Direct Sub-Angstrom Imaging of a Crystal Lattice

Footprints of atomic-scale features in plasmonic nanoparticles as revealed by electron energy loss spectroscopy

We present a first-principles theoretical study of the atomistic footprints in the valence electron energy loss spectroscopy (EELS) of nanometer-size metallic particles. Charge density maps of excited plasmons and EEL spectra for specific electron paths through a nanoparticle (Na380 atom cluster) are modeled using ab initio calculations within time-dependent density functional theory. Our findings unveil the atomic-scale sensitivity of EELS within this low-energy spectral range. Whereas localized surface plasmons (LSPs) are particularly sensitive to the atomistic structure of the surface probed by the electron beam, confined bulk plasmons (CBPs) reveal quantum size effects within the nanoparticle's volume. Moreover, we prove that classical local dielectric theories mimicking the atomistic structure of the nanoparticles reproduce the LSP trends observed in quantum calculations, but fall short in describing the CBP behavior observed under different electron trajectories.

Achieving sub-0.5-angstrom-resolution ptychography in an uncorrected electron microscope

Subangstrom resolution has long been limited to aberration-corrected electron microscopy, where it is a powerful tool for understanding the atomic structure and properties of matter. Here, we demonstrate electron ptychography in an uncorrected scanning transmission electron microscope (STEM) with deep subangstrom spatial resolution down to 0.44 angstroms, exceeding the conventional resolution of aberration-corrected tools and rivaling their highest ptychographic resolutions​. Our approach, which we demonstrate on twisted two-dimensional materials in a widely available commercial microscope, far surpasses prior ptychographic resolutions (1 to 5 angstroms) of uncorrected STEMs. We further show how geometric aberrations can create optimized, structured beams for dose-efficient electron ptychography. Our results demonstrate that expensive aberration correctors are no longer required for deep subangstrom resolution.

Accelerating Quantum Materials Development with Advances in Transmission Electron Microscopy

Quantum materials are driving a technology revolution in sensing, communication, and computing, while simultaneously testing many core theories of the past century. Materials such as topological insulators, complex oxides, superconductors, quantum dots, color center-hosting semiconductors, and other types of strongly correlated materials can exhibit exotic properties such as edge conductivity, multiferroicity, magnetoresistance, superconductivity, single photon emission, and optical-spin locking. These emergent properties arise and depend strongly on the material's detailed atomic-scale structure, including atomic defects, dopants, and lattice stacking. In this review, we describe how progress in the field of electron microscopy (EM), including in situ and in operando EM, can accelerate advances in quantum materials and quantum excitations. We begin by describing fundamental EM principles and operation modes. We then discuss various EM methods such as (i) EM spectroscopies, including electron energy loss spectroscopy (EELS), cathodoluminescence (CL), and electron energy gain spectroscopy (EEGS); (ii) four-dimensional scanning transmission electron microscopy (4D-STEM); (iii) dynamic and ultrafast EM (UEM); (iv) complementary ultrafast spectroscopies (UED, XFEL); and (v) atomic electron tomography (AET). We describe how these methods could inform structure-function relations in quantum materials down to the picometer scale and femtosecond time resolution, and how they enable precision positioning of atomic defects and high-resolution manipulation of quantum materials. For each method, we also describe existing limitations to solve open quantum mechanical questions, and how they might be addressed to accelerate progress. Among numerous notable results, our review highlights how EM is enabling identification of the 3D structure of quantum defects; measuring reversible and metastable dynamics of quantum excitations; mapping exciton states and single photon emission; measuring nanoscale thermal transport and coupled excitation dynamics; and measuring the internal electric field and charge density distribution of quantum heterointerfaces- all at the quantum materials' intrinsic atomic and near atomic-length scale. We conclude by describing open challenges for the future, including achieving stable sample holders for ultralow temperature (below 10K) atomic-scale spatial resolution, stable spectrometers that enable meV energy resolution, and high-resolution, dynamic mapping of magnetic and spin fields. With atomic manipulation and ultrafast characterization enabled by EM, quantum materials will be poised to integrate into many of the sustainable and energy-efficient technologies needed for the 21st century.

Density functional theory study of Au-fcc/Ge and Au-hcp/Ge interfaces

In recent years, nanostructures with hexagonal polytypes of gold have been synthesised, opening new possibilities in nanoscience and nanotechnology. As bulk gold crystallizes in the fcc phase, surface effects can play an important role in stabilizing hexagonal gold nanostructures. Here, we investigate several heterostructures with Ge substrates, including the fcc and hcp phases of gold that have been observed experimentally. We determine and discuss their interfacial energies and optimized atomic arrangements, comparing the theory results with available experimental data. Our DFT calculations for the Au-fcc(011)/Ge(001) junction show how the presence of defects in the interface layer can help to stabilize the atomic pattern, consistent with microscopic images. Although the Au-hcp/Ge interface is characterized by a similar interface energy, it reveals large atomic displacements due to significant mismatch. Finally, analyzing the electronic properties, we demonstrate that Au/Ge systems have metallic character, but covalent-like bonding states between interfacial Ge and Au atoms are also present.

In Situ and Emerging Transmission Electron Microscopy for Catalysis Research

Catalysts are the primary facilitator in many dynamic processes. Therefore, a thorough understanding of these processes has vast implications for a myriad of energy systems. The scanning/transmission electron microscope (S/TEM) is a powerful tool not only for atomic-scale characterization but also in situ catalytic experimentation. Techniques such as liquid and gas phase electron microscopy allow the observation of catalysts in an environment conducive to catalytic reactions. Correlated algorithms can greatly improve microscopy data processing and expand multidimensional data handling. Furthermore, new techniques including 4D-STEM, atomic electron tomography, cryogenic electron microscopy, and monochromated electron energy loss spectroscopy (EELS) push the boundaries of our comprehension of catalyst behavior. In this review, we discuss the existing and emergent techniques for observing catalysts using S/TEM. Challenges and opportunities highlighted aim to inspire and accelerate the use of electron microscopy to further investigate the complex interplay of catalytic systems.

Research Progress on Metal-Organic Frameworks by Advanced Transmission Electron Microscopy

Metal-organic frameworks (MOFs), composed of metal nodes and inorganic linkers, are promising for a wide range of applications due to their unique periodic frameworks. Understanding structure-activity relationships can facilitate the development of new MOFs. Transmission electron microscopy (TEM) is a powerful technique to characterize the microstructures of MOFs at the atomic scale. In addition, it is possible to directly visualize the microstructural evolution of MOFs in real time under working conditions via in situ TEM setups. Although MOFs are sensitive to high-energy electron beams, much progress has been made due to the development of advanced TEM. In this review, we first introduce the main damage mechanisms for MOFs under electron-beam irradiation and two strategies to minimize these damages: low-dose TEM and cryo-TEM. Then we discuss three typical techniques to analyze the microstructure of MOFs, including three-dimensional electron diffraction, imaging using direct-detection electron-counting cameras, and iDPC-STEM. Groundbreaking milestones and research advances of MOFs structures obtained with these techniques are highlighted. In situ TEM studies are reviewed to provide insights into the dynamics of MOFs induced by various stimuli. Additionally, perspectives are analyzed for promising TEM techniques in the research of MOFs' structures.

Variational Convolutional Autoencoders for Anomaly Detection in Scanning Transmission Electron Microscopy

Identifying point defects and other structural anomalies using scanning transmission electron microscopy (STEM) is important to understand a material's properties caused by the disruption of the regular pattern of crystal lattice. Due to improvements in instrumentation stability and electron optics, atomic-resolution images with a field of view of several hundred nanometers can now be routinely acquired at 1-10 Hz frame rates and such data, which often contain thousands of atomic columns, need to be analyzed. To date, image analysis is performed largely manually, but recent developments in computer vision (CV) and machine learning (ML) now enable automated analysis of atomic structures and associated defects. Here, the authors report on how a Convolutional Variational Autoencoder (CVAE) can be utilized to detect structural anomalies in atomic-resolution STEM images. Specifically, the training set is limited to perfect crystal images , and the performance of a CVAE in differentiating between single-crystal bulk data or point defects is demonstrated. It is found that the CVAE can reproduce the perfect crystal data but not the defect input data. The disagreesments between the CVAE-predicted data for defects allows for a clear and automatic distinction and differentiation of several point defect types.

Fabrication of liquid cell for in situ transmission electron microscopy of electrochemical processes

Fundamentally understanding the complex electrochemical reactions that are associated with energy devices (e.g., rechargeable batteries, fuel cells and electrolyzers) has attracted worldwide attention. In situ liquid cell transmission electron microscopy (TEM) offers opportunities to directly observe and analyze in-liquid specimens without the need for freezing or drying, which opens up a door for visualizing these complex electrochemical reactions at the nano scale in real time. The key to the success of this technique lies in the design and fabrication of electrochemical liquid cells with thin but strong imaging windows. This protocol describes the detailed procedures of our established technique for the fabrication of such electrochemical liquid cells (~110 h). In addition, the protocol for the in situ TEM observation of electrochemical reactions by using the nanofabricated electrochemical liquid cell is also presented (2 h). We also show and analyze experimental results relating to the electrochemical reactions captured. We believe that this protocol will shed light on strategies for fabricating high-quality TEM liquid cells for probing dynamic electrochemical reactions in high resolution, providing a powerful research tool. This protocol requires access to a clean room equipped with specialized nanofabrication setups as well as TEM characterization equipment.

Evidence of Delta Phase of Fe in MBE-Grown Thin Epitaxial Films on GaAs

Fe/GaAs is an important system for the study of spin injection behavior that can vary with the nature and interfaces of Fe films. Here, we investigate the effect of interfacial strain on the microstructure, interfaces and phase-formation behavior in epitaxially grown Fe films. To vary the strain, we have characterized Fe films of various thicknesses ranging from 10 to 1000 nm which were grown using molecular beam epitaxy on GaAs (011) and AlGaAs (001) substrates. High resolution X-ray diffraction studies revealed that films with higher thicknesses exhibited an equilibrium α-Fe phase, while the films with less than 10 nm thicknesses indicated the presence of d-Fe. Transmission electron microscopy revealed the interface for 10-nm-thick films had strain lobes with no interfacial phase formation for films deposited at room temperature. At a higher deposition temperature of 175 °C, similar strain lobes were observed for a 10-nm-thick film. Extended annealing at 200 °C transformed the metastable d-Fe phase to an equilibrium α-Fe. However, at higher temperature, the interface contained an intermixing layer of (FeAl)GaAs. We demonstrate that the interfacial strain plays a major role in stabilizing the metastable d-Fe on GaAs.

Single-photoelectron collection efficiency in 4D ultrafast electron microscopy

In femtosecond (fs) 4D ultrafast electron microscopy (UEM), a tradeoff is made between photoelectrons per packet and time resolution. One consequence of this can be longer-than-desirable acquisition times for low-density packets, and particularly for low repetition rates when complete photothermal dissipation is required. Thus, gaining an understanding of photoelectron trajectories in the gun region is important for identifying factors that limit collection efficiency (CE; fraction of photoelectrons that enter the illumination system). Here, we continue our work on the systematic study of photoelectron trajectories in the gun region of a Thermo Fisher/FEI Tecnai Femto UEM, focusing specifically on CE in the single-electron regime. Using General Particle Tracer, calculated field maps, and the exact architecture of the Tecnai Femto UEM, we simulated the effects of fs laser parameters and key gun elements on CE. The results indicate CE strongly depends upon the laser spot size on the source, the (unbiased) Wehnelt aperture diameter, and the incident photon energy. The CE dispersion with laser spot size is found to be strongly dependent on aperture diameter, being nearly dispersionless for the largest apertures. A gun crossover is also observed, with the beam-waist position being dependent on the aperture diameter, further illustrating that the Wehnelt aperture acts as a simple, fixed electrostatic lens in UEM mode. This work provides further insights into the operational aspects of fs 4D UEM.

Colloidal stability and aggregation kinetics of nanocrystal CdSe/ZnS quantum dots in aqueous systems: Effects of ionic strength, electrolyte type, and natural organic matter

Understanding the stability and aggregation of nanoparticles in aqueous milieu is critical for assessing their behavior in the natural and engineered environmental systems and establishing their threat to human and ecosystems health. In this study, the colloidal stability and aggregation kinetics of nanocrystal quantum dots (QDs) —CdSe/ZnS QDs—were thoroughly explored under a wide range of aqueous environmental conditions. The z-average hydrodynamic diameters (z-avg. HDs) and zeta potential (ξ potential) of CdSe/ZnS QDs were measured in monovalent electrolyte (NaCl) and divalent electrolyte (CaCl2) solutions in both the absence and presence of natural organic matter (NOM)—Suwannee River natural organic matter, SRNOM to assess the dynamic growth of these nanoaggregate-QD-complexes, and the evaluation of their colloidal stability. Results show that CaCl2 was more effective to destabilize the QDs compared to NaCl at similar concentrations. An increase in NaCl concentration from 0.01 to 3.5 M increased the z-avg. HD of QD aggregates from 61.4 nm to 107.2 nm. The aggregation rates of QDs increased from 0.007 to 0.042 nm·s−1 with an increase in ionic strength from 0.5 to 3.5 M NaCl solutions, respectively. In the presence of Na+ cations, the aggregation of QDs was limited as steric forces generated by the original surface coating of QDs prevailed. In the presence of CaCl2, the aggregation of QDs was observed at a low concentration of CaCl2 (0.0001 M) with a z-avg. HD of 74.2 nm that significantly increased when the CaCl2 was higher than 0.002 M. Larger sizes of QD aggregates were observed at each level of CaCl2 concentration in suspensions of 0.002–0.1 M, as the z-avg. HDs of QDs increased from 125.1 to 560.4 nm, respectively. In the case of CaCl2, an increase in aggregation rates occurred from 0.035 to 0.865 nm·s−1 with an increase in ionic strength from 0.0001 M to 0.004 M, respectively. With Ca2+ cations, the aggregation of QDs was enhanced due to the bridging effects from the formation of complexes between Ca2+ cations in solution and the carboxyl group located on the surface coating of QDs. In the presence of SRNOM, the aggregation of QDs was enhanced in both monovalent and divalent electrolyte solutions. The degree of aggregation formation between QDs through cation-NOM bridges was superior for Ca2+ cations compared to Na+ cations. The presence of SRNOM resulted in a small increase in the size of the QD aggregates for each of NaCl concentrations tested (i.e., 0.01 to 3.5 M, except 0.1 M), and induced a monodispersed and narrower size distribution of QDs suspended in the monovalent electrolyte NaCl concentrations. In the presence of SRNOM, the aggregation rates of QDs increased from 0.01 to 0.024 nm 1 with the increase of NaCl concentrations from 0.01 to 2 M, respectively. The presence of SRNOM in QDs suspended in divalent electrolyte CaCl2 solutions enhanced the aggregation of QDs, resulting in the increase of z-avg. HDs of QDs by approximately 19.3%, 42.1%, 13.8%, 1.5%, and 24.8%, at CaCl2 concentrations of 0.002, 0.003, 0.005, 0.01, and 0.1 M, respectively. In the case of CaCl2, an increase in aggregation rates occurred from 0.035 to 0.865 nm·s−1 with an increase in ionic strength from 0.0001 to 0.004 M, respectively. Our findings demonstrated the colloidal stability of QDs and cations-NOM-QD nanoparticle complexes under a broad spectrum of conditions encountered in the natural and engineered environment, indicating and the potential risks from these nanoparticles in terms of human and ecosystem health.

STEM Tools for Semiconductor Characterization: Beyond High-Resolution Imaging

The smart engineering of novel semiconductor devices relies on the development of optimized functional materials suitable for the design of improved systems with advanced capabilities aside from better efficiencies. Thereby, the characterization of these materials at the highest level attainable is crucial for leading a proper understanding of their working principle. Due to the striking effect of atomic features on the behavior of semiconductor quantum- and nanostructures, scanning transmission electron microscopy (STEM) tools have been broadly employed for their characterization. Indeed, STEM provides a manifold characterization tool achieving insights on, not only the atomic structure and chemical composition of the analyzed materials, but also probing internal electric fields, plasmonic oscillations, light emission, band gap determination, electric field measurements, and many other properties. The emergence of new detectors and novel instrumental designs allowing the simultaneous collection of several signals render the perfect playground for the development of highly customized experiments specifically designed for the required analyses. This paper presents some of the most useful STEM techniques and several strategies and methodologies applied to address the specific analysis on semiconductors. STEM imaging, spectroscopies, 4D-STEM (in particular DPC), and in situ STEM are summarized, showing their potential use for the characterization of semiconductor nanostructured materials through recent reported studies.

Controllable Doping in 2D Layered Materials

For each generation of semiconductors, the issue of doping techniques is always placed at the top of the priority list since it determines whether a material can be used in the electronic and optoelectronic industry or not. When it comes to 2D materials, significant challenges have been found in controllably doping 2D semiconductors into p- or n-type, let alone developing a continuous control of this process. Here, a unique self-modulated doping characteristic in 2D layered materials such as PtSSe, PtS_0.8 Se_1.2 , PdSe₂ , and WSe₂ is reported. The varying number of vertically stacked-monolayers is the critical factor for controllably tuning the same material from p-type to intrinsic, and to n-type doping. Importantly, it is found that the thickness-induced lattice deformation makes defects in PtSSe transit from Pt vacancies to anion vacancies based on dynamic and thermodynamic analyses, which leads to p- and n-type conductance, respectively. By thickness-modulated doping, WSe₂ diode exhibits a high rectification ratio of 4400 and a large open-circuit voltage of 0.38 V. Meanwhile, the PtSSe detector overcomes the shortcoming of large dark-current in narrow-bandgap optoelectronic devices. All these findings provide a brand-new perspective for fundamental scientific studies and applications.

Advances and Applications of Atomic-Resolution Scanning Transmission Electron Microscopy

Although scanning transmission electron microscopy (STEM) images of individual heavy atoms were reported 50 years ago, the applications of atomic-resolution STEM imaging became wide spread only after the practical realization of aberration correctors on field-emission STEM/TEM instruments to form sub-Ångstrom electron probes. The innovative designs and advances of electron optical systems, the fundamental understanding of electron–specimen interaction processes, and the advances in detector technology all played a major role in achieving the goal of atomic-resolution STEM imaging of practical materials. It is clear that tremendous advances in computer technology and electronics, image acquisition and processing algorithms, image simulations, and precision machining synergistically made atomic-resolution STEM imaging routinely accessible. It is anticipated that further hardware/software development is needed to achieve three-dimensional atomic-resolution STEM imaging with single-atom chemical sensitivity, even for electron-beam-sensitive materials. Artificial intelligence, machine learning, and big-data science are expected to significantly enhance the impact of STEM and associated techniques on many research fields such as materials science and engineering, quantum and nanoscale science, physics and chemistry, and biology and medicine. This review focuses on advances of STEM imaging from the invention of the field-emission electron gun to the realization of aberration-corrected and monochromated atomic-resolution STEM and its broad applications.

Mechanism of Electron-Beam Manipulation of Single-Dopant Atoms in Silicon

The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the manipulation of surface atoms, but at a disadvantage due to their need to bring a physical tip into contact with the sample. This has prompted interest in electron-beam techniques, followed by the first proof-of-principle experiment of bismuth dopant manipulation in crystalline silicon. Here, we use first-principles modeling to discover a novel indirect exchange mechanism that allows electron impacts to non-destructively move dopants with atomic precision within the silicon lattice. However, this mechanism only works for the two heaviest group V donors with split-vacancy configurations, Bi and Sb. We verify our model by directly imaging these configurations for Bi and by demonstrating that the promising nuclear spin qubit Sb can be manipulated using a focused electron beam.

Identification and correction of temporal and spatial distortions in scanning transmission electron microscopy

Scanning transmission electron microscopy (STEM) has become the technique of choice for quantitative characterization of atomic structure of materials, where the minute displacements of atomic columns from high-symmetry positions can be used to map strain, polarization, octahedra tilts, and other physical and chemical order parameter fields. The latter can be used as inputs into mesoscopic and atomistic models, providing insight into the correlative relationships and generative physics of materials on the atomic level. However, these quantitative applications of STEM necessitate understanding the microscope induced image distortions and developing the pathways to compensate them both as part of a rapid calibration procedure for in situ imaging, and the post-experimental data analysis stage. Here, we explore the spatiotemporal structure of the microscopic distortions in STEM using multivariate analysis of the atomic trajectories in the image stacks. Based on the behavior of principal component analysis (PCA), we develop the Gaussian process (GP)-based regression method for quantification of the distortion function. The limitations of such an approach and possible strategies for implementation as a part of in-line data acquisition in STEM are discussed. The analysis workflow is summarized in a Jupyter notebook that can be used to retrace the analysis and analyze the reader's data.

Optical Modulation of Electron Beams in Free Space

We exploit free-space interactions between electron beams and tailored light fields to imprint on-demand phase profiles on the electron wave functions. Through rigorous semiclassical theory involving a quantum description of the electrons, we show that monochromatic optical fields focused in vacuum can be used to correct electron beam aberrations and produce selected focal shapes. Stimulated elastic Compton scattering is exploited to imprint the required electron phase, which is proportional to the integral of the optical field intensity along the electron path and depends on the transverse beam position. The required light intensities are attainable in currently available ultrafast electron microscope setups, thus opening the field of free-space optical manipulation of electron beams.

Control of quantum electrodynamical processes by shaping electron wavepackets

Fundamental quantum electrodynamical (QED) processes, such as spontaneous emission and electron-photon scattering, encompass phenomena that underlie much of modern science and technology. Conventionally, calculations in QED and other field theories treat incoming particles as single-momentum states, omitting the possibility that coherent superposition states, i.e., shaped wavepackets, can alter fundamental scattering processes. Here, we show that free electron waveshaping can be used to design interferences between two or more pathways in a QED process, enabling precise control over the rate of that process. As an example, we show that free electron waveshaping modifies both spatial and spectral characteristics of bremsstrahlung emission, leading for instance to enhancements in directionality and monochromaticity. The ability to tailor general QED processes opens up additional avenues of control in phenomena ranging from optical excitation (e.g., plasmon and phonon emission) in electron microscopy to free electron lasing in the quantum regime.

Light-Driven Alcohol Splitting by Heterogeneous Photocatalysis: Recent Advances, Mechanism and Prospects

Splitting of alcohols into hydrogen and corresponding carbonyl compounds, also called acceptorless alcohol dehydrogenation, is of great significance for both synthetic chemistry and hydrogen production. Light-Driven Alcohol Splitting (LDAS) by heterogeneous photocatalysis is a promising route to achieve such transformations, and it possesses advantages including high selectivity of the carbonyl compounds, extremely mild reaction conditions (room temperature and irradiation of visible light) and easy separation of the photocatalysts from the reaction mixtures. Because a variety of alcohols can be derived from biomass, LDAS can also be regarded as one of the most sustainable approaches for hydrogen production. In this Review, recent advances in the LDAS catalyzed by the heterogeneous photocatalysts are summarized, focusing on the mechanistic insights for the LDAS and aspects that influence the performance of the photocatalysts from viewpoints of metallic co-catalysts, semiconductors, and metal/semiconductor interfaces. In addition, challenges and prospects have been discussed in order to present a complete picture of this field.

Atomic-scale study of nanocatalysts by aberration-corrected electron microscopy

Aberration-corrected electron microscopy (AC-EM) including transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) has become one of the most powerful technologies in the studies of nanocatalysts. With the current spatial resolution of sub-0.5 Å and energy resolution of 10 meV, AC-EM can quantificationally articulate the connection between catalytic properties and atomic configurations of nanocatalysts. However, the restricted irradiation sensitive characteristics of specimens pose an obstacle to solve their intrinsic structure. Low-dose imaging should be applied to overcome this problem. In addition, the choice of appropriate imaging method is also crucial to tackle specific structural problems of nanocatalysts. On the basis of careful management of electron dose and selection of suitable imaging method,in situgas and liquid S/TEM are able to reveal the structure evolution of nanocatalysts in real-time. Further combination with residual gas analysis would deepen the understanding of the catalytic reaction.

In Situ TEM Studies of Catalysts Using Windowed Gas Cells

For decades, differentially pumped environmental transmission electron microscopy has been a powerful tool to study dynamic structural evolution of catalysts under a gaseous environment. With the advancement of micro-electromechanical system-based technologies, windowed gas cell became increasingly popular due to its ability to achieve high pressure and its compatibility to a wide range of microscopes with minimal modification. This enables a series of imaging and analytical technologies such as atomic resolution imaging, spectroscopy, and operando, revealing details that were unprecedented before. By reviewing some of the recent work, we demonstrate that the windowed gas cell has the unique ability to solve complicated catalysis problems. We also discuss what technical difficulties need to be addressed and provide an outlook for the future of in situ environmental transmission electron microscopy (TEM) technologies and their application to the field of catalysis development.

Insight into long-period pattern by depth sectioning using aberration-corrected scanning transmission electron microscope

Long-period patterns (LPPs) are widely observed by transmission electron microscopy (TEM) in the study of nanoscale materials. Identifying the origin of LPPs is of significant importance when interpreting TEM images, and for an in-depth understanding of material characteristics. However, the two most common LPP categories, modulated structure and moiré patterns, are not easily differentiated by conventional TEM (CTEM). In this work, an LPP was observed in Cu_2-xSe nanoplates by CTEM. And then the depth sectioning with an aberration-corrected scanning transmission electron microscope (AC STEM) has been performed to determine the LPP type. Two misorientated layers were recognized from the depth-series of atomic resolution images of an LPP region, confirming the LPP is a moiré pattern caused by two twisted stacked crystal flakes which commonly exists in nanosized materials. This depth sectioning method is generally applicable for structural characterization of layered systems, and is a powerful approach for the in-situ structural probe of nanomaterials. It is promising to be extended to fast three-dimensional (3D) reconstruction.

Influence of temperature on the displacement threshold energy in graphene

The atomic structure of nanomaterials is often studied using transmission electron microscopy. In addition to image formation, the energetic electrons impinging on the sample may also cause damage. In a good conductor such as graphene, the damage is limited to the knock-on process caused by elastic electron-nucleus scattering. This process is determined by the kinetic energy an atom needs to be sputtered, i.e. its displacement threshold energy E_d. This is typically assumed to have a fixed value for all electron impacts on equivalent atoms within a crystal. Here we show using density functional tight-binding simulations that the displacement threshold energy is affected by thermal perturbations of atoms from their equilibrium positions. This effect can be accounted for in the estimation of the displacement cross section by replacing the constant threshold energy value with a distribution. Our refined model better describes previous precision measurements of graphene knock-on damage, and should be considered also for other low-dimensional materials.

Building and exploring libraries of atomic defects in graphene: Scanning transmission electron and scanning tunneling microscopy study

The presence and configurations of defects are primary components determining materials functionality. Their population and distribution are often nonergodic and dependent on synthesis history, and therefore rarely amenable to direct theoretical prediction. Here, dynamic electron beam-induced transformations in Si deposited on a graphene monolayer are used to create libraries of possible Si and carbon vacancy defects. Deep learning networks are developed for automated image analysis and recognition of the defects, creating a library of (meta) stable defect configurations. Density functional theory is used to estimate atomically resolved scanning tunneling microscopy (STM) signatures of the classified defects from the created library, allowing identification of several defect types across imaging platforms. This approach allows automatic creation of defect libraries in solids, exploring the metastable configurations always present in real materials, and correlative studies with other atomically resolved techniques, providing comprehensive insight into defect functionalities.

Mixed-Matrix Membranes Formed from Imide-Functionalized UiO-66-NH2 for Improved Interfacial Compatibility

Mixed-matrix membranes (MMMs) formed by dispersing metal-organic framework (MOF) particles in polymers have attracted significant attention because these composite systems can potentially surpass the separation performance of pure polymers alone. However, performance improvements are often unrealized because of poor interfacial compatibility between the MOF and the polymer, which results in interfacial defects. From a practical perspective, strategies are needed to address these defects so that MMMs can be deployed in real-world separation processes. From a fundamental perspective, strategies are needed to reliably form defect-free MMMs so that transport models can be applied to estimate pure MOF property sets, thereby enabling the development of robust structure-property relationships. To address these interfacial challenges, we have developed a method to surface-functionalize a UiO-66-NH₂ MOF with a nanoscopic shell of covalently tethered 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-Durene oligomers. When combined with a high-molecular-weight polymer of identical chemical structure to that of the imide-functional MOF surface, defect-free MMMs with uniform particle dispersions can be formed. With this technique, both permeabilities and selectivities of select gases in the MMMs were improved at loadings ranging from 5 to 40 wt %. At a 40 wt % loading, CO₂ permeability and CO₂/CH₄ selectivity were enhanced by 48 and 15%, respectively. Additionally, pure MOF permeabilities for H₂, N₂, O₂, CH₄, and CO₂ were predicted by the Maxwell model.

Rational Design of Atomic Layers of Pt Anchored on Mo2 C Nanorods for Efficient Hydrogen Evolution over a Wide pH Range

Transition metal carbide compound has been extensively investigated as a catalyst for hydrogenation, for example, due to its noble metal-like properties. Herein a facile synthetic strategy is applied to control the thickness of atomic-layer Pt clusters strongly anchored on N-doped Mo₂ C nanorods (Pt/N-Mo₂ C) and it is found that the Pt atomic layers modify Mo₂ C function as a high-performance and robust catalyst for hydrogen evolution. The optimized 1.08 wt% Pt/N-Mo₂ C exhibits 25-fold, 10-fold, and 15-fold better mass activity than the benchmark 20 wt% Pt/C in neutral, acidic, and alkaline media, respectively. This catalyst also represents an extremely low overpotential of -8.3 mV at current density of 10 mA cm^-2 , much better than the majority of reported electrocatalysts and even the commercial reference catalyst (20 wt%) Pt/C. Furthermore, it exhibits an outstanding long-term operational durability of 120 h. Theoretical calculation predicts that the ultrathin layer of Pt clusters on Mo-Mo₂ C yields the lowest absolute value of ΔG_H* . Experimental results demonstrate that the atomic layer of Pt clusters anchored on Mo₂ C substrate greatly enhances electron and mass transportation efficiency and structural stability. These findings could provide the foundation for developing highly effective and scalable hydrogen evolution catalysts.

Direct Cation Exchange in Monolayer MoS_{2} via Recombination-Enhanced Migration

In addition to their unique optical and electronic properties, two-dimensional materials provide opportunities to directly observe atomic-scale defect dynamics. Here we use scanning transmission electron microscopy to observe substitutional Re impurities in monolayer MoS_{2} undergo direct exchanges with neighboring Mo atoms in the lattice. Density-functional-theory calculations find that the energy barrier for direct exchange, a process that has only been studied as a diffusion mechanism in bulk materials, is too large for either thermal activation or energy directly transferred from the electron beam. The presence of multiple sulfur vacancies next to the exchanged Re-Mo pair, as observed by electron microscopy, does not lower the energy barrier sufficiently to account for the observed atomic exchange. Instead, the calculations find that a Re dopant and surrounding sulfur vacancies introduce an ever-changing set of deep levels in the energy gap. We propose that these levels mediate an "explosive" recombination-enhanced migration via multiple electron-hole recombination events. As a proof of concept, we also show that Re-Mo direct exchange can be triggered via controlled creation of sulfur vacancies. The present experimental and theoretical findings lay a fundamental framework towards manipulating single substitutional dopants in two-dimensional materials.

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM

This paper presents a comprehensive investigation of an extended method to determine composition of materials by scanning transmission electron microscopy (STEM) high angle annular darkfield (HAADF) images and using complementary multislice simulations. The main point is to understand the theoretical capabilities of the algorithm and address the intrinsic limitations of using STEM HAADF intensities for composition determination. A special focus is the potential of the method regarding single-atom accuracy. All-important experimental parameters are included into the multislice simulations to ensure the best possible fit between simulation and experiment. To demonstrate the capabilities of the extended method, results for three different technical important semiconductor samples are presented. Overall the method shows a high lateral resolution combined with a high accuracy towards single-atom accuracy.

Atomic Resolution Defocused Electron Ptychography at Low Dose with a Fast, Direct Electron Detector

Electron ptychography has recently attracted considerable interest for high resolution phase-sensitive imaging. However, to date studies have been mainly limited to radiation resistant samples as the electron dose required to record a ptychographic dataset is too high for use with beam-sensitive materials. Here we report defocused electron ptychography using a fast, direct-counting detector to reconstruct the transmission function, which is in turn related to the electrostatic potential of a two-dimensional material at atomic resolution under various low dose conditions.

Subatomic Channeling and Helicon-Type Beams in SrTiO_{3}

Inspired by recent experimental subatomic measurements using analytical aberration-corrected scanning transmission electron microscopes, we study electron probe propagation in crystalline SrTiO_{3} at the subatomic length scale. Here, we report the existence of subatomic channeling and the formation of a helicon-type beam at this scale. The results of beam propagation simulations, which are performed at various crystal temperatures, STEM probe convergence angles (10-50 mrad), and beam energies (80-300 keV), showed that reducing the ambient temperature can enhance the subatomic channeling and STEM probe parameters can be used to control the features of helicon-type beams.

Differentiating Polymorphs in Molybdenum Disulfide via Electron Microscopy

The presence of rich polymorphs and stacking polytypes in molybdenum disulfide (MoS₂ ) endows it with a diverse range of electrical, catalytic, optical, and magnetic properties. This has stimulated a lot of interest in the unique properties associated with each polymorph. Most techniques used for polymorph identification in MoS₂ are macroscopic techniques that sample averaged properties due to their limited spatial resolution. A reliable way of differentiating the atomic structure of different polymorphs is needed in order to understand their growth dynamics and establish the correlation between structure and properties. Herein, the use of electron microscopy for identifying the atomic structures of several important polymorphs in MoS₂ , some of which are the subjects of mistaken assignment in the literature, is discussed. In particular, scanning transmission electron microscopy-annular dark field imaging has emerged as the most effective and reliable approach for identifying the different phases in MoS₂ and other 2D materials because its images can be directly correlated to the atomic structures. Examples of the identification of polymorphs grown under different conditions in molecular beam epitaxy or chemical vapor deposition, for example, 3R, 1T, 1T'-phases, and 1T'-edges, are presented, including their atomic structures, fascinating properties, growth methods, and corresponding thermodynamic stabilities.

Hollow Electron Ptychographic Diffractive Imaging

We report a method for quantitative phase recovery and simultaneous electron energy loss spectroscopy analysis using ptychographic reconstruction of a data set of "hollow" diffraction patterns. This has the potential for recovering both structural and chemical information at atomic resolution with a new generation of detectors.

Probing the Internal Atomic Charge Density Distributions in Real Space

Probing the charge density distributions in materials at atomic scale remains an extremely demanding task, particularly in real space. However, recent advances in differential phase contrast-scanning transmission electron microscopy (DPC-STEM) bring this possibility closer by directly visualizing the atomic electric field. DPC-STEM at atomic resolutions measures how a sub-angstrom electron probe passing through a material is affected by the atomic electric field, the field between the nucleus and the surrounding electrons. Here, we perform a fully quantitative analysis which allows us to probe the charge density distributions inside atoms, including both the positive nuclear and the screening electronic charges, with subatomic resolution and in real space. By combining state-of-the-art DPC-STEM experiments with advanced electron scattering simulations we are able to map the spatial distribution of the electron cloud within individual atomic columns. This work constitutes a crucial step toward the direct atomic scale determination of the local charge redistributions and modulations taking place in materials systems.

Sub-Ångstrom electric field measurements on a universal detector in a scanning transmission electron microscope

Scanning transmission electron microscopy (STEM) excels in accessing atomic-scale structure and chemistry. Enhancing our ability to directly image the functionalities of local features in materials has become one of the most important topics in the future development of STEM. Recently, differential phase contrast (DPC) imaging has been utilized to map the internal electric and magnetic fields in materials from nanoscale features such as p-n junctions, skyrmions, and even from individual atoms. Here, we use an ultra-low noise SCMOS detector in as the diffraction plane camera to collect four-dimensional (4D) datasets. The high angular resolution, efficient high-SNR acquisition, and modifiability of the camera allow it to function as a universal detector, where STEM imaging configurations, such as DPC, bright field, annular bright field, and annular dark field can all be reconstructed from a single 4D dataset. By examining a distorted perovskite, DyScO3, which possesses projected lattice spacings as small as 0.83 Å, we demonstrate DPC spatial resolution almost reaching the information limit of a 100 keV electron beam. In addition, the perovskite has ordered O-coordinations with alternating octahedral tilts, which can be quantitatively measured with single degree accuracy by taking advantage of DPC's sensitivity to light atoms. The results, acquired on a standard Ronchigram camera as opposed to a specialized DPC detector, open up new opportunities to understand and design functional materials and devices that involve lattice and charge coupling at nano- and atomic-scales.

Exploring the capabilities of monochromated electron energy loss spectroscopy in the infrared regime

Monochromated electron energy loss spectroscopy (EELS) is one of the leading techniques to study materials properties that correspond to low (<5 eV) energy losses (i.e. band-gaps, plasmons, and excitons) with nanoscale spatial resolution. Recently a new generation of monochromators have become available, opening regimes and unlocking excitations that were previously unobservable in the electron microscope. The capabilities of these new instruments are still being explored, and here we study the effect of monochromation on various aspects of EELS analysis in the infrared (<1 eV) regime. We investigate the effect of varying levels of monochromation on energy resolution, zero-loss peak (ZLP) tail reduction, ZLP tail shape, signal-to-noise-ratio, and spatial resolution. From these experiments, the new capabilities of monochromated EELS are shown to be highly promising for the future of localized spectroscopic analysis.

Attainment of 40.5 pm spatial resolution using 300 kV scanning transmission electron microscope equipped with fifth-order aberration corrector

The achievement of a fine electron probe for high-resolution imaging in scanning transmission electron microscopy requires technological developments, especially in electron optics. For this purpose, we developed a microscope with a fifth-order aberration corrector that operates at 300 kV. The contrast flat region in an experimental Ronchigram, which indicates the aberration-free angle, was expanded to 70 mrad. By using a probe with convergence angle of 40 mrad in the scanning transmission electron microscope at 300 kV, we attained the spatial resolution of 40.5 pm, which is the projected interatomic distance between Ga-Ga atomic columns of GaN observed along [212] direction.

The Influence of Beam Broadening on the Spatial Resolution of Annular Dark Field Scanning Transmission Electron Microscopy

The spatial resolution of aberration-corrected annular dark field scanning transmission electron microscopy was studied as function of the vertical position z within a sample. The samples consisted of gold nanoparticles (AuNPs) positioned in different horizontal layers within aluminum matrices of 0.6 and 1.0 µm thickness. The highest resolution was achieved in the top layer, whereas the resolution was reduced by beam broadening for AuNPs deeper in the sample. To examine the influence of the beam broadening, the intensity profiles of line scans over nanoparticles at a certain vertical location were analyzed. The experimental data were compared with Monte Carlo simulations that accurately matched the data. The spatial resolution was also calculated using three different theoretical models of the beam blurring as function of the vertical position within the sample. One model considered beam blurring to occur as a single scattering event but was found to be inaccurate for larger depths of the AuNPs in the sample. Two models were adapted and evaluated that include estimates for multiple scattering, and these described the data with sufficient accuracy to be able to predict the resolution. The beam broadening depended on z 1.5 in all three models.

Providing sustainable catalytic solutions for a rapidly changing world: a summary and recommendations for urgent future action

In addition to summarizing the main thrusts of each paper presented at this Discussion, other urgent issues involving the role (and characterization) of new catalysts for eliminating oxides of nitrogen, for using CO₂ liberated from steel mills, for fuel cells and the need for rapid decarbonization of fossil fuels are outlined.This article is part of a discussion meeting issue 'Providing sustainable catalytic solutions for a rapidly changing world'.

Large Scale Two-Dimensional Flux-Closure Domain Arrays in Oxide Multilayers and Their Controlled Growth

Ferroelectric flux-closures are very promising in high-density storage and other nanoscale electronic devices. To make the data bits addressable, the nanoscale flux-closures are required to be periodic via a controlled growth. Although flux-closure quadrant arrays with 180° domain walls perpendicular to the interfaces (V-closure) have been observed in strained ferroelectric PbTiO₃ films, the flux-closure quadrants therein are rather asymmetric. In this work, we report not only a periodic array of the symmetric flux-closure quadrants with 180° domain walls parallel to the interfaces (H-closure) but also a large scale alternative stacking of the V- and H-closure arrays in PbTiO₃/SrTiO₃ multilayers. On the basis of a combination of aberration-corrected scanning transmission electron microscopic imaging and phase field modeling, we establish the phase diagram in the layer-by-layer two-dimensional arrays versus the thickness ratio of adjacent PbTiO₃ films, in which energy competitions play dominant roles. The manipulation of these flux-closures may stimulate the design and development of novel nanoscale ferroelectric devices with exotic properties.

Exceptional increase in the creep life of magnesium rare-earth alloys due to localized bond stiffening

Several recent papers report spectacular, and unexpected, order of magnitude improvement in creep life of alloys upon adding small amounts of elements like zinc. This microalloying effect raises fundamental questions regarding creep deformation mechanisms. Here, using atomic-scale characterization and first principles calculations, we attribute the 600% increase in creep life in a prototypical Mg-rare earth (RE)-Zn alloy to multiple mechanisms caused by RE-Zn bonding-stabilization of a large volume fraction of strengthening precipitates on slip planes, increase in vacancy diffusion barrier, reduction in activated cross-slip, and enhancement of covalent character and bond strength around Zn solutes along the c-axis of Mg. We report that increased vacancy diffusion barrier, which correlates with the observed 25% increase in interplanar bond stiffness, primarily enhances the high-temperature creep life. Thus, we demonstrate that an approach of local, randomized tailoring of bond stiffness via microalloying enhances creep performance of alloys.