1
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Ge M, Zeng F, Wang Z, Ma JJ, Zhang J. Band alignment of one-dimensional transition-metal dichalcogenide heterotubes. NANOSCALE 2024. [PMID: 39225006 DOI: 10.1039/d4nr03384a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/04/2024]
Abstract
One-dimensional (1D) van der Waals (vdW) heterotubes, where different kinds of 1D nanotubes coaxially nest inside each other, offer a flexible platform for promising applications. The various properties of these 1D heterotubes depend on their diameter. Here, we present a systematic theoretical investigation into the structural and electronic properties of two kinds of 1D transition-metal dichalcogenide (TMD) heterotubes. We demonstrate that the thermodynamic stability of 1D heterotubes is determined by their interlayer distance. Additionally, we establish that the band alignment transition changes from type I to type II in 1D TMD heterotubes. We identify two distinct transition mechanisms, originating from the exchange of either the valence band maximum or the conduction band minimum. According to an electrostatic model, the band alignment transition is attributed to the interlayer electric field effect, which depends on the heterotube diameter. The findings in this work provide valuable physical insights into the band alignment transition in 1D heterotubes and are instrumental for their potential applications in nanotechnology.
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Affiliation(s)
- Mei Ge
- College of Physics and Electronic Engineering, Hainan Normal University, Haikou, 571158, China.
| | - Fanmin Zeng
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Zixuan Wang
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Jiang-Jiang Ma
- School of Physics and Information Engineering, Shanxi Normal University, Taiyuan 030031, China.
| | - Junfeng Zhang
- College of Physics and Electronic Engineering, Hainan Normal University, Haikou, 571158, China.
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2
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Saida Y, Gauthier T, Suzuki H, Ohmura S, Shikata R, Iwasaki Y, Noyama G, Kishibuchi M, Tanaka Y, Yajima W, Godin N, Privault G, Tokunaga T, Ono S, Koshihara SY, Tsuruta K, Hayashi Y, Bertoni R, Hada M. Photoinduced dynamics during electronic transfer from narrow to wide bandgap layers in one-dimensional heterostructured materials. Nat Commun 2024; 15:4600. [PMID: 38816382 PMCID: PMC11139937 DOI: 10.1038/s41467-024-48880-3] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Accepted: 05/16/2024] [Indexed: 06/01/2024] Open
Abstract
Electron transfer is a fundamental energy conversion process widely present in synthetic, industrial, and natural systems. Understanding the electron transfer process is important to exploit the uniqueness of the low-dimensional van der Waals (vdW) heterostructures because interlayer electron transfer produces the function of this class of material. Here, we show the occurrence of an electron transfer process in one-dimensional layer-stacking of carbon nanotubes (CNTs) and boron nitride nanotubes (BNNTs). This observation makes use of femtosecond broadband optical spectroscopy, ultrafast time-resolved electron diffraction, and first-principles theoretical calculations. These results reveal that near-ultraviolet photoexcitation induces an electron transfer from the conduction bands of CNT to BNNT layers via electronic decay channels. This physical process subsequently generates radial phonons in the one-dimensional vdW heterostructure material. The gathered insights unveil the fundamentals physics of interfacial interactions in low dimensional vdW heterostructures and their photoinduced dynamics, pushing their limits for photoactive multifunctional applications.
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Affiliation(s)
- Yuri Saida
- Graduate School of Science and Technology, University of Tsukuba, Tsukuba, 305-8573, Japan
| | - Thomas Gauthier
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, F-35000, Rennes, France
| | - Hiroo Suzuki
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan.
| | - Satoshi Ohmura
- Faculty of Engineering, Hiroshima Institute of Technology, Hiroshima, 731-5193, Japan.
| | - Ryo Shikata
- Graduate School of Science and Technology, University of Tsukuba, Tsukuba, 305-8573, Japan
| | - Yui Iwasaki
- Graduate School of Science and Technology, University of Tsukuba, Tsukuba, 305-8573, Japan
| | - Godai Noyama
- Graduate School of Science and Technology, University of Tsukuba, Tsukuba, 305-8573, Japan
| | - Misaki Kishibuchi
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan
| | - Yuichiro Tanaka
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan
| | - Wataru Yajima
- Graduate School of Science and Technology, University of Tsukuba, Tsukuba, 305-8573, Japan
| | - Nicolas Godin
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, F-35000, Rennes, France
| | - Gaël Privault
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, F-35000, Rennes, France
| | - Tomoharu Tokunaga
- Graduate School of Engineering, Nagoya University, Nagoya, 464-8603, Japan
| | - Shota Ono
- Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Shin-Ya Koshihara
- School of Science, Tokyo Institute of Technology, Tokyo, 152-8551, Japan
| | - Kenji Tsuruta
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan
| | - Yasuhiko Hayashi
- Graduate School of Environmental, Life, Natural Science and Technology, Okayama University, Okayama, 700-8530, Japan
| | - Roman Bertoni
- Univ Rennes, CNRS, IPR (Institut de Physique de Rennes)-UMR 6251, F-35000, Rennes, France.
| | - Masaki Hada
- Institute of Pure and Applied Science and Tsukuba Research Center for Energy Materials Science (TREMS), University of Tsukuba, Tsukuba, 305-8573, Japan.
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3
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Wang S, Levshov DI, Otsuka K, Zhang BW, Zheng Y, Feng Y, Liu M, Kauppinen EI, Xiang R, Chiashi S, Wenseleers W, Cambré S, Maruyama S. Evaluating the Efficiency of Boron Nitride Coating in Single-Walled Carbon-Nanotube-Based 1D Heterostructure Films by Optical Spectroscopy. ACS NANO 2024; 18:9917-9928. [PMID: 38548470 PMCID: PMC11008362 DOI: 10.1021/acsnano.3c09615] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/04/2023] [Revised: 03/04/2024] [Accepted: 03/07/2024] [Indexed: 04/10/2024]
Abstract
Single-walled carbon nanotube (SWCNT) films exhibit exceptional optical and electrical properties, making them highly promising for scalable integrated devices. Previously, we employed SWCNT films as templates for the chemical vapor deposition (CVD) synthesis of one-dimensional heterostructure films where boron nitride nanotubes (BNNTs) and molybdenum disulfide nanotubes (MoS2NTs) were coaxially nested over the SWCNT networks. In this work, we have further refined the synthesis method to achieve precise control over the BNNT coating in SWCNT@BNNT heterostructure films. The resulting structure of the SWCNT@BNNT films was thoroughly characterized using a combination of electron microscopy, UV-vis-NIR spectroscopy, Fourier-transform infrared (FT-IR) spectroscopy, and Raman spectroscopy. Specifically, we investigated the pressure effect induced by BNNT wrapping on the SWCNTs in the SWCNT@BNNT heterostructure film and demonstrated that the shifts of the SWCNT's G and 2D (G') modes in Raman spectra can be used as a probe of the efficiency of BNNT coating. In addition, we studied the impact of vacuum annealing on the removal of the initial doping in SWCNTs, arising from exposure to ambient atmosphere, and examined the effect of MoO3 doping in SWCNT films by using UV-vis-NIR spectroscopy and Raman spectroscopy. We show that through correlation analysis of the G and 2D (G') modes in Raman spectra, it is possible to discern distinct types of doping effects as well as the influence of applied pressure on the SWCNTs within SWCNT@BNNT heterostructure films. This work contributes to a deeper understanding of the strain and doping effect in both SWCNTs and SWCNT@BNNTs, thereby providing valuable insights for future applications of carbon-nanotube-based one-dimensional heterostructures.
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Affiliation(s)
- Shuhui Wang
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Dmitry I. Levshov
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
- Nanostructured
and Organic Optical and Electronic Materials, Department of Physics, University of Antwerp, Antwerp 2610, Belgium
| | - Keigo Otsuka
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Bo-Wen Zhang
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Yongjia Zheng
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
- State
Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical
Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
| | - Ya Feng
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Ming Liu
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Esko I. Kauppinen
- Department
of Applied Physics, Aalto University School
of Science, Espoo 15100, FI-00076 Aalto, Finland
| | - Rong Xiang
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
- State
Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical
Engineering, Zhejiang University, Hangzhou 310027, People’s Republic of China
| | - Shohei Chiashi
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Wim Wenseleers
- Nanostructured
and Organic Optical and Electronic Materials, Department of Physics, University of Antwerp, Antwerp 2610, Belgium
| | - Sofie Cambré
- Nanostructured
and Organic Optical and Electronic Materials, Department of Physics, University of Antwerp, Antwerp 2610, Belgium
| | - Shigeo Maruyama
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
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4
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Feng Y, Sato Y, Inoue T, Xiang R, Suenaga K, Maruyama S. Enhanced Thermal Conductivity of Single-Walled Carbon Nanotube with Axial Tensile Strain Enabled by Boron Nitride Nanotube Anchoring. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2308571. [PMID: 38032162 DOI: 10.1002/smll.202308571] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/26/2023] [Revised: 11/11/2023] [Indexed: 12/01/2023]
Abstract
Thermal conductivity measurements are conducted by optothermal Raman technique before and after the introduction of an axial tensile strain in a suspended single-walled carbon nanotube (SWCNT) through end-anchoring by boron nitride nanotubes (BNNTs). Surprisingly, the axial tensile strain (<0.4 %) in SWCNT results in a considerable enhancement of its thermal conductivity, and the larger the strain, the higher the enhancement. Furthermore, the thermal conductivity reduction with temperature is much alleviated for the strained nanotube compared to previously reported unstrained cases. The thermal conductivity of SWCNT increases with its length is also observed.
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Affiliation(s)
- Ya Feng
- Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, No.2 Linggong Road, Ganjingzi, Dalian, Liaoning, 116024, China
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
| | - Yuta Sato
- Nanomaterials Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Higashi, Tsukuba, Ibaraki, 305-8565, Japan
| | - Taiki Inoue
- Department of Applied Physics, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita-shi, Osaka, 565-0871, Japan
| | - Rong Xiang
- State Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical Engineering, Zhejiang University, 38 Zheda Road, Hangzhou, Zhejiang, 310027, China
| | - Kazu Suenaga
- The Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka, 567-0047, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan
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5
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Matsushita S, Otsuka K, Sugihara T, Zhu G, Kittipaisalsilpa K, Lee M, Xiang R, Chiashi S, Maruyama S. Horizontal Arrays of One-Dimensional van der Waals Heterostructures as Transistor Channels. ACS APPLIED MATERIALS & INTERFACES 2023; 15:10965-10973. [PMID: 36800512 DOI: 10.1021/acsami.2c22964] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The nanotube/dielectric interface plays an essential role in achieving superb switching characteristics of carbon nanotube-based transistors for energy-efficient computation. Formation of van der Waals heterostructures with hexagonal boron nitride nanotubes could be an effective means to reduce interface state density, but the need for isolating nanotubes during the formation of coaxial outer layers has hindered the fabrication of their horizontal arrays. Here, we develop a strategy to create isolated heterostructure arrays using aligned carbon nanotubes grown on a quartz substrate as starting materials. Air-suspended arrays of carbon nanotubes are prepared by a dry transfer technique and then used as templates for the coaxial wrapping of boron nitride nanotubes. We then fabricate the transistors, where boron nitride serves as interfacial layers between carbon nanotube channels and conventional gate dielectrics, showing hysteresis-free characteristics owing to the improved interfaces. We have also gained a deeper understanding of the strain applied on inner carbon nanotubes, as well as the inhomogeneity of the outer coating, by characterizing individual heterostructures over trenches and on a substrate surface. The device fabrication and characterization presented here essentially do not require elaborate electron microscopy, thus paving the way for the practical use of one-dimensional van der Waals heterostructures for nanoelectronics.
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Affiliation(s)
- Satoru Matsushita
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Keigo Otsuka
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Taiki Sugihara
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Guangyao Zhu
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | | | - Minhyeok Lee
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
- State Key Laboratory of Fluid Power and Mechatronic Systems, School of Mechanical Engineering, Zhejiang University, Hangzhou 310027, China
| | - Shohei Chiashi
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
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6
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Yu C, Zhang L, Zhou G, Zhang F, Zhang Z, Wu A, Hou P, Cheng H, Liu C. Defect-Induced Efficient Heteroepitaxial Growth of Single-Wall Carbon Nanotubes @ Hexagonal Boron Nitride Films. MATERIALS (BASEL, SWITZERLAND) 2023; 16:1864. [PMID: 36902984 PMCID: PMC10004222 DOI: 10.3390/ma16051864] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/01/2023] [Revised: 02/20/2023] [Accepted: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Carbon nanotube-based derivatives have attracted considerable research interest due to their unique structure and fascinating physicochemical properties. However, the controlled growth mechanism of these derivatives remains unclear, and the synthesis efficiency is low. Herein, we proposed a defect-induced strategy for the efficient heteroepitaxial growth of single-wall carbon nanotubes (SWCNTs)@hexagonal boron nitride (h-BN) films. Air plasma treatment was first performed to generate defects on the wall of SWCNTs. Then, atmospheric pressure chemical vapor deposition was conducted to grow h-BN on the surface of SWCNTs. Controlled experiments combined with first-principles calculations revealed that the induced defects on the wall of SWCNTs function as nucleation sites for the efficient heteroepitaxial growth of h-BN.
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Affiliation(s)
- Changping Yu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Lili Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Gang Zhou
- Shi-changxu Innovation Center for Advanced Materials, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Feng Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Zichu Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Anping Wu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
| | - Pengxiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
| | - Huiming Cheng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China
- School of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026, China
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7
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Su J, Li X, Xu M, Zhang J, Liu X, Zheng X, Shi Y, Zhang Q. Enhancing Photodetection Ability of MoS 2 Nanoscrolls via Interface Engineering. ACS APPLIED MATERIALS & INTERFACES 2023; 15:3307-3316. [PMID: 36596237 DOI: 10.1021/acsami.2c18537] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Van der Waals semiconductors have been really confirmed in two-dimensional (2D) layered systems beyond the traditional limits of lattice-matching requirements. The extension of this concept to the 1D atomic level may generate intriguing physical functionalities due to its non-covalent bonding surface. However, whether the curvature of the lattice in such rolled-up structures affects their optoelectronic features or the performance of devices established on them remains an open question. Here, MoS2-based nanoscrolls were obtained by virtue of an alkaline solution-assisted method and the 0D/1D (BaTiO3/MoS2) strategy to tune their optoelectronic properties and improve the light sensing performance was explored. The capillary force generated by a drop of NaHCO3 solution could drive the delamination of nanosheets from the underlying substrate and a spontaneous rolling-up process. The package of BaTiO3 particles in MoS2 nanoscrolls has been evident by TEM image, and the optical characterizations were mirrored via micro-Raman spectroscopy and photoluminescence. These bare MoS2 nanoscrolls reveal a reduced photoresponse compared to the plane structures due to the curvature of the lattice. However, such BaTiO3/MoS2 nanoscrolls exhibit a significantly improved photodetection (Rhybrid = 73.9 A/W vs Ronly = 1.1 A/W and R2D = 1.5 A/W at 470 nm, 0.58 mW·cm-2), potentially due to the carrier extraction/injection occurring between BaTiO3 and MoS2. This study thereby provides an insight into 1D van der Waals material community and demonstrates a general approach to fabricate high-performance 1D van der Waals optoelectronic devices.
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Affiliation(s)
- Jun Su
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Li
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Minxuan Xu
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Jian Zhang
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xiaolian Liu
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Xin Zheng
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Yueqin Shi
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
| | - Qi Zhang
- Center for Advanced Optoelectronic Materials, College of Materials and Environmental Engineering, Hangzhou Dianzi University (HDU), Hangzhou 310018, China
- Key Laboratory of Novel Materials for Sensor of Zhejiang Province, Hangzhou Dianzi University (HDU), Hangzhou 310018, P. R. China
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8
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Aftab S, Iqbal MZ, Rim YS. Recent Advances in Rolling 2D TMDs Nanosheets into 1D TMDs Nanotubes/Nanoscrolls. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205418. [PMID: 36373722 DOI: 10.1002/smll.202205418] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Revised: 10/25/2022] [Indexed: 06/16/2023]
Abstract
Transition metal dichalcogenides (TMDs) van der Waals (vdW) 1D heterostructures are recently synthesized from 2D nanosheets, which open up new opportunities for potential applications in electronic and optoelectronic devices. The most recent and promising strategies in regards to forming 1D TMDs nanotubes (NTs) or nanoscrolls (NSs) in this review article as well as their heterostructures that are produced from 2D TMDs are summarized. In order to improve the functionality of ultrathin 1D TMDs that are coaxially combined with boron nitride nanotubes and single-walled carbon nanotubes. 1D heterostructured devices perform better than 2D TMD nanosheets when the two devices are compared. The photovoltaic effect in WS2 or MoS2 NTs without a junction may exceed the Shockley-Queisser limit for the above-band-gap photovoltage generation. Photoelectrochemical hydrogen evolution is accelerated when monolayer WS2 or MoS2 NSs are incorporated into a heterojunction. In addition, the photovoltaic performance of the WSe2 /MoS2 NSs junction is superior to that of the performance of MoS2 NSs. The summary of the current research about 1D TMDs can be used in a variety of ways, which assists in the development of new types of nanoscale optoelectronic devices. Finally, it also summarizes the current challenges and prospects.
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Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Muhammad Zahir Iqbal
- Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, Khyber Pakhtunkhwa, 23640, Pakistan
| | - You Seung Rim
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
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9
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Hamadani BH. 2.11 - Accurate characterization of indoor photovoltaic performance. JPHYS MATERIALS 2023; 6:10.1088/2515-7639/acc550. [PMID: 37965623 PMCID: PMC10644663 DOI: 10.1088/2515-7639/acc550] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2023]
Abstract
Abstract
Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.
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10
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Zhang C, Fortner J, Wang P, Fagan JA, Wang S, Liu M, Maruyama S, Wang Y. van der Waals SWCNT@BN Heterostructures Synthesized from Solution-Processed Chirality-Pure Single-Wall Carbon Nanotubes. ACS NANO 2022; 16:18630-18636. [PMID: 36346984 DOI: 10.1021/acsnano.2c07128] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Single-wall carbon nanotubes in boron nitride (SWCNT@BN) are one-dimensional van der Waals heterostructures that exhibit intriguing physical and chemical properties. As with their carbon nanotube counterparts, these heterostructures can form from different combinations of chiralities, providing rich structures but also posing a significant synthetic challenge to controlling their structure. Enabled by advances in nanotube chirality sorting, clean removal of the surfactant used for solution processing, and a simple method to fabricate free-standing submonolayer films of chirality pure SWCNTs as templates for the BN growth, we show it is possible to directly grow BN on chirality enriched SWCNTs from solution processing to form van der Waals heterostructures. We further report factors affecting the heterostructure formation, including an accelerated growth rate in the presence of H2, and significantly improved crystallization of the grown BN, with the BN thickness controlled down to one single BN layer, through the presence of a Cu foil in the reactor. Transmission electron microscopy and electron energy-loss spectroscopic mapping confirm the synthesis of SWCNT@BN from the solution purified nanotubes. The photoluminescence peaks of both (7,5)- and (8,4)-SWCNT@BN heterostructures are found to redshift (by ∼10 nm) relative to the bare SWCNTs. Raman scattering suggests that the grown BN shells pose a confinement effect on the SWCNT core.
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Affiliation(s)
- Chiyu Zhang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Jacob Fortner
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Peng Wang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
| | - Jeffrey A Fagan
- Materials Science and Engineering Division, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Shuhui Wang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Ming Liu
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo 113-8656, Japan
| | - YuHuang Wang
- Department of Chemistry and Biochemistry, University of Maryland, 8051 Regents Drive, College Park, Maryland 20742, United States
- Maryland NanoCenter, University of Maryland, College Park, Maryland 20742, United States
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11
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Gao B, Lin S, Wan J, Cai H, Zhu Z. Buckling behavior of ternary one-dimensional van der Waals heterostructures. NANOTECHNOLOGY 2022; 34:015701. [PMID: 36167004 DOI: 10.1088/1361-6528/ac9531] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 09/27/2022] [Indexed: 06/16/2023]
Abstract
One-dimensional van der Waals heterostructures (1D vdWHs) may suffer from external compression when applied in field-effect, light-emitting and photovoltaic devices. Ternary 1D vdWHs were recently reported to be successfully synthesized (Xianget al2020Science367, 537). In present work, the buckling behavior of ternary 1D vdWH consisting of an inner carbon nanotube, a middle boron nitride nanotube and an outer molybdenum disulfide nanotube is extensively investigated by using molecular dynamics simulations. We find that the composite can effectively enhance the capability of axial compression of the inner nanotubes. The 1D vdWH gradually loses its stability under uniaxial compression and the critical stress of buckling decreases as the temperature increases. Slenderness ratioαof 4.8 ≤α≤ 7.2 has a slight influence on the strength and stability of ternary 1D vdWH under axial compression. To obtain a 1D vdWH with best compressive stability and strength, there is an optimal diameter existing for any specific length. Our work provides guidance for the design of 1D vdWH with desired compressive stability.
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Affiliation(s)
- Bingjie Gao
- School of Mechanics and Safety Engineering, Zhengzhou University, Zhengzhou, People's Republic of China
| | - Shu Lin
- School of Mechanics and Safety Engineering, Zhengzhou University, Zhengzhou, People's Republic of China
| | - Jing Wan
- School of Mechanics and Safety Engineering, Zhengzhou University, Zhengzhou, People's Republic of China
| | - Haifang Cai
- Science and Technology on Aerospace Chemical Power Laboratory, Xiangyang 441003, People's Republic of China
| | - Zuoquan Zhu
- School of Mathematics and Statistics, Zhengzhou Normal University, Zhengzhou, People's Republic of China
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12
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Guo SY, Hou PX, Zhang F, Liu C, Cheng HM. Gas Sensors Based on Single-Wall Carbon Nanotubes. Molecules 2022; 27:5381. [PMID: 36080149 PMCID: PMC9458085 DOI: 10.3390/molecules27175381] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/05/2022] [Revised: 08/21/2022] [Accepted: 08/21/2022] [Indexed: 11/16/2022] Open
Abstract
Single-wall carbon nanotubes (SWCNTs) have a high aspect ratio, large surface area, good stability and unique metallic or semiconducting electrical conductivity, they are therefore considered a promising candidate for the fabrication of flexible gas sensors that are expected to be used in the Internet of Things and various portable and wearable electronics. In this review, we first introduce the sensing mechanism of SWCNTs and the typical structure and key parameters of SWCNT-based gas sensors. We then summarize research progress on the design, fabrication, and performance of SWCNT-based gas sensors. Finally, the principles and possible approaches to further improving the performance of SWCNT-based gas sensors are discussed.
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Affiliation(s)
- Shu-Yu Guo
- School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Peng-Xiang Hou
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Feng Zhang
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Chang Liu
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, China
| | - Hui-Ming Cheng
- School of Materials Science and Engineering, Northeastern University, Shenyang 110819, China
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13
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Abstract
Layered van der Waals (vdW) materials have attracted significant attention due to their materials properties that can enhance diverse applications including next-generation computing, biomedical devices, and energy conversion and storage technologies. This class of materials is typically studied in the two-dimensional (2D) limit by growing them directly on bulk substrates or exfoliating them from parent layered crystals to obtain single or few layers that preserve the original bonding. However, these vdW materials can also function as a platform for obtaining additional phases of matter at the nanoscale. Here, we introduce and review a synthesis paradigm, morphotaxy, where low-dimensional materials are realized by using the shape of an initial nanoscale precursor to template growth or chemical conversion. Using morphotaxy, diverse non-vdW materials such as HfO2 or InF3 can be synthesized in ultrathin form by changing the composition but preserving the shape of the original 2D layered material. Morphotaxy can also enable diverse atomically precise heterojunctions and other exotic structures such as Janus materials. Using this morphotaxial approach, the family of low-dimensional materials can be substantially expanded, thus creating vast possibilities for future fundamental studies and applied technologies.
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Affiliation(s)
- David Lam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Dmitry Lebedev
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mark C Hersam
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208, United States
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14
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Guo J, Xiang R, Cheng T, Maruyama S, Li Y. One-Dimensional van der Waals Heterostructures: A Perspective. ACS NANOSCIENCE AU 2022; 2:3-11. [PMID: 37101518 PMCID: PMC10114641 DOI: 10.1021/acsnanoscienceau.1c00023] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 04/28/2023]
Abstract
As a new frontier in low-dimensional material research, van der Waals (vdW) heterostructures, represented by 2D heterostructures, have attracted tremendous attention due to their unique properties and potential applications. The emerging 1D heterostructures open new possibilities for the field with expectant unconventional properties and yet more challenging preparation pathways. This Perspective aims to give an overall understanding of the state-of-the-art growth strategies and fantastic properties of the 1D heterostructures and provide an outlook for further development based on the controlled preparation, which will bring up a variety of applications in high-performance electronic, optoelectronic, magnetic, and energy storage devices. A quick rise of the fundamentals and application study of 1D heterostructures is anticipated.
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Affiliation(s)
- Jia Guo
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Rong Xiang
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Ting Cheng
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Shigeo Maruyama
- Department
of Mechanical Engineering, The University
of Tokyo, Tokyo 113-8656, Japan
| | - Yan Li
- Beijing
National Laboratory for Molecular Sciences, Key Laboratory for the
Physics and Chemistry of Nanodevices, State Key Laboratory of Rare
Earth Materials Chemistry and Applications, College of Chemistry and
Molecular Engineering, Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Peking
University Shenzhen Institute, Shenzhen 518057, China
- PKU-HKUST
ShenZhen-HongKong Institution, Shenzhen 518057, China
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15
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 111] [Impact Index Per Article: 55.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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16
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Jadwiszczak J, Sherman J, Lynall D, Liu Y, Penkov B, Young E, Keneipp R, Drndić M, Hone JC, Shepard KL. Mixed-Dimensional 1D/2D van der Waals Heterojunction Diodes and Transistors in the Atomic Limit. ACS NANO 2022; 16:1639-1648. [PMID: 35014261 PMCID: PMC9526797 DOI: 10.1021/acsnano.1c10524] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Inverting a semiconducting channel is the basis of all field-effect transistors. In silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs), a gate dielectric mediates this inversion. Access to inversion layers may be granted by interfacing ultrathin low-dimensional semiconductors in heterojunctions to advance device downscaling. Here we demonstrate that monolayer molybdenum disulfide (MoS2) can directly invert a single-walled semiconducting carbon nanotube (SWCNT) transistor channel without the need for a gate dielectric. We fabricate and study this atomically thin one-dimensional/two-dimensional (1D/2D) van der Waals heterojunction and employ it as the gate of a 1D heterojunction field-effect transistor (1D-HFET) channel. Gate control is based on modulating the conductance through the channel by forming a lateral p-n junction within the CNT itself. In addition, we observe a region of operation exhibiting a negative static resistance after significant gate tunneling current passes through the junction. Technology computer-aided design (TCAD) simulations confirm the role of minority carrier drift-diffusion in enabling this behavior. The resulting van der Waals transistor architecture thus has the dual characteristics of both field-effect and tunneling transistors, and it advances the downscaling of heterostructures beyond the limits of dangling bonds and epitaxial constraints faced by III-V semiconductors.
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Affiliation(s)
- Jakub Jadwiszczak
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Jeffrey Sherman
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - David Lynall
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Yang Liu
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Boyan Penkov
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Erik Young
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Rachael Keneipp
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Marija Drndić
- Department of Physics and Astronomy, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - James C Hone
- Department of Mechanical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
| | - Kenneth L Shepard
- Department of Electrical Engineering, Columbia University, 500 West 120th Street, New York, New York 10027, United States
- Department of Biomedical Engineering, Columbia University, 1210 Amsterdam Avenue, New York, New York 10027, United States
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17
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Jiang JW. One-dimensional transition metal dichalcogenide lateral heterostructures. Phys Chem Chem Phys 2021; 23:27312-27319. [PMID: 34850785 DOI: 10.1039/d1cp04850c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/19/2022]
Abstract
Forming heterostructures is a well-established technique to utilize different constituent materials to achieve novel properties like efficient light emission and high-quality electron tunneling. Recent experiments have successfully synthesized one-dimensional van der Waals heterostructures and have discovered plenty of superior properties benefiting from the dimension reduction. Inspired by the success of the van der Waals counterparts, we propose a one-dimensional lateral heterostructure based on transition metal dichalcogenide nanotubes. Molecular simulations show that the misfit strain is restricted to the radial direction due to the one-dimensional tubular confined structure, and the regular exponential distribution of the radial misfit strain can be well interpreted by a mechanics model. Besides the normal exponential distribution, there also exists an abnormal strain distribution within a narrow domain nearby the interface, in which the structure of the larger lattice constant is stretched instead of compressed by the misfit strain. The abnormal misfit strain is due to the interplay between several bending interactions and the stretching interaction. Possible experiments to synthesize this new type of heterostructure are discussed based on current experimental techniques.
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Affiliation(s)
- Jin-Wu Jiang
- Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai Institute of Applied Mathematics and Mechanics, School of Mechanics and Engineering Science, Shanghai University, Shanghai, 200072, People's Republic of China.
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18
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One-dimensional van der Waals heterostructures: Growth mechanism and handedness correlation revealed by nondestructive TEM. Proc Natl Acad Sci U S A 2021; 118:2107295118. [PMID: 34508003 PMCID: PMC8449348 DOI: 10.1073/pnas.2107295118] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Accepted: 08/06/2021] [Indexed: 11/18/2022] Open
Abstract
We recently synthesized one-dimensional (1D) van der Waals heterostructures in which different atomic layers (e.g., boron nitride or molybdenum disulfide) seamlessly wrap around a single-walled carbon nanotube (SWCNT) and form a coaxial, crystalized heteronanotube. The growth process of 1D heterostructure is unconventional-different crystals need to nucleate on a highly curved surface and extend nanotubes shell by shell-so understanding the formation mechanism is of fundamental research interest. In this work, we perform a follow-up and comprehensive study on the structural details and formation mechanism of chemical vapor deposition (CVD)-synthesized 1D heterostructures. Edge structures, nucleation sites, and crystal epitaxial relationships are clearly revealed using transmission electron microscopy (TEM). This is achieved by the direct synthesis of heteronanotubes on a CVD-compatible Si/SiO2 TEM grid, which enabled a transfer-free and nondestructive access to many intrinsic structural details. In particular, we have distinguished different-shaped boron nitride nanotube (BNNT) edges, which are confirmed by electron diffraction at the same location to be strictly associated with its own chiral angle and polarity. We also demonstrate the importance of surface cleanness and isolation for the formation of perfect 1D heterostructures. Furthermore, we elucidate the handedness correlation between the SWCNT template and BNNT crystals. This work not only provides an in-depth understanding of this 1D heterostructure material group but also, in a more general perspective, serves as an interesting investigation on crystal growth on highly curved (radius of a couple of nanometers) atomic substrates.
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19
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Cambré S, Liu M, Levshov D, Otsuka K, Maruyama S, Xiang R. Nanotube-Based 1D Heterostructures Coupled by van der Waals Forces. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2102585. [PMID: 34355517 DOI: 10.1002/smll.202102585] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/01/2021] [Revised: 07/19/2021] [Indexed: 06/13/2023]
Abstract
1D van der Waals heterostructures based on carbon nanotube templates are raising a lot of excitement due to the possibility of creating new optical and electronic properties, by either confining molecules inside their hollow core or by adding layers on the outside of the nanotube. In contrast to their 2D analogs, where the number of layers, atomic type and relative orientation of the constituting layers are the main parameters defining physical properties, 1D heterostructures provide an additional degree of freedom, i.e., their specific diameter and chiral structure, for engineering their characteristics. The current state-of-the-art in synthesizing 1D heterostructures are discussed here, in particular focusing on their resulting optical properties, and details the vast parameter space that can be used to design heterostructures with custom-built properties that can be integrated into a large variety of applications. First, the effects of van der Waals coupling on the properties of the simplest and best-studied 1D heterostructure, namely a double-walled carbon nanotube, are described, and then heterostructures built from the inside and the outside are considered, which all use a nanotube as a template, and, finally, an outlook is provided for the future of this research field.
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Affiliation(s)
- Sofie Cambré
- Nanostructured and Organic Optical and Electronic Materials, Department of Physics, University of Antwerp, Antwerp 2610, Belgium
| | - Ming Liu
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Dmitry Levshov
- Nanostructured and Organic Optical and Electronic Materials, Department of Physics, University of Antwerp, Antwerp 2610, Belgium
| | - Keigo Otsuka
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Shigeo Maruyama
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
| | - Rong Xiang
- Department of Mechanical Engineering, The University of Tokyo, Tokyo, 113-8656, Japan
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