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Zhou P, Gu J, Fan L, Ma J, Lian H, Shi W, Wei B. All-printed organic photodetectors with metal electrodes enabled by one-step solvent-mediated transfer printing technology. NANOSCALE 2024; 16:10682-10689. [PMID: 38687297 DOI: 10.1039/d3nr06516b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
A one-step solvent-mediated transfer printing technology (sTPT) is proposed to fabricate printable silver (Ag) electrodes. This simple approach can realize the residuals in the active layer serving as the mediator due to the capillary action without the use of any additional solvent. The as-cast polydimethylsiloxane (PDMS) was used as the stamp in the fabrication process. The residual solvent and the as-cast PDMS stamps simplified the fabrication process, while the transfer-printed Ag electrodes presented favorable conductivity and improved hydrophobicity due to the presence of residual PDMS on the surface of Ag, indicating the superiority as the top electrode for organic photodetectors (OPDs). Compared to the devices with the top Ag electrodes fabricated by the conventional evaporation method, we demonstrated that the OPDs with transfer-printed Ag electrodes presented better performance than that of the reference devices, including suppressed dark current, enlarged linear dynamic range, shortened response time, and optimized durability. These improved performances can be attributed to the fewer traps at the interface between the active layer and Ag electrodes. The sTPT may be a promising method for the fabrication of OPDs owing to the simplified fabrication process and enhanced device performance.
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Affiliation(s)
- Pengchao Zhou
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
| | - Jialu Gu
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Lei Fan
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
| | - Jipeng Ma
- Affiliated Hospital of Jining Medical University, Jining, Shandong 273500, P. R. China
| | - Hong Lian
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Wei Shi
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
| | - Bin Wei
- School of Mechatronic Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China.
- Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, P. R. China
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2
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Huang YC, Wang TY, Huang ZH, Santiago SRMS. Advancing Detectivity and Stability of Near-Infrared Organic Photodetectors via a Facile and Efficient Cathode Interlayer. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27576-27586. [PMID: 38722948 DOI: 10.1021/acsami.4c01466] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/30/2024]
Abstract
Near-infrared (NIR) organic photodetectors (OPDs) are pivotal in numerous technological applications due to their excellent responsivity within the NIR region. Polyethylenimine ethoxylated (PEIE) has conventionally been employed as an electron transport layer (hole-blocking layer) to suppress dark current (JD) and enhance charge transport. However, the limitations of PEIE in chemical stability, processing conditions, environmental impact, and absorption range have spurred the development of alternative materials. In this study, we introduced a novel solution: a hybrid of sol-gel zinc oxide (ZnO) and N,N'-bis(N,N-dimethylpropan-1-amine oxide)perylene-3,4,9,10-tetracarboxylic diimide (PDINO) as the electron transport layer for NIR-OPDs. Our fabricated OPD exhibited significantly improved responsivity, reduced internal traps, and enhanced charge transfer efficiency. The detectivity, spanning from 400 to 1100 nm, surpassed ∼5 × 1012 Jones, reaching ∼1.1 × 1012 Jones at 1000 nm, accompanied by an increased responsivity of 0.47 A/W. Also, the unpackaged OPD remarkedly demonstrated stable JD and external quantum efficiency (EQE) over 1000 h under dark storage conditions. This innovative approach not only addresses the drawbacks of conventional PEIE-based OPDs but also offers promising avenues for the development of high-performance OPDs in the future.
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Affiliation(s)
- Yu-Ching Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Organic Electronics Research Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Biochemical Technology R&D Center, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan
| | - Tai-Yuan Wang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
| | - Zhi-Hao Huang
- Department of Materials Engineering, Ming Chi University of Technology, New Taipei City 24301, Taiwan
- Department of Chemical and Materials Engineering, Chang Gung University, Taoyuan 33302, Taiwan
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3
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Du Z, Luong HM, Sabury S, Jones AL, Zhu Z, Panoy P, Chae S, Yi A, Kim HJ, Xiao S, Brus VV, Manjunatha Reddy GN, Reynolds JR, Nguyen TQ. High-Performance Wearable Organic Photodetectors by Molecular Design and Green Solvent Processing for Pulse Oximetry and Photoplethysmography. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2310478. [PMID: 38054854 DOI: 10.1002/adma.202310478] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/09/2023] [Revised: 11/27/2023] [Indexed: 12/07/2023]
Abstract
White-light detection from the visible to the near-infrared region is central to many applications such as high-speed cameras, autonomous vehicles, and wearable electronics. While organic photodetectors (OPDs) are being developed for such applications, several challenges must be overcome to produce scalable high-detectivity OPDs. This includes issues associated with low responsivity, narrow absorption range, and environmentally friendly device fabrication. Here, an OPD system processed from 2-methyltetrahydrofuran (2-MeTHF) sets a record in light detectivity, which is also comparable with commercially available silicon-based photodiodes is reported. The newly designed OPD is employed in wearable devices to monitor heart rate and blood oxygen saturation using a flexible OPD-based finger pulse oximeter. In achieving this, a framework for a detailed understanding of the structure-processing-property relationship in these OPDs is also developed. The bulk heterojunction (BHJ) thin films processed from 2-MeTHF are characterized at different length scales with advanced techniques. The BHJ morphology exhibits optimal intermixing and phase separation of donor and acceptor moieties, which facilitates the charge generation and collection process. Benefitting from high charge carrier mobilities and a low shunt leakage current, the newly developed OPD exhibits a specific detectivity of above 1012 Jones over 400-900 nm, which is higher than those of reference devices processed from chlorobenzene and ortho-xylene.
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Affiliation(s)
- Zhifang Du
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Hoang Mai Luong
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Sina Sabury
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Austin L Jones
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Ziyue Zhu
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Patchareepond Panoy
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Sangmin Chae
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
| | - Ahra Yi
- Department of Organic Materials Science and Engineering, School of Chemical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Hyo Jung Kim
- Department of Organic Materials Science and Engineering, School of Chemical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Steven Xiao
- 1-Material Inc, 2290 Chemin St-Francois, Dorval, Quebec, H9P 1K2, Canada
| | - Viktor V Brus
- Department of Physics, School of Sciences and Humanities, Nazarbayev University, Nur-Sultan City, 010000, Republic of Kazakhstan
| | - G N Manjunatha Reddy
- University of Lille, CNRS, Centrale Lille Institut, Univ. Artois, UMR 8181, Unité de Catalyse et Chimie du Solide, Lille, F-59000, France
| | - John R Reynolds
- School of Chemistry and Biochemistry, School of Materials Science and Engineering, Center for Organic Photonics and Electronics, Georgia Tech Polymer Network, Georgia Institute of Technology, Atlanta, GA, 30332, USA
| | - Thuc-Quyen Nguyen
- Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, 93106, USA
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4
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Kang M, Lee DH, Kim J, Nam G, Baek S, Heo S, Noh Y, Chung DS. Boosting the Performance of Photomultiplication-Type Organic Photodiodes by Embedding CsPbBr 3 Perovskite Nanocrystals. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305349. [PMID: 38064157 PMCID: PMC10870029 DOI: 10.1002/advs.202305349] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2023] [Revised: 11/17/2023] [Indexed: 02/17/2024]
Abstract
In this study, it is demonstrated that CsPbBr3 perovskite nanocrystals (NCs) can enhance the overall performances of photomultiplication-type organic photodiodes (PM-OPDs). The proposed approach enables the ionic-polarizable CsPbBr3 NCs to be evenly distributed throughout the depletion region of Schottky junction interface, allowing the entire trapped electrons within the depletion region to be stabilized, in contrast to previously reported interface-limited strategies. The optimized CsPbBr3 -NC-embedded poly(3-hexylthiophene-diyl)-based PM-OPDs exhibit exceptionally high external quantum efficiency, specific detectivity, and gain-bandwidth product of 2,840,000%, 3.97 × 1015 Jones, and 2.14 × 107 Hz, respectively. 2D grazing-incidence X-ray diffraction analyses and drift-diffusion simulations combined with temperature-dependent J-V characteristic analyses are conducted to investigate the physics behind the success of CsPbBr3 -NC-embedded PM-OPDs. The results show that the electrostatic interactions generated by the ionic polarization of NCs effectively stabilize the trapped electrons throughout the entire volume of the photoactive layer, thereby successfully increasing the effective energy depth of the trap states and allowing efficient PM mechanisms. This study demonstrates how a hybrid-photoactive-layer approach can further enhance PM-OPD when the functionality of inorganic inclusions meets the requirements of the target device.
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Affiliation(s)
- Mingyun Kang
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dong Hyeon Lee
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Juhee Kim
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Geon‐Hee Nam
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seyeon Baek
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Seongmin Heo
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
| | - Dae Sung Chung
- Department of Chemical EngineeringPohang University of Science and Technology (POSTECH)Pohang37673Republic of Korea
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5
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Zhang Q, Jiang Q, Fan F, Liu G, Chen Y, Zhang B. MoS 2 Quantum Dot-Optimized Conductive Channels for a Conjugated Polymer-Based Synaptic Memristor. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59630-59642. [PMID: 38103041 DOI: 10.1021/acsami.3c12674] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/17/2023]
Abstract
Donor-acceptor-type conjugated polymers are widely used in memristors due to their unique push-pull electron structures and charge transfer mechanisms. However, the inherently inhomogeneous microstructure of polymer films and their low crystallinity produce randomness that destabilizes formed conductive channels, giving polymer-based memristors unstable switching behavior. In this contribution, we prepared a synaptic device based on PM6-MoS2 QD (molybdenum disulfide quantum dot) nanocomposites. In the composites, MoS2 QDs provided the active centers for forming conductive channels via electron trapping and detrapping. They also controlled the directional formation of conductive channels between PM6 and MoS2 QDs, reducing randomness and giving devices a narrow switching voltage range and cycling longevity. The device exhibited continuous multistage conductance states under a direct current voltage sweep and simulated a variety of synaptic functions, including long-term potentiation, long-term depression, short-term potentiation, short-term depression, paired-pulse facilitation, spiking-rate-dependent plasticity, and "learning experience" behavior. The memristor could also perform arithmetic, including "counting" and "subtraction" operations. This work provides a new approach to improving the performance of memristors for neuromorphic computing.
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Affiliation(s)
- Qiongshan Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Qizhi Jiang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Fei Fan
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
- Shanghai i-Reader Biotech Co., Ltd., Shanghai 201114, China
| | - Gang Liu
- School of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yu Chen
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
| | - Bin Zhang
- Key Laboratory for Advanced Materials and Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, School of Chemistry and Molecular Engineering, East China University of Science and Technology, Shanghai 200237, China
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6
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Lou Z, Tao J, Wei B, Jiang X, Cheng S, Wang Z, Qin C, Liang R, Guo H, Zhu L, Müller‐Buschbaum P, Cheng H, Xu X. Near-Infrared Organic Photodetectors toward Skin-Integrated Photoplethysmography-Electrocardiography Multimodal Sensing System. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2304174. [PMID: 37991135 PMCID: PMC10754100 DOI: 10.1002/advs.202304174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/23/2023] [Revised: 10/05/2023] [Indexed: 11/23/2023]
Abstract
In the fast-evolving landscape of decentralized and personalized healthcare, the need for multimodal biosensing systems that integrate seamlessly with the human body is growing rapidly. This presents a significant challenge in devising ultraflexible configurations that can accommodate multiple sensors and designing high-performance sensing components that remain stable over long periods. To overcome these challenges, ultraflexible organic photodetectors (OPDs) that exhibit exceptional performance under near-infrared illumination while maintaining long-term stability are developed. These ultraflexible OPDs demonstrate a photoresponsivity of 0.53 A W-1 under 940 nm, shot-noise-limited specific detectivity of 3.4 × 1013 Jones, and cut-off response frequency beyond 1 MHz at -3 dB. As a result, the flexible photoplethysmography sensor boasts a high signal-to-noise ratio and stable peak-to-peak amplitude under hypoxic and hypoperfusion conditions, outperforming commercial finger pulse oximeters. This ensures precise extraction of blood oxygen saturation in dynamic working conditions. Ultraflexible OPDs are further integrated with conductive polymer electrodes on an ultrathin hydrogel substrate, allowing for direct interface with soft and dynamic skin. This skin-integrated sensing platform provides accurate measurement of photoelectric and biopotential signals in a time-synchronized manner, reproducing the functionality of conventional technologies without their inherent limitations.
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Affiliation(s)
- Zirui Lou
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
- School of Advanced MaterialsPeking University Shenzhen Graduate SchoolShenzhen518055China
| | - Jun Tao
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Binbin Wei
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Xinyu Jiang
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
| | - Simin Cheng
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Zehao Wang
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Chao Qin
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Rong Liang
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Haotian Guo
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
| | - Liping Zhu
- State Key Laboratory of Silicon and Advanced Semiconductor MaterialsSchool of Materials Science and EngineeringZhejiang UniversityHangzhou310027China
| | - Peter Müller‐Buschbaum
- Lehrstuhl für Funktionelle MaterialienPhysik DepartmentTechnische Universität MünchenJames‐Franck‐Str. 185748GarchingGermany
- Heinz Maier‐Leibnitz‐Zentrum (MLZ)Technische Universität MünchenLichtenbergstr. 185748GarchingGermany
| | - Hui‐Ming Cheng
- Institute of Technology for Carbon Neutrality & Faculty of Materials Science and Energy EngineeringShenzhen Institute of Advanced TechnologyChinese Academy of SciencesShenzhen518055China
- Shenyang National Laboratory for Materials ScienceInstitute of Metal ResearchChinese Academy of SciencesShenyang110016China
| | - Xiaomin Xu
- Shenzhen International Graduate School & Tsinghua‐Berkeley Shenzhen InstituteTsinghua UniversityShenzhen518055China
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7
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Kim H, Kang J, Kim MI, Jeong W, Baek S, Ahn H, Chung DS, Jung IH. Development of n-Type Small-Molecule Acceptors for Low Dark Current Density and Fast Response Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 38032313 DOI: 10.1021/acsami.3c11174] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Suppressing the dark current density (Jd) while maintaining sufficient charge transport is important for improving the specific detectivity (D*) and dynamic characteristics of organic photodetectors (OPDs). In this study, we synthesized three novel small-molecule acceptors (SMAs) densely surrounded by insulating alkyl side chains to minimize the Jd in OPDs. Introducing trialkylated N-annulated perylene diimide as a terminal moiety to the alkylated π-conjugated core structure was highly efficient in suppressing Jd in the devices, resulting in an extremely low Jd of 4.60 × 10-11 A cm-2 and 10-100 times improved D* values in the devices. In addition, SMAs with a geometrically aligned backbone structure exhibited better intermolecular ordering in the blended films, resulting in 3-10 times as high responsivity (R) values in the OPDs. Outstanding OPD performances with a D* of 8.09 × 1012 Jones, -3 dB cutoff frequency of 205.2 kHz, and rising response time of 16 μs were achieved under a 530 nm illumination in photoconductive mode. Geometrically aligned core-terminal SMAs densely surrounded by insulating alkyl side chains are promising for improving the static and dynamic properties of OPDs.
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Affiliation(s)
- Hyeokjun Kim
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - Jinhyeon Kang
- Light/Display Convergence R&BD Division, Cheorwon Plasma Research Institute, 7194 Geumgang-ro, Seo-myeon, Cheorwon-gun, Gangwon-do 24062, Republic of Korea
| | - Myeong In Kim
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - WonJo Jeong
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
| | - Seyeon Baek
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37363, Republic of Korea
| | - Hyungju Ahn
- Pohang Accelerator Laboratory, POSTECH, Pohang 37673, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang 37363, Republic of Korea
| | - In Hwan Jung
- Department of Organic and Nano Engineering, and Human-Tech Convergence Program, 222 Wangsimni-ro, Seongdong-gu, Hanyang University, Seoul 04763, Republic of Korea
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Alijani H, Reineck P, Komljenovic R, Russo SP, Low MX, Balendhran S, Crozier KB, Walia S, Nash GR, Yeo LY, Rezk AR. The Acoustophotoelectric Effect: Efficient Phonon-Photon-Electron Coupling in Zero-Voltage-Biased 2D SnS 2 for Broad-Band Photodetection. ACS NANO 2023; 17:19254-19264. [PMID: 37755696 DOI: 10.1021/acsnano.3c06075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/28/2023]
Abstract
Two-dimensional (2D) layered metal dichalcogenides constitute a promising class of materials for photodetector applications due to their excellent optoelectronic properties. The most common photodetectors, which work on the principle of photoconductive or photovoltaic effects, however, require either the application of external voltage biases or built-in electric fields, which makes it challenging to simultaneously achieve high responsivities across broad-band wavelength excitation─especially beyond the material's nominal band gap─while producing low dark currents. In this work, we report the discovery of an intricate phonon-photon-electron coupling─which we term the acoustophotoelectric effect─in SnS2 that facilitates efficient photodetection through the application of 100 MHz order propagating surface acoustic waves (SAWs). This effect not only reduces the band gap of SnS2 but also provides the requisite momentum for indirect band gap transition of the photoexcited charge carriers, to enable broad-band photodetection beyond the visible light range, while maintaining pA-order dark currents─ without the need for any external voltage bias. More specifically, we show in the infrared excitation range that it is possible to achieve up to 8 orders of magnitude improvement in the material's photoresponsivity compared to that previously reported for SnS2-based photodetectors, in addition to exhibiting superior performance compared to most other 2D materials reported to date for photodetection.
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Affiliation(s)
- Hossein Alijani
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Philipp Reineck
- ARC Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Robert Komljenovic
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Salvy P Russo
- ARC Centre of Excellence in Exciton Science, School of Science, RMIT University, Melbourne, Victoria 3001, Australia
| | - Mei Xian Low
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | | | - Kenneth B Crozier
- School of Physics, The University of Melbourne, Parkville, Victoria 3010, Australia
- Department of Electrical and Electronic Engineering, The University of Melbourne, Parkville, Victoria 3010, Australia
- ARC Centre of Excellence for Transformative Meta-Optical Systems, The University of Melbourne, Parkville, Victoria 3010, Australia
| | - Sumeet Walia
- School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
| | - Geoff R Nash
- Natural Sciences, Faculty of Environment, Science and Economy, University of Exeter, Exeter EX4 4QF, United Kingdom
| | - Leslie Y Yeo
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
| | - Amgad R Rezk
- Micro/Nanophysics Research Laboratory, RMIT University, Melbourne, Victoria 3001, Australia
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9
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Xiao J, Wang Y, Yuan L, Long Y, Jiang Z, Liu Q, Gu D, Li W, Tai H, Jiang Y. Stabilizing Non-Fullerene Organic Photodiodes through Interface Engineering Enabled by a Tin Ion-Chelated Polymer. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2302976. [PMID: 37541299 PMCID: PMC10558641 DOI: 10.1002/advs.202302976] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2023] [Revised: 07/02/2023] [Indexed: 08/06/2023]
Abstract
The recent emergence of non-fullerene acceptors (NFAs) has energized the field of organic photodiodes (OPDs) and made major breakthroughs in their critical photoelectric characteristics. Yet, stabilizing inverted NF-OPDs remains challenging because of the intrinsic degradation induced by improper interfaces. Herein, a tin ion-chelated polyethyleneimine ethoxylated (denoted as PEIE-Sn) is proposed as a generic cathode interfacial layer (CIL) of NF-OPDs. The chelation between tin ions and nitrogen/oxygen atoms in PEIE-Sn contributes to the interface compatibility with efficient NFAs. The PEIE-Sn can effectively endow the devices with optimized cascade alignment and reduced interface defects. Consequently, the PEIE-Sn-OPD exhibits properties of anti-environmental interference, suppressed dark current, and accelerated interfacial electron extraction and transmission. As a result, the unencapsulated PEIE-Sn-OPD delivers high specific detection and fast response speed and shows only slight attenuation in photoelectric performance after exposure to air, light, and heat. Its superior performance outperforms the incumbent typical counterparts (ZnO, SnO2 , and PEIE as the CILs) from metrics of both stability and photoelectric characteristics. This finding suggests a promising strategy for stabilizing NF-OPDs by designing appropriate interface layers.
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Affiliation(s)
- Jianhua Xiao
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Yang Wang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Liu Yuan
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Yin Long
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Zhi Jiang
- Innovative Center for Flexible Devices (iFLEX)School of Materials Science and EngineeringNanyang Technological University50 Nanyang AvenueSingapore639798Singapore
| | - Qingxia Liu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Deen Gu
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Weizhi Li
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Huiling Tai
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
| | - Yadong Jiang
- State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu610054China
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10
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Huang J, Luong HM, Lee J, Chae S, Yi A, Qu ZZ, Du Z, Choi DG, Kim HJ, Nguyen TQ. Green-Solvent-Processed High-Performance Broadband Organic Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:37748-37755. [PMID: 37505202 DOI: 10.1021/acsami.3c09391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/29/2023]
Abstract
Solution-processed organic photodetectors with broadband activity have been demonstrated with an environmentally benign solvent, ortho-xylene (o-xylene), as the processing solvent. The organic photodetectors employ a wide band gap polymer donor PBDB-T and a narrow band gap small-molecule non-fullerene acceptor CO1-4F, both dissolvable in o-xylene at a controlled temperature. The o-xylene-processed devices have shown external quantum efficiency of up to 70%, surpassing the counterpart processed with chlorobenzene. With a well-suppressed dark current, the device can also present a high specific detectivity of over 1012 Jones at -2 V within practical operation frequencies and is applicable for photoplethysmography with its fast response. These results further highlight the potential of green-solvent-processed organic photodetectors as a high-performing alternative to their counterparts processed in toxic chlorinated solvents without compromising the excellent photosensing performance.
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Affiliation(s)
- Jianfei Huang
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Hoang Mai Luong
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Jaewon Lee
- Department of Chemical Engineering and Applied Chemistry, Chungnam National University, Daejeon 34134, South Korea
| | - Sangmin Chae
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Ahra Yi
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Department of Organic Material Science and Engineering, School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Zhong-Ze Qu
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Zhifang Du
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
| | - Dylan G Choi
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
| | - Hyo Jung Kim
- Department of Organic Material Science and Engineering, School of Chemical Engineering, Pusan National University, Busan 46241, Republic of Korea
| | - Thuc-Quyen Nguyen
- Center for Polymers and Organic Solids, University of California, Santa Barbara, University of California, Santa Barbara, California 93106, United States
- Mitsubishi Chemical Center for Advanced Materials, Materials Research Laboratory, University of California, Santa Barbara, California 93106, United States
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11
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Jacoutot P, Scaccabarozzi AD, Nodari D, Panidi J, Qiao Z, Schiza A, Nega AD, Dimitrakopoulou-Strauss A, Gregoriou VG, Heeney M, Chochos CL, Bakulin AA, Gasparini N. Enhanced sub-1 eV detection in organic photodetectors through tuning polymer energetics and microstructure. SCIENCE ADVANCES 2023; 9:eadh2694. [PMID: 37285428 DOI: 10.1126/sciadv.adh2694] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2023] [Accepted: 05/04/2023] [Indexed: 06/09/2023]
Abstract
One of the key challenges facing organic photodiodes (OPDs) is increasing the detection into the infrared region. Organic semiconductor polymers provide a platform for tuning the bandgap and optoelectronic response to go beyond the traditional 1000-nanometer benchmark. In this work, we present a near-infrared (NIR) polymer with absorption up to 1500 nanometers. The polymer-based OPD delivers a high specific detectivity D* of 1.03 × 1010 Jones (-2 volts) at 1200 nanometers and a dark current Jd of just 2.3 × 10-6 ampere per square centimeter at -2 volts. We demonstrate a strong improvement of all OPD metrics in the NIR region compared to previously reported NIR OPD due to the enhanced crystallinity and optimized energy alignment, which leads to reduced charge recombination. The high D* value in the 1100-to-1300-nanometer region is particularly promising for biosensing applications. We demonstrate the OPD as a pulse oximeter under NIR illumination, delivering heart rate and blood oxygen saturation readings in real time without signal amplification.
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Affiliation(s)
- Polina Jacoutot
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Alberto D Scaccabarozzi
- Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, via Raffaele Rubattino 81, Milano 20134, Italy
| | - Davide Nodari
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Julianna Panidi
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Zhuoran Qiao
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Andriana Schiza
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
| | - Alkmini D Nega
- Clinical Cooperation Unit Nuclear Medicine, German Cancer Research Center, 69120 Heidelberg, Germany
| | | | - Vasilis G Gregoriou
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras 26504, Greece
| | - Martin Heeney
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Thuwal 23955, Saudi Arabia
| | - Christos L Chochos
- Institute of Chemical Biology, National Hellenic Research Foundation, 48 Vassileos Constantinou Avenue, Athens 11635, Greece
- Advent Technologies SA, Stadiou Street, Platani, Rio, Patras 26504, Greece
| | - Artem A Bakulin
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
| | - Nicola Gasparini
- Department of Chemistry and Centre for Processable Electronics, Imperial College London, London W12 0BZ, UK
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12
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Zhang Y, Yu Y, Liu X, Miao J, Han Y, Liu J, Wang L. An n-Type All-Fused-Ring Molecule with Photoresponse to 1000 nm for Highly Sensitive Near-Infrared Photodetector. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2211714. [PMID: 36842062 DOI: 10.1002/adma.202211714] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/14/2022] [Revised: 02/04/2023] [Indexed: 05/19/2023]
Abstract
Most of all-fused-ring π-conjugated molecules have wide or medium bandgap and show photo response in the visible range. In this work, an all-fused-ring n-type molecule, which exhibits an ultrasmall optical bandgap of 1.22 eV and strong near-infrared (NIR) absorption with an onset absorption wavelength of 1013 nm is reported. The molecule consists of 14 aromatic rings and has electron donor-acceptor characteristics. It exhibits excellent n-type properties with low-lying HOMO/LUMO energy levels of -5.48 eV/-3.95 eV and high electron mobility of 7.0 × 10-4 cm2 V-1 s-1 . Most importantly, its thin film exhibits a low trap density of 5.55 × 1016 cm-3 because of the fixed molecular conformation and consequently low conformation disorder. As a result, organic photodetector (OPD) based on the compound exhibits a remarkably low dark current density (Jd ) of 2.01 × 10-10 A cm-2 at 0 V. The device shows a shot-noise-limited specific detectivity (Dsh *) of exceeding 1013 Jones at 400-1000 nm wavelength region with a peak specific detectivity of 4.65 × 1013 Jones at 880 nm. This performance is among the best reported for self-powered NIR OPDs.
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Affiliation(s)
- Yingze Zhang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Yingjian Yu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Xinyu Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Junhui Miao
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
| | - Yanchun Han
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Jun Liu
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
| | - Lixiang Wang
- State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130022, P. R. China
- School of Applied Chemistry and Engineering, University of Science and Technology of China, Hefei, 230026, P. R. China
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13
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Xu X, Zhao Y, Liu Y. Wearable Electronics Based on Stretchable Organic Semiconductors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2206309. [PMID: 36794301 DOI: 10.1002/smll.202206309] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/14/2022] [Revised: 12/25/2022] [Indexed: 05/18/2023]
Abstract
Wearable electronics are attracting increasing interest due to the emerging Internet of Things (IoT). Compared to their inorganic counterparts, stretchable organic semiconductors (SOSs) are promising candidates for wearable electronics due to their excellent properties, including light weight, stretchability, dissolubility, compatibility with flexible substrates, easy tuning of electrical properties, low cost, and low temperature solution processability for large-area printing. Considerable efforts have been dedicated to the fabrication of SOS-based wearable electronics and their potential applications in various areas, including chemical sensors, organic light emitting diodes (OLEDs), organic photodiodes (OPDs), and organic photovoltaics (OPVs), have been demonstrated. In this review, some recent advances of SOS-based wearable electronics based on the classification by device functionality and potential applications are presented. In addition, a conclusion and potential challenges for further development of SOS-based wearable electronics are also discussed.
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Affiliation(s)
- Xinzhao Xu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yan Zhao
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
| | - Yunqi Liu
- Laboratory of Molecular Materials and Devices, Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China
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14
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Thachoth Chandran H, Tang H, Liu T, Mahadevan S, Liu K, Lu Z, Huang J, Ren Z, Liao F, Chai Y, Fong PW, Tsang SW, Lu S, Li G. Architecturally simple organic photodiodes with highly competitive figures of merit via a facile self-assembly strategy. MATERIALS HORIZONS 2023; 10:918-927. [PMID: 36546551 DOI: 10.1039/d2mh01164f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Photodetectors (PDs) based on organic materials exhibit potential advantages such as low-temperature processing, and superior mechanical properties and form factors. They have seen rapid strides toward achieving performance metrics comparable to inorganic counterparts. Here, a simplified device architecture is employed to realize stable and high-performance organic PDs (OPDs) while further easing the device fabrication process. In contrast to the sequential deposition of the hole blocking layer (HBL) and active layer (conventional 'two-step' processing), the proposed strategy forms a self-assembled HBL and active layer in a 'single-step' process. A high-performance UV-Vis-NIR OPD based on the PM6:BTP-eC9 system is demonstrated using this cost-effective processing strategy. The green solvent processed proof-of-concept device exhibits remarkable responsivity of ∼0.5 A W-1, lower noise current than conventional two-step OPD, ultrafast rise/fall times of 1.4/1.6 μs (comparable to commercial silicon diode), and a broad linear dynamic range of 140 dB. Importantly, highly stable (light and heat) devices compared to those processed by the conventional method are realized. The broad application potential of this elegant strategy is proven by demonstrating the concept in three representative systems with broadband sensing competence.
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Affiliation(s)
- Hrisheekesh Thachoth Chandran
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Hua Tang
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
- Thin-film Solar Technology Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P. R. China
| | - Taili Liu
- College of Physics and Electronic Information, Yunnan Normal University, Yunnan Kunming 650500, China
- Yunnan Provincial Key Laboratory for Photoelectric Information Technology, Yunnan Normal University, Yunnan Kunming 650500, China
| | - Sudhi Mahadevan
- Department of Materials Science and Engineering, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Kuan Liu
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Zhen Lu
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Jiaming Huang
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Zhiwei Ren
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Fuyou Liao
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China
| | - Patrick Wk Fong
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
| | - Sai-Wing Tsang
- Department of Materials Science and Engineering, Center of Super-Diamond and Advanced Films (COSDAF), City University of Hong Kong, Hong Kong SAR, P. R. China
| | - Shirong Lu
- Thin-film Solar Technology Research Center, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing, 400714, P. R. China
| | - Gang Li
- Department of Electronic and Information Engineering, Research Institute for Smart Energy (RISE), The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong SAR, P. R. China.
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15
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Liu J, Wang J, Xian K, Zhao W, Zhou Z, Li S, Ye L. Organic and quantum dot hybrid photodetectors: towards full-band and fast detection. Chem Commun (Camb) 2023; 59:260-269. [PMID: 36510729 DOI: 10.1039/d2cc05281d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Abstract
Photodetectors hold great application potential in many fields such as image sensing, night vision, infrared communication and health monitoring. To date, commercial photodetectors mainly rely on inorganic semiconductors, e.g., monocrystalline silicon, germanium, and indium selenide/gallium with complex and costly fabrication, which are hardly compatible with wearable electronics. In contrast, organic conjugated materials provide great superiority in flexibility and stretchability. In this Highlight, the unique properties of organic and quantum dot photodetectors were firstly discussed to reveal the great complementarity of the two technologies. Subsequently, the recent advance of organic/quantum dot hybrid photodetectors was outlined to highlight their great potential in developing broadband and high-performance photodetectors. Moreover, the multiple functions (e.g., dual-band detection and upconversion detection) of hybrid photodetectors were highlighted for their promising application in image sensing and infrared detection. Lastly, we present a forword-looking discussion on the challenges and our insights for the further advancement of hybrid photodetectors. This work may spark enormous research attention in organic/quantum dot electronics and advance the commercial applications.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China. .,State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Jingjing Wang
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Kaihu Xian
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Wenchao Zhao
- Co-Innovation Center of Efficient Processing and Utilization of Forest Resources, College of Materials Science and Engineering, Nanjing Forestry University, Nanjing 210037, China
| | - Zhihua Zhou
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China.
| | - Shaojuan Li
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
| | - Long Ye
- School of Materials Science and Engineering, School of Environmental Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300350, China. .,State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.
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16
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Xu D, Zhu X, An J, Chen G, Bao J, Xu X. UV-vis-IR Broad Spectral Photodetectors Based on VO 2-ZnO Nanocrystal Films. ACS OMEGA 2022; 7:37078-37084. [PMID: 36312338 PMCID: PMC9607667 DOI: 10.1021/acsomega.2c02549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/24/2022] [Accepted: 07/25/2022] [Indexed: 06/16/2023]
Abstract
As a narrow band semiconductor at room temperature and a metallic material above ∼68 °C, functional VO2 films are widely investigated for smart windows, whereas their potential for ultraviolet-visible-infrared (UV-vis-IR) broad spectral photodetectors has not been efficiently studied. In this report, photodetectors based on VO2-ZnO nanocrystal composite films were prepared by nanocrystal-mist (NC-mist) deposition. An enhanced photodetection switching ratio was achieved covering the ultraviolet to infrared wavelength. Due to the synergetic effect of nanosize, surface, phase transition, percolation threshold, and the band structure of the heterojunction, the transfer and transport of photogenerated carriers modulate the device performance. This study probes new chances of applying VO2-semiconductor-based nanocomposites for broad spectral photodetectors.
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17
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Liu M, Fan Q, Wang J, Lin F, Zhao Z, Yang K, Zhao X, Zhou Z, Jen AKY, Zhang F. Double-Layered Strategy for Broadband Photomultiplication-Type Organic Photodetectors and Achieving Narrowband Response in Violet, Red, and Near-Infrared Light. ACS APPLIED MATERIALS & INTERFACES 2022; 14:45636-45643. [PMID: 36172726 DOI: 10.1021/acsami.2c12154] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Broadband photomultiplication-type organic photodetectors (PM-OPDs) were prepared with PMBBDT:PY3Se-2V (1:1, wt/wt) as the absorbing layer (AL) and PC71BM:P3HT (100:5, wt/wt) as the photomultiplication layer (PML) on the basis of the sandwich structure. The incident photons from ultraviolet light to the near-infrared region can be harvested by AL. The rather less P3HT in PML can produce plenty of isolated hole traps with P3HT surrounded by PC71BM; the electron tunneling injection induced by trapped holes near the Ag electrode can lead to the photomultiplication (PM) phenomenon. The performance of PM-OPDs can be effectively improved by optimizing the AL thickness. The optimal PM-OPDs exhibit a broad spectral response from 300 to 1050 nm as well as an external quantum efficiency (EQE) of 5800% at 340 nm at 10 V bias, along with a specific detectivity (D*) of 3.78 × 1013 Jones. The spectral response of PM-OPDs is controlled by the trapped-hole distribution near the Ag electrode, primarily originating from the photogenerated holes in AL. To further optimize the spectral response of PM-OPDs, the optical filter layer (OFL) was used to manipulate light field distribution in AL. The violet, red, and near-infrared-light PM-OPDs were developed by employing different OFLs.
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Affiliation(s)
- Ming Liu
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Qunping Fan
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xian 710049, Shanxi Province, China
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Jian Wang
- College of Physics and Electronic Engineering, Taishan University, Taian 271000, Shandong Province, China
| | - Francis Lin
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Zijin Zhao
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Kaixuan Yang
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Xingchao Zhao
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
| | - Zhengji Zhou
- National and Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technology, Henan University, Kaifeng 475004, Henan Province, China
| | - Alex K-Y Jen
- Department of Chemistry, City University of Hong Kong, Kowloon 999077, Hongkong, China
- Hong Kong Institute for Clean Energy, City University of Hong Kong, Kowloon 999077, Hongkong, China
| | - Fujun Zhang
- School of Physical Science and Engineering, Beijing Jiaotong University, Beijing 100044, China
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18
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Shin C, Li N, Seo B, Eedugurala N, Azoulay JD, Ng TN. Heterojunction bilayers serving as a charge transporting interlayer reduce the dark current and enhance photomultiplication in organic shortwave infrared photodetectors. MATERIALS HORIZONS 2022; 9:2172-2179. [PMID: 35642962 DOI: 10.1039/d2mh00479h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Previous approaches to induce photomultiplication in organic diodes have increased the photosignal but lacked control over reducing background noise. This work presents a new interlayer design based on a heterojunction bilayer that concurrently enables photomultiplication and suppresses the dark current in organic shortwave infrared detectors to improve the overall detectivity. The heterojunction bilayer consists of a hole-transporting material copper thiocyanate and an electron-transporting material tin oxide, and this combination offers the ability to block charge injection in the dark. Under illumination, the bilayer promotes trap-assisted photomultiplication by lowering the tunneling barrier and amplifying the photocurrent through the injection of multiple carriers per absorbed photon. Upon incorporating the heterojunction interlayer in photodiodes and upconversion imagers, the devices achieve an external quantum efficiency up to 560% and a detectivity of 3.5 × 109 Jones. The upconversion efficiency of the imager doubles with a 1.7 fold improvement in contrast compared to the imager without the heterojunction interlayer. The new interlayer design is generalizable to work with different organic semiconductors, making it attractive and easy to integrate with emerging organic infrared systems.
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Affiliation(s)
- Chanho Shin
- Department of Material Science and Engineering Program, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0407, USA.
| | - Ning Li
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0407, USA
| | - Bogyeom Seo
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0407, USA
| | - Naresh Eedugurala
- School of Polymer Science and Engineering, University of Southern Mississippi, 118 College Drive #5050, Hattiesburg, MS, 39406, USA
| | - Jason D Azoulay
- School of Polymer Science and Engineering, University of Southern Mississippi, 118 College Drive #5050, Hattiesburg, MS, 39406, USA
| | - Tse Nga Ng
- Department of Material Science and Engineering Program, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0407, USA.
- Department of Electrical and Computer Engineering, University of California San Diego, 9500 Gilman Drive, La Jolla, CA, 92093-0407, USA
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19
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Wang X, Gao S, Han J, Liu Z, Qiao W, Wang ZY. High-Performance All-Polymer Photodetectors Enabled by New Random Terpolymer Acceptor with Fine-Tuned Molecular Weight. ACS APPLIED MATERIALS & INTERFACES 2022; 14:26978-26987. [PMID: 35656812 DOI: 10.1021/acsami.2c04775] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Reducing the dark current density and enhancing the overall performance of the device is the focal point in research for organic photodetectors. Two novel random terpolymers (P3 and P4) with different molecular weights are synthesized and evaluated as acceptors in bulk heterojunction (BHJ) polymer photodetectors. Compared with known acceptor materials, such as N2200 (P1) and F-N2200 (P2), polymer P4 has a lower lowest unoccupied molecular orbital (LUMO) energy level, favorable morphology, and good miscibility with a donor material J71, which leads to proper phase separation of the blend film and better dissociation of excitons and transport of carriers. Therefore, a considerably low dark current density (Jd) of 1.9 × 10-10 A/cm2 and a high specific detectivity (D*) of 1.8 × 1013 cm Hz1/2/W (also "Jones") at 580 nm under a -0.1 V bias are realized for the P4-based photodetector. More importantly, the device also exhibits a fast response speed (τr/τf = 1.24/1.87 μs) and a wide linear dynamic range (LDR) of 109.2 dB. This work demonstrates that high-performance all-polymer photodetectors with ideal morphology can be realized by random polymer acceptors with a fine-tuned molecular weight.
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Affiliation(s)
- Xin Wang
- State Key Laboratory of Fine Chemicals, Department of Polymer Science & Materials, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China
| | - Shijia Gao
- State Key Laboratory of Fine Chemicals, Department of Polymer Science & Materials, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China
| | - Jinfeng Han
- Department of Materials Science and Engineering and Department of Chemistry, Johns Hopkins University, Baltimore, Maryland 21218, United States
| | - Zhipeng Liu
- State Key Laboratory of Fine Chemicals, Department of Polymer Science & Materials, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China
| | - Wenqiang Qiao
- State Key Laboratory of Fine Chemicals, Department of Polymer Science & Materials, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China
| | - Zhi Yuan Wang
- State Key Laboratory of Fine Chemicals, Department of Polymer Science & Materials, School of Chemical Engineering, Dalian University of Technology, Dalian 116024, P. R. China
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20
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Realizing Broadband NIR Photodetection and Ultrahigh Responsivity with Ternary Blend Organic Photodetector. NANOMATERIALS 2022; 12:nano12081378. [PMID: 35458086 PMCID: PMC9027253 DOI: 10.3390/nano12081378] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/28/2022] [Revised: 04/11/2022] [Accepted: 04/13/2022] [Indexed: 02/05/2023]
Abstract
With the advancement of portable optoelectronics, organic semiconductors have been attracting attention for their use in the sensing of white and near-infrared light. Ideally, an organic photodiode (OPD) should simultaneously display high responsivity and a high response frequency. In this study we used a ternary blend strategy to prepare PM6: BTP-eC9: PCBM–based OPDs with a broad bandwidth (350–950 nm), ultrahigh responsivity, and a high response frequency. We monitored the dark currents of the OPDs prepared at various PC71BM blend ratios and evaluated their blend film morphologies using optical microscopy, atomic force microscopy, and grazing-incidence wide-angle X-ray scattering. Optimization of the morphology and energy level alignment of the blend films resulted in the OPD prepared with a PM6:BTP-eC9:PC71BM ternary blend weight ratio of 1:1.2:0.5 displaying an extremely low dark current (3.27 × 10−9 A cm−2) under reverse bias at −1 V, with an ultrahigh cut-off frequency (610 kHz, at 530 nm), high responsivity (0.59 A W–1, at −1.5 V), and high detectivity (1.10 × 1013 Jones, under a reverse bias of −1 V at 860 nm). Furthermore, the rise and fall times of this OPD were rapid (114 and 110 ns), respectively.
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21
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Kang M, Hassan SZ, Ko SM, Choi C, Kim J, Parumala SKR, Kim YH, Jang YH, Yoon J, Jee DW, Chung DS. A Molecular-Switch-Embedded Organic Photodiode for Capturing Images against Strong Backlight. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200526. [PMID: 35233855 DOI: 10.1002/adma.202200526] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2022] [Revised: 02/16/2022] [Indexed: 06/14/2023]
Abstract
When the intensity of the incident light increases, the photocurrents of organic photodiodes (OPDs) exhibit relatively early saturation, due to which OPDs cannot easily detect objects against strong backlights, such as sunlight. In this study, this problem is addressed by introducing a light-intensity-dependent transition of the operation mode, such that the operation mode of the OPD autonomously changes to overcome early photocurrent saturation as the incident light intensity passes the threshold intensity. The photoactive layer is doped with a strategically designed and synthesized molecular switch, 1,2-bis-(2-methyl-5-(4-cyanobiphenyl)-3-thienyl)tetrafluorobenzene (DAB). The proposed OPD exhibits a typical OPD performance with an external quantum efficiency (EQE) of <100% and a photomultiplication behavior with an EQE of >100% under low-intensity and high-intensity light illuminations, respectively, thereby resulting in an extension of the photoresponse linearity to a light intensity of 434 mW cm-2 . This unique and reversible transition of the operation mode can be explained by the unbalanced quantum yield of photocyclization/photocycloreversion of the molecular switch. The details of the operation mechanism are discussed in conjunction with various photophysical analyses. Furthermore, they establish a prototype image sensor with an array of molecular-switch-embedded OPD pixels to demonstrate their extremely high sensitivity against strong light illumination.
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Affiliation(s)
- Mingyun Kang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Syed Zahid Hassan
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Seong-Min Ko
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Changwon Choi
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Juhee Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Santosh K R Parumala
- Graduate Department of Chemical Materials, and Institute for Plastic Information and Energy Materials, Pusan National University, Busan, 46241, Republic of Korea
| | - Yun-Hi Kim
- Department of Chemistry and RIGET, Gyeongsang National University, Jinju, 52828, Republic of Korea
| | - Yun Hee Jang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu, 42988, Republic of Korea
| | - Jinhwan Yoon
- Graduate Department of Chemical Materials, and Institute for Plastic Information and Energy Materials, Pusan National University, Busan, 46241, Republic of Korea
| | - Dong-Woo Jee
- Department of Electrical and Computer Engineering, Ajou University, Suwon, 16499, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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22
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Chen R, Li L, Jiang L, Yu X, Zhu D, Xiong Y, Zheng D, Yang W. Small-diameter p-type SnS nanowire photodetectors and phototransistors with low-noise and high-performance. NANOTECHNOLOGY 2022; 33:135707. [PMID: 34933293 DOI: 10.1088/1361-6528/ac451f] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2021] [Accepted: 12/21/2021] [Indexed: 06/14/2023]
Abstract
P-type nanostructured photodetectors and phototransistors have been widely used in the field of photodetection due to their excellent electrical and optoelectronic characteristics. However, the large dark current of p-type photodetectors will limit the detectivity. Herein, we synthesized small-diameter single-crystalline p-type SnS nanowires (NWs) and then fabricated single SnS NW photodetectors and phototransistors. The device exhibits low noise and low dark current, and its noise current power is as low as 2.4 × 10-28A2. Under 830 nm illumination and low power density of 0.12 mW cm-2, the photoconductive gain, responsivity and detectivity of the photodetector are as high as 3.9 × 102, 2.6 × 102A W-1and 1.8 × 1013Jones, respectively, at zero gate voltage. The rise and fall time of response are about 9.6 and 14 ms. The experimental results show that the small-diameter p-type SnS NWs have broad application prospects in high-performance and low-power photodetectors with high sensitivity, fast response speed and wide spectrum detection in the future.
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Affiliation(s)
- Ruoling Chen
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Long Li
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Long Jiang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Xiangxiang Yu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Desheng Zhu
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Yan Xiong
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Dingshan Zheng
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
| | - Wenxing Yang
- School of Physics and Optoelectronic Engineering, Yangtze University, Jingzhou 434023, People's Republic of China
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23
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Wang Y, Kublitski J, Xing S, Dollinger F, Spoltore D, Benduhn J, Leo K. Narrowband organic photodetectors - towards miniaturized, spectroscopic sensing. MATERIALS HORIZONS 2022; 9:220-251. [PMID: 34704585 DOI: 10.1039/d1mh01215k] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Omnipresent quality monitoring in food products, blood-oxygen measurement in lightweight conformal wrist bands, or data-driven automated industrial production: Innovation in many fields is being empowered by sensor technology. Specifically, organic photodetectors (OPDs) promise great advances due to their beneficial properties and low-cost production. Recent research has led to rapid improvement in all performance parameters of OPDs, which are now on-par or better than their inorganic counterparts, such as silicon or indium gallium arsenide photodetectors, in several aspects. In particular, it is possible to directly design OPDs for specific wavelengths. This makes expensive and bulky optical filters obsolete and allows for miniature detector devices. In this review, recent progress of such narrowband OPDs is systematically summarized covering all aspects from narrow-photo-absorbing materials to device architecture engineering. The recent challenges for narrowband OPDs, like achieving high responsivity, low dark current, high response speed, and good dynamic range are carefully addressed. Finally, application demonstrations covering broadband and narrowband OPDs are discussed. Importantly, several exciting research perspectives, which will stimulate further research on organic-semiconductor-based photodetectors, are pointed out at the very end of this review.
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Affiliation(s)
- Yazhong Wang
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Jonas Kublitski
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Shen Xing
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Felix Dollinger
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Donato Spoltore
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Johannes Benduhn
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
| | - Karl Leo
- Dresden Integrated Center for Applied Physics and Photonic Materials (IAPP) and Institute for Applied Physics, Technische Universität Dresden, Nöthnitzer Str. 61, 01187 Dresden, Germany.
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24
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Li Y, Chen H, Zhang J. Carrier Blocking Layer Materials and Application in Organic Photodetectors. NANOMATERIALS 2021; 11:nano11061404. [PMID: 34073349 PMCID: PMC8228918 DOI: 10.3390/nano11061404] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/21/2021] [Revised: 05/21/2021] [Accepted: 05/24/2021] [Indexed: 11/16/2022]
Abstract
As a promising candidate for next-generation photodetectors, organic photodetectors (OPDs) have gained increasing interest as they offer cost-effective fabrication methods using solution processes and a tunable spectral response range, making them particularly attractive for large area image sensors on lightweight flexible substrates. Carrier blocking layers engineering is very important to the high performance of OPDs that can select a certain charge carriers (holes or electrons) to be collected and suppress another carrier. Carrier blocking layers of OPDs play a critical role in reducing dark current, boosting their efficiency and long-time stability. This Review summarizes various materials for carrier blocking layers and some of the latest progress in OPDs. This provides the reader with guidelines to improve the OPD performance via carrier blocking layers engineering.
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25
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Eun HJ, Kye H, Kim D, Jin IS, Jung JW, Ko SJ, Heo J, Kim BG, Kim JH. Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor. ACS APPLIED MATERIALS & INTERFACES 2021; 13:11144-11150. [PMID: 33624502 DOI: 10.1021/acsami.0c22808] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Near-infrared organic photodetectors (NIR OPDs) have attracted considerable attention because of their inherent advantages such as a tailorable light absorption property, low-cost fabrication, compatibility with flexible substrates, and room-temperature operation. In particular, the development of NIR detection between 900 and 950 nm is crucial for noise-free communication in ambient environments. In this work, we demonstrate high-detectivity NIR OPDs at 900-950 nm by employing a non-fullerene acceptor (ITIC) used with an NIR-absorbing conjugated polymer (PNIR) for bulk heterojunction (BHJ), which significantly suppressed dark current. Systemic characterizations including electrical, structural, and morphological analyses revealed that ITIC effectively reduces charge recombination during the operation of the OPDs under NIR illumination, resulting in a dark current reduction and high detectivity of over 3.2 × 1011 Jones at 900-950 nm. The results presented here demonstrate that utilizing a non-fullerene acceptor for BHJ-type NIR OPDs is evidently a strategic approach for the simultaneous achievement of the low dark current and high-detectivity of NIR OPDs.
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Affiliation(s)
- Hyeong Ju Eun
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
| | - Hyojin Kye
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Dahee Kim
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - In Su Jin
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea
| | - Jae Woong Jung
- Department of Advanced Materials Engineering for Information & Electronics, Kyung Hee University, 1732 Deogyeong-daero, Giheung-gu, Yongin-si, Gyeonggi-do 446-701, Republic of Korea
| | - Seo-Jin Ko
- Division of Advanced Materials, Korea Research Institute of Chemical Technology, Daejeon 305-600, Republic of Korea
| | - Junseok Heo
- Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Republic of Korea
| | - Bong-Gi Kim
- Department of Organic and Nano System Engineering, Konkuk University, Seoul 05029, Republic of Korea
| | - Jong H Kim
- Department of Molecular Science and Technology, Ajou University, Suwon 16449, Republic of Korea
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