Room-temperature reversible spin Hall effect

Research on Quantum Materials and Quantum Technology at RIKEN

RIKEN covers fundamental research on physics, chemistry, biology, life and medical science, information and mathematical science, and engineering. Here, we outline research activities on quantum materials and quantum technology that include topological and correlated materials, spintronics, nanoscale materials and structures, atomic and quantum optics, and quantum computing.

Orbital Angular Momentum Correlated Charge to Spin Conversion in Metallic Antiferromagnet

Current-induced spin-orbit torque (SOT) allows efficient electrical manipulation on magnetization in spintronic devices. Maximizing the SOT efficiency is a key goal that is pursued via increasing the net spin generation and accumulation. However, spin transport in antiferromagnets is seriously restricted due to the strong antiferromagnetic coupling, which blocks the development of antiferromagnetic-based devices. Here, a significant enhancement of SOT efficiency in Ir20Mn80 (IrMn)-based heterostructure associated with the orbital effect of naturally oxidized Cu (Cu*) bottom layer is reported. Considering the weak spin-orbit coupling of Cu*, the enhancement results from an orbital current generated from charge current at the Cu*/IrMn interface that contributes to spin current in the IrMn layer due to the strong spin-orbit coupling. The SOT efficiency variation with IrMn thickness reveals the process of orbital angular momentum (OAM) transportation and conversion. Moreover, the contribution of orbital current is verified by the critical current density decreasing of SOT-driven magnetization switching in Cu*/IrMn/[Co/Pt]3 heterostructure. This study opens a path to design high-efficient SOT-based spintronic devices combining the advantages of OAM and metallic antiferromagnets.

Control of Charge-Spin Interconversion in van der Waals Heterostructures with Chiral Charge Density Waves

A charge density wave (CDW) represents an exotic state in which electrons are arranged in a long-range ordered pattern in low-dimensional materials. Although the understanding of the fundamental character of CDW is enriched after extensive studies, its practical application remains limited. Here, an unprecedented demonstration of a tunable charge-spin interconversion (CSI) in graphene/1T-TaS2 van der Waals heterostructures is shown by manipulating the distinct CDW phases in 1T-TaS2. Whereas CSI from spins polarized in all three directions is observed in the heterostructure when the CDW phase does not show commensurability, the output of one of the components disappears, and the other two are enhanced when the CDW phase becomes commensurate. The experimental observation is supported by first-principles calculations, which evidence that chiral CDW multidomains in the heterostructure are at the origin of the switching of CSI. The results uncover a new approach for on-demand CSI in low-dimensional systems, paving the way for advanced spin-orbitronic devices.

Persistent magnetic coherence in magnets

When excited, the magnetization in a magnet precesses around the field in an anticlockwise manner on a timescale governed by viscous magnetization damping, after which any information carried by the initial actuation seems to be lost. This damping appears to be a fundamental bottleneck for the use of magnets in information processing. However, here we demonstrate the recall of the magnetization-precession phase after times that exceed the damping timescale by two orders of magnitude using dedicated two-colour microwave pump-probe experiments for a Y3Fe5O12 microstructured film. Time-resolved magnetization state tomography confirms the persistent magnetic coherence by revealing a double-exponential decay of magnetization correlation. We attribute persistent magnetic coherence to a feedback effect, that is, coherent coupling of the uniform precession with long-lived excitations at the minima of the spin-wave dispersion relation. Our finding liberates magnetic systems from the strong damping in nanostructures that has limited their use in coherent information storage and processing.

Picosecond Spin Current Generation from Vicinal Metal-Antiferromagnetic Insulator Interfaces

We report the picosecond spin current generation from the interface between a heavy metal and a vicinal antiferromagnet insulator Cr_{2}O_{3} by laser pulses at room temperature and zero magnetic field. It is converted into a detectable terahertz emission in the heavy metal via the inverse spin Hall effect. The vicinal interfaces are apparently the source of the picosecond spin current, as evidenced by the proportional terahertz signals to the vicinal angle. We attribute the origin of the spin current to the transient magnetic moment generated by an interfacial nonlinear magnetic-dipole difference-frequency generation. We propose a model based on the in-plane inversion symmetry breaking to quantitatively explain the terahertz intensity with respect to the angles of the laser polarization and the film azimuth. Our work opens new opportunities in antiferromagnetic and ultrafast spintronics by considering symmetry breaking.

Efficient Thermo-Spin Conversion in van der Waals Ferromagnet FeGaTe

Recent discovery of 2D van der Waals magnetic materials has spurred progress in developing advanced spintronic devices. A central challenge lies in enhancing the spin-conversion efficiency for building spin-logic or spin-memory devices. Here, the anomalous Hall and Nernst effects are systematically investigated to uncover significant spin-conversion effects in above-room-temperature van der Waals ferromagnet FeGaTe with perpendicular magnetic anisotropy. The anomalous Hall effect demonstrates an efficient electric spin-charge conversion with a notable spin Hall angle of over 6%. In addition, the anomalous Nernst effect produces a significant transverse voltage at room temperature without a magnetic field, displaying unique temperature dependence with a maximum transverse Seebeck coefficient of 440 nV K-1 and a Nernst angle of ≈62%. Such an innovative thermoelectric signal arises from the efficient thermo-spin conversion effect, where the up-spin and down-spin electrons move in opposite directions under a temperature gradient. The present study highlights the potential of FeGaTe to enhance thermoelectric devices through efficient thermo-spin conversion without the need for a magnetic field.

Room temperature chirality switching and detection in a helimagnetic MnAu2 thin film

Helimagnetic structures, in which the magnetic moments are spirally ordered, host an internal degree of freedom called chirality corresponding to the handedness of the helix. The chirality seems quite robust against disturbances and is therefore promising for next-generation magnetic memory. While the chirality control was recently achieved by the magnetic field sweep with the application of an electric current at low temperature in a conducting helimagnet, problems such as low working temperature and cumbersome control and detection methods have to be solved in practical applications. Here we show chirality switching by electric current pulses at room temperature in a thin-film MnAu2 helimagnetic conductor. Moreover, we have succeeded in detecting the chirality at zero magnetic fields by means of simple transverse resistance measurement utilizing the spin Berry phase in a bilayer device composed of MnAu2 and a spin Hall material Pt. These results may pave the way to helimagnet-based spintronics.

Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure

The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While SHE typically occurs in non-magnetic materials and is time-reversal even, exploring time-reversal-odd (T-odd) SHE, which couples SHE to magnetization in ferromagnetic materials, offers a new charge-spin conversion mechanism with new functionalities. Here, we report the observation of giant T-odd SHE in Fe3GeTe2/MoTe2 van der Waals heterostructure, representing a previously unidentified interfacial magnetic spin Hall effect (interfacial-MSHE). Through rigorous symmetry analysis and theoretical calculations, we attribute the interfacial-MSHE to a symmetry-breaking induced spin current dipole at the vdW interface. Furthermore, we show that this linear effect can be used for implementing multiply-accumulate operations and binary convolutional neural networks with cascaded multi-terminal devices. Our findings uncover an interfacial T-odd charge-spin conversion mechanism with promising potential for energy-efficient in-memory computing.

Chirality-Induced Selectivity of Phonon Angular Momenta in Chiral Quartz Crystals

A generation, propagation, and transfer of phonon angular momenta are examined on thermal transport in chiral insulative and diamagnetic crystals of α-quartz. We found that thermally driven phonons carry chirality-dependent angular momenta in the quartz crystals and they could be extracted from the quartz as a spin signal. Namely, chirality-induced selectivity of phonon angular momenta is realized in the chiral quartz. We argue that chiral phonons available in chiral materials could be a key element in triggering or enhancing chirality-induced spin selectivity with robust spin polarization and long-range spin transport found in various chiral materials.

Observation of Terahertz Spin Hall Conductivity Spectrum in GaAs with Optical Spin Injection

We report the first observation of the spin Hall conductivity spectrum in GaAs at room temperature. Our terahertz polarimetry with a precision of several μrads resolves the Faraday rotation of terahertz pulses arising from the inverse spin Hall effect of optically injected spin-polarized electrons. The obtained spin Hall conductivity spectrum exhibits an excellent quantitative agreement with theory, demonstrating a crossover in the dominant origin from impurity scattering in the dc regime to the intrinsic Berry-curvature mechanism in the terahertz regime. Our spectroscopic technique opens a new pathway to analyze anomalous transports related to spin, valley, or orbital degrees of freedom.

Ultrafast THz probing of nonlocal orbital current in transverse multilayer metallic heterostructures

THz generation from femtosecond photoexcited spintronic heterostructures has become a versatile tool for investigating ultrafast spin-transport and transient charge-current in a non-contact and non-invasive manner. The equivalent effect from the orbital degree of freedom is still in the primitive stage. Here, we experimentally demonstrate orbital-to-charge current conversion in metallic heterostructures, consisting of a ferromagnetic layer adjacent to either a light or a heavy metal layer, through detection of the emitted THz pulses. Our temperature-dependent experiments help to disentangle the orbital and spin components that are manifested in the respective Hall-conductivities, contributing to THz emission. NiFe/Nb shows the strongest inverse orbital Hall effect with an experimentally extracted value of effective intrinsic Hall-conductivity, [Formula: see text], while CoFeB/Pt shows maximum contribution from the inverse spin Hall effect. In addition, we observe a nearly ten-fold enhancement in the THz emission due to pronounced orbital-transport in W-insertion heavy metal layer in CoFeB/W/Ta heterostructure as compared to CoFeB/Ta bilayer counterpart.

Room-Temperature van der Waals Ferromagnet Switching by Spin-Orbit Torques

The emerging wide varieties of the van der Waals (vdW) magnets with atomically thin and smooth interfaces hold great promise for next-generation spintronic devices. However, due to the lower Curie temperature of the vdW ferromagnets than room temperature, electrically manipulating its magnetization at room temperature has not been realized. In this work, it is demonstrated that the perpendicular magnetization of the vdW ferromagnet Fe3 GaTe2 can be effectively switched at room temperature in the Fe3 GaTe2 /Pt bilayer by spin-orbit torques (SOTs) with a relatively low current density of 1.3 × 107 A cm-2 . Moreover, the high SOT efficiency of ξDL ≈ 0.28 is quantitatively determined by harmonic measurements, which is higher than those in Pt-based heavy metal/conventional ferromagnet devices. The findings of room-temperature vdW ferromagnet switching by SOTs provide a significant basis for the development of vdW-ferromagnet-based spintronic applications.

Manipulation of Spin-Orbit Torque in Tungsten Oxide/Manganite Heterostructure by Ionic Liquid Gating and Orbit Engineering

Spin-orbit coupling (SOC) is the interaction between electron's spin and orbital motion, which could realize a charge-to-spin current conversion and enable an innovative method to switch the magnetization by spin-orbit torque (SOT). Varied techniques have been developed to manipulate and improve the SOT, but the role of the orbit degree of freedom, which should have a crucial bearing on the SOC and SOT, is still confusing. Here, we find that the charge-to-spin current conversion and SOT in W3O8-δ/(La, Sr)MnO3 could be produced or eliminated by ionic liquid gating. Through tuning the preferential occupancy of Mn/W-d electrons from the in-plane (dx2-y2) to out-of-plane (d3z2-r2) orbit, the SOT damping-like field efficiency is nearly doubled due to the enhanced spin Hall effect and interfacial Rashba-Edelstein effect. These findings not only offer intriguing opportunities to control the SOT for high-efficient spintronic devices but also could be a fundamental step toward spin-orbitronics in the future.

Phase biasing of a Josephson junction using Rashba-Edelstein effect

A charge-current-induced shift in the spin-locked Fermi surface leads to a non-equilibrium spin density at a Rashba interface, commonly known as the Rashba-Edelstein effect. Since this is an intrinsically interfacial property, direct detection of the spin moment is difficult. Here we demonstrate that a planar Josephson Junction, realized by placing two closely spaced superconducting electrodes over a Rashba interface, allows for a direct detection of the spin moment as an additional phase in the junction. Asymmetric Fraunhofer patterns obtained for Nb-(Pt/Cu)-Nb nano-junctions, due to the locking of Rashba-Edelstein spin moment to the flux quantum in the junction, provide clear signatures of this effect. This simple experiment offers a fresh perspective on direct detection of spin polarization induced by various spin-orbit effects. In addition, this platform also offers a magnetic-field-controlled phase biasing mechanism in conjunction with the Rashba-Edelstein spin-orbit effect for superconducting quantum circuits.

High Efficiency and Flexible Modulation of Spintronic Terahertz Emitters in Synthetic Antiferromagnets

Spintronic terahertz (THz) emitters based on synthetic antiferromagnets (SAFs) of FM1/Ru/FM2 (FM: ferromagnet) have shown great potential for achieving coherent superposition and significant THz power enhancement due to antiparallel magnetization alignment. However, key issues regarding the effects of interlayer exchange coupling and net magnetization on THz emissions remain unclear, which will inevitably hinder the performance improvement and practical application of THz devices. In this work, we have investigated the femtosecond laser-induced THz emission in Pt (3)/CoFe (3)/Ru (tRu = 0-3.5)/CoFe (tCoFe = 1.5-10)/Pt (3) (in units of nm) films with compensated and uncompensated magnetic moments. Antiferromagnetic (AF) coupling occurs in the Ru thickness ranges of 0.2-1.1 and 1.9-2.3 nm, with the first peak (tRu = 0.4 nm) of the AF coupling field (Hex) significantly higher than that of the second peak (2.0 nm). Rather high THz amplitude is found for the samples with strong AF coupling. Nevertheless, despite the same remanence ratio of zero, the THz amplitude for the symmetric SAF films declines significantly as the tRu decreases from 0.8 to 0.4 nm, which is mainly ascribed to the noncolinear magnetization vectors due to the increased biquadratic coupling term. Specifically, we demonstrate that an asymmetric SAF structure with a dominant FM layer is more favored than the completely compensated one, which could generate significantly enhanced THz electric field with well-controlled polarity and intensity. In addition, as the temperature decreases, the THz emission intensity increases for the SAF samples of tRu = 0.9 nm with negligible biquadratic coupling, which is contrary to the decreasing trend of the tRu = 0.4 nm sample and has been attributed to the greatly enhanced Hex.

Intrinsic Magnetic Proximity Effect at the Atomically Sharp Interface of CoxFe3-xO4/Pt Grown by Molecular Beam Epitaxy

Co_xFe_3-xO₄(CFO)/Pt bilayers prepared by molecular beam epitaxy were investigated for the anomalous Hall effect and X-ray magnetic circular dichroism (XMCD). We found that the anomalous Hall effect originates from a magnetic proximity effect at the CFO/Pt interface. The XMCD signal in the Pt L-edge was obtained only for the sample deposited at 600 °C, indicating that the magnetic proximity effect is sensitive to the interface structure. Transmission electron microscopy images of the CFO/Pt interface and XMCD measurements of Co and Fe L-edges do not provide direct evidence for interfacial atomic diffusion or alloying. In summary, these results suggest that the magnetic proximity effect is robust for transport properties, such as the anomalous Hall effect, while the induced magnetic moment depends on slight differences in the interfacial structure, such as the presence or absence of interfacial oxygen ions.

Observation of the orbital Hall effect in a light metal Ti

The orbital Hall effect¹ refers to the generation of electron orbital angular momentum flow transverse to an external electric field. Contrary to the common belief that the orbital angular momentum is quenched in solids, theoretical studies^2,3 predict that the orbital Hall effect can be strong and is a fundamental origin of the spin Hall effect^4-7 in many transition metals. Despite the growing circumstantial evidence^8-11, its direct detection remains elusive. Here we report the magneto-optical observation of the orbital Hall effect in the light metal titanium (Ti). The Kerr rotation by the orbital magnetic moment accumulated at Ti surfaces owing to the orbital Hall current is measured, and the result agrees with theoretical calculations semi-quantitatively and is supported by the orbital torque¹² measurement in Ti-based magnetic heterostructures. This result confirms the orbital Hall effect and indicates that the orbital angular momentum is an important dynamic degree of freedom in solids. Moreover, this calls for renewed studies of the orbital effect on other degrees of freedom such as spin^2,3,13,14, valley^15,16, phonon^17-19 and magnon^20,21 dynamics.

Enhanced Spin Current in Ni81 Fe19 /Cu-CuOx Bilayer with Top and Sideways Oxidization

Generation and manipulation of spin current are the cores of spintronic devices, which are intensely pursued. Heavy metals with strong spin-orbit coupling are commonly used for the generation of spin current, but are incompatible with the mass production of devices, and the polarization of spin current is limited to be in-plane. Here, it is shown that the spin current with strong out-of-plane polarization component can be generated and transmitted in Ni₈₁ Fe₁₉ /Cu-CuO_x bilayer with sideways and top oxidizations. The charge-to-spin current conversion efficiency can be enhanced through the spin currents consisting of both out-of-plane polarization (σ_z ) and in-plane polarization (σ_y ) induced by spin-vorticity coupling. Such a spin current is demonstrated to be closely related to the lateral oxidization gradient and can be controlled by changing the temperatures and times of annealing. The finding here provides a novel degree of freedom to produce and control the spin current in spintronic devices.

Electrical Manipulation of Orbital Current Via Oxygen Migration in Ni81 Fe19 /CuOx /TaN Heterostructure

The orbital Hall effect and the interfacial Rashba effect provide new approaches to generate orbital current and spin-orbit torque (SOT) efficiently without the use of heavy metals. However, achieving efficient dynamic control of orbital current and SOT in light metal oxides has proven challenging. In this study, it is demonstrated that a sizable magnetoresistance effect related to orbital current and SOT can be observed in Ni₈₁ Fe₁₉ /CuO_x /TaN heterostructures with various CuO_x oxidization concentrations. The ionic liquid gating induces the migration of oxygen ions, which modulates the oxygen concentration at the Ni₈₁ Fe₁₉ /CuO_x interface, leading to reversible manipulation of the magnetoresistance effect and SOT. The existence of a thick TaN capping layer allows for sophisticated internal oxygen ion reconstruction in the CuO_x layer, rather than conventional external ion exchange. These results provide a method for the reversible and dynamic manipulation of the orbital current and SOT generation efficiency, thereby advancing the development of spin-orbitronic devices through ionic engineering.

Spin Hall effect from bipolaron dynamics in organics

Using an extended Su-Schrieffer-Heeger model and a nonadiabatic dynamics method, we investigate the dynamics of bipolarons in coupled nondegenerate organic chains including the spin-orbit coupling and interchain coupling. By tracing the time-dependent evolution of the charges and spins in each chain, an obvious oscillating spin Hall effect (SHE) from the bipolaron transport is revealed. The results are compared with that from polaron-dominated transport. A reduction of amplitude and an increase of oscillating frequency are observed for the SHE from the bipolaron transport. The mechanism is attributed to the enhanced skew scattering off the larger transient deformations of the chains in the case of the bipolaron. Spectrum analysis by fast Fourier transform of the SHE signal demonstrates a distinct shift of two characteristic peaks to a higher onset frequency compared to the polaron transport. The charge-spin conversion efficiency is also compared, where a larger conversion efficiency is obtained from the bipolaron transport due to the lower saturated velocity. The effects of the strength of the electric field and the interactions are discussed. This work reveals the role of the bipolaron in organic SHE and provides a feasible way to achieve larger conversion efficiency by controlling the species of carriers with the concentration of the dopant.

Antiferromagnetic Inverse Spin Hall Effect

The inverse spin Hall effect (ISHE) is one of the accessible and reliable methods to detect spin current. The magnetization-dependent inverse spin Hall effect has been observed in magnets, expanding the dimension for spin-to-charge conversion. However, antiferromagnetic Néel-vector-dependent ISHE, which has been long time highly pursued, is still elusive. Here, ISHE in Mn₂ Au/[Co/Pd] heterostructures is investigated by terahertz emission and spin Seebeck effect measurements, where [Co/Pd] possesses perpendicular magnetic anisotropy for out-of-plane polarized spin current generation and Mn₂ Au is a collinear antiferromagnet for the spin-to-charge conversion. The out-of-plane spin polarization (σ_z ) is rotated toward in-plane by the Néel vectors in Mn₂ Au, then the spin current is converted into charge current at two staggered spin sublattices. The ISHE signal is much stronger when the converted charge current is parallel to the Néel vector compared with its orthogonal counterpart. The Néel vector and resultant ISHE signals, which is termed as antiferromagnetic inverse spin Hall effect, can be switched. The finding not only adds a new member to the Hall effect family, but also makes antiferromagnetic spintronics more flexible.

Observation of Spin-Splitter Torque in Collinear Antiferromagnetic RuO_{2}

The spin-splitter effect is theoretically predicted to generate an unconventional spin current with x- and z- spin polarization via the spin-split band in antiferromagnets. The generated torque, namely, spin-splitter torque, is effective for the manipulation of magnetization in an adjacent magnetic layer without an external magnetic field for spintronic devices such as MRAM. Here, we study the generation of torque in collinear antiferromagnetic RuO_{2} with (100), (101), and (001) crystal planes. Next we find all x-, y-, and z-polarized spin currents depending on the Néel vector direction in RuO_{2}(101). For RuO_{2}(100) and (001), only y-polarized spin current was present, which is independent of the Néel vector. Using the z-polarized spin currents, we demonstrate field-free switching of the perpendicular magnetized ferromagnet at room temperature. The spin-splitter torque generated from RuO_{2} is verified to be useful for the switching phenomenon and paves the way for a further understanding of the detailed mechanism of the spin-splitter effect and for developing antiferromagnetic spin-orbitronics.

Spin Hall Magnetoresistance Effect from a Disordered Interface

The spin Hall magnetoresistance (SMR) emerged as a reference tool to investigate the magnetic properties of materials with an all-electrical setup. Its sensitivity to the magnetization of thin films and surfaces may turn it into a valuable technique to characterize van der Waals magnetic materials, which support long-range magnetic order in atomically thin layers. However, realistic surfaces can be affected by defects and disorder, which may result in unexpected artifacts in the SMR, rather than the sole appearance of electrical noise. Here, we study the SMR response of heterostructures combining a platinum (Pt) thin film with the van der Waals antiferromagnet MnPSe₃ and observe a robust SMR-like signal, which turns out to originate from the presence of strong interfacial disorder in the system. We use transmission electron microscopy (TEM) to characterize the interface between MnPSe₃ and Pt, revealing the formation of a few nanometer-thick platinum-chalcogen amorphous layer. The analysis of the transport and TEM measurements suggests that the signal arises from a disordered magnetic system formed at the Pt/MnPSe₃ interface, washing out the interaction between the spins of the Pt electrons and the MnPSe₃ magnetic lattice. Our results show that the damaged interfaces can yield an important contribution to SMR, questioning a widespread assumption on the role of disorder in such measurements.

Dissipationless Spin-Charge Conversion in Excitonic Pseudospin Superfluid

Spin-charge conversion by the inverse spin Hall effect or inverse Rashba-Edelstein effect is prevalent in spintronics but dissipative. We propose a dissipationless spin-charge conversion mechanism by an excitonic pseudospin superfluid in an electron-hole double-layer system. Magnetic exchange fields lift singlet-triplet degeneracy of interlayer exciton levels in the double-layer system. Condensation of the singlet-triplet hybridized excitons breaks both a U(1) gauge symmetry and a pseudospin rotational symmetry around the fields, leading to spin-charge coupled superflow in the system. We demonstrate the mechanism by deriving spin-charge coupled Josephson equations for the excitonic superflow from a coupled quantum-dot model.

Magneto-Electronic Hydrogen Gas Sensors: A Critical Review

Devices enabling early detection of low concentrations of leaking hydrogen and precision measurements in a wide range of hydrogen concentrations in hydrogen storage systems are essential for the mass-production of fuel-cell vehicles and, more broadly, for the transition to the hydrogen economy. Whereas several competing sensor technologies are potentially suitable for this role, ultra-low fire-hazard, contactless and technically simple magneto-electronic sensors stand apart because they have been able to detect the presence of hydrogen gas in a range of hydrogen concentrations from 0.06% to 100% at atmospheric pressure with the response time approaching the industry gold standard of one second. This new kind of hydrogen sensors is the subject of this review article, where we inform academic physics, chemistry, material science and engineering communities as well as industry researchers about the recent developments in the field of magneto-electronic hydrogen sensors, including those based on magneto-optical Kerr effect, anomalous Hall effect and Ferromagnetic Resonance with a special focus on Ferromagnetic Resonance (FMR)-based devices. In particular, we present the physical foundations of magneto-electronic hydrogen sensors and we critically overview their advantages and disadvantages for applications in the vital areas of the safety of hydrogen-powered cars and hydrogen fuelling stations as well as hydrogen concentration meters, including those operating directly inside hydrogen-fuelled fuel cells. We believe that this review will be of interest to a broad readership, also facilitating the translation of research results into policy and practice.

Spin-Polarized Fractional Corner Charges and Their Photonic Realization

We demonstrate that a spin degree of freedom can introduce additional texture to higher order topological insulators (HOTIs), manifesting in novel topological invariants and phase transitions. Spin-polarized mid-gap corner states of various multiplicities are predicted for different HOTI phases, and novel bulk-boundary correspondence principles are defined based on bulk invariants such as total and spin corner charge. Those are shown to be robust to spin-flipping perturbations. Photonic realizations of spin-linked topological phases are demonstrated in engineered systems using pseudospin.

Generating Pure Spin Current in Heterojunction Organic Solar Cells

We propose a mechanism for generating pure spin current in heterojunction organic solar cells, with the donor and acceptor both being degenerate ground-state polymers; thus, solitons can be formed. This mechanism contains the following steps: (i) the donor is photoexcited to create the electron-hole (e-h) pairs; (ii) the excited electrons are transferred to the acceptor; (iii) the net charges in the donor and acceptor are evolved into the localized charged solitons; (iv) the intermolecule bias is applied to drive the transferred electrons back to donor, and concomitantly, charged solitons are converted to neutral solitons. Here, the on-site Coulomb interaction plays an important role in ensuring the neutral solitons' spins in the donor and acceptor are oppositely polarized. Because spins are separated between the donor and acceptor without any charge separations, pure spin current can be formed. Our mechanism opens a new avenue for exploring potential organic spintronic devices.

Effect of seed layer thickness on the Ta crystalline phase and spin Hall angle

Heavy metal-ferromagnet bilayer structures have attracted great research interest for charge-to-spin interconversion. In this work, we investigated the effect of the permalloy (Py) seed layer on the tantalum (Ta) polycrystalline phase and its spin Hall angle. Interestingly, for the same deposition rates the crystalline phase of Ta deposited on the Py seed layer strongly depends on the thickness of the seed layer. We observed a phase transition from α-Ta to (α + β)-Ta while increasing the Py seed layer thickness. The observed phase transition is attributed to the strain at the interface between the Py and Ta layers. Ferromagnetic resonance-based spin pumping studies reveal that the spin-mixing conductance in the (α + β)-Ta is relatively higher as compared to the α-Ta. Spin Hall angles of α-Ta and (α + β)-Ta are obtained from the inverse spin Hall effect (ISHE) measurements. The spin Hall angle of (α + β)-Ta is estimated to be θ_SH = -0.15 ± 0.009 which is relatively higher than that of the α-Ta. Our systematic results connecting the phase of Ta with the seed layer and its effect on the efficiency of spin to charge conversion might resolve ambiguities across various literature and open up new functionalities based on the growth process for emerging spintronic devices.

Giant field-like torque by the out-of-plane magnetic spin Hall effect in a topological antiferromagnet

Spin-orbit torques (SOT) enable efficient electrical control of the magnetic state of ferromagnets, ferrimagnets and antiferromagnets. However, the conventional SOT has severe limitation that only in-plane spins accumulate near the surface, whether interpreted as a spin Hall effect (SHE) or as an Edelstein effect. Such a SOT is not suitable for controlling perpendicular magnetization, which would be more beneficial for realizing low-power-consumption memory devices. Here we report the observation of a giant magnetic-field-like SOT in a topological antiferromagnet Mn₃Sn, whose direction and size can be tuned by changing the order parameter direction of the antiferromagnet. To understand the magnetic SHE (MSHE)- and the conventional SHE-induced SOTs on an equal footing, we formulate them as interface spin-electric-field responses and analyzed using a macroscopic symmetry analysis and a complementary microscopic quantum kinetic theory. In this framework, the large out-of-plane spin accumulation due to the MSHE has an inter-band origin and is likely to be caused by the large momentum-dependent spin splitting in Mn₃Sn. Our work demonstrates the unique potential of antiferromagnetic Weyl semimetals in overcoming the limitations of conventional SOTs and in realizing low-power spintronics devices with new functionalities.

Conventional spin-orbit torque (SOT) enables electrical control of in-plane spins, not suitable for perpendicular magnetization. Here, the authors observe a large magnetic-field-like SOT due to a large out-of-plane spin accumulation in topological antiferromagnet Mn₃Sn.

Spin-Seebeck effect and thermoelectric properties of one-dimensional graphene-like nanoribbons periodically embedded with four- and eight-membered rings

The spin-Seebeck effect together with a high spin thermoelectric conversion efficiency has been regarded as one of the core topics in spin caloritronics. In this work, we propose a spin caloritronic device constructed on hydrogen-terminated sawtooth graphene-like nanoribbons periodically embedded with four- and eight-membered rings to investigate the thermal spin currents and thermoelectric properties by using density functional theory combined with the non-equilibrium Green's function method. Our theoretical results show that spin-Seebeck currents are induced by the temperature gradient between two leads due to two isolated spin-up and spin-down transport channels above or below the Fermi level. Besides, the embedded four- and eight-membered rings break the mirror symmetry of graphene-like nanoribbons and increase the phonon scattering to lower the lattice conductivity, contributing to the enhancement of the spin figure of merit. Moreover, the increasing width of the nanoribbons can effectively enhance the spin-Seebeck currents and reduce their threshold temperatures to improve the device performances. These systematic investigations not only give us an in-depth understanding into the realistic spin caloritronic device applications of graphene-like nanoribbons, but also help us to choose feasible routes to improve the spin-Seebeck effect with a high spin figure of merit in nanostructures.

Pure spin photocurrent in non-centrosymmetric crystals: bulk spin photovoltaic effect

Spin current generators are critical components for spintronics-based information processing. In this work, we theoretically and computationally investigate the bulk spin photovoltaic (BSPV) effect for creating DC spin current under light illumination. The only requirement for BSPV is inversion symmetry breaking, thus it applies to a broad range of materials and can be readily integrated with existing semiconductor technologies. The BSPV effect is a cousin of the bulk photovoltaic (BPV) effect, whereby a DC charge current is generated under light. Thanks to the different selection rules on spin and charge currents, a pure spin current can be realized if the system possesses mirror symmetry or inversion-mirror symmetry. The mechanism of BSPV and the role of the electronic relaxation time [Formula: see text] are also elucidated. We apply our theory to several distinct materials, including monolayer transition metal dichalcogenides, anti-ferromagnetic bilayer MnBi2Te4, and the surface of topological crystalline insulator cubic SnTe.

Emergence of Nontrivial Spin Textures in Frustrated Van Der Waals Ferromagnets

In this work, first principles ground state calculations are combined with the dynamic evolution of a classical spin Hamiltonian to study the metamagnetic transitions associated with the field dependence of magnetic properties in frustrated van der Waals ferromagnets. Dynamically stabilized spin textures are obtained relative to the direction of spin quantization as stochastic solutions of the Landau-Lifshitz-Gilbert-Slonczewski equation under the flow of the spin current. By explicitly considering the spin signatures that arise from geometrical frustrations at interfaces, we may observe the emergence of a magnetic skyrmion spin texture and characterize the formation under competing internal fields. The analysis of coercivity and magnetic hysteresis reveals a dynamic switch from a soft to hard magnetic configuration when considering the spin Hall effect on the skyrmion. It is found that heavy metals in capped multilayer heterostructure stacks host field-tunable spiral skyrmions that could serve as unique channels for carrier transport. The results are discussed to show the possibility of using dynamically switchable magnetic bits to read and write data without the need for a spin transfer torque. These results offer insight to the spin transport signatures that dynamically arise from metamagnetic transitions in spintronic devices.

Strain-Mediated Spin-Orbit Torque Enhancement in Pt/Co on Flexible Substrate

Current-induced magnetization switching by spin-orbit torque generated in heavy metals offers an enticing realm for energy-efficient memory and logic devices. The spin Hall efficiency is a key parameter in describing the generation of spin current. Recent findings have reported enhancement of spin Hall efficiency by mechanical strain, but its origin remains elusive. Here, we demonstrate a 45% increase in spin Hall efficiency in the platinum/cobalt (Pt/Co) bilayer, of which 78% of the enhancement was preserved even after the strain was removed. Spin transparency and X-ray magnetic circular dichroism revealed that the enhancement was attributed to a bulk effect in the Pt layer. This was further confirmed by the linear relationship between the spin Hall efficiency and resistivity, which indicates an increase in skew-scattering. These findings shed light on the origin of enhancement and are promising in shaping future utilization of mechanical strain for energy-efficient devices.

Spin-Flip Diffusion Length in 5d Transition Metal Elements: A First-Principles Benchmark

Little is known about the spin-flip diffusion length l_{sf}, one of the most important material parameters in the field of spintronics. We use a density-functional-theory based scattering approach to determine values of l_{sf} that result from electron-phonon scattering as a function of temperature for all 5d transition metal elements. l_{sf} does not decrease monotonically with the atomic number Z but is found to be inversely proportional to the density of states at the Fermi level. By using the same local current methodology to calculate the spin Hall angle Θ_{sH} that characterizes the efficiency of the spin Hall effect, we show that the products ρ(T)l_{sf}(T) and Θ_{sH}(T)l_{sf}(T) are constant.

Spin-Seebeck effect and thermal colossal magnetoresistance in the narrowest zigzag graphene nanoribbons

Device miniaturization and low-energy dissipation are two urgent requirements in future spintronics devices. The narrowest zigzag graphene nanoribbons (ZGNRs), which are composed of just two coupled carbon-atom chains connected with carbon tetragons, are promising candidates that meet both of the above requirements well. Using the first-principles calculations combined with non-equilibrium Green's function approach, thermal spin-dependent transport through this kind of narrow ZGNR is investigated, and several exotic thermal spin-resolved transport properties are uncovered: (i) when an external magnetic field is applied, the ZGNRs are transited from the intrinsic semiconducting to the metallic state, and the thermal colossal magnetoresistance effect occurs with order of magnitudes up to 10⁴ at room temperature; (ii) the thermal spin-dependent currents display a thermal negative differential resistance effect, and a well-defined spin-Seebeck effect (SSE) together with a pure thermal spin current occurs; and (iii) under suitable device temperature settings, a nearly perfect spin-filtering effect occurs in these narrowest ZGNRs. The theoretical results not only uncover the narrowest nanoribbon structures to realize the SSE and other inspiring thermal spin transport features, but also push carbon-based material candidates towards thermoelectric conversion device applications.

Temperature-Dependent Spin Transport and Current-Induced Torques in Superconductor-Ferromagnet Heterostructures

We investigate the injection of quasiparticle spin currents into a superconductor via spin pumping from an adjacent ferromagnetic metal layer. To this end, we use NbN-Ni_{80}Fe_{20}(Py) heterostructures with a Pt spin sink layer and excite ferromagnetic resonance in the Permalloy layer by placing the samples onto a coplanar waveguide. A phase sensitive detection of the microwave transmission signal is used to quantitatively extract the inductive coupling strength between the sample and the coplanar waveguide, interpreted in terms of inverse current-induced torques, in our heterostructures as a function of temperature. Below the superconducting transition temperature T_{c}, we observe a suppression of the dampinglike torque generated in the Pt layer by the inverse spin Hall effect, which can be understood by the changes in spin current transport in the superconducting NbN layer. Moreover, below T_{c} we find a large fieldlike current-induced torque.

A scalable molecule-based magnetic thin film for spin-thermoelectric energy conversion

Spin thermoelectrics, an emerging thermoelectric technology, offers energy harvesting from waste heat with potential advantages of scalability and energy conversion efficiency, thanks to orthogonal paths for heat and charge flow. However, magnetic insulators previously used for spin thermoelectrics pose challenges for scale-up due to high temperature processing and difficulty in large-area deposition. Here, we introduce a molecule-based magnetic film for spin thermoelectric applications because it entails versatile synthetic routes in addition to weak spin-lattice interaction and low thermal conductivity. Thin films of Cr^II[Cr^III(CN)₆], Prussian blue analogue, electrochemically deposited on Cr electrodes at room temperature show effective spin thermoelectricity. Moreover, the ferromagnetic resonance studies exhibit an extremely low Gilbert damping constant ~(2.4 ± 0.67) × 10^-4, indicating low loss of heat-generated magnons. The demonstrated STE applications of a new class of magnet will pave the way for versatile recycling of ubiquitous waste heat.

Simultaneous observation of anti-damping and the inverse spin Hall effect in the La0.67Sr0.33MnO3/Pt bilayer system

Manganites have shown potential in spintronics because they exhibit high spin polarization. Here, by ferromagnetic resonance we have studied the damping properties of La0.67Sr0.33MnO3/Pt bilayers which are prepared by oxide molecular beam epitaxy. The damping coefficient (α) of a La0.67Sr0.33MnO3 (LSMO) single layer is found to be 0.0104. However the LSMO/Pt bilayers exhibit a decrease in α with an increase in Pt thickness. This decrease in the value of α is probably due to high anti-damping like torque. Furthermore, we have investigated the angle dependent inverse spin Hall effect (ISHE) to quantify the spin pumping voltage from other spin rectification effects such as the anomalous Hall effect and anisotropic magnetoresistance. We have observed a high spin pumping voltage (∼20 μV). The results indicate that both anti-damping and spin pumping phenomena occur simultaneously.

Transport phenomena in spin caloritronics

The interconversion between spin, charge, and heat currents is being actively studied from the viewpoints of both fundamental physics and thermoelectric applications in the field of spin caloritronics. This field is a branch of spintronics, which has developed rapidly since the discovery of the thermo-spin conversion phenomenon called the spin Seebeck effect. In spin caloritronics, various thermo-spin conversion phenomena and principles have subsequently been discovered and magneto-thermoelectric effects, thermoelectric effects unique to magnetic materials, have received renewed attention with the advances in physical understanding and thermal/thermoelectric measurement techniques. However, the existence of various thermo-spin and magneto-thermoelectric conversion phenomena with similar names may confuse non-specialists. Thus, in this Review, the basic behaviors, spin-charge-heat current conversion symmetries, and functionalities of spin-caloritronic phenomena are summarized, which will help new entrants to learn fundamental physics, materials science, and application studies in spin caloritronics.

Generation and manipulation of current-induced spin-orbit torques

An emerging field of spintronics, spin-orbitronics, aims to discover novel phenomena and functionalities originating from spin-orbit coupling in solid-state devices. The development of spin-orbitronics promises a fundamental understanding of spin physics in condensed matter, as well as smaller, faster, and far-more energy-efficient spin-based devices. Of particular importance in this field is current-induced spin-orbit torques, which trigger magnetic dynamics by the transfer of angular momentum from an atomic lattice to local magnetization through the spin-orbit coupling. The spin-orbit torque has attracted extensive attention for its fascinating relativistic and quantum mechanical nature, as well as prospective nanoelectronic applications. In this article, we review our studies on the generation and manipulation of current-induced spin-orbit torques.

Independence of the Inverse Spin Hall Effect with the Magnetic Phase in Thin NiCu Films

Large spin Hall angles have been observed in 3d ferromagnets, but their origin, and especially their link with the ferromagnetic order, remain unclear. Here, we investigate the evolution of the inverse spin Hall effect of Ni_{60}Cu_{40} and Ni_{50}Cu_{50} across their Curie temperatures using spin-pumping experiments. We show that the inverse spin Hall effect in these samples is comparable to that of platinum, and that it is insensitive to the magnetic order. These results point toward a Heisenberg localized model of the transition and suggest that the large spin Hall effects in 3d ferromagnets can be independent of the magnetic phase.

Prospect of Spin-Orbitronic Devices and Their Applications

Science, engineering, and medicine ultimately demand fast information processing with ultra-low power consumption. The recently developed spin-orbit torque (SOT)-induced magnetization switching paradigm has been fueling opportunities for spin-orbitronic devices, i.e., enabling SOT memory and logic devices at sub-nano second and sub-picojoule regimes. Importantly, spin-orbitronic devices are intrinsic of nonvolatility, anti-radiation, unlimited endurance, excellent stability, and CMOS compatibility, toward emerging applications, e.g., processing in-memory, neuromorphic computing, probabilistic computing, and 3D magnetic random access memory. Nevertheless, the cutting-edge SOT-based devices and application remain at a premature stage owing to the lack of scalable methodology on the field-free SOT switching. Moreover, spin-orbitronics poises as an interdisciplinary field to be driven by goals of both fundamental discoveries and application innovations, to open fascinating new paths for basic research and new line of technologies. In this perspective, the specific challenges and opportunities are summarized to exert momentum on both research and eventual applications of spin-orbitronic devices.

Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature

We report the observation of current-induced spin polarization, the Rashba-Edelstein effect (REE), and its Onsager reciprocal phenomenon, the spin galvanic effect (SGE), in a few-layer graphene/2H-TaS₂ heterostructure at room temperature. Spin-sensitive electrical measurements unveil full spin-polarization reversal by an applied gate voltage. The observed gate-tunable charge-to-spin conversion is explained by the ideal work function mismatch between 2H-TaS₂ and graphene, which allows for a strong interface-induced Bychkov-Rashba interaction with a spin-gap reaching 70 meV, while keeping the Dirac nature of the spectrum intact across electron and hole sectors. The reversible electrical generation and control of the nonequilibrium spin polarization vector, not previously observed in a nonmagnetic material, are elegant manifestations of emergent two-dimensional Dirac Fermions with robust spin-helical structure. Our experimental findings, supported by first-principles relativistic electronic structure and transport calculations, demonstrate a route to design low-power spin-logic circuits from layered materials.

Rational design principles for giant spin Hall effect in 5d-transition metal oxides

Spin Hall effect (SHE), a mechanism by which materials convert a charge current into a spin current, invokes interesting physics and promises to empower transformative, energy-efficient memory technology. However, fundamental questions remain about the essential factors that determine SHE. Here, we solve this open problem, presenting a comprehensive theory of five rational design principles for achieving giant intrinsic SHE in transition metal oxides. Arising from our key insight regarding the inherently geometric nature of SHE, we demonstrate that two of these design principles are weak crystal fields and the presence of structural distortions. Moreover, we discover that antiperovskites are a highly promising class of materials for achieving giant SHE, reaching SHE values an order of magnitude larger than that reported for any oxide. Additionally, we derive three other design principles for enhancing SHE. Our findings bring deeper insight into the physics driving SHE and could help enhance and externally control SHE values.

Chirality-Induced Spin-Polarized State of a Chiral Crystal CrNb_{3}S_{6}

Chirality-induced spin transport phenomena are investigated at room temperature without magnetic fields in a monoaxial chiral dichalcogenide CrNb_{3}S_{6}. We found that spin polarization occurs in these chiral bulk crystals under a charge current flowing along the principal c axis. Such phenomena are detected as an inverse spin Hall signal which is induced on the detection electrode that absorbs polarized spin from the chiral crystal. The inverse response is observed when applying the charge current into the detection electrode. The signal sign reverses in the device with the opposite chirality. Furthermore, the spin signals are found over micrometer length scales in a nonlocal configuration. Such a robust generation and protection of the spin-polarized state is discussed based on a one-dimensional model with an antisymmetric spin-orbit coupling.

Coexistence of large conventional and planar spin Hall effect with long spin diffusion length in a low-symmetry semimetal at room temperature

The spin Hall effect (SHE) is usually observed as a bulk effect in high-symmetry crystals with substantial spin-orbit coupling (SOC), where the symmetric spin-orbit field imposes a widely encountered trade-off between spin Hall angle (θ_SH) and spin diffusion length (L_sf), and spin polarization, spin current and charge current are constrained to be mutually orthogonal. Here, we report a large θ_SH of 0.32 accompanied by a long L_sf of 2.2 μm at room temperature in a low-symmetry few-layered semimetal MoTe₂, thus identifying it as an excellent candidate for simultaneous spin generation, transport and detection. In addition, we report that longitudinal spin current with out-of-plane polarization can be generated by both transverse and vertical charge current, due to the conventional and a newly observed planar SHE, respectively. Our study suggests that manipulation of crystalline symmetries and strong SOC opens access to new charge-spin interconversion configurations and spin-orbit torques for spintronic applications.

Disorder Dependence of Interface Spin Memory Loss

The discontinuity of a spin-current through an interface caused by spin-orbit coupling is characterized by the spin memory loss (SML) parameter δ. We use first-principles scattering theory and a recently developed local current scheme to study the SML for Au|Pt, Au|Pd, Py|Pt, and Co|Pt interfaces. We find a minimal temperature dependence for nonmagnetic interfaces and a strong dependence for interfaces involving ferromagnets that we attribute to the spin disorder. The SML is larger for Co|Pt than for Py|Pt because the interface is more abrupt. Lattice mismatch and interface alloying strongly enhance the SML that is larger for a Au|Pt than for a Au|Pd interface. The effect of the proximity-induced magnetization of Pt is negligible.

Spin Transport Based on Exchange Coupling in Doped Organic Polymers

We develop a spin diffusion theory based on the exchange mechanism among polarons to understand the organic pure spin current. It is demonstrated that the exchange coupling is strong enough to induce spin transport within the organic layer with impurity concentrations higher than 10¹⁸ cm^-3. By calculating the inverse spin Hall voltage in an organic spin device, we predict that the voltage depends nonmonotonically on the impurity concentration of the organic material. By tuning the doping concentration, one can achieve a maximum inverse spin Hall voltage. Our results not only explain some recent experimental data but also inspire further experimental investigation on pure spin current in organic devices with variable impurity doping.

Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures

Spin-orbit coupling stands as a powerful tool to interconvert charge and spin currents and to manipulate the magnetization of magnetic materials through spin-torque phenomena. However, despite the diversity of existing bulk materials and the recent advent of interfacial and low-dimensional effects, control of this interconversion at room temperature remains elusive. Here, we demonstrate strongly enhanced room-temperature spin-to-charge interconversion in graphene driven by the proximity of WS₂. By performing spin precession experiments in appropriately designed Hall bars, we separate the contributions of the spin Hall and the spin galvanic effects. Remarkably, their corresponding conversion efficiencies can be tailored by electrostatic gating in magnitude and sign, peaking near the charge neutrality point with an equivalent magnitude that is comparable to the largest efficiencies reported to date. Such electric-field tunability provides a building block for spin generation free from magnetic materials and for ultra-compact magnetic memory technologies.

Theory of Current-Induced Angular Momentum Transfer Dynamics in Spin-Orbit Coupled Systems

Motivated by the importance of understanding various competing mechanisms to the current-induced spin-orbit torque on magnetization in complex magnets, we develop a theory of current-induced spin-orbital coupled dynamics in magnetic heterostructures. The theory describes angular momentum transfer between different degrees of freedom in solids, e.g., the electron orbital and spin, the crystal lattice, and the magnetic order parameter. Based on the continuity equations for the spin and orbital angular momenta, we derive equations of motion that relate spin and orbital current fluxes and torques describing the transfer of angular momentum between different degrees of freedom, achieved in a steady state under an applied external electric field. We then propose a classification scheme for the mechanisms of the current-induced torque in magnetic bilayers. We evaluate the sources of torque using density functional theory, effectively capturing the impact of the electronic structure on these quantities. We apply our formalism to two different magnetic bilayers, Fe/W(110) and Ni/W(110), which are chosen such that the orbital and spin Hall effects in W have opposite sign and the resulting spin- and orbital-mediated torques can compete with each other. We find that while the spin torque arising from the spin Hall effect of W is the dominant mechanism of the current-induced torque in Fe/W(110), the dominant mechanism in Ni/W(110) is the orbital torque originating in the orbital Hall effect of the non-magnetic substrate. Thus the effective spin Hall angles for the total torque are negative and positive in the two systems. Our prediction can be experimentally identified in moderately clean samples, where intrinsic contributions dominate. This clearly demonstrates that our formalism is ideal for studying the angular momentum transfer dynamics in spin-orbit coupled systems as it goes beyond the "spin current picture" by naturally incorporating the spin and orbital degrees of freedom on an equal footing. Our calculations reveal that, in addition to the spin and orbital torque, other contributions such as the interfacial torque and self-induced anomalous torque within the ferromagnet are not negligible in both material systems.