Hopping exponential band tails

Extremely Non-Equilibrium Hopping Transport and Photogeneration Efficiency in Organic Semiconductors: An Analytic Approach

An analytical model of highly nonequilibrium hopping transport of charge carriers in disordered organic semiconductors has been developed. In particular, the initial time interval is considered when transport is controlled by hops down in energy. The model is applied to the calculation of the separation probability of geminate pairs in a semiconductor with a Gaussian energy distribution of localized states. This probability determines the photogeneration efficiency. The temperature dependence of the separation probability is obtained and shown to be much weaker than predicted by the classical Onsager model, in agreement with experiment and Monte Carlo simulations. The field dependence is taken into account using a modified effective temperature method.

A model analysis of centimeter-long electron transport in cable bacteria

The recent discovery of cable bacteria has greatly expanded the known length scale of biological electron transport, as these multi-cellular bacteria are capable of mediating electrical currents across centimeter-scale distances. To enable such long-range conduction, cable bacteria embed a network of regularly spaced, parallel protein fibers in their cell envelope. These fibers exhibit extraordinary electrical properties for a biological material, including an electrical conductivity that can exceed 100 S cm-1. Traditionally, long-range electron transport through proteins is described as a multi-step hopping process, in which the individual hopping steps are described by Marcus electron transport theory. Here, we investigate to what extent such a classical hopping model can explain the conductance data recorded for individual cable bacterium filaments. To this end, the conductive fiber network in cable bacteria is modelled as a set of parallel one-dimensional hopping chains. Comparison of model simulated and experimental current(I)/voltage(V) curves, reveals that the charge transport is field-driven rather than concentration-driven, and there is no significant injection barrier between electrodes and filaments. However, the observed high conductivity levels (>100 S cm-1) can only be reproduced, if we include much longer hopping distances (a > 10 nm) and lower reorganisation energies (λ < 0.2 eV) than conventionally used in electron relay models of protein structures. Overall, our model analysis suggests that the conduction mechanism in cable bacteria is markedly distinct from other known forms of long-range biological electron transport, such as in multi-heme cytochromes.

Influence of Volatile Organic Compound Adsorption on the Characteristics of Organic Field-Effect Transistors and Rules for Gas-Sensing Measurements

Owing to the advantages of organic field-effect transistors (OFETs) in the versatility of organic synthesis, multiparameter measurement, and signal amplification, sensors based on OFETs have received increasing attention for detecting volatile organic compounds (VOCs). However, false device operation and gas-sensing measurements often occur to vitiate the advantages of OFETs and even output error gas-sensing signals. In this work, by experimentally and theoretically studying the effects of VOC adsorption on the operational characteristics of the OFET, the proper operations of OFETs in gas-sensing measurements were clarified. The multiparameter measurements of OFETs showed that the source-drain current was the optimized parameter for achieving high responsivity, and other OFET parameters could be used for fingerprint analysis. By operating OFETs in the near-threshold region, the amplification effect was switched to enhance the responsivity by orders of magnitude to VOCs, while in the overthreshold region, the OFETs had a low signal-to-noise ratio. Besides, a counteraction effect and an uncertainty effect were discovered, leading to error gas-sensing signals. A theoretical study was carried out to reveal the dependency of the gas-sensing properties of OFETs on VOC adsorption. A series of rules were proposed for guiding the measurements of OFET sensors by taking full advantage of transistors in gas-sensing applications.

Disorder and Photogeneration Efficiency in Organic Semiconductors

An analytical description of the separation probability of a geminate pair in organic semiconductors is given. The initial diffusion of "hot" twins is anomalously strong due to energy disorder. This circumstance significantly increases the photogeneration quantum yield at low temperatures and weakens its temperature dependence relative to predictions of the Onsager model, in agreement with Monte Carlo and experimental results.

A Novel Method to Analyze the Relationship between Thermoelectric Coefficient and Energy Disorder of Any Density of States in an Organic Semiconductor

In this work, a unified method is proposed for analyzing the relationship between the Seebeck coefficient and the energy disorder of organic semiconductors at any multi-parameter density of states (DOS) to study carrier transport in disordered thermoelectric organic semiconductors and the physical meaning of improved DOS parameters. By introducing the Gibbs entropy, a new multi-parameter DOS and traditional Gaussian DOS are used to verify this method, and the simulated result of this method can well fit the experiment data obtained on three organic devices. In particular, the impact of DOS parameters on the Gibbs entropy can also influence the impact of the energy disorder on the Seebeck coefficient.

Novel Dark Current Reduction Strategy via Deep Bulk Traps for High-Performance Solution-Processed Organic Photodetectors

The performance improvement of the organic photodetectors (OPDs) focuses on suppressing the dark current density (J_d) to improve the specific detectivity. In this work, a dark current reduction strategy relying on constructing limited deep traps in the active layer to suppress charge injection rate was newly proposed. And an optimization method has been successfully demonstrated on the solution-processed OPDs accordingly. Compared with the J_d expressed by the OPD with the shallow trap system, the device with deep bulk traps exhibits a dramatically reduced dark current while ensuring high responsivity. At a bias of -2 V, the optimized photodiode with a J_d down to 1.4 × 10^-5 mA cm^-2 and a maximum responsivity of 0.42 A W^-1 @620 nm was realized, leading to a maximum detectivity calculated from shot noise of 6.23 × 10¹² Jones. This value is 49-fold higher than that of the original OPD with the same structure. The effects of deep traps inside the semiconductor film on injected carriers and photogenerated carriers are well explained by the relative positions of the initial hopping levels. A better understanding of charge transport regimes in OPD helps to open new approaches for constructing high-performance OPD toward practical applications.

Polymer Photoelectrodes for Solar Fuel Production: Progress and Challenges

Converting solar energy to fuels has attracted substantial interest over the past decades because it has the potential to sustainably meet the increasing global energy demand. However, achieving this potential requires significant technological advances. Polymer photoelectrodes are composed of earth-abundant elements, e.g. carbon, nitrogen, oxygen, hydrogen, which promise to be more economically sustainable than their inorganic counterparts. Furthermore, the electronic structure of polymer photoelectrodes can be more easily tuned to fit the solar spectrum than inorganic counterparts, promising a feasible practical application. As a fast-moving area, in particular, over the past ten years, we have witnessed an explosion of reports on polymer materials, including photoelectrodes, cocatalysts, device architectures, and fundamental understanding experimentally and theoretically, all of which have been detailed in this review. Furthermore, the prospects of this field are discussed to highlight the future development of polymer photoelectrodes.

Fine structure of thermoluminescence assisted by molecular vibrations in disordered organic semiconductors

The article deals with the issue of the influence of a separate mode of molecular vibrations on the formation of the thermoluminescence from disordered systems with quasi-continuous spectra of localized carriers. The contribution of vibrations is noticeable if the energy of their quanta is close to the depth of some localized carriers and the transition of the carrier into the conductive region occurs via absorption of these quanta. At some value of a carrier-vibration interaction, the effect manifests itself in the appearance of a fine discrete structure on the generally smooth thermoluminescence curve. The thermoluminescence of polymers is calculated using the model of non-adiabatic transitions, in which the carrier-vibrational interaction is determined by the displacements of nuclei in the presence of the carrier. The dependence of the arising discrete structure of the thermoluminescence curve on a number of parameters of the system like the magnitude of the carrier-vibration interaction, the width of vibrational levels, the parameters of the conductive region is investigated. The processes with participation of multiple quanta of vibrations are investigated and the formation of repetitive structures on the thermoluminescence curve has been shown owing to the absorption of several vibrational quanta. Analysis of a number of experiments is presented using the suggested theory.

Tuning Charge Transport in PVDF-Based Organic Ferroelectric Transistors: Status and Outlook

The use of polymer ferroelectric dielectrics in organic field-effect transistors (FETs) for nonvolatile memory application was demonstrated more than 15 years ago. The ferroelectric dielectric polyvinylidene fluoride (PVDF) and its copolymers are most widely used for such applications. In addition to memory applications, polymer ferroelectrics as a dielectric layer in organic FETs yield insights into interfacial transport properties. Advantages of polymer ferroelectric dielectrics are their high dielectric constant compared to other polymer dielectrics and their tunable dielectric constant with temperature. Further, the polarization strength may also be tuned by externally poling the ferroelectric dielectric layer. Thus, PVDF and its copolymers provide a unique testbed not just for investigating polarization induced transport in organic FETs, but also enhancing device performance. This article discusses recent developments of PVDF-based ferroelectric organic FETs and capacitors with a focus on tuning transport properties. It is shown that FET carrier mobilities exhibit a weak temperature dependence as long as the dielectric is in the ferroelectric phase, which is attributed to a polarization fluctuation driven process. The low carrier mobilities in PVDF-based FETs can be enhanced by tuning the poling condition of the dielectric. In particular, by using solution-processed small molecule semiconductors and other donor-acceptor copolymers, it is shown that selective poling of the PVDF-based dielectric layer dramatically improves FET properties. Finally, the prospects of further improvement in organic ferroelectric FETs and their challenges are provided.

Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate

This study aimed to investigate temperature dependencies at different injection currents (ICs) of the electroluminescence (EL) spectra from a green InGaN/GaN light-emitting diode (LED) based on multiple quantum wells (MQWs) grown on a Si substrate in a wide range of ICs (0.001–350 mA) and temperatures (6–350 K). The results show that the temperature-changing characteristic of the EL peak energy gradually evolves from an approximately V-shaped temperature dependence into a wave-shaped (three-step blueshift) dependence with increasing IC. Finally, it emerges as an approximately inverted V-shaped temperature dependence. The behavior reflects the fact that the emission related to InGaN is significantly influenced by the changing recombination dynamics of carriers with rising temperature or IC. This is attributed to the presence in the MQW active region of a stronger carrier localization effect across three zones with different average In contents. Moreover, with the decline of the temperature at lower ICs, the temperature behavior of the external quantum efficiency (EQE) value is dominated by the deactivated non-radiative centers. This phenomenon occurs not only in the higher temperature range but also at lower temperatures due to more In-content-induced structural defects, which are confirmed by measurements of the integrated EL intensity as well as the EQE dependence on IC.

A competitive hopping model for carrier transport in disordered organic semiconductors

Here, we formulate a theoretical transport model for disordered organic semiconductors based on the concept of competitive hopping. We demonstrate theoretically that carriers occupying states with higher energy levels have higher probabilities and higher rates of hopping to the transport energy. This model suggests a temperature (T) dependence of mobility (μ) given by lg(μ) ∝ T-n, where the low carrier density and small energetic disorder limitation of the competitive hopping model gives the non-Arrhenius lg(μ) ∝ T-2 relation, and the high carrier density and large energetic disorder limitation gives the Arrhenius type lg(μ) ∝ T-1 relation. The carrier density dependence of carrier mobility is steeper at high carrier density than at low carrier density. These results are well explained by the relative positions of the Fermi level and the equilibrium level as the initial hopping levels. The competitive hopping model successfully explains the trap energy dependence of the carrier mobility for systems with deep traps. The mobility enhancement with increasing trap energy at deep trapping situations can be explained by the increasing contribution to the carrier transport of the hopping between the intrinsic states.

Reduction of Charge Traps and Stability Enhancement in Solution-Processed Organic Field-Effect Transistors Based on a Blended n-Type Semiconductor

Solution-processed n-type organic field-effect transistors (OFETs) are essential elements for developing large-area, low-cost, and all organic logic/complementary circuits. Nonetheless, the development of air-stable n-type organic semiconductors (OSCs) lags behind their p-type counterparts. The trapping of electrons at the semiconductor-dielectric interface leads to a lower performance and operational stability. Herein, we report printed small-molecule n-type OFETs based on a blend with a binder polymer, which enhances the device stability due to the improvement of the semiconductor-dielectric interface quality and a self-encapsulation. Both combined effects prevent the fast deterioration of the OSC. Additionally, a complementary metal-oxide semiconductor-like inverter is fabricated depositing p-type and n-type OSCs simultaneously.

Intra- and inter-nanocrystal charge transport in nanocrystal films

The exploitation of semiconductor nanocrystal (NC) films in novel electronic and optoelectronic applications requires a better understanding of charge transport in these systems. Here, we develop a model of charge transport in NC films, based on a generalization of the concept of transport energy level ET to nanocrystal assemblies, which considers both intra- and inter-NC charge transfer processes. We conclude that the role played by each of these processes can be probed from temperature-dependent measurements of charge carrier density n and mobility μ in the same films. The model also enables the determination of the position of the Fermi energy level EF with respect to ET, an important parameter of charge transport in semiconductor materials, from the temperature dependence of n. Moreover, we provide support to an essentially temperature-independent intra-NC charge carrier mobility, considered in the transport level concept, and consequently the frequently observed temperature dependence of the overall mobility μ in NC films results from a temperature variation of the inter-NC charge transport processes. Importantly, we also conclude that the temperature dependence of conductivity in NC films should result in general from a combination of temperature variations of both n and μ. By applying the model to solution-processed Si NC films, we conclude that transport within each NC is similar to that in amorphous Si (a-Si), with charges hopping along band tail states located below the conduction band edge. For Si NCs, we obtain values of ET - EF of ∼0.25 eV. The overall mobility μ in Si NC films is significantly further reduced with respect to that typically found in a-Si due to the additional transport constraints imposed by inter-NC transfer processes inherent to a nanoparticulate film. Our model accounting for inter- and intra-NC charge transport processes provides a simple and more general description of charge transport that can be broadly applied to films of semiconductor NCs.

A review of carrier thermoelectric-transport theory in organic semiconductors

Carrier thermoelectric-transport theory has recently become of growing interest and numerous thermoelectric-transport models have been proposed for organic semiconductors, due to pressing current issues involving energy production and the environment. The purpose of this review is to provide a theoretical description of the thermoelectric Seebeck effect in organic semiconductors. Special attention is devoted to the carrier concentration, temperature, polaron effect and dipole effect dependence of the Seebeck effect and its relationship to hopping transport theory. Furthermore, various theoretical methods are used to discuss carrier thermoelectric transport. Finally, an outlook of the remaining challenges ahead for future theoretical research is provided.

Diffusion of a particle in the spatially correlated exponential random energy landscape: Transition from normal to anomalous diffusion

Diffusive transport of a particle in a spatially correlated random energy landscape having exponential density of states has been considered. We exactly calculate the diffusivity in the nondispersive quasi-equilibrium transport regime for the 1D transport model and found that for slow decaying correlation functions the diffusivity becomes singular at some particular temperature higher than the temperature of the transition to the true non-equilibrium dispersive transport regime. It means that the diffusion becomes anomalous and does not follow the usual ∝ t^1/2 law. In such situation, the fully developed non-equilibrium regime emerges in two stages: first, at some temperature there is the transition from the normal to anomalous diffusion, and then at lower temperature the average velocity for the infinite medium goes to zero, thus indicating the development of the true dispersive regime. Validity of the Einstein relation is discussed for the situation where the diffusivity does exist. We provide also some arguments in favor of conservation of the major features of the new transition scenario in higher dimensions.

Charge carrier relaxation in InGaAs-GaAs quantum wire modulation-doped heterostructures

The time dependencies of the carrier relaxation in modulation-doped InGaAs-GaAs low-dimensional structures with quantum wires have been studied as functions of temperature and light excitation levels. The photoconductivity (PC) relaxation follows a stretched exponent with decay constant, which depends on the morphology of InGaAs epitaxial layers, presence of deep traps, and energy disorder due to inhomogeneous distribution of size and composition. A hopping model, where electron tunnels between bands of localized states, gives appropriate interpretation for temperature-independent PC decay across the temperature range 150-290 K. At low temperatures (T < 150 K), multiple trapping-retrapping via 1D states of InGaAs quantum wires (QWRs), sub-bands of two-dimensional electron gas of modulation-doped n-GaAs spacers, as well as defect states in the GaAs environment are the dominant relaxation mechanism. The PC and photoluminescence transients for samples with different morphologies of the InGaAs nanostructures are compared. The relaxation rates are found to be largely dependent on energy disorder due to inhomogeneous distribution of strain, nanostructure size and composition, and piezoelectric fields in and around nanostructures, which have a strong impact on efficiency of carrier exchange between bands of the InGaAs QWRs, GaAs spacers, or wetting layers; presence of local electric fields; and deep traps.

Strong Photoluminescence Enhancement of Silicon Oxycarbide through Defect Engineering

The following study focuses on the photoluminescence (PL) enhancement of chemically synthesized silicon oxycarbide (SiC_xO_y) thin films and nanowires through defect engineering via post-deposition passivation treatments. SiC_xO_y materials were deposited via thermal chemical vapor deposition (TCVD), and exhibit strong white light emission at room-temperature. Post-deposition passivation treatments were carried out using oxygen, nitrogen, and forming gas (FG, 5% H₂, 95% N₂) ambients, modifying the observed white light emission. The observed white luminescence was found to be inversely related to the carbonyl (C=O) bond density present in the films. The peak-to-peak PL was enhanced ~18 and ~17 times for, respectively, the two SiC_xO_y matrices, oxygen-rich and carbon-rich SiC_xO_y, via post-deposition passivations. Through a combinational and systematic Fourier transform infrared spectroscopy (FTIR) and PL study, it was revealed that proper tailoring of the passivations reduces the carbonyl bond density by a factor of ~2.2, corresponding to a PL enhancement of ~50 times. Furthermore, the temperature-dependent and temperature-dependent time resolved PL (TDPL and TD-TRPL) behaviors of the nitrogen and forming gas passivated SiC_xO_y thin films were investigated to acquire further insight into the ramifications of the passivation on the carbonyl/dangling bond density and PL yield.

Hopping charge transport in amorphous semiconductors with the spatially correlated exponential density of states

Hopping charge transport in amorphous semiconductors having spatially correlated exponential density of states has been considered. Average carrier velocity is exactly calculated for the quasi-equilibrium (nondispersive) transport regime. We suggest also a heuristic approach for the consideration of the carrier velocity for the non-equilibrium dispersive regime.

Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode

We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.

Understanding the dependence of transport parameters on carrier concentration within a Gaussian density of states in molecular organic semiconductors

We study charge transport in molecular organic semiconductors using two terminal and three terminal field effect transistor devices. Using phthalocyanines as examples, we achieve unification of carrier mobility between the different configurations in a Gaussian density of states. We find that the current density-voltage characteristics for two terminal devices can be understood by introducing a concentration dependence of the carrier mobility, as described by Oelerich et al (2012 Phys. Rev. Lett. 108 226403, 2010 Appl. Phys. Lett. 97 143302). Studying the evolution of the activation energy with the carrier density, we find results consistent with a percolation picture and a density dependent transport energy.

Effective Temperature and Universal Conductivity Scaling in Organic Semiconductors

We investigate the scalability of the temperature- and electric field-dependence of the conductivity of disordered organic semiconductors to ‘universal’ curves by two different but commonly employed methods; by so-called universal scaling and by using the effective temperature concept. Experimentally both scaling methods were found to be equally applicable to the out-of-plane charge transport in PEDOT:PSS thin films of various compositions. Both methods are shown to be equivalent in terms of functional dependence and to have identical limiting behavior. The experimentally observed scaling behavior can be reproduced by a numerical nearest-neighbor hopping model, accounting for the Coulomb interaction, the high charge carrier concentration and the energetic disorder. The underlying physics can be captured in a simple empirical model, describing the effective temperature of the charge carrier distribution as the outcome of a heat balance between Joule heating and (effective) temperature-dependent energy loss to the lattice.

Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition

Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.

Theoretical tools for the description of charge transport in disordered organic semiconductors

Hopping conduction is widely considered the dominant charge transport mechanism in disordered organic semiconductors. Although theories of hopping transport have been developed in detail for applications to inorganic amorphous materials, these theories are often out of scope for the community working with organic amorphous systems. Theoretical research on charge transport in organic systems is overwhelmed by phenomenological fittings of numerical results by equations, which often make little physical sense. The aim of the current review is to bring analytical theoretical methods to the attention of the community working with disordered organic semiconductors.

Energy position of the transport path in disordered organic semiconductors

The concept of transport energy is the most transparent theoretical approach to describe hopping transport in disordered systems with steeply energy dependent density of states (DOS), in particular in organic semiconductors with Gaussian DOS. This concept allows one to treat hopping transport in the framework of a simple multiple-trapping model, replacing the mobility edge by a particular energy level called the transport energy. However, there is no consensus among researchers on the position of this transport level. In this article, we suggest a numerical procedure to find out the energy level most significantly contributing to charge transport in organic semiconductors. The procedure is based on studying the effects of DOS modifications on the charge carrier mobility in straightforward computer simulations. We also show why the most frequently visited energy, computed in several numerical studies to determine the transport energy, is not representative for charge transport.

Improved performance in diketopyrrolopyrrole-based transistors with bilayer gate dielectrics

There has been significant progress in the past 2 decades in the field of organic and polymer thin-film transistors. In this paper, we report a combination of stable materials, device architecture, and process conditions that resulted in a patterned gate, small channel length (<5 μm) device that possesses a scaled field-induced conductivity in air that is higher than any organic/polymer transistor reported thus far. The operating voltage is below 10 V; the on-off ratio is high; and the active materials are solution-processable. The semiconducting polymer is a new donor-acceptor polymer with furan-substituted diketopyrrolopyrrole and thienyl-vinylene-thienyl building blocks in the conjugated backbone. One of the major striking features of our work is that the patterned-gate device architecture is suitable for practical applications. We also propose a figure of merit to meaningfully compare polymer/organic transistor performance that takes into account mobility and operating voltage. With this figure of merit, we compare leading organic and polymer transistors that have been hitherto reported. The material and device architecture have shown very high mobility and low operating voltage for such short channel length (below 5 μm) organic/polymer transistors.

Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors

In this perspective article, we discuss the dynamic instability of charge carrier transport in a range of popular organic semiconductors. We observe that in many cases field-effect mobility, an important parameter used to characterize the performance of organic field-effect transistors (OFETs), strongly depends on the rate of the gate voltage sweep during the measurement. Some molecular systems are so dynamic that their nominal mobility can vary by more than one order of magnitude, depending on how fast the measurements are performed, making an assignment of a single mobility value to devices meaningless. It appears that dispersive transport in OFETs based on disordered semiconductors, those with a high density of localized trap states distributed over a wide energy range, is responsible for the gate voltage sweep rate dependence of nominal mobility. We compare such rate dependence in different materials and across different device architectures, including pristine and trap-dominated single-crystal OFETs, as well as solution-processed polycrystalline thin-film OFETs. The paramount significance given to a single mobility value in the organic electronics community and the practical importance of OFETs for applications thus suggest that such an issue, previously either overlooked or ignored, is in fact a very important point to consider when engaging in fundamental studies of charge carrier mobility in organic semiconductors or designing applied circuits with organic semiconductors.

Bias stress effect in "air-gap" organic field-effect transistors

The origin of the bias stress effect related only to semiconductor properties is investigated in "air-gap" organic field-effect transistors (OFETs) in the absence of a material gate dielectric. The effect becomes stronger as the density of trap states in the semiconductor increases. A theoretical model based on carrier trapping and relaxation in localized tail states is formulated. Polar molecular vapors in the gap of "air-gap" OFETs also have a significant impact on the bias stress effect via the formation of bound states between the charge carriers and molecular dipoles at the semiconductor surface.

Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells

Excitation power and temperature dependences of the photoluminescence (PL) spectra are studied in InGaN/GaN multiple quantum wells (MQWs). The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature. The anomalous temperature dependences of the peak energy and linewidth are well explained by the localized carrier hopping and thermalization process, and by the exponentially increased density of states with energy in the band tail. Moreover, it is also found that internal quantum efficiency is related to the mechanism conversion from nonradiative to radiative mechanism, and up to the carriers escaping from localized states.

Electron Time-of-Flight Measurements in Porous Silicon

Transient photocurrent measurements are reported in an electroluminescent porous silicon diode. Electron drift mobilities are obtained from the data as a function of temperature. Electron transport is dispersive, with a typical dispersion parameter α≈ 0.5. The range of mobilities is 10−5 − 10−4 cm2Vs between 225 K amd 400 K. This temperature-dependence is much less than expected for multiple-trapping models for dispersion, and suggests that a fractal structure causes the dispersion and the small mobilities.

Microstructural characterization and charge transport in thin films of conjugated polymers

The performance of semiconducting polymers has been steadily increasing in the last 20 years. Improved control over the microstructure of these materials and a deeper understanding of how the microstructure affects charge transport are partially responsible for such trend. The development and widespread use of techniques that allow to characterize the microstructure of semiconducting polymers is therefore instrumental for the advance of these materials. This article is a review of the characterization techniques that provide information used to enhance the understanding of structure/property relationships in semiconducting polymers. In particular, the applications of optical and X-ray spectroscopy, X-ray diffraction, and scanning probe techniques in this context are described.

The influence of hopping on modulated photoconductivity

We have developed equations taking into account both multiple-trapping and hopping processes for describing transport phenomena in disordered semiconductors. These equations have been introduced into a numerical simulation to model the steady state dark conductivity and photoconductivity as well as the modulated photoconductivity. The influence of parameters such as the density of states and attempt-to-hop frequency on the results of these experiments has been investigated. Steady state and modulated photoconductivity experiments have been performed on a hydrogenated amorphous silicon film in the temperature range 18-300 K and the results have been compared with those from the numerical simulation. This comparison shows that the latter provides a suitable interpretation of the experimental behaviours observed in both experiments.

Interpretation of electron diffusion coefficient in organic and inorganic semiconductors with broad distributions of states

The carrier transport properties in nanocrystalline semiconductors and organic materials play a key role for modern organic/inorganic devices such as dye-sensitized (DSC) and organic solar cells, organic and hybrid light-emitting diodes (OLEDs), organic field-effect transistors, and electrochemical sensors and displays. Carrier transport in these materials usually occurs by transitions in a broad distribution of localized states. As a result the transport is dominated by thermal activation to a band of extended states (multiple trapping), or if these do not exist, by hopping via localized states. We provide a general view of the physical interpretation of the variations of carrier transport coefficients (diffusion coefficient and mobility) with respect to the carrier concentration, or Fermi level, examining in detail models for carrier transport in nanocrystalline semiconductors and organic materials with the following distributions: single and two-level systems, exponential and Gaussian density of states. We treat both the multiple trapping models and the hopping model in the transport energy approximation. The analysis is simplified by thermodynamic properties: the chemical capacitance, C(mu), and the thermodynamic factor, chi(n), that allow us to derive many properties of the chemical diffusion coefficient, D(n), used in Fick's law. The formulation of the generalized Einstein relation for the mobility to diffusion ratio shows that the carrier mobility is proportional to the jump diffusion coefficient, D(J), that is derived from single particle random walk. Characteristic experimental data for nanocrystalline TiO(2) in DSC and electrochemically doped conducting polymers are discussed in the light of these models.