Substrate-induced symmetry breaking in silicene

Chiral Honeycomb Lattices of Nonplanar π-Conjugated Supramolecules with Protected Dirac and Flat Bands

The honeycomb lattice is a fundamental two-dimensional (2D) network that gives rise to surprisingly rich electronic properties. While its expansion to 2D supramolecular assembly is conceptually appealing, its realization is not straightforward because of weak intermolecular coupling and the strong influence of a supporting substrate. Here, we show that the application of a triptycene derivative with phenazine moieties, Trip-Phz, solves this problem due to its strong intermolecular π-π pancake bonding and nonplanar geometry. Our scanning tunneling microscopy (STM) measurements demonstrate that Trip-Phz molecules self-assemble on a Ag(111) surface to form chiral and commensurate honeycomb lattices. Electronically, the network can be viewed as a hybrid of honeycomb and kagome lattices. The Dirac and flat bands predicted by a simple tight-binding model are reproduced by total density functional theory (DFT) calculations, highlighting the protection of the molecular bands from the Ag(111) substrate. The present work offers a rational route for creating chiral 2D supramolecules that can simultaneously accommodate pristine Dirac and flat bands.

Energetically Favored 2D to 3D Transition: Why Silicene Cannot Be Grown on Ag(111)

Silicene, a two-dimensional (2D) Si monolayer with properties similar to those of graphene, has attracted considerable attention because of its compatibility with existing technology. Most growth efforts to date have focused on the Ag(111) substrate, with a 3 × 3 phase widely reported below one monolayer (ML). As the coverage increases, a √3 × √3 pattern frequently emerges, which has been proposed by various experimental investigations as a Si ( 111 ) - 3 × 3 - Ag reconstructed structure. We report first-principles calculations to understand this series of observations. A major finding from our energetics studies is that Si growth on Ag(111) beyond one ML will switch to the Volmer-Weber mode, forming three-dimensional sp3 films. Combining with the condition that the 3 × 3 monolayer on Ag(111) does not have the correct buckling pattern of freestanding silicene, we conclude that silicene cannot be grown on Ag(111) and that a 2D to 3D transition is energetically favored beyond one ML.

Silicene growth mechanisms on Au(111) and Au(110) substrates

Despite the remarkable theoretical applications of silicene, its synthesis remains a complex task, with epitaxial growth being one of the main routes involving depositing evaporated Si atoms onto a suitable substrate. Additionally, the requirement for a substrate to maintain the silicene stability poses several difficulties in accurately determining the growth mechanisms and the resulting structures, leading to conflicting results in the literature. In this study, large-scale molecular dynamics simulations are performed to uncover the growth mechanisms and characteristics of epitaxially grown silicene sheets on Au(111) and Au(110) substrates, considering different temperatures and Si deposition rates. The growth process has been found to initiate with the nucleation of several independent islands homogeneously distributed on the substrate surface, which gradually merge to form a complete silicene sheet. The results consistently demonstrate the presence of a buckled silicene structure, although this characteristic is notably reduced when using an Au(111) substrate. Furthermore, the analysis also focuses on the quality and growth mode of the silicene sheets, considering the influence of temperature and deposition rate. The findings reveal a prevalence of the Frank-van der Merwe growth mode, along with diverse forms of defects throughout the sheets.

Anomalous intralayer growth of epitaxial Si on Ag(111)

The epitaxial growth of silicene has been the subject of many investigations, controversies and non-classical results. In particular, the initially promising deposition of Si on a metallic substrate such as Ag(111) has revealed unexpected growth modes where Si is inserted at the beginning of the growth in the first atomic plane of the substrate. In order to rationalize this anomalous growth mode, we develop an out-of-equilibrium description of a lattice-based epitaxial growth model, which growth dynamics are analyzed via kinetic Monte-Carlo simulations. This model incorporates several effects revealed by the experiments such as the intermixing between Si and Ag, and surface effects. It is parametrized thanks to an approach in which we show that relatively precise estimates of energy barriers can be deduced by meticulous analysis of atomic microscopy images. This analysis enables us to reproduce both qualitatively and quantitatively the anomalous growth patterns of Si on Ag(111). We show that the dynamics results in two modes, a classical sub-monolayer growth mode at low temperature, and an inserted growth mode at higher temperatures, where the deposited Si atoms insert in the first layer of the substrate by replacing Ag atoms. Furthermore, we reproduce the non-standard [Formula: see text] shape of the experimental plot of the island density as a function of temperature, with a shift in island density variation during the transition between the submonoloyer and inserted growth modes.

Arsenic Monolayers Formed by Zero-Dimensional Tetrahedral Clusters and One-Dimensional Armchair Nanochains

One-dimensional (1D) arsenene nanostructures are predicted to host a variety of interesting physical properties including antiferromagnetic, semiconductor-semimetal transition and quantum spin Hall effect, which thus holds great promise for next-generation electronic and spintronic devices. Herein, we devised a surface template strategy in a combination with surface-catalyzed decomposition of molecular As₄ cluster toward the synthesis of the superlattice of ultranarrow armchair arsenic nanochains in a large domain on Au(111). In the low annealing temperature window, zero-dimensional As₄ nanoclusters are assembled into continuous films through intermolecular van der Waals and molecule-substrate interactions. At the elevated temperature, the subsequent surface-assisted decomposition of molecular As₄ nanoclusters leads to the formation of a periodic array of 1D armchair arsenic nanochains that form a (2 × 3) superstructure on the Au(111) surface. These ultranarrow armchair arsenic nanochains are predicted to have a small bandgap of ∼0.50 eV, in contrast to metallic zigzag chains. In addition, the Au-supported arsenic nanochains can be flipped to form a bilayer structure through tip indentation and manipulation, suggesting the possible transfer of these nanochains from the substrate. The successful realization of arsenic nanostructures is expected to advance low-dimensional physics and infrared optoelectronic nanodevices.

Several semiconducting two-dimensional silicon nanosheets assembled from zigzag silicene nanoribbons

Semiconducting two-dimensional intrinsic silicon nanosheets are ideal materials for many applications in modern industry, since they are the only ones that can match well with previous silicon components. However, such materials are still lacking, especially those with moderate band gaps. In this work, by using first-principles theory, a series of two-dimensional intrinsic silicon nanosheets are assembled from zigzag silicene nanoribbons with different widths. The result shows that all the nanosheets behave as semiconductors, although some of them possess small band gaps of dozens of meV. Two of them, individually assembled from the two narrowest zigzag silicene nanoribbons, possess the largest indirect band gaps of 0.20 and 0.26 eV, respectively. Under low compressive strain, these two nanosheets would turn into quasi-direct or direct band gap semiconductors, and the gaps increase up to 0.62 or 0.54 eV, respectively. Due to the electron transfer from three-fold to four-fold coordinated Si atoms, the charge carriers prefer to transport along the zigzag direction, and electrons and holes transport in the respective Si chains. Interestingly, the investigation of Poisson's ratio reveals that the assembled silicon nanosheets have a negative Poisson's ratio in certain strain ranges if the width n of zigzag silicene nanoribbons is even. This work provides a new approach to design semiconducting silicon nanosheets and benefits to the applications of two-dimensional silicon nanosheets in many electronic and mechanical fields.

Dielectric screening versus geometry deformation in two-dimensional allotropes of silicon and germanium

The search for connections between electronic and structural features is a key factor in the synthesis of artificial materials for on-demand applications, with graphene and analogous elemental semimetals playing a distinguished role as building blocks of photonic and plasmonic systems. In particular, a diversity of arrangements and electronic-state dispersions is offered by currently synthesized two-dimensional allotropes of silicon and germanium, respectively known as silicene and germanene. These monolayers make the ideal playground to understand how their collective and single-particle electronic states, excited by electron or light beams, may be controlled by geometry rather than doping or gating. Here, we provide such a study using time-dependent density-functional theory, in the random-phase approximation, to identify the structural dependent properties of charge-density plasmon oscillations and optical absorption in flat to buckled silicene and germanene lattices. We further single out flat germanene as an unprecedented two-dimensional conductor, hosting Dirac cone fermions in parallel with metal-like charge carriers, which contribute to strong intraband plasmon modes and one-electron excitations in the far-infrared limit. Finally, we show how this atypical scenario can be tuned by external stress or strain.

Van der Waals Heteroepitaxy of Air-Stable Quasi-Free-Standing Silicene Layers on CVD Epitaxial Graphene/6H-SiC

Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling-bond-free surface, is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g., turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1 ML Gr buffer) on a 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultraclean conditions for molecular beam epitaxy deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene. At low coverages, the deposition of Si produces large silicene sheets (some hundreds of nanometers large) attested by both AFM and SEM observations and the onset of a Raman peak at 560 cm^-1, very close to the theoretical value of 570 cm^-1 calculated for free-standing silicene. This vibrational mode at 560 cm^-1 represents the highest ever experimentally measured value and is representative of quasi-free-standing silicene with almost no interaction with inert nonmetal substrates. From a coverage rate of 1 ML, the silicene sheets disappear at the expense of 3D Si dendritic islands whose density, size, and thickness increase with the deposited thickness. From this coverage, the Raman mode assigned to quasi-free-standing silicene totally vanishes, and the 2D flakes of silicene are no longer observed by AFM. The experimental results are in very good agreement with the results of kinetic Monte Carlo simulations that rationalize the initial flake growth in solid-state dewetting conditions, followed by the growth of ridges surrounding and eventually covering the 2D flakes. A full description of the growth mechanism is given. This study, which covers a wide range of growth parameters, challenges recent results stating the impossibility to grow silicene on a carbon inert surface and is very promising for large-scale silicene growth. It shows that silicene growth can be achieved using perfectly controlled and ultraclean deposition conditions and an almost defect-free Gr substrate.

Germanium Nanosheets with Dirac Characteristics as a Saturable Absorber for Ultrafast Pulse Generation

Bulk germanium as a group-IV photonic material has been widely studied due to its relatively large refractive index and broadband and low propagation loss from near-infrared to mid-infrared. Inspired by the research of graphene, the 2D counterpart of bulk germanium, germanene, has been discovered and the characteristics of Dirac electrons have been observed. However, the optical properties of germanene still remain elusive. In this work, several layers of germanene are prepared with Dirac electronic characteristics and its morphology, band structure, carrier dynamics, and nonlinear optical properties are systematically investigated. It is surprisingly found that germanene has a fast carrier-relaxation time comparable to that of graphene and a relatively large nonlinear absorption coefficient, which is an order of magnitude higher than that of graphene in the near-infrared wavelength range. Based on these findings, germanene is applied as a new saturable absorber to construct an ultrafast mode-locked laser, and sub-picosecond pulse generation in the telecommunication band is realized. The results suggest that germanene can be used as a new type of group-IV material for various nonlinear optics and photonic applications.

Optical Signatures of Dirac Electrodynamics for hBN-Passivated Silicene on Au(111)

The allotropic affinity for bulk silicon and unique electronic and optical properties make silicene a promising candidate for future high-performance devices compatible with mature complementary metal-oxide-semiconductor technology. However, silicene's outstanding properties are not preserved on its most prominent growth templates, due to strong substrate interactions and hybridization effects. In this letter, we report the optical properties of silicene epitaxially grown on Au(111). A novel in situ passivation methodology with few-layer hexagonal boron nitride enables detailed ex situ characterization at ambient conditions via μ-Raman spectroscopy and reflectance measurements. The optical properties of silicene on Au(111) appeared to be in accordance with the characteristics predicted theoretically for freestanding silicene, allowing the conclusion that its prominent electronic properties are preserved. The absorption features are, however, modified by many-body effects induced by the Au substrate due to an increased screening of electron-hole interactions.

Highly Biaxially Strained Silicene on Au(111)

Many of graphene's remarkable properties arise from its linear dispersion of the electronic states, forming a Dirac cone at the K points of the Brillouin zone. Silicene, the 2D allotrope of silicon, is also predicted to show a similar electronic band structure, with the addition of a tunable bandgap, induced by spin-orbit coupling. Because of these outstanding electronic properties, silicene is considered as a promising building block for next-generation electronic devices. Recently, it has been shown that silicene grown on Au(111) still possesses a Dirac cone, despite the interaction with the substrate. Here, to fully characterize the structure of this 2D material, we investigate the vibrational spectrum of a monolayer silicene grown on Au(111) by polarized Raman spectroscopy. To enable a detailed ex situ investigation, we passivated the silicene on Au(111) by encapsulating it under few layers hBN or graphene flakes. The observed spectrum is characterized by vibrational modes that are strongly red-shifted with respect to the ones expected for freestanding silicene. By comparing low-energy electron diffraction (LEED) patterns and Raman results with first-principles calculations, we show that the vibrational modes indicate a highly (>7%) biaxially strained silicene phase.

Silicene/ZnI2van der Waals heterostructure: tunable structural and electronic properties

By utilizingab initiodensity functional theory, the structural and electronic properties of novel silicene/ZnI₂heterobilayers (HBLs) were investigated. Constructing HBLs with ZnI₂in different stacking configurations leads to direct bandgap opening of silicene at K point, which ranges from 138.2 to 201.2 meV. By analyzing the projected density of states and charge density distribution, we found that the predicted HBLs conserve the electronic properties of silicene and ZnI₂can serve as a decent substrate. The tunability of electronic properties can be achieved by enforcing biaxial strain and by varying interlayer distance where bandgap can get as low as zero to as high as 318.8 meV and 290.7 meV, respectively depending on the stacking patterns. Maintenance of the remarkable features of silicene, high mobility of charge carriers, and fine-tuning of bandgap pave the way to construct new nanoelectronic devices using these novel silicene/ZnI₂HBLs.

Unoccupied electronic states of 2D Si on Ag-3-Si(111)

Optimizing substrate characterization to grow 2D Si layers on surfaces is a major issue toward the development of synthesis techniques of the promising silicene. We have used inverse photoemission spectroscopy (IPES) to study the electronic band structure of an ordered 2D Si layer on the3×3-Ag/Si(111) surface (3-Ag). Exploiting the large upwards band bending of the3-Ag substrate, we could investigate the evolution of the unoccupied surface and interface states in most of the Si band gap. In particular, thek_∥-dispersion of the3-Ag free-electron-likeS₁surface state measured by IPES, is reported for the first time. Upon deposition of ∼1 ML Si on3-Ag maintained at ∼200 °C, the interface undergoes a metal-insulator transition with the complete disappearance of theS₁state. The latter is replaced by a higher-lying stateU₀with a minimum at 1.0 eV aboveE_F. The origin of this new state is discussed in terms of various Si 2D structures including silicene.

Density functional theory study of the mechanical behavior of silicene and development of a Tersoff interatomic potential model tailored for elastic behavior

Silicene, a graphene-like 2D material made from Si atoms, has been fabricated and studied for its promising applications in micro/nanoelectronics. For the reliable function of silicene devices, it is important to investigate silicene's mechanical properties. In this study, the authors conducted density functional theory (DFT) simulations of mechanical tests of silicene and investigated the elastic modulus and mechanical response such as structural transformation. In addition, the authors optimized the Tersoff potential parameters using a gradient-based minimization with a grid search method in hyperdimensional parameter space, to match the DFT calculation results in the elastic regime. With the new parameter set, the elastic moduli of silicene in the zigzag (ZZ) and armchair (AC) directions were computed with molecular statics (MS) simulations and compared with those of other Si interatomic potential models and DFT results. In addition, uniaxial tensile tests along the ZZ and AC directions were performed to examine how far the Tersoff model is transferable with our new parameter set to describe the nonlinear mechanical behavior of silicene. The results of uniaxial tensile tests suggest that the angle penalty function in the Tersoff model needs to be modified and that the stress-strain curve predicted with this modification shows improvement compared to the original function.

Effective Hamiltonian for silicene under arbitrary strain from multi-orbital basis

A tight-binding (TB) Hamiltonian is derived for strained silicene from a multi-orbital basis. The derivation is based on the Slater-Koster coupling parameters between different orbitals across the silicene lattice and takes into account arbitrary distortion of the lattice under strain, as well as the first and second-order spin-orbit interactions (SOI). The breaking of the lattice symmetry reveals additional SOI terms which were previously neglected. As an exemplary application, we apply the linearized low-energy TB Hamiltonian to model the current-induced spin accumulation in strained silicene coupled to an in-plane magnetization. The interplay between symmetry-breaking and the additional SOI terms induces an out-of-plane spin accumulation. This spin accumulation remains unbalanced after summing over the Fermi surfaces of the occupied bands and the two valleys, and can thus be utilized for spin torque switching.

Moiré-Potential-Induced Band Structure Engineering in Graphene and Silicene

A moiré pattern results from the projection of one periodic pattern to another with relative lattice constant or misalignment and provides great periodic potential to modify the electronic properties of pristine materials. In this Review, recent research on the effect of the moiré superlattice on the electronic structures of graphene and silicene, both of which possess a honeycomb lattice, is focused on. The moiré periodic potential is introduced by the interlayer interaction to realize abundant phenomena, including new generation of Dirac cones, emergence of Van Hove singularities (vHs) at the cross point of two sets of Dirac cones, Mott-like insulating behavior at half-filling state, unconventional superconductivity, and electronic Kagome lattice and flat band with nontrivial edge state. The role of interlayer coupling strength, which is determined by twist angle and buckling degree, in these exotic properties is discussed in terms of both the theoretical prediction and experimental measurement, and finally, the challenges and outlook for this field are discussed.

Polymorphism in Post-Dichalcogenide Two-Dimensional Materials

Two-dimensional (2D) materials exhibit a wide range of atomic structures, compositions, and associated versatility of properties. Furthermore, for a given composition, a variety of different crystal structures (i.e., polymorphs) can be observed. Polymorphism in 2D materials presents a fertile landscape for designing novel architectures and imparting new functionalities. The objective of this Review is to identify the polymorphs of emerging 2D materials, describe their polymorph-dependent properties, and outline methods used for polymorph control. Since traditional 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) have already been studied extensively, the focus here is on polymorphism in post-dichalcogenide 2D materials including group III, IV, and V elemental 2D materials, layered group III, IV, and V metal chalcogenides, and 2D transition metal halides. In addition to providing a comprehensive survey of recent experimental and theoretical literature, this Review identifies the most promising opportunities for future research including how 2D polymorph engineering can provide a pathway to materials by design.

Reversible Potassium Intercalation in Blue Phosphorene-Au Network Driven by an Electric Field

Foreign atom intercalation into an interface alters the strength of interlayer interaction and leads to the novel types of desirable properties. Here, we report an investigation via scanning tunnelling microscopy (STM) and scanning tunnelling spectroscopy (STS) of reversible potassium (K) intercalation in the blue phosphorene (blueP)-Au network that can be locally induced by an external electric field. The unique structure of the blueP-Au network provides large space in its pores for the intercalation and deintercalation process. The X-ray photoemission spectroscopy results reveal that the intercalated K atoms are bonded with Au atoms in substrate, which weakens the interaction between the blueP-Au network and Au(111). The STS and angle-resolved photoemission spectroscopy results indicate that the electronic properties of the blueP-Au network have been modulated after the K intercalation. Such reversible intercalation and deintercalation transitions in the blueP-Au network are relevant for the design of the nanoelectronic devices as well as for its application in K-ion batteries.

Scanning tunneling spectroscopy studies of topological materials

Topological materials have become promising materials for next-generation devices by utilizing their exotic electronic states. Their exotic states caused by spin-orbital coupling usually locate on the surfaces or at the edges. Scanning tunneling spectroscopy (STS) is a powerful tool to reveal the local electronic structures of condensed matters. Therefore, STS provides us with an almost perfect method to access the exotic states of topological materials. In this topical review, we report the current investigations by several methods based on the STS technique for layered topological material from transition metal dichalcogenide Weyl semimetals (WTe₂ and MoTe₂) to two dimensional topological insulators (layered bismuth and silicene). The electronic characteristics of these layered topological materials are experimentally identified.

The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions

Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus-like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.

Account of the diversity of tunneling spectra at the germanene/Al(1 1 1) interface

Despite the wealth of tunneling spectroscopic studies performed on silicene and germanene, the observation of a well-defined Dirac cone in these materials remains elusive. Here, we study germanene grown on Al(1 1 1) at submonolayer coverages with low temperature scanning tunneling spectroscopy. We show that the tunnelling spectra of the Al(1 1 1) surface and the germanene nanosheets are identical. They exhibit a clear metallic behaviour at the beginning of the experiments, that highlights the strong electronic coupling between the adlayer and the substrate. Over the course of the experiments, the spectra deviate from this initial behaviour, although consecutive spectra measured on the Al(1 1 1) surface and germanene nanosheets are still similar. This spectral diversity is explained by modifications of the tip apex, that arise from the erratic manipulation of the germanium adlayer. The origin of the characteristic features such as a wide band gap, coherence-like peaks or zero-bias anomalies are tentatively discussed in light of the physical properties of Ge and AlGe alloy clusters, that are likely to adsorb at the tip apex.

SiGe/AsSb bilayer heterostructures: structural characteristics and tunable electronic properties

Tunable band gap along with high carrier mobility are attractive characteristics for high speed nano electronic device applications. In this work we studied the structural and electronic properties of atomically thin silicon germanide (SiGe) and antimony arsenide (AsSb) heterobilayers using first principle calculations within density functional theory. Monolayer SiGe is a semimetal with a Dirac cone at the K point of the Brillouin zone (BZ) which combines superior properties of germanene and synthesis advantages of silicene. The study shows that a considerable band gap (90-459 meV) is introduced in SiGe when modulated by monolayer AsSb without degrading the carrier mobility. Moreover AsSb introduces negligible lattice mismatch in optimized heterobilayers which is favorable for synthesis purposes. We studied the density of states and space charge distribution to investigate the mechanism of the band gap opening and interlayer binding. Finally we modulated the band gap at K the point of the BZ efficiently by applying biaxial strain and also by changing the interlayer spacing. The calculated electron effective mass as a function of strain reveals that linear energy dispersion relation is preserved and the effective mass remains significantly small within the strained structure. The results predict that SiGe/AsSb heterobilayers can be an excellent choice in Si and Ge-based nano electronics and spintronic applications.

Tunable spin-polarized band gap in Si2/NiI2 vdW heterostructure

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers. We observe an interaction between the two layers with a net charge transfer from the ferromagnetic semiconductor NiI₂ to silicene, breaking the inversion symmetry of the silicene structure. However, the charges flow in opposite directions for the two spin channels, which leads to a vdW heterostructure with a spin-polarized band gap between the π and π* states. The band gap can be tuned by controlling the vertical distance between the layers. The features shown by this vdW heterostructure are new, and we believe that silicene on a NiI₂ layer can be used to construct heterostructures which have appropriate properties to be used in nanodevices where control of the spin-dependent carrier mobility is necessary and can be incorporated into silicon based electronics.

Using density functional theory (DFT) calculations we investigate the structural and electronic properties of a heterogeneous van der Waals (vdW) structure consisting of silicene and NiI₂ single layers.

Quantitative determination of atomic buckling of silicene by atomic force microscopy

The atomic buckling in 2D "Xenes" (such as silicene) fosters a plethora of exotic electronic properties such as a quantum spin Hall effect and could be engineered by external strain. Quantifying the buckling magnitude with subangstrom precision is, however, challenging, since epitaxially grown 2D layers exhibit complex restructurings coexisting on the surface. Here, we characterize using low-temperature (5 K) atomic force microscopy (AFM) with CO-terminated tips assisted by density functional theory (DFT) the structure and local symmetry of each prototypical silicene phase on Ag(111) as well as extended defects. Using force spectroscopy, we directly quantify the atomic buckling of these phases within 0.1-Å precision, obtaining corrugations in the 0.8- to 1.1-Å range. The derived band structures further confirm the absence of Dirac cones in any of the silicene phases due to the strong Ag-Si hybridization. Our method paves the way for future atomic-scale analysis of the interplay between structural and electronic properties in other emerging 2D Xenes.

Superstructure-Induced Splitting of Dirac Cones in Silicene

Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is (3×3)-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dirac cone pairs at the Brillouin zone boundary of Ag(111), but their origin remains unclear [Proc. Natl. Acad. Sci. USA 113, 14656 (2016)]. We used linear dichroism angle-resolved photoemission spectroscopy, the tight-binding model, and first-principles calculations to reveal that these Dirac cones mainly derive from the original cones at the K (K^{'}) points of free-standing silicene. The Dirac cones of free-standing silicene are split by external periodic potentials that originate from the substrate-overlayer interaction. Our results not only confirm the origin of the Dirac cones in the (3×3)-silicene/Ag(111) system, but also provide a powerful route to manipulate the electronic structures of two-dimensional materials.

Silicene Passivation by Few-Layer Graphene

The stabilization of silicene at ambient conditions is essential for its characterization, future processing, and device integration. Here, we demonstrate in situ encapsulation of silicene on Ag(111) by exfoliated few-layer graphene (FLG) flakes, allowing subsequent Raman analysis under ambient conditions. Raman spectroscopy measurements proved that FLG capping serves as an effective passivation, preventing degradation of silicene for up to 48 h. The acquired data are consistent with former in situ Raman measurements, showing two characteristic peaks, located at 216 and 515 cm^-1. Polarization-dependent measurements allowed to identify the two modes as A and E, demonstrating that the symmetry properties of silicene are unaltered by the capping process.

Spin-polarized magneto-electronic properties in buckled monolayer GaAs

We develop the generalized tight-binding model to fully explore the magneto-electronic properties of monolayer GaAs, where the buckled structure, multi-orbital chemical bondings, spin-orbit coupling, electric field, and magnetic field are considered simultaneously. The diverse magnetic quantization covers three groups of spin-polarized Landau levels (LLs) near the Fermi level, with the unique initial energies, LL degeneracy, energy spacings, magnetic-field-dependence, and spin splitting. Furthermore, the Landau state probabilities exhibit specific oscillation patterns, being composed of the localization centers, node regularities, and energy-dependent variations of the dominating orbitals. The density of states directly reflects the main features of the LL energy spectra in the form, height, number, and frequency of the spin-split delta-function-like prominent peaks. The electric field leads to the monotonous/nonmonotonous LL energy dispersions, LL crossing behavior, gap modulation, phase transition and enhancement of spin splitting. The complex gap modulations and even semiconductor-semimetal transitions are attributed to the strong competition among the intrinsic interactions, magnetic field, and electric field. Such predicted magneto-electronic properties could be verified by scanning tunneling spectroscopy and are helpful in designing the top-gated and phase-change electronic devices.

Adsorption of toxic gases on silicene/Ag(111)

Silicene/Ag(111) demonstrates many unique properties, and shows potential in sensing and storage applications of toxic gases such as SO₂, NO₂ and H₂S.

Structural and electronic properties of a van der Waals heterostructure based on silicene and gallium selenide: effect of strain and electric field

Combining van der Waals heterostructures by stacking different two-dimensional materials on top of each other layer-by-layer can enhance their desired properties and greatly extend the applications of the parent materials. In this work, by means of first principles calculations, we investigate systematically the structural and electronic properties of six different stacking configurations of a Si/GaSe heterostructure. The effect of biaxial strain and electric field on the electronic properties of the most energetically stable configuration of the Si/GaSe heterostructure has also been discussed. At the equilibrium state, the electronic properties of the Si/GaSe heterostructure in all its stacking configurations are well kept as compared with that of single layers owing to their weak van der Waals interactions. Interestingly, we find that a sizable band gap is opened at the Dirac K point of silicene in the Si/GaSe heterostructure, which could be further controlled by biaxial strain or electric field. These findings open up a possibility for designing silicene-based electronic devices, which exhibit a controllable band gap. Furthermore, the Si/GaSe heterostructure forms an n-type Schottky contact with a small Schottky barrier height of 0.23 eV. A transformation from the n-type Schottky contact to a p-type one, or from the Schottky contact to an ohmic contact may occur in the Si/GaSe heterostructure when strain or an electric field is applied.

Band Renormalization of Blue Phosphorus on Au(111)

Most recently, theoretical calculations predicted the stability of a novel two-dimensional phosphorus honeycomb lattice named blue phosphorus. Here, we report on the growth of blue phosphorus on Au(111) and unravel its structural details using diffraction, microscopy and theoretical calculations. Most importantly, by utilizing angle-resolved photoemission spectroscopy we identify its momentum-resolved electronic structure. We find that Au(111) breaks the sublattice symmetry of blue phosphorus leading to an orbital-dependent band renormalization upon the formation of a (4 × 4) superstructure. Notably, the semiconducting two-dimensional phosphorus realizes its valence band maximum at 0.9 eV binding energy, however, shifted in momentum space due to the substrate-induced band renormalization.

Recent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides

Since the discovery of graphene just over a decade ago, 2D materials have been a central focus of materials research and engineering because of their unique properties and potential of revealing intriguing new phenomena. In the past few years, transition metal dichalcogenides (TMDs) have also attracted considerable attention because of the intrinsically opened bandgap. The exceptional properties and potential applications of graphene and TMDs have inspired explosive efforts to discover novel 2D materials. Here, emerging novel 2D materials are summarized and recent progress in the preparation, characterization, and application of 2D materials is highlighted. The experimental realization methods for these materials are emphasized, while the large-area growth and controlled patterning for industrial productions are discussed. Finally, the remaining challenges and potential applications of 2D materials are outlined.

Transport and Photoelectric Properties of 2D Silicene/MX2 (M = Mo, W; X = S, Se) Heterostructures

The transport and photoelectric properties of four two-dimensional (2D) silicene/MX₂ (M = Mo, W; X = S, Se) heterostructures have been investigated by employing density functional theory, nonequilibrium Green's function, and Keldysh nonequilibrium Green's function methods. The stabilities of silicene (SiE) are obviously improved after being placed on the MX₂ (M = Mo, W; X = S, Se) substrates. In particular, the conductivities of SiE/MX₂ are enhanced compared with free-standing SiE and MX₂. Moreover, the conductivities are increased with the group number of X, i.e., in the order of SiE < SiE/MS₂ < SiE/MSe₂. An evident current oscillation phenomenon is observed in the SiE/WX₂ heterostructures. When a linear light illumination is applied, SiE/MSe₂ shows a stronger photoresponse than SiE/MS₂. The maximum photoresponse with a value of 9.0a ₀ ²/photon was obtained for SiE/WSe₂. More importantly, SiE/MS₂ (M = Mo, W) heterostructures are good candidates for application in designing solar cells owing to the well spatial separation of the charge carriers. This work provides some clues for further exploring 2D SiE/MX₂ heterostructures involving tailored photoelectric properties.

Ideal inert substrates for planar antimonene: h-BN and hydrogenated SiC(0001)

Planar antimonene, as one of the most promising two-dimensional materials, was recently obtained on a Ag(111) substrate [Y. Shao, Z. L. Liu, et al., Nano Lett., 2018, 18, 2133]. However, its particular electronic properties are severely degraded due to the substrate, making its further study and practical applications challenging. Here, using first-principles calculations, we propose that h-BN and hydrogenated SiC(0001) are extraordinary substrates of planar antimonene. Their interactions with planar antimonene exhibit low binding energies and large interlayer distances, and are typical van der Waals interactions. Most importantly, the bands of planar antimonene near the Fermi level are perfectly preserved, with the bands of h-BN and hydrogenated SiC(0001) lying away from the Fermi level. Moreover, such features are inert to the stacking patterns for both systems, making them suitable for practical applications. Our results will greatly broaden the scientific and technological impact of planar antimonene.

Tuning the mechanical properties of silicene nanosheet by auxiliary cracks: a molecular dynamics study

Silicene has become a topic of interest nowadays due to its potential application in various electro-mechanical nanodevices. In our previous work on silicene, fracture stresses of single crystal and polycrystalline silicene have been investigated. Existence of defects in the form of cracks reduces the fracture strength of silicene nanosheets to a great extent. In this study, an engineering way has been proposed for improving the fracture stress of silicene nanosheets with a pre-existing crack by incorporating auxiliary cracks symmetrically in a direction perpendicular to the main crack. We call this mechanism the "Failure shielding mechanism". An extensive molecular dynamics simulation based analysis has been performed to capture the atomic level auxiliary crack-main crack interactions. It is found that the main crack tip stress distribution is significantly changed with the presence of auxiliary cracks for loading along both armchair and zigzag directions. The effects of temperature and the crack propagation speed of silicene have also been studied. Interestingly, in the case of loading along the zigzag direction, SW defect formation is observed at the tip of main crack. This leads to a reduction of the tip stress resulting in a more prominent failure shielding in case of zigzag loading than in armchair loading. Moreover, the position and length of the cracks as well as the loading directions have significant impacts on the tip stress distribution. Finally, this study opens the possibilities of strain engineering for silicene by proposing an engineering way to tailor the fracture strength of silicene.

Silicene, silicene derivatives, and their device applications

Silicene, the ultimate scaling of a silicon atomic sheet in a buckled honeycomb lattice, represents a monoelemental class of two-dimensional (2D) materials similar to graphene but with unique potential for a host of exotic electronic properties. Nonetheless, there is a lack of experimental studies largely due to the interplay between material degradation and process portability issues. This review highlights the state-of-the-art experimental progress and future opportunities in the synthesis, characterization, stabilization, processing and experimental device examples of monolayer silicene and its derivatives. The electrostatic characteristics of the Ag-removal silicene field-effect transistor exhibit ambipolar charge transport, corroborating with theoretical predictions on Dirac fermions and Dirac cone in the band structure. The electronic structure of silicene is expected to be sensitive to substrate interaction, surface chemistry, and spin-orbit coupling, holding great promise for a variety of novel applications, such as topological bits, quantum sensing, and energy devices. Moreover, the unique allotropic affinity of silicene with single-crystalline bulk silicon suggests a more direct path for the integration with or revolution to ubiquitous semiconductor technology. Both the materials and process aspects of silicene research also provide transferable knowledge to other Xenes like stanene, germanene, phosphorene, and so forth.

Substrate-induced magnetism and topological phase transition in silicene

Silicene has shown great potential for applications as a versatile material in nanoelectronics and is particularly promising as a building block for spintronic applications. Unfortunately, despite its intriguing properties, such as a relatively large spin-orbit interaction, one of the greatest obstacles to the use of silicene as a host material in spintronics is its lack of magnetism or a topological phase transition owing to the silicene-substrate interaction, which influences its fundamental properties and has yet to be fully investigated. Here, we show that when silicene is grown on a CeO2 substrate, an appreciable robust magnetic moment appears in silicene covalently bonded to CeO2 (111), while a topological phase transition from a topological insulator to a band insulator occurs regardless of van der Waals (vdW) interactions or covalent bonding interactions at the interface. The induced magnetism of silicene is due to the breaking of Si-Si π-bonds, which also results in a trivial topological phase. The silicene-substrate interaction, and even weak vdW forces (equivalent to an electric field), can destroy the quantum spin Hall effect (QSHE) in silicene. We propose a viable strategy-the construction of an inverse symmetrical sandwich structure (protective layer/silicene/substrate)-to preserve the quantum spin Hall (QSH) state of silicene in a system with weak vdW interactions. This work takes a critical step towards the fundamental physics and realistic applications of silicene-based spintronic devices.

Dirac Signature in Germanene on Semiconducting Substrate

2D Dirac materials supported by nonmetallic substrates are of particular interest due to their significance for the realization of the quantum spin Hall effect and their application in field-effect transistors. Here, monolayer germanene is successfully fabricated on semiconducting germanium film with the support of a Ag(111) substrate. Its linear-like energy-momentum dispersion and large Fermi velocity are derived from the pronounced quasiparticle interference patterns in a √3 × √3 superstructure. In addition to Dirac fermion characteristics, the theoretical simulations reveal that the energy gap opens at the Brillouin zone center of the √3 × √3 restructured germanene, which is evoked by the symmetry-breaking perturbation potential. These results demonstrate that the germanium nanosheets with √3 × √3 germanene can be an ideal platform for fundamental research and for the realization of high-speed and low-energy-consumption field-effect transistors.

Functionalization of group-14 two-dimensional materials

The great success of graphene has boosted intensive search for other single-layer thick materials, mainly composed of group-14 atoms arranged in a honeycomb lattice. This new class of two-dimensional (2D) crystals, known as 2D-Xenes, has become an emerging field of intensive research due to their remarkable electronic properties and the promise for a future generation of nanoelectronics. In contrast to graphene, Xenes are not completely planar, and feature a low buckled geometry with two sublattices displaced vertically as a result of the interplay between sp² and sp³ orbital hybridization. In spite of the buckling, the outstanding electronic properties of graphene governed by Dirac physics are preserved in Xenes too. The buckled structure also has several advantages over graphene. Together with the spin-orbit (SO) interaction it may lead to the emergence of various experimentally accessible topological phases, like the quantum spin Hall effect. This in turn would lead to designing and building new electronic and spintronic devices, like topological field effect transistors. In this regard an important issue concerns the electron energy gap, which for Xenes naturally exists owing to the buckling and SO interaction. The electronic properties, including the magnitude of the energy gap, can further be tuned and controlled by external means. Xenes can easily be functionalized by substrate, chemical adsorption, defects, charge doping, external electric field, periodic potential, in-plane uniaxial and biaxial stress, and out-of-plane long-range structural deformation, to name a few. This topical review explores structural, electronic and magnetic properties of Xenes and addresses the question of their functionalization in various ways, including external factors acting simultaneously. It also points to future directions to be explored in functionalization of Xenes. The results of experimental and theoretical studies obtained so far have many promising features making the 2D-Xene materials important players in the field of future nanoelectronics and spintronics.

Chemical modification of group IV graphene analogs

Mono-elemental two-dimensional (2D) crystals (graphene, silicene, germanene, stanene, and so on), termed 2D-Xenes, have been brought to the forefront of scientific research. The stability and electronic properties of 2D-Xenes are main challenges in developing practical devices. Therefore, in this review, we focus on 2D free-standing group-IV graphene analogs (graphene quantum dots, silicane, and germanane) and the functionalization of these sheets with organic moieties, which could be handled under ambient conditions. We highlight the present results and future opportunities, functions and applications, and novel device concepts.

Transition from silicene monolayer to thin Si films on Ag(111): comparison between experimental data and Monte Carlo simulation

Scanning tunneling microscopy (STM), Auger electron spectroscopy (AES) and low energy electron diffraction have been used to follow the growth of Si films on Ag(111) at various temperatures. Using a simple growth model, we have simulated the distribution of film thickness as a function of coverage during evaporation, for the different temperatures. In the temperature regime where multilayer silicene has been claimed to form (470-500 K), a good agreement is found with AES intensity variations and STM measurements within a Ag surfactant mediated growth, whereas a model with multilayer silicene growth fails to reproduce the AES measurements.

Silicene and germanene on InSe substrates: structures and tunable electronic properties

The tunable electronic properties of Si/InSe and Ge/InSe HLs by applying an external electric field or strain.

Epitaxial growth and physical properties of 2D materials beyond graphene: from monatomic materials to binary compounds

This review highlights the recent advances of epitaxial growth of 2D materials beyond graphene.

Silicene: A Promising Anode for Lithium-Ion Batteries

Silicene, a single-layer-thick silicon nanosheet with a honeycomb structure, is successfully fabricated by the molecular-beam-epitaxy (MBE) deposition method on metallic substrates and by the solid-state reaction method. Here, recent progress on the features of silicene that make it a prospective anode for lithium-ion batteries (LIBs) are discussed, including its charge-carrier mobility, chemical stability, and metal-silicene interactions. The electrochemical performance of silicene is reviewed in terms of both theoretical predictions and experimental measurements, and finally, its challenges and outlook are considered.

Intercalation of Si between MoS2 layers

We report a combined experimental and theoretical study of the growth of sub-monolayer amounts of silicon (Si) on molybdenum disulfide (MoS₂). At room temperature and low deposition rates we have found compelling evidence that the deposited Si atoms intercalate between the MoS₂ layers. Our evidence relies on several experimental observations: (1) Upon the deposition of Si on pristine MoS₂ the morphology of the surface transforms from a smooth surface to a hill-and-valley surface. The lattice constant of the hill-and-valley structure amounts to 3.16 Å, which is exactly the lattice constant of pristine MoS₂. (2) The transitions from hills to valleys are not abrupt, as one would expect for epitaxial islands growing on-top of a substrate, but very gradual. (3) I(V) scanning tunneling spectroscopy spectra recorded at the hills and valleys reveal no noteworthy differences. (4) Spatial maps of dI/dz reveal that the surface exhibits a uniform work function and a lattice constant of 3.16 Å. (5) X-ray photo-electron spectroscopy measurements reveal that sputtering of the MoS₂/Si substrate does not lead to a decrease, but an increase of the relative Si signal. Based on these experimental observations we have to conclude that deposited Si atoms do not reside on the MoS₂ surface, but rather intercalate between the MoS₂ layers. Our conclusion that Si intercalates upon the deposition on MoS₂ is at variance with the interpretation by Chiappe et al. (Adv. Mater.2014, 26, 2096-2101) that silicon forms a highly strained epitaxial layer on MoS₂. Finally, density functional theory calculations indicate that silicene clusters encapsulated by MoS₂ are stable.

Direct Evidence of Dirac Signature in Bilayer Germanene Islands on Cu(111)

Bernal-stacked bilayer germanene with a stable buckled honeycomb structure has been successfully synthesized on Cu(111). Structural and electronic characterizations as well as theoretical calculations unequivocally demonstrate for the first time the presence of a nearly linear energy dispersion in the vicinity of the Fermi energy, as expected of the Dirac signature for theoretical freestanding germanene.

Quasiparticle interference in unconventional 2D systems

At present, research of 2D systems mainly focuses on two kinds of materials: graphene-like materials and transition-metal dichalcogenides (TMDs). Both of them host unconventional 2D electronic properties: pseudospin and the associated chirality of electrons in graphene-like materials, and spin-valley-coupled electronic structures in the TMDs. These exotic electronic properties have attracted tremendous interest for possible applications in nanodevices in the future. Investigation on the quasiparticle interference (QPI) in 2D systems is an effective way to uncover these properties. In this review, we will begin with a brief introduction to 2D systems, including their atomic structures and electronic bands. Then, we will discuss the formation of Friedel oscillation due to QPI in constant energy contours of electron bands, and show the basic concept of Fourier-transform scanning tunneling microscopy/spectroscopy (FT-STM/STS), which can resolve Friedel oscillation patterns in real space and consequently obtain the QPI patterns in reciprocal space. In the next two parts, we will summarize some pivotal results in the investigation of QPI in graphene and silicene, in which systems the low-energy quasiparticles are described by the massless Dirac equation. The FT-STM experiments show there are two different interference channels (intervalley and intravalley scattering) and backscattering suppression, which associate with the Dirac cones and the chirality of quasiparticles. The monolayer and bilayer graphene on different substrates (SiC and metal surfaces), and the monolayer and multilayer silicene on a Ag(1 1 1) surface will be addressed. The fifth part will introduce the FT-STM research on QPI in TMDs (monolayer and bilayer of WSe₂), which allow us to infer the spin texture of both conduction and valence bands, and present spin-valley coupling by tracking allowed and forbidden scattering channels.

Compelling experimental evidence of a Dirac cone in the electronic structure of a 2D Silicon layer

The remarkable properties of graphene stem from its two-dimensional (2D) structure, with a linear dispersion of the electronic states at the corners of the Brillouin zone (BZ) forming a Dirac cone. Since then, other 2D materials have been suggested based on boron, silicon, germanium, phosphorus, tin, and metal di-chalcogenides. Here, we present an experimental investigation of a single silicon layer on Au(111) using low energy electron diffraction (LEED), high resolution angle-resolved photoemission spectroscopy (HR-ARPES), and scanning tunneling microscopy (STM). The HR-ARPES data show compelling evidence that the silicon based 2D overlayer is responsible for the observed linear dispersed feature in the valence band, with a Fermi velocity of comparable to that of graphene. The STM images show extended and homogeneous domains, offering a viable route to the fabrication of silicene-based opto-electronic devices.

Electronic States of Silicene Allotropes on Ag(111)

Silicene, a honeycomb lattice of silicon, presents a particular case of allotropism on Ag(111). Silicene forms multiple structures with alike in-plane geometry but different out-of-plane atomic buckling and registry to the substrate. Angle-resolved photoemission and first-principles calculations show that these silicene structures, with (4×4), (√13×√13)R13.9°, and (2√3×2√3)R30° lattice periodicity, display similar electronic bands despite the structural differences. In all cases the interaction with the substrate modifies the electronic states, which significantly differ from those of free-standing silicene. Complex photoemission patterns arise from surface umklapp processes, varying according to the periodicity of the silicene allotropes.