1
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Wang H, Harbola V, Wu YJ, van Aken PA, Mannhart J. Interface Design beyond Epitaxy: Oxide Heterostructures Comprising Symmetry-Forbidden Interfaces. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2405065. [PMID: 38838331 DOI: 10.1002/adma.202405065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/08/2024] [Revised: 06/04/2024] [Indexed: 06/07/2024]
Abstract
Epitaxial growth of thin-film heterostructures is generally considered the most successful procedure to obtain interfaces of excellent structural and electronic quality between 3D materials. However, these interfaces can only join material systems with crystal lattices of matching symmetries and lattice constants. This article presents a novel category of interfaces, the fabrication of which is membrane-based and does not require epitaxial growth. These interfaces therefore overcome the limitations imposed by epitaxy. Leveraging the additional degrees of freedom gained, atomically clean interfaces are demonstrated between threefold symmetric sapphire and fourfold symmetric SrTiO3. Atomic-resolution imaging reveals structurally well-defined interfaces with a novel moiré-type reconstruction.
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Affiliation(s)
- Hongguang Wang
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Varun Harbola
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Yu-Jung Wu
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Peter A van Aken
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Jochen Mannhart
- Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
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2
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Kim J, Yu M, Lee JW, Shang SL, Kim GY, Pal P, Seo J, Campbell N, Eom K, Ramachandran R, Rzchowski MS, Oh SH, Choi SY, Liu ZK, Levy J, Eom CB. Electronic-grade epitaxial (111) KTaO 3 heterostructures. SCIENCE ADVANCES 2024; 10:eadk4288. [PMID: 38787951 PMCID: PMC11122674 DOI: 10.1126/sciadv.adk4288] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 04/22/2024] [Indexed: 05/26/2024]
Abstract
KTaO3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO3 and KTaO3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO3-based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal-based oxides that lie beyond the capabilities of conventional methods.
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Affiliation(s)
- Jieun Kim
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Muqing Yu
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Jung-Woo Lee
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Shun-Li Shang
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Gi-Yeop Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Pratap Pal
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Jinsol Seo
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Neil Campbell
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Kitae Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Ranjani Ramachandran
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Mark S. Rzchowski
- Department of Physics, University of Wisconsin-Madison, Madison, WI 53706, USA
| | - Sang Ho Oh
- Department of Energy Science, Sungkyunkwan University, Suwon 16419, Korea
- Department of Energy Engineering, KENTECH Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), Naju 58330, Republic of Korea
| | - Si-Young Choi
- Department of Materials Science and Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Pohang 37673, Republic of Korea
| | - Zi-Kui Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA
| | - Jeremy Levy
- Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA 15260, USA
- Pittsburgh Quantum Institute, Pittsburgh, PA 15260, USA
| | - Chang-Beom Eom
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
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3
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Jani H, Harrison J, Hooda S, Prakash S, Nandi P, Hu J, Zeng Z, Lin JC, Godfrey C, Omar GJ, Butcher TA, Raabe J, Finizio S, Thean AVY, Ariando A, Radaelli PG. Spatially reconfigurable antiferromagnetic states in topologically rich free-standing nanomembranes. NATURE MATERIALS 2024; 23:619-626. [PMID: 38374414 PMCID: PMC11068574 DOI: 10.1038/s41563-024-01806-2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2023] [Accepted: 01/11/2024] [Indexed: 02/21/2024]
Abstract
Antiferromagnets hosting real-space topological textures are promising platforms to model fundamental ultrafast phenomena and explore spintronics. However, they have only been epitaxially fabricated on specific symmetry-matched substrates, thereby preserving their intrinsic magneto-crystalline order. This curtails their integration with dissimilar supports, restricting the scope of fundamental and applied investigations. Here we circumvent this limitation by designing detachable crystalline antiferromagnetic nanomembranes of α-Fe2O3. First, we show-via transmission-based antiferromagnetic vector mapping-that flat nanomembranes host a spin-reorientation transition and rich topological phenomenology. Second, we exploit their extreme flexibility to demonstrate the reconfiguration of antiferromagnetic states across three-dimensional membrane folds resulting from flexure-induced strains. Finally, we combine these developments using a controlled manipulator to realize the strain-driven non-thermal generation of topological textures at room temperature. The integration of such free-standing antiferromagnetic layers with flat/curved nanostructures could enable spin texture designs via magnetoelastic/geometric effects in the quasi-static and dynamical regimes, opening new explorations into curvilinear antiferromagnetism and unconventional computing.
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Affiliation(s)
- Hariom Jani
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Jack Harrison
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Sonu Hooda
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
| | - Saurav Prakash
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Proloy Nandi
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Junxiong Hu
- Department of Physics, National University of Singapore, Singapore, Singapore.
| | - Zhiyang Zeng
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Jheng-Cyuan Lin
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Charles Godfrey
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK
| | - Ganesh Ji Omar
- Department of Physics, National University of Singapore, Singapore, Singapore
| | - Tim A Butcher
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Jörg Raabe
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland
| | - Simone Finizio
- Swiss Light Source, Paul Scherrer Institut, Villigen, Switzerland.
| | - Aaron Voon-Yew Thean
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore, Singapore
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore
| | - A Ariando
- Department of Physics, National University of Singapore, Singapore, Singapore.
- Integrative Sciences and Engineering Programme, National University of Singapore, Singapore, Singapore.
| | - Paolo G Radaelli
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, UK.
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Nian L, Sun H, Wang Z, Xu D, Hao B, Yan S, Li Y, Zhou J, Deng Y, Hao Y, Nie Y. Sr 4Al 2O 7: A New Sacrificial Layer with High Water Dissolution Rate for the Synthesis of Freestanding Oxide Membranes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2307682. [PMID: 38238890 DOI: 10.1002/adma.202307682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 12/18/2023] [Indexed: 02/01/2024]
Abstract
Freestanding perovskite oxide membranes have drawn great attention recently since they offer exceptional structural tunability and stacking ability, providing new opportunities in fundamental research and potential device applications in silicon-based semiconductor technology. Among different types of sacrificial layers, the (Ca, Sr, Ba)3Al2O6 compounds are most widely used since they can be dissolved in water and prepare high-quality perovskite oxide membranes with clean and sharp surfaces and interfaces; However, the typical transfer process takes a long time (up to hours) in obtaining millimeter-size freestanding membranes, let alone realize wafer-scale samples with high yield. Here, a new member of the SrO-Al2O3 family, Sr4Al2O7 is introduced, and its high dissolution rate, ≈10 times higher than that of Sr3Al2O6 is demonstrated. The high-dissolution-rate of Sr4Al2O7 is most likely related to the more discrete Al-O networks and higher concentration of water-soluble Sr-O species in this compound. This work significantly facilitates the preparation of freestanding membranes and sheds light on the integration of multifunctional perovskite oxides in practical electronic devices.
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Affiliation(s)
- Leyan Nian
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
- Suzhou Laboratory, Suzhou, 215125, P. R. China
| | - Haoying Sun
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Zhichao Wang
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Duo Xu
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Bo Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Shengjun Yan
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yueying Li
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Jian Zhou
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yu Deng
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yufeng Hao
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
| | - Yuefeng Nie
- National Laboratory of Solid State Microstructures, Jiangsu Key Laboratory of Artificial Functional Materials, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210023, P. R. China
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5
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Yun S, le Cozannet TE, Christoffersen CH, Brand E, Jespersen TS, Pryds N. Strain Engineering: Perfecting Freestanding Perovskite Oxide Fabrication. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310782. [PMID: 38431927 DOI: 10.1002/smll.202310782] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/22/2023] [Revised: 01/30/2024] [Indexed: 03/05/2024]
Abstract
Freestanding oxide membranes provide a promising path for integrating devices on silicon and flexible platforms. To ensure optimal device performance, these membranes must be of high crystal quality, stoichiometric, and their morphology free from cracks and wrinkles. Often, layers transferred on substrates show wrinkles and cracks due to a lattice relaxation from an epitaxial mismatch. Doping the sacrificial layer of Sr3 Al2 O6 (SAO) with Ca or Ba offers a promising solution to overcome these challenges, yet its effects remain critically underexplored. A systematic study of doping Ca into SAO is presented, optimizing the pulsed laser deposition (PLD) conditions, and adjusting the supporting polymer type and thickness, demonstrating that strain engineering can effectively eliminate these imperfections. Using SrTiO3 as a case study, it is found that Ca1.5 Sr1.5 Al2 O6 offers a near-perfect match and a defect-free freestanding membrane. This approach, using the water-soluble Bax /Cax Sr3-x Al2 O6 family, paves the way for producing high-quality, large freestanding membranes for functional oxide devices.
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Affiliation(s)
- Shinhee Yun
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Thomas Emil le Cozannet
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | | | - Eric Brand
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Thomas Sand Jespersen
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
| | - Nini Pryds
- Department of Energy Conversion and Storage, Technical University of Denmark (DTU), Fysikvej, 310, Kgs. Lyngby, 2800, Denmark
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6
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Varshney S, Choo S, Thompson L, Yang Z, Shah J, Wen J, Koester SJ, Mkhoyan KA, McLeod AS, Jalan B. Hybrid Molecular Beam Epitaxy for Single-Crystalline Oxide Membranes with Binary Oxide Sacrificial Layers. ACS NANO 2024; 18:6348-6358. [PMID: 38314696 DOI: 10.1021/acsnano.3c11192] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/07/2024]
Abstract
The advancement in thin-film exfoliation for synthesizing oxide membranes has led to possibilities for creating artificially assembled heterostructures with structurally and chemically incompatible materials. The sacrificial layer method is a promising approach to exfoliate as-grown films from a compatible material system, allowing for their integration with dissimilar materials. Nonetheless, the conventional sacrificial layers often possess an intricate stoichiometry, thereby constraining their practicality and adaptability, particularly when considering techniques such as molecular beam epitaxy (MBE). This is where easy-to-grow binary alkaline-earth-metal oxides with a rock salt crystal structure are useful. These oxides, which include (Mg, Ca, Sr, Ba)O, can be used as a sacrificial layer covering a much broader range of lattice parameters compared to conventional sacrificial layers and are easily dissolvable in deionized water. In this study, we show the epitaxial growth of the single-crystalline perovskite SrTiO3 (STO) on sacrificial layers consisting of crystalline SrO, BaO, and Ba1-xCaxO films, employing a hybrid MBE method. Our results highlight the rapid (≤5 min) dissolution of the sacrificial layer when immersed in deionized water, facilitating the fabrication of millimeter-sized STO membranes. Using high-resolution X-ray diffraction, atomic-force microscopy, scanning transmission electron microscopy, impedance spectroscopy, and scattering-type near-field optical microscopy (SNOM), we demonstrate single-crystalline STO membranes with bulk-like intrinsic dielectric properties. The employment of alkaline earth metal oxides as sacrificial layers is likely to simplify membrane synthesis, particularly with MBE, thus expanding the research and application possibilities.
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Affiliation(s)
- Shivasheesh Varshney
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Liam Thompson
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Zhifei Yang
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jay Shah
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Jiaxuan Wen
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Steven J Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - K Andre Mkhoyan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Alexander S McLeod
- School of Physics and Astronomy, University of Minnesota, Twin Cities, Minnesota 55455, United States
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minnesota 55455, United States
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7
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Sánchez-Santolino G, Rouco V, Puebla S, Aramberri H, Zamora V, Cabero M, Cuellar FA, Munuera C, Mompean F, Garcia-Hernandez M, Castellanos-Gomez A, Íñiguez J, Leon C, Santamaria J. A 2D ferroelectric vortex pattern in twisted BaTiO 3 freestanding layers. Nature 2024; 626:529-534. [PMID: 38356067 PMCID: PMC10866709 DOI: 10.1038/s41586-023-06978-6] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/22/2022] [Accepted: 12/14/2023] [Indexed: 02/16/2024]
Abstract
The wealth of complex polar topologies1-10 recently found in nanoscale ferroelectrics results from a delicate balance between the intrinsic tendency of the materials to develop a homogeneous polarization and the electric and mechanical boundary conditions imposed on them. Ferroelectric-dielectric interfaces are model systems in which polarization curling originates from open circuit-like electric boundary conditions, to avoid the build-up of polarization charges through the formation of flux-closure11-14 domains that evolve into vortex-like structures at the nanoscale15-17 level. Although ferroelectricity is known to couple strongly with strain (both homogeneous18 and inhomogeneous19,20), the effect of mechanical constraints21 on thin-film nanoscale ferroelectrics has been comparatively less explored because of the relative paucity of strain patterns that can be implemented experimentally. Here we show that the stacking of freestanding ferroelectric perovskite layers with controlled twist angles provides an opportunity to tailor these topological nanostructures in a way determined by the lateral strain modulation associated with the twisting. Furthermore, we find that a peculiar pattern of polarization vortices and antivortices emerges from the flexoelectric coupling of polarization to strain gradients. This finding provides opportunities to create two-dimensional high-density vortex crystals that would enable us to explore previously unknown physical effects and functionalities.
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Affiliation(s)
- G Sánchez-Santolino
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
| | - V Rouco
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
| | - S Puebla
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - H Aramberri
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
| | - V Zamora
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - M Cabero
- ICTS Centro Nacional de Microscopia Electrónica 'Luis Brú', Universidad Complutense, Madrid, Spain
| | - F A Cuellar
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
| | - C Munuera
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - F Mompean
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - M Garcia-Hernandez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - A Castellanos-Gomez
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
- Instituto de Ciencia de Materiales de Madrid ICMM-CSIC, Madrid, Spain
| | - J Íñiguez
- Materials Research and Technology Department, Luxembourg Institute of Science and Technology (LIST), Esch-sur-Alzette, Luxembourg
- Department of Physics and Materials Science, University of Luxembourg, Belvaux, Luxembourg
| | - C Leon
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain
| | - J Santamaria
- GFMC, Departamento Fisica de Materiales, Facultad de Fisica, Universidad Complutense, Madrid, Spain.
- Laboratorio de Heteroestructuras con aplicación en spintrónica, Unidad Asociada UCM/CSIC, Madrid, Spain.
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8
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Yang G, Dong G, Zhang B, Xu X, Zhao Y, Hu Z, Liu M. Twisted Integration of Complex Oxide Magnetoelectric Heterostructures via Water-Etching and Transfer Process. NANO-MICRO LETTERS 2023; 16:19. [PMID: 37975933 PMCID: PMC10656404 DOI: 10.1007/s40820-023-01233-z] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2023] [Accepted: 10/09/2023] [Indexed: 11/19/2023]
Abstract
HIGHLIGHTS The (001)-oriented ferromagnetic La0.67Sr0.33MnO3 films are stuck onto the (011)-oriented ferroelectric single-crystal 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 substrate with 0° and 45° twist angle. By applying a 7.2 kV cm-1 electric field, the coexistence of uniaxial and fourfold in-plane magnetic anisotropy is observed in 45° Sample, while a typical uniaxial anisotropy is found in 0° Sample. Manipulating strain mode and degree that can be applied to epitaxial complex oxide thin films have been a cornerstone of strain engineering. In recent years, lift-off and transfer technology of the epitaxial oxide thin films have been developed that enabled the integration of heterostructures without the limitation of material types and crystal orientations. Moreover, twisted integration would provide a more interesting strategy in artificial magnetoelectric heterostructures. A specific twist angle between the ferroelectric and ferromagnetic oxide layers corresponds to the distinct strain regulation modes in the magnetoelectric coupling process, which could provide some insight in to the physical phenomena. In this work, the La0.67Sr0.33MnO3 (001)/0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (011) (LSMO/PMN-PT) heterostructures with 45º and 0º twist angles were assembled via water-etching and transfer process. The transferred LSMO films exhibit a fourfold magnetic anisotropy with easy axis along LSMO < 110 >. A coexistence of uniaxial and fourfold magnetic anisotropy with LSMO [110] easy axis is observed for the 45° Sample by applying a 7.2 kV cm-1 electrical field, significantly different from a uniaxial anisotropy with LSMO [100] easy axis for the 0° Sample. The fitting of the ferromagnetic resonance field reveals that the strain coupling generated by the 45° twist angle causes different lattice distortion of LSMO, thereby enhancing both the fourfold and uniaxial anisotropy. This work confirms the twisting degrees of freedom for magnetoelectric coupling and opens opportunities for fabricating artificial magnetoelectric heterostructures.
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Affiliation(s)
- Guannan Yang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Guohua Dong
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Butong Zhang
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xu Xu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Yanan Zhao
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Zhongqiang Hu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Ming Liu
- State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
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9
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Christensen DV. Perspectives on oxide heterostructures - the curious case of γ-Al 2O 3/SrTiO 3. NANOSCALE 2023; 15:3704-3712. [PMID: 36723154 DOI: 10.1039/d2nr07172j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The heterostructure formed by depositing nanoscale thin films of spinel γ-Al2O3 on perovskite SrTiO3 exhibits a range of exciting properties including room temperature epitaxial growth, high electron mobility, strain-tunable magnetic order, and a symmetry-related reordering of the conduction bands. In comparison to the benchmark LaAlO3/SrTiO3 heterostructure, the γ-Al2O3/SrTiO3 heterostructure has been more sparsely investigated, which leaves plenty of room for scientific and technological discoveries. In this perspective article, I describe the key findings of the γ-Al2O3/SrTiO3 heterostructure and propose five directions for future research: (1) an exploration of novel phenomena emerging when relaxing the conventional epitaxial constraint of matching crystal structures across the interface, (2) a dynamic switching of a strong polarization through nanoscale electromigration of aluminum vacancies, (3) autonomous and forced enhancement of the electron mobility via oxygen vacancy diffusion, (4) writing and erasing of magnetic and conducting nanolines using ferroelastic domain walls, and (5) a multiferroic state formed by combining ferroelectricity, ferromagnetism, and ferroelasticity. The proposed research directions may shed light on both fundamental aspects of the heterostructure and pave the way for applications within green energy devices and nanoelectronics.
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Yoon H, Truttmann TK, Liu F, Matthews BE, Choo S, Su Q, Saraswat V, Manzo S, Arnold MS, Bowden ME, Kawasaki JK, Koester SJ, Spurgeon SR, Chambers SA, Jalan B. Freestanding epitaxial SrTiO 3 nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. SCIENCE ADVANCES 2022; 8:eadd5328. [PMID: 36563139 PMCID: PMC9788776 DOI: 10.1126/sciadv.add5328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically used in growing epitaxial oxides can damage graphene. Here, we demonstrate the successful use of hybrid molecular beam epitaxy for SrTiO3 growth that does not require an independent oxygen source, thus avoiding graphene damage. This approach produces epitaxial films with self-regulating cation stoichiometry. Furthermore, the film (46-nm-thick SrTiO3) can be exfoliated and transferred to foreign substrates. These results open the door to future studies of previously unattainable freestanding oxide nanomembranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy. This approach has potentially important implications for the commercial application of perovskite oxides in flexible electronics and as a dielectric in van der Waals thin-film electronics.
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Affiliation(s)
- Hyojin Yoon
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Tristan K. Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Fengdeng Liu
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Bethany E. Matthews
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland,, WA 99352, USA
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Qun Su
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Sebastian Manzo
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Michael S. Arnold
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Mark E. Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Jason K. Kawasaki
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Steven J. Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Steven R. Spurgeon
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland,, WA 99352, USA
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Scott A. Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
- Corresponding author.
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Shen J, Dong Z, Qi M, Zhang Y, Zhu C, Wu Z, Li D. Observation of Moiré Patterns in Twisted Stacks of Bilayer Perovskite Oxide Nanomembranes with Various Lattice Symmetries. ACS APPLIED MATERIALS & INTERFACES 2022; 14:50386-50392. [PMID: 36287237 DOI: 10.1021/acsami.2c14746] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The design and fabrication of novel quantum devices in which exotic phenomena arise from moiré physics have sparked a new race of conceptualization and creation of artificial lattice structures. This interest is further extended to the research on thin-film transition metal oxides, with the goal of synthesizing twisted layers of perovskite oxides concurrently revealing moiré landscapes. By utilizing a sacrificial-layer-based approach, we show that such high-quality twisted bilayer oxide nanomembrane structures can be achieved. We observe atomic-scale distinct moiré patterns directly formed with different twist angles, and the symmetry-inequivalent nanomembranes can be stacked together to constitute new complex moiré configurations. This study paves the way to the construction of higher-order artificial oxide heterostructures based on different materials/symmetries and provides the materials foundation for investigating moiré-related electronic effects in an expanded selection of twisted oxide thin films.
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Affiliation(s)
- Jiaying Shen
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Zhengang Dong
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
| | - MingQun Qi
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin300071, P. R. China
| | - Chao Zhu
- SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, Southeast University, Nanjing210096, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing100876, P. R. China
| | - Danfeng Li
- Department of Physics, City University of Hong Kong, Kowloon, Hong Kong999077, China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR999077, China
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