Magnetotransport signatures of Weyl physics and discrete scale invariance in the elemental semiconductor tellurium

Weak Antilocalization and Negative Magnetoresistance of the Gate-Tunable PbTe Thin Films

We have systematically studied the electromagnetic transport properties of PbTe thin films under gate voltage modulation. The system demonstrates pronounced electron-electron interactions exclusively within the gate voltage range where only hole carriers are present. Furthermore, the Berry phase is utilized to qualitatively elucidate the transition between weak antilocalization (WAL) and weak localization (WL) through the regulation of gate voltage and temperature. Using the three-resistor model, we have effectively explained the correlation between the characteristic temperature of the R-T curve, the coexistence of electron-hole carriers, and the nonmonotonic temperature dependence of negative magnetoresistance (NMR), consistently indicating that complex magnetotransport phenomena are caused by microscopic disorder. Our research findings open up new avenues for exploring and manipulating the magnetotransport properties of PbTe thin films.

Charge noise in low Schottky barrier multilayer tellurium field-effect transistors

Creating van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and high carrier mobilities for bipolar transport, which are crucial for constructing fundamental building blocks like diodes and transistors in a 2D architecture. Following the recent discovery of elemental 2D tellurium, here, we systematically investigate the electrical transport and flicker noise of hydrothermally grown multilayer tellurium field effect transistors. While the devices exhibit a dominant p-type behavior with high hole mobilities up to ∼242 cm2 V-1 s-1 at room temperature and almost linear current-voltage characteristics down to 77 K, ambipolar behavior was observed in some cases. Through a detailed temperature dependent transport characterization, we estimated the Schottky barrier height as low as ∼20 meV. The good electrical contacts further facilitate the observation of metal-to-insulator transition at low temperature, being an intrinsic property of the tellurium channel rather than the contacts. Finally, detailed low frequency noise spectroscopy shows dominant 1/f type behavior across the entire gate-voltage range. The origin of the observed noise can be described by Hooge's mobility fluctuation model, rather than the carrier number fluctuations due to interfacial traps. We anticipate that such analysis will contribute to the development of futuristic low-noise devices using tellurium.

Doping Elemental 2D Semiconductor Te through Surface Se Substitutions

The development of two-dimensional (2D) semiconductors is limited by the lack of doping methods. We propose surface isovalent substitution as an efficient doping mechanism for 2D semiconductors by revealing the evolution of the structure and electronic properties of 2D Se/Te. Because of the different electronegativity of Se and Te, Se substitution for Te at the specific lattice sites introduces electric dipoles and leads to charge redistribution, which lowers the work function and tunes the Te films from p-type to n-type semiconductors. This differs from the gap enlargement of alloy films with random Se-Te substitutions. This doping method minimizes the change of lattice structure and surface roughness, which benefits structure stacking. Further increasing the Se content leads to the formation of two types of 2D semiconducting Se polymorphs.

Gate Modulation of Dissipationless Nonlinear Quantum Geometric Current in 2D Te

Two-dimensional trigonal tellurium (2D Te), a narrow-bandgap semiconductor with a bandgap of approximately 0.3 eV, hosts Weyl points near the band edge and exhibits a narrow, strong Berry curvature dipole (BCD). By applying a back-gate bias to align the Fermi level with the BCD, a sharp increase in the dissipationless transverse nonlinear Hall response is observed in 2D Te. Gate modulation of the BCD demonstrates an on/off ratio of 104 and a responsivity of nearly 106 V/W, while the longitudinal current induced by band modulation reaches an on/off ratio of about 10. This current is sustained up to 200 K, exhibiting a change of 3 orders of magnitude. The inclusion of both transistor action and rectification enhances the temperature sensitivity of the dissipationless Hall current, offering potential applications in electrothermal detectors and sensors and highlighting the significance of topological properties in advancing electronic applications.

Room-temperature ferroelectric, piezoelectric and resistive switching behaviors of single-element Te nanowires

Ferroelectrics are essential in memory devices for multi-bit storage and high-density integration. Ferroelectricity mainly exists in compounds but rare in single-element materials due to their lack of spontaneous polarization in the latter. However, we report a room-temperature ferroelectricity in quasi-one-dimensional Te nanowires. Piezoelectric characteristics, ferroelectric loops and domain reversals are clearly observed. We attribute the ferroelectricity to the ion displacement created by the interlayer interaction between lone-pair electrons. Ferroelectric polarization can induce a strong field effect on the transport along the Te chain, giving rise to a self-gated ferroelectric field-effect transistor. By utilizing ferroelectric Te nanowire as channel, the device exhibits high mobility (~220 cm2·V-1·s-1), continuous-variable resistive states can be observed with long-term retention (>105 s), fast speed (<20 ns) and high-density storage (>1.92 TB/cm2). Our work provides opportunities for single-element ferroelectrics and advances practical applications such as ultrahigh-density data storage and computing-in-memory devices.

Interfacial-Assembly-Induced In Situ Transformation from Aligned 1D Nanowires to Quasi-2D Nanofilms

As the dimensionality of materials generally affects their characteristics, thin films composed of low-dimensional nanomaterials, such as nanowires (NWs) or nanoplates, are of great importance in modern engineering. Among various bottom-up film fabrication strategies, interfacial assembly of nanoscale building blocks holds great promise in constructing large-scale aligned thin films, leading to emergent or enhanced collective properties compared to individual building blocks. As for 1D nanostructures, the interfacial self-assembly causes the morphology orientation, effectively achieving anisotropic electrical, thermal, and optical conduction. However, issues such as defects between each nanoscale building block, crystal orientation, and homogeneity constrain the application of ordered films. The precise control of transdimensional synthesis and the formation mechanism from 1D to 2D are rarely reported. To meet this gap, we introduce an interfacial-assembly-induced interfacial synthesis strategy and successfully synthesize quasi-2D nanofilms via the oriented attachment of 1D NWs on the liquid interface. Theoretical sampling and simulation show that NWs on the liquid interface maintain their lowest interaction energy for the ordered crystal plane (110) orientation and then rearrange and attach to the quasi-2D nanofilm. This quasi-2D nanofilm shows enhanced electric conductivity and unique optical properties compared with its corresponding 1D geometry materials. Uncovering these growth pathways of the 1D-to-2D transition provides opportunities for future material design and synthesis at the interface.

Observation of edge states derived from topological helix chains

Introducing the concept of topology has revolutionized materials classification, leading to the discovery of topological insulators and Dirac-Weyl semimetals1-3. One of the most fundamental theories underpinning topological materials is the Su-Schrieffer-Heeger (SSH) model4,5, which was developed in 1979-decades before the recognition of topological insulators-to describe conducting polymers. Distinct from the vast majority of known topological insulators with two and three dimensions1-3, the SSH model predicts a one-dimensional analogue of topological insulators, which hosts topological bound states at the endpoints of a chain4-8. To establish this unique and pivotal state, it is crucial to identify the low-energy excitations stemming from bound states, but this has remained unknown in solids because of the absence of suitable platforms. Here we report unusual electronic states that support the emergent bound states in elemental tellurium, the single helix of which was recently proposed to realize an extended version of the SSH chain9,10. Using spin- and angle-resolved photoemission spectroscopy with a micro-focused beam, we have shown spin-polarized in-gap states confined to the edges of the (0001) surface. Our density functional theory calculations indicate that these states are attributed to the interacting bound states originating from the one-dimensional array of SSH tellurium chains. Helices in solids offer a promising experimental platform for investigating exotic properties associated with the SSH chain and exploring topological phases through dimensionality control.

Giant nonlinear Hall and wireless rectification effects at room temperature in the elemental semiconductor tellurium

The second-order nonlinear Hall effect (NLHE) in non-centrosymmetric materials has recently drawn intense interest, since its inherent rectification could enable various device applications such as energy harvesting and wireless charging. However, previously reported NLHE systems normally suffer from relatively small Hall voltage outputs and/or low working temperatures. In this study, we report the observation of a pronounced NLHE in tellurium (Te) thin flakes at room temperature. Benefiting from the semiconductor nature of Te, the obtained nonlinear response can be readily enhanced through electrostatic gating, leading to a second-harmonic output at 300 K up to 2.8 mV. By utilizing such a giant NLHE, we further demonstrate the potential of Te as a wireless Hall rectifier within the radiofrequency range, which is manifested by the remarkable and tunable rectification effect also at room temperature. Extrinsic scattering is then revealed to be the dominant mechanism for the NLHE in Te, with symmetry breaking on the surface playing a key role. As a simple elemental semiconductor, Te provides an appealing platform to advance our understanding of nonlinear transport in solids and to develop NLHE-based electronic devices.

Metavalently bonded tellurides: the essence of improved thermoelectric performance in elemental Te

Elemental Te is important for semiconductor applications including thermoelectric energy conversion. Introducing dopants such as As, Sb, and Bi has been proven critical for improving its thermoelectric performance. However, the remarkably low solubility of these elements in Te raises questions about the mechanism with which these dopants can improve the thermoelectric properties. Indeed, these dopants overwhelmingly form precipitates rather than dissolve in the Te lattice. To distinguish the role of doping and precipitation on the properties, we have developed a correlative method to locally determine the structure-property relationship for an individual matrix or precipitate. We reveal that the conspicuous enhancement of electrical conductivity and power factor of bulk Te stems from the dopant-induced metavalently bonded telluride precipitates. These precipitates form electrically beneficial interfaces with the Te matrix. A quantum-mechanical-derived map uncovers more candidates for advancing Te thermoelectrics. This unconventional doping scenario adds another recipe to the design options for thermoelectrics and opens interesting pathways for microstructure design.

Magnetochiral tunneling in paramagnetic Co1/3NbS2

Electric currents have the intriguing ability to induce magnetization in nonmagnetic crystals with sufficiently low crystallographic symmetry. Some associated phenomena include the non-linear anomalous Hall effect in polar crystals and the nonreciprocal directional dichroism in chiral crystals when magnetic fields are applied. In this work, we demonstrate that the same underlying physics is also manifested in the electronic tunneling process between the surface of a nonmagnetic chiral material and a magnetized scanning probe. In the paramagnetic but chiral metallic compound Co1/3NbS2, the magnetization induced by the tunneling current is shown to become detectable by its coupling to the magnetization of the tip itself. This results in a contrast across different chiral domains, achieving atomic-scale spatial resolution of structural chirality. To support the proposed mechanism, we used first-principles theory to compute the chirality-dependent current-induced magnetization and Berry curvature in the bulk of the material. Our demonstration of this magnetochiral tunneling effect opens up an avenue for investigating atomic-scale variations in the local crystallographic symmetry and electronic structure across the structural domain boundaries of low-symmetry nonmagnetic crystals.

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Achieving room-temperature high anisotropic magnetoresistance ratios is highly desirable for magnetic sensors with scaled supply voltages and high sensitivities. However, the ratios in heterojunction-free thin films are currently limited to only a few percent at room temperature. Here, we observe a high anisotropic magnetoresistance ratio of -39% and a giant planar Hall effect (520 μΩ⋅cm) at room temperature under 9 T in β-Ag2Te crystals grown by chemical vapor deposition. We propose a theoretical model of anisotropic scattering - induced by a Dirac cone tilt and modulated by intrinsic properties of effective mass and sound velocity - as a possible origin. Moreover, small-size angle sensors with a Wheatstone bridge configuration were fabricated using the synthesized β-Ag2Te crystals. The sensors exhibited high output response (240 mV/V), high angle sensitivity (4.2 mV/V/°) and small angle error (<1°). Our work translates the developments in topological insulators to a broader impact on practical applications such as high-field magnetic and angle sensors.

Berry Curvature Dipole Induced Giant Mid-Infrared Second-Harmonic Generation in 2D Weyl Semiconductor

Due to its inversion-broken triple helix structure and the nature of Weyl semiconductor, 2D Tellurene (2D Te) is promising to possess a strong nonlinear optical response in the infrared region, which is rarely reported in 2D materials. Here, a giant nonlinear infrared response induced by large Berry curvature dipole (BCD) is demonstrated in the Weyl semiconductor 2D Te. Ultrahigh second-harmonic generation response is acquired from 2D Te with a large second-order nonlinear optical susceptibility (χ(2) ), which is up to 23.3 times higher than that of monolayer MoS2 in the range of 700-1500 nm. Notably, distinct from other 2D nonlinear semiconductors, χ(2) of 2D Te increases extraordinarily with increasing wavelength and reaches up to 5.58 nm V-1 at ≈2300 nm, which is the best infrared performance among the reported 2D nonlinear materials. Large χ(2) of 2D Te also enables the high-intensity sum-frequency generation with an ultralow continuous-wave (CW) pump power. Theoretical calculations reveal that the exceptional performance is attributed to the presence of large BCD located at the Weyl points of 2D Te. These results unravel a new linkage between Weyl semiconductor and strong optical nonlinear responses, rendering 2D Te a competitive candidate for highly efficient nonlinear 2D semiconductors in the infrared region.

Coexistence of logarithmic and SdH quantum oscillations in ferromagnetic Cr-doped tellurium single crystals

We report the synthesis of transition-metal-doped ferromagnetic elemental single-crystal semiconductors with quantum oscillations using the physical vapor transport method. The 7.7 atom% Cr-doped Te crystals (Cr:Te) show ferromagnetism, butterfly-like negative magnetoresistance in the low temperature (<3.8 K) and low field (<0.15 T) region, and high Hall mobility, e.g. 1320 cm²V^-1s^-1at 30 K and 350 cm²V^-1s^-1at 300 K, implying that Cr:Te crystals are ferromagnetic elemental semiconductors. WhenB// [001] // I, the maximum negative MR is ∼-27% atT= 20 K andB= 8 T. In the low temperature semiconducting region, Cr:Te crystals show strong discrete scale invariance dominated logarithmic quantum oscillations when the direction of the magnetic fieldBis parallel to the [100] crystallographic direction (B// [100]) and show Landau quantization dominated Shubnikov-de Haas oscillations forB// [210] direction, which suggests the broken rotation symmetry of the Fermi pockets in the Cr:Te crystals. The findings of coexistence of multiple quantum oscillations and ferromagnetism in such an elemental quantum material may inspire more study of narrow bandgap semiconductors with ferromagnetism and quantum phenomena.

Recent Progress in Cyclic Aryliodonium Chemistry: Syntheses and Applications

Hypervalent aryliodoumiums are intensively investigated as arylating agents. They are excellent surrogates to aryl halides, and moreover they exhibit better reactivity, which allows the corresponding arylation reactions to be performed under mild conditions. In the past decades, acyclic aryliodoniums are widely explored as arylation agents. However, the unmet need for acyclic aryliodoniums is the improvement of their notoriously low reaction economy because the coproduced aryl iodides during the arylation are often wasted. Cyclic aryliodoniums have their intrinsic advantage in terms of reaction economy, and they have started to receive considerable attention due to their valuable synthetic applications to initiate cascade reactions, which can enable the construction of complex structures, including polycycles with potential pharmaceutical and functional properties. Here, we are summarizing the recent advances made in the research field of cyclic aryliodoniums, including the nascent design of aryliodonium species and their synthetic applications. First, the general preparation of typical diphenyl iodoniums is described, followed by the construction of heterocyclic iodoniums and monoaryl iodoniums. Then, the initiated arylations coupled with subsequent domino reactions are summarized to construct polycycles. Meanwhile, the advances in cyclic aryliodoniums for building biaryls including axial atropisomers are discussed in a systematic manner. Finally, a very recent advance of cyclic aryliodoniums employed as halogen-bonding organocatalysts is described.

Room-temperature valley transistors for low-power neuromorphic computing

Valley pseudospin is an electronic degree of freedom that promises highly efficient information processing applications. However, valley-polarized excitons usually have short pico-second lifetimes, which limits the room-temperature applicability of valleytronic devices. Here, we demonstrate room-temperature valley transistors that operate by generating free carrier valley polarization with a long lifetime. This is achieved by electrostatic manipulation of the non-trivial band topology of the Weyl semiconductor tellurium (Te). We observe valley-polarized diffusion lengths of more than 7 μm and fabricate valley transistors with an ON/OFF ratio of 105 at room temperature. Moreover, we demonstrate an ion insertion/extraction device structure that enables 32 non-volatile memory states with high linearity and symmetry in the Te valley transistor. With ultralow power consumption (~fW valley contribution), we enable the inferring process of artificial neural networks, exhibiting potential for applications in low-power neuromorphic computing.

Enhanced electronic transport properties of Te roll-like nanostructures

In this work, the electronic transport properties of Te roll-like nanostructures were investigated in a broad temperature range by fabricating single-nanostructure back-gated field-effect-transistors via photolithography. These one-dimensional nanostructures, with a unique roll-like morphology, were produced by a facile synthesis and extensively studied by scanning and transmission electron microscopy. The nanostructures are made of pure and crystalline Tellurium with trigonal structure (t-Te), and exhibit p-type conductivity with enhanced field-effect hole mobility between 273 cm²/Vs at 320 K and 881 cm²/Vs at 5 K. The thermal ionization of shallow acceptors, with small ionization energy between 2 and 4 meV, leads to free-hole conduction at high temperatures. The free-hole mobility follows a negative power-law temperature behavior, with an exponent between -1.28 and -1.42, indicating strong phonon scattering in this temperature range. At lower temperatures, the electronic conduction is dominated by nearest-neighbor hopping (NNH) conduction in the acceptor band, with a small activation energy E _NNH ≈ 0.6 meV and an acceptor concentration of N _A ≈ 1 × 10¹⁶ cm^-3. These results demonstrate the enhanced electrical properties of these nanostructures, with a small disorder, and superior quality for nanodevice applications.

Layer-controlled evolution of electron state in the silicene intercalation compound SrSi2

Silicene, a Si-based analogue of graphene, holds a high promise for electronics because of its exceptional properties but a high chemical reactivity makes it a very challenging material to work with. The silicene lattice can be stabilized by active metals to form stoichiometric compounds MSi₂. Being candidate topological semimetals, these materials provide an opportunity to probe layer dependence of unconventional electronic structures. It is demonstrated here that in the silicene compound SrSi₂, the number of monolayers controls the electronic state. A series of films ranging from bulk-like multilayers down to a single monolayer have been synthesized on silicon and characterized with a combination of techniques - from electron and X-ray diffraction to high-resolution electron microscopy. Transport measurements reveal evolution of the chiral anomaly in bulk SrSi₂ to weak localization in ultrathin films down to 3 monolayers followed by 3D and 2D strong localization in 2 and 1 monolayers, respectively. The results outline the range of stability of the chiral state, important for practical applications, and shed light on the localization phenomena in the limit of a few monolayers.

Discrete scale invariance of the quasi-bound states at atomic vacancies in a topological material

Recently, log-periodic quantum oscillations have been detected in the topological materials zirconium pentatelluride (ZrTe5) and hafnium pentatelluride (HfTe5), displaying an intriguing discrete scale invariance (DSI) characteristic. In condensed materials, the DSI is considered to be related to the quasi-bound states formed by massless Dirac fermions with strong Coulomb attraction, offering a feasible platform to study the long-pursued atomic-collapse phenomenon. Here, we demonstrate that a variety of atomic vacancies in the topological material HfTe5 can host the geometric quasi-bound states with a DSI feature, resembling an artificial supercritical atom collapse. The density of states of these quasi-bound states is enhanced, and the quasi-bound states are spatially distributed in the "orbitals" surrounding the vacancy sites, which are detected and visualized by low-temperature scanning tunneling microscope/spectroscopy. By applying the perpendicular magnetic fields, the quasi-bound states at lower energies become wider and eventually invisible; meanwhile, the energies of quasi-bound states move gradually toward the Fermi energy (EF). These features are consistent with the theoretical prediction of a magnetic field-induced transition from supercritical to subcritical states. The direct observation of geometric quasi-bound states sheds light on the deep understanding of the DSI in quantum materials.

Unveiling Weyl-related optical responses in semiconducting tellurium by mid-infrared circular photogalvanic effect

Elemental tellurium, conventionally recognized as a narrow bandgap semiconductor, has recently aroused research interests for exploiting Weyl physics. Chirality is a unique feature of Weyl cones and can support helicity-dependent photocurrent generation, known as circular photogalvanic effect. Here, we report circular photogalvanic effect with opposite signs at two different mid-infrared wavelengths which provides evidence of Weyl-related optical responses. These two different wavelengths correspond to two critical transitions relating to the bands of different Weyl cones and the sign of circular photogalvanic effect is determined by the chirality selection rules within certain Weyl cone and between two different Weyl cones. Further experimental evidences confirm the observed response is an intrinsic second-order process. With flexibly tunable bandgap and Fermi level, tellurium is established as an ideal semiconducting material to manipulate and explore chirality-related Weyl physics in both conduction and valence bands. These results are also directly applicable to helicity-sensitive optoelectronics devices.

Topological phase change transistors based on tellurium Weyl semiconductor

Modern electronics demand transistors with extremely high performance and energy efficiency. Charge-based transistors with conventional semiconductors experience substantial heat dissipation because of carrier scattering. Here, we demonstrate low-loss topological phase change transistors (TPCTs) based on tellurium, a Weyl semiconductor. By modulating the energy separation between the Fermi level and the Weyl point of tellurium through electrostatic gate modulation, the device exhibits topological phase change between Weyl (Chern number ≠ 0) and conventional (Chern number = 0) semiconductors. In the Weyl ON state, the device has low-loss transport characteristics due to the global topology of gauge fields against external perturbations; the OFF state exhibits trivial charge transport in the conventional phase by moving the Fermi level into the bandgap. The TPCTs show a high ON/OFF ratio (10⁸) at low operation voltage (≤2 volts) and high ON-state conductance (39 mS/μm). Our studies provide alternative strategies for realizing ultralow power electronics.

Gate-tuneable and chirality-dependent charge-to-spin conversion in tellurium nanowires

Chiral materials are an ideal playground for exploring the relation between symmetry, relativistic effects and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as tellurium have excellent electrical conductivity, but their potential for enabling the electrical control of spin polarization in devices remains unclear. Here, we demonstrate the all-electrical generation, manipulation and detection of spin polarization in chiral single-crystalline tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.

Enhanced in-plane ferroelectricity, antiferroelectricity, and unconventional 2D emergent fermions in quadruple-layer XSbO2 (X = Li, Na)

Low-dimensional ferroelectricity and Dirac materials with protected band crossings are fascinating research subjects. Based on first-principles calculations, we predict the coexistence of spontaneous in-plane polarization and novel 2D emergent fermions in dynamically stable quadruple-layer (QL) XSbO₂ (X = Li, Na). Depending on the different polarization configurations, QL-XSbO₂ can exhibit unconventional inner-QL ferroelectricity and antiferroelectricity. Both ground states harbor robust ferroelectricity with enhanced spontaneous polarization of 0.56 nC m^-1 and 0.39 nC m^-1 for QL-LiSbO₂ and QL-NaSbO₂, respectively. Interestingly, the QL-LiSbO₂ possesses two other metastable ferroelectric (FE) phases. The ground FE phase can be flexibly driven into one of the two metastable FE phases and then into the antiferroelectric (AFE) phase. During this phase transition, several types of 2D fermions emerge, for instance, hourglass hybrid and type-II Weyl loops in the ground FE phase, type-II Weyl fermionsin the metastable FE phase, and type-II Dirac fermions in the AFE phase. These 2D fermions are robust under spin-orbit coupling. Notably, two of these fermions, e.g., an hourglass hybrid or type-II Weyl loop, have not been observed before. Our findings identify QL-XSbO₂ as a unique platform for studying 2D ferroelectricity relating to 2D emergent fermions.

Safety evaluation of mice exposed to 7.0-33.0 T high-static magnetic fields

Magnetic resonance imaging (MRI) of 7 T and higher can provide superior image resolution and capability. Clinical tests have been performed in 9.4 T MRI, and 21.1 T small-bore-size MRI has also been tested in rodents. Although the safety issue is a prerequisite for their future medical application, there are very few relevant studies for the safety of static magnetic fields (SMFs) of ≧20 T. The aim of this study was to assess the biological effects of 7.0-33.0 T SMFs in healthy adult mice. This was a prospective study, in which 104 healthy adult C57BL/6 mice were divided into control, sham control, and 7.0-33.0 T SMF-exposed groups.The sham control group and SMF group were handled identically, except for the electric current for producing SMF. A separate control group was placed outside the magnet and their data were used as normal range. After 1 h exposure, all mice were routinely fed for another 2 months while their body weight and food/water consumption were monitored. After 2 months, their complete blood count, blood biochemistry, key organ weight, and histomorphology were examined. All data are normally distributed. Differences between the sham and SMF-exposed groups were evaluated by unpaired t test. Most indicators did not show statistically significant changes or were still within the normal ranges, with only a few exceptions. For example, mono % in Group 2 (11.1 T) is 6.03 ± 1.43% while the normal range is 6.60-9.90% (p < 0.05). The cholesterol level in 33 T group is 3.38 ± 0.36 mmol/L while the normal range is 2.48-3.29 mmol/L (p < 0.05). The high-density lipoprotein cholesterol level in 33 T group is 2.54 ± 0.29 mmol/L while the normal reference range is 1.89-2.43 mmol/L (p < 0.01). Exposure to 7.0-33.0 T for 1 h did not have detrimental effects on normal adult mice. LEVEL OF EVIDENCE: 1 TECHNICAL EFFICACY STAGE: 1.