Dimensionality-Driven Metal-Insulator Transition in Spin-Orbit-Coupled SrIrO_{3}

Shot Noise in a Metal Close to the Mott Transition

SrIrO3 is a metallic complex oxide with unusual electronic and magnetic properties believed to originate from electron correlations due to its proximity to the Mott metal-insulator transition. However, the nature of its electronic state and the mechanism of metallic conduction remain poorly understood. We demonstrate that the shot noise produced by nanoscale SrIrO3 junctions is strongly suppressed, inconsistent with diffusive quasiparticle transport. Analysis of thermal effects and scaling with the junction length reveals that conduction is mediated by collective hopping of electrons almost localized by correlations. Our results provide insight into the non-Fermi liquid state close to the Mott transition and advance shot noise measurements as a powerful technique for the study of quantum materials.

Selective Control of Electric Charge of Weyl Fermions in Pyrochlore Iridates

Weyl fermions can exhibit exotic phenomena due to their magnetic charge in momentum space, while Weyl nodes are usually located away from Fermi energy, which forms electron or hole pockets as the electric charges. Previous studies have mostly focused on the magnetic charge, however, the electric charges are rarely explored. Here, the intriguing Hall responses arising from the interplay between magnetic and electric charges of Weyl fermions in pyrochlore iridates are reported. Explicitly, unexpected linear scaling is observed between the anomalous Hall conductivity and Hall carrier density in strained Nd2Ir2O7 thin films, and its slope shows a sign change approaching the Néel temperature of Nd. Theoretical calculations unveil that the cluster magnetic multipoles induce local energy inversion of Weyl nodes, which alters the electric charge of Weyl fermions and accounts for the observed nontrivial Hall responses. Moreover, the correlation between the magnetic and electric charges is further probed by voltage-controlled hydrogenation, which leads to the suppression of the anomalous Hall effect through electron filling. This work not only reveals the essential role of the both magnetic and electric charges of Weyl fermions, but also demonstrates the hydrogenation as an effective tuning knob in exploring correlated topological properties.

Momentum-space spin texture induced by strain gradient in nominally centrosymmetric SrIrO3 films

Spin texture in k-space is a consequence of spin splitting due to strong spin-orbit coupling and inversion symmetry breaking. It underlies fertile spin transport phenomena and is of crucial importance for spintronics. Here, we observe the spin texture in k-space of nominally centrosymmetric SrIrO3 grown on NdGaO3 (110) substrates, using non-linear magnetotransport measurements. We demonstrate that the spin texture is not only induced by the interface, which inherently breaks the inversion symmetry in strong spin-orbit coupled SrIrO3 films, but also originates from the film bulk. Structural analysis reveals that thicker SrIrO3 films exhibit a strain gradient, which could be considered as a continuous change in the lattice constant across different layers and breaks the inversion symmetry throughout the entire SrIrO3 films, giving rise to the spin texture in k-space. First-principles calculations reveal that the strain gradient creates large spin-splitting bands, inducing the spin texture with anisotropy, which is consistent with our experimental observations. Our results offer an efficient method for inducing the spin textures in k-space.

High-energy photoemission final states beyond the free-electron approximation

Three-dimensional (3D) electronic band structure is fundamental for understanding a vast diversity of physical phenomena in solid-state systems, including topological phases, interlayer interactions in van der Waals materials, dimensionality-driven phase transitions, etc. Interpretation of ARPES data in terms of 3D electron dispersions is commonly based on the free-electron approximation for the photoemission final states. Our soft-X-ray ARPES data on Ag metal reveals, however, that even at high excitation energies the final states can be a way more complex, incorporating several Bloch waves with different out-of-plane momenta. Such multiband final states manifest themselves as a complex structure and added broadening of the spectral peaks from 3D electron states. We analyse the origins of this phenomenon, and trace it to other materials such as Si and GaN. Our findings are essential for accurate determination of the 3D band structure over a wide range of materials and excitation energies in the ARPES experiment.

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO₃ is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO₃ . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

Controllable Itinerant Ferromagnetism in Weakly Correlated 5d SrIrO3

The weakly correlated nature of 5d oxide SrIrO₃ determines its rare ferromagnetism, and the control of its magnetic order is even less studied. Tailoring structure distortion is currently a main route to tune the magnetic order of 5d iridates, but only for the spatially confined insulating counterparts. Here, we have realized ferromagnetic order in metallic SrIrO₃ by construction of SrIrO₃/ferromagnetic-insulator (LaCoO₃) superlattices, which reveal a giant coercivity of ∼10 T and saturation field of ∼25 T with strong perpendicular magnetic anisotropy. The Curie temperature of SrIrO₃ can be controlled by engineering interface charge transfer, which is confirmed by Hall effect measurements collaborating with EELS and XAS. Besides, the noncoplanar spin texture is captured, which is caused by interfacial Dzyaloshinskii-Moriya interactions as well. These results indicate controllable itinerant ferromagnetism and an emergent topological magnetic state in strong spin-orbit coupled semimetal SrIrO₃, showing great potential to develop efficient spintronic devices.

Interfacial charge transfer induced antiferromagnetic metals and magnetic phase transition in (CrO2)m/(TaO2)nsuperlattices

As a class of remarkable spintronic materials, intrinsic antiferromagnetic (AFM) metals are rare. The exploration and investigation of AFM metals are still in its infancy. Based on first-principles calculations, the interface-induced magnetic phenomena in the (CrO₂)_m/(TaO₂)_nsuperlattices are investigated, and a new series of AFM metals is predicted. Under different ratios ofm:nwith varying valence states of Cr, the (CrO₂)_m/(TaO₂)_nsuperlattices exhibit three different phases, including the AFM metal, the AFM semiconductor, and the ferromagnetic (FM) metal. In the AFM semiconducting phases, theintra-CrO₂-monolayer magnetic exchange interaction is systematically discussed, corresponding tom = 1 orm = 2. Both the localization of the Cr 3 dorbitals and the crystal-field splitting are crucial for magnetic ordering in super-exchange interactions. Based on the analyses of the AFM semiconducting phases withm = 1 andm = 2, the mechanisms of AFM metallic phases with radios ofm:n<1/2and1/2<m:n<1/1are discussed in detail. Additionally, the AFM metallic superlattices can be tuned into a FM metallic phase by applying strain in thec-direction, such as a compression of 7% in the (CrO₂)₁/(TaO₂)₃superlattice, and a tensile strain of 7% in the (CrO₂)₂/(TaO₂)₃superlattice. The phase diagram of the (CrO₂)_m/(TaO₂)_nsuperlattices is obtained as a function of the layer thickness. This work provides new insights about realizing and manipulating AFM metals in artificial superlattices or heterostructures in experiments.

Direct Observation of Strong Anomalous Hall Effect and Proximity-Induced Ferromagnetic State in SrIrO3

The 5d iridium-based transition metal oxides have gained broad interest because of their strong spin-orbit coupling, which favors new or exotic quantum electronic states. On the other hand, they rarely exhibit more mainstream orders like ferromagnetism due to generally weak electron-electron correlation strength. Here, a proximity-induced ferromagnetic (FM) state with T_C  ≈ 100 K and strong magnetocrystalline anisotropy is shown in a SrIrO₃ (SIO) heterostructure via interfacial charge transfer by using a ferromagnetic insulator in contact with SIO. Electrical transport allows to selectively probe the FM state of the SIO layer and the direct observation of a strong, intrinsic, and positive anomalous Hall effect (AHE). For T ≤ 20 K, the AHE displays unusually large coercive and saturation field, a fingerprint of a strong pseudospin-lattice coupling. A Hall angle, σ_xy ^AHE /σ_{xx ,} larger by an order of magnitude than in typical 3d metals and an FM net moment of about 0.1 μ_B /Ir, is reported. This emphasizes how efficiently the nontrivial topological band properties of SIO can be manipulated by structural modifications and the exchange interaction with 3d TMOs.

Interfacial charge transfer and persistent metallicity of ultrathin SrIrO3/SrRuO3 heterostructures

Interface quantum materials have yielded a plethora of previously unknown phenomena, including unconventional superconductivity, topological phases, and possible Majorana fermions. Typically, such states are detected at the interface between two insulating constituents by electrical transport, but whether either material is conducting, transport techniques become insensitive to interfacial properties. To overcome these limitations, we use angle-resolved photoemission spectroscopy and molecular beam epitaxy to reveal the electronic structure, charge transfer, doping profile, and carrier effective masses in a layer-by-layer fashion for the interface between the Dirac nodal-line semimetal SrIrO₃ and the correlated metallic Weyl ferromagnet SrRuO₃. We find that electrons are transferred from the SrIrO₃ to SrRuO₃, with an estimated screening length of λ = 3.2 ± 0.1 Å. In addition, we find that metallicity is preserved even down to a single SrIrO₃ layer, where the dimensionality-driven metal-insulator transition typically observed in SrIrO₃ is avoided because of strong hybridization of the Ir and Ru t_2g states.

Observation of metallic electronic structure in a single-atomic-layer oxide

Correlated electrons in transition metal oxides exhibit a variety of emergent phases. When transition metal oxides are confined to a single-atomic-layer thickness, experiments so far have shown that they usually lose diverse properties and become insulators. In an attempt to extend the range of electronic phases of the single-atomic-layer oxide, we search for a metallic phase in a monolayer-thick epitaxial SrRuO3 film. Combining atomic-scale epitaxy and angle-resolved photoemission measurements, we show that the monolayer SrRuO3 is a strongly correlated metal. Systematic investigation reveals that the interplay between dimensionality and electronic correlation makes the monolayer SrRuO3 an incoherent metal with orbital-selective correlation. Furthermore, the unique electronic phase of the monolayer SrRuO3 is found to be highly tunable, as charge modulation demonstrates an incoherent-to-coherent crossover of the two-dimensional metal. Our work emphasizes the potentially rich phases of single-atomic-layer oxides and provides a guide to the manipulation of their two-dimensional correlated electron systems.

Generation of 2D nonlayered ferromagnetic VO2(M) nanosheets induced by strain engineering of CO2

Two-dimensional (2D) nonlayered ferromagnets displaying high Curie temperatures, sizable magnetic anisotropy levels, and large spin polarizations are emerging as promising 2D ferromagnetics. However, the difficulties in synthesizing 2D nonlayered intrinsic ferromagnets have largely limited their development. Herein, defect-rich 2D nonlayered VO₂(M) nanosheets have been fabricated by deploying straining engineering of CO₂ on the metal-insulator transition (MIT) of VO₂. Above T_MIT, the strong strain engineering of CO₂ in the R phase of VO₂ generated a very large number of atomic defects in its 3D crystal structure, and as a result facilitated conversion of the defective 3D network to 2D nanosheets along the c-axis. The as-prepared 2D defective VO₂(M) nanosheets displayed unique room-temperature ferromagnetism, attributed to the symmetry breaking triggered by the disordered atomic structure combined with the 3D-to-2D transformation.

Spin-orbit effects in pentavalent iridates: models and materials

Spin-orbit effects in heavy 5dtransition metal oxides, in particular, iridates, have received enormous current interest due to the prediction as well as the realization of a plethora of exotic and unconventional magnetic properties. While a bulk of these works are based on tetravalent iridates (d⁵), where the counter-intuitive insulating state of the rather extended 5dorbitals are explained by invoking strong spin-orbit coupling, the recent quest in iridate research has shifted to the other valencies of Ir, of which pentavalent iridates constitute a notable representative. In contrast to the tetravalent iridates, spin-orbit entangled electrons ind⁴systems are expected to be confined to theJ= 0 singlet state without any resultant moment or magnetic response. However, it has been recently predicted that, magnetism ind⁴systems may occur via magnetic condensation of excitations across spin-orbit-coupled states. In reality, the magnetism in Ir⁵⁺systems are often quite debatable both from theoretical as well as experimental point of view. Here we provide a comprehensive overview of the spin-orbit coupledd⁴model systems and its implications in the studied pentavalent iridates. In particular, we review here the current experimental and theoretical understanding of the double perovskite (A₂BYIrO₆,A= Sr, Ba,B= Y, Sc, Gd), 6H-perovskite (Ba₃MIr₂O₉,M= Zn, Mg, Sr, Ca), post-perovskite (NaIrO₃), and hexagonal (Sr₃MIrO₆) iridates, along with a number of open questions that require future investigation.

Electronic band structure of iridates

In this review, an attempt has been made to compare the electronic structures of various 5d iridates (iridium oxides), with an effort to note the common features and differences. Both experimental studies, especially angle-resolved photoemission spectroscopy (ARPES) results, and first-principles band structure calculations have been discussed. This brings to focus the fact that the electronic structures and magnetic properties of the high-Z 5d transition iridates depend on the intricate interplay of strong electron correlation, strong (relativistic) spin-orbit coupling, lattice distortion, and the dimensionality of the system. For example, in the thin film limit, SrIrO₃ exhibits a metal-insulator transition that corresponds to the dimensionality crossover, with the band structure resembling that of bulk Sr₂IrO₄.

Large intrinsic anomalous Hall effect in SrIrO3 induced by magnetic proximity effect

The anomalous Hall effect (AHE) is an intriguing transport phenomenon occurring typically in ferromagnets as a consequence of broken time reversal symmetry and spin-orbit interaction. It can be caused by two microscopically distinct mechanisms, namely, by skew or side-jump scattering due to chiral features of the disorder scattering, or by an intrinsic contribution directly linked to the topological properties of the Bloch states. Here we show that the AHE can be artificially engineered in materials in which it is originally absent by combining the effects of symmetry breaking, spin orbit interaction and proximity-induced magnetism. In particular, we find a strikingly large AHE that emerges at the interface between a ferromagnetic manganite (La_0.7Sr_0.3MnO₃) and a semimetallic iridate (SrIrO₃). It is intrinsic and originates in the proximity-induced magnetism present in the narrow bands of strong spin-orbit coupling material SrIrO₃, which yields values of anomalous Hall conductivity and Hall angle as high as those observed in bulk transition-metal ferromagnets. These results demonstrate the interplay between correlated electron physics and topological phenomena at interfaces between 3d ferromagnets and strong spin-orbit coupling 5d oxides and trace an exciting path towards future topological spintronics at oxide interfaces.

Angle, Spin, and Depth Resolved Photoelectron Spectroscopy on Quantum Materials

The role of X-ray based electron spectroscopies in determining chemical, electronic, and magnetic properties of solids has been well-known for several decades. A powerful approach is angle-resolved photoelectron spectroscopy, whereby the kinetic energy and angle of photoelectrons emitted from a sample surface are measured. This provides a direct measurement of the electronic band structure of crystalline solids. Moreover, it yields powerful insights into the electronic interactions at play within a material and into the control of spin, charge, and orbital degrees of freedom, central pillars of future solid state science. With strong recent focus on research of lower-dimensional materials and modified electronic behavior at surfaces and interfaces, angle-resolved photoelectron spectroscopy has become a core technique in the study of quantum materials. In this review, we provide an introduction to the technique. Through examples from several topical materials systems, including topological insulators, transition metal dichalcogenides, and transition metal oxides, we highlight the types of information which can be obtained. We show how the combination of angle, spin, time, and depth-resolved experiments are able to reveal "hidden" spectral features, connected to semiconducting, metallic and magnetic properties of solids, as well as underlining the importance of dimensional effects in quantum materials.

Spatially Controlled Octahedral Rotations and Metal-Insulator Transitions in Nickelate Superlattices

The properties of correlated oxides can be manipulated by forming short-period superlattices since the layer thicknesses are comparable with the typical length scales of the involved correlations and interface effects. Herein, we studied the metal-insulator transitions (MITs) in tetragonal NdNiO₃/SrTiO₃ superlattices by controlling the NdNiO₃ layer thickness, n in the unit cell, spanning the length scale of the interfacial octahedral coupling. Scanning transmission electron microscopy reveals a crossover from a modulated octahedral superstructure at n = 8 to a uniform nontilt pattern at n = 4, accompanied by a drastically weakened insulating ground state. Upon further reducing n the predominant dimensionality effect continuously raises the MIT temperature, while leaving the antiferromagnetic transition temperature unaltered down to n = 2. Remarkably, the MIT can be enhanced by imposing a sufficiently large strain even with strongly suppressed octahedral rotations. Our results demonstrate the relevance for the control of oxide functionalities at reduced dimensions.

Misfit Relaxation Mechanisms and Domain Ordering in Anisotropically Strained Manganite Thin Films

The evolution of anisotropic strain in epitaxial Pr_0.5Sr_0.5MnO₃ films grown on (LaAlO₃)_0.3(SrAl_0.5Ta_0.5O₃)_0.7(110) substrates has been characterized by off-specular X-ray reciprocal space mappings on the (130), (310), (222), and (222̅) reflections in the scattering zone containing the [110] axis. We demonstrate that a multistage hierarchical structural evolution (single-domain-like structure, domain ordering, twin domains, and/or periodic structural modulations) occurs as the film thickness increases, and the structural modulation between the two transverse in-plane [11̅0] and [001] directions is quite different due to the monoclinic distortion of the film. We then show the relationship between the distribution of diffraction spots in reciprocal space and their corresponding domain configurations in real space under various thicknesses, which is closely correlated with thickness-dependent magnetic and magnetotransport properties. More importantly, the distribution and annihilation dynamics of the domain ordering are imaged utilizing home-built magnetic force microscope, revealing that the structural domains tilted toward either the [001] or [001̅] direction are arranged along the [11̅1] and [1̅11] crystal orientations. The direct visualization and dynamics of anisotropic-strain-related domain ordering will open a new path toward the control and manipulation of domain engineering in strongly correlated perovskite oxide films.

Anomalous pressure dependence of the electronic transport and anisotropy in SrIrO3films

Iridate oxides display exotic physical properties that arise from the interplay between a large spin-orbit coupling and electron correlations. Here, we present a comprehensive study of the effects of hydrostatic pressure on the electronic transport properties of SrIrO3(SIO), a system that has recently attracted a lot of attention as potential correlated Dirac semimetal. Our investigations on untwinned thin films of SIO reveal that the electrical resistivity of this material is intrinsically anisotropic and controlled by the orthorhombic distortion of the perovskite unit cell. These effects provide another evidence for the strong coupling between the electronic and lattice degrees of freedom in this class of compounds. Upon increasing pressure, a systematic increase of the transport anisotropies is observed. The anomalous pressure-induced changes of the resistivity cannot be accounted for by the pressure dependence of the density of the electron charge carriers, as inferred from Hall effect measurements. Moreover, pressure-induced rotations of the IrO6octahedra likely occur within the distorted perovskite unit cell and affect electron mobility of this system.

Coupling Lattice Instabilities Across the Interface in Ultrathin Oxide Heterostructures

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with distinct lattice symmetries. Here, we determine the effect of the cubic-tetragonal distortion of SrTiO3 on the electronic properties of thin films of SrIrO3, a topological crystalline metal hosting a delicate interplay between spin-orbit coupling and electronic correlations. We demonstrate that below the transition temperature at 105 K, SrIrO3 orthorhombic domains couple directly to tetragonal domains in SrTiO3. This forces the in-phase rotational axis to lie in-plane and creates a binary domain structure in the SrIrO3 film. The close proximity to the metal-insulator transition in ultrathin SrIrO3 causes the individual domains to have strongly anisotropic transport properties, driven by a reduction of bandwidth along the in-phase axis. The strong structure-property relationships in perovskites make these compounds particularly suitable for static and dynamic coupling at interfaces, providing a promising route towards realizing novel functionalities in oxide heterostructures.

Interface Engineered Room-Temperature Ferromagnetic Insulating State in Ultrathin Manganite Films

Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room-temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X-ray photoemission spectroscopy, O K-edge X-ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.

Anomalous magnetoresistance due to longitudinal spin fluctuations in a Jeff = 1/2 Mott semiconductor

As a hallmark of electronic correlation, spin-charge interplay underlies many emergent phenomena in doped Mott insulators, such as high-temperature superconductivity, whereas the half-filled parent state is usually electronically frozen with an antiferromagnetic order that resists external control. We report on the observation of a positive magnetoresistance that probes the staggered susceptibility of a pseudospin-half square-lattice Mott insulator built as an artificial SrIrO₃/SrTiO₃ superlattice. Its size is particularly large in the high-temperature insulating paramagnetic phase near the Néel transition. This magnetoresistance originates from a collective charge response to the large longitudinal spin fluctuations under a linear coupling between the external magnetic field and the staggered magnetization enabled by strong spin-orbit interaction. Our results demonstrate a magnetic control of the binding energy of the fluctuating particle-hole pairs in the Slater-Mott crossover regime analogous to the Bardeen-Cooper-Schrieffer-to-Bose-Einstein condensation crossover of ultracold-superfluids.

Spin-charge interactions are at the core of electronic correlation phenomena in Mott insulators. Here, the authors observe a positive anomalous magnetoresistance in a SrIrO₃/SrTiO₃ superlattice, indicative of strong spin-charge fluctuations in this pseudospin-half square-lattice Mott insulator.

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition-metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO₃ We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO₃ arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO₃ through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO₃ with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics.

Metal-to-Insulator Transition in Ultrathin Manganite Heterostructures

Thickness-driven phase transitions have been widely observed in many correlated transition metal oxides materials. One of the important topics is the thickness-driven metal to insulator transition in half-metal La2/3Sr1/3MnO3 (LSMO) thin films, which has attracted great attention in the past few decades. In this article, we review research on the nature of the metal-to-insulator (MIT) transition in LSMO ultrathin films. We discuss in detail the proposed mechanisms, the progress made up to date, and the key issues existing in understanding the related MIT. We also discuss MIT in other correlated oxide materials as a comparison that also has some implications for understanding the origin of MIT.

Growth facets of SrIrO3 thin films and single crystals

The crystallographic orientation of SrIrO₃ surfaces is decisive for the occurrence of topological surface states.

Nodal-chain network, intersecting nodal rings and triple points coexisting in nonsymmorphic Ba3Si4

Coexistence of topological elements in topological metals/semimetals (TMs) has gradually attracted attention. However, non-topological factors always interfere with the Fermi surface and cover interesting topological properties. Here, we find that Ba3Si4 is a "clean" TM which contains coexisting nodal-chain networks, intersecting nodal rings (INRs) and triple points, in the absence of spin-orbit coupling (SOC). Moreover, the nodal rings in the topological phase exhibit diverse types: from type-I and type-II to type-III rings according to band dispersions. All of the topological elements are generated by crossings of three energy bands, and thus they are correlated rather than mutually independent. When some structural symmetries are eliminated by an external strain, the topological phase evolves into another phase including a Hopf link, a one-dimensional nodal chain and new INRs.

Spin-Orbit Semimetal SrIrO_{3} in the Two-Dimensional Limit

We investigate the thickness-dependent electronic properties of ultrathin SrIrO_{3} and discover a transition from a semimetallic to a correlated insulating state below 4 unit cells. Low-temperature magnetoconductance measurements show that spin fluctuations in the semimetallic state are significantly enhanced while approaching the transition point. The electronic properties are further studied by scanning tunneling spectroscopy, showing that 4 unit cell SrIrO_{3} is on the verge of a gap opening. Our density functional theory calculations reproduce the critical thickness of the transition and show that the opening of a gap in ultrathin SrIrO_{3} requires antiferromagnetic order.