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George J, Vikraman HK, Ghuge RS, Reji RP, Jayaraman SV, Magna G, Paolesse R, Sivalingam Y, Di Natale C, Mangalampalli KSRN. Self-Powered, Photovoltaic-Driven NH₃ Sensor: Ultra-High Selectivity, High Sensitivity, and IoT-Enabled Real-Time Monitoring with Novel Organic Molecule Functionalized TiZnN 2/p-Si Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2025:e2502324. [PMID: 40351045 DOI: 10.1002/smll.202502324] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/27/2025] [Revised: 04/29/2025] [Indexed: 05/14/2025]
Abstract
Ammonia (NH₃) detection is vital for environmental monitoring, industrial safety, and food quality assurance. Conventional sensors based on metal oxides, conducting polymers, and 2D materials often require external power, limiting their efficiency. Here, a novel self-powered NH₃ sensor utilizing silicon corrole-functionalized TiZnN₂ (SipC-TiZnN)/p-Si heterostructure is presented. By integrating the photovoltaic effect of the TiZnN₂/p-Si junction with gas sensing, the device enables efficient charge separation under visible light without external power. It demonstrates outstanding NH₃ sensitivity (2.62 × 10⁻⁴ ppm⁻¹) and an ultra-low detection limit of 0.9 ppm. The sensor exhibits a superior selectivity for NH₃ over other gases, maintains stability for over 90 days, and operates reliably in humid conditions (≈75% RH). Mechanistic insights from Density Functional Theory calculations and Scanning Kelvin Probe measurements confirm strong NH₃ adsorption. A portable, IoT-enabled prototype validates real-time NH₃ monitoring for fish freshness assessment, highlighting its potential for environmental, food safety, and industrial applications. This work represents a significant advancement in energy-efficient sensing, bridging the gap between high-performance materials and real-world deployment.
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Affiliation(s)
- Jeena George
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chengalpattu District, Kattankulathur, Tamil Nadu, 603203, India
| | - Hajeesh Kumar Vikraman
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chengalpattu District, Kattankulathur, Tamil Nadu, 603203, India
| | - Rahul Suresh Ghuge
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chengalpattu District, Kattankulathur, Tamil Nadu, 603203, India
| | - Rence Painappallil Reji
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chengalpattu District, Kattankulathur, Tamil Nadu, 603203, India
| | - Surya Velappa Jayaraman
- New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, Miyagi, 980 8579, Japan
| | - Gabriele Magna
- Department of Chemical Science and Technologies, University of Rome Tor Vergata, Via della Ricerca Scientifica, Roma, 00133, Italy
| | - Roberto Paolesse
- Department of Chemical Science and Technologies, University of Rome Tor Vergata, Via della Ricerca Scientifica, Roma, 00133, Italy
| | - Yuvaraj Sivalingam
- Computer, Electrical, and Mathematical Sciences and Engineering Division CEMSE, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia
- Department of Computer Science, KPR College of Arts Science and Research, Coimbatore, Tamil Nadu, 641407, India
| | - Corrado Di Natale
- Department of Electronics Engineering, University of Rome Tor Vergata, Via del Politecnico 1, Roma, 00133, Italy
| | - Kiran S R N Mangalampalli
- Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Chengalpattu District, Kattankulathur, Tamil Nadu, 603203, India
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Ridwan M, Gasulla M, Reverter F. Principle and Applications of Thermoelectric Generators: A Review. SENSORS (BASEL, SWITZERLAND) 2025; 25:2484. [PMID: 40285174 PMCID: PMC12031398 DOI: 10.3390/s25082484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/04/2025] [Revised: 04/07/2025] [Accepted: 04/11/2025] [Indexed: 04/29/2025]
Abstract
For an extensive and sustainable deployment of technological ecosystems such as the Internet of Things, it is a must to leverage the free energy available in the environment to power the autonomous sensors. Among the different alternatives, thermal energy harvesters based on thermoelectric generators (TEGs) are an attractive solution for those scenarios in which a gradient of temperature is present. In such a context, this article reviews the operating principle of TEGs and then the applications proposed in the literature in the last years. These applications are subclassified into five categories: domestic, industrial, natural heat, wearable, and others. In each category, a comprehensive comparison is carried out, including the thermal, mechanical, and electrical information of each case. Finally, an identification of the challenges and opportunities of research in the field of TEGs applied to low-power sensor nodes is exposed.
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Affiliation(s)
| | | | - Ferran Reverter
- Department of Electronic Engineering, Universitat Politècnica de Catalunya—Barcelona Tech, 08860 Castelldefels, Barcelona, Spain; (M.R.); (M.G.)
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Han Y, Seo J, Lee DH, Yoo H. IGZO-Based Electronic Device Application: Advancements in Gas Sensor, Logic Circuit, Biosensor, Neuromorphic Device, and Photodetector Technologies. MICROMACHINES 2025; 16:118. [PMID: 40047564 PMCID: PMC11857157 DOI: 10.3390/mi16020118] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/24/2024] [Revised: 01/14/2025] [Accepted: 01/19/2025] [Indexed: 03/09/2025]
Abstract
Metal oxide semiconductors, such as indium gallium zinc oxide (IGZO), have attracted significant attention from researchers in the fields of liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) for decades. This interest is driven by their high electron mobility of over ~10 cm2/V·s and excellent transmittance of more than ~80%. Amorphous IGZO (a-IGZO) offers additional advantages, including compatibility with various processes and flexibility making it suitable for applications in flexible and wearable devices. Furthermore, IGZO-based thin-film transistors (TFTs) exhibit high uniformity and high-speed switching behavior, resulting in low power consumption due to their low leakage current. These advantages position IGZO not only as a key material in display technologies but also as a candidate for various next-generation electronic devices. This review paper provides a comprehensive overview of IGZO-based electronics, including applications in gas sensors, biosensors, and photosensors. Additionally, it emphasizes the potential of IGZO for implementing logic gates. Finally, the paper discusses IGZO-based neuromorphic devices and their promise in overcoming the limitations of the conventional von Neumann computing architecture.
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Affiliation(s)
- Youngmin Han
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
| | - Juhyung Seo
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
| | - Dong Hyun Lee
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
| | - Hocheon Yoo
- Department of Semiconductor Engineering, Gachon University, Seongnam 13120, Republic of Korea;
- Department of Electronic Engineering, Gachon University, Seongnam 13120, Republic of Korea
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4
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Hou L, Duan J, Xiong F, Carraro C, Shi T, Maboudian R, Long H. Low Power Gas Sensors: From Structure to Application. ACS Sens 2024; 9:6327-6357. [PMID: 39535966 DOI: 10.1021/acssensors.4c01642] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2024]
Abstract
Gas sensors are pivotal across industries, encompassing environmental monitoring, industrial safety, and healthcare. Recently, a surge in demand for low power gas sensors has emerged, driven by the huge need for applications in portable devices, wireless sensor networks, and the Internet of things (IoT). The practical realization of a densely interconnected sensor network demands gas sensors to have low power consumption for energy-efficient operation. This Perspective offers a comprehensive overview of the progress of low-power sensors for gas and volatile organic compound detection, with a keen focus on the interplay between sensing materials (including metal oxide semiconductors, metal-organic frameworks, and two-dimensional materials), sensor structures, and power consumption. The main gas sensing mechanisms are discussed, and we delve into the mechanisms for achieving low power consumption including material properties and sensor design. Furthermore, typical applications of low power gas sensors are also presented, including wearable technology, food safety, and environmental monitoring. The review will end by discussing some open questions and ongoing needs.
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Affiliation(s)
- Linlin Hou
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, China
| | - Jian Duan
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, China
| | - Feng Xiong
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, China
| | - Carlo Carraro
- Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, United States
| | - Tielin Shi
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, China
| | - Roya Maboudian
- Department of Chemical and Biomolecular Engineering, University of California, Berkeley, California 94720, United States
| | - Hu Long
- State Key Laboratory of Digital Manufacturing Equipment and Technology, Huazhong University of Science and Technology, Wuhan, Hubei Province 430074, China
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Ghuge RS, Madhavanunni Rekha S, Vikraman HK, Velappa Jayaraman S, Kiran MSRN, Bhat SV, Sivalingam Y. Transparent TiO 2/MoO 3 Heterojunction-Based Photovoltaic Self-Powered Triethylamine Gas Sensor with IoT-Enabled Smartphone Interface. ACS Sens 2024; 9:6592-6604. [PMID: 39591497 DOI: 10.1021/acssensors.4c02110] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2024]
Abstract
Conventional gas sensors encounter a significant obstacle in terms of power consumption, making them unsuitable for integration with the next generation of smartphones, wireless platforms, and the Internet of Things (IoT). Energy-efficient gas sensors, particularly self-powered gas sensors, can effectively tackle this problem. The researchers are making significant strides in advancing photovoltaic self-powered gas sensors by employing diverse materials and their compositions. Unfortunately, several of these sensors seem complex in fabrication and mainly target oxidizing species detection. To address these issues, we have successfully employed a transparent, cost-efficient solution processed bilayer TiO2/MoO3 heterojunction-based photovoltaic self-powered gas sensor with superior VOC sensing capabilities, marking a significant milestone in this field. The scanning Kelvin probe (SKP) measurement reveals the remarkable change in contact potential difference (-23 mV/kPa) of the TiO2/MoO3 bilayered film after UV light exposure in a triethylamine (TEA) atmosphere, indicating the highest reactivity between TEA molecules and TiO2/MoO3. Under photovoltaic mode, the sensor further demonstrates exceptional sensitivity (∼2.35 × 10-3 ppm-1) to TEA compared to other studied VOCs, with an admirable limit of detection (22 ppm) and signal-to-noise ratio (1540). Additionally, the sensor shows the ability to recognize TEA and estimate its composition in a binary mixture of VOCs from a similar class. The strongest affinity of TiO2/MoO3 toward the TEA molecule, the lowest covalent bond energy, and the highest electron-donating nature of TEA may be mainly attributed to the highest adsorption between TiO2/MoO3 and TEA. We further demonstrate the practical applicability of the TEA sensor with a prototype device connected to a smartphone via the IoT, enabling continuous surveillance of TEA.
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Affiliation(s)
- Rahul Suresh Ghuge
- Laboratory of Sensors, Energy and Electronic Devices (Lab SEED), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Sreelakshmi Madhavanunni Rekha
- Green Energy Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, India
| | - Hajeesh Kumar Vikraman
- Functional Coatings and Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Surya Velappa Jayaraman
- New Industry Creation Hatchery Center (NICHe), Tohoku University, Aoba-ku, Sendai, Miyagi 980-8579, Japan
- Novel, Advanced, and Applied Materials (NAAM) Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - Mangalampalli S R N Kiran
- Functional Coatings and Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
| | - S Venkataprasad Bhat
- Green Energy Materials Laboratory, Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur 603 203, India
| | - Yuvaraj Sivalingam
- Laboratory of Sensors, Energy and Electronic Devices (Lab SEED), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Tamil Nadu 603203, India
- Computer, Electrical, and Mathematical Sciences and Engineering Division (CEMSE), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Kingdom of Saudi Arabia
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Mohammadzadeh MR, Hasani A, Hussain T, Ghanbari H, Fawzy M, Abnavi A, Ahmadi R, Kabir F, De Silva T, Rajapakse RKND, Adachi MM. Enhanced Sensitivity in Photovoltaic 2D MoS 2/Te Heterojunction VOC Sensors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2402464. [PMID: 39058241 PMCID: PMC11618741 DOI: 10.1002/smll.202402464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/27/2024] [Revised: 07/08/2024] [Indexed: 07/28/2024]
Abstract
Volatile organic compound (VOC) sensors have a broad range of applications including healthcare monitoring, product quality control, and air quality management. However, many such applications are demanding, requiring sensors with high sensitivity and selectivity. 2D materials are extensively used in many VOC sensing devices due to their large surface-to-volume ratio and fascinating electronic properties. These properties, along with their exceptional flexibility, low power consumption, room-temperature operation, chemical functionalization potential, and defect engineering capabilities, make 2D materials ideal for high-performance VOC sensing. Here, a 2D MoS2/Te heterojunction is reported that significantly improves the VOC detection compared to MoS2 and Te sensors on their own. Density functional theory (DFT) analysis shows that the MoS2/Te heterojunction significantly enhances the adsorption energy and therefore sensing sensitivity of the sensor. The sensor response, which denotes the percentage change in the sensor's conductance upon VOC exposure, is further enhanced under photo-illumination and zero-bias conditions to values up to ≈7000% when exposed to butanone. The MoS2/Te heterojunction is therefore a promising device architecture for portable and wearable sensing applications.
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Affiliation(s)
| | - Amirhossein Hasani
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
- Department of Physics and MonArk NSF Quantum FoundryMontana State UniversityBozemanMT59717USA
| | - Tanveer Hussain
- School of Science and TechnologyUniversity of New EnglandArmidaleNew South Wales2351Australia
| | - Hamidreza Ghanbari
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Mirette Fawzy
- Department of PhysicsSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Amin Abnavi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Ribwar Ahmadi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Fahmid Kabir
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Thushani De Silva
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - R. K. N. D. Rajapakse
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
- Faculty of EngineeringSri Lanka Institute of Information TechnologyNew Kandy RoadMalabe10115Sri Lanka
| | - Michael M. Adachi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
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7
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Zhang D, Zhou L, Wu Y, Yang C, Zhang H. Triboelectric Nanogenerator for Self-Powered Gas Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2406964. [PMID: 39377767 DOI: 10.1002/smll.202406964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/12/2024] [Revised: 09/18/2024] [Indexed: 10/09/2024]
Abstract
With the continuous acceleration of industrialization, gas sensors are evolving to become portable, wearable and environmentally friendly. However, traditional gas sensors rely on external power supply, which severely limits their applications in various industries. As an innovative and environmentally adaptable power generation technology, triboelectric nanogenerators (TENGs) can be integrated with gas sensors to leverage the benefits of both technologies for efficient and environmentally friendly self-powered gas sensing. This paper delves into the basic principles and current research frontiers of the TENG-based self-powered gas sensor, focusing particularly on innovative applications in environmental safety monitoring, healthcare, as well as emerging fields such as food safety assurance and smart agriculture. It emphasizes the significant advantages of TENG-based self-powered gas sensor systems in promoting environmental sustainability, achieving efficient sensing at room temperature, and driving technological innovations in wearable devices. It also objectively analyzes the technical challenges, including issues related to performance enhancement, theoretical refinement, and application expansion, and provides targeted strategies and future research directions aimed at paving the way for continuous progress and widespread applications in the field of self-powered gas sensors.
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Affiliation(s)
- Dongzhi Zhang
- College of Control Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, China
| | - Lina Zhou
- College of Control Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, China
| | - Yan Wu
- College of Control Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, China
| | - Chunqing Yang
- College of Control Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, China
| | - Hao Zhang
- College of Control Science and Engineering, China University of Petroleum (East China), Qingdao, 266580, China
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8
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Wu R, Hao J, Wang Y. Recent Advances in Engineering of 2D Layered Metal Chalcogenides for Resistive-Type Gas Sensor. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2404821. [PMID: 39344560 DOI: 10.1002/smll.202404821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/09/2024] [Revised: 08/22/2024] [Indexed: 10/01/2024]
Abstract
2D nanomaterials have triggered widespread attention in sensing applications. Especially for 2D layered metal chalcogenides (LMCs), the unique semiconducting properties and high surface area endow them with great potential for gas sensors. The assembly of 2D LMCs with guest species is an effective functionalization method to produce the synergistic effects of hybridization for greatly enhancing the gas-sensing properties. This review starts with the synthetic techniques, sensing properties, and principles, and then comprehensively compiles the advanced achievements of the pristine 2D LMCs gas sensors. Key advances in the development of the functionalization of 2D LMCs for enhancing gas-sensing properties are categorized according to the spatial architectures. It is systematically discussed in three aspects: surface, lattice, and interlayer, to comprehend the benefits of the functionalized 2D LMCs from surface chemical effect, electronic properties, and structure features. The challenges and outlooks for developing high-performance 2D LMCs-based gas sensors are also proposed.
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Affiliation(s)
- Ruozhen Wu
- Fujian Provincial Collaborative Innovation Center of Bamboo Ecological Industry, College of Ecology and Resources Engineering, Wuyi University, Wuyishan, 354300, P. R. China
- Department of Polymer Materials and Engineering, College of Ecology and Resources Engineering, Wuyi University, Wuyishan, 354300, P. R. China
| | - Juanyuan Hao
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
| | - You Wang
- School of Materials Science and Engineering, Harbin Institute of Technology, Harbin, 150001, P. R. China
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Hong S, Wu L, Xiao Z, Chen Y, Kuklin A, Liu H, Ågren H, Ren X, Zhang Y. Facile Exfoliation of Few-Layer Sn-Based Nanosheets for Self-Powered Photo-Electrochemical and All-Optical Modulation Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2404228. [PMID: 39075930 DOI: 10.1002/smll.202404228] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2024] [Revised: 07/12/2024] [Indexed: 07/31/2024]
Abstract
Few-layer tin (Sn)-based nanosheets (NSs) with a thickness of ≈2.5 nm are successfully prepared using a modified liquid phase exfoliation (LPE) method. Here the first exploration of photo-electrochemical (PEC) and nonlinear properties of Sn NSs is presented. The results demonstrate that the PEC properties are tunable under different experimental conditions. Additionally, Sn NSs are shown to exhibit a unique self-powered PEC performance, maintaining a good long-term stability for up to 1 month. Using electron spin resonance, active species, such as hydroxyl radicals (·OH), superoxide radicals (·O2 -), and holes (h+), are detected during operations, providing a deeper understanding of the working mechanism. Furthermore, measurements of nonlinear response reveal that Sn NSs can be effective for all-optical modulation, as it enables the realization of all-optical switching through excitation spatial cross-phase modulation (SXPM). These findings present new research insights and potential applications of Sn NSs in optoelectronics.
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Affiliation(s)
- Siyi Hong
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Leiming Wu
- Advanced Institute of Photonics Technology, School of Information Engineering, Guangdong University of Technology, Guangzhou, 510006, China
| | - Zizhen Xiao
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Yinxiang Chen
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
| | - Artem Kuklin
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Huating Liu
- School of Electrical and Electronic Engineering, Wuhan Polytechnic University, Wuhan, 430023, China
| | - Hans Ågren
- Department of Physics and Astronomy, Uppsala University, Box 516, Uppsala, SE-751 20, Sweden
| | - Xiaohui Ren
- The State Key Laboratory of Refractories and Metallurgy, Key Laboratory for Ferous Metalurgy and Resources Utilization of Ministry of Education & Hubei Provincial Key Laboratory for New Processes of Ironmaking and Steel making, Faculty of Materials, Wuhan University of Science and Technology, Wuhan, 430081, China
| | - Ye Zhang
- Lab of Optoelectronic Technology for Low Dimensional Nanomaterials, School of Chemistry and Chemical Engineering, University of South China, Hengyang, 421001, China
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10
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Chang X, Zheng W, Wen S, Li C, Liu X, Zhang J. Electronic Modulation of Doped MoS 2 Nanosheets for Improved CO 2 Sensing and Capture. J Phys Chem Lett 2024; 15:8660-8666. [PMID: 39158937 DOI: 10.1021/acs.jpclett.4c01872] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/20/2024]
Abstract
Transition-metal dichalcogenides (TMDs) are widely used in the gas sensing field, owing to their high surface-to-volume ratio enabled by the two-dimensional (2D) structure, adjustable band gap, and high electron transfer. However, it is challenging for TMD materials to realize superior CO2 sensing, due to their weak CO2 adsorption capacity. Herein, we predict through density functional theory (DFT) calculations that rare earth metal doping is an effective strategy to boost the CO2 sensing capability of TMDs. As a proof-of-concept, we investigate and find that the introduction of rare earth metal atoms (La, Ce, Pr, or Nd) can induce lattice strain and modulate the electronic properties of MoS2. When negative charges are injected in rare earth metal doped MoS2 (R-MoS2), the 5d or 4f orbital of the rare earth metal atom in R-MoS2 can produce a stronger orbital hybridization with 2p orbitals of C and O in CO2. Therefore, the CO2 adsorption is significantly enhanced and the charge transfer is facilitated for negatively charged R-MoS2. Moreover, negatively charged R-MoS2 exhibits an excellent CO2 selectivity. Our results indicate that the rare earth metal doping and electronic modulation in 2D materials may provide a new pathway for CO2 sensing and capture.
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Affiliation(s)
- Xiao Chang
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Wenyang Zheng
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Shaoting Wen
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Chang Li
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Xianghong Liu
- College of Physics, Qingdao University, Qingdao 266071, China
| | - Jun Zhang
- College of Physics, Qingdao University, Qingdao 266071, China
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11
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Singh M, Scotognella F, Paternò GM. Degenerately doped metal oxide nanocrystals for infrared light harvesting: insight into their plasmonic properties and future perspectives. MATERIALS ADVANCES 2024; 5:6796-6812. [PMID: 39130726 PMCID: PMC11307255 DOI: 10.1039/d4ma00426d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Accepted: 07/30/2024] [Indexed: 08/13/2024]
Abstract
The tuneability of the localized surface plasmon resonance (LSPR) of degenerately doped metal oxide (MOX) nanocrystals (NCs) over a wide range of the infrared (IR) region by controlling NC size and doping content offers a unique opportunity to develop a future generation of optoelectronic and photonic devices like IR photodetectors and sensors. The central aim of this review article is to highlight the distinctive and remarkable plasmonic properties of degenerately or heavily doped MOX nanocrystals by reviewing the comprehensive literature reported so far. In particular, the literature of each MOX NC, i.e. ZnO, CdO, In2O3, and WO3 doped with different dopants, is discussed separately. In addition to discussion of the most commonly used colloidal synthesis approaches, the ultrafast dynamics of charge carriers in NCs and the extraction of LSPR-assisted hot-carriers are also discussed in detail. Finally, future prospective applications of MOX NCs in IR photodetectors and photovoltaic (PV) self-powered chemical sensors are also presented.
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Affiliation(s)
- Mandeep Singh
- Physics Department, Politecnico di Milano Piazza L. da Vinci 32 20133 Milano Italy
| | - Francesco Scotognella
- Department of Applied Science and Technology, Politecnico di Torino Corso Duca degli Abruzzi 24 Torino 10129 Italy
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12
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Li F, Wang X, Li X, Fu Y, Sun Z, Zhao K, Zhu C, Xu X. Construction of Fully Integrated and Energy Self-Sufficient NO 2 Gas Sensors Utilizing Zinc-Air Batteries. ACS Sens 2024; 9:4037-4046. [PMID: 39039775 DOI: 10.1021/acssensors.4c00896] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/24/2024]
Abstract
Exploration of novel self-powered gas sensors free of external energy supply restrictions, such as light illumination and mechanical vibration, for flexible and wearable applications is in urgent need. Herein, this work constructs a flexible and self-powered NO2 gas sensor based on zinc-air batteries (ZABs) with the cathode of the ZABs also acting as the gas-sensitive layer. Furthermore, the SiO2 coating film, serving as a hydrophobic layer, increases the three-phase interfaces for the NO2 reduction reaction. The constructed sensors exhibit a high sensing response (0.3 V @ 5 ppm), an ultralow detection limit (61 ppb), a fast sensing process (129 and 103 s), and excellent selectivity. Moreover, the sensors also possess a wide working temperature range and a low working temperature tolerance (0.34 V at -15 °C). Simulations indicate that the hydrophobic surface at the cathode-hydrogel interface will accommodate more NO2 gas molecules at the reaction sites and prevent the influence of inner water evaporation and direct dissolution of NO2 in the electrolyte, which is beneficial to the enhanced gas sensing abilities. Finally, the self-powered sensing device is incorporated into a smart sensing system for practical applications. This work will pave a new insight into the construction of integrated and energy self-sufficient smart gas sensing systems.
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Affiliation(s)
- Feifei Li
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Xiao Wang
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Xixi Li
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Yao Fu
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Zhaokun Sun
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Keyang Zhao
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
| | - Cunguang Zhu
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, P. R. China
| | - Xijin Xu
- Laboratory of Functional Micro-Nano Materials and Devices, School of Physics and Technology, University of Jinan, 336 Nanxin Zhuang West Road, Jinan 250022, Shandong, P. R. China
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13
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Liu J, Sun R, Bao X, Yang J, Chen Y, Tang B, Liu Z. Machine Learning Driven Atom-Thin Materials for Fragrance Sensing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2401066. [PMID: 38973110 DOI: 10.1002/smll.202401066] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2024] [Revised: 06/05/2024] [Indexed: 07/09/2024]
Abstract
Fragrance plays a crucial role in the daily lives. Its importance spans various sectors, from therapeutic purposes to personal care, making the understanding and accurate identification of fragrances essential. To fully harness the potential of fragrances, efficient and precise fragrance sensing and identification are necessary. However, current fragrance sensors face several limitations, particularly in detecting and differentiating complex scent profiles with high accuracy. To address these challenges, the use of atom-thin materials in fragrance sensors has emerged as a groundbreaking approach. These atom-thin sensors, characterized by their enhanced sensitivity and selectivity, offer significant improvements over traditional sensing technology. Moreover, the integration of Machine Learning (ML) into fragrance sensing has opened new opportunities in the field. ML algorithms applied to fragrance sensing facilitate advancements in four key domains: accurate fragrance identification, precise discrimination between different fragrances, improved detection thresholds for subtle scents, and prediction of fragrance properties. This comprehensive review delves into the synergistic use of atom-thin materials and ML in fragrance sensing, providing an in-depth analysis of how these technologies are revolutionizing the field, offering insights into their current applications and future potential in enhancing the understanding and utilization of fragrances.
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Affiliation(s)
- Juanjuan Liu
- College of Landscape Architecture and Horticulture, Southwest Forestry University, Kunming, 650224, China
| | - Ruijia Sun
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xuan Bao
- College of Landscape Architecture and Horticulture, Southwest Forestry University, Kunming, 650224, China
| | - Jiefu Yang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yanling Chen
- College of Landscape Architecture and Horticulture, Southwest Forestry University, Kunming, 650224, China
| | - Bijun Tang
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
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14
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Jang M, Song DS, Bae G, Cho JH, Lee DH, Shin S, Yim S, Myung S, Lee SS, Kim CG, Song W, Lim J, An KS. Photostimulated Pyrothermoelectric Coupling in Two-Dimensional Tin Monoselenide Enabling Zero-Biased Multimodal Transducers. ACS APPLIED MATERIALS & INTERFACES 2024; 16:30264-30273. [PMID: 38832451 DOI: 10.1021/acsami.4c01481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2024]
Abstract
Despite the advancement of the Internet of Things (IoT) and portable devices, the development of zero-biased sensing systems for the dual detection of light and gases remains a challenge. As an emerging technology, direct energy conversion driven by intriguing physical properties of two-dimensional (2D) materials can be realized in nanodevices or a zero-biased integrated system. In this study, we unprecedentedly attempted to exploit the photostimulated pyrothermoelectric coupling of two-dimensional SnSe for use in zero-biased multimodal transducers for the dual detection of light and gases. We synthesized homogeneous, large-area 6 in SnSe multilayers via a rational synthetic route based on the thermal decomposition of a solution-processed single-source precursor. Zero-biased SnSe transducers for the dual monitoring of light and gases were realized by exploiting the synergistic coupling of the photostimulated pyroelectric and thermoelectric effects of SnSe. The extracted photoresponsivity at 532 nm and NO2 gas responsivity of the SnSe-based transducers corresponded to 1.07 × 10-6 A/W and 13263.6% at 0 V, respectively. To bring universal applicability of the zero-biased SnSe transducers, the wide operation bandwidth photoelectrical properties (visible to NIR) and dynamic current responses toward two NO2/NH3 gases were systematically evaluated.
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Affiliation(s)
- Moonjeong Jang
- National Nano Fab Center (NNFC), Daejeon 34141, Republic of Korea
| | - Da Som Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Garam Bae
- Department of Medical Artificial Intelligence, Konyang University, Daejeon 35365, Republic of Korea
| | - Jae Hee Cho
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Do Hyung Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sunyoung Shin
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Soonmin Yim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sung Myung
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Sun Sook Lee
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Chang Gyoun Kim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Wooseok Song
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
- School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16149, Republic of Korea
| | - Jongsun Lim
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
| | - Ki-Seok An
- Thin Film Materials Research Center, Korea Research Institute of Chemical Technology, Daejeon 34114, Republic of Korea
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15
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Pham PV, Mai TH, Dash SP, Biju V, Chueh YL, Jariwala D, Tung V. Transfer of 2D Films: From Imperfection to Perfection. ACS NANO 2024; 18:14841-14876. [PMID: 38810109 PMCID: PMC11171780 DOI: 10.1021/acsnano.4c00590] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/14/2024] [Revised: 04/03/2024] [Accepted: 04/12/2024] [Indexed: 05/31/2024]
Abstract
Atomically thin 2D films and their van der Waals heterostructures have demonstrated immense potential for breakthroughs and innovations in science and technology. Integrating 2D films into electronics and optoelectronics devices and their applications in electronics and optoelectronics can lead to improve device efficiencies and tunability. Consequently, there has been steady progress in large-area 2D films for both front- and back-end technologies, with a keen interest in optimizing different growth and synthetic techniques. Parallelly, a significant amount of attention has been directed toward efficient transfer techniques of 2D films on different substrates. Current methods for synthesizing 2D films often involve high-temperature synthesis, precursors, and growth stimulants with highly chemical reactivity. This limitation hinders the widespread applications of 2D films. As a result, reports concerning transfer strategies of 2D films from bare substrates to target substrates have proliferated, showcasing varying degrees of cleanliness, surface damage, and material uniformity. This review aims to evaluate, discuss, and provide an overview of the most advanced transfer methods to date, encompassing wet, dry, and quasi-dry transfer methods. The processes, mechanisms, and pros and cons of each transfer method are critically summarized. Furthermore, we discuss the feasibility of these 2D film transfer methods, concerning their applications in devices and various technology platforms.
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Affiliation(s)
- Phuong V. Pham
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - The-Hung Mai
- Department
of Physics, National Sun Yat-sen University, Kaohsiung 80424, Taiwan
| | - Saroj P. Dash
- Department
of Microtechnology and Nanoscience, Chalmers
University of Technology, Gothenburg 41296, Sweden
| | - Vasudevanpillai Biju
- Research
Institute for Electronic Science, Hokkaido
University, Hokkaido 001-0020, Japan
| | - Yu-Lun Chueh
- Department
of Materials Science and Engineering, National
Tsing Hua University, Hsinchu 30013, Taiwan
| | - Deep Jariwala
- Department
of Electrical and Systems Engineering, University
of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Vincent Tung
- Department
of Chemical System Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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16
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Thota C, Gangadhara C, Radhalayam D, Singiri R, Bak NH, Kondaiah P, Ningappa C, Maddaka R, Kim MD. CuO nanostructure-decorated InGaN nanorods for selective H 2S gas detection. Phys Chem Chem Phys 2024; 26:15530-15538. [PMID: 38752997 DOI: 10.1039/d3cp06318f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Establishing a heterostructure is one of the adequate strategies for enhancing device performance and has been explored in sensing, and energy applications. In this study, we constructed a heterostructure through a two-step process involving hydrothermal synthesis of CuO nanostructures and subsequent spin coating on MBE-grown InGaN NRs. We found that the CuO content on the InGaN NRs has a great impact on carrier injection at the heterojunction and thus the H2S gas sensing performance. Popcorn CuO/InGaN NR shows excellent gas sensing performance towards different concentrations of H2S at room temperature. The highest response is up to 35.54% to a H2S concentration of 100 ppm. Even more significantly, this response is further enhanced significantly (123.70%) under 365 nm UV light. In contrast, this composite structure exhibits negligibly low responses to 100 ppm of NO2, H2, CO, and NH3. The heterostructure band model associated with a surface reaction model is manifested to elucidate the sensing mechanism.
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Affiliation(s)
- Chandrakalavathi Thota
- Department of Physics and Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea.
- Department of Biomedical Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
| | - C Gangadhara
- Department of Physics, The Visveswaraya Technological University, Belgavi 590018, India
| | - Dhanalakshmi Radhalayam
- Energy Storage and Conversion Laboratory, Department of Electrical Engineering, Chungnam National University, Daejeon 34134, Republic of Korea
| | - Ramu Singiri
- Department of Electronic Engineering, Gangneung-Wonju National University, Gangneung, 25457, South Korea
| | - Na-Hyun Bak
- Department of Physics and Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea.
| | - Paruchuri Kondaiah
- Department of Mechanical Engineering, Virginia Tech, Blacksburg, Virginia - 24061, USA
| | - C Ningappa
- Department of Physics, The Visveswaraya Technological University, Belgavi 590018, India
| | - Reddeppa Maddaka
- Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA.
| | - Moon-Deock Kim
- Department of Physics and Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon, 34134, Republic of Korea.
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17
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Nguyen ST, Pham KD. Theoretical prediction of the electronic structure, optical properties and contact characteristics of a type-I MoS 2/MoGe 2N 4 heterostructure towards optoelectronic devices. Dalton Trans 2024; 53:9072-9080. [PMID: 38738357 DOI: 10.1039/d4dt00829d] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Recently, the combination of two different two-dimensional (2D) semiconductors to generate van der Waals (vdW) heterostructures has emerged as an effective strategy to tailor their physical properties, paving the way for the development of next-generation devices with improved performance and functionality. In this work, we designed an MoS2/MoGe2N4 heterostructure and explored its electronic structures, optical properties and contact characteristics using first-principles calculations. The MoS2/MoGe2N4 heterostructure is predicted to be energetically, thermally and dynamically stable, indicating its feasibility for experimental synthesis in the future. The MoS2/MoGe2N4 heterostructure forms type-I band alignment, suggesting that it can be considered as a promising material for optoelectronic devices, such as light-emitting diodes, and in laser applications. Furthermore, the type-I MoS2/MoGe2N4 heterostructure has enhanced optical absorption in both the visible and ultraviolet regions. More interestingly, the electronic properties and contact characteristics of the MoS2/MoGe2N4 heterostructure can be tailored by applying in-plane biaxial strain. Under the application of compressive and tensile strains, transformations between type-I and type-II band alignments and between semiconductor and metal can be achieved in the MoS2/MoGe2N4 heterostructure. Our findings could provide useful guidance for experimental synthesis of materials based on the MoS2/MoGe2N4 heterostructure for electronic and optoelectronic applications.
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Affiliation(s)
- S T Nguyen
- Faculty of Electrical Engineering, Hanoi University of Industry, Hanoi 100000, Vietnam.
| | - K D Pham
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam.
- School of Engineering & Technology, Duy Tan University, Da Nang 550000, Vietnam
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18
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Zhao J, Wang H, Cai Y, Zhao J, Gao Z, Song YY. The Challenges and Opportunities for TiO 2 Nanostructures in Gas Sensing. ACS Sens 2024; 9:1644-1655. [PMID: 38503265 DOI: 10.1021/acssensors.4c00137] [Citation(s) in RCA: 17] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/21/2024]
Abstract
Chemiresistive gas sensors based on metal oxides have been widely applied in industrial monitoring, medical diagnosis, environmental pollutant detection, and food safety. To further enhance the gas sensing performance, researchers have worked to modify the structure and function of the material so that it can adapt to different gas types and environmental conditions. Among the numerous gas-sensitive materials, n-type TiO2 semiconductors are a focus of attention for their high stability, excellent biosafety, controllable carrier concentration, and low manufacturing cost. This Perspective first introduces the sensing mechanism of TiO2 nanostructures and composite TiO2-based nanomaterials and then analyzes the relationship between their gas-sensitive properties and their structure and composition, focusing also on technical issues such as doping, heterojunctions, and functional applications. The applications and challenges of TiO2-based nanostructured gas sensors in food safety, medical diagnosis, environmental detection, and other fields are also summarized in detail. Finally, in the context of their practical application challenges, future development technologies and new sensing concepts are explored, providing new ideas and directions for the development of multifunctional intelligent gas sensors in various application fields.
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Affiliation(s)
- Jiahui Zhao
- College of Sciences, Northeastern University, Shenyang 110004, China
| | - Haiquan Wang
- College of Sciences, Northeastern University, Shenyang 110004, China
| | - Yahui Cai
- College of Sciences, Northeastern University, Shenyang 110004, China
| | - Junjin Zhao
- College of Sciences, Northeastern University, Shenyang 110004, China
| | - Zhida Gao
- College of Sciences, Northeastern University, Shenyang 110004, China
| | - Yan-Yan Song
- College of Sciences, Northeastern University, Shenyang 110004, China
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19
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Cao Z, Zhao Y, Wu G, Cho J, Abid M, Choi M, Ó Coileáin C, Hung KM, Chang CR, Wu HC. Enhanced NO 2 Sensitivity of Vertically Stacked van der Waals Heterostructure Gas Sensor and Its Remarkable Electric and Mechanical Tunability. ACS APPLIED MATERIALS & INTERFACES 2024; 16:9495-9505. [PMID: 38334441 DOI: 10.1021/acsami.3c17194] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
Nanodevices based on van der Waals heterostructures have been predicted, and shown, to have unprecedented operational principles and functionalities that hold promise for highly sensitive and selective gas sensors with rapid response times and minimal power consumption. In this study, we fabricated gas sensors based on vertical MoS2/WS2 van der Waals heterostructures and investigated their gas sensing capabilities. Compared with individual MoS2 or WS2 gas sensors, the MoS2/WS2 van der Waals heterostructure gas sensors are shown to have enhanced sensitivity, faster response times, rapid recovery, and a notable selectivity, especially toward NO2. In combination with a theoretical model, we show that it is important to take into account created trapped states (flat bands) induced by the adsorption of gas molecules, which capture charges and alter the inherent built-in potential of van der Waals heterostructure gas sensors. Additionally, we note that the performance of these MoS2/WS2 heterostructure gas sensors could be further enhanced using electrical gating and mechanical strain. Our findings highlight the importance of understanding the effects of altered built-in potentials arising from gas molecule adsorption induced flat bands, thus offering a way to enhance the gas sensing performance of van der Waals heterostructure gas sensors.
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Affiliation(s)
- Ze Cao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Gang Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
- Department of Advanced Materials Engineering, Chung-Ang University, 4726, Seodong-daero, Daedeok-myeon, Anseong-si, Gyeonggi-do 17546, Republic of Korea
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P. R. China
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20
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Cai L, Zhang X. Sodium titanate: A proton conduction material for ppb-level NO 2 detection with near-zero power consumption. JOURNAL OF HAZARDOUS MATERIALS 2024; 462:132781. [PMID: 37852135 DOI: 10.1016/j.jhazmat.2023.132781] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 10/06/2023] [Accepted: 10/12/2023] [Indexed: 10/20/2023]
Abstract
Constrained by the traditional charge transfer sensing mechanism, it is quite challenging to fabricate NO2 sensors that simultaneously exhibit high sensitivity, rapid response/recovery, and low power consumption. Herein, sodium titanate (NTO), a layered material with abundant surface-rooted OH groups (OHR), is demonstrated to be a promising NO2 sensing material. To understand the sensing behavior of NTO, the influences of operating temperature, applied voltage, and relative humidity are investigated, and a novel OHR-enabled proton conduction sensing mechanism is proposed. The sensing process mainly involves selective NO2 adsorption on OHR, thereby lowering the activation energy for proton transportation along the NTO surface. Meanwhile, the moderate intermolecular interaction makes NO2 both easily adsorbed and desorbed at room temperature. Hence, NTO exhibits a highly sensitive, rapid, and fully recoverable response (∼5.7-1 ppm NO2 within 3 s), wide detection range (1 ppb-20 ppm), good stability (>2 months), and near-zero power consumption (0.5 nW). Finally, we demonstrate that NTO has an excellent practical indoor/outdoor NO2 sensing ability. This work offers a new pathway to resolve the inherent conflicts in available NO2 sensors by using NTO via the OHR-enabled proton conduction sensing mechanism, which may also provide insight into designing high-performance sensors for other gases.
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Affiliation(s)
- Lubing Cai
- Department of Chemistry, College of Sciences, Northeastern University, Shenyang, Liaoning 110819, People's Republic of China
| | - Xuemin Zhang
- Department of Chemistry, College of Sciences, Northeastern University, Shenyang, Liaoning 110819, People's Republic of China.
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21
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Gan W, Jiang M, Liu Y, Ming L, Xiao R, Tang X, Liu Y, Long D, Zhao C, Li H. Van der Waals heterostructure gas sensors based on narrow-wide bandgap semiconductors for superior sensitivity. NANOTECHNOLOGY 2023; 35:05LT03. [PMID: 37879318 DOI: 10.1088/1361-6528/ad06d2] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2023] [Accepted: 10/25/2023] [Indexed: 10/27/2023]
Abstract
Achieving high sensitivity in gas sensors is crucial for the precise detection of toxic agents. However, this can be challenging as it requires gas sensors to possess both a high response signal and low electrical noise simultaneously, which seems controversial as it necessitates adopting semiconductors with different bandgaps. Herein, we demonstrate the superior sensitivity of 2D molybdenum disulfide (MoS2)/tellurium (Te) van der Waals heterostructure (vdWH) gas sensors fabricated by combining narrow-bandgap (Te) and wide-bandgap (MoS2) semiconductors. The as-fabricated MoS2/Te vdWH gas sensors exhibit excellent sensitivity that is unavailable for sensors based on its individual counterparts. The response toward 50 ppm NH3is improved by two and six times compared to the individual MoS2and Te gas sensors, respectively. In addition, a high signal-to-noise ratio of ∼350 and an ultralow limit of detection of ∼2 ppb are achieved. These results outperform most previously reported gas sensors due to the efficient modulation of the barrier height of the MoS2/Te p-n junction as well as the synergistic effect benefiting from the low electric noise of the narrow-bandgap Te and high response signal of the wide-bandgap MoS2. Our work provides an insight into utilizing vdWHs based on narrow-wide bandgap semiconductors for developing highly sensitive gas sensors.
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Affiliation(s)
- Wei Gan
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Ming Jiang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Yucheng Liu
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Li Ming
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Ruichun Xiao
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Xi Tang
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Yu Liu
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Dunxu Long
- Stony Brook Institute at Anhui University, Anhui University, Hefei 230039, People's Republic of China
| | - Changhui Zhao
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
| | - Hui Li
- Institute of Physical Science and Information Technology and Information Materials and Intelligent Sensing Laboratory of Anhui Province, Anhui University, Hefei 230601, People's Republic of China
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22
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Tan L, Liu X, Wu P, Cao L, Li W, Li A, Wang Z, Gu H. TiO 2-modified MoS 2 monolayer films enable sensitive NH 3 sensing at room temperature. NANOSCALE 2023; 15:14514-14522. [PMID: 37609839 DOI: 10.1039/d3nr02469e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The research and development of high-performance NH3 sensors are of great significance for environment monitoring and disease diagnosis applications. Two-dimensional (2D) MoS2 nanomaterials have exhibited great potential for building room-temperature (RT) NH3 sensors but still suffer from relatively low sensitivity. Herein, the TiO2-modified monolayer MoS2 films with controllable TiO2 loading contents are fabricated by a facile approach. A remarkable enhancement in the RT NH3 sensing performance is achieved after the n-n hetero-compositing of the TiO2/MoS2 system. The device with 95% surface coverage of TiO2 shows enhanced sensor response, low detection limit (0.5 ppm), wide detection range (0.5-1000 ppm), good repeatability, and superior selectivity against other gases. In situ Kelvin potential force microscopy results revealed that the TiO2 modification not only improved the surface reactivity of the sensing layers but also contributed to the NH3 sensing performance by serving as the "gas-gating" layers that modulated the electron depletion layer and the conductivity of the MoS2 films. Such an n-n hetero-compositing strategy can provide a simple and cost-effective approach for developing high-performance NH3 sensors based on 2D semiconductors.
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Affiliation(s)
- Lun Tan
- Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy - Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, P.R. China.
| | - Xianzhen Liu
- Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy - Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, P.R. China.
| | - Peng Wu
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, P.R. China.
| | - Liwei Cao
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, P.R. China.
| | - Wei Li
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, P.R. China.
| | - Ang Li
- Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing, 100124, P.R. China.
| | - Zhao Wang
- Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy - Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, P.R. China.
| | - Haoshuang Gu
- Hubei Engineering Research Center for Safety Detection and Control of Hydrogen Energy - Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices, School of Microelectronics, Hubei University, Wuhan 430062, P.R. China.
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23
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Abdellatif SO, Moustafa A, Khalid A, Ghannam R. Integration of Capacitive Pressure Sensor-on-Chip with Lead-Free Perovskite Solar Cells for Continuous Health Monitoring. MICROMACHINES 2023; 14:1676. [PMID: 37763839 PMCID: PMC10536692 DOI: 10.3390/mi14091676] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/30/2023] [Revised: 08/24/2023] [Accepted: 08/25/2023] [Indexed: 09/29/2023]
Abstract
The increasing prevalence of hypertension necessitates continuous blood pressure monitoring. This can be safely and painlessly achieved using non-invasive wearable electronic devices. However, the integration of analog, digital, and power electronics into a single system poses significant challenges. Therefore, we demonstrated a comprehensive multi-scale simulation of a sensor-on-chip that was based on a capacitive pressure sensor. Two analog interfacing circuits were proposed for a full-scale operation ranging from 0 V to 5 V, enabling efficient digital data processing. We also demonstrated the integration of lead-free perovskite solar cells as a mechanism for self-powering the sensor. The proposed system exhibits varying sensitivity from 1.4 × 10-3 to 0.095 (kPa)-1, depending on the pressure range of measurement. In the most optimal configuration, the system consumed 50.5 mW, encompassing a 6.487 mm2 area for the perovskite cell and a CMOS layout area of 1.78 × 1.232 mm2. These results underline the potential for such sensor-on-chip designs in future wearable health-monitoring technologies. Overall, this paper contributes to the field of wearable health-monitoring technologies by presenting a novel approach to self-powered blood pressure monitoring through the integration of capacitive pressure sensors, analog interfacing circuits, and lead-free perovskite solar cells.
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Affiliation(s)
- Sameh O. Abdellatif
- The Electrical Engineering Department, Faculty of Engineering and FabLab, Centre for Emerging Learning Technologies (CELT), The British University in Egypt (BUE), Cairo 11387, Egypt; (S.O.A.); (A.M.); (A.K.)
| | - Afaf Moustafa
- The Electrical Engineering Department, Faculty of Engineering and FabLab, Centre for Emerging Learning Technologies (CELT), The British University in Egypt (BUE), Cairo 11387, Egypt; (S.O.A.); (A.M.); (A.K.)
| | - Ahmed Khalid
- The Electrical Engineering Department, Faculty of Engineering and FabLab, Centre for Emerging Learning Technologies (CELT), The British University in Egypt (BUE), Cairo 11387, Egypt; (S.O.A.); (A.M.); (A.K.)
| | - Rami Ghannam
- James Watt School of Engineering, University of Glasgow, Glasgow G12 8QQ, UK
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24
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Liu X, Niu Y, Jin D, Zeng J, Li W, Wang L, Hou Z, Feng Y, Li H, Yang H, Lee YK, French PJ, Wang Y, Zhou G. Patching sulfur vacancies: A versatile approach for achieving ultrasensitive gas sensors based on transition metal dichalcogenides. J Colloid Interface Sci 2023; 649:909-917. [PMID: 37390538 DOI: 10.1016/j.jcis.2023.06.092] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/27/2023] [Revised: 06/07/2023] [Accepted: 06/14/2023] [Indexed: 07/02/2023]
Abstract
Transition metal dichalcogenides (TMDCs) garner significant attention for their potential to create high-performance gas sensors. Despite their favorable properties such as tunable bandgap, high carrier mobility, and large surface-to-volume ratio, the performance of TMDCs devices is compromised by sulfur vacancies, which reduce carrier mobility. To mitigate this issue, we propose a simple and universal approach for patching sulfur vacancies, wherein thiol groups are inserted to repair sulfur vacancies. The sulfur vacancy patching (SVP) approach is applied to fabricate a MoS2-based gas sensor using mechanical exfoliation and all-dry transfer methods, and the resulting 4-nitrothiophenol (4NTP) repaired molybdenum disulfide (4NTP-MoS2) is prepared via a sample solution process. Our results show that 4NTP-MoS2 exhibits higher response (increased by 200 %) to ppb-level NO2 with shorter response/recovery times (61/82 s) and better selectivity at 25 °C compared to pristine MoS2. Notably, the limit of detection (LOD) toward NO2 of 4NTP-MoS2 is 10 ppb. Kelvin probe force microscopy (KPFM) and density functional theory (DFT) reveal that the improved gas sensing performance is mainly attributed to the 4NTP-induced n-doping effect on MoS2 and the corresponding increment of surface absorption energy to NO2. Additionally, our 4NTP-induced SVP approach is universal for enhancing gas sensing properties of other TMDCs, such as MoSe2, WS2, and WSe2.
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Affiliation(s)
- Xiangcheng Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Yue Niu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China; School of Physical Sciences, Great Bay University, Dongguan 523000, PR China.
| | - Duo Jin
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Wanjiang Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Lirong Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Zhipeng Hou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology & Institute for Advanced Materials, South China Academy of Advanced Optoelectronics South China Normal University, Guangzhou 510006, PR China
| | - Yancong Feng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
| | - Haihong Yang
- Department of Thoracic Oncology, State Key Laboratory of Respiratory Diseases, The First Affiliated Hospital of Guangzhou Medical University, Guangzhou 510006, PR China
| | - Yi-Kuen Lee
- Department of Mechanical & Aerospace Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong Special Administrative Region
| | - Paddy J French
- BE Laboratory, EWI, Delft University of Technology, Delft 2628CD, the Netherlands
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China.
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, PR China
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25
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Chen YJ, Liu M, Chen J, Huang X, Li QH, Ye XL, Wang GE, Xu G. Dangling bond formation on COF nanosheets for enhancing sensing performances. Chem Sci 2023; 14:4824-4831. [PMID: 37181787 PMCID: PMC10171198 DOI: 10.1039/d3sc00562c] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Accepted: 04/06/2023] [Indexed: 05/16/2023] Open
Abstract
Dangling bond formation for COF materials in a rational manner is an enormous challenge, especially through post-treatment which is a facile strategy while has not been reported yet. In this work, a "chemical scissor" strategy is proposed for the first time to rationally design dangling bonds in COF materials. It is found that Zn2+ coordination in post-metallization of TDCOF can act as an "inducer" which elongates the target bond and facilitates its fracture in hydrolyzation reactions to create dangling bonds. The number of dangling bonds is well-modulated by controlling the post-metallization time. Zn-TDCOF-12 shows one of the highest sensitivities to NO2 in all reported chemiresistive gas sensing materials operating under visible light and room temperature. This work opens an avenue to rationally design a dangling bond in COF materials, which could increase the active sites and improve the mass transport in COFs to remarkably promote their various chemical applications.
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Affiliation(s)
- Yong-Jun Chen
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing 100049 P. R. China
| | - Ming Liu
- Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu 611731 P. R. China
| | - Jie Chen
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
| | - Xin Huang
- Jiangsu Key Laboratory of Biofunctional Material, School of Chemistry and Materials Science, Nanjing Normal University Nanjing 210023 P. R. China
| | - Qiao-Hong Li
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
| | - Xiao-Liang Ye
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
| | - Guan-E Wang
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
| | - Gang Xu
- State Key Laboratory of Structural Chemistry, Fujian Provincial Key Laboratory of Materials and Techniques Toward Techniques Toward Hydrogen Energy, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences (CAS) Fuzhou Fujian 350002 P. R. China
- University of Chinese Academy of Sciences (UCAS) Beijing 100049 P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China Fuzhou Fujian 350108 P. R. China
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26
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 36] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/30/2022] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department
of Chemistry, Faculty of Science, University
of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
- Functional
Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department
of Materials Science and Engineering, Pohang
University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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27
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Mohammadzadeh MR, Hasani A, Jaferzadeh K, Fawzy M, De Silva T, Abnavi A, Ahmadi R, Ghanbari H, Askar A, Kabir F, Rajapakse R, Adachi MM. Unique Photoactivated Time-Resolved Response in 2D GeS for Selective Detection of Volatile Organic Compounds. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2205458. [PMID: 36658730 PMCID: PMC10074048 DOI: 10.1002/advs.202205458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/20/2022] [Revised: 12/19/2022] [Indexed: 06/17/2023]
Abstract
Volatile organic compounds (VOCs) sensors have a broad range of applications including healthcare, process control, and air quality analysis. There are a variety of techniques for detecting VOCs such as optical, acoustic, electrochemical, and chemiresistive sensors. However, existing commercial VOC detectors have drawbacks such as high cost, large size, or lack of selectivity. Herein, a new sensing mechanism is demonstrated based on surface interactions between VOC and UV-excited 2D germanium sulfide (GeS), which provides an effective solution to distinguish VOCs. The GeS sensor shows a unique time-resolved electrical response to different VOC species, facilitating identification and qualitative measurement of VOCs. Moreover, machine learning is utilized to distinguish VOC species from their dynamic response via visualization with high accuracy. The proposed approach demonstrates the potential of 2D GeS as a promising candidate for selective miniature VOCs sensors in critical applications such as non-invasive diagnosis of diseases and health monitoring.
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Affiliation(s)
| | - Amirhossein Hasani
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Keyvan Jaferzadeh
- Department of Computer Science and Software EngineeringConcordia UniversityMontrealQuebecH3G 1M8Canada
| | - Mirette Fawzy
- Department of PhysicsSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Thushani De Silva
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Amin Abnavi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Ribwar Ahmadi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Hamidreza Ghanbari
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Abdelrahman Askar
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Fahmid Kabir
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - R.K.N.D. Rajapakse
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
| | - Michael M. Adachi
- School of Engineering ScienceSimon Fraser UniversityBurnabyBritish ColumbiaV5A 1S6Canada
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28
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Wu Q, Feng Z, Wang Z, Peng Z, Zhang L, Li Y. Visual chemiresistive dual-mode sensing platform based on SnS2/Ti3C2 MXene Schottky junction for acetone detection at room temperature. Talanta 2023. [DOI: 10.1016/j.talanta.2022.124063] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
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29
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Li Y, Liu Y, Lu Y, Liu Z, Sui C, Wang Y, Yang L, Liu F, Sun P, Liu F, Lu G. Preparation of BiOI-Functionalized ZnO Nanorods for Ppb-Level NO 2 Detection at Room Temperature. ACS Sens 2022; 7:3915-3922. [PMID: 36417704 DOI: 10.1021/acssensors.2c01988] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/24/2022]
Abstract
Light activation is an effective method to improve sensor performance at room temperature (RT). This work realized the effective detection of trace-level NO2 at RT under visible light by combining ZnO with the excellent photocatalyst BiOI. A 1.5 atom % BiOI-ZnO-based sensor under 520 nm light exhibited optimal sensing properties with the maximum responses (13.9 to 1 ppm NO2), fast response/recovery time (66 s/47 s to 1 ppm), and a low detection limit of 25 ppb (theoretically 0.34 ppb). In the meantime, the sensor also possessed excellent selectivity, repeatability, and stability. The excellent properties were attributed to the high concentration of oxygen vacancies and the prolonged lifetime of photogenerated carriers. In addition, the observed photovoltaic effect of the sensor at RT indicated that the sensor held application prospects in the photovoltaic self-power field.
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Affiliation(s)
- Yueyue Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Yuanzhen Liu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Yi Lu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Ziqi Liu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Chengming Sui
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Yilin Wang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Lin Yang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Fengmin Liu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China
| | - Peng Sun
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China.,International Center of Future Science, Jilin University, Changchun130012, China
| | - Fangmeng Liu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China.,International Center of Future Science, Jilin University, Changchun130012, China
| | - Geyu Lu
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Advanced Gas Sensor, Jilin Province, College of Electronic Science and Engineering, Jilin University, Changchun130012, China.,International Center of Future Science, Jilin University, Changchun130012, China
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30
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Liu J, Huang H, Wu C, Yang S. Dual-mode acceleration sensor of downhole drilling tools based on triboelectric nanogenerator. THE REVIEW OF SCIENTIFIC INSTRUMENTS 2022; 93:125001. [PMID: 36586941 DOI: 10.1063/5.0121965] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2022] [Accepted: 11/06/2022] [Indexed: 06/17/2023]
Abstract
Downhole vibration is important for the judgment of the drilling tool conditions and the formulation of drilling technology. To meet the demand of downhole drilling tools acceleration measurement, this research proposes a self-powered acceleration sensor with two working modes based on the triboelectric nanogenerator, namely, mode A, which is based on the voltage response acceleration trend and mode B, which judges the acceleration based on the output pulses. Test results show that the acceleration measurement range is 0-11 m/s2, the maximum output voltage amplitude can reach 15.3 V, the working environment temperature is less than 250 °C, the working environment humidity is less than 90%, and long-time working has almost no effect on the output voltage of the sensor. In addition, since the sensor will generate electrical energy during the vibration process, the power generation performance of the sensor has been tested. And the results show that the maximum output power of the sensor is 0.18 µW when a 1000 MΩ load is connected in series. Compared to traditional downhole sensors, the sensor is more flexible, because it can work normally at high temperatures and has the potential for being self-powered.
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Affiliation(s)
- Jinrun Liu
- Faculty of Mechanical and Electronic Information, China University of Geosciences (Wuhan), Wuhan 430074, China
| | - He Huang
- PowerChina Hubei Electric Engineering Co., Ltd., Wuhan 430040, China
| | - Chuan Wu
- Faculty of Mechanical and Electronic Information, China University of Geosciences (Wuhan), Wuhan 430074, China
| | - Shuo Yang
- Faculty of Mechanical and Electronic Information, China University of Geosciences (Wuhan), Wuhan 430074, China
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31
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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32
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Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU. Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe 2 van der Waals Heterostructures for Excellent Photodetector and NO 2 Gas Sensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3713. [PMID: 36364489 PMCID: PMC9658387 DOI: 10.3390/nano12213713] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/19/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe2) heterojunction. The prepared Gr/ReSe2-HS demonstrated an excellent mobility of 380 cm2/Vs, current on/off ratio ~ 104, photoresponsivity (R ~ 74 AW-1 @ 82 mW cm-2), detectivity (D* ~ 1.25 × 1011 Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe2 device (mobility = 36 cm2 V-1s-1, Ion/Ioff ratio = 1.4 × 105-1.8 × 105, R = 11.2 AW-1, D* = 1.02 × 1010, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe2 (45 meV at Vbg = 40 V) and Gr/ReSe2-HS (9.02 meV at Vbg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO2 at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe2-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Adeela Rehman
- Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Othman Hakami
- Department of Chemistry, Faculty of Science, Jazan University, Jazan, Saudi Arabia
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Mohammed A. Amin
- Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
| | - Muhammad Ikram
- Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore, Lahore 54000, Punjab, Pakistan
| | - Supriya A. Patil
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
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Tian XH, Zhou TY, Meng Y, Zhao YM, Shi C, Hou PX, Zhang LL, Liu C, Cheng HM. A Flexible NO 2 Gas Sensor Based on Single-Wall Carbon Nanotube Films Doped with a High Level of Nitrogen. Molecules 2022; 27:6523. [PMID: 36235060 PMCID: PMC9573668 DOI: 10.3390/molecules27196523] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/18/2022] [Revised: 09/25/2022] [Accepted: 09/28/2022] [Indexed: 11/06/2022] Open
Abstract
Carbon nanotubes (CNTs) are considered a promising candidate for the detection of toxic gases because of their high specific surface area and excellent electrical and mechanical properties. However, the detecting performance of CNT-based detectors needs to be improved because covalently bonded CNTs are usually chemically inert. We prepared a nitrogen-doped single-wall CNT (SWCNT) film by means of gas-phase fluorination followed by thermal annealing in NH3. The doped nitrogen content could be changed in the range of 2.9-9.9 at%. The N-doped SWCNT films were directly used to construct flexible and transparent gas sensors, which can work at a low voltage of 0.01 V. It was found that their NO2 detection performance was closely related to their nitrogen content. With an optimum nitrogen content of 9.8 at%, a flexible sensor had a detection limit of 500 ppb at room temperature with good cycling ability and stability during bending.
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Affiliation(s)
- Xiao-Han Tian
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Tian-Ya Zhou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Yu Meng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Yi-Ming Zhao
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Chao Shi
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Li-Li Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Hui-Ming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
- Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
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Fan JL, Hu XF, Qin WW, Liu ZY, Liu YS, Gao SJ, Tan LP, Yang JL, Luo LB, Zhang W. UV-light-assisted gas sensor based on PdSe 2/InSe heterojunction for ppb-level NO 2 sensing at room temperature. NANOSCALE 2022; 14:13204-13213. [PMID: 36047737 DOI: 10.1039/d2nr03881a] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The fabrication of van der Waals (vdWs) heterostructures mainly extends to two-dimensional (2D) materials. Nevertheless, the current processes for obtaining high-quality 2D films are mainly exfoliated from their bulk counterparts or by high-temperature chemical vapor deposition (CVD), which limits industrial production and is often accompanied by defects. Herein, we first fabricated the type-II p-PdSe2/n-InSe vdWs heterostructure using the ultra-high vacuum laser molecular beam epitaxy (LMBE) technique combined with the vertical 2D stacking strategy, which is reproducible and suitable for high-volume manufacturing. This work found that the introduction of 365 nm UV light illumination can significantly improve the electrical transport properties and NO2 sensing performance of the PdSe2/InSe heterojunction-based device at room temperature (RT). The detailed studies confirm that the sensor based on the PdSe2/InSe heterojunction delivers the comparable sensitivity (Ra/Rg = ∼2.6 at 10 ppm), a low limit of detection of 52 ppb, and excellent selectivity for NO2 gas under UV light illumination, indicating great potential for NO2 detection. Notably, the sensor possesses fast response and full recovery properties (275/1078 s) compared to the results in the dark. Furthermore, the mechanism of enhanced gas sensitivity was proposed based on the energy band alignment of the PdSe2/InSe heterojunction with the assistance of investigating the surface potential variations. This work may pave the way for the development of high-performance, room-temperature gas sensors based on 2D vdWs heterostructures through the LMBE technique.
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Affiliation(s)
- Jin-Le Fan
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Xue-Feng Hu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Wei-Wei Qin
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Zhi-Yuan Liu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Yan-Song Liu
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Shou-Jing Gao
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Li-Ping Tan
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Ji-Lei Yang
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
| | - Lin-Bao Luo
- School of Microelectronics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China
| | - Wei Zhang
- Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronics Engineering, Hefei University of Technology, Hefei 230009, Anhui, P. R. China.
- Academy of Optoelectronic Technology, Special Display and Imaging Technology Innovation Center of Anhui Province, Hefei University of Technology, Hefei, Anhui Province, 230009, P. R. China
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Wang B, Li H, Tan H, Gu Y, Chen L, Ji L, Sun Z, Sun Q, Ding S, Zhang DW, Zhu H. Gate-Modulated High-Response Field-Effect Transistor-Type Gas Sensor Based on the MoS 2/Metal-Organic Framework Heterostructure. ACS APPLIED MATERIALS & INTERFACES 2022; 14:42356-42364. [PMID: 36074810 DOI: 10.1021/acsami.2c11359] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The high surface-to-volume ratio and decent material properties of two-dimensional (2D) transition metal dichalcogenides (TMDs) make them advantageous as an active channel in field-effect transistor (FET)-type gas sensing devices. However, most existing TMD gas sensors are based on a two-terminal resistance-type structure and suffer from low responsivity and slow response, which has urged materials optimization as well as device engineering. Metal-organic frameworks (MOFs) have a large number of ordered binding sites in the pores that can specifically bind to gas molecules and can be decorated on TMD surfaces to enhance gas sensing capabilities. In this work, we successfully realize the FET-type gas sensor with MoS2-MOF as the channel. The fabricated gas sensor exhibits enhanced NH3 sensing performance (22.475 times higher in responsivity) as compared to the device with a bare MoS2 channel. In addition, the FET-type gas sensor geometry enables effective tuning of sensitivity through electrical gating based on the modulation over the channel carrier concentration. Furthermore, the dependence of responsivity on the MoS2 thickness is investigated as well to achieve an in-depth understanding of the electrical modulation mechanism of the MOF-decorated MoS2 gas sensors. The demonstrated results can pave an attractive pathway toward the realization of advanced high-response and tunable TMD-based gas sensing devices.
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Affiliation(s)
- Boran Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hongbin Li
- Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, China
| | - Haotian Tan
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Yi Gu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Zhengzong Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Qingqing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Shijin Ding
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
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36
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Zhu H, Shen Y, Zhang Q, Fang Q, Chen L, Yang X, Wang B. Recycled Bifunctional Heterostructure Material: g-GaN/SnS for Photocatalytic Decomposition of Water and Efficient Detection of NO 2. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2022; 38:10886-10892. [PMID: 36001800 DOI: 10.1021/acs.langmuir.2c01725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Recently, the energy crisis and environmental pollution problems have become increasingly severe. There is an urgent need to develop a class of multifunctional materials that can both produce clean energy and detect harmful gases. Herein, we propose a g-GaN/SnS heterostructure and explored its dual-optimal performance in photocatalytic hydrogen production and gas detection. Our results demonstrated that the g-GaN/SnS heterostructure has a suitable type II band alignment and excellent absorption in the visible range, which both indicate its potential application in photocatalysis. Furthermore, when the g-GaN/SnS heterostructure acted as a gas detection material, it was consistently susceptible to NO2 gas molecules, according to charge transfer. Additionally, it has a very suitable material recovery time (∼0.5 h) when used for NO2 detection, illustrating the recyclability of the material. Interestingly, the applied electric field of -0.4 V/Å can greatly increase the absorption coefficient in the visible range to 150% of the original. Also, the applied electric field of 0.6 V/Å can substantially enhance the gas detection sensitivity by 27% compared to the case without the electric field. Thus, the g-GaN/SnS heterostructure we proposed not only has the advantage of being bifunctional but also has the potential to be recycled.
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Affiliation(s)
- Hua Zhu
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
| | - Yang Shen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
- School of Materials Science and Engineering, Zhejiang University, Zhejiang 310027, China
| | - Qihao Zhang
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
| | - Qianglong Fang
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
| | - Liang Chen
- Institute of Optoelectronics Technology, China Jiliang University, Hangzhou 310018, China
| | - Xiaodong Yang
- Key Laboratory of Ecophysics and Department of Physics, Shihezi University, Xinjiang 832003, China
| | - Baolin Wang
- College of Physical Science and Technology, Nanjing Normal University, Nanjing 210023, China
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37
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Zhang L, Li Z, Yang J, Zhou J, Zhang Y, Zhang H, Li Y. A Fully Integrated Flexible Tunable Chemical Sensor Based on Gold-Modified Indium Selenide Nanosheets. ACS Sens 2022; 7:1183-1193. [PMID: 35380788 DOI: 10.1021/acssensors.2c00281] [Citation(s) in RCA: 15] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/16/2023]
Abstract
In this work, a novel light-modulated bifunctional gas sensor based on Au nanoparticles-modified 2D InSe nanosheets was demonstrated. The prepared sensor displayed a reversible and extremely high response for recognition of nitrogen dioxide (NO2) under visible-light illumination. The sensitivity (1192%) was about 10 times higher than that under dark condition, and the limit of detection (LOD) was 0.17 ppb. In contrast, when sensing ammonia (NH3), higher sensitivity and selectivity were obtained in darkness rather than in light, with sensitivity and LOD of 11% and 0.2 ppm. Furthermore, the sensor possesses decent stability, repeatability, and anti-interference ability. The tunable sensing behavior with light modulation has been clearly studied with the help of density functional theory. A new principle called "carrier storage box" of Au nanoparticles was proposed to explain the change in surface state of InSe under light modulation. Finally, the prepared sensor has been successfully applied to construct a fully integrated wearable device to measure NH3 and NO2 in ambient environment. In all, this work provides a highly competitive gas detection method and paves the way for designing 2D materials-based optoelectronic devices with tunable and multifunctional features.
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Affiliation(s)
- Lu Zhang
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
| | - Zhongjun Li
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Jiao Yang
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Jia Zhou
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
| | - Yuan Zhang
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Han Zhang
- Department of Neurosurgery, Shenzhen Key Laboratory of Neurosurgery, the First Affiliated Hospital of Shenzhen University/Shenzhen Second People’s Hospital; SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China
| | - Yingchun Li
- School of Science, Harbin Institute of Technology, Shenzhen 518055, China
- School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
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38
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Pasupuleti KS, Reddeppa M, Chougule SS, Bak NH, Nam DJ, Jung N, Cho HD, Kim SG, Kim MD. High performance langasite based SAW NO 2 gas sensor using 2D g-C 3N 4@TiO 2 hybrid nanocomposite. JOURNAL OF HAZARDOUS MATERIALS 2022; 427:128174. [PMID: 34995998 DOI: 10.1016/j.jhazmat.2021.128174] [Citation(s) in RCA: 28] [Impact Index Per Article: 9.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Revised: 12/22/2021] [Accepted: 12/27/2021] [Indexed: 06/14/2023]
Abstract
Nitrogen dioxide (NO2) gas has emerged as a severe air pollutant that causes damages to the environment, human life and global ecosystems etc. However, the currently available NO2 gas sensors suffers from insufficient selectivity, sensitivity and long response times that impeding their practical applicability for room temperature (RT) gas sensing. Herein, we report a high performance langasite (LGS) based surface acoustic wave (SAW) RT NO2 gas sensor using 2-dimensional (2D) g-C3N4@TiO2 nanoplates (NP) with {001} facets hybrid nanocomposite as a chemical interface. The g-C3N4@TiO2 NP/LGS SAW device showed a significant negative frequency shift (∆f) of ~19.8 kHz which is 2.4 fold higher than that of the pristine TiO2 NP/LGS SAW sensor toward 100 ppm of NO2 at RT. In addition, the hybrid SAW device fascinatingly exhibited a fast response/recovery time with a low detection limit, high selectivity, and an effective long term stability toward NO2 gas. It also exhibited an enhanced and robust negative frequency shifts under various relative humidity conditions ranging from 20% to 80% for 100 ppm of NO2 gas. The high performance of the g-C3N4 @TiO2 NP/LGS SAW gas sensor can be attributed to the enhanced mass loading effect which was assisted by the large surface area, oxygen vacancies, OH and amine functional groups of the n-n hybrid heterojunction of g-C3N4@TiO2 NP that provide abundant active sites for the adsorption and diffusion of NO2 gas molecules. These results emphasize the significance of the integration of 2D materials with metal oxides for SAW based RT gas sensing technology holds great promise in environmental protection.
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Affiliation(s)
| | - Maddaka Reddeppa
- Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - S S Chougule
- Graduate School of Energy Science and Technology (GEST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Na-Hyun Bak
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Dong-Jin Nam
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Namgee Jung
- Graduate School of Energy Science and Technology (GEST), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea
| | - Hak Dong Cho
- Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea
| | - Song-Gang Kim
- Department of Information and Communications, Joongbu University, 305 Donghen-ro, Goyang, Kyunggi-do 10279, Republic of Korea
| | - Moon-Deock Kim
- Department of Physics, Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea; Institute of Quantum Systems (IQS), Chungnam National University, 99 Daehak-ro, Yuseong-gu, Daejeon 34134, Republic of Korea.
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Wang B, Gu Y, Chen L, Ji L, Zhu H, Sun Q. Gas sensing devices based on two-dimensional materials: a review. NANOTECHNOLOGY 2022; 33:252001. [PMID: 35290973 DOI: 10.1088/1361-6528/ac5df5] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
Gas sensors have been widely utilized penetrating every aspect of our daily lives, such as medical industry, environmental safety testing, and the food industry. In recent years, two-dimensional (2D) materials have shown promising potential and prominent advantages in gas sensing technology, due to their unique physical and chemical properties. In addition, the ultra-high surface-to-volume ratio and surface activity of the 2D materials with atomic-level thickness enables enhanced absorption and sensitivity. Till now, different gas sensing techniques have been developed to further boost the performance of 2D materials-based gas sensors, such as various surface functionalization and Van der Waals heterojunction formation. In this article, a comprehensive review of advanced gas sensing devices is provided based on 2D materials, focusing on two sensing principles of charge-exchange and surface oxygen ion adsorption. Six types of typical gas sensor devices based on 2D materials are introduced with discussion of latest research progress and future perspectives.
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Affiliation(s)
- Boran Wang
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Yi Gu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Lin Chen
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Li Ji
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Hao Zhu
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
| | - Qingqing Sun
- State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China
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40
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Ma Z, Wang Z, Gao L. Light-Assisted Enhancement of Gas Sensing Property for Micro-Nanostructure Electronic Device: A Mini Review. Front Chem 2022; 9:811074. [PMID: 35004627 PMCID: PMC8740134 DOI: 10.3389/fchem.2021.811074] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/08/2021] [Accepted: 11/24/2021] [Indexed: 11/22/2022] Open
Abstract
In recent years, gas sensing electronic devices have always attracted wide attention in the field of environment, industry, aviation and others. In order to improve the gas sensing properties, many micro- and nano-fabrication technologies have been proposed and investigated to develop high-performance gas sensing devices. It is worth noting that light irradiation is an effective strategy to enhance gas sensitivity, shorten the response and recovery time, reduce operating temperature. In this review, firstly, the latest research advances of gas sensors based on different micro-nanostructure materials under UV light and visible light activation is introduced. Then, the gas sensing mechanism of light-assisted gas sensor is discussed in detail. Finally, this review describes the present application of gas sensors with improved properties under light activation assisted conditions and the perspective of their applications.
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Affiliation(s)
- Zongtao Ma
- State Key Laboratory of Reliability and Intelligence Electrical Equipment, Hebei University of Technology, Tianjin, China
| | - Ziying Wang
- National Engineering Research Center for Technological Innovation Method and Tool, School of Mechanical Engineering, Hebei University of Technology, Tianjin, China.,School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
| | - Lingxiao Gao
- National Engineering Research Center for Technological Innovation Method and Tool, School of Mechanical Engineering, Hebei University of Technology, Tianjin, China.,School of Electronics and Information Engineering, Hebei University of Technology, Tianjin, China
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41
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Liu W, Zeng J, Gao Y, Li H, Rooij NFD, Umar A, Algarni H, Wang Y, Zhou G. Charge transfer driven by redox dye molecules on graphene nanosheets for room-temperature gas sensing. NANOSCALE 2021; 13:18596-18607. [PMID: 34730592 DOI: 10.1039/d1nr04641a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Special functional groups to modify the surface of graphene have received much attention since they enable the charge transfer enhancement, thus realizing gas-sensing at room temperature. In this work, three typical redox dye molecules, methylene blue (MB), indigo carmine (IC) and anthraquinone-2-sulfonate (AQS), were selected to be supramolecularly assembled with reduced graphene oxide (rGO), respectively. Remarkably, three graphene-based materials AQS-rGO (response = 3.2, response time = 400 s), IC-rGO (response = 4.3, response time = 300 s) and MB-rGO (response = 7.1, response time = 100 s) exhibited excellent sensitivity and short response time toward 10 ppm NO2 at room temperature. The corresponding NO2 sensing mechanism of the obtained materials was further investigated by cyclic voltammetry (CV) measurements. CV was conducted to measure the anodic peak potential (Epa) of three redox dyes. Interestingly, it is obvious that the Epa values were positively correlated with the gas sensitivity and response time of the three materials. To explore the mechanism, UV-vis spectroscopy was adopted to analyze the lowest unoccupied molecular orbitals (LUMOs) of three redox dye molecules. The results show that the oxidation abilities of three redox dyes were also positively correlated with the gas sensitivity and response time of three corresponding graphene-based materials.
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Affiliation(s)
- Wenbo Liu
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Junwei Zeng
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Yixun Gao
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Hao Li
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Nicolaas Frans de Rooij
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Ahmad Umar
- Promising Centre for Sensors and Electronic Devices, Department of Chemistry, Faculty of Science and Arts, Najran University, Najran, 11001, Kingdom of Saudi Arabia
| | - Hamed Algarni
- Department of Physics, King Khalid University, Abha, 61421, Kingdom of Saudi Arabia
| | - Yao Wang
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
| | - Guofu Zhou
- Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China.
- National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou, 510006, P. R. China
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Adamu BI, Chen P, Chu W. Role of nanostructuring of sensing materials in performance of electrical gas sensors by combining with extra strategies. NANO EXPRESS 2021. [DOI: 10.1088/2632-959x/ac3636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/12/2022]
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