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Wang T, Wang Y, Fu Y, Chen Z, Jiang C, Ji YE, Lu Y. Angle-Multiplexed 3D Photonic Superstructures with Multi-Directional Switchable Structural Color for Information Transformation, Storage, and Encryption. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2400442. [PMID: 38757669 DOI: 10.1002/advs.202400442] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/12/2024] [Indexed: 05/18/2024]
Abstract
Creating photonic crystals that can integrate and switch between multiple structural color images will greatly advance their utility in dynamic information transformation, high-capacity storage, and advanced encryption, but has proven to be highly challenging. Here, it is reported that by programmably integrating newly developed 1D quasi-periodic folding structures into a 3D photonic crystal, the generated photonic superstructure exhibits distinctive optical effects that combine independently manipulatable specular and anisotropic diffuse reflections within a versatile protein-based platform, thus creating different optical channels for structural color imaging. The polymorphic transition of the protein format allows for the facile modulation of both folding patterns and photonic lattices and, therefore, the superstructure's spectral response within each channel. The capacity to manipulate the structural assembly of the superstructure enables the programmable encoding of multiple independent patterns into a single system, which can be decoded by the simple adjustment of lighting directions. The multifunctional utility of the photonic platform is demonstrated in information processing, showcasing its ability to achieve multimode transformation of information codes, multi-code high-capacity storage, and high-level numerical information encryption. The present strategy opens new pathways for achieving multichannel transformable imaging, thereby facilitating the development of emerging information conversion, storage, and encryption media using photonic crystals.
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Affiliation(s)
- Tao Wang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yu Wang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yinghao Fu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Zhaoxian Chen
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Chang Jiang
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yue-E Ji
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
| | - Yanqing Lu
- National Laboratory of Solid State Microstructures, Key Laboratory of Intelligent Optical Sensing and Manipulation, College of Engineering and Applied Sciences, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, China
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Li XD, Chen NK, Wang BQ, Niu M, Xu M, Miao X, Li XB. Resistive Memory Devices at the Thinnest Limit: Progress and Challenges. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307951. [PMID: 38197585 DOI: 10.1002/adma.202307951] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/07/2023] [Revised: 12/28/2023] [Indexed: 01/11/2024]
Abstract
The Si-based integrated circuits industry has been developing for more than half a century, by focusing on the scaling-down of transistor. However, the miniaturization of transistors will soon reach its physical limits, thereby requiring novel material and device technologies. Resistive memory is a promising candidate for in-memory computing and energy-efficient synaptic devices that can satisfy the computational demands of the future applications. However, poor cycle-to-cycle and device-to-device uniformities hinder its mass production. 2D materials, as a new type of semiconductor, is successfully employed in various micro/nanoelectronic devices and have the potential to drive future innovation in resistive memory technology. This review evaluates the potential of using the thinnest advanced materials, that is, monolayer 2D materials, for memristor or memtransistor applications, including resistive switching behavior and atomic mechanism, high-frequency device performances, and in-memory computing/neuromorphic computing applications. The scaling-down advantages of promising monolayer 2D materials including graphene, transition metal dichalcogenides, and hexagonal boron nitride are presented. Finally, the technical challenges of these atomic devices for practical applications are elaborately discussed. The study of monolayer-2D-material-based resistive memory is expected to play a positive role in the exploration of beyond-Si electronic technologies.
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Affiliation(s)
- Xiao-Dong Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Nian-Ke Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Bai-Qian Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Meng Niu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Ming Xu
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xiangshui Miao
- School of Integrated Circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Xian-Bin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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Zhang Q, Li M, Li L, Geng D, Chen W, Hu W. Recent progress in emerging two-dimensional organic-inorganic van der Waals heterojunctions. Chem Soc Rev 2024; 53:3096-3133. [PMID: 38373059 DOI: 10.1039/d3cs00821e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Two-dimensional (2D) materials have attracted significant attention in recent decades due to their exceptional optoelectronic properties. Among them, to meet the growing demand for multifunctional applications, 2D organic-inorganic van der Waals (vdW) heterojunctions have become increasingly popular in the development of optoelectronic devices. These heterojunctions demonstrate impressive capability to synergistically combine the favourable characteristics of organic and inorganic materials, thereby offering a wide range of advantages. Also, they enable the creation of innovative device structures and introduce novel functionalities in existing 2D materials, avoiding the need for lattice matching in different material systems. Presently, researchers are actively working on improving the performance of devices based on 2D organic-inorganic vdW heterojunctions by focusing on enhancing the quality of 2D materials, precise stacking methods, energy band regulation, and material selection. Therefore, this review presents a thorough examination of the emerging 2D organic-inorganic vdW heterojunctions, including their classification, fabrication, and corresponding devices. Additionally, this review offers profound and comprehensive insight into the challenges in this field to inspire future research directions. It is expected to propel researchers to harness the extraordinary capabilities of 2D organic-inorganic vdW heterojunctions for a wider range of applications by further advancing the understanding of their fundamental properties, expanding the range of available materials, and exploring novel device architectures. The ongoing research and development in this field hold potential to unlock captivating advancements and foster practical applications across diverse industries.
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Affiliation(s)
- Qing Zhang
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Menghan Li
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Lin Li
- College of Chemistry, Tianjin Normal University, Tianjin 300387, China.
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
| | - Dechao Geng
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Beijing National Laboratory for Molecular Sciences, Beijing 100190, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
| | - Wei Chen
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
| | - Wenping Hu
- Key Laboratory of Organic Integrated Circuit, Ministry of Education & Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
- Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin 300192, China
- Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin 300072, China
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Li S, Liao K, Bi Y, Ding K, Sun E, Zhang C, Wang L, Hu F, Xiao M, Wang X. Optical readout of charge carriers stored in a 2D memory cell of monolayer WSe 2. NANOSCALE 2024; 16:3668-3675. [PMID: 38289585 DOI: 10.1039/d3nr04263d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/16/2024]
Abstract
Owing to their superior charge retaining and transport characteristics, 2D transition metal dichalcogenides are investigated for practical applications in various memory-cell structures. Herein, we fabricated a quasi-one-terminal 2D memory cell by partially depositing a WSe2 monolayer on an Au electrode, which can be manipulated to achieve efficient charge injection upon the application or removal of external bias. Furthermore, the amount of charge carriers stored in the memory cell could be optically probed because of its close correlation with the fluorescence efficiency of WSe2, allowing us to achieve an electron retention time of ∼300 s at the cryogenic temperature of 4 K. Accordingly, the simplified device structure and the non-contact optical readout of the stored charge carriers present new research opportunities for 2D memory cells in terms of both fundamental mechanism studies and practical development for integrated nanophotonic devices.
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Affiliation(s)
- Si Li
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Kan Liao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Yanfeng Bi
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Ke Ding
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Encheng Sun
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Chunfeng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Lin Wang
- School of Flexible Electronics (Future Technologies) & Institute of Advanced Materials (IAM), Key Laboratory of Flexible Electronics (KLOFE), and Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), Nanjing 211816, China.
| | - Fengrui Hu
- College of Engineering and Applied Sciences, and MOE Key Laboratory of Intelligent Optical Sensing and Manipulation, Nanjing University, Nanjing 210093, China.
| | - Min Xiao
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
- Department of Physics, University of Arkansas, Fayetteville, Arkansas 72701, USA
| | - Xiaoyong Wang
- National Laboratory of Solid State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
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Wang S, Liu X, Yu H, Liu X, Zhao J, Hou L, Gao Y, Chen Z. Transfer-Free Analog and Digital Flexible Memristors Based on Boron Nitride Films. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:327. [PMID: 38392700 PMCID: PMC10893057 DOI: 10.3390/nano14040327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/05/2024] [Revised: 02/03/2024] [Accepted: 02/05/2024] [Indexed: 02/24/2024]
Abstract
The traditional von Neumann architecture of computers, constrained by the inherent separation of processing and memory units, faces challenges, for instance, memory wall issue. Neuromorphic computing and in-memory computing offer promising paradigms to overcome the limitations of additional data movement and to enhance computational efficiency. In this work, transfer-free flexible memristors based on hexagonal boron nitride films were proposed for analog neuromorphic and digital memcomputing. Analog memristors were prepared; they exhibited synaptic behaviors, including paired-pulse facilitation and long-term potentiation/depression. The resistive switching mechanism of the analog memristors were investigated through transmission electron microscopy. Digital memristors were prepared by altering the electrode materials, and they exhibited reliable device performance, including a large on/off ratio (up to 106), reproducible switching endurance (>100 cycles), non-volatile characteristic (>60 min), and effective operating under bending conditions (>100 times).
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Affiliation(s)
- Sibo Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiuhuan Liu
- College of Communication Engineering, Jilin University, Changchun 130012, China
| | - Han Yu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiaohang Liu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Jihong Zhao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Lixin Hou
- College of Information Technology, Jilin Agricultural University, Changchun 130118, China
| | - Yanjun Gao
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Zhanguo Chen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
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6
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Bach TPA, Cho S, Kim H, Nguyen DA, Im H. 2D van der Waals Heterostructure with Tellurene Floating-Gate for Wide Range and Multi-Bit Optoelectronic Memory. ACS NANO 2024; 18:4131-4139. [PMID: 38206068 DOI: 10.1021/acsnano.3c08567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/12/2024]
Abstract
Intensive research on optoelectronic memory (OEM) devices based on two-dimensional (2D) van der Waals heterostructures (vdWhs) is being conducted due to their distinctive advantages for electrical-optical writing and multilevel storage. These features make OEM a promising candidate for the logic of reconfigurable operations. However, the realization of nonvolatile OEM with broadband absorption (from visible to infrared) and a high switching ratio remains challenging. Herein, we report a nonvolatile OEM based on a heterostructure consisting of rhenium disulfide (ReS2), hexagonal boron nitride (hBN) and tellurene (2D Te). The 2D Te-based floating-gate (FG) device exhibits excellent performance metrics, including a high switching on/off ratio (∼106), significant endurance (>1000 cycles) and impressive retention (>104 s). In addition, the narrow band gap of 2D Te endows the device with broadband optical programmability from the visible to near-infrared regions at room temperature. Moreover, by applying different gate voltages, light wavelengths, and laser powers, multiple bits can be successfully generated. Additionally, the device is specifically designed to enable reconfigurable inverter logic circuits (including AND and OR gates) through controlled electrical and optical inputs. These significant findings demonstrate that the 2D vdWhs with a 2D Te FG are a valuable approach in the development of high-performance OEM devices.
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Affiliation(s)
- Thi Phuong Anh Bach
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Sangeun Cho
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Republic of Korea
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7
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Wang Y, Han B, Mayor M, Samorì P. Opto-Electrochemical Synaptic Memory in Supramolecularly Engineered Janus 2D MoS 2. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307359. [PMID: 37903551 DOI: 10.1002/adma.202307359] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 10/25/2023] [Indexed: 11/01/2023]
Abstract
Artificial synapses combining multiple yet independent signal processing strategies in a single device are key enabler to achieve high-density of integration, energy efficiency, and fast data manipulation in brain-like computing. By taming functional complexity, the use of hybrids comprising multiple materials as active components in synaptic devices represents a powerful route to encode both short-term potentiation (STP) and long-term potentiation (LTP) in synaptic circuitries. To meet such a grand challenge, herein a novel Janus 2D material is developed by dressing asymmetrically the two surfaces of 2D molybdenum disulfide (MoS2 ) with an electrochemically-switchable ferrocene (Fc)/ ferrocenium (Fc+ ) redox couple and an optically-responsive photochromic azobenzene (Azo). Upon varying the magnitude of the electrochemical stimulus, it is possible to steer the transition between STP and LTP, thereby either triggering electrochemical doping of Fc/Fc+ pair on MoS2 or controlling an adsorption/desorption process of such redox species on MoS2 . In addition, a lower magnitude LTP is recorded by activating the photoisomerization of azobenzene chemisorbed molecules and therefore modulating the dipole-induced doping of the 2D semiconductor. Significantly, the interplay of electrochemical and optical stimuli makes it possible to construct artificial synapses where LTP can be boosted to 4-bit (16 memory states) while simultaneously functioning as STP.
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Affiliation(s)
- Ye Wang
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Bin Han
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
| | - Marcel Mayor
- Department of Chemistry, University of Basel, St. Johannsring 19, Basel, 4056, Switzerland
- Karlsruhe Institute of Technology KIT, Institute for Nanotechnology, P.O. Box 3640, 76021, Karlsruhe, Germany
| | - Paolo Samorì
- University of Strasbourg, CNRS, ISIS UMR 7006, 8 Alleé Gaspard Monge, Strasbourg, F-67000, France
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Liu Q, Wang X, Yu J, Wang J. Graphyne and graphdiyne nanoribbons: from their structures and properties to potential applications. Phys Chem Chem Phys 2024; 26:1541-1563. [PMID: 38165768 DOI: 10.1039/d3cp04393b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Graphyne (GY) and graphdiyne (GDY) have properties including unique sp- and sp2-hybrid carbon atomic structures, natural non-zero band gaps, and highly conjugated π electrons. GY and GDY have good application prospects in many fields, including catalysis, solar cells, sensors, and modulators. Under the influence of the boundary effect and quantum size effect, quasi-one-dimensional graphyne nanoribbons (GYNRs) and graphdiyne nanoribbons (GDYNRs) show novel physical properties. The various structures available give GYNRs and GDYNRs greater band structure and electronic properties, and their excellent physical and chemical properties differ from those of two-dimensional GY and GDY. However, the development of GYNRs and GDYNRs still faces problems, including issues with accurate synthesis, advanced structural characterization, the structure-performance correlation of materials, and potential applications. In this review, the structures and physical properties of quasi-one-dimensional GYNRs and GDYNRs are reviewed, their advantages and disadvantages are summarized, and their potential applications are highlighted. This review provides a meaningful basis and research foundation for the design and development of high-performance materials and devices based on GYNRs and GDYNRs in the field of energy.
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Affiliation(s)
- Qiaohan Liu
- College of Science, Liaoning Petrochemical University, Fushun 113001, P. R. China.
| | - Xiaorong Wang
- School of petrochemical engineering, Liaoning Petrochemical University, Fushun 113001, P. R. China
| | - Jing Yu
- College of Science, Liaoning Petrochemical University, Fushun 113001, P. R. China.
| | - Jingang Wang
- College of Science, Liaoning Petrochemical University, Fushun 113001, P. R. China.
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Lee J, Yang K, Kwon JY, Kim JE, Han DI, Lee DH, Yoon JH, Park MH. Role of oxygen vacancies in ferroelectric or resistive switching hafnium oxide. NANO CONVERGENCE 2023; 10:55. [PMID: 38038784 PMCID: PMC10692067 DOI: 10.1186/s40580-023-00403-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 11/08/2023] [Indexed: 12/02/2023]
Abstract
HfO2 shows promise for emerging ferroelectric and resistive switching (RS) memory devices owing to its excellent electrical properties and compatibility with complementary metal oxide semiconductor technology based on mature fabrication processes such as atomic layer deposition. Oxygen vacancy (Vo), which is the most frequently observed intrinsic defect in HfO2-based films, determines the physical/electrical properties and device performance. Vo influences the polymorphism and the resulting ferroelectric properties of HfO2. Moreover, the switching speed and endurance of ferroelectric memories are strongly correlated to the Vo concentration and redistribution. They also strongly influence the device-to-device and cycle-to-cycle variability of integrated circuits based on ferroelectric memories. The concentration, migration, and agglomeration of Vo form the main mechanism behind the RS behavior observed in HfO2, suggesting that the device performance and reliability in terms of the operating voltage, switching speed, on/off ratio, analog conductance modulation, endurance, and retention are sensitive to Vo. Therefore, the mechanism of Vo formation and its effects on the chemical, physical, and electrical properties in ferroelectric and RS HfO2 should be understood. This study comprehensively reviews the literature on Vo in HfO2 from the formation and influencing mechanism to material properties and device performance. This review contributes to the synergetic advances of current knowledge and technology in emerging HfO2-based semiconductor devices.
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Affiliation(s)
- Jaewook Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Kun Yang
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Ju Young Kwon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Ji Eun Kim
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea
| | - Dong In Han
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Dong Hyun Lee
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research Center, Korea Institute of Science and Technology (KIST), Seoul, 02791, Republic of Korea.
| | - Min Hyuk Park
- Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
- Research Institute of Advanced Materials, Seoul National University, Gwanak-Ro 1, Gwanak-Gu, Seoul, 08826, Republic of Korea.
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Zhang C, Ning J, Wang D, Zhang J, Hao Y. A review on advanced band-structure engineering with dynamic control for nonvolatile memory based 2D transistors. NANOTECHNOLOGY 2023; 35:042001. [PMID: 37524059 DOI: 10.1088/1361-6528/acebf4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/28/2022] [Accepted: 07/31/2023] [Indexed: 08/02/2023]
Abstract
With advancements in information technology, an enormous amount of data is being generated that must be quickly accessible. However, conventional Si memory cells are approaching their physical limits and will be unable to meet the requirements of intense applications in the future. Notably, 2D atomically thin materials have demonstrated multiple novel physical and chemical properties that can be used to investigate next-generation electronic devices and breakthrough physical limits to continue Moore's law. Band structure is an important semiconductor parameter that determines their electrical and optical properties. In particular, 2D materials have highly tunable bandgaps and Fermi levels that can be achieved through band structure engineering methods such as heterostructure, substrate engineering, chemical doping, intercalation, and electrostatic doping. In particular, dynamic control of band structure engineering can be used in recent advancements in 2D devices to realize nonvolatile storage performance. This study examines recent advancements in 2D memory devices that utilize band structure engineering. The operational mechanisms and memory characteristics are described for each band structure engineering method. Band structure engineering provides a platform for developing new structures and realizing superior performance with respect to nonvolatile memory.
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Affiliation(s)
- Chi Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Jing Ning
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Dong Wang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
- Xidian-Wuhu Research Institute, Wuhu 241000, People's Republic of China
| | - Jincheng Zhang
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
| | - Yue Hao
- The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an 710071, People's Republic of China
- Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, People's Republic of China
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11
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Ding G, Zhao J, Zhou K, Zheng Q, Han ST, Peng X, Zhou Y. Porous crystalline materials for memories and neuromorphic computing systems. Chem Soc Rev 2023; 52:7071-7136. [PMID: 37755573 DOI: 10.1039/d3cs00259d] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Porous crystalline materials usually include metal-organic frameworks (MOFs), covalent organic frameworks (COFs), hydrogen-bonded organic frameworks (HOFs) and zeolites, which exhibit exceptional porosity and structural/composition designability, promoting the increasing attention in memory and neuromorphic computing systems in the last decade. From both the perspective of materials and devices, it is crucial to provide a comprehensive and timely summary of the applications of porous crystalline materials in memory and neuromorphic computing systems to guide future research endeavors. Moreover, the utilization of porous crystalline materials in electronics necessitates a shift from powder synthesis to high-quality film preparation to ensure high device performance. This review highlights the strategies for preparing porous crystalline materials films and discusses their advancements in memory and neuromorphic electronics. It also provides a detailed comparative analysis and presents the existing challenges and future research directions, which can attract the experts from various fields (e.g., materials scientists, chemists, and engineers) with the aim of promoting the applications of porous crystalline materials in memory and neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - JiYu Zhao
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Qi Zheng
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, China
| | - Xiaojun Peng
- State Key Laboratory of Fine Chemicals, Frontiers Science Center for Smart Materials, Dalian University of Technology, Dalian 116024, China
- State Key Laboratory of Fine Chemicals, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, China.
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12
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Wang W, Zhang Y, Li Z, Qian L. Controllable Friction on Graphene via Adjustable Interfacial Contact Quality. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303013. [PMID: 37661586 PMCID: PMC10602576 DOI: 10.1002/advs.202303013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/11/2023] [Revised: 07/14/2023] [Indexed: 09/05/2023]
Abstract
Despite the numerous unique properties revealed through tribology research on graphene, the development of applications that utilize its rich tribological properties remains a long-sought goal. In this article, a novel approach for reversible patterning of graphene's frictional properties using out-of-plane mechanical tapping is presented. The friction force between the atomic force microscopy (AFM) tip and the graphene film is increased by up to a factor of two, which can be attributed to variations in the interfacial binding strength between the graphene and substrate through the tapping process. The reversible and repeatable frictional properties of graphene make it a promising material for information storage applications with a high storage capacity of ≈1600 GB inch-2 , allowing for direct writing and erasing of information, akin to a blackboard. These findings highlight the potential for friction tuning in lamellar materials and emphasize the significance of understanding nanoscale friction on graphene surfaces.
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Affiliation(s)
- Wen Wang
- School of Mechanical EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Yu Zhang
- School of Mechanical EngineeringSouthwest Jiaotong UniversityChengdu610031China
| | - Zhihong Li
- Key Laboratory of Microelectronic Devices and Circuits (MOE)Institute of MicroelectronicsPeking UniversityBeijing100871China
| | - Linmao Qian
- School of Mechanical EngineeringSouthwest Jiaotong UniversityChengdu610031China
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13
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Kim J, Im C, Lee C, Hwang J, Jang H, Lee JH, Jin M, Lee H, Kim J, Sung J, Kim YS, Lee E. Solvent-assisted sulfur vacancy engineering method in MoS 2 for a neuromorphic synaptic memristor. NANOSCALE HORIZONS 2023; 8:1417-1427. [PMID: 37538027 DOI: 10.1039/d3nh00201b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/05/2023]
Abstract
Recently, two-dimensional transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have attracted great attention due to their unique properties. To modulate the electronic properties and structure of TMDs, it is crucial to precisely control chalcogenide vacancies and several methods have already been suggested. However, they have several limitations such as plasma damage by ion bombardment. Herein, we introduced a novel solvent-assisted vacancy engineering (SAVE) method to modulate sulfur vacancies in MoS2. Considering polarity and the Hansen solubility parameter (HSP), three solvents were selected. Sulfur vacancies can be modulated by immersing MoS2 in each solvent, supported by X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy analyses. The SAVE method can further expand its application in memory devices representing memristive performance and synaptic behaviors. We represented the charge transport mechanism of sulfur vacancy migration in MoS2. The non-destructive, scalable, and novel SAVE method controlling sulfur vacancies is expected to be a guideline for constructing a vacancy engineering system of TMDs.
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Affiliation(s)
- Jiyeon Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
| | - Changik Im
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Chan Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Jinwoo Hwang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Hyoik Jang
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Jae Hak Lee
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Samsung Display Company, Ltd., 1 Samsung-ro, Giheung-gu, Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Minho Jin
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Haeyeon Lee
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
| | - Junyoung Kim
- Inspection Business Unit (IBU), Onto Innovation, 4900 W 78th St, Bloomington, MN 55435, USA
| | - Junho Sung
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
| | - Youn Sang Kim
- Department of Applied Bioengineering, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul 08826, Republic of Korea.
- Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Department of Chemical and Biological Engineering, College of Engineering, Seoul National University, Gwanak-ro 1, Gwanak-gu, Seoul, 08826, Republic of Korea
- Advanced Institutes of Convergence Technology, Gwanggyo-ro 145, Yeongtong-gu, Suwon, 16229, Republic of Korea
| | - Eunho Lee
- Department of Chemical Engineering, Kumoh National Institute of Technology, 61 Daehak-ro, Gumi-si, Gyeongsangbuk-do, 39177, Republic of Korea.
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14
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Xia Y, Zha J, Huang H, Wang H, Yang P, Zheng L, Zhang Z, Yang Z, Chen Y, Chan HP, Ho JC, Tan C. Uncovering the Role of Crystal Phase in Determining Nonvolatile Flash Memory Device Performance Fabricated from MoTe 2-Based 2D van der Waals Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2023; 15:35196-35205. [PMID: 37459597 DOI: 10.1021/acsami.3c06316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/28/2023]
Abstract
Although the crystal phase of two-dimensional (2D) transition metal dichalcogenides (TMDs) has been proven to play an essential role in fabricating high-performance electronic devices in the past decade, its effect on the performance of 2D material-based flash memory devices still remains unclear. Here, we report the exploration of the effect of MoTe2 in different phases as the charge-trapping layer on the performance of 2D van der Waals (vdW) heterostructure-based flash memory devices, where a metallic 1T'-MoTe2 or semiconducting 2H-MoTe2 nanoflake is used as the floating gate. By conducting comprehensive measurements on the two kinds of vdW heterostructure-based devices, the memory device based on MoS2/h-BN/1T'-MoTe2 presents much better performance, including a larger memory window, faster switching speed (100 ns), and higher extinction ratio (107), than that of the device based on the MoS2/h-BN/2H-MoTe2 heterostructure. Moreover, the device based on the MoS2/h-BN/1T'-MoTe2 heterostructure also shows a long cycle (>1200 cycles) and retention (>3000 s) stability. Our study clearly demonstrates that the crystal phase of 2D TMDs has a significant impact on the performance of nonvolatile flash memory devices based on 2D vdW heterostructures, which paves the way for the fabrication of future high-performance memory devices based on 2D materials.
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Affiliation(s)
- Yunpeng Xia
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Jiajia Zha
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Haoxin Huang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Huide Wang
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Peng Yang
- College of Integrated Circuits and Optoelectronic Chips, Shenzhen Technology University, Shenzhen 518118, China
| | - Long Zheng
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Mechanical and Aerospace Engineering, Hong Kong University of Science and Technology, Kowloon 999077, Hong Kong SAR, China
| | - Ye Chen
- Department of Chemistry, The Chinese University of Hong Kong, Shatin 999077, Hong Kong SAR, China
| | - Hau Ping Chan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Johnny C Ho
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
| | - Chaoliang Tan
- Department of Electrical Engineering, City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Chemistry and Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Kowloon 999077, Hong Kong SAR, China
- Department of Electrical and Electronic Engineering, The University of Hong Kong, Pokfulam 999077, Hong Kong SAR, China
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15
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Wang H, Wen Y, Zeng H, Xiong Z, Tu Y, Zhu H, Cheng R, Yin L, Jiang J, Zhai B, Liu C, Shan C, He J. 2D Ferroic Materials for Nonvolatile Memory Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305044. [PMID: 37486859 DOI: 10.1002/adma.202305044] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/28/2023] [Revised: 07/21/2023] [Indexed: 07/26/2023]
Abstract
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices.
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Affiliation(s)
- Hao Wang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hui Zeng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ziren Xiong
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Yangyuan Tu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Hao Zhu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Lei Yin
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics, Zhengzhou University, Zhengzhou, 450052, China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-Structures of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan, 430072, China
- Hubei Luojia Laboratory, Wuhan, 430079, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100190, China
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16
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Li K, Ji Q, Liang H, Hua Z, Hang X, Zeng L, Han H. Biomedical application of 2D nanomaterials in neuroscience. J Nanobiotechnology 2023; 21:181. [PMID: 37280681 DOI: 10.1186/s12951-023-01920-4] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/24/2023] [Accepted: 05/05/2023] [Indexed: 06/08/2023] Open
Abstract
Two-dimensional (2D) nanomaterials, such as graphene, black phosphorus and transition metal dichalcogenides, have attracted increasing attention in biology and biomedicine. Their high mechanical stiffness, excellent electrical conductivity, optical transparency, and biocompatibility have led to rapid advances. Neuroscience is a complex field with many challenges, such as nervous system is difficult to repair and regenerate, as well as the early diagnosis and treatment of neurological diseases are also challenged. This review mainly focuses on the application of 2D nanomaterials in neuroscience. Firstly, we introduced various types of 2D nanomaterials. Secondly, due to the repairment and regeneration of nerve is an important problem in the field of neuroscience, we summarized the studies of 2D nanomaterials applied in neural repairment and regeneration based on their unique physicochemical properties and excellent biocompatibility. We also discussed the potential of 2D nanomaterial-based synaptic devices to mimic connections among neurons in the human brain due to their low-power switching capabilities and high mobility of charge carriers. In addition, we also reviewed the potential clinical application of various 2D nanomaterials in diagnosing and treating neurodegenerative diseases, neurological system disorders, as well as glioma. Finally, we discussed the challenge and future directions of 2D nanomaterials in neuroscience.
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Affiliation(s)
- Kangchen Li
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Qianting Ji
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Huanwei Liang
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Zixuan Hua
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Xinyi Hang
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China
| | - Linghui Zeng
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China.
| | - Haijun Han
- School of Medicine, Institute of Brain and Cognitive Science, Key Laboratory of Novel Targets and Drug Study for Neural Repair of Zhejiang Province, School of Medicine, Hangzhou City University, Hangzhou, 310015, Zhejiang, China.
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17
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Zhang L, Wang N, Li Y. Design, synthesis, and application of some two-dimensional materials. Chem Sci 2023; 14:5266-5290. [PMID: 37234883 PMCID: PMC10208047 DOI: 10.1039/d3sc00487b] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/29/2023] [Accepted: 04/18/2023] [Indexed: 05/28/2023] Open
Abstract
Two-dimensional (2D) materials are widely used as key components in the fields of energy conversion and storage, optoelectronics, catalysis, biomedicine, etc. To meet the practical needs, molecular structure design and aggregation process optimization have been systematically carried out. The intrinsic correlation between preparation methods and the characteristic properties is investigated. This review summarizes the recent research achievements of 2D materials in the aspect of molecular structure modification, aggregation regulation, characteristic properties, and device applications. The design strategies to fabricate functional 2D materials starting from precursor molecules are introduced in detail referring to organic synthetic chemistry and self-assembly technology. It provides important research ideas for the design and synthesis of related materials.
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Affiliation(s)
- Luwei Zhang
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
| | - Ning Wang
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
| | - Yuliang Li
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, School of Chemistry and Chemical Engineering, Shandong University 27 Shanda Nanlu Jinan 250100 P. R. China
- Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences Zhongguancun North First Street 2 Beijing 100190 P. R. China
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18
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Yang AJ, Wang SX, Xu J, Loh XJ, Zhu Q, Wang XR. Two-Dimensional Layered Materials Meet Perovskite Oxides: A Combination for High-Performance Electronic Devices. ACS NANO 2023. [PMID: 37171107 DOI: 10.1021/acsnano.3c00429] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
As the Si-based transistors scale down to atomic dimensions, the basic principle of current electronics, which heavily relies on the tunable charge degree of freedom, faces increasing challenges to meet the future requirements of speed, switching energy, heat dissipation, and packing density as well as functionalities. Heterogeneous integration, where dissimilar layers of materials and functionalities are unrestrictedly stacked at an atomic scale, is appealing for next-generation electronics, such as multifunctional, neuromorphic, spintronic, and ultralow-power devices, because it unlocks technologically useful interfaces of distinct functionalities. Recently, the combination of functional perovskite oxides and two-dimensional layered materials (2DLMs) led to unexpected functionalities and enhanced device performance. In this paper, we review the recent progress of the heterogeneous integration of perovskite oxides and 2DLMs from the perspectives of fabrication and interfacial properties, electronic applications, and challenges as well as outlooks. In particular, we focus on three types of attractive applications, namely field-effect transistors, memory, and neuromorphic electronics. The van der Waals integration approach is extendible to other oxides and 2DLMs, leading to almost unlimited combinations of oxides and 2DLMs and contributing to future high-performance electronic and spintronic devices.
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Affiliation(s)
- Allen Jian Yang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Su-Xi Wang
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Xian Jun Loh
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE), Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Innovis, #08-03, Singapore 13863, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), Agency for Science, Technology and Research (A*STAR), 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
- School of Chemistry, Chemical Engineering and Biotechnology, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
| | - Xiao Renshaw Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave, Singapore 639798, Singapore
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Aldana S, Jadwiszczak J, Zhang H. On the switching mechanism and optimisation of ion irradiation enabled 2D MoS 2 memristors. NANOSCALE 2023; 15:6408-6416. [PMID: 36929381 DOI: 10.1039/d2nr06810a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Memristors are prominent passive circuit elements with promising futures for energy-efficient in-memory processing and revolutionary neuromorphic computation. State-of-the-art memristors based on two-dimensional (2D) materials exhibit enhanced tunability, scalability and electrical reliability. However, the fundamental of the switching is yet to be clarified before they can meet industrial standards in terms of endurance, variability, resistance ratio, and scalability. This new physical simulator based on the kinetic Monte Carlo (kMC) algorithm reproduces the defect migration process in 2D materials and sheds light on the operation of 2D memristors. The present work employs the simulator to study a two-dimensional 2H-MoS2 planar resistive switching (RS) device with an asymmetric defect concentration introduced by ion irradiation. The simulations unveil the non-filamentary RS process and propose routes to optimize the device's performance. For instance, the resistance ratio can be increased by 53% by controlling the concentration and distribution of defects, while the variability can be reduced by 55% by increasing 5-fold the device size from 10 to 50 nm. Our simulator also explains the trade-offs between the resistance ratio and variability, resistance ratio and scalability, and variability and scalability. Overall, the simulator may enable an understanding and optimization of devices to expedite cutting-edge applications.
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Affiliation(s)
- Samuel Aldana
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Jakub Jadwiszczak
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
| | - Hongzhou Zhang
- Centre for Research on Adaptive Nanostructures and Nanodevices (CRANN), Advanced Materials and Bioengineering Research (AMBER) Research Centers, School of Physics, Trinity College Dublin, Dublin, D02 PN40, Ireland.
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20
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Combination of Polymer Gate Dielectric and Two-Dimensional Semiconductor for Emerging Field-Effect Transistors. Polymers (Basel) 2023; 15:polym15061395. [PMID: 36987175 PMCID: PMC10051946 DOI: 10.3390/polym15061395] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 03/04/2023] [Accepted: 03/08/2023] [Indexed: 03/16/2023] Open
Abstract
Two-dimensional (2D) materials are considered attractive semiconducting layers for emerging field-effect transistors owing to their unique electronic and optoelectronic properties. Polymers have been utilized in combination with 2D semiconductors as gate dielectric layers in field-effect transistors (FETs). Despite their distinctive advantages, the applicability of polymer gate dielectric materials for 2D semiconductor FETs has rarely been discussed in a comprehensive manner. Therefore, this paper reviews recent progress relating to 2D semiconductor FETs based on a wide range of polymeric gate dielectric materials, including (1) solution-based polymer dielectrics, (2) vacuum-deposited polymer dielectrics, (3) ferroelectric polymers, and (4) ion gels. Exploiting appropriate materials and corresponding processes, polymer gate dielectrics have enhanced the performance of 2D semiconductor FETs and enabled the development of versatile device structures in energy-efficient ways. Furthermore, FET-based functional electronic devices, such as flash memory devices, photodetectors, ferroelectric memory devices, and flexible electronics, are highlighted in this review. This paper also outlines challenges and opportunities in order to help develop high-performance FETs based on 2D semiconductors and polymer gate dielectrics and realize their practical applications.
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21
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Lanza M, Hui F, Wen C, Ferrari AC. Resistive Switching Crossbar Arrays Based on Layered Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205402. [PMID: 36094019 DOI: 10.1002/adma.202205402] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2022] [Revised: 08/25/2022] [Indexed: 06/15/2023]
Abstract
Resistive switching (RS) devices are metal/insulator/metal cells that can change their electrical resistance when electrical stimuli are applied between the electrodes, and they can be used to store and compute data. Planar crossbar arrays of RS devices can offer a high integration density (>108 devices mm- 2 ) and this can be further enhanced by stacking them three-dimensionally. The advantage of using layered materials (LMs) in RS devices compared to traditional phase-change materials and metal oxides is that their electrical properties can be adjusted with a higher precision. Here, the key figures-of-merit and procedures to implement LM-based RS devices are defined. LM-based RS devices fabricated using methods compatible with industry are identified and discussed. The focus is on small devices (size < 9 µm2 ) arranged in crossbar structures, since larger devices may be affected by artifacts, such as grain boundaries and flake junctions. How to enhance device performance, so to accelerate the development of this technology, is also discussed.
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Affiliation(s)
- Mario Lanza
- Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Fei Hui
- School of Materials Science and Engineering, The Key Laboratory of Material, Processing and Mold of the Ministry of Education, Henan Key Laboratory of Advanced, Nylon Materials and Application, Zhengzhou University, Zhengzhou, 450001, P. R. China
| | - Chao Wen
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
| | - Andrea C Ferrari
- Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK
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22
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Liu L, Geng B, Ji W, Wu L, Lei S, Hu W. A Highly Crystalline Single Layer 2D Polymer for Low Variability and Excellent Scalability Molecular Memristors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208377. [PMID: 36398525 DOI: 10.1002/adma.202208377] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Revised: 11/07/2022] [Indexed: 06/16/2023]
Abstract
Large-scale growth of highly crystalline single layer 2D polymers (SL-2DPs) and their subsequent integration into memristors is key to advancing the development of high-density data storage devices. However, leakage problems resulting from the porous structure of 2DPs continue to make such advances extremely challenging. Herein, we overcome this issue by incorporating long alkoxy chains into key molecular building blocks to obtain a highly crystalline 2DP, as visualized by scanning tunneling microscopy, and prevent metal permeation in the subsequent device fabrication process. SL-2DP memristors constructed via direct evaporation of the top electrodes exhibit low variability (σVset = 0.14) due to the single-monomer-thick feature together with the high regular structure and coordination ability which minimizes the stochastic spatial distribution of conductive filaments (CFs) in both vertical and lateral dimensions. The variability is further decreased to 0.04 by confining the formation and fracture of CFs to the interface through the utilization of bilayer junctions. Using peak force tunneling atomic force microscopy, the nanometer scalability (< 50 nm2 ) and low power consumption of these molecular memristor devices are demonstrated.
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Affiliation(s)
- Lei Liu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Bowen Geng
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Wenyan Ji
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Lingli Wu
- Medical College, Northwest Minzu University, Lanzhou, 730000, China
| | - Shengbin Lei
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Science, Department of Chemistry, School of Science & Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin University, Tianjin, 300072, P. R. China
- Haihe Laboratory of Sustainable Chemical Transformations, Tianjin, 300192, China
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23
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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24
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Moon G, Min SY, Han C, Lee SH, Ahn H, Seo SY, Ding F, Kim S, Jo MH. Atomically Thin Synapse Networks on Van Der Waals Photo-Memtransistors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203481. [PMID: 35953281 DOI: 10.1002/adma.202203481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/18/2022] [Revised: 07/30/2022] [Indexed: 06/15/2023]
Abstract
A new type of atomically thin synaptic network on van der Waals (vdW) heterostructures is reported, where each ultrasmall cell (≈2 nm thick) built with trilayer WS2 semiconductor acts as a gate-tunable photoactive synapse, i.e., a photo-memtransistor. A train of UV pulses onto the WS2 memristor generates dopants in atomic-level precision by direct light-lattice interactions, which, along with the gate tunability, leads to the accurate modulation of the channel conductance for potentiation and depression of the synaptic cells. Such synaptic dynamics can be explained by a parallel atomistic resistor network model. In addition, it is shown that such a device scheme can generally be realized in other 2D vdW semiconductors, such as MoS2 , MoSe2 , MoTe2 , and WSe2 . Demonstration of these atomically thin photo-memtransistor arrays, where the synaptic weights can be tuned for the atomistic defect density, provides implications for a new type of artificial neural networks for parallel matrix computations with an ultrahigh integration density.
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Affiliation(s)
- Gunho Moon
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seok Young Min
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Cheolhee Han
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Suk-Ho Lee
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Heonsu Ahn
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seung-Young Seo
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Feng Ding
- Center for Multidimensional Carbon Materials, Institute for Basic Science (IBS), Ulsan, 44919, Republic of Korea
| | - Seyoung Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Moon-Ho Jo
- Center for Van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, 37673, Republic of Korea
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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25
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Lei Y, Zhang T, Lin YC, Granzier-Nakajima T, Bepete G, Kowalczyk DA, Lin Z, Zhou D, Schranghamer TF, Dodda A, Sebastian A, Chen Y, Liu Y, Pourtois G, Kempa TJ, Schuler B, Edmonds MT, Quek SY, Wurstbauer U, Wu SM, Glavin NR, Das S, Dash SP, Redwing JM, Robinson JA, Terrones M. Graphene and Beyond: Recent Advances in Two-Dimensional Materials Synthesis, Properties, and Devices. ACS NANOSCIENCE AU 2022; 2:450-485. [PMID: 36573124 PMCID: PMC9782807 DOI: 10.1021/acsnanoscienceau.2c00017] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 12/30/2022]
Abstract
Since the isolation of graphene in 2004, two-dimensional (2D) materials research has rapidly evolved into an entire subdiscipline in the physical sciences with a wide range of emergent applications. The unique 2D structure offers an open canvas to tailor and functionalize 2D materials through layer number, defects, morphology, moiré pattern, strain, and other control knobs. Through this review, we aim to highlight the most recent discoveries in the following topics: theory-guided synthesis for enhanced control of 2D morphologies, quality, yield, as well as insights toward novel 2D materials; defect engineering to control and understand the role of various defects, including in situ and ex situ methods; and properties and applications that are related to moiré engineering, strain engineering, and artificial intelligence. Finally, we also provide our perspective on the challenges and opportunities in this fascinating field.
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Affiliation(s)
- Yu Lei
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Institute
of Materials Research, Tsinghua Shenzhen
International Graduate School, Shenzhen, Guangdong 518055, China,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tianyi Zhang
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Tomotaroh Granzier-Nakajima
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - George Bepete
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Dorota A. Kowalczyk
- Department
of Solid State Physics, Faculty of Physics and Applied Informatics, University of Lodz, Pomorska 149/153, Lodz 90-236, Poland
| | - Zhong Lin
- Department
of Physics, University of Washington, Seattle, Washington 98195, United States
| | - Da Zhou
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Thomas F. Schranghamer
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Akhil Dodda
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Amritanand Sebastian
- Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Yifeng Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Yuanyue Liu
- Texas
Materials Institute and Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712, United States
| | | | - Thomas J. Kempa
- Department
of Chemistry, Johns Hopkins University, Baltimore, Maryland 21287, United States
| | - Bruno Schuler
- nanotech@surfaces
Laboratory, Empa − Swiss Federal
Laboratories for Materials Science and Technology, Dübendorf 8600, Switzerland
| | - Mark T. Edmonds
- School
of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia
| | - Su Ying Quek
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive, Singapore 117456, Singapore
| | - Ursula Wurstbauer
- Institute
of Physics, University of Münster, Wilhelm-Klemm-Str. 10, Münster 48149, Germany
| | - Stephen M. Wu
- Department
of Electrical and Computer Engineering & Department of Physics
and Astronomy, University of Rochester, Rochester, New York 14627, United States
| | - Nicholas R. Glavin
- Air
Force
Research Laboratory, Materials and Manufacturing Directorate, Wright-Patterson AFB, Dayton, Ohio 45433, United States
| | - Saptarshi Das
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Engineering Science and Mechanics, Pennsylvania
State University, University Park, Pennsylvania 16802, United States
| | - Saroj Prasad Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Göteborg SE-412 96, Sweden
| | - Joan M. Redwing
- Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Joshua A. Robinson
- Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,
| | - Mauricio Terrones
- Department
of Physics, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for Atomically Thin Multifunctional Coatings, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Center
for 2-Dimensional and Layered Materials, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Material Science and Engineering, The
Pennsylvania State University, University Park, Pennsylvania 16802, United States,Department
of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States,Research
Initiative for Supra-Materials and Global Aqua Innovation Center, Shinshu University, 4-17-1Wakasato, Nagano 380-8553, Japan,
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26
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Xue F, Zhang C, Ma Y, Wen Y, He X, Yu B, Zhang X. Integrated Memory Devices Based on 2D Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201880. [PMID: 35557021 DOI: 10.1002/adma.202201880] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2022] [Revised: 05/07/2022] [Indexed: 06/15/2023]
Abstract
With the advent of the Internet of Things and big data, massive data must be rapidly processed and stored within a short timeframe. This imposes stringent requirements on memory hardware implementation in terms of operation speed, energy consumption, and integration density. To fulfill these demands, 2D materials, which are excellent electronic building blocks, provide numerous possibilities for developing advanced memory device arrays with high performance, smart computing architectures, and desirable downscaling. Over the past few years, 2D-material-based memory-device arrays with different working mechanisms, including defects, filaments, charges, ferroelectricity, and spins, have been increasingly developed. These arrays can be used to implement brain-inspired computing or sensing with extraordinary performance, architectures, and functionalities. Here, recent research into integrated, state-of-the-art memory devices made from 2D materials, as well as their implications for brain-inspired computing are surveyed. The existing challenges at the array level are discussed, and the scope for future research is presented.
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Affiliation(s)
- Fei Xue
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Chenhui Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yinchang Ma
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Yan Wen
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xin He
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Bin Yu
- ZJU-Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, 310020, P. R. China
- School of Micro-Nano Electronics, Zhejiang University, Hangzhou, 311200, P. R. China
| | - Xixiang Zhang
- Physical Science and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
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27
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Xiang L, Wang Y, Xia F, Liu F, He D, Long G, Zeng X, Liang X, Jin C, Wang Y, Pan A, Peng LM, Hu Y. An epidermal electronic system for physiological information acquisition, processing, and storage with an integrated flash memory array. SCIENCE ADVANCES 2022; 8:eabp8075. [PMID: 35977018 PMCID: PMC9385141 DOI: 10.1126/sciadv.abp8075] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Epidermal electronic systems that simultaneously provide physiological information acquisition, processing, and storage are in high demand for health care/clinical applications. However, these system-level demonstrations using flexible devices are still challenging because of obstacles in device performance, functional module construction, or integration scale. Here, on the basis of carbon nanotubes, we present an epidermal system that incorporates flexible sensors, sensor interface circuits, and an integrated flash memory array to collect physiological information from the human body surface; amplify weak biosignals by high-performance differential amplifiers (voltage gain of 27 decibels, common-mode rejection ratio of >43 decibels, and gain bandwidth product of >22 kilohertz); and store the processed information in the memory array with performance on par with industrial standards (retention time of 108 seconds, program/erase voltages of ±2 volts, and endurance of 106 cycles). The results shed light on the great application potential of epidermal electronic systems in personalized diagnostic and physiological monitoring.
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Affiliation(s)
- Li Xiang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Yuru Wang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Fan Xia
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Fang Liu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Daliang He
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Guanhua Long
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xiangwen Zeng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Xuelei Liang
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
| | - Chuanhong Jin
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Yuwei Wang
- College of Electrical and Information Engineering, Hunan University, Changsha 410082, China
| | - Anlian Pan
- College of Materials Science and Engineering, Hunan University, Changsha 410082, China
| | - Lian-Mao Peng
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Jihua Laboratory, Foshan, Guangdong 528200, China
| | - Youfan Hu
- Key Laboratory for the Physics and Chemistry of Nanodevices, School of Electronics and Center for Carbon-Based Electronics, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Corresponding author.
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28
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Li Y, Zhang ZC, Li J, Chen XD, Kong Y, Wang FD, Zhang GX, Lu TB, Zhang J. Low-voltage ultrafast nonvolatile memory via direct charge injection through a threshold resistive-switching layer. Nat Commun 2022; 13:4591. [PMID: 35933437 PMCID: PMC9357017 DOI: 10.1038/s41467-022-32380-3] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/25/2021] [Accepted: 07/25/2022] [Indexed: 11/10/2022] Open
Abstract
The explosion in demand for massive data processing and storage requires revolutionary memory technologies featuring ultrahigh speed, ultralong retention, ultrahigh capacity and ultralow energy consumption. Although a breakthrough in ultrafast floating-gate memory has been achieved very recently, it still suffers a high operation voltage (tens of volts) due to the Fowler-Nordheim tunnelling mechanism. It is still a great challenge to realize ultrafast nonvolatile storage with low operation voltage. Here we propose a floating-gate memory with a structure of MoS2/hBN/MoS2/graphdiyne oxide/WSe2, in which a threshold switching layer, graphdiyne oxide, instead of a dielectric blocking layer in conventional floating-gate memories, is used to connect the floating gate and control gate. The volatile threshold switching characteristic of graphdiyne oxide allows the direct charge injection from control gate to floating gate by applying a nanosecond voltage pulse (20 ns) with low magnitude (2 V), and restricts the injected charges in floating gate for a long-term retention (10 years) after the pulse. The high operation speed and low voltage endow the device with an ultralow energy consumption of 10 fJ. These results demonstrate a new strategy to develop next-generation high-speed low-energy nonvolatile memory.
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Affiliation(s)
- Yuan Li
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China
| | - Zhi Cheng Zhang
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China
| | - Jiaqiang Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.,Advanced Membranes and Porous Materials Center, Physical Sciences and Engineering Division, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Saudi Arabia
| | - Xu-Dong Chen
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.
| | - Ya Kong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
| | - Fu-Dong Wang
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China
| | - Guo-Xin Zhang
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China
| | - Tong-Bu Lu
- MOE International Joint Laboratory of Materials Microstructure, Institute for New Energy Materials and Low Carbon Technologies, School of Material Science and Engineering, Tianjin University of Technology, Tianjin, 300384, China.
| | - Jin Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.
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29
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Jiang Y, Zhang L, Wang R, Li H, Li L, Zhang S, Li X, Su J, Song X, Xia C. Asymmetric Ferroelectric-Gated Two-Dimensional Transistor Integrating Self-Rectifying Photoelectric Memory and Artificial Synapse. ACS NANO 2022; 16:11218-11226. [PMID: 35730563 DOI: 10.1021/acsnano.2c04271] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ferroelectric field-effect transistors (Fe-FET) are promising candidates for future information devices. However, they suffer from low endurance and short retention time, which retards the application of processing memory in the same physical processes. Here, inspired by the ferroelectric proximity effects, we design a reconfigurable two-dimensional (2D) MoS2 transistor featuring with asymmetric ferroelectric gate, exhibiting high memory and logic ability with a program/erase ratio of over 106 and a self-rectifying ratio of 103. Interestingly, the robust electric and optic cycling are obtained with a large switching ratio of 106 and nine distinct resistance states upon optical excitation with excellent nonvolatile characteristics. Meanwhile, the operation of memory mimics the synapse behavior in response to light spikes with different intensity and number. This design realizes an integration of robust processing memory in one single device, which demonstrates a considerable potential of an asymmetric ferroelectric gate in the development of Fe-FETs for logic processing and nonvolatile memory applications.
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Affiliation(s)
- Yurong Jiang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Linlin Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Rui Wang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Hongzhi Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Lin Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Suicai Zhang
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xueping Li
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Jian Su
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Xiaohui Song
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
| | - Congxin Xia
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Xinxiang 453007, China
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30
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Das S, Kabiraj A, Mahapatra S. Room temperature giant magnetoresistance in half-metallic Cr 2C based two-dimensional tunnel junctions. NANOSCALE 2022; 14:9409-9418. [PMID: 35730762 DOI: 10.1039/d2nr02056d] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional (2D) magnetic materials inherit enormous potential to revolutionize next-generation spintronic technology. The majority of prior investigations using 2D ferromagnet-based tunnel junctions have shown encouraging tunnel magnetoresistance (TMR) at low temperatures. Using first-principles-based calculations, here we investigate the magnetic properties of commercially available Cr2C crystals at their monolayer limit and reveal their half metallicity properties far beyond room temperature. We then design hetero-multilayer structures combining Cr2C with graphene and hexagonal boron nitride (h-BN) and report their magnetoresistance using spin-polarized quantum transport calculations. While graphene based devices, adsorbed on the metal contact, reveal a very high TMR (1200%), it can be further increased to 1500% by changing the barrier layer to h-BN. The dependence of TMR on the number of barrier layers and different metallic electrode materials (Ti, Ag, and Au) are also studied. Our investigation suggests that Cr2C based spin valves can serve as the perfect building blocks for room temperature all-2D spintronic devices.
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Affiliation(s)
- Shreeja Das
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
| | - Arnab Kabiraj
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
| | - Santanu Mahapatra
- Nano-Scale Device Research Laboratory, Department of Electronic Systems Engineering, Indian Institute of Science (IISc), Bangalore, Bangalore 560012, India.
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31
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Sasaki T, Ueno K, Taniguchi T, Watanabe K, Nishimura T, Nagashio K. Ultrafast Operation of 2D Heterostructured Nonvolatile Memory Devices Provided by the Strong Short-Time Dielectric Breakdown Strength of h-BN. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25659-25669. [PMID: 35604943 DOI: 10.1021/acsami.2c03198] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently, the ultrafast operation (∼20 ns) of a two-dimensional (2D) heterostructured nonvolatile memory (NVM) device was demonstrated, attracting considerable attention. However, there is no consensus on its physical origin. In this study, various 2D NVM device structures are compared. First, we reveal that the hole injection at the metal/MoS2 interface is the speed-limiting path in the NVM device with the access region. Therefore, MoS2 NVM devices with a direct tunneling path between source/drain electrodes and the floating gate are fabricated by removing the access region. Indeed, a 50 ns program/erase operation is successfully achieved for devices with metal source/drain electrodes as well as graphite source/drain electrodes. This controlled experiment proves that an atomically sharp interface is not necessary for ultrafast operation, which is contrary to the previous literature. Finally, the dielectric breakdown strength (EBD) of h-BN under short voltage pulses is examined. Since a high dielectric breakdown strength allows a large tunneling current, ultrafast operations can be achieved. Surprisingly, an EBD = 26.1 MV/cm for h-BN is realized under short voltage pulses, largely exceeding the EBD = ∼12 MV/cm from the direct current (DC) measurement. This suggests that the high EBD of h-BN can be the physical origin of the ultrafast operation.
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Affiliation(s)
- Taro Sasaki
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Keiji Ueno
- Department of Chemistry, Saitama University, Saitama 338-8570, Japan
| | | | | | - Tomonori Nishimura
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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32
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Ranjan P, Gaur S, Yadav H, Urgunde AB, Singh V, Patel A, Vishwakarma K, Kalirawana D, Gupta R, Kumar P. 2D materials: increscent quantum flatland with immense potential for applications. NANO CONVERGENCE 2022; 9:26. [PMID: 35666392 PMCID: PMC9170864 DOI: 10.1186/s40580-022-00317-7] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Accepted: 05/22/2022] [Indexed: 05/08/2023]
Abstract
Quantum flatland i.e., the family of two dimensional (2D) quantum materials has become increscent and has already encompassed elemental atomic sheets (Xenes), 2D transition metal dichalcogenides (TMDCs), 2D metal nitrides/carbides/carbonitrides (MXenes), 2D metal oxides, 2D metal phosphides, 2D metal halides, 2D mixed oxides, etc. and still new members are being explored. Owing to the occurrence of various structural phases of each 2D material and each exhibiting a unique electronic structure; bestows distinct physical and chemical properties. In the early years, world record electronic mobility and fractional quantum Hall effect of graphene attracted attention. Thanks to excellent electronic mobility, and extreme sensitivity of their electronic structures towards the adjacent environment, 2D materials have been employed as various ultrafast precision sensors such as gas/fire/light/strain sensors and in trace-level molecular detectors and disease diagnosis. 2D materials, their doped versions, and their hetero layers and hybrids have been successfully employed in electronic/photonic/optoelectronic/spintronic and straintronic chips. In recent times, quantum behavior such as the existence of a superconducting phase in moiré hetero layers, the feasibility of hyperbolic photonic metamaterials, mechanical metamaterials with negative Poisson ratio, and potential usage in second/third harmonic generation and electromagnetic shields, etc. have raised the expectations further. High surface area, excellent young's moduli, and anchoring/coupling capability bolster hopes for their usage as nanofillers in polymers, glass, and soft metals. Even though lab-scale demonstrations have been showcased, large-scale applications such as solar cells, LEDs, flat panel displays, hybrid energy storage, catalysis (including water splitting and CO2 reduction), etc. will catch up. While new members of the flatland family will be invented, new methods of large-scale synthesis of defect-free crystals will be explored and novel applications will emerge, it is expected. Achieving a high level of in-plane doping in 2D materials without adding defects is a challenge to work on. Development of understanding of inter-layer coupling and its effects on electron injection/excited state electron transfer at the 2D-2D interfaces will lead to future generation heterolayer devices and sensors.
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Affiliation(s)
- Pranay Ranjan
- Department of Metallurgical and Materials Engineering, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India.
| | - Snehraj Gaur
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Himanshu Yadav
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Ajay B Urgunde
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Vikas Singh
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Avit Patel
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Kusum Vishwakarma
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Deepak Kalirawana
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India
| | - Ritu Gupta
- Advanced Materials and Devices Laboratory, Department of Chemistry, Indian Institute of Technology Jodhpur, Karwar, 342037, Rajasthan, India.
| | - Prashant Kumar
- Global Innovative Centre for Advanced Nanomaterials (GICAN), College of Engineering, Science and Environment (CESE), School of Engineering, The University of Newcastle, University Drive, Callaghan, NSW, 2308, Australia.
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Yuan S, Qiu B, Amina K, Li L, Zhai P, Su Y, Xue T, Jiang T, Ding L, Wei G. Robust and Low-Power-Consumption Black Phosphorus-Graphene Artificial Synaptic Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21242-21252. [PMID: 35499243 DOI: 10.1021/acsami.2c03667] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Two-dimensional (2D) black phosphorus (BP) materials, as the most promising building blocks for the development of artificial synapses, have attracted more and more attention. However, the instability of exfoliated 2D BP structures still remains a problem in the development of artificial synapse devices. In this study, the robust and low-power-consumption artificial-synaptic-based BP was successfully manufactured. The synapse devices have high stability in the air atmosphere and do not show obvious degradation over 3 months. The obtained devices not only implement the main function of synapses but also perform the function of dendritic neural synapses and simple logical operations, revealing their very strong learning behavior. The high mobility of 2D BP as well as the coupled effect and quantum confinement effect of the graphene oxide quantum dot (GOQD) can greatly boost the performance of BP-based synapse devices, such as low power consumption (62 pW) and high sensitivity (ultrasmall stimuli at an amplitude of -20 mV). Moreover, benefiting from the GOQD and the interaction between BP and graphene, the main dominated mechanism of the BP-graphene synapse device can be the capture and release of electrons by the 2D BP and GOQD instead of the conductive filament.
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Affiliation(s)
- Shuai Yuan
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Bocang Qiu
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Koshayeva Amina
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Lan Li
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Peichen Zhai
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Ying Su
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Tao Xue
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Tao Jiang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo University, Ningbo, Zhejiang 315211, People's Republic of China
| | - Liping Ding
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
| | - Guodong Wei
- Materials Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology, Xi'an, Shaanxi 710021, People's Republic of China
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34
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Akkanen STM, Fernandez HA, Sun Z. Optical Modification of 2D Materials: Methods and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110152. [PMID: 35139583 DOI: 10.1002/adma.202110152] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/24/2022] [Indexed: 06/14/2023]
Abstract
2D materials are under extensive research due to their remarkable properties suitable for various optoelectronic, photonic, and biological applications, yet their conventional fabrication methods are typically harsh and cost-ineffective. Optical modification is demonstrated as an effective and scalable method for accurate and local in situ engineering and patterning of 2D materials in ambient conditions. This review focuses on the state of the art of optical modification of 2D materials and their applications. Perspectives for future developments in this field are also discussed, including novel laser tools, new optical modification strategies, and their emerging applications in quantum technologies and biotechnologies.
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Affiliation(s)
| | - Henry Alexander Fernandez
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
| | - Zhipei Sun
- Department of Electronics and Nanoengineering, Aalto University, Espoo, 02150, Finland
- QTF Centre of Excellence, Department of Applied Physics, Aalto University, Espoo, 02150, Finland
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35
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Zhang R, Lai Y, Chen W, Teng C, Sun Y, Yang L, Wang J, Liu B, Cheng HM. Carrier Trapping in Wrinkled 2D Monolayer MoS 2 for Ultrathin Memory. ACS NANO 2022; 16:6309-6316. [PMID: 35324162 DOI: 10.1021/acsnano.2c00350] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS2 show multilevel storage capability, an on/off ratio of 106, and a retention time of >104 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
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Affiliation(s)
- Rongjie Zhang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yongjue Lai
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Wenjun Chen
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Changjiu Teng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yujie Sun
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Liusi Yang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Jingyun Wang
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Bilu Liu
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Hui-Ming Cheng
- Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China
- Faculty of Materials and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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36
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Pal A, Zhang S, Chavan T, Agashiwala K, Yeh CH, Cao W, Banerjee K. Quantum-Engineered Devices Based on 2D Materials for Next-Generation Information Processing and Storage. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2109894. [PMID: 35468661 DOI: 10.1002/adma.202109894] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2021] [Revised: 04/11/2022] [Indexed: 06/14/2023]
Abstract
As an approximation to the quantum state of solids, the band theory, developed nearly seven decades ago, fostered the advance of modern integrated solid-state electronics, one of the most successful technologies in the history of human civilization. Nonetheless, their rapidly growing energy consumption and accompanied environmental issues call for more energy-efficient electronics and optoelectronics, which necessitate the exploration of more advanced quantum mechanical effects, such as band-to-band tunneling, spin-orbit coupling, spin-valley locking, and quantum entanglement. The emerging 2D layered materials, featured by their exotic electrical, magnetic, optical, and structural properties, provide a revolutionary low-dimensional and manufacture-friendly platform (and many more opportunities) to implement these quantum-engineered devices, compared to the traditional electronic materials system. Here, the progress in quantum-engineered devices is reviewed and the opportunities/challenges of exploiting 2D materials are analyzed to highlight their unique quantum properties that enable novel energy-efficient devices, and useful insights to quantum device engineers and 2D-material scientists are provided.
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Affiliation(s)
- Arnab Pal
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Shuo Zhang
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
- College of ISEE, Zhejiang University, Hangzhou, 310027, China
| | - Tanmay Chavan
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kunjesh Agashiwala
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Chao-Hui Yeh
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Wei Cao
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Kaustav Banerjee
- ECE Department, University of California, Santa Barbara, Santa Barbara, CA, 93106, USA
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37
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Weston A, Castanon EG, Enaldiev V, Ferreira F, Bhattacharjee S, Xu S, Corte-León H, Wu Z, Clark N, Summerfield A, Hashimoto T, Gao Y, Wang W, Hamer M, Read H, Fumagalli L, Kretinin AV, Haigh SJ, Kazakova O, Geim AK, Fal'ko VI, Gorbachev R. Interfacial ferroelectricity in marginally twisted 2D semiconductors. NATURE NANOTECHNOLOGY 2022; 17:390-395. [PMID: 35210566 PMCID: PMC9018412 DOI: 10.1038/s41565-022-01072-w] [Citation(s) in RCA: 58] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2021] [Accepted: 01/04/2022] [Indexed: 05/19/2023]
Abstract
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of new metamaterials. Here we demonstrate a room temperature ferroelectric semiconductor that is assembled using mono- or few-layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarization arranged into a twist-controlled network. The last can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The observed interfacial charge transfer, movement of domain walls and their bending rigidity agree well with theoretical calculations. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential avenue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
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Affiliation(s)
- Astrid Weston
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | | | - Vladimir Enaldiev
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
- Kotel'nikov Institute of Radio-engineering and Electronics, Russian Academy of Sciences, Moscow, Russia
| | - Fábio Ferreira
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Shubhadeep Bhattacharjee
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Shuigang Xu
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | | | - Zefei Wu
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Nicholas Clark
- National Graphene Institute, University of Manchester, Manchester, UK
- Department of Materials, University of Manchester, Manchester, UK
| | - Alex Summerfield
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Teruo Hashimoto
- National Graphene Institute, University of Manchester, Manchester, UK
- Department of Materials, University of Manchester, Manchester, UK
| | - Yunze Gao
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Wendong Wang
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Matthew Hamer
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Harriet Read
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Laura Fumagalli
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Andrey V Kretinin
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
- Department of Materials, University of Manchester, Manchester, UK
| | - Sarah J Haigh
- National Graphene Institute, University of Manchester, Manchester, UK
- Department of Materials, University of Manchester, Manchester, UK
| | | | - A K Geim
- Department of Physics and Astronomy, University of Manchester, Manchester, UK
- National Graphene Institute, University of Manchester, Manchester, UK
| | - Vladimir I Fal'ko
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester, UK.
| | - Roman Gorbachev
- Department of Physics and Astronomy, University of Manchester, Manchester, UK.
- National Graphene Institute, University of Manchester, Manchester, UK.
- Henry Royce Institute for Advanced Materials, University of Manchester, Manchester, UK.
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38
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Khot AC, Dongale TD, Nirmal KA, Sung JH, Lee HJ, Nikam RD, Kim TG. Amorphous Boron Nitride Memristive Device for High-Density Memory and Neuromorphic Computing Applications. ACS APPLIED MATERIALS & INTERFACES 2022; 14:10546-10557. [PMID: 35179364 DOI: 10.1021/acsami.1c23268] [Citation(s) in RCA: 13] [Impact Index Per Article: 6.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Although two-dimensional (2D) nanomaterials are promising candidates for use in memory and synaptic devices owing to their unique physical, chemical, and electrical properties, the process compatibility, synthetic reliability, and cost-effectiveness of 2D materials must be enhanced. In this context, amorphous boron nitride (a-BN) has emerged as a potential material for future 2D nanoelectronics. Therefore, we explored the use of a-BN for multilevel resistive switching (MRS) and synaptic learning applications by fabricating a complementary metal-oxide-semiconductor (CMOS)-compatible Ag/a-BN/Pt memory device. The redox-active Ag and boron vacancies enhance the mixed electrochemical metallization and valence change conduction mechanism. The synthesized a-BN switching layer was characterized using several analyses. The fabricated memory devices exhibited bipolar resistive switching with low set and reset voltages (+0.8 and -2 V, respectively) and a small operating voltage distribution. In addition, the switching voltages of the device were modeled using a time-series analysis, for which the Holt's exponential smoothing technique provided good modeling and prediction results. According to the analytical calculations, the fabricated Ag/a-BN/Pt device was found to be memristive, and its MRS ability was investigated by varying the compliance current. The multilevel states demonstrated a uniform resistance distribution with a high endurance of up to 104 direct current (DC) cycles and memory retention characteristics of over 106 s. Conductive atomic force microscopy was performed to clarify the resistive switching mechanism of the device, and the likely mixed electrochemical metallization and valence change mechanisms involved therein were discussed based on experimental results. The Ag/a-BN/Pt memristive devices mimicked potentiation/depression and spike-timing-dependent plasticity-based Hebbian-learning rules with a high pattern accuracy (90.8%) when implemented in neural network simulations.
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Affiliation(s)
- Atul C Khot
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Tukaram D Dongale
- School of Nanoscience and Biotechnology, Shivaji University, Kolhapur 416004, India
| | - Kiran A Nirmal
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ji Hoon Sung
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Ho Jin Lee
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Revannath D Nikam
- Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Republic of Korea
| | - Tae Geun Kim
- School of Electrical Engineering, Korea University, Anam-ro 145, Seongbuk-gu, Seoul 02841, Republic of Korea
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Mao JY, Wu S, Ding G, Wang ZP, Qian FS, Yang JQ, Zhou Y, Han ST. A van der Waals Integrated Damage-Free Memristor Based on Layered 2D Hexagonal Boron Nitride. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106253. [PMID: 35083839 DOI: 10.1002/smll.202106253] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2021] [Revised: 12/20/2021] [Indexed: 06/14/2023]
Abstract
2D materials with intriguing properties have been widely used in optoelectronics. However, electronic devices suffered from structural damage due to the ultrathin materials and uncontrolled defects at interfaces upon metallization, which hindered the development of reliable devices. Here, a damage-free Au/h-BN/Au memristor is reported using a clean, water-assisted metal transfer approach by physically assembling Au electrodes onto the layered h-BN which minimized the structural damage and undesired interfacial defects. The memristors demonstrate significantly improved performance with the coexistence of nonpolar and threshold switching as well as tunable current levels by controlling the compliance current, compared with devices with evaporated contacts. The devices integrated into an array show suppressed sneak path current and can work as both logic gates and latches to implement logic operations allowing in-memory computing. Cross-sectional scanning transmission electron microscopy analysis validates the feasibility of this nondestructive metal integration approach, the crucial role of high-quality atomically sharp interface in resistive switching, and a direct observation of percolation path. The underlying mechanism of boron vacancies-assisted transport is further supported experimentally by conductive atomic force microscopy free from process-induced damage, and theoretically by ab initio simulations.
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Affiliation(s)
- Jing-Yu Mao
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Shuang Wu
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Fang-Sheng Qian
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jia-Qin Yang
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
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40
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Copolymers of 3-Arylthieno[3,2-b]thiophenes Bearing Different Substituents: Synthesis, Electronic, Optical, Sensor and Memory Properties. Eur Polym J 2022. [DOI: 10.1016/j.eurpolymj.2022.111167] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
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41
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Liu Y, Zhao K, Ren Y, Wan S, Yang C, Li J, Wang F, Chen C, Su J, Chen D, Zhao Y, Liu K, Zhang H. Highly Plasticized Lanthanide Luminescence for Information Storage and Encryption Applications. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2105108. [PMID: 35018745 PMCID: PMC8895122 DOI: 10.1002/advs.202105108] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Revised: 11/24/2021] [Indexed: 05/08/2023]
Abstract
The development of new storage media to meet the demands for diverse information storage scenarios is a great challenge. Here, a series of lanthanide-based luminescent organogels with ultrastrong mechanical performance and outstanding plasticity are developed for patterned information storage and encryption applications. The organogels possessing outstanding mechanical properties and tunable luminescent colors are prepared by electrostatic and coordinative interactions between natural DNA, synthetic ligands, and rare earth (RE) ions. The organogel-REs can be stretched by 180 times and show an ultrastrong breaking strength of 80 MPa. A series of applications with both information storage and encryption, such as self-information pattern, quick response (QR) code, and barcode, are successfully demonstrated by the organogel-REs. The developed information storage systems have various advantages of good processability, high stretchability, excellent stability, and versatile design of information patterns. Therefore, the organogel-RE-based information storage systems are suitable for applications under different scenarios, such as flexible devices under repeating rude operations. The advancements will enable the design and development of luminescent organogel-REs as information storage and encryption media for various scenarios.
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Affiliation(s)
- Yawei Liu
- College of Materials Science and Opto‐Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Kelu Zhao
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Yubin Ren
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
| | - Sikang Wan
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Chenjing Yang
- College of Energy Engineering and State Key Laboratory of Fluid Power and Mechatronic SystemsZhejiang UniversityHangzhou310027China
| | - Jingjing Li
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Fan Wang
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
| | - Chunying Chen
- National Center for Nanoscience and Technology of ChinaBeijing100190China
| | - Juanjuan Su
- College of Materials Science and Opto‐Electronic TechnologyUniversity of Chinese Academy of SciencesBeijing100049China
| | - Dong Chen
- College of Energy Engineering and State Key Laboratory of Fluid Power and Mechatronic SystemsZhejiang UniversityHangzhou310027China
| | - Yuliang Zhao
- National Center for Nanoscience and Technology of ChinaBeijing100190China
| | - Kai Liu
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
| | - Hongjie Zhang
- State Key Laboratory of Rare Earth Resource UtilizationChangchun Institute of Applied ChemistryChinese Academy of SciencesChangchun130022China
- Key Laboratory of Organic Optoelectronics & Molecular Engineering of Ministry of EducationDepartment of ChemistryTsinghua UniversityBeijing100084China
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42
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León C, Melnik R. Machine Learning for Shape Memory Graphene Nanoribbons and Applications in Biomedical Engineering. Bioengineering (Basel) 2022; 9:bioengineering9030090. [PMID: 35324779 PMCID: PMC8945856 DOI: 10.3390/bioengineering9030090] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/24/2021] [Revised: 02/16/2022] [Accepted: 02/18/2022] [Indexed: 12/30/2022] Open
Abstract
Shape memory materials have been playing an important role in a wide range of bioengineering applications. At the same time, recent developments of graphene-based nanostructures, such as nanoribbons, have demonstrated that, due to the unique properties of graphene, they can manifest superior electronic, thermal, mechanical, and optical characteristics ideally suited for their potential usage for the next generation of diagnostic devices, drug delivery systems, and other biomedical applications. One of the most intriguing parts of these new developments lies in the fact that certain types of such graphene nanoribbons can exhibit shape memory effects. In this paper, we apply machine learning tools to build an interatomic potential from DFT calculations for highly ordered graphene oxide nanoribbons, a material that had demonstrated shape memory effects with a recovery strain up to 14.5% for 2D layers. The graphene oxide layer can shrink to a metastable phase with lower constant lattice through the application of an electric field, and returns to the initial phase through an external mechanical force. The deformation leads to an electronic rearrangement and induces magnetization around the oxygen atoms. DFT calculations show no magnetization for sufficiently narrow nanoribbons, while the machine learning model can predict the suppression of the metastable phase for the same narrower nanoribbons. We can improve the prediction accuracy by analyzing only the evolution of the metastable phase, where no magnetization is found according to DFT calculations. The model developed here allows also us to study the evolution of the phases for wider nanoribbons, that would be computationally inaccessible through a pure DFT approach. Moreover, we extend our analysis to realistic systems that include vacancies and boron or nitrogen impurities at the oxygen atomic positions. Finally, we provide a brief overview of the current and potential applications of the materials exhibiting shape memory effects in bioengineering and biomedical fields, focusing on data-driven approaches with machine learning interatomic potentials.
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Affiliation(s)
- Carlos León
- M3AI Laboratory, MS2Discovery Interdisciplinary Research Institute, Wilfrid Laurier University, Waterloo, ON N2L 3C5, Canada;
| | - Roderick Melnik
- M3AI Laboratory, MS2Discovery Interdisciplinary Research Institute, Wilfrid Laurier University, Waterloo, ON N2L 3C5, Canada;
- BCAM—Basque Centre for Applied Mathematics, 48009 Bilbao, Spain
- Correspondence:
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Jena AK, Mallik SK, Sahu MC, Sahoo S, Sahoo AK, Sharma NK, Mohanty J, Gupta SK, Ahuja R, Sahoo S. Strain-mediated ferromagnetism and low-field magnetic reversal in Co doped monolayer [Formula: see text]. Sci Rep 2022; 12:2593. [PMID: 35173206 PMCID: PMC8850603 DOI: 10.1038/s41598-022-06346-w] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/03/2021] [Accepted: 01/20/2022] [Indexed: 11/09/2022] Open
Abstract
Strain-mediated magnetism in 2D materials and dilute magnetic semiconductors hold multi-functional applications for future nano-electronics. Herein, First principles calculations are employed to study the influence of biaxial strain on the magnetic properties of Co-doped monolayer [Formula: see text]. The non-magnetic [Formula: see text] shows ferromagnetic signature upon Co doping due to spin polarization, which is further improved at low compressive (-2 %) and tensile (+2 %) strains. From the PDOS and spin density analysis, the opposite magnetic ordering is found to be favourable under the application of compressive and tensile strains. The double exchange interaction and p-d hybridization mechanisms make Co-doped [Formula: see text] a potential host for magnetism. More importantly, the competition between exchange and crystal field splittings, i.e. ([Formula: see text]), of the Co-atom play pivotal roles in deciding the values of the magnetic moments under applied strain. Micromagnetic simulation reveals, the ferromagnetic behavior calculated from DFT exhibits low-field magnetic reversal (190 Oe). Moreover, the spins of Co-doped [Formula: see text] are slightly tilted from the easy axis orientations showing slanted ferromagnetic hysteresis loop. The ferromagnetic nature of Co-doped [Formula: see text] suppresses beyond [Formula: see text] strain, which is reflected in terms of decrease in the coercivity in the micromagnetic simulation. The understanding of low-field magnetic reversal and spin orientations in Co-doped [Formula: see text] may pave the way for next-generation spintronics and straintronics applications.
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Affiliation(s)
- Anjan Kumar Jena
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sameer Kumar Mallik
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Mousam Charan Sahu
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Sandhyarani Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - Ajit Kumar Sahoo
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Neha Kapila Sharma
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
| | - J. Mohanty
- Nanomagnetism and Microscopy Laboratory, Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy 502284 India
| | - Sanjeev K. Gupta
- Computational Materials and Nanoscience Group, Department of Physics and Electronics, St.Xavier’s College, Ahmedabad, 380009 India
| | - Rajeev Ahuja
- Condensed Matter Theory Group, Department of Physics and Astronomy, Uppsala University, 75120 Uppsala, Sweden
- Department of Physics, Indian Institute of Technology Ropar, Rupnagar, Punjab 140001 India
| | - Satyaprakash Sahoo
- Laboratory for Low Dimensional Materials, Institute of Physics, Bhubaneswar, 751005 India
- Homi Bhabha National Institute, Training School Complex, Anushakti Nagar, Mumbai, 400094 India
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44
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Meng Y, Zhu J. Low energy consumption fiber-type memristor array with integrated sensing-memory. NANOSCALE ADVANCES 2022; 4:1098-1104. [PMID: 36131775 PMCID: PMC9417447 DOI: 10.1039/d1na00703c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/22/2021] [Accepted: 01/04/2022] [Indexed: 06/15/2023]
Abstract
The increasing growth of electronic information science and technology has triggered the renaissance of the artificial sensory nervous system (SNS), which can emulate the response of organisms towards external stimuli with high efficiency. In traditional SNS, the sensor units and the memory units are separated, and therefore difficult to miniaturize and integrate. Here, we have incorporated the sensor unit and the memory unit into one system, taking advantage of the unique properties of the ion-gel system. Meanwhile, the weaving-type memory array presents paramount advantages of integration and miniaturization and conformal lamination to curved surfaces. It is worth noting that the electrical double layer (EDL) within the ion gel endow the device with a low operation voltage (<1 V) to achieve low energy consumption. Finally, according to the relationship of pressure stimuli and electrical behavior, the integrated responsiveness-storage external stimuli ability is achieved. Our work offers a new platform for designing cutting edge SNS.
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Affiliation(s)
- Yanfang Meng
- Key Laboratory of Advanced Optical Communication Systems and Network, School of Electronic Engineering and Computer Science Department, Peking University Beijing 100091 China
- Department of Engineering Mechanics, Tsinghua University Beijing 100084 China
| | - Jiaxue Zhu
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics of the Chinese Academy of Sciences Beitucheng West Road Beijing 100029 China
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45
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Siao MD, Gandhi AC, Sahoo AK, Wu YC, Syu HK, Tsai MY, Tsai TH, Yang YC, Lin YF, Liu RS, Chiu PW. WSe 2/WS 2 Heterobilayer Nonvolatile Memory Device with Boosted Charge Retention. ACS APPLIED MATERIALS & INTERFACES 2022; 14:3467-3475. [PMID: 34995438 DOI: 10.1021/acsami.1c20076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A two-dimensional (2D) nonvolatile memory device architecture to improve the long-term charge retention with the minimum charge loss without compromising storage capacity and the extinction ratio for practical applications has been an imminent demand. To address the current issue, we adopted a novel type-II band-aligned heterobilayer channel comprising vertically stacked monolayer WSe2 nanodots on monolayer WS2. The band offset modulation leads to electron doping from WSe2 nanodots into the WS2 channel without any external driving electric field. As a result, the tested device outperformed with a memory window as high as 34 V and a negligible charge loss of 7% in a retention period of 10 years while maintaining a high extinction ratio of 106. The doping technique presented in this work provides a feasible route to modulate the electrical properties of 2D channel materials without hampering charge transport, paving the way for high-performance 2D memory devices.
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Affiliation(s)
- Ming-Deng Siao
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | | | - Anup Kumar Sahoo
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chieh Wu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Hong-Kai Syu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Meng-Yu Tsai
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Tsung-Han Tsai
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yueh-Chiang Yang
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
| | - Rai-Shung Liu
- Department of Chemistry, National Tsing Hua University, Hsinchu 30013, Taiwan
- Frontier Research Center on Fundamental and Applied Science of Matters, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Department of Electrical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
- Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan
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46
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Wang H, Han J, Wang M, Wang L, Jia S, Cao H, Hu S, He YB. Bottom-up synthesized crystalline boron quantum dots with nonvolatile memory effects through one-step hydrothermal polymerization of ammonium pentaborane and boric acid. CrystEngComm 2022. [DOI: 10.1039/d2ce00298a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Crystalline BQDs are synthesized through a bottom-up strategy and used to fabricate a BQD–PVP memory device with nonvolatile rewritable memory effects.
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Affiliation(s)
- Huiqi Wang
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Jiacheng Han
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Mei Wang
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Liyong Wang
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Suping Jia
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Honghong Cao
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Shengliang Hu
- School of Energy and Power Engineering & School of Materials Science and Engineering, North University of China, Taiyuan 030051, P. R. China
| | - Yan-Bing He
- Shenzhen Geim Graphene Center, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen, 518055, P. R. China
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48
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Ago H, Okada S, Miyata Y, Matsuda K, Koshino M, Ueno K, Nagashio K. Science of 2.5 dimensional materials: paradigm shift of materials science toward future social innovation. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2022; 23:275-299. [PMID: 35557511 PMCID: PMC9090349 DOI: 10.1080/14686996.2022.2062576] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2022] [Revised: 03/29/2022] [Accepted: 03/30/2022] [Indexed: 05/22/2023]
Abstract
The past decades of materials science discoveries are the basis of our present society - from the foundation of semiconductor devices to the recent development of internet of things (IoT) technologies. These materials science developments have depended mainly on control of rigid chemical bonds, such as covalent and ionic bonds, in organic molecules and polymers, inorganic crystals and thin films. The recent discovery of graphene and other two-dimensional (2D) materials offers a novel approach to synthesizing materials by controlling their weak out-of-plane van der Waals (vdW) interactions. Artificial stacks of different types of 2D materials are a novel concept in materials synthesis, with the stacks not limited by rigid chemical bonds nor by lattice constants. This offers plenty of opportunities to explore new physics, chemistry, and engineering. An often-overlooked characteristic of vdW stacks is the well-defined 2D nanospace between the layers, which provides unique physical phenomena and a rich field for synthesis of novel materials. Applying the science of intercalation compounds to 2D materials provides new insights and expectations about the use of the vdW nanospace. We call this nascent field of science '2.5 dimensional (2.5D) materials,' to acknowledge the important extra degree of freedom beyond 2D materials. 2.5D materials not only offer a new field of scientific research, but also contribute to the development of practical applications, and will lead to future social innovation. In this paper, we introduce the new scientific concept of this science of '2.5D materials' and review recent research developments based on this new scientific concept.
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Affiliation(s)
- Hiroki Ago
- Global Innovation Center, Kyushu University, Fukuoka, Japan
- CONTACT Hiroki Ago Global Innovation Center, Kyushu University, Fukuoka816-8580, Japan
| | - Susumu Okada
- Graduate School of Pure and Applied Sciences, University of Tsukuba, Ibaraki, Japan
| | - Yasumitsu Miyata
- Department of Physics, Tokyo Metropolitan University, Hachioji, Japan
| | | | | | - Kosei Ueno
- Department of Chemistry, Faculty of Science, Hokkaido University, Hokkaido, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo, Japan
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Abstract
With the development of the Internet of things, artificial intelligence, and wearable devices, massive amounts of data are generated and need to be processed. High standards are required to store and analyze this information. In the face of the explosive growth of information, the memory used in data storage and processing faces great challenges. Among many types of memories, memristors have received extensive attentions due to their low energy consumption, strong tolerance, simple structure, and strong miniaturization. However, they still face many problems, especially in the application of artificial bionic synapses, which call for higher requirements in the mechanical properties of the device. The progress of integrated circuit and micro-processing manufacturing technology has greatly promoted development of the flexible memristor. The use of a flexible memristor to simulate nerve synapses will provide new methods for neural network computing and bionic sensing systems. In this paper, the materials and structure of the flexible memristor are summarized and discussed, and the latest configuration and new materials are described. In addition, this paper will focus on its application in artificial bionic synapses and discuss the challenges and development direction of flexible memristors from this perspective.
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50
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Nguyen DA, Jo Y, Tran TU, Jeong MS, Kim H, Im H. Electrically and Optically Controllable p-n Junction Memtransistor Based on an Al 2 O 3 Encapsulated 2D Te/ReS 2 van der Waals Heterostructure. SMALL METHODS 2021; 5:e2101303. [PMID: 34928036 DOI: 10.1002/smtd.202101303] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Indexed: 06/14/2023]
Abstract
The exploration of memtransistors as a combination of a memristor and a transistor has recently attracted intensive attention because it offers a promising candidate for next-generation multilevel nonvolatile memories and synaptic devices. However, the present state-of-the-art memtransistors, which are based on a single material, such as MoS2 or perovskite, exhibit a relatively low switching ratio, require extremely high electric fields to modulate bistable resistance states and do not perform multifunctional operations. Here, the realization of an electrically and optically controllable p-n junction memtransistor using an Al2 O3 encapsulated 2D Te/ReS2 van der Waals heterostructure is reported. The hybrid memtransistor shows a reversible bipolar resistance switching behavior between a low resistance state and a high resistance state with a high switching ratio up to 106 at a low operating voltage (<10 V), high cycling endurance, and long retention time. Moreover, multiple resistance states are achieved by applying different bias voltages, gate voltages, or light powers. In addition, logical operations, including the inverter and AND/OR gates, and synaptic activities are performed by controlling the optical and electrical inputs. The work offers a novel strategy for the reliable fabrication of p-n junction memtransistors for multifunctional devices and neuromorphic applications.
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Affiliation(s)
- Duc Anh Nguyen
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Yongcheol Jo
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Thi Uyen Tran
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Mun Seok Jeong
- Department of Physics, Department of Energy Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hyungsang Kim
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
| | - Hyunsik Im
- Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea
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