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Wang M, Liu S, Wei A, Luo T, Wen X, Li MY, Lu H. Effective Charge Collection of Electron Transport Layers for High-Performance Quantum Dot Infrared Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38690767 DOI: 10.1021/acsami.4c02069] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2024]
Abstract
Infrared (IR) solar cells, capable of converting low-energy IR photons to electron-hole pairs, are promising optoelectronic devices by broadening the utilization range of the solar spectrum to the short-wavelength IR region. The emerging PbS colloidal quantum dot (QD) IR solar cells attract much attention due to their tunable band gaps in the IR region, potential multiple exciton generation, and facile solution processing. In PbS QD solar cells, ZnO is commonly utilized as an electron transport layer (ETL) to establish a depleted heterostructure with a QD photoactive layer. However, band gap shrinkage of large PbS QDs makes it necessary to tailor the behaviors of the ZnO ETL for efficient carrier extraction in the devices. Herein, the characteristics of ZnO ETL are efficiently and flexibly tailored to match the QD layer by handily adjusting the postannealing process of ZnO ETL. With a suitable temperature, the well-matched energy level alignment and suppressed trap states are simultaneously achieved in the ZnO ETL, effectively reducing the nonradiative recombination and accelerating the electron injection from the QD layer to ETL. As a consequence, a high-performance PbS QD photovoltaic device with power conversion efficiencies (PCEs) of 10.09% and 1.37% is obtained under AM 1.5 and 1100 nm filtered solar illumination, demonstrating a simple and effective approach for achieving high-performance IR photoelectric devices.
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Affiliation(s)
- Meng Wang
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Sisi Liu
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Aoshen Wei
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Tianyu Luo
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Xiaoyan Wen
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Ming-Yu Li
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
- Yangtzi Delta Region Institute of University of Electronic Science and Technology of China, Huzhou, Zhejiang 313098, China
| | - Haifei Lu
- School of Science, Wuhan University of Technology, Wuhan, Hubei 430070, China
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2
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Lee J, Kim B, Kim C, Lee MH, Kozakci I, Cho S, Kim B, Lee SY, Kim J, Oh J, Lee JY. Unlocking the Potential of Colloidal Quantum Dot/Organic Hybrid Solar Cells: Band Tunable Interfacial Layer Approach. ACS APPLIED MATERIALS & INTERFACES 2023; 15:39408-39416. [PMID: 37555937 DOI: 10.1021/acsami.3c08419] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/10/2023]
Abstract
Hybrid colloidal quantum dot (CQD)/organic architectures are promising candidates for emerging optoelectronic devices having high performance and inexpensive fabrication. For unlocking the potential of CQD/organic hybrid devices, enhancing charge extraction properties at electron transport layer (ETL)/CQD interfaces is crucial. Hence, we carefully adjust the interface properties between the ETL and CQD layer by incorporating an interfacial layer for the ETL (EIL) using several types of cinnamic acid ligands. The EIL having a cascading band offset (ΔEC) between the ETL and CQD layer suppresses the potential barrier and the local charge accumulation at ETL/CQD interfaces, thereby reducing the bimolecular recombination. An optimal EIL effectively expands the depletion region that facilitates charge extraction between the ETL and CQD layer while preventing the formation of shallow traps. Representative devices with an EIL exhibit a maximum power conversion efficiency of 14.01% and retain over 80% of initial performances after 300 h under continuous maximum power point operation.
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Affiliation(s)
- Jihyung Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Changjo Kim
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Min-Ho Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Irem Kozakci
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sungjun Cho
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Beomil Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Sang Yeon Lee
- Information and Electronics Research Institute, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jihun Oh
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
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3
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Fang S, Huang J, Tao R, Wei Q, Ding X, Yajima S, Chen Z, Zhu W, Liu C, Li Y, Yin N, Song L, Liu Y, Shi G, Wu H, Gao Y, Wen X, Chen Q, Shen Q, Li Y, Liu Z, Li Y, Ma W. Open-Shell Diradical-Sensitized Electron Transport Layer for High-Performance Colloidal Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2212184. [PMID: 36870078 DOI: 10.1002/adma.202212184] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2022] [Revised: 02/17/2023] [Indexed: 05/26/2023]
Abstract
The zinc oxide (ZnO) nanoparticles (NPs) are well-documented as an excellent electron transport layer (ETL) in optoelectronic devices. However, the intrinsic surface flaw of the ZnO NPs can easily result in serious surface recombination of carriers. Exploring effective passivation methods of ZnO NPs is essential to maximize the device's performance. Herein, a hybrid strategy is explored for the first time to improve the quality of ZnO ETL by incorporating stable organic open-shell donor-acceptor type diradicaloids. The high electron-donating feature of the diradical molecules can efficiently passivate the deep-level trap states and improve the conductivity of ZnO NP film. The unique advantage of the radical strategy is that its passivation effectiveness is highly correlated with the electron-donating ability of radical molecules, which can be precisely controlled by the rational design of molecular chemical structures. The well-passivated ZnO ETL is applied in lead sulfide (PbS) colloidal quantum dot solar cells, delivering a power conversion efficiency of 13.54%. More importantly, as a proof-of-concept study, this work will inspire the exploration of general strategies using radical molecules to construct high-efficiency solution-processed optoelectronic devices.
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Affiliation(s)
- Shiwen Fang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Jiaxing Huang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Ran Tao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Wei
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Xiaobo Ding
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Shota Yajima
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Zhongxin Chen
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Weiya Zhu
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Cheng Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yusheng Li
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Ni Yin
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Leliang Song
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Guozheng Shi
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Hao Wu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Yiyuan Gao
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Xin Wen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Qi Chen
- i-Lab, CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, 215123, China
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro-Communications, 1-5-1 Chofugaoka, Chofu, Tokyo, 182-8585, Japan
| | - Youyong Li
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
| | - Zeke Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
| | - Yuan Li
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Wanli Ma
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, 199 Ren'ai Road, Suzhou, Jiangsu, 215123, China
- Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, Jiangsu, 215123, P. R. China
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4
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Zhao Q, Han R, Marshall AR, Wang S, Wieliczka BM, Ni J, Zhang J, Yuan J, Luther JM, Hazarika A, Li GR. Colloidal Quantum Dot Solar Cells: Progressive Deposition Techniques and Future Prospects on Large-Area Fabrication. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107888. [PMID: 35023606 DOI: 10.1002/adma.202107888] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/02/2021] [Revised: 12/18/2021] [Indexed: 06/14/2023]
Abstract
Colloidally grown nanosized semiconductors yield extremely high-quality optoelectronic materials. Many examples have pointed to near perfect photoluminescence quantum yields, allowing for technology-leading materials such as high purity color centers in display technology. Furthermore, because of high chemical yield, and improved understanding of the surfaces, these materials, particularly colloidal quantum dots (QDs) can also be ideal candidates for other optoelectronic applications. Given the urgent necessity toward carbon neutrality, electricity from solar photovoltaics will play a large role in the power generation sector. QDs are developed and shown dramatic improvements over the past 15 years as photoactive materials in photovoltaics with various innovative deposition properties which can lead to exceptionally low-cost and high-performance devices. Once the key issues related to charge transport in optically thick arrays are addressed, QD-based photovoltaic technology can become a better candidate for practical application. In this article, the authors show how the possibilities of different deposition techniques can bring QD-based solar cells to the industrial level and discuss the challenges for perovskite QD solar cells in particular, to achieve large-area fabrication for further advancing technology to solve pivotal energy and environmental issues.
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Affiliation(s)
- Qian Zhao
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | - Rui Han
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Ashley R Marshall
- Condensed Matter Physics Department of Physics, University of Oxford, Parks Road, Oxford, OX13PU, UK
| | - Shuo Wang
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
| | | | - Jian Ni
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Jianjun Zhang
- College of Electronic Information and Optical Engineering, Nankai University, Tianjin, 300350, China
| | - Jianyu Yuan
- Institute of Functional Nano and Soft Materials Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Joseph M Luther
- National Renewable Energy Laboratory, Golden, CO, 80401, USA
| | - Abhijit Hazarika
- Polymers and Functional Materials Division, CSIR-Indian Institute of Chemical Technology, Uppal Road, Tarnaka, Hyderabad, 500007, India
| | - Guo-Ran Li
- School of Materials Science and Engineering, Nankai University, Tianjin, 300350, China
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5
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Li M, Chen S, Zhao X, Xiong K, Wang B, Shah UA, Gao L, Lan X, Zhang J, Hsu HY, Tang J, Song H. Matching Charge Extraction Contact for Infrared PbS Colloidal Quantum Dot Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105495. [PMID: 34859592 DOI: 10.1002/smll.202105495] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2021] [Revised: 10/21/2021] [Indexed: 05/17/2023]
Abstract
Infrared solar cells (IRSCs) can supplement silicon or perovskite SCs to broaden the utilization of the solar spectrum. As an ideal infrared photovoltaic material, PbS colloidal quantum dots (CQDs) with tunable bandgaps can make good use of solar energy, especially the infrared region. However, as the QD size increases, the energy level shrinking and surface facet evolution makes us reconsider the matching charge extraction contacts and the QD passivation strategy. Herein, different to the traditional sol-gel ZnO layer, energy-level aligned ZnO thin film from a magnetron sputtering method is adopted for electron extraction. In addition, a modified hybrid ligand recipe is developed for the facet passivation of large size QDs. As a result, the champion IRSC delivers an open circuit voltage of 0.49 V and a power conversion efficiency (PCE) of 10.47% under AM1.5 full-spectrum illumination, and the certified PCE is over 10%. Especially the 1100 nm filtered efficiency achieves 1.23%. The obtained devices also show high storage stability. The present matched electron extraction and QD passivation strategies are expected to highly booster the IR conversion yield and promote the fast development of new conception QD optoelectronics.
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Affiliation(s)
- Mingyu Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, P. R. China
| | - Shiwu Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzhao Zhao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Kao Xiong
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Bo Wang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Usman Ali Shah
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jianbing Zhang
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Hsien-Yi Hsu
- School of Energy and Environment & Department of Materials Science and Engineering, City University of Hong Kong, Kowloon Tong, Hong Kong, 999077, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
- Wenzhou Advanced Manufacturing Technology Research Institute of Huazhong University of Science and Technology, Wenzhou, Zhejiang, P. R. China
- School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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6
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Yuan M, Wang X, Chen X, He J, Li K, Song B, Hu H, Gao L, Lan X, Chen C, Tang J. Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2102340. [PMID: 34561947 DOI: 10.1002/smll.202102340] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.
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Affiliation(s)
- Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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7
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Clark PCJ, Lewis NK, Ke JCR, Ahumada-Lazo R, Chen Q, Neo DCJ, Gaulding EA, Pach GF, Pis I, Silly MG, Flavell WR. Surface band bending and carrier dynamics in colloidal quantum dot solids. NANOSCALE 2021; 13:17793-17806. [PMID: 34668501 DOI: 10.1039/d1nr05436h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device. Whether band bending is intrinsic to CQD solids, i.e. is band bending present at the surface-vacuum interface, has previously been unanswered. Here we use photoemission surface photovoltage measurements to show that depletion regions are present at the surface of n and p-type CQD solids with various ligand treatments (EDT, MPA, PbI2, MAI/PbI2). Using laser-pump photoemission-probe time-resolved measurements, we show that the timescale of carrier dynamics in the surface of CQD solids can vary over at least 6 orders of magnitude, with the fastest dynamics on the order of microseconds in PbS-MAI/PbI2 solids and on the order of seconds for PbS-MPA and PbS-PbI2. By investigating the surface chemistry of the solids, we find a correlation between the carrier dynamics timescales and the presence of oxygen contaminants, which we suggest are responsible for the slower dynamics due to deep trap formation.
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Affiliation(s)
- Pip C J Clark
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Nathan K Lewis
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Jack Chun-Ren Ke
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Ruben Ahumada-Lazo
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
| | - Qian Chen
- Department of Materials, The University of Manchester, Manchester M13 9PL, UK
| | - Darren C J Neo
- Department of Chemistry, University of California, Irvine, Irvine, California 92697, USA
| | | | - Gregory F Pach
- National Renewable Energy Laboratory, Golden, CO 80401, USA
| | - Igor Pis
- Laboratorio TASC, IOM CNR, S.S. 14 km 163.5, 34149 Basovizza, Trieste, Italy
- Elettra-Sincrotrone Trieste S.C.p.A., S. S. 14 Km 163.5, 34149 Basovizza, Trieste, Italy
| | - Mathieu G Silly
- Synchrotron SOLEIL, BP 48, Saint-Aubin, F91192 Gif sur Yvette CEDEX, France
| | - Wendy R Flavell
- Department of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
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8
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Bashir R, Bilal MK, Bashir A, Zhao J, Asif SU, Ahmad W, Xie J, Hu W. A low-temperature solution-processed indium incorporated zinc oxide electron transport layer for high-efficiency lead sulfide colloidal quantum dot solar cells. NANOSCALE 2021; 13:12991-12999. [PMID: 34477782 DOI: 10.1039/d1nr03572j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Colloidal quantum dot solar cells (CQDSCs) have achieved remarkable progress recently in terms of mainly surface passivation and composition-matching matrices on CQDs, while improving the overall photoelectric conversion efficiency (PCE) through electron transport layer (ETL) modifications is less explored. We report a low-temperature solution route to synthesize donor (Al3+/Ga3+/In3+) incorporated zinc oxide (AZO/GZO/IZO) ETL films for PbS CQDSCs. Spectroscopic characterization studies indicate that the IZO ETL fabricated with 150 °C annealing can increase the bandgap the most from 3.56 eV to 3.74 eV, possesses enhanced light transmission (∼94%) and finer particle sizes, and importantly shows the most suitable band alignment and charge transfer ability. Well-dispersed PbS CQDs of around 3 nm are synthesized by a N2-protected reflux method and are surface exchanged with 1-ethyl-3-methylimidazolium iodide (EMII) to allow I- grafting and ethanedithiol (EDT) for the active layer and hole transport layer, respectively. The IZO based PbS CQDSC, with a device architecture of ITO/IZO/PbS-EMII/PbS-EDT/Au, shows an enhanced PCE of 11.1% (comparatively 18% higher than that of the ZnO ETL), a VOC value of 0.64 V, and a JSC of 25.8 mA cm-2. The improved performances benefit from the higher recombination resistance and constrained photoluminescence emission with the utilization of the IZO ETL that provides a superior charge transfer property.
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Affiliation(s)
- Rabia Bashir
- Key Laboratory of LCR Materials and Devices of Yunnan Province, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming 650091, P. R. China.
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9
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Liu J, Xian K, Ye L, Zhou Z. Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008115. [PMID: 34085736 DOI: 10.1002/adma.202008115] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Revised: 01/09/2021] [Indexed: 06/12/2023]
Abstract
Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (Voc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high Voc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the Voc loss is first analyzed via detailed balance theory and the origin of Voc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the Voc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the Voc loss are summarized. Finally, various strategies are discussed to reduce interface Voc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Kaihu Xian
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Zhihua Zhou
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
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10
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Lee S, Choi MJ, Sharma G, Biondi M, Chen B, Baek SW, Najarian AM, Vafaie M, Wicks J, Sagar LK, Hoogland S, de Arquer FPG, Voznyy O, Sargent EH. Orthogonal colloidal quantum dot inks enable efficient multilayer optoelectronic devices. Nat Commun 2020; 11:4814. [PMID: 32968078 PMCID: PMC7511352 DOI: 10.1038/s41467-020-18655-7] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Accepted: 09/01/2020] [Indexed: 12/02/2022] Open
Abstract
Surface ligands enable control over the dispersibility of colloidal quantum dots (CQDs) via steric and electrostatic stabilization. Today’s device-grade CQD inks have consistently relied on highly polar solvents: this enables facile single-step deposition of multi-hundred-nanometer-thick CQD films; but it prevents the realization of CQD film stacks made up of CQDs having different compositions, since polar solvents redisperse underlying films. Here we introduce aromatic ligands to achieve process-orthogonal CQD inks, and enable thereby multifunctional multilayer CQD solids. We explore the effect of the anchoring group of the aromatic ligand on the solubility of CQD inks in weakly-polar solvents, and find that a judicious selection of the anchoring group induces a dipole that provides additional CQD-solvent interactions. This enables colloidal stability without relying on bulky insulating ligands. We showcase the benefit of this ink as the hole transport layer in CQD optoelectronics, achieving an external quantum efficiency of 84% at 1210 nm. The realisation of film made up of different compositions using colloidal QD inks remains a challenge because of redispersing of underlying films by polar solvents. Here, the authors introduce aromatic ligands to achieve QD inks in weakly-polar solvents that enable fabrication of multi-compositional films.
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Affiliation(s)
- Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.,Department of Chemical and Biochemical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Geetu Sharma
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, ON, M1C 1A4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Bin Chen
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.,Department of Chemical and Biological Engineering, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul, 02841, Republic of Korea
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Joshua Wicks
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, ON, M1C 1A4, Canada.
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.
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11
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Yang X, Yang J, Khan J, Deng H, Yuan S, Zhang J, Xia Y, Deng F, Zhou X, Umar F, Jin Z, Song H, Cheng C, Sabry M, Tang J. Hydroiodic Acid Additive Enhanced the Performance and Stability of PbS-QDs Solar Cells via Suppressing Hydroxyl Ligand. NANO-MICRO LETTERS 2020; 12:37. [PMID: 34138233 PMCID: PMC7770827 DOI: 10.1007/s40820-020-0372-z] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2019] [Accepted: 12/25/2019] [Indexed: 05/03/2023]
Abstract
The recent emerging progress of quantum dot ink (QD-ink) has overcome the complexity of multiple-step colloidal QD (CQD) film preparation and pronouncedly promoted the device performance. However, the detrimental hydroxyl (OH) ligands induced from synthesis procedure have not been completely removed. Here, a halide ligand additive strategy was devised to optimize QD-ink process. It simultaneously reduced sub-bandgap states and converted them into iodide-passivated surface, which increase carrier mobility of the QDs films and achieve thicker absorber with improved performances. The corresponding power conversion efficiency of this optimized device reached 10.78%. (The control device was 9.56%.) Therefore, this stratege can support as a candidate strategy to solve the QD original limitation caused by hydroxyl ligands, which is also compatible with other CQD-based optoelectronic devices.
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Affiliation(s)
- Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Ji Yang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Jahangeer Khan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Hui Deng
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Shengjie Yuan
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
| | - Jian Zhang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Yong Xia
- School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, People's Republic of China
| | - Feng Deng
- National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, 430071, People's Republic of China
| | - Xue Zhou
- National Center for Magnetic Resonance in Wuhan, State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan, 430071, People's Republic of China
| | - Farooq Umar
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
| | - Zhixin Jin
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China.
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China.
| | - Chun Cheng
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055, People's Republic of China.
| | - Mohamed Sabry
- Physics Department, College of Applied Science, Umm Al-Qura University, Mecca, Kingdom of Saudi Arabia
- Solar Physics Lab, National Research Institute of Astronomy and Geophysics, Cairo, Egypt
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Luoyu Road 1037, Wuhan, 430074, People's Republic of China
- Shenzhen R&D Center of Huazhong University of Science and Technology, Shenzhen, 518000, People's Republic of China
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12
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Zhang Y, Wu G, Liu F, Ding C, Zou Z, Shen Q. Photoexcited carrier dynamics in colloidal quantum dot solar cells: insights into individual quantum dots, quantum dot solid films and devices. Chem Soc Rev 2020; 49:49-84. [PMID: 31825404 DOI: 10.1039/c9cs00560a] [Citation(s) in RCA: 27] [Impact Index Per Article: 6.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/05/2023]
Abstract
The certified power conversion efficiency (PCE) record of colloidal quantum dot solar cells (QDSCs) has considerably improved from below 4% to 16.6% in the last few years. However, the record PCE value of QDSCs is still substantially lower than the theoretical efficiency. So far, there have been several reviews on recent and significant achievements in QDSCs, but reviews on photoexcited carrier dynamics in QDSCs are scarce. The photovoltaic performances of QDSCs are still limited by the photovoltage, photocurrent and fill factor that are mainly determined by the photoexcited carrier dynamics, including carrier (or exciton) generation, carrier extraction or transfer, and the carrier recombination process, in the devices. In this review, the photoexcited carrier dynamics in the whole QDSCs, originating from individual quantum dots (QDs) to the entire device as well as the characterization methods used for analyzing the photoexcited carrier dynamics are summarized and discussed. The recent research including photoexcited multiple exciton generation (MEG), hot electron extraction, and carrier transfer between adjacent QDs, as well as carrier injection and recombination at each interface of QDSCs are discussed in detail herein. The influence of photoexcited carrier dynamics on the physiochemical properties of QDs and photovoltaic performances of QDSC devices is also discussed.
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Affiliation(s)
- Yaohong Zhang
- Faculty of Informatics and Engineering, The University of Electro-Communications, Tokyo 182-8585, Japan.
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13
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Lin WMM, Yazdani N, Yarema O, Volk S, Yarema M, Kirchartz T, Wood V. Simulating nanocrystal-based solar cells: A lead sulfide case study. J Chem Phys 2019; 151:241104. [DOI: 10.1063/1.5129159] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/14/2022] Open
Affiliation(s)
- Weyde M. M. Lin
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Nuri Yazdani
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Olesya Yarema
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Sebastian Volk
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Maksym Yarema
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
| | - Thomas Kirchartz
- IEK-5 Photovoltaik, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany
- Faculty of Engineering and CENIDE, University of Duisburg-Essen, Carl-Benz-Str. 199, 47057 Duisburg, Germany
| | - Vanessa Wood
- Materials and Device Engineering Group, Department of Information Technology and Electrical Engineering, ETH Zurich, 8092 Zurich, Switzerland
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14
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Gao Y, Patterson R, Hu L, Yuan L, Zhang Z, Hu Y, Chen Z, Teh ZL, Conibeer G, Huang S. MgCl 2 passivated ZnO electron transporting layer to improve PbS quantum dot solar cells. NANOTECHNOLOGY 2019; 30:085403. [PMID: 30248023 DOI: 10.1088/1361-6528/aae3de] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The unique tunable bandgaps and straightforward synthesis of colloidal quantum dots make them promising low-cost materials for photovoltaics. High-performance colloidal quantum dot solar cells rely on good-quality electron transporting layers (ETLs) to make carrier selective contacts. Despite extensive use of n-type oxides as ETLs, a detailed understanding of their surface and interface states as well as mechanisms to improve their optical properties are still under development. Here, we report a simple procedure to produce MgCl2 passivated ZnO nanoparticles ETLs that show improved device performance. The MgCl2 treated ZnO electron transporting layers boost the PbS colloidal quantum dot cell efficiency from 6.3% to 8.2%. The cell exhibits reduced defects leading to significant improvements of both FF and J sc. This low-temperature MgCl2 treated ZnO electron transporting layer may be applied in solution processed tandem cells as a promising strategy to further increase cell efficiencies.
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Affiliation(s)
- Yijun Gao
- Australian Centre for Advanced Photovoltaics, School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, Sydney 2052, Australia
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15
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Photovoltaic Performances of Yb Doped CdTe QDs Sensitized TiO2 Photoanodes for Solar cell Applications. J Inorg Organomet Polym Mater 2019. [DOI: 10.1007/s10904-018-01060-5] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/27/2022]
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16
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Liu Y, Zhang H, Zhao Q, Lu Q, Zhu M, Zhang M. Room temperature ferromagnetic properties of In2S3 nanoparticles regulated by doping with Gd ions. Phys Chem Chem Phys 2019; 21:15089-15096. [DOI: 10.1039/c9cp02554e] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Gd-Doped In2S3 nanoparticles, with sizes of 3–5 nm, were synthesized, which demonstrated enhanced room-temperature ferromagnetism.
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Affiliation(s)
- Yi Liu
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Hongpeng Zhang
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Qi Zhao
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Qing Lu
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Mingming Zhu
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
| | - Mingzhe Zhang
- State Key Laboratory of Superhard Materials
- College of physics
- Jilin University
- Changchun 130012
- People's Republic of China
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17
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Kim J, Ouellette O, Voznyy O, Wei M, Choi J, Choi MJ, Jo JW, Baek SW, Fan J, Saidaminov MI, Sun B, Li P, Nam DH, Hoogland S, Lu ZH, García de Arquer FP, Sargent EH. Butylamine-Catalyzed Synthesis of Nanocrystal Inks Enables Efficient Infrared CQD Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1803830. [PMID: 30276885 DOI: 10.1002/adma.201803830] [Citation(s) in RCA: 34] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2018] [Revised: 08/21/2018] [Indexed: 05/05/2023]
Abstract
The best-performing colloidal-quantum-dot (CQD) photovoltaic devices suffer from charge recombination within the quasi-neutral region near the back hole-extracting junction. Graded architectures, which provide a widened depletion region at the back junction of device, could overcome this challenge. However, since today's best materials are processed using solvents that lack orthogonality, these architectures have not yet been implemented using the best-performing CQD solids. Here, a new CQD ink that is stable in nonpolar solvents is developed via a neutral donor ligand that functions as a phase-transfer catalyst. This enables the realization of an efficient graded architecture that, with an engineered band-alignment at the back junction, improves the built-in field and charge extraction. As a result, optimized IR CQD solar cells (Eg ≈ 1.3 eV) exhibiting a power conversion efficiency (PCE) of 12.3% are reported. The strategy is applied to small-bandgap (1 eV) IR CQDs to augment the performance of perovskite and crystalline silicon (cSi) 4-terminal tandem solar cells. The devices show the highest PCE addition achieved using a solution-processed active layer: a value of +5% when illuminated through a 1.58 eV bandgap perovskite front filter, providing a pathway to exceed PCEs of 23% in 4T tandem configurations with IR CQD PVs.
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Affiliation(s)
- Junghwan Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Olivier Ouellette
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Mingyang Wei
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jongmin Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jea Woong Jo
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - James Fan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Makhsud I Saidaminov
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Peicheng Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Dae-Hyun Nam
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Zheng-Hong Lu
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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18
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Zhou R, Yang Z, Xu J, Cao G. Synergistic combination of semiconductor quantum dots and organic-inorganic halide perovskites for hybrid solar cells. Coord Chem Rev 2018. [DOI: 10.1016/j.ccr.2018.07.009] [Citation(s) in RCA: 40] [Impact Index Per Article: 6.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/07/2023]
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19
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Azmi R, Seo G, Ahn TK, Jang SY. High-Efficiency Air-Stable Colloidal Quantum Dot Solar Cells Based on a Potassium-Doped ZnO Electron-Accepting Layer. ACS APPLIED MATERIALS & INTERFACES 2018; 10:35244-35249. [PMID: 30246532 DOI: 10.1021/acsami.8b12577] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
High-efficiency colloidal quantum dot (CQD) solar cells (CQDSCs) with improved air stability were developed by employing potassium-modified ZnO as an electron-accepting layer (EAL). The effective potassium modification was achievable by a simple treatment with a KOH solution of pristine ZnO films prepared by a low-temperature solution process. The resulting K-doped ZnO (ZnO-K) exhibited EAL properties superior to those of a pristine ZnO-EAL. The Fermi energy level of ZnO was upshifted, which increased the internal electric field and amplified the depletion region (i.e., charge drift) of the devices. The surface defects of ZnO were effectively passivated by K modification, which considerably suppressed interfacial charge recombination. The CQDSC based on ZnO-K achieved improved power conversion efficiency (PCE) of ≈10.75% ( VOC of 0.67 V, JSC of 23.89 mA cm-2, and fill factor of 0.68), whereas the CQDSC based on pristine ZnO showed PCE of 9.97%. Moreover, the suppressed surface defects of ZnO-K substantially improved long-term stability under air. The device using ZnO-K exhibited superior long-term air storage stability (96% retention after 90 days) compared to that using pristine ZnO (88% retention after 90 days). The ZnO-K-based device also exhibited improved photostability under air. Under continuous light illumination for 600 min, the ZnO-K-based device retained 96% of its initial PCE, whereas the pristine ZnO-based device retained only 67%.
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Affiliation(s)
- Randi Azmi
- Department of Chemistry , Kookmin University , 77 Jeongneung-ro , Seongbuk-gu, Seoul 136-702 , Republic of Korea
| | - Gabseok Seo
- Department of Energy Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Tae Kyu Ahn
- Department of Energy Science , Sungkyunkwan University , 2066 Seobu-ro , Jangan-gu, Suwon , Gyeonggi-do 16419 , Republic of Korea
| | - Sung-Yeon Jang
- Department of Chemistry , Kookmin University , 77 Jeongneung-ro , Seongbuk-gu, Seoul 136-702 , Republic of Korea
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Abstract
From a niche field over 30 years ago, quantum dots (QDs) have developed into viable materials for many commercial optoelectronic devices. We discuss the advancements in Pb-based QD solar cells (QDSCs) from a viewpoint of the pathways an excited state can take when relaxing back to the ground state. Systematically understanding the fundamental processes occurring in QDs has led to improvements in solar cell efficiency from ~3% to over 13% in 8 years. We compile data from ~200 articles reporting functioning QDSCs to give an overview of the current limitations in the technology. We find that the open circuit voltage limits the device efficiency and propose some strategies for overcoming this limitation.
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21
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Kirmani AR, Sheikh AD, Niazi MR, Haque MA, Liu M, de Arquer FPG, Xu J, Sun B, Voznyy O, Gasparini N, Baran D, Wu T, Sargent EH, Amassian A. Overcoming the Ambient Manufacturability-Scalability-Performance Bottleneck in Colloidal Quantum Dot Photovoltaics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1801661. [PMID: 29978514 DOI: 10.1002/adma.201801661] [Citation(s) in RCA: 35] [Impact Index Per Article: 5.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/14/2018] [Revised: 04/21/2018] [Indexed: 05/22/2023]
Abstract
Colloidal quantum dot (CQD) solar cells have risen rapidly in performance; however, their low-cost fabrication under realistic ambient conditions remains elusive. This study uncovers that humid environments curtail the power conversion efficiency (PCE) of solar cells by preventing the needed oxygen doping of the hole transporter during ambient fabrication. A simple oxygen-doping step enabling ambient manufacturing irrespective of seasonal humidity variations is devised. Solar cells with PCE > 10% are printed under high humidity at industrially viable speeds. The devices use a tiny fraction of the ink typically needed and are air stable over a year. The humidity-resilient fabrication of efficient CQD solar cells breaks a long-standing compromise, which should accelerate commercialization.
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Affiliation(s)
- Ahmad R Kirmani
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Arif D Sheikh
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Muhammad R Niazi
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Md Azimul Haque
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Mengxia Liu
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Jixian Xu
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Nicola Gasparini
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Derya Baran
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Tom Wu
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario, M5S 3G4, Canada
| | - Aram Amassian
- Physical Sciences and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
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22
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Yang J, Lee J, Lee J, Yi W. Suppressed Interfacial Charge Recombination of PbS Quantum Dot Photovoltaics by Graphene Incorporated into ZnO Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2018; 10:25311-25320. [PMID: 29863331 DOI: 10.1021/acsami.8b05556] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Single-layer graphene (SLG) was incorporated into ZnO nanoparticles (NPs), and use of this material in photovoltaic devices generated significant changes. The Fermi level of ZnO NPs underwent a downshift, whereas the conduction and valence bands were maintained with increasing SLG concentrations. Furthermore, the effective defect densities were reduced and carrier mobility was enhanced. Colloidal quantum dot photovoltaics (CQDPVs) with the SLG-incorporated ZnO NP layer as an electron transporting layer achieved significant performance enhancement. Poor performing CQDPVs were also observed with incorporation of an excess amount of SLG. This trend paralleled the interfacial charge recombination trends of CQDPVs. Effective suppression of interfacial recombination was achieved for CQDPVs with an appropriate SLG concentration, whereas dramatically increased interfacial recombination was observed for CQDPVs with an excess of SLG. For CQDPVs with appropriate SLG incorporation, efficient defect passivation and enhanced electron mobility of ZnO NPs facilitated loss-less electron transfer and efficient electron extraction without compromising the favorable energy level alignment. Excess SLG incorporation led to an increase in recombination within the PbS QD layer due to the presence of an energy barrier. This simple and powerful strategy provides an effective method for modulating the interfacial properties of CQDPVs.
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Affiliation(s)
- Jonghee Yang
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 133-791 , Republic of Korea
| | - Jongtaek Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 133-791 , Republic of Korea
| | - Junyoung Lee
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 133-791 , Republic of Korea
| | - Whikun Yi
- Research Institute for Natural Sciences and Department of Chemistry , Hanyang University , Seoul 133-791 , Republic of Korea
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23
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Tulsani SR, Rath AK. Photo-induced surface modification to improve the performance of lead sulfide quantum dot solar cell. J Colloid Interface Sci 2018; 522:120-125. [PMID: 29579563 DOI: 10.1016/j.jcis.2018.03.047] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/27/2017] [Revised: 03/09/2018] [Accepted: 03/14/2018] [Indexed: 10/17/2022]
Abstract
The solution-processed quantum dot (QD) solar cell technology has seen significant advancements in recent past to emerge as a potential contender for the next generation photovoltaic technology. In the development of high performance QD solar cell, the surface ligand chemistry has played the important role in controlling the doping type and doping density of QD solids. For instance, lead sulfide (PbS) QDs which is at the forefront of QD solar cell technology, can be made n-type or p-type respectively by using iodine or thiol as the surfactant. The advancements in surface ligand chemistry enable the formation of p-n homojunction of PbS QDs layers to attain high solar cell performances. It is shown here, however, that poor Fermi level alignment of thiol passivated p-type PbS QD hole transport layer with the n-type PbS QD light absorbing layer has rendered the photovoltaic devices from realizing their full potential. Here we develop a control surface oxidation technique using facile ultraviolet ozone treatment to increase the p-doping density in a controlled fashion for the thiol passivated PbS QD layer. This subtle surface modification tunes the Fermi energy level of the hole transport layer to deeper values to facilitate the carrier extraction and voltage generation in photovoltaic devices. In photovoltaic devices, the ultraviolet ozone treatment resulted in the average gain of 18% in the power conversion efficiency with the highest recorded efficiency of 8.98%.
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Affiliation(s)
| | - Arup Kumar Rath
- CSIR-National Chemical Laboratory, Dr. Homi Bhabha Road, Pune 411008, India.
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24
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Baek SW, Cho J, Kim JS, Kim C, Na K, Lee SH, Jun S, Song JH, Jeong S, Choi JW, Lee JY. A Colloidal-Quantum-Dot-Based Self-Charging System via the Near-Infrared Band. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707224. [PMID: 29748976 DOI: 10.1002/adma.201707224] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/11/2017] [Revised: 02/26/2018] [Indexed: 06/08/2023]
Abstract
A novel self-charging platform is proposed using colloidal-quantum-dot (CQD) photovoltaics (PVs) via the near-infrared (NIR) band for low-power electronics. Low-bandgap CQDs can convert invisible NIR light sources to electrical energy more efficiently than wider spectra because of reduced thermalization loss. This energy-conversion strategy via NIR photons ensures an enhanced photostability of the CQD devices. Furthermore, the NIR wireless charging system can be concealed using various colored and NIR-transparent fabric or films, providing aesthetic freedom. Finally, an NIR-driven wireless charging system is demonstrated for a wearable healthcare bracelet by integrating a CQD PVs receiver with a flexible lithium-ion battery and entirely embedding them into a flexible strap, enabling permanent self-charging without detachment.
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Affiliation(s)
- Se-Woong Baek
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Jungmin Cho
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Joo-Seong Kim
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Changjo Kim
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Kwangmin Na
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Sang-Hoon Lee
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Sunhong Jun
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
| | - Jung Hoon Song
- Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, Republic of Korea
| | - Sohee Jeong
- Nanomechanical Systems Research Division, Korea Institute of Machinery and Materials (KIMM), Daejeon, 34103, Republic of Korea
- Department of Nanomechatronics, Korea University of Science and Technology (UST), Daejeon, 34113, Republic of Korea
| | - Jang Wook Choi
- School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jung-Yong Lee
- Graduate School of Energy, Environment, Water, and Sustainability (EEWS), Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
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25
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Lu K, Wang Y, Liu Z, Han L, Shi G, Fang H, Chen J, Ye X, Chen S, Yang F, Shulga AG, Wu T, Gu M, Zhou S, Fan J, Loi MA, Ma W. High-Efficiency PbS Quantum-Dot Solar Cells with Greatly Simplified Fabrication Processing via "Solvent-Curing". ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:e1707572. [PMID: 29718542 DOI: 10.1002/adma.201707572] [Citation(s) in RCA: 49] [Impact Index Per Article: 8.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/27/2017] [Revised: 03/02/2018] [Indexed: 05/09/2023]
Abstract
PbS quantum-dot (QD) solar cells are promising candidates for low-cost solution-processed photovoltaics. However, the device fabrication usually requires ten more times film deposition and rinsing steps, which is not ideal for scalable manufacturing. Here, a greatly simplified deposition processing is demonstrated by replacing methanol with acetonitrile (ACN) as the rinsing solvent. It is discovered that ACN can effectively "cure" the film cracks generated from the volume loss during the solid-state ligand-exchange process, which enables the deposition of thick and dense films with much fewer deposition steps. Meanwhile, due to the aprotic nature of ACN, fewer trap states can be introduced during the rinsing process. As a result, with only three deposition steps for the active layer, a CPVT-certified 11.21% power conversion efficiency is obtained, which is the highest efficiency ever reported for PbS QD solar cells employing a solid-state ligand-exchange process. More importantly, the simple film-deposition processing provides an opportunity for the future application of QDs in low-cost printing of optoelectronic devices.
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Affiliation(s)
- Kunyuan Lu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Yongjie Wang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Zeke Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Lu Han
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Guozheng Shi
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Honghua Fang
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, The Netherlands
| | - Jun Chen
- Department of Chemistry, Indiana University, Bloomington, 800 E. Kirkwood Ave., Bloomington, IN, 47405, USA
| | - Xingchen Ye
- Department of Chemistry, Indiana University, Bloomington, 800 E. Kirkwood Ave., Bloomington, IN, 47405, USA
| | - Si Chen
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Fan Yang
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Artem G Shulga
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, The Netherlands
| | - Tian Wu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Mengfan Gu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Sijie Zhou
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Jian Fan
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
| | - Maria Antonietta Loi
- Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG, The Netherlands
| | - Wanli Ma
- Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123, Jiangsu, P. R. China
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26
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Cho Y, Hou B, Lim J, Lee S, Pak S, Hong J, Giraud P, Jang AR, Lee YW, Lee J, Jang JE, Snaith HJ, Morris SM, Sohn JI, Cha S, Kim JM. Balancing Charge Carrier Transport in a Quantum Dot P-N Junction toward Hysteresis-Free High-Performance Solar Cells. ACS ENERGY LETTERS 2018; 3:1036-1043. [PMID: 29774242 PMCID: PMC5951602 DOI: 10.1021/acsenergylett.8b00130] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2018] [Accepted: 03/28/2018] [Indexed: 05/05/2023]
Abstract
In a quantum dot solar cell (QDSC) that has an inverted structure, the QD layers form two different junctions between the electron transport layer (ETL) and the other semiconducting QD layer. Recent work on an inverted-structure QDSC has revealed that the junction between the QD layers is the dominant junction, rather than the junction between the ETL and the QD layers, which is in contrast to the conventional wisdom. However, to date, there have been a lack of systematic studies on the role and importance of the QD heterojunction structure on the behavior of the solar cell and the resulting device performance. In this study, we have systematically controlled the structure of the QD junction to balance charge transport, which demonstrates that the position of the junction has a significant effect on the hysteresis effect, fill factor, and solar cell performance and is attributed to balanced charge transport.
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Affiliation(s)
- Yuljae Cho
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Bo Hou
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Jongchul Lim
- Department
of Physics, Clarendon Laboratory, University
of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Sanghyo Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Sangyeon Pak
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - John Hong
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Paul Giraud
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - A-Rang Jang
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Young-Woo Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- Department
of Energy Systems, Soonchunhyang University, Asan, Chungcheongnamdo 31538, Republic of Korea
| | - Juwon Lee
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Jae Eun Jang
- Department
of Information and Communication Engineering, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873, Republic of Korea
| | - Henry J. Snaith
- Department
of Physics, Clarendon Laboratory, University
of Oxford, Parks Road, Oxford OX1 3PU, United Kingdom
| | - Stephen M. Morris
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
| | - Jung Inn Sohn
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- Division
of Physics and Semiconductor Science, Dongguk
University, Seoul 100-715, Republic of Korea
- E-mail: (J.I.S.)
| | - SeungNam Cha
- Department
of Engineering Science, University of Oxford, Parks Road, Oxford OX1 3PJ, United
Kingdom
- E-mail: (S.C.)
| | - Jong Min Kim
- Department
of Engineering, University of Cambridge, 9 JJ Thomson Avenue, Cambridge CB3 0FA, United Kingdom
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27
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Wang R, Wu X, Xu K, Zhou W, Shang Y, Tang H, Chen H, Ning Z. Highly Efficient Inverted Structural Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30. [PMID: 29315851 DOI: 10.1002/adma.201704882] [Citation(s) in RCA: 39] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/25/2017] [Revised: 10/08/2017] [Indexed: 05/04/2023]
Abstract
Highly efficient PbS colloidal quantum dot (QD) solar cells based on an inverted structure have been missing for a long time. The bottlenecks are the construction of an effective p-n heterojunction at the illumination side with smooth band alignment and the absence of serious interface carrier recombination. Here, solution-processed nickel oxide (NiO) as the p-type layer and lead sulfide (PbS) QDs with iodide ligand as the n-type layer are explored to build a p-n heterojunction at the illumination side. The large depletion region in the QD layer at the illumination side leads to high photocurrent. Interface carrier recombination at the interface is effectively prohibited by inserting a layer of slightly doped p-type QDs with 1,2-ethanedithiol as ligands, leading to improved voltage of the device. Based on this graded device structure design, the efficiency of inverted structural heterojunction PbS QD solar cells is improved to 9.7%, one time higher than the highest efficiency achieved before.
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Affiliation(s)
- Ruili Wang
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
- Shanghai Institute of Ceramic, Chinese Academy of Sciences, Shanghai, 200050, P. R. China
- School of Chemistry and Chemical Engineering, University of Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xun Wu
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Kaimin Xu
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Wenjia Zhou
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Yuequn Shang
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Haoying Tang
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Hao Chen
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
| | - Zhijun Ning
- School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, P.R. China
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28
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Bi Y, Pradhan S, Gupta S, Akgul MZ, Stavrinadis A, Konstantatos G. Infrared Solution-Processed Quantum Dot Solar Cells Reaching External Quantum Efficiency of 80% at 1.35 µm and J sc in Excess of 34 mA cm -2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2018; 30:1704928. [PMID: 29315877 DOI: 10.1002/adma.201704928] [Citation(s) in RCA: 17] [Impact Index Per Article: 2.8] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/28/2017] [Revised: 10/30/2017] [Indexed: 06/07/2023]
Abstract
Developing low-cost photovoltaic absorbers that can harvest the short-wave infrared (SWIR) part of the solar spectrum, which remains unharnessed by current Si-based and perovskite photovoltaic technologies, is a prerequisite for making high-efficiency, low-cost tandem solar cells. Here, infrared PbS colloidal quantum dot (CQD) solar cells employing a hybrid inorganic-organic ligand exchange process that results in an external quantum efficiency of 80% at 1.35 µm are reported, leading to a short-circuit current density of 34 mA cm-2 and a power conversion efficiency (PCE) up to 7.9%, which is a current record for SWIR CQD solar cells. When this cell is placed at the back of an MAPbI3 perovskite film, it delivers an extra 3.3% PCE by harnessing light beyond 750 nm.
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Affiliation(s)
- Yu Bi
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
| | - Santanu Pradhan
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
| | - Shuchi Gupta
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
| | - Mehmet Zafer Akgul
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
| | - Alexandros Stavrinadis
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
| | - Gerasimos Konstantatos
- ICFO (Institut de Ciencies Fotoniques), The Barcelona Institute of Science and Technology, Av. Carl Friedrich Gauss, 3, 08860, Castelldefels (Barcelona), Spain
- ICREA (Institució Catalana de Recerca i Estudis Avançats), Passeig Lluís Companys 23, 08010, Barcelona, Spain
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29
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Xu F, Ho HP. Light-Activated Metal Oxide Gas Sensors: A Review. MICROMACHINES 2017; 8:mi8110333. [PMID: 30400523 PMCID: PMC6190203 DOI: 10.3390/mi8110333] [Citation(s) in RCA: 59] [Impact Index Per Article: 8.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/11/2017] [Revised: 11/08/2017] [Accepted: 11/13/2017] [Indexed: 11/16/2022]
Abstract
Conductometric gas sensors facilitated by photons have been investigated for decades. Light illumination may enhance device attributes including operational temperature, sensing sensitivity and selectivity. This paper aims to provide an overview on the progress of light-activated gas sensors, with a specific focus on sensors based on metal oxides. The material systems that have been studied include pure metal oxides, heterostructures of semiconductor-metal oxides and metal-metal oxides, and metal oxides with dopant. Other reported works on the use of different nanostructures such as one-dimensional and porous nanostructures, study of sensing mechanisms and the interplay between various factors are also summarized. Possible directions for further improvement of sensing properties, through optimizing the size of nanomaterials, film thickness, light intensity and wavelength are discussed. Finally, we point out that the main challenge faced by light-activated gas sensors is their low optical response, and we have analyzed the feasibility of using localized surface plasmon resonance to solve this drawback. This article should offer readers some key and instructive insights into the current and future development of light-activated gas sensors.
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Affiliation(s)
- Fang Xu
- Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
| | - Ho-Pui Ho
- Department of Biomedical Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
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30
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Zhang H, Selopal GS, Zhou Y, Tong X, Benetti D, Jin L, Navarro-Pardo F, Wang Z, Sun S, Zhao H, Rosei F. Controlled synthesis of near-infrared quantum dots for optoelectronic devices. NANOSCALE 2017; 9:16843-16851. [PMID: 29072746 DOI: 10.1039/c7nr04950a] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
We designed a facile approach for the synthesis of PbS quantum dots (QDs) using thiourea and lead acetate as sources of sulfur and lead, respectively. The sizes of the PbS QDs could be systematically controlled by simply adjusting the reaction parameters. Cd post-treatment via a cation exchange method was performed to increase the stability of QDs. As a proof of concept, colloidal PbS QDs synthesized by using air-stable thiourea were employed as light harvesters for both (i) solar driven photoelectrochemical (PEC) hydrogen generation and (ii) QDs sensitized solar cells (QDSSCs). For PEC hydrogen generation, similar saturated photocurrent densities are observed by using thiourea compared to bis(trimethylsilyl) sulfide, which is air-sensitive and unstable. For QDSSCs, the devices fabricated with QDs synthesized from thiourea reveal a better performance compared to devices fabricated with QDs synthesized from traditional bis(trimethylsilyl) sulfide. Our work demonstrates that this synthetic method is a promising alternative to the existing methodologies of PbS QDs and holds great potential for future solar technologies.
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Affiliation(s)
- Hui Zhang
- Institut National de la Recherche Scientifique, 1650 Boulevard Lionel-Boulet Varennes, Quebec J3X 1S2, Canada.
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31
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Rekemeyer PH, Chuang CHM, Bawendi MG, Gradečak S. Minority Carrier Transport in Lead Sulfide Quantum Dot Photovoltaics. NANO LETTERS 2017; 17:6221-6227. [PMID: 28895741 DOI: 10.1021/acs.nanolett.7b02916] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/22/2023]
Abstract
Lead sulfide quantum dots (PbS QDs) are an attractive material system for the development of low-cost photovoltaics (PV) due to their ease of processing and stability in air, with certified power conversion efficiencies exceeding 11%. However, even the best PbS QD PV devices are limited by diffusive transport, as the optical absorption length exceeds the minority carrier diffusion length. Understanding minority carrier transport in these devices will therefore be critical for future efficiency improvement. We utilize cross-sectional electron beam-induced current (EBIC) microscopy and develop methodology to quantify minority carrier diffusion length in PbS QD PV devices. We show that holes are the minority carriers in tetrabutylammonium iodide (TBAI)-treated PbS QD films due to the formation of a p-n junction with an ethanedithiol (EDT)-treated QD layer, whereas a heterojunction with n-type ZnO forms a weaker n+-n junction. This indicates that modifying the standard device architecture to include a p-type window layer would further boost the performance of PbS QD PV devices. Furthermore, quantitative EBIC measurements yield a lower bound of 110 nm for the hole diffusion length in TBAI-treated PbS QD films, which informs design rules for planar and ordered bulk heterojunction PV devices. Finally, the low-energy EBIC approach developed in our work is generally applicable to other emerging thin-film PV absorber materials with nanoscale diffusion lengths.
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Affiliation(s)
- Paul H Rekemeyer
- Department of Materials Science and Engineering and ‡Department of Chemistry, Massachusetts Institute of Technology , 77 Massachusetts Ave, Cambridge, Massachusetts 02141, United States
| | - Chia-Hao M Chuang
- Department of Materials Science and Engineering and ‡Department of Chemistry, Massachusetts Institute of Technology , 77 Massachusetts Ave, Cambridge, Massachusetts 02141, United States
| | - Moungi G Bawendi
- Department of Materials Science and Engineering and ‡Department of Chemistry, Massachusetts Institute of Technology , 77 Massachusetts Ave, Cambridge, Massachusetts 02141, United States
| | - Silvija Gradečak
- Department of Materials Science and Engineering and ‡Department of Chemistry, Massachusetts Institute of Technology , 77 Massachusetts Ave, Cambridge, Massachusetts 02141, United States
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32
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Choi J, Kim Y, Jo JW, Kim J, Sun B, Walters G, García de Arquer FP, Quintero-Bermudez R, Li Y, Tan CS, Quan LN, Kam APT, Hoogland S, Lu Z, Voznyy O, Sargent EH. Chloride Passivation of ZnO Electrodes Improves Charge Extraction in Colloidal Quantum Dot Photovoltaics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29. [PMID: 28671721 DOI: 10.1002/adma.201702350] [Citation(s) in RCA: 19] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2017] [Revised: 05/28/2017] [Indexed: 05/04/2023]
Abstract
The tunable bandgap of colloidal quantum dots (CQDs) makes them an attractive material for photovoltaics (PV). The best present-day CQD PV devices employ zinc oxide (ZnO) as an electron transport layer; however, it is found herein that ZnO's surface defect sites and unfavorable electrical band alignment prevent devices from realizing their full potential. Here, chloride (Cl)-passivated ZnO generated from a solution of presynthesized ZnO nanoparticles treated using an organic-solvent-soluble Cl salt is reported. These new ZnO electrodes exhibit decreased surface trap densities and a favorable electronic band alignment, improving charge extraction from the CQD layer and achieving the best-cell power conversion efficiency (PCE) of 11.6% and an average PCE of 11.4 ± 0.2%.
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Affiliation(s)
- Jongmin Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Younghoon Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jea Woong Jo
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Junghwan Kim
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Bin Sun
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Grant Walters
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Rafael Quintero-Bermudez
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Yiying Li
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Chih Shan Tan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Li Na Quan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Andrew Pak Tao Kam
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Zhenghong Lu
- Department of Materials Science and Engineering, University of Toronto, 184 College Street, Toronto, Ontario, M5S 3E4, Canada
| | - Oleksandr Voznyy
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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33
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Pradhan S, Stavrinadis A, Gupta S, Konstantatos G. Reducing Interface Recombination through Mixed Nanocrystal Interlayers in PbS Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2017; 9:27390-27395. [PMID: 28787128 DOI: 10.1021/acsami.7b08568] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
The performance of ZnO/PbS colloidal quantum dot (CQD)-based heterojunction solar cells is hindered by charge carrier recombination at the heterojunction interface. Reducing interfacial recombination can improve charge collection and the photocurrent of the device. Here we report the use of a mixed nanocrystal (MNC) buffer layer comprising zinc oxide nanocrystals and lead sulfide quantum dots at the respective heterojunction interface. Remote trap passivation of the PbS CQDs taking place within this MNC layer reduces interfacial recombination and electron back transfer which in turn improves charge collection efficiency. Upon the addition of the MNC layer, the overall power conversion efficiency increases from 9.11 to 10.16% and Short-circuit current density (JSC) increases from 23.54 to 25.23 mA/cm2. Optoelectronic characterization of the solar cells confirms that the effects underlying device improvement are reduced trap density and improved charge collection efficiency due to the presence of the MNC buffer layer.
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Affiliation(s)
- Santanu Pradhan
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels (Barcelona), Spain
| | - Alexandros Stavrinadis
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels (Barcelona), Spain
| | - Shuchi Gupta
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels (Barcelona), Spain
| | - Gerasimos Konstantatos
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology , 08860 Castelldefels (Barcelona), Spain
- ICREA-Institució Catalana de Recerca i Estudis Avançats , Passeig Lluís Companys 23, 08010 Barcelona, Spain
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34
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Zhang X, Santra PK, Tian L, Johansson MB, Rensmo H, Johansson EMJ. Highly Efficient Flexible Quantum Dot Solar Cells with Improved Electron Extraction Using MgZnO Nanocrystals. ACS NANO 2017; 11:8478-8487. [PMID: 28763616 DOI: 10.1021/acsnano.7b04332] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Colloidal quantum dot (CQD) solar cells have high potential for realizing an efficient and lightweight energy supply for flexible or wearable electronic devices. To achieve highly efficient and flexible CQD solar cells, the electron transport layer (ETL), extracting electrons from the CQD solid layer, needs to be processed at a low-temperature and should also suppress interfacial recombination. Herein, a highly stable MgZnO nanocrystal (MZO-NC) layer is reported for efficient flexible PbS CQD solar cells. Solar cells fabricated with MZO-NC ETL give a high power conversion efficiency (PCE) of 10.4% and 9.4%, on glass and flexible plastic substrates, respectively. The reported flexible CQD solar cell has the record efficiency to date of flexible CQD solar cells. Detailed theoretical simulations and extensive characterizations reveal that the MZO-NCs significantly enhance charge extraction from CQD solids and diminish the charge accumulation at the ETL/CQD interface, suppressing charge interfacial recombination. These important results suggest that the low-temperature processed MZO-NCs are very promising for use in efficient flexible solar cells or other flexible optoelectronic devices.
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Affiliation(s)
- Xiaoliang Zhang
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
| | - Pralay Kanti Santra
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
| | - Lei Tian
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
| | - Malin B Johansson
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
| | - Håkan Rensmo
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
| | - Erik M J Johansson
- Department of Chemistry-Ångström, Physical Chemistry and ‡Department of Physics and Astronomy, Molecular and Condensed Matter Physics, Uppsala University , 75120 Uppsala, Sweden
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35
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Clark PCJ, Radtke H, Pengpad A, Williamson AI, Spencer BF, Hardman SJO, Leontiadou MA, Neo DCJ, Fairclough SM, Watt AAR, Pis I, Nappini S, Bondino F, Magnano E, Handrup K, Schulte K, Silly MG, Sirotti F, Flavell WR. The passivating effect of cadmium in PbS/CdS colloidal quantum dots probed by nm-scale depth profiling. NANOSCALE 2017; 9:6056-6067. [PMID: 28443889 DOI: 10.1039/c7nr00672a] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/07/2023]
Abstract
Achieving control of the surface chemistry of colloidal quantum dots (CQDs) is essential to fully exploit their properties in solar cells, but direct measurement of the chemistry and electronic structure in the outermost atomic layers is challenging. Here we probe the surface oxidation and passivation of cation-exchanged PbS/CdS core/shell CQDs with sub nm-scale precision using synchrotron-radiation-excited depth-profiling photoemission. We investigate the surface composition of the topmost 1-2.5 nm of the CQDs as a function of depth, for CQDs of varying CdS shell thickness, and examine how the surface changes after prolonged air exposure. We demonstrate that the Cd is localized at the surface of the CQDs. The surface-localized products of oxidation are identified, and the extent of oxidation quantified. We show that oxidised sulfur species are progressively eliminated as Cd replaces Pb at the surface. A sub-monolayer surface 'decoration' of Cd is found to be effective in passivating the CQDs. We show that the measured energy-level alignments at PbS/CdS colloidal quantum dot surfaces differ from those expected on the basis of bulk band offsets, and are strongly affected by the oxidation products. We develop a model for the passivating action of Cd. The optimum shell thickness (of around 0.1 nm, previously found to give maximised power conversion efficiency in PbS/CdS solar cells) is found to correspond to a trade-off between the rate of oxidation and the introduction of a surface barrier to charge transport.
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Affiliation(s)
- Pip C J Clark
- School of Physics and Astronomy and the Photon Science Institute, The University of Manchester, Manchester M13 9PL, UK.
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36
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Aqoma H, Al Mubarok M, Hadmojo WT, Lee EH, Kim TW, Ahn TK, Oh SH, Jang SY. High-Efficiency Photovoltaic Devices using Trap-Controlled Quantum-Dot Ink prepared via Phase-Transfer Exchange. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2017; 29:1605756. [PMID: 28266746 DOI: 10.1002/adma.201605756] [Citation(s) in RCA: 13] [Impact Index Per Article: 1.9] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/26/2016] [Revised: 01/20/2017] [Indexed: 05/19/2023]
Abstract
Colloidal-quantum-dot (CQD) photovoltaic devices are promising candidates for low-cost power sources owing to their low-temperature solution processability and bandgap tunability. A power conversion efficiency (PCE) of >10% is achieved for these devices; however, there are several remaining obstacles to their commercialization, including their high energy loss due to surface trap states and the complexity of the multiple-step CQD-layer-deposition process. Herein, high-efficiency photovoltaic devices prepared with CQD-ink using a phase-transfer-exchange (PTE) method are reported. Using CQD-ink, the fabrication of active layers by single-step coating and the suppression of surface trap states are achieved simultaneously. The CQD-ink photovoltaic devices achieve much higher PCEs (10.15% with a certified PCE of 9.61%) than the control devices (7.85%) owing to improved charge drift and diffusion. Notably, the CQD-ink devices show much lower energy loss than other reported high-efficiency CQD devices. This result reveals that the PTE method is an effective strategy for controlling trap states in CQDs.
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Affiliation(s)
- Havid Aqoma
- Department of Chemistry, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, Republic of Korea
| | - Muhibullah Al Mubarok
- Department of Chemistry, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, Republic of Korea
| | - Wisnu Tantyo Hadmojo
- Department of Chemistry, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, Republic of Korea
| | - Eun-Hye Lee
- Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do, 565-905, Republic of Korea
| | - Tae-Wook Kim
- Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology, Joellabuk-do, 565-905, Republic of Korea
| | - Tae Kyu Ahn
- Department of Energy Science, Sungkyunkwan University, 2066 Seobu-Ro, Jangsan-Gu, Suwon, 440-746, Republic of Korea
| | - Seung-Hwan Oh
- Radiation Research Division for Industry and Environment, Korea Atomic Energy Research Institute (KAERI), 29 Geumgu-gil, Jeongeup-si, Jeollabuk-do, 580-185, Korea
| | - Sung-Yeon Jang
- Department of Chemistry, Kookmin University, 77 Jeongneung-ro, Seongbuk-gu, Seoul, 136-702, Republic of Korea
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37
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Giberti F, Vörös M, Galli G. Design of Heterogeneous Chalcogenide Nanostructures with Pressure-Tunable Gaps and without Electronic Trap States. NANO LETTERS 2017; 17:2547-2553. [PMID: 28287746 DOI: 10.1021/acs.nanolett.7b00283] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Heterogeneous nanostructures, such as quantum dots (QDs) embedded in solid matrices or core-shell nanoparticles, are promising platforms for a wide variety of applications, including phosphors with increased quantum yield, photocatalysis, and solar energy conversion. However, characterizing and controlling their interfacial morphology and defects, which greatly influence their electronic properties, have proven difficult in numerous cases. Here we carried out atomistic calculations on chalcogenide nanostructured materials, i.e., PbSe QDs in CdSe matrices and CdSe embedded in PbSe, and we established how interfacial and core structures affect their electronic properties. In particular, we showed that defects present at interfaces of PbSe nanoparticles and CdSe matrices give rise to detrimental intragap states, degrading the performance of photovoltaic devices. Instead, the electronic gaps of the inverted system (CdSe dots in PbSe) are clean, indicating that this material has superior electronic properties for solar applications. In addition, our calculations predicted that the core structure of CdSe and in turn its band gap may be tuned by applying pressure to the PbSe matrix, providing a means to engineering the properties of new functional materials.
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Affiliation(s)
- Federico Giberti
- Institute for Molecular Engineering, The University of Chicago , 5640 South Ellis Avenue, Chicago, Illinois 60637, United States
| | - Márton Vörös
- Institute for Molecular Engineering, The University of Chicago , 5640 South Ellis Avenue, Chicago, Illinois 60637, United States
- Argonne National Laboratory , 9700 South Cass Avenue, Argonne, Illinois 60439, United States
| | - Giulia Galli
- Institute for Molecular Engineering, The University of Chicago , 5640 South Ellis Avenue, Chicago, Illinois 60637, United States
- Argonne National Laboratory , 9700 South Cass Avenue, Argonne, Illinois 60439, United States
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38
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Crisp RW, Pach GF, Kurley JM, France RM, Reese MO, Nanayakkara SU, MacLeod BA, Talapin DV, Beard MC, Luther JM. Tandem Solar Cells from Solution-Processed CdTe and PbS Quantum Dots Using a ZnTe-ZnO Tunnel Junction. NANO LETTERS 2017; 17:1020-1027. [PMID: 28068765 DOI: 10.1021/acs.nanolett.6b04423] [Citation(s) in RCA: 26] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
We developed a monolithic CdTe-PbS tandem solar cell architecture in which both the CdTe and PbS absorber layers are solution-processed from nanocrystal inks. Due to their tunable nature, PbS quantum dots (QDs), with a controllable band gap between 0.4 and ∼1.6 eV, are a promising candidate for a bottom absorber layer in tandem photovoltaics. In the detailed balance limit, the ideal configuration of a CdTe (Eg = 1.5 eV)-PbS tandem structure assumes infinite thickness of the absorber layers and requires the PbS band gap to be 0.75 eV to theoretically achieve a power conversion efficiency (PCE) of 45%. However, modeling shows that by allowing the thickness of the CdTe layer to vary, a tandem with efficiency over 40% is achievable using bottom cell band gaps ranging from 0.68 and 1.16 eV. In a first step toward developing this technology, we explore CdTe-PbS tandem devices by developing a ZnTe-ZnO tunnel junction, which appropriately combines the two subcells in series. We examine the basic characteristics of the solar cells as a function of layer thickness and bottom-cell band gap and demonstrate open-circuit voltages in excess of 1.1 V with matched short circuit current density of 10 mA/cm2 in prototype devices.
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Affiliation(s)
- Ryan W Crisp
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
- Department of Physics, Colorado School of Mines , Golden, Colorado 80401, United States
| | - Gregory F Pach
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
- Department of Electrical, Computer, and Energy Engineering, University of Colorado , Boulder, Colorado 80309, United States
| | - J Matthew Kurley
- Department of Chemistry and James Franck Institute, University of Chicago , Chicago, Illinois 60637, United States
| | - Ryan M France
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
| | - Matthew O Reese
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
| | | | - Bradley A MacLeod
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
| | - Dmitri V Talapin
- Department of Chemistry and James Franck Institute, University of Chicago , Chicago, Illinois 60637, United States
- Center for Nanoscale Materials, Argonne National Laboratory , Argonne, Illinois 60439, United States
| | - Matthew C Beard
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
| | - Joseph M Luther
- National Renewable Energy Laboratory , Golden, Colorado 80401, United States
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39
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Yang X, Hu L, Deng H, Qiao K, Hu C, Liu Z, Yuan S, Khan J, Li D, Tang J, Song H, Cheng C. Improving the Performance of PbS Quantum Dot Solar Cells by Optimizing ZnO Window Layer. NANO-MICRO LETTERS 2017; 9:24. [PMID: 30460319 PMCID: PMC6223798 DOI: 10.1007/s40820-016-0124-2] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2016] [Accepted: 11/29/2016] [Indexed: 05/05/2023]
Abstract
Comparing with hot researches in absorber layer, window layer has attracted less attention in PbS quantum dot solar cells (QD SCs). Actually, the window layer plays a key role in exciton separation, charge drifting, and so on. Herein, ZnO window layer was systematically investigated for its roles in QD SCs performance. The physical mechanism of improved performance was also explored. It was found that the optimized ZnO films with appropriate thickness and doping concentration can balance the optical and electrical properties, and its energy band align well with the absorber layer for efficient charge extraction. Further characterizations demonstrated that the window layer optimization can help to reduce the surface defects, improve the heterojunction quality, as well as extend the depletion width. Compared with the control devices, the optimized devices have obtained an efficiency of 6.7% with an enhanced V oc of 18%, J sc of 21%, FF of 10%, and power conversion efficiency of 58%. The present work suggests a useful strategy to improve the device performance by optimizing the window layer besides the absorber layer.
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Affiliation(s)
- Xiaokun Yang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055 People’s Republic of China
| | - Long Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Hui Deng
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Keke Qiao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Chao Hu
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Zhiyong Liu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Shengjie Yuan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Jahangeer Khan
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Dengbing Li
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Haisheng Song
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, 430074 People’s Republic of China
| | - Chun Cheng
- Department of Materials Science and Engineering and Shenzhen Key Laboratory of Nanoimprint Technology, South University of Science and Technology, Shenzhen, 518055 People’s Republic of China
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40
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Liang X, Bai S, Wang X, Dai X, Gao F, Sun B, Ning Z, Ye Z, Jin Y. Colloidal metal oxide nanocrystals as charge transporting layers for solution-processed light-emitting diodes and solar cells. Chem Soc Rev 2017; 46:1730-1759. [DOI: 10.1039/c6cs00122j] [Citation(s) in RCA: 84] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
This review bridges the chemistry of colloidal oxide nanocrystals and their application as charge transporting interlayers in solution-processed optoelectronics.
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Affiliation(s)
- Xiaoyong Liang
- State Key Laboratory of Silicon Materials
- School of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Sai Bai
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- SE-581 83 Linköping
- Sweden
| | - Xin Wang
- State Key Laboratory of Silicon Materials
- School of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Xingliang Dai
- State Key Laboratory of Silicon Materials
- School of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Feng Gao
- Department of Physics
- Chemistry and Biology (IFM)
- Linköping University
- SE-581 83 Linköping
- Sweden
| | - Baoquan Sun
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices
- Institute of Functional Nano & Soft Materials (FUNSOM)
- Soochow University
- Suzhou 215123
- People's Republic of China
| | | | - Zhizhen Ye
- State Key Laboratory of Silicon Materials
- School of Materials Science and Engineering
- Zhejiang University
- Hangzhou 310027
- People's Republic of China
| | - Yizheng Jin
- Center for Chemistry of High-Performance & Novel Materials
- State Key Laboratory of Silicon Materials
- Department of Chemistry
- Zhejiang University
- Hangzhou 310027
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41
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Kim J, Jeong BG, Roh H, Song J, Park M, Lee DC, Bae WK, Lee C. Influence of External Pressure on the Performance of Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2016; 8:23947-23952. [PMID: 27549664 DOI: 10.1021/acsami.6b07771] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
We report the influence of post-treatment via the external pressure on the device performance of quantum dot (QD) solar cells. The structural analysis together with optical and electrical characterization on QD solids reveal that the external pressure compacts QD active layers by removing the mesoscopic voids and enhances the charge carrier transport along QD solids, leading to significant increase in JSC of QD solar cells. Increasing the external pressure, by contrast, accompanies reduction in FF and VOC, yielding the trade-off relationship among JSC and FF and VOC in PCE of devices. Optimization at the external pressure in the present study at 1.4-1.6 MPa enables us to achieve over 10% increase in PCE of QD solar cells. The approach and results show that the control over the organization of QDs is the key for the charge transport properties in ensemble and also offer simple yet effective mean to enhance the electrical performance of transistors and solar cells using QDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Electrical and Computer Engineering, Global Frontier for Multiscale Energy Systems, Seoul National University , Seoul 08826, Republic of Korea
| | - Byeong Guk Jeong
- Department of Chemical and Biomolecular Engineering (BK21+ Program), KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Republic of Korea
| | - Heebum Roh
- Department of Electrical and Computer Engineering, Global Frontier for Multiscale Energy Systems, Seoul National University , Seoul 08826, Republic of Korea
| | - Jiyun Song
- Department of Electrical and Computer Engineering, Global Frontier for Multiscale Energy Systems, Seoul National University , Seoul 08826, Republic of Korea
| | - Myeongjin Park
- Department of Electrical and Computer Engineering, Global Frontier for Multiscale Energy Systems, Seoul National University , Seoul 08826, Republic of Korea
| | - Doh C Lee
- Department of Chemical and Biomolecular Engineering (BK21+ Program), KAIST Institute for the Nanocentury, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Republic of Korea
| | - Wan Ki Bae
- Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology (KIST) , Seoul 02792, Republic of Korea
| | - Changhee Lee
- Department of Electrical and Computer Engineering, Global Frontier for Multiscale Energy Systems, Seoul National University , Seoul 08826, Republic of Korea
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42
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Lin Z, Yang Z, Wang P, Wei G, He A, Guo W, Wang M. Schottky–ohmic converted contact, fast-response, infrared PbTe photodetector with stable photoresponse in air. RSC Adv 2016. [DOI: 10.1039/c6ra22581k] [Citation(s) in RCA: 4] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022] Open
Abstract
In this paper, TBAI treated PbTe CQD film photodetectors with fast-response show infrared photoelectronic properties in air.
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Affiliation(s)
- Zhonghai Lin
- Key Laboratory of Intelligent Information Processing in Universities of Shandong
- Shandong Business and Technology University
- Yantai
- China
| | - Zhi Yang
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Xi'an Jiaotong University
- Xi'an 710049
| | - Pingjian Wang
- Key Laboratory of Intelligent Information Processing in Universities of Shandong
- Shandong Business and Technology University
- Yantai
- China
| | - Guangfen Wei
- Key Laboratory of Intelligent Information Processing in Universities of Shandong
- Shandong Business and Technology University
- Yantai
- China
| | - Aixiang He
- Key Laboratory of Intelligent Information Processing in Universities of Shandong
- Shandong Business and Technology University
- Yantai
- China
| | - Wen Guo
- Key Laboratory of Intelligent Information Processing in Universities of Shandong
- Shandong Business and Technology University
- Yantai
- China
| | - Minqiang Wang
- Electronic Materials Research Laboratory (EMRL)
- Key Laboratory of Education Ministry
- International Center for Dielectric Research (ICDR)
- Xi'an Jiaotong University
- Xi'an 710049
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