Superlinear composition-dependent photocurrent in CVD-grown monolayer MoS2(1-x)Se2x alloy devices

Photoelectric Properties of GaS1-xSex (0 ≤ x ≤ 1) Layered Crystals

In this study, the photoelectric properties of a complete series of GaS1-xSex (0 ≤ x ≤ 1) layered crystals are investigated. The photoconductivity spectra indicate a decreasing bandgap of GaS1-xSex as the Se composition x increases. Time-resolved photocurrent measurements reveal a significant improvement in the response of GaS1-xSex to light with increasing x. Frequency-dependent photocurrent measurements demonstrate that both pure GaS crystals and GaS1-xSex ternary alloy crystals exhibit a rapid decrease in photocurrents with increasing illumination frequency. Crystals with lower x exhibit a faster decrease in photocurrent. However, pure GaSe crystal maintains its photocurrent significantly even at high frequencies. Measurements for laser-power-dependent photoresponsivity and bias-voltage-dependent photoresponsivity also indicate an increase in the photoresponsivity of GaS1-xSex as x increases. Overall, the photoresponsive performance of GaS1-xSex is enhanced with increasing x, and pure GaSe exhibits the best performance. This result contradicts the findings of previous reports. Additionally, the inverse trends between bandgap and photoresponsivity with increasing x suggest that GaS1-xSex-based photodetectors could potentially offer a high response and wavelength-selectivity for UV and visible light detection. Thus, this work provides novel insights into the photoelectric characteristics of GaS1-xSex layered crystals and highlights their potential for optoelectronic applications.

Dynamics of interfacial charge transfer between CsPbBr3perovskite nanocrystals and molecular acceptors for photodetection application

Perovskite nanocrystals (NCs) recently emerged as a suitable candidate for optoelectronic applications because of its simplistic synthesis approach and superior optical properties. For better device performance, the effective absorption of incident photons and the understanding of charge transfer (CT) process are the basic requirements. Herein, we investigate the interfacial charge transfer dynamics of CsPbBr3NCs in the presence of different molecular acceptors; 7,7,8,8-Tetracyanoquinodimethane (TCNQ) and 11,11,12,12 tetracyanonaphtho-2,6-quinodimethane (TCNAQ). The vivid change in CT dynamics at the interfaces of NCs and two different molecular acceptors (TCNQ and TCNAQ) has been observed. The results demonstrate that the ground state complex formation in the presence of TCNQ acts as additional driving force to accelerate the charge transfer between the NCs and molecular acceptor. Moreover, this donor (NCs)-acceptor (TCNQ, TCNAQ) system results in the higher absorption of incident photons. Finally, the photo detector based on CsPbBr3-TCNQ system was fabricated for the first time. The device exhibited a high on-off ratio (104). Furthermore, the CsPbBr3-TCNQ photodetector shows a fast photoresponse times of 180 ms/110 ms (rise/decay time) with a specific detectivity (D*) of 5.2 × 1011Jones. The simple synthesis and outstanding photodetection abilities of this perovskite NCs-molecular acceptor system make them potential candidates for optoelectronic applications.

Solution-Processed Heterojunction Photodiodes Based on WSe2 Nanosheet Networks

Solution-processed photodetectors incorporating liquid-phase-exfoliated transition metal dichalcogenide nanosheets are widely reported. However, previous studies mainly focus on the fabrication of photoconductors, rather than photodiodes which tend to be based on heterojunctions and are harder to fabricate. Especially, there are rare reports on introducing commonly used transport layers into heterojunctions based on nanosheet networks. In this study, a reliable solution-processing method is reported to fabricate heterojunction diodes with tungsten selenide (WSe2 ) nanosheets as the optical absorbing material and PEDOT: PSS and ZnO as injection/transport-layer materials. By varying the transport layer combinations, the obtained heterojunctions show rectification ratios of up to ≈104 at ±1 V in the dark, without relying on heavily doped silicon substrates. Upon illumination, the heterojunction can be operated in both photoconductor and photodiode modes and displays self-powered behaviors at zero bias.

In-Sensor Computing: Materials, Devices, and Integration Technologies

The number of sensor nodes in the Internet of Things is growing rapidly, leading to a large volume of data generated at sensory terminals. Frequent data transfer between the sensors and computing units causes severe limitations on the system performance in terms of energy efficiency, speed, and security. To efficiently process a substantial amount of sensory data, a novel computation paradigm that can integrate computing functions into sensor networks should be developed. The in-sensor computing paradigm reduces data transfer and also decreases the high computing complexity by processing data locally. Here, the hardware implementation of the in-sensor computing paradigm at the device and array levels is discussed. The physical mechanisms that lead to unique sensory response characteristics and their corresponding computing functions are illustrated. In particular, bioinspired device characteristics enable the implementation of the functionalities of neuromorphic computation. The integration technology is also discussed and the perspective on the future development of in-sensor computing is provided.

Giant Superlinear Power Dependence of Photocurrent Based on Layered Ta2 NiS5 Photodetector

Photodetector based on two-dimensional (2D) materials is an ongoing quest in optoelectronics. 2D photodetectors are generally efficient at low illuminating power but suffer severe recombination processes at high power, which results in the sublinear power-dependent photoresponse and lower optoelectronic efficiency. The desirable superlinear photocurrent is mostly achieved by sophisticated 2D heterostructures or device arrays, while 2D materials rarely show intrinsic superlinear photoresponse. This work reports the giant superlinear power dependence of photocurrent based on multilayer Ta₂ NiS₅ . While the fabricated photodetector exhibits good sensitivity (3.1 mS W^-1 per □) and fast photoresponse (31 µs), the bias-, polarization-, and spatial-resolved measurements point to an intrinsic photoconductive mechanism. By increasing the incident power density from 1.5 to 200 µW µm^-2 , the photocurrent power dependence varies from sublinear to superlinear. At higher illuminating conditions, prominent superlinearity is observed with a giant power exponent of γ = 1.5. The unusual photoresponse can be explained by a two-recombination-center model where density of states of the recombination centers (RC) effectively closes all recombination channels. The photodetector is integrated into camera for taking photos with enhanced contrast due to superlinearity. This work provides an effective route to enable higher optoelectronic efficiency at extreme conditions.

Piezo-phototronic effect regulated broadband photoresponse of a-Ga2O3/ZnO heterojunction

Amorphous Ga₂O₃ (a-Ga₂O₃) films have attracted considerable attention in the field of photodetectors due to their excellent optical absorption response and photoelectric properties. However, there are few studies that have utilized the piezo-phototronic effect to regulate the broadband photoresponse of Ga₂O₃-based photodetectors. Here, a flexible a-Ga₂O₃/ZnO heterojunction was constructed, which demonstrated a broadband response range from deep ultraviolet (265 nm) to the near-infrared (1060 nm) and realized a bidirectional adjustable photocurrent response via the piezo-phototronic effect. Under 265 nm illumination and 0.5 V bias, the responsivity and detectivity of the a-Ga₂O₃/ZnO heterojunction reached up to 12.19 A W^-1 and 4.71 × 10¹¹ Jones under 0.164% compressive strain, corresponding to enhancements of 67.7% and 66.8% compared to those under a strain-free state, respectively. Moreover, the broadband photoresponse of the a-Ga₂O₃/ZnO heterojunction beyond the bandgap limit was tunable under bidirectional strain. The working mechanism of photoresponse performance for the a-Ga₂O₃/ZnO heterojunction at different wavelengths was elucidated in detail. Oxygen vacancy-assisted carrier generation was found to be influenced by the wavelength of incident light, which mainly determined the broadband photoresponse of the heterojunction. The modulation of the a-Ga₂O₃/ZnO heterojunction photodetector was interpreted in light of the strain-induced regulation of the barrier height. This work represents an important step toward the development of adjustable broadband photodetectors based on a-Ga₂O₃ films.

Type-I PtS2/MoS2 van der Waals heterojunctions with tunable photovoltaic effects and high photosensitivity

Recent advances in two-dimensional (2D) materials play an essential role in boosting modern electronics and optoelectronics. Thus far, transition metal dichalcogenides (TMDs) as emerging members of 2D materials, and the van der Waals heterostructures (vdWHs) based on TMDs have been extensively investigated owing to their prominent capabilities and unique crystal structures. In this work, an original vdWH composed of molybdenum disulfide (MoS₂) and platinum disulfide (PtS₂) was comprehensively studied as a field-effect transistor (FET) and photodetector. A gate-tunable rectifying behavior was obtained, stemming from the band design of PtS₂/MoS₂ vdWH. Upon 685 nm laser illumination, it also exhibited a superior photodetection performance with a distinctly high photoresponsivity of 403 A W^-1, a comparable detectivity of 1.07 × 10¹¹ Jones, and an excellent external quantum efficiency of 7.32 × 10⁴%. More importantly, fast rise (24 ms) and decay (21 ms) times were obtained under 685 nm light illumination attributed to the unilateral depletion region structure. Further, the photovoltaic effect and photocurrent of the heterojunction could be modulated by a back gate voltage. All these results indicated that such 2D-TMD-based vdWHs provide a new idea for realizing high-performance electronic and optoelectronic devices.

Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2 Heterojunctions

The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS₂ nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 10⁴, fast response of 50 μs, and high detectivity of 1.64 × 10¹¹ Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

Nontrivial Doping Evolution of Electronic Properties in Ising-Superconducting Alloys

Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, the atomic-scale evolution of the electronic ground state of a monolayer of Nb_{1- δ} Mo_δ Se₂ across the entire alloy composition range (0 < δ < 1) is investigated using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe₂ to MoSe₂ ) is studied. The measurements enable extraction of the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with δ. Furthermore, it is demonstrated that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder and further shown that the superconducting T_C changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. Mo doping is shown to decrease the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. These results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.

Highly Nonlinear Biexcitonic Photocurrent from Ultrafast Interlayer Charge Transfer

Strong Coulomb interactions in monolayer semiconductors allow them to host optically active large many-body states, such as the five-particle state, charged biexciton. Strong nonlinear light absorption by the charged biexciton under spectral resonance, coupled with its charged nature, makes it intriguing for nonlinear photodetection─an area that is hitherto unexplored. Using the high built-in vertical electric field in an asymmetrically designed few-layer graphene encapsulated 1L-WS₂ heterostructure, here we report a large, highly nonlinear photocurrent arising from the strong absorption by two charged biexciton species under zero external bias (self-powered mode). Time-resolved measurement reveals that the generated charged biexcitons transfer to the few-layer graphene in a time scale of sub-5 ps, indicating an ultrafast intrinsic limit of the photoresponse. By using single- and two-color photoluminescence excitation spectroscopy, we show that the two biexcitonic peaks originate from bright-dark and bright-bright exciton-trion combinations. Such innate nonlinearity in the photocurrent due to its biexcitonic origin, coupled with the ultrafast response due to swift interlayer charge transfer, exemplifies the promise of manipulating many-body effects in monolayers toward viable optoelectronic applications.

Equilibrium phase diagrams of isostructural and heterostructural two-dimensional alloys from first principles

Alloying is a successful strategy for tuning the phases and properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). To accelerate the synthesis of TMDC alloys, we present a method for generating temperature-composition equilibrium phase diagrams by combining first-principles total-energy calculations with thermodynamic solution models. This method is applied to three representative 2D TMDC alloys: an isostructural alloy, MoS_2(1-x)Te_2x , and two heterostructural alloys, Mo_1-x W _x Te₂ and WS_2(1-x)Te_2x . Using density-functional theory and special quasi-random structures, we show that the mixing enthalpy of these binary alloys can be reliably represented using a sub-regular solution model fitted to the total energies of relatively few compositions. The cubic sub-regular solution model captures 3-body effects that are important in TMDC alloys. By comparing phase diagrams generated with this method to those calculated with previous methods, we demonstrate that this method can be used to rapidly design phase diagrams of TMDC alloys and related 2D materials.

Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS2x Se2-2x Spiral Nanosheets

Electronic properties at the interfaces between different-composition domains of 2D-alloys are key for their optical, electronic, and optoelectronic applications. Understanding the interfacial electronic structures and carrier dynamics is essential for designing and fabricating devices that use these alloys. Here, WS_2x Se_2-2x spiral nanosheets are prepared using the physical vapor deposition method, and the nonlinear optical and electronic properties, as well as the carrier dynamics at the interfaces between the WS and WSe domains, are studied. Second-harmonic generation tests demonstrate that these nanosheets exhibit a very strong layer-dependent nonlinear optical effect. Atomic-resolution scanning tunneling microscopy (STM) and spectroscopy (STS) measurements reveal that S and Se atoms are non-uniformly distributed, forming WS domains, WSe domains, and defect-related areas. Atomic STM images and STS maps reveal enhanced local density of states by electron scattering at the WS/WSe interfaces, providing a detailed nanoscale interpretation of the S/Se-ratio-dependent lifetimes observed in pump-probe spectroscopy measurements. This work provides valuable interfacial characterization of 2D-alloy materials, using state-of-the-art methods with high temporal and spatial resolutions. The obtained insights are likely to be useful for prospective applications.

Reversible Manipulation of Photoconductivity Caused by Surface Oxygen Vacancies in Perovskite Stannates with Ultraviolet Light

Programmable optoelectronic devices call for the reversible control of the photocarrier recombination process by in-gap states in oxide semiconductors. However, previous approaches to produce oxygen vacancies as a source of in-gap states in oxide semiconductors have hampered the reversible formation of oxygen vacancies and their related phenomena. Here, a new strategy to manipulate the 2D photoconductivity from perovskite stannates is demonstrated by exploiting spatially selective photochemical reaction under ultraviolet illumination at room temperature. Remarkably, the ideal trap-free photocurrent of air-illuminated BaSnO₃ (≈200 pA) is reversibly switched into three orders of magnitude higher photocurrent of vacuum-illuminated BaSnO₃ (≈335 nA) with persistent photoconductivity depending on ambient oxygen pressure under illumination. Multiple characterizations elucidate that ultraviolet illumination of BaSnO₃  under low oxygen pressure induces surface oxygen vacancies as a result of surface photolysis combined with the low oxygen-diffusion coefficient of BaSnO₃ ; the concentrated oxygen vacancies are likely to induce a two-step transition of photocurrent response by changing the characteristics of in-gap states from the shallow level to the deep level. These results suggest a novel strategy that uses light-matter interaction in a reversible and spatially confined way to manipulate functionalities related to surface defect states, for the emerging applications using newly discovered oxide semiconductors.

Tuning 2D magnetism in Fe3+XGeTe2 films by element doping

Two-dimensional (2D) ferromagnetic materials have been discovered with tunable magnetism and orbital-driven nodal-line features. Controlling the 2D magnetism in exfoliated nanoflakes via electric/magnetic fields enables a boosted Curie temperature (T_C) or phase transitions. One of the challenges, however, is the realization of high T_C 2D magnets that are tunable, robust and suitable for large scale fabrication. Here, we report molecular-beam epitaxy growth of wafer-scale Fe_3+XGeTe₂ films with T_C above room temperature. By controlling the Fe composition in Fe_3+XGeTe₂, a continuously modulated T_C in a broad range of 185–320 K has been achieved. This widely tunable T_C is attributed to the doped interlayer Fe that provides a 40% enhancement around the optimal composition X = 2. We further fabricated magnetic tunneling junction device arrays that exhibit clear tunneling signals. Our results show an effective and reliable approach, i.e. element doping, to producing robust and tunable ferromagnetism beyond room temperature in a large-scale 2D Fe_3+XGeTe₂ fashion.

Large-scale MoS2(1-x)Se2xmonolayers synthesized by confined-space CVD

Alloy engineering is efficient in modulating the electronic structure and physical and chemical properties of Transition metal dichalcogenides (TMDs). Here, we develop an efficient and simple confined-space CVD strategy by using a smaller quartz boat nested in a larger quartz boat for the preparation of ternary alloy MoS_2(1-x)Se_2xmonolayers on SiO₂/Si substrates with controllable composition. The effect of hydrogen ratio of the mixed carrier gas (Ar/H₂) on the resultant flakes are systematically investigated. A hydrogon ratio of 15% is demonstrated to be the most appropriate to synthesize large size (more than 400μm) single crystalline MoS_2(1-x)Se_2xalloy monolayers. The composition of the alloy can also be changed in a full range (2x= 0-2) by changing the weight ratio of Se and S powder. The as-grown monolayer MoS_2(1-x)Se_2xalloys present continuously high crystal quality in terms of Raman and PL measurements. Furthermore, to visible light (532 nm), the MoS_2(1-x)Se_2xbased photodetectors display wonderful photoresponse with a fast response of less than 50 ms. Our work may be usedful in directing the synthesis of TMDs alloys as well as their optoelectronic applications.

High-Performance p-n Junction Transition Metal Dichalcogenide Photovoltaic Cells Enabled by MoOx Doping and Passivation

Layered semiconducting transition metal dichalcogenides (TMDs) are promising materials for high-specific-power photovoltaics due to their excellent optoelectronic properties. However, in practice, contacts to TMDs have poor charge carrier selectivity, while imperfect surfaces cause recombination, leading to a low open-circuit voltage (V_OC) and therefore limited power conversion efficiency (PCE) in TMD photovoltaics. Here, we simultaneously address these fundamental issues with a simple MoO_x (x ≈ 3) surface charge-transfer doping and passivation method, applying it to multilayer tungsten disulfide (WS₂) Schottky-junction solar cells with initially near-zero V_OC. Doping and passivation turn these into lateral p-n junction photovoltaic cells with a record V_OC of 681 mV under AM 1.5G illumination, the highest among all p-n junction TMD solar cells with a practical design. The enhanced V_OC also leads to record PCE in ultrathin (<90 nm) WS₂ photovoltaics. This easily scalable doping and passivation scheme is expected to enable further advances in TMD electronics and optoelectronics.

Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys

Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, V_xMo_1-xSe₂, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe₂ in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D V_xMo_1-xSe₂ alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe₂, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D V_xMo_1-xSe₂ alloys, useful for the future design of 2D electronic devices.

Quasi-Binary Transition Metal Dichalcogenide Alloys: Thermodynamic Stability Prediction, Scalable Synthesis, and Application

Transition metal dichalcogenide (TMDCs) alloys could have a wide range of physical and chemical properties, ranging from charge density waves to superconductivity and electrochemical activities. While many exciting behaviors of unary TMDCs have been demonstrated, the vast compositional space of TMDC alloys has remained largely unexplored due to the lack of understanding regarding their stability when accommodating different cations or chalcogens in a single-phase. Here, a theory-guided synthesis approach is reported to achieve unexplored quasi-binary TMDC alloys through computationally predicted stability maps. Equilibrium temperature-composition phase diagrams using first-principles calculations are generated to identify the stability of 25 quasi-binary TMDC alloys, including some involving non-isovalent cations and are verified experimentally through the synthesis of a subset of 12 predicted alloys using a scalable chemical vapor transport method. It is demonstrated that the synthesized alloys can be exfoliated into 2D structures, and some of them exhibit: i) outstanding thermal stability tested up to 1230 K, ii) exceptionally high electrochemical activity for the CO₂ reduction reaction in a kinetically limited regime with near zero overpotential for CO formation, iii) excellent energy efficiency in a high rate Li-air battery, and iv) high break-down current density for interconnect applications. This framework can be extended to accelerate the discovery of other TMDC alloys for various applications.

Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe3 O4 Nanosheets

The ultrabroadband spectrum detection from ultraviolet (UV) to long-wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR-detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high-performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air-stable nonlayered ultrathin Fe₃ O₄ nanosheets synthesized via a space-confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity (R) of 561.2 A W^-1 , external quantum efficiency (EQE) of 6.6 × 10³ %, and detectivity (D*) of 7.42 × 10⁸ Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.

Phase Transition across Anisotropic NbS3 and Direct Gap Semiconductor TiS3 at Nominal Titanium Alloying Limit

Alloying selected layered transitional metal trichalcogenides (TMTCs) with unique chain-like structures offers the opportunities for structural, optical, and electrical engineering thus expands the regime of this class of pseudo-one-dimensional materials. Here, the novel phase transition in anisotropic Nb_{(1- x )} Ti_x S₃ alloys is demonstrated for the first time. Results show that Nb_{(1- x )} Ti_x S₃ can be fully alloyed across the entire composition range from triclinic-phase NbS₃ to monoclinic-phase TiS₃ . Surprisingly, incorporation of a small concentration of Ti (x ≈ 0.05-0.18) into NbS₃ host matrix is sufficient to induce triclinic to monoclinic transition. Theoretical studies suggest that Ti atoms effectively introduce hole doping, thus rapidly decreases the total energy of monoclinic phase and induces the phase transition. When alloyed, crystalline and optical anisotropy are largely preserved as evidenced by high resolution transmission electron microscopy and angle-resolved Raman spectroscopy. Further Raman measurements identify Raman modes to determine crystalline anisotropy direction and offer insights into the degree of anisotropy. Overall results introduce Nb_{(1- x )} Ti_x S₃ as a new and easy phase change material and mark the first phase engineering in anisotropic van der Waals (vdW) trichalcogenide systems for their potential applications in two-dimensional superconductivity, electronics, photonics, and information technologies.

Two-Dimensional Transition Metal Chalcogenides for Alkali Metal Ions Storage

On the heels of exacerbating environmental concerns and ever-growing global energy demand, development of high-performance renewable energy-storage and -conversion devices has aroused great interest. The electrode materials, which are the critical components in electrochemical energy storage (EES) devices, largely determine the energy-storage properties, and the development of suitable active electrode materials is crucial to achieve efficient and environmentally friendly EES technologies albeit the challenges. Two-dimensional transition-metal chalcogenides (2D TMDs) are promising electrode materials in alkali metal ion batteries and supercapacitors because of ample interlayer space, large specific surface areas, fast ion-transfer kinetics, and large theoretical capacities achieved through intercalation and conversion reactions. However, they generally suffer from low electronic conductivities as well as substantial volume change and irreversible side reactions during the charge/discharge process, which result in poor cycling stability, poor rate performance, and low round-trip efficiency. In this Review, recent advances of 2D TMDs-based electrode materials for alkali metal-ion energy-storage devices with the focus on lithium-ion batteries (LIBs), sodium-ion batteries (SIBs), potassium-ion batteries (PIBs), high-energy lithium-sulfur (Li-S), and lithium-air (Li-O₂ ) batteries are described. The challenges and future directions of 2D TMDs-based electrode materials for high-performance LIBs, SIBs, PIBs, Li-S, and Li-O₂ batteries as well as emerging alkali metal-ion capacitors are also discussed.

Light intensity-induced photocurrent switching effect

A better control over processes responsible for the photocurrent generation in semiconductors and nanocomposites is essential in the fabrication of photovoltaic devices, efficient photocatalysts and optoelectronic elements. Therefore, new approaches towards photochemical properties tuning are intensively searched for. Among numerous parameters, the photocurrent polarity is of great importance to the overall performance of a device. Usually, the polarity is controlled through an alignment of electronic states/bands, tailoring of applied potential or suitable selection of incident light wavelengths. In most scenarios though, the influence of light intensity is somehow neglected and either some arbitrarily chosen, natural conditions are mimicked or this parameter is varied only in a narrow range. Here we present a ternary nanocomposite in which the persistent photocurrent polarity switching is achieved through changes in the light intensity. We also present arguments suggesting this behaviour is of a general character and should be considered also in other photochemical systems.

Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction

Excellent electrical and photoelectrical study of vertical integration by layered two-dimensional materials having gate tunable broad spectral (UV-Vis-NIR) light detection response.

Self-Powered SnS1-xSex Alloy/Silicon Heterojunction Photodetectors with High Sensitivity in a Wide Spectral Range

Alloy engineering and heterostructures designing are two efficient methods to improve the photosensitivity of two-dimensional (2D) material-based photodetectors. Herein, we report the first-principle calculation about the band structure of SnS_1-xSe_x (0 ≤ x ≤ 1) and synthesize these alloy nanosheets. Systematic measurements indicate that SnS_0.25Se_0.75 exhibits the highest hole mobility (0.77 cm²·V^-1·s^-1) and a moderate photoresponsivity (4.44 × 10² A·W^-1) with fast response speed (32.1/57.5 ms) under 635 nm irradiation. Furthermore, to reduce the dark current and strengthen the light absorption, a self-driven SnS_0.25Se_0.75/n-Si device has been fabricated. The device achieved a preeminent photo-responsivity of 377 mA·W^-1, a detectivity of ∼10¹¹ Jones and I_light/I_dark ratio of ∼4.5 × 10². In addition, the corresponding rising/decay times are as short as 4.7/3.9 ms. Moreover, a broadband sensitivity from 635 to 1200 nm is obtained and the related photoswitching curves are stable and reproducibility. Noticeably, the above parameters are comparable or superior to the most of reported group IV_A layered materials-based self-driven photodetectors. Last, the synergistic effects between the SnS_0.25Se_0.75 nanosheets and the n-Si have been discussed by the band alignment. These brilliant results will pave a new pathway for the development of next generation 2D alloy-based photoelectronic devices.

Sn-Doping Enhanced Ultrahigh Mobility In1-xSnxSe Phototransistor

Two-dimensional ternary materials are attracting widespread interest because of the additional degree of freedom available to tailor the material property for a specific application. An In_1-xSn_xSe phototransistor possessing tunable ultrahigh mobility by Sn-doping engineering is demonstrated in this study. A striking feature of In_1-xSn_xSe flakes is the reduction in the oxide phase compared to undoped InSe, which is validated by spectroscopic analyses. Moreover, first-principles density functional calculations performed for the In_1-xSn_xSe crystal system reveal the same effective mass when doped with Sn atoms. Hence, because of an increased lifetime owing to the enhanced crystal quality, the carriers in In_1-xSn_xSe have higher mobility than in InSe. The internally boosted electrical properties of In_1-xSn_xSe exhibit ultrahigh mobility of 2560 ± 240 cm² V^-1 s^-1 by suppressing the interfacial traps with substrate modification and channel encapsulation. As a phototransistor, the ultrathin In_1-xSn_xSe flakes are highly sensitive with a detectivity of 10¹⁴ Jones. It possesses a large photoresponsivity and photogain (V_g = 40 V) as high as 3 × 10⁵ A W^-1 and 0.5 × 10⁶, respectively. The obtained results outperform all previously reported performances of InSe-based devices. Thus, the doping-engineered In_1-xSn_xSe-layered semiconductor finds a potential application in optoelectronics and meets the demand for faster electronic technology.

Nonlayered Two-Dimensional Defective Semiconductor γ-Ga2S3 toward Broadband Photodetection

Two-dimensional (2D) materials exhibit high sensitivity to structural defects due to the nature of interface-type materials, and the corresponding structural defects can effectively modulate their inherent properties in turn, giving them a wide application range in high-performance and functional devices. 2D γ-Ga₂S₃ is a defective semiconductor with outstanding optoelectronic properties. However, its controllable preparation has not been implemented yet, which hinders exploring its potential applications. In this work, we introduce nonlayered γ-Ga₂S₃ into the 2D materials family, which was successfully synthesized via the space-confined chemical vapor deposition method. Its intriguing defective structure are revealed by high-resolution transmission electron microscopy and temperature-dependent cathodoluminescence spectra, which endow the γ-Ga₂S₃-based device with a broad photoresponse from the ultraviolet to near-infrared region and excellent photoelectric conversion capability. Simultaneously, the device also exhibits excellent ultraviolet detection ability ( R_λ = 61.3 A W^-1, I_on /I_off = 851, EQE = 2.17× 10⁴ %, D* = 1.52× 10¹⁰ Jones @350 nm), and relatively fast response (15 ms). This work provides a feasible way to fabricate ultrathin nonlayered materials and explore the potential applications of a 2D defective semiconductor in high-performance broadband photodetection, which also suggests a promising future of defect creation in optimizing photoelectric properties.

Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport

Chemical doping constitutes an effective route to alter the electronic, chemical, and optical properties of two-dimensional transition metal dichalcogenides (2D-TMDs). We used a plasma-assisted method to introduce carbon-hydrogen (CH) units into WS₂ monolayers. We found CH-groups to be the most stable dopant to introduce carbon into WS₂, which led to a reduction of the optical bandgap from 1.98 to 1.83 eV, as revealed by photoluminescence spectroscopy. Aberration corrected high-resolution scanning transmission electron microscopy (AC-HRSTEM) observations in conjunction with first-principle calculations confirm that CH-groups incorporate into S vacancies within WS₂. According to our electronic transport measurements, undoped WS₂ exhibits a unipolar n-type conduction. Nevertheless, the CH-WS₂ monolayers show the emergence of a p-branch and gradually become entirely p-type, as the carbon doping level increases. Therefore, CH-groups embedded into the WS₂ lattice tailor its electronic and optical characteristics. This route could be used to dope other 2D-TMDs for more efficient electronic devices.

Surface functionalization-induced photoresponse characteristics of monolayer MoS2 for fast flexible photodetectors

Monolayered, semiconducting molybdenum disulfide (MoS2) is of considerable interest for its potential applications in next-generation flexible, wearable, and transparent photodetectors because it has outstanding physical properties coupled with unique atomically thin dimensions. However, there is still a lack of understanding in terms of the underlying mechanisms responsible for the photoresponse dynamics, which makes it difficult to identify the appropriate device design strategy for achieving a fast photoresponse time in MoS2 photodetectors. In this study, we investigate the importance of surface functionalization on controlling the charge carrier densities in a MoS2 monolayer and in turn the corresponding behavior of the photoresponse in relation to the position of the Fermi-level and the energy band structure. We find that the p-doping and n-doping, which is achieved through the surface functionalization of the MoS2 monolayer, leads to devices with different photoresponse behavior. Specifically, the MoS2 devices with surface functional groups contributing to p-doping exhibited a faster response time as well as higher sensitivity compared to that observed for the MoS2 devices with surface functional groups contributing to n-doping. We attribute this difference to the degree of bending in the energy bands at the metal-semiconductor junction as a result of shifting in the Fermi-level position, which influences the optoelectronic transport properties as well as the recombination dynamics leading to a low dark and thus high detectivity and fast decay time. Based upon these findings, we have also demonstrated the broad applicability of surface functionalization by fabricating a flexible MoS2 photodetector that shows an outstanding decay time of 0.7 s, which is the fastest response time observed in flexible MoS2 detectors ever reported.

Highly Sensitive Polarization Photodetection Using a Pseudo-One-Dimensional Nb(1- x)Ti xS3 Alloy

Low-symmetry layered two-dimensional (2D) materials with strong in-plane optical anisotropy can potentially be applied for polarization photodetection. This is especially true for those 2D materials with a direct band gap, which can efficiently absorb light with specific axial polarization. However, discovering such new anisotropic 2D materials with a direct band structure is still extremely challenging. Here, we fabricate a photodetector using a pseudo-one-dimensional (pseudo-1D) Nb_{(1- x)}Ti _xS₃ alloy device and demonstrate that it is highly sensitive to the polarized light because of the strong in-plane optical anisotropy and direct band gap of the alloy by combining angle-resolved polarization Raman spectroscopy, azimuth-dependent reflectance difference microscopy, polarization-dependent absorption spectroscopy, and hybrid functional theory calculations. As a consequence, the polarization photodetector of the Nb_{(1- x)}Ti _xS₃ alloy shows a large photocurrent anisotropic ratio and a high photoresponse. The choice of a low-symmetry layered pseudo-1D Nb_{(1- x)}Ti _xS₃ alloy in polarization photodetection might open up new functionalities for novel optoelectronic device applications.

Abnormal band bowing effects in phase instability crossover region of GaSe1-xTe x nanomaterials

Akin to the enormous number of discoveries made through traditional semiconductor alloys, alloying selected 2D semiconductors enables engineering of their electronic structure for a wide range of new applications. 2D alloys have been demonstrated when two components crystallized in the same phase, and their bandgaps displayed predictable monotonic variation. By stabilizing previously unobserved compositions and phases of GaSe_1−xTe_x at nanoscales on GaAs(111), we demonstrate abnormal band bowing effects and phase instability region when components crystallize in different phases. Advanced microscopy and spectroscopy measurements show as tellurium is alloyed into GaSe, nanostructures undergo hexagonal to monoclinic and isotropic to anisotropic transition. There exists an instability region (0.56 < x < 0.67) where both phases compete and coexist, and two different bandgap values can be found at the same composition leading to anomalous band bowing effects. Results highlight unique alloying effects, not existing in single-phase alloys, and phase engineering routes for potential applications in photonic and electronics.

Alloys of two-dimensional materials normally occur when two components crystallize in the same phase. Here, the authors observe an anomalous phase instability, accompanied by a band bowing effect, in GaSe_1-xTe_x alloys on GaAs(111).

Intrinsic Transport in 2D Heterostructures Mediated through h-BN Tunneling Contacts

Understanding the electronic transport of monolayer transition metal dichalcogenides (TMDs) and their heterostructures is complicated by the difficulty in achieving electrical contacts that do not perturb the material. Typically, metal deposition on monolayer TMDs leads to hybridization between the TMD and the metal, which produces Schottky barriers at the metal/semiconductor interface. In this work, we apply the recently reported hexagonal boron nitride (h-BN) tunnel contact scheme to probe the junction characteristics of a lateral TMD heterostructure grown via chemical vapor deposition. We first measure the electronic properties across the junction before elucidating optoelectronic generation mechanisms via scanning photocurrent microscopy. We find that the rectification ratio measured using the encapsulated, tunnel contact scheme is almost 2 orders of magnitude smaller than that observed via conventional metal contact geometry, which implies that the metal/semiconductor Schottky barriers play large roles in this aspect. Furthermore, we find that both the photovoltaic as well as hot carrier generation effects are dominant mechanisms driving photoresponse, depending on the external biasing conditions. This work is the first time that this encapsulation scheme has been applied to lateral heterostructures and serves as a reference for future electronic measurements on this material. It also simultaneously serves as a framework to more accurately assess the electronic transport characteristics of 2D heterostructures and better inform future device architectures.

Highly Efficient Infrared Photodetection in a Gate-Controllable Van der Waals Heterojunction with Staggered Bandgap Alignment

In recent years, various van der Waals (vdW) materials have been used in implementing high-performance photodetectors with high photoresponsivity over a wide detection range. However, in most studies reported so far, photodetection in the infrared (IR) region has not been achieved successfully. Although several vdW materials with narrow bandgaps have been proposed for IR detection, the devices based on these materials exhibit notably low photoresponsivity under IR light illumination. Here, highly efficient near-infrared (NIR) photodetection based on the interlayer optical transition phenomenon in a vdW heterojunction structure consisting of ReS₂ and ReSe₂ is demonstrated. In addition, by applying the gate-control function to the two-terminal vdW heterojunction photodetector, the photoresponsivity is enhanced to 3.64 × 10⁵ A W^-1 at λ = 980 nm and 1.58 × 10⁵ A W^-1 at λ = 1310 nm. Compared to the values reported for previous vdW photodetectors, these results are the highest levels of photoresponsivity in the NIR range. The study offers a novel device platform for achieving high-performance IR photodetectors.

Two-dimensional transition metal dichalcogenides: interface and defect engineering

This review summarizes the recent advances in understanding the effects of interface and defect engineering on the electronic and optical properties of TMDCs, as well as their applications in advanced (opto)electronic devices.

van der Waals Layered Materials: Opportunities and Challenges

Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.

Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing

Two-dimensional (2D) semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of 2D materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI₂ by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectroscopy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI₂ and study their optoelectronic properties.

Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5

The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe₅ has been shown to be a Dirac semimetal possessing unique topological, electronic, and optical properties. Here, we present spatially resolved photocurrent measurements on devices made of nanoplatelets of ZrTe₅, demonstrating the photothermoelectric origin of the photoresponse. Because of the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz^1/2, at room temperature for visible light illumination, at zero bias. We also show that these devices suffer from significant ambient reactivity, such as the formation of a Te-rich surface region driven by Zr oxidation as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.

Scalable and Transfer-Free Fabrication of MoS2/SiO2 Hybrid Nanophotonic Cavity Arrays with Quality Factors Exceeding 4000

We report the fully-scalable fabrication of a large array of hybrid molybdenum disulfide (MoS₂) - silicon dioxide (SiO₂) one-dimensional, free-standing photonic-crystal cavities capable of enhancement of the MoS₂ photoluminescence at the narrow cavity resonance. We demonstrate continuous tunability of the cavity resonance wavelength across the entire emission band of MoS₂ simply by variation of the photonic crystal periodicity. Device fabrication started by substrate-scale growth of MoS₂ using chemical vapor deposition (CVD) on non-birefringent thermal oxide on a silicon wafer; it was followed by lithographic fabrication of a photonic crystal nanocavity array on the same substrate at more than 50% yield of functional devices. Our cavities exhibit three dominant modes with measured linewidths less than 0.2 nm, corresponding to quality factors exceeding 4000. All experimental findings are found to be in excellent agreement with finite difference time domain (FDTD) simulations. CVD MoS₂ provides scalable access to a direct band gap, inorganic, stable and efficient emitter material for on-chip photonics without the need for epitaxy and is at CMOS compatible processing parameters even for back-end-of-line integration; our findings suggest feasibility of cavity based line-narrowing in MoS₂-based on-chip devices as it is required for instance for frequency-multiplexed operation in on-chip optical communication and sensing.

Two-dimensional transition metal dichalcogenide/conducting polymer composites: synthesis and applications

The exploration of hybridizing transition metal dichalcogenide (TMD) nanosheets with other materials as a unique approach for engineering their properties has attracted considerable attention from the scientific community for both basic studies and numerous potential applications. Among the various kinds of functional materials in hand, the utilization of intrinsically conducting polymers (CPs) in the construction of advanced hybrid composites with TMD nanosheets is considered as a fascinating approach. In this review, we aim at providing a survey of the literature on recent progress in composites based on 2D TMD and CPs. In this regard, we first discuss the different synthetic strategies used for the fabrication of two-dimensional transition metal dichalcogenide/conducting polymer (2D TMD/CP) composites in detail. Subsequently, we demonstrate the state-of-the-art advances in the utilization of these novel composites in promising applications such as energy storage, sensing devices, hydrogen production and so on. Finally, we also highlight some perspectives on the major challenges and future directions in this field of research.

Lead-Free Perovskite Nanowire Array Photodetectors with Drastically Improved Stability in Nanoengineering Templates

Organometal halide perovskite materials have triggered enormous attention for a wide range of high-performance optoelectronic devices. However, their stability and toxicity are major bottleneck challenges for practical applications. Substituting toxic heavy metal, that is, lead (Pb), with other environmentally benign elements, for example, tin (Sn), could be a potential solution to address the toxicity issue. Nevertheless, even worse stability of Sn-based perovskite material than Pb-based perovskite poses a great challenge for further device fabrication. In this work, for the first time, three-dimensional CH₃NH₃SnI₃ perovskite nanowire arrays were fabricated in nanoengineering templates, which can address nanowire integration and stability issues at the same time. Also, nanowire photodetectors have been fabricated and characterized. Intriguingly, it was discovered that as the nanowires are embedded in mechanically and chemically robust templates, the material decay process has been dramatically slowed down by up to 840 times, as compared with a planar thin film. This significant improvement on stability can be attributed to the effective blockage of diffusion of water and oxygen molecules within the templates. These results clearly demonstrate a new and alternative strategy to address the stability issue of perovskite materials, which is the major roadblock for high-performance optoelectronics.

Two-dimensional metal–organic frameworks with high thermoelectric efficiency through metal ion selection

The thermoelectric properties strongly depend on both the interaction between the metal ions and the ligands, and d orbital splitting of the metal ions induced by the ligands.

Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications

Liquid-phase exfoliation produces colloidal two-dimensional materials that can be assembled by dielectrophoresis to fabricate optoelectronic devices.

Synthesis of WS2xSe2-2x Alloy Nanosheets with Composition-Tunable Electronic Properties

Two-dimensional (2D) layered transition metal dichalcogenides (TMDs) have recently emerged as a new class of atomically thin semiconductors for diverse electronic, optoelectronic, and valleytronic applications. To explore the full potential of these 2D semiconductors requires a precise control of their band gap and electronic properties, which represents a significant challenge in 2D material systems. Here we demonstrate a systematic control of the electronic properties of 2D-TMDs by creating mixed alloys of the intrinsically p-type WSe2 and intrinsically n-type WS2 with variable alloy compositions. We show that a series of WS2xSe2-2x alloy nanosheets can be synthesized with fully tunable chemical compositions and optical properties. Electrical transport studies using back-gated field effect transistors demonstrate that charge carrier types and threshold voltages of the alloy nanosheet transistors can be systematically tuned by adjusting the alloy composition. A highly p-type behavior is observed in selenium-rich alloy, which gradually shifts to lightly p-type, and then switches to lightly n-type characteristics with the increasing sulfur atomic ratio, and eventually evolves into highly n-doped semiconductors in sulfur-rich alloys. The synthesis of WS2xSe2-2x nanosheets with tunable optical and electronic properties represents a critical step toward rational design of 2D electronics with tailored spectral responses and device characteristics.

High-performance photodetectors based on bandgap engineered novel layer GaSe0.5Te0.5 nanoflakes

Layered two-dimensional (2D) gallium monochalcogenide (GaX, X = S, Se, Te) semiconductor crystals hold great promise for potential electronics and photonics application.

Photocarrier dynamics in transition metal dichalcogenide alloy Mo0.5W0.5S2

We report a transient absorption study of photocarrier dynamics in transition metal dichalcogenide alloy, Mo0.5W0.5S2. Photocarriers were injected by a 400-nm pump pulse and detected by a 660-nm probe pulse. We observed a fast energy relaxation process of about 0.7 ps. The photocarrier lifetime is in the range of 50 - 100 ps, which weakly depends on the injected photocarrier density and is a few times shorter than MoS2 and WS2, reflecting the relatively lower crystalline quality of the alloy. Saturable absorption was also observed in Mo0.5W0.5S2, with a saturation energy fluence of 32 μJ cm(-2). These results provide important parameters on photocarrier properties of transition metal dichalcogenide alloys.

Recent Advances in Two-Dimensional Materials beyond Graphene

The isolation of graphene in 2004 from graphite was a defining moment for the "birth" of a field: two-dimensional (2D) materials. In recent years, there has been a rapidly increasing number of papers focusing on non-graphene layered materials, including transition-metal dichalcogenides (TMDs), because of the new properties and applications that emerge upon 2D confinement. Here, we review significant recent advances and important new developments in 2D materials "beyond graphene". We provide insight into the theoretical modeling and understanding of the van der Waals (vdW) forces that hold together the 2D layers in bulk solids, as well as their excitonic properties and growth morphologies. Additionally, we highlight recent breakthroughs in TMD synthesis and characterization and discuss the newest families of 2D materials, including monoelement 2D materials (i.e., silicene, phosphorene, etc.) and transition metal carbide- and carbon nitride-based MXenes. We then discuss the doping and functionalization of 2D materials beyond graphene that enable device applications, followed by advances in electronic, optoelectronic, and magnetic devices and theory. Finally, we provide perspectives on the future of 2D materials beyond graphene.

Recent advances in transition-metal dichalcogenide based nanomaterials for water splitting

The desire for sustainable and clean energy future continues to be the concern of the scientific community. Researchers are incessantly targeting the development of scalable and abundant electro- or photo-catalysts for water splitting. Owing to their suitable band-gap and excellent stability, an enormous amount of transition-metal dichalcogenides (TMDs) with hierarchical nanostructures have been extensively explored. Herein, we present an overview of the recent research progresses in the design, characterization and applications of the TMD-based electro- or photo-catalysts for hydrogen and oxygen evolution. Emphasis is given to the layered and pyrite-phase structured TMDs encompassing semiconducting and metallic nanomaterials. Illustrative results and the future prospects are pointed out. This review will provide the readers with insight into the state-of-the-art research progresses in TMD based nanomaterials for water splitting.

Simultaneous Thermoelectric and Optoelectronic Characterization of Individual Nanowires

Semiconducting nanowires have been explored for a number of applications in optoelectronics such as photodetectors and solar cells. Currently, there is ample interest in identifying the mechanisms that lead to photoresponse in nanowires in order to improve and optimize performance. However, distinguishing among the different mechanisms, including photovoltaic, photothermoelectric, photoemission, bolometric, and photoconductive, is often difficult using purely optoelectronic measurements. In this work, we present an approach for performing combined and simultaneous thermoelectric and optoelectronic measurements on the same individual nanowire. We apply the approach to GaN/AlGaN core/shell and GaN/AlGaN/GaN core/shell/shell nanowires and demonstrate the photothermoelectric nature of the photocurrent observed at the electrical contacts at zero bias, for above- and below-bandgap illumination. Furthermore, the approach allows for the experimental determination of the temperature rise due to laser illumination, which is often obtained indirectly through modeling. We also show that under bias, both above- and below-bandgap illumination leads to a photoresponse in the channel with signatures of persistent photoconductivity due to photogating. Finally, we reveal the concomitant presence of photothermoelectric and photogating phenomena at the contacts in scanning photocurrent microscopy under bias by using their different temporal response. Our approach is applicable to a broad range of nanomaterials to elucidate their fundamental optoelectronic and thermoelectric properties.

Ternary SnS(2-x)Se(x) Alloys Nanosheets and Nanosheet Assemblies with Tunable Chemical Compositions and Band Gaps for Photodetector Applications

Ternary metal dichalcogenides alloys exhibit compositionally tunable optical properties and electronic structure, and therefore, band gap engineering by controllable doping would provide a powerful approach to promote their physical and chemical properties. Herein we obtained ternary SnS_2−xSe_x alloys with tunable chemical compositions and optical properties via a simple one-step solvothermal process. Raman scattering and UV-vis-NIR absorption spectra reveal the composition-related optical features, and the band gaps can be discretely modulated from 2.23 to 1.29 eV with the increase of Se content. The variation tendency of band gap was also confirmed by first-principles calculations. The change of composition results in the difference of crystal structure as well as morphology for SnS_2−xSe_x solid solution, namely, nanosheets assemblies or nanosheet. The photoelectrochemical measurements indicate that the performance of ternary SnS_2−xSe_x alloys depends on their band structures and morphology characteristics. Furthermore, SnS_2−xSe_x photodetectors present high photoresponsivity with a maximum of 35 mA W⁻¹ and good light stability in a wide range of spectral response from ultraviolet to visible light, which renders them promising candidates for a variety of optoelectronic applications.