1
|
Yang J, Xie J, Jiang S, Zhang K, Li Q, Wang Y, Wang T, Su F. Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe 2 Ribbons. J Phys Chem Lett 2024; 15:4276-4285. [PMID: 38607948 DOI: 10.1021/acs.jpclett.4c00765] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic and optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved optical pump-probe spectroscopy. In thin PdSe2 ribbons with a semiconductor phase, the photocarrier dynamics are found to be dominated by intraband hot-carrier cooling, interband recombination, and the exciton effect, showing weak crystalline orientation dependences. Conversely, in thick semimetal-phase PdSe2 ribbons, the photocarrier relaxations governed by the electron-optical/acoustic phonon scattering strongly depend on the sample orientation, albeit with a degradation in in-plane anisotropy following hot-carrier cooling. Furthermore, we analyze the correlations between photocarrier dynamics and anisotropic energy dispersions of electronic structures across a wide range in k space, as well as the contributions from the anisotropic electron-phonon couplings. Our study provides crucial insights for developing polarization-sensitive photoelectronic devices based on PdSe2.
Collapse
Affiliation(s)
- Jin Yang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- Department of Materials Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jiafeng Xie
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Shaolong Jiang
- Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Kai Zhang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Qi Li
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Yunfeng Wang
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Tianwu Wang
- GBA Branch of Aerospace Information Research Institute, Chinese Academy of Sciences, Guangzhou 510700, China
- Guangdong Provincial Key Laboratory of Terahertz Quantum Electromagnetics, Guangzhou 510700, China
| | - Fuhai Su
- Key Laboratory of Materials Physics, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| |
Collapse
|
2
|
Lyu X, Li Y, Li X, Liu X, Xiao J, Xu W, Jiang P, Yang H, Wu C, Hu X, Peng LY, Gong Q, Yang S, Gao Y. Layer-dependent ultrafast carrier dynamics of PdSe 2 investigated by photoemission electron microscopy. NANOSCALE 2024. [PMID: 38656387 DOI: 10.1039/d4nr00281d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
For atomically thin two-dimensional materials, variations in layer thickness can result in significant changes in the electronic energy band structure and physicochemical properties, thereby influencing the carrier dynamics and device performance. In this work, we employ time- and energy-resolved photoemission electron microscopy to reveal the ultrafast carrier dynamics of PdSe2 with different layer thicknesses. We find that for few-layer PdSe2 with a semiconductor phase, an ultrafast hot carrier cooling on a timescale of approximately 0.3 ps and an ultrafast defect trapping on a timescale of approximately 1.3 ps are unveiled, followed by a slower decay of approximately tens of picoseconds. However, for bulk PdSe2 with a semimetal phase, only an ultrafast hot carrier cooling and a slower decay of approximately tens of picoseconds are observed, while the contribution of defect trapping is suppressed with the increase of layer number. Theoretical calculations of the electronic energy band structure further confirm the transition from a semiconductor to a semimetal. Our work demonstrates that TR- and ER-PEEM with ultrahigh spatiotemporal resolution and wide-field imaging capability has great advantages in revealing the intricate details of ultrafast carrier dynamics of nanomaterials.
Collapse
Affiliation(s)
- Xiaying Lyu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Yaolong Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Xiaofang Li
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Xiulan Liu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Jingying Xiao
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Pengzuo Jiang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
| | - Hong Yang
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Chengyin Wu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Xiaoyong Hu
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Liang-You Peng
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Qihuang Gong
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
| | - Yunan Gao
- State Key Laboratory for Mesoscopic Physics & Department of Physics, Collaborative Innovation Center of Quantum Matter and Frontiers Science Center for Nano-optoelectronics, Beijing Academy of Quantum Information Sciences, Peking University, Beijing 100871, China.
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| |
Collapse
|
3
|
Li M, Guan W, Liu C, Xing F, Zheng Y, Di Y, Cao G, Wei S, Wang Y, Yang G, Yu L, Gan Z. Room-Temperature High-Performance Photodetector and Phototransistor Based on PdSe 2/ZnIn 2S 4 Alloy Heterojunctions. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2309499. [PMID: 38624172 DOI: 10.1002/smll.202309499] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2023] [Revised: 03/12/2024] [Indexed: 04/17/2024]
Abstract
Various semiconductor devices have been developed based on 2D heterojunction materials owing to their distinctive optoelectronic properties. However, to achieve efficient charge transfer at their interface remains a major challenge. Herein, an alloy heterojunction concept is proposed. The sulfur vacancies in ZnIn2S4 are filled with selenium atoms of PdSe2. This chemically bonded heterojunction can significantly enhance the separation of photocarriers, providing notable advantages in the field of photoelectric conversion. As a demonstration, a two-terminal photodetector based on the PdSe2/ZnIn2S4 heterojunction materials is fabricated. The photodetector exhibits stable operation in ambient conditions, showcasing superior performance in terms of large photocurrent, high responsivity (48.8 mA W-1) and detectivity (1.98 × 1011 Jones). To further validate the excellent optoelectronic performance of the heterojunction, a tri-terminal phototransistor is also fabricated. Benefiting from gate voltage modulation, the photocurrent is amplified to milliampere level, and the responsivity is increased to 229.14 mA W-1. These findings collectively demonstrate the significant potential of the chemically bonded PdSe2/ZnIn2S4 alloy heterojunction for future optoelectronic applications.
Collapse
Affiliation(s)
- Mingchao Li
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Wei Guan
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Cihui Liu
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Fangjian Xing
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Yubin Zheng
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
| | - Yunsong Di
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
| | - Guiyuan Cao
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Shibiao Wei
- Nanophotonics Research Center, Shenzhen Key Laboratory of Micro-Scale Optical Information Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ying Wang
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Guofeng Yang
- School of Science, Jiangsu Provincial Research Center of Light Industrial Optoelectronic Engineering and Technology, Jiangnan University, Wuxi, 214122, P. R. China
| | - Liyan Yu
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
| | - Zhixing Gan
- Center for Future Optoelectronic Functional Materials, School of Computer and Electronic Information/School of Artificial Intelligence, Nanjing Normal University, Nanjing, 210023, China
- School of Materials Science and Engineering, Qingdao University of Science and Technology, Qingdao, 266042, P. R. China
- Dalian University of Technology Corporation of Changshu Research Institution, Suzhou, 215500, P. R. China
| |
Collapse
|
4
|
Wang P, Li Z, Xia X, Zhang J, Lan Y, Zhu L, Ke Q, Mu H, Lin S. Anisotropic Te/PdSe 2 Van Der Waals Heterojunction for Self-Powered Broadband and Polarization-Sensitive Photodetection. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401216. [PMID: 38593322 DOI: 10.1002/smll.202401216] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/15/2024] [Revised: 03/16/2024] [Indexed: 04/11/2024]
Abstract
Polarization-sensitive broadband optoelectronic detection is crucial for future sensing, imaging, and communication technologies. Narrow bandgap 2D materials, such as Te and PdSe2, show promise for these applications, yet their polarization performance is limited by inherent structural anisotropies. In this work, a self-powered, broadband photodetector utilizing a Te/PdSe2 van der Waals (vdWs) heterojunction, with orientations meticulously tailored is introduced through polarized Raman optical spectra and tensor calculations to enhance linear polarization sensitivity. The device exhibits anisotropy ratios of 1.48 at 405 nm, 3.56 at 1550 nm, and 1.62 at 4 µm, surpassing previously-reported photodetectors based on pristine Te and PdSe2. Additionally, it exhibits high responsivity (617 mA W-1 at 1550 nm), specific detectivity (5.27 × 1010 Jones), fast response (≈4.5 µs), and an extended spectral range beyond 4 µm. The findings highlight the significance of orientation-engineered heterostructures in enhancing polarization-sensitive photodetectors and advancing optoelectronic technology.
Collapse
Affiliation(s)
- Pu Wang
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Zhao Li
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Xue Xia
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Jingni Zhang
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
- School of Automation and Information Engineering, Xi'an University of Technology, Xi'an, 710048, P. R. China
| | - Yingying Lan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lu Zhu
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Qingqing Ke
- Guangdong Provincial Key Laboratory of Optoelectronic Information Processing Chips and Systems, School of Microelectronics Science and Technology, Sun Yat-sen University, Zhuhai, 519082, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan, 523808, China
| |
Collapse
|
5
|
Li M, Sun H, Liu C, Zhou J, Zhang G, Zhang L, Zhao Y. Abnormal Thickness-Dependent Thermal Transport in Suspended 2D PdSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2311125. [PMID: 38342583 DOI: 10.1002/smll.202311125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 01/26/2024] [Indexed: 02/13/2024]
Abstract
Research on 2D materials originally focused on the highly symmetrical materials like graphene, h-BN. Recently, 2D materials with low-symmetry lattice such as PdSe2 have drawn extensive attention, due to the interesting layer-dependent bandgap, promising mechanical properties and excellent thermoelectric performance, etc. In this work, the phonon thermal transport is studied in PdSe2 with a pentagonal fold structure. The thermal conductivity of PdSe2 flakes with different thicknesses ranging from few nanometers to several tens of nanometers is measured through the thermal bridge method, where the thermal conductivity increases from 5.04 W mk-1 for 60 nm PdSe2 to 34.51 W mk-1 for the few-layer one. The atomistic modelings uncover that with the thickness thinning down, the lattice of PdSe2 becomes contracted and the phonon group velocity is enhanced, leading to the abnormal increase in the thermal conductivity. And the upshift of the optical phonon modes contributes to the increase of the thermal conductivity as well by creating less acoustic phonon scattering as the thickness reduces. This study probes the interesting abnormal thickness-dependent thermal transport in 2D materials, which promotes the potential thermal management at nanoscale.
Collapse
Affiliation(s)
- Meilin Li
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Huanhuan Sun
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Chenhan Liu
- Micro- and Nano-scale Thermal Measurement and Thermal Management Laboratory, Ministry of Education Key Laboratory of NSLSCS, School of Energy and Mechanical Engineering, Nanjing Normal University, Nanjing, 210023, P. R. China
| | - Jun Zhou
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Gang Zhang
- Institute of High Performance Computing, Agency for Science, Technology and Research, Singapore, 138632, Singapore
| | - Lifa Zhang
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| | - Yunshan Zhao
- Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University, Nanjing, 210023, China
| |
Collapse
|
6
|
Zhang Y, Tian H, Li H, Yoon C, Nelson RA, Li Z, Watanabe K, Taniguchi T, Smirnov D, Kawakami RK, Goldberger JE, Zhang F, Lau CN. Quantum octets in high mobility pentagonal two-dimensional PdSe 2. Nat Commun 2024; 15:761. [PMID: 38278796 PMCID: PMC10817936 DOI: 10.1038/s41467-024-44972-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Accepted: 01/11/2024] [Indexed: 01/28/2024] Open
Abstract
Two-dimensional (2D) materials have drawn immense interests in scientific and technological communities, owing to their extraordinary properties and their tunability by gating, proximity, strain and external fields. For electronic applications, an ideal 2D material would have high mobility, air stability, sizable band gap, and be compatible with large scale synthesis. Here we demonstrate air stable field effect transistors using atomically thin few-layer PdSe2 sheets that are sandwiched between hexagonal BN (hBN), with large saturation current > 350 μA/μm, and high field effect mobilities of ~ 700 and 10,000 cm2/Vs at 300 K and 2 K, respectively. At low temperatures, magnetotransport studies reveal unique octets in quantum oscillations that persist at all densities, arising from 2-fold spin and 4-fold valley degeneracies, which can be broken by in-plane and out-of-plane magnetic fields toward quantum Hall spin and orbital ferromagnetism.
Collapse
Affiliation(s)
- Yuxin Zhang
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Haidong Tian
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Huaixuan Li
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
- Department of Physics, Carnegie Mellon University, Pittsburgh, PA, 15213, USA
| | - Chiho Yoon
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Ryan A Nelson
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Ziling Li
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Dmitry Smirnov
- National High Magnetic Field Laboratory, Tallahassee, FL, 32310, USA
| | - Roland K Kawakami
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA
| | - Joshua E Goldberger
- Department of Chemistry and Biochemistry, The Ohio State University, Columbus, OH, 43210, USA
| | - Fan Zhang
- Department of Physics, The University of Texas at Dallas, 800 West Campbell Road, Richardson, TX, 75080-3021, USA
| | - Chun Ning Lau
- Department of Physics, The Ohio State University, Columbus, OH, 43210, USA.
| |
Collapse
|
7
|
Lee S, Kim YJ, Yoo H. Split-Gate: Harnessing Gate Modulation Power in Thin-Film Electronics. MICROMACHINES 2024; 15:164. [PMID: 38276863 PMCID: PMC10820144 DOI: 10.3390/mi15010164] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2023] [Revised: 01/16/2024] [Accepted: 01/19/2024] [Indexed: 01/27/2024]
Abstract
With the increase in electronic devices across various applications, there is rising demand for selective carrier control. The split-gate consists of a gate electrode divided into multiple parts, allowing for the independent biasing of electric fields within the device. This configuration enables the potential formation of both p- and n-channels by injecting holes and electrons owing to the presence of the two gate electrodes. Applying voltage to the split-gate allows for the control of the Fermi level and, consequently, the barrier height in the device. This facilitates band bending in unipolar transistors and allows ambipolar transistors to operate as if unipolar. Moreover, the split-gate serves as a revolutionary tool to modulate the contact resistance by controlling the barrier height. This approach enables the precise control of the device by biasing the partial electric field without limitations on materials, making it adaptable for various applications, as reported in various types of research. However, the gap length between gates can affect the injection of the electric field for the precise control of carriers. Hence, the design of the gap length is a critical element for the split-gate structure. The primary investigation in this review is the introduction of split-gate technology applied in various applications by using diverse materials, the methods for forming the split-gate in each device, and the operational mechanisms under applied voltage conditions.
Collapse
Affiliation(s)
- Subin Lee
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Yeong Jae Kim
- Korea Institute of Ceramic Engineering and Technology, Ceramic Total Solution Center, Icheon 17303, Republic of Korea
| | - Hocheon Yoo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| |
Collapse
|
8
|
Obaidulla SM, Supina A, Kamal S, Khan Y, Kralj M. van der Waals 2D transition metal dichalcogenide/organic hybridized heterostructures: recent breakthroughs and emerging prospects of the device. NANOSCALE HORIZONS 2023; 9:44-92. [PMID: 37902087 DOI: 10.1039/d3nh00310h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/31/2023]
Abstract
The near-atomic thickness and organic molecular systems, including organic semiconductors and polymer-enabled hybrid heterostructures, of two-dimensional transition metal dichalcogenides (2D-TMDs) can modulate their optoelectronic and transport properties outstandingly. In this review, the current understanding and mechanism of the most recent and significant breakthrough of novel interlayer exciton emission and its modulation by harnessing the band energy alignment between TMDs and organic semiconductors in a TMD/organic (TMDO) hybrid heterostructure are demonstrated. The review encompasses up-to-date device demonstrations, including field-effect transistors, detectors, phototransistors, and photo-switchable superlattices. An exploration of distinct traits in 2D-TMDs and organic semiconductors delves into the applications of TMDO hybrid heterostructures. This review provides insights into the synthesis of 2D-TMDs and organic layers, covering fabrication techniques and challenges. Band bending and charge transfer via band energy alignment are explored from both structural and molecular orbital perspectives. The progress in emission modulation, including charge transfer, energy transfer, doping, defect healing, and phase engineering, is presented. The recent advancements in 2D-TMDO-based optoelectronic synaptic devices, including various 2D-TMDs and organic materials for neuromorphic applications are discussed. The section assesses their compatibility for synaptic devices, revisits the operating principles, and highlights the recent device demonstrations. Existing challenges and potential solutions are discussed. Finally, the review concludes by outlining the current challenges that span from synthesis intricacies to device applications, and by offering an outlook on the evolving field of emerging TMDO heterostructures.
Collapse
Affiliation(s)
- Sk Md Obaidulla
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Department of Condensed Matter and Materials Physics, S. N. Bose National Centre for Basic Sciences, Sector III, Block JD, Salt Lake, Kolkata 700106, India
| | - Antonio Supina
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
- Chair of Physics, Montanuniversität Leoben, Franz Josef Strasse 18, 8700 Leoben, Austria
| | - Sherif Kamal
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| | - Yahya Khan
- Department of Physics, Karakoram International university (KIU), Gilgit 15100, Pakistan
| | - Marko Kralj
- Center of Excellence for Advanced Materials and Sensing Devices, Institute of Physics, Bijenička Cesta 46, HR-10000 Zagreb, Croatia.
| |
Collapse
|
9
|
Jiang J, Xu W, Sun Z, Fu L, Zhang S, Qin B, Fan T, Li G, Chen S, Yang S, Ge W, Shen B, Tang N. Wavelength-Controlled Photoconductance Polarity Switching via Harnessing Defects in Doped PdSe 2 for Artificial Synaptic Features. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306068. [PMID: 37963834 DOI: 10.1002/smll.202306068] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/19/2023] [Revised: 10/23/2023] [Indexed: 11/16/2023]
Abstract
Optoelectronic synapses are currently drawing significant attention as fundamental building blocks of neuromorphic computing to mimic brain functions. In this study, a two-terminal synaptic device based on a doped PdSe2 flake is proposed to imitate the key neural functions in an optical pathway. Due to the wavelength-dependent desorption of oxygen clusters near the intrinsic selenide vacancy defects, the doped PdSe2 photodetector achieves a high negative photoresponsivity of -7.8 × 103 A W-1 at 473 nm and a positive photoresponsivity of 181 A W-1 at 1064 nm. This wavelength-selective bi-direction photoresponse endows an all-optical pathway to imitate the fundamental functions of artificial synapses on a device level, such as psychological learning and forgetting capability, as well as dynamic logic functions. The underpinning photoresponse is further demonstrated on a flexible platform, providing a viable technology for neuromorphic computing in wearable electronics. Furthermore, the p-type doping results in an effective increase of the channel's electrical conductivity and a significant reduction in power consumption. Such low-power-consuming optical synapses with simple device architecture and low-dimensional features demonstrate tremendous promise for building multifunctional artificial neuromorphic systems in the future.
Collapse
Affiliation(s)
- Jiayang Jiang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Weiting Xu
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Zhenhao Sun
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Fu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shixiong Zhang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Biao Qin
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Teng Fan
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Guoping Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shuaiyu Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Shengxue Yang
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Weikun Ge
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| | - Ning Tang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China
| |
Collapse
|
10
|
Wang S, Bai Y, Liu M, Zong X, Wang W, Mu Q, Han T, Li F, Wang S, Shan L, Long M. A high-performance long-wave infrared photodetector based on a WSe 2/PdSe 2 broken-gap heterodiode. NANOSCALE 2023; 15:17006-17013. [PMID: 37831435 DOI: 10.1039/d3nr03248e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Layered narrow bandgap quasi-two-dimensional (2D) transition metal dichalcogenides (TMDs) demonstrated excellent performance in long-wave infrared (LWIR) detection. However, the low light on/off ratio and specific detectivity (D*) due to the high dark current of the device fabricated using a single narrow bandgap material hindered its wide application. Herein, we report a type-III broken-gap band-alignment WSe2/PdSe2 van der Waals (vdW) heterostructure. The heterodiode device has a prominently low dark current and exhibits a high photoresponsivity (R) of 55.3 A W-1 and a high light on/off ratio >105 in the visible range. Notably, the WSe2/PdSe2 heterodiode shows an excellent uncooled LWIR response, with an R of ∼0.3 A W-1, a low noise equivalence power (NEP) of 4.5 × 10-11 W Hz-1/2, and a high D* of 1.8 × 108 cm Hz1/2 W-1. This work provides a new approach for designing high-performance room-temperature operational LWIR photodetectors.
Collapse
Affiliation(s)
- Suofu Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Yajie Bai
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingli Liu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Xiaolan Zong
- Institute for Quantum Control and Quantum Information, School of Physics and Materials Engineering, Hefei Normal University, Hefei 230601, China
| | - Wenhui Wang
- School of Physics, Southeast University, Nanjing 211189, China
| | - Qingge Mu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Tao Han
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Feng Li
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Shaoliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Lei Shan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| | - Mingsheng Long
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, 111 Jiu Long Road, Hefei 230601, China.
| |
Collapse
|
11
|
Ye XJ, Wang XH, Cao HB, Lu Z, Liu CS. Penta-SiCN monolayer as a well-balanced performance anode material for Li-ion batteries. Phys Chem Chem Phys 2023; 25:29224-29232. [PMID: 37873573 DOI: 10.1039/d3cp03236a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Lithium-ion batteries (LIBs) remain irreplaceable for clean energy storage applications. The intrinsic metallic nature of penta-SiCN ensures its promising application in the electrodes of LIBs. Using first-principles calculations, we evaluate the performance of the intrinsic metallic penta-SiCN monolayer as the anode material for LIBs. Penta-SiCN exhibits a low diffusion energy barrier (0.107 eV) for Li atom migration on Si18C18N18, while the diffusion energy barrier for vacancy migration on Li17Si18C18N18 is only 0.006 eV. Additionally, penta-SiCN possesses a high theoretical capacity of 1485.98 mA h g-1, average open-circuit voltage of 0.97 V, and small volume expansion of 1%. Remarkably, penta-SiCN exhibits robust wettability towards the electrolytes (solvent molecules and metal salts) widely used in commercial LIBs, indicating the excellent compatibility in electrode applications. These intriguing theoretical findings make penta-SiCN a high performance anode material for LIBs.
Collapse
Affiliation(s)
- Xiao-Juan Ye
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Xiao-Han Wang
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Hong-Bao Cao
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Zheng Lu
- College of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China
| | - Chun-Sheng Liu
- College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
| |
Collapse
|
12
|
Chen H, Kuklin A, Xiao J, Al-Hartomy OA, Al-Ghamdi A, Wageh S, Zhang Y, Ågren H, Gao L, Zhang H. Direct Observation of Photon Induced Giant Band Renormalization in 2D PdSe 2 Dichalcogenide by Transient Absorption Spectroscopy. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2302760. [PMID: 37469206 DOI: 10.1002/smll.202302760] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/18/2023] [Indexed: 07/21/2023]
Abstract
Insight into fundamental light-matter interaction as well as underlying photo-physical processes is crucial for the development of novel optoelectronic devices. Palladium diselenide (PdSe2 ), an important representative of emerging 2D noble metal dichalcogenides, has gain considerable attention owing to its unique optical, physical, and chemical properties. In this study, 2D PdSe2 nanosheets (NSs) are prepared using the liquid-phase exfoliation method. A broadband carrier relaxation dynamics from visible to near-infrared bands are revealed using a time-resolved transient absorption spectrometer, giving results that indicate band filling and bandgap renormalization (BGR) effects in the 2D PdSe2 NSs. The observed blue-shift of the transient absorption spectra at the primary stage and the subsequent red-shift can be ascribed to this BGR effect. These findings reveal the many-body character of the 2D TMDs material and may hold keys for applications in the field of optoelectronics and ultrafast photonics.
Collapse
Affiliation(s)
- Hualong Chen
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Artem Kuklin
- Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Sweden
| | - Jing Xiao
- College of Physics and Electronic Engineering, Taishan University, Taian, 271000, China
| | - Omar A Al-Hartomy
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Ahmed Al-Ghamdi
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Swelm Wageh
- Department of Physics, Faculty of Science, King Abdulaziz University, Jeddah, 21589, Saudi Arabia
| | - Yule Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| | - Hans Ågren
- Department of Physics and Astronomy, Uppsala University, Uppsala, SE-75120, Sweden
| | - Lingfeng Gao
- College of Material Chemistry and Chemical Engineering, Key Laboratory of Organosilicon Chemistry and Material Technology, Ministry of Education, Key Laboratory of Organosilicon Material Technology, Hangzhou Normal University, Hangzhou, 311121, China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, China
| |
Collapse
|
13
|
Shen Y, Zhang C, Wang Q. Type-1 Pentagonal Tiling Realized in 2D Penta-SrP 2 Sheet. J Phys Chem Lett 2023; 14:8734-8740. [PMID: 37737655 DOI: 10.1021/acs.jpclett.3c02329] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/23/2023]
Abstract
According to the systematic classification of pentagon-based two-dimensional (2D) materials [ Phys. Rep. 2022, 964, 1], only type-2 and type-4 out of the 15 pentagonal tiling patterns have been realized in 2D materials so far. Here, we propose the first stable pentagon-based 2D material characterized by the type-1 pentagonal tiling pattern named penta-SrP2. We find that penta-SrP2 is not only thermally and mechanically stable but also dynamically stable when the temperature is above 200 K derived from the calculations by taking both phonon renormalization and thermal expansion into consideration. Moreover, the penta-SrP2 sheet is semiconducting with an indirect band gap of 0.96 eV. These findings expand the family of pentagon-based 2D materials in morphology and provide a new perspective to explore the dynamical stability of high-temperature phases.
Collapse
Affiliation(s)
- Yiheng Shen
- Materials Genome Institute, Shanghai University, Shanghai 200444, China
- School of Materials Science and Engineering, CAPT, BKL-MEMD, Peking University, Beijing 100871, China
| | - Chenxin Zhang
- School of Materials Science and Engineering, CAPT, BKL-MEMD, Peking University, Beijing 100871, China
| | - Qian Wang
- School of Materials Science and Engineering, CAPT, BKL-MEMD, Peking University, Beijing 100871, China
| |
Collapse
|
14
|
Li G, Zhang X, Wang Y, Bai Z, Zhao H, He J, He D. Ultrafast transient absorption measurements of photocarrier dynamics in PdSe 2. NANOSCALE 2023; 15:14994-14999. [PMID: 37664909 DOI: 10.1039/d3nr03173j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/05/2023]
Abstract
We investigate the photocarrier dynamics in bulk PdSe2, a layered transition metal dichalcogenide with a novel pentagonal structure and unique electronic and optical properties. Using femtosecond transient absorption microscopy, we study the behavior of photocarriers in mechanically exfoliated bulk PdSe2 flakes at room temperature. By employing a 400 nm ultrafast laser pulse, electron-hole pairs are generated, and their dynamics are probed using an 800 nm detection pulse. Our findings reveal that the lifetime of photocarriers in bulk PdSe2 is approximately 210 ps. Furthermore, by spatially resolving the differential reflection signal, we determine a photocarrier diffusion coefficient of about 7.3 cm2 s-1. Based on these results, we estimate a diffusion length of around 400 nm and a photocarrier mobility of approximately 300 cm2 V-1 s-1. These results shed light on the ultrafast optoelectronic properties of PdSe2, offer valuable insights into photocarriers in this emerging material, and enable design of high-performance optoelectronic devices based on PdSe2.
Collapse
Affiliation(s)
- Guili Li
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Zhiying Bai
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045, USA.
| | - Jiaqi He
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing 100029, China.
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing 100044, China.
| |
Collapse
|
15
|
Lee B, Jeong BJ, Choi KH, Cho S, Jeon J, Kang J, Zhang X, Bang HS, Oh HS, Lee JH, Yu HK, Choi JY. Fabrication of a Field-Effect Transistor Based on 2D Novel Ternary Chalcogenide PdPS. ACS APPLIED MATERIALS & INTERFACES 2023; 15:42891-42899. [PMID: 37657071 DOI: 10.1021/acsami.3c09679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/03/2023]
Abstract
Two-dimensional (2D) palladium phosphide sulfide (PdPS) has garnered significant attention, owing to its exotic physical properties originating from the distinct Cairo pentagonal tiling topology. Nevertheless, the properties of PdPS remain unexplored, especially for electronic devices. In this study, we introduce the thickness-dependent electrical characteristics of PdPS flakes into fabricated field-effect transistors (FETs). The broad thickness variation of the PdPS flakes, ranging from 0.7-306 nm, is prepared by mechanical exfoliation, utilizing large bulk crystals synthesized via chemical vapor transport. We evaluate this variation and confirm a high electron mobility of 14.4 cm2 V-1 s-1 and Ion/Ioff > 107. Furthermore, the 6.8 nm-thick PdPS FET demonstrates a negligible Schottky barrier height at the gold electrode contact, as evidenced by the measurement of the temperature-dependent transfer characteristics. Consequently, we adjusted the Fowler-Nordheim tunneling mechanism to elucidate the charge-transport mechanism, revealing a modulated mobility variation from 14.4 to 41.2 cm2 V-1 s-1 with an increase in the drain voltage from 1 to 5 V. The present findings can broaden the understanding of the unique properties of PdPS, highlighting its potential as a 2D ternary chalcogenide in future electronic device applications.
Collapse
Affiliation(s)
- Bom Lee
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jinsu Kang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xiaojie Zhang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hyeon-Seok Bang
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
| | - Hyung-Suk Oh
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- Clean Energy Research Center, Korea Institute of Science and Technology, Seoul 02792, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- KIST-SKKU Carbon-Neutral Research Center, Sungkyunkwan University, Suwon 16419, Republic of Korea
| |
Collapse
|
16
|
Li X, Zhou P, Hu X, Rivers E, Watanabe K, Taniguchi T, Akinwande D, Friedman JS, Incorvia JAC. Cascaded Logic Gates Based on High-Performance Ambipolar Dual-Gate WSe 2 Thin Film Transistors. ACS NANO 2023. [PMID: 37377371 DOI: 10.1021/acsnano.3c03932] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2023]
Abstract
Ambipolar dual-gate transistors based on low-dimensional materials, such as graphene, carbon nanotubes, black phosphorus, and certain transition metal dichalcogenides (TMDs), enable reconfigurable logic circuits with a suppressed off-state current. These circuits achieve the same logical output as complementary metal-oxide semiconductor (CMOS) with fewer transistors and offer greater flexibility in design. The primary challenge lies in the cascadability and power consumption of these logic gates with static CMOS-like connections. In this article, high-performance ambipolar dual-gate transistors based on tungsten diselenide (WSe2) are fabricated. A high on-off ratio of 108 and 106, a low off-state current of 100 to 300 fA, a negligible hysteresis, and an ideal subthreshold swing of 62 and 63 mV/dec are measured in the p- and n-type transport, respectively. We demonstrate cascadable and cascaded logic gates using ambipolar TMD transistors with minimal static power consumption, including inverters, XOR, NAND, NOR, and buffers made by cascaded inverters. A thorough study of both the control gate and the polarity gate behavior is conducted. The noise margin of the logic gates is measured and analyzed. The large noise margin enables the implementation of VT-drop circuits, a type of logic with reduced transistor number and simplified circuit design. Finally, the speed performance of the VT-drop and other circuits built by dual-gate devices is qualitatively analyzed. This work makes advancements in the field of ambipolar dual-gate TMD transistors, showing their potential for low-power, high-speed, and more flexible logic circuits.
Collapse
Affiliation(s)
- Xintong Li
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Peng Zhou
- Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States
| | - Xuan Hu
- Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States
| | - Ethan Rivers
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Deji Akinwande
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | - Joseph S Friedman
- Department of Electrical and Computer Engineering, The University of Texas at Dallas, Richardson, Texas 75080-3021, United States
| | - Jean Anne C Incorvia
- Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| |
Collapse
|
17
|
Xiao F, Lei W, Wang W, Ma Y, Gong X, Ming X. Layer-dependent electronic structures and optical properties of two-dimensional PdSSe. Phys Chem Chem Phys 2023; 25:11827-11838. [PMID: 37067819 DOI: 10.1039/d3cp00022b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/18/2023]
Abstract
Two-dimensional (2D) layered palladium dichalcogenides PdX2 (X = S and Se) have attracted increasing interest due to their tunable electronic structure and abundant physicochemical properties. Recently, as the sister material of PdX2, PdSSe has received increasing attention and shows great promise for technological applications and fundamental research. In the present study, we focus on the layer-dependent geometry, electronic structure, and optical properties of PdSSe using first-principles calculations. The lattice shrinkage effect present in the 2D structure is suppressed with increasing number of layers. Attributed to the strong interlayer coupling interactions, the band gap decreases from 2.30 to 0.83 eV with increased thickness. Particularly, the dispersion of the band edges on the high symmetry path changes considerably from the monolayer to bilayer PdSSe, resulting in shifts of the conduction band minimum and valence band maximum. The multilayer PdSSe shows band convergence feature with multi-valley for the conduction band, which are maintained with reduced effective mass. Furthermore, the increasing number of layers drives a wider absorption range in the visible light region, and the light absorption capability increases from ∼10% to ∼30%. Meanwhile, the band edge positions of the multilayer PdSSe are more appropriate for photocatalytic water splitting. Our theoretical study reveals the enhanced valley convergence, conductivity and optical absorption performance of the few-layer PdSSe, which suggests its promising application in thermoelectric conversion, solar harvesting and photocatalysis.
Collapse
Affiliation(s)
- Feng Xiao
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- School of Physics, Sun Yat-Sen University, Guangzhou, 510275, P. R. China
| | - Wen Lei
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, P. R. China
| | - Wei Wang
- School of Materials Science and Engineering, Beihang University, Beijing 100191, P. R. China
| | - Yiping Ma
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xujia Gong
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
| | - Xing Ming
- College of Science, Guilin University of Technology, Guilin 541004, P. R. China.
- MOE Key Laboratory of New Processing Technology for Nonferrous Metal and Materials, Key Laboratory of Low-dimensional Structural Physics and Application, Education Department of Guangxi Zhuang Autonomous Region, Guilin University of Technology, Guilin 541004, P. R. China
| |
Collapse
|
18
|
Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
Collapse
Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| |
Collapse
|
19
|
Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
Collapse
Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| |
Collapse
|
20
|
Lu H, Liu W, Wang H, Liu X, Zhang Y, Yang D, Pi X. Molecular beam epitaxy growth and scanning tunneling microscopy study of 2D layered materials on epitaxial graphene/silicon carbide. NANOTECHNOLOGY 2023; 34:132001. [PMID: 36563353 DOI: 10.1088/1361-6528/acae28] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Accepted: 12/23/2022] [Indexed: 06/17/2023]
Abstract
Since the advent of atomically flat graphene, two-dimensional (2D) layered materials have gained extensive interest due to their unique properties. The 2D layered materials prepared on epitaxial graphene/silicon carbide (EG/SiC) surface by molecular beam epitaxy (MBE) have high quality, which can be directly applied without further transfer to other substrates. Scanning tunneling microscopy and spectroscopy (STM/STS) with high spatial resolution and high-energy resolution are often used to study the morphologies and electronic structures of 2D layered materials. In this review, recent progress in the preparation of various 2D layered materials that are either monoelemental or transition metal dichalcogenides on EG/SiC surface by MBE and their STM/STS investigations are introduced.
Collapse
Affiliation(s)
- Hui Lu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Wenji Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Haolin Wang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
| | - Xiao Liu
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Yiqiang Zhang
- School of Materials Science and Engineering & College of Chemistry, Zhengzhou University, Zhengzhou, Henan 450001, People's Republic of China
| | - Deren Yang
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| | - Xiaodong Pi
- State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang 310027, People's Republic of China
- Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, Zhejiang 311200, People's Republic of China
| |
Collapse
|
21
|
Wang Z, Ali N, Ali F, Choi H, Shin H, Yoo WJ. Probing Intrinsic Defect-Induced Trap States and Hopping Transport in Two-Dimensional PdSe 2 Semiconductor Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:55787-55794. [PMID: 36474350 DOI: 10.1021/acsami.2c17821] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Palladium diselenide (PdSe2), as an emerging two-dimensional (2D) layered material, is gaining growing attention in nanoelectronics and optoelectronics due to its thickness-dependent band gap, high carrier mobility, and good air stability. However, its asymmetric pentagon structure is inclined to breed defects. Herein, the intrinsic Se vacancy-induced trap states and their influence on the hopping transport in PdSe2 are systematically investigated. We provide direct evidence that Se vacancies exist in the fresh PdSe2 samples, which results in the localized trapping states inside the band gap. For the few-layer PdSe2, at 77 K, the trap density (Dit) near the midgap is about 2.2 × 1013 cm-2 eV-1, whereas at 295 K, the Dit value increases to ∼7.1 × 1013 cm-2 eV-1. By comparison, the multilayer PdSe2 shows nonobvious temperature-dependent trap behaviors with almost unchanged Dit values of ∼8.1 × 1012 cm-2 eV-1 at midgap in the temperature range between 77 and 295 K. Thus, trap states in the few-layer PdSe2 are more vulnerable to temperature effect. Transport measurements demonstrated that both few-layer and multilayer PdSe2 field-effect transistor (FET) devices show n-type dominant ambipolar behaviors. The electron mobility in the multilayer PdSe2 FET is nearly 15-fold higher than that in the few-layer PdSe2 FET at 315 K, probably owing to the decreased effective mass and suppression of charge impurity scattering in the thicker channel material. However, both FET devices exhibit variable-range hopping over a temperature range from 77 to 240 K and thermally activated hopping at temperatures above 240 K. The hopping transport mechanism is strongly associated with the Se vacancy-induced localized states with poor screening and strong potential fluctuations. This study reveals the important role of structural defects in tailoring and improving the charge transport properties of PdSe2.
Collapse
Affiliation(s)
- Zhenping Wang
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Nasir Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Fida Ali
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hyungyu Choi
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Hoseong Shin
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| | - Won Jong Yoo
- Department of Nano Science and Technology, SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do16419, South Korea
| |
Collapse
|
22
|
Sharma SB, Qattan IA, Kc S, Alsaad AM. Large Negative Poisson's Ratio and Anisotropic Mechanics in New Penta-PBN Monolayer. ACS OMEGA 2022; 7:36235-36243. [PMID: 36278108 PMCID: PMC9583336 DOI: 10.1021/acsomega.2c03567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/07/2022] [Accepted: 09/26/2022] [Indexed: 06/16/2023]
Abstract
The scarce negative Poisson's ratio (NPR) in a two-dimensional (2D) material is an exceptional auxetic property that offers an opportunity to develop nanoscale futuristic multi-functional devices and has been drawing extensive research interest. Inspired by the buckled pentagonal iso-structures that often expose NPR, we employ state-of-the-art first-principles density functional theory calculations and analyses to predict a new 2D metallic ternary auxetic penta-phosphorus boron nitride (p-PBN) with a high value of NPR. The new p-PBN is stable structurally, mechanically, and dynamically and sustainable at room temperature, with experimental feasibility. The short and strong quasi sp3-hybridized B-N bond and unique bond variation and geometrical reconstruction with an applied strain allow p-PBN to inherit a high value of NPR (-0.236) along the (010) direction, the highest among any other ternary penta iso-structures reported to date. Despite having a small elastic strength, the highly asymmetric Young's modulus and Poisson's ratio along the (100) and (010) directions indicate large anisotropic mechanics, which are crucial for potential applications in nanomechanics and nanoauxetics.
Collapse
Affiliation(s)
- Shambhu Bhandari Sharma
- Department of Physics, Khalifa University of Science and Technology, P.O. Box 127788, Abu Dhabi127788, United Arab Emirates
| | - Issam A Qattan
- Department of Physics, Khalifa University of Science and Technology, P.O. Box 127788, Abu Dhabi127788, United Arab Emirates
| | - Santosh Kc
- Chemical and Materials Engineering, San Jose State University, San Jose, California95112, United States
| | - Ahmad M Alsaad
- Department of Physical Sciences, Jordan University of Science and Technology, P.O. Box 3030, Irbid22110, Jordan
| |
Collapse
|
23
|
Gu Y, Zhang L, Cai H, Liang L, Liu C, Hoffman A, Yu Y, Houston A, Puretzky AA, Duscher G, Rack PD, Rouleau CM, Meng X, Yoon M, Geohegan DB, Xiao K. Stabilized Synthesis of 2D Verbeekite: Monoclinic PdSe 2 Crystals with High Mobility and In-Plane Optical and Electrical Anisotropy. ACS NANO 2022; 16:13900-13910. [PMID: 35775975 DOI: 10.1021/acsnano.2c02711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
PdSe2 has a layered structure with an unusual, puckered Cairo pentagonal tiling. Its atomic bond configuration features planar 4-fold-coordinated Pd atoms and intralayer Se-Se bonds that enable polymorphic phases with distinct electronic and quantum properties, especially when atomically thin. PdSe2 is conventionally orthorhombic, and direct synthesis of its metastable polymorphic phases is still a challenge. Here, we report an ambient-pressure chemical vapor deposition approach to synthesize metastable monoclinic PdSe2. Monoclinic PdSe2 is shown to be synthesized selectively under Se-deficient conditions that induce Se vacancies. These defects are shown by first-principles density functional theory calculations to reduce the free energy of the metastable monoclinic phase, thereby stabilizing it during synthesis. The structure and composition of the monoclinic PdSe2 crystals are identified and characterized by scanning transmission electron microscopy imaging, convergent beam electron diffraction, and electron energy loss spectroscopy. Polarized Raman spectroscopy of the monoclinic PdSe2 flakes reveals their strong in-plane optical anisotropy. Electrical transport measurements show that the monoclinic PdSe2 exhibits n-type charge carrier conduction with electron mobilities up to ∼298 cm2 V-1 s-1 and a strong in-plane electron mobility anisotropy of ∼1.9. The defect-mediated growth pathway identified in this work is promising for phase-selective direct synthesis of other 2D transition metal dichalcogenides.
Collapse
Affiliation(s)
- Yiyi Gu
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Lizhi Zhang
- Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, United States
- Laboratory of Theoretical and Computational Nanoscience, National Center for Nanoscience and Technology of China, Beijing 100190, China
| | - Hui Cai
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Liangbo Liang
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Chenze Liu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Anna Hoffman
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Yiling Yu
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Austin Houston
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Alexander A Puretzky
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Gerd Duscher
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Philip D Rack
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Christopher M Rouleau
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Xiangmin Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Mina Yoon
- Materials Sciences and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - David B Geohegan
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Kai Xiao
- Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| |
Collapse
|
24
|
Wu J, Ma H, Zhong C, Wei M, Sun C, Ye Y, Xu Y, Tang B, Luo Y, Sun B, Jian J, Dai H, Lin H, Li L. Waveguide-Integrated PdSe 2 Photodetector over a Broad Infrared Wavelength Range. NANO LETTERS 2022; 22:6816-6824. [PMID: 35787028 DOI: 10.1021/acs.nanolett.2c02099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Hybrid integration of van der Waals materials on a photonic platform enables diverse exploration of novel active functions and significant improvement in device performance for next-generation integrated photonic circuits, but developing waveguide-integrated photodetectors based on conventionally investigated transition metal dichalcogenide materials at the full optical telecommunication bands and mid-infrared range is still a challenge. Here, we integrate PdSe2 with silicon waveguide for on-chip photodetection with a high responsivity from 1260 to 1565 nm, a low noise-equivalent power of 4.0 pW·Hz-0.5, a 3-dB bandwidth of 1.5 GHz, and a measured data rate of 2.5 Gbit·s-1. The achieved PdSe2 photodetectors provide new insights to explore the integration of novel van der Waals materials with integrated photonic platforms and exhibit great potential for diverse applications over a broad infrared range of wavelengths, such as on-chip sensing and spectroscopy.
Collapse
Affiliation(s)
- Jianghong Wu
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hui Ma
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chuyu Zhong
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Maoliang Wei
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Chunlei Sun
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yuting Ye
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Yan Xu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Bo Tang
- Institute of Microelectronics, Chinese Academic Society, Beijing 100029, China
| | - Ye Luo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Boshu Sun
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Jialing Jian
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hao Dai
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Hongtao Lin
- State Key Laboratory of Modern Optical Instrumentation, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- MOE Frontier Science Center for Brain Science & Brain-Machine Integration, Zhejiang University, Hangzhou 310027, China
| | - Lan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| |
Collapse
|
25
|
Park H, Jung GS, Ibrahim KM, Lu Y, Tai KL, Coupin M, Warner JH. Atomic-Scale Insights into the Lateral and Vertical Epitaxial Growth in Two-Dimensional Pd 2Se 3-MoS 2 Heterostructures. ACS NANO 2022; 16:10260-10272. [PMID: 35829720 DOI: 10.1021/acsnano.1c09019] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) materials form heterostructures in both the lateral and vertical directions when two different materials are interfaced, but with totally different bonding mechanisms of covalent in-plane to van der Waal's layered interactions. Understanding how the competition between lateral and vertical forces influences the epitaxial growth is important for future materials development of complex mixed layered heterostructures. Here, we use atomic-resolution annular dark-field scanning transmission electron microscopy to study the detailed atomic arrangements at mixed 2D heterostructure interfaces composed of two semiconductors with distinctly different crystal symmetry and elemental composition, Pd2Se3:MoS2, in order to understand the role of different chemical bonds on the resultant epitaxy. Pd2Se3 is grown off the step edge in bilayer MoS2, and the vertical and lateral epitaxial relationships of the Pd2Se3-MoS2 heterostructures are investigated. We find that the similarity of geometry at the interface with one metal (Pd or Mo) atoms bonded with two chalcogens (S or Se) are the crucial factors to make the atomically stitched lateral junction of 2D heterostructures. In addition, the vertical van der Waal interactions that are normally dominant in layered materials can be overcome by in-plane forces if the interfacial atomic stitching is high in quality and low in defect density. This knowledge should help guide the approaches for improving the epitaxy in mixed 2D heterostructures and seamless stitching of in-plane 2D heterostructures with various complex monolayer structures.
Collapse
Affiliation(s)
- Hyoju Park
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Gang Seob Jung
- Computational Sciences and Engineering Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States
| | - Khaled M Ibrahim
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Yang Lu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Kuo-Lun Tai
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Matthew Coupin
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Jamie H Warner
- Materials Science and Engineering Program and Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| |
Collapse
|
26
|
Shi Z, Zhang H, Khan K, Cao R, Zhang Y, Ma C, Tareen AK, Jiang Y, Jin M, Zhang H. Two-dimensional materials toward Terahertz optoelectronic device applications. JOURNAL OF PHOTOCHEMISTRY AND PHOTOBIOLOGY C: PHOTOCHEMISTRY REVIEWS 2022. [DOI: 10.1016/j.jphotochemrev.2021.100473] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/09/2023]
|
27
|
Bafekry A, Fadlallah MM, Faraji M, Hieu NN, Jappor HR, Stampfl C, Ang YS, Ghergherehchi M. Puckered Penta-like PdPX (X = O, S, Te) Semiconducting Nanosheets: First-Principles Study of the Mechanical, Electro-Optical, and Photocatalytic Properties. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21577-21584. [PMID: 35471020 DOI: 10.1021/acsami.1c23988] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
The atomic, electronic, optical, and mechanical properties of penta-like two-dimensional PdPX (X = O, S, Te) nanosheets have been systematically investigated using density functional theory calculations. All three PdPX nanosheets exhibit dynamic and mechanical stability on the basis of an analysis of phonon dispersions and the Born criteria, respectively. The PdPX monolayers are found to be brittle structures. Our calculations demonstrate that the PdPX nanosheets exhibit semiconducting characteristics with indirect band gaps of 0.93 (1.99), 1.34 (2.11), and 0.74 (1.51) eV for X = O, S, Te, respectively, using the PBE (HSE06) functional, where PdPTe is the best material for visible-light photocatalytic water splitting. Our findings give important basic characteristics of penta-like two-dimensional PdPX materials and should motivate further theoretical and experimental investigations of these interesting materials.
Collapse
Affiliation(s)
| | - Mohamed M Fadlallah
- Department of Physics, Faculty of Science, Benha University, 13518 Benha, Egypt
| | - Mehrdad Faraji
- Micro and Nanotechnology Graduate Program, TOBB University of Economics and Technology, Sogutozu Caddesi No 43 Sogutozu 06560, Ankara, Turkey
| | - Nguyen N Hieu
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Viet Nam
| | - Hamad R Jappor
- Department of Physics, College of Education for Pure Sciences, University of Babylon, Hilla 00000, Iraq
| | - Catherine Stampfl
- School of Physics, The University of Sydney, Camperdown, New South Wales 2006, Australia
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT) Cluster, Singapore University of Technology and Design, Singapore 487372
| | - Mitra Ghergherehchi
- Department of Electrical and Computer Engineering, Sungkyunkwan University, 16419 Suwon, South Korea
| |
Collapse
|
28
|
Huang W, Zhang Y, Song M, Wang B, Hou H, Hu X, Chen X, Zhai T. Encapsulation strategies on 2D materials for field effect transistors and photodetectors. CHINESE CHEM LETT 2022. [DOI: 10.1016/j.cclet.2021.08.086] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
|
29
|
Chen J, Zhou J, Xu W, Wen Y, Liu Y, Warner JH. Atomic-Level Dynamics of Point Vacancies and the Induced Stretched Defects in 2D Monolayer PtSe 2. NANO LETTERS 2022; 22:3289-3297. [PMID: 35389659 DOI: 10.1021/acs.nanolett.1c04275] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Monolayer PtSe2 holds great potential in extending 2D devices functionality, but their atomic-level-defect study is still limited. Here, we investigate the atomic structures of lattice imperfections from point to stretched 1D defects in 1T-PtSe2 monolayers, using annular dark-field scanning transmission electron microscopy (ADF-STEM). We show Se vacancies (VSe) have preferential sites with high beam-induced mobility. Diverse divacancies form with paired VSe. We found stretched linear defects triggered by dynamics of VSe that altered strain fields, distinct from the line vacancies in 2H-phase 2D materials. The paired VSe stability and formation possibility of vacancy lines are evaluated by density functional theory. Lower sputtering energy in PtSe2 than that in MoS2 can cause larger possibility of atomic loss compared to diffusion required for creating VSe lines. This provides atomic insights into the defects in 1T-PtSe2 and shows how a deviated 1D structure is embedded in a 2D system without losing atom lines.
Collapse
Affiliation(s)
- Jun Chen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Jiang Zhou
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technology, Ministry of Education, Dalian 116024, China
| | - Wenshuo Xu
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yi Wen
- Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom
| | - Yuanyue Liu
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
| | - Jamie H Warner
- Materials Graduate Program, Texas Materials Institute, The University of Texas at Austin, 204 East Dean Keeton Street, Austin, Texas 78712, United States
- Walker Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| |
Collapse
|
30
|
Wu D, Xu M, Zeng L, Shi Z, Tian Y, Li XJ, Shan CX, Jie J. In Situ Fabrication of PdSe 2/GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio. ACS NANO 2022; 16:5545-5555. [PMID: 35324154 DOI: 10.1021/acsnano.1c10181] [Citation(s) in RCA: 31] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe2), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe2/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe2 layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe2-based heterostructure for high-performance polarization-sensitive UV photodetection.
Collapse
Affiliation(s)
- Di Wu
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Mengmeng Xu
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Longhui Zeng
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China
| | - Zhifeng Shi
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Yongzhi Tian
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Xin Jian Li
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Chong-Xin Shan
- School of Physics and Microelectronics and Key Laboratory of Material Physics, Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China
| | - Jiansheng Jie
- Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa 999078, Macau SAR, China
- Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China
| |
Collapse
|
31
|
Ahmed T, Subrina S. Novel hybrid monolayers Si xGe ySn 1-x-y: first principles study of structural, electronic, optical, and electron transport properties with NH 3 sensing application. Phys Chem Chem Phys 2022; 24:9475-9491. [PMID: 35388812 DOI: 10.1039/d1cp05912b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The structural, electronic, optical, and electron transport properties of three different atomically thin novel hybrid monolayers comprising of Si, Ge, and Sn atoms in varying proportions are studied using first principles calculations within the framework of density functional theory. The fabrication of similar hybrid materials is practically realizable but the different properties of these novel monolayers are yet to be explored. The proposed hybrid buckled honeycomb monolayers with sp2-sp3 like orbital hybridization are mechanically and dynamically stable, confirmed by the analysis of in-plane elastic constants, phonon dispersion curve and cohesive energy of the monolayers. The electronic band structures of these hybrid two-dimensional (2D) monolayers, namely Ge0.25Sn0.25Si0.50, Si0.25Ge0.25Sn0.50, and Sn0.25Si0.25Ge0.50, show a considerable direct energy bandgap ranging from 120 meV to 283.8 meV while preserving the linear energy-momentum relation at the K point of the Brillouin zone. The calculated significantly low effective mass (0.063-0.101m0) and very high acoustic phonon limited mobility (∼106 cm2 V-1 s-1) of the charge carriers inside the hybrid monolayers ensure the presence of relativistic-massless Dirac fermions. In order to further investigate the electronic properties, we have calculated the atom projected density of states and differential charge density. Optical properties, e.g. dielectric function, electron loss function, absorption coefficient, refractive index, reflectivity, and optical conductivity, are also explored for parallelly and perpendicularly polarized incident light. These hybrid monolayers show anisotropic optical response for parallel and perpendicular polarization as a function of frequency of the incident light. Polarization tunable plasma frequency, high absorption coefficient over a wide range of frequency, and high refractive indices suggest these hybrid monolayers as potential candidates for optoelectronic applications. We have also designed three different armchair nanoribbons to study the effect of the adsorption of NH3 molecules on these hybrid nanoribbons. Our calculated electron transport properties ensure the applications of these nanoribbons as an NH3 sensor at the molecular level. Thus, our results suggest that the proposed SixGeySn1-x-y hybrid monolayers can be a potential candidate for nanoelectronics, optoelectronics and sensor based applications.
Collapse
Affiliation(s)
- Touhid Ahmed
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh.
| | - Samia Subrina
- Department of Electrical and Electronic Engineering, Bangladesh University of Engineering and Technology, Dhaka, 1205, Bangladesh.
| |
Collapse
|
32
|
Lei Z, Zhang X, Zhao Y, Wei A, Tao L, Yang Y, Zheng Z, Tao L, Yu P, Li J. Enhanced Raman scattering on two-dimensional palladium diselenide. NANOSCALE 2022; 14:4181-4187. [PMID: 35234226 DOI: 10.1039/d1nr07126b] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) semiconductors with atomic layers, and a flat and active surface provide an attractive platform for the study of surface-enhanced Raman scattering (SERS). Many 2D layered materials, including graphene and transition metal dichalcogenide (TMD), have been exploited as potential Raman enhancers for SERS-based molecule sensing. Herein, atomically-thin palladium diselenide (PdSe2) used as a SERS substrate for molecule detection was systematically studied. Stable Raman enhancement for molecules such as rhodamine 6G (R6G), crystal violet (CV), and rhodamine B (RhB) on few-layer PdSe2 has been verified. A detection limit as low as 10-9 M and an enhancement factor of 105 for the R6G molecule on monolayer PdSe2 are achieved. With the insertion of a thin Al2O3 layer, the Raman spectra confirm the predominant charge transfer mechanism for the large Raman enhancement. Furthermore, the strong thickness-dependent properties, good in-plane anisotropy and excellent air-stability of Raman enhancement are also explored for 2D PdSe2. Our findings provide not only a promising Raman enhancement platform for sensing applications but also new insights into the chemical mechanism (CM) process of SERS.
Collapse
Affiliation(s)
- Zehong Lei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Xinkuo Zhang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Yu Zhao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Aixiang Wei
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Lili Tao
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Yibin Yang
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Zhaoqiang Zheng
- Guangdong Provincial Key Laboratory of Information Photonics Technology, Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter, School of Material and Energy, Guangdong University of Technology, Guangzhou 510006, People's Republic of China.
| | - Li Tao
- Key Lab of Advanced Optoelectronic Quantum Architecture and Measurement (Ministry of Education), School of Physics, Beijing Institute of Technology, Beijing 100081, China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangzhou Key Laboratory of Flexible Electronic Materials and Wearable Devices, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510275, P.R. China
| | - Jingbo Li
- Guangdong Key Lab of Chip and Integration Technology, Institute of Semiconductors, South China Normal University, Guangzhou 510631, P.R. China
| |
Collapse
|
33
|
Ryu JH, Kim JG, Kim B, Kim K, Kim S, Park JH, Park BG, Kim Y, Ko KT, Lee K. Direct Observation of Orbital Driven Strong Interlayer Coupling in Puckered Two-Dimensional PdSe 2. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106053. [PMID: 35038218 DOI: 10.1002/smll.202106053] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2021] [Revised: 12/21/2021] [Indexed: 06/14/2023]
Abstract
Interlayer coupling between individual unit layers is known to be critical in manipulating the layer-dependent properties of two-dimensional (2D) materials. While recent studies have revealed that several 2D materials with significant degrees of interlayer interaction (such as black phosphorus) show strongly layer-dependent properties, the origin based on the electronic structure is drawing intensive attention along with 2D materials exploration. Here, the direct observation of a highly dispersive single electronic band along the interlayer direction in puckered 2D PdSe2 as an experimental hallmark of strong interlayer couplings is reported. Remarkably large band dispersion along the kz -direction near Fermi level, which is even wider than the in-plane one, is observed by the angle-resolved photoemission spectroscopy measurement. Employing X-ray absorption spectroscopy and density functional theory calculations, it is revealed that the strong interlayer coupling in 2D PdSe2 originates from the unique directional bonding of Pd d orbitals associated with unexpected Pd 4d9 configuration, which consequently plays a decisive role for the strong layer-dependency of the band gap.
Collapse
Affiliation(s)
- Jung Hyun Ryu
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Jeong-Gyu Kim
- Max Planck POSTECH/Hsinchu Center for Complex Phase Materials and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Bongjae Kim
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| | - Kyoo Kim
- Korea Atomic Energy Research Institute (KAERI), Daejeon, 34057, Republic of Korea
| | - Sooran Kim
- Department of Physics Education, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Jae-Hoon Park
- Max Planck POSTECH/Hsinchu Center for Complex Phase Materials and Department of Physics, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Byeong-Gyu Park
- Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Younghak Kim
- Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Kyung-Tae Ko
- Korea Basic Science Institute (KBSI), Daejeon, 34133, Republic of Korea
| | - Kimoon Lee
- Department of Physics, Kunsan National University, Gunsan, 54150, Republic of Korea
| |
Collapse
|
34
|
Dai M, Wang C, Ye M, Zhu S, Han S, Sun F, Chen W, Jin Y, Chua Y, Wang QJ. High-Performance, Polarization-Sensitive, Long-Wave Infrared Photodetection via Photothermoelectric Effect with Asymmetric van der Waals Contacts. ACS NANO 2022; 16:295-305. [PMID: 35014251 DOI: 10.1021/acsnano.1c06286] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Long-wavelength infrared (LWIR) photodetection is important for heat-seeking technologies, such as thermal imaging, all-weather surveillance, and missile guidance. Among various detection techniques, photothermoelectric (PTE) detectors are promising in that they can realize ultra-broadband photodetection at room temperature without an external power supply. However, their performance in terms of speed, responsivity, and noise level in the LWIR regime still needs further improvement. Here, we demonstrated a high-performance PTE photodetector based on low-symmetry palladium selenide (PdSe2) with asymmetric van der Waals contacts. The temperature gradient induced by asymmetric van der Waals contacts even under global illumination drives carrier diffusion to produce a photovoltage via the PTE effect. A responsivity of over 13 V/W, a response time of ∼50 μs, and a noise equivalent power of less than 7 nW/Hz1/2 are obtained in the 4.6-10.5 μm regime at room temperature. Furthermore, due to the anisotropic absorption of PdSe2, the detector exhibits a linear polarization angle sensitive response with an anisotropy ratio of 2.06 at 4.6 μm and 1.21 at 10.5 μm, respectively. Our proposed device architecture provides an alternative strategy to design high-performance photodetectors in the LWIR regime by utilizing van der Waals layered materials.
Collapse
Affiliation(s)
- Mingjin Dai
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Chongwu Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Ming Ye
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Zhu
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Song Han
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Fangyuan Sun
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Wenduo Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yuhao Jin
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yunda Chua
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qi Jie Wang
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Centre for Disruptive Photonic Technologies, Division of Physics and Applied Physics School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
| |
Collapse
|
35
|
Yang Z, Yang Q, Ren X, Tian Y, Zu Y, Li C, Din SZU, Leng J, Liu J. Passively mode-locked red Pr:LiYF 4 laser based on a two-dimensional palladium diselenide saturable absorber. OPTICS EXPRESS 2022; 30:2900-2908. [PMID: 35209421 DOI: 10.1364/oe.451007] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2021] [Accepted: 01/06/2022] [Indexed: 06/14/2023]
Abstract
We report a passively mode-locked Pr:LiYF4 (Pr:YLF) visible laser using a palladium diselenide (PdSe2) as a saturable absorber (SA) for the first time, to the best of our knowledge. The nonlinear optical properties of two-dimensional (2D) PdSe2 nanosheets in the visible band were studied by the open-aperture Z-scan technique. The results indicate the significant saturable absorption properties of PdSe2 nanosheets in the visible region. Furthermore, the continuous wave mode-locked (CWML) visible laser based on PdSe2 SA was successfully realized. Ultrashort pulses as short as 35 ps were obtained at 639.5 nm with a repetition rate of 80.3 MHz and a maximum output power of 116 mW. The corresponding pulse energy was 1.44 nJ and peak power was 41.3 W. These results indicate that 2D PdSe2 SA is a promising high stability passively mode-locked device for ultrafast solid-state visible lasers.
Collapse
|
36
|
Xu S, Wang Y, Li Y. Pentagonal PdX2 (X = S, Se) nanosheets with X vacancies as high-performance electrocatalysts for the hydrogen evolution reaction. Phys Chem Chem Phys 2022; 24:9930-9935. [DOI: 10.1039/d2cp00393g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Two-dimensional transition metal dichalcogenides (TMDs) have emerged as promising catalysts for the hydrogen evolution reaction (HER). However, they typically require the engineering of additional actives sites (e.g. vacancies and dopants)...
Collapse
|
37
|
Tang S, Bai S, Wu M, Luo D, zhang YJ, wen S, Yang S. Low-cost pentagonal NiX2 (X=S, Se, and Te) monolayers with strong anisotropy as potential thermoelectric materials. Phys Chem Chem Phys 2022; 24:5185-5198. [DOI: 10.1039/d1cp05671a] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Pentagonal compounds, as a new family of 2D materials, have recently been extensively studied in the fields of electrocatalysis, photovoltaics, and thermoelectrics. Encouraged by the successful synthesis of pentagonal PdSe2,...
Collapse
|
38
|
Dong Z, Yu W, Zhang L, Mu H, Xie L, Li J, Zhang Y, Huang L, He X, Wang L, Lin S, Zhang K. Highly Efficient, Ultrabroad PdSe 2 Phototransistors from Visible to Terahertz Driven by Mutiphysical Mechanism. ACS NANO 2021; 15:20403-20413. [PMID: 34780146 DOI: 10.1021/acsnano.1c08756] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The noble transition metal dichalcogenide palladium diselenide (PdSe2) is an ideal candidate material for broad-spectrum photodetection owing to the large bandgap tunability, high mobility, low thermal conductivity, and large Seebeck coefficient. In this study, self-powered ultrabroadband PdSe2 photodetectors from the visible-infrared to terahertz (THz) region driven by a mutiphysical mechanism are reported. In the visible-infrared region, the photogenerated electron-hole pairs in the PdSe2 body are quickly separated by the built-in electric field at the metal-semiconductor interface and achieve a photoresponsivity of 28 A·W-1 at 405 nm and 0.4 A·W-1 at 1850 nm. In the THz region, PdSe2 photodetectors display a room-temperature responsivity of 20 mA·W-1 at 0.10 THz and 5 mA·W-1 at 0.24 THz based on efficient production of hot carriers in an antenna-assisted structure. Owing to the fast response speed of ∼7.5 μs and low noise equivalent power of ∼900 pW·Hz-1/2, high-resolution transmission THz imaging is demonstrated under an ambient environment at room temperature. Our research validates the great potential of PdSe2 for broadband photodetection and provides a possibility for future optoelectronic applications.
Collapse
Affiliation(s)
- Zhuo Dong
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Wenzhi Yu
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Libo Zhang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Department of Optoelectronic Science and Engineering, Donghua University, Shanghai 201620, China
| | - Haoran Mu
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Liu Xie
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
- Yangtze Memory Technologies Co., Ltd., Wuhan 430074, China
| | - Jie Li
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Yan Zhang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Luyi Huang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| | - Xiaoyue He
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Lin Wang
- State Key Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Shenghuang Lin
- Songshan Lake Materials Laboratory, Dongguan 523000, China
| | - Kai Zhang
- CAS Key Laboratory of Nanophotonic Materials and Devices & Key Laboratory of Nanodevices and Applications, i-Lab, Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China
| |
Collapse
|
39
|
Ye C, Yang Z, Dong J, Huang Y, Song M, Sa B, Zheng J, Zhan H. Layer-Tunable Nonlinear Optical Characteristics and Photocarrier Dynamics of 2D PdSe 2 in Broadband Spectra. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103938. [PMID: 34677904 DOI: 10.1002/smll.202103938] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2021] [Revised: 08/30/2021] [Indexed: 06/13/2023]
Abstract
Layered 2D transition metal dichalcogenides (TMDCs) exhibited fascinating nonlinear optical (NLO) properties for constructing varied promising optoelectronics. However, exploring the desired 2D materials with both superior nonlinear absorption and ultrafast response in broadband spectra remain the key challenges to harvest their greatest potential. Here, based on synthesizing 2D PdSe2 films with the controlled layer number, the authors systematically demonstrated the broadband giant NLO performance and ultrafast excited carrier dynamics of this emerging material under femtosecond visible-to-near-infrared laser-pulse excitation (400-1550 nm). Layer-dependent and wavelength-dependent evolution of optical bandgap, nonlinear absorption, and photocarrier dynamics in the obtained 2D PdSe2 are clearly revealed. Specially, the transition from semiconducting to semimetallic PdSe2 induced dramatic changes of their interband absorption-relaxation process. This work makes 2D PdSe2 more competitive for future ultrafast photonics and also opens up a new avenue for the optical performance optimization of various 2D materials by rational design of these materials.
Collapse
Affiliation(s)
- Chenyu Ye
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Zhenqi Yang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Junhao Dong
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Yongfeng Huang
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Miaomiao Song
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Baisheng Sa
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Jingying Zheng
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| | - Hongbing Zhan
- College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
| |
Collapse
|
40
|
Wang H, Chang J, Huang Y, Lei Z, Du W, Zhou Y, E Y, Xu X. Large In-Plane Anisotropic Terahertz Emission Induced by Asymmetric Polarization in Low-Symmetric PdSe 2. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54543-54550. [PMID: 34734685 DOI: 10.1021/acsami.1c16197] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Palladium diselenide (PdSe2) exhibits air stability, low symmetry, and high carrier mobility, resulting in unique in-plane anisotropy for polarized optoelectronic devices. However, the relationship of the symmetry and the terahertz (THz) radiation remains elusive yet significant for both the THz source in technology and nonlinear optical physics in science. Herein, we observed large in-plane anisotropic THz radiation from multilayer PdSe2 under femtosecond laser excitation. The THz emission demonstrates 2α dependence on the optical polarization angle from the resonant optical rectification combined with a background from the photocarrier acceleration under the surface depletion field. Interestingly, the in-plane THz emission along and perpendicular to the puckered direction demonstrates large anisotropy. Furthermore, the THz time-domain signals exhibit reversed polarities along the positive and negative puckered directions. This asymmetric polarization could relate to the bonding of Pd-Se, resulting in the unidirectional photon-induced current. Our results bridge the gap between the low-symmetry two-dimensional materials and the THz technology, which could promote the development of THz-polarized devices based on low-symmetry layered materials.
Collapse
Affiliation(s)
- He Wang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Jiawei Chang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yuanyuan Huang
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Zhen Lei
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Wanyi Du
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yixuan Zhou
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| | - Yiwen E
- The Institute of Optics, University of Rochester, Rochester, New York 14627, United States
| | - Xinlong Xu
- Shaanxi Joint Lab of Graphene, State Key Laboratory of Photon-Technology in Western China Energy, International Collaborative Center on Photoelectric Technology and Nano Functional Materials, Institute of Photonics & Photon-Technology, Northwest University, Xi'an 710127, China
| |
Collapse
|
41
|
Shan Y, Yin Z, Zhang Y, Pan C, Deng H, Dai N. Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS 2 Homojunction. ACS APPLIED MATERIALS & INTERFACES 2021; 13:54194-54203. [PMID: 34727691 DOI: 10.1021/acsami.1c16891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional transition metal dichalcogenide-based phototransistors have been intensively studied in recent years due to their high detection rate and flexibility. However, the photogating effect, usually appearing in the devices, leads to a poor transient photoresponse, which slows down the imaging rate of the camera based on the devices. Here, we demonstrate a dual-channel two-dimensional field-effect phototransistor composed of a vertical molybdenum disulfide (MoS2) p-n homojunction as the sensitizing channel layer. Owing to the effective separation by the vertical built-in electric field and rapid migration of photoexcited electrons and holes in the separated channels, the fabricated dual-channel FET device simultaneously exhibits prominent responsivity and greatly improved time response in comparison to the pristine MoS2 FET detectors. Excellent device performance has been achieved, with a responsivity of 3.4 × 104 A/W at a source-drain voltage (VDS) of 1 V, corresponding to a detectivity (D*) of 1.9 × 1013 Jones@532 nm and a gain of more than 105 electrons per photon, an external quantum efficiency of 9.6%, and a response time of tens of milliseconds. Especially, the response time of the dual-channel FET device is 3 orders of magnitude faster than that of the pristine device. Our results provide a new way to overcome the inherent photogating drawback of two-dimensional FET optoelectronic devices and to develop a related high frame rate imaging system.
Collapse
Affiliation(s)
- Yufeng Shan
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
| | - Ziwei Yin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
| | - Yi Zhang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
| | - Changyi Pan
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
| | - Huiyong Deng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
- Zhejiang Lab, Hangzhou 311100, P. R. China
| | - Ning Dai
- Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, P. R. China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, P. R. China
- University of Chinese Academy of Sciences, Beijing 100864, China
- Zhejiang Lab, Hangzhou 311100, P. R. China
| |
Collapse
|
42
|
Huo CF, Wen R, Yan XQ, Li DK, Huang KX, Zhu Y, Cui Q, Xu C, Liu ZB, Tian JG. Thickness-dependent ultrafast charge-carrier dynamics and coherent acoustic phonon oscillations in mechanically exfoliated PdSe 2 flakes. Phys Chem Chem Phys 2021; 23:20666-20674. [PMID: 34515274 DOI: 10.1039/d1cp03202j] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Recently, palladium diselenide (PdSe2) has emerged as a promising material with potential applications in electronic and optoelectronic devices due to its intriguing electronic and optical properties. The performance of the device is strongly dependent on the charge-carrier dynamics and the related hot phonon behavior. Here, we investigate the photoexcited-carrier dynamics and coherent acoustic phonon (CAP) oscillations in mechanically exfoliated PdSe2 flakes with a thickness ranging from 10.6 nm to 54 nm using time-resolved non-degenerate pump-probe transient reflection (TR) spectroscopy. The results imply that the CAP frequency is thickness-dependent. Polarization-resolved transient reflection (PRTR) measurements reveal the isotropic charge-carrier relaxation dynamics and the CAP frequency in the 10.6 nm region. In addition, the deformation potential (DP) mechanism dominates the generation of the CAP. Moreover, a sound velocity of 6.78 × 103 m s-1 is extracted from the variation of the oscillation period with the flake thickness and the delay time of the acoustic echo. These results provide insight into the ultrafast optical coherent acoustic phonon and optoelectronic properties of PdSe2 and may open new possibilities for PdSe2 applications in THz-frequency mechanical resonators.
Collapse
Affiliation(s)
- Chang-Fu Huo
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China.
| | - Rui Wen
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China.
| | - Xiao-Qing Yan
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China.
| | - De-Kang Li
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China.
| | - Kai-Xuan Huang
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China.
| | - Yizhi Zhu
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
| | - Qiannan Cui
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
| | - Chunxiang Xu
- State Key Laboratory of Bioelectronics, School of Biological Science and Medical Engineering, Southeast University, Nanjing 210096, China
| | - Zhi-Bo Liu
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China. .,Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China.,The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| | - Jian-Guo Tian
- The Key Laboratory of Weak Light Nonlinear Photonics, Ministry of Education, School of Physics and Teda Applied Physics Institute, Nankai University, Tianjin 300071, China. .,Renewable Energy Conversion and Storage Center, Nankai University, Tianjin 300071, China.,The collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi 030006, China
| |
Collapse
|
43
|
Seo JE, Das T, Park E, Seo D, Kwak JY, Chang J. Polarity Control and Weak Fermi-Level Pinning in PdSe 2 Transistors. ACS APPLIED MATERIALS & INTERFACES 2021; 13:43480-43488. [PMID: 34460224 DOI: 10.1021/acsami.1c08028] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional (2D) materials have been considered key materials for the future logic devices due to the excellent electrostatic integrity originating from their ultrathin nature. However, the carrier polarity control of 2D material field-effect transistors (FETs) still remains a challenging issue, hindering the realization of complementary logic function in the 2D material platform. Here, we report a comprehensive study on the electrical characteristics of PdSe2 FETs with different metal contacts. It is found that the carrier polarity in PdSe2 FETs can be modulated simply by changing the metal contact due to the weak Fermi-level pinning in PdSe2. We demonstrate a complementary metal-oxide-semiconductor (CMOS) inverter using the same channel material PdSe2 for n- and p-MOSFETs but with different metal contacts, suggesting the possible realization of PdSe2-based CMOS logic circuits.
Collapse
Affiliation(s)
- Jae Eun Seo
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Tanmoy Das
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| | - Eunpyo Park
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
| | - Dongwook Seo
- Department of Electrical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, South Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology (KIST), Seoul 02792, South Korea
| | - Jiwon Chang
- Department of System Semiconductor Engineering, Yonsei University, Seoul 03722, South Korea
- Department of Materials Science and Engineering, Yonsei University, Seoul 03722, South Korea
| |
Collapse
|
44
|
Li P, Zhang J, Zhu C, Shen W, Hu C, Fu W, Yan L, Zhou L, Zheng L, Lei H, Liu Z, Zhao W, Gao P, Yu P, Yang G. Penta-PdPSe: A New 2D Pentagonal Material with Highly In-Plane Optical, Electronic, and Optoelectronic Anisotropy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102541. [PMID: 34302398 DOI: 10.1002/adma.202102541] [Citation(s) in RCA: 26] [Impact Index Per Article: 8.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2021] [Revised: 04/28/2021] [Indexed: 06/13/2023]
Abstract
Due to their low-symmetry lattice characteristics and intrinsic in-plane anisotropy, 2D pentagonal materials, a new class of 2D materials composed entirely of pentagonal atomic rings, are attracting increasing research attention. However, the existence of these 2D materials has not been proven experimentally until the recent discovery of PdSe2 . Herein, penta-PdPSe, a new 2D pentagonal material with a novel low-symmetry puckered pentagonal structure, is introduced to the 2D family. Interestingly, a peculiar polyanion of [SePPSe]4- is discovered in this material, which is the biggest polyanion in 2D materials yet discovered. Strong intrinsic in-plane anisotropic behavior endows penta-PdPSe with highly anisotropic optical, electronic, and optoelectronic properties. Impressively, few-layer penta-PdPSe-based phototransistor not only achieves excellent electronic performances, a moderate electron mobility of 21.37 cm2 V-1 s-1 and a high on/off ratio of up to 108 , but it also has a high photoresponsivity of ≈5.07 × 103 A W-1 at 635 nm, which is ascribed to the photogating effect. More importantly, penta-PdPSe also exhibits a large anisotropic conductance (σmax /σmax = 3.85) and responsivity (Rmax /Rmin = 6.17 at 808 nm), superior to most 2D anisotropic materials. These findings make penta-PdPSe an ideal material for the design of next-generation anisotropic devices.
Collapse
Affiliation(s)
- Peiyang Li
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Jiantian Zhang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Chao Zhu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin, 300072, P. R. China
| | - Wei Fu
- Centre of Advanced 2D Materials, National University of Singapore, 1 Science Drive 3, Singapore, 117550, Singapore
| | - Luo Yan
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Liujiang Zhou
- Institute of Fundamental and Frontier Sciences, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Chengdu, 610054, P. R. China
| | - Lu Zheng
- Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE), Northwestern Polytechnical University, 127 West Youyi Road, Xi'an, 710072, P. R. China
| | - Hongxiang Lei
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Weina Zhao
- Guangdong Key Laboratory of Environmental Catalysis and Health Risk Control, Institute of Environmental Health and Pollution Control, School of Environmental Science and Engineering, Guangdong University of Technology, Guangzhou, 510006, P. R. China
| | - Pingqi Gao
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Peng Yu
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, School of Materials, Sun Yat-sen University, Guangzhou, 510275, P. R. China
| |
Collapse
|
45
|
Li Z, Li D, Wang H, Chen P, Pi L, Zhou X, Zhai T. Intercalation Strategy in 2D Materials for Electronics and Optoelectronics. SMALL METHODS 2021; 5:e2100567. [PMID: 34928056 DOI: 10.1002/smtd.202100567] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2021] [Revised: 07/24/2021] [Indexed: 05/21/2023]
Abstract
Intercalation is an effective approach to tune the physical and chemical properties of 2D materials due to their abundant van der Waals gaps that can host high-density intercalated guest matters. This approach has been widely employed to modulate the optical, electrical, and photoelectrical properties of 2D materials for their applications in electronic and optoelectronic devices. Thus it is necessary to review the recent progress of the intercalation strategy in 2D materials and their applications in devices. Herein, various intercalation strategies and the novel properties of the intercalated 2D materials as well as their applications in electronics and optoelectronics are summarized. In the end, the development tendency of this promising approach for 2D materials is also outlined.
Collapse
Affiliation(s)
- Zexin Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Dongyan Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Haoyun Wang
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Ping Chen
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Lejing Pi
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| | - Xing Zhou
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
- State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, P. R. China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, P. R. China
| |
Collapse
|
46
|
Wang Y, Pang J, Cheng Q, Han L, Li Y, Meng X, Ibarlucea B, Zhao H, Yang F, Liu H, Liu H, Zhou W, Wang X, Rummeli MH, Zhang Y, Cuniberti G. Applications of 2D-Layered Palladium Diselenide and Its van der Waals Heterostructures in Electronics and Optoelectronics. NANO-MICRO LETTERS 2021; 13:143. [PMID: 34138389 PMCID: PMC8203759 DOI: 10.1007/s40820-021-00660-0] [Citation(s) in RCA: 19] [Impact Index Per Article: 6.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 05/11/2021] [Indexed: 05/07/2023]
Abstract
The rapid development of two-dimensional (2D) transition-metal dichalcogenides has been possible owing to their special structures and remarkable properties. In particular, palladium diselenide (PdSe2) with a novel pentagonal structure and unique physical characteristics have recently attracted extensive research interest. Consequently, tremendous research progress has been achieved regarding the physics, chemistry, and electronics of PdSe2. Accordingly, in this review, we recapitulate and summarize the most recent research on PdSe2, including its structure, properties, synthesis, and applications. First, a mechanical exfoliation method to obtain PdSe2 nanosheets is introduced, and large-area synthesis strategies are explained with respect to chemical vapor deposition and metal selenization. Next, the electronic and optoelectronic properties of PdSe2 and related heterostructures, such as field-effect transistors, photodetectors, sensors, and thermoelectric devices, are discussed. Subsequently, the integration of systems into infrared image sensors on the basis of PdSe2 van der Waals heterostructures is explored. Finally, future opportunities are highlighted to serve as a general guide for physicists, chemists, materials scientists, and engineers. Therefore, this comprehensive review may shed light on the research conducted by the 2D material community.
Collapse
Affiliation(s)
- Yanhao Wang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Jinbo Pang
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
| | - Qilin Cheng
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Lin Han
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Yufen Li
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xue Meng
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China
| | - Bergoi Ibarlucea
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| | - Hongbin Zhao
- State Key Laboratory of Advanced Materials for Smart Sensing, GRINM Group Co. Ltd., Xinwai Street 2, Beijing, 100088, People's Republic of China
| | - Feng Yang
- Department of Chemistry, Guangdong Provincial Key Laboratory of Catalytic Chemistry, Southern University of Science and Technology, Shenzhen, Guangdong, 518055, People's Republic of China
| | - Haiyun Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Hong Liu
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China.
- State Key Laboratory of Crystal Materials, Center of Bio and Micro/Nano Functional Materials, Shandong University, 27 Shandanan Road, Jinan, 250100, People's Republic of China.
| | - Weijia Zhou
- Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong, Institute for Advanced Interdisciplinary Research (iAIR), University of Jinan, Shandong, Jinan, 250022, People's Republic of China
| | - Xiao Wang
- Shenzhen Institutes of Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences, 1068 Xueyuan Avenue, Shenzhen University Town, Shenzhen, 518055, People's Republic of China
| | - Mark H Rummeli
- College of Energy Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, 215006, People's Republic of China
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, People's Republic of China
- Centre of Polymer and Carbon Materials, Polish Academy of Sciences, M. Curie Sklodowskiej 34, 41-819, Zabrze, Poland
- Institute for Complex Materials, IFW Dresden 20 Helmholtz Strasse, 01069, Dresden, Germany
- Institute of Environmental Technology VŠB-Technical University of Ostrava, 17. listopadu 15, Ostrava, 708 33, Czech Republic
| | - Yu Zhang
- Institute of Marine Science and Technology, Shandong University, Qingdao, 266237, People's Republic of China.
| | - Gianaurelio Cuniberti
- Institute for Materials Science and Max Bergmann Center of Biomaterials, Technische Universität Dresden, 01069, Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, 01069, Dresden, Germany
- Dresden Center for Computational Materials Science, Technische Universität Dresden, 01062, Dresden, Germany
- Dresden Center for Intelligent Materials (GCL DCIM), Technische Universität Dresden, 01062, Dresden, Germany
| |
Collapse
|
47
|
Afzal AM, Iqbal MZ, Dastgeer G, Ahmad AU, Park B. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003713. [PMID: 34105276 PMCID: PMC8188193 DOI: 10.1002/advs.202003713] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Revised: 02/10/2021] [Indexed: 05/11/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe2 ) and palladium diselenide (PdSe2 ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3 × 105 is obtained, stemming from the sharp interface and low Schottky barriers of the MoTe2 /PdSe2 vdWHs. It is also successfully demonstrated that the vdWH FET exhibits highly sensitive photo-detecting abilities, such as noticeably high photoresponsivity (1.24 × 105 A W-1 ), specific detectivity (2.42 × 1014 Jones), and good external quantum efficiency (3.5 × 106 ), not only due to the intra-TMD band-to-band transition but also due to the inter-TMD charge transfer (CT) transition. Further, rapid rise (16.1 µs) and decay (31.1 µs) times are obtained under incident light with a wavelength of 2000 nm due to the CT transition, representing an outcome one order of magnitude faster than values currently in the literature. Such TMD-based vdWH FETs would improve the photo-gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
Collapse
Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering SciencesGIK Institute of Engineering Sciences and TechnologyTopiKhyber Pakhtunkhwa23640Pakistan
| | - Ghulam Dastgeer
- School of PhysicsPeking UniversityBeijing100871China
- IBS Center for Integrated Nanostructure PhysicsSungkyunkwan UniversitySuwon16419South Korea
| | - Aqrab ul Ahmad
- School of Physics and School of MicroelectronicsDalian University of TechnologyDalian116000China
| | - Byoungchoo Park
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
| |
Collapse
|
48
|
Yang H, Xiao Y, Zhang K, Chen Z, Pan J, Zhuo L, Zhong Y, Zheng H, Zhu W, Yu J, Chen Z. Self-powered and high-performance all-fiber integrated photodetector based on graphene/palladium diselenide heterostructures. OPTICS EXPRESS 2021; 29:15631-15640. [PMID: 33985260 DOI: 10.1364/oe.425777] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/22/2021] [Accepted: 04/25/2021] [Indexed: 06/12/2023]
Abstract
An all-fiber integrated photodetector is proposed and demonstrated by assembling a graphene/palladium diselenide (PdSe2) Van der Waals heterostructure onto the endface of a standard optical fiber. A gold film is covered on the heterostructure working as an electrode and a mirror, which reflects back the unabsorbed residual light for further reusage. Owing to the low bandgap of PdSe2, the all-fiber photodetector shows a broadband photoresponse from 650 to 1550 nm with a high photoresponsivity of 6.68×104 AW-1, enabling a low light detection of 42.5 pW. And the fastest temporal response is about 660 µs. Taking advantage of heterostructures, the photodetector can work in self-powered mode with the on/off ratio about 82. These findings provide new strategies for integrating two-dimensional materials into optical fibers to realize integrated all-fiber devices with multi-function applications.
Collapse
|
49
|
Cheng PK, Tang CY, Ahmed S, Qiao J, Zeng LH, Tsang YH. Utilization of group 10 2D TMDs-PdSe 2 as a nonlinear optical material for obtaining switchable laser pulse generation modes. NANOTECHNOLOGY 2021; 32:055201. [PMID: 33059334 DOI: 10.1088/1361-6528/abc1a2] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
In-plane anisotropic two-dimensional (2D) materials have gained considerable interest in the field of research, due to having the potential of being used in different device applications. Recently, among these 2D materials, group 10 transition metal dichalcogenides (TMDs) pentagonal Palladium diselenide (PdSe2) is utilized in various sections of researches like nanoelectronics, thermoelectric, spintronics, optoelectronics, and ultrafast photonics, owing to its high air stability and broad absorption spectrum properties. In this paper, it is demonstrated that by utilizing this novel 2D layered PdSe2 material as a saturable absorber (SA) in an EDF laser system, it is possible to obtain switchable laser pulse generation modes. At first, the Q-switching operation mode is attained at a threshold pump power of 56.8 mW at 1564 nm, where the modulation range of pulse duration and repetition rate is 18.5 μs-2.0 μs and 16.4 kHz-57.0 kHz, respectively. Afterward, the laser pulse generation mode is switched to the mode-locked state at a pump power of 63.1 mW (threshold value) by changing the polarization condition inside the laser cavity, and this phenomenon persists until the maximum pump power of 230.4 mW. For this mode-locking operation, the achieved pulse duration is 766 fs, corresponding to the central wavelength and 3 dB bandwidth of 1566 nm and 4.16 nm, respectively. Finally, it is illustrated that PdSe2 exhibits a modulation depth of 7.01%, which substantiates the high nonlinearity of the material. To the best of the authors' knowledge, this is the first time of switchable modes for laser pulse generation are achieved by using this PdSe2 SA. Therefore, this work will encourage the research community to carry out further studies with this PdSe2 material in the future.
Collapse
Affiliation(s)
- Ping Kwong Cheng
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Chun Yin Tang
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Safayet Ahmed
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Junpeng Qiao
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Long-Hui Zeng
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| | - Yuen Hong Tsang
- Shenzhen Research Institute, The Hong Kong Polytechnic University, 518057 Shenzhen, Guangdong, People's Republic of China
- Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, People's Republic of China
| |
Collapse
|
50
|
Jakhar M, Kumar A. Tunable photocatalytic water splitting and solar-to-hydrogen efficiency in β-PdSe 2 monolayer. Catal Sci Technol 2021. [DOI: 10.1039/d1cy00953b] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/28/2022]
Abstract
Direct production of hydrogen from photocatalytic water splitting is a potential solution to overcome global energy crisis.
Collapse
Affiliation(s)
- Mukesh Jakhar
- Department of Physics, School of Basic Sciences, Central University of Punjab, Bathinda, 151401, India
| | - Ashok Kumar
- Department of Physics, School of Basic Sciences, Central University of Punjab, Bathinda, 151401, India
| |
Collapse
|