Endeavor of Iontronics: From Fundamentals to Applications of Ion-Controlled Electronics

Low-voltage flexible organic transistors utilizing passivated polyelectrolyte dielectrics for tactile sensing and braille recognition

Organic field-effect transistors (OFETs) utilizing polyelectrolyte dielectrics offer low-power operation and good signal amplification, making them well suited to pressure sensor applications. However, pristine polyelectrolyte dielectrics suffer from high leakage currents and instability under device operation. Here, we develop novel passivated polyelectrolyte dielectrics to enhance electrical performance of low-voltage flexible OFETs, achieving the reduced hysteresis and the significantly improved mobility from 0.04 to 1.17 cm2 V-1 s-1. The optimized OFETs with passivated polyelectrolyte dielectrics are integrated as flexible pressure sensors, affording high sensitivity (297.2 kPa-1) at -2 V, wide response range (0-70.1 kPa), and fast response in milliseconds. Inspired by human skin, the OFET pressure sensor successfully simulates biological synaptic behaviors, including excitatory postsynaptic currents, paired-pulse facilitation, and the transition from short-term memory to long-term memory, which are crucial for processing complex signals. Furthermore, intelligent touch recognition of braille characters with an accuracy of ∼98% is achieved by designing the low-voltage OFET pressure sensor array and combining it with algorithms. These results provide new insights into advanced dielectrics and low-power OFET sensors for potential applications in skin-like artificial synapses, and human-machine interaction systems.

Nanostructured h-WO3-Based Ionologic Gates with Enhanced Rectification and Transistor Functionality

Iontronic devices link ion-based transport with established electronic systems. Emerging capacitive devices, such as CAPode and G-Cap, feature diode-like rectification and transistor-like switching, respectively, through electrochemical capacitor functionality for enhanced energy storage and signal processing in next-generation low-power electronics. In this study, we present an asymmetric architecture based on nanostructured hexagonal tungsten oxide with significantly enhanced current rectification (with a rectification ratio of 58), providing a performant ionic transistor with 97.5% switching efficiency under only a 1 V bias. Key parameters, such as substrate materials, the mass ratio of the counter electrode to the working electrode, electrolyte composition, and concentration, are evaluated to reach the highest rectification ratios. The final device exhibited remarkable stability, maintaining performance for over 20,000 cycles without degradation. Additionally, integrating a third electrode into the optimized CAPode (termed G-Cap) allowed it to function as a transistor analogue, showing excellent switchability. The third gate electrode in the G-Cap plays a critical role in shifting the working electrode potential to reach the redox potential of tungsten oxide, enhancing the device functionality. As a proof of concept, the CAPodes were integrated into basic and complex logic gates under varying voltages and frequencies up to 1000 mHz, with output signals demonstrating robust performance. In addition, the logic operation metrics revealed a low threshold voltage of 0.4 V and a low power consumption of 2 μW. These results highlight the potential for expanded applications of this device structure.

Flexible iontronic sensing

The emerging flexible iontronic sensing (FITS) technology has introduced a novel modality for tactile perception, mimicking the topological structure of human skin while providing a viable strategy for seamless integration with biological systems. With research progress, FITS has evolved from focusing on performance optimization and structural enhancement to a new phase of integration and intelligence, positioning it as a promising candidate for next-generation wearable devices. Therefore, a review from the perspective of technological development trends is essential to fully understand the current state and future potential of FITS devices. In this review, we examine the latest advancements in FITS. We begin by examining the sensing mechanisms of FITS, summarizing research progress in material selection, structural design, and the fabrication of active and electrode layers, while also analysing the challenges and bottlenecks faced by different segments in this field. Next, integrated systems based on FITS devices are reviewed, highlighting their applications in human-machine interaction, healthcare, and environmental monitoring. Additionally, the integration of artificial intelligence into FITS is explored, focusing on optimizing front-end device design and improving the processing and utilization of back-end data. Finally, building on existing research, future challenges for FITS devices are identified and potential solutions are proposed.

High Metal-Insulator Topotactic Cycling Endurance in Electrochemically Gated La0.5Sr0.5CoO3-δ Probed by Humidity-Dependent Operando Fourier Transform Infrared Spectroscopy

Electrochemical gating of perovskite La0.5Sr0.5CoO3-δ (LSCO) films yields large room-temperature, low-power, nonvolatile, complex refractive index changes across a metal-insulator transition. However, the underlying topotactic perovskite to brownmillerite phase transformation has demonstrated limited cycling endurance, and the role of H2O in this electrochemical cycling is not well established. Here, we explore extended cycling endurance in ion-gel-gate LSCO electrochemical transistors through relative-humidity-dependent operando FTIR transmittance measurements, enabling correlation of the metal-insulator optical changes in LSCO to corresponding electrochemical features. We show that higher-humidity gating significantly lowers the threshold voltage for oxygen reinsertion into LSCO and thus improves optical property reversibility, but concurrently induces LSCO etching and Pt contact dewetting that limit prolonged cycling. With informed selection of a 15% relative humidity environment and Au device contacts, we then demonstrate sustained cycling of LSCO films between distinct metallic and insulating optical states for over 40 cycles, with sustained but dampened optical modulation to 100 cycles. These findings set a metal-insulator optical property endurance record for an electrochemically gated perovskite oxide undergoing a topotactic perovskite ↔ brownmillerite phase change, further motivate the use of ion-gel-gated LSCO films for tunable infrared photonic applications such as thermal camouflage and thermoregulation, and establish useful guiding principles to enhance cycling endurance in electrochemically tunable functional oxides.

Ion-Electron Interactions in 2D Nanomaterials-Based Artificial Synapses for Neuromorphic Applications

With the increasing limitations of conventional computing techniques, particularly the von Neumann bottleneck, the brain's seamless integration of memory and processing through synapses offers a valuable model for technological innovation. Inspired by biological synapse facilitating adaptive, low-power computation by modulating signal transmission via ionic conduction, iontronic synaptic devices have emerged as one of the most promising candidates for neuromorphic computing. Meanwhile, the atomic-scale thickness and tunable electronic properties of van der Waals two-dimensional (2D) materials enable the possibility of designing highly integrated, energy-efficient devices that closely replicate synaptic plasticity. This review comprehensively analyzes advancements in iontronic synaptic devices based on 2D materials, focusing on electron-ion interactions in both iontronic transistors and memristors. The challenges of material stability, scalability, and device integration are evaluated, along with potential solutions and future research directions. By highlighting these developments, this review offers insights into the potential of 2D materials in advancing neuromorphic systems.

Carbon-based iontronics - current state and future perspectives

Over the past few decades, carbon materials, including fullerenes, carbon nanotubes, graphene, and porous carbons, have achieved tremendous success in the fields of energy, environment, medicine, and beyond, through their development and application. Due to their unique physical and chemical characteristics for enabling simultaneous interaction with ions and transport of electrons, carbon materials have been attracting increasing attention in the emerging field of iontronics in recent years. In this review, we first summarize the recent progress and achievements of carbon-based iontronics (ionic sensors, ionic transistors, ionic diodes, ionic pumps, and ionic actuators) for multiple bioinspired applications ranging from information sensing, processing, and actuation, to simple and basic artificial intelligent reflex arc units for the construction of smart and autonomous iontronics. Additionally, the promising potential of carbon materials for smart iontronics is highlighted and prospects are provided in this review, which provide new insights for the further development of nanostructured carbon materials and carbon-based smart iontronics.

Enhanced Backgate Tunability on Interfacial Carrier Concentration in Ionic Liquid-Gated MoS2 Devices

The periodic spatial modulation potential arising from the zig-zag distribution of ions at large gate voltage in an ionic liquid-gated device may enable functionalities in a similar way as nanopatterning and moiré engineering. However, the inherent coupling between periodic modulation potential and carrier concentration in ionic liquid devices has hindered further exploration. Here, the feasibility of decoupling manipulation on periodic modulation potential and carrier density in an ionic liquid device is demonstrated by using a conventional backgate. The backgate is found to have a tunability on carrier concentration comparable to that of ionic gating, especially at large ionic liquid gate voltage, by activating the bulk channels mediated back tunneling between the trapped bands and interfacial channel.

Evolution of electronic correlation in highly doped organic two-dimensional hole gas

Strong electron correlation is the essential mediator that creates various exotic phases in two-dimensional electronic systems which has been continuously intriguing in modern condensed-matter physics. Such electronic states as Mott insulators, charge orders, and high-temperature superconductivity would be simply Fermi-degenerated metals unless the strong correlation plays essential roles. However, how it emerges, particularly to overcome screening effects upon doping band insulators, has not been experimentally studied. In this study, we report evolution of a strongly correlated electron system from a band-insulating organic semiconductor. Carriers are continuously doped via electric double layers up to a density of 1014 cm-2. Notably, significant deviations from a simple metallic system are observed even at far from half-filled band, possibly due to charge-order instability. The findings reveal that off-site Coulomb energy can compete with Thomas-Fermi screening. This competition enables the emergence of strongly correlated exotic phases, even in systems distant from Mott insulators.

Nanofluidic Memristive Transition and Synaptic Emulation in Atomically Thin Pores

Ionic transport across nanochannels is the basis of communications in living organisms, enlightening neuromorphic nanofluidic iontronics. Comparing to the angstrom-scale long biological ionic pathways, it remains a great challenge to achieve nanofluidic memristors at such thinnest limit due to the ambiguous electrical model and interaction process. Here, we report atomically thin memristive nanopores in two-dimensional materials by designing optimized ionic conductance to decouple the memristive, ohmic, and capacitive effects. By conducting different charged iontronics, we realize the reconfigurable memristive transition between nonvolatile-bipolar and volatile-unipolar characteristics, which arises from distinct transport processes governed by energy barriers. Notably, we emulate synaptic functions with ultralow energy consumption of ∼0.546 pJ per spike and reproduce biological learning behaviors. The memristive nanopores are similar to the biosystems in angstrom structure, rich iontronic responses, and millisecond-level operating pulse width, matching the biological potential width. This work provides a new paradigm for boosting brain-inspired nanofluidic devices.

Ionic Device: From Neuromorphic Computing to Interfacing with the Brain

In living organisms, the modulation of ion conductivity in ion channels of neuron cells enables intelligent behaviors, such as generating, transmitting, and storing neural signals. Drawing inspiration from these natural processes, researchers have fabricated ionic devices that replicate the functions of the nervous system. However, this field remains in its infancy, necessitating extensive foundational research in ionic device preparation, algorithm development, and biological interaction. This review summarizes recently developed neuromorphic ionic devices into three categories based on the materials states: liquid, semi-solid, and solid. The neural network algorithms embedded in these devices for neuromorphic computing are introduced, and future directions for the development of bidirectional human-computer interaction and hybrid human-computer intelligence are discussed.

Modulating Ionic Hysteresis to Selective Interaction Mechanism toward Transition from Supercapacitor-Memristor to Supercapacitor-Diode

The emerging ion-confined transport supercapacitors, including supercapacitor-diodes (CAPodes) and supercapacitor-memristors (CAPistors), offer potential for neuromorphic computing, brain-computer interface, signal propagation, and logic operations. This study reports a novel transition from CAPistor to CAPode via electrochemical cycling of a ZIF-7 electrode. X-ray absorption fine structure (XAFS) and electrochemical analyses reveal a shift from "ionic hysteresis" to "ionic selective interaction" in an alkaline electrolyte, elucidating the evolution of ionic devices. The CAPodes exhibit high rectification ratios, long cycling stability, and effective current blocking in reverse bias. Additionally, they are demonstrated in ionic logic circuits ("AND" and "OR" gates), with comparisons to traditional electronic diodes. This work advances the development of functional supercapacitors and iontronic devices for future capacitive computing architectures.

Mechano-Driven Neuromimetic Logic Gates Established by Geometrically Asymmetric Hydrogel Iontronics

The human brain's neural network demonstrates exceptional efficiency in information processing and recognition, driving advancements in neuromimetic devices that emulate neuronal functions such as signal integration and parallel transmission. A key challenge remains in replicating these functions while minimizing energy consumption. Here, inspired by neuronal signal integration and axonal bidirectional transmission, mechano-driven hydrogel logic gates leveraging the piezoionic effect is presented, offering a novel bionic approach with significantly reduced power consumption. By exerting external force on the thick and thin sides of the geometrically asymmetric hydrogel, spike signals of differing amplitudes and opposite polarities can be generated, corresponding to '1' and '0', respectively. The differential mobility of anions and cations plays a crucial role in the piezoionic effect. This geometric asymmetry amplifies ion convection, improving force-to-electricity conversion efficiency, while the inclusion of salts with varying ion size can further enhance this disparity, even reversing the signal direction. Arranging asymmetric hydrogel iontronics in series-parallel configurations enables the emulation of complex neuronal logic operations, facilitating ionic spike signal addition and subtraction. This hydrogel-based logic control has been directly applied in human-machine interaction to control robot arms and offers significant potential for the advancement of artificial intelligence, robotics, and wearable technologies.

Dual-Terminal Ion-Modulation Multiplier-Based Ion-Doped Stacked Semiconducting Nanosheets for Multifunctional Biomedical Applications

Stacked semiconducting nanosheets (SSNs), which feature strong in-plane covalent bonds but weak van der Waals (vdWs) interactions between adjacent layers, hold substantial promise in next-generation, printable, and flexible devices. Among them, SSN-based transistors with high current multiplication offer significant potential for large-area, high-integration electronics and biomedical applications. However, the three-terminal configuration of the transistor inevitably increases the process step and power unit. Here, we demonstrate a dual-terminal ion modulation multiplier (IMM) based on ion-doped SSNs, which was obtained through a solution-processed and cost-effective method. We observed an ion-induced self-multiplication effect occurring in the IMM, which significantly enhanced the sensing performance, particularly in thermal sensing. The IMM thermal sensor exhibited a high resolution of 0.02 K and ultrahigh sensitivity of ∼27%/K, more than 7 times higher than that of ion-type thermal sensors. By combining the enhanced operational stability of IMMs, we successfully developed a dual-channel stretchable respiratory sensor (dSRS) based on IMMs, capable of real-time monitoring of subnasal respiratory signals. The dSRS effectively distinguished normal, rapid, and deep breathing states while accurately detecting abnormal respiration, including apnea and hypopnea. Utilizing the unique properties of IMMs, we developed a monolithically integrated and high-performance IMM glucose sensor with temperature compensation. This IMM glucose sensor demonstrated a high sensitivity of 0.91%/μM, a low detection limit of 100 nM, and a high detection accuracy under temperature interference. Our results clearly demonstrate that IMM devices endow SSNs with promising electrical and sensing capabilities, paving the way for next-generation electronics in the post-Moore era.

Gel-Based Electrolytes for Organic Electrochemical Transistors: Mechanisms, Applications, and Perspectives

Organic electrochemical transistors (OECTs) have emerged as the core component of specialized bioelectronic technologies due to their high signal amplification capability, low operating voltage (<1 V), and biocompatibility. Under a gate bias, OECTs modulate device operation via ionic drift between the electrolyte and the channel. Compared to common electrolytes with a fluid nature (including salt aqueous solutions and ion liquids), gel electrolytes, with an intriguing structure consisting of a physically and/or chemically crosslinked polymer network where the interstitial spaces between polymers are filled with liquid electrolytes or mobile ion species, are promising candidates for quasi-solid electrolytes. Due to relatively high ionic conductivity, the potential for large-scale integration, and the capability to suppress channel swelling, gel electrolytes have been a research highlight in OECTs in recent years. This review summarizes recent progress on OECTs with gel electrolytes that demonstrate good mechanical as well as physical and chemical stabilities. Moreover, various components in forming gel electrolytes, including different mobile liquid phases and polymer components, are introduced. Furthermore, applications of these OECTs in the areas of sensors, neuromorphics, and organic circuits, are discussed. Last, future perspectives of OECTs based on gel electrolytes are discussed along with possible solutions for existing challenges.

Emerging Materials and Computing Paradigms for Temporal Signal Analysis

In the era of relentless data generation and dynamic information streams, the demand for efficient and robust temporal signal analysis has intensified across diverse domains such as healthcare, finance, and telecommunications. This perspective study explores the unfolding landscape of emerging materials and computing paradigms that are reshaping the way temporal signals are analyzed and interpreted. Traditional signal processing techniques often fall short when confronted with the intricacies of time-varying data, prompting the exploration of innovative approaches. The rise of emerging materials and devices empowers real-time analysis by processing temporal signals in situ, mitigating latency concerns. Through this perspective, the untapped potential of emerging materials and computing paradigms for temporal signal analysis is highlighted, offering valuable insights into both challenges and opportunities. Standing on the cusp of a new era in computing, understanding and harnessing these paradigms is pivotal for unraveling the complexities embedded within the temporal dimensions of data, propelling signal analysis into realms previously deemed inaccessible.

Wearable blood pressure sensors for cardiovascular monitoring and machine learning algorithms for blood pressure estimation

With advances in materials science and medical technology, wearable sensors have become crucial tools for the early diagnosis and continuous monitoring of numerous cardiovascular diseases, including arrhythmias, hypertension and coronary artery disease. These devices employ various sensing mechanisms, such as mechanoelectric, optoelectronic, ultrasonic and electrophysiological methods, to measure vital biosignals, including pulse rate, blood pressure and changes in heart rhythm. In this Review, we provide a comprehensive overview of the current state of wearable cardiovascular sensors, focusing particularly on those that measure blood pressure. We explore biosignal sensing principles, discuss blood pressure estimation methods (including machine learning algorithms) and summarize the latest advances in cuffless wearable blood pressure sensors. Finally, we highlight the challenges of and offer insights into potential pathways for the practical application of cuffless wearable blood pressure sensors in the medical field from both technical and clinical perspectives.

Based on Silicon-Gel Polymer Electrolyte Dielectric of Low Impedance Tribovoltaic Nanogenerator

As an innovative renewable energy harvester, the tribovoltaic nanogenerator (TVNG) with lower impedance and DC characteristics has attracted much attention. To alleviate the issues of severe wear for hard-hard semiconductor materials, here, a soft ion dielectric material and semiconductor TVNG based on n-Si/gel polymer electrolyte (GPE) (GPE-TVNG) is proposed. A solid ionic electric double layer (i-EDL) model is established to systematically explore the generation mechanism as well. Moreover, the proposed i-EDL model is verified by subsequent experiments, and the results manifest that the ion directed migration can improve the output performance of GPE-TVNG. The optimized GPE-TVNG has a short-circuit current of 26.5 μA and a low matched impedance of 60 kΩ, which is far lower than the previous reported internal resistance of Si-based TVNG (>100 kΩ). This study broadens the selection of TVNG materials and realizes the effective control of TVNG output.

Solid-State Oxide-Ion Synaptic Transistor for Neuromorphic Computing

Neuromorphic hardware facilitates rapid and energy-efficient training and operation of neural network models for artificial intelligence. However, existing analog in-memory computing devices, like memristors, continue to face significant challenges that impede their commercialization. These challenges include high variability due to their stochastic nature. Microfabricated electrochemical synapses offer a promising approach by functioning as an analog programmable resistor based on deterministic ion-insertion mechanisms. Here, an all-solid-state oxide-ion synaptic transistor is developed, employing Bi2V0.9Cu0.1O5.35 as a superior oxide-ion conductor electrolyte and La0.5Sr0.5FeO3-δ as a variable-resistance channel able to efficiently operate at temperatures compatible with conventional electronics. This transistor exhibits essential synaptic behaviors such as long- and short-term potentiation, paired-pulse facilitation, and post-tetanic potentiation, mimicking fundamental properties of biological neural networks. Key criteria for efficient neuromorphic computing are satisfied, including excellent linear and symmetric synaptic plasticity, low energy consumption per programming pulse, and high endurance with minimal cycle-to-cycle variation. Integrated into an artificial neural network (ANN) simulation for handwritten digit recognition, the presented synaptic transistor achieved a 96% accuracy on the Modified National Institute of Standards and Technology (MNIST) dataset, illustrating the effective implementation of the device in ANNs. These findings demonstrate the potential of oxide-ion based synaptic transistors for effective implementation in analog neuromorphic computing based on iontronics.

Bioactive Ion-Confined Ultracapacitive Memristors with Neuromorphic Functions

The field of bioinspired iontronics, bridging electronic devices and ionic systems, has multiple biological applications. Carbon-based ultracapacitive devices hold promise for controlling bioactive ions via electric double layers due to their high-surface-area and biocompatible porous carbon electrodes. However, the interplay between complex bioactive ions and porous carbons remains unclear due to the variety of structures of bioactive ions present in biological systems. Herein, we investigate the adsorption behavior of a series of bioactive ammonium-based cations with varying alkyl chain lengths in nanoporous carbons. We find that strong physisorption results from the synergistic hydrophobic interaction and electrostatic attraction between porous carbons (with a negative zeta potential) and bioactive cations. Bioactive cations with varying alkyl chain lengths can be irreversibly physically adsorbed and confined within nanoporous carbons resulting in anion enrichment and depletion during electric polarization. This situation, in turn, results in a characteristic memristive behavior in all-carbon capacitive ionic memristor devices. Our findings highlight the relationship between the resistance state of the memristor and ion adsorption mechanisms in all-carbon capacitive devices, which hold potential for future transmitter delivery, biointerfacing, and neuromorphic devices.

Electrically induced insulator-to-metal transition in InP-based ion-gated transistor

With the growing awareness of energy savings and consumption for a sustainable ecosystem, the concept of iontronics, that is, controlling electronic devices with ions, has become critically important. Composite devices made of ions and solid materials have been investigated for diverse applications, ranging from energy storage to power generation, memory, biomimetics, and neuromorphic devices. In these studies, three terminal transistor configurations with liquid electrolytes have often been utilized because of their simple device structures and relatively easy fabrication processes. To date, oxide semiconductors and layered materials have mainly been used as active materials. However, inorganic compound semiconductors, which have a long history of basic and applied research, hardly function as channel materials in ion-gated transistors, partly because of the Schottky barrier at the electrode interface. Herein, we show that a typical group III-V compound semiconductor, InP, is available as a high-performance channel for ion-gated transistors with an on/off current ratio of ≈ 105 and a subthreshold swing as small as 93 mV/dec at room temperature. We fabricated AuGe/Ni contact electrodes via annealing to obtain the Ohmic contacts over a wide temperature range. The electrical resistance of InP was drastically decreased by the ionic liquid gating, which led to an electrically induced insulator-to-metal transition. Bulk compound semiconductors are well characterized and have relatively high carrier mobilities; thus, devices combined with electrolytes should prompt the development of iontronics research for novel device functionalities.

Highly Conducting and Ultra-Stretchable Wearable Ionic Liquid-Free Transducer for Wireless Monitoring of Physical Motions

Wearable strain transducers are poised to transform the field of healthcare owing to the promise of personalized devices capable of real-time collection of human physiological health indicators. For instance, monitoring patients' progress following injury and/or surgery during physiotherapy is crucial but rarely performed outside clinics. Herein, multifunctional liquid-free ionic elastomers are designed through the volume effect and the formation of dynamic hydrogen bond networks between polyvinyl alcohol (PVA) and weak acids (phosphoric acid, phytic acid, formic acid, citric acid). An ultra-stretchable (4600% strain), highly conducting (10 mS cm-1), self-repairable (77% of initial strain), and adhesive ionic elastomer is obtained at high loadings of phytic acid (4:1 weight to PVA). Moreover, the elastomer displayed durable performances, with intact mechanical properties after a year of storage. The elastomer is used as a transducer to monitor human motions in a device comprising an ESP32-based development board. The device detected walking and/or running biomechanics and communicated motion-sensing data (i.e., amplitude, frequency) wirelessly. The reported technology can also be applied to other body parts to monitor recovery after injury and/or surgery and inform practitioners of motion biomechanics remotely and in real time to increase convalescence effectiveness, reduce clinic appointments, and prevent injuries.

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

Gate-controlled ionic intercalation in the van der Waals gap of 2D layered materials can induce novel phases and unlock new properties. However, this strategy is often unsuitable for densely packed 2D non-layered materials. The non-layered rhombohedral Cr2S3 is an intrinsic heterodimensional superlattice with alternating layers of 2D CrS2 and 0D Cr1/3. Here an innovative chemical vapor deposition method is reported, utilizing strategically modified metal precursors to initiate entirely new seed layers, yields ultrathin inclined-standing grown 2D Cr2S3 nanosheets with edge instead of face contact with substrate surfaces, enabling rapid all-dry transfer to other substrates while ensuring high crystal quality. The unconventional ordered vacancy channels within the 0D Cr1/3 layers, as revealed by cross-sectional scanning transmission electron microscope, permitting the insertion of Li+ ions. An unprecedented metal-insulator transition, with a resistance modulation of up to six orders of magnitude at 300 K, is observed in Cr2S3-based ionic field-effect transistors. Theoretical calculations corroborate the metallization induced by Li-ion intercalation. This work sheds light on the understanding of growth mechanism, structure-property correlation and highlights the diverse potential applications of 2D non-layered Cr2S3 superlattice.

Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

Exploration and advancements in ultrawide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. Here, we used a thin heterostructure design to facilitate high conductivity due to the low electron mass and relatively weak electron-phonon coupling, while the atomically thin films ensured high transparency. We used a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110), and applied electrostatic gating, which allow us to effectively separate charge carriers in SrSnO3 from dopants and achieve phonon-limited transport behavior in strain-stabilized tetragonal SrSnO3. This led to a modulation of carrier density from 1018 to 1020 cm-3, with room temperature mobilities ranging from 40 to 140 cm2 V-1 s-1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room temperature mobility could be further increased with higher electron density. In addition, the sample exhibited 85% optical transparency at a 300-nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in DUV regime.

Unveiling the role of dopants in boosting CuS supercapacitor performance: insights from first-principles calculations

Transition metal sulfides have become famous in high energy density supercapacitor materials owing to their rich redox and high conductivity. While their development has achieved a breakthrough in terms of capacitance, there is little knowledge from the theoretical perspective on how dopants play a role in enhancing their capacitances. In this work, pseudocapacitance and quantum capacitance were evaluated through first-principles calculation to describe their role in transition metal sulfide, which here is represented by copper sulfide (CuS). The resulting quantum capacitance (CQ) was calculated in both the bulk and surface of CuS to determine which structure has a greater effect on the capacitance of the system. It was observed that the dopant increased CQ in the bulk system, which is different from the CQ of surface structures. Meanwhile, K+ ions were introduced on the surface structure to calculate transfer charge and work function shift, thus determining pseudocapacitance. All dopant types were able to increase the pseudocapacitance value, with Fe doping showing the highest capacitance of 111 F g-1, which is higher than that of the pristine structure (47 F g-1). The role of the dopant is discussed in detail in this work. Our results suggest that the increased capacitance of doped TMS materials was originated not only from the geometrical perspective but also from the higher pseudocapacitance value. Quantum capacitance, alternatively, could also contribute to the system when the dopant occurs in the bulk rather than only in the surface structure. This work may open a new perspective on how dopants play a role in increasing supercapacitor performance.

All-Oxide Metasurfaces Formed by Synchronized Local Ionic Gating

Ionic gating of oxide thin films has emerged as a novel way of manipulating the properties of thin films. Most studies are carried out on single devices with a three-terminal configuration, but, by exploring the electrokinetics during the ionic gating, such a configuration with initially insulating films leads to a highly non-uniform gating response of individual devices within large arrays of the devices. It is shown that such an issue can be circumvented by the formation of a uniform charge potential by the use of a thin conducting underlayer. This synchronized local ionic gating allows for the simultaneous manipulation of the electrical, magnetic, and/or optical properties of large arrays of devices. Designer metasurfaces formed in this way from SrCoO2.5 thin films display an anomalous optical reflection of light that relies on the uniform and coherent response of all the devices. Beyond oxides, almost any material whose properties can be controlled by the addition or removal of ions via gating can form novel metasurfaces using this technique. These findings provide insights into the electrokinetics of ionic gating and a wide range of applications using synchronized local ionic gating.

PEDOT:PSS-Based Prolonged Long-Term Decay Synaptic OECT with Proton-Permeable Material, Nafion

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS), a conductive polymer, has gained popularity as the channel layer in organic electrochemical transistors (OECTs) due to its high conductivity and straightforward processing. However, difficulties arise in controlling its conductivity through gate voltage, presenting a challenge. To address this issue, aromatic amidine base, diazabicyclo[4.3.0]non-5-ene (DBN), is used to stabilize the doping state of the PEDOT chain through a reliable chemical de-doping process. Furthermore, the addition of the proton-penetrable material Nafion to the PEDOT:PSS channel layer induces phase separation between the substances. By utilizing a solution containing both PEDOT:PSS and Nafion as the channel layer of OECTs, the efficiency of ion movement into the channel from the electrolyte is enhanced, resulting in improved OECT performance. The inclusion of Nafion in the OECTs' channel layer modifies ion movement dynamics, allowing for the adjustment of synaptic properties such as pulse-paired facilitation, memory level, short-term plasticity, and long-term plasticity. This research aims to introduce new possibilities in the field of neuromorphic computing and contribute to biomimetic technology through the enhancement of electronic component performance.

Biomimetic Neuromorphic Sensory System via Electrolyte Gated Transistors

Biomimetic neuromorphic sensing systems, inspired by the structure and function of biological neural networks, represent a major advancement in the field of sensing technology and artificial intelligence. This review paper focuses on the development and application of electrolyte gated transistors (EGTs) as the core components (synapses and neuros) of these neuromorphic systems. EGTs offer unique advantages, including low operating voltage, high transconductance, and biocompatibility, making them ideal for integrating with sensors, interfacing with biological tissues, and mimicking neural processes. Major advances in the use of EGTs for neuromorphic sensory applications such as tactile sensors, visual neuromorphic systems, chemical neuromorphic systems, and multimode neuromorphic systems are carefully discussed. Furthermore, the challenges and future directions of the field are explored, highlighting the potential of EGT-based biomimetic systems to revolutionize neuromorphic prosthetics, robotics, and human-machine interfaces. Through a comprehensive analysis of the latest research, this review is intended to provide a detailed understanding of the current status and future prospects of biomimetic neuromorphic sensory systems via EGT sensing and integrated technologies.

PbI2 Passivation of Three Dimensional PbS Quantum Dot Superlattices Toward Optoelectronic Metamaterials

Lead chalcogenide colloidal quantum dots are one of the most promising materials to revolutionize the field of short-wavelength infrared optoelectronics due to their bandgap tunability and strong absorption. By self-assembling these quantum dots into ordered superlattices, mobilities approaching those of the bulk counterparts can be achieved while still retaining their original optical properties. The recent literature focused mostly on PbSe-based superlattices, but PbS quantum dots have several advantages, including higher stability. In this work, we demonstrate highly ordered 3D superlattices of PbS quantum dots with tunable thickness up to 200 nm and high coherent ordering, both in-plane and along the thickness. We show that we can successfully exchange the ligands throughout the film without compromising the ordering. The superlattices as the active material of an ion gel-gated field-effect transistor achieve electron mobilities up to 220 cm2 V-1 s-1. To further improve the device performance, we performed a postdeposition passivation with PbI2, which noticeably reduced the subthreshold swing making it reach the Boltzmann limit. We believe this is an important proof of concept showing that it is possible to overcome the problem of high trap densities in quantum dot superlattices enabling their application in optoelectronic devices.

Nanofluidic Ionic Memristors

Living organisms use ions and small molecules as information carriers to communicate with the external environment at ultralow power consumption. Inspired by biological systems, artificial ion-based devices have emerged in recent years to try to realize efficient information-processing paradigms. Nanofluidic ionic memristors, memory resistors based on confined fluidic systems whose internal ionic conductance states depend on the historical voltage, have attracted broad attention and are used as neuromorphic devices for computing. Despite their high exposure, nanofluidic ionic memristors are still in the initial stage. Therefore, systematic guidance for developing and reasonably designing ionic memristors is necessary. This review systematically summarizes the history, mechanisms, and potential applications of nanofluidic ionic memristors. The essential challenges in the field and the outlook for the future potential applications of nanofluidic ionic memristors are also discussed.

Stimuli-Responsive Delivery of Ions through Layered Materials-Based Triangular Nanofluidic Device

The elegance and accuracy of biological ion channels inspire the fabrication of artificial devices with similar properties. Here, we report the fabrication of iontronic devices capable of delivering ions at the nanomolar (nmol) level of accuracy. The triangular nanofluidic device prepared with reconstructed vanadium pentoxide (VO) membranes of thickness 45 ± 5.5 μm can continuously deliver K+, Na+, and Ca2+ ions at the rate of 0.44 ± 0.24, 0.35 ± 0.06, and 0.03 nmol/min, respectively. The ionic flow rate can be further tuned by modulating the membrane thickness and salt concentration at the source reservoir. The triangular VO device can also deliver ions in minuscule doses (∼132 ± 9.7 nmol) by electrothermally heating (33 °C) with a nichrome wire (NW) or applying light of specific intensities. The simplicity of the fabrication process of reconstructed layered material-based nanofluidic devices allows the design of complicated iontronic devices such as the three-terminal-Ni-VO (3T-Ni-VO) devices.

Human somatosensory systems based on sensor-memory-integrated technology

As a representative artificial neural network (ANN) for incorporating sensing functions and memory functions into one system to achieve highly miniaturized and highly integrated devices or systems, artificial sensory systems (ASSs) can have a far-reaching influence on precise instrumentation, sensing, and automation engineering. Artificial sensory systems have enjoyed considerable progress in recent years, from low degree integrations to highly advanced sophisticated integrations, from single-modal perceptions to multimode-fused perceptions. However, there are issues around the large hardware area, power consumption, and communication bandwidth needed during the processes where multimodal sensing signals are converted into a digital mode before they can be processed by a digital processor. Therefore, deepening the research into sensory integration is of great importance. In this review, we briefly introduce fundamental knowledge about the memristor mechanism, describe some representative human somatosensory systems, and elucidate the relationship between the properties of memristor devices and the structure. The electronic character of the sensors, future prospects, and key challenges surrounding sensor-memory integrated technologies are also discussed.

Morphology-Controlled Ion Transport in Mixed-Orientation Polymers

Advancing iontronics with precisely controlled ion transport is fundamentally important to bridge external organic electronics with the biosystem. This long-standing goal, however, is thus far limited by the trade-off between the active ion electromigration and idle diffusion leakage in the (semi)crystalline film. Here, we presented a mixed-orientation strategy by blending a conjugated polymer, allowing for simultaneously high ion electromigration efficiency and low leakage. Our studies revealed that edge-on aggregation with a significant percolative pathway exhibits much higher ion permeability than that of the face-on counterpart but encounters pronounced leakage diffusion. Through carefully engineering the mixed orientations, the polymer composite demonstrated an ideal switchable ion-transport behavior, achieving a remarkably high electromigration efficiency exceeding one quadrillion ions per milliliter per minute and negligible idle leakage. This proof of concept, validated by drug release in a skin-conformable organic electronic ion pump (OEIP), offers a rational approach for the development of multifunctional iontronic devices.

Spatial evolution of the proton-coupled Mott transition in correlated oxides for neuromorphic computing

The proton-electron coupling effect induces rich spectrums of electronic states in correlated oxides, opening tempting opportunities for exploring novel devices with multifunctions. Here, via modest Pt-aided hydrogen spillover at room temperature, amounts of protons are introduced into SmNiO3-based devices. In situ structural characterizations together with first-principles calculation reveal that the local Mott transition is reversibly driven by migration and redistribution of the predoped protons. The accompanying giant resistance change results in excellent memristive behaviors under ultralow electric fields. Hierarchical tree-like memory states, an instinct displayed in bio-synapses, are further realized in the devices by spatially varying the proton concentration with electric pulses, showing great promise in artificial neural networks for solving intricate problems. Our research demonstrates the direct and effective control of proton evolution using extremely low electric field, offering an alternative pathway for modifying the functionalities of correlated oxides and constructing low-power consumption intelligent devices and neural network circuits.

Covalent Organic Frameworks: Linkage Chemistry and Its Critical Role in The Evolution of π Electronic Structures and Functions

Covalent organic frameworks (COFs) provide a molecular platform for designing a novel class of functional materials with well-defined structures. A crucial structural parameter is the linkage, which dictates how knot and linker units are connected to form two-dimensional polymers and layer frameworks, shaping ordered π-array and porous architectures. However, the roles of linkage in the development of ordered π electronic structures and functions remain fundamental yet unresolved issues. Here we report the designed synthesis of COFs featuring four representative linkages: hydrazone, imine, azine, and C=C bonds, to elucidate their impacts on the evolution of π electronic structures and functions. Our observations revealed that the hydrazone linkage provides a non-conjugated connection, while imine and azine allow partial π conjugation, and the C=C bond permits full π-conjugation. Importantly, the linkage profoundly influences the control of π electronic structures and functions, unraveling its pivotal role in determining key electronic properties such as band gap, frontier energy levels, light absorption, luminescence, carrier density and mobility, and magnetic permeability. These findings highlight the significance of linkage chemistry in COFs and offer a general and transformative guidance for designing framework materials to achieve electronic functions.

Functional metal-organic liquids

For decades, the study of coordination polymers (CPs) and metal-organic frameworks (MOFs) has been limited primarily to their behavior as crystalline solids. In recent years, there has been increasing evidence that they can undergo reversible crystal-to-liquid transitions. However, their "liquid" states have primarily been considered intermediate states, and their diverse properties and applications of the liquid itself have been overlooked. As we learn from organic polymers, ceramics, and metals, understanding the structures and properties of liquid states is essential for exploring new properties and functions that are not achievable in their crystalline state. This review presents state-of-the-art research on the liquid states of CPs and MOFs while discussing the fundamental concepts involved in controlling them. We consider the different types of crystal-to-liquid transitions found in CPs and MOFs while extending the interpretation toward other functional metal-organic liquids, such as metal-containing ionic liquids and porous liquids, and try to suggest the unique features of CP/MOF liquids. We highlight their potential applications and present an outlook for future opportunities.

Influence of Lifshitz Transition on the Intrinsic Resistivity of Cu2N Monolayer

The Lifshitz transition (LT), a topological structure transition of Fermi surfaces, can induce various intricate physical properties in metallic materials. In this study, through first-principles calculations, we explore the nontrivial effect of the LT on the intrinsic resistivity of the Cu2N monolayer arising from electron-phonon (el-ph) scattering. We find that when the LT is induced by electron doping, the multibranch Fermi surface simplifies into a single-band profile. Such an LT leads to a decoupling of low-frequency flexural phonons from el-ph scattering due to mirror symmetry. Consequently, the resistivity of the Cu2N monolayer at room temperature significantly decreases, approaching that of slightly doped graphene, and highlighting the Cu2N monolayer as a highly conductive two-dimensional metal. Moreover, this LT can bring about a nonlinear temperature dependence of the intrinsic resistivity at a high temperature.

High Volumetric Energy Density Supercapacitor of Additive-Free Quantum Dot Hierarchical Nanopore Structure

The high surface-area-to-volume ratio of colloidal quantum dots (QDs) positions them as promising materials for high-performance supercapacitor electrodes. However, the challenge lies in achieving a highly accessible surface area, while maintaining good electrical conductivity. An efficient supercapacitor demands a dense yet highly porous structure that facilitates efficient ion-surface interactions and supports fast charge mobility. Here we demonstrate the successful development of additive-free ultrahigh energy density electric double-layer capacitors based on quantum dot hierarchical nanopore (QDHN) structures. Lead sulfide QDs are assembled into QDHN structures that strike a balance between electrical conductivity and efficient ion diffusion by employing meticulous control over inter-QD distances without any additives. Using ionic liquid as the electrolyte, the high-voltage ultrathin-film microsupercapacitors achieve a remarkable combination of volumetric energy density (95.6 mWh cm-3) and power density (13.5 W cm-3). This achievement is attributed to the intrinsic capability of QDHN structures to accumulate charge carriers efficiently. These findings introduce innovative concepts for leveraging colloidal nanomaterials in the advancement of high-performance energy storage devices.

Mechanisms of Hysteresis and Reversibility across the Voltage-Driven Perovskite-Brownmillerite Transformation in Electrolyte-Gated Ultrathin La0.5Sr0.5CoO3-δ

Perovskite cobaltites have emerged as archetypes for electrochemical control of materials properties in electrolyte-gate devices. Voltage-driven redox cycling can be performed between fully oxygenated perovskite and oxygen-vacancy-ordered brownmillerite phases, enabling exceptional modulation of the crystal structure, electronic transport, thermal transport, magnetism, and optical properties. The vast majority of studies, however, have focused heavily on the perovskite and brownmillerite end points. In contrast, here we focus on hysteresis and reversibility across the entire perovskite ↔ brownmillerite topotactic transformation, combining gate-voltage hysteresis loops, minor hysteresis loops, quantitative operando synchrotron X-ray diffraction, and temperature-dependent (magneto)transport, on ion-gel-gated ultrathin (10-unit-cell) epitaxial La0.5Sr0.5CoO3-δ films. Gate-voltage hysteresis loops combined with operando diffraction reveal a wealth of new mechanistic findings, including asymmetric redox kinetics due to differing oxygen diffusivities in the two phases, nonmonotonic transformation rates due to the first-order nature of the transformation, and limits on reversibility due to first-cycle structural degradation. Minor loops additionally enable the first rational design of an optimal gate-voltage cycle. Combining this knowledge, we demonstrate state-of-the-art nonvolatile cycling of electronic and magnetic properties, encompassing >105 transport ON/OFF ratios at room temperature, and reversible metal-insulator-metal and ferromagnet-nonferromagnet-ferromagnet cycling, all at 10-unit-cell thickness with high room-temperature stability. This paves the way for future work to establish the ultimate cycling frequency and endurance of such devices.

Reconfigurable optoelectronic transistors for multimodal recognition

Biological nervous system outperforms in both dynamic and static information perception due to their capability to integrate the sensing, memory and processing functions. Reconfigurable neuromorphic transistors, which can be used to emulate different types of biological analogues in a single device, are important for creating compact and efficient neuromorphic computing networks, but their design remains challenging due to the need for opposing physical mechanisms to achieve different functions. Here we report a neuromorphic electrolyte-gated transistor that can be reconfigured to perform physical reservoir and synaptic functions. The device exhibits dynamics with tunable time-scales under optical and electrical stimuli. The nonlinear volatile property is suitable for reservoir computing, which can be used for multimodal pre-processing. The nonvolatility and programmability of the device through ion insertion/extraction achieved via electrolyte gating, which are required to realize synaptic functions, are verified. The device's superior performance in mimicking human perception of dynamic and static multisensory information based on the reconfigurable neuromorphic functions is also demonstrated. The present study provides an exciting paradigm for the realization of multimodal reconfigurable devices and opens an avenue for mimicking biological multisensory fusion.

Ionic Rectification by Dynamic Regulation of the Electric Double Layer at the Hydrogel Interface

Hydrogels play a pivotal role in the realm of iontronics, contributing to the realization of futuristic human-machine interactions. The electric double layer (EDL) between the hydrogel and electrode provides an essential ionic-electronic coupling interface. While prior investigations primarily delved into elucidating the formation mechanism of the EDL, our study shifts the focus to showcasing the current generation through the mechanical modulation of the EDL at the hydrogel-metal interfaces. The dynamic EDL was constructed by the mechano-driven contact-separation process between the polyacrylamide (PAAm) hydrogel and Au. Influencing factors on the dynamic regulation of the EDL such as ion concentration, types of salt, contact-separation frequency, and deformation degree were investigated. Dehydration usually limits the practical applications of hydrogels, and it is a long-standing and difficult problem. However, it seemed to be able to slow the EDL formation process here, resulting in a sustained continuous direct current signal output. Such hydrogel iontronics could rectify the displacement electronic current of a triboelectric nanogenerator by the ionic current. The directional migration of ions could be further enhanced by using charge-collecting metals with different work functions, for example, Au and Al. It offers a paradigm to enable ionic rectification that could be seamlessly incorporated into electronic systems, ushering in a new era for efficient energy harvesting and biomimetic nervous systems.

A bionic self-driven retinomorphic eye with ionogel photosynaptic retina

Bioinspired bionic eyes should be self-driving, repairable and conformal to arbitrary geometries. Such eye would enable wide-field detection and efficient visual signal processing without requiring external energy, along with retinal transplantation by replacing dysfunctional photoreceptors with healthy ones for vision restoration. A variety of artificial eyes have been constructed with hemispherical silicon, perovskite and heterostructure photoreceptors, but creating zero-powered retinomorphic system with transplantable conformal features remains elusive. By combining neuromorphic principle with retinal and ionoelastomer engineering, we demonstrate a self-driven hemispherical retinomorphic eye with elastomeric retina made of ionogel heterojunction as photoreceptors. The receptor driven by photothermoelectric effect shows photoperception with broadband light detection (365 to 970 nm), wide field-of-view (180°) and photosynaptic (paired-pulse facilitation index, 153%) behaviors for biosimilar visual learning. The retinal photoreceptors are transplantable and conformal to any complex surface, enabling visual restoration for dynamic optical imaging and motion tracking.

Age of Flexible Electronics: Emerging Trends in Soft Multifunctional Sensors

With the commercialization of first-generation flexible mobiles and displays in the late 2010s, humanity has stepped into the age of flexible electronics. Inevitably, soft multifunctional sensors, as essential components of next-generation flexible electronics, have attracted tremendous research interest like never before. This review is dedicated to offering an overview of the latest emerging trends in soft multifunctional sensors and their accordant future research and development (R&D) directions for the coming decade. First, key characteristics and the predominant target stimuli for soft multifunctional sensors are highlighted. Second, important selection criteria for soft multifunctional sensors are introduced. Next, emerging materials/structures and trends for soft multifunctional sensors are identified. Specifically, the future R&D directions of these sensors are envisaged based on their emerging trends, namely i) decoupling of multiple stimuli, ii) data processing, iii) skin conformability, and iv) energy sources. Finally, the challenges and potential opportunities for these sensors in future are discussed, offering new insights into prospects in the fast-emerging technology.

Redox Gating for Colossal Carrier Modulation and Unique Phase Control

Redox gating, a novel approach distinct from conventional electrolyte gating, combines reversible redox functionalities with common ionic electrolyte moieties to engineer charge transport, enabling power-efficient electronic phase control. This study achieves a colossal sheet carrier density modulation beyond 1016 cm-2, sustainable over thousands of cycles, all within the sub-volt regime for functional oxide thin films. The key advantage of this method lies in the controlled injection of a large quantity of carriers from the electrolyte into the channel material without the deleterious effects associated with traditional electrolyte gating processes such as the production of ionic defects or intercalated species. The redox gating approach offers a simple and practical means of decoupling electrical and structural phase transitions, enabling the isostructural metal-insulator transition and improved device endurance. The versatility of redox gating extends across multiple materials, irrespective of their crystallinity, crystallographic orientation, or carrier type (n- or p-type). This inclusivity encompasses functional heterostructures and low-dimensional quantum materials composed of sustainable elements, highlighting the broad applicability and potential of the technique in electronic devices.

Reduction-Induced Magnetic Behavior in LaFeO3-δ Thin Films

The effect of oxygen reduction on the magnetic properties of LaFeO3-δ (LFO) thin films was studied to better understand the viability of LFO as a candidate for magnetoionic memory. Differences in the amount of oxygen lost by LFO and its magnetic behavior were observed in nominally identical LFO films grown on substrates prepared using different common methods. In an LFO film grown on as-received SrTiO3 (STO) substrate, the original perovskite film structure was preserved following reduction, and remnant magnetization was only seen at low temperatures. In a LFO film grown on annealed STO, the LFO lost significantly more oxygen and the microstructure decomposed into La- and Fe-rich regions with remnant magnetization that persisted up to room temperature. These results demonstrate an ability to access multiple, distinct magnetic states via oxygen reduction in the same starting material and suggest LFO may be a suitable materials platform for nonvolatile multistate memory.

Pseudocapacitance-Induced Synaptic Plasticity of Tribo-Phototronic Effect Between Ionic Liquid and 2D MoS2

Contact-induced electrification, commonly referred to as triboelectrification, is the subject of extensive investigation at liquid-solid interfaces due to its wide range of applications in electrochemistry, energy harvesting, and sensors. This study examines the triboelectric between an ionic liquid and 2D MoS2 under light illumination. Notably, when a liquid droplet slides across the MoS2 surface, an increase in the generated current and voltage is observed in the forward direction, while a decrease is observed in the reverse direction. This suggests a memory-like tribo-phototronic effect between ionic liquid and 2D MoS2 . The underlying mechanism behind this tribo-phototronic synaptic plasticity is proposed to be ion adsorption/desorption processes resulting from pseudocapacitive deionization/ionization at the liquid-MoS2  interface. This explanation is supported by the equivalent electrical circuit modeling, contact angle measurements, and electronic band diagrams. Furthermore, the influence of various factors such as velocity, step size, light wavelength and intensity, ion concentration, and bias voltage is thoroughly investigated. The artificial synaptic plasticity arising from this phenomenon exhibits significant synaptic features, including potentiation/inhibition, paired-pulse facilitation/depression, and short-term memory (STM) to long-term memory (LTM) transition. This research opens up promising avenues for the development of synaptic memory systems and intelligent sensing applications based on liquid-solid interfaces.

Stretchable, Programmable and Magnet-Insensitive Protonic Display Based on Integrated Ionic Circuit

As a new approach to "More than Moore", integrated ionic circuits serve as a possible alternative to traditional electronic circuits, yet the integrated ionic circuit composed of functional ionic elements and ionic connections is still challenging. Herein, a stretchable and transparent ionic display module of the integrated ionic circuit has been successfully prepared and demonstrated by pixelating a proton-responsive hydrogel. It is programmed to excite the hydrogel color change by a Faraday process occurring at the electrode at the specific pixel points, which enables the display of digital information and even color information. Importantly, the display module exhibits stable performance under strong magnetic field conditions (1.7 T). The transparent and stretchable nature of such ionic modules also allows them to be utilized in a broad range of scenarios, which paves the way for integrated ionic circuits.

Structure and stability of La- and hole-doped hafnia with/without epitaxial strain

The significance of hafnia in the semiconductor industry has been amplified following the unearthing of its ferroelectric properties. We investigated the structure and electrical properties of La- and hole-doped HfO2with/without epitaxial strain by first-principles calculations. It is found that the charge compensated defect with oxygen vacancy (LaHfVO) and uncompensated defect (LaHf), compared to the undoped case, make the ferroelectric orthorhombicPca21phase (ophase) more stable. Conversely, the electrons compensated defect (LaHf+e) makes the nonpolar monoclinicP21/cphase (mphase) more stable. Furthermore, both pure hole doping (without ions substituent) and compressive strain can stabilize theophase. Our work offers a new perspective on enhancing the ferroelectricity of hafnia.

Electrostatic Gating of Spin Dynamics of a Quasi-2D Kagome Magnet

Electrostatic gating has emerged as a powerful technique for tailoring the magnetic properties of two-dimensional (2D) magnets, offering exciting prospects including enhancement of magnetic anisotropy, boosting Curie temperature, and strengthening exchange coupling effects. Here, we focus on electrical control of the ferromagnetic resonance of the quasi-2D Kagome magnet Cu(1,3-bdc). By harnessing an electrostatic field through ionic liquid gating, significant shifts are observed in the ferromagnetic resonance field in both out-of-plane and in-plane measurements. Moreover, the effective magnetization and gyromagnetic ratios display voltage-dependent variations. A closer examination reveals that the voltage-induced changes can modulate magnetocrystalline anisotropy by several hundred gauss, while the impact on orbital magnetization remains relatively subtle. Density functional theory (DFT) calculations reveal varying d-orbital hybridizations at different voltages. This research unveils intricate physics within the Kagome lattice magnet and further underscores the potential of electrostatic manipulation in steering magnetism with promising implications for the development of spintronic devices.

Stretchable and neuromorphic transistors for pain perception and sensitization emulation

Pain perception nociceptors (PPN), an important type of sensory neuron, are capable of sending out alarm signals when the human body is exposed to destructive stimuli. Simulating the human ability to perceive the external environment and spontaneously avoid injury is a critical function of neural sensing of artificial intelligence devices. The demand for developing artificial PPN has subsequently increased. However, due to the application scenarios of bionic electronic devices such as human skin, electronic prostheses, and robot bodies, where a certain degree of surface deformation constantly occurs, the ideal artificial PPN should have the stretchability to adapt to real scenarios. Here, an organic semiconductor nanofiber artificial pain perception nociceptor (NAPPN) based on a pre-stretching strategy is demonstrated to achieve key pain aspects such as threshold, sensitization, and desensitization. Remarkably, while stretching up to 50%, the synaptic behaviors and injury warning ability of NAPPN can be retained. To verify the wearability of the device, NAPPN was attached to a curved human finger joint, on which PPN behaviors were successfully mimicked. This provides a promising strategy for realizing neural sensing function on either deformed or mobile electronic devices.