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Meisenheimer P, Moore G, Zhou S, Zhang H, Huang X, Husain S, Chen X, Martin LW, Persson KA, Griffin S, Caretta L, Stevenson P, Ramesh R. Switching the spin cycloid in BiFeO 3 with an electric field. Nat Commun 2024; 15:2903. [PMID: 38575570 PMCID: PMC10995181 DOI: 10.1038/s41467-024-47232-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Accepted: 03/26/2024] [Indexed: 04/06/2024] Open
Abstract
Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and canted antiferromagnetism at room temperature, making it a unique candidate in the development of electric-field controllable magnetic devices. The magnetic moments in BiFeO3 are arranged into a spin cycloid, resulting in unique magnetic properties which are tied to the ferroelectric order. Previous understanding of this coupling has relied on average, mesoscale measurements. Using nitrogen vacancy-based diamond magnetometry, we observe the magnetic spin cycloid structure of BiFeO3 in real space. This structure is magnetoelectrically coupled through symmetry to the ferroelectric polarization and this relationship is maintained through electric field switching. Through a combination of in-plane and out-of-plane electrical switching, coupled with ab initio studies, we have discovered that the epitaxy from the substrate imposes a magnetoelastic anisotropy on the spin cycloid, which establishes preferred cycloid propagation directions. The energy landscape of the cycloid is shaped by both the ferroelectric degree of freedom and strain-induced anisotropy, restricting the spin spiral propagation vector to changes to specific switching events.
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Affiliation(s)
- Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA.
| | - Guy Moore
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Shiyu Zhou
- Department of Physics, Brown University, Providence, RI, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
| | - Sajid Husain
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Xianzhe Chen
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lane W Martin
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice Advanced Materials Institute, Rice University, Houston, TX, USA
- Department of Chemistry, Rice University, Houston, TX, USA
| | - Kristin A Persson
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Sinéad Griffin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
| | - Lucas Caretta
- School of Engineering, Brown University, Providence, RI, USA
| | - Paul Stevenson
- Department of Physics, Northeastern University, Boston, MA, USA.
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California, Berkeley, CA, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, USA
- Department of Physics and Astronomy, Department of Materials Science and Nanoengineering, Rice Advanced Materials Institute, Rice University, Houston, TX, USA
- Department of Physics, University of California, Berkeley, CA, USA
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2
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Husain S, Harris I, Gao G, Li X, Meisenheimer P, Shi C, Kavle P, Choi CH, Kim TY, Kang D, Behera P, Perrodin D, Guo H, M Tour J, Han Y, Martin LW, Yao Z, Ramesh R. Low-temperature grapho-epitaxial La-substituted BiFeO 3 on metallic perovskite. Nat Commun 2024; 15:479. [PMID: 38212317 PMCID: PMC10784590 DOI: 10.1038/s41467-024-44728-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 01/03/2024] [Indexed: 01/13/2024] Open
Abstract
Bismuth ferrite has garnered considerable attention as a promising candidate for magnetoelectric spin-orbit coupled logic-in-memory. As model systems, epitaxial BiFeO3 thin films have typically been deposited at relatively high temperatures (650-800 °C), higher than allowed for direct integration with silicon-CMOS platforms. Here, we circumvent this problem by growing lanthanum-substituted BiFeO3 at 450 °C (which is reasonably compatible with silicon-CMOS integration) on epitaxial BaPb0.75Bi0.25O3 electrodes. Notwithstanding the large lattice mismatch between the La-BiFeO3, BaPb0.75Bi0.25O3, and SrTiO3 (001) substrates, all the layers in the heterostructures are well ordered with a [001] texture. Polarization mapping using atomic resolution STEM imaging and vector mapping established the short-range polarization ordering in the low temperature grown La-BiFeO3. Current-voltage, pulsed-switching, fatigue, and retention measurements follow the characteristic behavior of high-temperature grown La-BiFeO3, where SrRuO3 typically serves as the metallic electrode. These results provide a possible route for realizing epitaxial multiferroics on complex-oxide buffer layers at low temperatures and opens the door for potential silicon-CMOS integration.
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Affiliation(s)
- Sajid Husain
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Isaac Harris
- Department of Physics, University of California, Berkeley, CA, 94720, USA
| | - Guanhui Gao
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Xinyan Li
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Peter Meisenheimer
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chuqiao Shi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Pravin Kavle
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Chi Hun Choi
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Tae Yeon Kim
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Deokyoung Kang
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Piush Behera
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
| | - Didier Perrodin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
| | - Hua Guo
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - James M Tour
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
- Department of Chemistry, Rice University, Houston, TX, 77005, USA
| | - Yimo Han
- Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA
| | - Lane W Martin
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA
| | - Zhi Yao
- Applied Mathematics and Computational Research Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
| | - Ramamoorthy Ramesh
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
- Department of Physics, University of California, Berkeley, CA, 94720, USA.
- Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
- Department of Physics and Astronomy, Rice University, Houston, TX, 77005, USA.
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3
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Dufour P, Abdelsamie A, Fischer J, Finco A, Haykal A, Sarott MF, Varotto S, Carrétéro C, Collin S, Godel F, Jaouen N, Viret M, Trassin M, Bouzehouane K, Jacques V, Chauleau JY, Fusil S, Garcia V. Onset of Multiferroicity in Prototypical Single-Spin Cycloid BiFeO 3 Thin Films. NANO LETTERS 2023; 23:9073-9079. [PMID: 37737821 DOI: 10.1021/acs.nanolett.3c02875] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/23/2023]
Abstract
In the room-temperature magnetoelectric multiferroic BiFeO3, the noncollinear antiferromagnetic state is coupled to the ferroelectric order, opening applications for low-power electric-field-controlled magnetic devices. While several strategies have been explored to simplify the ferroelectric landscape, here we directly stabilize a single-domain ferroelectric and spin cycloid state in epitaxial BiFeO3 (111) thin films grown on orthorhombic DyScO3 (011). Comparing them with films grown on SrTiO3 (111), we identify anisotropic in-plane strain as a powerful handle for tailoring the single antiferromagnetic state. In this single-domain multiferroic state, we establish the thickness limit of the coexisting electric and magnetic orders and directly visualize the suppression of the spin cycloid induced by the magnetoelectric interaction below the ultrathin limit of 1.4 nm. This as-grown single-domain multiferroic configuration in BiFeO3 thin films opens an avenue both for fundamental investigations and for electrically controlled noncollinear antiferromagnetic spintronics.
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Affiliation(s)
- Pauline Dufour
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Amr Abdelsamie
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Johanna Fischer
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Aurore Finco
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Angela Haykal
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | - Martin F Sarott
- Department of Materials, ETH Zurich, 8093 Zurich, Switzerland
| | - Sara Varotto
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Cécile Carrétéro
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Sophie Collin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Florian Godel
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | | | - Michel Viret
- SPEC, CEA, CNRS, Université Paris-Saclay, 91191 Gif-sur-Yvette, France
| | - Morgan Trassin
- Department of Materials, ETH Zurich, 8093 Zurich, Switzerland
| | - Karim Bouzehouane
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
| | - Vincent Jacques
- Laboratoire Charles Coulomb, Université de Montpellier and CNRS, 34095 Montpellier, France
| | | | - Stéphane Fusil
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
- Université d'Evry, Université Paris-Saclay, 91000 Evry, France
| | - Vincent Garcia
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 91767 Palaiseau, France
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4
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Jiang Y, Wu X, Niu J, Zhou Y, Jiang N, Guo F, Yang B, Zhao S. Gradient Strain-Induced Room-Temperature Ferroelectricity in Magnetic Double-Perovskite Superlattices. SMALL METHODS 2023; 7:e2201246. [PMID: 36782074 DOI: 10.1002/smtd.202201246] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Revised: 01/19/2023] [Indexed: 06/09/2023]
Abstract
Single-phase multiferroics suffer from a fundamental contradiction between polarity and magnetism in d0 electronic configuration, motivating studies of unconventional ferroelectricity in magnetic oxides. However, low critical temperature and polarization still need to be overcome. Here, it is reported that the switchable polarization behavior at room temperature in [(La2 NiMnO6 )/(La2 CoMnO6 )]n double-perovskite magnetic superlattice films is achieved by engineering a microstructure with gradient strains, and the ferromagnetic Curie temperature did not show a rapid decrease. The synergy of gradient strains and superlattice components plays a decisive role in inducing ferroelectricity via the tilting or rotation of various oxygen octahedra. Such distortion responses to gradient strains are accompanied by slight magnetic fluctuations, maximizing the preservation of the initial magnetic exchange interactions, which alleviates the contradiction of multiferroic coexistence to a certain extent. This work confirms the room-temperature ferroelectricity in double-perovskite superlattices and provides a preferred strategy for confronting the difficulty of multiferroic coexistence in single-phase materials.
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Affiliation(s)
- Yaoxiang Jiang
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Xin Wu
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Jianguo Niu
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Yunpeng Zhou
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Ning Jiang
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Fei Guo
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Bo Yang
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
| | - Shifeng Zhao
- Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, P. R. China
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5
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Li Z, Chen B, Shan S, Zhang Y. Magnetization reversal of perpendicular magnetic anisotropy regulated by ferroelectric polarization in CoFe 3N/BaTiO 3 heterostructures: first-principles calculations. RSC Adv 2023; 13:9924-9931. [PMID: 37034450 PMCID: PMC10075283 DOI: 10.1039/d3ra01842c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/21/2023] [Accepted: 03/29/2023] [Indexed: 04/11/2023] Open
Abstract
Exploring the electric-field switching of perpendicular magnetic anisotropy (PMA) in multiferroic heterostructures has important physical significance, which attracts great interest due to its promising application for energy-efficient information storage. Herewith, we investigate the effect of ferroelectric polarization on magnetic anisotropy in CoFe3N/BaTiO3 heterostructures using first-principles calculations. The calculations reveal that the magnetic anisotropy of CoFe3N can be regulated by ferroelectric polarization of BaTiO3. When the ferroelectric polarization reverses, the PMA of FeCo-TiO2 and FeN-BaO configurations remains, but in the FeN-TiO2 and FeCo-BaO cases, magnetic anisotropy inverses between out-of-plane and in-plane direction. Further orbital-resolved analysis indicates that the transition of magnetic anisotropy is mainly attributed to the orbital hybridization of interfacial Fe/Co atoms with O atoms induced by the magnetoelectric effect. This study may open an effective approach toward modulating PMA and lays a foundation to the development of low energy consumption memory devices.
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Affiliation(s)
- Zirun Li
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Bo Chen
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Shimin Shan
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
| | - Yongmei Zhang
- School of Semiconductor and Physics, North University of China Taiyuan 030051 China
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6
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Yu D, Ga Y, Liang J, Jia C, Yang H. Voltage-Controlled Dzyaloshinskii-Moriya Interaction Torque Switching of Perpendicular Magnetization. PHYSICAL REVIEW LETTERS 2023; 130:056701. [PMID: 36800473 DOI: 10.1103/physrevlett.130.056701] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2022] [Revised: 09/30/2022] [Accepted: 12/20/2022] [Indexed: 06/18/2023]
Abstract
Magnetization switching is the most important operation in spintronic devices. In modern nonvolatile magnetic random-access memory (MRAM), it is usually realized by spin-transfer torque (STT) or spin-orbit torque (SOT). However, both STT and SOT MRAM require current to drive magnetization switching, which will cause Joule heating. Here, we report an alternative mechanism, Dzyaloshinskii-Moriya interaction (DMI) torque, that can realize magnetization switching fully controlled by voltage pulses. We find that a consequential voltage-controlled reversal of DMI chirality in multiferroics can lead to continued expansion of a skyrmion thanks to the DMI torque. Enough DMI torque will eventually make the skyrmion burst into a quasiuniform ferromagnetic state with reversed magnetization, thus realizing the switching of a perpendicular magnet. The discovery is demonstrated in two-dimensional multiferroics, CuCrP_{2}Se_{6} and CrN, using first-principles calculations and micromagnetic simulations. As an example, we applied the DMI torque for simulating leaky-integrate-fire functionality of biological neurons. Our discovery of DMI torque switching of perpendicular magnetization provides tremendous potential toward magnetic-field-free and current-free spintronic devices, and neuromorphic computing as well.
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Affiliation(s)
- Dongxing Yu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Yonglong Ga
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Jinghua Liang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chenglong Jia
- Key Laboratory for Magnetism and Magnetic Materials of MOE and Lanzhou Center for Theoretical Physics, Lanzhou University, Lanzhou 730000, China
| | - Hongxin Yang
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
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7
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Min KH, Lee DH, Choi SJ, Lee IH, Seo J, Kim DW, Ko KT, Watanabe K, Taniguchi T, Ha DH, Kim C, Shim JH, Eom J, Kim JS, Jung S. Tunable spin injection and detection across a van der Waals interface. NATURE MATERIALS 2022; 21:1144-1149. [PMID: 35927432 DOI: 10.1038/s41563-022-01320-3] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2021] [Accepted: 06/24/2022] [Indexed: 06/15/2023]
Abstract
Van der Waals heterostructures with two-dimensional magnets offer a magnetic junction with an atomically sharp and clean interface. This attribute ensures that the magnetic layers maintain their intrinsic spin-polarized electronic states and spin-flipping scattering processes at a minimum level, a trait that can expand spintronic device functionalities. Here, using a van der Waals assembly of ferromagnetic Fe3GeTe2 with non-magnetic hexagonal boron nitride and WSe2 layers, we demonstrate electrically tunable, highly transparent spin injection and detection across the van der Waals interfaces. By varying an electrical bias, the net spin polarization of the injected carriers can be modulated and reversed in polarity, which leads to sign changes of the tunnelling magnetoresistance. We attribute the spin polarization reversals to sizable contributions from high-energy localized spin states in the metallic ferromagnet, so far inaccessible in conventional magnetic junctions. Such tunability of the spin-valve operations opens a promising route for the electronic control of next-generation low-dimensional spintronic device applications.
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Affiliation(s)
- Keun-Hong Min
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
- Department of Physics and Astronomy, Sejong University, Seoul, Republic of Korea
| | - Duk Hyun Lee
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
| | - Sang-Jun Choi
- Institute for Theoretical Physics and Astrophysics, University of Würzburg, Würzburg, Germany
| | - In-Ho Lee
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
| | - Junho Seo
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang, Republic of Korea
| | - Dong Wook Kim
- Department of Chemistry, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Kyung-Tae Ko
- Research Center for Materials Analysis, Korea Basic Science Institute, Daejeon, Republic of Korea
| | - Kenji Watanabe
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan
| | - Takashi Taniguchi
- Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Japan
| | - Dong Han Ha
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, Republic of Korea
| | - Changyoung Kim
- Department of Physics and Astronomy, Seoul National University, Seoul, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science, Seoul, Republic of Korea
| | - Ji Hoon Shim
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea
- Department of Chemistry, Pohang University of Science and Technology, Pohang, Republic of Korea
| | - Jonghwa Eom
- Department of Physics and Astronomy, Sejong University, Seoul, Republic of Korea.
| | - Jun Sung Kim
- Department of Physics, Pohang University of Science and Technology, Pohang, Republic of Korea.
- Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science, Pohang, Republic of Korea.
| | - Suyong Jung
- Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science, Daejeon, Republic of Korea.
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8
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Hassanpour E, Zemp Y, Tokunaga Y, Taguchi Y, Tokura Y, Lottermoser T, Fiebig M, Weber MC. Magnetoelectric transfer of a domain pattern. Science 2022; 377:1109-1112. [PMID: 36048962 DOI: 10.1126/science.abm3058] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2022]
Abstract
The utility of ferroic materials is determined by the formation of domains and their poling behavior under externally applied fields. For multiferroics, which exhibit several types of ferroic order at once, it is also relevant how the domains of the coexisting ferroic states couple and what kind of functionality this might involve. In this work, we demonstrate the reversible transfer of a domain pattern between magnetization and electric-polarization space in the multiferroic Dy0.7Tb0.3FeO3. A magnetic field transfers a ferromagnetic domain pattern into an identical ferroelectric domain pattern while erasing it at its magnetic origin. Reverse transfer completes the cycle. To assess the generality of our experiment, we elaborate on its conceptual origin and aspects of application.
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Affiliation(s)
- Ehsan Hassanpour
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland.,Department of Physics, ETH Zurich, 8093 Zürich, Switzerland
| | - Yannik Zemp
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland
| | - Yusuke Tokunaga
- Department of Advanced Materials Science, The University of Tokyo, Chiba 277-8561, Japan
| | - Yasujiro Taguchi
- RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan
| | - Yoshinori Tokura
- RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan.,Department of Applied Physics and Tokyo College, The University of Tokyo, Tokyo 113-8656, Japan
| | | | - Manfred Fiebig
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland.,RIKEN Center for Emergent Matter Science (CEMS), Saitama 351-0198, Japan
| | - Mads C Weber
- Department of Materials, ETH Zurich, 8093 Zürich, Switzerland.,Institut des Molécules et Matériaux du Mans, UMR 6283 CNRS, Le Mans Université, 72085 Le Mans, France
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9
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Parsonnet E, Caretta L, Nagarajan V, Zhang H, Taghinejad H, Behera P, Huang X, Kavle P, Fernandez A, Nikonov D, Li H, Young I, Analytis J, Ramesh R. Nonvolatile Electric Field Control of Thermal Magnons in the Absence of an Applied Magnetic Field. PHYSICAL REVIEW LETTERS 2022; 129:087601. [PMID: 36053684 DOI: 10.1103/physrevlett.129.087601] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/07/2022] [Revised: 03/07/2022] [Accepted: 05/27/2022] [Indexed: 06/15/2023]
Abstract
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO_{3}, to demonstrate nonvolatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. These findings are an important step toward magnon-based devices, where electric-field-only control is highly desirable.
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Affiliation(s)
- Eric Parsonnet
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Lucas Caretta
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Vikram Nagarajan
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Hongrui Zhang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Hossein Taghinejad
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Piush Behera
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
| | - Xiaoxi Huang
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Pravin Kavle
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Abel Fernandez
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
| | - Dmitri Nikonov
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - Hai Li
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - Ian Young
- Components Research, Intel Corporation, Hillsboro, Oregon 97124, USA
| | - James Analytis
- Department of Physics, University of California, Berkeley, California 94720, USA
| | - Ramamoorthy Ramesh
- Department of Physics, University of California, Berkeley, California 94720, USA
- Department of Materials Science and Engineering, University of California, Berkeley, California 94720, USA
- Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
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10
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Hu C, Chen J, Du E, Ju W, An Y, Gong SJ. Ferroelectric control of band alignments and magnetic properties in the two-dimensional multiferroic VSe 2/In 2Se 3. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:425801. [PMID: 35878601 DOI: 10.1088/1361-648x/ac8406] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/03/2022] [Accepted: 07/25/2022] [Indexed: 06/15/2023]
Abstract
Our first-principles evidence shows that the two-dimensional (2D) multiferroic VSe2/In2Se3experiences continuous change of electronic structures, i.e. with the change of the ferroelectric (FE) polarization of In2Se3, the heterostructure can possess type-I, -II, and -III band alignments. When the FE polarization points from In2Se3to VSe2, the heterostructure has a type-III band alignment, and the charge transfer from In2Se3into VSe2induces half-metallicity. With reversal of the FE polarization, the heterostructure enters the type-I band alignment, and the spin-polarized current is turned off. When the In2Se3is depolarized, the heterostructure has a type-II band alignment. In addition, influence of the FE polarization on magnetism and magnetic anisotropy energy of VSe2was also analyzed, through which we reveal the interfacial magnetoelectric coupling effects. Our investigation about VSe2/In2Se3predicts its wide applications in the fields of both 2D spintronics and multiferroics.
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Affiliation(s)
- Chen Hu
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Ju Chen
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Erwei Du
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Weiwei Ju
- College of Physics and Engineering and Henan Key Laboratory of Photoelectric Energy Storage Materials and Applications, Henan University of Science and Technology, Luoyang 471023, People's Republic of China
| | - Yipeng An
- School of Physics and Henan Key Laboratory of Boron Chemistry and Advanced Energy Materials, Henan Normal University, Xinxiang 453007, People's Republic of China
| | - Shi-Jing Gong
- School of Physics and Electronic Science, East China Normal University, Shanghai, 200241, People's Republic of China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, People's Republic of China
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11
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Kuo CY, Liou YD, Hu Z, Liao SC, Tsai HM, Fu HW, Hua CY, Chen YC, Lin HJ, Tanaka A, Chen CT, Yang JC, Chang CF. Photonic-Crafting of Non-Volatile and Rewritable Antiferromagnetic Spin Textures with Drastic Difference in Electrical Conductivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200610. [PMID: 35312103 DOI: 10.1002/adma.202200610] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/19/2022] [Revised: 03/15/2022] [Indexed: 06/14/2023]
Abstract
Antiferromagnetic spintronics is an emerging field of non-volatile data storage and information processing. The zero net magnetization and zero stray fields of antiferromagnetic materials eliminate interference between neighbor units, leading to high-density memory integrations. However, this invisible magnetic character at the same time also poses a great challenge in controlling and detecting magnetic states in antiferromagnets. Here, two antiferromagnetic spin states close in energy in strained BiFeO3 thin films at room temperature are discovered. It can be reversibly switched between these two non-volatile antiferromagnetic states by a moderate magnetic field and a non-contact optical approach. Importantly, the conductivity of the areas with each antiferromagnetic textures is drastically different. It is conclusively demonstrated the capability of optical writing and electrical reading of these newly discovered bistable antiferromagnetic states in the BiFeO3 thin films.
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Affiliation(s)
- Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Yi-De Liou
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Zhiwei Hu
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, 01187, Germany
| | - Sheng-Chieh Liao
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, 01187, Germany
| | - Huang-Ming Tsai
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Huang-Wen Fu
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Chih-Yu Hua
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Yi-Chun Chen
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Hong-Ji Lin
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Arata Tanaka
- Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima, 739-8530, Japan
| | - Chien-Te Chen
- National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu, 30076, Taiwan
| | - Jan-Chi Yang
- Department of Physics, National Cheng Kung University, Tainan, 70101, Taiwan
- Center for Quantum Frontiers of Research & Technology (QFort), National Cheng Kung University, Tainan, 70101, Taiwan
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, 01187, Germany
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12
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Ma Z, Tan L, Huang H, He L, Chen J, Lu H, Deng S, Yin W, Zhang J, Tian H, Du R, Arnold DC, Phillips AE, Dove MT. Neutron powder-diffraction study of phase transitions in strontium-doped bismuth ferrite: 1. Variation with chemical composition. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:255401. [PMID: 35366646 DOI: 10.1088/1361-648x/ac6389] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2021] [Accepted: 04/01/2022] [Indexed: 06/14/2023]
Abstract
We report results from a study of the crystal and magnetic structures of strontium-doped BiFeO3using neutron powder diffraction and the Rietveld method. Measurements were obtained over a wide range of temperatures from 300-800 K for compositions between 10%-16% replacement of bismuth by strontium. The results show a clear variation of the two main structural deformations-symmetry-breaking rotations of the FeO6octahedra and polar ionic displacements that give ferroelectricity-with chemical composition, but relatively little variation with temperature. On the other hand, the antiferromagnetic order shows a variation with temperature and a second-order phase transition consistent with the classical Heisenberg model. There is, however, very little variation in the behaviour of the antiferromagnetism with chemical composition, and hence with the degree of the structural symmetry-breaking distortions. We therefore conclude that there is no significant coupling between antiferromagnetism and ferroelectricity in Sr-doped BiFeO3and, by extension, in pure BiFeO3.
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Affiliation(s)
- Zhengzheng Ma
- Department of Physics, School of Sciences, Wuhan University of Technology, 205 Luoshi Road, Hongshan district, Wuhan, Hubei, 430070, People's Republic of China
| | - Lei Tan
- Department of Physics, School of Sciences, Wuhan University of Technology, 205 Luoshi Road, Hongshan district, Wuhan, Hubei, 430070, People's Republic of China
| | - Haijun Huang
- Department of Physics, School of Sciences, Wuhan University of Technology, 205 Luoshi Road, Hongshan district, Wuhan, Hubei, 430070, People's Republic of China
| | - Lunhua He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
| | - Jie Chen
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Huaile Lu
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Sihao Deng
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wen Yin
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Junrong Zhang
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Haolai Tian
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Rong Du
- Spallation Neutron Source Science Center, Dongguan, Guangdong 523803, People's Republic of China
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Donna C Arnold
- School of Physical Sciences, University of Kent, Canterbury, Kent CT2 7NH, United Kingdom
| | - Anthony E Phillips
- School of Physical and Chemical Sciences, Queen Mary University of London, Mile End Road, London, E1 4NS, United Kingdom
| | - Martin T Dove
- Department of Physics, School of Sciences, Wuhan University of Technology, 205 Luoshi Road, Hongshan district, Wuhan, Hubei, 430070, People's Republic of China
- School of Physical and Chemical Sciences, Queen Mary University of London, Mile End Road, London, E1 4NS, United Kingdom
- College of Computer Science, Sichuan University, Chengdu, Sichuan 610065, People's Republic of China
- School of Mechanical Engineering, Dongguan University of Technology, 1st Daxue Road, Songshan Lake, Dongguan, Guangdong 523000, People's Republic of China
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13
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Rana B, Mondal AK, Bandyopadhyay S, Barman A. Applications of nanomagnets as dynamical systems: I. NANOTECHNOLOGY 2021; 33:062007. [PMID: 34633310 DOI: 10.1088/1361-6528/ac2e75] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2021] [Accepted: 10/11/2021] [Indexed: 06/13/2023]
Abstract
When magnets are fashioned into nanoscale elements, they exhibit a wide variety of phenomena replete with rich physics and the lure of tantalizing applications. In this topical review, we discuss some of these phenomena, especially those that have come to light recently, and highlight their potential applications. We emphasize what drives a phenomenon, what undergirds the dynamics of the system that exhibits the phenomenon, how the dynamics can be manipulated, and what specific features can be harnessed for technological advances. For the sake of balance, we point out both advantages and shortcomings of nanomagnet based devices and systems predicated on the phenomena we discuss. Where possible, we chart out paths for future investigations that can shed new light on an intriguing phenomenon and/or facilitate both traditional and non-traditional applications.
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Affiliation(s)
- Bivas Rana
- Institute of Spintronics and Quantum Information, Faculty of Physics, Adam Mickiewicz University in Poznań, Uniwersytetu Poznanskiego 2, Poznań 61-614, Poland
- Center for Emergent Matter Science, RIKEN, 2-1 Hirosawa, Wako 351-0198, Japan
| | - Amrit Kumar Mondal
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
| | - Supriyo Bandyopadhyay
- Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, VA, 23284, United States of America
| | - Anjan Barman
- Department of Condensed Matter Physics and Material Sciences, S. N. Bose National Centre for Basic Sciences, Block JD, Sector III, Salt Lake, Kolkata 700 106, India
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14
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Yao Y, Zhan X, Sendeku MG, Yu P, Dajan FT, Zhu C, Li N, Wang J, Wang F, Wang Z, He J. Recent progress on emergent two-dimensional magnets and heterostructures. NANOTECHNOLOGY 2021; 32:472001. [PMID: 34315143 DOI: 10.1088/1361-6528/ac17fd] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/03/2021] [Accepted: 07/26/2021] [Indexed: 06/13/2023]
Abstract
Intrinsic two-dimensional (2D) magnetic materials own strong long-range magnetism while their characteristics of the ultrathin thickness and smooth surface provide an ideal platform for manipulating the magnetic properties at 2D limit. This makes them to be potential candidates in various spintronic applications compared to their corresponding bulk counterparts. The discovery of magnetic ordering in 2D CrI3and Gr2Ge2Te6nanostructures stimulated tremendous research interest in both experimental and theoretical studies on various intrinsic magnets at 2D limit. This review gives a comprehensive overview of the recent progress on the emergent 2D magnets and heterostructures. Firstly, several kinds of typical 2D magnetic materials discovered in the last few years and their fabrication methods are summarized in detail. Secondly, the current strategies for manipulating magnetic properties in 2D materials are further discussed. Then, the recent advances on the construction of representative van der Waals magnetic heterostructures and their respective performance are provided. With the hope of motivating the researchers in this area, we finally offered the challenges and outlook on 2D magnetism.
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Affiliation(s)
- Yuyu Yao
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Xueying Zhan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Marshet Getaye Sendeku
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Peng Yu
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Fekadu Tsegaye Dajan
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Chuanchao Zhu
- Institute for Quantum Information & State Key Laboratory of High Performance Computing, National University of Defense Technology, Changsha 410073, People's Republic of China
| | - Ningning Li
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Sino-Danish College, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Sino-Danish Center for Education, Beijing 100049, People's Republic of China
| | - Junjun Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Feng Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
| | - Zhenxing Wang
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jun He
- CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, People's Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China
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15
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Wang J, Yang T, Wang B, Rzchowski MS, Eom C, Chen L. Strain‐Induced Interlayer Parallel‐to‐Antiparallel Magnetic Transitions of Twisted Bilayers. ADVANCED THEORY AND SIMULATIONS 2021. [DOI: 10.1002/adts.202000215] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Jian‐Jun Wang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Tian‐Nan Yang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Bo Wang
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
| | - Mark S. Rzchowski
- Department of Physics University of Wisconsin‐Madison Madison WI 53706 USA
| | - Chang‐Beom Eom
- Department of Materials Science and Engineering University of Wisconsin‐Madison Madison WI 53706 USA
| | - Long‐Qing Chen
- Department of Materials Science and Engineering The Pennsylvania State University University Park, PA, 16802 USA
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16
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Gradauskaite E, Meisenheimer P, Müller M, Heron J, Trassin M. Multiferroic heterostructures for spintronics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0072] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/06/2023]
Abstract
AbstractFor next-generation technology, magnetic systems are of interest due to the natural ability to store information and, through spin transport, propagate this information for logic functions. Controlling the magnetization state through currents has proven energy inefficient. Multiferroic thin-film heterostructures, combining ferroelectric and ferromagnetic orders, hold promise for energy efficient electronics. The electric field control of magnetic order is expected to reduce energy dissipation by 2–3 orders of magnitude relative to the current state-of-the-art. The coupling between electrical and magnetic orders in multiferroic and magnetoelectric thin-film heterostructures relies on interfacial coupling though magnetic exchange or mechanical strain and the correlation between domains in adjacent functional ferroic layers. We review the recent developments in electrical control of magnetism through artificial magnetoelectric heterostructures, domain imprint, emergent physics and device paradigms for magnetoelectric logic, neuromorphic devices, and hybrid magnetoelectric/spin-current-based applications. Finally, we conclude with a discussion of experiments that probe the crucial dynamics of the magnetoelectric switching and optical tuning of ferroelectric states towards all-optical control of magnetoelectric switching events.
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Affiliation(s)
- Elzbieta Gradauskaite
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - Peter Meisenheimer
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Marvin Müller
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
| | - John Heron
- Department of Materials Science and Engineering , University of Michigan , Ann Arbor , MI 48109 USA
| | - Morgan Trassin
- Department of Materials , ETH Zurich , Vladimir-Prelog-Weg 4 , Zurich , 8093 Switzerland
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17
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Liao YC, Nikonov DE, Dutta S, Chang SC, Hsu CS, Young IA, Naeemi A. Understanding the Switching Mechanisms of the Antiferromagnet/Ferromagnet Heterojunction. NANO LETTERS 2020; 20:7919-7926. [PMID: 33054222 DOI: 10.1021/acs.nanolett.0c01852] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Electric-field-driven spintronic devices are considered promising candidates for beyond CMOS logic and memory applications thanks to their potential for ultralow energy switching and nonvolatility. In this work, we have developed a comprehensive modeling framework to understand the fundamental physics of the switching mechanisms of the antiferromagnet/ferromagnet heterojunction by taking BiFeO3/CoFe heterojunctions as an example. The models are calibrated with experimental results and demonstrate that the switching of the ferromagnet in the antiferromagnet/ferromagnet heterojunction is caused by the rotation of the Neel vector in the antiferromagnet and is not driven by the unidirectional exchange bias at the interface as was previously speculated. Additionally, we demonstrate that the fundamental limit of the switching time of the ferromagnet is in the subnanosecond regime. The geometric dependence and the thermal stability of the antiferromagnet/ferromagnet heterojunction are also explored. Our simulation results provide the critical metrics for designing magnetoelectric devices.
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Affiliation(s)
- Yu-Ching Liao
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Dmitri E Nikonov
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Sourav Dutta
- Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States
| | - Sou-Chi Chang
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Chia-Sheng Hsu
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Ian A Young
- Components Research, Technology & Manufacturing Group Intel Corporation, Hillsboro, Oregon 97124, United States
| | - Azad Naeemi
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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18
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Du EW, Gong SJ, Tang X, Chu J, Rappe AM, Gong C. Ferroelectric Switching of Pure Spin Polarization in Two-Dimensional Electron Gas. NANO LETTERS 2020; 20:7230-7236. [PMID: 32786931 DOI: 10.1021/acs.nanolett.0c02584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional electron gas (2DEG) created at compound interfaces can exhibit a broad range of exotic physical phenomena, including quantum Hall phase, emergent ferromagnetism, and superconductivity. Although electron spin plays key roles in these phenomena, the fundamental understanding and application prospects of such emergent interfacial states have been largely impeded by the lack of purely spin-polarized 2DEG. In this work, by first-principles calculations of the multiferroic superlattice GeTe/MnTe, we find the ferroelectric polarization of GeTe is concurrent with the half-metallic 2DEG at interfaces. Remarkably, the pure spin polarization of the 2DEG can be created and annihilated by polarizing and depolarizing the ferroelectrics and can be switched (between pure spin-up and pure spin-down) by flipping the ferroelectric polarization. Given the electric-field amplification effect of ferroelectric electronics, we envision multiferroic superlattices could open up new opportunities for low-power, high-efficiency spintronic devices such as spin field-effect transistors.
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Affiliation(s)
- Er-Wei Du
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Shi-Jing Gong
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
- Shanghai Institute of Intelligent Electronics & Systems, Fudan University, Shanghai 200433, China
| | - Xiaodong Tang
- Key Laboratory of Polar Materials and Devices (MOE), Department of Optoelectronics, East China Normal University, Shanghai 200241, China
| | - Junhao Chu
- Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Andrew M Rappe
- Department of Chemistry, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Cheng Gong
- Department of Electrical and Computer Engineering and Quantum Technology Center, University of Maryland, College Park, Maryland 20742, United States
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19
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Deterministic reversal of single magnetic vortex circulation by an electric field. Sci Bull (Beijing) 2020; 65:1260-1267. [PMID: 36747413 DOI: 10.1016/j.scib.2020.04.008] [Citation(s) in RCA: 14] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/07/2020] [Revised: 02/23/2020] [Accepted: 03/27/2020] [Indexed: 02/08/2023]
Abstract
The ability to control magnetic vortex is critical for their potential applications in spintronic devices. Traditional methods including magnetic field, spin-polarized current etc. have been used to flip the core and/or reverse circulation of vortex. However, it is challenging for deterministic electric-field control of the single magnetic vortex textures with time-reversal broken symmetry and no planar magnetic anisotropy. Here it is reported that a deterministic reversal of single magnetic vortex circulation can be driven back and forth by a space-varying strain in multiferroic heterostructures, which is controlled by using a bi-axial pulsed electric field. Phase-field simulation reveals the mechanism of the emerging magnetoelastic energy with the space variation and visualizes the reversal pathway of the vortex. This deterministic electric-field control of the single magnetic vortex textures demonstrates a new approach to integrate the low-dimensional spin texture into the magnetoelectric thin film devices with low energy consumption.
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20
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Ning S, Zhang Q, Occhialini C, Comin R, Zhong X, Ross CA. Voltage Control of Magnetism above Room Temperature in Epitaxial SrCo 1-xFe xO 3-δ. ACS NANO 2020; 14:8949-8957. [PMID: 32568512 DOI: 10.1021/acsnano.0c03750] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Searching for new materials and phenomena to enable voltage control of magnetism and magnetic properties holds compelling interest for the development of low-power nonvolatile memory devices. In particular, reversible and nonvolatile ON/OFF controls of magnetism above room temperature are highly desirable yet still elusive. Here, we report on a nonvolatile voltage control of magnetism in epitaxial SrCo1-xFexO3-δ (SCFO). The substitution of Co with Fe significantly changes the magnetic properties of SCFO. In particular, for the Co/Fe ratio of ∼1:1, a switch between nonmagnetic (OFF) and ferromagnetic (ON) states with a Curie temperature above room temperature is accomplished by ionic liquid gating at ambient conditions with voltages as low as ±2 V, even for films with thickness up to 150 nm. Tuning the oxygen stoichiometry via the polarity and duration of gating enables reversible and continuous control of the magnetization between 0 and 100 emu/cm3 (0.61 μB/f.u.) at room temperature. In addition, SCFO was successfully incorporated into self-assembled two-phase vertically aligned nanocomposites, in which the reversible voltage control of magnetism above room temperature is also attained. The notable structural response of SCFO to ionic liquid gating allows large strain couplings between the two oxides in these nanocomposites, with potential for voltage-controlled and strain-mediated functionality based on couplings between structure, composition, and physical properties.
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Affiliation(s)
- Shuai Ning
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Qiqi Zhang
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), the State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Connor Occhialini
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Riccardo Comin
- Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xiaoyan Zhong
- National Center for Electron Microscopy in Beijing, Key Laboratory of Advanced Materials (MOE), the State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China
- Shenzhen Research Institute, City University of Hong Kong,, Shenzhen 518057, People's Republic of China
| | - Caroline A Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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21
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Evans DM, Garcia V, Meier D, Bibes M. Domains and domain walls in multiferroics. PHYSICAL SCIENCES REVIEWS 2020. [DOI: 10.1515/psr-2019-0067] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
Abstract
AbstractMultiferroics are materials combining several ferroic orders, such as ferroelectricity, ferro- (or antiferro-) magnetism, ferroelasticity and ferrotoroidicity. They are of interest both from a fundamental perspective, as they have multiple (coupled) non-linear functional responses providing a veritable myriad of correlated phenomena, and because of the opportunity to apply these functionalities for new device applications. One application is, for instance, in non-volatile memory, which has led to special attention being devoted to ferroelectric and magnetic multiferroics. The vision is to combine the low writing power of ferroelectric information with the easy, non-volatile reading of magnetic information to give a “best of both worlds” computer memory. For this to be realised, the two ferroic orders need to be intimately linked via the magnetoelectric effect. The magnetoelectric coupling – the way polarization and magnetization interact – is manifested by the formation and interactions of domains and domain walls, and so to understand how to engineer future devices one must first understand the interactions of domains and domain walls. In this article, we provide a short introduction to the domain formation in ferroelectrics and ferromagnets, as well as different microscopy techniques that enable the visualization of such domains. We then review the recent research on multiferroic domains and domain walls, including their manipulation and intriguing properties, such as enhanced conductivity and anomalous magnetic order. Finally, we discuss future perspectives concerning the field of multiferroic domain walls and emergent topological structures such as ferroelectric vortices and skyrmions.
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Affiliation(s)
- Donald M. Evans
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Vincent Garcia
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology (NTNU), 7491 Trondheim, Norway
| | - Manuel Bibes
- CNRS, Thales, Université Paris-Saclay, Unité Mixte de Physique, 91767 Palaiseau, France
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22
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Wang N, Luo X, Han L, Zhang Z, Zhang R, Olin H, Yang Y. Structure, Performance, and Application of BiFeO 3 Nanomaterials. NANO-MICRO LETTERS 2020; 12:81. [PMID: 34138095 PMCID: PMC7770668 DOI: 10.1007/s40820-020-00420-6] [Citation(s) in RCA: 30] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2020] [Accepted: 02/28/2020] [Indexed: 05/27/2023]
Abstract
Multiferroic nanomaterials have attracted great interest due to simultaneous two or more properties such as ferroelectricity, ferromagnetism, and ferroelasticity, which can promise a broad application in multifunctional, low-power consumption, environmentally friendly devices. Bismuth ferrite (BiFeO3, BFO) exhibits both (anti)ferromagnetic and ferroelectric properties at room temperature. Thus, it has played an increasingly important role in multiferroic system. In this review, we systematically discussed the developments of BFO nanomaterials including morphology, structures, properties, and potential applications in multiferroic devices with novel functions. Even the opportunities and challenges were all analyzed and summarized. We hope this review can act as an updating and encourage more researchers to push on the development of BFO nanomaterials in the future.
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Affiliation(s)
- Nan Wang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xudong Luo
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Lu Han
- School of Materials and Metallurgy, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China.
| | - Zhiqiang Zhang
- School of Chemical Engineering, University of Science and Technology Liaoning, 185 Qianshan Zhong Road, Anshan, 114051, Liaoning, People's Republic of China
| | - Renyun Zhang
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Håkan Olin
- Department of Natural Sciences, Mid Sweden University, Holmgatan 10, 85170, Sundsvall, Sweden
| | - Ya Yang
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, People's Republic of China.
- School of Nanoscience and Technology, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
- Center on Nanoenergy Research, School of Physical Science and Technology, Guangxi University, Nanning, 530004, Guangxi, People's Republic of China.
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23
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Wang L, Hu Z, Zhu Y, Xian D, Cai J, Guan M, Wang C, Duan J, Wu J, Wang Z, Zhou Z, Jiang ZD, Zeng Z, Liu M. Electric Field-Tunable Giant Magnetoresistance (GMR) Sensor with Enhanced Linear Range. ACS APPLIED MATERIALS & INTERFACES 2020; 12:8855-8861. [PMID: 31984722 DOI: 10.1021/acsami.9b20038] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The operation mechanism of giant magnetoresistance (GMR) sensors relies on the linear response of the magnetization direction to an external magnetic field. Since the magnetic anisotropy of ferromagnetic layers can be manipulated by a strain-mediated magnetoelectric coupling effect, we propose a tunable GMR magnetic field sensor design that allows for voltage tuning of the linear range and sensitivity. A spin valve structure Ru/CoFe/Cu/CoFe/IrMn/Ru is grown on a PMN-PT (011) substrate, and the magnetization directions of ferromagnetic layers can be controlled by an electric field. An adjustable linear magnetoresistance is therefore induced. Based on the magnetoelectric coupling effect and spin valve, we prepared tunable GMR magnetic field sensors with bridge structures. The linear sensing range of a DC magnetic field is enhanced 6 times by applying an electric field of 14 kV/cm. The electrically tunable GMR sensor fulfills the requirements to work at different magnetic field ranges in the same configuration, therefore exhibiting great potential for applications in the Internet of things.
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Affiliation(s)
- Liqian Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Zhongqiang Hu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Yuanyuan Zhu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Dan Xian
- Collaborative Innovation Center of High-End Manufacturing Equipment , Xi'an Jiaotong University , Xi'an 710049 , China
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Jialin Cai
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems , Suzhou Institute of Nano-Tech and Nano-Bionics, CAS , Suzhou , Jiangsu 215123 , China
| | - Mengmeng Guan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Chenying Wang
- Collaborative Innovation Center of High-End Manufacturing Equipment , Xi'an Jiaotong University , Xi'an 710049 , China
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Junbao Duan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Jingen Wu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Zhiguang Wang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Zhuang-De Jiang
- Collaborative Innovation Center of High-End Manufacturing Equipment , Xi'an Jiaotong University , Xi'an 710049 , China
- International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology , Xi'an Jiaotong University , Xi'an 710049 , China
| | - Zhongming Zeng
- Key Laboratory of Multifunctional Nanomaterials and Smart Systems , Suzhou Institute of Nano-Tech and Nano-Bionics, CAS , Suzhou , Jiangsu 215123 , China
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials , Xi'an Jiaotong University , Xi'an 710049 , China
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24
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Yin L, Mi W. Progress in BiFeO 3-based heterostructures: materials, properties and applications. NANOSCALE 2020; 12:477-523. [PMID: 31850428 DOI: 10.1039/c9nr08800h] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
BiFeO3-based heterostructures have attracted much attention for potential applications due to their room-temperature multiferroic properties, proper band gaps and ultrahigh ferroelectric polarization of BiFeO3, such as data storage, optical utilization in visible light regions and synapse-like function. Here, this work aims to offer a systematic review on the progress of BiFeO3-based heterostructures. In the first part, the optical, electric, magnetic, and valley properties and their interactions in BiFeO3-based heterostructures are briefly reviewed. In the second part, the morphologies of BiFeO3 and medium materials in the heterostructures are discussed. Particularly, in the third part, the physical properties and underlying mechanism in BiFeO3-based heterostructures are discussed thoroughly, such as the photovoltaic effect, electric field control of magnetism, resistance switching, and two-dimensional electron gas and valley characteristics. The fourth part illustrates the applications of BiFeO3-based heterostructures based on the materials and physical properties discussed in the second and third parts. This review also includes a future prospect, which can provide guidance for exploring novel physical properties and designing multifunctional devices.
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Affiliation(s)
- Li Yin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
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25
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Zhang Y, Zhang Y, Guo Q, Zhang D, Zheng S, Feng M, Zhong X, Tan C, Lu Z, Wang J, Hou P, Zhou Y, Yuan J. Enhanced electromagnon excitations in Nd-doped BiFeO 3 nanoparticles near morphotropic phase boundaries. Phys Chem Chem Phys 2019; 21:21381-21388. [PMID: 31531469 DOI: 10.1039/c9cp04194j] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
In multiferroics, electromagnons have been recognized as a noticeable topic due to their indispensable role in magnetoelectric, magnetodielectric, and magnetocapacitance effects. Here, the electromagnons of Bi1-xNdxFeO3 (x = 0-0.2) nanoparticles are studied via terahertz time-domain spectroscopy, and the impacts of doping concentrations on electromagnons have been discussed. We found that the electromagnons in Bi1-xNdxFeO3 nanoparticles are associated with their phase transition. The total coupling weight of electromagnons is gradually increased in polar R3c structures and then reduces in the antipolar Pbam phase, and the weight in the antipolar phase is less than that of the pure R3c phase. Interestingly, a colossal electromagnon is observed at polar-antipolar and antiferromagnetic-ferromagnetic phase boundaries. Our work offers an avenue for designing and choosing materials with better magnetodielectric and magnetocapacitance properties.
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Affiliation(s)
- Yuan Zhang
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Yi Zhang
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Quan Guo
- Department of Physics, College of Science, National University of Defense Technology, Hunan 410073, China.
| | - Dongwen Zhang
- Department of Physics, College of Science, National University of Defense Technology, Hunan 410073, China.
| | - Shuaizhi Zheng
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Ming Feng
- Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University, Changchun 130103, China
| | - Xiangli Zhong
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Congbing Tan
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Zhihui Lu
- Department of Physics, College of Science, National University of Defense Technology, Hunan 410073, China.
| | - Jinbin Wang
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Pengfei Hou
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Yichun Zhou
- School of Materials Science and Engineering, Xiangtan University, Hunan 411105, China.
| | - Jianmin Yuan
- Department of Physics, College of Science, National University of Defense Technology, Hunan 410073, China.
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26
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Knoche DS, Yun Y, Ramakrishnegowda N, Mühlenbein L, Li X, Bhatnagar A. Domain and Switching Control of the Bulk Photovoltaic Effect in Epitaxial BiFeO 3 Thin Films. Sci Rep 2019; 9:13979. [PMID: 31562342 PMCID: PMC6765050 DOI: 10.1038/s41598-019-50185-1] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2019] [Accepted: 09/06/2019] [Indexed: 11/09/2022] Open
Abstract
Absence of inversion symmetry is the underlying origin of ferroelectricity, piezoelectricity, and the bulk photovoltaic (BPV) effect, as a result of which they are inextricably linked. However, till now, only the piezoelectric effects (inverse) have been commonly utilized for probing ferroelectric characteristics such as domain arrangements and resultant polarization orientation. The bulk photovoltaic effect, despite sharing same relation with the symmetry as piezoelectricity, has been mostly perceived as an outcome of ferroelectricity and not as a possible analytical method. In this work, we investigate the development of BPV characteristics, i.e. amplitude and angular dependency of short-circuit current, as the ferroelastic domain arrangement is varied by applying electric fields in planar devices of BiFeO3 films. A rather sensitive co-dependency was observed from measurements on sample with ordered and disordered domain arrangements. Analysis of the photovoltaic response manifested in a mathematical model to estimate the proportion of switched and un-switched regions. The results unravel the potential utility of BPV effect to trace the orientation of the polarization vectors (direction and amplitude) in areas much larger than that can be accommodated in probe-based techniques.
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Affiliation(s)
- David S Knoche
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany
| | - Yeseul Yun
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany
| | - Niranjan Ramakrishnegowda
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany
| | - Lutz Mühlenbein
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany
| | - Xinye Li
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany
| | - Akash Bhatnagar
- Zentrum für Innovationskompetenz SiLi-nano, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale), 06120, Germany.
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27
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Strkalj N, Gradauskaite E, Nordlander J, Trassin M. Design and Manipulation of Ferroic Domains in Complex Oxide Heterostructures. MATERIALS (BASEL, SWITZERLAND) 2019; 12:E3108. [PMID: 31554210 PMCID: PMC6803956 DOI: 10.3390/ma12193108] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2019] [Revised: 09/16/2019] [Accepted: 09/18/2019] [Indexed: 02/06/2023]
Abstract
The current burst of device concepts based on nanoscale domain-control in magnetically and electrically ordered systems motivates us to review the recent development in the design of domain engineered oxide heterostructures. The improved ability to design and control advanced ferroic domain architectures came hand in hand with major advances in investigation capacity of nanoscale ferroic states. The new avenues offered by prototypical multiferroic materials, in which electric and magnetic orders coexist, are expanding beyond the canonical low-energy-consuming electrical control of a net magnetization. Domain pattern inversion, for instance, holds promises of increased functionalities. In this review, we first describe the recent development in the creation of controlled ferroelectric and multiferroic domain architectures in thin films and multilayers. We then present techniques for probing the domain state with a particular focus on non-invasive tools allowing the determination of buried ferroic states. Finally, we discuss the switching events and their domain analysis, providing critical insight into the evolution of device concepts involving multiferroic thin films and heterostructures.
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Affiliation(s)
- Nives Strkalj
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
| | - Elzbieta Gradauskaite
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Johanna Nordlander
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zurich, Switzerland.
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28
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Chang SJ, Chung MH, Kao MY, Lee SF, Yu YH, Kaun CC, Nakamura T, Sasabe N, Chu SJ, Tseng YC. GdFe 0.8Ni 0.2O 3: A Multiferroic Material for Low-Power Spintronic Devices with High Storage Capacity. ACS APPLIED MATERIALS & INTERFACES 2019; 11:31562-31572. [PMID: 31373787 DOI: 10.1021/acsami.9b11767] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Multiferroic materials are strong candidates for reducing the energy consumption of voltage-controlled spintronic devices because of the coexistence of ferroelectric (FE) and magnetic orders in a single phase. In this article, we present a new multiferroic perovskite, GdNixFe1-xO3 (GFNO), produced via sputtering on a SrTiO3 substrate. The proposed GFNO is FE and canted antiferromagnetic (AFM) within a monoclinic framework at room temperature. The FE polarization of the GFNO is up to 37 μC/cm2. When capped with a Co layer, the resulting heterostructure exhibits voltage-controlled magnetism (VCM). The heterostructured device exhibits two distinct features. First, its VCM depends on the magnitude as well as the polarity of the applied bias, thereby doubling the number of available magnetic readout states under a fixed voltage. Furthermore, the magnetic order of the device can be controlled very effectively within ±1 V. These two characteristics satisfy the requirements for low-power and high-storage technology. Theoretical analysis and experimental results indicate the importance of Ni dopant in regulating the polarity-dependent multiferroicity of this gadolinium ferrite system.
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Affiliation(s)
| | | | | | | | | | | | - Tetsuya Nakamura
- Japan Synchrotron Radiation Research Institute (JASRI) , 1-1-1 Kouto , Sayo , Hyogo 679-5198 , Japan
| | - Norimasa Sasabe
- Japan Synchrotron Radiation Research Institute (JASRI) , 1-1-1 Kouto , Sayo , Hyogo 679-5198 , Japan
| | - Shang-Jui Chu
- National Synchrotron Radiation Research Center , Hsinchu 30076 , Taiwan
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29
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Mehmood N, Song X, Tian G, Hou Z, Chen D, Fan Z, Qin M, Gao X, Liu JM. Electric field driven multi-state magnetization switching in triangular nanomagnets on piezoelectric substrate. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2019; 31:295802. [PMID: 30978710 DOI: 10.1088/1361-648x/ab18f0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Electric field control of magnetic state switching mediated by magneto-elastic coupling in multiferroic heterostructures consisting of shape anisotropic magnetostrictive nanomagnets elastically coupled with a piezoelectric substrate has a promising potential for next generation magneto-elastic memory and logic devices. In this work, by using micromagnetic simulation, we showed that localized strain-induced magnetic anisotropy caused by the electric field-induced piezostrain combined with strong multifold shape anisotropy effect can be used for achieving a multistate switching of magnetization in a triangular soft magnetic nano-island on a piezoelectric substrate. A piezostrain-induced uniaxial magnetic anisotropy pulse applied in specific directions switches the magnetization within the triangular nanomagnet by an angle of 60° from the initial state. The relation between critical magnitude of the strain pulse for the switching of the magnetization states and geometric parameters (thickness and lateral size) within the triangular nanomagnets has been worked out. Complete cycles of clockwise as well as counter-clockwise switching of the magnetization states of the triangular nanomagnet have been achieved by a series of sequential switching with different directions of applied strain-induced magnetic anisotropy. This local gating scheme-based multistate switching can be used for electric field-induced ultra-fast, deterministic and reversible magnetization switching which are the key challenges in designing of the magnetoelastic and/or magnetoelectric memory and logic devices.
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Affiliation(s)
- Nasir Mehmood
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People's Republic of China
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30
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Tian G, Yang W, Chen D, Fan Z, Hou Z, Alexe M, Gao X. Topological domain states and magnetoelectric properties in multiferroic nanostructures. Natl Sci Rev 2019; 6:684-702. [PMID: 34691923 PMCID: PMC8291546 DOI: 10.1093/nsr/nwz100] [Citation(s) in RCA: 25] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/06/2019] [Revised: 07/07/2019] [Accepted: 07/12/2019] [Indexed: 11/21/2022] Open
Abstract
Multiferroic nanostructures have been attracting tremendous attention over the past decade, due to their rich cross-coupling effects and prospective electronic applications. In particular, the emergence of some exotic phenomena in size-confined multiferroic systems, including topological domain states such as vortices, center domains, and skyrmion bubble domains, has opened a new avenue to a number of intriguing physical properties and functionalities, and thus underpins a wide range of applications in future nanoelectronic devices. It is also highly appreciated that nano-domain engineering provides a pathway to control the magnetoelectric properties, which is promising for future energy-efficient spintronic devices. In recent years, this field, still in its infancy, has witnessed a rapid development and a number of challenges too. In this article, we shall review the recent advances in the emergent domain-related exotic phenomena in multiferroic nanostructures. Specific attention is paid to the topological domain structures and related novel physical behaviors as well as the electric-field-driven magnetic switching via domain engineering. This review will end with a discussion of future challenges and potential directions.
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Affiliation(s)
- Guo Tian
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Wenda Yang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Deyang Chen
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhen Fan
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
| | - Marin Alexe
- Department of Physics, University of Warwick, Coventry CV4 7AL, UK
| | - Xingsen Gao
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, and Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, China
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31
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Sun X, Mo X, Liu L, Sun H, Pan C. Voltage-Driven Room-Temperature Resistance and Magnetization Switching in Ceramic TiO 2/PAA Nanoporous Composite Films. ACS APPLIED MATERIALS & INTERFACES 2019; 11:21661-21667. [PMID: 31136140 DOI: 10.1021/acsami.9b02593] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Voltage control of room-temperature ferromagnetism has remained a big challenge which will greatly influence the multifunctional memory devices. In this paper, porous TiO2 thin films were deposited by dc-reactive magnetron sputtering onto ordered porous anodic alumina (PAA) substrates. Voltage-driving room-temperature resistance and magnetization switching without external magnetic field are simultaneously found in an Ag/TiO2/PAA/Al (Ag/TP/Al) device. Further analysis indicates that the formation/rupture of oxygen vacancy defect-based conductive filaments would be responsible for the changes of resistivity and magnetization. Our present results suggest that the TP nanoporous composite film material may therefore be used to achieve voltage control of magnetism and resistance switching in the future multifunctional memory devices. The Ag/TP/Al devices can also be used for new spintronic devices, neuromorphic operations, and alternative logic circuits and computing.
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Affiliation(s)
- Xidi Sun
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
| | - Xiaoming Mo
- Center on Nanoenergy Research, College of Physical Science and Technology , Guangxi University , Nanning 530004 , Guangxi , PR China
| | - Lihu Liu
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Huiyuan Sun
- College of Physics Science & Information Engineering and Hebei Advanced Thin Film Laboratory , Hebei Normal University , Shijiazhuang , Hebei 050024 , China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-Nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems , Chinese Academy of Sciences , Beijing 100083 , PR China
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32
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Gibertini M, Koperski M, Morpurgo AF, Novoselov KS. Magnetic 2D materials and heterostructures. NATURE NANOTECHNOLOGY 2019; 14:408-419. [PMID: 31065072 DOI: 10.1038/s41565-019-0438-6] [Citation(s) in RCA: 414] [Impact Index Per Article: 82.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2018] [Accepted: 03/28/2019] [Indexed: 05/22/2023]
Abstract
The family of two-dimensional (2D) materials grows day by day, hugely expanding the scope of possible phenomena to be explored in two dimensions, as well as the possible van der Waals (vdW) heterostructures that one can create. Such 2D materials currently cover a vast range of properties. Until recently, this family has been missing one crucial member: 2D magnets. The situation has changed over the past 2 years with the introduction of a variety of atomically thin magnetic crystals. Here we will discuss the difference between magnetic states in 2D materials and in bulk crystals and present an overview of the 2D magnets that have been explored recently. We will focus on the case of the two most studied systems-semiconducting CrI3 and metallic Fe3GeTe2-and illustrate the physical phenomena that have been observed. Special attention will be given to the range of new van der Waals heterostructures that became possible with the appearance of 2D magnets, offering new perspectives in this rapidly expanding field.
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Affiliation(s)
- M Gibertini
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials (MARVEL), École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - M Koperski
- School of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - A F Morpurgo
- Department of Quantum Matter Physics, University of Geneva, Geneva, Switzerland
- Group of Applied Physics, University of Geneva, Geneva, Switzerland
| | - K S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
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Frey NC, Bandyopadhyay A, Kumar H, Anasori B, Gogotsi Y, Shenoy VB. Surface-Engineered MXenes: Electric Field Control of Magnetism and Enhanced Magnetic Anisotropy. ACS NANO 2019; 13:2831-2839. [PMID: 30653916 DOI: 10.1021/acsnano.8b09201] [Citation(s) in RCA: 52] [Impact Index Per Article: 10.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Controlling magnetism in two-dimensional (2D) materials via electric fields and doping enables robust long-range order by providing an external mechanism to modulate magnetic exchange interactions and anisotropy. In this report, we predict that transition metal carbide and nitride MXenes are promising candidates for controllable magnetic 2D materials. The surface terminations introduced during synthesis act as chemical dopants that influence the electronic structure, enabling controllable magnetic order. We show ground-state magnetic ordering in Janus M2XO xF2- x (M is an early transition metal, X is carbon or nitrogen, and x = 0.5, 1, or 1.5) with asymmetric surface functionalization, where local structural and chemical disorder induces magnetic ordering in some systems that are nonmagnetic or weakly magnetic in their pristine form. The resulting magnetic states of these noncentrosymmetric structures can be robustly switched and stabilized by tuning the interlayer exchange couplings with small applied electric fields. Furthermore, bond directionality is enhanced by Janus functionalization, resulting in improved magnetic anisotropy, which is essential to stable 2D magnetic ordering. The mixed termination-induced anisotropy leads to robust Ising ferromagnetism with an out-of-plane easy axis over the full range of relevant termination compositions for Janus Mn2N. Janus Cr2C, V2C, and Ti2C were found to be robustly antiferromagnetic. Our results provide a strategy for exploiting asymmetric surface functionalization to achieve room-temperature nanoscale magnetism under ambient conditions in MXenes with currently available synthesis techniques.
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Affiliation(s)
- Nathan C Frey
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Arkamita Bandyopadhyay
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Hemant Kumar
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
| | - Babak Anasori
- Department of Materials Science and Engineering, and A.J. Drexel Nanomaterials Institute , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Yury Gogotsi
- Department of Materials Science and Engineering, and A.J. Drexel Nanomaterials Institute , Drexel University , Philadelphia , Pennsylvania 19104 , United States
| | - Vivek B Shenoy
- Department of Materials Science and Engineering , University of Pennsylvania , Philadelphia , Pennsylvania 19104 , United States
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Thickness scaling of ferroelectricity in BiFeO 3 by tomographic atomic force microscopy. Proc Natl Acad Sci U S A 2019; 116:2413-2418. [PMID: 30683718 PMCID: PMC6377454 DOI: 10.1073/pnas.1806074116] [Citation(s) in RCA: 20] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022] Open
Abstract
Intrinsic and extrinsic properties of ferroelectric materials are known to have strong dependencies on electrical and mechanical boundary conditions, resulting in finite size effects at length scales below several hundred nanometers. In ferroelectric thin films, equilibrium domain size is proportional to the square root of film thickness, which precludes the use of present tomographic microscopies to accurately resolve complex domain morphologies in submicrometer films. We report a subtractive experimental technique with volumetric resolution below 315 nm3, that allows for three-dimensional, tomographic imaging of materials properties using only an atomic force microscope. Multiferroic BiFeO3 was chosen as a model system for illustrating the capabilities of tomographic atomic force microscopy due to its technological relevance in low-power, electrically switchable magnetic logic. Nanometer-scale 3D imaging of materials properties is critical for understanding equilibrium states in electronic materials, as well as for optimization of device performance and reliability, even though such capabilities remain a substantial experimental challenge. Tomographic atomic force microscopy (TAFM) is presented as a subtractive scanning probe technique for high-resolution, 3D ferroelectric property measurements. Volumetric property resolution below 315 nm3, as well as unit-cell-scale vertical material removal, are demonstrated. Specifically, TAFM is applied to investigate the size dependence of ferroelectricity in the room-temperature multiferroic BiFeO3 across two decades of thickness to below 1 nm. TAFM enables volumetric imaging of ferroelectric domains in BiFeO3 with a significant improvement in spatial resolution compared with existing domain tomography techniques. We additionally employ TAFM for direct, thickness-dependent measurements of the local spontaneous polarization and ferroelectric coercive field in BiFeO3. The thickness-resolved ferroelectric properties strongly correlate with cross-sectional transmission electron microscopy (TEM), Landau–Ginzburg–Devonshire phenomenological theory, and the semiempirical Kay–Dunn scaling law for ferroelectric coercive fields. These results provide an unambiguous determination of a stable and switchable polar state in BiFeO3 to thicknesses below 5 nm. The accuracy and utility of these findings on finite size effects in ferroelectric and multiferroic materials more broadly exemplifies the potential for novel insight into nanoscale 3D property measurements via other variations of TAFM.
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D'Souza N, Biswas A, Ahmad H, Fashami MS, Al-Rashid MM, Sampath V, Bhattacharya D, Abeed MA, Atulasimha J, Bandyopadhyay S. Energy-efficient switching of nanomagnets for computing: straintronics and other methodologies. NANOTECHNOLOGY 2018; 29:442001. [PMID: 30052200 DOI: 10.1088/1361-6528/aad65d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate 'switches' that dissipate miniscule amounts of energy when they switch and provide additional functionality that are beneficial for information processing. An interesting idea that has emerged recently is the notion of using two-phase (piezoelectric/magnetostrictive) multiferroic nanomagnets with bistable (or multi-stable) magnetization states to encode digital information (bits), and switching the magnetization between these states with small voltages (that strain the nanomagnets) to carry out digital information processing. The switching delay is ∼1 ns and the energy dissipated in the switching operation can be few to tens of aJ, which is comparable to, or smaller than, the energy dissipated in switching a modern-day transistor. Unlike a transistor, a nanomagnet is 'non-volatile', so a nanomagnetic processing unit can store the result of a computation locally without refresh cycles, thereby allowing it to double as both logic and memory. These dual-role elements promise new, robust, energy-efficient, high-speed computing and signal processing architectures (usually non-Boolean and often non-von-Neumann) that can be more powerful, architecturally superior (fewer circuit elements needed to implement a given function) and sometimes faster than their traditional transistor-based counterparts. This topical review covers the important advances in computing and information processing with nanomagnets, with emphasis on strain-switched multiferroic nanomagnets acting as non-volatile and energy-efficient switches-a field known as 'straintronics'. It also outlines key challenges in straintronics.
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Affiliation(s)
- Noel D'Souza
- Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond VA 23284, United States of America
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Manipatruni S, Nikonov DE, Lin CC, Prasad B, Huang YL, Damodaran AR, Chen Z, Ramesh R, Young IA. Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system. SCIENCE ADVANCES 2018; 4:eaat4229. [PMID: 30480090 PMCID: PMC6251722 DOI: 10.1126/sciadv.aat4229] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/25/2018] [Accepted: 10/25/2018] [Indexed: 05/12/2023]
Abstract
Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO3 (BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co0.9Fe0.1 or La0.7Sr0.3MnO3. Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements.
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Affiliation(s)
| | | | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, OR 97124, USA
| | - Bhagwati Prasad
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Yen-Lin Huang
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Anoop R. Damodaran
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Zuhuang Chen
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering and Department of Physics, University of California, Berkeley, CA 94720, USA
| | - Ian A. Young
- Components Research, Intel Corp., Hillsboro, OR 97124, USA
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Yao J, Song X, Gao X, Tian G, Li P, Fan H, Huang Z, Yang W, Chen D, Fan Z, Zeng M, Liu JM. Electrically Driven Reversible Magnetic Rotation in Nanoscale Multiferroic Heterostructures. ACS NANO 2018; 12:6767-6776. [PMID: 29957931 DOI: 10.1021/acsnano.8b01936] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Electrically driven magnetic switching (EDMS) is highly demanded for next-generation advanced memories or spintronic devices. The key challenge is to achieve repeatable and reversible EDMS at sufficiently small scale. In this work, we reported an experimental realization of room-temperature, electrically driven, reversible, and robust 120° magnetic state rotation in nanoscale multiferroic heterostructures consisting of a triangular Co nanomagnet array on tetragonal BiFeO3 films, which can be directly monitored by magnetic force microscope (MFM) imaging. The observed reversible magnetic switching in an individual nanomagnet can be triggered by a small electric pulse within 10 V with an ultrashort time of ∼10 ns, which also demonstrates sufficient switching cycling and months-long retention lifetime. A mechanism based on synergic effects of interfacial strain and exchange coupling plus shape anisotropy was also proposed, which was also verified by micromagnetic simulations. Our results create an avenue to engineer the nanoscale EDMS for low-power-consumption, high-density, nonvolatile magnetoelectric memories and beyond.
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Affiliation(s)
- Junxiang Yao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Xiao Song
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Xingsen Gao
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Guo Tian
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Peilian Li
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Hua Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Zhifeng Huang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Wenda Yang
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Deyang Chen
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Zhen Fan
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Min Zeng
- Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics , South China Normal University , Guangzhou 510006 , China
| | - Jun-Ming Liu
- Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures , Nanjing University , Nanjing 21009 , China
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Wei L, Hu Z, Du G, Yuan Y, Wang J, Tu H, You B, Zhou S, Qu J, Liu H, Zheng R, Hu Y, Du J. Full Electric Control of Exchange Bias at Room Temperature by Resistive Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801885. [PMID: 29892982 DOI: 10.1002/adma.201801885] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2018] [Revised: 04/30/2018] [Indexed: 05/14/2023]
Abstract
Electric control of exchange bias (EB) is of vital importance in energy-efficient spintronics. Although many attempts have been made during the past decade, each has its own limitations for operation and thus falls short of full direct and reversible electrical control of EB at room temperature. Here, a novel approach is proposed by virtue of unipolar resistive switching to accomplish this task in a Si/SiO2 /Pt/Co/NiO/Pt device. By applying certain voltages, the device displays obvious EB in the high-resistance-state while negligible EB in the low-resistance state. Conductive filaments forming in the NiO layer and rupturing near the Co-NiO interface are considered to play dominant roles in determining the combined resistive switching and EB phenomena. This work paves a new way for designing multifunctional and nonvolatile magnetoelectric random access memory devices.
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Affiliation(s)
- Lujun Wei
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Zhenzhong Hu
- College of Telecommunication and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, P. R. China
| | - Guanxiang Du
- College of Telecommunication and Information Engineering, Nanjing University of Posts and Telecommunications, Nanjing, 210003, P. R. China
| | - Yuan Yuan
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Ji Wang
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Hongqing Tu
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
| | - Biao You
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China
| | - Shiming Zhou
- Department of Physics, Tongji University, Shanghai, 200092, P. R. China
| | - Jiangtao Qu
- School of Physics and the Australian Institute for Nanoscale Science and Technology, The University of Sydney, NSW, 2006, Australia
| | - Hongwei Liu
- The Australian Centre for Microscopy and Microanalysis, The University of Sydney, NSW, 2006, Australia
| | - Rongkun Zheng
- School of Physics and the Australian Institute for Nanoscale Science and Technology, The University of Sydney, NSW, 2006, Australia
| | - Yong Hu
- College of Sciences, Northeastern University, Shenyang, 110819, P. R. China
| | - Jun Du
- National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing, 210093, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, P. R. China
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Jiang S, Li L, Wang Z, Mak KF, Shan J. Controlling magnetism in 2D CrI 3 by electrostatic doping. NATURE NANOTECHNOLOGY 2018; 13:549-553. [PMID: 29736035 DOI: 10.1038/s41565-018-0135-x] [Citation(s) in RCA: 325] [Impact Index Per Article: 54.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/11/2018] [Accepted: 04/03/2018] [Indexed: 05/22/2023]
Abstract
The atomic thickness of two-dimensional materials provides a unique opportunity to control their electrical1 and optical2 properties as well as to drive the electronic phase transitions3 by electrostatic doping. The discovery of two-dimensional magnetic materials4-10 has opened up the prospect of the electrical control of magnetism and the realization of new functional devices11. A recent experiment based on the linear magneto-electric effect has demonstrated control of the magnetic order in bilayer CrI3 by electric fields12. However, this approach is limited to non-centrosymmetric materials11,13-16 magnetically biased near the antiferromagnet-ferromagnet transition. Here, we demonstrate control of the magnetic properties of both monolayer and bilayer CrI3 by electrostatic doping using CrI3-graphene vertical heterostructures. In monolayer CrI3, doping significantly modifies the saturation magnetization, coercive force and Curie temperature, showing strengthened/weakened magnetic order with hole/electron doping. Remarkably, in bilayer CrI3, the electron doping above ~2.5 × 1013 cm-2 induces a transition from an antiferromagnetic to a ferromagnetic ground state in the absence of a magnetic field. The result reveals a strongly doping-dependent interlayer exchange coupling, which enables robust switching of magnetization in bilayer CrI3 by small gate voltages.
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Affiliation(s)
- Shengwei Jiang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA
| | - Lizhong Li
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
| | - Zefang Wang
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA
- Department of Physics, Penn State University, University Park, PA, USA
| | - Kin Fai Mak
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
| | - Jie Shan
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY, USA.
- Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, NY, USA.
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY, USA.
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Hojo H, Oka K, Shimizu K, Yamamoto H, Kawabe R, Azuma M. Development of Bismuth Ferrite as a Piezoelectric and Multiferroic Material by Cobalt Substitution. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1705665. [PMID: 29920786 DOI: 10.1002/adma.201705665] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2017] [Revised: 03/06/2018] [Indexed: 06/08/2023]
Abstract
Bismuth ferrite (BiFeO3 ) is the most widely studied multiferroic material with robust ferroelectricity and antiferromagnetic ordering at room temperature. One of the possible device applications of this material is one that utilizes the ferroelectric/piezoelectric property itself such as ferroelectric memory components, actuators, and so on. Other applications are more challenging and make full use of its multiferroic property to realize novel spintronics and magnetic memory devices, which can be addressed electrically as well as magnetically. This progress report summarizes the recent attempt to control the piezoelectric and magnetic properties of BiFeO3 by cobalt substitution.
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Affiliation(s)
- Hajime Hojo
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Kengo Oka
- Department of Applied Chemistry, Faculty of Science and Engineering, Chuo University, Tokyo, 112-8551, Japan
| | - Keisuke Shimizu
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Hajime Yamamoto
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Ryo Kawabe
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
| | - Masaki Azuma
- Laboratory for Materials and Structures, Tokyo Institute of Technology, Yokohama, 226-8503, Japan
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Boldrin D, Mihai AP, Zou B, Zemen J, Thompson R, Ware E, Neamtu BV, Ghivelder L, Esser B, McComb DW, Petrov P, Cohen LF. Giant Piezomagnetism in Mn 3NiN. ACS APPLIED MATERIALS & INTERFACES 2018; 10:18863-18868. [PMID: 29726252 DOI: 10.1021/acsami.8b03112] [Citation(s) in RCA: 13] [Impact Index Per Article: 2.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Controlling magnetism with electric field directly or through strain-driven piezoelectric coupling remains a key goal of spintronics. Here, we demonstrate that giant piezomagnetism, a linear magneto-mechanic coupling effect, is manifest in antiperovskite Mn3NiN, facilitated by its geometrically frustrated antiferromagnetism opening the possibility of new memory device concepts. Films of Mn3NiN with intrinsic biaxial strains of ±0.25% result in Néel transition shifts up to 60 K and magnetization changes consistent with theory. Films grown on BaTiO3 display a striking magnetization jump in response to uniaxial strain from the intrinsic BaTiO3 structural transition, with an inferred 44% strain coupling efficiency and a magnetoelectric coefficient α (where α = d B/d E) of 0.018 G cm/V. The latter agrees with the 1000-fold increase over Cr2O3 predicted by theory. Overall, our observations pave the way for further research into the broader family of Mn-based antiperovskites where yet larger piezomagnetic effects are predicted to occur at room temperature.
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Affiliation(s)
- David Boldrin
- Department of Physics, Blackett Laboratory , Imperial College London , London SW7 2AZ , U.K
| | - Andrei P Mihai
- Department of Materials , Imperial College London , London SW7 2BP , U.K
| | - Bin Zou
- Department of Materials , Imperial College London , London SW7 2BP , U.K
| | - Jan Zemen
- Department of Materials , Imperial College London , London SW7 2BP , U.K
- Faculty of Electrical Engineering , Czech Technical University in Prague , Technická 2 , Prague 166 27 , Czech Republic
| | - Ryan Thompson
- Department of Physics, Blackett Laboratory , Imperial College London , London SW7 2AZ , U.K
| | - Ecaterina Ware
- Department of Materials , Imperial College London , London SW7 2BP , U.K
| | - Bogdan V Neamtu
- Material Science and Technology Department , Technical University of Cluj-Napoca , 103-105 Muncii , Cluj-Napoca 400020 , Romania
| | - Luis Ghivelder
- Instituto de Fisica , Universidade Federal do Rio de Janeiro , 21941-972 Rio de Janeiro , Rio de Janeiro , Brazil
| | - Bryan Esser
- Center for Electron Microscopy and Analysis , 1305 Kinnear Road , Columbus , Ohio 43212 , United States
| | - David W McComb
- Center for Electron Microscopy and Analysis , 1305 Kinnear Road , Columbus , Ohio 43212 , United States
| | - Peter Petrov
- Department of Materials , Imperial College London , London SW7 2BP , U.K
| | - Lesley F Cohen
- Department of Materials , Imperial College London , London SW7 2BP , U.K
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42
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Probing Ferroic States in Oxide Thin Films Using Optical Second Harmonic Generation. APPLIED SCIENCES-BASEL 2018. [DOI: 10.3390/app8040570] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
Forthcoming low-energy consumption oxide electronics rely on the deterministic control of ferroelectric and multiferroic domain states at the nanoscale. In this review, we address the recent progress in the field of investigation of ferroic order in thin films and heterostructures, with a focus on non-invasive optical second harmonic generation (SHG). For more than 50 years, SHG has served as an established technique for probing ferroic order in bulk materials. Here, we will survey the specific new aspects introduced to SHG investigation of ferroelectrics and multiferroics by working with thin film structures. We show how SHG can probe complex ferroic domain patterns non-invasively and even if the lateral domain size is below the optical resolution limit or buried beneath an otherwise impenetrable cap layer. We emphasize the potential of SHG to distinguish contributions from individual (multi-) ferroic films or interfaces buried in a device or multilayer architecture. Special attention is given to monitoring switching events in buried ferroic domain- and domain-wall distributions by SHG, thus opening new avenues towards the determination of the domain dynamics. Another aspect studied by SHG is the role of strain. We will finally show that by integrating SHG into the ongoing thin film deposition process, we can monitor the emergence of ferroic order and properties in situ, while they emerge during growth. Our review closes with an outlook, emphasizing the present underrepresentation of ferroic switching dynamics in the study of ferroic oxide heterostructures.
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Huang C, Du Y, Wu H, Xiang H, Deng K, Kan E. Prediction of Intrinsic Ferromagnetic Ferroelectricity in a Transition-Metal Halide Monolayer. PHYSICAL REVIEW LETTERS 2018; 120:147601. [PMID: 29694145 DOI: 10.1103/physrevlett.120.147601] [Citation(s) in RCA: 81] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/07/2017] [Revised: 09/25/2017] [Indexed: 06/08/2023]
Abstract
The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multistate data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition-metal halide systems. On the basis of first-principles calculations, we reveal that a charged CrBr_{3} monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr─Br_{6} units. As an example, we further show that (CrBr_{3})_{2}Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system not only are useful for fundamental research in multiferroics but also enable a wide range of applications in nanodevices.
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Affiliation(s)
- Chengxi Huang
- Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
- Key Laboratory of Soft Chemistry and Functional Materials (Ministry of Education), Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Yongping Du
- Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Haiping Wu
- Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Hongjun Xiang
- Key Laboratory of Computational Physical Sciences (Ministry of Education), State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai 200433, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, People's Republic of China
| | - Kaiming Deng
- Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
| | - Erjun Kan
- Department of Applied Physics and Institution of Energy and Microstructure, Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
- Key Laboratory of Soft Chemistry and Functional Materials (Ministry of Education), Nanjing University of Science and Technology, Nanjing, Jiangsu 210094, People's Republic of China
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Pang X, Jin C, Gao G, Li D, Zheng D, Bai H. Charge-assisted non-volatile magnetoelectric effects in NiFe2O4/PMN-PT heterostructures. Phys Chem Chem Phys 2018; 20:23079-23084. [DOI: 10.1039/c8cp03900c] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
The NFO/Pt/PMN-PT heterostructure can suppress the depolarization field, which enhances the polarization-dependent charge effect.
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Affiliation(s)
- Xin Pang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
| | - Chao Jin
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
| | - Guoqin Gao
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
| | - Dong Li
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
| | - Dongxing Zheng
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology
- Faculty of Science
- Tianjin University
- Tianjin 300350
- P. R. China
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45
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Wang F, Zhou C, Gesang D, Jiang C. Electric field control of magnetization reorientation in Co/Pb (Mg 1/3Nb 2/3)-PbTiO 3 heterostructure. NANOSCALE RESEARCH LETTERS 2017; 12:104. [PMID: 28209024 PMCID: PMC5307426 DOI: 10.1186/s11671-017-1866-6] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/17/2016] [Accepted: 01/25/2017] [Indexed: 06/06/2023]
Abstract
Herein, we demonstrated an apparent electric field control of magnetization reorientation at room temperature, through a strain-mediated magnetoelectric coupling in ferromagnetic/ferroelectric (FM/FE) multiferroic heterostructure. As the applied electric field increased, the magnetization tended to deviate from the original direction, which was induced by nonlinear strain vs electric-field behavior from the ferroelectric substrates. Ferromagnetic resonance showed that the in-plane magnetic easy axis of the Co film was shifted sharply with electric field E = 10 kV/cm, which indicates that the in-plane uniaxial magnetic anisotropy of the Co film can be inverted via the application of an electric field. These results demonstrated that converse magnetoelectric effect in the FM/FE heterostructure was indeed a feasible method to control magnetization orientation in technologically relevant ferromagnetic thin films at room temperature.
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Affiliation(s)
- Fenglong Wang
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000 People’s Republic of China
| | - Cai Zhou
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000 People’s Republic of China
| | - Dunzhu Gesang
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000 People’s Republic of China
| | - Changjun Jiang
- Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University, Lanzhou, 730000 People’s Republic of China
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46
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Deterministic and robust room-temperature exchange coupling in monodomain multiferroic BiFeO 3 heterostructures. Nat Commun 2017; 8:1583. [PMID: 29146896 PMCID: PMC5691063 DOI: 10.1038/s41467-017-01581-6] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/25/2017] [Accepted: 09/27/2017] [Indexed: 11/08/2022] Open
Abstract
Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO3 films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed, with ~ 90° in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. This has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO3.
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47
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Schoenherr P, Giraldo LM, Lilienblum M, Trassin M, Meier D, Fiebig M. Magnetoelectric Force Microscopy on Antiferromagnetic 180 ∘ Domains in Cr₂O₃. MATERIALS 2017; 10:ma10091051. [PMID: 28880233 PMCID: PMC5615706 DOI: 10.3390/ma10091051] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/28/2017] [Revised: 08/18/2017] [Accepted: 08/23/2017] [Indexed: 11/16/2022]
Abstract
Magnetoelectric force microscopy (MeFM) is characterized as methodical tool for the investigation of antiferromagnetic domain states, in particular of the 180∘ variety. As reference compound for this investigation we use Cr2O3. Access to the antiferromagnetic order is provided by the linear magnetoelectric effect. We resolve the opposite antiferromagnetic 180∘ domain states of Cr2O3 and estimate the sensitivity of the MeFM approach, its inherent advantages in comparison to alternative techniques and its general feasibility for probing antiferromagnetic order.
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Affiliation(s)
- Peggy Schoenherr
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zürich, Switzerland.
| | - L Marcela Giraldo
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zürich, Switzerland.
| | - Martin Lilienblum
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zürich, Switzerland.
| | - Morgan Trassin
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zürich, Switzerland.
| | - Dennis Meier
- Department of Materials Science and Engineering, Norwegian University of Science and Technology, Sem Sælandsvei 12, 7034 Trondheim, Norway.
| | - Manfred Fiebig
- Department of Materials, ETH Zurich, Vladimir-Prelog-Weg 4, 8093 Zürich, Switzerland.
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Gao T, Zhang X, Ratcliff W, Maruyama S, Murakami M, Varatharajan A, Yamani Z, Chen P, Wang K, Zhang H, Shull R, Bendersky LA, Unguris J, Ramesh R, Takeuchi I. Electric-Field Induced Reversible Switching of the Magnetic Easy Axis in Co/BiFeO 3 on SrTiO 3. NANO LETTERS 2017; 17:2825-2832. [PMID: 28418675 DOI: 10.1021/acs.nanolett.6b05152] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Electric-field (E-field) control of magnetism enabled by multiferroic materials has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme has only been demonstrated at room temperature using BiFeO3 films grown on DyScO3, a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BiFeO3. Here, we demonstrate reversible electric-field-induced switching of the magnetic state of the Co layer in Co/BiFeO3 (BFO) (001) thin film heterostructures fabricated on (001) SrTiO3 (STO) substrates. The angular dependence of the coercivity and the remanent magnetization of the Co layer indicates that its easy axis reversibly switches back and forth 45° between the (100) and the (110) crystallographic directions of STO as a result of alternating application of positive and negative voltage pulses between the patterned top Co electrode layer and the (001) SrRuO3 (SRO) layer on which the ferroelectric BFO is epitaxially grown. The coercivity (HC) of the Co layer exhibits a hysteretic behavior between two states as a function of voltage. A mechanism based on the intrinsic magnetoelectric coupling in multiferroic BFO involving projection of antiferromagnetic G-type domains is used to explain the observation. We have also measured the exact canting angle of the G-type domain in strained BFO films for the first time using neutron diffraction. These results suggest a pathway to integrating BFO-based devices on Si wafers for implementing low power consumption and nonvolatile magnetoelectronic devices.
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Affiliation(s)
- Tieren Gao
- Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States
| | - Xiaohang Zhang
- Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States
| | | | - Shingo Maruyama
- Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States
| | - Makoto Murakami
- Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States
| | | | - Zahra Yamani
- Canadian Neutron Beam Centre, National Research Council, Chalk River Laboratories, Chalk River, Ontario Canada K0J 1J0
| | | | | | - Huairuo Zhang
- Theiss Research , La Jolla, California 92037, United States
| | | | | | | | - Ramamoorthy Ramesh
- Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States
| | - Ichiro Takeuchi
- Department of Materials Science and Engineering, University of Maryland , College Park, Maryland 20742, United States
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49
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Zhao S, Zhou Z, Peng B, Zhu M, Feng M, Yang Q, Yan Y, Ren W, Ye ZG, Liu Y, Liu M. Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1606478. [PMID: 28256772 DOI: 10.1002/adma.201606478] [Citation(s) in RCA: 6] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2016] [Revised: 01/19/2017] [Indexed: 06/06/2023]
Abstract
Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+ [TFSI]- /Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V-1 . Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.
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Affiliation(s)
- Shishun Zhao
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Ziyao Zhou
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Bin Peng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Mingmin Zhu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Mengmeng Feng
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Qu Yang
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuan Yan
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Wei Ren
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Zuo-Guang Ye
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
- Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada
| | - Yaohua Liu
- Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA
| | - Ming Liu
- Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China
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50
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Tuning the multiferroic mechanisms of TbMnO 3 by epitaxial strain. Sci Rep 2017; 7:44753. [PMID: 28317838 PMCID: PMC5357786 DOI: 10.1038/srep44753] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/04/2016] [Accepted: 02/13/2017] [Indexed: 11/09/2022] Open
Abstract
A current challenge in the field of magnetoelectric multiferroics is to identify systems that allow a controlled tuning of states displaying distinct magnetoelectric responses. Here we show that the multiferroic ground state of the archetypal multiferroic TbMnO3 is dramatically modified by epitaxial strain. Neutron diffraction reveals that in highly strained films the magnetic order changes from the bulk-like incommensurate bc-cycloidal structure to commensurate magnetic order. Concomitant with the modification of the magnetic ground state, optical second-harmonic generation (SHG) and electric measurements show an enormous increase of the ferroelectric polarization, and a change in its direction from along the c- to the a-axis. Our results suggest that the drastic change of multiferroic properties results from a switch of the spin-current magnetoelectric coupling in bulk TbMnO3 to symmetric magnetostriction in epitaxially-strained TbMnO3. These findings experimentally demonstrate that epitaxial strain can be used to control single-phase spin-driven multiferroic states.
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