High-Performance All-Inorganic Architecture Perovskite Light-Emitting Diodes Based on Tens-of-Nanometers-Sized CsPbBr3 Emitters in a Carrier-Confined Heterostructure

Developing green perovskite light-emitting diodes (PeLEDs) with a high external quantum efficiency (EQE) and low efficiency roll-off at high brightness remains a critical challenge. Nanostructured emitter-based devices have shown high efficiency but restricted ascending luminance at high current densities, while devices based on large-sized crystals exhibit low efficiency roll-off but face great challenges to high efficiency. Herein, we develop an all-inorganic device architecture combined with utilizing tens-of-nanometers-sized CsPbBr3 (TNS-CsPbBr3) emitters in a carrier-confined heterostructure to realize green PeLEDs that exhibit high EQEs and low efficiency roll-off. A typical type-I heterojunction containing TNS-CsPbBr3 crystals and wide-bandgap Cs4PbBr6 within a grain is formed by carefully controlling the precursor ratio. These heterostructured TNS-CsPbBr3 emitters simultaneously enhance carrier confinement and retain low Auger recombination under a large injected carrier density. Benefiting from a simple device architecture consisting of an emissive layer and an oxide electron-transporting layer, the PeLEDs exhibit a sub-bandgap turn-on voltage of 2.0 V and steeply rising luminance. In consequence, we achieved green PeLEDs demonstrating a peak EQE of 17.0% at the brightness of 36,000 cd m-2, and the EQE remained at 15.7% and 12.6% at the brightness of 100,000 and 200,000 cd m-2, respectively. In addition, our results underscore the role of interface degradation during device operation as a factor in device failure.

Enhanced Performance and High Resistance to Efficiency Degradation of Blue Quantum-Dot Light-Emitting Diodes Using the Lewis Base Blended Hole-Transporting Layers

The distinctive characteristics of blue quantum dots (QDs) such as their deep valence band and large bandgap give rise to an elevated hole injection barrier between the hole transport layers (HTLs) and the QD active layer. This results in an imbalance of carrier transport and injection across the device, leading to a degrading performance in QD light-emitting diodes (QLEDs). In this paper, high-efficiency and low-efficiency degradation blue CdSe/CdS/ZnS QLEDs were fabricated by using the Lewis base, 1,2-bis(diphenylphosphino)ethane (DPPE), blended with poly(9-vinylcarbazole) (PVK) (DPPE:PVK) as HTLs. The device performance of blue QLEDs can be finely adjusted by manipulating the blending ratio between DPPE and PVK. When 4 wt % DPPE was blended with PVK (4 wt % DPPE:PVK) as the HTL, the device achieved its optimal performance. Compared to the device with neat PVK as the HTL, the turn-on voltage of blue QLEDs with the 4 wt % DPPE:PVK HTL is reduced from 3.21 to 2.9 V. The maximum current efficiency (CE) and external quantum efficiency (EQE) of blue QLEDs increase from 2.92 cd A-1 and 5.89% in neat PVK to 5.75 cd A-1 and 11.75% for the 4 wt % DPPE:PVK HTL. Furthermore, the QLEDs incorporating DPPE:PVK HTLs exhibited exceptional resistance to efficiency degradation (EQE = 8.83%@L = 12,000 cd m-2 for 4 wt % DPPE:PVK as the HTL and EQE = 2.80%@L = 12,000 cd m-2 for neat PVK as the HTL). A more in-depth analysis reveals that enhanced device performance results from the chelating and bridging effect of the bidentate ligand Lewis base DPPE. These effects strengthen the binding of free metal ions in the blue QDs, reduce the charge barriers, enhance the contact between the HTLs and the QD active layer, and ultimately improve hole injection.

Realizing High Brightness Quasi-2D Perovskite Light-Emitting Diodes with Reduced Efficiency Roll-Off via Multifunctional Interface Engineering

Quasi-2D perovskites have recently flourished in the field of luminescence due to the quantum-confinement effect and the efficient energy transfer between different n phases resulting in exceptional optical properties. However, owing to the lower conductivity and poor charge injection, quasi-2D perovskite light-emitting diodes (PeLEDs) typically suffer from low brightness and high-efficiency roll-off at high current densities compared to 3D perovskite-based PeLEDs, which is undoubtedly one of the most critical issues in this field. In this work, quasi-2D PeLEDs with high brightness, reduced trap density, and low-efficiency roll-off are successfully demonstrated by introducing a thin layer of conductive phosphine oxide at the perovskite/electron transport layer interface. The results surprisingly show that this additional layer does not improve the energy transfer between multiple quasi-2D phases in the perovskite film, but purely improves the electronic properties of the perovskite interface. On the one hand, it passivates the surface defects of the perovskite film; on the other hand, it promotes electron injection and prevents hole leakage across this interface. As a result, the modified quasi-2D pure Cs-based device shows a maximum brightness of > 70,000 cd m-2 (twice that of the control device), a maximum external quantum efficiency (EQE) of > 10% and a much lower efficiency roll-off at high bias voltages.

Highly Efficient Phosphorescent Organic Light-Emitting Diodes Using Benzo[4',5']imidazo[2',1':2,3]imidazo[4,5,1-jk]carbazole as a Rigid and Effective Electron Acceptor in Bipolar Host

A novel bipolar host architecture was investigated to improve the external quantum efficiency (EQE) of green phosphorescent organic light-emitting diodes (PhOLEDs). The host was developed by incorporating carbazole as a hole-transport unit and fused rigid benzo[4',5']imidazo[2',1':2,3]imidazo[4, 5, 1-jk]carbazole (BzICz) as a new electron transport unit. The primary goal of the BzICz-based host design was to achieve a high triplet energy and bipolar charge transport characteristics. The green PhOLEDs fabricated using the new BzICz and carbazole-based host demonstrated a high EQE of 26.6% due to their high triplet energy and good bipolar charge transporting characteristics.

Efficient Cyan Delayed Fluorescence Luminogen as Sensitizing Host for OLEDs with High Efficiencies and Extremely Low Roll-Offs

Organic light-emitting diodes (OLEDs) using thermally activated delayed fluorescence (TADF) materials to sensitizing conventional fluorescence dopants (CFDs) have attracted intensive research interest due to the extraordinary device performances. Herein, a cyan luminogen (TCz-BP-SFAC) with TADF and aggregation-enhanced emission (AEE) character is developed as a sensitizing host for CFDs. TCz-BP-SFAC owns excellent thermal and electrochemical stabilities, prefers horizontal dipole orientation and demonstrates violent delayed fluorescence with high photoluminescence quantum yields in neat and doped films. It exhibits preeminent electroluminescence (EL) performances with maximum external quantum efficiencies (η_ext s) of 25.1% and 30.0% and very low efficiency roll-offs. TCz-BP-SFAC also performs well as a sensitizing host for CFDs of different colors. When TCz-BP-SFAC sensitizing green emitter TTPA and orange emitter TBRB, the devices achieve high η_ext s of 16.9% and 17.1% as well as very low efficiency roll-offs of 2.4% and 1.2%, respectively. Moreover, TCz-BP-SFAC can serve as a sensitizing host for two-color all-fluorescence white OLEDs, resulting in high η_ext s of ∼18% and very low efficiency roll-offs of ∼5%. The outstanding EL performances predict the great potential of TCz-BP-SFAC as emitter and host in practical display and lighting devices.

Ligand-assisted structure tailoring of highly luminescent Cu-In-Zn-S/ZnS//ZnS quantum dots for bright and stable light-emitting diodes

Harnessing environment-friendly and low-cost multinary Cu-In-Zn-S quantum dots (QDs) as emitters for light-emitting diodes (LEDs) has attracted great attention for display and lighting application. However, suboptimal QD structure is a huge obstacle, which results in serious non-radiative recombination and efficiency roll-off. Herein, we synthesized structure-tailored Cu-In-Zn-S/ZnS//ZnS QDs by improving the reactivity of shell growth by 2-ethylhexanoic acid (EHA) ligands. The EHA-assisted shell growth can boost an extended alloyed layer at the core-shell interface and a smoothed confinement barrier, which effectively passivate the interface defects and suppress Förster resonance energy transfer (FRET) process. These synthesized QDs display a bright photoluminescence emission (quantum yield of 83%) and a larger size of 8.4 nm. Moreover, the resulting LEDs based on the EHA-assisted QDs exhibit a maximum luminance of 8074 cd/m², and a current efficiency of 7.3 cd/A with a low efficiency roll-off. Our results highlight a remarkable ligand strategy to tailor the QD structure for high performance QD-based LEDs.

Efficiency Roll-Off Free Electroluminescence from Monolayer WSe2

Exciton-exciton annihilation (EEA) is a nonradiative process commonly observed in excitonic materials at high exciton densities. Like Auger recombination, EEA degrades luminescence efficiency at high exciton densities and causes efficiency roll-off in light-emitting devices. Near-unity photoluminescence quantum yield has been demonstrated in transition metal dichalcogenides (TMDCs) at all exciton densities with optimal band structure modification mediated by strain. Although the recombination pathways in TMDCs are well understood, the practical application of light-emitting devices has been challenging. Here, we demonstrate a roll-off free electroluminescence (EL) device composed of TMDC monolayers tunable by strain. We show a 2 orders of magnitude EL enhancement from the WSe₂ monolayer by applying a small strain of 0.5%. We attain an internal quantum efficiency of 8% at all injection rates. Finally, we demonstrate transient EL turn-on voltages as small as the band gap. Our approach will contribute to practical applications of roll-off free optoelectronic devices based on excitonic materials.

Highly Efficient Multi-Resonance Thermally Activated Delayed Fluorescence Material with a Narrow Full Width at Half-Maximum of 0.14 eV

Multi-resonance thermally activated delayed fluorescence (MR-TADF) material, which possesses the ability to achieve narrowband emission in organic light-emitting diodes (OLEDs), is of significant importance for wide color gamut and high-resolution display applications. To date, MR-TADF material with narrow full width at half-maximum (FWHM) below 0.14 eV still remains a great challenge. Herein, through peripheral protection of MR framework by phenyl derivatives, four efficient narrowband MR-TADF emitters are successfully designed and synthesized. The introduction of peripheral phenyl-based moieties via a single bond significantly suppresses the high-frequency stretching vibrations and reduces the reorganization energies, accordingly deriving the resulting molecules with small FWMH values around 20 nm/0.11 eV and fast radiative decay rates exceeding 10⁸ s^-1 . The corresponding green OLED based on TPh-BN realizes excellent performance with the maximum external quantum efficiency (EQE) up to 28.9% without utilizing any sensitizing host and a relatively narrow FWHM of 0.14 eV (28 nm), which is smaller than the reported green MR-TADF molecules in current literatures. Especially, the devices show significantly reduced efficiency roll-off and relatively long operational lifetimes among the sensitizer-free MR-TADF devices. These results clearly indicate the promise of this design strategy for highly efficient OLEDs with ultra-high color purity.

Breaking the Efficiency Limit of Deep-Blue Fluorescent OLEDs Based on Anthracene Derivatives

Triplet harvesting is important for the realization of high-efficiency fluorescent organic light-emitting diodes (OLEDs). Triplet-triplet annihilation (TTA) is one triplet-harvesting strategy. However, for blue-emitting anthracene derivatives, the theoretical maximum radiative singlet-exciton ratio generated from the TTA process is known to be 15% in addition to the initially generated singlets of 25%, which is insufficient for high-efficiency fluorescent devices. In this study, nearly 25% of the radiative singlet-exciton ratio is realized by TTA using an anthracene derivative, breaking the theoretical limit. As a result, efficient deep-blue TTA fluorescent devices are developed, exhibiting external quantum efficiencies of 10.2% and 8.6% with Commission Internationale de l'Eclairage color coordinates of (0.134, 0.131) and (0.137, 0.076), respectively. The theoretical model provided herein explains the experimental results considering both the TTA and reverse intersystem crossing to a singlet state from higher triplet states formed by the TTA, clearly demonstrating that the radiative singlet ratio generated from TTA can reach 37.5% (total radiative singlet-exciton ratio: 62.5%), well above 15% (total 40%), despite the molecule having S₁ , T₂  < 2T₁  < Q₁ energy levels, which will lead to the development of high-efficiency fluorescent OLEDs with external quantum efficiencies exceeding 28% if the outcoupling efficiency is 45%.

Two-Channel Space Charge Transfer-Induced Thermally Activated Delayed Fluorescent Materials for Efficient OLEDs with Low Efficiency Roll-Off

Enhancing the reverse intersystem crossing (RISC) process of thermally activated delayed fluorescent (TADF) emitters is an effective approach to realize efficient organic light-emitting diodes (OLEDs) with low efficiency roll-off. In this work, we designed two novel TADF emitters, SAT-DAC and SATX-DAC, via a spiro architecture. Efficient maximum external quantum efficiencies (EQEs) of 22.6 and 20.9% with reduced efficiency roll-off (EQEs of 17.9 and 17.0% at 1000 cd m^-2) were achieved via a "two-RISC-channel" strategy. X-ray diffraction shows close donor (D)/acceptor (A) spacing and suitable D/A orientation in crystals of the two emitters favoring both intra- and intermolecular through-space charge transfer (TSCT) processes. Transient photoluminescence decay measurements show that both emitters have two RISC channels leading to k_ISC^T exceeding 10⁶ s^-1. These results suggest that the "two-RISC-channel" design can be a novel approach for enhancing performance of TADF emitters, in particular at high excitation densities.

Achieving High Efficiency at High Luminance in Fluorescent Organic Light-Emitting Diodes through Triplet-Triplet Fusion Based on Phenanthroimidazole-Benzothiadiazole Derivatives

Achieving high efficiency at high luminance is one of the most important prerequisites towards practical application of any kind of light-emitting diode (LED). Herein, we report highly emissive organic fluorescent molecules based on phenanthroimidazole-benzothiadiazole derivatives capable of maintaining high external quantum efficiency (EQE) at high luminance enabled by triplet-triplet fusion (TTF) in doped organic LEDs. The PIBzP-, PIBzPCN-, and PIBzTPA-based devices showed EQEs of 8.27, 9.15, and 8.64 %, respectively, at luminance of higher than 1000 cd m^-2 , with little efficiency roll-off.

Effect of Optical and Morphological Control of Single-Structured LEC Device

We investigated the performance of single-structured light-emitting electrochemical cell (LEC) devices with Ru(bpy)₃(PF₆)₂ polymer composite as an emission layer by controlling thickness and heat treatment. When the thickness was smaller than 120–150 nm, the device performance decreased because of the low optical properties and non-dense surface properties. On the other hand, when the thickness was over than 150 nm, the device had too high surface roughness, resulting in high-efficiency roll-off and poor device stability. With 150 nm thickness, the absorbance increased, and the surface roughness was low and dense, resulting in increased device characteristics and better stability. The heat treatment effect further improved the surface properties, thus improving the device characteristics. In particular, the external quantum efficiency (EQE) reduction rate was shallow at 100 °C, which indicates that the LEC device has stable operating characteristics. The LEC device exhibited a maximum luminance of 3532 cd/m² and an EQE of 1.14% under 150 nm thickness and 100 °C heat treatment.

Excess Ion-Induced Efficiency Roll-Off in High-Efficiency Perovskite Light-Emitting Diodes

Applying extensively excess ammonium halides in forming perovskites is a widely used approach to achieve high-performance perovskite light-emitting diodes (PeLEDs). However, most of these PeLEDs suffer from severe external quantum efficiency (EQE) roll-off at high current densities, thereby restricting the realization of high-brightness PeLEDs and laser diodes. In this work, we explore the underlying mechanism of the EQE roll-off in high-efficiency formamidinium lead iodide (FAPbI₃)-based PeLEDs. By combining voltage-dependent electrical stress measurements and ex situ ion distribution analysis of PeLEDs, we found that the electric field-driven migration and local segregation of excess iodide ions, originated from nonstoichiometric precursors, trigger the EQE roll-off via promoting imbalanced charge injection. Based on this discovery, we introduced a simple wash-off treatment with chloroform to remove the excess iodides from the perovskite surface and demonstrated that the treatment is highly effective in suppressing the roll-off behavior. By combining the treatment and the use of an ultrathin poly(methyl methacrylate) (PMMA) interlayer, we achieved a high-brightness PeLED with an EQE_max of 19.6%, a critical current density of 1550 mA cm^-2, and a radiance_max of 875 W sr^-1 m^-2. The study reveals the double-edge sword effect of precursor nonstoichiometry and highlights the importance of managing excess ions in perovskite films.

Low Roll-Off and High Stable Electroluminescence in Three-Dimensional FAPbI3 Perovskites with Bifunctional-Molecule Additives

Three-dimensional (3D) perovskites have been demonstrated as an effective strategy to achieve efficient light-emitting diodes (LEDs) at high brightness. However, most 3D perovskite LEDs still suffer from serious efficiency roll-off. Here, using FAPbI₃ as a model system, we find that the main reason for efficiency droop and degradation in 3D perovskite LEDs is defects and the ion migration under electrical stress. By introducing bifunctional-molecule 3-chlorobenzylamine additive into the perovskite precursor solution, the detrimental effects can be significantly suppressed through the growth of high crystalline perovskites and defect passivation. This approach leads to bright near-infrared perovskite LEDs with a peak external quantum efficiency of 16.6%, which sustains 80% of its peak value at a high current density of 460 mA cm^-2, corresponding to a high brightness of 300 W sr^-1 m^-2. Moreover, the device exhibits a record half-lifetime of 49 h under a constant current density of 100 mA cm^-2.

Acceptor-Donor-Acceptor-Type Orange-Red Thermally Activated Delayed Fluorescence Materials Realizing External Quantum Efficiency Over 30% with Low Efficiency Roll-Off

Two new orange-red thermally activated delayed fluorescence (TADF) materials, PzTDBA and PzDBA, are reported. These materials are designed based on the acceptor-donor-acceptor (A-D-A) configuration, containing rigid boron acceptors and dihydrophenazine donor moieties. These materials exhibit a small ΔE_ST of 0.05-0.06 eV, photoluminescence quantum yield (PLQY) as high as near unity, and short delayed exciton lifetime (τ_d ) of less than 2.63 µs in 5 wt% doped film. Further, these materials show a high reverse intersystem crossing rate (k_risc ) on the order of 10⁶ s^-1 . The TADF devices fabricated with 5 wt% PzTDBA and PzDBA as emitting dopants show maximum EQE of 30.3% and 21.8% with extremely low roll-off of 3.6% and 3.2% at 1000 cd m^-2 and electroluminescence (EL) maxima at 576 nm and 595 nm, respectively. The low roll-off character of these materials is analyzed by using a roll-off model and the exciton annihilation quenching rates are found to be suppressed by the fast k_risc and short delayed exciton lifetime. These devices show operating device lifetimes (LT₅₀ ) of 159 and 193 h at 1000 cd m^-2 for PzTDBA and PzDBA, respectively. The high efficiency and low roll-off of these materials are attributed to the good electronic properties originatng from the A-D-A molecular configuration.

Thermally Activated Delayed Fluorescence Emitters with Intramolecular Proton Transfer for High Luminance Solution-Processed Organic Light-Emitting Diodes

We report an organic emitter containing a β-triketone electron acceptor core and phenoxazine as the electron donors (TPXZBM) for solution-processed organic light-emitting diodes (OLEDs). The resulting molecule is very unusual because it shows both thermally activated delayed fluorescence and intramolecular proton transfer. We compare its performance with the previously reported diketone analogue PXZPDO. Solution-processed OLEDs of PXZPDO and TPXZBM show maximum external quantum efficiencies of 20.1 and 12.7%, respectively. The results obtained for the solution-processed PXZPDO-based device are as good as the previously reported evaporated device. At a very high luminance of 10,000 cd m^-2, the efficiencies of the OLEDs were 10.6% for PXZPDO and 4.7% for TPXZBM, demonstrating a relatively low efficiency roll-off for TADF materials. The low efficiency roll-off was rationalized on the basis of the short delayed lifetimes of 1.35 μs for PXZPDO and 1.44 μs for TPXZBM. Our results suggest that intramolecular proton transfer may be useful for the design of OLED materials with a low efficiency roll-off.

Simple-Structured OLEDs Incorporating Undoped Phosphorescent Emitters Within Non-Exciplex Forming Interfaces: Towards Ultraslow Efficiency Roll-Off and Low Driving Voltage for Indoor R/G/B Illumination

To meet the requirement of indoor R/G/B monochrome illumination a simplified OLEDs structure and fabrication process must occur. Herein, a design philosophy of low efficiency roll-off and simple-structure OLEDs incorporating R/G/B phosphorescent ultrathin non-doped emissive layers (EMLs) within non-exciplex forming interfaces a luminescent system by a direct charge trapping mechanism has been reported, which uses bis(2-methyldibenzo[f,h]-quinoxaline)(acetylacetonate)iridium(III) (MDQ)₂Ir(acac), bis(3-phenylpyridin-e)iridium(III) (Ir(ppy)₃), and bis(3,5-difluoro-2 -(2-pyridyl)phenyl-(2-carboxypyridyl) iridiumII) (Firpic) as R/G/B luminescent dyes, respectively. Although the recombination zone is narrow in the designed OLEDs, the efficiency roll-off of the designed OLEDs are unexpectedly slow, due to stable charge trapping of the emitters and are refrained from concentration quenching in relatively low current density, but the luminance meets the requirement of indoor lighting. With a low threshold voltage of 2.9/2.9/3.5 V, the designed R/G/B phosphorescent OLEDs show an efficiency roll-off as low as 7.6/3.2/4.3% for indoor luminance from 10 cd/m² to 1,000 cd/m², respectively. The perspective of R/G/B luminescent dyes on luminous efficiency, chromaticity coordinate drifts, efficiency roll-off, and direct charge trapping has been thoroughly studied. Therefore, our research may help to further develop ideal indoor lighting using a simplified undoped R/G/B OLEDs structure with simultaneous ultraslow efficiency roll-off, low threshold voltage, simplified fabrication process, low reagent consumption, and cost.

High-Efficiency, Non-doped, Pure-Blue Fluorescent Organic Light-Emitting Diodes via Molecular Tuning Regulation of Hot Exciton Excited States

Tremendous efforts have been made on researching triplet-triplet annihilation (TTA) and thermally activated delayed fluorescence (TADF) materials for realizing high-efficiency blue organic light-emitting diodes (OLEDs) through utilizing triplet exciton conversion to the lowest singlet excited state (S₁) from the lowest triplet excited state (T₁). However, hot exciton conversion from the upper triplet energy level state (T_n, n > 1) to the lowest singlet excited state (S₁) is an increasingly promising method for realizing pure-blue non-doped OLEDs with performances comparable to those of TTA and TADF materials. Herein, two pure-blue fluorescent emitters of donor (D)-π-acceptor (A) type, PIAnCz and PIAnPO, were designed and synthesized. The excited-state characteristics of PIAnCz and PIAnPO, confirmed by theoretical calculations and photophysical experiments, demonstrated these materials' hot exciton properties. Based on PIAnCz and PIAnPO as emission layer materials, the fabricated non-doped devices exhibited pure-blue emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.16, 0.12) and (0.16, 0.15), maximum luminescences of 10,484 and 15,485 cd m^-2, and maximum external quantum efficiencies (EQEs) of 10.9 and 8.3%. Besides, at a luminescence of 1000 cd m^-2, the EQEs of PIAnPO-based devices can still be high at 7.7%, and the negligible efficiency roll-off was 6.0%. The device performance of both materials demonstrates their outstanding potential for commercial application.

Ion Migration-Induced Degradation and Efficiency Roll-off in Quasi-2D Perovskite Light-Emitting Diodes

Quasi-2D perovskites have attracted wide attention as the emitter of light-emitting diodes (LEDs) in recent years because of the ease of obtaining high external quantum efficiencies (EQEs). However, the quick degradation under continuous operation and significant EQE roll-off at high current densities are issues that need to be overcome for future practical applications using quasi-2D perovskite LEDs (PeLEDs). In this context, we discuss the mechanism of the degradation and EQE roll-off on the basis of ion migration. The migration of ligand cations though domain boundaries of quasi-2D perovskite films induces the gradual loss of defect passivation at the boundaries, which results in the reversible PeLED degradation and severe EQE roll-off. When the device operation time is long, the mobile cations enter and interact with the electron transport layer, leading to the stage of irreversible PeLED degradation. The device degradation mechanisms we discovered here are constructive for developing quasi-2D PeLEDs with better operational durability.

Thermal Management Enables Bright and Stable Perovskite Light-Emitting Diodes

The performance of lead-halide perovskite light-emitting diodes (LEDs) has increased rapidly in recent years. However, most reports feature devices operated at relatively small current densities (<500 mA cm^-2 ) with moderate radiance (<400 W sr^-1 m^-2 ). Here, Joule heating and inefficient thermal dissipation are shown to be major obstacles toward high radiance and long lifetime. Several thermal management strategies are proposed in this work, such as doping charge-transport layers, optimizing device geometry, and attaching heat spreaders and sinks. Combining these strategies, high-performance perovskite LEDs are demonstrated with maximum radiance of 2555 W sr^-1 m^-2 , peak external quantum efficiency (EQE) of 17%, considerably reduced EQE roll-off (EQE > 10% to current densities as high as 2000 mA cm^-2 ), and tenfold increase in operational lifetime (when driven at 100 mA cm^-2 ). Furthermore, with proper thermal management, a maximum current density of 2.5 kA cm^-2 and an EQE of ≈1% at 1 kA cm^-2 are shown using electrical pulses, which represents an important milestone toward electrically driven perovskite lasers.

Suppressing Efficiency Roll-Off at High Current Densities for Ultra-Bright Green Perovskite Light-Emitting Diodes

Perovskite light-emitting diodes (PeLEDs) have undergone rapid development in the last several years with external quantum efficiencies (EQEs) reaching over 21%. However, most PeLEDs still suffer from severe efficiency roll-off (droop) at high injection current densities, thus limiting their achievable brightness and presenting a challenge to their use in laser diode applications. In this work, we show that the roll-off characteristics of PeLEDs are affected by a combination of charge injection imbalance, nonradiative Auger recombination, and Joule heating. To realize ultrabright and efficient PeLEDs, several strategies have been applied. First, we designed an energy ladder to balance the electron and hole transport. Second, we optimized perovskite materials to possess reduced Auger recombination rates and improved carrier mobility. Third, we replaced glass substrates with sapphire substrates to better dissipate joule heat. Finally, by applying a current-focusing architecture, we achieved PeLEDs with a record luminance of 7.6 Mcd/m². The devices can be operated at very high current densities (J) up to ∼1 kA/cm². Our work suggests a broad application prospect of perovskite materials for high-brightness LEDs and ultimately a potential for solution-processed electrically pumped laser diodes.

Efficient Aggregation-Induced Delayed Fluorescence Luminogens for Solution-Processed OLEDs With Small Efficiency Roll-Off

Purely organic small molecules with thermally-activated delayed fluorescence have a high potential for application in organic light-emitting diodes (OLEDs), but overcoming severe efficiency roll-off at high voltages still remains challenging. In this work, we design and synthesize two new emitters consisting of electron-withdrawing benzoyl and electron-donating phenoxazine and 9,9-dihexylfluorene. Their electronic structures, thermal stability, electrochemical behaviors, photoluminescence property, and electroluminescence performance are thoroughly investigated. These new emitters show weak fluorescence in dilute solution, but they can emit strongly with prominent delayed fluorescence in the aggregated state, indicating the aggregation-induced delayed fluorescence (AIDF) character. The solution-processed OLEDs based on the two emitters show high external quantum efficiency of 14.69%, and the vacuum-deposited OLEDs can also provide comparable external quantum efficiency of 14.86%. Significantly, roll-offs of the external quantum efficiencies are very small (down to 0.2% at 1,000 cd m^-2) for these devices, demonstrating the evidently advanced efficiency stability. These results prove that the purely organic emitters with AIDF properties can be promising to fabricate high-performance solution-processed OLEDs.

Boosting Efficiency and Curtailing the Efficiency Roll-Off in Green Perovskite Light-Emitting Diodes via Incorporating Ytterbium as Cathode Interface Layer

Perovskite light-emitting diodes (PeLEDs) exhibit high external quantum efficiencies (EQEs), emerging as a next-generation lighting and display technology. Nevertheless, they suffer from severe efficiency roll-off at high luminance, particularly in the case of blue and green emissions, which is one of the major bottlenecks in their industrial applications. Here, we attack this problem using a rare-earth metal, Yb, as cathode interface layer (CIL) for green PeLEDs. By adopting a new device configuration of ITO/TFB/FA-based quasi-2D perovskite/TPBi/Yb/Ag, we achieved a peak current efficiency (CE) of 22.3 cd/A with a corresponding EQE of 5.28% and a high maximum luminance of 19 160 cd/m². Importantly, the maximum CE of 22.0 cd/A at 2000 cd/m² slightly decreased to 16.8 cd/A at 5000 cd/m² and maintained a still-decent value of 12.0 cd/A at a high luminance of 10 000 cd/m², exhibiting a remarkably low efficiency roll-off. Our Yb-incorporated devices significantly outperformed the PeLEDs containing conventional CILs, including Mg and Liq, in terms of peak efficiency, efficiency roll-off, and operational lifetime. We attribute this encouraging performance to barrier-free, efficient electron injection enabled by the low work function of Yb (2.6 eV), which led to a high electron current, nearly approaching the hole current in hole-dominant PeLEDs, as confirmed by the single-carrier device measurements. In addition, we also present Yb-incorporated PeLEDs containing Cs-based quasi-2D perovskite as the emissive layer, which displayed an impressive CE of 51.3 cd/A with a corresponding EQE of 16.4% and a maximum luminance of 14 240 cd/m², and still demonstrated a reduced efficiency roll-off comparing to that of the Liq-based equivalent. These results unveil the inspiring prospects of Yb as an efficient CIL for PeLEDs toward high efficiency with curtailed roll-off.

Bright CsPbI3 Perovskite Quantum Dot Light-Emitting Diodes with Top-Emitting Structure and a Low Efficiency Roll-Off Realized by Applying Zirconium Acetylacetonate Surface Modification

Zirconium acetylacetonate used as a co-precursor in the synthesis of CsPbI₃ quantum dots (QDs) increased their photoluminescence quantum efficiency to values over 90%. The top-emitting device structure on a Si substrate with high thermal conductivity (to better dissipate Joule heat generated at high current density) was designed to improve the light extraction efficiency making use of a strong microcavity resonance between the bottom and top electrodes. As a result of these improvements, light-emitting diodes (LEDs) utilizing Zr-modified CsPbI₃ QDs with an electroluminescence at 686 nm showed external quantum efficiency (EQE) of 13.7% at a current density of 108 mA cm^-2, which was combined with low efficiency roll-off (maintaining an EQE of 12.5% at a high current density of 500 mA cm^-2) and a high luminance of 14 725 cd m^-2, and the stability of the devices being repeatedly lit (cycled on and off at high drive current density) has been greatly enhanced.

Thiocyanate-Treated Perovskite-Nanocrystal-Based Light-Emitting Diodes with Insight in Efficiency Roll-Off

Light emitting diodes (LED) based on halide perovskite nanocrystals (NC) have received widespread attention in recent years. In particular, LEDs based on CsPbBr3 NCs were the object of special interest. Here, we report for the first time green LED based on CsPbBr3 NCs treated with ammonium thiocyanate solution before purification with polar solvent. The champion device fabricated based on the treated CsPbBr3 NCs showed high efficiency and high stability during operation as well as during storage. A study on morphology and current distribution of NC films under applied voltages was carried out by conductive atomic force microscopy, giving a hint on efficiency roll-off. The current work provides a facile way to treat sensitive perovskite NCs and to fabricate perovskite NC-based LED with high stability. Moreover, the results shed new light on the relation between film morphology and device performance and on the possible mechanism of efficiency roll-off in NC LED.

A Novel Design Strategy for Suppressing Efficiency Roll-Off of Blue Thermally Activated Delayed Fluorescence Molecules through Donor-Acceptor Interlocking by C-C Bonds

The short material lifetime of thermally activated delayed fluorescence (TADF) technology is a major obstacle to the development of economically feasible, highly efficient, and durable devices for commercial applications. TADF devices are also hampered by insufficient operational stability. In this paper, we report the design, synthesis, and evaluation of new TADF molecules possessing a sterically twisted skeleton by interlocking donor and acceptor moieties through a C–C bond. Compared to C–N-bond TADF molecules, such as CPT2, the C–C-bond TADF molecules showed a large dihedral angle increase by more than 30 times and a singlet–triplet energy-gap decrease to less than 0.22 eV because of the steric hindrance caused by the direct C–C bond connection. With the introduction of a dibenzofuran core structure, devices comprising BMK-T317 and BMK-T318 exhibited a magnificent display performance, especially their external quantum efficiencies, which were as high as 19.9% and 18.8%, respectively. Moreover, the efficiency roll-off of BMK-T318 improved significantly (26.7%). These results indicate that stability of the material can be expected through the reduction of their singlet–triplet splitting and the precise adjustment of dihedral angles between the donor–acceptor skeletons.

Investigation on Thermally Induced Efficiency Roll-Off: Toward Efficient and Ultrabright Quantum-Dot Light-Emitting Diodes

Quantum-dot light-emitting diodes (QLEDs) with high brightness have potential application in lighting and display. The high brightness is realized at high current density (J). However, at high J, the efficiency drops significantly, thereby limiting the achievable brightness. This notorious phenomenon has been known as efficiency roll-off, which is likely caused by the Auger- and/or thermal-induced emission quenching. In this work, we show that the Joule heat generated during device operation significantly affects the roll-off characteristics of QLEDs. To realize ultrabright and efficient QLEDs, the thermal stability of QDs is improved by replacing the conventional oleic acid ligands with 1-dodecanethiol. By further using a substrate with high thermal conductivity, the Joule heat generated at high J is effectively dissipated. Because of the effective thermal management, thermal-induced emission quenching is significantly suppressed, and consequently, the QLEDs exhibit a high external quantum efficiency (EQE) of 16.6%, which is virtually droop-free over a wide range of brightness (e.g., EQE = 16.1% @ 10⁵ cd/m² and 140 mA/cm²). Moreover, due to the reduced efficiency roll-off and enhanced heat dissipation, the demonstrated QLEDs can be operated at a very high J up to 3885 mA/cm², thus enabling the devices to exhibit a record-high brightness of 1.6 × 10⁶ cd/m² and a lumen density of 500 lm/cm². Our work demonstrates the significance of thermal management for the development of droop-free and ultrabright QLED devices for a wide variety of applications including lighting, transparent display, projection display, outdoor digital signage, and phototherapy.

Suppressing Efficiency Roll-Off of TADF Based OLEDs by Constructing Emitting Layer With Dual Delayed Fluorescence

To suppress efficiency roll-off induced by triplet–triplet annihilation (TTA) and singlet–triplet annihilation (STA) in thermally activated delayed fluorescence (TADF) based organic light emitting diodes (OLEDs) is still a challenge. This issue was efficiently addressed by generating dual delayed fluorescence in the emitting layer of OLEDs. A novel TADF compound, PXZ-CMO, featuring a D-A structure was designed and synthesized. By dispersing the emitter into different hosts, devices G1 (MCP host) and G2 (DPEPO host) with identical configurations were carefully fabricated, which showed similar maximum EQE/CE of 12.1%/38.2 cd A⁻¹ and 11.8%/33.1 cd A⁻¹, respectively. Despite severe efficiency roll-off in device G2 with only 6.4% EQE remaining at a luminance of 1,000 cd m⁻², a remarkably reduced efficiency roll-off was attained in device G1, retaining EQE as high as 10.4% at the same luminance of 1,000 cd m⁻². The excellent device performance with reduced roll-off in device G1 should result from the dual delayed fluorescence in the emitting layer, which possesses great advantages in achieving dynamic and adaptive exciton distribution for radiation acceleration and quench suppression.

Rational Molecular Design Overcoming the Long Delayed Fluorescence Lifetime and Serious Efficiency Roll-Off in Blue Thermally Activated Delayed Fluorescent Devices

Blue thermally activated delayed fluorescent (TADF) devices with short excited-state lifetime, high reverse intersystem crossing rate, and low-efficiency roll-off were developed by managing the molecular structure of donor-acceptor-type blue emitters. Three isomers of blue TADF emitters with a diphenyltriazine acceptor and three carbazole donors were synthesized. The position of the donor moieties in the phenyl linker connecting the donor and acceptor moieties was controlled to devise compounds with a short delayed fluorescence lifetime. A blue TADF emitter with three carbazole donors at 2-, 3-, and 4- positions of a phenyl linker shortened the excited state lifetime to 4.1 μs, showed a high external quantum efficiency of 20.4 %, and low efficiency roll-off of less than 10 % at 1000 cd m^-2 . Therefore, a molecular design distorting the donors by aligning them in a consecutive way is useful to resolve the issues of long delayed fluorescence lifetime and efficiency roll-off of blue TADF devices.

Investigation of Energy Transfer in Star-Shaped White Polymer Light-Emitting Devices via the Time-Resolved Photoluminescence

A series of white polymer light-emitting devices (WPLEDs) were fabricated by utilizing star-shaped white-emission copolymers containing tri[1-phenylisoquinolinato-C2,N]iridium (Ir(piq)₃), fluorenone (FO) and poly(9,9-dioctylfluorene) (PFO) as red-, green- and blue-emitting (RGB) components, respectively. In these WPLEDs, a maximum current efficiency of 6.4 cd·A⁻¹ at 20 mA·cm⁻² and Commission Internationale d’Eclairage (CIE) coordinates of (0.33, 0.32) were achieved, and the current efficiency was still kept to 4.2 cd·A⁻¹ at the current density of 200 mA·cm⁻². To investigate energy transfer processes among the three different chromophores of the star-shaped copolymers in these WPLEDs, the time-resolved photoluminescence (PL) spectra were recorded. By comparing the fluorescence decay lifetimes of PFO chromophores in the four star-like white-emitting copolymers, the efficient energy transfer from PFO units to Ir(piq)₃ and FO chromophores was confirmed. From time-resolved PL and the analysis of energy transfer process, the results as follows were proved. Owing to the star-like molecular structure and steric hindrance effect, intermolecular interactions and concentrations quenching in the electroluminescence (EL) process could also be sufficiently suppressed. The efficient energy transfer also reduced intermolecular interactions’ contribution to the enhanced device performances compared to the linear single-polymer white-light systems. Moreover, saturated stable white emission results from the joint of energy transfer and trap-assisted recombination. This improved performance is expected to provide the star-like white-emitting copolymers with promising applications for WPLEDs.

High-Performance Non-doped OLEDs with Nearly 100 % Exciton Use and Negligible Efficiency Roll-Off

Non-doped organic light-emitting diodes (OLEDs) possess merits of higher stability and easier fabrication than doped devices. However, luminescent materials with high exciton use are generally unsuitable for non-doped OLEDs because of severe emission quenching and exciton annihilation in neat films. Herein, we wish to report a novel molecular design of integrating aggregation-induced delayed fluorescence (AIDF) moiety within host materials to explore efficient luminogens for non-doped OLEDs. By grafting 4-(phenoxazin-10-yl)benzoyl to common host materials, we develop a series of new luminescent materials with prominent AIDF property. Their neat films fluoresce strongly and can fully harvest both singlet and triplet excitons with suppressed exciton annihilation. Non-doped OLEDs of these AIDF luminogens exhibit excellent luminance (ca. 100000 cd m^-2 ), outstanding external quantum efficiencies (21.4-22.6 %), negligible efficiency roll-off and improved operational stability. To the best of our knowledge, these are the most efficient non-doped OLEDs reported so far. This convenient and versatile molecular design is of high significance for the advance of non-doped OLEDs.

EQE Climbing Over 6% at High Brightness of 14350 cd/m2 in Deep-Blue OLEDs Based on Hybridized Local and Charge-Transfer Fluorescence

Three deep-blue emitters PPi-Pid, PPi-Xid, and PPi-Mid based on a novel conjugated system phenantroimidazole-π-indolizine have been designed and synthesized. Here, indolizine with appropriate π-conjugation length was used as the acceptor profited from its high-photoluminescence quantum yield and good electron-withdrawing ability. Fluorescent organic light-emitting diodes (OLEDs) based on PPi-Pid, PPi-Xid, and PPi-Mid achieved deep-blue emissions with the Commission Internationale de L'Eclairage coordinates of (0.151, 0.076), (0.155, 0.052), and (0.153, 0.052); high brightness of 14350, 4377, and 4002 cd/m²; and high external quantum efficiencies (EQEs) of 6.01, 3.90, and 4.28%, respectively. Moreover, it is noticeable that all of the devices exhibited efficiencies increasing with brightness. In particular, the PPi-Pid-based device exhibited high EQE over 6% at a high brightness of 14350 cd/m². Such high brightness along with high EQE is very rare whether in deep-blue fluorescent or thermally activated delayed fluorescent OLEDs.

Extremely Low Roll-Off and High Efficiency Achieved by Strategic Exciton Management in Organic Light-Emitting Diodes with Simple Ultrathin Emitting Layer Structure

Phosphorescent organic light-emitting diodes (OLEDs) possess the property of high efficiency but have serious efficiency roll-off at high luminance. Herein, we manufactured high-efficiency phosphorescent OLEDs with extremely low roll-off by effectively locating the ultrathin emitting layer (UEML) away from the high-concentration exciton formation region. The strategic exciton management in this simple UEML architecture greatly suppressed the exciton annihilation due to the expansion of the exciton diffusion region; thus, this efficiency roll-off at high luminance was significantly improved. The resulting green phosphorescent OLEDs exhibited the maximum external quantum efficiency of 25.5%, current efficiency of 98.0 cd A^-1, and power efficiency of 85.4 lm W^-1 and still had 25.1%, 94.9 cd A^-1, and 55.5 lm W^-1 at 5000 cd m^-2 luminance, and retained 24.3%, 92.7 cd A^-1, and 49.3 lm W^-1 at 10 000 cd m^-2 luminance, respectively. Compared with the usual structures, the improvement demonstrated in this work displays potential value in applications.

Highly Efficient TADF Polymer Electroluminescence with Reduced Efficiency Roll-off via Interfacial Exciplex Host Strategy

Solution-processed organic light-emitting diodes (s-OLED) consisting of TAPC/TmPyPB interfacial exciplex host and polymer PAPTC TADF emitter are prepared, simultaneously displaying ultralow voltages (2.50/2.91/3.51/4.91 V at luminance of 1/100/1000/1000 cd m^-2), high efficiencies (14.9%, 50.1 lm W^-1), and extremely low roll-off rates (J₅₀ of 63.16 mA cm^-2, L₅₀ of ca. 15000 cd m^-2). Such performance is distinctly higher than that of pure-PAPTC s-OLED. Compared to pure-PAPTC, the advanced emissive layer structure of TAPC:PAPTC/TmPyPB is unique in much higher PL quantum yield (79.5 vs 36.3%) and nearly 4-fold enhancement in k_RISC of the PAPTC emitter to 1.48 × 10⁷ s^-1.

Highly Simplified Reddish Orange Phosphorescent Organic Light-Emitting Diodes Incorporating a Novel Carrier- and Exciton-Confining Spiro-Exciplex-Forming Host for Reduced Efficiency Roll-off

A novel exciplex-forming host is applied so as to design highly simplified reddish orange light-emitting diodes (OLEDs) with low driving voltage, high efficiency, and an extraordinarily low efficiency roll-off, by combining N,N-10-triphenyl-10H-spiro [acridine-9,9'-fluoren]-3'-amine (SAFDPA) with 4,7-diphenyl-1,10-phenanthroline (Bphen) doped with trivalent iridium complex bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate)iridium(III) (Ir(MDQ)₂(acac)). The reddish orange OLEDs achieve a strikingly high power efficiency (PE) of 31.80 lm/W with an ultralow threshold voltage of 2.24 V which is almost equal to the triplet energy level of the phosphorescent reddish orange emitting dopant. The power efficiency of the device with the exciplex-forming host is enhanced, achieving 36.2% mainly owing to the lower operating voltage by the novel exciplex forming cohost, compared with the reference device (23.54 lm/W). Moreover, the OLEDs show extraordinarily low current efficiency (CE) roll-off to 1.41% at the brightness from 500 to 5000 cd/m² with a maximal CE of 32.87 cd/A (EQE_max = 11.01%). The devices display a good reddish orange color (CIE of (0.628, 0.372) at 500 cd/m²) nearly without color shift with increasing brightness. Co-host architecture phosphorescent OLEDs show a simpler device structure, lower working voltage, and a better efficiency and stability than those of the reference devices without the cohost architecture, which helps to simplify the OLED structure, lower the cost, and popularize OLED technology.

Highly Efficient Deep Blue Organic Light-Emitting Diodes Based on Imidazole: Significantly Enhanced Performance by Effective Energy Transfer with Negligible Efficiency Roll-off

Great efforts have been devoted to develop efficient deep blue organic light-emitting diodes (OLEDs) materials meeting the standards of European Broadcasting Union (EBU) standard with Commission International de L'Eclairage (CIE) coordinates of (0.15, 0.06) for flat-panel displays and solid-state lightings. However, high-performance deep blue OLEDs are still rare for applications. Herein, two efficient deep blue emitters, PIMNA and PyINA, are designed and synthesized by coupling naphthalene with phenanthreneimidazole and pyreneimidazole, respectively. The balanced ambipolar transporting natures of them are demonstrated by single-carrier devices. Their nondoped OLEDs show deep blue emissions with extremely small CIE_y of 0.034 for PIMNA and 0.084 for PyINA, with negligible efficiency roll-off. To take advantage of high photoluminescence quantum efficiency of PIMNA and large fraction of singlet exciton formation of PyINA, doped devices are fabricated by dispersing PyINA into PIMNA. A significantly improved maximum external quantum efficiency (EQE) of 5.05% is obtained through very effective energy transfer with CIE coordinates of (0.156, 0.060), and the EQE remains 4.67% at 1000 cd m^-2, which is among the best of deep blue OLEDs reported matching stringent EBU standard well.

Extremely high-efficiency and ultrasimplified hybrid white organic light-emitting diodes exploiting double multifunctional blue emitting layers

Numerous hybrid white organic light-emitting diodes (WOLEDs) have recently been developed. However, their efficiency is not comparable to that of their best all-phosphorescent WOLED counterparts, and the structures are usually complicated, restricting their further development. Herein, a novel concept is used to achieve a hybrid WOLED, whose crucial feature is the exploitation of double multifunctional blue emitting layers. The three-organic-layer WOLED exhibits a total efficiency of 89.3 and 65.1 lm W^-1 at 100 and 1000 cd m^-2, respectively, making it the most efficient hybrid WOLED reported in the literature so far. Significantly, the efficiencies of hybrid WOLEDs have, for the first time, been demonstrated to be comparable to those of the best all-phosphorescent WOLEDs. In addition, the device exhibits the lowest voltages among hybrid WOLEDs (i.e., 2.4, 2.7 and 3.1 V for 1, 100 and 1000 cd m^-2, respectively). Such remarkable performance achieved from such an ultrasimplified structure opens a new path toward low-cost commercialization.

Achieving Extreme Utilization of Excitons by an Efficient Sandwich-Type Emissive Layer Architecture for Reduced Efficiency Roll-Off and Improved Operational Stability in Organic Light-Emitting Diodes

It has been demonstrated that the efficiency roll-off is generally caused by the accumulation of excitons or charge carriers, which is intimately related to the emissive layer (EML) architecture in organic light-emitting diodes (OLEDs). In this article, an efficient sandwich-type EML structure with a mixed-host EML sandwiched between two single-host EMLs was designed to eliminate this accumulation, thus simultaneously achieving high efficiency, low efficiency roll-off and good operational stability in the resulting OLEDs. The devices show excellent electroluminescence performances, realizing a maximum external quantum efficiency (EQE) of 24.6% with a maximum power efficiency of 105.6 lm W(-1) and a maximum current efficiency of 93.5 cd A(-1). At the high brightness of 5,000 cd m(-2), they still remain as high as 23.3%, 71.1 lm W(-1), and 88.3 cd A(-1), respectively. And, the device lifetime is up to 2000 h at initial luminance of 1000 cd m(-2), which is significantly higher than that of compared devices with conventional EML structures. The improvement mechanism is systematically studied by the dependence of the exciton distribution in EML and the exciton quenching processes. It can be seen that the utilization of the efficient sandwich-type EML broadens the recombination zone width, thus greatly reducing the exciton quenching and increasing the probability of the exciton recombination. It is believed that the design concept provides a new avenue for us to achieve high-performance OLEDs.

Evaporation- and Solution-Process-Feasible Highly Efficient Thianthrene-9,9',10,10'-Tetraoxide-Based Thermally Activated Delayed Fluorescence Emitters with Reduced Efficiency Roll-Off

Two novel evaporation- and solution-process-feasible thermally activated delayed fluorescence emitters, green-light-emission ACRDSO2 and yellow-light-emission PXZDSO2, based on a brand-new electron-acceptor moiety thianthrene-9,9',10,10'-tetraoxide, are developed for organic light-emitting diodes. The solution-processed devices, without any hole-transport layer, exhibit competitive performance and reduced efficiency roll-off compared with corresponding vacuum-deposited devices.

A Solution-Processed Resonance Host for Highly Efficient Electrophosphorescent Devices with Extremely Low Efficiency Roll-off

Solution-processible N-P=O resonance-host molecules are applied successfully in spin-coated phosphorescent light-emitting diodes (PHOLEDs) to selectively and self-adaptively tune the electrical properties for balanced charge transportation. The resonance-molecule-hosted PHOLEDs exhibit a high maximum quantum efficiency of 16.5% and a low efficiency roll-off down to 0.7%, highlighting the significant progress of these solution-processed PHOLEDs with high efficiency and flat efficiency roll-off achieved simultaneously.

Thermally activated delayed fluorescence sensitized phosphorescence: a strategy to break the trade-off between efficiency and efficiency roll-off

Materials with thermally activated delayed fluorescence (TADF) realized 100% internal quantum efficiency (IQE) but suffered significant efficiency roll-off. Here, an exciton dynamics study reveals that materials with TADF may play opposite roles in affecting the efficiency roll-off: decreasing the triplet density due to the fast reverse intersystem crossing, on the one hand, and increasing the triplet density due to the weakened singlet radiation. We show theoretically and experimentally that TADF-sensitized phosphorescence can break this trade-off by exploiting the efficient Förster energy transfer and simultaneously achieve 100% IQE and low efficiency roll-off (with a critical current density of 460 mA cm(-2)).

Highly Efficient Orange and Red Phosphorescent Organic Light-Emitting Diodes with Low Roll-Off of Efficiency using a Novel Thermally Activated Delayed Fluorescence Material as Host

MTXSFCz with thermally activated delayed fluorescence is synthesized. Orange and red phosphorescent organic light-emitting diodes (PHOLEDs) with low efficiency roll-off exhibit external quantum efficiencies (EQE) up to 11.8% and 15.6%. The efficient upconversion from triplet to singlet of the host reduces the triplet density and thus affords a low efficiency roll-off of PHOLEDs.

Influence of shell thickness on the performance of light-emitting devices based on CdSe/Zn1-X CdX S core/shell heterostructured quantum dots

CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.