Band bending in conjugated polymer layers

Dipole Modulation Engineering Enhances Structural Order of PEDOT:PSS for Efficient and Stable InP-Based QLEDs

Indium phosphide (InP)-based quantum dot light-emitting diodes (QLEDs) are promising for future lighting and display applications due to their high color purity and brightness. However, their efficiency and stability are often limited by the disordered structure of the widely used poly(3,4-ethylenedioxythiophene):polystyrenesulfonate (PEDOT:PSS), which impairs charge transport. Herein, we present a strategy to enhance the performance of InP-based QLEDs by modifying PEDOT:PSS through interfacial dipole modulation using molybdenum oxide (MoOx) nanoparticles. The strong hydrogen bonding between MoOx and PSS creates strong dipole-dipole interactions, reducing the separation of PEDOT-rich regions, enhancing π-π stacking and conductivity. This optimization facilitates balanced electron and hole injection, increasing external quantum efficiency (EQE) from 12.2% in control devices to 17.8% in the treated devices, along with a brightness enhancement from 32,998 to 43,567 cd m-2. Notably, our treated devices exhibit a reduction in efficiency attenuation compared to other reported InP-based QLEDs, particularly at high brightness levels of 5000 and 10,000 cd m-2, with EQE attenuation of only 4 and 9%, respectively, compared to 16 and 30% for controls. This work highlights the potential of dipole engineering in advancing InP-based QLED technology, providing a pathway for developing high-performance, stable, and eco-friendly lighting and displays.

Charge Carrier Density in Organic Semiconductors Modulates the Effective Capacitance: A Unified View of Electrolyte Gated Organic Transistors

A framework for electrolyte-gated organic transistors (EGOTs) that unifies the view of interfacial capacitive coupling of electrolyte-gated organic field-effect transistors (EGOFETs) with the volumetric capacitive coupling in organic electrochemical transistors (OECTs) is proposed. The EGOT effective capacitance arises from in-series capacitances of the electrolyte/gate electrode and electrolyte/channel interfaces, and the chemical capacitance of the organic semiconductor channel whose weight with respect to the interfacial capacitance is modulated by the charge carrier density, hence by the gate voltage. The expression for chemical capacitance is derived from the DOS of the organic semiconductor, which it is assumed to exhibit exponential energy disorder in the HOMO-LUMO gap. The analytical expression of the EGOT current is assessed on experimental data and shown to accurately predict the shape of the whole transfer curve of an EGOT thus allowing to extract accurate values for the switch-on voltage and the interfacial transconductance, without assumptions on specific response regime and, in OECT, without invoking the volumetric capacitance. Interestingly, the EGOT model recovers EGOFET and OECT as limit cases and, in the latter case, explicitly represents the volumetric capacitance in terms of the energy disorder and the bandgap of the organic semiconductor.

Electrostatically Designing Materials and Interfaces

Collective electrostatic effects arise from the superposition of electrostatic potentials of periodically arranged (di)polar entities and are known to crucially impact the electronic structures of hybrid interfaces. Here, it is discussed, how they can be used outside the beaten paths of materials design for realizing systems with advanced and sometimes unprecedented properties. The versatility of the approach is demonstrated by applying electrostatic design not only to metal-organic interfaces and adsorbed (complex) monolayers, but also to inter-layer interfaces in van der Waals heterostructures, to polar metal-organic frameworks (MOFs), and to the cylindrical pores of covalent organic frameworks (COFs). The presented design ideas are straightforward to simulate and especially for metal-organic interfaces also their experimental implementation has been amply demonstrated. For van der Waals heterostructures, the needed building blocks are available, while the required assembly approaches are just being developed. Conversely, for MOFs the necessary growth techniques exist, but more work on advanced linker molecules is required. Finally, COF structures exist that contain pores decorated with polar groups, but the electrostatic impact of these groups has been largely ignored so far. All this suggest that the dawn of the age of electrostatic design is currently experienced with potential breakthroughs lying ahead.

Doping bilayer hole-transport polymer strategy stabilizing solution-processed green quantum-dot light-emitting diodes

Quantum-dot light-emitting diodes (QLEDs) are solution-processed electroluminescence devices with great potential as energy-saving, large-area, and low-cost display and lighting technologies. Ideally, the organic hole-transport layers (HTLs) in QLEDs should simultaneously deliver efficient hole injection and transport, effective electron blocking, and robust electrochemical stability. However, it is still challenging for a single HTL to fulfill all these stringent criteria. Here, we demonstrate a general design of doping-bilayer polymer-HTL architecture for stabilizing high-efficiency QLEDs. We show that the bilayer HTLs combining the electrochemical-stable polymer and the electron-blocking polymer unexpectedly increase the hole injection barrier. We mitigated the problem by p-doping of the underlying sublayer of the bilayer HTLs. Consequently, green QLEDs with an unprecedented maximum luminance of 1,340,000 cd m-2 and a record-long operational lifetime (T95 lifetime at an initial luminance of 1000 cd m-2 is 17,700 hours) were achieved. The universality of the strategy is examined in various polymer-HTL systems, providing a general route toward high-performance solution-processed QLEDs.

Interface Engineering for Highly Efficient Organic Solar Cells

Organic solar cells (OSCs) have made dramatic advancements during the past decades owing to the innovative material design and device structure optimization, with power conversion efficiencies surpassing 19% and 20% for single-junction and tandem devices, respectively. Interface engineering, by modifying interface properties between different layers for OSCs, has become a vital part to promote the device efficiency. It is essential to elucidate the intrinsic working mechanism of interface layers, as well as the related physical and chemical processes that manipulate device performance and long-term stability. In this article, the advances in interface engineering aimed to pursue high-performance OSCs are reviewed. The specific functions and corresponding design principles of interface layers are summarized first. Then, the anode interface layer, cathode interface layer in single-junction OSCs, and interconnecting layer of tandem devices are discussed in separate categories, and the interface engineering-related improvements on device efficiency and stability are analyzed. Finally, the challenges and prospects associated with application of interface engineering are discussed with the emphasis on large-area, high-performance, and low-cost device manufacturing.

Field-effect bulk mobilities in polymer semiconductor films measured by sourcemeters

Semiconducting polymers inherently exhibit polydispersity in terms of molecular structure and microscopic morphology, which often results in a broad distribution of energy levels for localized electronic states. Therefore, the bulk charge mobility strongly depends on the free charge density. In this study, we propose a method to measure the charge-density-dependent bulk mobility of conjugated polymer films with widely spread localized states using a conventional field-effect transistor configuration. The gate-induced variation of bulk charge density typically ranges within ±1018 cm-3; however, this range depends significantly on the energetic dispersion width of localized states. The field-effect bulk mobility and field-effect mobility near the semiconductor-dielectric interface along with their dependence on charge density can be simultaneously extracted from the transistor characteristics using various gate voltage ranges.

Visualization of Charge-Density-Wave Reconstruction and Electronic Superstructure at the Edge of Correlated Insulator 1T-NbSe2

Edges of low-dimensional quantum systems have profound effects on both fundamental research and device functionality. Real-space investigation of the microscopic edge structures and understanding the edge-modulated electronic properties are of great essence. Here we report the nanoscale structural reconstruction at the atomically sharp edge of a charge-density-wave (CDW) correlated insulator 1T-NbSe₂ and the induced electronic properties. We find the CDW unit cells at the edge of single layer (SL) 1T-NbSe₂ evolve from the well-defined CDW order in bulk and spontaneously reconstruct into the quartet along the edge. Moreover, we capture an anomalous electronic superstructure along the edge, the periodicity of which is four times that of ordinary CDW lattice. Our findings provide a way to design the one-dimensional electronic superstructure in 2D quantum materials.

Spectroscopic Perception of Trap States on the Performance of Methylammonium and Formamidinium Lead Iodide Perovskite Solar Cells

To enhance the efficiency and stability of the organic-inorganic hybrid perovskite (OIHP) solar cells, doping has been demonstrated as a straightforward method. Nevertheless, the perception of trap states regulated by doping and their effects on the performance of solar cells is not in-depth. Herein, typical OIHPs (CH₃ NH₃ PbI₃ and Cs_0.05 FA_0.85 MA_0.10 Pb(I_0.97 Br_0.03 )₃ ) doped with RbI are employed to expound the doping mechanism in affecting the efficiency of devices. Systematic spectroscopic characterizations indicate that doping significantly influences the photocarrier dynamics via directly regulating the trap states. The results indicate that doping would reduce the trap density by passivating defects and induce extra trapping centers. This directly manipulates the transient transport of the photocarriers and finally influences the output of devices. The optimization of solar cell performance requires the tradeoff of competitive relation between the passivation and introduction of trapping centers. The results provide the spectroscopic perception on how doping concentration affects trap density, carrier dynamics, transport behavior, and ultimately the parameters of devices. It provides a straightforward guidance to the design and optimization of OIHP-based solar cells.

Mechanism and Timescales of Reversible p-Doping of Methylammonium Lead Triiodide by Oxygen

Understanding and controlling the energy level alignment at interfaces with metal halide perovskites (MHPs) is essential for realizing the full potential of these materials for use in optoelectronic devices. To date, however, the basic electronic properties of MHPs are still under debate. Particularly, reported Fermi level positions in the energy gap vary from indicating strong n- to strong p-type character for nominally identical materials, raising serious questions about intrinsic and extrinsic defects as dopants. ​In this work, photoemission experiments demonstrate that thin films of the prototypical methylammonium lead triiodide (MAPbI3 ) behave like an intrinsic semiconductor in the absence of oxygen. Oxygen is then shown to be able to reversibly diffuse into and out of the MAPbI3 bulk, requiring rather long saturation timescales of ≈1 h (in: ambient air) and over 10 h (out: ultrahigh vacuum), for few 100 nm thick films. Oxygen in the bulk leads to pronounced p-doping, positioning the Fermi level universally ≈0.55 eV above the valence band maximum. The key doping mechanism is suggested to be molecular oxygen substitution of iodine vacancies, supported by density functional theory calculations. This insight rationalizes previous and future electronic property studies of MHPs and calls for meticulous oxygen exposure protocols.

Infrared spectroscopy depth profiling of organic thin films

Organic thin films are widely used in organic electronics and coatings. Such films often feature film-depth dependent variations of composition and optoelectronic properties. State-of-the-art depth profiling methods such as mass spectroscopy and photoelectron spectroscopy rely on non-intrinsic species (vaporized ions, etching-induced surface defects), which are chemically and functionally different from the original materials. Here we introduce an easily-accessible and generally applicable depth profiling method: film-depth-dependent infrared (FDD-IR) spectroscopy profilometry based on directly measuring the intrinsic material after incremental surface-selective etching by a soft plasma, to study the material variations along the surface-normal direction. This depth profiling uses characteristic vibrational signatures of the involved compounds, and can be used for both conjugated and non-conjugated, neutral and ionic materials. A film-depth resolution of one nanometer is achieved. We demonstrate the application of this method for investigation of device-relevant thin films, including organic field-effect transistors and organic photovoltaic cells, as well as ionized dopant distributions in doped semiconductors.

Improving organic photovoltaic cells by forcing electrode work function well beyond onset of Ohmic transition

As electrode work function rises or falls sufficiently, the organic semiconductor/electrode contact reaches Fermi-level pinning, and then, few tenths of an electron-volt later, Ohmic transition. For organic solar cells, the resultant flattening of open-circuit voltage (V_oc) and fill factor (FF) leads to a ‘plateau’ that maximizes power conversion efficiency (PCE). Here, we demonstrate this plateau in fact tilts slightly upwards. Thus, further driving of the electrode work function can continue to improve V_oc and FF, albeit slowly. The first effect arises from the coercion of Fermi level up the semiconductor density-of-states in the case of ‘soft’ Fermi pinning, raising cell built-in potential. The second effect arises from the contact-induced enhancement of majority-carrier mobility. We exemplify these using PBDTTPD:PCBM solar cells, where PBDTTPD is a prototypal face-stacked semiconductor, and where work function of the hole collection layer is systematically ‘tuned’ from onset of Fermi-level pinning, through Ohmic transition, and well into the Ohmic regime.

Both open-circuit voltage and fill factor of organic solar cells are affected by the metal-organic semiconductor interface. Here, the authors demonstrate that the voltage can continue to rise when the Fermi level is forced up to the semiconductor density-of-states tail.

Nanoscale mobility mapping in semiconducting polymer films

Local electrical properties of thin films of the polymer PTB7 are studied by conductive atomic force microscopy (C-AFM). Non-uniform nanoscale current distribution in the neat PTB7 film is revealed and connected with the existence of ordered PTB7 crystallites. The shape of local I-V curves is explained by the presence of space charge limited current. We modify an existing semi-empirical model for estimation of the nanoscale hole mobility from our experimental C-AFM measurements. The procedure of nanoscale charge mobility estimation was described and applied to the PTB7 films. The calculated average C-AFM hole mobility is in good agreement with macroscopic values reported for this material. Mapping of nanoscale hole mobility was achieved using the described procedure. Local mobility values, influenced by nanoscale structure, vary more than two times in value and have a root-mean-square value 0.22 × 10^-8 m²/(Vs), which is almost 20% from average hole mobility.

Single-Step Formation of a Low Work Function Cathode Interlayer and n-type Bulk Doping from Semiconducting Polymer/Polyethylenimine Blend Solution

The use of polyethylenimine (PEI) as a thin interlayer between cathodes and organic semiconductors in order to reduce interfacial Ohmic losses has become an important approach in organic electronics. It has also been shown that such interlayers can form spontaneously because of vertical phase separation when spin-coating a blended solution of PEI and the semiconductor. Furthermore, bulk doping of semiconducting polymers by PEI has been claimed. However, to our knowledge, a clear delineation of interfacial from bulk effects has not been published. Here, we report a study on thin films formed by spin-coating blended solutions of PEI and poly{[N,N'-bis(2-octyldodecyl)naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} [P(NDI2OD-T₂)] on indium tin oxide. We observed the vertical phase separation in such films, where PEI accumulates at the bottom and the top, sandwiching the semiconductor layer. The PEI interlayer on ITO reduces the electron injection barrier to the minimum value determined by Fermi level pinning, which, in turn, reduces the contact resistance by 5 orders of magnitude. Although we find no evidence for doping-induced polarons in P(NDI2OD-T₂) upon mixing with PEI from optical absorption, more sensitive electron paramagnetic resonance measurements provide evidence for doping and an increased carrier density, at a very low level. This, in conjunction with an increased charge carrier mobility due to trap filling, results in an increase in the mixed polymer conductivity by 4 orders of magnitude relative to pure P(NDI2OD-T₂). Consequently, both interfacial and bulk effects occur with notable magnitude in thin films formed from blended semiconductor polymer/PEI solution. Thus, this facile one-step procedure to form PEI interlayers must be applied with attention, as modification of the bulk semiconductor polymer (here doping) may occur simultaneously and might go un-noticed if not examined carefully.

Measuring Energetic Disorder in Organic Semiconductors Using the Photogenerated Charge-Separation Efficiency

Quantifying energetic disorder in organic semiconductors continues to attract attention because of its significant impact on the transport physics of these technologically important materials. Here, we show that the energetic disorder of organic semiconductors can be determined from the relationship between the internal quantum efficiency of charge generation and the frequency of the incident light. Our results for a number of materials suggest that energetic disorder in organic semiconductors could be greater than previously reported, and we advance ideas as to why this may be the case.

Mixtures of Dopant-Free Spiro-OMeTAD and Water-Free PEDOT as a Passivating Hole Contact in Perovskite Solar Cells

Doped spiro-OMeTAD at present is the most commonly used hole transport material (HTM) in n-i-p-type perovskite solar cells, enabling high efficiencies around 22%. However, the required dopants were shown to induce nonradiative recombination of charge carriers and foster degradation of the solar cell. Here, in a novel approach, highly conductive and inexpensive water-free poly(3,4-ethylenedioxythiophene) (PEDOT) is used to replace these dopants. The resulting spiro-OMeTAD/PEDOT (SpiDOT) mixed films achieve higher lateral conductivities than layers of doped spiro-OMeTAD. Furthermore, combined transient and steady-state photoluminescence studies reveal a passivating effect of PEDOT, suppressing nonradiative recombination losses at the perovskite/HTM interface. This enables excellent quasi-Fermi level splitting values of up to 1.24 eV in perovskite/SpiDOT layer stacks and high open-circuit voltages ( V_OC) up to 1.19 V in complete solar cells. Increasing the amount of dopant-free spiro-OMeTAD in SpiDOT layers is shown to enhance hole extraction and thereby improves the fill factor in solar cells. As a consequence, stabilized efficiencies up to 18.7% are realized, exceeding cells with doped spiro-OMeTAD as a HTM in this study. Moreover, to the best of our knowledge, these results mark the lowest nonradiative recombination loss in the V_OC (140 mV with respect to the Shockley-Queisser limit) and highest efficiency reported so far for perovskite solar cells using PEDOT as a HTM.

Field-Effect Charge Transport in Doped Polymer Semiconductor-Insulator Alternating Bulk Junctions with Ultrathin Transport Layers

Conjugated-polymer field-effect transistors are attractive for flexible electronics. However, relatively high chemical doping (oxidation) concentration of p-type polymer semiconductors is usually not compatible with good transistor performance, due to poor switching-off capability and short-channel performance. Here, we propose a combined simulation and experimental investigation on charge transport in a semiconductor-insulator alternating bulk junction composed of repeating semiconductor and insulator regions, which shows better transistor performance at higher doping levels, as compared with traditional planar transistors. Moreover, the doped semiconductor transport layers in the junction should be less than 2 nm thick to ensure sufficient pinch-off capability. Using some semiconductors including poly(3-hexylthiophene), we utilize a fast solvent evaporation approach to obtain semiconductor-insulator alternating bulk junctions with ultrathin (thickness < 2 nm) semiconductor crystallites and with vertical gradients of both morphology and electronic properties. Doping with a concentration of up to 10¹⁹ cm^-3 simultaneously induces the improvement of field-effect mobility, on/off ratio, and subthreshold swing, which leads to long-term (>1 year) stability, without lowering the short-channel performance. Moreover, these heterojunctions are optically transparent, nearly colorless, and flexible, thus could be exploited for wide electronic and photonic applications.

Ohmic transition at contacts key to maximizing fill factor and performance of organic solar cells

While thermodynamic detailed balance limits the maximum power conversion efficiency of a solar cell, the quality of its contacts can further limit the actual efficiency. The criteria for good contacts to organic semiconductors, however, are not well understood. Here, by tuning the work function of poly(3,4-ethylenedioxythiophene) hole collection layers in fine steps across the Fermi-level pinning threshold of the model photoactive layer, poly(3-hexylthiophene):phenyl-C₆₁-butyrate methyl ester, in organic solar cells, we obtain direct evidence for a non-ohmic to ohmic transition at the hole contact that lies 0.3 eV beyond its Fermi-level pinning transition. This second transition corresponds to reduction of the photocurrent extraction resistance below the bulk resistance of the cell. Current detailed balance analysis reveals that this extraction resistance is the counterpart of injection resistance, and the measured characteristics are manifestations of charge carrier hopping across the interface. Achieving ohmic transition at both contacts is key to maximizing fill factor without compromising open-circuit voltage nor short-circuit current of the solar cell.

The importance of ohmic contacts for organic solar cells has been recognized, but how the transition to ohmic behavior occurs is unknown. Tan et al. show that this transition happens separately beyond Fermi-level pinning, when the interfacial contact resistivity becomes sufficiently low.

Self-Assembled Monolayers at the Conjugated Polymer/Electrode Interface: Implications for Charge Transport and Band-Bending Behavior

The role of self-assembled monolayers (SAMs), trichloro(1 H,1 H,2 H,2 H-perfluorooctyl) (FTS) and octadecyltrichlorosilane (OTS), deposited on indium tin oxide (ITO) substrates, on electronic properties of the poly(3-hexylthiophene) (P3HT)/SAM/ITO system is reported. SAMs, well known for modifying the surface energies of materials, are also known to modify the work functions (WFs) of semiconductors. Unsurprisingly, differences between the band-bending behaviors of P3HT/ITO, P3HT/OTS/ITO, and P3HT/FTS/ITO systems were observed because the SAMs modify the WF of ITO. However, the degrees of band bending occurring in these systems could not be attributed solely to the modified WFs of the substrate. This was apparent based on measurements of samples that included P3HT films prepared with different morphological structures. Changes in the morphological structure, due to different deposition methods and surface energies of the substrates, are necessarily connected to changes in the electronic structure, including changes in the electronic density of states (DOS), of P3HT. An association between (i) the WF differences between P3HT, ITO, and SAM/ITO substrates, (ii) the surface energies of the ITO and SAM/ITO substrates, which influence the morphology of the deposited P3HT layer, (iii) the DOS widths of P3HT, and (iv) the degree of band bending is suggested.

Effect of Band Bending and Energy Level Alignment at the Donor/Acceptor Interface on Open-Circuit Voltage in Organic Solar Cells

Open-circuit voltage ( V_OC) is a key parameter governing the power conversion efficiency of organic solar cells. We clarified the effect of band bending in organic semiconductor films on the V_OC of phthalocyanine (H₂Pc)/fullerene (C₆₀) planar heterojunction (PHJ) OSCs. The V_OC was significantly affected by the H₂Pc layer thickness, varying from 0.20 V at 2 nm to 0.49 V at 100 nm thickness. The large V_OC change is due to the band bending in the H₂Pc layer, where the difference in H₂Pc layer thickness led to significant changes in the degree of the vacuum-level shift in the C₆₀ layer because of the Fermi level ( E_F) difference between the H₂Pc and C₆₀ layers. This result demonstrated that a new influential factor affecting the V_OC is the position of the E_F that is dependent on band bending in organic semiconductor films.

Direct Observation of the Dipole-Induced Energetic Disorder in Rubrene Single-Crystal Transistors by Scanning Kelvin Probe Microscopy

It is commonly accepted that gate dielectric dipoles can induce energetic disorder in organic field-effect transistors. However, convincing experimental evidence that directly demonstrate this effect are still in lack. In this work, we present a combined experimental and theoretical study to reveal this effect. We have investigated the temperature-dependent mobility of two rubrene single-crystal transistors with different polymer dielectrics. Model fittings of the data indicate there is higher energetic disorder in the device on dielectric with larger permittivity. Scanning Kelvin probe microscopy was then employed to directly characterize the density of tail states, which is correlated with energetic disorder, in the devices. The results further confirm that dielectric dipoles can increase energetic disorder in organic semiconductors.

Molecular doping enabled scalable blading of efficient hole-transport-layer-free perovskite solar cells

The efficiencies of perovskite solar cells (PSCs) are now reaching such consistently high levels that scalable manufacturing at low cost is becoming critical. However, this remains challenging due to the expensive hole-transporting materials usually employed, and difficulties associated with the scalable deposition of other functional layers. By simplifying the device architecture, hole-transport-layer-free PSCs with improved photovoltaic performance are fabricated via a scalable doctor-blading process. Molecular doping of halide perovskite films improved the conductivity of the films and their electronic contact with the conductive substrate, resulting in a reduced series resistance. It facilitates the extraction of photoexcited holes from perovskite directly to the conductive substrate. The bladed hole-transport-layer-free PSCs showed a stabilized power conversion efficiency above 20.0%. This work represents a significant step towards the scalable, cost-effective manufacturing of PSCs with both high performance and simple fabrication processes.

The existing hole-transporting materials cause problems in the cost and scalability of the perovskite solar cells. Here Wu et al. fabricate high efficiency cells by molecularly doping the perovskite layer without using hole-transporting layers, thus simplify the device architecture and processing steps.

Ambipolar charge transport in a bis-diketopyrrolopyrrole small molecule semiconductor with tunable energetic disorder

Energetic disorder and activation energy in ambipolar OFETs based on a small molecule BTDPP2 are tuned by its crystallinity.

Large bipolaron density at organic semiconductor/electrode interfaces

Bipolaron states, in which two electrons or two holes occupy a single molecule or conjugated polymer segment, are typically considered to be negligible in organic semiconductor devices due to Coulomb repulsion between the two charges. Here we use charge modulation spectroscopy to reveal a bipolaron sheet density >10¹⁰ cm^-2 at the interface between an indium tin oxide anode and the common small molecule organic semiconductor N,N'-Bis(3-methylphenyl)-N,N'-diphenylbenzidine. We find that the magnetocurrent response of hole-only devices correlates closely with changes in the bipolaron concentration, supporting the bipolaron model of unipolar organic magnetoresistance and suggesting that it may be more of an interface than a bulk phenomenon. These results are understood on the basis of a quantitative interface energy level alignment model, which indicates that bipolarons are generally expected to be significant near contacts in the Fermi level pinning regime and thus may be more prevalent in organic electronic devices than previously thought.

Interfacial Molecular Packing Determines Exciton Dynamics in Molecular Heterostructures: The Case of Pentacene-Perfluoropentacene

The great majority of electronic and optoelectronic devices depend on interfaces between p-type and n-type semiconductors. Finding matching donor-acceptor systems in molecular semiconductors remains a challenging endeavor because structurally compatible molecules may not necessarily be suitable with respect to their optical and electronic properties, and the large exciton binding energy in these materials may favor bound electron-hole pairs rather than free carriers or charge transfer at an interface. Regardless, interfacial charge-transfer exciton states are commonly considered as an intermediate step to achieve exciton dissociation. The formation efficiency and decay dynamics of such states will strongly depend on the molecular makeup of the interface, especially the relative alignment of donor and acceptor molecules. Structurally well-defined pentacene-perfluoropentacene heterostructures of different molecular orientations are virtually ideal model systems to study the interrelation between molecular packing motifs at the interface and their electronic properties. Comparing the emission dynamics of the heterosystems and the corresponding unitary films enables accurate assignment of every observable emission signal in the heterosystems. These heterosystems feature two characteristic interface-specific luminescence channels at around 1.4 and 1.5 eV that are not observed in the unitary samples. Their emission strength strongly depends on the molecular alignment of the respective donor and acceptor molecules, emphasizing the importance of structural control for device construction.

Efficacy improvement in polymer LEDs via silver-nanoparticle doping in the emissive layer

The coupling of surface plasmons and excitons in the emissive layer (EML) can improve the performance of polymer light-emitting diodes (PLEDs). Silver nanoparticles (Ag-NPs) with a decahedron structure are prepared by the chemical reduction and photochemical methods and doped directly into the EML after the phase-transfer process. The surface plasmon resonance effect of Ag-NPs, which makes full use of quenched excitons and increases the efficiency of excitons in the EML in a PLED, enhances the current efficacy by a factor of 75 relative to that of the undoped reference device (from 0.22 to 16.64 cd/A). These results demonstrate that Ag-NPs can assist in simple and low-cost fabrication of high-performance polymer optoelectronic devices.

Energy Level Alignment at Metal/Solution-Processed Organic Semiconductor Interfaces

Energy barriers between the metal Fermi energy and the molecular levels of organic semiconductor devoted to charge transport play a fundamental role in the performance of organic electronic devices. Typically, techniques such as electron photoemission spectroscopy, Kelvin probe measurements, and in-device hot-electron spectroscopy have been applied to study these interfacial energy barriers. However, so far there has not been any direct method available for the determination of energy barriers at metal interfaces with n-type polymeric semiconductors. This study measures and compares metal/solution-processed electron-transporting polymer interface energy barriers by in-device hot-electron spectroscopy and ultraviolet photoemission spectroscopy. It not only demonstrates in-device hot-electron spectroscopy as a direct and reliable technique for these studies but also brings it closer to technological applications by working ex situ under ambient conditions. Moreover, this study determines that the contamination layer coming from air exposure does not play any significant role on the energy barrier alignment for charge transport. The theoretical model developed for this work confirms all the experimental observations.

Energy level alignment at planar organic heterojunctions: influence of contact doping and molecular orientation

Planar organic heterojunctions are widely used in photovoltaic cells, light-emitting diodes, and bilayer field-effect transistors. The energy level alignment in the devices plays an important role in obtaining the aspired gap arrangement. Additionally, the π-orbital overlap between the involved molecules defines e.g. the charge-separation efficiency in solar cells due to charge-transfer effects. To account for both aspects, direct/inverse photoemission spectroscopy and near edge x-ray absorption fine structure spectroscopy were used to determine the energy level landscape and the molecular orientation at prototypical planar organic heterojunctions. The combined experimental approach results in a comprehensive model for the electronic and morphological characteristics of the interface between the two investigated molecular semiconductors. Following an introduction on heterojunctions used in devices and on energy levels of organic materials, the energy level alignment of planar organic heterojunctions will be discussed. The observed energy landscape is always determined by the individual arrangement between the energy levels of the molecules and the work function of the electrode. This might result in contact doping due to Fermi level pinning at the electrode for donor/acceptor heterojunctions, which also improves the solar cell efficiency. This pinning behaviour can be observed across an unpinned interlayer and results in charge accumulation at the donor/acceptor interface, depending on the transport levels of the respective organic semiconductors. Moreover, molecular orientation will affect the energy levels because of the anisotropy in ionisation energy and electron affinity and is influenced by the structural compatibility of the involved molecules at the heterojunction. High structural compatibility leads to π-orbital stacking between different molecules at a heterojunction, which is of additional interest for photovoltaic active interfaces and for ground-state charge-transfer.

Organic Optoelectronic Materials: Mechanisms and Applications

Organic (opto)electronic materials have received considerable attention due to their applications in thin-film-transistors, light-emitting diodes, solar cells, sensors, photorefractive devices, and many others. The technological promises include low cost of these materials and the possibility of their room-temperature deposition from solution on large-area and/or flexible substrates. The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials. The focus of the review is on photoinduced processes and on electronic properties important for optoelectronic applications relying on charge carrier photogeneration. Additionally, it highlights the capabilities of various experimental techniques for characterization of these materials, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field. The properties of materials based both on small molecules and on conjugated polymers are considered, and their applications in organic solar cells, photodetectors, and photorefractive devices are discussed.

A New Figure of Merit for Organic Solar Cells with Transport-limited Photocurrents

Compared to their inorganic counterparts, organic semiconductors suffer from relatively low charge carrier mobilities. Therefore, expressions derived for inorganic solar cells to correlate characteristic performance parameters to material properties are prone to fail when applied to organic devices. This is especially true for the classical Shockley-equation commonly used to describe current-voltage (JV)-curves, as it assumes a high electrical conductivity of the charge transporting material. Here, an analytical expression for the JV-curves of organic solar cells is derived based on a previously published analytical model. This expression, bearing a similar functional dependence as the Shockley-equation, delivers a new figure of merit α to express the balance between free charge recombination and extraction in low mobility photoactive materials. This figure of merit is shown to determine critical device parameters such as the apparent series resistance and the fill factor.

Organic heterojunctions: Contact-induced molecular reorientation, interface states, and charge re-distribution

We reveal the rather complex interplay of contact-induced re-orientation and interfacial electronic structure - in the presence of Fermi-level pinning - at prototypical molecular heterojunctions comprising copper phthalocyanine (H16CuPc) and its perfluorinated analogue (F16CuPc), by employing ultraviolet photoelectron and X-ray absorption spectroscopy. For both layer sequences, we find that Fermi-level (EF) pinning of the first layer on the conductive polymer substrate modifies the work function encountered by the second layer such that it also becomes EF-pinned, however, at the interface towards the first molecular layer. This results in a charge transfer accompanied by a sheet charge density at the organic/organic interface. While molecules in the bulk of the films exhibit upright orientation, contact formation at the heterojunction results in an interfacial bilayer with lying and co-facial orientation. This interfacial layer is not EF-pinned, but provides for an additional density of states at the interface that is not present in the bulk. With reliable knowledge of the organic heterojunction's electronic structure we can explain the poor performance of these in photovoltaic cells as well as their valuable function as charge generation layer in electronic devices.

Harvesting the Full Potential of Photons with Organic Solar Cells

A low-bandgap polymer:fullerene blend that has significantly reduced energetic losses from photon absorption to VOC is described. The charge-transfer state and polymer singlet are of nearly equal energy, yet the short-circuit current still reaches 14 mA cm(-2).

Interfacial Depletion Regions: Beyond the Space Charge Limit in Thick Bulk Heterojunctions

Space charge limited photocurrent is typically described as the limiting factor in carrier extraction efficiency for organic bulk heterojunctions with increasing thickness. It successfully characterizes the carrier extraction efficiency in these devices with thin to moderate thickness and dissimilar carrier mobilities. However, in this article we show that space charge limited photocurrent cannot solely explain the intensity dependent spectral response of extremely thick organic photovoltaics. In addition, interfacial depletion regions near the contacts contribute to the field distribution and carrier collection. Here, we describe charge collection efficiency with an optical p-i-n model, allowing for collection from band bending due to mobility-induced and interfacial-doping-induced space charge regions. We verify the model with up to 1400 nm thick spray-coated devices in both p-i-n (conventional) and n-i-p (inverted) architecture, including variations of thickness, illumination intensity, transport materials, and bifacial (semitransparent) devices.

Quantifying the Extent of Contact Doping at the Interface between High Work Function Electrical Contacts and Poly(3-hexylthiophene) (P3HT)

We demonstrate new approaches to the characterization of oxidized regioregular poly(3-hexylthiophene-2,5-diyl) (P3HT) that results from electronic equilibration with device-relevant high work function electrical contacts using high-resolution X-ray (XPS) and ultraviolet (UPS) photoelectron spectroscopy (PES). Careful interpretation of photoemission signals from thiophene sulfur atoms in thin (ca. 20 nm or less) P3HT films provides the ability to uniquely elucidate the products of charge transfer between the polymer and the electrical contact, which is a result of Fermi-level equilibration between the two materials. By comparing high-resolution S 2p core-level spectra to electrochemically oxidized P3HT standards, the extent of the contact doping reaction is quantified, where one in every six thiophene units (ca. 20%) in the first monolayer is oxidized. Finally, angle-resolved XPS of both pure P3HT and its blends with phenyl-C61-butyric acid methyl ester (PCBM) confirms that oxidized P3HT species exist near contacts with work functions greater than ca. 4 eV, providing a means to characterize the interface and "bulk" region of the organic semiconductor in a single film.

Consistent double Gaussian model with non-symmetric potential barriers at contacts for organic diodes

A transport model with double Gaussian density of state (DOS) for organic semiconductors is proposed, with one Gaussian DOS for free carriers and one for trapped carriers.

Conjugated polymer energy level shifts in lithium-ion battery electrolytes

The ionization potentials (IPs) and electron affinities (EAs) of widely used conjugated polymers are evaluated by cyclic voltammetry (CV) in conventional electrochemical and lithium-ion battery media, and also by ultraviolet photoelectron spectroscopy (UPS) in vacuo. By comparing the data obtained in the different systems, it is found that the IPs of the conjugated polymer films determined by conventional CV (IPC) can be correlated with UPS-measured HOMO energy levels (EH,UPS) by the relationship EH,UPS = (1.14 ± 0.23) × qIPC + (4.62 ± 0.10) eV, where q is the electron charge. It is also found that the EAs of the conjugated polymer films measured via CV in conventional (EAC) and Li(+) battery (EAB) media can be linearly correlated by the relationship EAB = (1.07 ± 0.13) × EAC + (2.84 ± 0.22) V. The slopes and intercepts of these equations can be correlated with the dielectric constants of the polymer film environments and the redox potentials of the reference electrodes, as modified by the surrounding electrolyte, respectively.

Fundamental limitations for electroluminescence in organic dual-gate field-effect transistors

A dual-gate organic field-effect transistor is investigated for electrically pumped lasing. The two gates can independently accumulate electrons and holes, yielding current densities exceeding the lasing threshold. Here, the aim is to force the electrons and holes to recombine by confining the charges in a single semiconducting film. It is found that independent hole and electron accumulation is mutually exclusive with vertical recombination and light emission.

Organic semiconductor density of states controls the energy level alignment at electrode interfaces

Minimizing charge carrier injection barriers and extraction losses at interfaces between organic semiconductors and metallic electrodes is critical for optimizing the performance of organic (opto-) electronic devices. Here, we implement a detailed electrostatic model, capable of reproducing the alignment between the electrode Fermi energy and the transport states in the organic semiconductor both qualitatively and quantitatively. Covering the full phenomenological range of interfacial energy level alignment regimes within a single, consistent framework and continuously connecting the limiting cases described by previously proposed models allows us to resolve conflicting views in the literature. Our results highlight the density of states in the organic semiconductor as a key factor. Its shape and, in particular, the energy distribution of electronic states tailing into the fundamental gap is found to determine both the minimum value of practically achievable injection barriers as well as their spatial profile, ranging from abrupt interface dipoles to extended band-bending regions.

Understanding and being able to predict alignment between the electrode Fermi energy and the transport states in the organic semiconductor is important. Here, the authors report an electrostatic model, capable of reproducing the full range of interfacial energy level alignment regimes.

Energy level realignment in weakly interacting donor-acceptor binary molecular networks

Understanding the effect of intermolecular and molecule-substrate interactions on molecular electronic states is key to revealing the energy level alignment mechanism at organic-organic heterojunctions or organic-inorganic interfaces. In this paper, we investigate the energy level alignment mechanism in weakly interacting donor-acceptor binary molecular superstructures, comprising copper hexadecafluorophthalocyanine (F16CuPc) intermixed with copper phthalocyanine (CuPc), or manganese phthalocynine (MnPc) on graphite. The molecular electronic structures have been systematically studied by in situ ultraviolet photoelectron spectroscopy (UPS) and low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/STS) experiments and corroborated by density functional theory (DFT) calculations. As demonstrated by the UPS and LT-STM/STS measurements, the observed unusual energy level realignment (i.e., a large downward shift in donor HOMO level and a corresponding small upward shift in acceptor HOMO level) in the CuPc-F16CuPc binary superstructures originates from the balance between intermolecular and molecule-substrate interactions. The enhanced intermolecular interactions through the hydrogen bonding between neighboring CuPc and F16CuPc can stabilize the binary superstructures and modify the local molecular electronic states. The obvious molecular energy level shift was explained by gap-state-mediated interfacial charge transfer.

Band-bending in organic semiconductors: the role of alkali-halide interlayers

Band-bending in organic semiconductors, occurring at metal/alkali-halide cathodes in organic-electronic devices, is experimentally revealed and electrostatically modeled. Metal-to-organic charge transfer through the insulator, rather than doping of the organic by alkali-metal ions, is identified as the origin of the observed band-bending, which is in contrast to the localized interface dipole occurring without the insulating buffer layer.

The first decade of organic spintronics research

The significant milestones in organic spintronics achieved during the first decade of research are reviewed.

Molecular doping enhances photoconductivity in polymer bulk heterojunction solar cells

Addition of low concentrations (<1:100, dopant:donor) of a fluorinated p-type dopant, F4-TCNQ leads to a considerable enhancement of the photocurrent in PCDTBT:PC70 BM bulk heterojunction solar cells. As a result, the power conversion efficiency increases from 6.41% to 7.94 %.