. Herein, we demonstrate ferromagnetism modulation by an ultralow current density < 103 A/cm2 in 7.5-nm-thick polycrystalline MoS2, in which magnetoresistance shows three patterns according to the current intensity: wide dip, nondip and narrow dip structures. Since magnetoresistance occurs because of the interaction between the current of 4d electrons in the bulk and localized 4d spins in grain boundaries, this result provides evidence of the current modulation of ferromagnetism induced by grain boundaries. Our findings pave the way for the investigation of a novel method of magnetization switching with low power consumption for magnetic random access memories.
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34
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Boix-Constant C, Mañas-Valero S, Ruiz AM, Rybakov A, Konieczny KA, Pillet S, Baldoví JJ, Coronado E. Probing the Spin Dimensionality in Single-Layer CrSBr Van Der Waals Heterostructures by Magneto-Transport Measurements. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204940. [PMID: 36008364 DOI: 10.1002/adma.202204940] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2022] [Revised: 08/22/2022] [Indexed: 06/15/2023]
Abstract
2D magnetic materials offer unprecedented opportunities for fundamental and applied research in spintronics and magnonics. Beyond the pioneering studies on 2D CrI3 and Cr2 Ge2 Te6 , the field has expanded to 2D antiferromagnets exhibiting different spin anisotropies and textures. Of particular interest is the layered metamagnet CrSBr, a relatively air-stable semiconductor formed by antiferromagnetically-coupled ferromagnetic layers (Tc ∼150 K) that can be exfoliated down to the single-layer. It presents a complex magnetic behavior with a dynamic magnetic crossover, exhibiting a low-temperature hidden-order below T*∼40 K. Here, the magneto-transport properties of CrSBr vertical heterostructures in the 2D limit are inspected. The results demonstrate the marked low-dimensional character of the ferromagnetic monolayer, with short-range correlations above Tc and an Ising-type in-plane anisotropy, being the spins spontaneously aligned along the easy axis b below Tc . By applying moderate magnetic fields along a and c axes, a spin-reorientation occurs, leading to a magnetoresistance enhancement below T*. In multilayers, a spin-valve behavior is observed, with negative magnetoresistance strongly enhanced along the three directions below T*. These results show that CrSBr monolayer/bilayer provides an ideal platform for studying and controlling field-induced phenomena in two-dimensions, offering new insights regarding 2D magnets and their integration into vertical spintronic devices.
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Affiliation(s)
- Carla Boix-Constant
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Samuel Mañas-Valero
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Alberto M Ruiz
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Andrey Rybakov
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | | | | | - José J Baldoví
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
| | - Eugenio Coronado
- Instituto de Ciencia Molecular (ICMol), Universitat de València, Catedrático José Beltrán 2, Paterna, 46980, Spain
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35
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Cham TMJ, Karimeddiny S, Dismukes AH, Roy X, Ralph DC, Luo YK. Anisotropic Gigahertz Antiferromagnetic Resonances of the Easy-Axis van der Waals Antiferromagnet CrSBr. NANO LETTERS 2022; 22:6716-6723. [PMID: 35925774 DOI: 10.1021/acs.nanolett.2c02124] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
We report measurements of antiferromagnetic resonances in the van der Waals easy-axis antiferromagnet CrSBr. The interlayer exchange field and magnetocrystalline anisotropy fields are comparable to laboratory magnetic fields, allowing a rich variety of gigahertz-frequency dynamical modes to be accessed. By mapping the resonance frequencies as a function of the magnitude and angle of applied magnetic field, we identify the different regimes of antiferromagnetic dynamics. The spectra show good agreement with a Landau-Lifshitz model for two antiferromagnetically coupled sublattices, accounting for interlayer exchange and triaxial magnetic anisotropy. Fits allow us to quantify the parameters governing the magnetic dynamics: At 5 K, the interlayer exchange field is μ0HE = 0.395(2) T, and the hard and intermediate-axis anisotropy parameters are μ0Hc = 1.30(2) T and μ0Ha = 0.383(7) T. The existence of within-plane anisotropy makes it possible to control the degree of hybridization between the antiferromagnetic resonances using an in-plane magnetic field.
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Affiliation(s)
| | | | - Avalon H Dismukes
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Xavier Roy
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Daniel C Ralph
- Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell, Ithaca, New York 14853, United States
| | - Yunqiu Kelly Luo
- Cornell University, Ithaca, New York 14850, United States
- Kavli Institute at Cornell, Ithaca, New York 14853, United States
- Department of Physics and Astronomy, University of Southern California, Los Angeles, California 90089, United States
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36
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Ye C, Wang C, Wu Q, Liu S, Zhou J, Wang G, Söll A, Sofer Z, Yue M, Liu X, Tian M, Xiong Q, Ji W, Renshaw Wang X. Layer-Dependent Interlayer Antiferromagnetic Spin Reorientation in Air-Stable Semiconductor CrSBr. ACS NANO 2022; 16:11876-11883. [PMID: 35588189 DOI: 10.1021/acsnano.2c01151] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Magnetic van der Waals (vdW) materials possess versatile spin configurations stabilized in reduced dimensions. One magnetic order is the interlayer antiferromagnetism in A-type vdW antiferromagnet, which may be effectively modified by the magnetic field, stacking order, and thickness scaling. However, atomically revealing the interlayer spin orientation in the vdW antiferromagnet is highly challenging, because most of the material candidates exhibit an insulating ground state or instability in ambient conditions. Here, we report the layer-dependent interlayer antiferromagnetic spin reorientation in air-stable semiconductor CrSBr using magnetotransport characterization and first-principles calculations. We reveal an odd-even layer effect of interlayer spin reorientation, which originates from the competitions among interlayer exchange, magnetic anisotropy energy, and extra Zeeman energy of uncompensated magnetization. Furthermore, we quantitatively constructed the layer-dependent magnetic phase diagram with the help of a linear-chain model. Our work uncovers the layer-dependent interlayer antiferromagnetic spin reorientation engineered by magnetic field in the air-stable semiconductor.
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Affiliation(s)
- Chen Ye
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
| | - Cong Wang
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Qiong Wu
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Sheng Liu
- Okinawa Institute of Science and Technology, Onna, Okinawa Prefecture 904-0412, Japan
| | - Jiayuan Zhou
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Guopeng Wang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Aljoscha Söll
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Zdenek Sofer
- Department of Inorganic Chemistry, Faculty of Chemical Technology, University of Chemistry and Technology Prague, Technická 5, 16628 6 Prague, Czech Republic
| | - Ming Yue
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education of China, Beijing University of Technology, Beijing 100124, China
| | - Xue Liu
- Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Mingliang Tian
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei 230601, China
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing 100084, China
- Frontier Science Center for Quantum Information, Beijing 100084, China
- Beijing Academy of Quantum Information Sciences, Beijing 100193, China
- Beijing Innovation Center for Future Chips, Tsinghua University, Beijing 100084, China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing 100872, China
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
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López-Paz SA, Guguchia Z, Pomjakushin VY, Witteveen C, Cervellino A, Luetkens H, Casati N, Morpurgo AF, von Rohr FO. Dynamic magnetic crossover at the origin of the hidden-order in van der Waals antiferromagnet CrSBr. Nat Commun 2022; 13:4745. [PMID: 35961970 PMCID: PMC9374657 DOI: 10.1038/s41467-022-32290-4] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/22/2022] [Accepted: 07/20/2022] [Indexed: 11/09/2022] Open
Abstract
The van-der-Waals material CrSBr stands out as a promising two-dimensional magnet. Here, we report on its detailed magnetic and structural characteristics. We evidence that it undergoes a transition to an A-type antiferromagnetic state below TN ≈ 140 K with a pronounced two-dimensional character, preceded by ferromagnetic correlations within the monolayers. Furthermore, we unravel the low-temperature hidden-order within the long-range magnetically-ordered state. We find that it is associated to a slowing down of the magnetic fluctuations, accompanied by a continuous reorientation of the internal field. These take place upon cooling below Ts ≈ 100 K, until a spin freezing process occurs at T* ≈ 40 K. We argue this complex behavior to reflect a crossover driven by the in-plane uniaxial anisotropy, which is ultimately caused by its mixed-anion character. Our findings reinforce CrSBr as an important candidate for devices in the emergent field of two-dimensional magnetic materials.
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Affiliation(s)
- Sara A López-Paz
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland. .,Department of Chemistry, University of Zurich, CH-8057, Zurich, Switzerland.
| | - Zurab Guguchia
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | - Vladimir Y Pomjakushin
- Laboratory for Neutron Scattering and Imaging, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | - Catherine Witteveen
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland.,Department of Chemistry, University of Zurich, CH-8057, Zurich, Switzerland
| | - Antonio Cervellino
- Laboratory for Synchrotron Radiation - Condensed Matter, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | - Hubertus Luetkens
- Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | - Nicola Casati
- Laboratory for Synchrotron Radiation - Condensed Matter, Paul Scherrer Institut, CH-5232, Villigen PSI, Switzerland
| | - Alberto F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland.,Department of Applied Physics, University of Geneva, CH-1211, Geneva, Switzerland
| | - Fabian O von Rohr
- Department of Quantum Matter Physics, University of Geneva, CH-1211, Geneva, Switzerland.
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38
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Avsar A. Highly anisotropic van der Waals magnetism. NATURE MATERIALS 2022; 21:731-733. [PMID: 35768597 DOI: 10.1038/s41563-022-01299-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Affiliation(s)
- Ahmet Avsar
- School of Mathematics, Statistics and Physics, Newcastle University, Newcastle upon Tyne, UK.
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