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Moody MJ, Paul JT, Smeets PJM, Dos Reis R, Kim JS, Mead CE, Gish JT, Hersam MC, Chan MKY, Lauhon LJ. van der Waals Epitaxy, Superlubricity, and Polarization of the 2D Ferroelectric SnS. ACS Appl Mater Interfaces 2023; 15:56150-56157. [PMID: 38011316 DOI: 10.1021/acsami.3c11931] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/29/2023]
Abstract
Tin monosulfide (SnS) is a two-dimensional layered semiconductor that exhibits in-plane ferroelectric order at very small thicknesses and is of interest in highly scaled devices. Here we report the epitaxial growth of SnS on hexagonal boron nitride (hBN) using a pulsed metal-organic chemical vapor deposition process. Lattice matching is observed between the SnS(100) and hBN{11̅0} planes, with no evidence of strain. Atomic force microscopy reveals superlubricity along the commensurate direction of the SnS/hBN interface, and first-principles calculations suggest that friction is controlled by the edges of the SnS islands, rather than interface interactions. Differential phase contrast imaging detects remnant polarization in SnS islands with domains that are not dictated by step-edges in the SnS. The growth of ferroelectric SnS on high quality hBN substrates is a promising step toward electrically switchable ferroelectric semiconducting devices.
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Affiliation(s)
- Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joshua T Paul
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Paul J M Smeets
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Roberto Dos Reis
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Christopher E Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jonathan Tyler Gish
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Maria K Y Chan
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute of Science and Engineering, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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2
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Guo H, Mead C, Balingit M, Shah S, Wang X, Xu M, Tran I, Aoki T, Samaniego JD, Abdul-Aziz KL, Lauhon LJ, Bowman WJ. A Correlated STEM/APT Study of Multidimensional and Interconnected Multi-element Nanostructures Derived from a Complex Concentrated Oxide. Microsc Microanal 2023; 29:1833. [PMID: 37613934 DOI: 10.1093/micmic/ozad067.948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/25/2023]
Affiliation(s)
- Huiming Guo
- Department of Materials Science and Engineering, University of California Irvine, Irvine, California, United States
| | - Christopher Mead
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Marquez Balingit
- Department of Materials Science and Engineering, University of California Irvine, Irvine, California, United States
| | - Soham Shah
- Department of Chemical and Environmental Engineering, University of California Riverside, Riverside, California, United States
| | - Xin Wang
- Department of Materials Science and Engineering, University of California Irvine, Irvine, California, United States
| | - Mingjie Xu
- Irvine Materials Research Institute (IMRI), University of California Irvine, Irvine, California, United States
| | - Ich Tran
- Irvine Materials Research Institute (IMRI), University of California Irvine, Irvine, California, United States
| | - Toshihiro Aoki
- Irvine Materials Research Institute (IMRI), University of California Irvine, Irvine, California, United States
| | - Jack D Samaniego
- Department of Materials Science and Engineering, University of California Irvine, Irvine, California, United States
| | - Kandis Leslie Abdul-Aziz
- Department of Chemical and Environmental Engineering, University of California Riverside, Riverside, California, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - William J Bowman
- Department of Materials Science and Engineering, University of California Irvine, Irvine, California, United States
- Irvine Materials Research Institute (IMRI), University of California Irvine, Irvine, California, United States
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3
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Huang C, Dede D, Morgan N, Piazza V, Hu X, Fontcuberta I Morral A, Lauhon LJ. Trapping Layers Prevent Dopant Segregation and Enable Remote Doping of Templated Self-Assembled InGaAs Nanowires. Nano Lett 2023. [PMID: 37402180 PMCID: PMC10375592 DOI: 10.1021/acs.nanolett.3c00281] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/06/2023]
Abstract
Selective area epitaxy is a promising approach to define nanowire networks for topological quantum computing. However, it is challenging to concurrently engineer nanowire morphology, for carrier confinement, and precision doping, to tune carrier density. We report a strategy to promote Si dopant incorporation and suppress dopant diffusion in remote doped InGaAs nanowires templated by GaAs nanomembrane networks. Growth of a dilute AlGaAs layer following doping of the GaAs nanomembrane induces incorporation of Si that otherwise segregates to the growth surface, enabling precise control of the spacing between the Si donors and the undoped InGaAs channel; a simple model captures the influence of Al on the Si incorporation rate. Finite element modeling confirms that a high electron density is produced in the channel.
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Affiliation(s)
- Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Didem Dede
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Nicholas Morgan
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Valerio Piazza
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Xiaobing Hu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Anna Fontcuberta I Morral
- Laboratory of Semiconductor Materials, Institute of Materials, EPFL, Route Cantonale, Lausanne, Vaud 1015, Switzerland
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
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4
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Mead C, Huang C, Isik Goktas N, Fiordaliso EM, LaPierre RR, Lauhon LJ. Detection of be dopant pairing in VLS grown GaAs nanowires with twinning superlattices. Nanotechnology 2023. [PMID: 37321202 DOI: 10.1088/1361-6528/acde84] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Control over the distribution of dopants in nanowires is essential for regulating their electronic properties, but perturbations in nanowire microstructure may affect doping. Conversely, dopants may be used to control nanowire microstructure including the generation of twinning superlattices (TSLs) - periodic arrays of twin planes. Here the spatial distribution of Be dopants in a GaAs nanowire with a TSL is investigated using atom probe tomography (APT). Homogeneous dopant distributions in both the radial and axial directions are observed, indicating a decoupling of the dopant distribution from the nanowire microstructure. Although the dopant distribution is microscopically homogenous, radial distribution function analysis discovered that 1% of the Be atoms occur in substitutional-interstitial pairs. The pairing confirms theoretical predictions based on the low defect formation energy. These findings indicate that using dopants to engineer microstructure does not necessarily imply that the dopant distribution is non-uniform.
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Affiliation(s)
- Christopher Mead
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA, Evanston, Illinois, 60208, UNITED STATES
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA, Evanston, Illinois, 60208, UNITED STATES
| | - Nebile Isik Goktas
- Engineering Physics, McMaster University, Department of Engineering Physics, Hamilton, Ontario, L8S4L7, CANADA
| | - Elisabetta Maria Fiordaliso
- Center for Electron Microscopy, Technical University of Denmark, Ørsteds Plads - Bygning 347, Lyngby, Hovedstaden, 2800, DENMARK
| | - Ray R LaPierre
- Department of Engineering Physics, McMaster University, 1280 Main Street West, Room JHE A315, Hamilton, Ontario, L8S4L7, CANADA
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA, Evanston, Illinois, 60208, UNITED STATES
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5
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Zhu Z, Kim JS, Moody MJ, Lauhon LJ. Edge and Interface Resistances Create Distinct Trade-Offs When Optimizing the Microstructure of Printed van der Waals Thin-Film Transistors. ACS Nano 2023; 17:575-586. [PMID: 36573755 DOI: 10.1021/acsnano.2c09527] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Inks based on two-dimensional (2D) materials could be used to tune the properties of printed electronics while maintaining compatibility with scalable manufacturing processes. However, a very wide range of performances have been reported in printed thin-film transistors in which the 2D channel material exhibits considerable variation in microstructure. The lack of quantitative physics-based relationships between film microstructure and transistor performance limits the codesign of exfoliation, sorting, and printing processes to inefficient empirical approaches. To rationally guide the development of 2D inks and related processing, we report a gate-dependent resistor network model that establishes distinct microstructure-performance relationships created by near-edge and intersheet resistances in printed van der Waals thin-film transistors. The model is calibrated by analyzing electrical output characteristics of model transistors consisting of overlapping 2D nanosheets with varied thicknesses that are mechanically exfoliated and transferred. Kelvin probe force microscopy analysis on the model transistors leads to the discovery that the nanosheet edges, not the intersheet resistance, limit transport due to their impact on charge carrier depletion and scattering. Our model suggests that when transport in a 2D material network is limited by the near-edge resistance, the optimum nanosheet thickness is dictated by a trade-off between charged impurity screening and gate screening, and the film mobilities are more sensitive to variations in printed nanosheet density. Removal of edge states can enable the realization of higher mobilities with thinner nanosheets due to reduced junction resistances and reduced gate screening. Our analysis of the influence of nanosheet edges on the effective film mobility not only examines the prospects of extant exfoliation methods to achieve the optimum microstructure but also provides important perspectives on processes that are essential to maximizing printed film performance.
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Affiliation(s)
- Zhehao Zhu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Joon-Seok Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
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6
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Hill MO, Schmiedeke P, Huang C, Maddali S, Hu X, Hruszkewycz SO, Finley JJ, Koblmüller G, Lauhon LJ. 3D Bragg Coherent Diffraction Imaging of Extended Nanowires: Defect Formation in Highly Strained InGaAs Quantum Wells. ACS Nano 2022; 16:20281-20293. [PMID: 36378999 DOI: 10.1021/acsnano.2c06071] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In0.2Ga0.8As quantum wells of distinct thicknesses on different facets of the same nanowire, we identified the critical thickness at which defects are nucleated. A correlation with a traditional transmission electron microscopy analysis confirms that BCDI can image the extended structure of defects. Finite element simulations of electron and hole states explain the emission characteristics arising from strained and partially relaxed regions. This approach, imaging the 3D strain and microstructure of intact nanowire core-shell structures with application-relevant dimensions, can aid the development of predictive models that enable the design of new compact infrared emitters.
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Affiliation(s)
- Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Paul Schmiedeke
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
| | - Siddharth Maddali
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439, United States
| | - Xiaobing Hu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
- The NUANCE Center, Northwestern University, Evanston, Illinois60208, United States
| | - Stephan O Hruszkewycz
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois60439, United States
| | - Jonathan J Finley
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Gregor Koblmüller
- Walter Schottky Institute and Physics Department, Technical University of Munich, Garching85748, Germany
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois60208, United States
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7
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Kuo L, Sangwan VK, Rangnekar SV, Chu TC, Lam D, Zhu Z, Richter LJ, Li R, Szydłowska BM, Downing JR, Luijten BJ, Lauhon LJ, Hersam MC. All-Printed Ultrahigh-Responsivity MoS 2 Nanosheet Photodetectors Enabled by Megasonic Exfoliation. Adv Mater 2022; 34:e2203772. [PMID: 35788996 DOI: 10.1002/adma.202203772] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 06/23/2022] [Indexed: 06/15/2023]
Abstract
Printed 2D materials, derived from solution-processed inks, offer scalable and cost-effective routes to mechanically flexible optoelectronics. With micrometer-scale control and broad processing latitude, aerosol-jet printing (AJP) is of particular interest for all-printed circuits and systems. Here, AJP is utilized to achieve ultrahigh-responsivity photodetectors consisting of well-aligned, percolating networks of semiconducting MoS2 nanosheets and graphene electrodes on flexible polyimide substrates. Ultrathin (≈1.2 nm thick) and high-aspect-ratio (≈1 μm lateral size) MoS2 nanosheets are obtained by electrochemical intercalation followed by megasonic atomization during AJP, which not only aerosolizes the inks but also further exfoliates the nanosheets. The incorporation of the high-boiling-point solvent terpineol into the MoS2 ink is critical for achieving a highly aligned and flat thin-film morphology following AJP as confirmed by grazing-incidence wide-angle X-ray scattering and atomic force microscopy. Following AJP, curing is achieved with photonic annealing, which yields quasi-ohmic contacts and photoactive channels with responsivities exceeding 103 A W-1 that outperform previously reported all-printed visible-light photodetectors by over three orders of magnitude. Megasonic exfoliation coupled with properly designed AJP ink formulations enables the superlative optoelectronic properties of ultrathin MoS2 nanosheets to be preserved and exploited for the scalable additive manufacturing of mechanically flexible optoelectronics.
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Affiliation(s)
- Lidia Kuo
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Sonal V Rangnekar
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Ting-Ching Chu
- Applied Physics Graduate Program, Northwestern University, Evanston, IL, 60208, USA
| | - David Lam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Zhehao Zhu
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Lee J Richter
- National Institute of Standards and Technology, Gaithersburg, MD, 20899, USA
| | - Ruipeng Li
- National Synchrotron Light Source II, Brookhaven National Laboratory, Upton, NY, 11973, USA
| | - Beata M Szydłowska
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Julia R Downing
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Benjamin J Luijten
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, IL, 60208, USA
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8
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Abstract
Photodetectors fabricated from low-dimensional materials such as quantum dots, nanowires, and two-dimensional materials show tremendous promise based on reports of very high responsivities. However, it is not generally appreciated that maximizing the internal gain may compromise the detector performance at low light levels, reducing its sensitivity. Here, we show that for most low-dimensional photodetectors with internal gain the sensitivity is determined by the junction capacitance. Thanks to their extremely small junction capacitances and reduced charge screening, low-dimensional materials and devices provide clear advantages over bulk semiconductors in the pursuit of high-sensitivity photodetectors. This mini-review describes and validates a method to estimate the capacitance from external photoresponse measurements, providing a straightforward approach to extract the device sensitivity and benchmark against physical limits. This improved physical understanding can guide the design of low-dimensional photodetectors to effectively leverage their unique advantage and achieve sensitivities that can exceed that of the best existing photodetectors.
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Affiliation(s)
- Mohsen Rezaei
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Simone Bianconi
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Material Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Hooman Mohseni
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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9
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Friedl M, Cerveny K, Huang C, Dede D, Samani M, Hill MO, Morgan N, Kim W, Güniat L, Segura-Ruiz J, Lauhon LJ, Zumbühl DM, Fontcuberta I Morral A. Remote Doping of Scalable Nanowire Branches. Nano Lett 2020; 20:3577-3584. [PMID: 32315191 DOI: 10.1021/acs.nanolett.0c00517] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization-a signature of strong spin-orbit interaction-across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.
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Affiliation(s)
- Martin Friedl
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Kris Cerveny
- Department of Physics, University of Basel, Basel, Switzerland
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Didem Dede
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Mohammad Samani
- Department of Physics, University of Basel, Basel, Switzerland
| | - Megan O Hill
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | - Nicholas Morgan
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Wonjong Kim
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | - Lucas Güniat
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
| | | | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois, United States
| | | | - Anna Fontcuberta I Morral
- Institute of Materials, Faculty of Engineering, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
- Institute of Physics, Faculty of Basic Sciences, École Polytechnique Fédérale de Lausanne, Lausanne, Switzerland
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10
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Abstract
ConspectusThe electronic dimensionality of a material is defined by the number of spatial degrees of confinement of its electronic wave function. Low-dimensional semiconductor nanomaterials with at least one degree of spatial confinement have optoelectronic properties that are tunable with size and environment (dielectric and chemical) and are of particular interest for optoelectronic applications such as light detection, light harvesting, and photocatalysis. By combining nanomaterials of differing dimensionalities, mixed-dimensional heterojunctions (MDHJs) exploit the desirable characteristics of their components. For example, the strong optical absorption of zero-dimensional (0D) materials combined with the high charge carrier mobilities of two-dimensional (2D) materials widens the spectral response and enhances the responsivity of mixed-dimensional photodetectors, which has implications for ultrathin, flexible optoelectronic devices. MDHJs are highly sensitive to (i) interfacial chemistry because of large surface area-to-volume ratios and (ii) electric fields, which are incompletely screened because of the ultrathin nature of MDHJs. This sensitivity presents opportunities for control of physical phenomena in MDHJs through chemical modification, optical excitation, externally applied electric fields, and other environmental parameters. Since this fast-moving research area is beginning to pose and answer fundamental questions that underlie the fundamental optoelectronic behavior of MDHJs, it is an opportune time to assess progress and suggest future directions in this field.In this Account, we first outline the characteristic properties, advantages, and challenges for low-dimensional materials, many of which arise as a result of quantum confinement effects. The optoelectronic properties and performance of MDHJs are primarily determined by dynamics of excitons and charge carriers at their interfaces, where these particles tunnel, trap, scatter, and/or recombine on the time scales of tens of femtoseconds to hundreds of nanoseconds. We discuss several photophysical phenomena that deviate from those observed in bulk heterojunctions, as well as factors that can be used to vary, probe, and ultimately control the behavior of excitons and charge carriers in MDHJ systems. We then discuss optoelectronic applications of MDHJs, namely, photodetectors, photovoltaics, and photocatalysts, and identify current performance limits compared to state-of-the-art benchmarks. Finally, we suggest strategies to extend the current understanding of dynamics in MDHJs toward the realization of stimuli-driven responses, particularly with respect to exciton delocalization, quantum emission, interfacial morphology, responsivity to external stimuli, spin selectivity, and usage of chemically reactive materials.
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11
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Li S, Zhong C, Henning A, Sangwan VK, Zhou Q, Liu X, Rahn MS, Wells SA, Park HY, Luxa J, Sofer Z, Facchetti A, Darancet P, Marks TJ, Lauhon LJ, Weiss EA, Hersam MC. Molecular-Scale Characterization of Photoinduced Charge Separation in Mixed-Dimensional InSe-Organic van der Waals Heterostructures. ACS Nano 2020; 14:3509-3518. [PMID: 32078300 DOI: 10.1021/acsnano.9b09661] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Layered indium selenide (InSe) is an emerging two-dimensional semiconductor that has shown significant promise for high-performance transistors and photodetectors. The range of optoelectronic applications for InSe can potentially be broadened by forming mixed-dimensional van der Waals heterostructures with zero-dimensional molecular systems that are widely employed in organic electronics and photovoltaics. Here, we report the spatially resolved investigation of photoinduced charge separation between InSe and two molecules (C70 and C8-BTBT) using scanning tunneling microscopy combined with laser illumination. We experimentally and computationally show that InSe forms type-II and type-I heterojunctions with C70 and C8-BTBT, respectively, due to an interplay of charge transfer and dielectric screening at the interface. Laser-excited scanning tunneling spectroscopy reveals a ∼0.25 eV decrease in the energy of the lowest unoccupied molecular orbital of C70 with optical illumination. Furthermore, photoluminescence spectroscopy and Kelvin probe force microscopy indicate that electron transfer from InSe to C70 in the type-II heterojunction induces a photovoltage that quantitatively matches the observed downshift in the tunneling spectra. In contrast, no significant changes are observed upon optical illumination in the type-I heterojunction formed between InSe and C8-BTBT. Density functional theory calculations further show that, despite the weak coupling between the molecular species and InSe, the band alignment of these mixed-dimensional heterostructures strongly differs from the one suggested by the ionization potential and electronic affinities of the isolated components. Self-energy-corrected density functional theory indicates that these effects are the result of the combination of charge redistribution at the interface and heterogeneous dielectric screening of the electron-electron interactions in the heterostructure. In addition to providing specific insight for mixed-dimensional InSe-organic van der Waals heterostructures, this work establishes a general experimental methodology for studying localized charge transfer at the molecular scale that is applicable to other photoactive nanoscale systems.
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Affiliation(s)
- Shaowei Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Chengmei Zhong
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Alex Henning
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Qunfei Zhou
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Xiaolong Liu
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Matthew S Rahn
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Spencer A Wells
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Hong Youl Park
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Jan Luxa
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technicka 5, 166 28 Prague 6, Czech Republic
| | - Antonio Facchetti
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Pierre Darancet
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Northwestern Argonne Institute for Science and Engineering, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
| | - Emily A Weiss
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208-3108, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208-3113, United States
- Applied Physics Graduate Program, Northwestern University, Evanston, Illinois 60208-3113, United States
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12
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Teich J, Dvir R, Henning A, Hamo ER, Moody MJ, Jurca T, Cohen H, Marks TJ, Rosen BA, Lauhon LJ, Ismach A. Light and complex 3D MoS 2/graphene heterostructures as efficient catalysts for the hydrogen evolution reaction. Nanoscale 2020; 12:2715-2725. [PMID: 31950961 DOI: 10.1039/c9nr09564k] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Multi-component 3D porous structures are highly promising hierarchical materials for numerous applications. Herein we show that atomic-layer deposition (ALD) of MoS2 on graphene foams with variable pore size is a promising methodology to prepare complex 3D heterostructures to be used as electrocatalysts for the hydrogen evolution reaction (HER). The effect of MoS2 crystallinity is studied and a trade-off between the high density of defects naturally presented in amorphous MoS2 coatings and the highly crystalline phase obtained after annealing at 800 °C is established. Specifically, an optimal annealing at 500 °C is shown to yield improved catalytic performance with an overpotential of 180 mV, a low Tafel slope of 47 mV dec-1, and a high exchange current of 17 μA cm-2. The ALD deposition is highly conformal, and thus advantageous when coating 3D porous structures with small pore sizes, as required for real-world applications. This approach is enabled by conformal thin film deposition on porous structures with controlled crystallinity by tuning the annealing temperature. The results presented here therefore serve as an effective and general platform for the design of chemically and structurally tunable, binder-free, complex, lightweight, and highly efficient 3D porous heterostructures to be used for catalysis, energy storage, composite materials, sensors, water treatment, and more.
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Affiliation(s)
- Jonah Teich
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.
| | - Ravit Dvir
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.
| | - Alex Henning
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Eliran R Hamo
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.
| | - Michael J Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Titel Jurca
- Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Hagai Cohen
- Weizmann Inst Science, Department of Chemical Research Support, IL-76100 Rehovot, Israel
| | - Tobin J Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA and Department of Chemistry, Northwestern University, Evanston, IL 60208, USA
| | - Brian A Rosen
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA
| | - Ariel Ismach
- Department of Materials Science and Engineering, Tel Aviv University, Ramat Aviv, Tel Aviv, 6997801, Israel.
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13
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Shang JY, Moody MJ, Chen J, Krylyuk S, Davydov AV, Marks TJ, Lauhon LJ. In situ transport measurements reveal source of mobility enhancement of MoS 2 and MoTe 2 during dielectric deposition. ACS Appl Electron Mater 2020; 2:1273-1279. [PMID: 33313511 PMCID: PMC7727257 DOI: 10.1021/acsaelm.0c00085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.
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Affiliation(s)
- Ju Ying Shang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
| | - Michael J. Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
| | - Jiazhen Chen
- Department of Chemistry, Northwestern University, Evanston, IL 60208, United States
| | - Sergiy Krylyuk
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Albert V. Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Tobin J. Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
- Department of Chemistry, Northwestern University, Evanston, IL 60208, United States
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
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14
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Adusumilli P, Murray CE, Lauhon LJ, Avayu O, Rosenwaks Y, Seidman DN. Three-Dimensional Atom-Probe Tomographic Studies of Nickel Monosilicide/Silicon Interfaces on a Subnanometer Scale. ACTA ACUST UNITED AC 2019. [DOI: 10.1149/1.3118957] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
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15
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Olding JN, Henning A, Dong JT, Zhou Q, Moody MJ, Smeets PJM, Darancet P, Weiss EA, Lauhon LJ. Charge Separation in Epitaxial SnS/MoS 2 Vertical Heterojunctions Grown by Low-Temperature Pulsed MOCVD. ACS Appl Mater Interfaces 2019; 11:40543-40550. [PMID: 31573788 DOI: 10.1021/acsami.9b14412] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The weak van der Waals bonding between monolayers in layered materials enables fabrication of heterostructures without the constraints of conventional heteroepitaxy. Although many novel heterostructures have been created by mechanical exfoliation and stacking, the direct growth of 2D chalcogenide heterostructures creates new opportunities for large-scale integration. This paper describes the epitaxial growth of layered, p-type tin sulfide (SnS) on n-type molybdenum disulfide (MoS2) by pulsed metal-organic chemical vapor deposition at 180 °C. The influence of precursor pulse and purge times on film morphology establishes growth conditions that favor layer-by-layer growth of SnS, which is critical for materials with layer-dependent electronic properties. Kelvin probe force microscopy measurements determine a built-in potential as high as 0.95 eV, and under illumination a surface photovoltage is generated, consistent with the expected Type-II band alignment for a multilayer SnS/MoS2 heterostructure. The bottom-up growth of a nonisostructural heterojunction comprising 2D semiconductors expands the combinations of materials available for scalable production of ultrathin devices with field-tunable responses.
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Affiliation(s)
- Jack N Olding
- Applied Physics Graduate Program , Northwestern University , Evanston , Illinois 60208 , United States
| | - Alex Henning
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Jason T Dong
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Qunfei Zhou
- Materials Research Science and Engineering Center , Northwestern University , Evanston , Illinois 60208 , United States
- Center for Nanoscale Materials , Argonne National Laboratory , 9700 South Cass Avenue , Lemont , Illinois 60439 , United States
| | - Michael J Moody
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Paul J M Smeets
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- NUANCE Center , Northwestern University , Evanston , Illinois 60208 , United States
| | - Pierre Darancet
- Materials Research Science and Engineering Center , Northwestern University , Evanston , Illinois 60208 , United States
- Center for Nanoscale Materials , Argonne National Laboratory , 9700 South Cass Avenue , Lemont , Illinois 60439 , United States
| | - Emily A Weiss
- Applied Physics Graduate Program , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Chemistry , Northwestern University , Evanston , Illinois 60208-3113 , United States
| | - Lincoln J Lauhon
- Applied Physics Graduate Program , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
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16
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Lähnemann J, Hill MO, Herranz J, Marquardt O, Gao G, Al Hassan A, Davtyan A, Hruszkewycz SO, Holt MV, Huang C, Calvo-Almazán I, Jahn U, Pietsch U, Lauhon LJ, Geelhaar L. Correlated Nanoscale Analysis of the Emission from Wurtzite versus Zincblende (In,Ga)As/GaAs Nanowire Core-Shell Quantum Wells. Nano Lett 2019; 19:4448-4457. [PMID: 31141672 DOI: 10.1021/acs.nanolett.9b01241] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blue-shift of the quantum well emission energy by 75 ± 15 meV in the wurtzite polytype segment. Nanoprobe X-ray diffraction and atom probe tomography enable k·p calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional band gap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures.
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Affiliation(s)
- Jonas Lähnemann
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Megan O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Jesús Herranz
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Oliver Marquardt
- Weierstraß-Institut für Angewandte Analysis und Stochastik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Mohrenstr. 39 , 10117 Berlin , Germany
| | - Guanhui Gao
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ali Al Hassan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Arman Davtyan
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Stephan O Hruszkewycz
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Martin V Holt
- Center for Nanoscale Materials , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Chunyi Huang
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Irene Calvo-Almazán
- Materials Science Division , Argonne National Laboratory , Argonne , Illinois 60439 , United States
| | - Uwe Jahn
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
| | - Ullrich Pietsch
- Naturwissenschaftlich-Technische Fakultät der Universität Siegen , 57068 Siegen , Germany
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lutz Geelhaar
- Paul-Drude-Institut für Festkörperelektronik , Leibniz-Institut im Forschungsverbund Berlin e.V. , Hausvogteiplatz 5-7 , 10117 Berlin , Germany
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17
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Nathamgari SSP, Dong S, Medina L, Moldovan N, Rosenmann D, Divan R, Lopez D, Lauhon LJ, Espinosa HD. Nonlinear Mode Coupling and One-to-One Internal Resonances in a Monolayer WS 2 Nanoresonator. Nano Lett 2019; 19:4052-4059. [PMID: 31117759 DOI: 10.1021/acs.nanolett.9b01442] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/20/2023]
Abstract
Nanomechanical resonators make exquisite force sensors due to their small footprint, low dissipation, and high frequencies. Because the lowest resolvable force is limited by ambient thermal noise, resonators are either operated at cryogenic temperatures or coupled to a high-finesse optical or microwave cavity to reach sub aN Hz-1/2 sensitivity. Here, we show that operating a monolayer WS2 nanoresonator in the strongly nonlinear regime can lead to comparable force sensitivities at room temperature. Cavity interferometry was used to transduce the nonlinear response of the nanoresonator, which was characterized by multiple pairs of 1:1 internal resonance. Some of the modes exhibited exotic line shapes due to the appearance of Hopf bifurcations, where the bifurcation frequency varied linearly with the driving force and forms the basis of the advanced sensing modality. The modality is less sensitive to the measurement bandwidth, limited only by the intrinsic frequency fluctuations, and therefore, advantageous in the detection of weak incoherent forces.
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Affiliation(s)
- S Shiva P Nathamgari
- Department of Mechanical Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Theoretical and Applied Mechanics Program , Northwestern University , Evanston , Illinois 60208 , United States
| | - Siyan Dong
- Department of Mechanical Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Theoretical and Applied Mechanics Program , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lior Medina
- Department of Mechanical Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | | | - Daniel Rosenmann
- Center for Nanoscale Materials , Argonne National Laboratories , Argonne , Illinois 60439 , United States
| | - Ralu Divan
- Center for Nanoscale Materials , Argonne National Laboratories , Argonne , Illinois 60439 , United States
| | - Daniel Lopez
- Center for Nanoscale Materials , Argonne National Laboratories , Argonne , Illinois 60439 , United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Horacio D Espinosa
- Department of Mechanical Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Theoretical and Applied Mechanics Program , Northwestern University , Evanston , Illinois 60208 , United States
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18
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Ziv A, Tzaguy A, Sun Z, Yochelis S, Stratakis E, Kenanakis G, Schatz GC, Lauhon LJ, Seidman DN, Paltiel Y, Yerushalmi R. Broad-band high-gain room temperature photodetectors using semiconductor-metal nanofloret hybrids with wide plasmonic response. Nanoscale 2019; 11:6368-6376. [PMID: 30888369 DOI: 10.1039/c9nr00385a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Semiconducting nanowires are widely studied as building blocks for electro-optical devices; however, their limited cross-section and hence photo-response hinder the utilization of their full potential. Herein, we present an opto-electronic device for broad spectral detection ranging from the visible (VIS) to the short wavelength infra-red (SWIR) regime, using SiGe nanowires coupled to a broadband plasmonic antenna. The plasmonic amplification is obtained by deposition of a metallic nanotip at the edge of a nanowire utilizing a bottom-up synthesis technique. The metallic nanotip is positioned such that both optical plasmonic modes and electrical detection paths are coupled, resulting in a specific detectivity improvement of ∼1000 compared to conventional SiGe NWs. Detectivity and high gain are also measured in the SWIR regime owing to the special plasmonic response. Furthermore, the temporal response is improved by ∼1000. The fabrication process is simple and scalable, and it relies on low-resolution and facile fabrication steps with minimal requirements for top-down techniques.
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Affiliation(s)
- Amir Ziv
- Department of Applied Physics, the Hebrew University, Jerusalem, Edmond J. Safra Campus, Givat Ram, Jerusalem, 91904, Israel.
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19
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Sun Z, Huang C, Guo J, Dong JT, Klie RF, Lauhon LJ, Seidman DN. Strain-Energy Release in Bent Semiconductor Nanowires Occurring by Polygonization or Nanocrack Formation. ACS Nano 2019; 13:3730-3738. [PMID: 30807693 DOI: 10.1021/acsnano.9b01231] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
Strain engineering of semiconductors is used to modulate carrier mobility, tune the energy bandgap, and drive growth of self-assembled nanostructures. Understanding strain-energy relaxation mechanisms including phase transformations, dislocation nucleation and migration, and fracturing is essential to both exploit this degree of freedom and avoid degradation of carrier lifetime and mobility, particularly in prestrained electronic devices and flexible electronics that undergo large changes in strain during operation. Raman spectroscopy, high-resolution transmission electron microscopy, and electron diffraction are utilized to identify strain-energy release mechanisms of bent diamond-cubic silicon (Si) and zinc-blende GaAs nanowires, which were elastically strained to >6% at room temperature and then annealed at an elevated temperature to activate relaxation mechanisms. High-temperature annealing of bent Si-nanowires leads to the nucleation, glide, and climb of dislocations, which align themselves to form grain boundaries, thereby reducing the strain energy. Herein, Si nanowires are reported to undergo polygonization, which is the formation of polygonal-shaped grains separated by grain boundaries consisting of aligned edge dislocations. Furthermore, strain is shown to drive dopant diffusion. In contrast to the behavior of Si, GaAs nanowires release strain energy by forming nanocracks in regions of tensile strain due to the weakening of As-bonds. These insights into the relaxation behavior of highly strained crystals can inform the design of nanoelectronic devices and provide guidance on mitigating degradation.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
| | - Chunyi Huang
- Department of Materials Science and Engineering , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
| | - Jinglong Guo
- Department of Physics , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Jason T Dong
- Department of Materials Science and Engineering , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
| | - Robert F Klie
- Department of Physics , University of Illinois at Chicago , Chicago , Illinois 60607 , United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
| | - David N Seidman
- Department of Materials Science and Engineering , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
- Center for Atom-Probe Tomography (NUCAPT) , Northwestern University , 2220 Campus Drive , Evanston , Illinois 60208-3108 , United States
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20
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Wells SA, Henning A, Gish JT, Sangwan VK, Lauhon LJ, Hersam MC. Suppressing Ambient Degradation of Exfoliated InSe Nanosheet Devices via Seeded Atomic Layer Deposition Encapsulation. Nano Lett 2018; 18:7876-7882. [PMID: 30418785 DOI: 10.1021/acs.nanolett.8b03689] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
With exceptional charge carrier mobilities and a direct bandgap at most thicknesses, indium selenide (InSe) is an emerging layered semiconductor that has generated significant interest for electronic and optoelectronic applications. However, exfoliated InSe nanosheets are susceptible to rapid degradation in ambient conditions, thus limiting their technological potential. In addition to morphological changes upon ambient exposure, the mobilities and current modulation on/off ratios of InSe transistors, as well as the responsivities of InSe photodetectors, decrease by over 3 orders of magnitude within 12 h of ambient exposure. In an effort to mitigate these deleterious effects, here we present an encapsulation scheme based on seeded atomic layer deposition that provides pinhole-free growth of alumina without compromising the intrinsic electronic properties of the underlying InSe. In particular, this encapsulation provides reproducible InSe field-effect transistor characteristics and InSe photodetector responsivities in excess of 107 A/W following ambient exposure for time periods on the order of months. Because atomic layer deposition is a highly scalable and manufacturable process, this work will accelerate ongoing efforts to integrate InSe nanosheets into electronic and optoelectronic technologies.
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Affiliation(s)
- Spencer A Wells
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Alex Henning
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J Tyler Gish
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Mark C Hersam
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Chemistry , Northwestern University , Evanston , Illinois 60208 , United States
- Department of Electrical Engineering and Computer Science , Northwestern University , Evanston , Illinois 60208 , United States
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21
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Stettner T, Thurn A, Döblinger M, Hill MO, Bissinger J, Schmiedeke P, Matich S, Kostenbader T, Ruhstorfer D, Riedl H, Kaniber M, Lauhon LJ, Finley JJ, Koblmüller G. Tuning Lasing Emission toward Long Wavelengths in GaAs-(In,Al)GaAs Core-Multishell Nanowires. Nano Lett 2018; 18:6292-6300. [PMID: 30185051 DOI: 10.1021/acs.nanolett.8b02503] [Citation(s) in RCA: 25] [Impact Index Per Article: 4.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.
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Affiliation(s)
- T Stettner
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - A Thurn
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Döblinger
- Department of Chemistry , Ludwig-Maximilians-Universität München , 81377 München , Germany
| | - M O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J Bissinger
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - P Schmiedeke
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - S Matich
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - T Kostenbader
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - D Ruhstorfer
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - H Riedl
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - M Kaniber
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - L J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - J J Finley
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
| | - G Koblmüller
- Walter Schottky Institut and Physik Department , Technische Universität München , 85748 Garching , Germany
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22
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Pöpsel C, Becker J, Jeon N, Döblinger M, Stettner T, Gottschalk YT, Loitsch B, Matich S, Altzschner M, Holleitner AW, Finley JJ, Lauhon LJ, Koblmüller G. He-Ion Microscopy as a High-Resolution Probe for Complex Quantum Heterostructures in Core-Shell Nanowires. Nano Lett 2018; 18:3911-3919. [PMID: 29781624 DOI: 10.1021/acs.nanolett.8b01282] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Core-shell semiconductor nanowires (NW) with internal quantum heterostructures are amongst the most complex nanostructured materials to be explored for assessing the ultimate capabilities of diverse ultrahigh-resolution imaging techniques. To probe the structure and composition of these materials in their native environment with minimal damage and sample preparation calls for high-resolution electron or ion microscopy methods, which have not yet been tested on such classes of ultrasmall quantum nanostructures. Here, we demonstrate that scanning helium ion microscopy (SHeIM) provides a powerful and straightforward method to map quantum heterostructures embedded in complex III-V semiconductor NWs with unique material contrast at ∼1 nm resolution. By probing the cross sections of GaAs-Al(Ga)As core-shell NWs with coaxial GaAs quantum wells as well as short-period GaAs/AlAs superlattice (SL) structures in the shell, the Al-rich and Ga-rich layers are accurately discriminated by their image contrast in excellent agreement with correlated, yet destructive, scanning transmission electron microscopy and atom probe tomography analysis. Most interestingly, quantitative He-ion dose-dependent SHeIM analysis of the ternary AlGaAs shell layers and of compositionally nonuniform GaAs/AlAs SLs reveals distinct alloy composition fluctuations in the form of Al-rich clusters with size distributions between ∼1-10 nm. In the GaAs/AlAs SLs the alloy clustering vanishes with increasing SL-period (>5 nm-GaAs/4 nm-AlAs), providing insights into critical size dimensions for atomic intermixing effects in short-period SLs within a NW geometry. The straightforward SHeIM technique therefore provides unique benefits in imaging the tiniest nanoscale features in topography, structure and composition of a multitude of diverse complex semiconductor nanostructures.
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Affiliation(s)
- Christian Pöpsel
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Jonathan Becker
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Nari Jeon
- Department of Materials Science & Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Markus Döblinger
- Department of Chemistry , Ludwig-Maximilian-Universität München , Butenandtstraße 5-13 , München , 81377 , Germany
| | - Thomas Stettner
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Yeanitza Trujillo Gottschalk
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Bernhard Loitsch
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Sonja Matich
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Marcus Altzschner
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Alexander W Holleitner
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Jonathan J Finley
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
| | - Lincoln J Lauhon
- Department of Materials Science & Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Gregor Koblmüller
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials , Technische Universität München , Am Coulombwall 4 , Garching , 85748 , Germany
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23
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Henning A, Sangwan VK, Bergeron H, Balla I, Sun Z, Hersam MC, Lauhon LJ. Charge Separation at Mixed-Dimensional Single and Multilayer MoS 2/Silicon Nanowire Heterojunctions. ACS Appl Mater Interfaces 2018; 10:16760-16767. [PMID: 29682958 DOI: 10.1021/acsami.8b03133] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/27/2023]
Abstract
Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS2 isotype heterojunctions with p-Si/MoS2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.
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24
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Friedl M, Cerveny K, Weigele P, Tütüncüoglu G, Martí-Sánchez S, Huang C, Patlatiuk T, Potts H, Sun Z, Hill MO, Güniat L, Kim W, Zamani M, Dubrovskii VG, Arbiol J, Lauhon LJ, Zumbühl DM, Fontcuberta I Morral A. Template-Assisted Scalable Nanowire Networks. Nano Lett 2018; 18:2666-2671. [PMID: 29579392 DOI: 10.1021/acs.nanolett.8b00554] [Citation(s) in RCA: 50] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.
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Affiliation(s)
- Martin Friedl
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | - Kris Cerveny
- Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland
| | - Pirmin Weigele
- Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland
| | - Gozde Tütüncüoglu
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | - Sara Martí-Sánchez
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona , Catalonia Spain
| | - Chunyi Huang
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Taras Patlatiuk
- Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland
| | - Heidi Potts
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | - Zhiyuan Sun
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Megan O Hill
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Lucas Güniat
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | - Wonjong Kim
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | - Mahdi Zamani
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
| | | | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2) , CSIC and BIST , Campus UAB, Bellaterra , 08193 Barcelona , Catalonia Spain
- ICREA , Pg. Lluís Companys 23 , 08010 Barcelona , Catalonia , Spain
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering , Northwestern University , Evanston , Illinois 60208 , United States
| | - Dominik M Zumbühl
- Department of Physics , University of Basel , Klingelbergstrasse 82 , CH-4056 Basel , Switzerland
| | - Anna Fontcuberta I Morral
- Laboratoire des Matériaux Semiconducteurs , École Polytechnique Fédérale de Lausanne, EPFL , 1015 Lausanne , Switzerland
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25
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Sangwan VK, Beck ME, Henning A, Luo J, Bergeron H, Kang J, Balla I, Inbar H, Lauhon LJ, Hersam MC. Self-Aligned van der Waals Heterojunction Diodes and Transistors. Nano Lett 2018; 18:1421-1427. [PMID: 29385342 DOI: 10.1021/acs.nanolett.7b05177] [Citation(s) in RCA: 21] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Megan E Beck
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Alex Henning
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Jiajia Luo
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Hadallia Bergeron
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Itamar Balla
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Hadass Inbar
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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26
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Hill MO, Calvo-Almazan I, Allain M, Holt MV, Ulvestad A, Treu J, Koblmüller G, Huang C, Huang X, Yan H, Nazaretski E, Chu YS, Stephenson GB, Chamard V, Lauhon LJ, Hruszkewycz SO. Measuring Three-Dimensional Strain and Structural Defects in a Single InGaAs Nanowire Using Coherent X-ray Multiangle Bragg Projection Ptychography. Nano Lett 2018; 18:811-819. [PMID: 29345956 DOI: 10.1021/acs.nanolett.7b04024] [Citation(s) in RCA: 15] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
III-As nanowires are candidates for near-infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nanofocused X-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 21̅1̅0 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 011̅0 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multiangle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of X-ray radiation, together with the relaxed constraints of maBPP, will enable the in operando imaging of nanowire devices.
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Affiliation(s)
- Megan O Hill
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Irene Calvo-Almazan
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Marc Allain
- Aix-Marseille Univ, CNRS, Centrale Marseille, Institut Fresnel , Marseille 13013, France
| | - Martin V Holt
- Center for Nanoscale Materials, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Andrew Ulvestad
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Julian Treu
- Walter Schottky Institut and Physik Department, Technische Universität München , Garching 85748, Germany
| | - Gregor Koblmüller
- Walter Schottky Institut and Physik Department, Technische Universität München , Garching 85748, Germany
| | - Chunyi Huang
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Xiaojing Huang
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Hanfei Yan
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Evgeny Nazaretski
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - Yong S Chu
- National Synchrotron Light Source II, Brookhaven National Laboratory , Upton, New York 11973, United States
| | - G Brian Stephenson
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Virginie Chamard
- Aix-Marseille Univ, CNRS, Centrale Marseille, Institut Fresnel , Marseille 13013, France
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Stephan O Hruszkewycz
- Materials Science Division, Argonne National Laboratory , Argonne, Illinois 60439, United States
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27
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Zhang Y, Sun Z, Sanchez AM, Ramsteiner M, Aagesen M, Wu J, Kim D, Jurczak P, Huo S, Lauhon LJ, Liu H. Doping of Self-Catalyzed Nanowires under the Influence of Droplets. Nano Lett 2018; 18:81-87. [PMID: 29206466 DOI: 10.1021/acs.nanolett.7b03366] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Controlled and reproducible doping is essential for nanowires (NWs) to realize their functions. However, for the widely used self-catalyzed vapor-liquid-solid (VLS) growth mode, the doping mechanism is far from clear, as the participation of the nanoscale liquid phase makes the doping environment highly complex and significantly different from that of the thin film growth. Here, the doping mechanism of self-catalyzed NWs and the influence of self-catalytic droplets on the doping process are systematically studied using beryllium (Be) doped GaAs NWs. Be atoms are found for the first time to be incorporated into NWs predominantly through the Ga droplet that is observed to be beneficial for setting up thermodynamic equilibrium at the growth front. Be dopants are thus substitutional on Ga sites and redundant Be atoms are accumulated inside the Ga droplets when NWs are saturated, leading to the change of the Ga droplet properties and causing the growth of phase-pure zincblende NWs. This study is an essential step toward the design and fabrication of nanowire devices.
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Affiliation(s)
- Yunyan Zhang
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Ana M Sanchez
- Department of Physics, University of Warwick , Coventry CV4 7AL, United Kingdom
| | - Manfred Ramsteiner
- Paul-Drude-Institut für Festkörperelektronik , Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Martin Aagesen
- Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen , Universitetsparken 5, 2100 Copenhagen, Denmark
| | - Jiang Wu
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Dongyoung Kim
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Pamela Jurczak
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
| | - Suguo Huo
- London Centre for Nanotechnology, University College London , London WC1H 0AH, United Kingdom
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Huiyun Liu
- Department of Electronic and Electrical Engineering, University College London , London WC1E 7JE, United Kingdom
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28
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Sun Z, Tzaguy A, Hazut O, Lauhon LJ, Yerushalmi R, Seidman DN. 1-D Metal Nanobead Arrays within Encapsulated Nanowires via a Red-Ox-Induced Dewetting: Mechanism Study by Atom-Probe Tomography. Nano Lett 2017; 17:7478-7486. [PMID: 29116798 DOI: 10.1021/acs.nanolett.7b03391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Metal nanoparticle arrays are excellent candidates for a variety of applications due to the versatility of their morphology and structure at the nanoscale. Bottom-up self-assembly of metal nanoparticles provides an important complementary alternative to the traditional top-down lithography method and makes it possible to assemble structures with higher-order complexity, for example, nanospheres, nanocubes, and core-shell nanostructures. Here we present a mechanism study of the self-assembly process of 1-D noble metal nanoparticles arrays, composed of Au, Ag, and AuAg alloy nanoparticles. These are prepared within an encapsulated germanium nanowire, obtained by the oxidation of a metal-germanium nanowire hybrid structure. The resulting structure is a 1-D array of equidistant metal nanoparticles with the same diameter, the so-called nanobead (NB) array structure. Atom-probe tomography and transmission electron microscopy were utilized to investigate the details of the morphological and chemical evolution during the oxidation of the encapsulated metal-germanium nanowire hybrid-structures. The self-assembly of nanoparticles relies on the formation of a metal-germanium liquid alloy and the migration of the liquid alloy into the nanowire, followed by dewetting of the liquid during shape-confined oxidation where the liquid column breaks-up into nanoparticles due to the Plateau-Rayleigh instability. Our results demonstrate that the encapsulating oxide layer serves as a structural scaffold, retaining the overall shape during the eutectic liquid formation and demonstrates the relationship between the oxide mechanical properties and the final structural characteristics of the 1-D arrays. The mechanistic details revealed here provide a versatile tool-box for the bottom-up fabrication of 1-D arrays nanopatterning that can be modified for multiple applications according to the RedOx properties of the material system components.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Avra Tzaguy
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Ori Hazut
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
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29
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Sun Z, Hazut O, Yerushalmi R, Lauhon LJ, Seidman DN. Criteria and considerations for preparing atom-probe tomography specimens of nanomaterials utilizing an encapsulation methodology. Ultramicroscopy 2017; 184:225-233. [PMID: 28985626 DOI: 10.1016/j.ultramic.2017.09.007] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/03/2017] [Revised: 09/19/2017] [Accepted: 09/22/2017] [Indexed: 10/18/2022]
Abstract
Atom-probe tomography (APT) is a powerful method for characterization of nanomaterials due to its atomic-ppm level detection limit and Angstrom spatial resolution. Sample preparation for nanomaterials is, however, challenging because of their small dimensions and complicated geometries. Nanowires, with their high geometrical aspect ratio and nanowire length, 10 to 100 times their typical diameters, are highly suitable specimens for APT analyses, which can be transferred to silicon microposts using a nanomanipulator for direct APT measurements. This method is, however, prone to poor alignment and a limited field-of-view (FOV). Most importantly, direct implementation of APT with high aspect ratio nanowires may yield a low success rate of ∼30%, due to the high electric fields (10-40 V nm-1) associated with APT. While this is acceptable for samples analyzed solely by APT, a low sample yield makes it challenging to perform correlative experiments on the same nanowire specimen, utilizing other sophisticated characterization instruments. Herein, we introduce a general strategy for preparing high-yield APT specimens by encapsulating the nanowires utilizing a conformal atomic-layer deposition (ALD) coating followed by site-specific lift-out using a dual-beam focused-ion beam microscope. The ALD deposited coating forms strong chemical bonds with the Si nanowires yielding a high-quality and robust interface. The evaporation electric fields of the ALD coating and the nanowires are tuned by changing laser energy to obtain a uniform evaporation rate. The strong adhesion of the ALD-coating/nanowire interface and uniform evaporation rate produce a >90% specimen yield, with small concentration of reconstruction artifacts in 3-D. Simultaneously, the field-of-view is enhanced and the surface of the nanowire becomes visible, which makes the study of surface adsorption, segregation and oxidation possible. We utilized ALD-ZnO coated silicon nanowires as an example for investigating the criteria for choosing coating materials, laser pulse energy, laser direction, sample geometry, and substrate materials. The same criteria and considerations are applicable for preparing specimens of nanoparticles and 2-D material.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA
| | - Ori Hazut
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, the Hebrew University of Jerusalem, Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA.
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University, 2220 Campus Drive, Evanston, IL 60208-3108, USA; Northwestern University Center for Atom-Probe Tomography (NUCAPT), 2220 Campus Drive, Evanston, IL 60208-3108, USA.
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30
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Irber DM, Seidl J, Carrad DJ, Becker J, Jeon N, Loitsch B, Winnerl J, Matich S, Döblinger M, Tang Y, Morkötter S, Abstreiter G, Finley JJ, Grayson M, Lauhon LJ, Koblmüller G. Quantum Transport and Sub-Band Structure of Modulation-Doped GaAs/AlAs Core-Superlattice Nanowires. Nano Lett 2017; 17:4886-4893. [PMID: 28732167 DOI: 10.1021/acs.nanolett.7b01732] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Modulation-doped III-V semiconductor nanowire (NW) heterostructures have recently emerged as promising candidates to host high-mobility electron channels for future high-frequency, low-energy transistor technologies. The one-dimensional geometry of NWs also makes them attractive for studying quantum confinement effects. Here, we report correlated investigations into the discrete electronic sub-band structure of confined electrons in the channel of Si δ-doped GaAs-GaAs/AlAs core-superlattice NW heterostructures and the associated signatures in low-temperature transport. On the basis of accurate structural and dopant analysis using scanning transmission electron microscopy and atom probe tomography, we calculated the sub-band structure of electrons confined in the NW core and employ a labeling system inspired by atomic orbital notation. Electron transport measurements on top-gated NW transistors at cryogenic temperatures revealed signatures consistent with the depopulation of the quasi-one-dimensional sub-bands, as well as confinement in zero-dimensional-like states due to an impurity-defined background disorder potential. These findings are instructive toward reaching the ballistic transport regime in GaAs-AlGaAs based NW systems.
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Affiliation(s)
- Dominik M Irber
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Jakob Seidl
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Damon J Carrad
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Jonathan Becker
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Nari Jeon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Bernhard Loitsch
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Julia Winnerl
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Sonja Matich
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Markus Döblinger
- Department of Chemistry, Ludwig-Maximilians-Universität München , Munich 81377, Germany
| | - Yang Tang
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Stefanie Morkötter
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Gerhard Abstreiter
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Jonathan J Finley
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
| | - Matthew Grayson
- Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Gregor Koblmüller
- Walter Schottky Institut, Physik Department, and Center for Nanotechnology and Nanomaterials, Technical University of Munich , Garching, 85748, Germany
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31
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Abstract
Dopants modify the electronic properties of semiconductors, including their susceptibility to etching. In semiconductor nanowires doped during growth by the vapor-liquid-solid (VLS) process, it has been shown that nanofaceting of the liquid-solid growth interface influences strongly the radial distribution of dopants. Hence, the combination of facet-dependent doping and dopant selective etching provides a means to tune simultaneously the electronic properties and morphologies of nanowires. Using atom-probe tomography, we investigated the boron dopant distribution in Au catalyzed VLS grown silicon nanowires, which regularly kink between equivalent ⟨112⟩ directions. Segments alternate between radially uniform and nonuniform doping profiles, which we attribute to switching between a concave and convex faceted liquid-solid interface. Dopant selective etching was used to reveal and correlate the shape of the growth interface with the observed anisotropic doping.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
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32
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Jurca T, Moody MJ, Henning A, Emery JD, Wang B, Tan JM, Lohr TL, Lauhon LJ, Marks TJ. Low‐Temperature Atomic Layer Deposition of MoS
2
Films. Angew Chem Int Ed Engl 2017. [DOI: 10.1002/ange.201611838] [Citation(s) in RCA: 14] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022]
Affiliation(s)
- Titel Jurca
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Michael J. Moody
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Alex Henning
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Jonathan D. Emery
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Jeffrey M. Tan
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Tracy L. Lohr
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
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33
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Jurca T, Moody MJ, Henning A, Emery JD, Wang B, Tan JM, Lohr TL, Lauhon LJ, Marks TJ. Low‐Temperature Atomic Layer Deposition of MoS
2
Films. Angew Chem Int Ed Engl 2017; 56:4991-4995. [DOI: 10.1002/anie.201611838] [Citation(s) in RCA: 104] [Impact Index Per Article: 14.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/05/2016] [Revised: 02/20/2017] [Indexed: 11/06/2022]
Affiliation(s)
- Titel Jurca
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Michael J. Moody
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Alex Henning
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Jonathan D. Emery
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Binghao Wang
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Jeffrey M. Tan
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Tracy L. Lohr
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, and the Materials Research Center Northwestern University 2220 Campus Dr. Evanston IL 60208 USA
| | - Tobin J. Marks
- Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road Evanston IL 60208 USA
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34
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Yoon K, Lee JH, Kang J, Kang J, Moody MJ, Hersam MC, Lauhon LJ. Metal-Free Carbon-Based Nanomaterial Coatings Protect Silicon Photoanodes in Solar Water-Splitting. Nano Lett 2016; 16:7370-7375. [PMID: 27960516 DOI: 10.1021/acs.nanolett.6b02691] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The decreasing cost of silicon-based photovoltaics has enabled significant increases in solar electricity generation worldwide. Silicon photoanodes could also play an important role in the cost-effective generation of solar fuels, but the most successful methods of photoelectrode passivation and performance enhancement rely on a combination of precious metals and sophisticated processing methods that offset the economic arguments for silicon. Here we show that metal-free carbon-based nanomaterial coatings deposited from solution can protect silicon photoanodes carrying out the oxygen evolution reaction in a range of working environments. Purified semiconducting carbon nanotubes (CNTs) act as a hole extraction layer, and a graphene (Gr) capping layer both protects the CNT film and acts as a hole exchange layer with the electrolyte. The performance of semiconducting CNTs is found to be superior to that of metallic or unsorted CNTs in this context. Furthermore, the insertion of graphene oxide (GO) between the n-Si and CNTs reduces the overpotential relative to photoanodes with CNTs deposited on hydrogen-passivated silicon. The composite photoanode structure of n-Si/GO/CNT/Gr shows promising performance for oxygen evolution and excellent potential for improvement by optimizing the catalytic properties and stability of the graphene protective layer.
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Affiliation(s)
- KunHo Yoon
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Jae-Hyeok Lee
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Joohoon Kang
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Michael J Moody
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Department of Electrical Engineering and Computer Science, Northwestern University , Evanston, Illinois 60208, United States
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35
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Abstract
This paper describes an evolutionary approach to design flat multiwavelength achromatic lenses based on subwavelength plasmonic nanoparticles. Our lattice evolution algorithm achieved desired optical responses by tuning the arrangement of the phase units on a discrete square lattice. Lattice lenses consisting of a single type of nanoparticle could operate at any wavelength in the visible to near-infrared regime (540-1000 nm) by tailoring the localized surface plasmon resonance. When the unit cells were expanded to anisotropic particle shapes, the planar optics could selectively focus light depending on the polarization of incident light. Finally, the algorithm realized efficient multiobjective optimization and produced achromatic lattice lenses at up to three wavelengths (λ = 600 nm, λ = 785 nm, and λ = 980 nm) using multiple different nanoparticle shapes.
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Affiliation(s)
- Jingtian Hu
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Chang-Hua Liu
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Xiaochen Ren
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Teri W Odom
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
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36
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Ren X, Singh AK, Fang L, Kanatzidis MG, Tavazza F, Davydov AV, Lauhon LJ. Atom Probe Tomography Analysis of Ag Doping in 2D Layered Material (PbSe) 5(Bi 2Se 3) 3. Nano Lett 2016; 16:6064-6069. [PMID: 27603879 DOI: 10.1021/acs.nanolett.6b02104] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Impurity doping in two-dimensional (2D) materials can provide a route to tuning electronic properties, so it is important to be able to determine the distribution of dopant atoms within and between layers. Here we report the tomographic mapping of dopants in layered 2D materials with atomic sensitivity and subnanometer spatial resolution using atom probe tomography (APT). APT analysis shows that Ag dopes both Bi2Se3 and PbSe layers in (PbSe)5(Bi2Se3)3, and correlations in the position of Ag atoms suggest a pairing across neighboring Bi2Se3 and PbSe layers. Density functional theory (DFT) calculations confirm the favorability of substitutional doping for both Pb and Bi and provide insights into the observed spatial correlations in dopant locations.
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Affiliation(s)
- Xiaochen Ren
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States
| | - Arunima K Singh
- Materials Science and Engineering Division, National Institute of Standards and Technology , 100 Bureau Drive, Gaithersburg, Maryland 20899, United States
| | - Lei Fang
- Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Materials Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Argonne, Illinois 60439, United States
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University , 2145 Sheridan Road, Evanston, Illinois 60208, United States
- Materials Science Division, Argonne National Laboratory , 9700 South Cass Avenue, Argonne, Illinois 60439, United States
| | - Francesca Tavazza
- Materials Science and Engineering Division, National Institute of Standards and Technology , 100 Bureau Drive, Gaithersburg, Maryland 20899, United States
| | - Albert V Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology , 100 Bureau Drive, Gaithersburg, Maryland 20899, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208, United States
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37
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Sun Z, Hazut O, Huang BC, Chiu YP, Chang CS, Yerushalmi R, Lauhon LJ, Seidman DN. Dopant Diffusion and Activation in Silicon Nanowires Fabricated by ex Situ Doping: A Correlative Study via Atom-Probe Tomography and Scanning Tunneling Spectroscopy. Nano Lett 2016; 16:4490-4500. [PMID: 27351447 DOI: 10.1021/acs.nanolett.6b01693] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Dopants play a critical role in modulating the electric properties of semiconducting materials, ranging from bulk to nanoscale semiconductors, nanowires, and quantum dots. The application of traditional doping methods developed for bulk materials involves additional considerations for nanoscale semiconductors because of the influence of surfaces and stochastic fluctuations, which may become significant at the nanometer-scale level. Monolayer doping is an ex situ doping method that permits the post growth doping of nanowires. Herein, using atom-probe tomography (APT) with subnanometer spatial resolution and atomic-ppm detection limit, we study the distributions of boron and phosphorus in ex situ doped silicon nanowires with accurate control. A highly phosphorus doped outer region and a uniformly boron doped interior are observed, which are not predicted by criteria based on bulk silicon. These phenomena are explained by fast interfacial diffusion of phosphorus and enhanced bulk diffusion of boron, respectively. The APT results are compared with scanning tunneling spectroscopy data, which yields information concerning the electrically active dopants. Overall, comparing the information obtained by the two methods permits us to evaluate the diffusivities of each different dopant type at the nanowire oxide, interface, and core regions. The combined data sets permit us to evaluate the electrical activation and compensation of the dopants in different regions of the nanowires and understand the details that lead to the sharp p-i-n junctions formed across the nanowire for the ex situ doping process.
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Affiliation(s)
- Zhiyuan Sun
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - Ori Hazut
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Bo-Chao Huang
- Institute of Physics, Academia Sinica , Nankang, Taipei 115, Taiwan
| | - Ya-Ping Chiu
- Institute of Physics, Academia Sinica , Nankang, Taipei 115, Taiwan
- Department of Physics, National Taiwan Normal University , Taipei 116, Taiwan
| | - Chia-Seng Chang
- Institute of Physics, Academia Sinica , Nankang, Taipei 115, Taiwan
| | - Roie Yerushalmi
- Institute of Chemistry and the Center for Nanoscience and Nanotechnology, The Hebrew University of Jerusalem , Edmond J. Safra Campus, Givat Ram, Jerusalem 91904, Israel
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
| | - David N Seidman
- Department of Materials Science and Engineering, Northwestern University , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
- Northwestern University Center for Atom-Probe Tomography (NUCAPT) , 2220 Campus Drive, Evanston, Illinois 60208-3108, United States
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38
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Abstract
The modulation between different doping species required to produce a diode in VLS-grown nanowires (NWs) yields a complex doping profile, both axially and radially, and a gradual junction at the interface. We present a detailed analysis of the dopant distribution around the junction. By combining surface potential measurements, performed by KPFM, with finite element simulations, we show that the highly doped (5 × 10(19) cm(-3)) shell surrounding the NW can screen the junction's built in voltage at shell thickness as low as 3 nm. By comparing NWs with high and low doping contrast at the junction, we show that dopant compensation dramatically decreases the electrostatic width of the junction and results in relatively low leakage currents.
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Affiliation(s)
- Iddo Amit
- Department of Physical Electronics-School of Electrical Engineering, Tel Aviv University , Ramat Aviv 69978, Tel Aviv, Israel
| | - Nari Jeon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Yossi Rosenwaks
- Department of Physical Electronics-School of Electrical Engineering, Tel Aviv University , Ramat Aviv 69978, Tel Aviv, Israel
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39
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Jariwala D, Howell SL, Chen KS, Kang J, Sangwan VK, Filippone SA, Turrisi R, Marks TJ, Lauhon LJ, Hersam MC. Hybrid, Gate-Tunable, van der Waals p-n Heterojunctions from Pentacene and MoS2. Nano Lett 2016; 16:497-503. [PMID: 26651229 DOI: 10.1021/acs.nanolett.5b04141] [Citation(s) in RCA: 47] [Impact Index Per Article: 5.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
The recent emergence of a wide variety of two-dimensional (2D) materials has created new opportunities for device concepts and applications. In particular, the availability of semiconducting transition metal dichalcogenides, in addition to semimetallic graphene and insulating boron nitride, has enabled the fabrication of "all 2D" van der Waals heterostructure devices. Furthermore, the concept of van der Waals heterostructures has the potential to be significantly broadened beyond layered solids. For example, molecular and polymeric organic solids, whose surface atoms possess saturated bonds, are also known to interact via van der Waals forces and thus offer an alternative for scalable integration with 2D materials. Here, we demonstrate the integration of an organic small molecule p-type semiconductor, pentacene, with a 2D n-type semiconductor, MoS2. The resulting p-n heterojunction is gate-tunable and shows asymmetric control over the antiambipolar transfer characteristic. In addition, the pentacene/MoS2 heterojunction exhibits a photovoltaic effect attributable to type II band alignment, which suggests that MoS2 can function as an acceptor in hybrid solar cells.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Sarah L Howell
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Kan-Sheng Chen
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Junmo Kang
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Stephen A Filippone
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Riccardo Turrisi
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Tobin J Marks
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States
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40
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Abstract
Two-dimensional (2-D) materials including graphene and transition metal dichalcogenides (TMDs) are an exciting platform for ultrasensitive force and displacement detection in which the strong light-matter coupling is exploited in the optical control of nanomechanical motion. Here we report the optical excitation and displacement detection of a ∼ 3 nm thick MoS2 resonator in the strong-coupling regime, which has not previously been achieved in 2-D materials. Mechanical mode frequencies can be tuned by more than 12% by optical heating, and they exhibit avoided crossings indicative of strong intermode coupling. When the membrane is optically excited at the frequency difference between vibrational modes, normal mode splitting is observed, and the intermode energy exchange rate exceeds the mode decay rate by a factor of 15. Finite element and analytical modeling quantifies the extent of mode softening necessary to control intermode energy exchange in the strong coupling regime.
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Affiliation(s)
- Chang-Hua Liu
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - In Soo Kim
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
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41
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Morkötter S, Jeon N, Rudolph D, Loitsch B, Spirkoska D, Hoffmann E, Döblinger M, Matich S, Finley JJ, Lauhon LJ, Abstreiter G, Koblmüller G. Demonstration of Confined Electron Gas and Steep-Slope Behavior in Delta-Doped GaAs-AlGaAs Core-Shell Nanowire Transistors. Nano Lett 2015; 15:3295-302. [PMID: 25923841 DOI: 10.1021/acs.nanolett.5b00518] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/09/2023]
Abstract
Strong surface and impurity scattering in III-V semiconductor-based nanowires (NW) degrade the performance of electronic devices, requiring refined concepts for controlling charge carrier conductivity. Here, we demonstrate remote Si delta (δ)-doping of radial GaAs-AlGaAs core-shell NWs that unambiguously exhibit a strongly confined electron gas with enhanced low-temperature field-effect mobilities up to 5 × 10(3) cm(2) V(-1) s(-1). The spatial separation between the high-mobility free electron gas at the NW core-shell interface and the Si dopants in the shell is directly verified by atom probe tomographic (APT) analysis, band-profile calculations, and transport characterization in advanced field-effect transistor (FET) geometries, demonstrating powerful control over the free electron gas density and conductivity. Multigated NW-FETs allow us to spatially resolve channel width- and crystal phase-dependent variations in electron gas density and mobility along single NW-FETs. Notably, dc output and transfer characteristics of these n-type depletion mode NW-FETs reveal excellent drain current saturation and record low subthreshold slopes of 70 mV/dec at on/off ratios >10(4)-10(5) at room temperature.
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Affiliation(s)
- S Morkötter
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - N Jeon
- ‡Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, United States
| | - D Rudolph
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - B Loitsch
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - D Spirkoska
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - E Hoffmann
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
- ∥Institute for Advanced Study, Technische Universität München, Garching 85748, Germany
| | - M Döblinger
- §Department of Chemistry, Ludwig-Maximilians-Universität München, Munich 81377, Germany
| | - S Matich
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - J J Finley
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
| | - L J Lauhon
- ‡Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60201, United States
| | - G Abstreiter
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
- ∥Institute for Advanced Study, Technische Universität München, Garching 85748, Germany
| | - G Koblmüller
- †Walter Schottky Institut, Physik Department, and Center of Nanotechnology and Nanomaterials, Technische Universität München, Garching 85748, Germany
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42
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Sangwan VK, Jariwala D, Kim IS, Chen KS, Marks TJ, Lauhon LJ, Hersam MC. Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2. Nat Nanotechnol 2015; 10:403-6. [PMID: 25849785 DOI: 10.1038/nnano.2015.56] [Citation(s) in RCA: 249] [Impact Index Per Article: 27.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/19/2014] [Accepted: 02/23/2015] [Indexed: 05/09/2023]
Abstract
Continued progress in high-speed computing depends on breakthroughs in both materials synthesis and device architectures. The performance of logic and memory can be enhanced significantly by introducing a memristor, a two-terminal device with internal resistance that depends on the history of the external bias voltage. State-of-the-art memristors, based on metal-insulator-metal (MIM) structures with insulating oxides, such as TiO₂, are limited by a lack of control over the filament formation and external control of the switching voltage. Here, we report a class of memristors based on grain boundaries (GBs) in single-layer MoS₂ devices. Specifically, the resistance of GBs emerging from contacts can be easily and repeatedly modulated, with switching ratios up to ∼10(3) and a dynamic negative differential resistance (NDR). Furthermore, the atomically thin nature of MoS₂ enables tuning of the set voltage by a third gate terminal in a field-effect geometry, which provides new functionality that is not observed in other known memristive devices.
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Affiliation(s)
- Vinod K Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - In Soo Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Kan-Sheng Chen
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Tobin J Marks
- 1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - Lincoln J Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | - Mark C Hersam
- 1] Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA [2] Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
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43
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Howell SL, Jariwala D, Wu CC, Chen KS, Sangwan VK, Kang J, Marks TJ, Hersam MC, Lauhon LJ. Investigation of band-offsets at monolayer-multilayer MoS₂ junctions by scanning photocurrent microscopy. Nano Lett 2015; 15:2278-84. [PMID: 25807012 DOI: 10.1021/nl504311p] [Citation(s) in RCA: 66] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2023]
Abstract
The thickness-dependent band structure of MoS2 implies that discontinuities in energy bands exist at the interface of monolayer (1L) and multilayer (ML) thin films. The characteristics of such heterojunctions are analyzed here using current versus voltage measurements, scanning photocurrent microscopy, and finite element simulations of charge carrier transport. Rectifying I-V curves are consistently observed between contacts on opposite sides of 1L/ML junctions, and a strong bias-dependent photocurrent is observed at the junction. Finite element device simulations with varying carrier concentrations and electron affinities show that a type II band alignment at single layer/multilayer junctions reproduces both the rectifying electrical characteristics and the photocurrent response under bias. However, the zero-bias junction photocurrent and its energy dependence are not explained by conventional photovoltaic and photothermoelectric mechanisms, indicating the contributions of hot carriers.
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Affiliation(s)
- Sarah L Howell
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Deep Jariwala
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Chung-Chiang Wu
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Kan-Sheng Chen
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K Sangwan
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Junmo Kang
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J Marks
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
| | - Lincoln J Lauhon
- †Department of Materials Science and Engineering, ‡Department of Chemistry, §Department of Medicine, and ∥Materials Research Center, Northwestern University, Evanston, Illinois 60208, United States
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Jariwala D, Sangwan VK, Seo JWT, Xu W, Smith J, Kim CH, Lauhon LJ, Marks TJ, Hersam MC. Large-area, low-voltage, antiambipolar heterojunctions from solution-processed semiconductors. Nano Lett 2015; 15:416-421. [PMID: 25438195 DOI: 10.1021/nl5037484] [Citation(s) in RCA: 18] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
The emergence of semiconducting materials with inert or dangling bond-free surfaces has created opportunities to form van der Waals heterostructures without the constraints of traditional epitaxial growth. For example, layered two-dimensional (2D) semiconductors have been incorporated into heterostructure devices with gate-tunable electronic and optical functionalities. However, 2D materials present processing challenges that have prevented these heterostructures from being produced with sufficient scalability and/or homogeneity to enable their incorporation into large-area integrated circuits. Here, we extend the concept of van der Waals heterojunctions to semiconducting p-type single-walled carbon nanotube (s-SWCNT) and n-type amorphous indium gallium zinc oxide (a-IGZO) thin films that can be solution-processed or sputtered with high spatial uniformity at the wafer scale. The resulting large-area, low-voltage p-n heterojunctions exhibit antiambipolar transfer characteristics with high on/off ratios that are well-suited for electronic, optoelectronic, and telecommunication technologies.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
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Wood JD, Wells SA, Jariwala D, Chen KS, Cho E, Sangwan VK, Liu X, Lauhon LJ, Marks TJ, Hersam MC. Effective passivation of exfoliated black phosphorus transistors against ambient degradation. Nano Lett 2014; 14:6964-70. [PMID: 25380142 DOI: 10.1021/nl5032293] [Citation(s) in RCA: 677] [Impact Index Per Article: 67.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Unencapsulated, exfoliated black phosphorus (BP) flakes are found to chemically degrade upon exposure to ambient conditions. Atomic force microscopy, electrostatic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy are employed to characterize the structure and chemistry of the degradation process, suggesting that O2 saturated H2O irreversibly reacts with BP to form oxidized phosphorus species. This interpretation is further supported by the observation that BP degradation occurs more rapidly on hydrophobic octadecyltrichlorosilane self-assembled monolayers and on H-Si(111) versus hydrophilic SiO2. For unencapsulated BP field-effect transistors, the ambient degradation causes large increases in threshold voltage after 6 h in ambient, followed by a ∼ 10(3) decrease in FET current on/off ratio and mobility after 48 h. Atomic layer deposited AlOx overlayers effectively suppress ambient degradation, allowing encapsulated BP FETs to maintain high on/off ratios of ∼ 10(3) and mobilities of ∼ 100 cm(2) V(-1) s(-1) for over 2 weeks in ambient conditions. This work shows that the ambient degradation of BP can be managed effectively when the flakes are sufficiently passivated. In turn, our strategy for enhancing BP environmental stability will accelerate efforts to implement BP in electronic and optoelectronic applications.
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Affiliation(s)
- Joshua D Wood
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Graduate Program in Applied Physics, Northwestern University , Evanston, Illinois 60208, United States
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Kim IS, Sangwan VK, Jariwala D, Wood JD, Park S, Chen KS, Shi F, Ruiz-Zepeda F, Ponce A, Jose-Yacaman M, Dravid VP, Marks TJ, Hersam MC, Lauhon LJ. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. ACS Nano 2014; 8:10551-8. [PMID: 25223821 PMCID: PMC4212723 DOI: 10.1021/nn503988x] [Citation(s) in RCA: 127] [Impact Index Per Article: 12.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2014] [Accepted: 09/15/2014] [Indexed: 05/19/2023]
Abstract
Ultrathin transition metal dichalcogenides (TMDCs) of Mo and W show great potential for digital electronics and optoelectronic applications. Whereas early studies were limited to mechanically exfoliated flakes, the large-area synthesis of 2D TMDCs has now been realized by chemical vapor deposition (CVD) based on a sulfurization reaction. The optoelectronic properties of CVD grown monolayer MoS2 have been intensively investigated, but the influence of stoichiometry on the electrical and optical properties has been largely overlooked. Here we systematically vary the stoichiometry of monolayer MoS2 during CVD via controlled sulfurization and investigate the associated changes in photoluminescence and electrical properties. X-ray photoelectron spectroscopy is employed to measure relative variations in stoichiometry and the persistence of MoOx species. As MoS2-δ is reduced (increasing δ), the field-effect mobility of monolayer transistors increases while the photoluminescence yield becomes nonuniform. Devices fabricated from monolayers with the lowest sulfur content have negligible hysteresis and a threshold voltage of ∼ 0 V. We conclude that the electrical and optical properties of monolayer MoS2 crystals can be tuned via stoichiometry engineering to meet the requirements of various applications.
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Affiliation(s)
- In Soo Kim
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinod K. Sangwan
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Deep Jariwala
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Joshua D. Wood
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Spencer Park
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Kan-Sheng Chen
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Fengyuan Shi
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Francisco Ruiz-Zepeda
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States
| | - Arturo Ponce
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States
| | - Miguel Jose-Yacaman
- Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, United States
| | - Vinayak P. Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- International Institute of Nanotechnology, Northwestern University, Evanston, Illinois 60208, United States
| | - Tobin J. Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C. Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Medicine, Northwestern University, Evanston, Illinois 60208, United States
- Address correspondence to ,
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Address correspondence to ,
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Holsteen A, Kim IS, Lauhon LJ. Extraordinary dynamic mechanical response of vanadium dioxide nanowires around the insulator to metal phase transition. Nano Lett 2014; 14:1898-1902. [PMID: 24597551 DOI: 10.1021/nl404678k] [Citation(s) in RCA: 9] [Impact Index Per Article: 0.9] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/03/2023]
Abstract
Nanomechanical resonators provide a compelling platform to investigate and exploit phase transitions coupled to mechanical degrees of freedom because resonator frequencies and quality factors are exquisitely sensitive to changes in state, particularly for discontinuous changes accompanying a first-order phase transition. Correlated scanning fiber-optic interferometry and dual-beam Raman spectroscopy were used to investigate mechanical fluctuations of vanadium dioxide (VO2) nanowires across the first order insulator to metal transition. Unusually large and controllable changes in resonator frequency were observed due to the influences of domain wall motion and anomalous phonon softening on the effective modulus. In addition, extraordinary static and dynamic displacements were generated by local strain gradients, suggesting new classes of sensors and nanoelectromechanical devices with programmable discrete outputs as a function of continuous inputs.
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Affiliation(s)
- Aaron Holsteen
- Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States
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48
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Bernal RA, Filleter T, Connell JG, Sohn K, Huang J, Lauhon LJ, Espinosa HD. In situ electron microscopy four-point electromechanical characterization of freestanding metallic and semiconducting nanowires. Small 2014; 10:725-733. [PMID: 24115555 DOI: 10.1002/smll.201300736] [Citation(s) in RCA: 5] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2013] [Indexed: 06/02/2023]
Abstract
Electromechanical coupling is a topic of current interest in nanostructures, such as metallic and semiconducting nanowires, for a variety of electronic and energy applications. As a result, the determination of structure-property relations that dictate the electromechanical coupling requires the development of experimental tools to perform accurate metrology. Here, a novel micro-electro-mechanical system (MEMS) that allows integrated four-point, uniaxial, electromechanical measurements of freestanding nanostructures in-situ electron microscopy, is reported. Coupled mechanical and electrical measurements are carried out for penta-twinned silver nanowires, their resistance is identified as a function of strain, and it is shown that resistance variations are the result of nanowire dimensional changes. Furthermore, in situ SEM piezoresistive measurements on n-type, [111]-oriented silicon nanowires up to unprecedented levels of ∼7% strain are demonstrated. The piezoresistance coefficients are found to be similar to bulk values. For both metallic and semiconducting nanowires, variations of the contact resistance as strain is applied are observed. These variations must be considered in the interpretation of future two-point electromechanical measurements.
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Affiliation(s)
- Rodrigo A Bernal
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, 60208, USA
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Jariwala D, Sangwan VK, Lauhon LJ, Marks TJ, Hersam MC. Emerging device applications for semiconducting two-dimensional transition metal dichalcogenides. ACS Nano 2014; 8:1102-20. [PMID: 24476095 DOI: 10.1021/nn500064s] [Citation(s) in RCA: 966] [Impact Index Per Article: 96.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
With advances in exfoliation and synthetic techniques, atomically thin films of semiconducting transition metal dichalcogenides have recently been isolated and characterized. Their two-dimensional structure, coupled with a direct band gap in the visible portion of the electromagnetic spectrum, suggests suitability for digital electronics and optoelectronics. Toward that end, several classes of high-performance devices have been reported along with significant progress in understanding their physical properties. Here, we present a review of the architecture, operating principles, and physics of electronic and optoelectronic devices based on ultrathin transition metal dichalcogenide semiconductors. By critically assessing and comparing the performance of these devices with competing technologies, the merits and shortcomings of this emerging class of electronic materials are identified, thereby providing a roadmap for future development.
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Affiliation(s)
- Deep Jariwala
- Department of Materials Science and Engineering, ‡Department of Chemistry, and §Department of Medicine, Northwestern University , Evanston, Illinois 60208, United States
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Padalkar S, Riley JR, Li Q, Wang GT, Lauhon LJ. Lift-out procedures for atom probe tomography targeting nanoscale features in core-shell nanowire heterostructures. ACTA ACUST UNITED AC 2014. [DOI: 10.1002/pssc.201300489] [Citation(s) in RCA: 16] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [What about the content of this article? (0)] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
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