Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors

Unveiling Crucial Chemical Processing Parameters Influencing the Performance of Solution-Processed Inorganic Thermoelectric Materials

Production of thermoelectric materials from solution-processed particles involves the synthesis of particles, their purification and densification into pelletized material. Chemical changes that occur during each one of these steps render them performance determining. Particularly the purification steps, bypassed in conventional solid-state synthesis, are the cause for large discrepancies among similar solution-processed materials. In present work, the investigation focuses on a water-based surfactant free solution synthesis of SnSe, a highly relevant thermoelectric material. We show and rationalize that the number of leaching steps, purification solvent, annealing, and annealing atmosphere have significant influence on the Sn : Se ratio and impurity content in the powder. Such compositional changes that are undetectable by conventional characterization techniques lead to distinct consolidated materials with different types and concentration of defects. Additionally, the profound effect on their transport properties is demonstrated. We emphasize that understanding the chemistry and identifying key chemical species and their role throughout the process is paramount for optimizing material performance. Furthermore, we aim to demonstrate the necessity of comprehensive reporting of these steps as a standard practice to ensure material reproducibility.

Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications

The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.

Enhanced Density of States Facilitates High Thermoelectric Performance in Solution-Grown Ge- and In-Codoped SnSe Nanoplates

SnSe single crystals have gained great interest due to their excellent thermoelectric performance. However, polycrystalline SnSe is greatly desired due to facile processing, machinability, and scale-up application. Here, we report an outstanding high average ZT of 0.88 as well as a high peak ZT of 1.92 in solution-processed SnSe nanoplates. Nanosized boundaries formed by nanoplates and lattice strain created by lattice dislocations and stacking faults effectively scatter heat-carrying phonons, resulting in an ultralow lattice thermal conductivity of 0.19 W m^-1 K^-1 at 873 K. Ultraviolet photoelectron spectroscopy reveals that Ge and In incorporation produces an enhanced density of states in the electronic structure of SnSe, resulting in a large Seebeck coefficient. Ge and In codoping not only optimizes the Seebeck coefficient but also substantially increases the carrier concentration and electrical conductivity, helping to maintain a high power factor over a wide temperature range. Benefiting from an enhanced power factor and markedly reduced lattice thermal conductivity, high average ZT and peak ZT are achieved in Ge- and In-codoped SnSe nanoplates. This work achieves an ultrahigh average ZT of 0.88 in polycrystalline SnSe by adopting nontoxic element doping, potentially expanding its usefulness for various thermoelectric generator applications.

Energy-Saving Pathways for Thermoelectric Nanomaterial Synthesis: Hydrothermal/Solvothermal, Microwave-Assisted, Solution-Based, and Powder Processing

The pillars of Green Chemistry necessitate the development of new chemical methodologies and processes that can benefit chemical synthesis in terms of energy efficiency, conservation of resources, product selectivity, operational simplicity and, crucially, health, safety, and environmental impact. Implementation of green principles whenever possible can spur the growth of benign scientific technologies by considering environmental, economical, and societal sustainability in parallel. These principles seem especially important in the context of the manufacture of materials for sustainable energy and environmental applications. In this review, the production of energy conversion materials is taken as an exemplar, by examining the recent growth in the energy-efficient synthesis of thermoelectric nanomaterials for use in devices for thermal energy harvesting. Specifically, "soft chemistry" techniques such as solution-based, solvothermal, microwave-assisted, and mechanochemical (ball-milling) methods as viable and sustainable alternatives to processes performed at high temperature and/or pressure are focused. How some of these new approaches are also considered to thermoelectric materials fabrication can influence the properties and performance of the nanomaterials so-produced and the prospects of developing such techniques further.

High-Performance Thermoelectrics Based on Solution-Grown SnSe Nanostructures

Two-dimensional layered tin selenide (SnSe) has attracted immense interest in thermoelectrics due to its ultralow lattice thermal conductivity and high thermoelectric performance. To date, the majority of thermoelectric studies of SnSe have been based on single crystals. However, because synthesizing SnSe single crystals is an expensive, time-consuming process that requires high temperatures and because SnSe single crystals have relatively weaker mechanical stability, they are not favorable for scaling up synthesis, commercialization, or practical applications. As a result, research on nanocrystalline SnSe that can be produced in large quantities by simple and low-temperature solution-phase synthesis is needed. In this Perspective, we discuss the progress in thermoelectric properties of SnSe with a particular emphasis on nanocrystalline SnSe, which is grown in solution. We first describe the state-of-the-art high-performance single crystal and polycrystals of SnSe and their importance and drawbacks and discuss how nanocrystalline SnSe can solve some of these challenges. We illustrate different solution-phase synthesis procedures to produce various SnSe nanostructures and discuss their thermoelectric properties. We also highlight a unique solution-phase synthesis technique to prepare CdSe-coated SnSe nanocomposites and its unprecedented thermoelectric figure of merit (ZT) of 2.2 at 786 K, as reported in this issue of ACS Nano. In general, solution synthesis showed excellent control over nanoscale grain growth, and nanocrystalline SnSe shows ultralow thermal conductivity due to strong phonon scattering by the nanoscale grain boundaries. Finally, we offer insight into the opportunities and challenges associated with nanocrystalline SnSe synthesized by the solution route and its future in thermoelectric energy conversion.

Defect Engineering in Solution-Processed Polycrystalline SnSe Leads to High Thermoelectric Performance

SnSe has emerged as one of the most promising materials for thermoelectric energy conversion due to its extraordinary performance in its single-crystal form and its low-cost constituent elements. However, to achieve an economic impact, the polycrystalline counterpart needs to replicate the performance of the single crystal. Herein, we optimize the thermoelectric performance of polycrystalline SnSe produced by consolidating solution-processed and surface-engineered SnSe particles. In particular, the SnSe particles are coated with CdSe molecular complexes that crystallize during the sintering process, forming CdSe nanoparticles. The presence of CdSe nanoparticles inhibits SnSe grain growth during the consolidation step due to Zener pinning, yielding a material with a high density of grain boundaries. Moreover, the resulting SnSe-CdSe nanocomposites present a large number of defects at different length scales, which significantly reduce the thermal conductivity. The produced SnSe-CdSe nanocomposites exhibit thermoelectric figures of merit up to 2.2 at 786 K, which is among the highest reported for solution-processed SnSe.

Solution phase growth and analysis of super-thin zigzag tin selenide nanoribbons

Tin selenide (SnSe), a highly promising layered material, has been garnering particular interest in recent times due to its significant promise for future energy devices. Herein we report a simple solution-phase approach for growing highly crystalline layered SnSe nanoribbons. Polyvinylpyrrolidone (PVP) was used as a templating agent to selectively passivates the (100) and (001) facets of the SnSe nanoribbons resulting in the unique growth of nanoribbons along theirb-axis with a defined zigzag edge state along the sidewalls. The SnSe nanoribbons are few layers thick (∼20 layers), with mean widths of ∼40 nm, and achievable length of >1μm. Nanoribbons could be produced in relatively high quantities (>150 mg) in a single batch experiment. The PVP coating also offers some resistance to oxidation, with the removal of the PVP seen to lead to the formation of a SnSe/SnO_xcore-shell structure. The use of non-toxic PVP to replace toxic amines that are typically employed for other 1D forms of SnSe is a significant advantage for sustainable and environmentally friendly applications. Heat transport properties of the SnSe nanoribbons, derived from power-dependent Raman spectroscopy, demonstrate the potential of SnSe nanoribbons as thermoelectric material.

The Importance of Surface Adsorbates in Solution-Processed Thermoelectric Materials: The Case of SnSe

Solution synthesis of particles emerges as an alternative to prepare thermoelectric materials with less demanding processing conditions than conventional solid-state synthetic methods. However, solution synthesis generally involves the presence of additional molecules or ions belonging to the precursors or added to enable solubility and/or regulate nucleation and growth. These molecules or ions can end up in the particles as surface adsorbates and interfere in the material properties. This work demonstrates that ionic adsorbates, in particular Na⁺ ions, are electrostatically adsorbed in SnSe particles synthesized in water and play a crucial role not only in directing the material nano/microstructure but also in determining the transport properties of the consolidated material. In dense pellets prepared by sintering SnSe particles, Na remains within the crystal lattice as dopant, in dislocations, precipitates, and forming grain boundary complexions. These results highlight the importance of considering all the possible unintentional impurities to establish proper structure-property relationships and control material properties in solution-processed thermoelectric materials.

Dimethyltin(IV)-4,6-dimethyl-2-pyridylselenolate: an efficient single source precursor for the preparation of SnSe nanosheets as anode material for lithium ion batteries

The air stable tin(IV) complex [Me₂Sn{2-SeC₅H₂(Me-4,6)₂N}₂] has been synthesized, characterized by NMR, elemental analysis, and single crystal XRD, and employed as a single source molecular precursor (SSP) for the facile synthesis of orthorhombic SnSe nanosheets. The crystal structure, phase purity, morphology and band gap of the nanosheets were investigated by pXRD, EDS, electron microscopy and diffuse reflectance spectroscopy techniques, respectively. It was found that the preferential orientation of planes and the morphology of the nanosheets rely upon the reaction conditions. The band gaps of the nanosheets were blue shifted with respect to the bulk band gap of the material. The synthesized SnSe nanosheets have been employed as an anode material in lithium ion batteries (LIBs). The material exhibits an initial specific capacity of 1134 mA h g^-1 at a current density of 50 mA g^-1 and was found to retain a capacity of 380 mA h g^-1 even after 70 cycles with 100% efficiency.

The ultralow thermal conductivity and tunable thermoelectric properties of surfactant-free SnSe nanocrystals

Most studies to date on SnSe thermal transport are focused on single crystals and polycrystalline pellets that are obtained using high-temperature processing conditions and sophisticated instruments. The effects of using sub-10 nm-size SnSe nanocrystals on the thermal transport and thermoelectric properties have not been studied to the best of our knowledge. Here, we report the synthesis of sub-10 nm colloidal surfactant-free SnSe NCs at a relatively low temperature (80 °C) and investigate their thermoelectric properties. Pristine SnSe NCs exhibit p-type transport but have a modest power factor of 12.5 μW m⁻¹ K⁻² and ultralow thermal conductivity of 0.1 W m⁻¹ K⁻¹ at 473 K. Interestingly, the one-step post-synthesis treatment of NC film with methylammonium iodide can switch the p-type transport of the pristine film to n-type. The power factor improved significantly to 20.3 μW m⁻¹ K⁻², and the n-type NCs show record ultralow thermal conductivity of 0.14 W m⁻¹ K⁻¹ at 473 K. These surfactant-free SnSe NCs were then used to fabricate flexible devices that show superior performance to rigid devices. After 20 bending cycles, the flexible device shows a 34% loss in the power factor at room temperature (295 K). Overall, this work demonstrates p- and n-type transport in SnSe NCs via the use of simple one-step post-synthesis treatment, while retaining ultralow thermal conductivity.

This work demonstrates tunable transport in surfactant free SnSe nanocrystals that retain ultralow nature of thermal conductivity.

Solution-Synthesized SnSe1-xSx: Dual-Functional Materials with Enhanced Electrochemical Storage and Thermoelectric Performance

The exploration of materials with multifunctional properties, such as energy harvesting and storage, is crucial in integrated energy devices and technologies. Herein, through an organic-free "soft chemical" solution method, a series of dual-functional SnSe_1-xS_x (x = 0, 0.1, 0.2, 0.3, 0.4, and 0.5) nanoparticles have been developed toward high-performance electrochemical energy storage and thermoelectric conversion. Among the synthesized S-substituted SnSe, SnSe_0.5S_0.5 exhibits the highest rate capacity (546.1 mA h g^-1 at 2 A g^-1) and the best reversible capacity (556.2 mA h g^-1 at 0.1 A g^-1 after 100 cycles), which are much enhanced compared to those of SnSe. Density functional theory calculation confirms that the composition regulation by S substitution can lower the diffusion barrier of Li⁺, boost the diffusion rate of Li⁺, and in turn enhance the electrochemical kinetics, thus increasing the Li⁺ storage performance. Meanwhile, partially replacing Se by S decreases the lattice thermal conductivity, leading to an improved peak zT of 0.64 at 773 K in SnSe_0.9S_0.1, which is enhanced compared to the value for SnSe obtained at the same temperature. This study develops a combined composition tuning-nanostructuring approach for optimizing the electrochemical and thermoelectric performance of dual-functional SnSe.

Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials

The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.

Effect of iodine doping on the electrical, thermal and mechanical properties of SnSe for thermoelectric applications

We report the evolution of the thermoelectric and mechanical properties of n-type SnSe obtained by iodine doping at the Se site. The thermoelectric performance of n-type SnSe is detailed in the temperature range starting from 150 K ≤ T ≤ 700 K. The power factor of 0.25% iodine doped SnSe is found to be 0.33 mW m-1 K-2 at 700 K, comparable to that of the other monovalent doped n-type SnSe. The temperature-dependent electrical conductivity of the undoped and iodine doped SnSe samples is corroborated by using the adiabatic small polaron hopping model. A very low value of thermal conductivity, 0.62 W m-1 K-1, is obtained at 300 K and is comparable to that of SnSe single crystals. The low thermal conductivity of n-type polycrystalline SnSe is understood by taking into account the anharmonic phonon vibrations induced by the incorporation of heavy iodine atoms at the Se sites as well as the structural hierarchy of the compound. Besides, iodine doping is found to improve the reduced Young's modulus and hardness values of SnSe, which is highly desirable for thermoelectric device applications.

Hierarchical Structures Advance Thermoelectric Properties of Porous n-type β-Ag2Se

Owing to the intrinsically good near-room-temperature thermoelectric performance, β-Ag₂Se has been considered as a promising alternative to n-type Bi₂Te₃ thermoelectric materials. Herein, we develop an energy- and time-efficient wet mechanical alloying and spark plasma sintering method to prepare porous β-Ag₂Se with hierarchical structures including high-density pores, a metastable phase, nanosized grains, semi-coherent grain boundaries, high-density dislocations, and localized strains, leading to an ultralow lattice thermal conductivity of ∼0.35 W m^-1 K^-1 at 300 K. A relatively high carrier mobility is obtained by adjusting the sintering temperature to obtain pores with an average size of ∼260 nm, therefore resulting in a figure of merit, zT, of ∼0.7 at 300 K and ∼0.9 at 390 K. The single parabolic band model predicts that zT of such porous β-Ag₂Se can reach ∼1.1 at 300 K if the carrier concentration can be tuned to ∼1 × 10¹⁸ cm^-3, suggesting that β-Ag₂Se can be a competitive candidate for room-temperature thermoelectric applications.

Advanced Thermoelectric Design: From Materials and Structures to Devices

The long-standing popularity of thermoelectric materials has contributed to the creation of various thermoelectric devices and stimulated the development of strategies to improve their thermoelectric performance. In this review, we aim to comprehensively summarize the state-of-the-art strategies for the realization of high-performance thermoelectric materials and devices by establishing the links between synthesis, structural characteristics, properties, underlying chemistry and physics, including structural design (point defects, dislocations, interfaces, inclusions, and pores), multidimensional design (quantum dots/wires, nanoparticles, nanowires, nano- or microbelts, few-layered nanosheets, nano- or microplates, thin films, single crystals, and polycrystalline bulks), and advanced device design (thermoelectric modules, miniature generators and coolers, and flexible thermoelectric generators). The outline of each strategy starts with a concise presentation of their fundamentals and carefully selected examples. In the end, we point out the controversies, challenges, and outlooks toward the future development of thermoelectric materials and devices. Overall, this review will serve to help materials scientists, chemists, and physicists, particularly students and young researchers, in selecting suitable strategies for the improvement of thermoelectrics and potentially other relevant energy conversion technologies.

Tin Selenide Molecular Precursor for the Solution Processing of Thermoelectric Materials and Devices

In the present work, we report a solution-based strategy to produce crystallographically textured SnSe bulk nanomaterials and printed layers with optimized thermoelectric performance in the direction normal to the substrate. Our strategy is based on the formulation of a molecular precursor that can be continuously decomposed to produce a SnSe powder or printed into predefined patterns. The precursor formulation and decomposition conditions are optimized to produce pure phase 2D SnSe nanoplates. The printed layer and the bulk material obtained after hot press displays a clear preferential orientation of the crystallographic domains, resulting in an ultralow thermal conductivity of 0.55 W m^-1 K^-1 in the direction normal to the substrate. Such textured nanomaterials present highly anisotropic properties with the best thermoelectric performance in plane, i.e., in the directions parallel to the substrate, which coincide with the crystallographic bc plane of SnSe. This is an unfortunate characteristic because thermoelectric devices are designed to create/harvest temperature gradients in the direction normal to the substrate. We further demonstrate that this limitation can be overcome with the introduction of small amounts of tellurium in the precursor. The presence of tellurium allows one to reduce the band gap and increase both the charge carrier concentration and the mobility, especially the cross plane, with a minimal decrease of the Seebeck coefficient. These effects translate into record out of plane ZT values at 800 K.

Dynamic Epitaxial Crystallization of SnSe2 on the Oxidized SnSe Surface and Its Atomistic Mechanisms

Surface oxidation of SnSe sharply reduces its thermoelectric properties though the bulk single-crystalline materials of SnSe claim the record high zT values. Investigation on the oxidation behaviors of SnSe together with the subsequent phase transition and element migration is fundamentally important to maintaining the ultrahigh zT values, with a potential for further improvement. In this work, we disclose the dynamic epitaxial crystallization of SnSe2 on the amorphous surface of partially oxidized SnSe crystals and the corresponding atomistic mechanisms via transmission electron microscopy (TEM). It is revealed that the thermally annealed amorphous surface crystallized to SnO2 and SnSe2 in the outermost and secondary layers, respectively, forming distinctive SnSe/SnSe2/SnO2 multilayer heterostructures with specific orientation relationships between the two selenides. By means of in situ scanning TEM (STEM), the dynamic epitaxial crystallization process of SnSe2 was revealed when the oxidized SnSe surface was subjected to electron beam irradiation. Through the atomic-scale characterization and modeling analysis, we find that the exposed dangling Se diatoms on the SnSe surface serve as nucleation sites for lateral epitaxial crystallization of SnSe2. The same valence and similar coordination configuration of Se atoms in these two phases are supposed to facilitate the sharing of Se atoms, with lattice distortions in the SnSe2/SnSe interface. These findings are valuable for understanding the surface oxidation behavior of SnSe and revealing the interface structures of SnSe2/SnSe heterojunctions and also offering new routes for SnSe-related multilayer or heterostructure system design.

High-Performance Thermoelectric SnSe: Aqueous Synthesis, Innovations, and Challenges

Tin selenide (SnSe) is one of the most promising candidates to realize environmentally friendly, cost-effective, and high-performance thermoelectrics, derived from its outstanding electrical transport properties by appropriate bandgaps and intrinsic low lattice thermal conductivity from its anharmonic layered structure. Advanced aqueous synthesis possesses various unique advantages including convenient morphology control, exceptional high doping solubility, and distinctive vacancy engineering. Considering that there is an urgent demand for a comprehensive survey on the aqueous synthesis technique applied to thermoelectric SnSe, herein, a thorough overview of aqueous synthesis, characterization, and thermoelectric performance in SnSe is provided. New insights into the aqueous synthesis-based strategies for improving the performance are provided, including vacancy synergy, crystallization design, solubility breakthrough, and local lattice imperfection engineering, and an attempt to build the inherent links between the aqueous synthesis-induced structural characteristics and the excellent thermoelectric performance is presented. Furthermore, the significant advantages and potentials of an aqueous synthesis route for fabricating SnSe-based 2D thermoelectric generators, including nanorods, nanobelts, and nanosheets, are also discussed. Finally, the controversy, strategy, and outlook toward future enhancement of SnSe-based thermoelectric materials are also provided. This Review guides the design of thermoelectric SnSe with high performance and provides new perspectives as a reference for other thermoelectric systems.

Recent Progress of Two-Dimensional Thermoelectric Materials

Thermoelectric generators have attracted a wide research interest owing to their ability to directly convert heat into electrical power. Moreover, the thermoelectric properties of traditional inorganic and organic materials have been significantly improved over the past few decades. Among these compounds, layered two-dimensional (2D) materials, such as graphene, black phosphorus, transition metal dichalcogenides, IVA-VIA compounds, and MXenes, have generated a large research attention as a group of potentially high-performance thermoelectric materials. Due to their unique electronic, mechanical, thermal, and optoelectronic properties, thermoelectric devices based on such materials can be applied in a variety of applications. Herein, a comprehensive review on the development of 2D materials for thermoelectric applications, as well as theoretical simulations and experimental preparation, is presented. In addition, nanodevice and new applications of 2D thermoelectric materials are also introduced. At last, current challenges are discussed and several prospects in this field are proposed.

Design, Performance, and Application of Thermoelectric Nanogenerators

Thermal energy harvesting from the ambient environment through thermoelectric nanogenerators (TEGs) is an ideal way to realize self-powered operation of electronics, and even relieve the energy crisis and environmental degradation. As one of the most significant energy-related technologies, TEGs have exhibited excellent thermoelectric performance and played an increasingly important role in harvesting and converting heat into electric energy, gradually becoming one of the hot research fields. Here, the development of TEGs including materials optimization, structural designs, and potential applications, even the opportunities, challenges, and the future development direction, is analyzed and summarized. Materials optimization and structural designs of flexibility for potential applications in wearable electronics are systematically discussed. With the development of flexible and wearable electronic equipment, flexible TEGs show increasingly great application prospects in artificial intelligence, self-powered sensing systems, and other fields in the future.

Toward New Thermoelectrics: Tin Selenide/Modified Graphene Oxide Nanocomposites

New nanocomposites have been prepared by combining tin selenide (SnSe) with graphene oxide (GO) in a simple aqueous solution process followed by ice templating (freeze casting). The resulting integration of SnSe within the GO matrix leads to modifications of electrical transport properties and the possibility of influencing the power factor (S ²σ). Moreover, these transport properties can then be further improved (S, σ increased) by functionalization of the GO surface to form modified nanocomposites (SnSe/GO_mod) with enhanced power factors in comparison to unmodified nanocomposites (SnSe/GO) and "bare" SnSe itself. Functionalizing the GO by reaction with octadecyltrimethoxysilane (C₂₁H₄₆O₃Si) and triethylamine ((CH₃CH₂)₃N) switches SnSe from p-type to n-type conductivity with an appreciable Seebeck coefficient and high electrical conductivity (1257 S·m^-1 at 539 K), yielding a 20-fold increase in the power factor compared to SnSe itself, prepared by the same route. These findings present new possibilities to design inexpensive and porous nanocomposites based on metal chalcogenides and functionalized carbon-derived matrices.

Crystallographically textured SnSe nanomaterials produced from the liquid phase sintering of nanocrystals

We report the thermoelectric performance of p-type nanocrystalline SnSe obtained from the liquid phase sintering of blends of SnSe nanocrystals and Te nanorods. A cycled hot press procedure at a temperature above the Te melting point promoted the formation of crystallographically textured SnSe nanomaterials with relative densities up to 93%. After consolidation, part of this Te was found within the SnSe lattice and part remained as elemental Te between the SnSe grains. The presence of Te during the SnSe consolidation resulted in SnSe nanomaterials with higher electrical conductivities and lower Seebeck coefficients and thermal conductivities. By adjusting the amount of Te, thermoelectric figures of merit (ZT) up to 1.4 at 790 K were measured in the direction of the uniaxial pressure, coinciding with the preferential a crystallographic axis. While this value matches the highest ZT value reported at this temperature for SnSe in the [100] crystal direction, the ZT values of the consolidated SnSe along the bc plane were relatively lower due to moderately low thermal conductivities in this plane.

Design and characterization of novel polymorphs of single-layered tin-sulfide for direction-dependent thermoelectric applications using first-principles approaches

Advanced computational approaches have made the design and characterization of novel two-dimensional (2D) materials possible for applications in cutting-edge technologies.

Large-Scale, Solution-Synthesized Nanostructured Composites for Thermoelectric Applications

As more than one-half of worldwide consumed energy is wasted as heat every year, high-efficiency thermoelectric materials are highly demanded for the conversion of rejected heat to electricity in a reliable fashion. In the recent few decades, nanoscience has revolutionized thermoelectrics via the quantum confinement effect in electronic structures and grain-boundary scattering of heat carriers. As the gas-phase syntheses of nanomaterials are not easily scalable and solid-state syntheses are not controllable in terms of microstructures at various length scales, significant research efforts have focused on solution syntheses that can build nanostructures with well-defined size, composition, and morphology. Beyond the performance, several novel effects that benefit the portability and cost efficiency have been discovered in the solution-synthesized nanomaterials. Herein, the relevant progress is reviewed and some prospects proposed.

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the n-type NW channel. Here, we successfully synthesized p-type SnSe and SnS NWs via the chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit an impressive photodetection performance with a high photoconductive gain of 1.5 × 10⁴ (2.8 × 10⁴), good responsivity of 1.0 × 10⁴ A W^-1 (1.6 × 10⁴ A W^-1), and excellent detectivity of 3.3 × 10¹² Jones (2.4 × 10¹² Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the p-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Controllable Colloidal Synthesis of Tin(II) Chalcogenide Nanocrystals and Their Solution-Processed Flexible Thermoelectric Thin Films

A systematic colloidal synthesis approach to prepare tin(II, IV) chalcogenide nanocrystals with controllable valence and morphology is reported, and the preparation of solution-processed nanostructured thermoelectric thin films from them is then demonstrated. Triangular SnS nanoplates with a recently-reported π-cubic structure, SnSe with various shapes (nanostars and both rectangular and hexagonal nanoplates), SnTe nanorods, and previously reported Sn(IV) chalcogenides, are obtained using different combinations of solvents and ligands with an Sn4+ precursor. These unique nanostructures and the lattice defects associated with their Sn-rich composition allow the production of flexible thin films with competitive thermoelectric performance, exhibiting room temperature Seebeck coefficients of 115, 81, and 153 μV K-1 for SnS, SnSe, and SnTe films, respectively. Interestingly, a p-type to n-type transition is observed in SnS and SnSe due to partial anion loss during post-synthesis annealing at 500 °C. A maximum figure of merit (ZT) value of 0.183 is achieved for an SnTe thin film at 500 K, exceeding ZT values from previous reports on SnTe at this temperature. Thus, a general strategy to prepare tin(II) chalcogenide nanocrystals is provided, and their potential for use in high-performance flexible thin film thermoelectric generators is demonstrated.

Constructing Highly Porous Thermoelectric Monoliths with High-Performance and Improved Portability from Solution-Synthesized Shape-Controlled Nanocrystals

Thermoelectricity offers a viable and reliable solution to convert waste heat into electricity. To enhance the performance and portability of thermoelectric materials, the crystal grain and pore structure should be simultaneously manipulated to achieve high electrical conductivity (σ), low thermal conductivity (κ), high figure of merit (zT), and low relative density. However, they cannot be synchronously realized using nanocrystals with uncontrolled domain size and shape as building blocks. Here, we employ solution-synthesized PbS nanocrystals with large grain size, controllable shape and tunable spatial packing to realize the aforementioned structural tuning. The as-sintered highly porous and well crystalline monolith exhibits high σ, low κ, high zT (1.06 at 838 K) and low relative density (82%). The phonon transport is studied by density functional theory highlighting the crucial role of phonon-pore scattering in reducing κ to enhance zT. Our strategy may benefit thermoelectrics and shed light on other technical fields such as catalysis, gas sensing, photovoltaics, and so forth.

Topotactic anion-exchange in thermoelectric nanostructured layered tin chalcogenides with reduced selenium content

Topotactic solution synthesis yields nanostructured tin chalcogenides, SnS_1–xSe_x with controllable composition; spark plasma sintered SnS_0.1Se_0.9 achieves ZT ≈ 1.16 at 923 K via microstructural texture tuning.

Anion exchange has been performed with nanoplates of tin sulfide (SnS) via “soft chemical” organic-free solution syntheses to yield layered pseudo-ternary tin chalcogenides on a 10 g-scale. SnS undergoes a topotactic transformation to form a series of S-substituted tin selenide (SnSe) nano/micro-plates with tuneable chalcogenide composition. SnS_0.1Se_0.9 nanoplates were spark plasma sintered into phase-pure, textured, dense pellets, the ZT of which has been significantly enhanced to ≈1.16 from ≈0.74 at 923 K via microstructure texturing control. These approaches provide versatile, scalable and low-cost routes to p-type layered tin chalcogenides with controllable composition and competitive thermoelectric performance.

Tin Selenide (SnSe): Growth, Properties, and Applications

The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b-axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li-ion batteries, and other emerging fields are also discussed.

Unexpected Large Hole Effective Masses in SnSe Revealed by Angle-Resolved Photoemission Spectroscopy

SnSe has emerged as an efficient thermoelectric material since a high value of the thermoelectric figure of merit (ZT) has been reported recently. Here we show with systematic angle resolved photoemission spectroscopy data that the low-lying electronic structures of undoped and hole-doped SnSe crystals exhibit noticeable temperature variation from 80 to 600 K. In particular, the hole effective masses for the two lowest lying valence band maxima are found to be very large and increase with decreasing temperature. Thermoelectric parameters derived from such hole-mass enhancement agree well with the transport values, indicating comprehensively a reduced impact of multivalley transport to the system's thermoelectric performance.

Large-Scale Surfactant-Free Synthesis of p-Type SnTe Nanoparticles for Thermoelectric Applications

A facile one-pot aqueous solution method has been developed for the fast and straightforward synthesis of SnTe nanoparticles in more than ten gram quantities per batch. The synthesis involves boiling an alkaline Na₂SnO₂ solution and a NaHTe solution for short time scales, in which the NaOH concentration and reaction duration play vital roles in controlling the phase purity and particle size, respectively. Spark plasma sintering of the SnTe nanoparticles produces nanostructured compacts that have a comparable thermoelectric performance to bulk counterparts synthesised by more time- and energy-intensive methods. This approach, combining an energy-efficient, surfactant-free solution synthesis with spark plasma sintering, provides a simple, rapid, and inexpensive route to p-type SnTe nanostructured materials.

Ultrathin few layer oxychalcogenide BiCuSeO nanosheets

Large scale ultrathin (∼3–4 nm thick and ∼1 μm long) few layered (4–5 layers) BiCuSeO nanosheets were synthesised by a facile soft chemical synthesis. BiCuSeO nanosheets exhibit lower lattice thermal conductivity and higher electrical conductivity than that of their bulk counterpart.

Facile chemical synthesis and enhanced thermoelectric properties of Ag doped SnSe nanocrystals

A two-step, surfactant-free solution growth process was utilized to synthesize p-type Ag doped SnSe nanocrystals in gram quantities.

Booming Development of Group IV-VI Semiconductors: Fresh Blood of 2D Family

As an important component of 2D layered materials (2DLMs), the 2D group IV metal chalcogenides (GIVMCs) have drawn much attention recently due to their earth-abundant, low-cost, and environmentally friendly characteristics, thus catering well to the sustainable electronics and optoelectronics applications. In this instructive review, the booming research advancements of 2D GIVMCs in the last few years have been presented. First, the unique crystal and electronic structures are introduced, suggesting novel physical properties. Then the various methods adopted for synthesis of 2D GIVMCs are summarized such as mechanical exfoliation, solvothermal method, and vapor deposition. Furthermore, the review focuses on the applications in field effect transistors and photodetectors based on 2D GIVMCs, and extends to flexible devices. Additionally, the 2D GIVMCs based ternary alloys and heterostructures have also been presented, as well as the applications in electronics and optoelectronics. Finally, the conclusion and outlook have also been presented in the end of the review.

Facile Surfactant-Free Synthesis of p-Type SnSe Nanoplates with Exceptional Thermoelectric Power Factors

A surfactant‐free solution methodology, simply using water as a solvent, has been developed for the straightforward synthesis of single‐phase orthorhombic SnSe nanoplates in gram quantities. Individual nanoplates are composed of {100} surfaces with {011} edge facets. Hot‐pressed nanostructured compacts (E_g≈0.85 eV) exhibit excellent electrical conductivity and thermoelectric power factors (S²σ) at 550 K. S²σ values are 8‐fold higher than equivalent materials prepared using citric acid as a structure‐directing agent, and electrical properties are comparable to the best‐performing, extrinsically doped p‐type polycrystalline tin selenides. The method offers an energy‐efficient, rapid route to p‐type SnSe nanostructures.