Observing Oxygen Vacancy Driven Electroforming in Pt-TiO2-Pt Device via Strong Metal Support Interaction

Construction of Oxygen Vacancy-Rich TiO2 Nanocrystals for Boosting the Ammonolysis of Caprolactam to 6-Aminocapronitrile

Hexamethylene diamine, an important chemical intermediate for polyamides, can be synthesized through the two-step route of caprolactam (CPL) ammonolysis to 6-aminocapronitrile (ACN), followed by hydrogenation. This method has received increasing attention from academia and industry. However, studies on the catalyst structure-performance correlation in CPL ammonolysis are still sporadic. In this work, a series of anatase TiO2 with different oxygen vacancy concentrations was prepared by chemical reduction using NaBH4. The oxygen vacancy on TiO2 surface, presented as Ti3+ sites, substantially enhances the adsorption and activation of NH3, which are demonstrated as the key steps in ammonolysis. Owing to the synergistic effect of Ti3+ and Ti4+ species, the CPL conversion rate and ACN selectivity of 85 and 97%, respectively, are achieved within 250 h. Density functional theory calculations showed that the intermediates on oxygen vacancy-rich TiO2 had a more favorable adsorption energy compared to those on intact TiO2, which is in good agreement with the experimental results.

Controllable modulation of the oxygen vacancy-induced adjustment of memristive behavior for direct differential operation with transistor-free memristor

To achieve the goal of neuromorphic computing hardware implementation with extremely high efficiency, low power consumption, and high density, it is necessary to develop transistor-free memristors and implement differential operation without subtraction circuits. In this study, argon ion irradiation was used during the fabrication process of a single crystalline LiNbO3 (LN) thin film to controllably introduce oxygen vacancies (OVs) into the bottom surface, which realized the modulation of OVs based on the excellent environment provided by a single-crystalline thin film. The memristive behavior of memristors was then modulated by regulating the distribution of OVs, and the effect of OVs distributed near the bottom surface of the single crystalline LN thin film on the memristive behavior was analyzed. In this way, two transistor-free memristors with opposite memristive behavior directions were fabricated. Two transistor-free memristors exhibit excellent synaptic plasticity and reliable multilevel resistance states. Based on two transistor-free memristors, a novel differential pair was constructed. Hardware implementations of direct differential operation without subtraction circuits were achieved. This study provides a new pathway to develop a transistor-free memristor and achieve differential operation without subtraction circuits in neuromorphic computing, which will simplify the peripheral circuits, improve integration density, and reduce power consumption and latency.

Characteristics of Synaptic Function of Mesoporous Silica-Titania and Mesoporous Titania Lateral Electrode Devices

In this paper, we have fabricated non-volatile memory resistive switching (RS) devices and analyzed analog memristive characteristics using lateral electrodes with mesoporous silica-titania (meso-ST) and mesoporous titania (meso-T) layers. For the planar-type device having two parallel electrodes, current-voltage (I-V) curves and pulse-driven current changes could reveal successful long-term potentiation (LTP) along with long-term depression (LTD), respectively, by the RS active mesoporous two layers for 20~100 μm length. Through mechanism characterization using chemical analysis, non-filamental memristive behavior unlike the conventional metal electroforming was identified. Additionally, high performance of the synaptic operations could be also accomplished such that a high current of 10^-6 Amp level could occur despite a wide electrode spacing and short pulse spike biases under ambient condition with moderate humidity (RH 30~50%). Moreover, it was confirmed that rectifying characteristics were observed during the I-V measurement, which was a representative feature of dual functionality of selection diode and the analog RS device for both meso-ST and meso-T devices. The memristive and synaptic functions along with the rectification property could facilitate a chance of potential implementation of the meso-ST and meso-T devices to neuromorphic electronics platform.

Metal Oxide-Supported Metal Catalysts for Electrocatalytic Oxygen Reduction Reaction: Characterization Methods, Modulation Strategies, and Recent Progress

The sluggish kinetics of the oxygen reduction reaction (ORR) with complex multielectron transfer steps significantly limits the large-scale application of electrochemical energy devices, including metal-air batteries and fuel cells. Recent years witnessed the development of metal oxide-supported metal catalysts (MOSMCs), covering single atoms, clusters, and nanoparticles. As alternatives to conventional carbon-dispersed metal catalysts, MOSMCs are gaining increasing interest due to their unique electronic configuration and potentially high corrosion resistance. By engineering the metal oxide substrate, supported metal, and their interactions, MOSMCs can be facilely modulated. Significant progress has been made in advancing MOSMCs for ORR, and their further development warrants advanced characterization methods to better understand MOSMCs and precise modulation strategies to boost their functionalities. In this regard, a comprehensive review of MOSMCs for ORR is still lacking despite this fast-developing field. To eliminate this gap, advanced characterization methods are introduced for clarifying MOSMCs experimentally and theoretically, discuss critical methods of boosting their intrinsic activities and number of active sites, and systematically overview the status of MOSMCs based on different metal oxide substrates for ORR. By conveying methods, research status, critical challenges, and perspectives, this review will rationally promote the design of MOSMCs for electrochemical energy devices.

High-temperature operation of gallium oxide memristors up to 600 K

Memristors have attracted much attention for application in neuromorphic devices and brain-inspired computing hardware. Their performance at high temperatures is required to be sufficiently reliable in neuromorphic computing, potential application to power electronics, and the aerospace industry. This work focuses on reduced gallium oxide (GaO_x) as a wide bandgap memristive material that is reported to exhibit highly reliable resistive switching operation. We prepared amorphous GaO_x films to fabricate Pt/GaO_x/indium tin oxide memristors using pulsed laser deposition. Stable resistive switching phenomena were observed in current-voltage properties measured between 300 and 600 K. The conduction mechanism analysis revealed that the resistive switching is caused by the transition between ohmic and space charge limiting current conductions. We elucidated the importance of appropriate control of the density of oxygen vacancies to obtain a high on/off resistance ratio and distinct resistive switching at high temperatures. These results indicate that GaO_x is a promising memristor material that can be stably operated even at the record-high temperature of 600 K.

Frequency-Dependent Synapse Weight Tuning in 1S1R with a Short-Term Plasticity TiOx-Based Exponential Selector

Short-term plasticity (STP) is an important synaptic characteristic in the hardware implementation of artificial neural networks (ANN), as it enables the temporal information processing (TIP) capability. However, the STP feature is rather challenging to reproduce from a single nonvolatile resistive random-access memory (RRAM) element, as it requires a certain degree of volatility. In this work, a Pt/TiO_x/Pt exponential selector is introduced not only to suppress the sneak current but also to enable the TIP feature in a one selector-one RRAM (1S1R) synaptic device. Our measurements reveal that the exponential selector exhibits the STP characteristic, while a Pt/HfO_x/Ti RRAM enables the long-term memory capability of the synapse. Thereafter, we experimentally demonstrated pulse frequency-dependent multilevel switching in the 1S1R device, exhibiting the TIP capability of the developed 1S1R synapse. The observed STP of the selector is strongly influenced by the bottom metal-oxide interface, in which Ar plasma treatment on the bottom Pt electrode resulted in the annihilation of the STP feature in the selector. A mechanism is thus proposed to explain the observed STP, using the local electric field enhancement induced at the metal-oxide interface coupled with the drift-diffusion model of mobile O^2- and Ti³⁺ ions. This work therefore provides a reliable means of producing the STP feature in a 1S1R device, which demonstrates the TIP capability sought after in hardware-based ANN.

Electrically and Optically Controllable p-n Junction Memtransistor Based on an Al2 O3 Encapsulated 2D Te/ReS2 van der Waals Heterostructure

The exploration of memtransistors as a combination of a memristor and a transistor has recently attracted intensive attention because it offers a promising candidate for next-generation multilevel nonvolatile memories and synaptic devices. However, the present state-of-the-art memtransistors, which are based on a single material, such as MoS₂ or perovskite, exhibit a relatively low switching ratio, require extremely high electric fields to modulate bistable resistance states and do not perform multifunctional operations. Here, the realization of an electrically and optically controllable p-n junction memtransistor using an Al₂ O₃ encapsulated 2D Te/ReS₂ van der Waals heterostructure is reported. The hybrid memtransistor shows a reversible bipolar resistance switching behavior between a low resistance state and a high resistance state with a high switching ratio up to 10⁶ at a low operating voltage (<10 V), high cycling endurance, and long retention time. Moreover, multiple resistance states are achieved by applying different bias voltages, gate voltages, or light powers. In addition, logical operations, including the inverter and AND/OR gates, and synaptic activities are performed by controlling the optical and electrical inputs. The work offers a novel strategy for the reliable fabrication of p-n junction memtransistors for multifunctional devices and neuromorphic applications.

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

Transparent photovoltaic memory for neuromorphic device

Bio-inspired electronic devices have significant potential for use in memory devices of the future, including in the context of neuromorphic computing and architecture. This study proposes a transparent heterojunction device for the artificial human visual cortex. Owing to their high transparency, such devices directly react to incoming light to mimic neurological and biological processes in the nervous system. Metal-oxide materials are applied to form a transparent heterojunction (n-type ZnO/p-type NiO) in the proposed device that also provides the photovoltaic function to realize the optic nerve system. The device also exhibits nociceptive features. Its transparent photovoltaic feature endows it with self-powered operation that ensures long-term reliability without needing to replace the power system. This self-powered and highly transparent visual electronic device can provide a route for sustainable applications of neuromorphic computing, including artificial eyes.

Impact of the Atomic Layer-Deposited Ru Electrode Surface Morphology on Resistive Switching Properties of TaOx-Based Memory Structures

Resistive switching (RS) device behavior is highly dependent on both insulator and electrode material properties. In particular, the bottom electrode (BE) surface morphology can strongly affect RS characteristics. In this work, Ru films with different thicknesses grown on a TiN layer by radical-enhanced atomic layer deposition (REALD) are used as an inert BE in TaO_x-based RS structures. The REALD Ru surface roughness is found to increase by more than 1 order of magnitude with the increase in the reaction cycle number. Simultaneously, a wide range of RS parameters, such as switching voltage, resistance both in low and high resistance states, endurance, and so forth, monotonically change. A simplified model is proposed to explain the linkage between RS properties and roughness of the Ru surface. The field distribution was simulated based on the observed surface morphologies, and the resulting conducting filament formation was anticipated based on the local field enhancement. Conductive atomic force microscopy confirmed the theoretical expectations.

Memristive TiO2: Synthesis, Technologies, and Applications

Titanium dioxide (TiO2) is one of the most widely used materials in resistive switching applications, including random-access memory, neuromorphic computing, biohybrid interfaces, and sensors. Most of these applications are still at an early stage of development and have technological challenges and a lack of fundamental comprehension. Furthermore, the functional memristive properties of TiO2 thin films are heavily dependent on their processing methods, including the synthesis, fabrication, and post-fabrication treatment. Here, we outline and summarize the key milestone achievements, recent advances, and challenges related to the synthesis, technology, and applications of memristive TiO2. Following a brief introduction, we provide an overview of the major areas of application of TiO2-based memristive devices and discuss their synthesis, fabrication, and post-fabrication processing, as well as their functional properties.

In Situ TEM Study of the Amorphous-to-Crystalline Transition during Dielectric Breakdown in TiO2 Film

Dielectric breakdown of oxides is a main limiting factor for improvement of the performance of electronic devices. Present understanding suggests that defects produced by intense voltage accumulate in the oxide to form a percolation path connecting the two electrodes and trigger the dielectric breakdown. However, reports on directly visualizing the process at nanoscale are very limited. Here, we apply in situ transmission electron microscopy to characterize the structural and compositional changes of amorphous TiO₂ under extreme electric field (∼100 kV/mm) in a Si/TiO₂/W system. Upon applying voltage pulses, the amorphous TiO₂ gradually transformed into crystalline substoichiometric rutile TiO_2-x and the Magnéli phase Ti₃O₅. The transitions started from the anode/oxide interface under both field polarities. Preferred growth orientation of rutile TiO_2-x with respect to the Si substrate was observed when Si was the anode, while oxidation and melting of the W probe occurred when W was the anode. We associate the TiO₂ crystallization process with the electrochemical reduction of TiO₂, polarity-dependent oxygen migration, and Joule heating. The experimental results are supported by our phase-field modeling. These findings provide direct details of the defect formation process during dielectric breakdown in amorphous oxides and will help the design of electronic devices with higher efficiency and reliability.

Analog Memristive Characteristics of Mesoporous Silica-Titania Nanocomposite Device Concurrent with Selection Diode Property

A threshold resistive switching (RS) device concurrently demonstrating analog memristive property with mesoporous silica-titania (m-ST) nanocomposites is introduced in this study. The nanostructured m-ST layer in an Al/m-ST/Pt device was constructed by facile soft templating of evaporation-induced self-assembly (EISA) method to demonstrate nonlinear threshold RS behaviors accompanying with discrete synaptic characteristics along with adaptive motions. The EISA layer was composed of well-ordered mesopores (∼10 nm), where paths of electrical currents could be controllably guided and sequentially activated by repeated voltage sweeps. The combinational memristive behavior accompanying the shift of threshold voltage (V_th) could implicate concurrent performances of threshold RS and selection diode devices. In addition, synaptic functionalities of long-term potentiation and depression were characterized by variations of pulse timing width (7-100 ms). Physical and chemical features of the m-ST were analyzed with Fourier-transform infrared spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, high-resolution transmission electron microscopy, and optical microscopy to investigate the unique origin of dual operation modes of the device. The m-ST synaptic device could have potential for further development of a hybrid selection diode having both a low sneaky current loss and memristive characteristics accomplishing low level of cross-talk between RS devices.

Understanding memristive switching via in situ characterization and device modeling

Owing to their attractive application potentials in both non-volatile memory and unconventional computing, memristive devices have drawn substantial research attention in the last decade. However, major roadblocks still remain in device performance, especially concerning relatively large parameter variability and limited cycling endurance. The response of the active region in the device within and between switching cycles plays the dominating role, yet the microscopic details remain elusive. This Review summarizes recent progress in scientific understanding of the physical origins of the non-idealities and propose a synergistic approach based on in situ characterization and device modeling to investigate switching mechanism. At last, the Review offers an outlook for commercialization viability of memristive technology.

Memristor as the fourth basic element of electric circuits has drawn substantial attention for developing future computing technologies. Sun et al. report the progress and the challenges facing researchers on understanding memristive switching, and advocate continuous studies using a synergistic approach.

Confining vertical conducting filament for reliable resistive switching by using a Au-probe tip as the top electrode for epitaxial brownmillerite oxide memristive device

We had discovered novel resistance switching phenomena in SrCoOx epitaxial thin films. We have interpreted the results in terms of the topotactic phase transformation between their insulating brownmillerite phase and the conducting perovskite phase and the existence of a rather vertical conducting filament due to its inherent layered structure. However, the rough interface observed between the SrCoOx and the Au top electrode (area ~10000 μm2) was assumed to result in the observed fluctuation in key switching parameters. In order to verify the effect of rough interface on the switching performance in the SrCoOx device, in this work, we studied the resistive switching properties of a SrCoOx device by placing a Au-coated tip (end area ~0.5 μm2) directly on the film surface as the top electrode. The resulting device displayed much improved endurance and showed high uniformity in key switching parameters as compared to the device having a large top electrode area. A simulation result confirmed that the Au-coated tip provides a local confinement of the electrical field, resulting in confinement of oxygen ion distribution and therefore localization of the conducting filament. By minimizing other free and uncontrollable parameters, the designed experiment here provides the most direct and isolated evidence that the rough interface between electrode and ReRAM matrix is detrimental for the reproducibility of resistivity switching phenomena.

Nonpolar Resistive Switching in Ag@TiO2 Core-Shell Nanowires

Nonpolar resistive switching (RS), a combination of bipolar and unipolar RS, is demonstrated for the first time in a single nanowire (NW) system. Exploiting Ag@TiO₂ core-shell (CS) NWs synthesized by postgrowth shell formation, the switching mode is controlled by adjusting the current compliance effectively, tailoring the electrical polarity response. We demonstrate ON/OFF ratios of 10⁵ and 10⁷ for bipolar and unipolar modes, respectively. In the bipolar regime, retention times could be controlled up to 10³ s, and in the unipolar mode, >10⁶ s was recorded. We show how the unique dual-mode switching behavior is enabled by the defect-rich polycrystalline material structure of the TiO₂ shell and the interaction between the Ag core and the Ag electrodes. These results provide a foundation for engineering nonpolar RS behaviors for memory storage and neuromorphic applications in CSNW structures.

Developing an in situ environmental TEM set up for investigations of resistive switching mechanisms in Pt-Pr1-xCaxMnO3-δ-Pt sandwich structures

Non-volatile resistance change under electric stimulation in many metal-oxides is a promising path to next generation memory devices. However, the underlying mechanisms are still not fully understood. In situ transmission electron microscopy experiments provide a powerful tool to elucidate these mechanisms. In this contribution, we demonstrate a TEM lamella geometry for in situ biasing with two fixed electrode contacts ensuring low and stable contact resistances. We use Pr_1-xCa_xMnO_3-δ sandwiched by Pt electrodes as model system. The evolution of manganese valence state during electric stimulation in different environments is mapped by means of electron energy loss spectroscopy with high spatial resolution in STEM. Correlation of Mn valence with local oxygen content is found. In addition to electrically driven switching, beam-induced redox reactions in oxygen environment are observed. This effect might be restricted to thin lamellae. In general, our results support that bulk oxygen electromigration is the relevant mechanism for non-volatile resistive switching in PCMO.

Atomic-resolution imaging of electrically induced oxygen vacancy migration and phase transformation in SrCoO2.5-σ

Oxygen ion transport is the key issue in redox processes. Visualizing the process of oxygen ion migration with atomic resolution is highly desirable for designing novel devices such as oxidation catalysts, oxygen permeation membranes, and solid oxide fuel cells. Here we show the process of electrically induced oxygen migration and subsequent reconstructive structural transformation in a SrCoO_2.5−σ film by scanning transmission electron microscopy. We find that the extraction of oxygen from every second SrO layer occurs gradually under an electrical bias; beyond a critical voltage, the brownmillerite units collapse abruptly and evolve into a periodic nano-twined phase with a high c/a ratio and distorted tetrahedra. Our results show that oxygen vacancy rows are not only natural oxygen diffusion channels, but also preferred sites for the induced oxygen vacancies. These direct experimental results of oxygen migration may provide a common mechanism for the electrically induced structural evolution of oxides.

Information on how oxygen ions transport is crucial to understanding field-induced phase transformations in materials. Here, Zhang et al. directly image atomic-scale oxygen migration and the subsequent structural reconstruction in a SrCoO_2.5-σ film in the presence of an electric field.

Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts

Resistance switching in TiO₂ and many other transition metal oxide resistive random access memory materials is believed to involve the assembly and breaking of interacting oxygen vacancy filaments via the combined effects of field-driven ion migration and local electronic conduction leading to Joule heating. These complex processes are very difficult to study directly in part because the filaments form between metallic electrode layers that block their observation by most characterization techniques. By replacing the top electrode layer in a metal-insulator-metal memory structure with easily removable liquid electrolytes, either an ionic liquid (IL) with high resistance contact or a conductive aqueous electrolyte, we probe field-driven oxygen vacancy redistribution in TiO₂ thin films under conditions that either suppress or promote Joule heating. Oxygen isotope exchange experiments indicate that exchange of oxygen ions between TiO₂ and the IL is facile at room temperature. Oxygen loss significantly increases the conductivity of the TiO₂ films; however, filament formation is not observed after IL gating alone. Replacing the IL with a more conductive aqueous electrolyte contact and biasing does produce electroformed conductive filaments, consistent with a requirement for Joule heating to enhance the vacancy concentration and mobility at specific locations in the film.

Oxygen Vacancies Control Transition of Resistive Switching Mode in Single-Crystal TiO2 Memory Device

Epitaxial TiO₂ thin films were grown by radio-frequency magnetron sputtering on conductive Nb-SrTiO₃ substrates. X-ray photoelectron spectroscopy reveals that the oxygen vacancies inside the TiO₂ films can be dramatically reduced by postannealing treatment under an oxygen atmosphere. The decreasing concentration of oxygen vacancies modifies the resistive switching (RS) mechanism from a valence change mode to a electrochemical metallization mode, resulting in a high switching ratio (≥10⁵), a small electronic leakage current in the high-resistance (≥10⁹ Ω) state, and a highly controlled quantized conductance (QC) in the low-resistance state. These results allow for understanding the relationship between different RS mechanisms as well as the QC for multilevel data storage application.

Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2 Layer

Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO₂/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results.

Interfacial memristors in Al–LaNiO3heterostructures

Self-assembled interfacial memristive systems in Al–LaNiO₃heterostructures.

Schottky barrier and band edge engineering via the interfacial structure and strain for the Pt/TiO2 heterostructure

The Schottky barrier of the Pt/TiO₂ interface depends strongly on both the interfacial stain and structure.

Density functional theory study on the metal–support interaction between a Au9 cluster and an anatase TiO2(001) surface

The microstructure and electronic structure of three different Au₉ isomers loaded on anatase TiO₂(001) surface were studied. The adsorption energy of Au₉ 2D configuration is larger than that of 3D configuration, owing to the stronger interactions with more adsorption sites.

Highly active and stable Au@CuxO core–shell nanoparticles supported on alumina for carbon monoxide oxidation at low temperature

Au@CuxO core–shell nanoparticles and Au@CuxO/Al₂O₃used for CO oxidation at low temperature are prepared. CO conversion on Au@CuxO/Al₂O₃can reach to 38% at room temperature and the catalytic activity remains unchanged after 108 hours reaction.