Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS2/GeC van der Waals heterostructure

Out-of-plane pressure and electron doping can affect interlayer interactions in van der Waals materials, modifying their crystal structure and physical and chemical properties. In this study, we used magnetic monolayer 1T/1T'-CrS2 and high symmetry 2D-honeycomb material GeC to construct a GeC/CrS2/GeC triple layered van der Waals heterostructure (vdWH). Based on density functional theory calculations, we found that applying out-of-plane strain and doping with electrons could induce a 1T'-to-1T phase transition and consequently the ferromagnetic (FM)-to-antiferromagnetic (AFM) transition in the CrS2 layer. Such a phase and magnetic transition arises from the pressure and electron-induced interlayer interaction enhancement. The electron doping can effectively decrease the critical compressive stress from ∼4.3 GPa (charge neutrality) to ∼664 MPa (Q = 9 × 10-3 e- per atom) for the FM-to-AFM transition. These properties could be used to fabricate and program the 2D lateral FM/AFM heterostructures for artificial controlled spin texture and miniaturized spintronic devices.

Tuning and exploiting interlayer coupling in two-dimensional van der Waals heterostructures

Two-dimensional (2D) layered materials can stack into new material systems, with van der Waals (vdW) interaction between the adjacent constituent layers. This stacking process of 2D atomic layers creates a new degree of freedom-interlayer interface between two adjacent layers-that can be independently studied and tuned from the intralayer degree of freedom. In such heterostructures (HSs), the physical properties are largely determined by the vdW interaction between the individual layers,i.e.interlayer coupling, which can be effectively tuned by a number of means. In this review, we summarize and discuss a number of such approaches, including stacking order, electric field, intercalation, and pressure, with both their experimental demonstrations and theoretical predictions. A comprehensive overview of the modulation on structural, optical, electrical, and magnetic properties by these four approaches are also presented. We conclude this review by discussing several prospective research directions in 2D HSs field, including fundamental physics study, property tuning techniques, and future applications.

Modulating Charge-Density Wave Order and Superconductivity from Two Alternative Stacked Monolayers in a Bulk 4Hb-TaSe2 Heterostructure via Pressure

Two-dimensional (2D) van der Waals heterostructures (VDWHs) containing a charge-density wave (CDW) and superconductivity (SC) have revealed rich tunability in their properties, which provide a new route for optimizing their novel exotic states. The interaction between SC and CDW is critical to its properties; however, understanding this interaction within VDWHs is very limited. A comprehensive in situ study and theoretical calculation on bulk 4Hb-TaSe₂ VDWHs consisting of alternately stacking 1T-TaSe₂ and 1H-TaSe₂ monolayers are investigated under high pressure. Surprisingly, the superconductivity competes with the intralayer and adjacent-layer CDW order in 4Hb-TaSe₂, which results in substantially and continually boosted superconductivity under compression. Upon total suppression of the CDW, the superconductivity in the individual layers responds differently to the charge transfer. Our results provide an excellent method to efficiently tune the interplay between SC and CDW in VDWHs and a new avenue for designing materials with tailored properties.

Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer

Excitonic properties in 2D heterobilayers are closely governed by charge transfer (CT) and excitonic energy transfer (ET) at van der Waals interfaces. Various means have been employed to modulate the interlayer CT and ET, including electrical gating and modifying interlayer spacing, but with limited extent in their controllability. Here, we report a novel method to modulate these transfers in the MoS₂/WS₂ heterobilayer by applying compressive strain under hydrostatic pressure. Raman and photoluminescence measurements, combined with density functional theory calculations, show pressure-enhanced interlayer interaction of the heterobilayer. Heterobilayer-to-monolayer photoluminescence intensity ratio (η) of WS₂ decreases by five times up to ≈4 GPa, suggesting enhanced ET, whereas it increases by an order of magnitude at higher pressures and reaches almost unity. Theoretical calculations show that orbital switching and charge transfers in the heterobilayer's hybridized conduction band are responsible for the non-monotonic modulation of the transfers. Our findings provide a compelling approach toward effective mechanical control of CT and ET in 2D excitonic devices.

Platinum-like HER onset in a GNR/MoS2 quantum dot heterostructure through curvature-dependent electron density reconfiguration

Tailoring the curvature-directed lattice strain in GNRs along with optimal surface anchoring of molybdenum disulfide (MoS₂) quantum dots (QDs) can lead to a unique heterostructure with Pt-like HER activity (onset potential -60 mV). The curvature-induced electronic charge redistribution at the curved region in the graphene nanoribbons allows a facile GNR-MoS₂ interfacial charge transfer in the heterostructure, making the interfacial sulfur (S) more active towards the HER. The density functional theory (DFT) calculations confirmed electronically activated interfacial S-based catalytic centers in the curved GNR-based heterostructure leading to Pt-like HER activity.

The Magnetic Genome of Two-Dimensional van der Waals Materials

Magnetism in two-dimensional (2D) van der Waals (vdW) materials has recently emerged as one of the most promising areas in condensed matter research, with many exciting emerging properties and significant potential for applications ranging from topological magnonics to low-power spintronics, quantum computing, and optical communications. In the brief time after their discovery, 2D magnets have blossomed into a rich area for investigation, where fundamental concepts in magnetism are challenged by the behavior of spins that can develop at the single layer limit. However, much effort is still needed in multiple fronts before 2D magnets can be routinely used for practical implementations. In this comprehensive review, prominent authors with expertise in complementary fields of 2D magnetism (i.e., synthesis, device engineering, magneto-optics, imaging, transport, mechanics, spin excitations, and theory and simulations) have joined together to provide a genome of current knowledge and a guideline for future developments in 2D magnetic materials research.

Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr_{2}Ge_{2}Te_{6}

We investigate the twist-angle and gate dependence of the proximity exchange coupling in twisted graphene on monolayer Cr_{2}Ge_{2}Te_{6} from first principles. The proximitized Dirac band dispersions of graphene are fitted to a model Hamiltonian, yielding effective sublattice-resolved proximity-induced exchange parameters (λ_{ex}^{A} and λ_{ex}^{B}) for a series of twist angles between 0° and 30°. For aligned layers (0° twist angle), the exchange coupling of graphene is the same on both sublattices, λ_{ex}^{A}≈λ_{ex}^{B}≈4  meV, while the coupling is reversed at 30° (with λ_{ex}^{A}≈λ_{ex}^{B}≈-4  meV). Remarkably, at 19.1° the induced exchange coupling becomes antiferromagnetic: λ_{ex}^{A}<0, λ_{ex}^{B}>0. Further tuning is provided by a transverse electric field and the interlayer distance. The predicted proximity magnetization reversal and emergence of an antiferromagnetic Dirac dispersion make twisted graphene/Cr_{2}Ge_{2}Te_{6} bilayers a versatile platform for realizing topological phases and for spintronics applications.

An investigation of the effect of high-pressure on charge transfer in dye-sensitized solar cells based on surface-enhanced Raman spectroscopy

The interfacial charge transfer (CT) that plays an important role in enhancing the photoelectric conversion efficiency of dye-sensitized solar cells (DSSCs) has not always been fully explored. Here, a TiO₂@N719@Ag DSSC system was constructed, and the CT processes have been monitored by surface-enhanced Raman scattering (SERS) spectra. Meanwhile, it is well known that as one of the most common external stimuli, high pressure can increase the free carrier density of TiO₂ NPs and cause the band gap to narrow. In the high pressure SERS experiment, we observed a significant enhancement of the N719 dye in the TiO₂@N719@Ag system up to 2.48 GPa, which is consistent with the variation trend of the charge transfer degree (ρ_CT). It is indicated that band gap changes will strongly affect the CT processes, further influence the SERS signal intensity (or ρ_CT), and thus increase the CT probability of DSSCs. Furthermore, the decoration of Ag NPs in the TiO₂@N719@Ag DSSC system can introduce localized surface plasmon resonance (LSPR), enhance the light trapping ability and offer additional CT pathways. Importantly, it is possible to improve the photoelectric conversion performance of DSSCs via the high pressure method and the introduction of Ag NPs. Finally, in order to observe the CT process of DSSCs more clearly, the models describing the CT mechanism have been proposed. SERS spectroscopy is expected to be a promising technique for the exploration of the interfacial CT behavior in DSSC devices, which may further broaden the thoughts of improvement of efficiency of the cells.

SERS Selective Enhancement on Monolayer MoS2 Enabled by a Pressure-Induced Shift from Resonance to Charge Transfer

As a newly emerging approach for surface-enhanced Raman spectroscopy (SERS), pressure-induced SERS (PI-SERS) has been attracting increasing interest for its applications in Raman signal enhancement at extreme conditions. However, how to efficiently realize the PI-SERS enhancement and elucidate the corresponding mechanism remain open questions. Herein, we demonstrate the PI-SERS enhancement up to 8.04 GPa using monolayer molybdenum disulfide (ML-MoS₂) as a SERS substrate and three organic molecules with similar energy levels but different symmetries as probes. The combined theory and experiment results show that a pressure-induced increase in the Fermi level of the ML-MoS₂ substrate and a decrease in the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) energy gap of probe molecules lead to a transition from the multiple resonance-related SERS enhancement to charge transfer (CT)-dominated PI-SERS selective enhancement, depending on the incident laser energy and the pressure applied. Such PI-SERS selective enhancement has been discussed in the framework of CT-induced strengthening of electron-phonon coupling, as well as a possible match of the structural symmetries between probe molecules and the substrate. This study provides deep insights into our understanding of PI-SERS enhancement, and the revealed mechanism can be extended to other molecules for SERS at extreme conditions.

First-Principles Study of Na Intercalation and Diffusion Mechanisms at 2D MoS2/Graphene Interfaces

Na-ion batteries (NIBs) are emerging as promising energy storage devices for large-scale applications. Great research efforts are devoted to design new effective NIB electrode materials, especially for the anode side. A hybrid 2D heterojunction with graphene and MoS2 has been recently proposed for this purpose: while MoS2 has shown good reversible capacity as a NIB anode, graphene is expected to improve conductivity and resistance to mechanical stress upon cycling. The most relevant processes for the anode are the intercalation and diffusion of the large Na ion, whose complex mechanisms are determined by the structural and electronic features of the MoS2/graphene interface. Understanding these processes and mechanisms is crucial for developing new nanoscale anodes for NIBs with high performances. To this end, here we report a state-of-the-art DFT study to address (a) the structural and electronic properties of heterointerfaces between the MoS2 monolayers and graphene, (b) the most convenient insertion sites for Na, and (c) the possible diffusion paths along the interface and the corresponding energy barrier heights. We considered two MoS2 polymorphs: 1T and 3R. Our results show that 1T-MoS2 interacts more strongly with graphene than 3R-MoS2. In both cases, the best Na host site is found at the MoS2 side of the interface, and the band structure reveals a proper n-type character of the graphene moiety, which is responsible for electronic conduction. Minimum-energy paths for Na diffusion show very low barrier heights for the 3R-MoS2/graphene interface (<0.25 eV) and much higher values for its 1T counterpart (∼0.7 eV). Analysis of structural features along the diffusion transition states allows us to identify the strong coordination of Na with the exposed S atoms as the main feature hindering an effective diffusion in the 1T case. These results provide new hints on the physicochemical details of Na intercalation and diffusion mechanisms at complex 2D heterointerfaces and will help further development of advanced electrode materials for efficient NIBs.

Radical pair formation due to compression-induced electron transfer in crystals of energetic salts

An interesting effect was observed when studying explosive and non-explosive crystalline ionic materials at high pressures. A wide benchmark set of 76 crystals of different families was studied using the state-of-the-art methods at ambient pressure and in extremes (at 20, 50 and 100 GPa). It was found that hydrostatic compression leads to an electron transfer from the anion to the cation, which was carried out with different efficiencies for explosive and non-explosive salts. The measure of this electron transfer is reflected in the Hirshfeld charges (q) on cations, which decreased with the rise of pressure. Non-explosive materials are generally resistant to this effect, while explosives are much more susceptible. Thus, at 100 GPa, all the studied energetic salts demonstrate qcat < +0.1e, while for the non-explosive salts qcat > +0.1e. This value can be considered as a conditional boundary between explosive and non-explosive salts. The observed effect is in accord with the Szigeti's dielectric theory as well as with the electrophilicity/electronegativity equalization principle. In the present paper, we develop a mechanism of the explosive decomposition based on the assumption about formation of a radical pair as a result of the following reaction: . The study of such radicals revealed their intrinsic instability, which generally reflects either in a dissociative structure or in the presence of strongly weakened trigger bonds.

2D Materials and Heterostructures at Extreme Pressure

2D materials possess wide-tuning properties ranging from semiconducting and metallization to superconducting, etc., which are determined by their structure, empowering them to be appealing in optoelectronic and photovoltaic applications. Pressure is an effective and clean tool that allows modifications of the electronic structure, crystal structure, morphologies, and compositions of 2D materials through van der Waals (vdW) interaction engineering. This enables an insightful understanding of the variable vdW interaction induced structural changes, structure-property relations as well as contributes to the versatile implications of 2D materials. Here, the recent progress of high-pressure research toward 2D materials and heterostructures, involving graphene, boron nitride, transition metal dichalcogenides, 2D perovskites, black phosphorene, MXene, and covalent-organic frameworks, using diamond anvil cell is summarized. A detailed analysis of pressurized structure, phonon dynamics, superconducting, metallization, doping together with optical property is performed. Further, the pressure-induced optimized properties and potential applications as well as the vision of engineering the vdW interactions in heterostructures are highlighted. Finally, conclusions and outlook are presented on the way forward.

Graphene Hybrid Structures for Integrated and Flexible Optoelectronics

Graphene (Gr) has many unique properties including gapless band structure, ultrafast carrier dynamics, high carrier mobility, and flexibility, making it appealing for ultrafast, broadband, and flexible optoelectronics. To overcome its intrinsic limit of low absorption, hybrid structures are exploited to improve the device performance. Particularly, van der Waals heterostructures with different photosensitive materials and photonic structures are very effective for improving photodetection and modulation efficiency. With such hybrid structures, Gr hybrid photodetectors can operate from ultraviolet to terahertz, with significantly improved R (up to 10⁹ A W^-1 ) and bandwidth (up to 128 GHz). Furthermore, integration of Gr with silicon (Si) complementary metal-oxide-semiconductor (CMOS) circuits, the human body, and soft tissues is successfully demonstrated, opening promising opportunities for wearable sensors and biomedical electronics. Here, the recent progress in using Gr hybrid structures toward high-performance photodetectors and integrated optoelectronic applications is reviewed.

Pressure-induced SERS enhancement in a MoS2/Au/R6G system by a two-step charge transfer process

Pressure-induced surface-enhanced Raman spectroscopy (PI-SERS) represents a new frontier in the research field of SERS. However, relatively few studies have focused on PI-SERS due to many difficulties, such as easy aggregation of nanoparticles, and difficulty in understanding the interaction mechanisms between probe molecules and the SERS substrate at high pressure. Here we developed an efficient semiconductor-metal SERS substrate (MoS₂/Au) to study PI-SERS. Different from the previously reported monotonous decrease in Raman intensities upon compression, an anomalous Raman enhancement of R6G molecules adsorbed on the MoS₂/Au substrate was observed up to 2.39 GPa, at which the degree of charge transfer (ρ_CT) between the R6G molecules and the MoS₂/Au substrate reaches a maximum. By comparison, it is proposed that the decoration of Au on the SERS system could bring about a two-step charge transfer (CT) process, introduce localized surface plasmon resonance (LSPR), and thus favor the PI-SERS enhancement. Moreover, this charge transfer also causes obvious changes in the optical behaviors of R6G molecules upon compression. This brings new insights into the SERS study and also offers new ideas for the development of SERS application in high pressure studies.

Dry Transfer of van der Waals Crystals to Noble Metal Surfaces To Enable Characterization of Buried Interfaces

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have been explored for many optoelectronic applications. Most of these applications require them to be on insulating substrates. However, for many fundamental property characterizations, such as mapping surface potential or conductance, insulating substrates are nonideal as they lead to charging and doping effects or impose the inhomogeneity of their charge environment on the atomically thin 2D layers. Here, we report a simple method of residue-free dry transfer of 2D TMDC crystal layers. This method is enabled via noble-metal (gold, silver) thin films and allows comprehensive nanoscale characterization of transferred TMDC crystals with multiple scanning probe microscopy techniques. In particular, intimate contact with underlying metal allows efficient tip-enhanced Raman scattering characterization, providing high spatial resolution (<20 nm) for Raman spectroscopy. Further, scanning Kelvin probe force microscopy allows high-resolution mapping of surface potential on transferred crystals, revealing their spatially varying structural and electronic properties. The layer-dependent contact potential difference is clearly observed and explained by charge transfer from contacts with Au and Ag. The demonstrated sample preparation technique can be generalized to probe many different 2D material surfaces and has broad implications in understanding of the metal contacts and buried interfaces in 2D material-based devices.

Stability and electronic properties of hybrid SnO bilayers: SnO/graphene and SnO/BN

Van der Waals structures based on two-dimensional materials have been considered as promising structures for novel nanoscale electronic devices. Two-dimensional SnO films which display intrinsic p-type semiconducting properties were fabricated recently. In this paper, we consider vertically stacked heterostructures consisting of a SnO monolayer with graphene or a BN monolayer to investigate their stability, electronic and transport properties using density functional theory. The calculated results find that the properties of the constituent monolayers are retained in these SnO-based heterostructures, and a p-type Schottky barrier is formed in the SnO/graphene heterostructure. Additionally, the Schottky barrier can be effectively controlled with an external electric field, which is useful characteristic for the van der Waals heterostructure-based electronic devices. In the SnO/BN heterostructure, the electronic properties of SnO are least affected by the insulating monolayer suggesting that the BN monolayer would be an ideal substrate for SnO-based nanoscale devices.

Two-dimensional hybrid layered materials: strain engineering on the band structure of MoS2/WSe2 hetero-multilayers

In this paper, we report a comprehensive modeling and simulation study of constructing hybrid layered materials by alternately stacking MoS₂ and WSe₂ monolayers. Such hybrid MoS₂/WSe₂ hetero-multilayers exhibited direct bandgap semiconductor characteristics with bandgap energy (E _g) in a range of 0.45-0.55 eV at room temperature, very attractive for optoelectronics (wavelength range 2.5-2.75 μm) based on thicker two-dimensional (2D) materials. It was also found that the interlayer distance has a significant impact on the electronic properties of the hetero-multilayers, for example a five orders of magnitude change in the conductance was observed. Three material phases, direct bandgap semiconductor, indirect bandgap semiconductor, and metal were observed in MoS₂/WSe₂ hetero-multilayers, as the interlayer distance decreased from its relaxed (i.e., equilibrium) value of about 6.73 Å down to 5.50 Å, representing a vertical pressure of about 0.8 GPa for the bilayer and 1.5 GPa for the trilayer. Such new hybrid layered materials are very interesting for future nanoelectronic pressure sensor and nanophotonic applications. This study describes a new approach to explore and engineer the construction and application of tunable 2D semiconductors.

Pressure-Dependent Light Emission of Charged and Neutral Excitons in Monolayer MoSe2

Tailoring the excitonic properties in two-dimensional monolayer transition metal dichalcogenides (TMDs) through strain engineering is an effective means to explore their potential applications in optoelectronics and nanoelectronics. Here we report pressure-tuned photon emission of trions and excitons in monolayer MoSe₂ via a diamond anvil cell (DAC) through photoluminescence measurements and theoretical calculations. Under quasi-hydrostatic compressive strain, our results show neutral (X⁰) and charged (X^-) exciton emission of monolayer MoSe₂ can be effectively tuned by alcohol mixture vs inert argon pressure transmitting media (PTM). During this process, X^- emission undergoes a continuous blue shift until reaching saturation, while X⁰ emission turns up splitting. The pressure-dependent charging effect observed in alcohol mixture PTM results in the increase of the X^- exciton component and facilitates the pressure-tuned emission of X^- excitons. This substantial tunability of X^- and X⁰ excitons in MoSe₂ can be extended to other 2D TMDs, which holds potential for developing strained and optical sensing devices.

Band engineering of the MoS2/stanene heterostructure: strain and electrostatic gating

In a fast developing field, it has been found that van der Waals heterostructures can overcome the weakness of single two-dimensional layered materials and extend their electronic and optoelectronic applications. Through first-principles methods, the studied MoS₂/stanene heterostructure preserves high-speed carrier characteristics and opens the direct band gap. Simultaneously, the band alignment shows that the electrons transfer from stanene to MoS₂, which forms an internal electric field. As an effective strategy, the out-of-plane strain remarkably changes the band gaps of the heterostructure and enhances its carrier concentration. In addition, the combined effects of the internal and external electric fields can further open the band gaps and induce a direct-to-indirect gap transition in the heterostructure. More interestingly, when the external electric field is equal to the reverse internal one, the heterostructure regains a Dirac cone. Our results show that the MoS₂/stanene heterostructure has potential applications in high-speed optoelectronic devices.

Correlatively Dependent Lattice and Electronic Structural Evolutions in Compressed Monolayer Tungsten Disulfide

Transition-metal dichalcogenides (TMDs) are promising materials for optoelectronic devices. Their lattice and electronic structural evolutions under high strain conditions and their relations remain open questions. We exert pressure on WS₂ monolayers on different substrates, namely, Si/SiO₂ substrate and diamond anvil surface up to ∼25 GPa. Structural distortions in various degree are disclosed based on the emergence of Raman-inactive B mode. Splits of out-of-plane B and A₁' modes are only observed on Si/SiO₂ substrate due to extra strain imported from volume decrease in Si and corrugation of SiO₂ surface, and its photoluminescence (PL) quenches quickly because of decreased K-K transition by conspicuous distortion of Brillouin zone. While diamond anvil surface provides better hydrostatic environment, combined analysis of PL and absorption proves that pressure effectively tunes PL emission energy and enhances Coulomb interactions. Knowledge of these distinct pressure tunable characteristics of monolayer WS₂ improves further understanding of structural and optical properties of TMDs.