1
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Hu L, Li X, Guo X, Xu M, Shi Y, Herve NB, Xiang R, Zhang Q. Electret Modulation Strategy to Enhance the Photosensitivity Performance of Two-Dimensional Molybdenum Sulfide. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59704-59713. [PMID: 38087993 DOI: 10.1021/acsami.3c14836] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Due to the limited light absorption efficiency of atomic thickness layers and the existence of quenching effects, photodetectors solely made of transition metal dichalcogenides (TMDs) have exhibited an unsatisfactory detection performance. In this article, electret/TMD hybridized devices were proposed by vertically coupling a MoS2 channel and the PTFE film, which reveals an optimized photodetection behavior. Negative charges were generated in the PTFE layer through the corona charging method, akin to applying a negative bias on the MoS2 channel in lieu of a traditional voltage-driven back gate. Under a charging voltage of -6 kV, PTFE/MoS2 devices reveal improved photodetection performance (Rhybrid = 67.95A/W versus Ronly = 3.37 A/W, at 470 nm, 1.20 mW cm-2) and faster recovery speed (τd(hybrid) = 2000 ms versus τd(only) = 2900 ms) compared to those bare MoS2 counterparts. The optimal detection performance (2 orders of magnitude) was obtained when the charging voltage was -2 kV, limited by the minimum of the carrier density in MoS2 channels. This study provides an alternative strategy to optimize optoelectronic devices based on the 2D components through non-voltage-driven gating.
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Affiliation(s)
- Lian Hu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xinyu Guo
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Nduwarugira B Herve
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Rong Xiang
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
- School of Mechanical Engineering, Zhejiang University, Hangzhou 310003, China
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2
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Noguchi H, Nakamura Y, Tezuka S, Seki T, Yatsu K, Narimatsu T, Nakata Y, Hayamizu Y. Self-assembled GA-Repeated Peptides as a Biomolecular Scaffold for Biosensing with MoS 2 Electrochemical Transistors. ACS APPLIED MATERIALS & INTERFACES 2023; 15. [PMID: 36892269 PMCID: PMC10037235 DOI: 10.1021/acsami.2c23227] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/29/2022] [Accepted: 02/17/2023] [Indexed: 06/16/2023]
Abstract
Biosensors with two-dimensional materials have gained wide interest due to their high sensitivity. Among them, single-layer MoS2 has become a new class of biosensing platform owing to its semiconducting property. Immobilization of bioprobes directly onto the MoS2 surface with chemical bonding or random physisorption has been widely studied. However, these approaches potentially cause a reduction of conductivity and sensitivity of the biosensor. In this work, we designed peptides that spontaneously align into monomolecular-thick nanostructures on electrochemical MoS2 transistors in a non-covalent fashion and act as a biomolecular scaffold for efficient biosensing. These peptides consist of repeated domains of glycine and alanine in the sequence and form self-assembled structures with sixfold symmetry templated by the lattice of MoS2. We investigated electronic interactions of self-assembled peptides with MoS2 by designing their amino acid sequence with charged amino acids at both ends. Charged amino acids in the sequence showed a correlation with the electrical properties of single-layer MoS2, where negatively charged peptides caused a shift of threshold voltage in MoS2 transistors and neutral and positively charged peptides had no significant effect on the threshold voltage. The transconductance of transistors had no decrease due to the self-assembled peptides, indicating that aligned peptides can act as a biomolecular scaffold without degrading the intrinsic electronic properties for biosensing. We also investigated the impact of peptides on the photoluminescence (PL) of single-layer MoS2 and found that the PL intensity changed sensitively depending on the amino acid sequence of peptides. Finally, we demonstrated a femtomolar-level sensitivity of biosensing using biotinylated peptides to detect streptavidin.
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Affiliation(s)
- Hironaga Noguchi
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Yoshiki Nakamura
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Sayaka Tezuka
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Takakazu Seki
- Department
of Frontier Materials Chemistry, Faculty of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki, Aomori 036-8561, Japan
| | - Kazuki Yatsu
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Takuma Narimatsu
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Yasuaki Nakata
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
| | - Yuhei Hayamizu
- Department
of Materials Science and Engineering, School of Materials and Chemical
Technology, Tokyo Institute of Technology, Tokyo 152-8550, Japan
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3
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Zhao X, Zhou XL, Yang SY, Min Y, Chen JJ, Liu XW. Plasmonic imaging of the layer-dependent electrocatalytic activity of two-dimensional catalysts. Nat Commun 2022; 13:7869. [PMID: 36550149 PMCID: PMC9780338 DOI: 10.1038/s41467-022-35633-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/30/2021] [Accepted: 12/14/2022] [Indexed: 12/24/2022] Open
Abstract
Studying the localized electrocatalytic activity of heterogeneous electrocatalysts is crucial for understanding electrocatalytic reactions and further improving their performance. However, correlating the electrocatalytic activity with the microscopic structure of two-dimensional (2D) electrocatalysts remains a great challenge due to the lack of in situ imaging techniques and methods of tuning structures with atomic precision. Here, we present a general method of probing the layer-dependent electrocatalytic activity of 2D materials in situ using a plasmonic imaging technique. Unlike the existing methods, this approach was used to visualize the surface charge density and electrocatalytic activity of single 2D MoS2 nanosheets, enabling the correlation of layer-dependent electrocatalytic activity with the surface charge density of single MoS2 nanosheets. This work provides insights into the electrocatalytic mechanisms of 2D transition metal dichalcogenides, and our approach can serve as a promising platform for investigating electrocatalytic reactions at the heterogeneous interface, thus guiding the rational design of high-performance electrocatalysts.
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Affiliation(s)
- Xiaona Zhao
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China
| | - Xiao-Li Zhou
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China ,grid.410579.e0000 0000 9116 9901School of Environmental and Biological Engineering, Nanjing University of Science and Technology, Nanjing, 210094 China
| | - Si-Yu Yang
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China
| | - Yuan Min
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China
| | - Jie-Jie Chen
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China
| | - Xian-Wei Liu
- grid.59053.3a0000000121679639Chinese Academy of Sciences Key Laboratory of Urban Pollutant Conversion, Department of Environmental Science and Engineering, University of Science and Technology of China, Hefei, 230026 China ,grid.59053.3a0000000121679639Department of Applied Chemistry, University of Science and Technology of China, Hefei, 230026 China
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4
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Li Y, Dai X, He L, Bu Y, Ao JP. Crystal-reconstructed BiVO 4 semiconductor photoelectrochemical sensor for ultra-sensitive tumor biomarker detection. J Mater Chem B 2022; 10:870-879. [PMID: 35050300 DOI: 10.1039/d1tb02576g] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
In this study, we developed a crystal-reconstructed-BiVO4 aptamer photoelectrochemical (PEC) biosensor by a high-energy laser treatment technique. This biosensor achieves a limit of detection (LOD) (0.82 ag mL-1), linear detection range (1 ag mL-1 to 2 ng mL-1), and resolution ratio (∼18 molecules per mL) for prostate-specific antigen (PSA) tumor biomarker detection. Furthermore, reconstructed surface microstructure and oxygen vacancy doping energy formation after crystal reconstruction induce the stereo-hindrance effect and photogenerated hole energy is reduced during PSA target detection. In this case, a photocurrent inhibition phenomenon for PSA detection is noticed. Based on this photocurrent inversion phenomenon, some dysoxidizable nucleonic acid tumor (miRNA-21) and virus biomarkers (RdRp-COVID) can be detected with a LOD level of ∼10-16 M by linking the corresponding base paring probe on the surface of the crystal-reconstructed photoanode. In addition to high sensitivity, this PEC biosensor presents high detection specificity, stability, and accuracy in clinical verification. Thus, this crystal-reconstructed PEC biosensor shows application potential in the fields of multi-tumor or viral biomarker detection.
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Affiliation(s)
- Yang Li
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Xianying Dai
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Lin He
- Shaanxi Provincial Cancer Hospital, Xi'an, 710061, China
| | - Yuyu Bu
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
| | - Jin-Ping Ao
- Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an, 710071, China.
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5
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Zhao Y, Gobbi M, Hueso LE, Samorì P. Molecular Approach to Engineer Two-Dimensional Devices for CMOS and beyond-CMOS Applications. Chem Rev 2021; 122:50-131. [PMID: 34816723 DOI: 10.1021/acs.chemrev.1c00497] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/27/2022]
Abstract
Two-dimensional materials (2DMs) have attracted tremendous research interest over the last two decades. Their unique optical, electronic, thermal, and mechanical properties make 2DMs key building blocks for the fabrication of novel complementary metal-oxide-semiconductor (CMOS) and beyond-CMOS devices. Major advances in device functionality and performance have been made by the covalent or noncovalent functionalization of 2DMs with molecules: while the molecular coating of metal electrodes and dielectrics allows for more efficient charge injection and transport through the 2DMs, the combination of dynamic molecular systems, capable to respond to external stimuli, with 2DMs makes it possible to generate hybrid systems possessing new properties by realizing stimuli-responsive functional devices and thereby enabling functional diversification in More-than-Moore technologies. In this review, we first introduce emerging 2DMs, various classes of (macro)molecules, and molecular switches and discuss their relevant properties. We then turn to 2DM/molecule hybrid systems and the various physical and chemical strategies used to synthesize them. Next, we discuss the use of molecules and assemblies thereof to boost the performance of 2D transistors for CMOS applications and to impart diverse functionalities in beyond-CMOS devices. Finally, we present the challenges, opportunities, and long-term perspectives in this technologically promising field.
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Affiliation(s)
- Yuda Zhao
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France.,School of Micro-Nano Electronics, ZJU-Hangzhou Global Scientific and Technological Innovation Centre, Zhejiang University, 38 Zheda Road, 310027 Hangzhou, People's Republic of China
| | - Marco Gobbi
- Centro de Fisica de Materiales (CSIC-UPV/EHU), Paseo Manuel de Lardizabal 5, E-20018 Donostia-San Sebastián, Spain.,CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Luis E Hueso
- CIC nanoGUNE, E-20018 Donostia-San Sebastian, Basque Country, Spain.,IKERBASQUE, Basque Foundation for Science, 48009 Bilbao, Spain
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 allée Gaspard Monge, F-67000 Strasbourg, France
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6
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Zhang Q, Ying H, Li X, Xiang R, Zheng Y, Wang H, Su J, Xu M, Zheng X, Maruyama S, Zhang X. Controlled Doping Engineering in 2D MoS 2 Crystals toward Performance Augmentation of Optoelectronic Devices. ACS APPLIED MATERIALS & INTERFACES 2021; 13:31861-31869. [PMID: 34213304 DOI: 10.1021/acsami.1c07286] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Doping engineering of two-dimensional (2D) semiconductors is vital for expanding their device applications, but has been limited by the inhomogeneous distribution of doping atoms in such an ultrathin thickness. Here, we report the controlled doping of Sn heteroatoms into 2D MoS2 crystals through a single-step deposition method to improve the photodetection ability of MoS2 flakes, whereas the host lattice has been well reserved without the random aggregation of the introduced atoms. Atomic-resolution and spectroscopic characterizations provide direct evidence that Sn atoms have been substitutionally doped at Mo sites in the MoS2 lattice and the Sn dopant leads to an additional strain in the host lattice. The detection performance of Sn-doped MoS2 flakes exhibits an order of magnitude improvement (up to Rλ ≈ 29 A/W, EQE ≈ 7.8 × 103%, D* ≈ 1011 Jones@470 nm) as compared with that of pure MoS2 flakes, which is associated with electrons released from Sn atoms. Such a substitutional doping process in TMDs provides a potential platform to tune the on-demand properties of these 2D materials.
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Affiliation(s)
- Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Haoting Ying
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Yongjia Zheng
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Hemiao Wang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Xuefeng Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
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7
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Seo SG, Ryu JH, Kim SY, Jeong J, Jin SH. Enhancement of Photodetective Properties on Multilayered MoS 2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1586. [PMID: 34204218 PMCID: PMC8234691 DOI: 10.3390/nano11061586] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/07/2021] [Accepted: 06/10/2021] [Indexed: 01/04/2023]
Abstract
Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
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Affiliation(s)
| | | | | | | | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Incheon 22012, Korea; (S.G.S.); (J.H.R.); (S.Y.K.); (J.J.)
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8
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Song C, Noh G, Kim TS, Kang M, Song H, Ham A, Jo MK, Cho S, Chai HJ, Cho SR, Cho K, Park J, Song S, Song I, Bang S, Kwak JY, Kang K. Growth and Interlayer Engineering of 2D Layered Semiconductors for Future Electronics. ACS NANO 2020; 14:16266-16300. [PMID: 33301290 DOI: 10.1021/acsnano.0c06607] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered materials that do not form a covalent bond in a vertical direction can be prepared in a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of limiting thickness around the sub-nanometer level allowed scientists to explore various physical phenomena in the quantum realm. In addition to the contribution to fundamental science, various applications were proposed. Representatively, they were suggested as a promising material for future electronics. This is because (i) the dangling-bond-free nature inhibits surface scattering, thus carrier mobility can be maintained at sub-nanometer range; (ii) the ultrathin nature allows the short-channel effect to be overcome. In order to establish fundamental discoveries and utilize them in practical applications, appropriate preparation methods are required. On the other hand, adjusting properties to fit the desired application properly is another critical issue. Hence, in this review, we first describe the preparation method of layered materials. Proper growth techniques for target applications and the growth of emerging materials at the beginning stage will be extensively discussed. In addition, we suggest interlayer engineering via intercalation as a method for the development of artificial crystal. Since infinite combinations of the host-intercalant combination are possible, it is expected to expand the material system from the current compound system. Finally, inevitable factors that layered materials must face to be used as electronic applications will be introduced with possible solutions. Emerging electronic devices realized by layered materials are also discussed.
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Affiliation(s)
- Chanwoo Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Gichang Noh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Tae Soo Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Minsoo Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hwayoung Song
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Ayoung Ham
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Min-Kyung Jo
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Seorin Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Hyun-Jun Chai
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seong Rae Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Kiwon Cho
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Jeongwon Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
| | - Seungwoo Song
- Operando Methodology and Measurement Team, Interdisciplinary Materials Measurement Institute, Korea Research Institute of Standards and Science (KRISS), Daejeon 34113, Korea
| | - Intek Song
- Department of Applied Chemistry, Andong National University, Andong 36728, Korea
| | - Sunghwan Bang
- Materials & Production Engineering Research Institute, LG Electronics, Pyeongtaek-si 17709, Korea
| | - Joon Young Kwak
- Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul 02792, Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea
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9
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Fang Y, Meng L, Prominski A, Schaumann EN, Seebald M, Tian B. Recent advances in bioelectronics chemistry. Chem Soc Rev 2020. [PMID: 32672777 DOI: 10.1039/d1030cs00333f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/15/2023]
Abstract
Research in bioelectronics is highly interdisciplinary, with many new developments being based on techniques from across the physical and life sciences. Advances in our understanding of the fundamental chemistry underlying the materials used in bioelectronic applications have been a crucial component of many recent discoveries. In this review, we highlight ways in which a chemistry-oriented perspective may facilitate novel and deep insights into both the fundamental scientific understanding and the design of materials, which can in turn tune the functionality and biocompatibility of bioelectronic devices. We provide an in-depth examination of several developments in the field, organized by the chemical properties of the materials. We conclude by surveying how some of the latest major topics of chemical research may be further integrated with bioelectronics.
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Affiliation(s)
- Yin Fang
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA.
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10
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Fang Y, Meng L, Prominski A, Schaumann E, Seebald M, Tian B. Recent advances in bioelectronics chemistry. Chem Soc Rev 2020; 49:7978-8035. [PMID: 32672777 PMCID: PMC7674226 DOI: 10.1039/d0cs00333f] [Citation(s) in RCA: 35] [Impact Index Per Article: 8.8] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/13/2022]
Abstract
Research in bioelectronics is highly interdisciplinary, with many new developments being based on techniques from across the physical and life sciences. Advances in our understanding of the fundamental chemistry underlying the materials used in bioelectronic applications have been a crucial component of many recent discoveries. In this review, we highlight ways in which a chemistry-oriented perspective may facilitate novel and deep insights into both the fundamental scientific understanding and the design of materials, which can in turn tune the functionality and biocompatibility of bioelectronic devices. We provide an in-depth examination of several developments in the field, organized by the chemical properties of the materials. We conclude by surveying how some of the latest major topics of chemical research may be further integrated with bioelectronics.
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Affiliation(s)
- Yin Fang
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA
| | - Lingyuan Meng
- Pritzker School of Molecular Engineering, University of Chicago, Chicago, IL 60637, USA
| | | | - Erik Schaumann
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Matthew Seebald
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
| | - Bozhi Tian
- The James Franck Institute, University of Chicago, Chicago, IL 60637, USA
- Department of Chemistry, University of Chicago, Chicago, IL 60637, USA
- The Institute for Biophysical Dynamics, University of Chicago, Chicago, IL 60637, USA
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11
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Luo Z, Lin X, Tang L, Feng Y, Gui Y, Zhu J, Yang W, Li D, Zhou L, Fu L. Novel NiCl 2 Nanosheets Synthesized via Chemical Vapor Deposition with High Specific Energy for Thermal Battery. ACS APPLIED MATERIALS & INTERFACES 2020; 12:34755-34762. [PMID: 32648734 DOI: 10.1021/acsami.0c05751] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Two-dimensional (2D) nanomaterials possessing a unique sheet structure, compared to correlative bulk materials, exhibit excellent properties, especially in the energy storage and energy conversion field. In this case, NiCl2 nanosheets with thicknesses of 2-8 nm are first prepared by a simple chemical vapor deposition method. For the Li-B/LiF-LiCl-LiBr/NiCl2 thermal battery, the specific energy of NiCl2 nanosheets increases from 510 W h kg-1 (NiCl2 rods) to 616 W h kg-1 at an operation temperature of 500 °C and a current density of 0.2 A cm-2. The 2D morphology and large numbers of defects not only improve the redox reaction rates and the lithium storage capacity, but also enhance the adsorption capacity with the flake-like binder MgO, which prolong the discharge time by suppressing the discharge product diffusion to the electrolyte. These results indicate that NiCl2 nanosheets have a great possibility to become a desirable candidate of cathode materials for assisting in the development of high energy output and provide a new way to restrain the immersion between the electrode and electrolyte.
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Affiliation(s)
- Zeshunji Luo
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Xiaoxia Lin
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Licheng Tang
- State Key Laboratory of Advanced Chemical Power Sources, Guizhou Meiling Power Sources Company Ltd., Zunyi 563003, China
| | - Yong Feng
- State Key Laboratory of Advanced Chemical Power Sources, Guizhou Meiling Power Sources Company Ltd., Zunyi 563003, China
| | - Yufan Gui
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Jiajun Zhu
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Wulin Yang
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Deyi Li
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Lingping Zhou
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
| | - Licai Fu
- College of Material Science and Engineering, Hunan University, Changsha 410082, China
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Choi M, Bae SR, Hu L, Hoang AT, Kim SY, Ahn JH. Full-color active-matrix organic light-emitting diode display on human skin based on a large-area MoS 2 backplane. SCIENCE ADVANCES 2020; 6:eabb5898. [PMID: 32923597 PMCID: PMC7455500 DOI: 10.1126/sciadv.abb5898] [Citation(s) in RCA: 41] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2020] [Accepted: 05/27/2020] [Indexed: 05/06/2023]
Abstract
Electronic applications are continuously developing and taking new forms. Foldable, rollable, and wearable displays are applicable for human health care monitoring or robotics, and their operation relies on organic light-emitting diodes (OLEDs). Yet, the development of semiconducting materials with high mechanical flexibility has remained a challenge and restricted their use in unusual format electronics. This study presents a wearable full-color OLED display using a two-dimensional (2D) material-based backplane transistor. The 18-by-18 thin-film transistor array was fabricated on a thin MoS2 film that was transferred to Al2O3 (30 nm)/polyethylene terephthalate (6 μm). Red, green, and blue OLED pixels were deposited on the device surface. This 2D material offered excellent mechanical and electrical properties and proved to be capable of driving circuits for the control of OLED pixels. The ultrathin device substrate allowed for integration of the display on an unusual substrate, namely, a human hand.
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Affiliation(s)
- Minwoo Choi
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Sa-Rang Bae
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Luhing Hu
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Anh Tuan Hoang
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Soo Young Kim
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, Republic of Korea
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