All topological bands of all nonmagnetic stoichiometric materials

Engineering Anomalously Large Electron Transport in Topological Semimetals

Anomalous transport of topological semimetals has generated significant interest for applications in optoelectronics, nanoscale devices, and interconnects. Understanding the origin of novel transport is crucial to engineering the desired material properties, yet their orders of magnitude higher transport than single-particle mobilities remain unexplained. This work demonstrates the dramatic mobility enhancements result from phonons primarily returning momentum to electrons due to phonon-electron dominating over phonon-phonon scattering. Proving this idea, proposed by Peierls in 1932, requires tuning electron and phonon dispersions without changing symmetry, topology, or disorder. This is achieved by combining de Haas - van Alphen (dHvA), electron transport, Raman scattering, and first-principles calculations in the topological semimetals MX2 (M = Nb, Ta and X = Ge, Si). Replacing Ge with Si brings the transport mobilities from an order magnitude larger than single particle ones to nearly balanced. This occurs without changing the crystal structure or topology and with small differences in disorder or Fermi surface. Simultaneously, Raman scattering and first-principles calculations establish phonon-electron dominated scattering only in the MGe2 compounds. Thus, this study proves that phonon-drag is crucial to the transport properties of topological semimetals and provides insight to engineer these materials further.

Machine learning interatomic potential: Bridge the gap between small-scale models and realistic device-scale simulations

Machine learning interatomic potential (MLIP) overcomes the challenges of high computational costs in density-functional theory and the relatively low accuracy in classical large-scale molecular dynamics, facilitating more efficient and precise simulations in materials research and design. In this review, the current state of the four essential stages of MLIP is discussed, including data generation methods, material structure descriptors, six unique machine learning algorithms, and available software. Furthermore, the applications of MLIP in various fields are investigated, notably in phase-change memory materials, structure searching, material properties predicting, and the pre-trained universal models. Eventually, the future perspectives, consisting of standard datasets, transferability, generalization, and trade-off between accuracy and complexity in MLIPs, are reported.

Enhanced weak superconductivity in trigonalγ-PtBi2

Electrical resistivity experiments show superconductivity atTc=1.1K in a high-quality single crystal of trigonalγ-PtBi2, with an enhanced critical magnetic fieldμ0Hc2(0)≳1.5Tesla and a low critical current-densityJc(0)≈40 A cm-2atH = 0. BothTcandHc2(0)are the highest reported values for stoichiometric bulk samples at ambient pressure. We found a weakHc2anisotropy withΓ=Hc2ab/Hc2c<1, which is unusual among superconductors. Under a magnetic field, the superconducting transition becomes broader and asymmetric. Along with the low critical currents, this observation suggests an inhomogeneous superconducting state. In fact, no trace of superconductivity is observed through field-cooling-zero-field-cooling magnetization experiments.

A hybrid topological quantum state in an elemental solid

Topology1-3 and interactions are foundational concepts in the modern understanding of quantum matter. Their nexus yields three important research directions: (1) the competition between distinct interactions, as in several intertwined phases, (2) the interplay between interactions and topology that drives the phenomena in twisted layered materials and topological magnets, and (3) the coalescence of several topological orders to generate distinct novel phases. The first two examples have grown into major areas of research, although the last example remains mostly unexplored, mainly because of the lack of a material platform for experimental studies. Here, using tunnelling microscopy, photoemission spectroscopy and a theoretical analysis, we unveil a 'hybrid' topological phase of matter in the simple elemental-solid arsenic. Through a unique bulk-surface-edge correspondence, we uncover that arsenic features a conjoined strong and higher-order topology that stabilizes a hybrid topological phase. Although momentum-space spectroscopy measurements show signs of topological surface states, real-space microscopy measurements unravel a unique geometry of topologically induced step-edge conduction channels revealed on various natural nanostructures on the surface. Using theoretical models, we show that the existence of gapless step-edge states in arsenic relies on the simultaneous presence of both a non-trivial strong Z2 invariant and a non-trivial higher-order topological invariant, which provide experimental evidence for hybrid topology. Our study highlights pathways for exploring the interplay of different band topologies and harnessing the associated topological conduction channels in engineered quantum or nano-devices.

Quantifying the photocurrent fluctuation in quantum materials by shot noise

The DC photocurrent can detect the topology and geometry of quantum materials without inversion symmetry. Herein, we propose that the DC shot noise (DSN), as the fluctuation of photocurrent operator, can also be a diagnostic of quantum materials. Particularly, we develop the quantum theory for DSNs in gapped systems and identify the shift and injection DSNs by dividing the second-order photocurrent operator into off-diagonal and diagonal contributions, respectively. Remarkably, we find that the DSNs can not be forbidden by inversion symmetry, while the constraint from time-reversal symmetry depends on the polarization of light. Furthermore, we show that the DSNs also encode the geometrical information of Bloch electrons, such as the Berry curvature and the quantum metric. Finally, guided by symmetry, we apply our theory to evaluate the DSNs in monolayer GeS and bilayer MoS2 with and without inversion symmetry and find that the DSNs can be larger in centrosymmetric phase.

The Case for a Defect Genome Initiative

The Materials Genome Initiative (MGI) has streamlined the materials discovery effort by leveraging generic traits of materials, with focus largely on perfect solids. Defects such as impurities and perturbations, however, drive many attractive functional properties of materials. The rich tapestry of charge, spin, and bonding states hosted by defects are not accessible to elements and perfect crystals, and defects can thus be viewed as another class of "elements" that lie beyond the periodic table. Accordingly, a Defect Genome Initiative (DGI) to accelerate functional defect discovery for energy, quantum information, and other applications is proposed. First, major advances made under the MGI are highlighted, followed by a delineation of pathways for accelerating the discovery and design of functional defects under the DGI. Near-term goals for the DGI are suggested. The construction of open defect platforms and design of data-driven functional defects, along with approaches for fabrication and characterization of defects, are discussed. The associated challenges and opportunities are considered and recent advances towards controlled introduction of functional defects at the atomic scale are reviewed. It is hoped this perspective will spur a community-wide interest in undertaking a DGI effort in recognition of the importance of defects in enabling unique functionalities in materials.

Strain-Induced Topological Phase Transitions Covering the Z4 Indicator in Orthorhombic Li2AuBi

The Z 4 symmetry indicator is widely used to classify topological materials hosting inversion symmetry. We find orthorhombic Li2AuBi in space group Cmcm is a topological insulator with Z 4 = 1 under no strain via first-principles calculations. Due to small band gaps in the kz = 0 plane, the band inversions can be selectively induced by moderate external strains to realize phases covering all values of Z 4 = 1, 2, 3, and 0. Detailed Z 4 phase diagrams are plotted under various moderate strains. The (001) surface states and their associated Fermi surfaces and spin textures are calculated. The topological surface states have different connectivities and different spin textures for the four different Z 4 phases. The tunability of topological surface states via moderate strain suggests Li2AuBi as an attractive topological material for device applications.

Two-dimensional quadratic Weyl points, nodal loops, and spin-orbit Dirac points in PtS, PtSe, and PtTe monolayers

Topological quasiparticles have garnered significant research attention in condensed matter physics. However, they are exceedingly rare in two-dimensional systems, particularly those hosting unconventional topological quasiparticles. In this work, employing first-principles calculations and symmetry analysis, we demonstrate that PtS, PtSe, and PtTe monolayers serve as high-quality two-dimensional topological semimetal materials. These materials exhibit multiple types of topological quasiparticles around the Fermi level in the absence of spin-orbit coupling, such as conventional linear Weyl points and unconventional quadratic Weyl points in the PtS monolayer, as well as nodal loops in PtSe and PtTe monolayers. When spin-orbit coupling (SOC) is introduced, a tiny gap opens, transforming the systems into quantum spin hall insulators. Simultaneously, three spin-orbit Dirac points, robust against SOC, appear at the X, Y, and M points. We illustrate the symmetry protection, low-energy effective model, and edge states of these topological states. Our work provides an excellent material platform for studying novel two-dimensional topological quasiparticles and topological insulators.

Spin-resolved topology and partial axion angles in three-dimensional insulators

Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- ([Formula: see text]-) invariant (helical) 3D TCIs-termed higher-order TCIs (HOTIs)-the boundary signatures can manifest as a sample-dependent network of 1D hinge states. We here introduce nested spin-resolved Wilson loops and layer constructions as tools to characterize the intrinsic bulk topological properties of spinful 3D insulators. We discover that helical HOTIs realize one of three spin-resolved phases with distinct responses that are quantitatively robust to large deformations of the bulk spin-orbital texture: 3D quantum spin Hall insulators (QSHIs), "spin-Weyl" semimetals, and [Formula: see text]-doubled axion insulator (T-DAXI) states with nontrivial partial axion angles indicative of a 3D spin-magnetoelectric bulk response and half-quantized 2D TI surface states originating from a partial parity anomaly. Using ab-initio calculations, we demonstrate that β-MoTe2 realizes a spin-Weyl state and that α-BiBr hosts both 3D QSHI and T-DAXI regimes.

Colossal magnetoresistance in the multiple wave vector charge density wave regime of an antiferromagnetic Dirac semimetal

Colossal negative magnetoresistance is a well-known phenomenon, notably observed in hole-doped ferromagnetic manganites. It remains a major research topic due to its potential in technological applications. In contrast, topological semimetals show large but positive magnetoresistance, originated from the high-mobility charge carriers. Here, we show that in the highly electron-doped region, the Dirac semimetal CeSbTe demonstrates similar properties as the manganites. CeSb0.11Te1.90 hosts multiple charge density wave modulation vectors and has a complex magnetic phase diagram. We confirm that this compound is an antiferromagnetic Dirac semimetal. Despite having a metallic Fermi surface, the electronic transport properties are semiconductor-like and deviate from known theoretical models. An external magnetic field induces a semiconductor metal-like transition, which results in a colossal negative magnetoresistance. Moreover, signatures of the coupling between the charge density wave and a spin modulation are observed in resistivity. This spin modulation also produces a giant anomalous Hall response.

Topological Superconductors from a Materials Perspective

Topological superconductors (TSCs) have garnered significant research and industry attention in the past two decades. By hosting Majorana bound states which can be used as qubits that are robust against local perturbations, TSCs offer a promising platform toward (nonuniversal) topological quantum computation. However, there has been a scarcity of TSC candidates, and the experimental signatures that identify a TSC are often elusive. In this Perspective, after a short review of the TSC basics and theories, we provide an overview of the TSC materials candidates, including natural compounds and synthetic material systems. We further introduce various experimental techniques to probe TSCs, focusing on how a system is identified as a TSC candidate and why a conclusive answer is often challenging to draw. We conclude by calling for new experimental signatures and stronger computational support to accelerate the search for new TSC candidates.

Vacancy-mediated anomalous phononic and electronic transport in defective half-Heusler ZrNiBi

Studies of vacancy-mediated anomalous transport properties have flourished in diverse fields since these properties endow solid materials with fascinating photoelectric, ferroelectric, and spin-electric behaviors. Although phononic and electronic transport underpin the physical origin of thermoelectrics, vacancy has only played a stereotyped role as a scattering center. Here we reveal the multifunctionality of vacancy in tailoring the transport properties of an emerging thermoelectric material, defective n-type ZrNiBi. The phonon kinetic process is mediated in both propagating velocity and relaxation time: vacancy-induced local soft bonds lower the phonon velocity while acoustic-optical phonon coupling, anisotropic vibrations, and point-defect scattering induced by vacancy shorten the relaxation time. Consequently, defective ZrNiBi exhibits the lowest lattice thermal conductivity among the half-Heusler family. In addition, a vacancy-induced flat band features prominently in its electronic band structure, which is not only desirable for electron-sufficient thermoelectric materials but also interesting for driving other novel physical phenomena. Finally, better thermoelectric performance is established in a ZrNiBi-based compound. Our findings not only demonstrate a promising thermoelectric material but also promote the fascinating vacancy-mediated anomalous transport properties for multidisciplinary explorations.

Spectral signatures of a unique charge density wave in Ta2NiSe7

Charge Density Waves (CDW) are commonly associated with the presence of near-Fermi level states which are separated from others, or "nested", by a wavector of q. Here we use Angle-Resolved Photo Emission Spectroscopy (ARPES) on the CDW material Ta2NiSe7 and identify a total absence of any plausible nesting of states at the primary CDW wavevector q. Nevertheless we observe spectral intensity on replicas of the hole-like valence bands, shifted by a wavevector of q, which appears with the CDW transition. In contrast, we find that there is a possible nesting at 2q, and associate the characters of these bands with the reported atomic modulations at 2q. Our comprehensive electronic structure perspective shows that the CDW-like transition of Ta2NiSe7 is unique, with the primary wavevector q being unrelated to any low-energy states, but suggests that the reported modulation at 2q, which would plausibly connect low-energy states, might be more important for the overall energetics of the problem.

Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties

Quantum chemical bonding descriptors have recently been utilized to design materials with tailored properties. Their usage to facilitate a quantitative description of bonding in chalcogenides as well as the transition between different bonding mechanisms is reviewed. More importantly, these descriptors can also be employed as property predictors for several important material characteristics, including optical and transport properties. Hence, these quantum chemical bonding descriptors can be utilized to tailor material properties of chalcogenides relevant for thermoelectrics, photovoltaics, and phase-change memories. Relating material properties to bonding mechanisms also shows that there is a class of materials, which are characterized by unconventional properties such as a pronounced anharmonicity, a large chemical bond polarizability, and strong optical absorption. This unusual property portfolio is attributed to a novel bonding mechanism, fundamentally different from ionic, metallic, and covalent bonding, which is called "metavalent." In the concluding section, a number of promising research directions are sketched, which explore the nature of the property changes upon changing bonding mechanism and extend the concept of quantum chemical property predictors to more complex compounds.

Multiple Magnetic Topological Phases in the van der Waals Crystal Mn(Bi,Sb)4Se7

Magnetic topological materials have drawn markedly attention recently due to the strong coupling of their novel topological properties and magnetic configurations. In particular, the MnBi₂Te₄/(Bi₂Te₃)_n family highlights the researches of multiple magnetic topological materials. Via first-principles calculations, we predict that Mn(Bi, Sb)₄Se₇, the close relatives of MnBi₂Te₄/(Bi₂Te₃)_n family, are topological nontrivival in both antiferromagnetic and ferromagnetic configurations. In the antiferromagnetic ground state, Mn(Bi, Sb)₄Se₇ are simultaneously topological insulators and axion insulators. Massless Dirac surface states emerge on the surfaces parallel to the z axis. In ferromagnetic phases, they are axion insulators. Particularly, when the magnetization direction is along the x axis, they are also topological crystalline insulators. Mirror-symmetry-protected gapless surface states exist on the mirror-invariant surfaces. Hence, the behaviors of surface states are strongly dependent on the magnetization directions and surface orientations. Our work provides more opportunities for the study of magnetic topological physics.

Bulk-surface coupling in dual topological insulator Bi1Te1and Sb-doped Bi1Te1single crystals via electron-phonon interaction

Recently,Bi1Te1has been proved to be a dual topological insulator (TI), a new subclass of symmetry-protected topological phases, and predicted to be higher order topological insulator (HOTI). Being a dual TI (DTI), Bi₁Te₁is said to host quasi-1D surface states (SSs) due to weak TI phase and topological crystalline insulating SSs at the same time. On the other hand, HOTI supports topologically protected hinge states. So,Bi1Te1is a unique platform to study the electrical signature of topological SS (TSS) of fundamentally different origins. Though there is a report of magneto-transport measurements on large-scale Bi₁Te₁thin films, the Bi₁Te₁single crystal is not studied experimentally to date. Even the doping effect in a DTI Bi₁Te₁is missing in the literature. In this regard, we performed the perpendicular and parallel field magneto-transport measurement on the exfoliated microflake of Bi₁Te₁and Sb-doped Bi₁Te₁single crystals, grown by the modified Bridgmann method. Ourmetallicsample shows the weak anti-localization behavior analyzed by the multi-channel Hikami-Larkin-Nagaoka equation. We observed the presence of a pair of decoupled TSS. Further, we extracted the dephasing index (β) from temperature (T)-dependence of phase coherence length (Lϕ), following the power law equation (Lϕ∝T-β). The thickness-dependent value ofβindicates the transition in the dephasing mechanism from electron-electron to electron-phonon interaction with the increase in thickness, indicating the enhancement in the strength of bulk-surface coupling. Sb-doped system shows weakened bulk-surface coupling, hinted by the reduced dephasing indices.

Top-down patterning of topological surface and edge states using a focused ion beam

The conducting boundary states of topological insulators appear at an interface where the characteristic invariant ℤ2 switches from 1 to 0. These states offer prospects for quantum electronics; however, a method is needed to spatially-control ℤ2 to pattern conducting channels. It is shown that modifying Sb2Te3 single-crystal surfaces with an ion beam switches the topological insulator into an amorphous state exhibiting negligible bulk and surface conductivity. This is attributed to a transition from ℤ2 = 1 → ℤ2 = 0 at a threshold disorder strength. This observation is supported by density functional theory and model Hamiltonian calculations. Here we show that this ion-beam treatment allows for inverse lithography to pattern arrays of topological surfaces, edges and corners which are the building blocks of topological electronics.

Topogivity: A Machine-Learned Chemical Rule for Discovering Topological Materials

Topological materials present unconventional electronic properties that make them attractive for both basic science and next-generation technological applications. The majority of currently known topological materials have been discovered using methods that involve symmetry-based analysis of the quantum wave function. Here we use machine learning to develop a simple-to-use heuristic chemical rule that diagnoses with a high accuracy whether a material is topological using only its chemical formula. This heuristic rule is based on a notion that we term topogivity, a machine-learned numerical value for each element that loosely captures its tendency to form topological materials. We next implement a high-throughput procedure for discovering topological materials based on the heuristic topogivity-rule prediction followed by ab initio validation. This way, we discover new topological materials that are not diagnosable using symmetry indicators, including several that may be promising for experimental observation.

Thermoelectric properties and lattice dynamics of tetragonal topological semimetal Ba3Si4

We report the lattice dynamics and thermoelectric properties of topological semimetal Ba₃Si₄. The lattice dynamics has been studied by Raman and inelastic neutron scattering experiments. Good agreement has been found with first-principles calculations. The presence of low-energy optical modes at about 7 meV mainly due to the heavy mass of the Ba atoms suggests a propensity to low thermal conductivity, which is favorable for thermoelectric applications. Our density functional theory calculations indicate that the semimetallic nature of Ba₃Si₄ is the origin for the rather large thermopower. Ba₃Si₄ shows high potential for a thermoelectric material with a Seebeck coefficient as large as -120 μV K^-1 for 0.2 electrons/formula units through the substitution of Ba by appropriate cations, such as Y.

Topological phase transitions without symmetry indication in NaZnSb[Formula: see text]Bi[Formula: see text]

We study topological phase transitions in tetragonal NaZnSb[Formula: see text]Bi[Formula: see text], driven by the chemical composition x. Notably, we examine mirror Chern numbers that change without symmetry indicators. First-principles calculations are performed to show that NaZnSb[Formula: see text]Bi[Formula: see text] experiences consecutive topological phase transitions, diagnosed by the strong [Formula: see text] topological index [Formula: see text] and two mirror Chern numbers [Formula: see text] and [Formula: see text]. As the chemical composition x increases, the topological invariants ([Formula: see text]) change from (000), (020), (220), to (111) at x = 0.15, 0.20, and 0.53, respectively. A simplified low-energy effective model is developed to examine the mirror Chern number changes, highlighting the central role of spectator Dirac fermions in avoiding symmetry indicators. Our findings suggest that NaZnSb[Formula: see text]Bi[Formula: see text] can be an exciting testbed for exploring the interplay between the topology and symmetry.

Hyperbolic Topological Band Insulators

Recently, hyperbolic lattices that tile the negatively curved hyperbolic plane emerged as a new paradigm of synthetic matter, and their energy levels were characterized by a band structure in a four- (or higher-) dimensional momentum space. To explore the uncharted topological aspects arising in hyperbolic band theory, we here introduce elementary models of hyperbolic topological band insulators: the hyperbolic Haldane model and the hyperbolic Kane-Mele model; both obtained by replacing the hexagonal cells of their Euclidean counterparts by octagons. Their nontrivial topology is revealed by computing topological invariants in both position and momentum space. The bulk-boundary correspondence is evidenced by comparing bulk and boundary density of states, by modeling propagation of edge excitations, and by their robustness against disorder.

Machine-Learning Spectral Indicators of Topology

Topological materials discovery has emerged as an important frontier in condensed matter physics. While theoretical classification frameworks have been used to identify thousands of candidate topological materials, experimental determination of materials' topology often poses significant technical challenges. X-ray absorption spectroscopy (XAS) is a widely used materials characterization technique sensitive to atoms' local symmetry and chemical bonding, which are intimately linked to band topology by the theory of topological quantum chemistry (TQC). Moreover, as a local structural probe, XAS is known to have high quantitative agreement between experiment and calculation, suggesting that insights from computational spectra can effectively inform experiments. In this work, computed X-ray absorption near-edge structure (XANES) spectra of more than 10 000 inorganic materials to train a neural network (NN) classifier that predicts topological class directly from XANES signatures, achieving F₁ scores of 89% and 93% for topological and trivial classes, respectively is leveraged. Given the simplicity of the XAS setup and its compatibility with multimodal sample environments, the proposed machine-learning-augmented XAS topological indicator has the potential to discover broader categories of topological materials, such as non-cleavable compounds and amorphous materials, and may further inform field-driven phenomena in situ, such as magnetic field-driven topological phase transitions.

The Influence of Carbides on Atomic-Scale Mechanical Properties of Carbon Steel: A Molecular Dynamics Study

Pearlite is an important structure in carbon steel; however, the influence mechanism of carbides in pearlite on its mechanical properties and microstructure evolution has not yet been fully elucidated. In this work, a ferrite-carbide composite model with various carbide types was constructed to investigate the influence of carbide types via a uniaxial compression deformation using classical molecular dynamics simulations. It was found that the carbide type had little effect on the compressive elastic modulus, but a more obvious effect on the yield strain, yield stress, and flow stress. The maximum compressive elastic modulus was in the Fe2C model, with 300.32 GPa, while the minimum was found in the Fe4C model at 285.16 GPa; the error was 5.32%. There were significant differences in the yield stress, yield strain, and flow stress of the ferrite-carbide model according to the stress-strain curve. Secondly, the type of carbide used affected its elastic constant, especially the bulk modulus and Cauchy pressure. The maximum bulk modulus of the Fe4C model was 199.01 GPa, the minimum value of the Fe3C model was 146.03 GPa, and the difference was 52.98 GPa. The Cauchy pressure calculation results were consistent with the yield strain trend. Additionally, the effective elastic moduli of the composite system were used to verify the accuracy of the calculation results of this work. Thirdly, ferrite-carbide interfaces could act as a resource for dislocation emission. The initial stacking fault forms at ferrite-carbide interfaces and expands into ferrite. The dislocation type and segment in the ferrite-carbide model were significantly different due to the type of carbide used.

Topological zero-dimensional defect and flux states in three-dimensional insulators

In insulating crystals, it was previously shown that defects with two fewer dimensions than the bulk can bind topological electronic states. We here further extend the classification of topological defect states by demonstrating that the corners of crystalline defects with integer Burgers vectors can bind 0D higher-order end (HEND) states with anomalous charge and spin. We demonstrate that HEND states are intrinsic topological consequences of the bulk electronic structure and introduce new bulk topological invariants that are predictive of HEND dislocation states in solid-state materials. We demonstrate the presence of first-order 0D defect states in PbTe monolayers and HEND states in 3D SnTe crystals. We relate our analysis to magnetic flux insertion in insulating crystals. We find that π-flux tubes in inversion- and time-reversal-symmetric (helical) higher-order topological insulators bind Kramers pairs of spin-charge-separated HEND states, which represent observable signatures of anomalous surface half quantum spin Hall states.

Structural Complexity and Tuned Thermoelectric Properties of a Polymorph of the Zintl Phase Ca2CdSb2 with a Non-centrosymmetric Monoclinic Structure

The Zintl phase Ca₂CdSb₂ was found to be dimorphic. Besides the orthorhombic Ca₂CdSb₂ (-o), here we report on the synthesis, the structural characterization, and the thermoelectric transport properties of its monoclinic form, Ca₂CdSb₂ (-m), and its Lu-doped variant Ca_2-xLu_xCdSb₂ (x ≈ 0.02). The monoclinic structure exhibits complex structural characteristics and constitutes a new structure type with the non-centrosymmetric space group Cm (Z = 30). The electrical resistivity ρ(T) measured on single crystals of both phases portrays a transition from a semiconductor to a degenerate p-type semiconductor upon doping with Lu and with an attendant change in the Hall carrier concentration n_H from 7.15 × 10¹⁸ to 2.30 × 10¹⁹ cm^-3 at 300 K. The Seebeck coefficient S(T) of both phases are comparable and indicate a hole-dominated carrier transport mechanism with magnitudes of 133 and 116 μV/K at 600 K for Ca₂CdSb₂ (-m) and Ca_2-xLu_xCdSb₂, respectively. The convoluted atomic bonding with an attendant large unit cell volume of ∼4365 ų drives a putative low thermal conductivity in these materials resulting in a power factor PF of 1.63 μW/cm K² and an estimated thermoelectric figure of merit zT of ∼0.5 for Ca_2-xLu_xCdSb₂ at 600 K. Differential scanning calorimetry results reveal the stability of these phases up to about 960 K, making them candidates for moderate temperature thermoelectric materials.