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Yang G, Zhu W, Zhang J, Zheng H, Wu Y, Zhang H, Ye G, Su D, Zhang Y, Cao C, Lu X, Yuan H, Liu Y. Orientation-dependent superconductivity and electronic structure of the rare-earth metal/KTaO 3interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2025; 37:215001. [PMID: 40306301 DOI: 10.1088/1361-648x/add2bf] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/26/2024] [Accepted: 04/30/2025] [Indexed: 05/02/2025]
Abstract
The recent discovery of orientation-dependent superconductivity in KTaO3-based interfaces has attracted considerable interest, while the underlying origin remains an open question. Here we report a different approach to tune the interfacial electron gas and superconductivity by forming interfaces between rare-earth (RE) metals (RE being La, Ce, Eu) and KTaO3substrates with different orientations. We found that the interfacial superconductivity is strongest for the Eu/KTaO3interfaces, becomes weaker in La/KTaO3and is absent in Ce/KTaO3. Usingin-situphotoemission, we observed distinct valence bands associated with RE metals, as well as a pronounced orientation dependence in the interfacial electronic structure, which can be linked to the orientation-dependent superconductivity. The photoemission spectra show similar double-peak structures for the (111) and (110) oriented interfaces, with an energy separation close to the LO4 phonon of KTaO3. Detailed analyses suggest that this double-peak structure could be attributed to electron-phonon coupling, which might be relevant for the interfacial superconductivity.
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Affiliation(s)
- Guowei Yang
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Weifan Zhu
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Jiawen Zhang
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Hao Zheng
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yi Wu
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Huali Zhang
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Ge Ye
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Dajun Su
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yanan Zhang
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Chao Cao
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Xin Lu
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Huiqiu Yuan
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yang Liu
- Center for Correlated Matter and School of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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2
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Zhang H, Xiao Y, Gao Q, Wu N, Zhou S, Wang Y, Wang M, Tian D, Chen L, Qi W, Zheng D, Zhang J, Han F, Yang H, Liu B, Chen Y, Hu F, Shen B, Sun J, Zhao W, Zhang J. Magnetotransport evidence for the coexistence of two-dimensional superconductivity and ferromagnetism at (111)-oriented a-CaZrO 3/KTaO 3 interfaces. Nat Commun 2025; 16:3035. [PMID: 40155606 PMCID: PMC11953368 DOI: 10.1038/s41467-025-58300-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/31/2024] [Accepted: 03/14/2025] [Indexed: 04/01/2025] Open
Abstract
Exploring the intricate interplay between magnetism and superconductivity is crucial for unveiling the underlying mechanisms of unconventional superconductivity. Here, we report on the magnetotransport evidence for the coexistence of a two-dimensional (2D) superconducting state and a 2D ferromagnetic state at the interface between amorphous CaZrO3 film and (111)-oriented KTaO3 single crystal. Remarkably, the fingerprint of ferromagnetism, i.e., hysteretic magnetoresistance loops, is observed in the superconducting state. The butterfly-shaped hysteresis with twin peaks emerges against the background of superconducting zero resistance, and the peak amplitude increases with the sweep rate of the magnetic field, indicating that the magnetization dynamics are at play in the superconducting state. Moreover, the magnetoresistance hysteresis is strongly dependent on temperature, achieving a maximum near the superconducting transition temperature. This behavior is well described by the thermal activated phase slip model. Density function theory (DFT) calculations suggest that the magnetic moment is primarily contributed by the Ta 5dyz orbital, and the Stoner ferromagnetism is identified. Our findings provide new insights into the interaction of magnetism and superconductivity at KTaO3-based oxide heterointerfaces.
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Grants
- This work has been supported by the Science Center of the National Science Foundation of China (Grant No. 52088101(B. G. S.), and No. 52388201 (J. S. Z.)), the National Key Research and Development Program of China (Grant No. 2022YFA1403302 (J. R. S.), No. 2024YFA1410200 (H. Z.), No. 2021YFA1400300 (B. G. S.), No. 2021YFB3501200 (F. X. H.), No. 2021YFB3501202 (F. X. H.), No. 2023YFA1406003 (F. X. H.), and No. 2024YFA1409100 (J. S. Z.)), the National Natural Science Foundation of China (Grant No. 12474103 (H. Z.), No. T2394470 (W. S. Z. and H. Z.), No. T2394474 (W. S. Z. and H. Z.), No. 12274443 (J. R. S.), No. 12350404 (J. S. Z.), No. 12274252 (J. S. Z.), No. 92263202 (F. X. H.), No. U23A20550 (F. X. H.), and No. 22361132534 (F. X. H.)), the Strategic Priority Research Program B of the Chinese Academy of Sciences (Grant No. XDB33030200 (B. G. S.)), the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302502 (J. S. Z.)), and the Beijing Outstanding Young Scientist Program (W. S. Z.).
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Affiliation(s)
- Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
| | - Yinan Xiao
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Qixuan Gao
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
| | - Ning Wu
- Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, China
- School of Nanoscience and Engineering, University of Chinese Academy of Sciences, Beijing, China
| | - Siyi Zhou
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
| | - Yongchao Wang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China
| | - Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Daming Tian
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Lu Chen
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Weijian Qi
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Dongyao Zheng
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Furong Han
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Huaiwen Yang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China
| | - Banggui Liu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang, China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physics, Zhejiang University, Hangzhou, Zhejiang, China.
| | - Weisheng Zhao
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing, China.
| | - Jinsong Zhang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, China.
- Frontier Science Center for Quantum Information, Beijing, China.
- Hefei National Laboratory, Hefei, Anhui, China.
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3
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Hu G, Wang C, Lu J, Zhu Y, Xi C, Ma X, Yang Y, Zhang Y, Wang S, Gu M, Zhang J, Lu Y, Cui P, Chen G, Zhu W, Xiang B, Zhang Z. Proximity-Induced Superconductivity in Ferromagnetic Fe 3GeTe 2 and Josephson Tunneling through a van der Waals Heterojunction. ACS NANO 2025; 19:5709-5717. [PMID: 39883401 DOI: 10.1021/acsnano.4c16050] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2025]
Abstract
Synergy between superconductivity and ferromagnetism may offer great opportunities in nondissipative spintronics and topological quantum computing. Yet at the microscopic level, the exchange splitting of the electronic states responsible for ferromagnetism is inherently incompatible with the spin-singlet nature of conventional superconducting Cooper pairs. Here, we exploit the recently discovered van der Waals ferromagnets as enabling platforms with marvelous controllability to unravel the myth between ferromagnetism and superconductivity. We report unambiguous experimental evidence of superconductivity in few-layer ferromagnetic Fe3GeTe2 (FGT) proximity coupled to a superconducting NbSe2 overlayer through an insulating spacer, demonstrating coexistence of these two seemingly antagonistic orderings. Our transport measurements reveal a sudden resistance drop to zero in FGT below the superconducting critical temperature of NbSe2 and detect a Josephson supercurrent through the NbSe2/insulator/FGT van der Waals junction. Furthermore, using anomalous Hall effect and magnetic force microscopy characterizations, we confirm that FGT preserves its ferromagnetism in the superconducting regime. Our central findings reveal the microscopic harmony between ferromagnetism and superconductivity and render these systems immense technological potentials.
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Affiliation(s)
- Guojing Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Beijing National Center for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, PR China
| | - Changlong Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Jingdi Lu
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Yuanmin Zhu
- School of Materials Science and Engineering, Dongguan University of Technology, Dongguan 523808, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Chuanying Xi
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Xiang Ma
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Yutong Yang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
| | - Ying Zhang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Shasha Wang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Meng Gu
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jinxing Zhang
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Yalin Lu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Ping Cui
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Guorui Chen
- Key Laboratory of Artificial Structures and Quantum Control, Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Wenguang Zhu
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Department of Physics, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Bin Xiang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, Anhui Laboratory of Advanced Photon Science and Technology, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
| | - Zhenyu Zhang
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, 230088, China
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4
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Zhou H, Wang Z, Wu J, Guo Y, Li T, She Y, Pan N, Xie Y, Wu C. Superconductor-Insulator Transition Induced by Precise Subtripled Vapor Chemical Gating. J Am Chem Soc 2025; 147:4675-4682. [PMID: 39854680 DOI: 10.1021/jacs.4c17794] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/26/2025]
Abstract
Recent progress in superconductor-insulator transition has shed light on the intermediate metallic state with unique electronic inhomogeneity. The microscopic model, suggesting that carrier spatial distribution plays a decisive role in the intermediate state, has been instrumental in understanding the quantum transition. However, the narrow carrier density window in which the intermediate state exists necessitates precise control of the gate dielectric layer, presenting a challenge to in situ map the carrier spatial distribution. Herein, a subtripled vapor chemical gating strategy has been proposed to precisely control carrier density and map spatial distribution in the LixZrNCl system. The chemical gating strategy utilizes subtripled vapor to quasi-continuously reduce the Li doping level, driving the ground-state transition from superconductor to quantum metal to quantum Griffiths singularity (QGS) to insulator. In situ optical mapping demonstrates an inhomogeneous electronic state in the intermediate metallic state and an evolution to a stripe-like pattern at 4 K, offering new insights into the nature of the intermediate metallic state.
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Affiliation(s)
- Haodong Zhou
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Ziren Wang
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Junchi Wu
- State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yuqiao Guo
- State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui 230031, P. R. China
| | - Taishen Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yongzhi She
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Nan Pan
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yi Xie
- State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui 230031, P. R. China
| | - Changzheng Wu
- State Key Laboratory of Precision and Intelligent Chemistry, CAS Key Laboratory of Mechanical Behavior and Design of Materials, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
- Institute of Energy, Hefei Comprehensive National Science Center, Hefei, Anhui 230031, P. R. China
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Chen L, Ma X, Liang Z, Wang Y, Liu F, Ma Y, Bao YH, Lin KQ, Li Q, Xu B, Wei XK. Inverse Size-Scaling Ferroelectricity in Centrosymmetric Insulating Perovskite Oxide DyScO 3. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2025; 37:e2413708. [PMID: 39641180 DOI: 10.1002/adma.202413708] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2024] [Revised: 11/26/2024] [Indexed: 12/07/2024]
Abstract
The breaking of inversion symmetry dictates the emergence of electric polarization, whose topological states in superlattices and bulks have received tremendous attention for their intriguing physics brought for novel device design. However, as for substrate oxides such as LaAlO3, KTaO3, RScO3 (R = rare earth element), their centrosymmetric trivial attributes make their functionality poorly explored. Here, the discovery of nanoscale thickness gradient-induced nonpolar-to-polar phase transition in band insulator DyScO3 is reported by using atomic resolution transmission electron microscopy. As the free-standing specimen reduces to a critical thickness ≈5 nm, its inversion symmetry is spontaneously broken by surface charge transfer, which gives rise to asymmetric Dy atomic displacements and ferrodistortive octahedral order, as substantiated by the first-principles calculations. Apart from the observation of migratable polar vortex structures, the switchable electric polarization by applied electric field is demonstrated by the piezoresponse force microscopy experiments. Given the decisive role of critical size in generating ferroelectricity, a concept of "inverse size-scaling ferroelectric" is proposed to define a class of such materials. Distinct from the proper and improper ferroelectrics, the findings offer a new platform to explore novel low-dimensional ferroelectrics and device applications in the future.
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Affiliation(s)
- Linyuan Chen
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Xue Ma
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Zhiyao Liang
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yi Wang
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Feng Liu
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Yunpeng Ma
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Yu-Han Bao
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Kai-Qiang Lin
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, China
| | - Qian Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Bin Xu
- Jiangsu Key Laboratory of Frontier Material Physics and Devices, School of Physical Science and Technology, Soochow University, Suzhou, 215006, China
| | - Xian-Kui Wei
- College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
- Innovation Laboratory for Sciences and Technologies of Energy Materials of Fujian Province (IKKEM), Xiamen, 361005, China
- Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Jülich, 52425, Jülich, Germany
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6
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Mao Z, Qiu D, Xu Z, Hao B, Zhang HY, Sun H, Pei X, Wang M, Li Y, Gu ZB, Zhu Y, Cheng G, Nie Y. A Two-Dimensional Superconducting Electron Gas at LaFeO 3/SrTiO 3 Interfaces. NANO LETTERS 2025; 25:586-592. [PMID: 39689220 DOI: 10.1021/acs.nanolett.4c05774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/19/2024]
Abstract
Transition metal oxide interfaces have garnered great attention due to their fascinating properties that are absent in their bulk counterparts. The high mobility and coexistence of superconductivity and magnetism at these interfaces remain compelling research topics. Here, we first report superconductivity in the 2DEG formed at the LaFeO3/SrTiO3 interfaces, characterized by a superconducting transition temperature (Tc) of 333 mK and a superconducting layer thickness of 13.7 nm. The observation of a Berezinskii-Kosterlitz-Thouless transition at low temperatures indicates the two-dimensional nature of the superconductivity. Such two-dimensional superconductivity can be tuned by applying a gate voltage (Vg) across the SrTiO3 substrate, showing a dome-shaped Tc-Vg dependence. Moreover, we observe a hysteretic behavior in the magnetoresistance in the superconducting regime, and the underlying mechanism requires further investigation. Our results unveil the superconducting characteristics of 2DEG at LaFeO3/SrTiO3 interfaces and offer a new compelling platform to investigate emergent quantum phenomena at oxide interfaces.
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Affiliation(s)
- Zhangwen Mao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Dawei Qiu
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230000, P. R. China
| | - Zhihang Xu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Hong-Yi Zhang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Xudong Pei
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Maosen Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Zheng-Bin Gu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
| | - Ye Zhu
- Department of Applied Physics, Research Institute for Smart Energy, The Hong Kong Polytechnic University, Kowloon 999077, Hong Kong, P. R. China
| | - Guanglei Cheng
- CAS Key Laboratory of Microscale Magnetic Resonance and School of Physical Sciences, University of Science and Technology of China, Hefei 230000, P. R. China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230000, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Nanjing University, Nanjing 210023, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210023, P. R. China
- Jiangsu Physical Science Research Center, Nanjing University, Nanjing 210023, P. R. China
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7
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Wang B, Ying G, Guo L, Lin Z, Liu H, Zeng C. Effectively tuning the quantum Griffiths phase by controllable quantum fluctuations. SCIENCE ADVANCES 2024; 10:eadp1402. [PMID: 39602548 PMCID: PMC11601250 DOI: 10.1126/sciadv.adp1402] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/09/2024] [Accepted: 10/25/2024] [Indexed: 11/29/2024]
Abstract
Quantum Griffiths phase (QGP), marked by a quantum Griffiths singularity with a divergent effective critical exponent, has garnered considerable attention in the realm of superconductivity. However, the ability to control QGP remains elusive. Here, we demonstrate that QGP at the LaAlO3/KTaO3(110) interface can be efficiently modulated by the orientation of applied magnetic field: With a perpendicular field, an anomalous QGP emerges in the low-temperature regime, characterized by a decreasing critical field as temperature lowers; conversely, with a parallel field, a normal QGP arises, where the critical field increases with decreasing temperature. Such opposite characteristics stem from the controllable quantum fluctuations and conductivity corrections under distinct magnetic field orientations. Furthermore, we show the effective tuning of the phase boundary by electrostatic gating, attributed to the gate-controlled quantum fluctuations. These findings not only demonstrate how to experimentally manipulate QGP but also provide a comprehensive understanding of how quantum fluctuations can effectively modulate QGP.
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Affiliation(s)
- Beilin Wang
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Guopei Ying
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Linhai Guo
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Zhiyong Lin
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
| | - Haiwen Liu
- Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing 100875, China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing Normal University, Beijing 100875, China
- Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, China
| | - Changgan Zeng
- CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei 230026, China
- International Center for Quantum Design of Functional Materials (ICQD), Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei 230088, China
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8
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Rahman MM, Oh S, Adhikari PR, Lee J. Complete Mapping of Thermodynamic Stability of Ternary Oxide SrTiO 3 (001) Surface at Finite Temperatures. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2405450. [PMID: 39236297 PMCID: PMC11538646 DOI: 10.1002/advs.202405450] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/18/2024] [Revised: 06/22/2024] [Indexed: 09/07/2024]
Abstract
The oxide surface structure plays a vital role in controlling and utilizing the emergent phenomena occurring at the interface of nanoarchitecture. A complete understanding of ternary oxide surfaces remains challenging due to complex surface reconstructions in various chemical and physical environments. Here a thermodynamic framework is developed to treat the stability of ternary oxide surfaces with finite temperature and chemical environments. Strontium titanate, as a representative ternary oxide, is used to establish the complete energy landscape of SrTiO3 (001) surface. The complete mapping yields a comprehensive understanding of various stable SrTiO3 surfaces with finite temperature and chemical potential or vapor pressure of the constituents, i.e., Sr (or Ti) metal and oxygen. This treatment also reveals a stable surface unknown yet with SrTi2O3 stoichiometry, which unveils the missing link between numerous previous experimental observations and the current understanding of SrTiO3 surface. Interestingly, the new surface shows an anisotropic surface-localized metallic state originating from the characteristic surface structure. The findings would provide a viable way to understand ternary oxide surfaces and further utilize SrTiO3 surfaces for oxide nanoarchitectures.
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Affiliation(s)
- Md Mokhlesur Rahman
- School of Advanced Materials Science & EngineeringSungkyunkwan UniversitySuwon‐siGyeonggi‐do16419South Korea
| | - Sehoon Oh
- School of Advanced Materials Science & EngineeringSungkyunkwan UniversitySuwon‐siGyeonggi‐do16419South Korea
| | - Puspa Raj Adhikari
- School of Advanced Materials Science & EngineeringSungkyunkwan UniversitySuwon‐siGyeonggi‐do16419South Korea
| | - Jaichan Lee
- School of Advanced Materials Science & EngineeringSungkyunkwan UniversitySuwon‐siGyeonggi‐do16419South Korea
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9
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Liu Y, Meng Q, Mahmoudi P, Wang Z, Zhang J, Yang J, Li W, Wang D, Li Z, Sorrell CC, Li S. Advancing Superconductivity with Interface Engineering. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2405009. [PMID: 39104281 DOI: 10.1002/adma.202405009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 07/01/2024] [Indexed: 08/07/2024]
Abstract
The development of superconducting materials has attracted significant attention not only for their improved performance, such as high transition temperature (TC), but also for the exploration of their underlying physical mechanisms. Recently, considerable efforts have been focused on interfaces of materials, a distinct category capable of inducing superconductivity at non-superconducting material interfaces or augmenting the TC at the interface between a superconducting material and a non-superconducting material. Here, two distinct types of interfaces along with their unique characteristics are reviewed: interfacial superconductivity and interface-enhanced superconductivity, with a focus on the crucial factors and potential mechanisms responsible for enhancing superconducting performance. A series of materials systems is discussed, encompassing both historical developments and recent progress from the perspectives of technical innovations and the exploration of new material classes. The overarching goal is to illuminate pathways toward achieving high TC, expanding the potential of superconducting parameters across interfaces, and propelling superconductivity research toward practical, high-temperature applications.
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Affiliation(s)
- Yichen Liu
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Qingxiao Meng
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Pezhman Mahmoudi
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ziyi Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Ji Zhang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Jack Yang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Wenxian Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Danyang Wang
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Zhi Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Charles C Sorrell
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
| | - Sean Li
- UNSW Materials and Manufacturing Futures Institute, School of Materials Science and Engineering, The University of New South Wales, Kensington, NSW, 2052, Australia
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10
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Men E, Li D, Zhang H, Chen J, Qiao Z, Wei L, Wang Z, Xi C, Song D, Li Y, Jeen H, Chen K, Zhu H, Hao L. An atomically controlled insulator-to-metal transition in iridate/manganite heterostructures. Nat Commun 2024; 15:8427. [PMID: 39341802 PMCID: PMC11439077 DOI: 10.1038/s41467-024-52616-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/19/2024] [Accepted: 09/12/2024] [Indexed: 10/01/2024] Open
Abstract
All-insulator heterostructures with an emerging metallicity are at the forefront of material science, which typically contain at least one band insulator while it is not necessary to be. Here we show emergent phenomena in a series of all-correlated-insulator heterostructures that composed of insulating CaIrO3 and insulating La0.67Sr0.33MnO3. We observed an intriguing insulator-to-metal transition, that depends delicately on the thickness of the iridate component. The simultaneous enhancements of magnetization, electric conductivity, and magnetoresistance effect indicate a percolation-type nature of the insulator-to-metal transition, with the percolation threshold can be reached at an exceptionally low volume fraction of the iridate. Such a drastic transition is induced by an interfacial charge transfer, which interestingly alters the electronic and crystalline structures of the bulk region rather than the limited ultrathin interface. We further showcased the central role of effective correlation in modulating the insulator-to-metal transition, by demonstrating that the critical thickness of iridate for triggering the metallic state can be systematically reduced down to a single unit-cell layer.
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Affiliation(s)
- Enyang Men
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Deyang Li
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Haiyang Zhang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Jingxin Chen
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Zhihan Qiao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Long Wei
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China
| | - Zhaosheng Wang
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Chuanying Xi
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China
| | - Dongsheng Song
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei, China
| | - Yuhan Li
- School of Physics and Astronomy, Beijing Normal University, Beijing, 100875, China
| | - Hyoungjeen Jeen
- Department of Physics, Pusan National University, Busan, South Korea
| | - Kai Chen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, China.
| | - Hong Zhu
- Department of Physics, University of Science and Technology of China, Hefei, China.
| | - Lin Hao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei, Anhui, China.
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11
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Chen X, Yu T, Liu Y, Sun Y, Lei M, Guo N, Fan Y, Sun X, Zhang M, Alarab F, Strocov VN, Wang Y, Zhou T, Liu X, Lu F, Liu W, Xie Y, Peng R, Xu H, Feng D. Orientation-dependent electronic structure in interfacial superconductors LaAlO 3/KTaO 3. Nat Commun 2024; 15:7704. [PMID: 39231978 PMCID: PMC11374786 DOI: 10.1038/s41467-024-51969-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Accepted: 08/21/2024] [Indexed: 09/06/2024] Open
Abstract
Emergent superconductivity at the LaAlO3/KTaO3 interfaces exhibits a mysterious dependence on the KTaO3 crystallographic orientations. Here by soft X-ray angle-resolved photoemission spectroscopy, we directly resolve the electronic structure of the LaAlO3/KTaO3 interfacial superconductors and the non-superconducting counterpart. We find that the mobile electrons that contribute to the interfacial superconductivity show strong k⊥ dispersion. Comparing the superconducting and non-superconducting interfaces, the quasi-three-dimensional electron gas with over 5.5 nm spatial distribution ubiquitously exists and shows similar orbital occupations. The signature of electron-phonon coupling is observed and intriguingly dependent on the interfacial orientations. Remarkably, the stronger electron-phonon coupling signature correlates with the higher superconducting transition temperature. Our observations help scrutinize the theories on the orientation-dependent superconductivity and offer a plausible and straightforward explanation. The interfacial orientation effect that can modify the electron-phonon coupling strength over several nanometers sheds light on the applications of oxide interfaces in general.
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Affiliation(s)
- Xiaoyang Chen
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Tianlun Yu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yuan Liu
- School of Physics, Zhejiang University, Hangzhou, China
| | - Yanqiu Sun
- School of Physics, Zhejiang University, Hangzhou, China
| | - Minyinan Lei
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Nan Guo
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yu Fan
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Xingtian Sun
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Meng Zhang
- School of Physics, Zhejiang University, Hangzhou, China
| | - Fatima Alarab
- Swiss Light Source, Paul Scherrer Institute, Villigen, Switzerland
| | | | - Yilin Wang
- School of Future Technology and Department of Physics, University of Science and Technology of China, Hefei, China
| | - Tao Zhou
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Xinyi Liu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Fanjin Lu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Weitao Liu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China
| | - Yanwu Xie
- School of Physics, Zhejiang University, Hangzhou, China.
| | - Rui Peng
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
| | - Haichao Xu
- Advanced Materials Laboratory, State Key Laboratory of Surface Physics, and Department of Physics, Fudan University, Shanghai, China.
- Shanghai Research Center for Quantum Sciences, Shanghai, China.
| | - Donglai Feng
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei, China.
- School of Emerging Technology and Department of Physics, University of Science and Technology of China, Hefei, China.
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12
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Zhou X, Shen Q, Wang Y, Dai Y, Chen Y, Wu K. Surface and interfacial sciences for future technologies. Natl Sci Rev 2024; 11:nwae272. [PMID: 39280082 PMCID: PMC11394106 DOI: 10.1093/nsr/nwae272] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/09/2024] [Revised: 07/15/2024] [Accepted: 08/01/2024] [Indexed: 09/18/2024] Open
Abstract
Physical science has undergone an evolutional transition in research focus from solid bulks to surfaces, culminating in numerous prominent achievements. Currently, it is experiencing a new exploratory phase-interfacial science. Many a technology with a tremendous impact is closely associated with a functional interface which delineates the boundary between disparate materials or phases, evokes complexities that surpass its pristine comprising surfaces, and thereby unveils a plethora of distinctive properties. Such an interface may generate completely new or significantly enhanced properties. These specific properties are closely related to the interfacial states formed at the interfaces. Therefore, establishing a quantitative relationship between the interfacial states and their functionalities has become a key scientific issue in interfacial science. However, interfacial science also faces several challenges such as invisibility in characterization, inaccuracy in calculation, and difficulty in precise construction. To tackle these challenges, people must develop new strategies for precise detection, accurate computation, and meticulous construction of functional interfaces. Such strategies are anticipated to provide a comprehensive toolbox tailored for future interfacial science explorations and thereby lay a solid scientific foundation for several key future technologies.
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Affiliation(s)
- Xiong Zhou
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Qian Shen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongfeng Wang
- School of Electronics, Peking University, Beijing 100871, China
| | - Yafei Dai
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Yongjun Chen
- Department of Interdisciplinary Sciences, National Natural Science Foundation of China, Beijing 100085, China
| | - Kai Wu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
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13
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Zhao Q, Shao TN, Yang WL, Wang XY, Chen XY, Chen MH, Zhu FH, Chen CX, Dou RF, Xiong CM, Liu H, Nie JC. Isotropic Quantum Griffiths Singularity in Nd_{0.8}Sr_{0.2}NiO_{2} Infinite-Layer Superconducting Thin Films. PHYSICAL REVIEW LETTERS 2024; 133:036003. [PMID: 39094159 DOI: 10.1103/physrevlett.133.036003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/17/2023] [Revised: 04/07/2024] [Accepted: 05/28/2024] [Indexed: 08/04/2024]
Abstract
This work reports on the emergence of quantum Griffiths singularity (QGS) associated with the magnetic field induced superconductor-metal transition (SMT) in unconventional Nd_{0.8}Sr_{0.2}NiO_{2} infinite layer superconducting thin films. The system manifests isotropic SMT features under both in-plane and perpendicular magnetic fields. Importantly, after scaling analysis of the isothermal magnetoresistance curves, the obtained effective dynamic critical exponents demonstrate divergent behavior when approaching the zero-temperature critical point B_{c}^{*}, identifying the QGS characteristics. Moreover, the quantum fluctuation associated with the QGS can quantitatively explain the upturn of the upper critical field around zero temperature for both the in-plane and perpendicular magnetic fields in the phase boundary of SMT. These properties indicate that the QGS in the Nd_{0.8}Sr_{0.2}NiO_{2} superconducting thin film is isotropic. Moreover, a higher magnetic field gives rise to a metallic state with the resistance-temperature relation R(T) exhibiting lnT dependence among the 2-10 K range and T^{2} dependence of resistance below 1.5 K, which is significant evidence of Kondo scattering. The interplay between isotropic QGS and Kondo scattering in the unconventional Nd_{0.8}Sr_{0.2}NiO_{2} superconductor can illustrate the important role of rare region in QGS and help to uncover the exotic superconductivity mechanism in this system.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | - Haiwen Liu
- School of Physics and Astronomy, Beijing Normal University, Beijing 100875, People's Republic of China
- Key Laboratory of Multiscale Spin Physics, Ministry of Education, Beijing Normal University, Beijing 100875, People's Republic of China
- Interdisciplinary Center for Theoretical Physics and Information Sciences, Fudan University, Shanghai 200433, People's Republic of China
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14
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Xu H, Li H, Gauquelin N, Chen X, Wu WF, Zhao Y, Si L, Tian D, Li L, Gan Y, Qi S, Li M, Hu F, Sun J, Jannis D, Yu P, Chen G, Zhong Z, Radovic M, Verbeeck J, Chen Y, Shen B. Giant Tunability of Rashba Splitting at Cation-Exchanged Polar Oxide Interfaces by Selective Orbital Hybridization. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313297. [PMID: 38475975 DOI: 10.1002/adma.202313297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/07/2023] [Revised: 03/07/2024] [Indexed: 03/14/2024]
Abstract
The 2D electron gas (2DEG) at oxide interfaces exhibits extraordinary properties, such as 2D superconductivity and ferromagnetism, coupled to strongly correlated electrons in narrow d-bands. In particular, 2DEGs in KTaO3 (KTO) with 5d t2g orbitals exhibit larger atomic spin-orbit coupling and crystal-facet-dependent superconductivity absent for 3d 2DEGs in SrTiO3 (STO). Herein, by tracing the interfacial chemistry, weak anti-localization magneto-transport behavior, and electronic structures of (001), (110), and (111) KTO 2DEGs, unambiguously cation exchange across KTO interfaces is discovered. Therefore, the origin of the 2DEGs at KTO-based interfaces is dramatically different from the electronic reconstruction observed at STO interfaces. More importantly, as the interface polarization grows with the higher order planes in the KTO case, the Rashba spin splitting becomes maximal for the superconducting (111) interfaces approximately twice that of the (001) interface. The larger Rashba spin splitting couples strongly to the asymmetric chiral texture of the orbital angular moment, and results mainly from the enhanced inter-orbital hopping of the t2g bands and more localized wave functions. This finding has profound implications for the search for topological superconductors, as well as the realization of efficient spin-charge interconversion for low-power spin-orbitronics based on (110) and (111) KTO interfaces.
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Affiliation(s)
- Hao Xu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hang Li
- Photon Science Division, Paul Scherrer Institute, Villigen, 5232, Switzerland
| | - Nicolas Gauquelin
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Xuejiao Chen
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Wen-Feng Wu
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei, 230031, P. R. China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yuchen Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Liang Si
- School of Physics, Northwest University, Xi'an, 710127, China
| | - Di Tian
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Lei Li
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering, Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, China
| | - Yulin Gan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shaojin Qi
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Minghang Li
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Fengxia Hu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jirong Sun
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Daen Jannis
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Pu Yu
- State Key Laboratory of Low Dimensional Quantum Physics and Department of Physics, Tsinghua University, Beijing, 100084, China
| | - Gang Chen
- Department of Physics and HKU-UCAS Joint Institute for Theoretical and Computational Physics at Hong Kong, The University of Hong Kong, Hong Kong, 999077, China
| | - Zhicheng Zhong
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
| | - Milan Radovic
- Photon Science Division, Paul Scherrer Institute, Villigen, 5232, Switzerland
| | - Johan Verbeeck
- Electron Microscopy for Materials Science (EMAT), University of Antwerp, 4Groenenborgerlaan 171, Antwerp, 2020, Belgium
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Baogen Shen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, China
- CAS Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, China
- Ganjiang Innovation Academy, Chinese Academy of Sciences, Ganzhou, Jiangxi, 341000, China
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15
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Maznichenko IV, Ostanin S, Maryenko D, Dugaev VK, Sherman EY, Buczek P, Mertig I, Kawasaki M, Ernst A. Emerging Two-Dimensional Conductivity at the Interface between Mott and Band Insulators. PHYSICAL REVIEW LETTERS 2024; 132:216201. [PMID: 38856292 DOI: 10.1103/physrevlett.132.216201] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Accepted: 04/23/2024] [Indexed: 06/11/2024]
Abstract
Intriguingly, conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here, we address the (001), (110), and (111) interfaces between the LaTiO_{3} Mott, and large band gap KTaO_{3} insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wideband insulators. Here, the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO_{3} and LaTiO_{3} which, due to a small gap in the LaTiO_{3} results in its sensitivity to the crystal structure, yields metallization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO_{3}/KTaO_{3} (110) where the "polar" arguments are not applicable and on the emergence of superconductivity in these structures.
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Affiliation(s)
- I V Maznichenko
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, Berliner Tor 7, D-20099 Hamburg, Germany
| | - S Ostanin
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
| | - D Maryenko
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
| | - V K Dugaev
- Department of Physics and Medical Engineering, Rzeszów University of Technology, 35-959 Rzeszów, Poland
| | - E Ya Sherman
- Department of Physical Chemistry and the EHU Quantum Center, University of the Basque Country UPV/EHU, Bilbao 48080, Spain
- Ikerbasque, Basque Foundation for Science, Bilbao, Spain
| | - P Buczek
- Department of Engineering and Computer Sciences, Hamburg University of Applied Sciences, Berliner Tor 7, D-20099 Hamburg, Germany
| | - I Mertig
- Institute of Physics, Martin Luther University Halle-Wittenberg, D-06099 Halle, Germany
| | - M Kawasaki
- RIKEN Center for Emergent Matter Science (CEMS), Wako 351-0198, Japan
- Department of Applied Physics and Quantum-Phase Electronics Center (QPEC), The University of Tokyo, Tokyo 113-8656, Japan
| | - A Ernst
- Institute for Theoretical Physics, Johannes Kepler University, A-4040 Linz, Austria
- Max Planck Institute for Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
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16
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Kim J, Yu M, Lee JW, Shang SL, Kim GY, Pal P, Seo J, Campbell N, Eom K, Ramachandran R, Rzchowski MS, Oh SH, Choi SY, Liu ZK, Levy J, Eom CB. Electronic-grade epitaxial (111) KTaO 3 heterostructures. SCIENCE ADVANCES 2024; 10:eadk4288. [PMID: 38787951 PMCID: PMC11122674 DOI: 10.1126/sciadv.adk4288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 04/22/2024] [Indexed: 05/26/2024]
Abstract
KTaO3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO3 and KTaO3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO3-based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.
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Affiliation(s)
- Jieun Kim
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Pratap Pal
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Jinsol Seo
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Neil Campbell
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Ranjani Ramachandran
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Mark S. Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Sang Ho Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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17
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Zhang X, Zhu T, Zhang S, Chen Z, Song A, Zhang C, Gao R, Niu W, Chen Y, Fei F, Tai Y, Li G, Ge B, Lou W, Shen J, Zhang H, Chang K, Song F, Zhang R, Wang X. Light-induced giant enhancement of nonreciprocal transport at KTaO 3-based interfaces. Nat Commun 2024; 15:2992. [PMID: 38582768 PMCID: PMC10998845 DOI: 10.1038/s41467-024-47231-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2023] [Accepted: 03/25/2024] [Indexed: 04/08/2024] Open
Abstract
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. However, it remains highly challenging to enhance the nonreciprocal transport for promising rectification devices. Here, we observe a light-induced giant enhancement of nonreciprocal transport at the superconducting and epitaxial CaZrO3/KTaO3 (111) interfaces. The nonreciprocal transport coefficient undergoes a giant increase with three orders of magnitude up to 105 A-1 T-1. Furthermore, a strong Rashba spin-orbit coupling effective field of 14.7 T is achieved with abundant high-mobility photocarriers under ultraviolet illumination, which accounts for the giant enhancement of nonreciprocal transport coefficient. Our first-principles calculations further disclose the stronger Rashba spin-orbit coupling strength and the longer relaxation time in the photocarrier excitation process, bridging the light-property quantitative relationship. Our work provides an alternative pathway to boost nonreciprocal transport in noncentrosymmetric systems and facilitates the promising applications in opto-rectification devices and spin-orbitronic devices.
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Affiliation(s)
- Xu Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Tongshuai Zhu
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
- College of Science, China University of Petroleum (East China), Qingdao, 266580, China
| | - Shuai Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Zhongqiang Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Anke Song
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Chong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Rongzheng Gao
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Wei Niu
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Yequan Chen
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China
| | - Fucong Fei
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Yilin Tai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Guoan Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei, 230601, China
| | - Wenkai Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Haijun Zhang
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China
| | - Kai Chang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, School of Physics, Nanjing University, Nanjing, 210093, China.
| | - Rong Zhang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
- Department of Physics, Xiamen University, Xiamen, 361005, China.
| | - Xuefeng Wang
- Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, State Key Laboratory of Spintronics Devices and Technologies, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
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18
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Zheng J, Shi W, Li Z, Zhang J, Yang CY, Zhu Z, Wang M, Zhang J, Han F, Zhang H, Chen Y, Hu F, Shen B, Chen Y, Sun J. Charge-Transfer-Induced Interfacial Ferromagnetism in Ferromagnet-Free Oxide Heterostructures. ACS NANO 2024; 18:9232-9241. [PMID: 38466082 DOI: 10.1021/acsnano.4c01910] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/12/2024]
Abstract
Due to the strong interlayer coupling between multiple degrees of freedom, oxide heterostructures have demonstrated exotic properties that are not shown by their bulk counterparts. One of the most interesting properties is ferromagnetism at the interface formed between "nonferromagnetic" compounds. Here we report on the interfacial ferromagnetic phase induced in the superlattices consisting of the two paramagnetic oxides CaRuO3 (CRO) and LaNiO3 (LNO). By varying the sublayer thickness in the superlattice period, we demonstrate that the ferromagnetic order has been established in both CaRuO3 and LaNiO3 sublayers, exhibiting an identical Curie temperature of ∼75 K. The X-ray absorption spectra suggest a strong charge transfer from Ru to Ni at the interface, triggering superexchange interactions between Ru/Ni ions and giving rise to the emergent ferromagnetic phase. Moreover, the X-ray linear dichroism spectra reveal the preferential occupancy of the d3z2-r2 orbital for the Ru ions and the dx2-y2 orbital for the Ni ions in the heterostructure. This leads to different magnetic anisotropy of the superlattices when they are dominated by CRO or LNO sublayers. This work clearly demonstrates a charge-transfer-induced interfacial ferromagnetic phase in the whole ferromagnet-free oxide heterostructures, offering a feasible way to tailor oxide materials for desired functionalities.
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Affiliation(s)
- Jie Zheng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Wenxiao Shi
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Zhe Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jing Zhang
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, People's Republic of China
| | - Chao-Yao Yang
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan
| | - Zhaozhao Zhu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Mengqin Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jine Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Furong Han
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Hui Zhang
- School of Integrated Circuit Science and Engineering, Beihang University, Beijing 100191, People's Republic of China
| | - Yunzhong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Fengxia Hu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Baogen Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo, Zhejiang 315201, People's Republic of China
| | - Yuansha Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Jirong Sun
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Spintronics Institute, School of Physics and Technology, University of Jinan, Jinan 250022, China
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19
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Wang Z, Liu Y, Ji C, Wang J. Quantum phase transitions in two-dimensional superconductors: a review on recent experimental progress. REPORTS ON PROGRESS IN PHYSICS. PHYSICAL SOCIETY (GREAT BRITAIN) 2023; 87:014502. [PMID: 38086096 DOI: 10.1088/1361-6633/ad14f3] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/30/2023] [Accepted: 12/12/2023] [Indexed: 12/30/2023]
Abstract
Superconductor-insulator/metal transition (SMT) as a paradigm of quantum phase transition has been a research highlight over the last three decades. Benefit from recent developments in the fabrication and measurements of two-dimensional (2D) superconducting films and nanodevices, unprecedented quantum phenomena have been revealed in the quantum phase transitions of 2D superconductors. In this review, we introduce the recent progress on quantum phase transitions in 2D superconductors, focusing on the quantum Griffiths singularity (QGS) and anomalous metal state. Characterized by a divergent critical exponent when approaching zero temperature, QGS of SMT is discovered in ultrathin crystalline Ga films and subsequently detected in various 2D superconductors. The universality of QGS indicates the profound influence of quenched disorder on quantum phase transitions. Besides, in a 2D superconducting system, whether a metallic ground state can exist is a long-sought mystery. Early experimental studies indicate an intermediate metallic state in the quantum phase transition of 2D superconductors. Recently, in high-temperature superconducting films with patterned nanopores, a robust anomalous metal state (i.e. quantum metal or Bose metal) has been detected, featured as the saturated resistance in the low temperature regime. Moreover, the charge-2equantum oscillations are observed in nanopatterned films, indicating the bosonic nature of the anomalous metal state and ending the debate on whether bosons can exist as a metal. The evidences of the anomalous metal states have also been reported in crystalline epitaxial thin films and exfoliated nanoflakes, as well as granular composite films. High quality filters are used in these works to exclude the influence of external high frequency noises in ultralow temperature measurements. The observations of QGS and metallic ground states in 2D superconductors not only reveal the prominent role of quantum fluctuations and dissipations but also provide new perspective to explore quantum phase transitions in superconducting systems.
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Affiliation(s)
- Ziqiao Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
| | - Yi Liu
- Department of Physics and Beijing Key Laboratory of Opto-electronic Functional Materials & Micro-nano Devices, Renmin University of China, Beijing 100872, People's Republic of China
- Key Laboratory of Quantum State Construction and Manipulation (Ministry of Education), Renmin University of China, Beijing 100872, People's Republic of China
| | - Chengcheng Ji
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
| | - Jian Wang
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, People's Republic of China
- Collaborative Innovation Center of Quantum Matter, Beijing 100871, People's Republic of China
- Hefei National Laboratory, Hefei 230088, People's Republic of China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing 100190, People's Republic of China
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20
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Zhai J, Trama M, Liu H, Zhu Z, Zhu Y, Perroni CA, Citro R, He P, Shen J. Large Nonlinear Transverse Conductivity and Berry Curvature in KTaO 3 Based Two-Dimensional Electron Gas. NANO LETTERS 2023; 23:11892-11898. [PMID: 38079285 DOI: 10.1021/acs.nanolett.3c03948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Two-dimensional electron gas (2DEG) at oxide interfaces exhibits various exotic properties stemming from interfacial inversion and symmetry breaking. In this work, we report large nonlinear transverse conductivities in the LaAlO3/KTaO3 interface 2DEG under zero magnetic field. Skew scattering was identified as the dominant origin based on the cubic scaling of nonlinear transverse conductivity with linear longitudinal conductivity and 3-fold symmetry. Moreover, gate-tunable nonlinear transport with pronounced peak and dip was observed and reproduced by our theoretical calculation. These results indicate the presence of Berry curvature hotspots and thus a large Berry curvature triplet at the oxide interface. Our theoretical calculations confirm the existence of large Berry curvatures from the avoided crossing of multiple 5d-orbit bands, orders of magnitude larger than that in transition-metal dichalcogenides. Nonlinear transport offers a new pathway to probe the Berry curvature at oxide interfaces and facilitates new applications in oxide nonlinear electronics.
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Affiliation(s)
- Jinfeng Zhai
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Mattia Trama
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
- Institute for Theoretical Solid State Physics, IFW Dresden, Helmholtzstr. 20, 01069 Dresden, Germany
| | - Hao Liu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhifei Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Yinyan Zhu
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Carmine Antonio Perroni
- Physics Department "Ettore Pancini", Universitá Degli Studi di Napoli "Federico II", Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- CNR-SPIN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
- INFN Napoli Unit, Complesso Univ. Monte S. Angelo, Via Cintia, I-80126 Napoli, Italy
| | - Roberta Citro
- Physics Department "E.R. Caianiello" and CNR-SPIN Salerno Unit, Universitá Degli Studi di Salerno, Via Giovanni Paolo II, 132, I-84084 Fisciano (Sa), Italy
- INFN─Gruppo Collegato di Salerno, I-84084 Fisciano, Italy
| | - Pan He
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
| | - Jian Shen
- State Key Laboratory of Surface Physics and Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
- Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China
- Department of Physics, Fudan University, Shanghai 200433, China
- Shanghai Research Center for Quantum Sciences, Shanghai 201315, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China
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21
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Hai Q, Chen H, Sun C, Chen D, Qi Y, Shi M, Zhao X. Green-Light GaN p-n Junction Luminescent Particles Enhance the Superconducting Properties of B(P)SCCO Smart Meta-Superconductors (SMSCs). NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:3029. [PMID: 38063726 PMCID: PMC10707958 DOI: 10.3390/nano13233029] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Subscribe] [Scholar Register] [Received: 11/02/2023] [Revised: 11/24/2023] [Accepted: 11/25/2023] [Indexed: 06/09/2025]
Abstract
Superconducting materials exhibit unique physical properties and have great scientific value and vast industrial application prospects. However, due to limitations, such as the critical temperature (TC) and critical current density (JC), the large-scale application of superconducting materials remains challenging. Chemical doping has been a commonly used method to enhance the superconductivity of B(P)SCCO. However, satisfactory enhancement results have been difficult to achieve. In this study, we introduce green-light GaN p-n junction particles as inhomogeneous phases into B(P)SCCO polycrystalline particles to form a smart meta-superconductor (SMSC) structure. Based on the electroluminescence properties of the p-n junction, the Cooper pairs were stimulated and strengthened to enhance the superconductivity of B(P)SCCO. The experimental results demonstrate that the introduction of inhomogeneous phases can indeed enhance the critical temperature TC, critical current density JC, and complete diamagnetism (Meissner effect) of B(P)SCCO superconductors. Moreover, when the particle size of the raw material of B(P)SCCO is reduced from 30 to 5 μm, the grain size of the sintered samples also decreases, and the optimal doping concentration of the inhomogeneous phases increases from 0.15 wt.% to 0.2 wt.%, further improving the superconductivity.
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Affiliation(s)
| | | | | | | | | | | | - Xiaopeng Zhao
- Smart Materials Laboratory, Department of Applied Physics, Northwestern Polytechnical University, Xi’an 710129, China; (Q.H.); (H.C.); (C.S.); (D.C.); (Y.Q.); (M.S.)
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22
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Shen JY, Shi CY, Pan ZM, Ju LL, Dong MD, Chen GF, Zhang YC, Yuan JK, Wu CJ, Xie YW, Wu J. Reentrance of interface superconductivity in a high-T c cuprate heterostructure. Nat Commun 2023; 14:7290. [PMID: 37949854 PMCID: PMC10638369 DOI: 10.1038/s41467-023-42903-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Accepted: 10/25/2023] [Indexed: 11/12/2023] Open
Abstract
Increasing the carrier density in a Mott insulator by chemical doping gives rise to a generic superconducting dome in high temperature superconductors. An intriguing question is whether a second superconducting dome may exist at higher dopings. Here we heavily overdope La2-xSrxCuO4 (0.45 ≤ x ≤ 1.0) and discover an unprecedented reentrance of interface superconductivity in La2-xSrxCuO4 /La2CuO4 heterostructures. As x increases, the superconductivity is weakened and completely fades away at x = 0.8; but it revives at higher doping and fully recovers at x = 1.0. This is shown to be correlated with the suppression of the interfacial charge transfer around x = 0.8 and the weak-to-strong localization crossover in the La2-xSrxCuO4 layer. We further construct a theoretical model to account for the sophisticated relation between charge localization and interfacial charge transfer. Our work advances both the search for and control of new superconducting heterostructures.
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Affiliation(s)
- J Y Shen
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - C Y Shi
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - Z M Pan
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
| | - L L Ju
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - M D Dong
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - G F Chen
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - Y C Zhang
- School of Physics, Zhejiang University, Hangzhou, 310027, China
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
| | - J K Yuan
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
| | - C J Wu
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China
- New Cornerstone Science Laboratory, Department of Physics, School of Science, Westlake University, 310024, Hangzhou, China
- Institute for Theoretical Sciences, Westlake University, Hangzhou, 310024, Zhejiang, China
- Institute of Natural Sciences, Westlake Institute for Advanced Study, Hangzhou, 310024, Zhejiang, China
| | - Y W Xie
- School of Physics, Zhejiang University, Hangzhou, 310027, China
| | - J Wu
- Research Center for Industries of the Future, Westlake University, Hangzhou, 310024, China.
- Department of Physics, School of Science, Westlake University, Hangzhou, 310024, China.
- Key Laboratory for Quantum Materials of Zhejiang Province, School of Science, Westlake University, Hangzhou, 310024, China.
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23
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Yang Z, Jin KJ, Gan Y, Ma C, Zhong Z, Yuan Y, Ge C, Guo EJ, Wang C, Xu X, He M, Zhang D, Yang G. Photoinduced Phase Transition in Infinite-Layer Nickelates. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2304146. [PMID: 37356048 DOI: 10.1002/smll.202304146] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/17/2023] [Revised: 06/15/2023] [Indexed: 06/27/2023]
Abstract
The quantum phase transition caused by regulating the electronic correlation in strongly correlated quantum materials has been a research hotspot in condensed matter science. Herein, a photon-induced quantum phase transition from the Kondo-Mott insulating state to the low temperature metallic one accompanying with the magnetoresistance changing from negative to positive in the infinite-layer NdNiO2 films is reported, where the antiferromagnetic coupling among the Ni1+ localized spins and the Kondo effect are effectively suppressed by manipulating the correlation of Ni-3d and Nd-5d electrons under the photoirradiation. Moreover, the critical temperature Tc of the superconducting-like transition exhibits a dome-shaped evolution with the maximum up to ≈42 K, and the electrons dominate the transport process proved by the Hall effect measurements. These findings not only make the photoinduction a promising way to control the quantum phase transition by manipulating the electronic correlation in Mott-like insulators, but also shed some light on the possibility of the superconducting in electron-doped nickelates.
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Affiliation(s)
- Zhen Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Kui-Juan Jin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Yulin Gan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Cheng Ma
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Ye Yuan
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Er-Jia Guo
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Xiulai Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Dongxiang Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Science, Beijing, 100049, China
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24
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Ao L, Huang J, Qin F, Li Z, Ideue T, Akhtari K, Chen P, Bi X, Qiu C, Huang D, Chen L, Belosludov RV, Gou H, Ren W, Nojima T, Iwasa Y, Bahramy MS, Yuan H. Valley-dimensionality locking of superconductivity in cubic phosphides. SCIENCE ADVANCES 2023; 9:eadf6758. [PMID: 37683003 PMCID: PMC10491139 DOI: 10.1126/sciadv.adf6758] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Accepted: 08/08/2023] [Indexed: 09/10/2023]
Abstract
Two-dimensional superconductivity is primarily realized in atomically thin layers through extreme exfoliation, epitaxial growth, or interfacial gating. Apart from their technical challenges, these approaches lack sufficient control over the Fermiology of superconducting systems. Here, we offer a Fermiology-engineering approach, allowing us to desirably tune the coherence length of Cooper pairs and the dimensionality of superconducting states in arsenic phosphides AsxP1-x under hydrostatic pressure. We demonstrate how this turns these compounds into tunable two-dimensional superconductors with a dome-shaped phase diagram even in the bulk limit. This peculiar behavior is shown to result from an unconventional valley-dimensionality locking mechanism, driven by a delicate competition between three-dimensional hole-type and two-dimensional electron-type energy pockets spatially separated in momentum space. The resulting dimensionality crossover is further discussed to be systematically controllable by pressure and stoichiometry tuning. Our findings pave a unique way to realize and control superconducting phases with special pairing and dimensional orders.
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Affiliation(s)
- Lingyi Ao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Junwei Huang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Feng Qin
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Zeya Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Toshiya Ideue
- Quantum-Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- Institute for Solid State Physics, The University of Tokyo, Chiba 277-8581, Japan
| | - Keivan Akhtari
- Department of Physics, University of Kurdistan, Sanandaj 416, Iran
| | - Peng Chen
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Xiangyu Bi
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Caiyu Qiu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
| | - Dajian Huang
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Long Chen
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | | | - Huiyang Gou
- Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
| | - Wencai Ren
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Tsutomu Nojima
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
| | - Yoshihiro Iwasa
- Quantum-Phase Electronic Center and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan
- RIKEN Center for Emergent Matter Science, Wako, Saitama 351-0198, Japan
| | - Mohammad Saeed Bahramy
- Department of Physics and Astronomy, School of Natural Sciences, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | - Hongtao Yuan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210000, China
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25
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Zhang L, Kang C, Liu C, Wang K, Zhang W. Two-dimensional superconducting nature of Bi 2Sr 2CaCu 2O 8+δ thin films revealed by BKT transition. RSC Adv 2023; 13:25797-25803. [PMID: 37664203 PMCID: PMC10468687 DOI: 10.1039/d3ra02701e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/24/2023] [Accepted: 07/15/2023] [Indexed: 09/05/2023] Open
Abstract
High-quality Bi2Sr2CaCu2O8+δ superconducting thin films are successfully grown on a SrTiO3 substrate by the Pulsed Laser Deposition technique. Superconducting critical transition temperatures Tc,zero have reached up to 85 K by using optimized growth parameters. In addition, we demonstrated the two-dimensional nature of the superconductivity of thin films by virtue of exhibiting Berezinskii-Kosterlitz-Thouless (BKT) physics and anisotropic magnetic response. Furthermore, three distinct regimes are identified based on the analysis of direct current resistance. The non-Fermi liquid phase and BKT phase fluctuation zone almost perfectly merge together, which implies that the system undergoes a unique topological state that is determined by the BKT phase fluctuation preceding the onset of the superconducting state. The emergence of such a topological state radically differentiates from the three-dimensional superconducting transition, which spontaneously breaks the gauge symmetry. The current studies on the Bi2Sr2CaCu2O8+δ superconducting thin films provide some new insights for understanding the rich quantum states of matter that emerge in the vicinity of the superconducting phase transition and highlight the significant role of BKT fluctuation on two-dimensional superconducting transition.
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Affiliation(s)
- Liping Zhang
- School of Future Technology, Henan University Zhengzhou 450046 China
| | - Chaoyang Kang
- School of Future Technology, Henan University Zhengzhou 450046 China
| | - Chengyan Liu
- School of Future Technology, Henan University Zhengzhou 450046 China
| | - Kai Wang
- Center for Topological Functional Materials, Henan University Kaifeng 475004 China
| | - Weifeng Zhang
- School of Future Technology, Henan University Zhengzhou 450046 China
- Institute of Quantum Materials and Physics, Henan Academy of Sciences Zhengzhou 450046 China
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26
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Tang F, Wang P, Wang Q, Gan Y, Lyu J, Mi X, He M, Zhang L, Smet JH. Ambipolar Superconductivity with Strong Pairing Interaction in Monolayer 1T'-MoTe 2. NANO LETTERS 2023; 23:7516-7523. [PMID: 37540083 PMCID: PMC10450800 DOI: 10.1021/acs.nanolett.3c02033] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Revised: 07/14/2023] [Indexed: 08/05/2023]
Abstract
Gate tunable two-dimensional (2D) superconductors offer significant advantages in studying superconducting phase transitions. Here, we address superconductivity in exfoliated 1T'-MoTe2 monolayers with an intrinsic band gap of ∼7.3 meV using field effect doping. Despite large differences in the dispersion of the conduction and valence bands, superconductivity can be achieved easily for both electrons and holes. The onset of superconductivity occurs near 7-8 K for both charge carrier types. This temperature is much higher than that in bulk samples. Also the in-plane upper critical field is strongly enhanced and exceeds the BCS Pauli limit in both cases. Gap information is extracted using point-contact spectroscopy. The gap ratio exceeds multiple times the value expected for BCS weak-coupling. All of these observations suggest a strong enhancement of the pairing interaction.
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Affiliation(s)
- Fangdong Tang
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Peipei Wang
- Department
of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qixing Wang
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
| | - Yuan Gan
- Department
of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jian Lyu
- Department
of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Xinrun Mi
- Low
Temperature Physics Laboratory, College of Physics & Center of
Quantum Materials and Devices, Chongqing
University, Chongqing 401331, China
| | - Mingquan He
- Low
Temperature Physics Laboratory, College of Physics & Center of
Quantum Materials and Devices, Chongqing
University, Chongqing 401331, China
| | - Liyuan Zhang
- Department
of Physics and Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jurgen H. Smet
- Max
Planck Institute for Solid State Research, Stuttgart 70569, Germany
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27
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Al-Tawhid AH, Poage SJ, Salmani-Rezaie S, Gonzalez A, Chikara S, Muller DA, Kumah DP, Gastiasoro MN, Lorenzana J, Ahadi K. Enhanced Critical Field of Superconductivity at an Oxide Interface. NANO LETTERS 2023; 23:6944-6950. [PMID: 37498750 DOI: 10.1021/acs.nanolett.3c01571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/29/2023]
Abstract
The nature of superconductivity and its interplay with strong spin-orbit coupling at the KTaO3(111) interfaces remain a subject of debate. To address this problem, we grew epitaxial LaMnO3/KTaO3(111) heterostructures. We show that superconductivity is robust against the in-plane magnetic field, with the critical field of superconductivity reaching ∼25 T in optimally doped heterostructures. The superconducting order parameter is highly sensitive to the carrier density. We argue that spin-orbit coupling drives the formation of anomalous quasiparticles with vanishing magnetic moment, providing significant condensate immunity against magnetic fields beyond the Pauli paramagnetic limit. These results offer design opportunities for superconductors with extreme resilience against the applied magnetic fields.
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Affiliation(s)
- Athby H Al-Tawhid
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Samuel J Poage
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Salva Salmani-Rezaie
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
| | - Antonio Gonzalez
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
| | - Shalinee Chikara
- National High Magnetic Field Laboratory, Tallahassee, Florida 32310, United States
| | - David A Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, United States
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, New York 14853, United States
| | - Divine P Kumah
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
| | - Maria N Gastiasoro
- Donostia International Physics Center, 20018 Donostia-San Sebastian, Spain
| | - José Lorenzana
- ISC-CNR and Department of Physics, Sapienza University of Rome, Piazzale Aldo Moro 2, 00185 Rome, Italy
| | - Kaveh Ahadi
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27265, United States
- Department of Physics, North Carolina State University, Raleigh, North Carolina 27695, United States
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28
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Guo Y, Qiu D, Shao M, Song J, Wang Y, Xu M, Yang C, Li P, Liu H, Xiong J. Modulations in Superconductors: Probes of Underlying Physics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209457. [PMID: 36504310 DOI: 10.1002/adma.202209457] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/13/2022] [Revised: 11/16/2022] [Indexed: 06/02/2023]
Abstract
The importance of modulations is elevated to an unprecedented level, due to the delicate conditions required to bring out exotic phenomena in quantum materials, such as topological materials, magnetic materials, and superconductors. Recently, state-of-the-art modulation techniques in material science, such as electric-double-layer transistor, piezoelectric-based strain apparatus, angle twisting, and nanofabrication, have been utilized in superconductors. They not only efficiently increase the tuning capability to the broader ranges but also extend the tuning dimensionality to unprecedented degrees of freedom, including quantum fluctuations of competing phases, electronic correlation, and phase coherence essential to global superconductivity. Here, for a comprehensive review, these techniques together with the established modulation methods, such as elemental substitution, annealing, and polarization-induced gating, are contextualized. Depending on the mechanism of each method, the modulations are categorized into stoichiometric manipulation, electrostatic gating, mechanical modulation, and geometrical design. Their recent advances are highlighted by applications in newly discovered superconductors, e.g., nickelates, Kagome metals, and magic-angle graphene. Overall, the review is to provide systematic modulations in emergent superconductors and serve as the coordinate for future investigations, which can stimulate researchers in superconductivity and other fields to perform various modulations toward a thorough understanding of quantum materials.
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Affiliation(s)
- Yehao Guo
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Dong Qiu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Mingxin Shao
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Jingyan Song
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Minyi Xu
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Chao Yang
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Peng Li
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
| | - Haiwen Liu
- Department of Physics, Beijing Normal University, Beijing, 100875, China
| | - Jie Xiong
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China
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29
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Zhang G, Wang L, Wang J, Li G, Huang G, Yang G, Xue H, Ning Z, Wu Y, Xu JP, Song Y, An Z, Zheng C, Shen J, Li J, Chen Y, Li W. Spontaneous rotational symmetry breaking in KTaO 3 heterointerface superconductors. Nat Commun 2023; 14:3046. [PMID: 37236987 DOI: 10.1038/s41467-023-38759-0] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/03/2022] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
Broken symmetries play a fundamental role in superconductivity and influence many of its properties in a profound way. Understanding these symmetry breaking states is essential to elucidate the various exotic quantum behaviors in non-trivial superconductors. Here, we report an experimental observation of spontaneous rotational symmetry breaking of superconductivity at the heterointerface of amorphous (a)-YAlO3/KTaO3(111) with a superconducting transition temperature of 1.86 K. Both the magnetoresistance and superconducting critical field in an in-plane field manifest striking twofold symmetric oscillations deep inside the superconducting state, whereas the anisotropy vanishes in the normal state, demonstrating that it is an intrinsic property of the superconducting phase. We attribute this behavior to the mixed-parity superconducting state, which is an admixture of s-wave and p-wave pairing components induced by strong spin-orbit coupling inherent to inversion symmetry breaking at the heterointerface of a-YAlO3/KTaO3. Our work suggests an unconventional nature of the underlying pairing interaction in the KTaO3 heterointerface superconductors, and brings a new broad of perspective on understanding non-trivial superconducting properties at the artificial heterointerfaces.
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Affiliation(s)
- Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Lijie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jinghui Wang
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Guoan Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Guangyi Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Guang Yang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Zhongfeng Ning
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Yueshen Wu
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China
| | - Jin-Peng Xu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yanru Song
- ShanghaiTech Quantum Device Lab, ShanghaiTech University, Shanghai, 201210, China.
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai, 200433, China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Jie Shen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
- Songshan Lake Materials Laboratory, Dongguan, 523808, China.
| | - Jun Li
- ShanghaiTech Laboratory for Topological Physics & School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, China.
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, 200433, China.
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30
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Gan Y, Yang F, Kong L, Chen X, Xu H, Zhao J, Li G, Zhao Y, Yan L, Zhong Z, Chen Y, Ding H. Light-Induced Giant Rashba Spin-Orbit Coupling at Superconducting KTaO 3 (110) Heterointerfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2300582. [PMID: 36972144 DOI: 10.1002/adma.202300582] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2023] [Revised: 03/07/2023] [Indexed: 05/16/2023]
Abstract
The 2D electron system (2DES) at the KTaO3 surface or heterointerface with 5d orbitals hosts extraordinary physical properties, including a stronger Rashba spin-orbit coupling (RSOC), higher superconducting transition temperature, and potential of topological superconductivity. Herein, a huge enhancement of RSOC under light illumination achieved at a superconducting amorphous-Hf0.5 Zr0.5 O2 /KTaO3 (110) heterointerfaces is reported. The superconducting transition is observed with Tc = 0.62 K and the temperature-dependent upper critical field reveals the interaction between spin-orbit scattering and superconductivity. A strong RSOC with Bso = 1.9 T is revealed by weak antilocalization in the normal state, which undergoes sevenfold enhancement under light illumination. Furthermore, RSOC strength develops a dome-shaped dependence of carrier density with the maximum of Bso = 12.6 T achieved near the Lifshitz transition point nc ≈ 4.1 × 1013 cm-2 . The highly tunable giant RSOC at KTaO3 (110)-based superconducting interfaces show great potential for spintronics.
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Affiliation(s)
- Yulin Gan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Fazhi Yang
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lingyuan Kong
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Xuejiao Chen
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Hao Xu
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Jin Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Gang Li
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Yuchen Zhao
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Lei Yan
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Zhicheng Zhong
- Key Laboratory of Magnetic Materials and Devices and Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering (NIMTE), Chinese Academy of Sciences, Ningbo, 315201, China
| | - Yunzhong Chen
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Hong Ding
- Beijing National Laboratory of Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Tsung-Dao Lee Institute & School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, 200240, China
- CAS Center for Excellence in Topological Quantum Computation, University of Chinese Academy of Sciences, Beijing, 100190, China
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31
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Tunable superconductivity and its origin at KTaO 3 interfaces. Nat Commun 2023; 14:951. [PMID: 36806127 PMCID: PMC9941122 DOI: 10.1038/s41467-023-36309-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 01/23/2023] [Indexed: 02/22/2023] Open
Abstract
What causes Cooper pairs to form in unconventional superconductors is often elusive because experimental signatures that connect to a specific pairing mechanism are rare. Here, we observe distinct dependences of the superconducting transition temperature Tc on carrier density n2D for electron gases formed at KTaO3 (111), (001) and (110) interfaces. For the (111) interface, a remarkable linear dependence of Tc on n2D is observed over a range of nearly one order of magnitude. Further, our study of the dependence of superconductivity on gate electric fields reveals the role of the interface in mediating superconductivity. We find that the extreme sensitivity of superconductivity to crystallographic orientation can be explained by pairing via inter-orbital interactions induced by an inversion-breaking transverse optical phonon and quantum confinement. This mechanism is also consistent with the dependence of Tc on n2D. Our study may shed light on the pairing mechanism in other superconducting quantum paraelectrics.
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32
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Arnault EG, Al-Tawhid AH, Salmani-Rezaie S, Muller DA, Kumah DP, Bahramy MS, Finkelstein G, Ahadi K. Anisotropic superconductivity at KTaO 3(111) interfaces. SCIENCE ADVANCES 2023; 9:eadf1414. [PMID: 36791191 PMCID: PMC9931206 DOI: 10.1126/sciadv.adf1414] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/01/2022] [Accepted: 01/17/2023] [Indexed: 06/18/2023]
Abstract
A two-dimensional, anisotropic superconductivity was recently found at the KTaO3(111) interfaces. The nature of the anisotropic superconducting transition remains a subject of debate. To investigate the origins of the observed behavior, we grew epitaxial KTaO3(111)-based heterostructures. We show that the superconductivity is robust against the in-plane magnetic field and violates the Pauli limit. We also show that the Cooper pairs are more resilient when the bias is along [11[Formula: see text]] (I ∥ [11[Formula: see text]]) and the magnetic field is along [1[Formula: see text]0] (B ∥ [1[Formula: see text]0]). We discuss the anisotropic nature of superconductivity in the context of electronic structure, orbital character, and spin texture at the KTaO3(111) interfaces. The results point to future opportunities to enhance superconducting transition temperatures and critical fields in crystalline, two-dimensional superconductors with strong spin-orbit coupling.
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Affiliation(s)
| | - Athby H. Al-Tawhid
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27265, USA
| | - Salva Salmani-Rezaie
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - David A. Muller
- School of Applied and Engineering Physics, Cornell University, Ithaca, NY 14853, USA
- Kavli Institute at Cornell for Nanoscale Science, Cornell University, Ithaca, NY 14853, USA
| | - Divine P. Kumah
- Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
| | - Mohammad S. Bahramy
- Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester M13 9PL, UK
| | | | - Kaveh Ahadi
- Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27265, USA
- Department of Physics, North Carolina State University, Raleigh, NC 27695, USA
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33
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Zheng G, Tan C, Chen Z, Wang M, Zhu X, Albarakati S, Algarni M, Partridge J, Farrar L, Zhou J, Ning W, Tian M, Fuhrer MS, Wang L. Electrically controlled superconductor-to-failed insulator transition and giant anomalous Hall effect in kagome metal CsV 3Sb 5 nanoflakes. Nat Commun 2023; 14:678. [PMID: 36755031 PMCID: PMC9908868 DOI: 10.1038/s41467-023-36208-6] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2022] [Accepted: 01/18/2023] [Indexed: 02/10/2023] Open
Abstract
The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A = K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that electrically controlled proton intercalation has significant impacts on striking quantum phenomena in CsV3Sb5 nanodevices mainly through inducing disorders in thinner nanoflakes and carrier density modulation in thicker ones. Specifically, in disordered thin nanoflakes (below 25 nm), we achieve a quantum phase transition from a superconductor to a "failed insulator" with a large saturated sheet resistance for T → 0 K. Meanwhile, the carrier density modulation in thicker nanoflakes shifts the Fermi level across the charge density wave (CDW) gap and gives rise to an extrinsic-intrinsic transition of AHE. With the first-principles calculations, the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities would account for the giant AHE. Our work uncovers a distinct disorder-driven bosonic superconductor-insulator transition (SIT), outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.
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Affiliation(s)
- Guolin Zheng
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China
| | - Cheng Tan
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia
- Department of Physics, and Lab of 2D Materials and Quantum Devices, School of Physics, Hefei University of Technology, Hefei, Anhui, 230009, China
| | - Zheng Chen
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China
| | - Maoyuan Wang
- Department of Physics, Xiamen University, Xiamen, Fujian, 361005, China
- International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China
| | - Xiangde Zhu
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China
| | - Sultan Albarakati
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | - Meri Algarni
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | - James Partridge
- School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | - Lawrence Farrar
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia
| | - Jianhui Zhou
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China.
| | - Wei Ning
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China.
| | - Mingliang Tian
- Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences (CAS), Hefei, 230031, Anhui, China.
- School of Physics and Optoelectronic Engineering, Anhui University, Hefei, 230601, Anhui, China.
| | - Michael S Fuhrer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Melbourne, VIC, 3800, Australia
| | - Lan Wang
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), School of Science, RMIT University, Melbourne, VIC, 3001, Australia.
- Department of Physics, and Lab of 2D Materials and Quantum Devices, School of Physics, Hefei University of Technology, Hefei, Anhui, 230009, China.
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34
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Heveling J. La-Doped Alumina, Lanthanum Aluminate, Lanthanum Hexaaluminate, and Related Compounds: A Review Covering Synthesis, Structure, and Practical Importance. Ind Eng Chem Res 2023. [DOI: 10.1021/acs.iecr.2c03007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/04/2023]
Affiliation(s)
- Josef Heveling
- Department of Chemistry, Tshwane University of Technology, Pretoria 0001, South Africa
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35
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Wang L, He W, Huang G, Xue H, Zhang G, Mu G, Wu S, An Z, Zheng C, Chen Y, Li W. Two-Dimensional Superconductivity at the Titanium Sesquioxide Heterointerface. ACS NANO 2022; 16:16150-16157. [PMID: 36121352 DOI: 10.1021/acsnano.2c04795] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The study of exotic superconductivity in two dimensions has been a central theme in the solid state and materials research communities. Experimentally exploring and identifying exotic, fascinating interface superconductors with a high transition temperature (Tc) are challenging. Here, we report an experimental observation of intriguing two-dimensional superconductivity with a Tc of up to 3.8 K at the interface between a Mott insulator Ti2O3 and polar semiconductor GaN. At the verge of superconductivity, we also observe a striking quantum metallic-like state, demonstrating that it is a precursor to the two-dimensional superconductivity as the temperature is decreased. Our work shows an exciting opportunity to exploit the underlying, emergent quantum phenomena at the heterointerfaces via heterostructure engineering.
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Affiliation(s)
- Lijie Wang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wenhao He
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guangyi Huang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Huanyi Xue
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Guanqun Zhang
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Gang Mu
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
| | - Shiwei Wu
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Zhenghua An
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
- Institute for Nanoelectronic Devices and Quantum Computing, Fudan University, Shanghai 200433, China
| | - Changlin Zheng
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Yan Chen
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
| | - Wei Li
- State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, China
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36
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Sun Y, Liu Y, Pan W, Xie Y. Effects of growth temperature, oxygen pressure, laser fluence and postannealing on transport properties of superconducting LaAlO 3/KTaO 3(111) interfaces. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:444004. [PMID: 36007513 DOI: 10.1088/1361-648x/ac8cc8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/02/2022] [Accepted: 08/25/2022] [Indexed: 06/15/2023]
Abstract
The recent discovery of superconductivity at EuO (or LaAlO3)/KTaO3interfaces has attracted considerable research interest. However, an extensive study on growth of these interfaces is still lacking. In this work, we have fabricated LaAlO3/KTaO3(111) interfaces by growing LaAlO3thin films on KTaO3(111) single-crystalline substrates by pulsed laser deposition. We investigated the effects of growth temperature, oxygen pressure, laser fluence, and postannealing on transport properties. We found that all these key growth parameters show important effects on transport properties, and discussed their possible mechanisms. Our present study provides useful knowledge to further optimize these interfaces.
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Affiliation(s)
- Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Wenze Pan
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, People's Republic of China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, People's Republic of China
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37
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Zheng D, Zhang J, He X, Wen Y, Li P, Wang Y, Ma Y, Bai H, Alshareef HN, Zhang XX. Electrically and optically erasable non-volatile two-dimensional electron gas memory. NANOSCALE 2022; 14:12339-12346. [PMID: 35971909 DOI: 10.1039/d2nr01582j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The high-mobility two-dimensional electron gas (2DEG) generated at the interface between two wide-band insulators, LaAlO3 (LAO) and SrTiO3 (STO), is an extensively researched topic. In this study, we have successfully realized reversible switching between metallic and insulating states of the 2DEG system via the application of optical illumination and positive pulse voltage induced by the introduction of oxygen vacancies as reservoirs for electrons. The positive pulse voltage irreversibly drives the electron to the defect energy level formed by the oxygen vacancies, which leads to the formation of the insulating state. Subsequently, the metallic state can be achieved via optical illumination, which excites the trapped electron back to the 2DEG potential well. The ON/OFF state is observed to be robust with a ratio exceeding 106; therefore, the interface can be used as an electrically and optically erasable non-volatile 2DEG memory.
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Affiliation(s)
- Dongxing Zheng
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Junwei Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- Key Laboratory of Magnetism and Magnetic Materials of Ministry of Education, School of Physical Science and Technology, Lanzhou University, Lanzhou, 730000, PR China
| | - Xin He
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Yan Wen
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Peng Li
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
- State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Yuchen Wang
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Yinchang Ma
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Haili Bai
- Tianjin Key Laboratory of Low Dimensional Materials Physics and Processing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, P. R. China
| | - Husam N Alshareef
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
| | - Xi-Xiang Zhang
- King Abdullah University of Science and Technology (KAUST), Physical Science and Engineering Division (PSE), Thuwal 23955-6900, Saudi Arabia.
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38
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Yu M, Liu C, Yang D, Yan X, Du Q, Fong DD, Bhattacharya A, Irvin P, Levy J. Nanoscale Control of the Metal-Insulator Transition at LaAlO 3/KTaO 3 Interfaces. NANO LETTERS 2022; 22:6062-6068. [PMID: 35862274 DOI: 10.1021/acs.nanolett.2c00673] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recent reports of superconductivity at KTaO3 (KTO) (110) and (111) interfaces have sparked intense interest due to the relatively high critical temperature as well as other properties that distinguish this system from the more extensively studied SrTiO3 (STO)-based heterostructures. Here, we report the reconfigurable creation of conducting structures at intrinsically insulating LaAlO3/KTO(110) and (111) interfaces. Devices are created using two distinct methods previously developed for STO-based heterostructures: (1) conductive atomic-force microscopy lithography and (2) ultralow-voltage electron-beam lithography. At low temperatures, KTO(110)-based devices show superconductivity that is tunable by an applied back gate. A one-dimensional nanowire device shows single-electron-transistor (SET) behavior. A KTO(111)-based device is metallic but does not become superconducting. These reconfigurable methods of creating nanoscale devices in KTO-based heterostructures offer new avenues for investigating mechanisms of superconductivity as well as development of quantum devices that incorporate strong spin-orbit interactions, superconducting behavior, and nanoscale dimensions.
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Affiliation(s)
- Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Changjiang Liu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Dengyu Yang
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Xi Yan
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Qianheng Du
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Dillon D Fong
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Anand Bhattacharya
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Patrick Irvin
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States
- Pittsburgh Quantum Institute, Pittsburgh, Pennsylvania 15260, United States
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39
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Mallik S, Ménard GC, Saïz G, Witt H, Lesueur J, Gloter A, Benfatto L, Bibes M, Bergeal N. Superfluid stiffness of a KTaO 3-based two-dimensional electron gas. Nat Commun 2022; 13:4625. [PMID: 35941153 PMCID: PMC9360446 DOI: 10.1038/s41467-022-32242-y] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/18/2022] [Accepted: 07/21/2022] [Indexed: 11/09/2022] Open
Abstract
After almost twenty years of intense work on the celebrated LaAlO3/SrTiO3system, the recent discovery of a superconducting two-dimensional electron gas (2-DEG) in (111)-oriented KTaO3-based heterostructures injects new momentum to the field of oxides interface. However, while both interfaces share common properties, experiments also suggest important differences between the two systems. Here, we report gate tunable superconductivity in 2-DEGs generated at the surface of a (111)-oriented KTaO3 crystal by the simple sputtering of a thin Al layer. We extract the superfluid stiffness of the 2-DEGs and show that its temperature dependence is consistent with a node-less superconducting order parameter having a gap value larger than expected within a simple BCS weak-coupling limit model. The superconducting transition follows the Berezinskii-Kosterlitz-Thouless scenario, which was not reported on SrTiO3-based interfaces. Our finding offers innovative perspectives for fundamental science but also for device applications in a variety of fields such as spin-orbitronics and topological electronics.
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Affiliation(s)
- S Mallik
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France
| | - G C Ménard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - G Saïz
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - H Witt
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France.,Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - J Lesueur
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France
| | - A Gloter
- Laboratoire de Physique des Solides, Université Paris-Saclay, CNRS UMR 8502, 91405, Orsay, France
| | - L Benfatto
- Department of Physics and ISC-CNR, Sapienza University of Rome, Rome, Italy
| | - M Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 Avenue Augustin Fresnel, 91767, Palaiseau, France
| | - N Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, PSL University, CNRS, Sorbonne Université, Paris, France.
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40
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Ren T, Li M, Sun X, Ju L, Liu Y, Hong S, Sun Y, Tao Q, Zhou Y, Xu ZA, Xie Y. Two-dimensional superconductivity at the surfaces of KTaO 3 gated with ionic liquid. SCIENCE ADVANCES 2022; 8:eabn4273. [PMID: 35658041 PMCID: PMC9166623 DOI: 10.1126/sciadv.abn4273] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/25/2021] [Accepted: 04/19/2022] [Indexed: 05/28/2023]
Abstract
The recent discovery of superconductivity at the interfaces between KTaO3 and EuO (or LaAlO3) gives birth to the second generation of oxide interface superconductors. This superconductivity exhibits a strong dependence on the surface plane of KTaO3, in contrast to the seminal LaAlO3/SrTiO3 interface, and the superconducting transition temperature Tc is enhanced by one order of magnitude. For understanding its nature, a crucial issue arises: Is the formation of oxide interfaces indispensable for the occurrence of superconductivity? Exploiting ionic liquid (IL) gating, we are successful in achieving superconductivity at KTaO3(111) and KTaO3(110) surfaces with Tc up to 2.0 and 1.0 K, respectively. This oxide-IL interface superconductivity provides a clear evidence that the essential physics of KTaO3 interface superconductivity lies in the KTaO3 surfaces doped with electrons. Moreover, the controllability with IL technique paves the way for studying the intrinsic superconductivity in KTaO3.
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Affiliation(s)
- Tianshuang Ren
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Miaocong Li
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Xikang Sun
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Lele Ju
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Siyuan Hong
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yanqiu Sun
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Qian Tao
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
| | - Yi Zhou
- Beijing National Laboratory for Condensed Matter
Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190,
China
- Songshan Lake Materials Laboratory, Dongguan,
Guangdong 523808, China
- Kavli Institute for Theoretical Sciences, CAS Center
for Excellence in Topological Quantum Computation, University of Chinese Academy
of Sciences, Beijing 100190, China
| | - Zhu-An Xu
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced
Microstructures, Nanjing University, Nanjing 210093, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information,
State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province
Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang
University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced
Microstructures, Nanjing University, Nanjing 210093, China
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41
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Gupta A, Silotia H, Kumari A, Dumen M, Goyal S, Tomar R, Wadehra N, Ayyub P, Chakraverty S. KTaO 3 -The New Kid on the Spintronics Block. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2106481. [PMID: 34961972 DOI: 10.1002/adma.202106481] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/18/2021] [Revised: 11/16/2021] [Indexed: 06/14/2023]
Abstract
Long after the heady days of high-temperature superconductivity, the oxides came back into the limelight in 2004 with the discovery of the 2D electron gas (2DEG) in SrTiO3 (STO) and several heterostructures based on it. Not only do these materials exhibit interesting physics, but they have also opened up new vistas in oxide electronics and spintronics. However, much of the attention has recently shifted to KTaO3 (KTO), a material with all the "good" properties of STO (simple cubic structure, high mobility, etc.) but with the additional advantage of a much larger spin-orbit coupling. In this state-of-the-art review of the fascinating world of KTO, it is attempted to cover the remarkable progress made, particularly in the last five years. Certain unsolved issues are also indicated, while suggesting future research directions as well as potential applications. The range of physical phenomena associated with the 2DEG trapped at the interfaces of KTO-based heterostructures include spin polarization, superconductivity, quantum oscillations in the magnetoresistance, spin-polarized electron transport, persistent photocurrent, Rashba effect, topological Hall effect, and inverse Edelstein Effect. It is aimed to discuss, on a single platform, the various fabrication techniques, the exciting physical properties and future application possibilities of this family of materials.
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Affiliation(s)
- Anshu Gupta
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Harsha Silotia
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Anamika Kumari
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Manish Dumen
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Saveena Goyal
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Ruchi Tomar
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Neha Wadehra
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
| | - Pushan Ayyub
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai, India
| | - Suvankar Chakraverty
- Quantum Materials and Devices Unit, Institute of Nano Science and Technology, Sector-81, Mohali, Punjab, 140306, India
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Vicente-Arche LM, Bréhin J, Varotto S, Cosset-Cheneau M, Mallik S, Salazar R, Noël P, Vaz DC, Trier F, Bhattacharya S, Sander A, Le Fèvre P, Bertran F, Saiz G, Ménard G, Bergeal N, Barthélémy A, Li H, Lin CC, Nikonov DE, Young IA, Rault JE, Vila L, Attané JP, Bibes M. Spin-Charge Interconversion in KTaO 3 2D Electron Gases. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102102. [PMID: 34499763 DOI: 10.1002/adma.202102102] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Revised: 07/13/2021] [Indexed: 06/13/2023]
Abstract
Oxide interfaces exhibit a broad range of physical effects stemming from broken inversion symmetry. In particular, they can display non-reciprocal phenomena when time reversal symmetry is also broken, e.g., by the application of a magnetic field. Examples include the direct and inverse Edelstein effects (DEE, IEE) that allow the interconversion between spin currents and charge currents. The DEE and IEE have been investigated in interfaces based on the perovskite SrTiO3 (STO), albeit in separate studies focusing on one or the other. The demonstration of these effects remains mostly elusive in other oxide interface systems despite their blossoming in the last decade. Here, the observation of both the DEE and IEE in a new interfacial two-dimensional electron gas (2DEG) based on the perovskite oxide KTaO3 is reported. 2DEGs are generated by the simple deposition of Al metal onto KTaO3 single crystals, characterized by angle-resolved photoemission spectroscopy and magnetotransport, and shown to display the DEE through unidirectional magnetoresistance and the IEE by spin-pumping experiments. Their spin-charge interconversion efficiency is then compared with that of STO-based interfaces, related to the 2DEG electronic structure, and perspectives are given for the implementation of KTaO3 2DEGs into spin-orbitronic devices is compared.
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Affiliation(s)
- Luis M Vicente-Arche
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Julien Bréhin
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Sara Varotto
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Maxen Cosset-Cheneau
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Srijani Mallik
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Raphaël Salazar
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Paul Noël
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Diogo C Vaz
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Felix Trier
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Suvam Bhattacharya
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Anke Sander
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Patrick Le Fèvre
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - François Bertran
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Guilhem Saiz
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Gerbold Ménard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Nicolas Bergeal
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI Paris, Université PSL, CNRS, Sorbonne Université, Paris, 75231, France
| | - Agnès Barthélémy
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
| | - Hai Li
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Chia-Ching Lin
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | | | - Ian A Young
- Components Research, Intel Corp., Hillsboro, OR, 97124, USA
| | - Julien E Rault
- Synchrotron SOLEIL, L'Orme des Merisiers, Saint-Aubin, BP 48, Gif-sur-Yvette Cedex, 91192, France
| | - Laurent Vila
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Jean-Philippe Attané
- Université Grenoble Alpes, CEA, CNRS, Grenoble INP, SPINTEC, Grenoble, 38000, France
| | - Manuel Bibes
- Unité Mixte de Physique, CNRS, Thales, Université Paris-Saclay, 1 avenue Augustin Fresnel, Palaiseau, 91767, France
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Dubnack O, Müller FA. Oxidic 2D Materials. MATERIALS 2021; 14:ma14185213. [PMID: 34576436 PMCID: PMC8469416 DOI: 10.3390/ma14185213] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/14/2021] [Revised: 09/07/2021] [Accepted: 09/08/2021] [Indexed: 11/18/2022]
Abstract
The possibility of producing stable thin films, only a few atomic layers thick, from a variety of materials beyond graphene has led to two-dimensional (2D) materials being studied intensively in recent years. By reducing the layer thickness and approaching the crystallographic monolayer limit, a variety of unexpected and technologically relevant property phenomena were observed, which also depend on the subsequent arrangement and possible combination of individual layers to form heterostructures. These properties can be specifically used for the development of multifunctional devices, meeting the requirements of the advancing miniaturization of modern manufacturing technologies and the associated need to stabilize physical states even below critical layer thicknesses of conventional materials in the fields of electronics, magnetism and energy conversion. Differences in the structure of potential two-dimensional materials result in decisive influences on possible growth methods and possibilities for subsequent transfer of the thin films. In this review, we focus on recent advances in the rapidly growing field of two-dimensional materials, highlighting those with oxidic crystal structure like perovskites, garnets and spinels. In addition to a selection of well-established growth techniques and approaches for thin film transfer, we evaluate in detail their application potential as free-standing monolayers, bilayers and multilayers in a wide range of advanced technological applications. Finally, we provide suggestions for future developments of this promising research field in consideration of current challenges regarding scalability and structural stability of ultra-thin films.
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Affiliation(s)
- Oliver Dubnack
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
| | - Frank A. Müller
- Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena, Germany;
- Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena, Germany
- Correspondence:
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44
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Sun Y, Liu Y, Hong S, Chen Z, Zhang M, Xie Y. Critical Thickness in Superconducting LaAlO_{3}/KTaO_{3}(111) Heterostructures. PHYSICAL REVIEW LETTERS 2021; 127:086804. [PMID: 34477422 DOI: 10.1103/physrevlett.127.086804] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2021] [Accepted: 07/29/2021] [Indexed: 06/13/2023]
Abstract
Recently, two-dimensional superconductivity was discovered at the oxide interface between KTaO_{3} and LaAlO_{3} (or EuO), whose superconducting transition temperature T_{c} is up to 2.2 K and exhibits strong crystalline-orientation dependence. However, the origin of the interfacial electron gas, which becomes superconducting at low temperatures, remains elusive. Taking the LaAlO_{3}/KTaO_{3}(111) interface as an example, we have demonstrated that there exists a critical LaAlO_{3} thickness of ∼3 nm. Namely, a thinner LaAlO_{3} film will give rise to an insulating but not conducting (or superconducting) interface. By in situ transport measurements during growth, we have also revealed that the critical thickness can be suppressed if exposure to oxygen is avoided. These observations, together with other control experiments, suggest strongly that the origination of the electron gas is dominated by the electron transfer that is from oxygen vacancies in the LaAlO_{3} film to the KTaO_{3} substrate.
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Affiliation(s)
- Yanqiu Sun
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yuan Liu
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Siyuan Hong
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Zheng Chen
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Meng Zhang
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
| | - Yanwu Xie
- Interdisciplinary Center for Quantum Information, State Key Laboratory of Modern Optical Instrumentation, and Zhejiang Province Key Laboratory of Quantum Technology and Device, Department of Physics, Zhejiang University, Hangzhou 310027, China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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