Correlation between Electrical Transport and Nanoscale Strain in InAs/In0.6Ga0.4As Core-Shell Nanowires

Effect of in-plane alignment on selective area grown homo-epitaxial nanowires

In-plane selective area growth (SAG) of III-V nanowires (NWs) has emerged as a scalable materials platform for quantum electronics and photonics applications. Most applications impose strict requirements on the material characteristics which makes optimization of the crystal quality vital. Alignment of in-plane SAG NWs with respect to the substrate symmetry is of importance due to the large substrate-NW interface as well as to obtain nanostructures with well-defined facets. Understanding the role of mis-orientation is thus important for designing devices and interpretation of electrical performance of devices. Here we study the effect of mis-orientation on morphology of selectively grown NWs oriented along the [1 1̅ 1̅] direction on GaAs(2 1 1)B. Atomic force microscopy is performed to extract facet roughness as a measure of structural quality. Further, we evaluate the dependence of material incorporation in NWs on the orientation and present the facet evolution in between two high symmetry in-plane orientations. By investigating the length dependence of NW morphology, we find that the morphology of ≈1μm long nominally aligned NWs remains unaffected by the unintentional misalignment associated with the processing and alignment of the sample under study. Finally, we show that using Sb as a surfactant during growth improves root-mean-square facet roughness for large misalignment but does not lower it for nominally aligned NWs.

Tunable Mechanics and Micromechanism in Close-Knit Silicide-in-SiO2 Core-Shell Nanowires

Bending/tension mechanics is one of the core issues for nanowires in flexible free-standing transport and sensor applications, but it remains a challenge to tailor the mechanical performance beyond the inherent properties. Herein, based on structure engineering, silicon-based Mn₅Si₃@SiO₂ nanocables are proposed and demonstrated as versatile nanosystems. Except for outstanding toughness, large ultimate strain, and great strength, they display diverse mechanical behaviors such as simplex elasticity, plasticity, and viscoelasticity under different external conditions. The tunable performances originate from synergetic effects between the core and shell components, like the atomic bonding transitional interface and space confinement, which induce optimizing internal stress distribution and the dislocation evolution mechanism in the core. The related mechanical performance is revealed carefully. The bending and tension dynamic picture, quantitative force curve, stress-strain dependence, and the corresponding lattice evolution are acquired by in/ex situ characterizations and measurements. These results contribute to nanowire mechanical design and also expand to strain-regulated three-dimensional multifunctional nanosystems.

Microscopic Understanding of the Growth and Structural Evolution of Narrow Bandgap III-V Nanostructures

III–V group nanomaterials with a narrow bandgap have been demonstrated to be promising building blocks in future electronic and optoelectronic devices. Thus, revealing the underlying structural evolutions under various external stimuli is quite necessary. To present a clear view about the structure–property relationship of III–V nanowires (NWs), this review mainly focuses on key procedures involved in the synthesis, fabrication, and application of III–V materials-based devices. We summarized the influence of synthesis methods on the nanostructures (NWs, nanodots and nanosheets) and presented the role of catalyst/droplet on their synthesis process through in situ techniques. To provide valuable guidance for device design, we further summarize the influence of structural parameters (phase, defects and orientation) on their electrical, optical, mechanical and electromechanical properties. Moreover, the dissolution and contact formation processes under heat, electric field and ionic water environments are further demonstrated at the atomic level for the evaluation of structural stability of III–V NWs. Finally, the promising applications of III–V materials in the energy-storage field are introduced.

Strain Engineering of Low-Dimensional Materials for Emerging Quantum Phenomena and Functionalities

Recent discoveries of exotic physical phenomena, such as unconventional superconductivity in magic-angle twisted bilayer graphene, dissipationless Dirac fermions in topological insulators, and quantum spin liquids, have triggered tremendous interest in quantum materials. The macroscopic revelation of quantum mechanical effects in quantum materials is associated with strong electron-electron correlations in the lattice, particularly where materials have reduced dimensionality. Owing to the strong correlations and confined geometry, altering atomic spacing and crystal symmetry via strain has emerged as an effective and versatile pathway for perturbing the subtle equilibrium of quantum states. This review highlights recent advances in strain-tunable quantum phenomena and functionalities, with particular focus on low-dimensional quantum materials. Experimental strategies for strain engineering are first discussed in terms of heterogeneity and elastic reconfigurability of strain distribution. The nontrivial quantum properties of several strain-quantum coupled platforms, including 2D van der Waals materials and heterostructures, topological insulators, superconducting oxides, and metal halide perovskites, are next outlined, with current challenges and future opportunities in quantum straintronics followed. Overall, strain engineering of quantum phenomena and functionalities is a rich field for fundamental research of many-body interactions and holds substantial promise for next-generation electronics capable of ultrafast, dissipationless, and secure information processing and communications.

Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain

III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.

Tuning Hole Mobility of Individual p-Doped GaAs Nanowires by Uniaxial Tensile Stress

Strain engineering provides an effective way of tailoring the electronic and optoelectronic properties of semiconductor nanomaterials and nanodevices, giving rise to novel functionalities. Here, we present direct experimental evidence of strain-induced modifications of hole mobility in individual gallium arsenide (GaAs) nanowires, using in situ transmission electron microscopy (TEM). The conductivity of the nanowires varied with applied uniaxial tensile stress, showing an initial decrease of ∼5-20% up to a stress of 1-2 GPa, subsequently increasing up to the elastic limit of the nanowires. This is attributed to a hole mobility variation due to changes in the valence band structure caused by stress and strain. The corresponding lattice strain in the nanowires was quantified by in situ four dimensional scanning TEM and showed a complex spatial distribution at all stress levels. Meanwhile, a significant red shift of the band gap induced by the stress and strain was unveiled by monochromated electron energy loss spectroscopy.

Unprecedented Piezoresistance Coefficient in Strained Silicon Carbide

Reports reveal that the piezoresistance coefficients of silicon carbide (SiC) nanowires (NWs) are 2 to 4 times smaller than those of their corresponding bulk counterparts. It is a challenge to eliminate contamination in adhering NWs onto substrates. In this study, a new setup was developed, in which NWs were manipulated and fixed by a goat hair and conductive silver epoxy in air, respectively, in the absence of any depositions. The goat hair was not consumed during manipulation of the NWs. The process took advantage of the stiffness and tapered tip of the goat hair, which is unlike the loss issue of beam sources in depositions. With the new fixing method, in situ transmission electron microscopy (TEM) electromechanical coupling measurements were performed on pristine SiC NWs. The piezoresistance coefficient and carrier mobility of SiC NW are -94.78 × 10^-11 Pa^-1 and 30.05 cm² V^-1 s^-1, respectively, which are 82 and 527 times respectively greater than those of SiC NWs reported previously. We, for the first time, report that the piezoresistance coefficient of SiC NW is 17 times those of its bulk counterparts. These findings provide new insights to develop high performance SiC devices and to help avoid catastrophic failure when working in harsh environments.

Piezoresistivity of InAsP Nanowires: Role of Crystal Phases and Phosphorus Atoms in Strain-Induced Channel Conductances

Strong piezoresistivity of InAsP nanowires is rationalized with atomistic simulations coupled to Density Functional Theory. With a focal interest in the case of the As(75%)-P(25%) alloy, the role of crystal phases and phosphorus atoms in strain-driven carrier conductance is discussed with a direct comparison to nanowires of a single crystal phase and a binary (InAs) alloy. Our analysis of electronic structures presents solid evidences that the strong electron conductance and its sensitivity to external tensile stress are due to the phosphorous atoms in a Wurtzite phase, and the effect of a Zincblende phase is not remarkable. With several solid connections to recent experimental studies, this work can serve as a sound framework for understanding of the unique piezoresistive characteristics of InAsP nanowires.

Control of Conductivity of InxGa1-xAs Nanowires by Applied Tension and Surface States

The electronic properties of semiconductor AIIIBV nanowires (NWs) due to their high surface/volume ratio can be effectively controlled by NW strain and surface electronic states. We study the effect of applied tension on the conductivity of wurtzite In_xGa_1-xAs (x ∼ 0.8) NWs. Experimentally, conductive atomic force microscopy is used to measure the I-V curves of vertically standing NWs covered by native oxide. To apply tension, the microscope probe touching the NW side is shifted laterally to produce a tensile strain in the NW. The NW strain significantly increases the forward current in the measured I-V curves. When the strain reaches 4%, the I-V curve becomes almost linear, and the forward current increases by 3 orders of magnitude. In the latter case, the tensile strain is supposed to shift the conduction band minima below the Fermi level, whose position, in turn, is fixed by surface states. Consequently, the surface conductivity channel appears. The observed effects confirm that the excess surface arsenic is responsible for the Fermi level pinning at oxidized surfaces of III-As NWs.

Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy

Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. Recent advancements in TEM instrumentation, in particular aberration correction and monochromation, have enabled pioneering experiments in complex nanostructure material systems. This review aims to address these understandings through the applications of the methodology for semiconductor nanostructures. It points out various electron microscopy techniques, in particular scanning TEM (STEM) imaging and spectroscopy techniques, with their already-employed or potential applications on 1D nanostructured semiconductors. We keep the main focus of the paper on the electronic and optoelectronic properties of such semiconductors, and avoid expanding it further. In the first part of the review, we give a brief introduction to each of the STEM-based techniques, without detailed elaboration, and mention the recent technological and conceptual developments which lead to novel characterization methodologies. For further reading, we refer the audience to a handful of papers in the literature. In the second part, we highlight the recent examples of application of the STEM methodology on the 1D nanostructure semiconductor materials, especially III-V, II-V, and group IV bare and heterostructure systems. The aim is to address the research questions on various physical properties and introduce solutions by choosing the appropriate technique that can answer the questions. Potential applications will also be discussed, the ones that have already been used for bulk and 2D materials, and have shown great potential and promise for 1D nanostructure semiconductors.