Wafer-Scale Characterization of 1692-Pixel-Per-Inch Blue Micro-LED Arrays with an Optimized ITO Layer

Wafer-scale blue micro-light-emitting diode (micro-LED) arrays were fabricated with a pixel size of 12 μm, a pixel pitch of 15 μm, and a pixel density of 1692 pixels per inch, achieved by optimizing the properties of e-beam-deposited and sputter-deposited indium tin oxide (ITO). Although the sputter-deposited ITO (S-ITO) films exhibited a densely packed morphology and lower resistivity compared to the e-beam-deposited ITO (E-ITO) films, the forward voltage (VF) values of a micro-LED with the S-ITO films were higher than those with the E-ITO films. The VF values for a single pixel and for four pixels with E-ITO films were 2.82 V and 2.83 V, respectively, while the corresponding values for S-ITO films were 3.50 V and 3.52 V. This was attributed to ion bombardment damage and nitrogen vacancies in the p-GaN layer. Surprisingly, the VF variations of a single pixel and of four pixels with the optimized E-ITO spreading layer from five different regions were only 0.09 V and 0.10 V, respectively. This extremely uniform VF variation is suitable for creating micro-LED displays to be used in AR and VR applications, circumventing the bottleneck in the development of long-lifespan and high-brightness organic LED devices for industrial mass production.

Monolithic Use of Inert Gas for Highly Transparent and Conductive Indium Tin Oxide Thin Films

Due to its excellent electrical conductivity, high transparency in the visible spectrum, and exceptional chemical stability, indium tin oxide (ITO) has become a crucial material in the fields of optoelectronics and nanotechnology. This article provides a thorough analysis of growing ITO thin films with various thicknesses to study the impact of thickness on their electrical, optical, and physical properties for solar-cell applications. ITO was prepared through radio frequency (RF) magnetron sputtering using argon gas with no alteration in temperature or changes in substrate heating, followed with annealing in a tube furnace under inert conditions. An investigation of the influence of thickness on the optical, electrical, and physical properties of the films was conducted. We found that the best thickness for ITO thin films was 100 nm in terms of optical, electrical, and physical properties. To gain full comprehension of the impact on electrical properties, the different samples were characterized using a four-point probe and, interestingly, we found a high conductivity in the range of 1.8-2 × 106 S/m, good resistivity that did not exceed 1-2 × 10-6 Ωm, and a sheet resistance lower than 16 Ω sq-1. The transparency values found using a spectrophotometer reached values beyond 85%, which indicates the high purity of the thin films. Atomic force microscopy indicated a smooth morphology with low roughness values for the films, indicating an adequate transitioning of the charges on the surface. Scanning electron microscopy was used to study the actual thicknesses and the morphology, through which we found no cracks or fractures, which implied excellent deposition and annealing. The X-ray diffraction microscopy results showed a high purity of the crystals, as the peaks (222), (400), (440), and (622) of the crystallographic plane reflections were dominant, which confirmed the existence of the faced-center cubic lattice of ITO. This work allowed us to design a method for producing excellent ITO thin films for solar-cell applications.

Nano-antennas with decoupled transparent leads for optoelectronic studies

Performing electrical measurements on single plasmonic nanostructures presents a challenging task due to the limitations in contacting the structure without disturbing its optical properties. In this work, we show two ways to overcome this problem by fabricating bow-tie nano-antennas with indium tin oxide leads. Indium tin oxide is transparent in the visible range and electrically conducting, but non-conducting at optical frequencies. The structures are prepared by electron beam lithography. Further definition, such as introducing small gaps, is achieved by focused helium ion beam milling. Dark-field reflection spectroscopy characterization of the dimer antennas shows typical unperturbed plasmonic spectra with multiple resonance peaks from mode hybridization.

Wireless Passive Ceramic Sensor for Far-Field Temperature Measurement at High Temperatures

A passive wireless high-temperature sensor for far-field applications was developed for stable temperature sensing up to 1000 °C. The goal is to leverage the properties of electroceramic materials, including adequate electrical conductivity, high-temperature resilience, and chemical stability in harsh environments. Initial sensors were fabricated using Ag for operation to 600 °C to achieve a baseline understanding of temperature sensing principles using patch antenna designs. Fabrication then followed with higher temperature sensors made from (In, Sn) O2 (ITO) for evaluation up to 1000 °C. A patch antenna was modeled in ANSYS HFSS to operate in a high-frequency region (2.5-3.5 GHz) within a 50 × 50 mm2 confined geometric area using characteristic material properties. The sensor was fabricated on Al2O3 using screen printing methods and then sintered at 700 °C for Ag and 1200 °C for ITO in an ambient atmosphere. Sensors were evaluated at 600 °C for Ag and 1000 °C for ITO and analyzed at set interrogating distances up to 0.75 m using ultra-wideband slot antennas to collect scattering parameters. The sensitivity (average change in resonant frequency with respect to temperature) from 50 to 1000 °C was between 22 and 62 kHz/°C which decreased as interrogating distances reached 0.75 m.

Monitoring the Electrochemical Failure of Indium Tin Oxide Electrodes via Operando Ellipsometry Complemented by Electron Microscopy and Spectroscopy

Transparent conductive oxides such as indium tin oxide (ITO) are standards for thin film electrodes, providing a synergy of high optical transparency and electrical conductivity. In an electrolytic environment, the determination of an inert electrochemical potential window is crucial to maintain a stable material performance during device operation. We introduce operando ellipsometry, combining cyclic voltammetry (CV) with spectroscopic ellipsometry, as a versatile tool to monitor the evolution of both complete optical (i.e., complex refractive index) and electrical properties under wet electrochemical operational conditions. In particular, we trace the degradation of ITO electrodes caused by electrochemical reduction in a pH-neutral, water-based electrolyte environment during electrochemical cycling. With the onset of hydrogen evolution at negative bias voltages, indium and tin are irreversibly reduced to the metallic state, causing an advancing darkening, i.e., a gradual loss of transparency, with every CV cycle, while the conductivity is mostly conserved over multiple CV cycles. Post-operando analysis reveals the reductive (loss of oxygen) formation of metallic nanodroplets on the surface. The reductive disruption of the ITO electrode happens at the solid-liquid interface and proceeds gradually from the surface to the bottom of the layer, which is evidenced by cross-sectional transmission electron microscopy imaging and complemented by energy-dispersive X-ray spectroscopy mapping. As long as a continuous part of the ITO layer remains at the bottom, the conductivity is largely retained, allowing repeated CV cycling. We consider operando ellipsometry a sensitive and nondestructive tool to monitor early stage material and property changes, either by tracing failure points, controlling intentional processes, or for sensing purposes, making it suitable for various research fields involving solid-liquid interfaces and electrochemical activity.

Acidic Gas Determination Using Indium Tin Oxide-Based Gas Sensors

This work has presented gas sensors based on indium tin oxide (ITO) for the detection of SO2 and NO2. The ITO gas-sensing material was deposited by radio frequency (RF) magnetron sputtering. The properties of gas sensing could be improved by increasing the ratio of SnO2. The response characteristics of the gas sensor for detecting different concentrations of NO2 and SO2 were investigated. In the detection of NO2, the sensitivity was significantly improved by increasing the SnO2 ratio in ITO by 5%, and the response and recovery time were reduced significantly. However, the sensitivity of the sensor decreased with increasing SO2 concentration. From X-ray photoelectron spectroscopy (XPS) analysis, the gas-sensitive response mechanisms were different in the atmosphere of NO2 and SO2. The NO2 was adsorbed by ITO via physisorption but the SO2 had a chemical reaction with the ITO surface. The gas selectivity, temperature dependence, and environmental humidity of ITO-based gas sensors were systematically analyzed. The high detection sensitivity for acidic gas of the prepared sensor presented great potential for acid rain monitoring.

Wavelength Tunable Infrared Perfect Absorption in Plasmonic Nanocrystal Monolayers

The ability to efficiently absorb light in ultrathin (subwavelength) layers is essential for modern electro-optic devices, including detectors, sensors, and nonlinear modulators. Tailoring these ultrathin films' spectral, spatial, and polarimetric properties is highly desirable for many, if not all, of the above applications. Doing so, however, often requires costly lithographic techniques or exotic materials, limiting scalability. Here we propose, demonstrate, and analyze a mid-infrared absorber architecture leveraging monolayer films of nanoplasmonic colloidal tin-doped indium oxide nanocrystals (ITO NCs). We fabricate a series of ITO NC monolayer films using the liquid-air interface method; by synthetically varying the Sn dopant concentration in the NCs, we achieve spectrally selective perfect absorption tunable between wavelengths of two and five micrometers. We achieve monolayer thickness-controlled coupling strength tuning by varying NC size, allowing access to different coupling regimes. Furthermore, we synthesize a bilayer film that enables broadband absorption covering the entire midwave IR region (λ = 3-5 μm). We demonstrate a scalable platform, with perfect absorption in monolayer films only hundredths of a wavelength in thickness, enabling strong light-matter interaction, with potential applications for molecular detection and ultrafast nonlinear optical applications.

Tungsten-Doped Indium Tin Oxide Thin-Film Transistors for Dual-mode Proximity Sensing Application

Technologies for human-machine interactions are booming now. In order to achieve multifunctional sensing abilities of electronic skins, further developments of various sensors are in urgent demand. Herein, a dual-mode proximity sensor based on an oxide thin-film transistor (TFT) is reported. Although InSnO (ITO) is featured with high mobility, the inherent high carrier concentration limits its use as a channel material for thin-film transistors. Herein, the tungsten element was introduced as a carrier suppressor to develop ITO-based semiconducting materials and devices. TFTs with amorphous tungsten-doped ITO (ITWO) channel layers were fabricated. As for a flat panel display application, the TFT device from 250 °C-annealed ITWO layer with an atomic ratio of In/Sn/W = 86:9:5 presented the optimal device performance with carrier mobility of 11.53 cm2 V-1 s-1, swing subthreshold of 0.66 V dec-1, threshold voltage of -2.18 V, and Ion/Ioff ratio of 3.33 × 107 and much small hysteresis of transfer characteristic. ITWO TFT devices were further developed as dual-mode proximity sensors that could work with both extended-gate and compact configurations, where the drain current was directly related to the surface potential of a charged object and the distance between the sensing end and the object, enabling the proximity sensing of charged stimuli. For extended-gate-configured proximity sensing, a charged object modulated the formation of a conductive channel at the semiconductor/SiO2 interface, while this conductive channel occurred at the semiconductor/air interface for compact-configured sensing. Formation of the conductive channel of the compact transistor was modulated by the electric field component in the direction perpendicular to the interface, and the drain current was sensitive to the orientation of the approaching object, which implied the capacity of angle sensing to the approach of a charged object. This work further emphasizes that the basic device performance should be optimized according to its specific application scenarios rather than only considering the requirements of the panel display.

Light-driven reversible charge transfers from ITO nanocrystals

The combination of semiconductors and redox active molecules for light-driven energy storage systems has emerged as a powerful solution for the exploitation of solar batteries. On account of this, transparent conductive oxide (TCO) nanocrystals (NCs) demonstrated to be interesting materials, thanks to the photo-induced charge accumulation enabling light harvesting and storage. The charge transfer process after light absorption, at the base of the proper use of these semiconductors, is a key step, often resulting in non-reversible transformations of the chemicals involved. However, if considering the photocharging through TCO NCs not only as a charge provider for the system but potentially as part of the storage role, the reversible transformation of the redox compound represents a crucial aspect. In this paper, we explore the possible interaction of indium tin oxide (ITO) NCs and typical redox mediators commonly employed in catalytic applications with a twofold scope of enhancing or supporting the light-induced charge accumulation on the metal oxide NC side and controlling the reversibility of the whole process. The work presented focuses on the effect of the redox properties on the doped metal oxide response, both from the stability point of view and the photodoping performance, by monitoring the changes in the optical behavior of ITO/redox hybrid systems upon ultraviolet illumination.

Flexible, Transparent, and Cytocompatible Nanostructured Indium Tin Oxide Thin Films for Bio-optoelectronic Applications

Electrical stimulation has been used successfully for several decades for the treatment of neurodegenerative disorders, including motor disorders, pain, and psychiatric disorders. These technologies typically rely on the modulation of neural activity through the focused delivery of electrical pulses. Recent research, however, has shown that electrically triggered neuromodulation can be further enhanced when coupled with optical stimulation, an approach that can benefit from the development of novel electrode materials that combine transparency with excellent electrochemical and biological performance. In this study, we describe an electrochemically modified, nanostructured indium tin oxide/poly(ethylene terephthalate) (ITO/PET) surface as a flexible, transparent, and cytocompatible electrode material. Electrochemical oxidation and reduction of ITO/PET electrodes in the presence of an ionic liquid based on d-glucopyranoside and bistriflamide units were performed, and the electrochemical behavior, conductivity, capacitance, charge transport processes, surface morphology, optical properties, and cytocompatibility were assessed in vitro. It has been shown that under selected conditions, electrochemically modified ITO/PET films remained transparent and highly conductive and were able to enhance neural cell survival and neurite outgrowth. Consequently, electrochemical modification of ITO/PET electrodes in the presence of an ionic liquid is introduced as an effective approach for tailoring the properties of ITO for advanced bio-optoelectronic applications.

Hierarchically Doped Plasmonic Nanocrystal Metamaterials

Assembling plasmonic nanocrystals in regular superlattices can produce effective optical properties not found in homogeneous materials. However, the range of these metamaterial properties is limited when a single nanocrystal composition is selected for the constituent meta-atoms. Here, we show how continuously varying doping at two length scales, the atomic and nanocrystal scales, enables tuning of both the frequency and bandwidth of the collective plasmon resonance in nanocrystal-based metasurfaces, while these features are inextricably linked in single-component superlattices. Varying the mixing ratio of indium tin oxide nanocrystals with different dopant concentrations, we use large-scale simulations to predict the emergence of a broad infrared spectral region with near-zero permittivity. Experimentally, tunable reflectance and absorption bands are observed, owing to in- and out-of-plane collective resonances. These spectral features and the predicted strong near-field enhancement establish this multiscale doping strategy as a powerful new approach to designing metamaterials for optical applications.

A Broadband Photodetector Based on PbS Quantum Dots and Graphene with High Responsivity and Detectivity

A high-efficiency photodetector consisting of colloidal PbS quantum dots (QDs) and single-layer graphene was prepared in this research. In the early stage, PbS QDs were synthesized and characterized, and the results showed that the product conformed with the characteristics of high-quality PbS QDs. Afterwards, the photodetector was derived through steps, including the photolithography and etching of indium tin oxide (ITO) electrodes and the graphene active region, as well as the spin coating and ligand substitution of the PbS QDs. After application testing, the photodetector, which was prepared in this research, exhibited outstanding properties. Under visible and near-infrared light, the highest responsivities were up to 202 A/W and 183 mA/W, respectively, and the highest detectivities were up to 2.24 × 10¹¹ Jones and 2.47 × 10⁸ Jones, respectively, with light densities of 0.56 mW/cm² and 1.22 W/cm², respectively. In addition to these results, the response of the device and the rise and fall times for the on/off illumination cycles showed its superior performance, and the fastest response times were approximately 0.03 s and 1.0 s for the rise and fall times, respectively. All the results illustrated that the photodetector based on PbS and graphene, which was prepared in this research, possesses the potential to be applied in reality.

Photonic Characterisation of Indium Tin Oxide as a Function of Deposition Conditions

Indium tin oxide (ITO) has recently gained prominence as a photonic nanomaterial, for example, in modulators, tuneable metasurfaces and for epsilon-near-zero (ENZ) photonics. The optical properties of ITO are typically described by the Drude model and are strongly dependent on the deposition conditions. In the current literature, studies often make several assumptions to connect the optically measured material parameters to the electrical properties of ITO, which are not always clear, nor do they necessarily apply. Here, we present a comprehensive study of the structural, electrical, and optical properties of ITO and showed how they relate to the deposition conditions. We use guided mode resonances to determine the dispersion curves of the deposited material and relate these to structural and electrical measurements to extract all relevant material parameters. We demonstrate how the carrier density, mobility, plasma frequency, electron effective mass, and collision frequency vary as a function of deposition conditions, and that the high-frequency permittivity (ϵ∞) can vary significantly from the value of ϵ∞ = 3.9 that many papers simply assume to be a constant. The depth of analysis we demonstrate allows the findings to be easily extrapolated to the photonic characterisation of other transparent conducting oxides (TCOs), whilst providing a much-needed reference for the research area.

A Study on Optimal Indium Tin Oxide Thickness as Transparent Conductive Electrodes for Near-Ultraviolet Light-Emitting Diodes

This research study thoroughly examines the optimal thickness of indium tin oxide (ITO), a transparent electrode, for near-ultraviolet (NUV) light-emitting diodes (LEDs) based on InGaN/AlGaInN materials. A range of ITO thicknesses from 30 to 170 nm is investigated, and annealing processes are performed to determine the most favorable figure of merit (FOM) by balancing transmittance and sheet resistance in the NUV region. Among the films of different thicknesses, an ITO film measuring 110 nm, annealed at 550 °C for 1 min, demonstrates the highest FOM. This film exhibits notable characteristics, including 89.0% transmittance at 385 nm, a sheet resistance of 131 Ω/□, and a contact resistance of 3.1 × 10^-3 Ω·cm². Comparing the performance of NUV LEDs using ITO films of various thicknesses (30, 50, 70, 90, 130, 150, and 170 nm), it is observed that the NUV LED employing ITO with a thickness of 110 nm achieves a maximum 48% increase in light output power at 50 mA while maintaining the same forward voltage at 20 mA.

Comparison of the Degradation Effect of Methylene Blue for ZnO Nanorods Synthesized on Silicon and Indium Tin Oxide Substrates

In the context of ZnO nanorods (NRs) grown on Si and indium tin oxide (ITO) substrates, this study aimed to compare their degradation effect on methylene blue (MB) at different concentrations. The synthesis process was carried out at a temperature of 100 °C for 3 h. After the synthesis of ZnO NRs, their crystallization was analyzed using X-ray diffraction (XRD) patterns. The XRD patterns and top-view SEM observations demonstrate variations in synthesized ZnO NRs when different substrates were used. Furthermore, cross-sectional observations reveal that ZnO NRs synthesized on an ITO substrate exhibited a slower growth rate compared to those synthesized on a Si substrate. The as-grown ZnO NRs synthesized on the Si and ITO substrates exhibited average diameters of 110 ± 40 nm and 120 ± 32 nm and average lengths of 1210 ± 55 nm and 960 ± 58 nm, respectively. The reasons behind this discrepancy are investigated and discussed. Finally, synthesized ZnO NRs on both substrates were utilized to assess their degradation effect on methylene blue (MB). Photoluminescence spectra and X-ray photoelectron spectroscopy were employed to analyze the quantities of various defects of synthesized ZnO NRs. The effect of MB degradation after 325 nm UV irradiation for different durations can be evaluated using the Beer-Lambert law, specifically by analyzing the 665 nm peak in the transmittance spectrum of MB solutions with different concentrations. Our findings reveal that ZnO NRs synthesized on an ITO substrate exhibited a higher degradation effect on MB, with a rate of 59.5%, compared to NRs synthesized on a Si substrate, which had a rate of 73.7%. The reasons behind this outcome, elucidating the factors contributing to the enhanced degradation effect are discussed and proposed.

Surface Oxygen Vacancy Inducing Li-Ion-Conducting Percolation Network in Composite Solid Electrolytes for All-Solid-State Lithium-Metal Batteries

Composite solid electrolytes (CSEs) are newly emerging components for all-solid-state Li-metal batteries owing to their excellent processability and compatibility with the electrodes. Moreover, the ionic conductivity of the CSEs is one order of magnitude higher than the solid polymer electrolytes (SPEs) by incorporation of inorganic fillers into SPEs. However, their advancement has come to a standstill owing to unclear Li-ion conduction mechanism and pathway. Herein, the dominating effect of the oxygen vacancy (O_vac ) in the inorganic filler on the ionic conductivity of CSEs is demonstrated via Li-ion-conducting percolation network model. Based on density functional theory, indium tin oxide nanoparticles (ITO NPs) are selected as inorganic filler to determine the effect of O_vac on the ionic conductivity of the CSEs. Owing to the fast Li-ion conduction through the O_vac inducing percolation network on ITO NP-polymer interface, LiFePO₄ /CSE/Li cells using CSEs exhibit a remarkable capacity in long-term cycling (154 mAh g^-1 at 0.5C after 700 cycles). Moreover, by modifying the O_vac concentration of ITO NPs via UV-ozone oxygen-vacancy modification, the ionic conductivity dependence of the CSEs on the surface O_vac from the inorganic filler is directly verified.

Transparent and Flexible Composite Films with Excellent Electromagnetic Interference Shielding and Thermal Insulating Performance

As the working environment becomes more complex, the visualization of windows in electronic devices increasingly requires transparent and flexible electromagnetic interference (EMI) shielding films. There is a need for materials with EMI shielding properties, while maintaining excellent high light transmission and good thermal insulation. However, the preparation of such multifunctional materials remains challenging due to the respective mechanisms of action of the different properties. Herein, a multilayer structure strategy is proposed to fabricate transparent and flexible indium tin oxide (ITO)/silver nanowire (AgNW) composite films, achieving a multifunctional integration of high light transmission, strong EMI shielding, and good thermal insulation properties of the composite films. Simultaneously, the layered structure was designed and the potential optimization mechanism of the EMI shielding performance of the composite film was analyzed, providing great flexibility for the preparation of transparent composite films. The combination of excellent EMI shielding performance, outstanding near-infrared shielding performance, and high light transmittance makes the ITO/AgNW (IA) composite films promising for abundant potential applications.

Non-Conjugated Copoly(Arylene Ether Ketone) for the Current-Collecting System of a Solar Cell with Indium Tin Oxide Electrode

The mechanism of charge carrier transport in the indium tin oxide (ITO)/polymer/Cu structure is studied, where thin films of copoly(arylene ether ketone) with cardo fluorene moieties are used. This copoly(arylene ether ketone) is non-conjugated polymer which has the properties of electronic switching from the insulating to the highly conductive state. The dependence on the polymer film thickness of such parameters as the potential barrier at the ITO/polymer interface, the concentration of charge carriers, and their mobility in the polymer is studied for the first time. The study of this system is of interest due to the proven potential of using the synthesized polymer in the contact system of a silicon solar cell with an ITO top layer. The parameters of charge carriers and ITO/polymer barrier are evaluated based on the analysis of current-voltage characteristics of ITO/polymer/Cu structure within the injection current models and the Schottky model. The thickness of the polymer layer varies from 50 nm to 2.1 µm. The concentration of intrinsic charge carriers increases when decreasing the polymer film thickness. The charge carrier mobility depends irregularly on the thickness, showing a maximum of 9.3 × 10^-4 cm²/V s at 210 nm and a minimum of 4.7 × 10^-11 cm²/V s at 50 nm. The conductivity of polymer films first increases with a decrease in thickness from 2.1 µm to 210 nm, but then begins to decrease upon transition to the globular structure of the films at smaller thicknesses. The dependence of the barrier height on polymer thickness has a minimum of 0.28 eV for films 100-210 nm thick. The influence of the supramolecular structure and surface charge field of thin polymer films on the transport of charge carriers is discussed.

Highly Responsive Plasmon Modulation in Dopant-Segregated Nanocrystals

Electron transfer to and from metal oxide nanocrystals (NCs) modulates their infrared localized surface plasmon resonance (LSPR), revealing fundamental aspects of their photophysics and enabling dynamic optical applications. We synthesized and chemically reduced dopant-segregated Sn-doped In₂O₃ NCs, investigating the influence of radial dopant segregation on LSPR modulation and near-field enhancement (NFE). We found that core-doped NCs show large LSPR shifts and NFE change during chemical titration, enabling broadband modulation in LSPR energy of over 1000 cm^-1 and of peak extinction over 300%. Simulations reveal that the evolution of the LSPR spectra during chemical reduction results from raising the surface Fermi level and increasing the donor defect density in the shell region. These results establish dopant segregation as a useful strategy to engineer the dynamic optical modulation in plasmonic semiconductor NC heterostructures going beyond what is possible with conventional plasmonic metals.

Facile Functionalization of Carbon Electrodes for Efficient Electroenzymatic Hydrogen Production

Enzymatic electrocatalysis holds promise for new biotechnological approaches to produce chemical commodities such as molecular hydrogen (H₂). However, typical inhibitory limitations include low stability and/or low electrocatalytic currents (low product yields). Here we report a facile single-step electrode preparation procedure using indium-tin oxide nanoparticles on carbon electrodes. The subsequent immobilization of a model [FeFe]-hydrogenase from Clostridium pasteurianum ("CpI") on the functionalized carbon electrode permits comparatively large quantities of H₂ to be produced in a stable manner. Specifically, we observe current densities of >8 mA/cm² at -0.8 V vs the standard hydrogen electrode (SHE) by direct electron transfer (DET) from cyclic voltammetry, with an onset potential for H₂ production close to its standard potential at pH 7 (approximately -0.4 V vs. SHE). Importantly, hydrogenase-modified electrodes show high stability retaining ∼92% of their electrocatalytic current after 120 h of continuous potentiostatic H₂ production at -0.6 V vs. SHE; gas chromatography confirmed ∼100% Faradaic efficiency. As the bioelectrode preparation method balances simplicity, performance, and stability, it paves the way for DET on other electroenzymatic reactions as well as semiartificial photosynthesis.

The Integration of Reference Electrode for ISFET Ion Sensors Using Fluorothiophenol-Treated rGO

Ion-sensitive field-effect transistors (ISFETs) detect specific ions in solutions that enable straightforward, fast, and inexpensive sensors compared to other benchtop equipment. However, a conventional reference electrode (RE) such as Ag/AgCl is limited on the miniaturization of the sensor. We introduce reduced graphene oxide (rGO), which serves as a new RE, when fluorinated (F-rGO) using fluorothiophenol through the π-π interaction. The circular RE is integrated between a fabricated microscale two-channel ISFET, which is capable of detecting two kinds of ions on an indium tin oxide (ITO) thin-film substrate, using the photolithography process. F-rGO bound to this circular region to function as an RE in the ISFETs sensor, which operated stably in solution and showed a relatively high transconductance (g_m) value (1.27 mS), low drift characteristic (3.2 mV), and low hysteresis voltage (±0.05 mV). It detected proton (H⁺) ions in a buffer solution with high sensitivity (67.1 mV/pH). We successfully detected Na⁺ (62.1 mV/dec) and K⁺ (57.6 mV/dec) ions in human patient urine using a two-channel ISFET with the F-rGO RE. The F-rGO RE will be a suitable component in the fabrication of low-cost, mass-produced, and disposable ISFETs sensors.

ITO Thin Films for Low-Resistance Gas Sensors

Indium tin oxide thin films were deposited by magnetron sputtering on ceramic aluminum nitride substrates and were annealed at temperatures of 500 °C and 600 °C. The structural, optical, electrically conductive and gas-sensitive properties of indium tin oxide thin films were studied. The possibility of developing sensors with low nominal resistance and relatively high sensitivity to gases was shown. The resistance of indium tin oxide thin films annealed at 500 °C in pure dry air did not exceed 350 Ohms and dropped by about 2 times when increasing the annealing temperature to 100 °C. Indium tin oxide thin films annealed at 500 °C were characterized by high sensitivity to gases. The maximum responses to 2000 ppm hydrogen, 1000 ppm ammonia and 100 ppm nitrogen dioxide for these films were 2.21 arbitrary units, 2.39 arbitrary units and 2.14 arbitrary units at operating temperatures of 400 °C, 350 °C and 350 °C, respectively. These films were characterized by short response and recovery times. The drift of indium tin oxide thin-film gas-sensitive characteristics during cyclic exposure to reducing gases did not exceed 1%. A qualitative model of the sensory effect is proposed.

Stable Indium Tin Oxide with High Mobility

Indium tin oxide (ITO) is widely used in a variety of optoelectronic devices, occupying a huge market share of $1.7 billion. However, traditional preparation methods such as magnetron sputtering limit the further development of ITO in terms of high preparation temperature (>350 °C) and low mobility (∼30 cm2 V-1 s-1). Herein, we develop an adjustable process to obtain high-mobility ITO with both appropriate conductivity and infrared transparency at room temperature by a reactive plasma deposition (RPD) system, which has many significant advantages including low-ion damage, low deposition temperature, large-area deposition, and high throughput. By optimizing the oxygen flow during the RPD process, ITO films with a high mobility of 62.1 cm2 V-1 s-1 and a high average transparency of 89.7% at 800-2500 nm are achieved. Furthermore, the deposited ITO films present a smooth surface with a small roughness of 0.3 nm. The stability of ITO films to heat, humidity, radiation, and alkali environments is also investigated with carrier mobility average changes of 19.3, 4.4, and 4.7%, showcasing strong environmental adaptability. We believe that stable ITO films with high mobility prepared by a low-damage deposition method will be widely used in full spectral optoelectronic applications, such as tandem solar cells, infrared photodetectors, light-emitting diodes, etc.

Investigating Formate, Sulfate, and Halide Anions in Reversible Zinc Electrodeposition Dynamic Windows

Reversible metal electrodeposition (RME) is an emerging and promising method for designing dynamic windows with electrically controllable transmission, excellent color neutrality, and wide dynamic range. Zn is a viable option for metal-based dynamic windows due to its fast switching kinetics and reversibility despite its very negative deposition voltage. In this manuscript, we study the effect of the supporting electrolyte anions for Zn electrodeposition on transparent tin-doped indium oxide. Through systematic additions or removal of components of the electrolytes, we are able to establish a link between the anions and the effectiveness of Zn RME. This insight allows us to design practical two-electrode 25 cm² Zn dynamic windows that switch to <1% within 20 s. Lastly, we demonstrate that the accumulation of Zn(OH)₂ species on the working electrode degrades the optical contrast of Zn windows during long-term cycling. However, the elimination of these species through acid immersion allows the windows to cycle at least 500 times. Reversible Zn electrodeposition in the presence of a polyethylene glycol additive further improves the cycle life to greater than 1000 cycles. Taken together, these studies highlight important design principles for the construction of robust dynamic windows based on Zn RME.

Bipolar Switching Characteristics of Transparent WOX-Based RRAM for Synaptic Application and Neuromorphic Engineering

In this work, we evaluate the resistive switching (RS) and synaptic characteristics of a fully transparent resistive random-access memory (T-RRAM) device based on indium-tin-oxide (ITO) electrodes. Here, we fabricated ITO/WO_X/ITO capacitor structure and incorporated DC-sputtered WO_X as the switching layer between the two ITO electrodes. The device shows approximately 77% (including the glass substrate) of optical transmittance in visible light and exhibits reliable bipolar switching behavior. The current-voltage (I-V) curve is divided into two types: partial and full curves affected by the magnitude of the positive voltage during the reset process. In the partial curve, we confirmed that the retention could be maintained for more than 10⁴ s and the endurance for more than 300 cycles could be stably secured. The switching mechanism based on the formation/rupture of the filament is further explained through the extra oxygen vacancies provided by the ITO electrodes. Finally, we examined the responsive potentiation and depression to check the synaptic characteristics of the device. We believe that the transparent WO_X-based RRAM could be a milestone for neuromorphic devices as well as future non-volatile transparent memory.

Gold-Nanoparticle-Coated Magnetic Beads for ALP-Enzyme-Based Electrochemical Immunosensing in Human Plasma

A simple and sensitive AuNP-coated magnetic beads (AMB)-based electrochemical biosensor platform was fabricated for bioassay. In this study, AuNP-conjugated magnetic particles were successfully prepared using biotin-streptavidin conjugation. The morphology and structure of the nanocomplex were characterized by scanning electron microscopy (SEM) with energy-dispersive X-ray analysis (EDX) and UV-visible spectroscopy. Moreover, cyclic voltammetry (CV) was used to investigate the effect of AuNP-MB on alkaline phosphatase (ALP) for electrochemical signal enhancement. An ALP-based electrochemical (EC) immunoassay was performed on the developed AuNP-MB complex with indium tin oxide (ITO) electrodes. Subsequently, the concentration of capture antibodies was well-optimized on the AMB complex via biotin-avidin conjugation. Lastly, the developed AuNP-MB immunoassay platform was verified with extracellular vesicle (EV) detection via immune response by showing the existence of EGFR proteins on glioblastoma multiforme (GBM)-derived EVs (10⁸ particle/mL) spiked in human plasma. Therefore, the signal-enhanced ALP-based EC biosensor on AuNP-MB was favorably utilized as an immunoassay platform, revealing the potential application of biosensors in immunoassays in biological environments.

Tuning structural properties, morphology and magnetic characteristics of nanostructured Ni-Co-Fe/ITO ternary alloys by galvanostatic pretreatment process

In this research, the structural properties, surface morphology, and magnetic characteristics of nanostructured ternary ferromagnetic alloys grown by a cost-effective and effortless two-step electrochemical deposition method on indium tin oxide (ITO) substrates with and without a galvanostatic pretreatment process (GPP) were examined. The GPP was applied at various pretreatment current densities (PCDs) such as -10, -20, and - 30 mA/cm² . The effect of the PCD on the Ni, Co, and Fe contents is found to be insignificant and all resultant Ni-Co-Fe thin films show an abnormal co-deposition. The films have nano-sized crystallites ranging from 17.3 to 19.6 nm and showed a face-centered cubic structure with the [111] preferential growth. Compared to the non-GPP applied Ni-Co-Fe film, growing the ternary Ni-Co-Fe film on ITO at the PCD of -30 mA/cm² causes an improvement in the crystal quality and a reduction in the particle size from 150 ± 50 to 70 ± 20 nm. A decrement in the surface roughness and coercivity was also achieved by applying the GPP at the PCD of -30 mA/cm² , but the opposite is true for the GPP performed at the PCD of -10 mA/cm² . The GPP has an effect on the magnetic Squareness Ratio (SQR), but the influence of the PCD on the SQR parameter is negligible. The obtained findings reveal that the properties of the Ni-Co-Fe/ITO ternary alloys can be tuned through the GPP applied in various PCDs. HIGHLIGHTS: • The effect of the PCD on the Ni, Co, and Fe contents is found to be insignificant. • The films have nano-sized crystallites and showed a face-centered cubic structure with the [111] preferential growth. • The analysis reveals that the GPP changes the crystal quality, H_c parameter, surface roughness, and particle size of the films. • The GPP has an effect on the magnetic squareness ratio (SQR), but the influence of the PCD on the SQR parameter is negligible. • The films had nano-sized crystallites ranging from 17.3 to 19.6 nm. • The films were ferromagnetic, and the H_c and SQR parameters of the films ranged from 30.2 to 42.7 Oe and from 8.8% to 19.6%.

Optimization of Electrode Patterns for an ITO-Based Digital Microfluidic through the Finite Element Simulation

Indium tin oxide (ITO)-based digital microfluidics (DMF) with unique optical and electrical properties are promising in the development of integrated, automatic and portable analytical systems. The fabrication technique using laser direct etching (LDE) on ITO glass has the advantages of being rapid, low cost and convenient. However, the fabrication resolution of LDE limits the minimum line width for patterns on ITO glasses, leading to a related wider lead wire for the actuating electrodes of DMF compared with photolithography. Therefore, the lead wire of electrodes could affect the droplet motion on the digital microfluidic chip due to the increased contact line with the droplet. Herein, we developed a finite element model of a DMF with improved efficiency to investigate the effect of the lead wire. An optimized electrode pattern was then designed based on a theoretical analysis and validated by a simulation, which significantly decreased the deformation of the droplets down to 0.012 mm. The performance of the optimized electrode was also verified in an experiment. The proposed simulation method could be further extended to other DMF systems or applications to provide an efficient approach for the design and optimization of DMF chips.

Invisible Thermoplasmonic Indium Tin Oxide Nanoparticle Ink for Anti-counterfeiting Applications

In this study, we present a thermoplasmonic transparent ink based on a colloidal dispersion of indium tin oxide (ITO) nanoparticles, which can offer several advantages as anti-counterfeiting technology. The custom ink could be directly printed on several substrates, and it is transparent under visible light but is able to generate heat by absorption of NIR radiation. Dynamic temperature mapping of the printed motifs was performed by using a thermal camera while irradiating the samples with an IR lamp. The printed samples presented fine features (in the order of 75 μm) and high thermal resolution (of about 250 μm). The findings are supported by thermal finite-element simulations, which also allow us to explore the effect of different substrate characteristics on the thermal readout. Finally, we built a demonstrator comprising a QR Code invisible to the naked eye, which became visible in thermal images under NIR radiation. The high transparency of the printed ink and the high speed of the thermal reading (figures appear/disappear in less than 1 s) offer an extremely promising strategy toward low-cost, scalable production of photothermally active invisible labels.

Contact Conductance Governs Metallicity in Conducting Metal Oxide Nanocrystal Films

Although colloidal nanoparticles hold promise for fabricating electronic components, the properties of nanoparticle-derived materials can be unpredictable. Materials made from metallic nanocrystals exhibit a variety of transport behavior ranging from insulators, with internanocrystal contacts acting as electron transport bottlenecks, to conventional metals, where phonon scattering limits electron mobility. The insulator-metal transition (IMT) in nanocrystal films is thought to be determined by contact conductance. Meanwhile, criteria are lacking to predict the characteristic transport behavior of metallic nanocrystal films beyond this threshold. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we assess the IMT as it depends on contact conductance and show how contact conductance is also key to predicting the temperature-dependence of conductivity in metallic films. The results establish a phase diagram for electron transport behavior that can guide the creation of metallic conducting materials from nanocrystal building blocks.

All-Ceramic Passive Wireless Temperature Sensor Realized by Tin-Doped Indium Oxide (ITO) Electrodes for Harsh Environment Applications

In this work, an all-ceramic passive wireless inductor-capacitor (LC) resonator was presented for stable temperature sensing up to 1200 °C in air. Instead of using conventional metallic electrodes, the LC resonators are modeled and fabricated with thermally stable and highly electroconductive ceramic oxide. The LC resonator was modeled in ANSYS HFSS to operate in a low-frequency region (50 MHz) within 50 × 50 mm geometry using the actual material properties of the circuit elements. The LC resonator was composed of a parallel plate capacitor coupled with a planar inductor deposited on an Al₂O₃ substrate using screen-printing, and the ceramic pattern was sintered at 1250 °C for 4 h in an ambient atmosphere. The sensitivity (average change in resonant frequency with respect to temperature) from 200-1200 °C was ~170 kHz/°C. The temperature-dependent electrical conductivity of the tin-doped indium oxide (ITO, 10% SnO₂ doping) on the quality factor showed an increase of Q_f from 36 to 43 between 200 °C and 1200 °C. The proposed ITO electrodes displayed improved sensitivity and quality factor at elevated temperatures, proving them to be an excellent candidate for temperature sensing in harsh environments. The microstructural analysis of the co-sintered LC resonator was performed using a scanning electron microscope (SEM) which showed that there are no cross-sectional and topographical defects after several thermal treatments.

Synthesis and Characterization of Indium Tin Oxide Nanowires with Surface Modification of Silver Nanoparticles by Electrochemical Method

In this study, indium tin oxide nanowires (ITO NWs) with high density and crystallinity were synthesized by chemical vapor deposition (CVD) via a vapor–liquid–solid (VLS) route; the NWs were decorated with 1 at% and 3 at% silver nanoparticles on the surface by a unique electrochemical method. The ITO NWs possessed great morphologies with lengths of 5~10 μm and an average diameter of 58.1 nm. Characterization was conducted through transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscope (XPS) to identify the structure and composition of the ITO NWs. The room temperature photoluminescence (PL) studies show that the ITO NWs were of visible light-emitting properties, and there were a large number of oxygen vacancies on the surface. The successful modification of Ag was confirmed by TEM, XRD and XPS. PL analysis reveals that there was an extra Ag signal at around 1.895 eV, indicating the potential application of Ag-ITO NWs as nanoscale optical materials. Electrical measurements show that more Ag nanoparticles on the surface of ITO NWs contributed to higher resistivity, demonstrating the change in the electron transmission channel of the Ag-ITO NWs. ITO NWs and Ag-ITO NWs are expected to enhance the performance of electronic and optoelectronic devices.

High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Enhanced Self-Assembled Monolayer Surface Coverage by ALD NiO in p-i-n Perovskite Solar Cells

Metal halide perovskites have attracted tremendous attention due to their excellent electronic properties. Recent advancements in device performance and stability of perovskite solar cells (PSCs) have been achieved with the application of self-assembled monolayers (SAMs), serving as stand-alone hole transport layers in the p-i-n architecture. Specifically, phosphonic acid SAMs, directly functionalizing indium-tin oxide (ITO), are presently adopted for highly efficient devices. Despite their successes, so far, little is known about the surface coverage of SAMs on ITO used in PSCs application, which can affect the device performance, as non-covered areas can result in shunting or low open-circuit voltage. In this study, we investigate the surface coverage of SAMs on ITO and observe that the SAM of MeO-2PACz ([2-(3,6-dimethoxy-9H-carbazol-9-yl)ethyl]phosphonic acid) inhomogeneously covers the ITO substrate. Instead, when adopting an intermediate layer of NiO between ITO and the SAM, the homogeneity, and hence the surface coverage of the SAM, improve. In this work, NiO is processed by plasma-assisted atomic layer deposition (ALD) with Ni(MeCp)₂ as the precursor and O₂ plasma as the co-reactant. Specifically, the presence of ALD NiO leads to a homogeneous distribution of SAM molecules on the metal oxide area, accompanied by a high shunt resistance in the devices with respect to those with SAM directly processed on ITO. At the same time, the SAM is key to the improvement of the open-circuit voltage of NiO + MeO-2PACz devices compared to those with NiO alone. Thus, the combination of NiO and SAM results in a narrower distribution of device performance reaching a more than 20% efficient champion device. The enhancement of SAM coverage in the presence of NiO is corroborated by several characterization techniques including advanced imaging by transmission electron microscopy (TEM), elemental composition quantification by Rutherford backscattering spectrometry (RBS), and conductive atomic force microscopy (c-AFM) mapping. We believe this finding will further promote the usage of phosphonic acid based SAM molecules in perovskite PV.

Reagentless Sensing of Vancomycin Using an Indium Tin Oxide Electrode Grafted with Molecularly Imprinted Polymer including Ferrocenyl Group

Vancomycin (VCM) is a first-line antimicrobial agent against methicillin-resistant Staphylococcus aureus, a cause of nosocomial infections. Therapeutic drug monitoring is strongly recommended for VCM-based chemotherapy. The authors attempted to develop a simple VCM sensor based on molecularly imprinted polymer (MIP), which can be used with simple operations. Methacrylic acid (MAA), acrylamide, methylenebisacrylamide, and allylamine carboxypropionate-3-ferrocene (ACPF) were copolymerized in the presence of VCM and grafted from the surface of indium-tin oxide (ITO) to obtain MIP-coated electrodes. The MIP-grafted ITO electrode was used for differential pulse voltammetry (DPV) measurements in a buffer solution containing VCM or whole bovine blood. The obtained current depends on the VCM concentration with high linearity. The dynamic range covered the therapeutic range (20–40 μg/mL) of the VCM but was almost insensitive to teicoplanin, which has a similar structure to VCM. The ITO electrodes grafted by the same procedure except for omitting either VCM or APCF were not sensitive to VCM. The sensitivity of the MIP electrodes to VCM in whole blood and buffered saline, but the background current in blood was higher than that in saline. This high background current was also seen in the deproteinized plasma. Thus, the current is probably originated from the oxidation of low molecular weight reducing agents in the blood. The MIP-grafted ITO electrode using ACPF as a functional monomer would be a promising highly selective sensor for real-time monitoring of VCM with proper correction of the background current.

Flexible Artificial Synapses with a Biocompatible Maltose-Ascorbic Acid Electrolyte Gate for Neuromorphic Computing

As constructing hardware technology is widely regarded as an important step toward realizing brain-like computers and artificial intelligence systems, the development of artificial synaptic electronics that can simulate biological synaptic functions is an emerging research field. Among the various types of artificial synapses, synaptic transistors using an electrolyte as the gate electrode have been implemented as the high capacitance of the electrolyte increases the driving current and lowers operating voltages. Here, transistors using maltose-ascorbic acid as the proton-conducting electrolyte are proposed. A novel electrolyte composed of maltose and ascorbic acid, both of which are biocompatible, enables the migration of protons. This allows the channel conductance of the transistors to be modulated with the gate input pulse voltage, and fundamental synaptic functions including excitatory postsynaptic current, paired-pulse facilitation, long-term potentiation, and long-term depression can be successfully emulated. Furthermore, the maltose-ascorbic acid electrolyte (MAE)-gated synaptic transistors exhibit high mechanical endurance, with near-linear conductivity modulation and repeatability after 1000 bending cycles under a curvature radius of 5 mm. Benefitting from its excellent biodegradability and biocompatibility, the proposed MAE has potential applications in environmentally friendly, economical, and high-performance neuromorphic electronics, which can be further applied to dermal electronics and implantable electronics in the future.

Ultrasensitive and Selective Impedimetric Determination of Prostate Specific Membrane Antigen Based on Di-Succinimide Functionalized Polythiophene Covered Cost-Effective Indium Tin Oxide

A new and ultrasensitive impedimetric biosensor fabricated by using conjugated di-succinimide substituted polythiophene (P(ThidiSuc)) polymer modified indium tin oxide electrode is developed for the first time to detect the prostate specific membrane antigen (PSMA). The polymer P(Thi-diSuc) is synthesized by using a simple way and used in the fabrication of the proposed biosensor. The synthesized polymer contains di-succinimide groups, which offers covalent immobilization of PSMA specific antibodies. The developed strategy shortens the biosensor fabrication steps, because these active groups bind covalently to the amino ends of PSMA specific antibodies and this reaction does not require any crosslinking agent. Various characterization studies like impedimetric and voltammetric measurements, and morphological analyses are utilized to confirm the successful development of the biosensor. Under optimum conditions, the biosensing ability of the PSMA determination has a wide linear determination range from 0.015 to 14.4 pg mL^-1 , as well as a low limit of detection of 6.4 fg mL^-1 and a high sensitivity of 1.36 kohm pg^-1 mL cm^-2 . Furthermore, the proposed biosensor is able to measure the PSMA antigen in real human serums, which offers that it is a simple, low-cost, and sensitive tool with excellent potential for application in the quantification of PSMA.

CsPbX3 -ITO (X = Cl, Br, I) Nano-Heterojunctions: Voltage Tuned Positive to Negative Photoresponse

All-Inorganic perovskite CsPbX₃ (X = Cl, Br, I) quantum dots (QDs) have attracted tremendous attention in the past few years for their appealing performance in optoelectronic applications. Major properties of CsPbX₃ QDs include the positive photoconductivity (PPC) and the defect tolerance of the in-band trap states. Here it is reported that when hybridizing CsPbX₃ QDs with indium tin oxide (ITO) nanocrystals to form CsPbX₃ -ITO nano-heterojunctions (NHJs), a voltage tuned photoresponse-from PPC to negative photoconductivity (NPC) transform-is achieved in lateral drain-source structured ITO/CsPbX₃ -ITO-NHJs/ITO devices. A model combining exciton, charge separation, transport, and most critical the voltage driven electron filling of the in-band trap states with drain-source voltage (V_DS ) above a threshold, is proposed to understand this unusual PPC-NPC transform mechanism, which is different from that of any known nanomaterial system. This finding exhibits potentials for developing devices such as photodetectors, optoelectronic switches, and memories.

Room-Temperature Solution-Processed 0D/1D Bilayer Electrodes for Translucent CsPbBr3 Perovskite Photovoltaics

Materials and processing of transparent electrodes (TEs) are key factors to creating high-performance translucent perovskite solar cells. To date, sputtered indium tin oxide (ITO) has been a general option for a rear TE of translucent solar cells. However, it requires a rather high cost due to vacuum process and also typically causes plasma damage to the underlying layer. Therefore, we introduced TE based on ITO nanoparticles (ITO-NPs) by solution processing in ambient air without any heat treatment. As it reveals insufficient conductivity, Ag nanowires (Ag-NWs) are additionally coated. The ITO-NPs/Ag-NW (0D/1D) bilayer TE exhibits a better figure of merit than sputtered ITO. After constructing CsPbBr₃ perovskite solar cells, the device with 0D/1D TE offers similar average visible transmission with the cells with sputtered ITO. More interestingly, the power conversion efficiency of 0D/1D TE device was 5.64%, which outperforms the cell (4.14%) made with sputtered-ITO. These impressive findings could open up a new pathway for the development of low-cost, translucent solar cells with quick processing under ambient air at room temperature.

Indium Tin Oxide Branched Nanowire and Poly(3-hexylthiophene) Hybrid Structure for a Photorechargeable Supercapacitor

We report a photorechargeable supercapacitor that can convert solar energy to chemical energy and store it. The supercapacitor is composed of indium tin oxide branched nanowires (ITO BRs) and poly(3-hexylthiophene) (P3HT) semiconducting polymers. ITO BRs showed electrical double layer capacitive characteristics that originated from the unique porous and self-connected network structure. The hybrid structure of ITO BR/P3HT exhibited spontaneous light harvesting, energy conversion, and charge storage. As a result, photocharging/discharging of ITO BR/P3HT showed an areal capacitance of 2.44 mF/cm² at a current density of 0.02 mA/cm². The proof-of-concept photorechargeable device, composed of ITO BRs, ITO BR/P3HT, and Na₂SO₄/polyvinyl acetate gel electrolyte, generated a photovoltage as high as 0.28 V and stored charge effectively for tens of seconds. The combination of dual functions in a single hybrid material may achieve breakthrough advances.

Highly conductive and transparent electrospun indium tin oxide nanofibers calcined by microwave plasma

In this work, indium tin oxide (ITO) nanofibers have been prepared by electrospinning of polymers and post-growth microwave plasma calcination (MPC). Interestingly, compared to traditional calcination in furnace, MPC can accelerate the degradation of high polar polymers and improve adhesion of ITO nanofibers to the sapphire substrate. Further characterizations reveal that the ITO nanofibers with diameters of 100-150 nm prepared by MPC at 600 °C can reach a low sheet resistance of 269 Ω/sq and a high transmittance of 90.7% at 550 nm simultaneously, which has not been previously reported by others. Our results show that the efficient MPC method has great potential in preparation of metal-oxide nanofibers for electrical and optical applications.

Optically transparent electrodes to study living cells: A mini review

The use of electrochemical methods to study living systems, including cells, has been of interest to researchers for a long time. Thus, controlling the polarization of the electrode contacting living cells, one can influence, for example, their proliferation or the synthesis of specific proteins. Moreover, the electrochemical approach formed the basis of the biocompatibility improvement of the materials contacting with body tissues that use in carbon hemosorbents and implants development. It became possible to reach a fundamentally new level in the study of cell activity with the introduction of optically transparent electrodes in this area. The advantage of the using of optically transparent electrodes is the possibility of simultaneous analysis of living cells by electrochemical and microscopic methods. The use of such materials allowed approaching to the study of the influence of the electrode potential on adhesion activity and morphology of the different cell types (HeLa cells, endothelial cell, etc.) more detailed. There are a negligible number of publications in this area despite the advantages of the usage of optically transparent electrodes to study living cells. This mini-review is devoted to some aspects of the interaction of living cells with conductive materials and current advances in the use of optically transparent electrodes for the study of living cells, as well as the prospects for their use in cellular technologies.

Preparation of Ordered Nanoporous Indium Tin Oxides with Large Crystallites and Individual Control over Their Thermal and Electrical Conductivities

Metal oxides are considered suitable candidates for thermoelectric materials owing to their high chemical stabilities. The formation of ordered nanopores within these materials, which decreases thermal conductivity (κ), has attracted significant interest. However, the electrical conductivity (σ) of reported nanoporous metal oxides is low, owing to electron scattering at the thin pore walls and many grain boundaries formed by small crystallites. Therefore, a novel synthesis method that can control pore walls while forming relatively large crystallites to reduce κ and retain σ is required. In this study, we used indium tin oxide (ITO), which is a typical example among metal oxides with high σ. Nanoporous ITOs with large crystallite sizes of several hundred nanometers and larger were successfully prepared using indium chloride as a source of indium. The pore sizes were varied using colloidal silica nanoparticles with different particle sizes as templates. The crystal phase and nanoporous structure of ITO were preserved after spark plasma sintering at 723 K and 80 MPa. The κ was significantly lower than that reported for bulk ITO due to the phonon scattering caused by the nanoporous structure and thin pore walls. There was a limited decrease in σ even with high porosity. These findings show that κ and σ are independently controllable through the precise control of the structure. The control of the thickness of the pore walls at tens of nanometers was effective for the selective scattering of phonons, while almost retaining electron mobility. The remarkable preservation of σ was attributed to the large crystallites that maintained paths for electron conduction and decreased electron scattering at the grain boundaries.

Studies of Indium Tin Oxide-Based Sensing Electrodes in Potentiometric Zirconia Solid Electrolyte Gas Sensors

A zirconia-based potentiometric solid electrolyte gas sensor with internal solid state reference was used to study the response behavior of platinum cermet and indium tin oxide sensing electrodes. Target gases included both oxygen and carbon monoxide in nitrogen-based sample gas mixtures. It was found that with the indium tin oxide sensing electrode, the low-temperature behavior is mainly a result of incomplete equilibration due to contaminations of the electrode surface. On the other hand, some of these contaminant species have been identified as being pivotal for the higher carbon monoxide sensitivity of the indium tin oxide sensing electrode as compared to platinum cermet electrodes.

Plasma Synthesis of Advanced Metal Oxide Nanoparticles and Their Applications as Transparent Conducting Oxide Thin Films

This article reviews and summarizes work recently performed in this laboratory on the synthesis of advanced transparent conducting oxide nanopowders by the use of plasma. The nanopowders thus synthesized include indium tin oxide (ITO), zinc oxide (ZnO) and tin-doped zinc oxide (TZO), aluminum-doped zinc oxide (AZO), and indium-doped zinc oxide (IZO). These oxides have excellent transparent conducting properties, among other useful characteristics. ZnO and TZO also has photocatalytic properties. The synthesis of these materials started with the selection of the suitable precursors, which were injected into a non-transferred thermal plasma and vaporized followed by vapor-phase reactions to form nanosized oxide particles. The products were analyzed by the use of various advanced instrumental analysis techniques, and their useful properties were tested by different appropriate methods. The thermal plasma process showed a considerable potential as an efficient technique for synthesizing oxide nanopowders. This process is also suitable for large scale production of nano-sized powders owing to the availability of high temperatures for volatilizing reactants rapidly, followed by vapor phase reactions and rapid quenching to yield nano-sized powder.

Selective Anchoring Groups for Molecular Electronic Junctions with ITO Electrodes

Indium tin oxide (ITO) is an attractive substrate for single-molecule electronics since it is transparent while maintaining electrical conductivity. Although it has been used before as a contacting electrode in single-molecule electrical studies, these studies have been limited to the use of carboxylic acid terminal groups for binding molecular wires to the ITO substrates. There is thus the need to investigate other anchoring groups with potential for binding effectively to ITO. With this aim, we have investigated the single-molecule conductance of a series of eight tolane or "tolane-like" molecular wires with a variety of surface binding groups. We first used gold-molecule-gold junctions to identify promising targets for ITO selectivity. We then assessed the propensity and selectivity of carboxylic acid, cyanoacrylic acid, and pyridinium-squarate to bind to ITO and promote the formation of molecular heterojunctions. We found that pyridinium squarate zwitterions display excellent selectivity for binding to ITO over gold surfaces, with contact resistivity comparable to that of carboxylic acids. These single-molecule experiments are complemented by surface chemical characterization with X-ray photoelectron spectroscopy, quartz crystal microbalance, contact angle determination, and nanolithography using an atomic force miscroscope. Finally, we report the first density-functional theory calculations involving ITO electrodes to model charge transport through ITO-molecule-gold heterojunctions.

Transparent Molecular Adhesive Enabling Mechanically Stable ITO Thin Films

With rapid advances in flexible electronics, transparent conductive electrodes (TCEs) have also been significantly developed as alternatives to the conventional indium tin oxide (ITO)-based material systems that exhibit low mechanical flexibility. Nanomaterial-based alternating materials, such as graphene, nanowire, and nanomesh, exhibit remarkable properties for TCE-based applications, such as high electrical conductivity, high optical transparency, and high mechanical stability. However, these nanomaterial-based systems lack scalability, which is a key requirement for practical applications, and exhibit a size-dependent property variation and inhomogeneous surface uniformity that limit reliable properties over a large area. Here, we exploited a conventional ITO-based material platform; however, we incorporated a transparent molecular adhesive, 4-aminopyridine (4-AP), to improve mechanical flexibility. While the presence of 4-AP barely affected optical transmittance and sheet resistance, it improved interfacial adhesion between the substrate and ITO as well as formed a wavy surface, which could improve the mechanical flexibility. Under various mechanical tests, ITO/4-AP/poly(ethylene terephthalate) (PET) exhibited remarkably improved mechanical flexibility as compared with that of ITO/PET. Furthermore, ITO/4-AP/PET was utilized for a flexible Joule heater application having spatial uniformity of heat generation, voltage-dependent temperature control, and mechanical flexibility under repeated bending tests. This molecular adhesive could overcome the current limitations of material systems for flexible electronics.

Evaluation of Indium Tin Oxide for Gas Sensing Applications: Adsorption/Desorption and Electrical Conductivity Studies on Powders and Thick Films

By combining results of adsorption/desorption measurements on powders and electrical conductivity studies on thick and thin films, the interaction of indium tin oxide with various ambient gas species and carbon monoxide as potential target gas was studied between room temperature and 700 °C. The results show that the indium tin oxide surfaces exhibit a significant coverage of water-related and carbonaceous adsorbates even at temperatures as high as 600 °C. Specifically carbonaceous species, which are also produced under carbon monoxide exposure, show a detrimental effect on oxygen adsorption and may impair the film’s sensitivity to a variety of target gases if the material is used in gas sensing applications. Consequently, the operating temperature of an ITO based chemoresistive carbon monoxide sensor should be selected within a range where the decomposition and desorption of these species proceeds rapidly, while the surface oxygen coverage is still high enough to provide ample species for target gas interaction.

Avoiding Voltage-Induced Degradation in PET-ITO-Based Flexible Electrochromic Devices

The cycling stability of flexible electrochromic devices (ECDs) under humid atmospheres is limited by irreversible indium tin oxide (ITO) reduction. A strategy to limit this degradation was developed and tested for model ECDs based on a sidechain-modified poly(3,4-ethylene dioxythiophene) (PEDOT) derivative and Prussian blue (PB). This work reveals that the cycling stability is reduced by dissolution of the ITO thin films and formation of metallic indium particles on the surface of the ITO layers. The ITO degradation strongly depends on the applied electrode potentials in combination with moisture ingress into the ECDs. To avoid ITO reduction in ECDs, efforts were made to adjust the electrode potentials. ECDs equipped with an auxiliary reference electrode were set up to gather knowledge on the actual electrode potentials. By adjusting the electrode charge density ratio, it was possible to narrow the overall cell voltage window to an extent in which irreversible ITO reduction no longer occurs. Detailed investigation of ECDs with the optimized cell configuration (charge density ratio) showed that the overall device performance with regard to visible light transmittance change and response time is not impaired and that the cycling stability under humid atmosphere (90% rH) is dramatically improved. Thus, the proposed strategy offers an excellent perspective for the commercialization of flexible ECDs upon their enhanced durability.

Device Postannealing Enabling over 12% Efficient Solution-Processed Cu2 ZnSnS4 Solar Cells with Cd2+ Substitution

Kesterite Cu₂ ZnSnS₄ is a promising photovoltaic material containing low-cost, earth-abundant, and stable semiconductor elements. However, the highest power conversion efficiency of thin-film solar cells based on Cu₂ ZnSnS₄ is only about 11% due to low open-circuit voltage and fill factor mainly caused by antisite defects and unfavorable heterojunction interface. In this work, a postannealing procedure is proposed to complete a Cd-alloyed Cu₂ ZnSnS₄ device. The postannealing to complete the device significantly enhances the performance of the indium tin oxide and promotes the moderate interdiffusion of elements between the layers in the device. As a result of the diffusion of Cu, Zn, In, and Sn, the interfacial electron and hole densities are improved, leading to the achievement of a suitable band alignment for carrier transport. The postannealing also reduces the interface traps and deep-level defects, contributing to decreased nonradiative recombination. Therefore, the open-circuit voltage and fill factor are both improved, and an efficiency over 12% for pure sulfide-based kesterite thin-film solar cells is obtained.