Electro-Optical Multiclassification Platform for Minimizing Occasional Inaccuracy in Point-of-Care Biomarker Detection

On-site diagnostic tests that accurately identify disease biomarkers lay the foundation for self-healthcare applications. However, these tests routinely rely on single-mode signals and suffer from insufficient accuracy, especially for multiplexed point-of-care tests (POCTs) within a few minutes. Here, this work develops a dual-mode multiclassification diagnostic platform that integrates an electrochemiluminescence sensor and a field-effect transistor sensor in a microfluidic chip. The microfluidic channel guides the testing samples to flow across electro-optical sensor units, which produce dual-mode readouts by detecting infectious biomarkers of tuberculosis (TB), human rhinovirus (HRV), and group B streptococcus (GBS). Then, machine-learning classifiers generate three-dimensional (3D) hyperplanes to diagnose different diseases. Dual-mode readouts derived from distinct mechanisms enhance the anti-interference ability physically, and machine-learning-aided diagnosis in high-dimensional space reduces the occasional inaccuracy mathematically. Clinical validation studies with 501 unprocessed samples indicate that the platform has an accuracy approaching 99%, higher than the 77%-93% accuracy of rapid point-of-care testing technologies at 100% statistical power (>150 clinical tests). Moreover, the diagnosis time is 5 min without a trade-off of accuracy. This work solves the occasional inaccuracy issue of rapid on-site diagnosis, endowing POCT systems with the same accuracy as laboratory tests and holding unique prospects for complicated scenes of personalized healthcare.

Tunable Spin-Polarized States in Graphene on a Ferrimagnetic Oxide Insulator

Spin-polarized two-dimensional (2D) materials with large and tunable spin-splitting energy promise the field of 2D spintronics. While graphene has been a canonical 2D material, its spin properties and tunability are limited. Here, this work demonstrates the emergence of robust spin-polarization in graphene with large and tunable spin-splitting energy of up to 132 meV at zero applied magnetic fields. The spin polarization is induced through a magnetic exchange interaction between graphene and the underlying ferrimagnetic oxide insulating layer, Tm3 Fe5 O12 , as confirmed by its X-ray magnetic circular dichroism (XMCD). The spin-splitting energies are directly measured and visualized by the shift in their Landau-fan diagram mapped by analyzing the measured Shubnikov-de-Haas (SdH) oscillations as a function of applied electric fields, showing consistent fit with the first-principles and machine learning calculations. Further, the observed spin-splitting energies can be tuned over a broad range between 98 and 166 meV by field cooling. The methods and results are applicable to other 2D (magnetic) materials and heterostructures, and offer great potential for developing next-generation spin logic and memory devices.

Ultra-Fast Single-Nucleotide-Variation Detection Enabled by Argonaute-Mediated Transistor Platform

"Test-and-go" single-nucleotide variation (SNV) detection within several minutes remains challenging, especially in low-abundance samples, since existing methods face a trade-off between sensitivity and testing speed. Sensitive detection usually relies on complex and time-consuming nucleic acid amplification or sequencing. Here, a graphene field-effect transistor (GFET) platform mediated by Argonaute protein that enables rapid, sensitive, and specific SNV detection is developed. The Argonaute protein provides a nanoscale binding channel to preorganize the DNA probe, accelerating target binding and rapidly recognizing SNVs with single-nucleotide resolution in unamplified tumor-associated microRNA, circulating tumor DNA, virus RNA, and reverse transcribed cDNA when a mismatch occurs in the seed region. An integrated microchip simultaneously detects multiple SNVs in agreement with sequencing results within 5 min, achieving the fastest SNV detection in a "test-and-go" manner without the requirement of nucleic acid extraction, reverse transcription, and amplification.

Epitaxial Growth of 2D Binary Phosphides

Combinations of phosphorus with main group III, IV, and V elements are theoretically predicted to generate 2D binary phosphides with extraordinary properties and promising applications. However, experimental synthesis is significantly lacking. Here, a general approach for preparing 2D binary phosphides is reported using single crystalline surfaces containing the constituent element of target 2D materials as the substrate. To validate this, SnP3 and BiP, representing typical 2D binary phosphides, are successfully synthesized on Cu2 Sn and bismuthene, respectively. Scanning tunneling microscopy imaging reveals a hexagonal pattern of SnP3 on Cu2 Sn, while α-BiP can be epitaxially grown on the α-bismuthene domain on Cu2 Sb. First-principles calculations reveal that the formation of SnP3 on Cu2 Sn is associated with strong interface bonding and significant charge transfer, while α-BiP interacts weakly with α-bismuthene so that its semiconducting property is preserved. The study demonstrates an attractive avenue for the atomic-scale growth of binary 2D materials via substrate phase engineering.

A closed-loop catalytic nanoreactor system on a transistor

Precision chemistry demands miniaturized catalytic systems for sophisticated reactions with well-defined pathways. An ideal solution is to construct a nanoreactor system functioning as a chemistry laboratory to execute a full chemical process with molecular precision. However, existing nanoscale catalytic systems fail to in situ control reaction kinetics in a closed-loop manner, lacking the precision toward ultimate reaction efficiency. We find an inter-electrochemical gating effect when operating DNA framework-constructed enzyme cascade nanoreactors on a transistor, enabling in situ closed-loop reaction monitoring and modulation electrically. Therefore, a comprehensive system is developed, encapsulating nanoreactors, analyzers, and modulators, where the gate potential modulates enzyme activity and switches cascade reaction "ON" or "OFF." Such electric field-effect property enhances catalytic efficiency of enzyme by 343.4-fold and enables sensitive sarcosine assay for prostate cancer diagnoses, with a limit of detection five orders of magnitude lower than methodologies in clinical laboratory. By coupling with solid-state electronics, this work provides a perspective to construct intelligent nano-systems for precision chemistry.

Controlled alignment of supermoiré lattice in double-aligned graphene heterostructures

The supermoiré lattice, built by stacking two moiré patterns, provides a platform for creating flat mini-bands and studying electron correlations. An ultimate challenge in assembling a graphene supermoiré lattice is in the deterministic control of its rotational alignment, which is made highly aleatory due to the random nature of the edge chirality and crystal symmetry. Employing the so-called "golden rule of three", here we present an experimental strategy to overcome this challenge and realize the controlled alignment of double-aligned hBN/graphene/hBN supermoiré lattice, where the twist angles between graphene and top/bottom hBN are both close to zero. Remarkably, we find that the crystallographic edge of neighboring graphite can be used to better guide the stacking alignment, as demonstrated by the controlled production of 20 moiré samples with an accuracy better than ~ 0.2°. Finally, we extend our technique to low-angle twisted bilayer graphene and ABC-stacked trilayer graphene, providing a strategy for flat-band engineering in these moiré materials.

Two-dimensional ferroelectricity in a single-element bismuth monolayer

Ferroelectric materials are fascinating for their non-volatile switchable electric polarizations induced by the spontaneous inversion-symmetry breaking. However, in all of the conventional ferroelectric compounds, at least two constituent ions are required to support the polarization switching1,2. Here, we report the observation of a single-element ferroelectric state in a black phosphorus-like bismuth layer3, in which the ordered charge transfer and the regular atom distortion between sublattices happen simultaneously. Instead of a homogenous orbital configuration that ordinarily occurs in elementary substances, we found the Bi atoms in a black phosphorous-like Bi monolayer maintain a weak and anisotropic sp orbital hybridization, giving rise to the inversion-symmetry-broken buckled structure accompanied with charge redistribution in the unit cell. As a result, the in-plane electric polarization emerges in the Bi monolayer. Using the in-plane electric field produced by scanning probe microscopy, ferroelectric switching is further visualized experimentally. Owing to the conjugative locking between the charge transfer and atom displacement, we also observe the anomalous electric potential profile at the 180° tail-to-tail domain wall induced by competition between the electronic structure and electric polarization. This emergent single-element ferroelectricity broadens the mechanism of ferroelectrics and may enrich the applications of ferroelectronics in the future.

Real-Space Investigation of the Multiple Halogen Bonds by Ultrahigh-Resolution Scanning Probe Microscopy

The chemical bond is of central interest in chemistry, and it is of significance to study the nature of intermolecular bonds in real-space. Herein, non-contact atomic force microscopy (nc-AFM) and low-temperature scanning tunneling microscopy (LT-STM) are employed to acquire real-space atomic information of molecular clusters, i.e., monomer, dimer, trimer, tetramer, formed on Au(111). The formation of the various molecular clusters is due to the diversity of halogen bonds. DFT calculation also suggests the formation of three distinct halogen bonds among the molecular clusters, which originates from the noncovalent interactions of Br-atoms with the positive potential H-atoms, neutral potential Br-atoms, and negative potential N-atoms, respectively. This work demonstrates the real-space investigation of the multiple halogen bonds by nc-AFM/LT-STM, indicating the potential use of this technique to study other intermolecular bonds and to understand complex supramolecular assemblies at the atomic/sub-molecular level.

Unravelling strong electronic interlayer and intralayer correlations in a transition metal dichalcogenide

Electronic correlations play important roles in driving exotic phenomena in condensed matter physics. They determine low-energy properties through high-energy bands well-beyond optics. Great effort has been made to understand low-energy excitations such as low-energy excitons in transition metal dichalcogenides (TMDCs), however their high-energy bands and interlayer correlation remain mysteries. Herewith, by measuring temperature- and polarization-dependent complex dielectric and loss functions of bulk molybdenum disulphide from near-infrared to soft X-ray, supported with theoretical calculations, we discover unconventional soft X-ray correlated-plasmons with low-loss, and electronic transitions that reduce dimensionality and increase correlations, accompanied with significantly modified low-energy excitons. At room temperature, interlayer electronic correlations, together with the intralayer correlations in the c-axis, are surprisingly strong, yielding a three-dimensional-like system. Upon cooling, wide-range spectral-weight transfer occurs across a few tens of eV and in-plane p-d hybridizations become enhanced, revealing strong Coulomb correlations and electronic anisotropy, yielding a two-dimensional-like system. Our result shows the importance of strong electronic, interlayer and intralayer correlations in determining electronic structure and opens up applications of utilizing TMDCs on plasmonic nanolithrography.

A Barium Titanate-on-Oxide Insulator Optoelectronics Platform

Electro-optic modulators are among the most important building blocks in optical communication networks. Lithium niobate, for example, has traditionally been widely used to fabricate high-speed optical modulators due to its large Pockels effect. Another material, barium titanate, nominally has a 50 times stronger r-parameter and would ordinarily be a more attractive material choice for such modulators or other applications. In practice, barium titanate thin films for optical waveguide devices are usually grown on magnesium oxide due to its low refractive index, allowing vertical mode confinement. However, the crystal quality is normally degraded. Here, a group of scandate-based substrates with small lattice mismatch and low refractive index compared to that of barium titanate is identified, thus concurrently satisfying high crystal quality and vertical optical mode confinement. This work provides a platform for nonlinear on-chip optoelectronics and can be promising for waveguide-based optical devices such as Mach-Zehnder modulators, wavelength division multiplexing, and quantum optics-on-chip.

Observation of Anisotropic Magnetoresistance in Layered Nonmagnetic Semiconducting PdSe2

Anisotropy in crystals usually has remarkable consequences in two-dimensional (2D) materials, for example, black phosphorus, PdSe₂, and SnS, arising from different lattice periodicities along different crystallographic directions. Electrical anisotropy has been successfully demonstrated in 2D materials, but anisotropic magnetoresistance in 2D materials is rarely studied. Herein, we report anisotropic magnetoresistance in layered nonmagnetic semiconducting PdSe₂ flakes. Anisotropic magnetoresistance along the two crystalline axes under a perpendicular magnetic field is demonstrated, and the magnetoresistance along the a-axis is apparently different from the magnetoresistance along the b-axis. The magnetoresistance can also be flexibly tuned by applying a gate voltage, leveraging the semiconductor properties of PdSe₂. The computed anisotropic electronic density of states and electronic mobility with ab initio density functional calculations support the anisotropic and measured magnetoresistance. Our findings advance the understanding of magnetoresistance in anisotropic transition-metal dichalcogenides and pave the way for potential applications in anisotropic spintronic devices.

Realizing quinary charge states of solitary defects in two-dimensional intermetallic semiconductor

Creating and manipulating multiple charge states of solitary defects in semiconductors is of essential importance for solitary defect electronics, but is fundamentally limited by Coulomb's law. Achieving this objective is challenging, due to the conflicting requirements of the localization necessary for the sizable band gap and delocalization necessary for a low charging energy. Here, using scanning tunneling microscopy/spectroscopy experiments and first-principles calculations, we realized exotic quinary charge states of solitary defects in two-dimensional intermetallic semiconductor Sn2Bi. We also observed an ultralow defect charging energy that increases sublinearly with charge number rather than displaying the usual quadratic behavior. Our work suggests a promising route for constructing multiple defect-charge states by designing intermetallic semiconductors, and opens new opportunities for developing quantum devices with charge-based quantum states.

Modulating Magnetism in Ferroelectric Polymer-Gated Perovskite Manganite Films with Moderate Gate Pulse Chains

Most previous attempts on achieving electric-field manipulation of ferromagnetism in complex oxides, such as La_0.66Sr_0.33MnO₃ (LSMO), are based on electrostatically induced charge carrier changes through high-k dielectrics or ferroelectrics. Here, the use of a ferroelectric copolymer, polyvinylidene fluoride with trifluoroethylene [P(VDF-TrFE)], as a gate dielectric to successfully modulate the ferromagnetism of the LSMO thin film in a field-effect device geometry is demonstrated. Specifically, through the application of low-voltage pulse chains inadequate to switch the electric dipoles of the copolymer, enhanced tunability of the oxide magnetic response is obtained, compared to that induced by ferroelectric polarization. Such observations have been attributed to electric field-induced oxygen vacancy accumulation/depletion in the LSMO layer upon the application of pulse chains, which is supported by surface-sensitive-characterization techniques, including X-ray photoelectron spectroscopy and X-ray magnetic circular dichroism. These techniques not only unveil the electrochemical nature of the mechanism but also establish a direct correlation between the oxygen vacancies created and subsequent changes to the valence states of Mn ions in LSMO. These demonstrations based on the pulsing strategy can be a viable route equally applicable to other functional oxides for the construction of electric field-controlled magnetic devices.

Room-Temperature Colossal Magnetoresistance in Terraced Single-Layer Graphene

Disorder-induced magnetoresistance (MR) effect is quadratic at low perpendicular magnetic fields and linear at high fields. This effect is technologically appealing, especially in 2D materials such as graphene, since it offers potential applications in magnetic sensors with nanoscale spatial resolution. However, it is a great challenge to realize a graphene magnetic sensor based on this effect because of the difficulty in controlling the spatial distribution of disorder and enhancing the MR sensitivity in the single-layer regime. Here, a room-temperature colossal MR of up to 5000% at 9 T is reported in terraced single-layer graphene. By laminating single-layer graphene on a terraced substrate, such as TiO₂ -terminated SrTiO₃ , a universal one order of magnitude enhancement in the MR compared to conventional single-layer graphene devices is demonstrated. Strikingly, a colossal MR of >1000% is also achieved in the terraced graphene even at a high carrier density of ≈10¹² cm^-2 . Systematic studies of the MR of single-layer graphene on various oxide- and non-oxide-based terraced surfaces demonstrate that the terraced structure is the dominant factor driving the MR enhancement. The results open a new route for tailoring the physical property of 2D materials by engineering the strain through a terraced substrate.

Catalyst-Free Growth of Two-Dimensional BCxN Materials on Dielectrics by Temperature-Dependent Plasma-Enhanced Chemical Vapor Deposition

Traditional methods to prepare two-dimensional (2D) B-C-N ternary materials (BC_xN), such as chemical vapor deposition (CVD), require sophisticated experimental conditions such as high temperature, delicate control of precursors, and postgrowth transfer from catalytic substrates, and the products are generally thick or bulky films without the atomically mixed phase of B-C-N, hampering practical applications of these materials. Here, for the first time, we develop a temperature-dependent plasma-enhanced chemical vapor deposition (PECVD) method to grow 2D BC_xN materials directly on noncatalytic dielectrics at low temperature with high controllability. The C, N, and B compositions can be tuned by simply changing the growth temperature. Thus, the properties of the as-made materials including band gap and conductivity are modulated, which is hardly achieved by other methods. A 2D hybridized BC₂N film with a mixed BC₂N phase is produced, for the first time, with a band gap of about 2.3 eV. The growth temperature is 580-620 °C, much lower than that of traditional catalytic CVD for growing BC_xN. The product has a p-type conducting property and can be directly applied in field-effect transistors and sensors without postgrowth transfer, showing great promise for this method in future applications.

The effect of moiré superstructures on topological edge states in twisted bismuthene homojunctions

Creating and controlling the topological properties of two-dimensional topological insulators is essential for spintronic device applications. Here, we report the successful growth of bismuth homostructure consisting of monolayer bismuthene and single-layer black phosphorus-like Bi (BP-Bi) on the HOPG surface. Combining scanning tunneling microscopy/spectroscopy with noncontact atomic force microscopy, moiré superstructures with twist angles in the bismuth homostructure and the modulation of topological edge states of bismuthene were observed and studied. First-principles calculations reproduced the moiré superlattice and indicated that the structure fluctuation is ascribed to the stacking modes between bismuthene and BP-Bi, which induce spatially distributed interface interactions in the bismuth homostructure. The modulation of topological edge states is directly related to the variation of interlayer interactions. Our results suggest a promising pathway to tailor the topological states through interfacial interactions.

Atomic-Scale Metal-Insulator Transition in SrRuO3 Ultrathin Films Triggered by Surface Termination Conversion

The metal-insulator transition (MIT) in transition-metal-oxide is fertile ground for exploring intriguing physics and potential device applications. Here, an atomic-scale MIT triggered by surface termination conversion in SrRuO₃ ultrathin films is reported. Uniform and effective termination engineering at the SrRuO₃ (001) surface can be realized via a self-limiting water-leaching process. As the surface termination converts from SrO to RuO₂ , a highly insulating and nonferromagnetic phase emerges within the topmost SrRuO₃ monolayer. Such a spatially confined MIT is corroborated by systematic characterizations on electrical transport, magnetism, and scanning tunneling spectroscopy. Density functional theory calculations and X-ray linear dichroism further suggest that the surface termination conversion breaks the local octahedral symmetry of the crystal field. The resultant modulation in 4d orbital occupancy stabilizes a nonferromagnetic insulating surface state. This work introduces a new paradigm to stimulate and tune exotic functionalities of oxide heterostructures with atomic precision.

Electronic Modulation in Site-Selective Occupation of Quasi-2D Triangular-Lattice Cs2CuCl4-xBrx Perovskite Probed by Surface-Sensitive Characterization

A controllable electronic manipulation in a frustrated magnetic system such as solution-based two-dimensional (2D) all-inorganic perovskites offers a possible route for their integrations with electronic and magnetic devices for their advanced applications. Here, we perform element-specific investigations of an emergent class of quasi-2D all-inorganic perovskites Cs₂CuCl_4-xBr_x with (0 ≤ x ≤ 4) using a combination of synchrotron-radiation photoelectron techniques. Surface- and element-sensitive X-ray absorption spectroscopy spectra of Cu L_2,3 edges indicate strong electronic transition that is largely influenced by their halogen content at room temperature. This implies that site-selective occupation largely dominates the electronic transition across the unoccupied states of these series since chlorine atoms possess a stronger electronegative character than bromine atoms. Moreover, the implication of halogen site is reflected in the valence band of Cl-rich copper perovskite in which the valence band edge is closer to Fermi energy (E_F) than that of the Br-rich compound. Furthermore, X-ray magnetic circular dichroism spectra of mixed ratio and Br-rich compounds exhibit antiferromagnetism at room temperature. These site-specific magnetic-spectroscopic results are corroborated by density functional theory calculations. The strong electronic modulation and the local magnetic spectroscopy results in these solution-based and low-temperature-growth materials will pave the way toward energy- and cost-efficient perovskite devices.

Structuring Nonlinear Wavefront Emitted from Monolayer Transition-Metal Dichalcogenides

The growing demand for tailored nonlinearity calls for a structure with unusual phase discontinuity that allows the realization of nonlinear optical chirality, holographic imaging, and nonlinear wavefront control. Transition-metal dichalcogenide (TMDC) monolayers offer giant optical nonlinearity within a few-angstrom thickness, but limitations in optical absorption and domain size impose restriction on wavefront control of nonlinear emissions using classical light sources. In contrast, noble metal-based plasmonic nanosieves support giant field enhancements and precise nonlinear phase control, with hundred-nanometer pixel-level resolution; however, they suffer from intrinsically weak nonlinear susceptibility. Here, we report a multifunctional nonlinear interface by integrating TMDC monolayers with plasmonic nanosieves, yielding drastically different nonlinear functionalities that cannot be accessed by either constituent. Such a hybrid nonlinear interface allows second-harmonic (SH) orbital angular momentum (OAM) generation, beam steering, versatile polarization control, and holograms, with an effective SH nonlinearity χ ⁽²⁾ of ~25 nm/V. This designer platform synergizes the TMDC monolayer and plasmonic nanosieves to empower tunable geometric phases and large field enhancement, paving the way toward multifunctional and ultracompact nonlinear optical devices.

Two-dimensional ferromagnetic superlattices

Mechanically exfoliated two-dimensional ferromagnetic materials (2D FMs) possess long-range ferromagnetic order and topologically nontrivial skyrmions in few layers. However, because of the dimensionality effect, such few-layer systems usually exhibit much lower Curie temperature (T_C) compared to their bulk counterparts. It is therefore of great interest to explore effective approaches to enhance their T_C, particularly in wafer-scale for practical applications. Here, we report an interfacial proximity-induced high-T_C 2D FM Fe₃GeTe₂ (FGT) via A-type antiferromagnetic material CrSb (CS) which strongly couples to FGT. A superlattice structure of (FGT/CS)_n, where n stands for the period of FGT/CS heterostructure, has been successfully produced with sharp interfaces by molecular-beam epitaxy on 2-inch wafers. By performing elemental specific X-ray magnetic circular dichroism (XMCD) measurements, we have unequivocally discovered that T_C of 4-layer Fe₃GeTe₂ can be significantly enhanced from 140 K to 230 K because of the interfacial ferromagnetic coupling. Meanwhile, an inverse proximity effect occurs in the FGT/CS interface, driving the interfacial antiferromagnetic CrSb into a ferrimagnetic state as evidenced by double-switching behavior in hysteresis loops and the XMCD spectra. Density functional theory calculations show that the Fe-Te/Cr-Sb interface is strongly FM coupled and doping of the spin-polarized electrons by the interfacial Cr layer gives rise to the T_C enhancement of the Fe₃GeTe₂ films, in accordance with our XMCD measurements. Strikingly, by introducing rich Fe in a 4-layer FGT/CS superlattice, T_C can be further enhanced to near room temperature. Our results provide a feasible approach for enhancing the magnetic order of few-layer 2D FMs in wafer-scale and render opportunities for realizing realistic ultra-thin spintronic devices.

Selective self-assembly of 2,3-diaminophenazine molecules on MoSe2 mirror twin boundaries

The control of the density and type of line defects on two-dimensional (2D) materials enable the development of new methods to tailor their physical and chemical properties. In particular, mirror twin boundaries (MTBs) on transition metal dichacogenides have attracted much interest due to their metallic state with charge density wave transition and spin-charge separation property. In this work, we demonstrate the self-assembly of 2,3-diaminophenazine (DAP) molecule porous structure with alternate L-type and T-type aggregated configurations on the MoSe2 hexagonal wagon-wheel pattern surface. This site-specific molecular self-assembly is attributed to the more chemically reactive metallic MTBs compared to the pristine semiconducting MoSe2 domains. First-principles calculations reveal that the active MTBs couple with amino groups in the DAP molecules facilitating the DAP assembly. Our results demonstrate the site-dependent electronic and chemical properties of MoSe2 monolayers, which can be exploited as a natural template to create ordered nanostructures.

High-Performance, Room Temperature, Ultra-Broadband Photodetectors Based on Air-Stable PdSe2

Photodetection over a broad spectral range is crucial for optoelectronic applications such as sensing, imaging, and communication. Herein, a high-performance ultra-broadband photodetector based on PdSe₂ with unique pentagonal atomic structure is reported. The photodetector responds from visible to mid-infrared range (up to ≈4.05 µm), and operates stably in ambient and at room temperature. It promises improved applications compared to conventional mid-infrared photodetectors. The highest responsivity and external quantum efficiency achieved are 708 A W^-1 and 82 700%, respectively, at the wavelength of 1064 nm. Efficient optical absorption beyond 8 µm is observed, indicating that the photodetection range can extend to longer than 4.05 µm. Owing to the low crystalline symmetry of layered PdSe₂ , anisotropic properties of the photodetectors are observed. This emerging material shows potential for future infrared optoelectronics and novel devices in which anisotropic properties are desirable.

Evidence of Spin Frustration in a Vanadium Diselenide Monolayer Magnet

Monolayer VSe₂ , featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic 2D transition-metal dichalcogenides (2D-TMDs). Herein, by means of in situ microscopy and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d¹ electronic configuration in monolayer VSe₂ grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe₂ as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.

Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation

Relatively low mobility and thermal conductance create challenges for application of tungsten diselenide (WSe₂) in high performance devices. Dielectric interface is of extremely importance for improving carrier transport and heat spreading in a semiconductor device. Here, by near-equilibrium plasma-enhanced chemical vapour deposition, we realize catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride (2D-BN) with domains around 20~ 200 nm directly on SiO₂/Si, quartz, sapphire, silicon or SiO₂/Si with three-dimensional patterns at 300 °C. Owing to the atomically-clean van-der-Walls conformal interface and the fact that 2D-BN can better bridge the vibrational spectrum across the interface and protect interfacial heat conduction against substrate roughness, both improved performance and thermal dissipation of WSe₂ field-effect transistor are realized with mobility around 56~ 121 cm² V⁻¹ s⁻¹ and saturated power intensity up to 4.23 × 10³ W cm⁻². Owing to its simplicity, conformal growth on three-dimensional surface, compatibility with microelectronic process, it has potential for application in future two-dimensional electronics.

Plasma-enhanced chemical vapour deposition (PECVD) is an industrially compatible microelectronics technology. Here, the authors use PECVD to obtain low-temperature, catalyst-free growth of poly-crystalline two-dimensional hexagonal-boron nitride, thus enabling superior thermal dissipation in WSe₂ field-effect transistors with mobility up to 121 cm² V⁻¹ s⁻¹.

Mechanical Strain Manipulation of Exchange Bias Field and Spin Dynamics in FeCo/IrMn Multilayers Grown on Flexible Substrates

As a key effect in spintronic devices, exchange bias has attracted tremendous attention. Various approaches have been attempted for optimizing this effect, among which the application of strain in flexible exchange-biased systems is promising, but little significant improvement has been reported. Here, we demonstrate encouraging progress in this field. With a pure mechanical compressive strain of -6.26‰ applied to the flexible polyimide (PI) substrate, distinct enhancement of ∼900% in the bias field (from 20 to 200 Oe) is achieved for the exchange-biased (FeCo/IrMn)₃/Ta multilayers grown on top of a flexible PI substrate, accompanied by a notable decrease in the Gilbert damping parameter from 0.02 to 0.008, signifying an improved exchange bias effect as well as a potentially reduced switching current density. The underlying mechanism is investigated by a systematic ferromagnetic resonance study, suggesting that the angle between the unidirectional and uniaxial magnetic easy axes plays an important role, which may be controlled by adjusting the layer number. This work offers an efficient strategy for tuning the exchange bias effect via applying appropriate mechanical strain on a multiperiodic exchange bias multilayered system, opening up an avenue for tailoring the magnetic properties of flexible spintronic devices.

Oxygen Electromigration and Energy Band Reconstruction Induced by Electrolyte Field Effect at Oxide Interfaces

Electrolyte gating is a powerful means for tuning the carrier density and exploring the resultant modulation of novel properties on solid surfaces. However, the mechanism, especially its effect on the oxygen migration and electrostatic charging at the oxide heterostructures, is still unclear. Here we explore the electrolyte gating on oxygen-deficient interfaces between SrTiO_{3} (STO) crystals and LaAlO_{3} (LAO) overlayer through the measurements of electrical transport, x-ray absorption spectroscopy, and photoluminescence spectra. We found that oxygen vacancies (O_{vac}) were filled selectively and irreversibly after gating due to oxygen electromigration at the amorphous LAO/STO interface, resulting in a reconstruction of its interfacial band structure. Because of the filling of O_{vac}, the amorphous interface also showed an enhanced electron mobility and quantum oscillation of the conductance. Further, the filling effect could be controlled by the degree of the crystallinity of the LAO overlayer by varying the growth temperatures. Our results reveal the different effects induced by electrolyte gating, providing further clues to understand the mechanism of electrolyte gating on buried interfaces and also opening a new avenue for constructing high-mobility oxide interfaces.

Vapour-liquid-solid growth of monolayer MoS2 nanoribbons

Chemical vapour deposition of two-dimensional materials typically involves the conversion of vapour precursors to solid products in a vapour-solid-solid mode. Here, we report the vapour-liquid-solid growth of monolayer MoS₂, yielding highly crystalline ribbons with a width of few tens to thousands of nanometres. This vapour-liquid-solid growth is triggered by the reaction between MoO₃ and NaCl, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS₂ ribbons in the 'crawling mode' when saturated with sulfur. The locally well-defined orientations of the ribbons reveal the regular horizontal motion of the droplets during growth. Using atomic-resolution scanning transmission electron microscopy and second harmonic generation microscopy, we show that the ribbons are grown homoepitaxially on monolayer MoS₂ with predominantly 2H- or 3R-type stacking. Our findings highlight the prospects for the controlled growth of atomically thin nanostructure arrays for nanoelectronic devices and the development of unique mixed-dimensional structures.

Atmospheric Pressure Fabrication of Large-Sized Single-Layer Rectangular SnSe Flakes

Tin selenide (SnSe) belongs to the family of layered metal chalcogenide materials with a buckled structure like phosphorene, and has shown potential for applications in two-dimensional nanoelectronics devices. Although many methods to synthesize SnSe nanocrystals have been developed, a simple way to fabricate large-sized single-layer SnSe flakes remains a great challenge. Herein, we show the experimental method to directly grow large-sized single-layer rectangular SnSe flakes on commonly used SiO2/Si insulating substrates using a straightforward two-step fabrication method in an atmospheric pressure quartz tube furnace system. The single-layer rectangular SnSe flakes with an average thickness of ~6.8 Å and lateral dimensions of about 30 µm × 50 µm were fabricated by a combination of vapor transport deposition technique and nitrogen etching route. We characterized the morphology, microstructure, and electrical properties of the rectangular SnSe flakes and obtained excellent crystallinity and good electronic properties. This article about the two-step fabrication method can help researchers grow other similar two-dimensional, large-sized, single-layer materials using an atmospheric pressure system.

Electronic Properties of a 1D Intrinsic/p-Doped Heterojunction in a 2D Transition Metal Dichalcogenide Semiconductor

Two-dimensional (2D) semiconductors offer a convenient platform to study 2D physics, for example, to understand doping in an atomically thin semiconductor. Here, we demonstrate the fabrication and unravel the electronic properties of a lateral doped/intrinsic heterojunction in a single-layer (SL) tungsten diselenide (WSe₂), a prototype semiconducting transition metal dichalcogenide (TMD), partially covered with a molecular acceptor layer, on a graphite substrate. With combined experiments and theoretical modeling, we reveal the fundamental acceptor-induced p-doping mechanism for SL-WSe₂. At the 1D border between the doped and undoped SL-WSe₂ regions, we observe band bending and explain it by Thomas-Fermi screening. Using atomically resolved scanning tunneling microscopy and spectroscopy, the screening length is determined to be in the few nanometer range, and we assess the carrier density of intrinsic SL-WSe₂. These findings are of fundamental and technological importance for understanding and employing surface doping, for example, in designing lateral organic TMD heterostructures for future devices.

Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications

Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.

Use of Single-Layer g-C3N4/Ag Hybrids for Surface-Enhanced Raman Scattering (SERS)

Surface-enhanced Raman scattering (SERS) substrates with high activity and stability are desirable for SERS sensing. Here, we report a new single atomic layer graphitic-C3N4 (S-g-C3N4) and Ag nanoparticles (NPs) hybrid as high-performance SERS substrates. The SERS mechanism of the highly stable S-g-C3N4/Ag substrates was systematically investigated by a combination of experiments and theoretical calculations. From the results of XPS and Raman spectroscopies, it was found that there was a strong interaction between S-g-C3N4 and Ag NPs, which facilitates the uniform distribution of Ag NPs over the edges and surfaces of S-g-C3N4 nanosheets, and induces a charge transfer from S-g-C3N4 to the oxidizing agent through the silver surface, ultimately protecting Ag NPs from oxidation. Based on the theoretical calculations, we found that the net surface charge of the Ag atoms on the S-g-C3N4/Ag substrates was positive and the Ag NPs presented high dispersibility, suggesting that the Ag atoms on the S-g-C3N4/Ag substrates were not likely to be oxidized, thereby ensuring the high stability of the S-g-C3N4/Ag substrate. An understanding of the stability mechanism in this system can be helpful for developing other effective SERS substrates with long-term stability.

The surface electronic structure of silicon terminated (100) diamond

A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.

Competition between Hexagonal and Tetragonal Hexabromobenzene Packing on Au(111)

Low-temperature scanning tunneling microscope investigations reveal that hexabromobenzene (HBB) molecules arrange in either hexagonally closely packed (hcp) [Formula: see text] or tetragonal [Formula: see text] structure on Au(111) dependent on a small substrate temperature difference around 300 K. The underlying mechanism is investigated by density functional theory calculations, which reveal that substrate-mediated intermolecular noncovalent C-Br···Br-C attractions induce hcp HBB islands, keeping the well-known Au(111)-22×√3 reconstruction intact. Upon deposition at 330 K, HBB molecules trap freely diffusing Au adatoms to form tetragonal islands. This enhances the attraction between HBB and Au(111) but partially reduces the intermolecular C-Br···Br-C attractions, altering the Au(111)-22×√3 reconstruction. In both cases, the HBB molecule adsorbs on a bridge site, forming a ∼15° angle between the C-Br direction and [112̅]Au, indicating the site-specific molecule-substrate interactions. We show that the competition between intermolecular and molecule-substrate interactions determines molecule packing at the subnanometer scale, which will be helpful for crystal engineering, functional materials, and organic electronics.

Heterointerface Screening Effects between Organic Monolayers and Monolayer Transition Metal Dichalcogenides

The nature and extent of electronic screening at heterointerfaces and their consequences on energy level alignment are of profound importance in numerous applications, such as solar cells, electronics etc. The increasing availability of two-dimensional (2D) transition metal dichalcogenides (TMDs) brings additional opportunities for them to be used as interlayers in "van der Waals (vdW) heterostructures" and organic/inorganic flexible devices. These innovations raise the question of the extent to which the 2D TMDs participate actively in dielectric screening at the interface. Here we study perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) monolayers adsorbed on single-layer tungsten diselenide (WSe2), bare graphite, and Au(111) surfaces, revealing a strong dependence of the PTCDA HOMO-LUMO gap on the electronic screening effects from the substrate. The monolayer WSe2 interlayer provides substantial, but not complete, screening at the organic/inorganic interface. Our results lay a foundation for the exploitation of the complex interfacial properties of hybrid systems based on TMD materials.

Anomalous spectral features of a neutral bilayer graphene

Graphene and its bilayer are two-dimensional systems predicted to show exciting many-body effects near the neutrality point. The ideal tool to investigate spectrum reconstruction effects is angle-resolved photoemission spectroscopy (ARPES) as it probes directly the band structure with information about both energy and momentum. Here we reveal, by studying undoped exfoliated bilayer graphene with ARPES, two essential aspects of its many-body physics: the electron-phonon scattering rate has an anisotropic k-dependence and the type of electronic liquid is non-Fermi liquid. The latter behavior is evident from an observed electron-electron scattering rate that scales linearly with energy from 100 meV to 600 meV and that is associated with the proximity of bilayer graphene to a two-dimensional quantum critical point of competing orders.

Rational design of two-dimensional molecular donor-acceptor nanostructure arrays

The construction of long-range ordered organic donor-acceptor nanostructure arrays over microscopic areas supported on solid substrates is one of the most challenging tasks towards the realization of molecular nanodevices. They can also be used as ideal model systems to understand light induced charge transfer, charge separation and energy conversion processes and mechanisms at the nanometer scale. The aim of this paper is to highlight recent advances and progress in this topic. Special attention is given to two different strategies for the construction of organic donor-acceptor nanostructure arrays, namely (i) molecular self-assembly on artificially patterned or pre-defined molecular surface nanotemplates and (ii) molecular nanostructure formation steered via directional and selective intermolecular interactions. The interfacial charge transfer and the energy level alignment of these donor-acceptor nanostructures are also discussed.

Optimized growth of graphene on SiC: from the dynamic flip mechanism

Thermal decomposition of single-crystal SiC is one of the popular methods for growing graphene. However, the mechanism of graphene formation on the SiC surface is poorly understood, and the application of this method is also hampered by its high growth temperature. In this study, based on the ab initio calculations, we propose a vacancy assisted Si-C bond flipping model for the dynamic process of graphene growth on SiC. The fact that the critical stages during growth take place at different energy costs allows us to propose an energetic-beam controlled growth method that not only significantly lowers the growth temperature but also makes it possible to grow high-quality graphene with the desired size and patterns directly on the SiC substrate.

Low temperature critical growth of high quality nitrogen doped graphene on dielectrics by plasma-enhanced chemical vapor deposition

Nitrogen doping is one of the most promising routes to modulate the electronic characteristic of graphene. Plasma-enhanced chemical vapor deposition (PECVD) enables low-temperature graphene growth. However, PECVD growth of nitrogen doped graphene (NG) usually requires metal-catalysts, and to the best of our knowledge, only amorphous carbon-nitrogen films have been produced on dielectric surfaces by metal-free PECVD. Here, a critical factor for metal-free PECVD growth of NG is reported, which allows high quality NG crystals to be grown directly on dielectrics like SiO2/Si, Al2O3, h-BN, mica at 435 °C without a catalyst. Thus, the processes needed for loading the samples on dielectrics and n-type doping are realized in a simple PECVD, which would be of significance for future graphene electronics due to its compatibility with the current microelectronic processes.

Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

Role of metal contacts in high-performance phototransistors based on WSe2 monolayers

Phototransistors based on monolayer transition metal dichalcogenides (TMD) have high photosensitivity due to their direct band gap transition. However, there is a lack of understanding of the effect of metal contacts on the performance of atomically thin TMD phototransistors. Here, we fabricate phototransistors based on large-area chemical vapor deposition (CVD) tungsten diselenide (WSe2) monolayers contacted with the metals of different work function values. We found that the low Schottky-contact WSe2 phototransistors exhibit a very high photo gain (10(5)) and specific detectivity (10(14)Jones), values higher than commercial Si- and InGaAs-based photodetectors; however, the response speed is longer than 5 s in ambient air. In contrast, the high Schottky-contact phototransistors display a fast response time shorter than 23 ms, but the photo gain and specific detectivity decrease by several orders of magnitude. Moreover, the fast response speed of the high Schottky-contact devices is maintained for a few months in ambient air. This study demonstrates that the contact plays an important role in TMD phototransistors, and barrier height tuning is critical for optimizing the photoresponse and photoresponsivity.

Electron-doping-enhanced trion formation in monolayer molybdenum disulfide functionalized with cesium carbonate

We report effective and stable electron doping of monolayer molybdenum disulfide (MoS2) by cesium carbonate (Cs2CO3) surface functionalization. The electron charge carrier concentration in exfoliated monolayer MoS2 can be increased by about 9 times after Cs2CO3 functionalization. The n-type doping effect was evaluated by in situ transport measurements of MoS2 field-effect transistors (FETs) and further corroborated by in situ ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and Raman scattering measurements. The electron doping enhances the formation of negative trions (i.e., a quasiparticle comprising two electrons and one hole) in monolayer MoS2 under light irradiation and significantly reduces the charge recombination of photoexcited electron-hole pairs. This results in large photoluminescence suppression and an obvious photocurrent enhancement in monolayer MoS2 FETs.

Energy level realignment in weakly interacting donor-acceptor binary molecular networks

Understanding the effect of intermolecular and molecule-substrate interactions on molecular electronic states is key to revealing the energy level alignment mechanism at organic-organic heterojunctions or organic-inorganic interfaces. In this paper, we investigate the energy level alignment mechanism in weakly interacting donor-acceptor binary molecular superstructures, comprising copper hexadecafluorophthalocyanine (F16CuPc) intermixed with copper phthalocyanine (CuPc), or manganese phthalocynine (MnPc) on graphite. The molecular electronic structures have been systematically studied by in situ ultraviolet photoelectron spectroscopy (UPS) and low-temperature scanning tunneling microscopy/spectroscopy (LT-STM/STS) experiments and corroborated by density functional theory (DFT) calculations. As demonstrated by the UPS and LT-STM/STS measurements, the observed unusual energy level realignment (i.e., a large downward shift in donor HOMO level and a corresponding small upward shift in acceptor HOMO level) in the CuPc-F16CuPc binary superstructures originates from the balance between intermolecular and molecule-substrate interactions. The enhanced intermolecular interactions through the hydrogen bonding between neighboring CuPc and F16CuPc can stabilize the binary superstructures and modify the local molecular electronic states. The obvious molecular energy level shift was explained by gap-state-mediated interfacial charge transfer.

Incorporating isolated molybdenum (Mo) atoms into bilayer epitaxial graphene on 4H-SiC(0001)

The atomic structures and electronic properties of isolated Mo atoms in bilayer epitaxial graphene (BLEG) on 4H-SiC(0001) are investigated by low temperature scanning tunneling microscopy (LT-STM). LT-STM results reveal that isolated Mo dopants prefer to substitute C atoms at α-sites and preferentially locate between the graphene bilayers. First-principles calculations confirm that the embedding of single Mo dopants within BLEG is energetically favorable as compared to monolayer graphene. The calculated band structures show that Mo-incorporated BLEG is n-doped, and each Mo atom introduces a local magnetic moment of 1.81 μB into BLEG. Our findings demonstrate a simple and stable method to incorporate single transition metal dopants into the graphene lattice to tune its electronic and magnetic properties for possible use in graphene spin devices.