Giant magnetoresistance of (001)Fe/(001)Cr magnetic superlattices

In vivo magnetic recording of single-neuron action potentials

Measuring fast neuronal signals is the domain of electrophysiology and magnetophysiology. While electrophysiology is easier to perform, magnetophysiology avoids tissue-based distortions and measures a signal with directional information. At the macroscale, magnetoencephalography (MEG) is established, and at the mesoscale, visually evoked magnetic fields have been reported. At the microscale however, while benefits of recording magnetic counterparts of electric spikes would be numerous, they are also highly challenging in vivo . Here, we combine magnetic and electric recordings of neuronal action potentials in anesthetized rats using miniaturized giant magneto-resistance (GMR) sensors. We reveal the magnetic signature of action potentials of well-isolated single units. The recorded magnetic signals showed a distinct waveform and considerable signal strength. This demonstration of in vivo magnetic action potentials opens a wide field of possibilities to profit from the combined power of magnetic and electric recordings and thus to significantly advance the understanding of neuronal circuits.

Significance statement

Electrophysiological tools allow the measurement of single-neuron action potentials with high temporal resolution. Magnetophysiological measurements would add valuable information, but are particularly hard to achieve for single neurons. Established technology for non-invasive magnetic brain signal measurements can currently not be used inside living tissue. Here, we demonstrate that miniaturized magnetic sensors based on giant magneto-resistance enable the measurement of the magnetic counterpart of single-neuron action potentials in vivo. This proof-of-principle shows a way towards integrating magnetic and electric recordings in future experiments and thus to profit from the complementary information measured by the two modalities.

Semi-classical origin of the extreme magnetoresistance in PtSn4

The so-called "extreme magnetoresistance" (XMR) found in few conductors poses interesting conceptual challenges which address needs in technology. In contrast to the more common XMR in semi-metals, PtSn4 stands out as a rare example of a high carrier density multi-band metal exhibiting XMR, sparking an active debate about its microscopic origin. Here we report a sharp sensitivity of its XMR upon the field angle, with an almost complete collapse only for one specific current and field direction (B//b, I//a). Corroborated by band-structure calculations, we identify a singular open orbit on one of its Fermi surface sheets as the origin of this collapse. This remarkably switchable XMR resolves the puzzle in PtSn4 as a semi-classical effect of an ultra-pure, compensated carrier metal. It further showcases the importance of Ockham's razor in uncommon magnetotransport phenomena and demonstrates the remarkable physical properties conventional metals can exhibit given they are superbly clean.

Advances in Flexible Magnetosensitive Materials and Devices for Wearable Electronics

Emerging fields, such as wearable electronics, digital healthcare, the Internet of Things, and humanoid robots, highlight the need for flexible devices capable of recording signals on curved surfaces and soft objects. In particular, flexible magnetosensitive devices garner significant attention owing to their ability to combine the advantages of flexible electronics and magnetoelectronic devices, such as reshaping capability, conformability, contactless sensing, and navigation capability. Several key challenges must be addressed to develop well-functional flexible magnetic devices. These include determining how to make magnetic materials flexible and even elastic, understanding how the physical properties of magnetic films change under external strain and stress, and designing and constructing flexible magnetosensitive devices. In recent years, significant progress is made in addressing these challenges. This study aims to provide a timely and comprehensive overview of the most recent developments in flexible magnetosensitive devices. This includes discussions on the fabrications and mechanical regulations of flexible magnetic materials, the principles and performances of flexible magnetic sensors, and their applications for wearable electronics. In addition, future development trends and challenges in this field are discussed.

Spin caloritronics in metallic superlattices

Spin caloritronics, a research field studying on the interconversion between a charge current (Jc) and a heat current (Jq) mediated by a spin current (Js) and/or magnetization (M), has attracted much attention not only for academic interest but also for practical applications. Newly discovered spin-caloritronic phenomena such as the spin Seebeck effect (SSE) have stimulated the renewed interest in the thermoelectric phenomena of a magnet, which have been known for a long time, e.g. the anomalous Nernst effect (ANE). These spin-caloritronic phenomena involving the SSE and the ANE have provided with a new direction for thermoelectric conversion exploitingJsand/orM. Importantly, the symmetry of ANE allows the thermoelectric conversion in the transverse configuration betweenJqandJc. Although the transverse configuration is totally different from the conventional longitudinal configuration based on the Seebeck effect and has many advantages, we are still facing several issues that need to be solved before developing practical applications. The primal issue is the improvement of conversion efficiency. In the case of ANE-based applications, a material with a large anomalous Nernst coefficient (SANE) is the key for solving the issue. This review article introduces the increase ofSANEcan be achieved by forming superlattice structures, which has been demonstrated for several kinds of materials combinations. The overall picture of studies on spin caloritronics is first surveyed. Then, we mention the pioneering work on the transverse thermoelectric conversion in superlattice structures, which was performed using Fe-based metallic superlattices, and show the recent studies for the Ni-based metallic superlattices and the ordered alloy-based metallic superlattices.

Extreme magnetoresistance at high-mobility oxide heterointerfaces with dynamic defect tunability

Magnetic field-induced changes in the electrical resistance of materials reveal insights into the fundamental properties governing their electronic and magnetic behavior. Various classes of magnetoresistance have been realized, including giant, colossal, and extraordinary magnetoresistance, each with distinct physical origins. In recent years, extreme magnetoresistance (XMR) has been observed in topological and non-topological materials displaying a non-saturating magnetoresistance reaching 103-108% in magnetic fields up to 60 T. XMR is often intimately linked to a gapless band structure with steep bands and charge compensation. Here, we show that a linear XMR of 80,000% at 15 T and 2 K emerges at the high-mobility interface between the large band-gap oxides γ-Al2O3 and SrTiO3. Despite the chemically and electronically very dissimilar environment, the temperature/field phase diagrams of γ-Al2O3/SrTiO3 bear a striking resemblance to XMR semimetals. By comparing magnetotransport, microscopic current imaging, and momentum-resolved band structures, we conclude that the XMR in γ-Al2O3/SrTiO3 is not strongly linked to the band structure, but arises from weak disorder enforcing a squeezed guiding center motion of electrons. We also present a dynamic XMR self-enhancement through an autonomous redistribution of quasi-mobile oxygen vacancies. Our findings shed new light on XMR and introduce tunability using dynamic defect engineering.

Colossal anisotropic absorption of spin currents induced by chirality

The chiral induced spin selectivity (CISS) effect, in which the structural chirality of a material determines the preference for the transmission of electrons with one spin orientation over that of the other, is emerging as a design principle for creating next-generation spintronic devices. CISS implies that the spin preference of chiral structures persists upon injection of pure spin currents and can act as a spin analyzer without the need for a ferromagnet. Here, we report an anomalous spin current absorption in chiral metal oxides that manifests a colossal anisotropic nonlocal Gilbert damping with a maximum-to-minimum ratio of up to 1000%. A twofold symmetry of the damping is shown to result from differential spin transmission and backscattering that arise from chirality-induced spin splitting along the chiral axis. These studies reveal the rich interplay of chirality and spin dynamics and identify how chiral materials can be implemented to direct the transport of spin current.

Emerging Spintronic Materials and Functionalities

The explosive growth of the information era has put forward urgent requirements for ultrahigh-speed and extremely efficient computations. In direct contrary to charge-based computations, spintronics aims to use spins as information carriers for data storage, transmission, and decoding, to help fully realize electronic device miniaturization and high integration for next-generation computing technologies. Currently, many novel spintronic materials have been developed with unique properties and multifunctionalities, including organic semiconductors (OSCs), organic-inorganic hybrid perovskites (OIHPs), and 2D materials (2DMs). These materials are useful to fulfill the demand for developing diverse and advanced spintronic devices. Herein, these promising materials are systematically reviewed for advanced spintronic applications. Due to the distinct chemical and physical structures of OSCs, OIHPs, and 2DMs, their spintronic properties (spin transport and spin manipulation) are discussed separately. In addition, some multifunctionalities due to photoelectric and chiral-induced spin selectivity (CISS) are overviewed, including the spin-filter effect, spin-photovoltaics, spin-light emitting devices, and spin-transistor functions. Subsequently, challenges and future perspectives of using these multifunctional materials for the development of advanced spintronics are presented.

Room‐Temperature Antisymmetric Magnetoresistance in van der Waals Ferromagnet Fe3GaTe2 Nanosheets

Van der Waals (vdW) ferromagnetic materials have emerged as a promising platform for the development of 2D spintronic devices. However, studies to date are restricted to vdW ferromagnetic materials with low Curie temperature (Tc) and small magnetic anisotropy. Here, a chemical vapor transport method is developed to synthesize a high-quality room-temperature ferromagnet, Fe3GaTe2 (c-Fe3GaTe2), which boasts a high Tc = 356 K and large perpendicular magnetic anisotropy. Due to the planar symmetry breaking, an unconventional room-temperature antisymmetric magnetoresistance (MR) is first observed in c-Fe3GaTe2 devices with step features, manifesting as three distinctive states of high, intermediate, and low resistance with the sweeping magnetic field. Moreover, the modulation of the antisymmetric MR is demonstrated by controlling the height of the surface steps. This work provides new routes to achieve magnetic random storage and logic devices by utilizing the room-temperature thickness-controlled antisymmetric MR and further design room-temperature 2D spintronic devices based on the vdW ferromagnet c-Fe3GaTe2.

Emerging Nonlinear Photocurrents in Lead Halide Perovskites for Spintronics

Lead halide perovskites (LHPs) containing organic parts are emerging optoelectronic materials with a wide range of applications thanks to their high optical absorption, carrier mobility, and easy preparation methods. They possess spin-dependent properties, such as strong spin-orbit coupling (SOC), and are promising for spintronics. The Rashba effect in LHPs can be manipulated by a magnetic field and a polarized light field. Considering the surfaces and interfaces of LHPs, light polarization-dependent optoelectronics of LHPs has attracted attention, especially in terms of spin-dependent photocurrents (SDPs). Currently, there are intense efforts being made in the identification and separation of SDPs and spin-to-charge interconversion in LHP. Here, we provide a comprehensive review of second-order nonlinear photocurrents in LHP in regard to spintronics. First, a detailed background on Rashba SOC and its related effects (including the inverse Rashba-Edelstein effect) is given. Subsequently, nonlinear photo-induced effects leading to SDPs are presented. Then, SDPs due to the photo-induced inverse spin Hall effect and the circular photogalvanic effect, together with photocurrent due to the photon drag effect, are compared. This is followed by the main focus of nonlinear photocurrents in LHPs containing organic parts, starting from fundamentals related to spin-dependent optoelectronics. Finally, we conclude with a brief summary and future prospects.

Voltage-induced modulation of the magnetic exchange in binuclear Fe(III) complex deposited on Au(111) surface

We present a complete computational study devoted to the deposition of a magnetic binuclear complex on a metallic surface, aimed to obtain insight into the interaction of magnetically coupled complexes with their supporting substrates, as well as their response to external electrical stimuli applied through a surface-molecule-STM molecular junction-like architecture. Our results not only show that the deposition is favorable in two of the four studied orientations, but also, that the magnetic coupling is only slightly perturbed once the complex is adsorbed. We observe that the effects of the applied bias voltage on the magnetic coupling strongly depend on the molecule orientation with respect to the surface and the voltage polarity. Further analysis shows that this behavior is attributable to the stabilization/destabilization of the d-type singly occupied orbitals of the iron centers, reinforced by the strong local electric fields and induced charge densities only present in certain orientations of the deposited molecule and applied voltage polarity.

Perspectives: Light Control of Magnetism and Device Development

Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.

Imaging electromagnetic boundary of microdevice using a wide field quantum microscope

Imaging of electronic device surface or sub-surface electromagnetic fields under operating conditions is important for device design and diagnosis. In this study, we proposed a method to characterize specific magnetic field properties of electromagnetic devices at micron-scale using a solid-state quantum sensor, namely diamond nitrogen-vacancy (NV) centers. By employing a wide-field magnetic field measurement technique based on NV centers, we rapidly obtain the first-order magnetic field distribution of anomalous regions. Furthermore, we approximate the second-order magnetic field (magnetic gradient tensor) using the differential gradient method. To visualize the electromagnetic anomalous regions boundary, we utilize the tensor invariants of the magnetic gradient tensor components, along with their nonlinear combinations. The identification error rate of the anomalous regions is within 12.5%. Additionally, the electromagnetic field of anomalous regions is simulated showing the measurement accuracy. Our study shows that the experimental results are very similar to the theoretical simulation of the electromagnetic field (error: 7%). This work is essential for advancing electromagnetic field characterization of electronic devices and the advancement of quantum magnetic sensor applications.

Ab-initio Calculations of the Half-metallic Ferromagnetic New Variant Perovskites Li2CrO6 and Li2CuO6

The half-metallic calculations of new variant perovskites Li2CrO6 and Li2CuO6 were carried out by using WIEN2k computational code. First, the ferromagnetic (FM) and non-magnetic (NM) phases were compared, and FM phases were obtained energetically more stable. The equilibrium lattice constants were obtained as 7.63 Å and 7.66 Å for Li2CrO6 and Li2CuO6, respectively. Second, the electronic calculations were performed, and the semiconduction properties were seen in spin-up states while spin-down states showed metallic nature. The band gaps were obtained as 1.806 eV and 1.177 eV for Li2CrO6 and Li2CuO6, respectively. Since variant perovskites Li2CrO6 and Li2CuO6 showed 100% spin polarizations, these were obtained as true half-metallic ferromagnetic materials. Then the total magnetic moments were obtained as 4.00 μB/f.u., 5.00 μB/f.u. When both the electronic and magnetic properties of the compounds are examined, the variant perovskites Li2CrO6 and Li2CuO6 are suitable materials for spintronics applications.

Chiral Induced Spin Selectivity

Since the initial landmark study on the chiral induced spin selectivity (CISS) effect in 1999, considerable experimental and theoretical efforts have been made to understand the physical underpinnings and mechanistic features of this interesting phenomenon. As first formulated, the CISS effect refers to the innate ability of chiral materials to act as spin filters for electron transport; however, more recent experiments demonstrate that displacement currents arising from charge polarization of chiral molecules lead to spin polarization without the need for net charge flow. With its identification of a fundamental connection between chiral symmetry and electron spin in molecules and materials, CISS promises profound and ubiquitous implications for existing technologies and new approaches to answering age old questions, such as the homochiral nature of life. This review begins with a discussion of the different methods for measuring CISS and then provides a comprehensive overview of molecules and materials known to exhibit CISS-based phenomena before proceeding to identify structure-property relations and to delineate the leading theoretical models for the CISS effect. Next, it identifies some implications of CISS in physics, chemistry, and biology. The discussion ends with a critical assessment of the CISS field and some comments on its future outlook.

Spin-dependent transport and spin transfer torque in a borophene-based spin valve

This article presents a theoretical analysis of spin-dependent transport and spin-transfer torque in a borophene-based ferromagnetic/normal/ferromagnetic junction. This study focuses on borophene nanoribbons (BNRs) as a basis for spin valve numerical calculations for the investigation of conduction in both configurations where the magnetization vectors of the leads are parallel or antiparallel to each other (P and AP configurations, respectively), magnetoresistance (MR), and spin transfer torque (STT). The Landauer formalism and non-equilibrium Green's function (NEGF) approaches are used to derive the spin-dependent tunneling currents in the Magnetic Tunnel Junction (MTJ). The results of the calculations for a zigzag BNR show that the conductance is always larger than e2/h for the P configuration of lead magnetizations. For the AP configuration, the conductance becomes zero in specific energy ranges. A perfect MR plateau is found for the junction in the absence of disorder, which proves to be an excellent spin valve candidate. The variations of STT with Fermi energy and the relative angle between the magnetizations of two electrodes are studied for different strengths of ferromagnetic magnetization. The STT per unit bias voltage, as a function of Fermi energy, decreases significantly near the Dirac point energy. A sinusoidal oscillatory pattern can be evidently observed in the STT at unit bias voltage V versus the angle between the magnetizations of two electrodes, which amplifies as M increases. Borophene has unique properties, including low density and high hardness, heat resistance, and electrical conductance, which make it a promising candidate for spintronics. This article provides a comprehensive analysis of the spin-dependent properties of borophene and its potential applications in spintronics.

Structural, chemical, and magnetic investigation of a graphene/cobalt/platinum multilayer system on silicon carbide

We investigate the magnetic interlayer coupling and domain structure of ultra-thin ferromagnetic (FM) cobalt (Co) layers embedded between a graphene (G) layer and a platinum (Pt) layer on a silicon carbide (SiC) substrate (G/Co/Pt on SiC). Experimentally, a combination of x-ray photoemission electron microscopy with x-ray magnetic circular dichroism has been carried out at the Co L-edge. Furthermore, structural and chemical properties of the system have been investigated using low energy electron diffraction (LEED) and x-ray photoelectron spectroscopy (XPS).In situLEED patterns revealed the crystalline structure of each layer within the system. Moreover, XPS confirmed the presence of quasi-freestanding graphene, the absence of cobalt silicide, and the appearance of two silicon carbide surface components due to Pt intercalation. Thus, the Pt-layer effectively functions as a diffusion barrier. The magnetic structure of the system was unaffected by the substrate's step structure. Furthermore, numerous vortices and anti-vortices were found in all samples, distributed all over the surfaces, indicating Dzyaloshinskii-Moriya interaction. Only regions with a locally increased Co-layer thickness showed no vortices. Moreover, unlike in similar systems, the magnetization was predominantly in-plane, so no perpendicular magnetic anisotropy was found.

Ab initio investigations of the structure-stability, mechanical, electronic, thermodynamic and optical properties of Ti2FeAs Heusler alloy

In this study, we employed density functional theory coupled with the full-potential linearized augmented plane-wave method (FP-LAPW) to investigate the structural, electronic, and magnetic properties of the Ti2FeAs alloy adopting the Hg2CuTi-type structure. Our findings demonstrate that all the examined structures exhibit ferromagnetic (FM) behaviour. By conducting electronic band structure calculations, we observed an energy gap of 0.739 eV for Ti2FeAs in the spin-down state and metallic intersections at the Fermi level in the spin-up state. These results suggest the half-metallic (HM) nature of Ti2FeAs, where the Ti-d and Fe-d electronic states play a significant role near the Fermi level. Additionally, the obtained total magnetic moments are consistent with the Slater-Pauling rule (Mtot = Ztot - 18), indicating 100% spin polarization for these compounds. To explore their optical properties, we employed the dielectric function to compute various optical parameters, including absorption spectra, energy-loss spectra, refractive index, reflectivity, and conductivity. Furthermore, various thermodynamic parameters were evaluated at different temperatures and pressures. The results obtained from the elastic parameters reveal the anisotropic and ductile nature of the Ti2FeAs compound. These findings suggest that Ti2FeAs has potential applications in temperature-tolerant devices and optoelectronic devices as a UV absorber.

Interlayer engineering of Fe3GeTe2: From 3D superlattice to 2D monolayer

The discoveries of ferromagnetism down to the atomically thin limit in van der Waals (vdW) crystals by mechanical exfoliation have enriched the family of magnetic thin films [C. Gong et al., Nature 546, 265-269 (2017) and B. Huang et al., Nature 546, 270-273 (2017)]. However, compared to the study of traditional magnetic thin films by physical deposition methods, the toolbox of the vdW crystals based on mechanical exfoliation and transfer suffers from low yield and ambient corrosion problem and now is facing new challenges to study magnetism. For example, the formation of magnetic superlattice is difficult in vdW crystals, which limits the study of the interlayer interaction in vdW crystals [M. Gibertini, M. Koperski, A. F. Morpurgo, K. S. Novoselov, Nat. Nanotechnol. 14, 408-419 (2019)]. Here, we report a strategy of interlayer engineering of the magnetic vdW crystal Fe3GeTe2 (FGT) by intercalating quaternary ammonium cations into the vdW spacing. Both three-dimensional (3D) vdW superlattice and two-dimensional (2D) vdW monolayer can be formed by using this method based on the amount of intercalant. On the one hand, the FGT superlattice shows a strong 3D critical behavior with a decreased coercivity and increased domain wall size, attributed to the co-engineering of the anisotropy, exchange interaction, and electron doping by intercalation. On the other hand, the 2D vdW few layers obtained by over-intercalation are capped with organic molecules from the bulk crystal, which not only enhances the ferromagnetic transition temperature (TC), but also substantially protects the thin samples from degradation, thus allowing the preparation of large-scale FGT ink in ambient environment.

Electric-Field Control of Perpendicularly Magnetized Ferrimagnetic Order and Giant Magnetoresistance in Multiferroic Heterostructures

Electrical control of magnetism is highly desirable for energy-efficient spintronic applications. Realizing electric-field-driven perpendicular magnetization switching has been a long-standing goal, which, however, remains a major challenge. Here, electric-field control of perpendicularly magnetized ferrimagnetic order via strain-mediated magnetoelectric coupling is reported. We show that the gate voltages isothermally toggle the dominant magnetic sublattice of the compensated ferrimagnet FeTb at room temperature, showing high reversibility and good endurance under ambient conditions. By implementing this strategy in FeTb/Pt/Co spin valves with giant magnetoresistance (GMR), we demonstrate that the distinct high and low resistance states can be selectively controlled by the gate voltages with assisting magnetic fields. Our results provide a promising route to use ferrimagnets for developing electric-field-controlled, low-power memory and logic devices.

Magnetic-Field Response and Giant Electric-Field Modulation of Cu2S

Cu2S likely plays an important role in the sharp resistivity transition of LK-99. Nevertheless, this immediately arouses an intriguing question of whether the extraordinary room-temperature colossal magnetoresistance in the initial reports, which has been less focused, originates from Cu2S as well. To resolve this issue, we have systematically investigated the electrical transport and magnetotransport properties of near-stoichiometric Cu2S pellets and thin films. Neither Cu2S nor LK-99 containing Cu2S in this study was found to exhibit the remarkable magnetoresistance effect implied by Lee et al. This implies that Cu2S could not account for all of the intriguing transport properties of the initially reported LK-99, and the initially reported LK-99 samples might contain magnetic impurities. Moreover, based on the crystal-structure-sensitive electrical properties of Cu2S, we have constructed a piezoelectric-strain-controlled device and obtained a giant and reversible resistance modulation of 2 orders of magnitude at room temperature, yielding a huge gauge factor of 160,000.

Electronic and magnetic properties of GeS monolayer effected by point defects and doping

In this work, defect engineering and doping are proposed to effectively functionalize a germanium sulfide (GeS) mononolayer. With a buckled hexagonal structure, the good dynamical and thermal stability of the GeS monolayer is confirmed. PBE(HSE06)-based calculations assert the indirect gap semiconductor nature of this two-dimensional (2D) material with a relatively large band gap of 2.48(3.28) eV. The creation of a single Ge vacancy magnetizes the monolayer with a total magnetic moment of 1.99 μB, creating a the feature-rich half-metallic nature. VaS vacancy, VaGeS divacancy, SGe and GeS antisites preserve the non-magnetic nature; however, they induce considerable band gap reduction of the order 47.98%, 89.11%, 29.84%, and 62.5%, respectively. By doping with transition metals (TMs), large total magnetic moments of 3.00, 4.00, and 5.00 μB are obtained with V, Cr-Fe, and Mn impurities, respectively. The 3d orbital of TM dopants mainly regulates the electronic and magnetic properties, which induces either the half-metallic or diluted magnetic semiconductor nature. It is found that the doping site plays a determinant role in the case of doping with VA-group atoms (P and As). The GeS monolayer can be metallized by doping the Ge sublattice, meanwhile both spin states exhibit semiconductor character with strong spin polarization upon doping the S sublattice to obtain a diluted magnetic semiconductor nature with a total magnetic moment of 1.00 μB. In these cases, the magnetism originates mainly from P and As impurities. The obtained results suggest an efficient approach to functionalize the GeS monolayer for optoelectronic and spintronic applications.

Antiferromagnetic interlayer exchange coupled Co68B32/Ir/Pt multilayers

Synthetic antiferromagnetic structures can exhibit the advantages of high velocity similarly to antiferromagnets with the additional benefit of being imaged and read-out through techniques applied to ferromagnets. Here, we explore the potential and limits of synthetic antiferromagnets to uncover ways to harness their valuable properties for applications. Two synthetic antiferromagnetic systems have been engineered and systematically investigated to provide an informed basis for creating devices with maximum potential for data storage, logic devices, and skyrmion racetrack memories. The two systems considered are (system 1) CoB/Ir/Pt of N repetitions with Ir inducing the negative coupling between the ferromagnetic layers and (system 2) two ferromagnetically coupled multilayers of CoB/Ir/Pt, coupled together antiferromagnetically with an Ir layer. From the hysteresis, it is found that system 1 shows stable antiferromagnetic interlayer exchange coupling between each magnetic layer up to N = 7. Using Kerr imaging, the two ferromagnetic multilayers in system 2 are shown to undergo separate maze-like switches during hysteresis. Both systems are also studied as a function of temperature and show different behaviors. Micromagnetic simulations predict that in both systems the skyrmion Hall angle is suppressed with the skyrmion velocity five times higher in system 1 than system 2.

Fully Electrically Controlled van der Waals Multiferroic Tunnel Junctions

The fully electrical control of the magnetic states in magnetic tunnel junctions is highly pursued for the development of the next generation of low-power and high-density information technology. However, achieving this functionality remains a formidable challenge at present. Here we propose an effective strategy by constructing a trilayer van der Waals multiferroic structure, consisting of CrI3-AgBiPSe6 and Cr2Ge2Te6-In2Se3, to achieve full-electrical control of multiferroic tunnel junctions. Within this structure, two different magnetic states of the magnetic bilayers (CrI3/Cr2Ge2Te6) can be modulated and switched in response to the polarization direction of the adjacent ferroelectric materials (AgBiPSe6/In2Se3). The intriguing magnetization reversal is mainly attributed to the polarization-field-induced band structure shift and interfacial charge transfer. On this basis, we further design two multiferroic tunnel junction devices, namely, graphene/CrI3-AgBiPSe6/graphene and graphene/Cr2Ge2Te6-In2Se3/graphene. In these devices, good interfacial Ohmic contacts are successfully obtained between the graphene electrode and the heterojunction, leading to an ultimate tunneling magnetoresistance of 9.3 × 106%. This study not only proposes a feasible strategy and identifies a promising candidate for achieving fully electrically controlled multiferroic tunnel junctions but also provides insights for designing other advanced spintronic devices.

High-Mobility Topological Semimetals as Novel Materials for Huge Magnetoresistance Effect and New Type of Quantum Hall Effect

The quantitative description of electrical and magnetotransport properties of solid-state materials has been a remarkable challenge in materials science over recent decades. Recently, the discovery of a novel class of materials-the topological semimetals-has led to a growing interest in the full understanding of their magnetotransport properties. In this review, the strong interplay among topology, band structure, and carrier mobility in recently discovered high carrier mobility topological semimetals is discussed and their effect on their magnetotransport properties is outlined. Their large magnetoresistance effect, especially in the Hall transverse configuration, and a new version of a three-dimensional quantum Hall effect observed in high-mobility Weyl and Dirac semimetals are reviewed. The possibility of designing novel quantum sensors and devices based on solid-state semimetals is also examined.

Robust Two-Dimensional Ferromagnetism in Cr5Te8/CrTe2 Heterostructure with Curie Temperature above 400 K

The discovery of ferromagnetism in two-dimensional (2D) van der Waals crystals has generated widespread interest. The seeking of robust 2D ferromagnets with high Curie temperature (Tc) is vitally important for next-generation spintronic devices. However, owing to the enhanced spin fluctuation and weak exchange interaction upon the reduced dimensionalities, the exploring of robust 2D ferromagnets with Tc > 300 K is highly demanded but remains challenging. In this work, we fabricated air-stable 2D Cr5Te8/CrTe2 vertical heterojunctions with Tc above 400 K by the chemical vapor deposition method. Transmission electron microscopy demonstrates a high-quality-crystalline epitaxial structure between tri-Cr5Te8 and 1T-CrTe2 with striped moiré patterns and a superior ambient stability over six months. A built-in dual-axis strain together with strong interfacial coupling cooperatively leads to a record-high Tc for the CrxTey family. A temperature-dependent spin-flip process induces the easy axis of magnetization to rotate from the out-of-plane to the in-plane direction, indicating a phase-dependent proximity coupling effect, rationally interpreted by first-principles calculations of the magnetic anisotropy of a tri-Cr5Te8 and 1T-CrTe2 monolayer. Our results provide a material realization of effectively enhancing the transition temperature of 2D ferromagnetism and manipulating the spin-flip of the easy axis, which will facilitate future spintronic applications.

Measurement of spin-orbit torque using field counterbalancing in radial current geometry

Controlling the direction of magnetization with an electric current, rather than a magnetic field, is a powerful technique in spintronics. Spin-orbit torque, which generates an effective magnetic field from the injected current, is a promising method for this purpose. Here we show an approach for quantifying the magnitude of spin-orbit torque from a single magnetic image. To achieve this, we deposited two concentric electrodes on top of the magnetic sample to flow a radial current. By counterbalancing the current effect with an external magnetic field, we can create a stable circular magnetization state. We measure the magnitude of spin-orbit torque from the stable radius, providing a new tool for characterizing spin-orbit torque.

The tunable anisotropic Rashba spin-orbit coupling effect in Pb-adsorbed Janus monolayer WSeTe

The spin-splitting properties of Pb-adsorbed monolayer Janus WSeTe are investigated based on first-principles calculations. The adsorbed system shows large Rashba splitting (the Rashba parameter is up to 0.75 eV Å), and we find that different adsorption layers (Te/Se adsorption layers) exhibit different significant features under spin-orbit coupling. Zeeman splitting and Rashba splitting co-exist at the high symmetry Γ point of the Te adsorption layer, while the Se adsorption layer exhibits anisotropic Rashba spin-orbit coupling. It was determined using k·p perturbation theory that Pb atom adsorption reduces the initial symmetry of the 2H-WSeTe monolayer and induces a strong spin-orbit coupling effect, so as to induce the anisotropic Rashba effect. Furthermore, the tunability of Rashba splitting was demonstrated by varying the adsorption concentration, adjusting the adsorption distance, and applying biaxial strain. This predicted adsorption system has potential value in spintronic devices.

Large interlayer Dzyaloshinskii-Moriya interactions across Ag-layers

Seeking to enhance the strength of the interlayer Dzyaloshinskii-Moriya interaction (IL-DMI) through a combination of atomic and Rashba type spin-orbit coupling (SOC) we studied the strength and the thickness evolution of effective interlayer coupling in Co/Ag/Co trilayers by means of surface sensitive magneto-optical measurements that take advantage of the light penetration depth. Here, we report the observation of oscillatory, thickness-dependent chiral interaction between ferromagnetic layers. Despite the weakness of the Ag atomic SOC, the IL-DMI in our trilayers is orders of magnitude larger than that of known systems using heavy metals as a spacer except of recently reported -0.15 mJ/m2 in Co/Pt/Ru(t)/Pt/Co and varies between ≈ ±0.2 mJ/m2. In contrast to known multilayers Co/Ag/Co promotes in-plane chirality between magnetic layers. The strength of IL-DMI opens up new routes for design of three-dimensional chiral spin structures combining intra- and interlayer DMI and paves the way for enhancements of the DMI strength.

Magnetoresistance in Organic Spin Valves Based on Acid-Exfoliated 2D Covalent Organic Frameworks Thin Films

Covalent organic frameworks (COFs), as a burgeoning class of crystalline porous materials, have made significant progress in their application to optoelectronic devices such as field-effect transistors, memristors, and photodetectors. However, the insoluble features of microcrystalline two-dimensional (2D) COF powders limit development of their thin film devices. Additionally, the exploration of spin transport properties in this category of π-conjugated skeleton materials remains vacant thus far. Herein, an imine-linked 2D Py-Np COF nanocrystalline powder was synthesized by Schiff base condensation of 4,4',4'',4'''-(pyrene-1,3,6,8-tetrayl)tetraaniline and naphthalene-2,6-dicarbaldehyde. Then, we prepared a large-scale free-standing Py-Np COF film via a top-down strategy of chemically assisted acid exfoliation. Moreover, high-quality COF films acted as active layers were transferred onto ferromagnetic La0.67 Sr0.33 MnO3 (LSMO) electrodes for the first attempt to fabricate organic spin valves (OSVs) based on 2D COF materials. This COF-based OSV device with a configuration of LSMO/Py-Np COF/Co/Au demonstrated a remarkable magnetoresistance (MR) value up to -26.5 % at 30 K. Meanwhile, the MR behavior of the COF-based OSVs exhibited a highly temperature dependence and operational stability. This work highlights the enormous application prospects of 2D COFs in organic spintronics and provides a promising approach for developing electronic and spintronic devices based on acid-exfoliated COF thin films.

Spin Polarization in Transport Studies of Chirality-Induced Spin Selectivity

Chirality-induced spin selectivity (CISS) is a recently discovered effect in which structural chirality can result in different conductivities for electrons with opposite spins. In the CISS community, the degree of spin polarization is commonly used to describe the efficiency of the spin filtering/polarizing process, as it represents the fraction of spins aligned along the chiral axis of chiral materials originating from non-spin-polarized currents. However, the methods of defining, calculating, and analyzing spin polarization have been inconsistent across various studies, hindering advances in this field. In this Perspective, we connect the relevant background and the definition of spin polarization, discuss its calculation in different contexts in the CISS, and propose a practical and meaningful figure of merit by quantitative analysis of magnetoresistance in CISS transport studies.

Giant Magnetoresistance Based Biosensors for Cancer Screening and Detection

Early-stage screening of cancer is critical in preventing its development and therefore can improve the prognosis of the disease. One accurate and effective method of cancer screening is using high sensitivity biosensors to detect optically, chemically, or magnetically labeled cancer biomarkers. Among a wide range of biosensors, giant magnetoresistance (GMR) based devices offer high sensitivity, low background noise, robustness, and low cost. With state-of-the-art micro- and nanofabrication techniques, tens to hundreds of independently working GMR biosensors can be integrated into fingernail-sized chips for the simultaneous detection of multiple cancer biomarkers (i.e., multiplexed assay). Meanwhile, the miniaturization of GMR chips makes them able to be integrated into point-of-care (POC) devices. In this review, we first introduce three types of GMR biosensors in terms of their structures and physics, followed by a discussion on fabrication techniques for those sensors. In order to achieve target cancer biomarker detection, the GMR biosensor surface needs to be subjected to biological decoration. Thus, commonly used methods for surface functionalization are also reviewed. The robustness of GMR-based biosensors in cancer detection has been demonstrated by multiple research groups worldwide and we review some representative examples. At the end of this review, the challenges and future development prospects of GMR biosensor platforms are commented on. With all their benefits and opportunities, it can be foreseen that GMR biosensor platforms will transition from a promising candidate to a robust product for cancer screening in the near future.

Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal

Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb0.11Te1.90 hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal-like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.

Potential of AlP and GaN as barriers in magnetic tunnel junctions

AlP and GaN are wide band gap semiconductors used industrially in light emitting diodes. We investigate their potential as tunnel barriers in magnetic tunnel junctions, employing density functional theory and the non-equilibrium Green's function method for ground state and quantum transport calculations, respectively. We show that the valence band edges are dominated by pz orbitals and the conduction band edges are dominated by s orbitals. Both materials filter Bloch states of Δ1 symmetry at the Γ-point of the Brillouin zone. In the zero bias limit, we find for the Co/AlP/Co junction a high tunnel magnetoresistance of ∼200% at the Fermi energy and for the Co/GaN/Co junction a tunnel magnetoresistance of even ∼300% about 1.4 eV below the Fermi energy.

Momentum matching induced giant magnetoresistance in two-dimensional magnetic tunnel junctions

Giant magnetoresistance was first experimentally discovered in three-dimensional magnetic tunnel junctions (MTJs) in the late 1980s and is of great importance in nonvolatile memory applications. How to achieve a magnetoresistance as large as possible is always a central task in the study of MTJs. However, it is normally only of the order of magnitude of tens of percent in traditional MTJs. The ideal situation is the metal-insulator transition together with the magnetization reversal of one magnetic lead. In this work, we will show that this can be achieved using a two-dimensional ferromagnetic zigzag SiC nanoribbon junction based on quantum transport calculations performed with a combination of density functional theory and non-equilibrium Green's function. Specifically, with the magnetization configuration switching of the two leads from parallel to anti-parallel, the junction will change abruptly from a conducting state to an insulating state, although the two leads are always metallic, with both spin up and spin down channels crossing the Fermi level simultaneously. Extensive analysis indicates that the insulating state in the anti-parallel magnetic configuration originates not from any present mechanisms that cause full suppression of electron transmission but from momentum direction mismatching. This finding suggests a fantastic mechanism for achieving magnetoresistance or electrical switching in nanoscale devices by manipulating band dispersion.

Ferroic Phases in Two-Dimensional Materials

Two-dimensional (2D) ferroics, namely ferroelectric, ferromagnetic, and ferroelastic materials, are attracting rising interest due to their fascinating physical properties and promising functional applications. A variety of 2D ferroic phases, as well as 2D multiferroics and the novel 2D ferrovalleytronics/ferrotoroidics, have been recently predicted by theory, even down to the single atomic layers. Meanwhile, some of them have already been experimentally verified. In addition to the intrinsic 2D ferroics, appropriate stacking, doping, and defects can also artificially regulate the ferroic phases of 2D materials. Correspondingly, ferroic ordering in 2D materials exhibits enormous potential for future high density memory devices, energy conversion devices, and sensing devices, among other applications. In this paper, the recent research progresses on 2D ferroic phases are comprehensively reviewed, with emphasis on chemistry and structural origin of the ferroic properties. In addition, the promising applications of the 2D ferroics for information storage, optoelectronics, and sensing are also briefly discussed. Finally, we envisioned a few possible pathways for the future 2D ferroics research and development. This comprehensive overview on the 2D ferroic phases can provide an atlas for this field and facilitate further exploration of the intriguing new materials and physical phenomena, which will generate tremendous impact on future functional materials and devices.

Paramagnetic Singularities of the Orbital Magnetism in Graphene with a Moiré Potential

The recent detection of the singular diamagnetism of Dirac electrons in a single graphene layer paved a new way of probing 2D quantum materials through the measurement of equilibrium orbital currents which cannot be accessed in usual transport experiments. Among the theoretical predictions is an intriguing orbital paramagnetism at saddle points of the dispersion relation. Here we present magnetization measurements in graphene monolayers aligned on hexagonal boron nitride crystals. Besides the sharp diamagnetic McClure response at the Dirac point, we detect extra diamagnetic singularities at the satellite Dirac points of the moiré lattice. Surrounding these diamagnetic satellite peaks, we also observe paramagnetic peaks located at the chemical potential of the saddle points of the graphene moiré band structure and relate them to the presence of van Hove logarithmic singularities in the density of states. These findings reveal the long ago predicted anomalous paramagnetic orbital response in 2D systems when the Fermi energy is tuned to the vicinity of saddle points.

Optically Driven Both Classical and Quantum Unary, Binary, and Ternary Logic Gates on Co-Decorated Graphene Nanoflakes

Nanospintronics holds great potential for providing high-speed, low-power, and high-density logic and memory elements in future computational devices. Here, using ab initio many-body theory, we suggest a nanoscale framework for building quantum computation elements, based on individual magnetic atoms deposited on graphene nanoflakes. We show the great possibilities of this proposal by exemplarily presenting four quantum gates, namely, the unary Pauli-X, Pauli-Y, Pauli-Z, and Hadamard gates, as well as the universal classical ternary Toffoli gate, which preserves information entropy and is therefore fully reversible and minimally energy consuming. All our gates operate within the subpicosecond time scale and reach fidelities well above 90%. We demonstrate the ability to control the spin direction and localization, as well as to create superposition states and to control the quantum phase of states, which are indispensable ingredients of quantum computers. Additionally, being optically driven, their predicted operating speed by far beats that of modern quantum computers.

Probing magnetic properties at the nanoscale: in-situ Hall measurements in a TEM

We report on advanced in-situ magneto-transport measurements in a transmission electron microscope. The approach allows for concurrent magnetic imaging and high resolution structural and chemical characterization of the same sample. Proof-of-principle in-situ Hall measurements on presumably undemanding nickel thin films supported by micromagnetic simulations reveal that in samples with non-trivial structures and/or compositions, detailed knowledge of the latter is indispensable for a thorough understanding and reliable interpretation of the magneto-transport data. The proposed in-situ approach is thus expected to contribute to a better understanding of the Hall signatures in more complex magnetic textures.

Annealing effects on the magnetic and magnetotransport properties of iron oxide nanoparticles self-assemblies

In magnetic tunnel junctions based on iron oxide nanoparticles the disorder and the oxidation state of the surface spin as well as the nanoparticles functionalization play a crucial role in the magnetotransport properties. In this work, we report a systematic study of the effects of vacuum annealing on the structural, magnetic and transport properties of self-assembled ∼10 nm Fe3O4nanoparticles. The high temperature treatment (from 573 to 873 K) decomposes the organic coating into amorphous carbon, reducing the electrical resistivity of the assemblies by 4 orders of magnitude. At the same time, the 3.Fe2+/(Fe3++Fe2+) ratio is reduced from 1.11 to 0.13 when the annealing temperature of the sample increases from 573 to 873 K, indicating an important surface oxidation. Although the 2 nm physical gap remains unchanged with the thermal treatment, a monotonous decrease of tunnel barrier width was obtained from the electron transport measurements when the annealing temperature increases, indicating an increment in the number of defects and hot-spots in the gap between the nanoparticles. This is reflected in the reduction of the spin dependent tunneling, which reduces the interparticle magnetoresistance. This work shows new insights about influence of the nanoparticle interfacial composition, as well their the spatial arrangement, on the tunnel transport of self-assemblies, and evidence the importance of optimizing the nanostructure fabrication for increasing the tunneling current without degrading the spin polarized current.

Strategies and applications of generating spin polarization in organic semiconductors

The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.

First-principle computation of some physical properties of half-Heusler compounds for possible thermoelectric applications

Using the density functional theory (DFT) method, we investigate the properties of LaXSi (X = Pt, Pd) half-Heusler compounds. To ensure the stability of both compounds, we employed two criteria: the Birch-Murnaghan equation of state and the negative formation energy. The evaluation of elastic constants (ECs) plays a crucial role in determining the mechanical stability of both compounds. Specifically, we ensure that the conditions C11 - C12 > 0, C11 > 0, C11 + 2C12 > 0, and B > 0 are satisfied and exhibit mechanical anisotropy and ductility. The analysis of electronic properties clearly indicates that LaPtSi displays metallic behavior in both the spin-up and spin-down states. In the spin-up state of LaPdSi, a band gap is observed, which indicates its characteristic of being a half-metal. A comprehensive investigation of optical properties revealed that these compounds display notable absorption and optical conductivity at higher energy levels. Conversely, they exhibit transparency to incident photons at lower energy levels. Based on the findings, it can be concluded that these compounds are highly suitable for application in high-frequency UV devices. The thermoelectric properties clearly indicate that both materials exhibit high power factors, electrical conductivity, and figures of merit (ZT), suggesting their potential as exceptional thermoelectric materials. The simulations conducted in this study consider the effect of on-site Coulomb interactions by incorporating the Hubbard U term within the GGA + U. Our findings contribute valuable insights that can facilitate further experimental investigations and provide comprehensive validation.

Local symmetry breaking drives picosecond spin domain formation in polycrystalline halide perovskite films

Photoinduced spin-charge interconversion in semiconductors with spin-orbit coupling could provide a route to optically addressable spintronics without the use of external magnetic fields. However, in structurally disordered polycrystalline semiconductors, which are being widely explored for device applications, the presence and role of spin-associated charge currents remains unclear. Here, using femtosecond circular-polarization-resolved pump-probe microscopy on polycrystalline halide perovskite thin films, we observe the photoinduced ultrafast formation of spin domains on the micrometre scale formed through lateral spin currents. Micrometre-scale variations in the intensity of optical second-harmonic generation and vertical piezoresponse suggest that the spin-domain formation is driven by the presence of strong local inversion symmetry breaking via structural disorder. We propose that this leads to spatially varying Rashba-like spin textures that drive spin-momentum-locked currents, leading to local spin accumulation. Ultrafast spin-domain formation in polycrystalline halide perovskite films provides an optically addressable platform for nanoscale spin-device physics.

Spin-mediated shear oscillators in a van der Waals antiferromagnet

Understanding how microscopic spin configuration gives rise to exotic properties at the macroscopic length scale has long been pursued in magnetic materials1-5. One seminal example is the Einstein-de Haas effect in ferromagnets1,6,7, in which angular momentum of spins can be converted into mechanical rotation of an entire object. However, for antiferromagnets without net magnetic moment, how spin ordering couples to macroscopic movement remains elusive. Here we observed a seesaw-like rotation of reciprocal lattice peaks of an antiferromagnetic nanolayer film, whose gigahertz structural resonance exhibits more than an order-of-magnitude amplification after cooling below the Néel temperature. Using a suite of ultrafast diffraction and microscopy techniques, we directly visualize this spin-driven rotation in reciprocal space at the nanoscale. This motion corresponds to interlayer shear in real space, in which individual micro-patches of the film behave as coherent oscillators that are phase-locked and shear along the same in-plane axis. Using time-resolved optical polarimetry, we further show that the enhanced mechanical response strongly correlates with ultrafast demagnetization, which releases elastic energy stored in local strain gradients to drive the oscillators. Our work not only offers the first microscopic view of spin-mediated mechanical motion of an antiferromagnet but it also identifies a new route towards realizing high-frequency resonators8,9 up to the millimetre band, so the capability of controlling magnetic states on the ultrafast timescale10-13 can be readily transferred to engineering the mechanical properties of nanodevices.

Influence of the NiFe/Cu/NiFe Structure Dimensions and Position in External Magnetic Field on Resistance Changes under the Magnetoresistance Effect

The subject of this work is NiFe/Cu/NiFe thin-film structures made by magnetron sputtering and showing the phenomenon of magnetoresistance. Three series of samples differing in spatial dimensions and thickness of the Cu spacer were produced. During the sputtering process, an external magnetic field of approx. 10 mT was applied to the substrate. Measurements of the resistance of the structures were carried out in the field of neodymium magnets in three different positions of the sample in relation to the direction of the field. The measurements allowed us to indicate in which position the structures of different series achieved the greatest changes in resistance. For each of the three series of layer systems, the nature of changes in the determined coefficient of giant magnetoresistance ΔR/R remained similar, while for the series with the smallest copper thickness (2.5 nm), the coefficient reached the highest value of about 2.7‱. In addition, impedance measurements were made for the structures of each series in the frequency range from 100 Hz to 100 kHz. For series with a thinner copper layer, a decrease in impedance values was observed in the 10-100 kHz range.

Improvement of image-type very-low-energy-electron-diffraction spin polarimeter

Spin- and angle-resolved photoemission spectroscopy (SARPES) with high efficiency and resolution plays a crucial role in exploring the fine spin-resolved band structures of quantum materials. Here, we report the performance of the SARPES instrument with a second-generation home-made multichannel very-low-energy-electron-diffraction spin polarimeter. Its energy and angular resolutions achieve 7.2 meV and 0.52°, respectively. We present the results of SARPES measurements of Bi(111) film to demonstrate its performance. Combined with the density functional theory calculations, the spin polarization of the bulk states was confirmed by the spin-layer locking caused by the local inversion asymmetry. The surface states at a binding energy of 0.77 eV are found with 1.0 ± 0.11 spin polarization. Better resolutions and stability compared with the first-generation one provide a good platform to investigate the spin-polarized electronic states in materials.

Magnetic nanoprobe-enabled lateral flow assays: recent advances

In recent years, magnetic nanoparticle sensor technologies have attracted considerable interest in the point-of-care-testing (POCT) field, especially in lateral flow immunoassays (LFIAs). Although the visual signal of magnetic nanoparticles is reduced during an inspection, it can be compensated for by magnetic induction, and detection results can be quantified by magnetic sensors. Sensors that use magnetic nanoparticles (MNPs) as markers can overcome the high background noise of complex samples. In this study, MNP signal detection strategies are described from the perspectives of magnetoresistance, magnetic flux, frequency mixing technology, and magnetic permeability, and the principles and development of each technology are introduced in detail. Typical applications of magnetic nanoparticle sensor technologies are introduced. By describing the advantages and limitations of different sensing strategies, we highlight the development and improvement directions of different sensing strategies. In general, the future development of magnetic nanoparticle sensor technologies will be toward intelligent, convenient, and mobile high-performance detection equipment.

Graphene Spin Valves for Spin Logic Devices

An alternative to charge-based electronics identifies the spin degree of freedom for information communication and processing. The long spin-diffusion length in graphene at room temperature demonstrates its ability for highly scalable spintronics. The development of the graphene spin valve (SV) has inspired spin devices in graphene including spin field-effect transistors and spin majority logic gates. A comprehensive picture of spin transport in graphene SVs is required for further development of spin logic. This review examines the advances in graphene SVs and their role in the development of spin logic devices. Different transport and scattering mechanisms in charge and spin are discussed. Furthermore, the on/off switching energy between graphene SVs and charge-based FETs is compared to highlight their prospects for low-power devices. The challenges and perspectives that need to be addressed for the future development of spin logic devices are then outlined.

Unconventional Giant "Magnetoresistance" in Bosonic Semiconducting Diamond Nanorings

The emergence of superconductivity in doped insulators such as cuprates and pnictides coincides with their doping-driven insulator-metal transitions. Above the critical doping threshold, a metallic state sets in at high temperatures, while superconductivity sets in at low temperatures. An unanswered question is whether the formation of Cooper pairsin a well-established metal will inevitably transform the host material into a superconductor, as manifested by a resistance drop. Here, this question is addressed by investigating the electrical transport in nanoscale rings (full loops) and half loops manufactured from heavily boron-doped diamond. It is shown that in contrast to the diamond half-loops (DHLs) exhibiting a metal-superconductor transition, the diamond nanorings (DNRs) demonstrate a sharp resistance increase up to 430% and a giant negative "magnetoresistance" below the superconducting transition temperature of the starting material. The finding of the unconventional giant negative "magnetoresistance", as distinct from existing categories of magnetoresistance, that is, the conventional giant magnetoresistance in magnetic multilayers, the colossal magnetoresistance in perovskites, and the geometric magnetoresistance in semiconductor-metal hybrids, reveals the transformation of the DNRs from metals to bosonic semiconductors upon the formation of Cooper pairs. DNRs like these could be used to manipulate Cooper pairs in superconducting quantum devices.

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices' radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV-vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

Magnetic order and magnetic anisotropy in two-dimensional ilmenenes

Iron ilmenene is a new two-dimensional material that has recently been exfoliated from the naturally occurring iron titanate found in ilmenite ore, a material that is abundant on the earth's surface. In this work, we theoretically investigate the structural, electronic and magnetic properties of 2D transition-metal-based ilmenene-like titanates. The study of magnetic order reveals that these ilmenenes usually present intrinsic antiferromagnetic coupling between the 3d magnetic metals decorating both sides of the Ti-O layer. Furthermore, the ilmenenes based on late 3d brass metals, such as CuTiO₃ and ZnTiO₃, become ferromagnetic and spin compensated, respectively. Our calculations which include spin-orbit coupling reveal that the magnetic ilmenenes have large magnetocrystalline anisotropy energies when the 3d shell departs from being either filled or half-filled, with their spin orientation being out-of-plane for elements below half-filling of 3d states and in-plane above. These interesting magnetic properties of ilmenenes make them useful for future spintronic applications because they could be synthesized as already realized in the iron case.