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Småbråten D, Nylund IE, Marshall K, Walker J, Benelmekki M, Einarsrud MA, Kioseoglou J, Selbach SM. Electronic Structure and Surface Chemistry of Hexagonal Boron Nitride on HOPG and Nickel Substrates. ACS Omega 2023; 8:24813-24830. [PMID: 37483195 PMCID: PMC10357548 DOI: 10.1021/acsomega.3c00562] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/27/2023] [Accepted: 06/21/2023] [Indexed: 07/25/2023]
Abstract
The effect of point defects and interactions with the substrate are shown by density functional theory calculations to be of significant importance for the structure and functional properties of hexagonal boron nitride (h-BN) films on highly ordered pyrolytic graphite (HOPG) and Ni(111) substrates. The structure, surface chemistry, and electronic properties are calculated for h-BN systems with selected intrinsic, oxygen, and carbon defects and with graphene hybrid structures. The electronic structure of a pristine monolayer of h-BN is dependent on the type of substrate, as h-BN is decoupled electronically from the HOPG surface and acts as bulk-like h-BN, whereas on a Ni(111) substrate, metallic-like behavior is predicted. These different film/substrate systems therefore show different reactivities and defect chemistries. The formation energies for substitutional defects are significantly lower than for intrinsic defects regardless of the substrate, and vacancies formed during film deposition are expected to be filled by either ambient oxygen or carbon from impurities. Significantly lower formation energies for intrinsic and oxygen and carbon substitutional defects were predicted for h-BN on Ni(111). In-plane h-BCN hybrid structures were predicted to be terminated by N-C bonding. Substitutional carbon on the boron site imposes n-type semiconductivity in h-BN, and the n-type character increases significantly for h-BN on HOPG. The h-BN film surface becomes electronically decoupled from the substrate when exceeding monolayer thickness, showing that the surface electronic properties and point defect chemistry for multilayer h-BN films should be comparable to those of a freestanding h-BN layer.
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Affiliation(s)
- Didrik
René Småbråten
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
- Department
of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Inger-Emma Nylund
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Kenneth Marshall
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Julian Walker
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Maria Benelmekki
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Mari-Ann Einarsrud
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
| | - Joseph Kioseoglou
- Department
of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece
| | - Sverre M. Selbach
- Department
of Materials Science and Engineering, NTNU
Norwegian University of Science and Technology, NO-7491 Trondheim, Norway
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Jiménez GC, Morinson-Negrete JD, Blanquicett FP, Ortega-López C, Espitia-Rico MJ. Effects of Mono-Vacancies and Co-Vacancies of Nitrogen and Boron on the Energetics and Electronic Properties of Heterobilayer h-BN/graphene. Materials (Basel) 2022; 15:6369. [PMID: 36143681 PMCID: PMC9505817 DOI: 10.3390/ma15186369] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/09/2022] [Revised: 08/30/2022] [Accepted: 09/05/2022] [Indexed: 06/16/2023]
Abstract
A study is carried out which investigates the effects of the mono-vacancies of boron (VB) and nitrogen (VN) and the co-vacancies of nitrogen (N), and boron (B) on the energetics and the structural, electronic, and magnetic properties of an h-BN/graphene heterobilayer using first-principles calculations within the framework of the density functional theory (DFT). The heterobilayer is modelled using the periodic slab scheme. In the present case, a 4 × 4-(h-BN) monolayer is coupled to a 4 × 4-graphene monolayer, with a mismatch of 1.40%. In this coupling, the surface of interest is the 4 × 4-(h-BN) monolayer; the 4 × 4-graphene only represents the substrate that supports the 4 × 4-(h-BN) monolayer. From the calculations of the energy of formation of the 4 × 4-(h-BN)/4 × 4-graphene heterobilayer, with and without defects, it is established that, in both cases, the heterobilayers are energetically stable, from which it is inferred that these heterobilayers can be grown in the experiment. The formation of a mono-vacancy of boron (1 VB), a mono-vacancy of nitrogen (1 VN), and co-vacancies of boron and nitrogen (VBN) induce, on the structural level: (a) for 1 VB, a contraction n of the B-N bond lengths of ~2.46% and a slight change in the interfacial distance D (~0.096%) with respect to the heterobilayer free of defects (FD) are observed; (b) for 1 VN, a slight contraction of the B-N of bond lengths of ~0.67% and an approach between the h-BN monolayer and the graphene of ~3.83% with respect to the FD heterobilayer are observed; (c) for VBN, it can be seen that the N-N and B-B bond lengths (in the 1 VB and 1 VN regions, respectively) undergo an increase of ~2.00% and a decrease of ~3.83%, respectively. The calculations of the Löwdin charge for the FD heterobilayer and for those with defects (1 VB, 1 VN, and VBN) show that the inclusion of this type of defect induces significant changes in the Löwdin charge redistribution of the neighboring atoms of VB and VN, causing chemically active regions that could favor the interaction of the heterobilayer with external atoms and/or molecules. On the basis of an analysis of the densities of states and the band structures, it is established that the heterobilayer with 1 VB and VBN take on a half-metallic and magnetic behavior. Due to all of these properties, the FD heterobilayer and those with 1 VB, 1 VN, and VBN are candidates for possible adsorbent materials and possible materials that could be used for different spintronic applications.
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Affiliation(s)
- Gladys Casiano Jiménez
- Grupo Avanzado de Materiales y Sistemas Complejos GAMASCO, Universidad de Córdoba, Montería CP 230001, Colombia
- Doctorado en Ciencias Física, Universidad de Córdoba, Montería CP 2030001, Colombia
| | - Juan David Morinson-Negrete
- Grupo Avanzado de Materiales y Sistemas Complejos GAMASCO, Universidad de Córdoba, Montería CP 230001, Colombia
- Grupo de Investigación AMDAC, Institución Educativa José María Córdoba, Montería CP 2300001, Colombia
| | | | - César Ortega-López
- Grupo Avanzado de Materiales y Sistemas Complejos GAMASCO, Universidad de Córdoba, Montería CP 230001, Colombia
- Doctorado en Ciencias Física, Universidad de Córdoba, Montería CP 2030001, Colombia
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Han N, Xie W, Zhang J, Liu L, Zhao J, West D, Zhang S. Remote Passivation in Two-Dimensional Materials: The Case of the Monolayer-Bilayer Lateral Junction of MoSe 2. J Phys Chem Lett 2021; 12:8046-8052. [PMID: 34433273 DOI: 10.1021/acs.jpclett.1c02457] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) monolayer-bilayer (ML-BL) lateral junctions (LJs) have recently attracted attention due to their straightforward synthesis and resulting clean interface. Such systems consist of an extended ML with a secondary layer present only over half of the system, leading to an interface that is associated with the terminating edge of the secondary half layer. Our first-principles calculations reveal that the edges of the half layer completely lack reconstruction in the presence of unintentional dopants, in this case, Re. This observation is in startling contrast to the known physics of three-dimensional (3D) semiconductor surfaces where reconstruction has been widely observed. Herein, the electrostatics of the reduced dimensionality allows for greater separation between compensating defects, enabling dopants to remotely passivate edge states without needing to directly participate in the chemistry.
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Affiliation(s)
- Nannan Han
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, Xi'an 710072, China
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy 12180, United States
| | - Weiyu Xie
- China Academy of Engineering Physics Institute of Chemical Materials, Mianyang 621999, China
| | - Junfeng Zhang
- School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
| | - Lizhao Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024, China
| | - Damien West
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy 12180, United States
| | - Shengbai Zhang
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy 12180, United States
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Han Z, Li M, Li L, Jiao F, Wei Z, Geng D, Hu W. When graphene meets white graphene - recent advances in the construction of graphene and h-BN heterostructures. Nanoscale 2021; 13:13174-13194. [PMID: 34477725 DOI: 10.1039/d1nr03733a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
2D heterostructures have very recently witnessed a boom in scientific and technological activities owing to the customized spatial orientation and tailored physical properties. A large amount of 2D heterostructures have been constructed on the basis of the combination of mechanical exfoliation and located transfer method, opening wide possibilities for designing novel hybrid systems with tuned structures, properties, and applications. Among the as-developed 2D heterostructures, in-plane graphene and h-BN heterostructures have drawn the most attention in the past few decades. The controllable synthesis, the investigation of properties, and the expansion of applications have been widely explored. Herein, the fabrication of graphene and h-BN heterostructures is mainly focused on. Then, the spatial configurations for the heterostructures are systematically probed to identify the highly related unique features. Moreover, as a most promising approach for the scaled production of 2D materials, the in situ CVD fabrication of the heterostructures is summarized, demonstrating a significant potential in the controllability of size, morphology, and quality. Further, the recent applications of the 2D heterostructures are discussed. Finally, the concerns and challenges are fully elucidated and a bright future has been envisioned.
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Affiliation(s)
- Ziyi Han
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering, Tianjin, 300072 P. R. China.
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5
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Abstract
Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.
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Affiliation(s)
- Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Robert M Jacobberger
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Michael S Arnold
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
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6
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Huang J, Wang Q, Liu P, Chen GH, Yang Y. Tuning adlayer-substrate interactions of graphene/h-BN heterostructures on Cu(111)-Ni and Ni(111)-Cu surface alloys. RSC Adv 2021; 11:1916-1927. [PMID: 35424168 PMCID: PMC8693814 DOI: 10.1039/d0ra08622c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/09/2020] [Accepted: 11/23/2020] [Indexed: 11/21/2022] Open
Abstract
The evolution of the interface and interaction of h-BN and graphene/h-BN (Gr/h-BN) on Cu(111)-Ni and Ni(111)-Cu surface alloys versus the Ni/Cu atomic percentage on the alloy surface were comparatively studied by the DFT-D2 method, including the critical long-range van der Waals forces. Our results showed that the interaction strength and interface distance of Gr/h-BN/metal can be distinctly tuned by regulating the chemical composition of the surface alloy at the interface. The initially weak interaction of h-BN/Cu(111)-Ni increased linearly with increasing Ni atomic percentage, and the interface distances decreased from ∼3.10 to ∼2.10 Å. For the h-BN/Ni(111)-Cu interface, the strong interaction of the NtopBfcc/hcp stacking decreased sharply with increasing Cu atomic percentage from 0% to 50%, and the interface distances increased from ∼2.15 to ∼3.00 Å; meanwhile, the weak interaction of the BtopNfcc/hcp stacking decreased slightly with increasing Cu atomic percentage. The absorption of graphene on h-BN/Cu(111)-Ni with BtopNhollow/NtopBfcc and BtopNhollow/BtopNfcc stacking was more energetically favorable than that with NtopBhollow/NtopBfcc and NtopBhollow/BtopNfcc at Ni atomic percentages under 75%, while the interaction energy of graphene on h-BN/Cu(111)-Ni increased sharply at Ni atomic percentages higher than 75% for the BtopNhollow/NtopBfcc and NtopBhollow/NtopBfcc stacking. In contrast, the interaction between graphene and the h-BN/Ni(111)-Cu surface increased sharply at Cu atomic percentages lower than 25% and decreased sharply at Cu atomic percentages higher than 75%. The interaction energies were higher when the percentage of Cu atom was between 25% and 75%. The analysis of charge transfer and density of states provided further details on the changing character and evolution trends of the interactions among graphene, h-BN, and Cu-Ni surface alloy versus the Ni/Cu atomic percentage.
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Affiliation(s)
- Jianmei Huang
- School of Chemistry and Molecular Engineering, Institute of Advanced Synthesis (IAS), Nanjing Tech University Nanjing 211880 P. R. China
| | - Qiang Wang
- School of Chemistry and Molecular Engineering, Institute of Advanced Synthesis (IAS), Nanjing Tech University Nanjing 211880 P. R. China
| | - Pengfei Liu
- School of Chemistry and Molecular Engineering, Institute of Advanced Synthesis (IAS), Nanjing Tech University Nanjing 211880 P. R. China
| | - Guang-Hui Chen
- Department of Chemistry, Shantou University Shantou Guangdong 515063 P. R. China
| | - Yanhui Yang
- School of Chemistry and Molecular Engineering, Institute of Advanced Synthesis (IAS), Nanjing Tech University Nanjing 211880 P. R. China
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7
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Lee K, Utama MIB, Kahn S, Samudrala A, Leconte N, Yang B, Wang S, Watanabe K, Taniguchi T, Altoé MVP, Zhang G, Weber-Bargioni A, Crommie M, Ashby PD, Jung J, Wang F, Zettl A. Ultrahigh-resolution scanning microwave impedance microscopy of moiré lattices and superstructures. Sci Adv 2020; 6:eabd1919. [PMID: 33298449 PMCID: PMC7725474 DOI: 10.1126/sciadv.abd1919] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/05/2020] [Accepted: 10/22/2020] [Indexed: 05/31/2023]
Abstract
Two-dimensional heterostructures composed of layers with slightly different lattice vectors exhibit new periodic structure known as moiré lattices, which, in turn, can support novel correlated and topological phenomena. Moreover, moiré superstructures can emerge from multiple misaligned moiré lattices or inhomogeneous strain distributions, offering additional degrees of freedom in tailoring electronic structure. High-resolution imaging of the moiré lattices and superstructures is critical for understanding the emerging physics. Here, we report the imaging of moiré lattices and superstructures in graphene-based samples under ambient conditions using an ultrahigh-resolution implementation of scanning microwave impedance microscopy. Although the probe tip has a gross radius of ~100 nm, spatial resolution better than 5 nm is achieved, which allows direct visualization of the structural details in moiré lattices and the composite super-moiré. We also demonstrate artificial synthesis of novel superstructures, including the Kagome moiré arising from the interplay between different layers.
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Affiliation(s)
- Kyunghoon Lee
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - M Iqbal Bakti Utama
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Department of Materials Science and Engineering, University of California at Berkeley, Berkeley, CA 94720, USA
| | - Salman Kahn
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | | | - Nicolas Leconte
- Department of Physics, University of Seoul, Seoul, South Korea
| | - Birui Yang
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
| | - Shuopei Wang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - M Virginia P Altoé
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Guangyu Zhang
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Collaborative Innovation Center of Quantum Matter, Beijing, China
| | | | - Michael Crommie
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Paul D Ashby
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Jeil Jung
- Department of Physics, University of Seoul, Seoul, South Korea
| | - Feng Wang
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
| | - Alex Zettl
- Department of Physics, University of California at Berkeley, Berkeley, CA 94720, USA.
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
- Kavli Energy NanoSciences Institute at the University of California, Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
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Kim G, Ma KY, Park M, Kim M, Jeon J, Song J, Barrios-Vargas JE, Sato Y, Lin YC, Suenaga K, Roche S, Yoo S, Sohn BH, Jeon S, Shin HS. Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN. Nat Commun 2020; 11:5359. [PMID: 33097718 PMCID: PMC7585426 DOI: 10.1038/s41467-020-19181-2] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/19/2020] [Accepted: 10/01/2020] [Indexed: 11/09/2022] Open
Abstract
Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics. Here, the authors explore the blue photoluminescence signal arising from the interface between graphene and h-BN arranged in in-plane heterostructures, and fabricate a blue light emitting device utilizing the heterojunction as the emitting layer.
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Affiliation(s)
- Gwangwoo Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Kyung Yeol Ma
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Minsu Park
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Minsu Kim
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Jonghyuk Jeon
- Department of Chemistry, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jinouk Song
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | | | - Yuta Sato
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, 305-8565, Japan
| | - Yung-Chang Lin
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, 305-8565, Japan
| | - Kazu Suenaga
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, 305-8565, Japan
| | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, 08193, Barcelona, Spain.,ICREA-Institució Catalana de Recerca i Estudis Avançats, 08010, Barcelona, Spain
| | - Seunghyup Yoo
- School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Byeong-Hyeok Sohn
- Department of Chemistry, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Hyeon Suk Shin
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea. .,Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea. .,Low Dimensional Carbon Material Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea.
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9
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Abstract
Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. Here, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.
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Affiliation(s)
- Eli Sutter
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Jia Wang
- Department of Mechanical & Materials Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
| | - Peter Sutter
- Department of Electrical & Computer Engineering, University of Nebraska-Lincoln, Lincoln, Nebraska 68588, United States
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10
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Abstract
The diversity of thermal transport properties in carbon nanomaterials enables them to be used in different thermal fields such as heat dissipation, thermal management, and thermoelectric conversion. In the past two decades, much effort has been devoted to study the thermal conductivities of different carbon nanomaterials. In this review, different theoretical methods and experimental techniques for investigating thermal transport in nanosystems are first summarized. Then, the thermal transport properties of various pure carbon nanomaterials including 1D carbon nanotubes, 2D graphene, 3D carbon foam, are reviewed in details and the associated underlying physical mechanisms are presented. Meanwhile, we discuss several important influences on the thermal conductivities of carbon nanomaterials, including size, structural defects, chemisorption and strain. Moreover, we introduce different nanostructuring pathways to manipulate the thermal conductivities of carbon-based nanocomposites and focus on the wave nature of phonons for controlling thermal transport. At last, we briefly review the potential applications of carbon nanomaterials in the fields of thermal devices and thermoelectric conversion.
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Affiliation(s)
- Xue-Kun Chen
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China. School of Mathematics and Physics, University of South China, Hengyang 421001, People's Republic of China
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11
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Abstract
This paper reports a scalable approach to achieve spatially selective graphene functionalization using multiscale wrinkles. Graphene wrinkles were formed by relieving the strain in thermoplastic polystyrene substrates conformally coated with fluoropolymer and graphene skin layers. Chemical reactivity of a fluorination process could be tuned by changing the local curvature of the graphene nanostructures. Patterned areas of graphene nanowrinkles and crumples followed by a single-process plasma reaction resulted in substrates with regions having different fluorination levels. Notably, conductivity of the functionalized graphene nanostructures could be locally tuned as a function of feature size without affecting the mechanical properties.
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Affiliation(s)
| | | | | | - Songwei Che
- Department of Chemical Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Bijentimala Keisham
- Department of Chemical Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Vikas Berry
- Department of Chemical Engineering , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
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13
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Gao B, Gao P, Lu S, Lv J, Wang Y, Ma Y. Interface structure prediction via CALYPSO method. Sci Bull (Beijing) 2019; 64:301-309. [PMID: 36659593 DOI: 10.1016/j.scib.2019.02.009] [Citation(s) in RCA: 83] [Impact Index Per Article: 16.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/04/2019] [Revised: 02/07/2019] [Accepted: 02/09/2019] [Indexed: 01/21/2023]
Abstract
The atomistic structures of solid-solid interfaces are of fundamental interests for understanding physical properties of interfacial materials. However, determination of interface structures faces a substantial challenge, both experimentally and theoretically. Here, we propose an efficient method for predicting interface structures via the generalization of our in-house developed CALYPSO method for structure prediction. We devised a lattice match toolkit that allows us to automatically search for the optimal lattice-matched superlattice for construction of the interface structures. In addition, bonding constraints (e.g., constraints on interatomic distances and coordination numbers of atoms) are imposed to generate better starting interface structures by taking advantages of the known bonding environment derived from the stable bulk phases. The interface structures evolve by following interfacially confined swarm intelligence algorithm, which is known to be efficient for exploration of potential energy surface. The method was validated by correctly predicting a number of known interface structures with only given information of two parent solids. The application of the developed method leads to prediction of two unknown grain boundary (GB) structures (r-GB and p-GB) of rutile TiO2 Σ5(2 1 0) under an O reducing atmosphere that contained Ti3+ as the result of O defects. Further calculations revealed that the intrinsic band gap of p-GB is reduced to 0.7 eV owing to substantial broadening of the Ti-3d interfacial levels from Ti3+ centers. Our results demonstrated that introduction of grain boundaries is an effective strategy to engineer the electronic properties and thus enhance the visible-light photoactivity of TiO2.
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Affiliation(s)
- Bo Gao
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China
| | - Pengyue Gao
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China
| | - Shaohua Lu
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China
| | - Jian Lv
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China
| | - Yanchao Wang
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China
| | - Yanming Ma
- State Key Laboratory of Superhard Materials & Innovation Center for Computational Physics Methods and Softwares, College of Physics, Jilin University, Changchun 130012, China; International Center of Future Science, Jilin University, Changchun 130012, China.
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14
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Chen X, Yang H, Wu B, Wang L, Fu Q, Liu Y. Epitaxial Growth of h-BN on Templates of Various Dimensionalities in h-BN-Graphene Material Systems. Adv Mater 2019; 31:e1805582. [PMID: 30687964 DOI: 10.1002/adma.201805582] [Citation(s) in RCA: 16] [Impact Index Per Article: 3.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/27/2018] [Revised: 12/25/2018] [Indexed: 06/09/2023]
Abstract
Epitaxy traditionally refers to the growth of a crystalline adlayer on a crystalline surface, and has been demonstrated in several simple material systems over decades. Beyond this, it is not clear whether the growth of 2D materials on templates of various dimensionalities is possible, and no effective theory or model is available for describing the complex epitaxial growth kinetics. Here a library of hexagonal boron nitride epitaxy is presented on graphene-hexagonal boron nitride templates of various dimensionalities, including 2D homo/heteromaterial surface and 1D interfaces of homo/heteromaterials. A framework that allows the description of various kinetic growth by combined geometric and structural modeling is developed. Using these tools, the underlying mechanisms for the complex merging process, grain boundary formation, edge-configuration-dependent growth difference, position-dependent size difference, and the correlation among epilayer orientation, crystal structure and geometry are elucidated. This work provides a general viewpoint for understanding epitaxial growth in complex systems.
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Affiliation(s)
- Xin Chen
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - He Yang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Bin Wu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Lifeng Wang
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
| | - Qiang Fu
- State Key Laboratory of Catalysis, Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian, 116023, P. R. China
| | - Yunqi Liu
- Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Science, Beijing, 100190, P. R. China
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15
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Kim G, Kim SS, Jeon J, Yoon SI, Hong S, Cho YJ, Misra A, Ozdemir S, Yin J, Ghazaryan D, Holwill M, Mishchenko A, Andreeva DV, Kim YJ, Jeong HY, Jang AR, Chung HJ, Geim AK, Novoselov KS, Sohn BH, Shin HS. Planar and van der Waals heterostructures for vertical tunnelling single electron transistors. Nat Commun 2019; 10:230. [PMID: 30651554 PMCID: PMC6335417 DOI: 10.1038/s41467-018-08227-1] [Citation(s) in RCA: 31] [Impact Index Per Article: 6.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/05/2018] [Accepted: 12/23/2018] [Indexed: 11/09/2022] Open
Abstract
Despite a rich choice of two-dimensional materials, which exists these days, heterostructures, both vertical (van der Waals) and in-plane, offer an unprecedented control over the properties and functionalities of the resulted structures. Thus, planar heterostructures allow p-n junctions between different two-dimensional semiconductors and graphene nanoribbons with well-defined edges; and vertical heterostructures resulted in the observation of superconductivity in purely carbon-based systems and realisation of vertical tunnelling transistors. Here we demonstrate simultaneous use of in-plane and van der Waals heterostructures to build vertical single electron tunnelling transistors. We grow graphene quantum dots inside the matrix of hexagonal boron nitride, which allows a dramatic reduction of the number of localised states along the perimeter of the quantum dots. The use of hexagonal boron nitride tunnel barriers as contacts to the graphene quantum dots make our transistors reproducible and not dependent on the localised states, opening even larger flexibility when designing future devices.
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Affiliation(s)
- Gwangwoo Kim
- Department of Energy Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Sung-Soo Kim
- Department of Chemistry, Seoul National University, Seoul, 08826, Republic of Korea.,Carbon Composite Materials Research Center, Korea Institute of Science and Technology (KIST), Wanju, 55324, Republic of Korea
| | - Jonghyuk Jeon
- Department of Chemistry, Seoul National University, Seoul, 08826, Republic of Korea
| | - Seong In Yoon
- Department of Energy Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Seokmo Hong
- Department of Chemistry, UNIST, Ulsan, 44919, Republic of Korea
| | - Young Jin Cho
- Department of Physics, Konkuk University, Seoul, 05029, Republic of Korea
| | - Abhishek Misra
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom.,Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India
| | - Servet Ozdemir
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Jun Yin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Davit Ghazaryan
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom.,Department of Physics, National Research University Higher School of Economics, Staraya Basmannaya 21/4, Moscow, 105066, Russian Federation
| | - Matthew Holwill
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Artem Mishchenko
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Daria V Andreeva
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Yong-Jin Kim
- Center for Multidimensional Carbon Materials, Institute of Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Hu Young Jeong
- UNIST Central Research Facilities (UCRF), UNIST, Ulsan, 44919, Republic of Korea
| | - A-Rang Jang
- Department of Energy Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan, 44919, Republic of Korea.,Department of Chemistry, UNIST, Ulsan, 44919, Republic of Korea
| | - Hyun-Jong Chung
- Department of Physics, Konkuk University, Seoul, 05029, Republic of Korea
| | - Andre K Geim
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, United Kingdom.
| | - Byeong-Hyeok Sohn
- Department of Chemistry, Seoul National University, Seoul, 08826, Republic of Korea.
| | - Hyeon Suk Shin
- Department of Energy Engineering, Ulsan National Institute of Science & Technology (UNIST), Ulsan, 44919, Republic of Korea. .,Department of Chemistry, UNIST, Ulsan, 44919, Republic of Korea. .,Center for Multidimensional Carbon Materials, Institute of Basic Science (IBS), Ulsan, 44919, Republic of Korea. .,Low Dimensional Carbon Material Center, UNIST, Ulsan, 44919, Republic of Korea.
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16
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Liu X, Hersam MC. Interface Characterization and Control of 2D Materials and Heterostructures. Adv Mater 2018; 30:e1801586. [PMID: 30039558 DOI: 10.1002/adma.201801586] [Citation(s) in RCA: 58] [Impact Index Per Article: 9.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/11/2018] [Revised: 04/09/2018] [Indexed: 05/28/2023]
Abstract
2D materials and heterostructures have attracted significant attention for a variety of nanoelectronic and optoelectronic applications. At the atomically thin limit, the material characteristics and functionalities are dominated by surface chemistry and interface coupling. Therefore, methods for comprehensively characterizing and precisely controlling surfaces and interfaces are required to realize the full technological potential of 2D materials. Here, the surface and interface properties that govern the performance of 2D materials are introduced. Then the experimental approaches that resolve surface and interface phenomena down to the atomic scale, as well as strategies that allow tuning and optimization of interfacial interactions in van der Waals heterostructures, are systematically reviewed. Finally, a future outlook that delineates the remaining challenges and opportunities for 2D material interface characterization and control is presented.
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Affiliation(s)
- Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208-3108, USA
| | - Mark C Hersam
- Applied Physics Graduate Program, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208-3108, USA
- Department of Materials Science and Engineering, Department of Chemistry, Department of Medicine, Department of Electrical Engineering and Computer Science, Northwestern University, 2220 Campus Drive, Evanston, IL, 60208-3108, USA
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17
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Zhang J, Xie W, Agiorgousis ML, Choe DH, Meunier V, Xu X, Zhao J, Zhang S. Quantum oscillation in carrier transport in two-dimensional junctions. Nanoscale 2018; 10:7912-7917. [PMID: 29666851 DOI: 10.1039/c8nr01359d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Two-dimensional (2D) junction devices have recently attracted considerable attention. Here, we show that most 2D junction structures, whether vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particular, a vertical structure cannot function as a vertical junction as having been widely believed in the literature. Due to a larger electrostatic screening, the bilayer region in the junction always has a smaller bandgap than its monolayer counterpart. As a result, a potential well, aside from the usual potential barrier, will form universally in the bilayer region to affect the hole or electron quantum transport in the form of transmission or reflection. Taking black phosphorus as an example, our calculations using a non-equilibrium Green function combined with density functional theory show a distinct oscillation in the transmission coefficient in a two-electrode prototypical device, and the results can be qualitatively understood using a simple quantum well model.
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Affiliation(s)
- Junfeng Zhang
- Research Institute of Materials Science of Shanxi Normal University & Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology, Linfen 041004, China
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18
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Lou S, Liu Y, Yang F, Lin S, Zhang R, Deng Y, Wang M, Tom KB, Zhou F, Ding H, Bustillo KC, Wang X, Yan S, Scott M, Minor A, Yao J. Three-dimensional Architecture Enabled by Strained Two-dimensional Material Heterojunction. Nano Lett 2018; 18:1819-1825. [PMID: 29462550 DOI: 10.1021/acs.nanolett.7b05074] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
Engineering the structure of materials endows them with novel physical properties across a wide range of length scales. With high in-plane stiffness and strength, but low flexural rigidity, two-dimensional (2D) materials are excellent building blocks for nanostructure engineering. They can be easily bent and folded to build three-dimensional (3D) architectures. Taking advantage of the large lattice mismatch between the constituents, we demonstrate a 3D heterogeneous architecture combining a basal Bi2Se3 nanoplate and wavelike Bi2Te3 edges buckling up and down forming periodic ripples. Unlike 2D heterostructures directly grown on substrates, the solution-based synthesis allows the heterostructures to be free from substrate influence during the formation process. The balance between bending and in-plane strain energies gives rise to controllable rippling of the material. Our experimental results show clear evidence that the wavelengths and amplitudes of the ripples are dependent on both the widths and thicknesses of the rippled material, matching well with continuum mechanics analysis. The rippled Bi2Se3/Bi2Te3 heterojunction broadens the horizon for the application of 2D materials heterojunction and the design and fabrication of 3D architectures based on them, which could provide a platform to enable nanoscale structure generation and associated photonic/electronic properties manipulation for optoelectronic and electromechanic applications.
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Affiliation(s)
- Shuai Lou
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Yin Liu
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Fuyi Yang
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Shuren Lin
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Ruopeng Zhang
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- The National Center for Electron Microscopy, Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Yang Deng
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Michael Wang
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Kyle B Tom
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Fei Zhou
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Hong Ding
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Karen C Bustillo
- The National Center for Electron Microscopy, Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Xi Wang
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Shancheng Yan
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
| | - Mary Scott
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- The National Center for Electron Microscopy, Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Andrew Minor
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- The National Center for Electron Microscopy, Molecular Foundry , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
| | - Jie Yao
- Department of Materials Science and Engineering , University of California , Berkeley , California 94720 , United States
- Materials Sciences Division , Lawrence Berkeley National Laboratory , Berkeley , California 94720 , United States
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19
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Zhao J, Cheng K, Han N, Zhang J. Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures. WIREs Comput Mol Sci 2017. [DOI: 10.1002/wcms.1353] [Citation(s) in RCA: 24] [Impact Index Per Article: 3.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Affiliation(s)
- Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Kai Cheng
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology); Ministry of Education; Dalian China
| | - Junfeng Zhang
- School of Physics and Information Engineering; Shanxi Normal University; Linfen China
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20
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Gao Y, Xu B. Controllable Interface Junction, In-Plane Heterostructures Capable of Mechanically Mediating On-Demand Asymmetry of Thermal Transports. ACS Appl Mater Interfaces 2017; 9:34506-34517. [PMID: 28895714 DOI: 10.1021/acsami.7b11508] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Designing structures with thermal rectification performance that can be regulated by or adapted to mechanical deformation is in great demand in wearable electronics. Herein, using nonequilibrium molecular dynamics simulation, we present an in-plane graphene-boron nitride heterostructure with a controlled interface junction and demonstrate that its thermal transport ability is asymmetric when reversing the direction of heat flow. Such thermal rectification performance can be further regulated by applying an external tensile loading due to the mitigation of stress concentration, phonon resonance, and phonon localization. The analyses on heat flow distribution, vibrational spectra, and phonon participation suggest that the out-of-plane phonon modes dominate thermal rectification at a small tensile strain, while the mechanical stress plays a dominant role in regulation at a large tensile strain due to the weakened localization of out-of-plane phonon modes. The effect of tensile loading on the thermal rectification is demonstrated by selective interface junction-enabled heterostructures, and the results indicate that both asymmetry and direction of thermal transport can be controlled by introducing defects to the interface junction and/or applying mechanical tensile strain. These findings and models are expected to provide an immediate guidance for designing and manufacturing 2D material-based devices with mechanically tunable thermal management capabilities.
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Affiliation(s)
- Yuan Gao
- Department of Mechanical and Aerospace Engineering, University of Virginia , Charlottesville, Virginia 22904, United States
| | - Baoxing Xu
- Department of Mechanical and Aerospace Engineering, University of Virginia , Charlottesville, Virginia 22904, United States
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21
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Rao CNR, Gopalakrishnan K. Borocarbonitrides, B xC yN z: Synthesis, Characterization, and Properties with Potential Applications. ACS Appl Mater Interfaces 2017; 9:19478-19494. [PMID: 27797466 DOI: 10.1021/acsami.6b08401] [Citation(s) in RCA: 25] [Impact Index Per Article: 3.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Borocarbonitrides, BxCyNz, constitute a new family of layered two-dimensional materials and can be considered to be derived from graphene. They can be simple composites containing graphene and BN domains or more complex materials possessing B-C and C-N bonds besides B-N and C-C bonds. Properties of these materials depend on the composition, and the method of synthesis, wherein one can traverse from the insulating end (BN) to the conducting end (graphene). In this article, we present an up-to-date review of the various aspects of borocarbonitrides including synthesis, characterization and properties. Some of the properties have potential applications, typical of them being in gas adsorption and energy devices such as supercapacitors, fuel cells and batteries. Performance of borocarbonitrides as catalysts in the electrochemical hydrogen evolution reaction is impressive. It is noteworthy that with certain compositions on borocarbonitrides, field-effect transistors can be fabricated.
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Affiliation(s)
- C N R Rao
- Chemistry and Physics of Materials Unit, New Chemistry Unit, International Centre for Materials Science, CSIR Centre of Excellence in Chemistry and Sheik Saqr Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur, Bangalore 560064, India
| | - K Gopalakrishnan
- Chemistry and Physics of Materials Unit, New Chemistry Unit, International Centre for Materials Science, CSIR Centre of Excellence in Chemistry and Sheik Saqr Laboratory, Jawaharlal Nehru Centre for Advanced Scientific Research , Jakkur, Bangalore 560064, India
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22
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Qi Y, Zhang Z, Deng B, Zhou X, Li Q, Hong M, Li Y, Liu Z, Zhang Y. Irreparable Defects Produced by the Patching of h-BN Frontiers on Strongly Interacting Re(0001) and Their Electronic Properties. J Am Chem Soc 2017; 139:5849-5856. [DOI: 10.1021/jacs.7b00647] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Affiliation(s)
- Yue Qi
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
| | - Zhepeng Zhang
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
| | - Bing Deng
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
| | - Xiebo Zhou
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People’s Republic of China
| | - Qiucheng Li
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
| | - Min Hong
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People’s Republic of China
| | - Yuanchang Li
- National
Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing 100190, People’ s Republic of China
| | - Zhongfan Liu
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
| | - Yanfeng Zhang
- Center
for Nanochemistry (CNC), Beijing National Laboratory for Molecular
Sciences, College of Chemistry and Molecular Engineering, Academy
for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, People’s Republic of China
- Department
of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, People’s Republic of China
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23
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Han N, Liu H, Zhang J, Gao J, Zhao J. Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction. Nanoscale 2017; 9:3585-3592. [PMID: 28246667 DOI: 10.1039/c6nr09962a] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The in-plane combination of graphene (G) and hexagonal-boron nitride (h-BN) leads to lateral h-BN/G heterostructures, which are promising candidates for novel two-dimensional electronics. The quality of the interface between G and h-BN domains is crucial for the device performance. By comprehensive first-principles calculations, we explore the heteroepitaxial growth of graphene along the edge of an h-BN domain on a Cu(111) surface and compare it with that on a Cu(111) terrace. We find that the graphene nucleation site strongly depends on the chemical potential of carbon and predeposited h-BN coverage. Under the suitable carbon concentration and coverage of h-BN, graphene mainly grows along the h-BN edge, leading to a sharp and straight h-BN/G interface. Our results provide insightful knowledge to synthesize well-defined h-BN/G and other lateral heterostructures.
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Affiliation(s)
- Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Hongsheng Liu
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China.
| | - Junfeng Zhang
- School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
| | - Junfeng Gao
- Institute of High Performance Computing, A*STAR, Singapore 138632, Singapore.
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Dalian University of Technology), Ministry of Education, Dalian 116024, China. and Beijing Computational Science Research Center, Beijing 100089, China
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24
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Barrios-Vargas JE, Mortazavi B, Cummings AW, Martinez-Gordillo R, Pruneda M, Colombo L, Rabczuk T, Roche S. Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures. Nano Lett 2017; 17:1660-1664. [PMID: 28195494 DOI: 10.1021/acs.nanolett.6b04936] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. By increasing the hBN grain density from a few percent to 100%, the system evolves from a good conductor to an insulator, with the mobility dropping by orders of magnitude and the sheet resistance reaching the MΩ regime. The Seebeck coefficient is suppressed above 40% mixing, while the thermal conductivity of polycrystalline hBN is found to be on the order of 30-120 Wm-1 K-1. These results, agreeing with available experimental data, provide guidelines for tuning G-hBN properties in the context of two-dimensional materials engineering. In particular, while we proved that both electrical and thermal properties are largely affected by morphological features (e.g., by the grain size and composition), we find in all cases that nanometer-sized polycrystalline G-hBN heterostructures are not good thermoelectric materials.
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Affiliation(s)
- José Eduardo Barrios-Vargas
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, 08193 Barcelona, Spain
| | - Bohayra Mortazavi
- Institute of Structural Mechanics, Bauhaus-Universität Weimar , Marienstrasse 15, D-99423 Weimar, Germany
| | - Aron W Cummings
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, 08193 Barcelona, Spain
| | - Rafael Martinez-Gordillo
- CINaM - Centre Interdisciplinaire de Nanoscience de Marseille, Aix-Marseille Université , Campus Luminy, Case 913, 13288 Marseille Cedex 9, France
| | - Miguel Pruneda
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, 08193 Barcelona, Spain
| | - Luciano Colombo
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, 08193 Barcelona, Spain
- Dipartimento di Fisica, Universit di Cagliari, Cittadella Universitaria , I-09042 Monserrato, Cagliari, Italy
| | - Timon Rabczuk
- Institute of Structural Mechanics, Bauhaus-Universität Weimar , Marienstrasse 15, D-99423 Weimar, Germany
| | - Stephan Roche
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, 08193 Barcelona, Spain
- ICREA - Institució Catalana de Recerca i Estudis Avançats , 08010 Barcelona, Spain
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Qi Y, Han N, Li Y, Zhang Z, Zhou X, Deng B, Li Q, Liu M, Zhao J, Liu Z, Zhang Y. Strong Adlayer-Substrate Interactions "Break" the Patching Growth of h-BN onto Graphene on Re(0001). ACS Nano 2017; 11:1807-1815. [PMID: 28110522 DOI: 10.1021/acsnano.6b07773] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Hetero-epitaxial growth of hexagonal boron nitride (h-BN) from the edges of graphene domains or vice versa has been widely observed during synthesis of in-plane heterostructures of h-BN-G on Rh(111), Ir(111), and even Cu foil. We report that on a strongly coupled Re(0001) substrate via a similar two-step sequential growth strategy, h-BN preferably nucleated on the edges of Re(0001) steps rather than on the edges of existing graphene domains. Statistically, one-third of the domain boundaries of graphene and h-BN were patched seamlessly, and the others were characterized by obvious "defect lines" when the total coverage approached a full monolayer. This imperfect merging behavior can be explained by translational misalignment and lattice mismatch of the resulting separated component domains. According to density functional theory calculations, this coexisting patching and non-patching growth behavior was radically mediated by the strong adlayer-substrate (A-S) interactions, as well as the disparate formation energies of the attachment of B-N pairs or B-N lines along the edges of the Re(0001) steps versus the graphene domains. This work will be of fundamental significance for the controllable synthesis of in-plane heterostructures constructed from two-dimensional layered materials with consideration of A-S interactions.
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Affiliation(s)
- Yue Qi
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Nannan Han
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education , Dalian 116024, People's Republic of China
| | - Yuanchang Li
- National Center for Nanoscience and Technology, Chinese Academy of Sciences , Beijing 100190, People's Republic of China
| | - Zhepeng Zhang
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Xiebo Zhou
- Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
| | - Bing Deng
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Qiucheng Li
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Mengxi Liu
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Jijun Zhao
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education , Dalian 116024, People's Republic of China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
- Department of Materials Science and Engineering, College of Engineering, Peking University , Beijing 100871, People's Republic of China
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26
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Tan X, Tahini HA, Smith SC. Hexagonal boron nitride and graphene in-plane heterostructures: An experimentally feasible approach to charge-induced switchable CO 2 capture. Chem Phys 2016; 478:139-44. [DOI: 10.1016/j.chemphys.2016.04.001] [Citation(s) in RCA: 22] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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27
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Ding N, Chen X, Wu CML. Mechanical properties and failure behaviors of the interface of hybrid graphene/hexagonal boron nitride sheets. Sci Rep 2016; 6:31499. [PMID: 27527371 PMCID: PMC4985750 DOI: 10.1038/srep31499] [Citation(s) in RCA: 32] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/10/2016] [Accepted: 07/18/2016] [Indexed: 12/02/2022] Open
Abstract
Hybrid graphene/h-BN sheet has been fabricated recently and verified to possess unusual physical properties. During the growth process, defects such as vacancies are unavoidably present at the interface between graphene and h-BN. In the present work, typical vacancy defects, which were located at the interface between graphene and h-BN, were studied by density functional theory. The interface structure, mechanical and electronic properties, and failure behavior of the hybrid graphene/h-BN sheet were investigated and compared. The results showed that the formation energy of the defective graphene/h-BN interface basically increased with increasing inflection angles. However, Young's modulus for all graphene/h-BN systems studied decreased with the increase in inflection angles. The intrinsic strength of the hybrid graphene/h-BN sheets was affected not only by the inflection angles, but also by the type of interface connection and the type of defects. The energy band structure of the hybrid interface could be tuned by applying mechanical strain to the systems. These results demonstrated that vacancies introduced significant effects on the mechanical and electronic properties of the hybrid graphene/h-BN sheet.
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Affiliation(s)
- Ning Ding
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR China
- Shandong Academy of Sciences, Jinan, PR China
| | | | - Chi-Man Lawrence Wu
- Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, PR China
- Shandong Academy of Sciences, Jinan, PR China
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28
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Abstract
Low thermal conductance across interface is often the limiting factor in managing heat in many advanced device applications. The most commonly used approach to enhance the thermal conductance is to reduce/eliminate the interfacial structural defects. Using a graphene/h-BN (Gr/h-BN) interface, we show surprisingly that topological defects are able to enhance the thermal conductance across the interface. It is found that the phonon transmission across the Gr/h-BN interface with 5|7 defects is higher than that of the pristine interface, which is in strong contrast to the common notion that interface defects promote phonon scattering. By analyzing the strain distribution and phonon vibrational spectra, we find that this abnormal enhancement in interfacial thermal conductance originates from the localization of the stress fields arising from misfit dislocations and their out-of-plane deformations at the interface. In the presence of the defects, the overall mismatch strain is reduced. In addition, the out-of-plane deformations screen the long-ranged dislocation strain fields, resulting in the stress fields to be localized only at the cores of the defects. This abnormal mechanism provides a new dimension to enhance the interfacial thermal conductance in two-dimensional heterostructures.
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Affiliation(s)
- Xiangjun Liu
- Institute of High Performance Computing, A*STAR , Singapore , 138632
| | - Gang Zhang
- Institute of High Performance Computing, A*STAR , Singapore , 138632
| | - Yong-Wei Zhang
- Institute of High Performance Computing, A*STAR , Singapore , 138632
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29
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Sun Q, Sun C, Du A, Dou S, Li Z. In-plane graphene/boron-nitride heterostructures as an efficient metal-free electrocatalyst for the oxygen reduction reaction. Nanoscale 2016; 8:14084-14091. [PMID: 27396486 DOI: 10.1039/c6nr03288e] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Exploiting metal-free catalysts for the oxygen reduction reaction (ORR) and understanding their catalytic mechanisms are vital for the development of fuel cells (FCs). Our study has demonstrated that in-plane heterostructures of graphene and boron nitride (G/BN) can serve as an efficient metal-free catalyst for the ORR, in which the C-N interfaces of G/BN heterostructures act as reactive sites. The formation of water at the heterointerface is both energetically and kinetically favorable via a four-electron pathway. Moreover, the water formed can be easily released from the heterointerface, and the catalytically active sites can be regenerated for the next cycle. Since G/BN heterostructures with controlled domain sizes have been successfully synthesized in recent reports (e.g. Nat. Nanotechnol., 2013, 8, 119), our results highlight the great potential of such heterostructures as a promising metal-free catalyst for the ORR in FCs.
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Affiliation(s)
- Qiao Sun
- Collaborative Innovation Center of Radiation Medicine of Jiangsu Higher Education Institutions, School of Radiation Medicine and Protection, Medical College of Soochow University, Soochow University, Suzhou 215123, China.
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30
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Li Q, Liu M, Zhang Y, Liu Z. Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties. Small 2016; 12:32-50. [PMID: 26439677 DOI: 10.1002/smll.201501766] [Citation(s) in RCA: 28] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2015] [Revised: 07/31/2015] [Indexed: 06/05/2023]
Abstract
Research on in-plane and vertically-stacked heterostructures of graphene and hexagonal boron nitride (h-BN) have attracted intense attentions for energy band engineering and device performance optimization of graphene. In this review article, recent advances in the controlled syntheses, interfacial structures, and electronic properties, as well as novel device constructions of h-BN and graphene heterostructures are highlighted. Firstly, diverse synthesis approaches for in-plane h-BN and graphene (h-BN-G) heterostructures are reviewed, and their applications in nanoelectronics are briefly introduced. Moreover, the interfacial structures and electronic properties of h-BN-G heterojunctions are discussed, and a zigzag type interface is found to preferentially evolve at the linking edge of the two structural analogues. Secondly, several synthetic routes for the vertically-stacked graphene/h-BN (G/h-BN) heterostructures are also reviewed. The role of h-BN as perfect dielectric layers in promoting the device performance of graphene is presented. Finally, future research directions in the synthesis and application of such heterostructures are discussed.
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Affiliation(s)
- Qiucheng Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
| | - Mengxi Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yanfeng Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing, 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China
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31
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Abstract
Hexagonal boron nitride (h-BN) attracts considerable interest particularly when it is prepared from borazine-based single-source precursors through chemical routes suitable for the shaping and the nanostructuration of the final ceramic.
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Affiliation(s)
- Samuel Bernard
- Institut Européen des membranes
- IEM
- UMR-5635
- Université de Montpellier
- 34095 Montpellier cedex 5
| | - Chrystelle Salameh
- Institut Européen des membranes
- IEM
- UMR-5635
- Université de Montpellier
- 34095 Montpellier cedex 5
| | - Philippe Miele
- Institut Européen des membranes
- IEM
- UMR-5635
- Université de Montpellier
- 34095 Montpellier cedex 5
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32
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Affiliation(s)
- Min Kan
- Department of Materials Science and Engineering; Peking University; Beijing China
- Kuang-Chi Institute of Advanced Technology; ShenZhen China
| | - Yawei Li
- Department of Materials Science and Engineering; Peking University; Beijing China
- Center for Applied Physics and Technology; Peking University; Beijing China
| | - Qiang Sun
- Department of Materials Science and Engineering; Peking University; Beijing China
- Center for Applied Physics and Technology; Peking University; Beijing China
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33
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Drost R, Kezilebieke S, M Ervasti M, Hämäläinen SK, Schulz F, Harju A, Liljeroth P. Synthesis of Extended Atomically Perfect Zigzag Graphene - Boron Nitride Interfaces. Sci Rep 2015; 5:16741. [PMID: 26584674 DOI: 10.1038/srep16741] [Citation(s) in RCA: 30] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2015] [Accepted: 10/19/2015] [Indexed: 11/08/2022] Open
Abstract
The combination of several materials into heterostructures is a powerful method for controlling material properties. The integration of graphene (G) with hexagonal boron nitride (BN) in particular has been heralded as a way to engineer the graphene band structure and implement spin- and valleytronics in 2D materials. Despite recent efforts, fabrication methods for well-defined G-BN structures on a large scale are still lacking. We report on a new method for producing atomically well-defined G-BN structures on an unprecedented length scale by exploiting the interaction of G and BN edges with a Ni(111) surface as well as each other.
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34
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Nandwana D, Ertekin E. Ripples, strain, and misfit dislocations: structure of graphene-boron nitride superlattice interfaces. Nano Lett 2015; 15:1468-1475. [PMID: 25647719 DOI: 10.1021/nl505005t] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
In recently synthesized two-dimensional superlattices of graphene and boron nitride, the atomic structure of the interface is complicated by a 2% lattice mismatch between the two materials. Using atomistic and continuum analysis, we show that the mismatch results in a competition between two strain-relieving mechanisms: misfit dislocations and rippling. For flat superlattices, beyond a critical pitch the interface is decorated by strain-relieving misfit dislocations. For superlattices that can deform out-of-plane, optimal ripple wavelengths emerge.
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Affiliation(s)
- Dinkar Nandwana
- Department of Mechanical Science and Engineering, University of Illinois at Urbana-Champaign , 1206 West Green Street, Urbana, Illinois 61801, United States
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35
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Liu M, Li Y, Chen P, Sun J, Ma D, Li Q, Gao T, Gao Y, Cheng Z, Qiu X, Fang Y, Zhang Y, Liu Z. Quasi-freestanding monolayer heterostructure of graphene and hexagonal boron nitride on Ir(111) with a zigzag boundary. Nano Lett 2014; 14:6342-6347. [PMID: 25268563 DOI: 10.1021/nl502780u] [Citation(s) in RCA: 29] [Impact Index Per Article: 2.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a focus of graphene research owing to its tunable bandgap and intriguing properties. We report herein the synthesis of a quasi-freestanding h-BN-G monolayer heterostructure on a weakly coupled Ir(111) substrate, where graphene and h-BN possess distinctly different heights and surface corrugations. An atomically sharp zigzag type boundary has been found to dominate the patching interface between graphene and h-BN, as evidenced by high-resolution Scanning tunneling microscopy investigation as well as density functional theory calculation. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the patching boundary. The present work offers a deep insight into the h-BN-graphene boundary structures both geometrically and electronically together with the effect of adlayer-substrate coupling.
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Affiliation(s)
- Mengxi Liu
- Center for Nanochemistry (CNC), Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University , Beijing 100871, People's Republic of China
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