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Huang Z, Bai Y, Zhao Y, Liu L, Zhao X, Wu J, Watanabe K, Taniguchi T, Yang W, Shi D, Xu Y, Zhang T, Zhang Q, Tan PH, Sun Z, Meng S, Wang Y, Du L, Zhang G. Observation of phonon Stark effect. Nat Commun 2024; 15:4586. [PMID: 38811589 PMCID: PMC11137145 DOI: 10.1038/s41467-024-48992-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/03/2024] [Accepted: 05/15/2024] [Indexed: 05/31/2024] Open
Abstract
Stark effect, the electric-field analogue of magnetic Zeeman effect, is one of the celebrated phenomena in modern physics and appealing for emergent applications in electronics, optoelectronics, as well as quantum technologies. While in condensed matter it has prospered only for excitons, whether other collective excitations can display Stark effect remains elusive. Here, we report the observation of phonon Stark effect in a two-dimensional quantum system of bilayer 2H-MoS2. The longitudinal acoustic phonon red-shifts linearly with applied electric fields and can be tuned over ~1 THz, evidencing giant Stark effect of phonons. Together with many-body ab initio calculations, we uncover that the observed phonon Stark effect originates fundamentally from the strong coupling between phonons and interlayer excitons (IXs). In addition, IX-mediated electro-phonon intensity modulation up to ~1200% is discovered for infrared-active phonon A2u. Our results unveil the exotic phonon Stark effect and effective phonon engineering by IX-mediated mechanism, promising for a plethora of exciting many-body physics and potential technological innovations.
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Affiliation(s)
- Zhiheng Huang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yunfei Bai
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanchong Zhao
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Le Liu
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuan Zhao
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Jiangbin Wu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Wei Yang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxia Shi
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Yang Xu
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
| | - Tiantian Zhang
- CAS Key Laboratory of Theoretical Physics, Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Qingming Zhang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, China
| | - Ping-Heng Tan
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhipei Sun
- QTF Centre of Excellence, Department of Electronics and Nanoengineering, Aalto University, Tietotie 3, FI-02150, Espoo, Finland
| | - Sheng Meng
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong Province, 523808, China
| | - Yaxian Wang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
| | - Luojun Du
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics; Key Laboratory for Nanoscale Physics and Devices, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, Guangdong Province, 523808, China.
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2
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Liu Y, Dai F, Bai H, Fan X, Wang R, Zheng X, Xiong Z, Sun H, Liang Z, Kang Z, Zhang Y. Exciton Localization Modulated by Ultradeep Moiré Potential in Twisted Bilayer γ-Graphdiyne. J Am Chem Soc 2024; 146:14593-14599. [PMID: 38718194 DOI: 10.1021/jacs.4c01359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Twisted moiré superlattice is featured with its moiré potential energy, the depth of which renders an effective approach to strengthening the exciton-exciton interaction and exciton localization toward high-performance quantum photonic devices. However, it remains as a long-standing challenge to further push the limit of moiré potential depth. Herein, owing to the pz orbital induced band edge states enabled by the unique sp-C in bilayer γ-graphdiyne (GDY), an ultradeep moiré potential of ∼289 meV is yielded. After being twisted into the hole-to-hole layer stacking configuration, the interlayer coupling is substantially intensified to augment the lattice potential of bilayer GDY up to 475%. The presence of lateral constrained moiré potential shifts the spatial distribution of electrons and holes in excitons from the regular alternating mode to their respective separated and localized mode. According to the well-established wave function distribution of electrons contained in excitons, the AA-stacked site is identified to serve for exciton localization. This work extends the materials systems available for moiré superlattice design further to serial carbon allotropes featured with benzene ring-alkyne chain coupling, unlocking tremendous potential for twistronic-based quantum device applications.
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Affiliation(s)
- Yingcong Liu
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Fulong Dai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haokun Bai
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xiayue Fan
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Ruiqi Wang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Xuzhi Zheng
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhaozhao Xiong
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Haochun Sun
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuojian Liang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, Beijing Key Laboratory for Advanced Energy Materials and Technologies, State Key Laboratory for Advanced Metals and Materials, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
- Beijing Advanced Innovation Center for Materials Genome Engineering, School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips Ministry of Education, University of Science and Technology Beijing, Beijing 100083, People's Republic of China
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3
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Feng S, Campbell AJ, Brotons-Gisbert M, Andres-Penares D, Baek H, Taniguchi T, Watanabe K, Urbaszek B, Gerber IC, Gerardot BD. Highly tunable ground and excited state excitonic dipoles in multilayer 2H-MoSe 2. Nat Commun 2024; 15:4377. [PMID: 38782967 DOI: 10.1038/s41467-024-48476-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Accepted: 04/29/2024] [Indexed: 05/25/2024] Open
Abstract
The fundamental properties of an exciton are determined by the spin, valley, energy, and spatial wavefunctions of the Coulomb-bound electron and hole. In van der Waals materials, these attributes can be widely engineered through layer stacking configuration to create highly tunable interlayer excitons with static out-of-plane electric dipoles, at the expense of the strength of the oscillating in-plane dipole responsible for light-matter coupling. Here we show that interlayer excitons in bi- and tri-layer 2H-MoSe2 crystals exhibit electric-field-driven coupling with the ground (1s) and excited states (2s) of the intralayer A excitons. We demonstrate that the hybrid states of these distinct exciton species provide strong oscillator strength, large permanent dipoles (up to 0.73 ± 0.01 enm), high energy tunability (up to ~200 meV), and full control of the spin and valley characteristics such that the exciton g-factor can be manipulated over a large range (from -4 to +14). Further, we observe the bi- and tri-layer excited state (2s) interlayer excitons and their coupling with the intralayer excitons states (1s and 2s). Our results, in good agreement with a coupled oscillator model with spin (layer)-selectivity and beyond standard density functional theory calculations, promote multilayer 2H-MoSe2 as a highly tunable platform to explore exciton-exciton interactions with strong light-matter interactions.
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Affiliation(s)
- Shun Feng
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Aidan J Campbell
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Mauro Brotons-Gisbert
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
| | - Daniel Andres-Penares
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Hyeonjun Baek
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Bernhard Urbaszek
- Institute of Condensed Matter Physics, Technische Universität Darmstadt, Darmstadt, Germany
| | - Iann C Gerber
- INSA-CNRS-UPS LPCNO, Université de Toulouse, Toulouse, France
| | - Brian D Gerardot
- Institute of Photonics and Quantum Sciences, SUPA, Heriot-Watt University, Edinburgh, UK.
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4
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Dai D, Fu B, Yang J, Yang L, Yan S, Chen X, Li H, Zuo Z, Wang C, Jin K, Gong Q, Xu X. Twist angle-dependent valley polarization switching in heterostructures. SCIENCE ADVANCES 2024; 10:eado1281. [PMID: 38748802 PMCID: PMC11095485 DOI: 10.1126/sciadv.ado1281] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/17/2024] [Accepted: 04/12/2024] [Indexed: 05/19/2024]
Abstract
The twist engineering of moiré superlattice in van der Waals heterostructures of transition metal dichalcogenides can manipulate valley physics of interlayer excitons (IXs), paving the way for next-generation valleytronic devices. However, the twist angle-dependent control of excitonic potential on valley polarization is not investigated so far in electrically controlled heterostructures and the physical mechanism underneath needs to be explored. Here, we demonstrate the dependence of both polarization switching and degree of valley polarization on the moiré period. We also find the mechanisms to reveal the modulation of twist angle on the exciton potential and the electron-hole exchange interaction, which elucidate the experimentally observed twist angle-dependent valley polarization of IXs. Furthermore, we realize the valley-addressable devices based on polarization switch. Our work demonstrates the manipulation of the valley polarization of IXs by tunning twist angle in electrically controlled heterostructures, which opens an avenue for electrically controlling the valley degrees of freedom in twistronic devices.
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Affiliation(s)
- Danjie Dai
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Bowen Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jingnan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Longlong Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Sai Yan
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiqing Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Hancong Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhanchun Zuo
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- CAS Center for Excellence in Topological Quantum Computation and School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xiulai Xu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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5
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Stellino E, D'Alò B, Blundo E, Postorino P, Polimeni A. Fine-Tuning of the Excitonic Response in Monolayer WS 2 Domes via Coupled Pressure and Strain Variation. NANO LETTERS 2024; 24:3945-3951. [PMID: 38506837 DOI: 10.1021/acs.nanolett.4c00157] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
We present a spectroscopic investigation of the vibrational and optoelectronic properties of WS2 domes in the 0-0.65 GPa range. The pressure evolution of the system morphology, deduced by the combined analysis of Raman and photoluminescence spectra, revealed a significant variation in the dome's aspect ratio. The modification of the dome shape caused major changes in the mechanical properties of the system resulting in a sizable increase of the out-of-plane compressive strain while keeping the in-plane tensile strain unchanged. The variation of the strain gradients drives a nonlinear behavior in both the exciton energy and radiative recombination intensity, interpreted as the consequence of a hybridization mechanism between the electronic states of two distinct minima in the conduction band. Our results indicate that pressure and strain can be efficiently combined in low dimensional systems with unconventional morphology to obtain modulations of the electronic band structure not achievable in planar crystals.
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Affiliation(s)
- Elena Stellino
- Department of Basic and Applied Sciences for Engineering, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Roma, Italy
| | - Beatrice D'Alò
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Roma, Italy
| | - Elena Blundo
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Roma, Italy
| | - Paolo Postorino
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Roma, Italy
| | - Antonio Polimeni
- Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185 Roma, Italy
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6
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Fang N, Wu C, Zhang Y, Li Z, Zhou Z. Perspectives: Light Control of Magnetism and Device Development. ACS NANO 2024; 18:8600-8625. [PMID: 38469753 DOI: 10.1021/acsnano.3c13002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/13/2024]
Abstract
Accurately controlling magnetic and spin states presents a significant challenge in spintronics, especially as demands for higher data storage density and increased processing speeds grow. Approaches such as light control are gradually supplanting traditional magnetic field methods. Traditionally, the modulation of magnetism was predominantly achieved through polarized light with the help of ultrafast light technologies. With the growing demand for energy efficiency and multifunctionality in spintronic devices, integrating photovoltaic materials into magnetoelectric systems has introduced more physical effects. This development suggests that sunlight will play an increasingly pivotal role in manipulating spin orientation in the future. This review introduces and concludes the influence of various light types on magnetism, exploring mechanisms such as magneto-optical (MO) effects, light-induced magnetic phase transitions, and spin photovoltaic effects. This review briefly summarizes recent advancements in the light control of magnetism, especially sunlight, and their potential applications, providing an optimistic perspective on future research directions in this area.
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Affiliation(s)
- Ning Fang
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
| | - Changqing Wu
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Yuzhe Zhang
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Zhongyu Li
- School of Environmental Science and Engineering, Jiangsu Key Laboratory of Advanced Catalytic Materials and Technology, School of Petrochemical Engineering, Changzhou University, Changzhou 213164, China
| | - Ziyao Zhou
- School of Materials Science and Engineering, Changzhou University, Changzhou 213164, China
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7
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Sun X, Suriyage M, Khan AR, Gao M, Zhao J, Liu B, Hasan MM, Rahman S, Chen RS, Lam PK, Lu Y. Twisted van der Waals Quantum Materials: Fundamentals, Tunability, and Applications. Chem Rev 2024; 124:1992-2079. [PMID: 38335114 DOI: 10.1021/acs.chemrev.3c00627] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Twisted van der Waals (vdW) quantum materials have emerged as a rapidly developing field of two-dimensional (2D) semiconductors. These materials establish a new central research area and provide a promising platform for studying quantum phenomena and investigating the engineering of novel optoelectronic properties such as single photon emission, nonlinear optical response, magnon physics, and topological superconductivity. These captivating electronic and optical properties result from, and can be tailored by, the interlayer coupling using moiré patterns formed by vertically stacking atomic layers with controlled angle misorientation or lattice mismatch. Their outstanding properties and the high degree of tunability position them as compelling building blocks for both compact quantum-enabled devices and classical optoelectronics. This paper offers a comprehensive review of recent advancements in the understanding and manipulation of twisted van der Waals structures and presents a survey of the state-of-the-art research on moiré superlattices, encompassing interdisciplinary interests. It delves into fundamental theories, synthesis and fabrication, and visualization techniques, and the wide range of novel physical phenomena exhibited by these structures, with a focus on their potential for practical device integration in applications ranging from quantum information to biosensors, and including classical optoelectronics such as modulators, light emitting diodes, lasers, and photodetectors. It highlights the unique ability of moiré superlattices to connect multiple disciplines, covering chemistry, electronics, optics, photonics, magnetism, topological and quantum physics. This comprehensive review provides a valuable resource for researchers interested in moiré superlattices, shedding light on their fundamental characteristics and their potential for transformative applications in various fields.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Manuka Suriyage
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ahmed Raza Khan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Department of Industrial and Manufacturing Engineering, University of Engineering and Technology (Rachna College Campus), Gujranwala, Lahore 54700, Pakistan
| | - Mingyuan Gao
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- College of Engineering and Technology, Southwest University, Chongqing 400716, China
| | - Jie Zhao
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Md Mehedi Hasan
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Sharidya Rahman
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- ARC Centre of Excellence in Exciton Science, Monash University, Clayton, Victoria 3800, Australia
| | - Ruo-Si Chen
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Ping Koy Lam
- Department of Quantum Science & Technology, Research School of Physics, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis #08-03, Singapore 138634, Republic of Singapore
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
- Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, The Australian National University, Canberra, Australian Capital Territory 2601, Australia
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8
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Fox C, Mao Y, Zhang X, Wang Y, Xiao J. Stacking Order Engineering of Two-Dimensional Materials and Device Applications. Chem Rev 2024; 124:1862-1898. [PMID: 38150266 DOI: 10.1021/acs.chemrev.3c00618] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Stacking orders in 2D van der Waals (vdW) materials dictate the relative sliding (lateral displacement) and twisting (rotation) between atomically thin layers. By altering the stacking order, many new ferroic, strongly correlated and topological orderings emerge with exotic electrical, optical and magnetic properties. Thanks to the weak vdW interlayer bonding, such highly flexible and energy-efficient stacking order engineering has transformed the design of quantum properties in 2D vdW materials, unleashing the potential for miniaturized high-performance device applications in electronics, spintronics, photonics, and surface chemistry. This Review provides a comprehensive overview of stacking order engineering in 2D vdW materials and their device applications, ranging from the typical fabrication and characterization methods to the novel physical properties and the emergent slidetronics and twistronics device prototyping. The main emphasis is on the critical role of stacking orders affecting the interlayer charge transfer, orbital coupling and flat band formation for the design of innovative materials with on-demand quantum properties and surface potentials. By demonstrating a correlation between the stacking configurations and device functionality, we highlight their implications for next-generation electronic, photonic and chemical energy conversion devices. We conclude with our perspective of this exciting field including challenges and opportunities for future stacking order engineering research.
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Affiliation(s)
- Carter Fox
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Yulu Mao
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Xiang Zhang
- Faculty of Science, University of Hong Kong, Hong Kong, China
- Faculty of Engineering, University of Hong Kong, Hong Kong, China
| | - Ying Wang
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
| | - Jun Xiao
- Department of Materials Science and Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
- Department of Physics, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States
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9
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Ge A, Ge X, Sun L, Lu X, Ma L, Zhao X, Yao B, Zhang X, Zhang T, Jing W, Zhou X, Shen X, Lu W. Unraveling the strain tuning mechanism of interlayer excitons in WSe 2/MoSe 2heterostructure. NANOTECHNOLOGY 2024; 35:175207. [PMID: 38266306 DOI: 10.1088/1361-6528/ad2232] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/23/2024] [Indexed: 01/26/2024]
Abstract
Atomically thin transition metal dichalcogenides (TMDs) exhibit rich excitonic physics, due to reduced dielectric screening and strong Coulomb interactions. Especially, some attractive topics in modern condensed matter physics, such as correlated insulator, superconductivity, topological excitons bands, are recently reported in stacking two monolayer (ML) TMDs. Here, we clearly reveal the tuning mechanism of tensile strain on interlayer excitons (IEXs) and intralayer excitons (IAXs) in WSe2/MoSe2heterostructure (HS) at low temperature. We utilize the cryogenic tensile strain platform to stretch the HS, and measure by micro-photoluminescence (μ-PL). The PL peaks redshifts of IEXs and IAXs in WSe2/MoSe2HS under tensile strain are well observed. The first-principles calculations by using density functional theory reveals the PL peaks redshifts of IEXs and IAXs origin from bandgap shrinkage. The calculation results also show the Mo-4d states dominating conduction band minimum shifts of the ML MoSe2plays a dominant role in the redshifts of IEXs. This work provides new insights into understanding the tuning mechanism of tensile strain on IEXs and IAXs in two-dimensional (2D) HS, and paves a way to the development of flexible optoelectronic devices based on 2D materials.
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Affiliation(s)
- Anping Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xun Ge
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Liaoxin Sun
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xinle Lu
- Key Laboratory of Polar Materials and Devices, Department of Electronics, East China Normal University, Shanghai, 200241, People's Republic of China
| | - Lei Ma
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Xinchao Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Bimu Yao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xin Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- Department of Physics, Shanghai Normal University, Shanghai, 200234, People's Republic of China
| | - Tao Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Wenji Jing
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
- University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Xiaohao Zhou
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Xuechu Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
| | - Wei Lu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, People's Republic of China
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10
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Blundo E, Tuzi F, Cianci S, Cuccu M, Olkowska-Pucko K, Kipczak Ł, Contestabile G, Miriametro A, Felici M, Pettinari G, Taniguchi T, Watanabe K, Babiński A, Molas MR, Polimeni A. Localisation-to-delocalisation transition of moiré excitons in WSe 2/MoSe 2 heterostructures. Nat Commun 2024; 15:1057. [PMID: 38316753 PMCID: PMC10844653 DOI: 10.1038/s41467-024-44739-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 01/02/2024] [Indexed: 02/07/2024] Open
Abstract
Moiré excitons (MXs) are electron-hole pairs localised by the periodic (moiré) potential forming in two-dimensional heterostructures (HSs). MXs can be exploited, e.g., for creating nanoscale-ordered quantum emitters and achieving or probing strongly correlated electronic phases at relatively high temperatures. Here, we studied the exciton properties of WSe2/MoSe2 HSs from T = 6 K to room temperature using time-resolved and continuous-wave micro-photoluminescence also under a magnetic field. The exciton dynamics and emission lineshape evolution with temperature show clear signatures that MXs de-trap from the moiré potential and turn into free interlayer excitons (IXs) for temperatures above 100 K. The MX-to-IX transition is also apparent from the exciton magnetic moment reversing its sign when the moiré potential is not capable of localising excitons at elevated temperatures. Concomitantly, the exciton formation and decay times reduce drastically. Thus, our findings establish the conditions for a truly confined nature of the exciton states in a moiré superlattice with increasing temperature and photo-generated carrier density.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy.
| | - Federico Tuzi
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Salvatore Cianci
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Marzia Cuccu
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Katarzyna Olkowska-Pucko
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093, Warsaw, Poland
| | - Łucja Kipczak
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093, Warsaw, Poland
| | - Giorgio Contestabile
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Antonio Miriametro
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Marco Felici
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council, 00133, Rome, Italy
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Adam Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093, Warsaw, Poland
| | - Maciej R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093, Warsaw, Poland
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, Piazzale Aldo Moro 5, 00185, Rome, Italy.
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11
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He M, Cai J, Zheng H, Seewald E, Taniguchi T, Watanabe K, Yan J, Yankowitz M, Pasupathy A, Yao W, Xu X. Dynamically tunable moiré exciton Rydberg states in a monolayer semiconductor on twisted bilayer graphene. NATURE MATERIALS 2024; 23:224-229. [PMID: 38177379 DOI: 10.1038/s41563-023-01713-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Accepted: 10/02/2023] [Indexed: 01/06/2024]
Abstract
Moiré excitons are emergent optical excitations in two-dimensional semiconductors with moiré superlattice potentials. Although these excitations have been observed on several platforms, a system with dynamically tunable moiré potential to tailor their properties is yet to be realized. Here we present a continuously tunable moiré potential in monolayer WSe2, enabled by its proximity to twisted bilayer graphene (TBG) near the magic angle. By tuning local charge density via gating, TBG provides a spatially varying and dynamically tunable dielectric superlattice for modulation of monolayer WSe2 exciton wave functions. We observed emergent moiré exciton Rydberg branches with increased energy splitting following doping of TBG due to exciton wave function hybridization between bright and dark Rydberg states. In addition, emergent Rydberg states can probe strongly correlated states in TBG at the magic angle. Our study provides a new platform for engineering moiré excitons and optical accessibility to electronic states with small correlation gaps in TBG.
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Affiliation(s)
- Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Jiaqi Cai
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Huiyuan Zheng
- Department of Physics, University of Hong Kong, Hong Kong, China
| | - Eric Seewald
- Department of Physics, Columbia University, New York, NY, USA
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, TN, USA
| | - Matthew Yankowitz
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Abhay Pasupathy
- Department of Physics, Columbia University, New York, NY, USA
| | - Wang Yao
- Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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12
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LaGasse SW, Proscia NV, Cress CD, Fonseca JJ, Cunningham PD, Janzen E, Edgar JH, Pennachio DJ, Culbertson J, Zalalutdinov M, Robinson JT. Hexagonal Boron Nitride Slab Waveguides for Enhanced Spectroscopy of Encapsulated 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309777. [PMID: 37992676 DOI: 10.1002/adma.202309777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 11/08/2023] [Indexed: 11/24/2023]
Abstract
The layered insulator hexagonal boron nitride (hBN) is a critical substrate that brings out the exceptional intrinsic properties of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs). In this work, the authors demonstrate how hBN slabs tuned to the correct thickness act as optical waveguides, enabling direct optical coupling of light emission from encapsulated layers into waveguide modes. Molybdenum selenide (MoSe2 ) and tungsten selenide (WSe2 ) are integrated within hBN-based waveguides and demonstrate direct coupling of photoluminescence emitted by in-plane and out-of-plane transition dipoles (bright and dark excitons) to slab waveguide modes. Fourier plane imaging of waveguided photoluminescence from MoSe2 demonstrates that dry etched hBN edges are an effective out-coupler of waveguided light without the need for oil-immersion optics. Gated photoluminescence of WSe2 demonstrates the ability of hBN waveguides to collect light emitted by out-of-plane dark excitons.Numerical simulations explore the parameters of dipole placement and slab thickness, elucidating the critical design parameters and serving as a guide for novel devices implementing hBN slab waveguides. The results provide a direct route for waveguide-based interrogation of layered materials, as well as a way to integrate layered materials into future photonic devices at arbitrary positions whilst maintaining their intrinsic properties.
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Affiliation(s)
- Samuel W LaGasse
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Nicholas V Proscia
- NRC Postdoctoral Fellow residing at the US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Cory D Cress
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jose J Fonseca
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Paul D Cunningham
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Eli Janzen
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - James H Edgar
- Department of Chemical Engineering, Kansas State University, Manhattan, KS, 66506, USA
| | - Daniel J Pennachio
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - James Culbertson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Maxim Zalalutdinov
- Acoustics Division, US Naval Research Laboratory, Washington, DC, 20375, USA
| | - Jeremy T Robinson
- Electronics Science and Technology Division, US Naval Research Laboratory, Washington, DC, 20375, USA
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13
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Rakhlin M, Sorokin S, Galimov A, Eliseyev I, Davydov V, Kirilenko D, Toropov A, Shubina T. Allotropic Ga 2Se 3/GaSe nanostructures grown by van der Waals epitaxy: narrow exciton lines and single-photon emission. NANOSCALE 2024; 16:2039-2047. [PMID: 38204419 DOI: 10.1039/d3nr05674k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
The ability to emit narrow exciton lines, preferably with a clearly defined polarization, is one of the key conditions for the use of nanostructures based on III-VI monochalcogenides and other layered crystals in quantum technology to create non-classical light. Currently, the main method of their formation is exfoliation followed by strain and defect engineering. A factor limiting the use of epitaxy is the presence of different phases in the grown films. In this work, we show that control over their formation makes it possible to create structures with the desired properties. We propose Ga2Se3/GaSe nanostructures grown by van der Waals epitaxy with a high VI/III flux ratio as a source of narrow exciton lines. Actually, these nanostructures are a combination of allotropes: GaSe and Ga2Se3, consisting of the same atoms in different arrangements. The energy positions of the narrow lines are determined by the quantum confinement in Ga2Se3 inclusions of different sizes in the GaSe matrix, similar to quantum dots, and their linear polarization is due to the ordering of Ga vacancies in a certain crystalline direction in Ga2Se3. Such nanostructures exhibit single-photon emission with second-order correlation function g(2)(0) ∼ 0.10 at 10 K that makes them promising for quantum technologies.
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14
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Qian C, Troue M, Figueiredo J, Soubelet P, Villafañe V, Beierlein J, Klembt S, Stier AV, Höfling S, Holleitner AW, Finley JJ. Lasing of moiré trapped MoSe 2/WSe 2 interlayer excitons coupled to a nanocavity. SCIENCE ADVANCES 2024; 10:eadk6359. [PMID: 38198542 PMCID: PMC10780878 DOI: 10.1126/sciadv.adk6359] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/04/2023] [Accepted: 12/11/2023] [Indexed: 01/12/2024]
Abstract
We report lasing of moiré trapped interlayer excitons (IXs) by integrating a pristine hBN-encapsulated MoSe2/WSe2 heterobilayer into a high-Q (>104) nanophotonic cavity. We control the cavity-IX detuning using a magnetic field and measure their dipolar coupling strength to be 78 ± 4 micro-electron volts, fully consistent with the 82 micro-electron volts predicted by theory. The emission from the cavity mode shows clear threshold-like behavior as the transition is tuned into resonance with the cavity. We observe a superlinear power dependence accompanied by a narrowing of the linewidth as the distinct features of lasing. The onset and prominence of these threshold-like behaviors are pronounced at resonance while weak off-resonance. Our results show that a lasing transition can be induced in interacting moiré IXs with macroscopic coherence extending over the length scale of the cavity mode. Such systems raise interesting perspectives for low-power switching and synaptic nanophotonic devices using two-dimensional materials.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mirco Troue
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Johannes Figueiredo
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Johannes Beierlein
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Sebastian Klembt
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Andreas V. Stier
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Sven Höfling
- Julius-Maximilians-Universität Würzburg, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Lehrstuhl für Technische Physik, Am Hubland, 97074 Würzburg, Germany
| | - Alexander W. Holleitner
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
- Munich Center for Quantum Science and Technology (MCQST), Schellingstr. 4, 80799 Munich, Germany
| | - Jonathan J. Finley
- Walter Schottky Institut and TUM School of Natural Science, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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15
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Bai Y, Li Y, Liu S, Guo Y, Pack J, Wang J, Dean CR, Hone J, Zhu X. Evidence for Exciton Crystals in a 2D Semiconductor Heterotrilayer. NANO LETTERS 2023; 23:11621-11629. [PMID: 38071655 DOI: 10.1021/acs.nanolett.3c03453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDC) and their moiré interfaces have been demonstrated for correlated electron states, including Mott insulators and electron/hole crystals commensurate with moiré superlattices. Here we present spectroscopic evidence for ordered bosons─interlayer exciton crystals in a WSe2/MoSe2/WSe2 trilayer, where the enhanced Coulomb interactions over those in heterobilayers have been predicted to result in exciton ordering. Ordered interlayer excitons in the trilayer are characterized by negligible mobility and by sharper PL peaks persisting to an exciton density of nex ∼ 1012 cm-2, which is an order of magnitude higher than the corresponding limit in the heterobilayer. We present evidence for the predicted quadrupolar exciton crystal and its transitions to dipolar excitons either with increasing nex or by an applied electric field. These ordered interlayer excitons may serve as models for the exploration of quantum phase transitions and quantum coherent phenomena.
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Affiliation(s)
- Yusong Bai
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Yiliu Li
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Song Liu
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Yinjie Guo
- Department of Physics and Astronomy, Columbia University, New York, New York 10027, United States
| | - Jordan Pack
- Department of Physics and Astronomy, Columbia University, New York, New York 10027, United States
| | - Jue Wang
- Department of Chemistry, Columbia University, New York, New York 10027, United States
| | - Cory R Dean
- Department of Physics and Astronomy, Columbia University, New York, New York 10027, United States
| | - James Hone
- Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States
| | - Xiaoyang Zhu
- Department of Chemistry, Columbia University, New York, New York 10027, United States
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16
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Prokhorov AV, Gubin MY, Shesterikov AV, Arsenin AV, Volkov VS, Evlyukhin AB. Lasing Effect in Symmetrical van der Waals Heterostructured Metasurfaces Due to Lattice-Induced Multipole Coupling. NANO LETTERS 2023; 23:11105-11111. [PMID: 38029331 PMCID: PMC10880088 DOI: 10.1021/acs.nanolett.3c03522] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Revised: 11/19/2023] [Accepted: 11/20/2023] [Indexed: 12/01/2023]
Abstract
New practical ways to reach the lasing effect in symmetrical metasurfaces have been developed and theoretically demonstrated. Our approach is based on excitation of the resonance of an octupole quasi-trapped mode (OQTM) in heterostructured symmetrical metasurfaces composed of monolithic disk-shaped van der Waals meta-atoms featured by thin photoluminescent layers and placed on a substrate. We revealed that the coincidence of the photoluminescence spectrum maximum of these layers with the wavelength of high-quality OQTM resonance leads to the lasing effect. Based on the solution of laser rate equations and direct full-wave simulation, it was shown that lasing is normally oriented to the metasurface plane and occurs from the entire area of metasurface consisting of MoS2/hBN/MoTe2 disks with line width of generated emission of only about 1.4 nm near the wavelength 1140 nm. This opens up new practical possibilities for creating surface emitting laser devices in subwavelength material systems.
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Affiliation(s)
- Alexei V. Prokhorov
- Emerging
Technologies Research Center, XPANCEO, Dubai 00000, United Arab Emirates
| | - Mikhail Yu. Gubin
- Emerging
Technologies Research Center, XPANCEO, Dubai 00000, United Arab Emirates
| | | | - Aleksey V. Arsenin
- Emerging
Technologies Research Center, XPANCEO, Dubai 00000, United Arab Emirates
| | - Valentyn S. Volkov
- Emerging
Technologies Research Center, XPANCEO, Dubai 00000, United Arab Emirates
| | - Andrey B. Evlyukhin
- Institute
of Quantum Optics, Leibniz Universität
Hannover, Hannover 30167, Germany
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17
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Zhao H, Zhu L, Li X, Chandrasekaran V, Baldwin JK, Pettes MT, Piryatinski A, Yang L, Htoon H. Manipulating Interlayer Excitons for Near-Infrared Quantum Light Generation. NANO LETTERS 2023. [PMID: 38038967 DOI: 10.1021/acs.nanolett.3c03296] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/02/2023]
Abstract
Interlayer excitons (IXs) formed at the interface of van der Waals materials possess various novel properties. In parallel development, strain engineering has emerged as an effective means for creating 2D quantum emitters. Exploring the intersection of these two exciting areas, we use MoS2/WSe2 heterostructure as a model system and demonstrate how strain, defects, and layering can be utilized to create defect-bound IXs capable of bright, robust, and tunable quantum light emission in the technologically important near-infrared spectral range. Our work presents defect-bound IXs as a promising platform for pushing the performance of 2D quantum emitters beyond their current limitations.
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Affiliation(s)
- Huan Zhao
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Linghan Zhu
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Xiangzhi Li
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Vigneshwaran Chandrasekaran
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Jon Kevin Baldwin
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Michael T Pettes
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Andrei Piryatinski
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
- Theoretical Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Li Yang
- Department of Physics, Washington University in St. Louis, St. Louis, Missouri 63130, United States
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, Missouri 63130, United States
| | - Han Htoon
- Center for Integrated Nanotechnologies, Materials Physics and Applications Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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18
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Moradifar P, Liu Y, Shi J, Siukola Thurston ML, Utzat H, van Driel TB, Lindenberg AM, Dionne JA. Accelerating Quantum Materials Development with Advances in Transmission Electron Microscopy. Chem Rev 2023. [PMID: 37979189 DOI: 10.1021/acs.chemrev.2c00917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/20/2023]
Abstract
Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, superconductors, quantum dots, color center-hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, superconductivity, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the material's detailed atomic-scale structure, including atomic defects, dopants, and lattice stacking. In this review, we describe how progress in the field of electron microscopy (EM), including in situ and in operando EM, can accelerate advances in quantum materials and quantum excitations. We begin by describing fundamental EM principles and operation modes. We then discuss various EM methods such as (i) EM spectroscopies, including electron energy loss spectroscopy (EELS), cathodoluminescence (CL), and electron energy gain spectroscopy (EEGS); (ii) four-dimensional scanning transmission electron microscopy (4D-STEM); (iii) dynamic and ultrafast EM (UEM); (iv) complementary ultrafast spectroscopies (UED, XFEL); and (v) atomic electron tomography (AET). We describe how these methods could inform structure-function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable precision positioning of atomic defects and high-resolution manipulation of quantum materials. For each method, we also describe existing limitations to solve open quantum mechanical questions, and how they might be addressed to accelerate progress. Among numerous notable results, our review highlights how EM is enabling identification of the 3D structure of quantum defects; measuring reversible and metastable dynamics of quantum excitations; mapping exciton states and single photon emission; measuring nanoscale thermal transport and coupled excitation dynamics; and measuring the internal electric field and charge density distribution of quantum heterointerfaces- all at the quantum materials' intrinsic atomic and near atomic-length scale. We conclude by describing open challenges for the future, including achieving stable sample holders for ultralow temperature (below 10K) atomic-scale spatial resolution, stable spectrometers that enable meV energy resolution, and high-resolution, dynamic mapping of magnetic and spin fields. With atomic manipulation and ultrafast characterization enabled by EM, quantum materials will be poised to integrate into many of the sustainable and energy-efficient technologies needed for the 21st century.
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Affiliation(s)
- Parivash Moradifar
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Yin Liu
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Jiaojian Shi
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | | | - Hendrik Utzat
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Chemistry, University of California Berkeley, Berkeley, California 94720, United States
| | - Tim B van Driel
- Linac Coherent Light Source, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, United States
| | - Aaron M Lindenberg
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- SLAC National Accelerator Laboratory, 2575 Sand Hill Road MS69, Menlo Park, California 94025, United States
| | - Jennifer A Dionne
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Department of Radiology, Stanford University, Stanford, California 94305, United States
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19
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Fang H, Lin Q, Zhang Y, Thompson J, Xiao S, Sun Z, Malic E, Dash SP, Wieczorek W. Localization and interaction of interlayer excitons in MoSe 2/WSe 2 heterobilayers. Nat Commun 2023; 14:6910. [PMID: 37903787 PMCID: PMC10616232 DOI: 10.1038/s41467-023-42710-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Accepted: 10/19/2023] [Indexed: 11/01/2023] Open
Abstract
Transition metal dichalcogenide (TMD) heterobilayers provide a versatile platform to explore unique excitonic physics via the properties of the constituent TMDs and external stimuli. Interlayer excitons (IXs) can form in TMD heterobilayers as delocalized or localized states. However, the localization of IX in different types of potential traps, the emergence of biexcitons in the high-excitation regime, and the impact of potential traps on biexciton formation have remained elusive. In our work, we observe two types of potential traps in a MoSe2/WSe2 heterobilayer, which result in significantly different emission behavior of IXs at different temperatures. We identify the origin of these traps as localized defect states and the moiré potential of the TMD heterobilayer. Furthermore, with strong excitation intensity, a superlinear emission behavior indicates the emergence of interlayer biexcitons, whose formation peaks at a specific temperature. Our work elucidates the different excitation and temperature regimes required for the formation of both localized and delocalized IX and biexcitons and, thus, contributes to a better understanding and application of the rich exciton physics in TMD heterostructures.
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Affiliation(s)
- Hanlin Fang
- Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 41296, Gothenburg, Sweden.
| | - Qiaoling Lin
- Department of Electrical and Photonics Engineering, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - Yi Zhang
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, Espoo, 02150, Finland
| | - Joshua Thompson
- Department of Physics, Philipps-Universität Marburg, 35037, Marburg, Germany
| | - Sanshui Xiao
- Department of Electrical and Photonics Engineering, Technical University of Denmark, DK-2800, Kongens Lyngby, Denmark
| | - Zhipei Sun
- Department of Electronics and Nanoengineering and QTF Centre of Excellence, Aalto University, Espoo, 02150, Finland
| | - Ermin Malic
- Department of Physics, Philipps-Universität Marburg, 35037, Marburg, Germany
| | - Saroj P Dash
- Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 41296, Gothenburg, Sweden
| | - Witlef Wieczorek
- Department of Microtechnology and Nanoscience (MC2), Chalmers University of Technology, 41296, Gothenburg, Sweden.
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20
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Biswas S, Wong J, Pokawanvit S, Yang WCD, Zhang H, Akbari H, Watanabe K, Taniguchi T, Davydov AV, da Jornada FH, Atwater HA. Edge-Confined Excitons in Monolayer Black Phosphorus. ACS NANO 2023. [PMID: 37861986 DOI: 10.1021/acsnano.3c07337] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/21/2023]
Abstract
Quantum confinement of two-dimensional excitons in van der Waals materials via electrostatic trapping, lithographic patterning, Moiré potentials, and chemical implantation has enabled significant advances in tailoring light emission from nanostructures. While such approaches rely on complex preparation of materials, natural edges are a ubiquitous feature in layered materials and provide a different approach for investigating quantum-confined excitons. Here, we observe that certain edge sites of monolayer black phosphorus (BP) strongly localize the intrinsic quasi-one-dimensional excitons, yielding sharp spectral lines in photoluminescence, with nearly an order of magnitude line width reduction. Through structural characterization of BP edges using transmission electron microscopy and first-principles GW plus Bethe-Salpeter equation (GW-BSE) calculations of exemplary BP nanoribbons, we find that certain atomic reconstructions can strongly quantum-confine excitons resulting in distinct emission features, mediated by local strain and screening. We observe linearly polarized luminescence emission from edge reconstructions that preserve the mirror symmetry of the parent BP lattice, in agreement with calculations. Furthermore, we demonstrate efficient electrical switching of localized edge excitonic luminescence, whose sites act as excitonic transistors for emission. Localized emission from BP edges motivates exploration of nanoribbons and quantum dots as hosts for tunable narrowband light generation, with future potential to create atomic-like structures for quantum information processing applications as well as exploration of exotic phases that may reside in atomic edge structures.
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Affiliation(s)
- Souvik Biswas
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Joeson Wong
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Supavit Pokawanvit
- Department of Applied Physics, Stanford University, Stanford, California 94305, United States
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
| | - Wei-Chang David Yang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Huairuo Zhang
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
- Thesis Research, Inc., La Jolla, California 92037, United States
| | - Hamidreza Akbari
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute of Materials Science, Tsukuba 305-044, Japan
| | - Takashi Taniguchi
- International Center for Materials, Nanoarchitectonics, National Institute of Materials Science, Tsukuba 305-044, Japan
| | - Albert V Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Felipe H da Jornada
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, United States
- Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States
| | - Harry A Atwater
- Thomas J. Watson Laboratory of Applied Physics, California Institute of Technology, Pasadena, California 91125, United States
- Kavli Nanoscience Institute, Pasadena, California 91125, United States
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21
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Jiao C, Pei S, Wu S, Wang Z, Xia J. Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 86:114503. [PMID: 37774692 DOI: 10.1088/1361-6633/acfe89] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/31/2022] [Accepted: 09/29/2023] [Indexed: 10/01/2023]
Abstract
Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.
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Affiliation(s)
- Chenyin Jiao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Song Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, People's Republic of China
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22
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Cai H, Rasmita A, Tan Q, Lai JM, He R, Cai X, Zhao Y, Chen D, Wang N, Mu Z, Huang Z, Zhang Z, Eng JJH, Liu Y, She Y, Pan N, Miao Y, Wang X, Liu X, Zhang J, Gao W. Interlayer donor-acceptor pair excitons in MoSe 2/WSe 2 moiré heterobilayer. Nat Commun 2023; 14:5766. [PMID: 37723156 PMCID: PMC10507070 DOI: 10.1038/s41467-023-41330-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Accepted: 08/31/2023] [Indexed: 09/20/2023] Open
Abstract
Localized interlayer excitons (LIXs) in two-dimensional moiré superlattices exhibit sharp and dense emission peaks, making them promising as highly tunable single-photon sources. However, the fundamental nature of these LIXs is still elusive. Here, we show the donor-acceptor pair (DAP) mechanism as one of the origins of these excitonic peaks. Numerical simulation results of the DAP model agree with the experimental photoluminescence spectra of LIX in the moiré MoSe2/WSe2 heterobilayer. In particular, we find that the emission energy-lifetime correlation and the nonmonotonic power dependence of the lifetime agree well with the DAP IX model. Our results provide insight into the physical mechanism of LIX formation in moiré heterostructures and pave new directions for engineering interlayer exciton properties in moiré superlattices.
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Affiliation(s)
- Hongbing Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Jia-Min Lai
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ruihua He
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiangbin Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yan Zhao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Disheng Chen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Naizhou Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhao Mu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zumeng Huang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
| | - John J H Eng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore, Singapore
| | - Yuanda Liu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore
| | - Yongzhi She
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Nan Pan
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Yansong Miao
- School of Biological Sciences, Nanyang Technological University, Singapore, 637551, Singapore
| | - Xiaoping Wang
- Department of Physics, University of Science and Technology of China, Hefei Anhui, 230026, China
| | - Xiaogang Liu
- Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
| | - Jun Zhang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore, 637371, Singapore.
- Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore.
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23
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Ripin A, Peng R, Zhang X, Chakravarthi S, He M, Xu X, Fu KM, Cao T, Li M. Tunable phononic coupling in excitonic quantum emitters. NATURE NANOTECHNOLOGY 2023; 18:1020-1026. [PMID: 37264087 DOI: 10.1038/s41565-023-01410-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/15/2022] [Accepted: 04/28/2023] [Indexed: 06/03/2023]
Abstract
Engineering the coupling between fundamental quantum excitations is at the heart of quantum science and technologies. An outstanding case is the creation of quantum light sources in which coupling between single photons and phonons can be controlled and harnessed to enable quantum information transduction. Here we report the deterministic creation of quantum emitters featuring highly tunable coupling between excitons and phonons. The quantum emitters are formed in strain-induced quantum dots created in homobilayer WSe2. The colocalization of quantum-confined interlayer excitons and terahertz interlayer breathing-mode phonons, which directly modulates the exciton energy, leads to a uniquely strong phonon coupling to single-photon emission, with a Huang-Rhys factor reaching up to 6.3. The single-photon spectrum of interlayer exciton emission features a single-photon purity >83% and multiple phonon replicas, each heralding the creation of a phonon Fock state in the quantum emitter. Due to the vertical dipole moment of the interlayer exciton, the phonon-photon interaction is electrically tunable to be higher than the exciton and phonon decoherence rate, and hence promises to reach the strong-coupling regime. Our result demonstrates a solid-state quantum excitonic-optomechanical system at the atomic interface of the WSe2 bilayer that emits flying photonic qubits coupled with stationary phonons, which could be exploited for quantum transduction and interconnection.
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Affiliation(s)
- Adina Ripin
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Ruoming Peng
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaowei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | | | - Minhao He
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Kai-Mei Fu
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA
- Physical Sciences Division, Pacific Northwest National Laboratory, Richland, WA, USA
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Mo Li
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Electrical and Computer Engineering, University of Washington, Seattle, WA, USA.
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24
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Ge C, Zhang D, Xiao F, Zhao H, He M, Huang L, Hou S, Tong Q, Pan A, Wang X. Observation and Modulation of High-Temperature Moiré-Locale Excitons in van der Waals Heterobilayers. ACS NANO 2023; 17:16115-16122. [PMID: 37560986 DOI: 10.1021/acsnano.3c04943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/11/2023]
Abstract
Transition metal dichalcogenide heterobilayers feature strong moiré potentials with multiple local minima, which can spatially trap interlayer excitons at different locations within one moiré unit cell (dubbed moiré locales). However, current studies mainly focus on moiré excitons trapped at a single moiré locale. Exploring interlayer excitons trapped at different moiré locales is highly desirable for building polarized light-emitter arrays and studying multiorbital correlated and topological physics. Here, via enhancing the interlayer coupling and engineering the heterointerface, we report the observation and modulation of high-temperature interlayer excitons trapped at separate moiré locales in WS2/WSe2 heterobilayers. These moiré-locale excitons are identified by two emission peaks with an energy separation of ∼60 meV, exhibiting opposite circular polarizations due to their distinct local stacking registries. With the increase of temperature, two momentum-indirect moiré-locale excitons are observed, which show a distinct strain dependence with the momentum-direct one. The emission of these moiré-locale excitons can be controlled via engineering the heterointerface with different phonon scattering, while their emission energy can be further modulated via strain engineering. Our reported highly tunable interlayer excitons provide important information on understanding moiré excitonic physics, with possible applications in building high-temperature excitonic devices.
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Affiliation(s)
- Cuihuan Ge
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Danliang Zhang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Feiping Xiao
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Haipeng Zhao
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Mai He
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Lanyu Huang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Shijin Hou
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Qingjun Tong
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
| | - Xiao Wang
- School of Physics and Electronics, Hunan University, Changsha, 410082, China
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, China
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25
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Kim H, Dong D, Okamura Y, Shinokita K, Watanabe K, Taniguchi T, Matsuda K. Dynamics of Moiré Trion and Its Valley Polarization in a Microfabricated WSe 2/MoSe 2 Heterobilayer. ACS NANO 2023. [PMID: 37450661 DOI: 10.1021/acsnano.3c02952] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2023]
Abstract
The moiré potential, induced by stacking two monolayer semiconductors with slightly different lattice mismatches, acts as periodic quantum confinement for optically generated excitons, resulting in spatially ordered zero-dimensional quantum systems. However, there are limitations to exploring intrinsic optical properties of moiré excitons due to ensemble emissions and broadened emissions from many peaks caused by the inhomogeneity of the moiré potential. In this study, we proposed a microfabrication technique based on focused Ga+ ion beams, which enables us to control the number of peaks originating from the moiré potential and thus explore unknown moiré optical characteristics of WSe2/MoSe2 heterobilayer. By taking advantage of this approach, we reveal emissions from a single moiré exciton and charged moiré exciton (trion) under electrostatic doping conditions. We show the momentum dark moiré trion state above the bright trion state with a splitting energy of approximately 4 meV and clarify that the dynamics are determined by the initial trion population in the bright state. Furthermore, the degree of negative circularly polarized emissions and their valley dynamics of moiré trions are dominated by a very long valley relaxation process lasting ∼700 ns. Our findings on microfabricated heterobilayer could be viewed as an extension of our groundbreaking efforts in the field of quantum optics application using moiré superlattices.
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Affiliation(s)
- Heejun Kim
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Duanfei Dong
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Yuki Okamura
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Keisuke Shinokita
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kazunari Matsuda
- Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
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26
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Montblanch ARP, Barbone M, Aharonovich I, Atatüre M, Ferrari AC. Layered materials as a platform for quantum technologies. NATURE NANOTECHNOLOGY 2023:10.1038/s41565-023-01354-x. [PMID: 37322143 DOI: 10.1038/s41565-023-01354-x] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2022] [Accepted: 02/17/2023] [Indexed: 06/17/2023]
Abstract
Layered materials are taking centre stage in the ever-increasing research effort to develop material platforms for quantum technologies. We are at the dawn of the era of layered quantum materials. Their optical, electronic, magnetic, thermal and mechanical properties make them attractive for most aspects of this global pursuit. Layered materials have already shown potential as scalable components, including quantum light sources, photon detectors and nanoscale sensors, and have enabled research of new phases of matter within the broader field of quantum simulations. In this Review we discuss opportunities and challenges faced by layered materials within the landscape of material platforms for quantum technologies. In particular, we focus on applications that rely on light-matter interfaces.
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Affiliation(s)
- Alejandro R-P Montblanch
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- QuTech and Kavli Institute of Nanoscience, Delft University of Technology, Delft, The Netherlands
| | - Matteo Barbone
- Cavendish Laboratory, University of Cambridge, Cambridge, UK
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK
- Munich Center for Quantum Science and Technology, (MCQST), Munich, Germany
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Garching, Germany
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
- Australian Research Council Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, New South Wales, Sydney, Australia
| | - Mete Atatüre
- Cavendish Laboratory, University of Cambridge, Cambridge, UK.
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, UK.
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27
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Li Y, Yuan Q, Guo D, Lou C, Cui X, Mei G, Petek H, Cao L, Ji W, Feng M. 1D Electronic Flat Bands in Untwisted Moiré Superlattices. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300572. [PMID: 37057612 DOI: 10.1002/adma.202300572] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 04/03/2023] [Indexed: 06/16/2023]
Abstract
After the preparation of 2D electronic flat band (EFB) in van der Waals (vdW) superlattices, recent measurements suggest the existence of 1D electronic flat bands (1D-EFBs) in twisted vdW bilayers. However, the realization of 1D-EFBs is experimentally elusive in untwisted 2D layers, which is desired considering their fabrication and scalability. Herein, the discovery of 1D-EFBs is reported in an untwisted in situ-grown two atomic-layer Bi(110) superlattice self-aligned on an SnSe(001) substrate using scanning probe microscopy measurements and density functional theory calculations. While the Bi-Bi dimers of Bi zigzag (ZZ) chains are buckled, the epitaxial lattice mismatch between the Bi and SnSe layers induces two 1D buckling reversal regions (BRRs) extending along the ZZ direction in each Bi(110)-11 × 11 supercell. A series of 1D-EFBs arises spatially following BRRs that isolate electronic states along the armchair (AC) direction and localize electrons in 1D extended states along ZZ due to quantum interference at a topological node. This work provides a generalized strategy for engineering 1D-EFBs in utilizing lattice mismatch between untwisted rectangular vdW layers.
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Affiliation(s)
- Yafei Li
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Qing Yuan
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Deping Guo
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin Universiry of China, Beijing, 100872, P. R. China
| | - Cancan Lou
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Xingxia Cui
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Guangqiang Mei
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Hrvoje Petek
- Department of Physics and Astronomy and the IQ Initiative, University of Pittsburgh, Pittsburgh, 15260, USA
| | - Limin Cao
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Materials & Micro-Nano Devices, Department of Physics, Renmin University of China, Beijing, 100872, P. R. China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin Universiry of China, Beijing, 100872, P. R. China
| | - Min Feng
- School of Physics and Technology and Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education, Wuhan University, Wuhan, 430072, P. R. China
- Institute for Advanced Study, Wuhan University, Wuhan, 430072, P. R. China
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28
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Zhang D, Zhai D, Deng S, Yao W, Zhu Q. Single Photon Emitters with Polarization and Orbital Angular Momentum Locking in Monolayer Semiconductors. NANO LETTERS 2023; 23:3851-3857. [PMID: 37104699 DOI: 10.1021/acs.nanolett.3c00459] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
Excitons in monolayer transition metal dichalcogenide are endowed with intrinsic valley-orbit coupling between their center-of-mass motion and valley pseudospin. When trapped in a confinement potential, e.g., generated by strain field, we find that intralayer excitons are valley and orbital angular momentum (OAM) entangled. By tuning the trap profile and external magnetic field, one can engineer the exciton states at the ground state and realize a series of valley-OAM entangled states. We further show that the OAM of excitons can be transferred to emitted photons, and these novel exciton states can naturally serve as polarization-OAM locked single photon emitters, which under certain circumstance become polarization-OAM entangled, highly tunable by strain trap and magnetic field. Our proposal demonstrates a novel scheme to generate polarization-OAM locked/entangled photons at the nanoscale with a high degree of integrability and tunability, pointing to exciting opportunities for quantum information applications.
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Affiliation(s)
- Di Zhang
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Sha Deng
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Qizhong Zhu
- Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics and Telecommunication Engineering, South China Normal University, Guangzhou 510006, China
- Guangdong-Hong Kong Joint Laboratory of Quantum Matter, Frontier Research Institute for Physics, South China Normal University, Guangzhou 510006, China
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29
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Wang X, Zhang X, Zhu J, Park H, Wang Y, Wang C, Holtzmann WG, Taniguchi T, Watanabe K, Yan J, Gamelin DR, Yao W, Xiao D, Cao T, Xu X. Intercell moiré exciton complexes in electron lattices. NATURE MATERIALS 2023; 22:599-604. [PMID: 36894775 DOI: 10.1038/s41563-023-01496-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2022] [Accepted: 02/01/2023] [Indexed: 05/05/2023]
Abstract
Excitons, Coulomb-bound electron-hole pairs, play a crucial role in both optical excitation and correlated phenomena in solids. When excitons interact with other quasiparticles, few- and many-body excited states can appear. Here we report an interaction between exciton and charges enabled by unusual quantum confinement in two-dimensional moiré superlattices, which results in many-body ground states composed of moiré excitons and correlated electron lattices. In an H-stacked (60o-twisted) WS2/WSe2 heterobilayer, we found an interlayer moiré exciton whose hole is surrounded by its partner electron's wavefunction distributed among three adjacent moiré traps. This three-dimensional excitonic structure enables large in-plane electrical quadrupole moments in addition to the vertical dipole. Upon doping, the quadrupole facilitates the binding of interlayer moiré excitons to the charges in neighbouring moiré cells, forming intercell charged exciton complexes. Our work provides a framework for understanding and engineering emergent exciton many-body states in correlated moiré charge orders.
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Affiliation(s)
- Xi Wang
- Department of Physics, University of Washington, Seattle, WA, USA
- Department of Chemistry, University of Washington, Seattle, WA, USA
| | - Xiaowei Zhang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | - Jiayi Zhu
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Heonjoon Park
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Yingqi Wang
- Department of Physics, University of Washington, Seattle, WA, USA
| | - Chong Wang
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA
| | | | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, Tsukuba, Japan
| | - Jiaqiang Yan
- Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, USA
| | - Daniel R Gamelin
- Department of Chemistry, University of Washington, Seattle, WA, USA
| | - Wang Yao
- Department of Physics, University of Hong Kong, Hong Kong, China.
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China.
| | - Di Xiao
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
- Pacific Northwest National Laboratory, Richland, WA, USA.
| | - Ting Cao
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
| | - Xiaodong Xu
- Department of Physics, University of Washington, Seattle, WA, USA.
- Department of Materials Science and Engineering, University of Washington, Seattle, WA, USA.
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30
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Gupta S, Wu W, Huang S, Yakobson BI. Single-Photon Emission from Two-Dimensional Materials, to a Brighter Future. J Phys Chem Lett 2023; 14:3274-3284. [PMID: 36977324 DOI: 10.1021/acs.jpclett.2c03674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Single photons, often called flying qubits, have enormous promise to realize scalable quantum technologies ranging from an unhackable communication network to quantum computers. However, finding an ideal single-photon emitter (SPE) is a great challenge. Recently, two-dimensional (2D) materials have shown great potential as hosts for SPEs that are bright and operate under ambient conditions. This Perspective enumerates the metrics required for an SPE source and highlights that 2D materials, because of reduced dimensionality, exhibit interesting physical effects and satisfy several metrics, making them excellent candidates to host SPEs. The performance of SPE candidates discovered in 2D materials, hexagonal boron nitride and transition metal dichalcogenides, will be assessed based on the metrics, and the remaining challenges will be highlighted. Lastly, strategies to mitigate such challenges by developing design rules to deterministically create SPE sources will be presented.
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Affiliation(s)
- Sunny Gupta
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
| | - Wenjing Wu
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Shengxi Huang
- Department of Electrical and Computer Engineering, Rice University, Houston, Texas 77005, USA
| | - Boris I Yakobson
- Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States
- Department of Chemistry, Rice University, Houston, Texas 77005, United States
- Smalley-Curl Institute for Nanoscale Science and Technology, Rice University, Houston, Texas 77005, United States
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31
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López LEP, Rosławska A, Scheurer F, Berciaud S, Schull G. Tip-induced excitonic luminescence nanoscopy of an atomically resolved van der Waals heterostructure. NATURE MATERIALS 2023; 22:482-488. [PMID: 36928383 DOI: 10.1038/s41563-023-01494-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/12/2022] [Accepted: 01/30/2023] [Indexed: 06/18/2023]
Abstract
The electronic and optical properties of van der Waals heterostructures are strongly influenced by the structuration and homogeneity of their nano- and atomic-scale environments. Unravelling this intimate structure-property relationship is a key challenge that requires methods capable of addressing the light-matter interactions in van der Waals materials with ultimate spatial resolution. Here we use a low-temperature scanning tunnelling microscope to probe-with atomic-scale resolution-the excitonic luminescence of a van der Waals heterostructure, made of a transition metal dichalcogenide monolayer stacked onto a few-layer graphene flake supported by a Au(111) substrate. Sharp emission lines arising from neutral, charged and localized excitons are reported. Their intensities and emission energies vary as a function of the nanoscale topography of the van der Waals heterostructure, explaining the variability of the emission properties observed with diffraction-limited approaches. Our work paves the way towards understanding and controlling optoelectronic phenomena in moiré superlattices with atomic-scale resolution.
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Affiliation(s)
- Luis E Parra López
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Anna Rosławska
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Fabrice Scheurer
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France
| | - Stéphane Berciaud
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France.
| | - Guillaume Schull
- Université de Strasbourg, CNRS, Institut de Physique et Chimie des Matériaux de Strasbourg, UMR 7504, Strasbourg, France.
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32
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Rong R, Liu Y, Nie X, Zhang W, Zhang Z, Liu Y, Guo W. The Interaction of 2D Materials With Circularly Polarized Light. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206191. [PMID: 36698292 PMCID: PMC10074140 DOI: 10.1002/advs.202206191] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/16/2022] [Indexed: 06/17/2023]
Abstract
2D materials (2DMs), due to spin-valley locking degree of freedom, exhibit strongly bound exciton and chiral optical selection rules and become promising material candidates for optoelectronic and spin/valleytronic devices. Over the last decade, the manifesting of 2D materials by circularly polarized lights expedites tremendous fascinating phenomena, such as valley/exciton Hall effect, Moiré exciton, optical Stark effect, circular dichroism, circularly polarized photoluminescence, and spintronic property. In this review, recent advance in the interaction of circularly polarized light with 2D materials covering from graphene, black phosphorous, transition metal dichalcogenides, van der Waals heterostructures as well as small proportion of quasi-2D perovskites and topological materials, is overviewed. The confronted challenges and theoretical and experimental opportunities are also discussed, attempting to accelerate the prosperity of chiral light-2DMs interactions.
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Affiliation(s)
- Rong Rong
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Ying Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Xuchen Nie
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wei Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Yanpeng Liu
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of EducationState Key Laboratory of Mechanics and Control of Mechanical Structuresand Institute for Frontier ScienceNanjing University of Aeronautics and AstronauticsNanjing210016China
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33
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Faria Junior PE, Fabian J. Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe 2/WSe 2 Heterobilayers: From Energy Bands to Dipolar Excitons. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:1187. [PMID: 37049281 PMCID: PMC10096971 DOI: 10.3390/nano13071187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 03/22/2023] [Accepted: 03/24/2023] [Indexed: 06/19/2023]
Abstract
Multilayered van der Waals heterostructures based on transition metal dichalcogenides are suitable platforms on which to study interlayer (dipolar) excitons, in which electrons and holes are localized in different layers. Interestingly, these excitonic complexes exhibit pronounced valley Zeeman signatures, but how their spin-valley physics can be further altered due to external parameters-such as electric field and interlayer separation-remains largely unexplored. Here, we perform a systematic analysis of the spin-valley physics in MoSe2/WSe2 heterobilayers under the influence of an external electric field and changes of the interlayer separation. In particular, we analyze the spin (Sz) and orbital (Lz) degrees of freedom, and the symmetry properties of the relevant band edges (at K, Q, and Γ points) of high-symmetry stackings at 0° (R-type) and 60° (H-type) angles-the important building blocks present in moiré or atomically reconstructed structures. We reveal distinct hybridization signatures on the spin and the orbital degrees of freedom of low-energy bands, due to the wave function mixing between the layers, which are stacking-dependent, and can be further modified by electric field and interlayer distance variation. We find that H-type stackings favor large changes in the g-factors as a function of the electric field, e.g., from -5 to 3 in the valence bands of the Hhh stacking, because of the opposite orientation of Sz and Lz of the individual monolayers. For the low-energy dipolar excitons (direct and indirect in k-space), we quantify the electric dipole moments and polarizabilities, reflecting the layer delocalization of the constituent bands. Furthermore, our results show that direct dipolar excitons carry a robust valley Zeeman effect nearly independent of the electric field, but tunable by the interlayer distance, which can be rendered experimentally accessible via applied external pressure. For the momentum-indirect dipolar excitons, our symmetry analysis indicates that phonon-mediated optical processes can easily take place. In particular, for the indirect excitons with conduction bands at the Q point for H-type stackings, we find marked variations of the valley Zeeman (∼4) as a function of the electric field, which notably stands out from the other dipolar exciton species. Our analysis suggests that stronger signatures of the coupled spin-valley physics are favored in H-type stackings, which can be experimentally investigated in samples with twist angle close to 60°. In summary, our study provides fundamental microscopic insights into the spin-valley physics of van der Waals heterostructures, which are relevant to understanding the valley Zeeman splitting of dipolar excitonic complexes, and also intralayer excitons.
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34
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Zheng H, Wu B, Wang CT, Li S, He J, Liu Z, Wang JT, Duan JA, Liu Y. Moiré Enhanced Potentials in Twisted Transition Metal Dichalcogenide Trilayers Homostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2207988. [PMID: 36938893 DOI: 10.1002/smll.202207988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Revised: 03/03/2023] [Indexed: 06/18/2023]
Abstract
The exploration of moiré superlatticesholds promising potential to uncover novel quantum phenomena emerging from the interplay of atomic structure and electronic correlation . However, the impact of the moiré potential modulation on the number of twisted layers has yet to be experimentally explored. Here, this work synthesizes a twisted WSe2 homotrilayer using a dry-transfer method and investigates the enhancement of the moiré potential with increasing number of twisted layers. The results of the study reveal the presence of multiple exciton resonances with positive or negative circularly polarized emission in the WSe2 homostructure with small twist angles, which are attributed to the excitonic ground and excited states confined to the moiré potential. The distinct g-factor observed in the magneto-optical spectroscopy is also shown to be a result of the confinement of the exciton in the moiré potential. The moiré potential depths of the twisted bilayer and trilayer homostructures are found to be 111 and 212 meV, respectively, an increase of 91% from the bilayer structure. These findings demonstrate that the depth of the moiré potential can be manipulated by adjusting the number of stacked layers, providing a promising avenue for exploration into highly correlated quantum phenomena.
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Affiliation(s)
- Haihong Zheng
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Biao Wu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Chang-Tian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
| | - Shaofei Li
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Jun He
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Zongwen Liu
- School of Chemical and Biomolecular Engineering, The University of Sydney, Sydney, NSW, 2006, Australia
- The University of Sydney Nano Institute, The University of Sydney, Sydney, NSW, 2006, Australia
| | - Jian-Tao Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, People's Republic of China
| | - Ji-An Duan
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
| | - Yanping Liu
- School of Physics and Electronics, Hunan Key Laboratory for Super-microstructure and Ultrafast Process, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
- State Key Laboratory of High-Performance Complex Manufacturing, Central South University, 932 South Lushan Road, Changsha, Hunan, 410083, People's Republic of China
- Shenzhen Research Institute of Central South University, Shenzhen, 518057, People's Republic of China
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35
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Lin BH, Chao YC, Hsieh IT, Chuu CP, Lee CJ, Chu FH, Lu LS, Hsu WT, Pao CW, Shih CK, Su JJ, Chang WH. Remarkably Deep Moiré Potential for Intralayer Excitons in MoSe 2/MoS 2 Twisted Heterobilayers. NANO LETTERS 2023; 23:1306-1312. [PMID: 36745443 DOI: 10.1021/acs.nanolett.2c04524] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
A moiré superlattice formed in twisted van der Waals bilayers has emerged as a new tuning knob for creating new electronic states in two-dimensional materials. Excitonic properties can also be altered drastically due to the presence of moiré potential. However, quantifying the moiré potential for excitons is nontrivial. By creating a large ensemble of MoSe2/MoS2 heterobilayers with a systematic variation of twist angles, we map out the minibands of interlayer and intralayer excitons as a function of twist angles, from which we determine the moiré potential for excitons. Surprisingly, the moiré potential depth for intralayer excitons is up to ∼130 meV, comparable to that for interlayer excitons. This result is markedly different from theoretical calculations based on density functional theory, which show an order of magnitude smaller moiré potential for intralayer excitons. The remarkably deep intralayer moiré potential is understood within the framework of structural reconstruction within the moiré unit cell.
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Affiliation(s)
- Bo-Han Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Yung-Chun Chao
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - I Ta Hsieh
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Chih-Piao Chuu
- Corporate Research, Taiwan Semiconductor Manufacturing Company (TSMC), Hsinchu30075, Taiwan
| | - Chien-Ju Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Fu-Hsien Chu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Li-Syuan Lu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Wei-Ting Hsu
- Department of Physics, The University of Texas at Austin, Austin, Texas78712, United States
- Department of Physics, National Tsing Hua University, Hsinchu30004, Taiwan
| | - Chun-Wei Pao
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
| | - Chih-Kang Shih
- Department of Physics, The University of Texas at Austin, Austin, Texas78712, United States
| | - Jung-Jung Su
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
| | - Wen-Hao Chang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu30010, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Taipei11529, Taiwan
- College of Engineering, Chang Gung University, Taoyuan33302, Taiwan
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36
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Villafañe V, Kremser M, Hübner R, Petrić MM, Wilson NP, Stier AV, Müller K, Florian M, Steinhoff A, Finley JJ. Twist-Dependent Intra- and Interlayer Excitons in Moiré MoSe_{2} Homobilayers. PHYSICAL REVIEW LETTERS 2023; 130:026901. [PMID: 36706404 DOI: 10.1103/physrevlett.130.026901] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/21/2022] [Accepted: 12/19/2022] [Indexed: 06/18/2023]
Abstract
Optoelectronic properties of van der Waals homostructures can be selectively engineered by the relative twist angle between layers. Here, we study the twist-dependent moiré coupling in MoSe_{2} homobilayers. For small angles, we find a pronounced redshift of the K-K and Γ-K excitons accompanied by a transition from K-K to Γ-K emission. Both effects can be traced back to the underlying moiré pattern in the MoSe_{2} homobilayers, as confirmed by our low-energy continuum model for different moiré excitons. We identify two distinct intralayer moiré excitons for R stacking, while H stacking yields two degenerate intralayer excitons due to inversion symmetry. In both cases, bright interlayer excitons are found at higher energies. The performed calculations are in excellent agreement with experiment and allow us to characterize the observed exciton resonances, providing insight about the layer composition and relevant stacking configuration of different moiré exciton species.
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Affiliation(s)
- Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Malte Kremser
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Ruven Hübner
- Institut für Theoretische Physik, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany
| | - Marko M Petrić
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Kai Müller
- Walter Schottky Institut and Department of Electrical and Computer Engineering, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Matthias Florian
- University of Michigan, Department of Electrical Engineering and Computer Science, Ann Arbor, Michigan 48109, USA
| | - Alexander Steinhoff
- Institut für Theoretische Physik, Universität Bremen, P.O. Box 330 440, 28334 Bremen, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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37
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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38
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Parto K, Azzam SI, Lewis N, Patel SD, Umezawa S, Watanabe K, Taniguchi T, Moody G. Cavity-Enhanced 2D Material Quantum Emitters Deterministically Integrated with Silicon Nitride Microresonators. NANO LETTERS 2022; 22:9748-9756. [PMID: 36318636 PMCID: PMC9756340 DOI: 10.1021/acs.nanolett.2c03151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2022] [Revised: 10/26/2022] [Indexed: 05/25/2023]
Abstract
Optically active defects in 2D materials, such as hexagonal boron nitride (hBN) and transition-metal dichalcogenides (TMDs), are an attractive class of single-photon emitters with high brightness, operation up to room temperature, site-specific engineering of emitter arrays with strain and irradiation techniques, and tunability with external electric fields. In this work, we demonstrate a novel approach to precisely align and embed hBN and TMDs within background-free silicon nitride microring resonators. Through the Purcell effect, high-purity hBN emitters exhibit a cavity-enhanced spectral coupling efficiency of up to 46% at room temperature, exceeding the theoretical limit (up to 40%) for cavity-free waveguide-emitter coupling and demonstrating nearly a 1 order of magnitude improvement over previous work. The devices are fabricated with a CMOS-compatible process and exhibit no degradation of the 2D material optical properties, robustness to thermal annealing, and 100 nm positioning accuracy of quantum emitters within single-mode waveguides, opening a path for scalable quantum photonic chips with on-demand single-photon sources.
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Affiliation(s)
- K. Parto
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. I. Azzam
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
- California
Nanosystems Institute, University of California, Santa Barbara, California93106, United States
| | - N. Lewis
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. D. Patel
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - S. Umezawa
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
| | - K. Watanabe
- Research
Center for Functional Materials, National
Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - T. Taniguchi
- International
Center for Materials Nanoarchitectures, National Institute for Materials Science, 1-1 Namiki, Tsukuba305-0044, Japan
| | - G. Moody
- Electrical
and Computer Engineering Department, University
of California, Santa
Barbara, California93106, United States
- California
Nanosystems Institute, University of California, Santa Barbara, California93106, United States
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39
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Strain control of hybridization between dark and localized excitons in a 2D semiconductor. Nat Commun 2022; 13:7691. [PMID: 36509779 PMCID: PMC9744834 DOI: 10.1038/s41467-022-35352-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/08/2022] [Accepted: 11/30/2022] [Indexed: 12/14/2022] Open
Abstract
Mechanical strain is a powerful tuning knob for excitons, Coulomb-bound electron-hole complexes dominating optical properties of two-dimensional semiconductors. While the strain response of bright free excitons is broadly understood, the behaviour of dark free excitons (long-lived excitations that generally do not couple to light due to spin and momentum conservation) or localized excitons related to defects remains mostly unexplored. Here, we study the strain behaviour of these fragile many-body states on pristine suspended WSe2 kept at cryogenic temperatures. We find that under the application of strain, dark and localized excitons in monolayer WSe2-a prototypical 2D semiconductor-are brought into energetic resonance, forming a new hybrid state that inherits the properties of the constituent species. The characteristics of the hybridized state, including an order-of-magnitude enhanced light/matter coupling, avoided-crossing energy shifts, and strain tunability of many-body interactions, are all supported by first-principles calculations. The hybridized excitons reported here may play a critical role in the operation of single quantum emitters based on WSe2. Furthermore, the techniques we developed may be used to fingerprint unidentified excitonic states.
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40
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Tan Q, Rasmita A, Zhang Z, Novoselov KS, Gao WB. Signature of Cascade Transitions between Interlayer Excitons in a Moiré Superlattice. PHYSICAL REVIEW LETTERS 2022; 129:247401. [PMID: 36563256 DOI: 10.1103/physrevlett.129.247401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/18/2022] [Accepted: 11/08/2022] [Indexed: 06/17/2023]
Abstract
A moiré superlattice in transition metal dichalcogenides heterostructure provides an exciting platform for studying strongly correlated electronics and excitonic physics, such as multiple interlayer exciton (IX) energy bands. However, the correlations between these IXs remain elusive. Here, we demonstrate the cascade transitions between IXs in a moiré superlattice by performing energy- and time-resolved photoluminescence measurements in the MoS_{2}/WSe_{2} heterostructure. Furthermore, we show that the lower-energy IX can be excited to higher-energy ones, facilitating IX population inversion. Our finding of cascade transitions between IXs contributes to the fundamental understanding of the IX dynamics in moiré superlattices and may have important applications, such as in exciton condensate, quantum information protocols, and quantum cascade lasers.
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Affiliation(s)
- Qinghai Tan
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
| | - Abdullah Rasmita
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - Zhaowei Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| | - K S Novoselov
- Department of Materials Science and Engineering, National University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Wei-Bo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
- The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University, Singapore 637371, Singapore
- Centre for Quantum Technologies, National University of Singapore, 117543 Singapore, Singapore
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41
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Gobato YG, de Brito CS, Chaves A, Prosnikov MA, Woźniak T, Guo S, Barcelos ID, Milošević MV, Withers F, Christianen PCM. Distinctive g-Factor of Moiré-Confined Excitons in van der Waals Heterostructures. NANO LETTERS 2022; 22:8641-8646. [PMID: 36279205 DOI: 10.1021/acs.nanolett.2c03008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
We investigated the valley Zeeman splitting of excitonic peaks in the microphotoluminescence (μPL) spectra of high-quality hBN/WS2/MoSe2/hBN heterostructures under perpendicular magnetic fields up to 20 T. We identify two neutral exciton peaks in the μPL spectra; the lower-energy peak exhibits a reduced g-factor relative to that of the higher energy peak and much lower than the recently reported values for interlayer excitons in other van der Waals (vdW) heterostructures. We provide evidence that such a discernible g-factor stems from the spatial confinement of the exciton in the potential landscape created by the moiré pattern due to lattice mismatch or interlayer twist in heterobilayers. This renders magneto-μPL an important tool to reach a deeper understanding of the effect of moiré patterns on excitonic confinement in vdW heterostructures.
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Affiliation(s)
- Y Galvão Gobato
- Physics Department, Federal University of São Carlos, São Carlos, São Paulo13565-905, Brazil
| | - C Serati de Brito
- Physics Department, Federal University of São Carlos, São Carlos, São Paulo13565-905, Brazil
| | - A Chaves
- Departamento de Física, Universidade Federal do Ceará, Fortaleza, Ceará60455-760, Brazil
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, 2020Antwerp, Belgium
| | - M A Prosnikov
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 EDNijmegen, The Netherlands
| | - T Woźniak
- Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, 50-370Wrocław, Poland
| | - Shi Guo
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, U.K
| | - Ingrid D Barcelos
- Brazilian Synchrotron Light Laboratory (LNLS), Brazilian Center for Research in Energy and Materials (CNPEM), Campinas, São Paulo13083-970, Brazil
| | - M V Milošević
- Department of Physics and NANOlab Center of Excellence, University of Antwerp, 2020Antwerp, Belgium
- Instituto de Física, Universidade Federal de Mato Grosso, Cuiabá, Mato Grosso78060-900, Brazil
| | - F Withers
- Centre for Graphene Science, College of Engineering, Mathematics and Physical Sciences, University of Exeter, Exeter, EX4 4QF, U.K
| | - P C M Christianen
- High Field Magnet Laboratory (HFML-EMFL), Radboud University, 6525 EDNijmegen, The Netherlands
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42
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Fu Q, Dai J, Huang X, Dai Y, Pan Y, Yang L, Sun Z, Miao T, Zhou M, Zhao L, Zhao W, Han X, Lu J, Gao H, Zhou X, Wang Y, Ni Z, Ji W, Huang Y. One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204247. [PMID: 36104244 PMCID: PMC9661865 DOI: 10.1002/advs.202204247] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/08/2022] [Indexed: 06/01/2023]
Abstract
Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2 /Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2 , MoSe2 ) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions.
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Affiliation(s)
- Qiang Fu
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jia‐Qi Dai
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Xin‐Yu Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yun‐Yun Dai
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Yu‐Hao Pan
- China North Vehicle Research InstituteBeijing100072P. R. China
| | - Long‐Long Yang
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Zhen‐Yu Sun
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Tai‐Min Miao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Meng‐Fan Zhou
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Lin Zhao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
| | - Wei‐Jie Zhao
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Xu Han
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
| | - Jun‐Peng Lu
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Hong‐Jun Gao
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Xing‐Jiang Zhou
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
- Songshan Lake Materials LaboratoryDongguan523808P. R. China
- University of Chinese Academy of SciencesBeijing100049P. R. China
| | - Ye‐Liang Wang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
| | - Zhen‐Hua Ni
- School of Physics and Key Laboratory of MEMS of the Ministry of EducationSoutheast UniversityNanjing211189P. R. China
| | - Wei Ji
- Department of Physics and Beijing Key Laboratory of Optoelectronic Functional Materials & Micro‐Nano DevicesRenmin University of ChinaBeijing100872P. R. China
| | - Yuan Huang
- Advanced Research Institute of Multidisciplinary ScienceBeijing Institute of TechnologyBeijing100081P. R. China
- Institute of PhysicsChinese Academy of ScienceBeijing100190P. R. China
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43
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Sun X, Zhu Y, Qin H, Liu B, Tang Y, Lü T, Rahman S, Yildirim T, Lu Y. Enhanced interactions of interlayer excitons in free-standing heterobilayers. Nature 2022; 610:478-484. [PMID: 36224395 DOI: 10.1038/s41586-022-05193-z] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/29/2021] [Accepted: 08/04/2022] [Indexed: 11/09/2022]
Abstract
Strong, long-range dipole-dipole interactions between interlayer excitons (IXs) can lead to new multiparticle correlation regimes1,2, which drive the system into distinct quantum and classical phases2-5, including dipolar liquids, crystals and superfluids. Both repulsive and attractive dipole-dipole interactions have been theoretically predicted between IXs in a semiconductor bilayer2,6-8, but only repulsive interactions have been reported experimentally so far3,9-16. This study investigated free-standing, twisted (51°, 53°, 45°) tungsten diselenide/tungsten disulfide (WSe2/WS2) heterobilayers, in which we observed a transition in the nature of dipolar interactions among IXs, from repulsive to attractive. This was caused by quantum-exchange-correlation effects, leading to the appearance of a robust interlayer biexciton phase (formed by two IXs), which has been theoretically predicted6-8 but never observed before in experiments. The reduced dielectric screening in a free-standing heterobilayer not only resulted in a much higher formation efficiency of IXs, but also led to strongly enhanced dipole-dipole interactions, which enabled us to observe the many-body correlations of pristine IXs at the two-dimensional quantum limit. In addition, we firstly observed several emission peaks from moiré-trapped IXs at room temperature in a well-aligned, free-standing WSe2/WS2 heterobilayer. Our findings open avenues for exploring new quantum phases with potential for applications in non-linear optics.
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Affiliation(s)
- Xueqian Sun
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Yi Zhu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Hao Qin
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Boqing Liu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Yilin Tang
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Tieyu Lü
- Department of Physics and Institute of Theoretical Physics and Astrophysics, Xiamen University, Xiamen, China
| | - Sharidya Rahman
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia
| | - Tanju Yildirim
- Center for Functional Sensor and Actuator, Research Center for Functional Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki, Japan
| | - Yuerui Lu
- School of Engineering, College of Engineering and Computer Science, the Australian National University, Canberra, Australian Capital Territory, Australia. .,Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology, the Australian National University, Canberra, Australian Capital Territory, Australia.
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44
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Localized interlayer excitons in MoSe 2-WSe 2 heterostructures without a moiré potential. Nat Commun 2022; 13:5354. [PMID: 36097165 PMCID: PMC9468147 DOI: 10.1038/s41467-022-33082-6] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/07/2022] [Accepted: 09/01/2022] [Indexed: 11/13/2022] Open
Abstract
Interlayer excitons (IXs) in MoSe2–WSe2 heterobilayers have generated interest as highly tunable light emitters in transition metal dichalcogenide (TMD) heterostructures. Previous reports of spectrally narrow (<1 meV) photoluminescence (PL) emission lines at low temperature have been attributed to IXs localized by the moiré potential between the TMD layers. We show that spectrally narrow IX PL lines are present even when the moiré potential is suppressed by inserting a bilayer hexagonal boron nitride (hBN) spacer between the TMD layers. We compare the doping, electric field, magnetic field, and temperature dependence of IXs in a directly contacted MoSe2–WSe2 region to those in a region separated by bilayer hBN. The doping, electric field, and temperature dependence of the narrow IX lines are similar for both regions, but their excitonic g-factors have opposite signs, indicating that the origin of narrow IX PL is not the moiré potential. The spectrally narrow photoluminescence lines occurring in transition metal dichalcogenides (TMD) heterostructures at low temperature have been attributed to interlayer excitons (IXs) localized by the moiré potential between the TMD layers. Here, the authors show that these lines are present even when the moiré potential is suppressed by inserting an hBN spacer between the TMD layers.
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45
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Pei S, Wang Z, Xia J. Interlayer Coupling: An Additional Degree of Freedom in Two-Dimensional Materials. ACS NANO 2022; 16:11498-11503. [PMID: 35943159 DOI: 10.1021/acsnano.1c11498] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Due to their layered nature, two-dimensional nanomaterials can stack into artificial material systems, with van der Waals interaction between the adjacent constituent layers. In such heterostructures, the physical properties are largely affected by the interlayer coupling and can thus be effectively tuned by a number of means. In this Perspective, we highlight four such experimental approaches: stacking order, electric field, intercalation, and pressure, and we discuss challenges and opportunities in future studies for van der Waals heterostructures.
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Affiliation(s)
- Shenghai Pei
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Zenghui Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Juan Xia
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, China
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46
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Blundo E, Junior PEF, Surrente A, Pettinari G, Prosnikov MA, Olkowska-Pucko K, Zollner K, Woźniak T, Chaves A, Kazimierczuk T, Felici M, Babiński A, Molas MR, Christianen PCM, Fabian J, Polimeni A. Strain-Induced Exciton Hybridization in WS_{2} Monolayers Unveiled by Zeeman-Splitting Measurements. PHYSICAL REVIEW LETTERS 2022; 129:067402. [PMID: 36018658 DOI: 10.1103/physrevlett.129.067402] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/22/2021] [Accepted: 06/09/2022] [Indexed: 06/15/2023]
Abstract
Mechanical deformations and ensuing strain are routinely exploited to tune the band gap energy and to enhance the functionalities of two-dimensional crystals. In this Letter, we show that strain leads also to a strong modification of the exciton magnetic moment in WS_{2} monolayers. Zeeman-splitting measurements under magnetic fields up to 28.5 T were performed on single, one-layer-thick WS_{2} microbubbles. The strain of the bubbles causes a hybridization of k-space direct and indirect excitons resulting in a sizable decrease in the modulus of the g factor of the ground-state exciton. These findings indicate that strain may have major effects on the way the valley number of excitons can be used to process binary information in two-dimensional crystals.
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Affiliation(s)
- Elena Blundo
- Physics Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Paulo E Faria Junior
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Alessandro Surrente
- Physics Department, Sapienza University of Rome, 00185 Rome, Italy
- Department of Experimental Physics, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, 50-370 Wrocław, Poland
| | - Giorgio Pettinari
- Institute for Photonics and Nanotechnologies, National Research Council, 00156 Rome, Italy
| | - Mikhail A Prosnikov
- High Field Magnet Laboratory, HFML-EMFL, Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Katarzyna Olkowska-Pucko
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Klaus Zollner
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Tomasz Woźniak
- Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, 50-370 Wrocław, Poland
| | - Andrey Chaves
- Departamento de Fisica, Universidade Federal do Ceará, 60455-900 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
| | - Tomasz Kazimierczuk
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Marco Felici
- Physics Department, Sapienza University of Rome, 00185 Rome, Italy
| | - Adam Babiński
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Maciej R Molas
- Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Pasteura 5, 02-093 Warsaw, Poland
| | - Peter C M Christianen
- High Field Magnet Laboratory, HFML-EMFL, Radboud University, 6525 ED Nijmegen, The Netherlands
| | - Jaroslav Fabian
- Institute for Theoretical Physics, University of Regensburg, 93040 Regensburg, Germany
| | - Antonio Polimeni
- Physics Department, Sapienza University of Rome, 00185 Rome, Italy
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47
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Katow H, Akashi R, Miyamoto Y, Tsuneyuki S. First-Principles Study of the Optical Dipole Trap for Two-Dimensional Excitons in Graphane. PHYSICAL REVIEW LETTERS 2022; 129:047401. [PMID: 35938993 DOI: 10.1103/physrevlett.129.047401] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/12/2020] [Revised: 03/31/2022] [Accepted: 06/13/2022] [Indexed: 06/15/2023]
Abstract
Recent studies on excitons in two-dimensional materials have been widely conducted for their potential usages for novel electronic and optical devices. Especially, sophisticated manipulation techniques of quantum degrees of freedom of excitons are in demand. In this Letter we propose a technique of forming an optical dipole trap for excitons in graphane, a two-dimensional wide gap semiconductor, based on first-principles calculations. We develop a first-principles method to evaluate the transition dipole matrix between excitonic states and combine it with the density functional theory and GW+BSE calculations. We reveal that in graphane the huge exciton binding energy and the large dipole moments of Wannier-like excitons enable us to induce the dipole trap of the order of meV depth and μm width. This Letter opens a new way to control light-exciton interacting systems based on newly developed numerically robust ab initio calculations.
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Affiliation(s)
- Hiroki Katow
- Photon Science Center, Graduate School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656, Japan
| | - Ryosuke Akashi
- Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - Yoshiyuki Miyamoto
- Research Center for Computational Design of Advanced Functional Materials, National Institute of Advanced Industrial Science and Technology (AIST), Central 2, Tsukuba, Ibaraki 305-8568, Japan
| | - Shinji Tsuneyuki
- Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
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48
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Zheng H, Zhai D, Yao W. Anomalous Magneto-Optical Response and Chiral Interface of Dipolar Excitons at Twisted Valleys. NANO LETTERS 2022; 22:5466-5472. [PMID: 35713477 DOI: 10.1021/acs.nanolett.2c01508] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
An anomalous magneto-optical spectrum is discovered for dipolar valley excitons in twisted double-layer transition metal dichalcogenides, where the in-plane magnetic field induces a sizable multiplet splitting of exciton states inside the light cone. Chiral dispersions of the split branches make possible an efficient optical injection of the unidirectional exciton current. We also find an analog effect with a modest heterostrain replacing the magnetic field for introducing large splitting and chiral dispersions in the light cone. Angular orientation of the photoinjected exciton flow can be controlled by strain, with left-right unidirectionality selected by circular polarization.
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Affiliation(s)
- Huiyuan Zheng
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Dawei Zhai
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
| | - Wang Yao
- Department of Physics, The University of Hong Kong, Hong Kong, China
- HKU-UCAS Joint Institute of Theoretical and Computational Physics at Hong Kong, Hong Kong, China
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49
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White SJU, Yang T, Dontschuk N, Li C, Xu ZQ, Kianinia M, Stacey A, Toth M, Aharonovich I. Electrical control of quantum emitters in a Van der Waals heterostructure. LIGHT, SCIENCE & APPLICATIONS 2022; 11:186. [PMID: 35725815 PMCID: PMC9209426 DOI: 10.1038/s41377-022-00877-7] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2022] [Revised: 06/01/2022] [Accepted: 06/07/2022] [Indexed: 05/27/2023]
Abstract
Controlling and manipulating individual quantum systems in solids underpins the growing interest in the development of scalable quantum technologies. Recently, hexagonal boron nitride (hBN) has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large bandgap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study the electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in an hBN-graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behavior. Finally, employing these devices we demonstrate a nearly-coherent source with linewidths of ~160 MHz. Our results enhance the potential of hBN for tunable solid-state quantum emitters for the growing field of quantum information science.
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Affiliation(s)
- Simon J U White
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Tieshan Yang
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Nikolai Dontschuk
- School of Physics, University of Melbourne, Parkville, VIC, 3010, Australia
| | - Chi Li
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Zai-Quan Xu
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Mehran Kianinia
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia
| | - Alastair Stacey
- School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | - Milos Toth
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
| | - Igor Aharonovich
- School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
- ARC Centre of Excellence for Transformative Meta-Optical Systems, University of Technology Sydney, Ultimo, NSW, 2007, Australia.
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50
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Qian C, Villafañe V, Soubelet P, Hötger A, Taniguchi T, Watanabe K, Wilson NP, Stier AV, Holleitner AW, Finley JJ. Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS_{2} Monolayers. PHYSICAL REVIEW LETTERS 2022; 128:237403. [PMID: 35749182 DOI: 10.1103/physrevlett.128.237403] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/08/2021] [Revised: 02/11/2022] [Accepted: 05/24/2022] [Indexed: 06/15/2023]
Abstract
Atomically thin semiconductors can be readily integrated into a wide range of nanophotonic architectures for applications in quantum photonics and novel optoelectronic devices. We report the observation of nonlocal interactions of "free" trions in pristine hBN/MoS_{2}/hBN heterostructures coupled to single mode (Q>10^{4}) quasi 0D nanocavities. The high excitonic and photonic quality of the interaction system stems from our integrated nanofabrication approach simultaneously with the hBN encapsulation and the maximized local cavity field amplitude within the MoS_{2} monolayer. We observe a nonmonotonic temperature dependence of the cavity-trion interaction strength, consistent with the nonlocal light-matter interactions in which the extent of the center-of-mass (c.m.) wave function is comparable to the cavity mode volume in space. Our approach can be generalized to other optically active 2D materials, opening the way toward harnessing novel light-matter interaction regimes for applications in quantum photonics.
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Affiliation(s)
- Chenjiang Qian
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Viviana Villafañe
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Pedro Soubelet
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander Hötger
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Nathan P Wilson
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Andreas V Stier
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department, Technische Universität München, Am Coulombwall 4, 85748 Garching, Germany
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