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Zhong J, Yang M, Wang J, Li Y, Liu C, Mu D, Liu Y, Cheng N, Shi Z, Yang L, Zhuang J, Du Y, Hao W. Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization. ACS Nano 2024; 18:4343-4351. [PMID: 38277336 DOI: 10.1021/acsnano.3c10120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
The confinement of electrons in one-dimensional (1D) space highlights the prominence of the role of electron interactions or correlations, leading to a variety of fascinating physical phenomena. The quasi-1D electron states can exhibit a unique spin texture under spin-orbit interaction (SOI) and thus could generate a robust spin current by forbidden electron backscattering. Direct detection of such 1D spin or SOI information, however, is challenging due to complicated techniques. Here, we identify an anomalous planar Hall effect (APHE) in the magnetotransport of quasi-1D van der Waals (vdW) topological materials as exemplified by Bi4Br4, which arises from the quantum interference correction of 1D weak antilocalization (WAL) to the ordinary planar Hall effect and demonstrates a deviation from the usual sine and cosine curves. The occurrence of 1D WAL is correlated to the line-shape Fermi surface and persistent spin texture of (100) topological surface states of Bi4Br4, as revealed by both our angle-resolved photoemission spectroscopy and first-principles calculations. By generalizing the observation of APHE to other non-vdW bulk materials, this work provides a possible characteristic of magnetotransport for identifying the spin/SOI information and quantum interference behavior of 1D states in 3D topological material.
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Affiliation(s)
- Jingyuan Zhong
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Ming Yang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Yaqi Li
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Ningyan Cheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Zhixiang Shi
- School of Physics and Key Laboratory of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jincheng Zhuang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Yi Du
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Weichang Hao
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
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2
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Milligan G, Yao ZF, Cordova DLM, Tong B, Arguilla MQ. Single Quasi-1D Chains of Sb 2Se 3 Encapsulated within Carbon Nanotubes. Chem Mater 2024; 36:730-741. [PMID: 38282683 PMCID: PMC10809716 DOI: 10.1021/acs.chemmater.3c02114] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Revised: 12/27/2023] [Accepted: 12/28/2023] [Indexed: 01/30/2024]
Abstract
The realization of stable monolayers from 2D van der Waals (vdW) solids has fueled the search for exfoliable crystals with even lower dimensionalities. To this end, 1D and quasi-1D (q-1D) vdW crystals comprising weakly bound subnanometer-thick chains have been discovered and demonstrated to exhibit nascent physics in the bulk. Although established micromechanical and liquid-phase exfoliation methods have been applied to access single isolated chains from bulk crystals, interchain vdW interactions with nonequivalent strengths have greatly hindered the ability to achieve uniform single isolated chains. Here, we report that encapsulation of the model q-1D vdW crystal, Sb2Se3, within single-walled carbon nanotubes (CNTs) circumvents the relatively stronger c-axis vdW interactions between the chains and allows for the isolation of single chains with structural integrity. High-resolution transmission electron microscopy and selected area electron diffraction studies of the Sb2Se3@CNT heterostructure revealed that the structure of the [Sb4Se6]n chain is preserved, enabling us to systematically probe the size-dependent properties of Sb2Se3 from the bulk down to a single chain. We show that ensembles of the [Sb4Se6]n chains within CNTs display Raman confinement effects and an emergent band-like absorption onset around 600 nm, suggesting a strong blue shift of the near-infrared band gap of Sb2Se3 into the visible range upon encapsulation. First-principles density functional theory calculations further provided qualitative insight into the structures and interactions that could manifest in the Sb2Se3@CNT heterostructure. Spatial visualization of the calculated electron density difference map of the heterostructure indicated a minimal degree of electron donation from the host CNT to the guest [Sb4Se6]n chain. Altogether, this model system demonstrates that 1D and q-1D vdW crystals with strongly anisotropic vdW interactions can be precisely studied by encapsulation within CNTs with suitable diameters, thereby opening opportunities in understanding dimension-dependent properties of a plethora of emergent vdW solids at or approaching the subnanometer regime.
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Affiliation(s)
- Griffin
M. Milligan
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Ze-Fan Yao
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
- Department
of Chemical and Biomolecular Engineering, University of California Irvine, Irvine, California 92697, United States
| | | | - Baixin Tong
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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3
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Mu H, Zhuang R, Cui N, Cai S, Yu W, Yuan J, Zhang J, Liu H, Mei L, He X, Mei Z, Zhang G, Bao Q, Lin S. Alternating BiI 3-BiI van der Waals Photodetector with Low Dark Current and High-Performance Photodetection. ACS Nano 2023; 17:21317-21327. [PMID: 37862706 DOI: 10.1021/acsnano.3c05849] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/22/2023]
Abstract
The emerging two-dimensional (2D) van der Waals (vdW) materials and their heterostructures hold great promise for optoelectronics and photonic applications beyond strictly lattice-matching constraints and grade interfaces. However, previous photodetectors and optoelectronic devices rely on relatively simple vdW heterostructures with one or two blocks. The realization of high-order heterostructures has been exponentially challenging due to conventional layer-by-layer arduous restacking or sequential synthesis. In this study, we present an approach involving the direct exfoliation of high-quality BiI3-BiI heterostructure nanosheets with alternating blocks, derived from solution-grown binary heterocrystals. These heterostructure-based photodetectors offer several notable advantages. Leveraging the "active layer energetics" of BiI layers and the establishment of a significant depletion region, our photodetector demonstrates a significant reduction in dark current compared with pure BiI3 devices. Specifically, the photodetector achieves an extraordinarily low dark current (<9.2 × 10-14 A at 5 V bias voltage), an impressive detectivity of 8.8 × 1012 Jones at 638 nm, and a rapid response time of 3.82 μs. These characteristics surpass the performance of other metal-semiconductor-metal (MSM) photodetectors based on various 2D materials and structures at visible wavelengths. Moreover, our heterostructure exhibits a broad-band photoresponse, covering the visible, near-infrared (NIR)-I, and NIR-II regions. In addition to these promising results, our heterostructure also demonstrated the potential for flexible and imaging applications. Overall, our study highlights the potential of alternating vdW heterostructures for future optoelectronics with low power consumption, fast response, and flexible requirements.
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Affiliation(s)
- Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Renzhong Zhuang
- Fujian Provincial Key Laboratory of Welding Quality Intelligent Evaluation, Longyan University, Longyan 364012, P. R. China
| | - Nan Cui
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Songhua Cai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hunghom, Kowloon 999077, Hong Kong, P. R. China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Jian Yuan
- School of Physics and Electronic Information, Huaibei Normal University, Huaibei 235000, P. R. China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Hao Liu
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Luyao Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Zengxia Mei
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
| | - Guangyu Zhang
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
- Institute of Physics, Chinese Academy of Science, Beijing 100190, P. R. China
| | - Qiaoliang Bao
- Institute of Energy Materials Science (IEMS), University of Shanghai for Science and Technology, Shanghai 200093, P. R. China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523808, P. R. China
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4
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Yu R, Xiao F, Lei W, Wang W, Ma Y, Gong X, Ming X. Emerging quasi-one-dimensional material NbS 4 with high carrier mobility and good visible-light adsorption performance for nanoscale applications. Phys Chem Chem Phys 2023; 25:30066-30078. [PMID: 37906277 DOI: 10.1039/d3cp03676f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
Due to their unique structure, abundant properties and potential applications, low-dimensional materials with covalently bonded building blocks through van der Waals (vdW) interactions have sparked widespread interest. Recently, the bulk phase NbS4 consisting of one-dimensional (1D) chains has been synthesized successfully, adding a new member to the group V metallic polychalcogenide family. In the present study, based on density functional theory calculations, we obtained a better understanding of the stability, mechanical properties, electronic structures, transport properties and optical performances of the bulk phase NbS4. Furthermore, the possibility of exfoliating 1D single-chain nanowires from the bulk phase was uncovered. Both bulk phase and 1D nanowires show dynamic, thermal, and mechanical stabilities. The bulk phase possesses an indirect band gap of 1.39 eV with high anisotropic carrier mobilities of 471.814 cm2 s-1 v-1 for electrons (along the b axis direction) and 546.92 cm2 s-1 v-1 for holes (along the a axis direction). The single-chain nanowire exhibits remarkable flexibility and can resist 24% tensile strain along the chain direction. The decreased dimension from the bulk phase to the individual 1D chain not only makes the band gap increase to 1.81 eV but also results in an indirect-to-direct band gap transition, indicating a strong quantum confinement effect. The 1D single-chain nanowire also shows high carrier mobilities of 111.91 cm2 s-1 v-1 for electrons and 316.63 cm2 s-1 v-1 for holes along the chain direction. In addition, both bulk phase and 1D nanowire display excellent visible light absorption performance along the chain direction and the absorption coefficients reach the order of 106 and 105 cm-1. These promising properties render quasi 1D NbS4 as candidate materials for nanoscale applications in high-performance optoelectronic and nanoelectronic devices. The predicted unconventional properties of NbS4 not only provide a meaningful complement to the fascinating quasi 1D material family, but also will attract extensive interest from a wide audience to explore unanticipated properties and design new nanoscale devices based on NbS4.
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Affiliation(s)
- Ru Yu
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Feng Xiao
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Yiping Ma
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xujia Gong
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xing Ming
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- MOE Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Key Laboratory of Low-dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
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5
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Cordova DM, Chua K, Huynh RM, Aoki T, Arguilla MQ. Anisotropy-Driven Crystallization of Dimensionally Resolved Quasi-1D Van der Waals Nanostructures. J Am Chem Soc 2023; 145:22413-22424. [PMID: 37713247 PMCID: PMC10591320 DOI: 10.1021/jacs.3c05887] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/05/2023] [Indexed: 09/16/2023]
Abstract
Unusual behavior in solids emerges from the complex interplay between crystalline order, composition, and dimensionality. In crystals comprising weakly bound one-dimensional (1D) or quasi-1D (q-1D) chains, properties such as charge density waves, topologically protected states, and indirect-to-direct band gap crossovers have been predicted to arise. However, the experimental demonstration of many of these nascent physics in 1D or q-1D van der Waals (vdW) crystals is obscured by the highly anisotropic bonding between the chains, stochasticity of top-down exfoliation, and the lack of synthetic strategies to control bottom-up growth. Herein, we report the directed crystallization of a model q-1D vdW phase, Sb2S3, into dimensionally resolved nanostructures. We demonstrate the uncatalyzed growth of highly crystalline Sb2S3 nanowires, nanoribbons, and quasi-2D nanosheets with thicknesses in the range of 10 to 100 nm from the bottom-up crystallization of [Sb4S6]n chains. We found that dimensionally resolved nanostructures emerge from two distinct chemical vapor growth pathways defined by diverse covalent intrachain and anisotropic vdW interchain interactions and controlled precursor ratios in the vapor phase. At sub-100 nm nanostructure thicknesses, we observe the hardening of phonon modes, blue-shifting of optical band gaps, and the emergence of a new high-energy photoluminescence peak. The directional growth of weakly bound 1D ribbons or chains into well-resolved nanocrystalline morphologies provides opportunities to develop ordered nanostructures and hierarchical assemblies that are suitable for a wide range of optoelectronic and quantum devices.
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Affiliation(s)
| | - Kenneth Chua
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Rebecca Mai Huynh
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
| | - Toshihiro Aoki
- Irvine
Materials Research Institute, University
of California Irvine, Irvine, California 92697, United States
| | - Maxx Q. Arguilla
- Department
of Chemistry, University of California Irvine, Irvine, California 92697, United States
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6
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Li Y, Wang S, Hong J, Zhang N, Wei X, Zhu T, Zhang Y, Xu Z, Liu K, Jiang M, Xu H. Polarization-Sensitive Photodetector Based on High Crystallinity Quasi-1D BiSeI Nanowires Synthesized via Chemical Vapor Deposition. Small 2023; 19:e2302623. [PMID: 37357165 DOI: 10.1002/smll.202302623] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2023] [Revised: 05/15/2023] [Indexed: 06/27/2023]
Abstract
Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400-800 nm) with high responsivity of 5880 mA W-1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.
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Affiliation(s)
- Yubin Li
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Shiyao Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an, 710072, P. R. China
| | - Jinhua Hong
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Nannan Zhang
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Xin Wei
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Tao Zhu
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
| | - Yao Zhang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
| | - Zhuo Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Kaiqiang Liu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
| | - Man Jiang
- State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon Technology, School of Physics, Northwest University, Xi'an, 710069, P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid Chemistry of Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, P. R. China
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7
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Han J, Mao P, Chen H, Yin JX, Wang M, Chen D, Li Y, Zheng J, Zhang X, Ma D, Ma Q, Yu ZM, Zhou J, Liu CC, Wang Y, Jia S, Weng Y, Hasan MZ, Xiao W, Yao Y. Optical bulk-boundary dichotomy in a quantum spin Hall insulator. Sci Bull (Beijing) 2023:S2095-9273(23)00074-9. [PMID: 36740530 DOI: 10.1016/j.scib.2023.01.038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/20/2022] [Revised: 11/23/2022] [Accepted: 01/23/2023] [Indexed: 02/05/2023]
Abstract
The bulk-boundary correspondence is a critical concept in topological quantum materials. For instance, a quantum spin Hall insulator features a bulk insulating gap with gapless helical boundary states protected by the underlying Z2 topology. However, the bulk-boundary dichotomy and distinction are rarely explored in optical experiments, which can provide unique information about topological charge carriers beyond transport and electronic spectroscopy techniques. Here, we utilize mid-infrared absorption micro-spectroscopy and pump-probe micro-spectroscopy to elucidate the bulk-boundary optical responses of Bi4Br4, a recently discovered room-temperature quantum spin Hall insulator. Benefiting from the low energy of infrared photons and the high spatial resolution, we unambiguously resolve a strong absorption from the boundary states while the bulk absorption is suppressed by its insulating gap. Moreover, the boundary absorption exhibits strong polarization anisotropy, consistent with the one-dimensional nature of the topological boundary states. Our infrared pump-probe microscopy further measures a substantially increased carrier lifetime for the boundary states, which reaches one nanosecond scale. The nanosecond lifetime is about one to two orders longer than that of most topological materials and can be attributed to the linear dispersion nature of the helical boundary states. Our findings demonstrate the optical bulk-boundary dichotomy in a topological material and provide a proof-of-principal methodology for studying topological optoelectronics.
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Affiliation(s)
- Junfeng Han
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Pengcheng Mao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Analysis & Testing Center, Beijing Institute of Technology, Beijing 100081, China
| | - Hailong Chen
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China; School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jia-Xin Yin
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Maoyuan Wang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Xiamen University, Xiamen 361005, China
| | - Dongyun Chen
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yongkai Li
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jingchuan Zheng
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Xu Zhang
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Dashuai Ma
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Department of Physics, Chongqing University, Chongqing 400044, China
| | - Qiong Ma
- Department of Physics, Boston College, Chestnut Hill MA 02467, USA
| | - Zhi-Ming Yu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Jinjian Zhou
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Cheng-Cheng Liu
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China
| | - Yeliang Wang
- School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing 100081, China
| | - Shuang Jia
- International Center for Quantum Materials, School of Physics, Peking University, Beijing 100871, China
| | - Yuxiang Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; Songshan Lake Materials Laboratory, Dongguan 523808, China
| | - M Zahid Hasan
- Laboratory for Topological Quantum Matter and Advanced Spectroscopy (B7), Department of Physics, Princeton University, Princeton NJ 08544, USA
| | - Wende Xiao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
| | - Yugui Yao
- Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China; Yangtze Delta Region Academy of Beijing Institute of Technology, Jiaxing 314000, China; Beijing Key Laboratory of Nanophotonics & Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing 100081, China.
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8
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Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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9
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Yang M, Liu Y, Zhou W, Liu C, Mu D, Liu Y, Wang J, Hao W, Li J, Zhong J, Du Y, Zhuang J. Large-Gap Quantum Spin Hall State and Temperature-Induced Lifshitz Transition in Bi 4Br 4. ACS Nano 2022; 16:3036-3044. [PMID: 35049268 DOI: 10.1021/acsnano.1c10539] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Searching for quantum spin Hall insulators with large fully opened energy gap to overcome the thermal disturbance at room temperature has attracted tremendous attention because of the robustness of one-dimensional (1D) spin-momentum locked topological edge states in the practical applications of electronic devices and spintronics. Here, we report the investigation of topological nature of monolayer Bi4Br4 by the techniques of angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy. The possible topological nontriviality of 1D edge state integrals within the large energy gap (∼0.2 eV) is revealed by the first-principle calculations. The ARPES measurements at different temperatures show a temperature-induced Lifshitz transition, corresponding to the resistivity anomaly evoked by the chemical potential shift. The connection between the emergency of superconductivity and the Lifshitz transition is discussed.
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Affiliation(s)
- Ming Yang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Wei Zhou
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500, China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yani Liu
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Jiaou Wang
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Weichang Hao
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jin Li
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Jianxin Zhong
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yi Du
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Jincheng Zhuang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
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10
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Liu Y, Chen R, Zhang Z, Bockrath M, Lau CN, Zhou YF, Yoon C, Li S, Liu X, Dhale N, Lv B, Zhang F, Watanabe K, Taniguchi T, Huang J, Yi M, Oh JS, Birgeneau RJ. Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4I 4 Field Effect Transistors. Nano Lett 2022; 22:1151-1158. [PMID: 35077182 DOI: 10.1021/acs.nanolett.1c04264] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Bi4I4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi4I4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi4I4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.
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Affiliation(s)
- Yulu Liu
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Ruoyu Chen
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Zheneng Zhang
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Marc Bockrath
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, Ohio 43210, United States
| | - Yan-Feng Zhou
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Korea
| | - Sheng Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Xiaoyuan Liu
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Nikhil Dhale
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Bing Lv
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080-3021, United States
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Jianwei Huang
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Ming Yi
- Department of Physics and Astronomy, Rice University, Houston, Texas 77005, United States
| | - Ji Seop Oh
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, United States
| | - Robert J Birgeneau
- Department of Physics, University of California, Berkeley, Berkeley, California 94720, United States
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11
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Lee J, Chung YK, Sung D, Jeong BJ, Oh S, Choi JY, Huh J. Carrier mobility of one-dimensional vanadium selenide (V 2Se 9) monolayer and nanoribbon systems: DFT study. Nanotechnology 2022; 33:135703. [PMID: 34902844 DOI: 10.1088/1361-6528/ac4288] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Accepted: 12/13/2021] [Indexed: 06/14/2023]
Abstract
Vanadium selenide (V2Se9) is a true one-dimensional (1D) crystal composed of atomic nanochains bonded by van der Waals (vdW) interactions. Recent experiments revealed the mechanical exfoliation of newly synthesized V2Se9. In this study, we predicted the electronic and transport properties of V2Se9through computational analyses. We calculated the intrinsic carrier mobility of V2Se9monolayers (MLs) and nanoribbons (NRs) using density functional theory and deformation potential theory. We found that the electron mobility of the two-dimensional (2D) (010)-plane ML of V2Se9is highly anisotropic, reachingμ2D,ze=1327cm2V-1s-1across the chain direction. The electron mobility of 1D NR systems in a (010)-plane ML of V2Se9along the chain direction continuously increased as the thickness increased from 1-chain to 4-chain NR (width below 3 nm). Interestingly, the electron mobility of 1D 4-chain NR along the chain direction (μ1D,xe=775cm2V-1s-1) was higher than that of a 2D (010)-plane ML (μ2D,xe=567cm2V-1s-1). These results demonstrate the potential of vdW-1D crystal V2Se9as a new nanomaterial for ultranarrow (sub-3 nm width) optoelectronic devices with high electron mobility.
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Affiliation(s)
- Junho Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - You Kyoung Chung
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Dongchul Sung
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seungbae Oh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jae-Young Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Joonsuk Huh
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Institute of Quantum Biophysics, Sungkyunkwan University, Suwon 16419, Republic of Korea
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12
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Peng X, Zhang X, Dong X, Ma D, Chen D, Li Y, Li J, Han J, Wang Z, Liu CC, Zhou J, Xiao W, Yao Y. Observation of Topological Edge States on α-Bi 4Br 4 Nanowires Grown on TiSe 2 Substrates. J Phys Chem Lett 2021; 12:10465-10471. [PMID: 34672593 DOI: 10.1021/acs.jpclett.1c02586] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A time-reversal invariant two-dimensional (2D) topological insulator (TI) is characterized by the gapless helical edge states propagating along the perimeter of the system. However, the small band gap in the 2D TIs discovered so far hinders their applications. Recently, we predicted that single-layer Bi4Br4 is a 2D TI with a remarkable band gap and that α-Bi4Br4 crystals can host topological edge states at the step edges. Here we report the growth of α-Bi4Br4 nanowires with (102)-oriented top surfaces on the TiSe2 substrates and the direct observation of the predicted topological edge states at the step edges of the nanowires using scanning tunneling microscopy. The coupling between the edge states leads to the formation of surface states at the (102) top surfaces of the nanowires. Our work demonstrates the existence of topological edge states in α-Bi4Br4 and paves the way for developing α-Bi4Br4-based devices for a high-temperature quantum spin Hall effect.
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Affiliation(s)
- Xianglin Peng
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Zhang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Xu Dong
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dashuai Ma
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Dongyun Chen
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Yongkai Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Ji Li
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
| | - Junfeng Han
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Zhiwei Wang
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Cheng-Cheng Liu
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Jinjian Zhou
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Wende Xiao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
| | - Yugui Yao
- Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement, Ministry of Education, School of Physics, Beijing Institute of Technology, Beijing, 100081, China
- Beijing Key Lab of Nanophotonics and Ultrafine Optoelectronic Systems, Beijing Institute of Technology, Beijing, 100081, China
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13
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Zhuang J, Li J, Liu Y, Mu D, Yang M, Liu Y, Zhou W, Hao W, Zhong J, Du Y. Epitaxial Growth of Quasi-One-Dimensional Bismuth-Halide Chains with Atomically Sharp Topological Non-Trivial Edge States. ACS Nano 2021; 15:14850-14857. [PMID: 34583466 DOI: 10.1021/acsnano.1c04928] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Quantum spin Hall insulators (QSHIs) have one-dimensional (1D) spin-momentum locked topological edge states (ES) inside the bulk band gap, which can serve as dissipationless channels for the practical applications in low consumption electronics and high performance spintronics. However, obtaining the clean and atomically sharp ES which serves as ideal 1D spin-polarized nondissipative conducting channels is demanding and still a challenge. Here, we report the formation of the quasi-1D Bi4I4 nanoribbons on the surface of Bi(111) with the support of the graphene-terminated 6H-SiC(0001) and the direct observation of the topological ES at the step edges by the scanning tunneling microscopy (STM) and spectroscopic-imaging results. The ES reside surround the edge of Bi4I4 nanoribbons and exhibits noteworthy robustness against nontime reversal symmetry (non-TRS) perturbations. The theoretical simulations verify the topological nontriviality of 1D ES, which is retained after considering the presence of the underlying Bi(111). Our study supports the existence of topological ES in Bi4I4 nanoribbons, benefiting to engineer the topological features by using the 1D nanoribbons as building blocks.
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Affiliation(s)
- Jincheng Zhuang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jin Li
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Ming Yang
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Yani Liu
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
| | - Wei Zhou
- School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu 215500, China
| | - Weichang Hao
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
| | - Jianxin Zhong
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yi Du
- School of Physics and BUAA-UOW Joint Research Centre, Beihang University, Haidian District, Beijing 100191, China
- Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia
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14
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Paz WS, Menezes MG, Batista NN, Sanchez-Santolino G, Velický M, Varela M, Capaz RB, Palacios JJ. Franckeite as an Exfoliable Naturally Occurring Topological Insulator. Nano Lett 2021; 21:7781-7788. [PMID: 34461016 DOI: 10.1021/acs.nanolett.1c02742] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Franckeite is a natural superlattice composed of two alternating layers of different composition which has shown potential for optoelectronic applications. In part, the interest in franckeite lies in its layered nature which makes it easy to exfoliate into very thin heterostructures. Not surprisingly, its chemical composition and lattice structure are so complex that franckeite has escaped screening protocols and high-throughput searches of materials with nontrivial topological properties. On the basis of density functional theory calculations, we predict a quantum phase transition originating from stoichiometric changes in one of franckeite composing layers (the quasihexagonal one). While for a large concentration of Sb, franckeite is a sequence of type-II semiconductor heterojunctions, for a large concentration of Sn, these turn into type-III, much alike InAs/GaSb artificial heterojunctions, and franckeite becomes a strong topological insulator. Transmission electron microscopy observations confirm that such a phase transition may actually occur in nature.
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Affiliation(s)
- Wendel S Paz
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória, ES 29075-910, Brazil
- Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro, RJ 21941-972, Brazil
| | - Marcos G Menezes
- Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro, RJ 21941-972, Brazil
| | - Nathanael N Batista
- Departamento de Física, Universidade Federal do Espírito Santo, Vitória, ES 29075-910, Brazil
- Instituto Federal do Espirito Santo, Cariacica, ES 29150-410, Brazil
| | - Gabriel Sanchez-Santolino
- Facultad de Ciencias Físicas & Instituto Plurisciplinar. Universidad Complutense de Madrid 28040 Madrid, Spain
| | - Matěj Velický
- J. Heyrovský Institute of Physical Chemistry, Czech Academy of Sciences, Dolejškova 2155/3, 182 23 Prague 8, Czech Republic
| | - María Varela
- Facultad de Ciencias Físicas & Instituto Plurisciplinar. Universidad Complutense de Madrid 28040 Madrid, Spain
| | - Rodrigo B Capaz
- Instituto de Física, Universidade Federal do Rio de Janeiro, Caixa Postal 68528, Rio de Janeiro, RJ 21941-972, Brazil
| | - Juan José Palacios
- Departamento de Física de la Materia Condensada, Instituto Nicolás Cabrera (INC), and Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, Cantoblanco, 28049 Madrid, Spain
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15
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Abstract
Topology, a mathematical concept, has recently become a popular and truly transdisciplinary topic encompassing condensed matter physics, solid state chemistry, and materials science. Since there is a direct connection between real space, namely atoms, valence electrons, bonds, and orbitals, and reciprocal space, namely bands and Fermi surfaces, via symmetry and topology, classifying topological materials within a single-particle picture is possible. Currently, most materials are classified as trivial insulators, semimetals, and metals or as topological insulators, Dirac and Weyl nodal-line semimetals, and topological metals. The key ingredients for topology are certain symmetries, the inert pair effect of the outer electrons leading to inversion of the conduction and valence bands, and spin-orbit coupling. This review presents the topological concepts related to solids from the viewpoint of a solid-state chemist, summarizes techniques for growing single crystals, and describes basic physical property measurement techniques to characterize topological materials beyond their structure and provide examples of such materials. Finally, a brief outlook on the impact of topology in other areas of chemistry is provided at the end of the article.
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Affiliation(s)
- Nitesh Kumar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Satya N. Guin
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Kaustuv Manna
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Chandra Shekhar
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for
Chemical
Physics of Solids, 01187 Dresden, Germany
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16
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Lee WG, Sung D, Lee J, Chung YK, Kim BJ, Choi KH, Lee SH, Jeong BJ, Choi JY, Huh J. Tuning the electronic properties of highly anisotropic 2D dangling-bond-free sheets from 1D V 2Se 9 chain structures. Nanotechnology 2020; 32:095203. [PMID: 33290270 DOI: 10.1088/1361-6528/abc6de] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
True one-dimensional (1D) van der Waals materials can form two-dimensional (2D) dangling-bond-free anisotropic surfaces. Dangling bonds on surfaces act as defects for transporting charge carriers. In this study, we consider true 1D materials to be V2Se9 chains, and then the electronic structures of 2D sheets composed of true 1D V2Se9 chains are calculated. The (010) plane has indirect bandgap with 0.757 eV (1.768 eV), while the (111̅) plane shows a nearly direct bandgap of 1.047 eV (2.118 eV) for DFT-D3 (HSE06) correction, respectively. The (111̅) plane of V2Se9 is expected to be used in optoelectronic devices because it contains a nearly direct bandgap. Partial charge analysis indicates that the (010) plane exhibits interchain interaction is stronger than the (111̅) plane. To investigate the strain effect, we increased the interchain distance of planes until an indirect-to-direct bandgap transition occurred. The (010) plane then demonstrated a direct bandgap when interchain distance increased by 30%, while the (111̅) plane demonstrated a direct bandgap when the interchain distance increased by 10%. In mechanical sensors, this change in the bandgap was induced by the interchain distance.
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Affiliation(s)
- Weon-Gyu Lee
- Department of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
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17
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Xu C, Liu Y, Cai P, Li B, Jiao W, Li Y, Zhang J, Zhou W, Qian B, Jiang X, Shi Z, Sankar R, Zhang J, Yang F, Zhu Z, Biswas P, Qian D, Ke X, Xu X. Anisotropic Transport and Quantum Oscillations in the Quasi-One-Dimensional TaNiTe 5: Evidence for the Nontrivial Band Topology. J Phys Chem Lett 2020; 11:7782-7789. [PMID: 32856921 DOI: 10.1021/acs.jpclett.0c02382] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
The past decade has witnessed the burgeoning discovery of a variety of topological states of matter with distinct nontrivial band topologies. Thus far, most materials that have been studied possess two-dimensional or three-dimensional electronic structures, with only a few exceptions that host quasi-one-dimensional (quasi-1D) topological electronic properties. Here we present clear-cut evidence for Dirac Fermions in the quasi-1D telluride TaNiTe5. We show that its transport behaviors are highly anisotropic, and we observe nontrivial Berry phases via quantum oscillation measurements. The nontrivial band topology is further corroborated by first-principles calculations. Our results may help to guide the future quest for topological states in this new family of quasi-1D ternary chalcogenides.
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Affiliation(s)
- Chunqiang Xu
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, United States
| | - Yi Liu
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
| | - Pinggen Cai
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
| | - Bin Li
- New Energy Technology Engineering Laboratory of Jiangsu Province and School of Science, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
- National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenhe Jiao
- Department of Physics, Zhejiang University of Science and Technology, Hangzhou 310023, China
| | - Yunlong Li
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Junyi Zhang
- Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Wei Zhou
- Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Bin Qian
- Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Xuefan Jiang
- Department of Physics, Changshu Institute of Technology, Changshu 215500, China
| | - Zhixiang Shi
- School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China
| | - Raman Sankar
- Institute of Physics, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Jinglei Zhang
- High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230031, China
| | - Feng Yang
- Wuhan National High Magnetic Field Center, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Zengwei Zhu
- Wuhan National High Magnetic Field Center, School of Physics, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Pabitra Biswas
- ISIS Pulsed Neutron and Muon Source, STFC Rutherford Appleton Laboratory, Harwell Campus, Didcot, Oxfordshire OX11 0QX, United Kingdom
| | - Dong Qian
- Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
- Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Xianglin Ke
- Department of Physics and Astronomy, Michigan State University, East Lansing, Michigan 48824-2320, United States
| | - Xiaofeng Xu
- Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China
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18
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Lee WG, Chung YK, Lee J, Kim BJ, Chae S, Jeong BJ, Choi JY, Huh J. Edge Defect-Free Anisotropic Two-Dimensional Sheets with Nearly Direct Band Gaps from a True One-Dimensional Van der Waals Nb 2Se 9 Material. ACS Omega 2020; 5:10800-10807. [PMID: 32455200 PMCID: PMC7240825 DOI: 10.1021/acsomega.0c00388] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2020] [Accepted: 04/27/2020] [Indexed: 05/07/2023]
Abstract
Dangling-bond-free two-dimensional (2D) materials can be isolated from the bulk structures of one-dimensional (1D) van der Waals materials to produce edge-defect-free 2D materials. Conventional 2D materials have dangling bonds on their edges, which act as scattering centers that deteriorate the transport properties of carriers. Highly anisotropic 2D sheets, made of 1D van der Waals Nb2Se9 material, have three planar structures depending on the cutting direction of the bulk Nb2Se9 crystal. To investigate the applications of these 2D Nb2Se9 sheets, we calculated the band structures of the three planar sheets and observed that two sheets had nearly direct band gaps, which were only slightly greater (0.01 eV) than the indirect band gaps. These energy differences were smaller than the thermal energy at room temperature. The 2D Nb2Se9 plane with an indirect band gap had the shortest interchain distance for selenium ions among the three planes and exhibited significant interchain interactions on the conduction band. The interchain strain induced an indirect-to-direct band gap transition in the 2D Nb2Se9 sheets. These 2D sheets of Nb2Se9 with direct band gaps also had different band structures because of different interactions between chains, implying that they can have different charge mobilities. We expect these dangling-bond-free 2D Nb2Se9 sheets to be applied in optoelectronic devices because they allow for nearly direct band gaps. They can also be used in mechanical sensors because the band gaps can be controlled by varying the interchain strain.
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Affiliation(s)
- Weon-Gyu Lee
- Department
of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - You Kyoung Chung
- Department
of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Junho Lee
- Department
of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bum Jun Kim
- SKKU
Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sudong Chae
- School
of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School
of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Young Choi
- SKKU
Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- School
of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Joonsuk Huh
- Department
of Chemistry, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU
Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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19
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Abstract
Bismuth is gaining importance as a key element of functional quantum materials. The effects of spin-orbit coupling (SOC) are at the heart of many exciting proposals for next-generation quantum technologies, including topological materials for efficient information transmission and energy-saving applications. The "heavy" element bismuth and its compounds are predestined for SOC-induced topological properties, but materials design is challenged by a complex link between them and the chemical composition and crystal structure. Nevertheless, a lot can be learned about a certain property by testing its limits with compositional and/or structure modifications. We survey a handful of topological bismuth-based materials that bear structural and chemical semblance to the early topological insulators, antimony-doped elemental bismuth, Bi2Se3 and Bi2Te3. Chemical bonding via p orbitals and modular structure underlie all considered bismuth chalcogenides, subhalides, and chalcogenide halides and allow us to correlate the evolution of chemical bonding and structure with variability of the topological properties, although materials design should not be regarded as a building blocks set. Over the past decade, material discoveries have unearthed a plethora of topological properties, and bismuth is very fertile as a progenitor of a rich palette of exotic quantum materials, ranging from strong and weak 3D and crystalline topological insulators over topological metals and semimetals to magnetic topological insulators, while preserving the general layered structure motif.
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Affiliation(s)
- Anna Isaeva
- Faculty of Physics, Technische Universität Dresden, 01062 Dresden, Germany.,Leibniz IFW Dresden, Institute for Solid-State and Materials Research, Helmholtzstrasse 20, 01069 Dresden, Germany
| | - Michael Ruck
- Faculty of Chemistry and Food Chemistry, Technische Universität Dresden, 01062 Dresden, Germany.,Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Strasse 40, 01187 Dresden, Germany
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20
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Abstract
Structural and optical properties as well as chemical bonding of BiI3 at elevated pressures are investigated by means of refinements of X-ray powder diffraction data, measurements of the optical absorption, and calculations of the band structure involving bonding analysis in real space. The data evidence the onset of a phase transition from trigonal (hR24) BiI3 into PuBr3-type (oS16) BiI3 around 4.6 GPa. This high-pressure modification remains stable up to 40 GPa, the highest pressure of this study. The phase exhibits semiconducting properties with constantly decreasing band gap between 5 and 18 GPa. Above this pressure, the absorbance edge broadens significantly. Extrapolation of the determined band gap values implies a semiconductor to metal transition at approximately 35 GPa. The value is in accordance with subtle structural anomalies and the results of band structure calculations. Topological analysis of the computed electron density and the electron-localizability indicator reveal fingerprints for weak covalent Bi-I contributions in addition to dominating ionic interactions for both modifications.
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21
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Marrazzo A, Gibertini M, Campi D, Mounet N, Marzari N. Relative Abundance of [Formula: see text] Topological Order in Exfoliable Two-Dimensional Insulators. Nano Lett 2019; 19:8431-8440. [PMID: 31658415 DOI: 10.1021/acs.nanolett.9b02689] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Quantum spin Hall insulators make up a class of two-dimensional materials with a finite electronic band gap in the bulk and gapless helical edge states. In the presence of time-reversal symmetry, [Formula: see text] topological order distinguishes the topological phase from the ordinary insulating one. Some of the phenomena that can be hosted in these materials, from one-dimensional low-dissipation electronic transport to spin filtering, could be promising for many technological applications in the fields of electronics, spintronics, and topological quantum computing. Nevertheless, the rarity of two-dimensional materials that can exhibit nontrivial [Formula: see text] topological order at room temperature hinders development. Here, we screen a comprehensive database we recently identified of 1825 monolayers that can be exfoliated from experimentally known compounds to search for novel quantum spin Hall insulators. Using density-functional and many-body perturbation theory simulations, we identify 13 monolayers that are candidates for quantum spin Hall insulators including high-performing materials such as AsCuLi2 and (platinum) jacutingaite (Pt2HgSe3). We also identify monolayer Pd2HgSe3 (palladium jacutingaite) as a novel Kane-Mele quantum spin Hall insulator and compare it with platinum jacutingaite. A handful of promising materials are mechanically stable and exhibit [Formula: see text] topological order, either unperturbed or driven by small amounts of strain. Such screening highlights a relative abundance of [Formula: see text] topological order of around 1% and provides an optimal set of candidates for experimental efforts.
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Affiliation(s)
- Antimo Marrazzo
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL) , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Marco Gibertini
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL) , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
- Department of Quantum Matter Physics , University of Geneva , 24 Quai Ernest Ansermet , CH-1211 Geneva , Switzerland
| | - Davide Campi
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL) , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Nicolas Mounet
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL) , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
| | - Nicola Marzari
- Theory and Simulation of Materials (THEOS) and National Centre for Computational Design and Discovery of Novel Materials (MARVEL) , École Polytechnique Fédérale de Lausanne , 1015 Lausanne , Switzerland
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22
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Walker JS, Fagan JA, Biacchi AJ, Kuehl VA, Searles TA, Hight Walker AR, Rice WD. Global Alignment of Solution-Based Single-Wall Carbon Nanotube Films via Machine-Vision Controlled Filtration. Nano Lett 2019; 19:7256-7264. [PMID: 31507183 DOI: 10.1021/acs.nanolett.9b02853] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Over the past decade, substantial progress has been made in the chemical control (chiral enrichment, length sorting, handedness selectivity, and filling substance) of single-wall carbon nanotubes (SWCNTs). Recently, it was shown that large, horizontally aligned films can be created out of postprocessed SWCNT solutions. Here, we use machine-vision automation and parallelization to simultaneously produce globally aligned SWCNT films using pressure-driven filtration. Feedback control enables filtration to occur with a constant flow rate that not only improves the nematic ordering of the SWCNT films but also provides the ability to align a wide range of SWCNT types and on a variety of nanoporous membranes using the same filtration parameters. Using polarized optical spectroscopic techniques, we show that under standard implementation, meniscus combing produces a two-dimensional radial SWCNT alignment on one side of the film. After we flatten the meniscus through silanization, spatially resolved nematicity maps on both sides of the SWCNT film reveal global alignment across the entire structure. From experiments changing ionic strength and membrane charging, we provide evidence that the SWCNT alignment mechanism stems from an interplay of intertube interactions and ordered membrane charging. This work opens up the possibility of creating globally aligned SWCNT film structures for a new generation of nanotube electronics and optical control elements.
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Affiliation(s)
- Joshua S Walker
- Department of Physics , University of Wyoming , Laramie , Wyoming 82071 , United States
| | - Jeffrey A Fagan
- Materials Science and Engineering Division , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - Adam J Biacchi
- Nanoscale Device Characterization Division , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - Valerie A Kuehl
- Department of Chemistry , University of Wyoming , Laramie , Wyoming 82071 , United States
| | - Thomas A Searles
- Department of Physics and Astronomy , Howard University , Washington , D.C. 20059 , United States
| | - Angela R Hight Walker
- Nanoscale Device Characterization Division , National Institute of Standards and Technology , Gaithersburg , Maryland 20899 , United States
| | - William D Rice
- Department of Physics , University of Wyoming , Laramie , Wyoming 82071 , United States
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23
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Li X, Chen D, Jin M, Ma D, Ge Y, Sun J, Guo W, Sun H, Han J, Xiao W, Duan J, Wang Q, Liu CC, Zou R, Cheng J, Jin C, Zhou J, Goodenough JB, Zhu J, Yao Y. Pressure-induced phase transitions and superconductivity in a quasi-1-dimensional topological crystalline insulator α-Bi 4Br 4. Proc Natl Acad Sci U S A 2019; 116:17696-700. [PMID: 31420513 DOI: 10.1073/pnas.1909276116] [Citation(s) in RCA: 22] [Impact Index Per Article: 4.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022] Open
Abstract
Great progress has been achieved in the research field of topological states of matter during the past decade. Recently, a quasi-1-dimensional bismuth bromide, Bi4Br4, has been predicted to be a rotational symmetry-protected topological crystalline insulator; it would also exhibit more exotic topological properties under pressure. Here, we report a thorough study of phase transitions and superconductivity in a quasihydrostatically pressurized α-Bi4Br4 crystal by performing detailed measurements of electrical resistance, alternating current magnetic susceptibility, and in situ high-pressure single-crystal X-ray diffraction together with first principles calculations. We find a pressure-induced insulator-metal transition between ∼3.0 and 3.8 GPa where valence and conduction bands cross the Fermi level to form a set of small pockets of holes and electrons. With further increase of pressure, 2 superconductive transitions emerge. One shows a sharp resistance drop to 0 near 6.8 K at 3.8 GPa; the transition temperature gradually lowers with increasing pressure and completely vanishes above 12.0 GPa. Another transition sets in around 9.0 K at 5.5 GPa and persists up to the highest pressure of 45.0 GPa studied in this work. Intriguingly, we find that the first superconducting phase might coexist with a nontrivial rotational symmetry-protected topology in the pressure range of ∼3.8 to 4.3 GPa; the second one is associated with a structural phase transition from monoclinic C2/m to triclinic P-1 symmetry.
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24
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Noguchi R, Takahashi T, Kuroda K, Ochi M, Shirasawa T, Sakano M, Bareille C, Nakayama M, Watson MD, Yaji K, Harasawa A, Iwasawa H, Dudin P, Kim TK, Hoesch M, Kandyba V, Giampietri A, Barinov A, Shin S, Arita R, Sasagawa T, Kondo T. A weak topological insulator state in quasi-one-dimensional bismuth iodide. Nature 2019; 566:518-522. [DOI: 10.1038/s41586-019-0927-7] [Citation(s) in RCA: 80] [Impact Index Per Article: 16.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/08/2018] [Accepted: 11/24/2018] [Indexed: 11/09/2022]
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25
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Dhar N, Syed N, Mohiuddin M, Jannat A, Zavabeti A, Zhang BY, Datta RS, Atkin P, Mahmood N, Esrafilzadeh D, Daeneke T, Kalantar-Zadeh K. Exfoliation Behavior of van der Waals Strings: Case Study of Bi 2S 3. ACS Appl Mater Interfaces 2018; 10:42603-42611. [PMID: 30426735 DOI: 10.1021/acsami.8b14702] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/23/2023]
Abstract
The family of crystals constituting covalently bound strings, held together by van der Waals forces, can be exfoliated into smaller entities, similar to crystals made of van der Waals sheets. Depending on the anisotropy of such crystals, as well as the spacing between their strings in each direction, van der Waals sheets or ribbons can be obtained after the exfoliation process. In this work, we demonstrate that ultrathin nanoribbons of bismuth sulfide (Bi2S3) can be synthesized via a high-power sonication process. The thickness and width of these ribbons are governed by the van der Waals spacings around the strings within the parent crystal. The lengths of the nanoribbons are initially limited by the dimensions of the starting bulk particles. Interestingly, these nanoribbons change stoichiometry and composition and are elongated when the duration of agitation increases because of Ostwald ripening. An application of the exfoliated van der Waals strings is presented for optical biosensing using photoluminescence of Bi2S3 nanoribbons, reaching detection limits of less than 10 nM L-1 in response to bovine serum albumin. The concept of exfoliating van der Waals strings could be extended to a large class of crystals for creating bodies ranging from sheets to strings, with optoelectronic properties different from that of their bulk counterparts.
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Affiliation(s)
- Nripen Dhar
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Nitu Syed
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Md Mohiuddin
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Azmira Jannat
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Ali Zavabeti
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Bao Yue Zhang
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Robi S Datta
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Paul Atkin
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Nasir Mahmood
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Dorna Esrafilzadeh
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Torben Daeneke
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
| | - Kourosh Kalantar-Zadeh
- School of Engineering , RMIT University , Melbourne , Victoria 3000 , Australia
- School of Chemical Engineering , University of New South Wales (UNSW) , Kensington , New South Wales 2052 , Australia
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26
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Zhang Q, Liu C, Liu X, Liu J, Cui Z, Zhang Y, Yang L, Zhao Y, Xu TT, Chen Y, Wei J, Mao Z, Li D. Thermal Transport in Quasi-1D van der Waals Crystal Ta 2Pd 3Se 8 Nanowires: Size and Length Dependence. ACS Nano 2018; 12:2634-2642. [PMID: 29474086 DOI: 10.1021/acsnano.7b08718] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Van der Waals (vdW) crystals with covalently bonded building blocks assembled together through vdW interactions have attracted tremendous attention recently because of their interesting properties and promising applications. Compared to the explosive research on two-dimensional (2D) vdW materials, quasi-one-dimensional (quasi-1D) vdW crystals have received considerably less attention, while they also present rich physics and engineering implications. Here we report on the thermal conductivity of exfoliated quasi-1D Ta2Pd3Se8 vdW nanowires. Interestingly, even though the interatomic interactions along each molecular chain are much stronger than the interchain vdW interactions, the measured thermal conductivity still demonstrates a clear dependence on the cross-sectional size up to >110 nm. The results also reveal that partial ballistic phonon transport can persist over 13 μm at room temperature along the molecular chain direction, the longest experimentally observed ballistic transport distance with observable effects on thermal conductivity so far. First-principles calculations suggest that the ultralong ballistic phonon transport arises from the highly focused longitudinal phonons propagating along the molecular chains. These data help to understand phonon transport through quasi-1D vdW crystals, facilitating various applications of this class of materials.
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Affiliation(s)
- Qian Zhang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Chenhan Liu
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Xue Liu
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Jinyu Liu
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Zhiguang Cui
- Department of Mechanical Engineering and Engineering Science , The University of North Carolina at Charlotte , Charlotte , North Carolina 28223 , United States
| | - Yin Zhang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Lin Yang
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Yang Zhao
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
| | - Terry T Xu
- Department of Mechanical Engineering and Engineering Science , The University of North Carolina at Charlotte , Charlotte , North Carolina 28223 , United States
| | - Yunfei Chen
- School of Mechanical Engineering and Jiangsu Key Laboratory for Design and Manufacture of Micro-Nano Biomedical Instruments , Southeast University , Nanjing 210096 , PR China
| | - Jiang Wei
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Zhiqiang Mao
- Department of Physics and Engineering Physics , Tulane University , New Orleans , Louisiana 70118 , United States
| | - Deyu Li
- Department of Mechanical Engineering , Vanderbilt University , Nashville , Tennessee 37235 , United States
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27
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Weiz A, Anh ML, Kaiser M, Rasche B, Herrmannsdörfer T, Doert T, Ruck M. Optimized Synthesis of the Bismuth Subiodides Bi
m
I
4
(
m
= 4, 14, 16, 18) and the Electronic Properties of Bi
14
I
4
and Bi
18
I
4. Eur J Inorg Chem 2017. [DOI: 10.1002/ejic.201700999] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Alexander Weiz
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
| | - Mai Lê Anh
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
| | - Martin Kaiser
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
| | - Bertold Rasche
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
| | | | - Thomas Doert
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
| | - Michael Ruck
- Fakultät Chemie und Lebensmittelchemie Technische Universität Dresden 01062 Dresden Germany
- Max‐Planck‐Institut für Chemische Physik fester Stoffe Nöthnitzer Str. 40 01187 Dresden Germany
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28
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Babanly MB, Chulkov EV, Aliev ZS, Shevelkov AV, Amiraslanov IR. Phase diagrams in materials science of topological insulators based on metal chalcogenides. RUSS J INORG CHEM+ 2017. [DOI: 10.1134/s0036023617130034] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/23/2022]
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29
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Wang X, Bian G, Xu C, Wang P, Hu H, Zhou W, Brown SA, Chiang TC. Topological phases in double layers of bismuthene and antimonene. Nanotechnology 2017; 28:395706. [PMID: 28745615 DOI: 10.1088/1361-6528/aa825f] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Two-dimensional topological insulators show great promise for spintronic applications. Much attention has been placed on single atomic or molecular layers, such as bismuthene. The selections of such materials are, however, limited. To broaden the base of candidate materials with desirable properties for applications, we report herein an exploration of the physics of double layers of bismuthene and antimonene. The electronic structure of a film depends on the number of layers, and it can be modified by epitaxial strain, by changing the effective spin-orbit coupling strength, and by the manner in which the layers are geometrically stacked. First-principles calculations for the double layers reveal a number of phases, including topological insulators, topological semimetals, Dirac semimetals, trivial semimetals, and trivial insulators. Their phase boundaries and the stability of the phases are investigated. The results illustrate a rich pattern of phases that can be realized by tuning lattice strain and effective spin-orbit coupling.
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Affiliation(s)
- Xiaoxiong Wang
- Department of Applied Physics, Nanjing University of Science and Technology, Nanjing 210094, People's Republic of China. Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, United States of America. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, United States of America
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30
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Rong LY, Ma JZ, Nie SM, Lin ZP, Li ZL, Fu BB, Kong LY, Zhang XZ, Huang YB, Weng HM, Qian T, Ding H, Tai RZ. Electronic structure of SrSn 2As 2 near the topological critical point. Sci Rep 2017; 7:6133. [PMID: 28733663 PMCID: PMC5522476 DOI: 10.1038/s41598-017-05386-x] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/05/2017] [Accepted: 05/30/2017] [Indexed: 11/09/2022] Open
Abstract
Topological materials with exotic quantum properties are promising candidates for quantum spin electronics. Different classes of topological materials, including Weyl semimetal, topological superconductor, topological insulator and Axion insulator, etc., can be connected to each other via quantum phase transition. For example, it is believed that a trivial band insulator can be twisted into topological phase by increasing spin-orbital coupling or changing the parameters of crystal lattice. With the results of LDA calculation and measurement by angle-resolved photoemission spectroscopy (ARPES), we demonstrate in this work that the electronic structure of SrSn2As2 single crystal has the texture of band inversion near the critical point. The results indicate the possibility of realizing topological quantum phase transition in SrSn2As2 single crystal and obtaining different exotic quantum states.
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Affiliation(s)
- L-Y Rong
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China.,University of Chinese Academy of Sciences, Beijing, China
| | - J-Z Ma
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China. .,University of Chinese Academy of Sciences, Beijing, China.
| | - S-M Nie
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - Z-P Lin
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - Z-L Li
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - B-B Fu
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - L-Y Kong
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - X-Z Zhang
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Y-B Huang
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China
| | - H-M Weng
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - T Qian
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - H Ding
- Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.,University of Chinese Academy of Sciences, Beijing, China
| | - R-Z Tai
- Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai, 201204, China.
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31
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Back M, Trave E, Mazzucco N, Riello P, Benedetti A. Tuning the upconversion light emission by bandgap engineering in bismuth oxide-based upconverting nanoparticles. Nanoscale 2017; 9:6353-6361. [PMID: 28451657 DOI: 10.1039/c6nr09350g] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
In the field of novel applications involving upconverting processes, the determination of new strategies for realizing emission-tunable nanomaterials is a challenge. In this work the design of Y3+ and Er3+ codoped bismuth oxide-based upconverting nanoparticles is presented, evidencing that the active role of the matrix allows for the emission selectivity with chromaticity control. The bandgap of the bismuth oxide-based host can be manipulated in the range of 0.65 eV, consequently leading to upconversion emission color tunability from red to yellow-greenish. The resulting fine control of the nanoparticle chromaticity through accurate host bandgap engineering reveals a novel concept for the development of a new generation of upconverting nanophosphors.
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Affiliation(s)
- M Back
- Dipartimento di Scienze Molecolari e Nanosistemi, Università Ca' Foscari Venezia, via Torino 155, 30172 Mestre - Venezia, Italy.
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Liu X, Du H, Wang J, Tian M, Sun X, Wang B. Resolving the one-dimensional singularity edge states of Bi(1 1 1) thin films. J Phys Condens Matter 2017; 29:185002. [PMID: 28272025 DOI: 10.1088/1361-648x/aa655a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report our investigation on the electronic properties of the step edges on a Bi(1 1 1) surface in epitiaxially grown thin films, using scanning tunneling microscopy and spectroscopy. Our results show three differential conductance peaks including the previously reported peak in the spectra recorded at the step edges. Our analysis indicates that all of the three peaks can be ascribed to the van Hove singularities and thus to the band extrema of the one-dimensional edge bands, according to the quasiparticle interference and the Fourier transform patterns. These edge states show an overall penetration length of about 5 nm, but they also show different spatial distributions perpendicular to the edge. The well-determined band extrema may provide information for establishing a better model to describe the electronic topology of the step edge in the Bi(1 1 1) films.
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Affiliation(s)
- Xiaogang Liu
- Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics, Key Laboratory of Strong-Coupled Quantum Matter Physics (CAS), University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
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Affiliation(s)
- Huaqing Huang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics; Tsinghua University; Beijing China
- Collaborative Innovation Center of Quantum Matter; Tsinghua University; Beijing China
| | - Yong Xu
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics; Tsinghua University; Beijing China
- Collaborative Innovation Center of Quantum Matter; Tsinghua University; Beijing China
- RIKEN Center for Emergent Matter Science (CEMS); Wako Japan
| | - Jianfeng Wang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics; Tsinghua University; Beijing China
- Collaborative Innovation Center of Quantum Matter; Tsinghua University; Beijing China
| | - Wenhui Duan
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics; Tsinghua University; Beijing China
- Collaborative Innovation Center of Quantum Matter; Tsinghua University; Beijing China
- Institute for Advanced Study; Tsinghua University; Beijing China
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Manzoni G, Gragnaniello L, Autès G, Kuhn T, Sterzi A, Cilento F, Zacchigna M, Enenkel V, Vobornik I, Barba L, Bisti F, Bugnon P, Magrez A, Strocov VN, Berger H, Yazyev OV, Fonin M, Parmigiani F, Crepaldi A. Evidence for a Strong Topological Insulator Phase in ZrTe_{5}. Phys Rev Lett 2016; 117:237601. [PMID: 27982645 DOI: 10.1103/physrevlett.117.237601] [Citation(s) in RCA: 34] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2016] [Indexed: 05/05/2023]
Abstract
The complex electronic properties of ZrTe_{5} have recently stimulated in-depth investigations that assigned this material to either a topological insulator or a 3D Dirac semimetal phase. Here we report a comprehensive experimental and theoretical study of both electronic and structural properties of ZrTe_{5}, revealing that the bulk material is a strong topological insulator (STI). By means of angle-resolved photoelectron spectroscopy, we identify at the top of the valence band both a surface and a bulk state. The dispersion of these bands is well captured by ab initio calculations for the STI case, for the specific interlayer distance measured in our x-ray diffraction study. Furthermore, these findings are supported by scanning tunneling spectroscopy revealing the metallic character of the sample surface, thus confirming the strong topological nature of ZrTe_{5}.
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Affiliation(s)
- G Manzoni
- Universitá degli Studi di Trieste, Via Alfonso Valerio 2, Trieste 34127, Italy
| | - L Gragnaniello
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - G Autès
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - T Kuhn
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - A Sterzi
- Universitá degli Studi di Trieste, Via Alfonso Valerio 2, Trieste 34127, Italy
| | - F Cilento
- Elettra-Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste I-34149, Italy
| | - M Zacchigna
- Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park - Basovizza, I-34149 Trieste, Italy
| | - V Enenkel
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - I Vobornik
- Officina dei Materiali (IOM)-CNR, Laboratorio TASC, Area Science Park - Basovizza, I-34149 Trieste, Italy
| | - L Barba
- Institute of Crystallography, CNR, Area Science Park, Strada Statale 14, km 163.5 Trieste I-34149, Italy
| | - F Bisti
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - Ph Bugnon
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - A Magrez
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - V N Strocov
- Swiss Light Source, Paul Scherrer Institut, CH-5232 Villigen, Switzerland
| | - H Berger
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - O V Yazyev
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- National Centre for Computational Design and Discovery of Novel Materials MARVEL, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
| | - M Fonin
- Department of Physics, University of Konstanz, 78457 Konstanz, Germany
| | - F Parmigiani
- Universitá degli Studi di Trieste, Via Alfonso Valerio 2, Trieste 34127, Italy
- Elettra-Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste I-34149, Italy
- International Faculty, University of Köln, 50937 Köln, Germany
| | - A Crepaldi
- Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
- Elettra-Sincrotrone Trieste S.C.p.A., Strada Statale 14, km 163.5, Trieste I-34149, Italy
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Ito S, Feng B, Arita M, Takayama A, Liu RY, Someya T, Chen WC, Iimori T, Namatame H, Taniguchi M, Cheng CM, Tang SJ, Komori F, Kobayashi K, Chiang TC, Matsuda I. Proving Nontrivial Topology of Pure Bismuth by Quantum Confinement. Phys Rev Lett 2016; 117:236402. [PMID: 27982650 DOI: 10.1103/physrevlett.117.236402] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/01/2016] [Indexed: 06/06/2023]
Abstract
The topology of pure Bi is controversial because of its very small (∼10 meV) band gap. Here we perform high-resolution angle-resolved photoelectron spectroscopy measurements systematically on 14-202 bilayer Bi films. Using high-quality films, we succeed in observing quantized bulk bands with energy separations down to ∼10 meV. Detailed analyses on the phase shift of the confined wave functions precisely determine the surface and bulk electronic structures, which unambiguously show nontrivial topology. The present results not only prove the fundamental property of Bi but also introduce a capability of the quantum-confinement approach.
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Affiliation(s)
- S Ito
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - B Feng
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - M Arita
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-0046, Japan
| | - A Takayama
- Department of Physics, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033, Japan
| | - R-Y Liu
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - T Someya
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - W-C Chen
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan 30076, Republic of China
| | - T Iimori
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - H Namatame
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-0046, Japan
| | - M Taniguchi
- Hiroshima Synchrotron Radiation Center (HSRC), Hiroshima University, Higashi-Hiroshima, Hiroshima 739-0046, Japan
| | - C-M Cheng
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan 30076, Republic of China
| | - S-J Tang
- National Synchrotron Radiation Research Center (NSRRC), Hsinchu, Taiwan 30076, Republic of China
- Department of Physics and Astronomy, National Tsing Hua University, Hsinchu, Taiwan 30013, Republic of China
| | - F Komori
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
| | - K Kobayashi
- Department of Physics, Ochanomizu University, Bunkyo-ku, Tokyo 112-8610, Japan
| | - T-C Chiang
- Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, USA
| | - I Matsuda
- Institute for Solid State Physics (ISSP), The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
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Thirupathaiah S, Ghosh S, Jha R, Rienks EDL, Dolui K, Ravi Kishore VV, Büchner B, Das T, Awana VPS, Sarma DD, Fink J. Unusual Dirac Fermions on the Surface of a Noncentrosymmetric α-BiPd Superconductor. Phys Rev Lett 2016; 117:177001. [PMID: 27824469 DOI: 10.1103/physrevlett.117.177001] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2016] [Indexed: 06/06/2023]
Abstract
Combining multiple emergent correlated properties such as superconductivity and magnetism within the topological matrix can have exceptional consequences in garnering new and exotic physics. Here, we study the topological surface states from a noncentrosymmetric α-BiPd superconductor by employing angle-resolved photoemission spectroscopy and first-principles calculations. We observe that the Dirac surface states of this system have several interesting and unusual properties, compared to other topological surface states. The surface state is strongly anisotropic and the in-plane Fermi velocity varies rigorously on rotating the crystal about the y axis. Moreover, it acquires an unusual band gap as a function of k_{y}, possibly due to hybridization with bulk bands, detected upon varying the excitation energy. The coexistence of all the functional properties in addition to the unusual surface state characteristics make this an interesting material.
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Affiliation(s)
- S Thirupathaiah
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - Soumi Ghosh
- Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - Rajveer Jha
- CSIR-National Physical Laboratory, New Delhi 110012, India
| | - E D L Rienks
- Leibniz Institut für Festkörper- und Werkstoffforschung IFW Dresden, D-01171 Dresden, Germany
| | - Kapildeb Dolui
- Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - V V Ravi Kishore
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - B Büchner
- Leibniz Institut für Festkörper- und Werkstoffforschung IFW Dresden, D-01171 Dresden, Germany
| | - Tanmoy Das
- Department of Physics, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - V P S Awana
- CSIR-National Physical Laboratory, New Delhi 110012, India
| | - D D Sarma
- Solid State and Structural Chemistry Unit, Indian Institute of Science, Bangalore, Karnataka 560012, India
| | - J Fink
- Leibniz Institut für Festkörper- und Werkstoffforschung IFW Dresden, D-01171 Dresden, Germany
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Xu H, Liu S, Ding Z, Tan SJ, Yam KM, Bao Y, Nai CT, Ng MF, Lu J, Zhang C, Loh KP. Oscillating edge states in one-dimensional MoS 2 nanowires. Nat Commun 2016; 7:12904. [PMID: 27698478 DOI: 10.1038/ncomms12904] [Citation(s) in RCA: 41] [Impact Index Per Article: 5.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/23/2016] [Accepted: 08/12/2016] [Indexed: 11/30/2022] Open
Abstract
Reducing the dimensionality of transition metal dichalcogenides to one dimension opens it to structural and electronic modulation related to charge density wave and quantum correlation effects arising from edge states. The greater flexibility of a molecular scale nanowire allows a strain-imposing substrate to exert structural and electronic modulation on it, leading to an interplay between the curvature-induced influences and intrinsic ground-state topology. Herein, the templated growth of MoS2 nanowire arrays consisting of the smallest stoichiometric MoS2 building blocks is investigated using scanning tunnelling microscopy and non-contact atomic force microscopy. Our results show that lattice strain imposed on a nanowire causes the energy of the edge states to oscillate periodically along its length in phase with the period of the substrate topographical modulation. This periodic oscillation vanishes when individual MoS2 nanowires join to form a wider nanoribbon, revealing that the strain-induced modulation depends on in-plane rigidity, which increases with system size. Unusual properties arise in transition metal dichalcogenides as dimensionality decreases. Here, the authors introduce a templated growth approach to precisely control the width of MoS2 nanowires on a substrate, allowing them to reveal a relationship between size and electronic properties.
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Abstract
Weak topological phases are usually described in terms of protection by the lattice translation symmetry. Their characterization explicitly relies on periodicity since weak invariants are expressed in terms of the momentum-space torus. We prove the compatibility of weak topological superconductors with aperiodic systems, such as quasicrystals. We go beyond usual descriptions of weak topological phases and introduce a novel, real-space formulation of the weak invariant, based on the Clifford pseudospectrum. A nontrivial value of this index implies a nontrivial bulk phase, which is robust against disorder and hosts localized zero-energy modes at the edge. Our recipe for determining the weak invariant is directly applicable to any finite-sized system, including disordered lattice models. This direct method enables a quantitative analysis of the level of disorder the topological protection can withstand.
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Affiliation(s)
- I C Fulga
- Department of Condensed Matter Physics, Weizmann Institute of Science, Rehovot 76100, Israel
| | - D I Pikulin
- Department of Physics and Astronomy and Quantum Matter Institute, University of British Columbia, Vancouver, British Columbia V6T 1Z1, Canada
| | - T A Loring
- Department of Mathematics and Statistics, University of New Mexico, Albuquerque, New Mexico 87131, USA
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39
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Affiliation(s)
- Huaqing Huang
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
| | - Wenhui Duan
- Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Collaborative Innovation Center of Quantum Matter, Tsinghua University, Beijing 100084, P. R. China
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