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Zhang K, Zhang T, You J, Zheng X, Zhao M, Zhang L, Kong J, Luo Z, Huang S. Low-Temperature Vapor-Phase Growth of 2D Metal Chalcogenides. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307587. [PMID: 38084456 DOI: 10.1002/smll.202307587] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/30/2023] [Revised: 11/07/2023] [Indexed: 05/12/2024]
Abstract
2D metal chalcogenides (MCs) have garnered significant attention from both scientific and industrial communities due to their potential in developing next-generation functional devices. Vapor-phase deposition methods have proven highly effective in fabricating high-quality 2D MCs. Nevertheless, the conventionally high thermal budgets required for synthesizing 2D MCs pose limitations, particularly in the integration of multiple components and in specialized applications (such as flexible electronics). To overcome these challenges, it is desirable to reduce the thermal energy requirements, thus facilitating the growth of various 2D MCs at lower temperatures. Numerous endeavors have been undertaken to develop low-temperature vapor-phase growth techniques for 2D MCs, and this review aims to provide an overview of the latest advances in low-temperature vapor-phase growth of 2D MCs. Initially, the review highlights the latest progress in achieving high-quality 2D MCs through various low-temperature vapor-phase techniques, including chemical vapor deposition (CVD), metal-organic CVD, plasma-enhanced CVD, atomic layer deposition (ALD), etc. The strengths and current limitations of these methods are also evaluated. Subsequently, the review consolidates the diverse applications of 2D MCs grown at low temperatures, covering fields such as electronics, optoelectronics, flexible devices, and catalysis. Finally, current challenges and future research directions are briefly discussed, considering the most recent progress in the field.
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Affiliation(s)
- Kenan Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Tianyi Zhang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Jiawen You
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
| | - Xudong Zheng
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Mei Zhao
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Lijie Zhang
- Key Laboratory of Carbon Materials of Zhejiang Province, College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325035, China
| | - Jing Kong
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, William Mong Institute of Nano Science and Technology, and Hong Kong Branch of Chinese National Engineering Research Center for Tissue Restoration and Reconstruction, The Hong Kong University of Science and Technology, Kowloon, 999077, China
- Hong Kong University of Science and Technology-Shenzhen Research Institute, Nanshan, Shenzhen, 518057, China
| | - Shaoming Huang
- Guangzhou Key Laboratory of Low-Dimensional Materials and Energy Storage Devices, School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
- School of Chemistry and Materials Science, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou, 310024, China
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Kim G, Jeong DW, Lee G, Lee S, Ma KY, Hwang H, Jang S, Hong J, Pak S, Cha S, Cho D, Kim S, Lim J, Lee YW, Shin HS, Jang AR, Lee JO. Unusual Raman Enhancement Effect of Ultrathin Copper Sulfide. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306819. [PMID: 38152985 DOI: 10.1002/smll.202306819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/09/2023] [Revised: 11/26/2023] [Indexed: 12/29/2023]
Abstract
In surface-enhanced Raman spectroscopy (SERS), 2D materials are explored as substrates owing to their chemical stability and reproducibility. However, they exhibit lower enhancement factors (EFs) compared to noble metal-based SERS substrates. This study demonstrates the application of ultrathin covellite copper sulfide (CuS) as a cost-effective SERS substrate with a high EF value of 7.2 × 104 . The CuS substrate is readily synthesized by sulfurizing a Cu thin film at room temperature, exhibiting a Raman signal enhancement comparable to that of an Au noble metal substrate of similar thickness. Furthermore, computational simulations using the density functional theory are employed and time-resolved photoluminescence measurements are performed to investigate the enhancement mechanisms. The results indicate that polar covalent bonds (Cu─S) and strong interlayer interactions in the ultrathin CuS substrate increase the probability of charge transfer between the analyte molecules and the CuS surface, thereby producing enhanced SERS signals. The CuS SERS substrate demonstrates the selective detection of various dye molecules, including rhodamine 6G, methylene blue, and safranine O. Furthermore, the simplicity of CuS synthesis facilitates large-scale production of SERS substrates with high spatial uniformity, exhibiting a signal variation of less than 5% on a 4-inch wafer.
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Affiliation(s)
- Gwangwoo Kim
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Engineering Chemistry, Chungbuk National University, Chungdae-ro 1, Cheongju, 28644, Republic of Korea
| | - Du Won Jeong
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Geonhee Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Suok Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Kyung Yeol Ma
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Hyuntae Hwang
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - Seunghun Jang
- Chemical Data-Driven Research Center, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - John Hong
- School of Materials Science and Engineering, Kookmin University, Jeongneung-ro 77, Seoul, 02707, Republic of Korea
| | - Sangyeon Pak
- School of Electronic and Electrical Engineering, Hongik University, Seoul, 04066, Republic of Korea
| | - SeungNam Cha
- Department of Physics, Sungkyungkwan University (SKKU), Seobu-Ro 2066, Suwon, 16419, Republic of Korea
| | - Donghwi Cho
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
| | - Sunkyu Kim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science and Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Young-Woo Lee
- Department of Energy Systems, Soonchunhyang University, Soonchunhyang-ro 2, Asan, 31538, Republic of Korea
| | - Hyeon Suk Shin
- Department of Energy Engineering, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 44919, Republic of Korea
| | - A-Rang Jang
- Division of Electrical, Electronic and Control Engineering, Kongju National University, Cheonan-daero 1223-24, Cheonan, 31080, Republic of Korea
| | - Jeong-O Lee
- Advanced Materials Division, Korea Research Institute of Chemical Technology (KRICT), Gajeong-ro 141, Daejeon, 34114, Republic of Korea
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Liu Z, Tee SY, Guan G, Han MY. Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications. NANO-MICRO LETTERS 2024; 16:95. [PMID: 38261169 PMCID: PMC10805767 DOI: 10.1007/s40820-023-01315-y] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/02/2023] [Accepted: 11/30/2023] [Indexed: 01/24/2024]
Abstract
Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.
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Affiliation(s)
- Zhaosu Liu
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China
| | - Si Yin Tee
- Institute of Materials Research and Engineering, A*STAR, Singapore, 138634, Singapore
| | - Guijian Guan
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
| | - Ming-Yong Han
- Institute of Molecular Plus, Tianjin University, Tianjin, 300072, People's Republic of China.
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Liu Q, Cui S, Bian R, Pan E, Cao G, Li W, Liu F. The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications. ACS NANO 2024; 18:1778-1819. [PMID: 38179983 DOI: 10.1021/acsnano.3c05711] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.
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Affiliation(s)
- Qing Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Silin Cui
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Renji Bian
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Er Pan
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Guiming Cao
- School of Information Science and Technology, Xi Chang University, 615013 Xi'an, China
| | - Wenwu Li
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Department of Materials Science, Fudan University, Shanghai 200433, China
| | - Fucai Liu
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313099, China
- School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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Huang H, Zheng Y, Liu C, Zhang Z, Gao M, Wang J, Liu Y, Chu PK, Yu XF. Interfacial Engineering Enables Perovskite Heteroepitaxial Growth on Black Phosphorus for Flexible X-ray Detectors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2303229. [PMID: 37475501 DOI: 10.1002/smll.202303229] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/17/2023] [Revised: 06/12/2023] [Indexed: 07/22/2023]
Abstract
2D materials with atomic-scale thickness and mechanical robustness are required for flexible devices. The superior optoelectronic properties and high-Z atoms in metal halide perovskites render them desirable for X-ray detection, but the intrinsic brittleness is an obstacle hampering the applications in flexible detectors. Herein, an interfacial engineering strategy is demonstrated for the epitaxial growth of methylammonium lead bromide (MAPbBr3 ) on black phosphorus (BP) for flexible X-ray detectors. The mechanically robust, high-quality heterostructure consisting of a Pb transition layer is synthesized for the two-way bridging of BP and MAPbBr3 . Excellent optoelectronic properties such as a high X-ray sensitivity of 1,609 ± 122 µC Gy-1 cm-2 (80 times higher than that of the commercial amorphous Se), a fast response time of 40 ± 5 ms, as well as a low detection limit of 3 µGys-1 (about a fifteenth of the medical chest X-ray dose rate) are achieved from the simple and planar direct X-ray detector fabricated on an organic filter membrane. More importantly, these flat and simple devices are bendable and mechanically durable by exhibiting only 10% photocurrent degradation after 200 bending cycles. The novel heterostructure has great potential in large-area, flexible, and sensitive X-ray detection applications.
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Affiliation(s)
- Hao Huang
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Hubei Three Gorges Laboratory, Yichang, Hubei, 443007, P. R. China
| | - Ying Zheng
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou, 215123, P. R. China
| | - Chang Liu
- Hubei Three Gorges Laboratory, Yichang, Hubei, 443007, P. R. China
| | - Zhenyu Zhang
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Ming Gao
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Jiahong Wang
- Hubei Three Gorges Laboratory, Yichang, Hubei, 443007, P. R. China
| | - Yanliang Liu
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
| | - Paul K Chu
- Department of Physics, Department of Materials Science and Engineering, and Department of Biomedical Engineering, City University of Hong Kong, Tat Chee Avenue, Hong Kong, Kowloon, 999077, China
| | - Xue-Feng Yu
- Shenzhen Key Laboratory of Micro/Nano Biosensing, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, P. R. China
- Hubei Three Gorges Laboratory, Yichang, Hubei, 443007, P. R. China
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Aftab S, Hussain S, Al-Kahtani AA. Latest Innovations in 2D Flexible Nanoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301280. [PMID: 37104492 DOI: 10.1002/adma.202301280] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia
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Li Y, Wan Q, Xu N. Recent Advances in Moiré Superlattice Systems by Angle-Resolved Photoemission Spectroscopy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2305175. [PMID: 37689836 DOI: 10.1002/adma.202305175] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2023] [Revised: 08/16/2023] [Indexed: 09/11/2023]
Abstract
The last decade has witnessed a flourish in 2D materials including graphene and transition metal dichalcogenides (TMDs) as atomic-scale Legos. Artificial moiré superlattices via stacking 2D materials with a twist angle and/or a lattice mismatch have recently become a fertile playground exhibiting a plethora of emergent properties beyond their building blocks. These rich quantum phenomena stem from their nontrivial electronic structures that are effectively tuned by the moiré periodicity. Modern angle-resolved photoemission spectroscopy (ARPES) can directly visualize electronic structures with decent momentum, energy, and spatial resolution, thus can provide enlightening insights into fundamental physics in moiré superlattice systems and guides for designing novel devices. In this review, first, a brief introduction is given on advanced ARPES techniques and basic ideas of band structures in a moiré superlattice system. Then ARPES research results of various moiré superlattice systems are highlighted, including graphene on substrates with small lattice mismatches, twisted graphene/TMD moiré systems, and high-order moiré superlattice systems. Finally, it discusses important questions that remain open, challenges in current experimental investigations, and presents an outlook on this field of research.
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Affiliation(s)
- Yiwei Li
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Qiang Wan
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
| | - Nan Xu
- Institute for Advanced Studies (IAS), Wuhan University, Wuhan, 430072, China
- Wuhan Institute of Quantum Technology, Wuhan, 430206, China
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Aftab S, Hegazy HH. Emerging Trends in 2D TMDs Photodetectors and Piezo-Phototronic Devices. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205778. [PMID: 36732842 DOI: 10.1002/smll.202205778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/05/2022] [Revised: 01/20/2023] [Indexed: 05/04/2023]
Abstract
The piezo-phototronic effect shows promise with regards to improving the performance of 2D semiconductor-based flexible optoelectronics, which will potentially open up new opportunities in the electronics field. Mechanical exfoliation and chemical vapor deposition (CVD) influence the piezo-phototronic effect on a transparent, ultrasensitive, and flexible van der Waals (vdW) heterostructure, which allows the use of intrinsic semiconductors, such as 2D transition metal dichalcogenides (TMD). The latest and most promising 2D TMD-based photodetectors and piezo-phototronic devices are discussed in this review article. As a result, it is possible to make flexible piezo-phototronic photodetectors, self-powered sensors, and higher strain tolerance wearable and implantable electronics for health monitoring and generation of piezoelectricity using just a single semiconductor or vdW heterostructures of various nanomaterials. A comparison is also made between the functionality and distinctive properties of 2D flexible electronic devices with a range of applications made from 2D TMDs materials. The current state of the research about 2D TMDs can be applied in a variety of ways in order to aid in the development of new types of nanoscale optoelectronic devices. Last, it summarizes the problems that are currently being faced, along with potential solutions and future prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Hosameldin Helmy Hegazy
- Department of Physics, Faculty of Science, King Khalid University, Abha, P.O. Box 9004, Saudi Arabia
- 2Research Center for Advanced Materials Science (RCAMS), King Khalid University, Abha, 61413, P. O. Box 9004, Saudi Arabia
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Wu X, Xiao S, Quan J, Tian C, Gao G. Perylene-based molecular device: multifunctional spintronic and spin caloritronic applications. Phys Chem Chem Phys 2023; 25:7354-7365. [PMID: 36825532 DOI: 10.1039/d2cp05926f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/12/2023]
Abstract
Carbon-based magnetic molecular junctions are promising candidates for nanoscale spintronic applications because they are atomically thin and possess high stability and peculiar magnetism. Herein, based on first-principles and non-equilibrium Green's function, we designed a carbon-based molecular spintronic device composed of carbon atomic chains, zigzag-edged graphene nanoribbon (ZGNR), and a perylene molecule. Our results show that the device exhibits integrated spintronic and spin caloritronic functionalities, such as the bias-voltage driven spin filtering effect, negative differential resistance effect and giant magnetoresistance, temperature-gradient driven spin Seebeck effect, thermal spin filtering effect, high thermal magnetoresistance, and thermal colossal giant magnetoresistance. Furthermore, considering the phonon vibration effect, the spin and charge thermoelectric figure of merits (ZTsp and ZTch) can be enhanced and the peak of ZTsp is much larger than that of ZTch, indicating the excellent thermospin performance. The asymmetrical contact configuration between the carbon atomic chain and perylene/ZGNR inhibits the phonon thermal conductivity significantly, leading to the optimal ZTsp and ZTch of 2.4 and 0.5 at 300 K, respectively. These results suggest multifunctional spintronic and spin caloritronic applications for the perylene-based molecular device.
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Affiliation(s)
- Xuming Wu
- College of Physical Science and Technology, Lingnan Normal University, 524048 Zhanjiang, China. .,School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
| | - Shifa Xiao
- College of Physical Science and Technology, Lingnan Normal University, 524048 Zhanjiang, China.
| | - Jun Quan
- College of Physical Science and Technology, Lingnan Normal University, 524048 Zhanjiang, China.
| | - Chunhua Tian
- College of Physical Science and Technology, Lingnan Normal University, 524048 Zhanjiang, China.
| | - Guoying Gao
- School of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, China.
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Zhao T, Guo J, Li T, Wang Z, Peng M, Zhong F, Chen Y, Yu Y, Xu T, Xie R, Gao P, Wang X, Hu W. Substrate engineering for wafer-scale two-dimensional material growth: strategies, mechanisms, and perspectives. Chem Soc Rev 2023; 52:1650-1671. [PMID: 36744507 DOI: 10.1039/d2cs00657j] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
The fabrication of wafer-scale two-dimensional (2D) materials is a prerequisite and important step for their industrial applications. Chemical vapor deposition (CVD) is the most promising approach to produce high-quality films in a scalable way. Recent breakthroughs in the epitaxy of wafer-scale single-crystalline graphene, hexagonal boron nitride, and transition-metal dichalcogenides highlight the pivotal roles of substrate engineering by lattice orientation, surface steps, and energy considerations. This review focuses on the existing strategies and underlying mechanisms, and discusses future directions in epitaxial substrate engineering to deliver wafer-scale 2D materials for integrated electronics and photonics.
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Affiliation(s)
- Tiange Zhao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China. .,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Jiaxiang Guo
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Taotao Li
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China.
| | - Zhen Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Meng Peng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Fang Zhong
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yue Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Yiye Yu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Tengfei Xu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Runzhang Xie
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
| | - Pingqi Gao
- School of Materials, State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University, Guangzhou 510275, China.
| | - Xinran Wang
- National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, China. .,School of Integrated Circuits, Nanjing University, Suzhou, China.,Suzhou Laboratory, Suzhou, China
| | - Weida Hu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, China.
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11
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Guzzetta F, Jellett CW, Azadmanjiri J, Roy PK, Ashtiani S, Friess K, Sofer Z. A New, Thorough Look on Unusual and Neglected Group III-VI Compounds Toward Novel Perusals. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206430. [PMID: 36642833 DOI: 10.1002/smll.202206430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/19/2022] [Revised: 12/01/2022] [Indexed: 06/17/2023]
Abstract
The attention on group III-VI compounds in the last decades has been centered on the optoelectronic properties of indium and gallium chalcogenides. These outstanding properties are leading to novel advancements in terms of fundamental and applied science. One of the advantages of these compounds is to present laminated structures, which can be exfoliated down to monolayers. Despite the large knowledge gathered toward indium and gallium chalcogenides, the family of the group III-VI compounds embraces several other noncommon compounds formed by the other group III elements. These compounds present various crystal lattices, among which a great deal is offered from layered structures. Studies on aluminium chalcogenides show interesting potential as anodes in batteries and as semiconductors. Thallium (Tl), which is commonly present in the +1 oxidation state, is one of the key components in ternary chalcogenides. However, binary Tl-Q (Q = S, Se, Te) systems and derived films are still studied for their semiconducting and thermoelectric properties. This review aims to summarize the biggest features of these unusual materials and to shed some new light on them with the perspective that in the future, novel studies can revive these compounds in order to give rise to a new generation of technology.
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Affiliation(s)
- Fabrizio Guzzetta
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Cameron W Jellett
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Jalal Azadmanjiri
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Pradip Kumar Roy
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Saeed Ashtiani
- Department of Physical Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Karel Friess
- Department of Physical Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
| | - Zdeněk Sofer
- Department of Inorganic Chemistry, University of Chemistry and Technology Prague, Technická 5, Prague 6, 166 28, Czech Republic
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12
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Batool S, Idrees M, Han ST, Roy VAL, Zhou Y. Electrical Contacts With 2D Materials: Current Developments and Future Prospects. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206550. [PMID: 36587964 DOI: 10.1002/smll.202206550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Current electrical contact models are occasionally insufficient at the nanoscale owing to the wide variations in outcomes between 2D mono and multi-layered and bulk materials that result from their distinctive electrostatics and geometries. Contrarily, devices based on 2D semiconductors present a significant challenge due to the requirement for electrical contact with resistances close to the quantum limit. The next generation of low-power devices is already hindered by the lack of high-quality and low-contact-resistance contacts on 2D materials. The physics and materials science of electrical contact resistance in 2D materials-based nanoelectronics, interface configurations, charge injection mechanisms, and numerical modeling of electrical contacts, as well as the most pressing issues that need to be resolved in the field of research and development, will all be covered in this review.
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Affiliation(s)
- Saima Batool
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Muhammad Idrees
- Additive Manufacturing Institute, College of Mechatronics and Control Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- College of Electronics Science & Technology, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Vellaisamy A L Roy
- James Watt School of Engineering, University of Glasgow, Glasgow, G12 8QQ, UK
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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13
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Qi Y, Sadi MA, Hu D, Zheng M, Wu Z, Jiang Y, Chen YP. Recent Progress in Strain Engineering on Van der Waals 2D Materials: Tunable Electrical, Electrochemical, Magnetic, and Optical Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205714. [PMID: 35950446 DOI: 10.1002/adma.202205714] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2022] [Revised: 08/01/2022] [Indexed: 06/15/2023]
Abstract
Strain engineering is a promising way to tune the electrical, electrochemical, magnetic, and optical properties of 2D materials, with the potential to achieve high-performance 2D-material-based devices ultimately. This review discusses the experimental and theoretical results from recent advances in the strain engineering of 2D materials. Some novel methods to induce strain are summarized and then the tunable electrical and optical/optoelectronic properties of 2D materials via strain engineering are highlighted, including particularly the previously less-discussed strain tuning of superconducting, magnetic, and electrochemical properties. Also, future perspectives of strain engineering are given for its potential applications in functional devices. The state of the survey presents the ever-increasing advantages and popularity of strain engineering for tuning properties of 2D materials. Suggestions and insights for further research and applications in optical, electronic, and spintronic devices are provided.
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Affiliation(s)
- Yaping Qi
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Mohammad A Sadi
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
| | - Dan Hu
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
| | - Ming Zheng
- School of Materials Science and Physics, China University of Mining and Technology, Xuzhou, 221116, China
| | - Zhenping Wu
- State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China
| | - Yucheng Jiang
- Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Physical Science and Technology, Suzhou University of Science and Technology, Suzhou, Jiangsu, 215009, P. R. China
| | - Yong P Chen
- Department of Engineering Science, Faculty of Innovation Engineering, Macau University of Science and Technology, Av. Wai Long, Macao SAR, China
- Elmore Family School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN, 47907, USA
- Department of Physics and Astronomy and Birck Nanotechnology Center and Purdue Quantum Science and Engineering Institute, Purdue University, West Lafayette, IN, 47907, USA
- Institute of Physics and Astronomy and Villum Center for Hybrid Quantum Materials and Devices, Aarhus University, Aarhus-C, 8000, Denmark
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14
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Dolina ES, Kulyamin PA, Grekova AA, Kochaev AI, Maslov MM, Katin KP. Thermal Stability and Vibrational Properties of the 6,6,12-Graphyne-Based Isolated Molecules and Two-Dimensional Crystal. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1964. [PMID: 36903079 PMCID: PMC10003780 DOI: 10.3390/ma16051964] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/09/2022] [Revised: 02/17/2023] [Accepted: 02/22/2023] [Indexed: 06/18/2023]
Abstract
We report the geometry, kinetic energy, and some optical properties of the 6,6,12-graphyne-based systems. We obtained the values of their binding energies and structural characteristics such as bond lengths and valence angles. Moreover, using nonorthogonal tight-binding molecular dynamics, we carried out a comparative analysis of the thermal stability of 6,6,12-graphyne-based isolated fragments (oligomer) and two-dimensional crystals constructed on its basis in a wide temperature range from 2500 to 4000 K. We found the temperature dependence of the lifetime for the finite graphyne-based oligomer as well as for the 6,6,12-graphyne crystal using a numerical experiment. From these temperature dependencies, we obtained the activation energies and frequency factors in the Arrhenius equation that determine the thermal stability of the considered systems. The calculated activation energies are fairly high: 1.64 eV for the 6,6,12-graphyne-based oligomer and 2.79 eV for the crystal. It was confirmed that the thermal stability of the 6,6,12-graphyne crystal concedes only to traditional graphene. At the same time, it is more stable than graphene derivatives such as graphane and graphone. In addition, we present data on the Raman and IR spectra of the 6,6,12-graphyne, which will help distinguish it from the other carbon low-dimensional allotropes in the experiment.
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Affiliation(s)
- Ekaterina S. Dolina
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University “MEPhI”, Kashirskoe Sh. 31, Moscow 115409, Russia
| | - Pavel A. Kulyamin
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University “MEPhI”, Kashirskoe Sh. 31, Moscow 115409, Russia
| | - Anastasiya A. Grekova
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University “MEPhI”, Kashirskoe Sh. 31, Moscow 115409, Russia
| | - Alexey I. Kochaev
- Laboratory of Computational Design of Nanostructures, Nanodevices, and Nanotechnologies, Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov Str. 14/55, Moscow 119620, Russia
- Laboratory of Acoustic Microscopy, Science Institute of Biochemical Physics Named after N.M. Emanuel of the Russian Academy of Sciences, Kosygina Str. 4, Moscow 119334, Russia
- Research and Education Center “Silicon and Carbon Nanotechnologies”, Ulyanovsk State University, Leo Tolstoy Str. 42, Ulyanovsk 432017, Russia
| | - Mikhail M. Maslov
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University “MEPhI”, Kashirskoe Sh. 31, Moscow 115409, Russia
- Laboratory of Computational Design of Nanostructures, Nanodevices, and Nanotechnologies, Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov Str. 14/55, Moscow 119620, Russia
| | - Konstantin P. Katin
- Institute of Nanotechnologies in Electronics, Spintronics and Photonics, National Research Nuclear University “MEPhI”, Kashirskoe Sh. 31, Moscow 115409, Russia
- Laboratory of Computational Design of Nanostructures, Nanodevices, and Nanotechnologies, Research Institute for the Development of Scientific and Educational Potential of Youth, Aviatorov Str. 14/55, Moscow 119620, Russia
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15
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DFT exploration of the electronic, optical, phonon and thermoelectrical performances of bulk and monolayered AuCN. Theor Chem Acc 2023. [DOI: 10.1007/s00214-023-02960-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
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16
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M. Hizam SM, Al-Dhahebi AM, Mohamed Saheed MS. Recent Advances in Graphene-Based Nanocomposites for Ammonia Detection. Polymers (Basel) 2022; 14:5125. [PMID: 36501520 PMCID: PMC9739373 DOI: 10.3390/polym14235125] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 10/26/2022] [Accepted: 11/10/2022] [Indexed: 11/27/2022] Open
Abstract
The increasing demand to mitigate the alarming effects of the emission of ammonia (NH3) on human health and the environment has highlighted the growing attention to the design of reliable and effective sensing technologies using novel materials and unique nanocomposites with tunable functionalities. Among the state-of-the-art ammonia detection materials, graphene-based polymeric nanocomposites have gained significant attention. Despite the ever-increasing number of publications on graphene-based polymeric nanocomposites for ammonia detection, various understandings and information regarding the process, mechanisms, and new material components have not been fully explored. Therefore, this review summarises the recent progress of graphene-based polymeric nanocomposites for ammonia detection. A comprehensive discussion is provided on the various gas sensor designs, including chemiresistive, Quartz Crystal Microbalance (QCM), and Field-Effect Transistor (FET), as well as gas sensors utilising the graphene-based polymer nanocomposites, in addition to highlighting the pros and cons of graphene to enhance the performance of gas sensors. Moreover, the various techniques used to fabricate graphene-based nanocomposites and the numerous polymer electrolytes (e.g., conductive polymeric electrolytes), the ion transport models, and the fabrication and detection mechanisms of ammonia are critically addressed. Finally, a brief outlook on the significant progress, future opportunities, and challenges of graphene-based polymer nanocomposites for the application of ammonia detection are presented.
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Affiliation(s)
- Sara Maira M. Hizam
- Centre of Innovative Nanostructures and Nanodevices (COINN), Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
- Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
| | - Adel Mohammed Al-Dhahebi
- Centre of Innovative Nanostructures and Nanodevices (COINN), Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
- Department of Mechanical Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
| | - Mohamed Shuaib Mohamed Saheed
- Centre of Innovative Nanostructures and Nanodevices (COINN), Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
- Department of Mechanical Engineering, Universiti Teknologi PETRONAS, Seri Iskandar 32610, Perak, Malaysia
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17
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Yuan Y, Liu B, Li H, Li M, Song Y, Wang R, Wang T, Zhang H. Flexible Wearable Sensors in Medical Monitoring. BIOSENSORS 2022; 12:bios12121069. [PMID: 36551036 PMCID: PMC9775172 DOI: 10.3390/bios12121069] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/02/2022] [Revised: 11/20/2022] [Accepted: 11/21/2022] [Indexed: 05/31/2023]
Abstract
The popularity of health concepts and the wave of digitalization have driven the innovation of sensors in the medical field. Such continual development has made sensors progress in the direction of safety, flexibility, and intelligence for continuous monitoring of vital signs, which holds considerable promise for changing the way humans live and even treat diseases. To this end, flexible wearable devices with high performance, such as high sensitivity, high stability, and excellent biodegradability, have attracted strong interest from scientists. Herein, a review of flexible wearable sensors for temperature, heart rate, human motion, respiratory rate, glucose, and pH is highlighted. In addition, engineering issues are also presented, focusing on material selection, sensor fabrication, and power supply. Finally, potential challenges facing current technology and future directions of wearable sensors are also discussed.
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Affiliation(s)
- Yingying Yuan
- Liaoning Key Lab of Integrated Circuit and Biomedical Electronic System, School of Biomedical Engineering, Dalian University of Technology, Dalian 116024, China
| | - Bo Liu
- Liaoning Key Lab of Integrated Circuit and Biomedical Electronic System, School of Biomedical Engineering, Dalian University of Technology, Dalian 116024, China
- Faculty of Medicine, Dalian University of Technology, Dalian 116024, China
| | - Hui Li
- Department of Nursing, Cancer Hospital of Dalian University of Technology (Liaoning Cancer Hospital & Institute), Shenyang 110042, China
| | - Mo Li
- Department of Nursing, Cancer Hospital of Dalian University of Technology (Liaoning Cancer Hospital & Institute), Shenyang 110042, China
| | - Yingqiu Song
- Department of Radiotherapy, Cancer Hospital of Dalian University of Technology (Liaoning Cancer Hospital & Institute), Shenyang 110042, China
| | - Runze Wang
- School of Clinical Medicine, Chengdu Medical College, Chengdu 610500, China
| | - Tianlu Wang
- Faculty of Medicine, Dalian University of Technology, Dalian 116024, China
- Department of Radiotherapy, Cancer Hospital of Dalian University of Technology (Liaoning Cancer Hospital & Institute), Shenyang 110042, China
| | - Hangyu Zhang
- Liaoning Key Lab of Integrated Circuit and Biomedical Electronic System, School of Biomedical Engineering, Dalian University of Technology, Dalian 116024, China
- Faculty of Medicine, Dalian University of Technology, Dalian 116024, China
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18
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Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU. Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe 2 van der Waals Heterostructures for Excellent Photodetector and NO 2 Gas Sensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3713. [PMID: 36364489 PMCID: PMC9658387 DOI: 10.3390/nano12213713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/19/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe2) heterojunction. The prepared Gr/ReSe2-HS demonstrated an excellent mobility of 380 cm2/Vs, current on/off ratio ~ 104, photoresponsivity (R ~ 74 AW-1 @ 82 mW cm-2), detectivity (D* ~ 1.25 × 1011 Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe2 device (mobility = 36 cm2 V-1s-1, Ion/Ioff ratio = 1.4 × 105-1.8 × 105, R = 11.2 AW-1, D* = 1.02 × 1010, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe2 (45 meV at Vbg = 40 V) and Gr/ReSe2-HS (9.02 meV at Vbg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO2 at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe2-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Adeela Rehman
- Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Othman Hakami
- Department of Chemistry, Faculty of Science, Jazan University, Jazan, Saudi Arabia
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Mohammed A. Amin
- Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
| | - Muhammad Ikram
- Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore, Lahore 54000, Punjab, Pakistan
| | - Supriya A. Patil
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
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Nan X, Wang X, Kang T, Zhang J, Dong L, Dong J, Xia P, Wei D. Review of Flexible Wearable Sensor Devices for Biomedical Application. MICROMACHINES 2022; 13:1395. [PMID: 36144018 PMCID: PMC9505309 DOI: 10.3390/mi13091395] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Revised: 08/22/2022] [Accepted: 08/23/2022] [Indexed: 05/26/2023]
Abstract
With the development of cross-fertilisation in various disciplines, flexible wearable sensing technologies have emerged, bringing together many disciplines, such as biomedicine, materials science, control science, and communication technology. Over the past few years, the development of multiple types of flexible wearable devices that are widely used for the detection of human physiological signals has proven that flexible wearable devices have strong biocompatibility and a great potential for further development. These include electronic skin patches, soft robots, bio-batteries, and personalised medical devices. In this review, we present an updated overview of emerging flexible wearable sensor devices for biomedical applications and a comprehensive summary of the research progress and potential of flexible sensors. First, we describe the selection and fabrication of flexible materials and their excellent electrochemical properties. We evaluate the mechanisms by which these sensor devices work, and then we categorise and compare the unique advantages of a variety of sensor devices from the perspective of in vitro and in vivo sensing, as well as some exciting applications in the human body. Finally, we summarise the opportunities and challenges in the field of flexible wearable devices.
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Affiliation(s)
- Xueli Nan
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
- School of Biomedical Engineering, Shanghai Jiao Tong University, Shanghai 200030, China
| | - Xin Wang
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
| | - Tongtong Kang
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
| | - Jiale Zhang
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
| | - Lanxiao Dong
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
| | - Jinfeng Dong
- School of Automation and Software Engineering, Shanxi University, Taiyuan 030006, China
| | - Peng Xia
- School of Mathematical Sciences, Shanxi University, Taiyuan 030006, China
| | - Donglai Wei
- School of Mathematical Sciences, Shanxi University, Taiyuan 030006, China
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20
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Tong T, Tang W, Xiao S, Liang J. Antiviral Effects of Heparan Sulfate Analogue‐Modified Two‐Dimensional MXene Nanocomposites on PRRSV and SARS‐CoV‐2. ADVANCED NANOBIOMED RESEARCH 2022; 2:2200067. [PMID: 36249178 PMCID: PMC9538433 DOI: 10.1002/anbr.202200067] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Revised: 07/03/2022] [Indexed: 01/09/2023] Open
Abstract
Due to the worldwide impact of viruses such as SARS‐CoV‐2, researchers have paid extensive attention to antiviral reagents against viruses. Despite extensive research on two‐dimensional (2D) transition metal carbides (MXenes) in the field of biomaterials, their antiviral effects have received little attention. In this work, heparan sulfate analogue (sodium 3‐mercapto‐1‐propanesulfonate, MPS) modified 2D MXene nanocomposites (Ti3C2‐Au‐MPS) for prevention of viral infection are prepared and investigated using severe acute respiratory syndrome coronavirus 2 (SARS‐CoV‐2) pseudovirus and porcine reproductive and respiratory syndrome virus (PRRSV) as two model viruses. Ti3C2‐Au‐MPS nanocomposites are shown to possess antiviral properties in the different stages of PRRSV proliferation, such as direct interaction with PRRS virions and inhibiting their adsorption and penetration in the host cell. Additionally, Ti3C2‐Au‐MPS nanocomposites can strongly inhibit the infection of SARS‐CoV‐2 pseudovirus as shown by the contents of its reporter gene GFP and luciferase. These results demonstrate the potential broad‐spectrum antiviral property of Ti3C2‐Au‐MPS nanocomposites against viruses with the receptor of heparin sulfate. This work sheds light on the specific antiviral effects of MXene‐based nanocomposites against viruses and may facilitate further exploration of their antiviral applications.
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Affiliation(s)
- Ting Tong
- College of Science College of Resource and Environment State Key Laboratory of Agricultural Microbiology Huazhong Agricultural University Wuhan 430070 P. R. China
| | - Wantao Tang
- College of Science College of Resource and Environment State Key Laboratory of Agricultural Microbiology Huazhong Agricultural University Wuhan 430070 P. R. China
| | - Shaobo Xiao
- College of Veterinary Medicine State Key Laboratory of Agricultural Microbiology Key Laboratory of Preventive Veterinary Medicine in Hubei Province Huazhong Agricultural University Wuhan 430070 P. R. China
| | - Jiangong Liang
- College of Science College of Resource and Environment State Key Laboratory of Agricultural Microbiology Huazhong Agricultural University Wuhan 430070 P. R. China
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