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Wright S, Brea C, Baxter JS, Saini S, Alsaç EP, Yoon SG, Boebinger MG, Hu G, McDowell MT. Epitaxial Metal Electrodeposition Controlled by Graphene Layer Thickness. ACS NANO 2024; 18:13866-13875. [PMID: 38751199 PMCID: PMC11140832 DOI: 10.1021/acsnano.4c02981] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2024] [Revised: 05/02/2024] [Accepted: 05/09/2024] [Indexed: 05/29/2024]
Abstract
Control over material structure and morphology during electrodeposition is necessary for material synthesis and energy applications. One approach to guide crystallite formation is to take advantage of epitaxy on a current collector to facilitate crystallographic control. Single-layer graphene on metal foils can promote "remote epitaxy" during Cu and Zn electrodeposition, resulting in growth of metal that is crystallographically aligned to the substrate beneath graphene. However, the substrate-graphene-deposit interactions that allow for epitaxial electrodeposition are not well understood. Here, we investigate how different graphene layer thicknesses (monolayer, bilayer, trilayer, and graphite) influence the electrodeposition of Zn and Cu. Scanning transmission electron microscopy and electron backscatter diffraction are leveraged to understand metal morphology and structure, demonstrating that remote epitaxy occurs on mono- and bilayer graphene but not trilayer or thicker. Density functional theory (DFT) simulations reveal the spatial electronic interactions through thin graphene that promote remote epitaxy. This work advances our understanding of electrochemical remote epitaxy and provides strategies for improving control over electrodeposition.
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Affiliation(s)
- Salem
C. Wright
- School
of Materials Science and Engineering, Georgia
Institute of Technology, Atlanta, Georgia 30332, United States
| | - Courtney Brea
- Department
of Chemistry and Biochemistry, Queens College
of the City University of New York, New York, New York 11367, United States
| | - Jefferey S. Baxter
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Sonakshi Saini
- School
of Materials Science and Engineering, Georgia
Institute of Technology, Atlanta, Georgia 30332, United States
| | - Elif Pınar Alsaç
- George
W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Sun Geun Yoon
- George
W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Matthew G. Boebinger
- Center
for Nanophase Materials Sciences, Oak Ridge
National Laboratory, Oak Ridge, Tennessee 37830, United States
| | - Guoxiang Hu
- School
of Materials Science and Engineering, Georgia
Institute of Technology, Atlanta, Georgia 30332, United States
| | - Matthew T. McDowell
- School
of Materials Science and Engineering, Georgia
Institute of Technology, Atlanta, Georgia 30332, United States
- George
W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
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2
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Alexis L, Lee J, Alvarez GA, Awale S, Jesus DSD, Lizcano M, Tian Z. Significantly Enhanced Thermal Conductivity of hBN/PTFE Composites: A Comprehensive Study of Filler Size and Dispersion. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38776549 DOI: 10.1021/acsami.4c03818] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2024]
Abstract
High-temperature polymers are attractive for applications in extreme temperatures, where they maintain their mechanical flexibility and electrical insulating properties. However, their heat dissipation capability is limited due to their intrinsically low thermal conductivities. Hexagonal boron nitride (hBN) is a chemically inert, thermally stable, and electrically insulative compound with a high thermal conductivity, making it an ideal candidate as a filler within a high-temperature polymer matrix to increase the thermal conductivity. This study evaluates the effect of filler size and dispersion on thermal conductivity by producing homogeneous composite samples using a combination of solvent mixing and resonant acoustic mixing (RAM). We carefully characterized our samples, including the spread of the size distribution, and observed that the smaller sized hBN centered around 5 μm was able to integrate more seamlessly into the polytetrafluoroethylene (PTFE) matrix with particle size in the 15 μm range and hence outperformed 30 μm, in contrast to the conventional wisdom, which asserts that larger fillers universally perform better than smaller ones. Our thermal conductivity of hBN/PTFE composites at 30 wt % is 2× higher than the literature values. Notably, we reached the record-high value of 3.5 W/m K at 40 wt % with an onset of percolation at 20 wt %, attributed to optimized hBN dispersion that facilitates the formation of thermal percolation. Our findings provide general guidelines to enhance the thermal conductivity of polymer composites for thermal management, ranging from power transmission to microelectronics cooling.
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Affiliation(s)
- Liam Alexis
- Cornell University Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca New York 14853, United States
| | - Jaejun Lee
- Cornell University Department of Materials Science and Engineering, Cornell University, Ithaca New York 14853, United States
| | - Gustavo A Alvarez
- Cornell University Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca New York 14853, United States
| | - Samer Awale
- Cornell University Department of Materials Science and Engineering, Cornell University, Ithaca New York 14853, United States
| | | | - Maricela Lizcano
- NASA Glenn Research Center, 21000 Brookpark Rd Cleveland Ohio 44135, United States
| | - Zhiting Tian
- Cornell University Sibley School of Mechanical and Aerospace Engineering, Cornell University, Ithaca New York 14853, United States
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3
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Diallo TM, Hanuš T, Patriarche G, Ruediger A, Boucherif A. Unraveling the Heterointegration of 3D Semiconductors on Graphene by Anchor Point Nucleation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306038. [PMID: 38009786 DOI: 10.1002/smll.202306038] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Revised: 10/31/2023] [Indexed: 11/29/2023]
Abstract
The heterointegration of graphene with semiconductor materials and the development of graphene-based hybrid functional devices are heavily bound to the control of surface energy. Although remote epitaxy offers one of the most appealing techniques for implementing 3D/2D heterostructures, it is only suitable for polar materials and is hugely dependent on the graphene interface quality. Here, the growth of defect-free single-crystalline germanium (Ge) layers on a graphene-coated Ge substrate is demonstrated by introducing a new approach named anchor point nucleation (APN). This powerful approach based on graphene surface engineering enables the growth of semiconductors on any type of substrate covered by graphene. Through plasma treatment, defects such as dangling bonds and nanoholes, which act as preferential nucleation sites, are introduced in the graphene layer. These experimental data unravel the nature of those defects, their role in nucleation, and the mechanisms governing this technique. Additionally, high-resolution transmission microscopy combined with geometrical phase analysis established that the as-grown layers are perfectly single-crystalline, stress-free, and oriented by the substrate underneath the engineered graphene layer. These findings provide new insights into graphene engineering by plasma and open up a universal pathway for the heterointegration of high-quality 3D semiconductors on graphene for disruptive hybrid devices.
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Affiliation(s)
- Thierno Mamoudou Diallo
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
| | - Tadeáš Hanuš
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
| | - Gilles Patriarche
- Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris-Saclay, Palaiseau, 91120, France
| | - Andreas Ruediger
- Nanoelectronics-Nanophotonics INRS-EMT, 1650, Boulevard Lionel-Boulet, Varennes, QC, J3×1P7, Canada
| | - Abderraouf Boucherif
- Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, QC, J1K 0A5, Canada
- Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS IRL-3463 Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, Québec, J1K0A5, Canada
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4
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Park BI, Kim J, Lu K, Zhang X, Lee S, Suh JM, Kim DH, Kim H, Kim J. Remote Epitaxy: Fundamentals, Challenges, and Opportunities. NANO LETTERS 2024; 24:2939-2952. [PMID: 38477054 DOI: 10.1021/acs.nanolett.3c04465] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/14/2024]
Abstract
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials. Remote epitaxy is recently introduced as a solution for growing single-crystalline thin films that can be exfoliated from host wafers and then transferred onto foreign platforms. This technology has quickly gained attention, as it can be applied to a wide variety of materials and can realize new functionalities and novel application platforms. Nevertheless, remote epitaxy is a delicate process, and thus, successful execution of remote epitaxy is often challenging. Here, we elucidate the mechanisms of remote epitaxy, summarize recent breakthroughs, and discuss the challenges and solutions in the remote epitaxy of various material systems. We also provide a vision for the future of remote epitaxy for studying fundamental materials science, as well as for functional applications.
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Affiliation(s)
- Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Hyunseok Kim
- Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
- Nick Holonyak, Jr. Micro and Nanotechnology Laboratory, University of Illinois Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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5
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Labed M, Park BI, Kim J, Park JH, Min JY, Hwang HJ, Kim J, Rim YS. Ultrahigh Photoresponsivity of W/Graphene/β-Ga 2O 3 Schottky Barrier Deep Ultraviolet Photodiodes. ACS NANO 2024; 18:6558-6569. [PMID: 38334310 DOI: 10.1021/acsnano.3c12415] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/10/2024]
Abstract
The integration of graphene with semiconductor materials has been studied for developing advanced electronic and optoelectronic devices. Here, we propose ultrahigh photoresponsivity of β-Ga2O3 photodiodes with a graphene monolayer inserted in a W Schottky contact. After inserting the graphene monolayer, we found a reduction in the leakage current and ideality factor. The Schottky barrier height was also shown to be about 0.53 eV, which is close to an ideal value. This was attributed to a decrease in the interfacial state density and the strong suppression of metal Fermi-level pinning. Based on a W/graphene/β-Ga2O3 structure, the responsivity and external quantum efficiency reached 14.49 A/W and 7044%, respectively. These values were over 100 times greater than those of the W contact alone. The rise and delay times of the W/graphene/β-Ga2O3 Schottky barrier photodiodes significantly decreased to 139 and 200 ms, respectively, compared to those obtained without a graphene interlayer (2000 and 3000 ms). In addition, the W/graphene/β-Ga2O3 Schottky barrier photodiode was highly stable, even at 150 °C.
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Affiliation(s)
- Madani Labed
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Jang Hyeok Park
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Ji Young Min
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
| | - Hee Jae Hwang
- Biomaterials Research Center, Korea Institution of Science and Technology, Seoul 02792, Republic of Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - You Seung Rim
- Department of Semiconductor Systems Engineering and Convergence Engineering for Intelligent Drone, Sejong University, Seoul 05006, Republic of Korea
- Institute of Semiconductor and System IC, Sejong University, Seoul 05006, Republic of Korea
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
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6
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Lee S, Abbas MS, Yoo D, Lee K, Fabunmi TG, Lee E, Kim HI, Kim I, Jang D, Lee S, Lee J, Park KT, Lee C, Kim M, Lee YS, Chang CS, Yi GC. Pulsed-Mode Metalorganic Vapor-Phase Epitaxy of GaN on Graphene-Coated c-Sapphire for Freestanding GaN Thin Films. NANO LETTERS 2023; 23:11578-11585. [PMID: 38051017 DOI: 10.1021/acs.nanolett.3c03333] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/07/2023]
Abstract
We report the growth of high-quality GaN epitaxial thin films on graphene-coated c-sapphire substrates using pulsed-mode metalorganic vapor-phase epitaxy, together with the fabrication of freestanding GaN films by simple mechanical exfoliation for transferable light-emitting diodes (LEDs). High-quality GaN films grown on the graphene-coated sapphire substrates were easily lifted off by using thermal release tape and transferred onto foreign substrates. Furthermore, we revealed that the pulsed operation of ammonia flow during GaN growth was a critical factor for the fabrication of high-quality freestanding GaN films. These films, exhibiting excellent single crystallinity, were utilized to fabricate transferable GaN LEDs by heteroepitaxially growing InxGa1-xN/GaN multiple quantum wells and a p-GaN layer on the GaN films, showing their potential application in advanced optoelectronic devices.
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Affiliation(s)
- Seokje Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Muhammad S Abbas
- Department of Physics, Sungkyunkwan University College of Natural Science, Suwon 16419, Republic of Korea
- Centre for Advanced Studies in Physics (CASP), Government College University Lahore, Lahore 54000, Pakistan
| | - Dongha Yoo
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Keundong Lee
- Department of Electrical and Computer Engineering, University of California San Diego, La Jolla, California 92093, United States
| | - Tobiloba G Fabunmi
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Eunsu Lee
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Han Ik Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Imhwan Kim
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Daniel Jang
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sangmin Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Jusang Lee
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Ki-Tae Park
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Changgu Lee
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
- School of Mechanical Engineering, Sungkyunkwan University College of Engineering, Suwon 16419, Republic of Korea
| | - Miyoung Kim
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul 08826, Republic of Korea
| | - Celesta S Chang
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
| | - Gyu-Chul Yi
- Department of Physics and Astronomy, Seoul National University, Seoul 08826, Republic of Korea
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7
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Kwak HM, Kim J, Lee JS, Kim J, Baik J, Choi SY, Shin S, Kim JS, Mun SH, Kim KP, Oh SH, Lee DS. 2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59025-59036. [PMID: 38084630 DOI: 10.1021/acsami.3c14076] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
The production of freestanding membranes using two-dimensional (2D) materials often involves techniques such as van der Waals (vdW) epitaxy, quasi-vdW epitaxy, and remote epitaxy. However, a challenge arises when attempting to manufacture freestanding GaN by using these 2D-material-assisted growth techniques. The issue lies in securing stability, as high-temperature growth conditions under metal-organic chemical vapor deposition (MOCVD) can cause damage to the 2D materials due to GaN decomposition of the substrate. Even when GaN is successfully grown using this method, damage to the 2D material leads to direct bonding with the substrate, making the exfoliation of the grown GaN nearly impossible. This study introduces an approach for GaN growth and exfoliation on 2D material/GaN templates. First, graphene and hexagonal boron nitride (h-BN) were transferred onto the GaN template, creating stable conditions under high temperatures and various gases in MOCVD. GaN was grown in a two-step process at 750 and 900 °C, ensuring exfoliation in cases where the 2D materials remained intact. Essentially, while it is challenging to grow GaN on 2D material/GaN using only MOCVD, this study demonstrates that with effective protection of the 2D material, the grown GaN can endure high temperatures and still be exfoliated. Furthermore, these results support that vdW epitaxy and remote epitaxy principle are not only possible with specific equipment but also applicable generally.
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Affiliation(s)
- Hoe-Min Kwak
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jongil Kim
- Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju 58330, Republic of Korea
| | - Je-Sung Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jeongwoon Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jaeyoung Baik
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Soo-Young Choi
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Sunwoo Shin
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Jin-Soo Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Seung-Hyun Mun
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Kyung-Pil Kim
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
| | - Sang Ho Oh
- Department of Energy Engineering, Institute for Energy Materials and Devices, Korea Institute of Energy Technology (KENTECH), 200 Hyeoksin-ro, Naju 58330, Republic of Korea
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
- Department of Semiconductor Engineering, Gwangju Institute of Science and Technology (GIST), 123 Cheomdangwagi-ro, Buk-gu, Gwangju 61005, Republic of Korea
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8
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Roberts DM, Kim H, McClure EL, Lu K, Mangum JS, Braun AK, Ptak AJ, Schulte KL, Kim J, Simon J. Nucleation and Growth of GaAs on a Carbon Release Layer by Halide Vapor Phase Epitaxy. ACS OMEGA 2023; 8:45088-45095. [PMID: 38046304 PMCID: PMC10688164 DOI: 10.1021/acsomega.3c07162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 09/18/2023] [Revised: 11/02/2023] [Accepted: 11/07/2023] [Indexed: 12/05/2023]
Abstract
We couple halide vapor phase epitaxy (HVPE) growth of III-V materials with liftoff from an ultrathin carbon release layer to address two significant cost components in III-V device - epitaxial growth and substrate reusability. We investigate nucleation and growth of GaAs layers by HVPE on a thin amorphous carbon layer that can be mechanically exfoliated, leaving the substrate available for reuse. We study nucleation as a function of carbon layer thickness and growth rate and find island-like nucleation. We then study various GaAs growth conditions, including V/III ratio, growth temperature, and growth rate in an effort to minimize film roughness. High growth rates and thicker films lead to drastically smoother surfaces with reduced threading dislocation density. Finally, we grow an initial photovoltaic device on a carbon release layer that has an efficiency of 7.2%. The findings of this work show that HVPE growth is compatible with a carbon release layer and presents a path toward lowering the cost of photovoltaics with high throughput growth and substrate reuse.
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Affiliation(s)
- Dennice M. Roberts
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Hyunseok Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | | | - Kuangye Lu
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John S. Mangum
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Anna K. Braun
- Colorado
School of Mines, Golden, Colorado 80401, United
States
| | - Aaron J. Ptak
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Kevin L. Schulte
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
| | - Jeehwan Kim
- Massachusetts
Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - John Simon
- National
Renewable Energy Laboratory, Golden, Colorado 80401, United States
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9
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Chang CS, Kim KS, Park BI, Choi J, Kim H, Jeong J, Barone M, Parker N, Lee S, Zhang X, Lu K, Suh JM, Kim J, Lee D, Han NM, Moon M, Lee YS, Kim DH, Schlom DG, Hong YJ, Kim J. Remote epitaxial interaction through graphene. SCIENCE ADVANCES 2023; 9:eadj5379. [PMID: 37862426 DOI: 10.1126/sciadv.adj5379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/02/2023] [Accepted: 09/19/2023] [Indexed: 10/22/2023]
Abstract
The concept of remote epitaxy involves a two-dimensional van der Waals layer covering the substrate surface, which still enable adatoms to follow the atomic motif of the underlying substrate. The mode of growth must be carefully defined as defects, e.g., pinholes, in two-dimensional materials can allow direct epitaxy from the substrate, which, in combination with lateral epitaxial overgrowth, could also form an epilayer. Here, we show several unique cases that can only be observed for remote epitaxy, distinguishable from other two-dimensional material-based epitaxy mechanisms. We first grow BaTiO3 on patterned graphene to establish a condition for minimizing epitaxial lateral overgrowth. By observing entire nanometer-scale nuclei grown aligned to the substrate on pinhole-free graphene confirmed by high-resolution scanning transmission electron microscopy, we visually confirm that remote epitaxy is operative at the atomic scale. Macroscopically, we also show variations in the density of GaN microcrystal arrays that depend on the ionicity of substrates and the number of graphene layers.
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Affiliation(s)
- Celesta S Chang
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ki Seok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Bo-In Park
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Joonghoon Choi
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Hyunseok Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Junseok Jeong
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Matthew Barone
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Nicholas Parker
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
| | - Sangho Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Kuangye Lu
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jun Min Suh
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Jekyung Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Doyoon Lee
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Ne Myo Han
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Mingi Moon
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Yun Seog Lee
- Department of Mechanical Engineering, Seoul National University, Seoul, Republic of Korea
| | - Dong-Hwan Kim
- School of Chemical Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
- Biomedical Institute for Convergence at SKKU (BICS), Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Darrell G Schlom
- Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14850, USA
- Kavli Institute at Cornell for Nanoscale Science, Ithaca, NY 14853, USA
- Leibniz-Institut für Kristallzüchtung, 12489 Berlin, Germany
| | - Young Joon Hong
- GRI-TPC International Research Center and Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Jeehwan Kim
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
- Microelectronic Technology Laboratory, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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10
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Meng Y, Zhong H, Xu Z, He T, Kim JS, Han S, Kim S, Park S, Shen Y, Gong M, Xiao Q, Bae SH. Functionalizing nanophotonic structures with 2D van der Waals materials. NANOSCALE HORIZONS 2023; 8:1345-1365. [PMID: 37608742 DOI: 10.1039/d3nh00246b] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/24/2023]
Abstract
The integration of two-dimensional (2D) van der Waals materials with nanostructures has triggered a wide spectrum of optical and optoelectronic applications. Photonic structures of conventional materials typically lack efficient reconfigurability or multifunctionality. Atomically thin 2D materials can thus generate new functionality and reconfigurability for a well-established library of photonic structures such as integrated waveguides, optical fibers, photonic crystals, and metasurfaces, to name a few. Meanwhile, the interaction between light and van der Waals materials can be drastically enhanced as well by leveraging micro-cavities or resonators with high optical confinement. The unique van der Waals surfaces of the 2D materials enable handiness in transfer and mixing with various prefabricated photonic templates with high degrees of freedom, functionalizing as the optical gain, modulation, sensing, or plasmonic media for diverse applications. Here, we review recent advances in synergizing 2D materials to nanophotonic structures for prototyping novel functionality or performance enhancements. Challenges in scalable 2D materials preparations and transfer, as well as emerging opportunities in integrating van der Waals building blocks beyond 2D materials are also discussed.
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Affiliation(s)
- Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Hongkun Zhong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Zhihao Xu
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Tiantian He
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Justin S Kim
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Sangmoon Han
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Sunok Kim
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
| | - Seoungwoong Park
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
| | - Yijie Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, Singapore
- Optoelectronics Research Centre, University of Southampton, Southampton, UK
| | - Mali Gong
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Qirong Xiao
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing, China.
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in St. Louis, St. Louis, MO, USA
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11
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Chen Q, Yang K, Liang M, Kang J, Yi X, Wang J, Li J, Liu Z. Lattice modulation strategies for 2D material assisted epitaxial growth. NANO CONVERGENCE 2023; 10:39. [PMID: 37626161 PMCID: PMC10457265 DOI: 10.1186/s40580-023-00388-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2023] [Accepted: 08/13/2023] [Indexed: 08/27/2023]
Abstract
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel optoelectronics and electronics development and opens a pathway for the next-generation integrated system fabrication. Studying and understanding the lattice modulation mechanism in 2D-material-assisted epitaxy could greatly benefit its practical application and further development. In this review, we overview the tremendous experimental and theoretical findings in varied 2D-material-assisted epitaxy. The lattice guidance mechanism and corresponding epitaxial relationship construction strategy in remote epitaxy, van der Waals epitaxy, and quasi van der Waals epitaxy are discussed, respectively. Besides, the possible application scenarios and future development directions of 2D-material-assisted epitaxy are also given. We believe the discussions and perspectives exhibited here could help to provide insight into the essence of the 2D-material-assisted epitaxy and motivate novel structure design and offer solutions to heterogeneous integration via the 2D-material-assisted epitaxy method.
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Affiliation(s)
- Qi Chen
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Kailai Yang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Meng Liang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junjie Kang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
| | - Xiaoyan Yi
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junxi Wang
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jinmin Li
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhiqiang Liu
- Research and Development Center for Semiconductor Lighting Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China.
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12
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Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X. Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. SCIENCE ADVANCES 2023; 9:eadf8484. [PMID: 37531436 PMCID: PMC10396303 DOI: 10.1126/sciadv.adf8484] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/17/2022] [Accepted: 07/05/2023] [Indexed: 08/04/2023]
Abstract
Transferred graphene provides a promising III-nitride semiconductor epitaxial platform for fabricating multifunctional devices beyond the limitation of conventional substrates. Despite its tremendous fundamental and technological importance, it remains an open question on which kind of epitaxy is preferred for single-crystal III-nitrides. Popular answers to this include the remote epitaxy where the III-nitride/graphene interface is coupled by nonchemical bonds, and the quasi-van der Waals epitaxy (quasi-vdWe) where the interface is mainly coupled by covalent bonds. Here, we show the preferred one on wet-transferred graphene is quasi-vdWe. Using aluminum nitride (AlN), a strong polar III-nitride, as an example, we demonstrate that the remote interaction from the graphene/AlN template can inhibit out-of-plane lattice inversion other than in-plane lattice twist of the nuclei, resulting in a polycrystalline AlN film. In contrast, quasi-vdWe always leads to single-crystal film. By answering this long-standing controversy, this work could facilitate the development of III-nitride semiconductor devices on two-dimensional materials such as graphene.
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Affiliation(s)
- Fang Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Tao Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871, China
| | - Xin Gao
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huaiyuan Yang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhihong Zhang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, Institute for Multidisciplinary Innovation, University of Science and Technology Beijing, Beijing 100083, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Yucheng Guo
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Ye Yuan
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Zhen Huang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Jilin Tang
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Bowen Sheng
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Zhaoying Chen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
| | - Bo Shen
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Xin-Zheng Li
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Interdisciplinary Institute of Light-Element Quantum Materials, Research Center for Light-Element Advanced Materials, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
| | - Hailin Peng
- Center for Nano-chemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
- Beijing Graphene Institute, Beijing 100095, China
| | - Xinqiang Wang
- State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-optoelectronics, School of Physics, Peking University, Beijing 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu 226010, China
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13
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Wang K, Li XE, Yuan G, Liu Z, Yang H, Li Z, Diao W, Xiao F, Wu K, Shi J. A Spear and Shield-Inspired Ar Plasma Safeguard Few-Layer Black Phosphore with Firefighting of Epoxy Resin. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2301430. [PMID: 37093557 DOI: 10.1002/smll.202301430] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2023] [Revised: 03/20/2023] [Indexed: 05/03/2023]
Abstract
Appearing as an innovative and efficient strategy, a facile strategy of a plasma ball mill is carried out to prepare few-layer black phosphorus nanosheets (BPNSs), for abating the fire risk of epoxy resin (EP). A spear and shield-inspired Ar plasma emergeed through a plasma ball mill to prevent Ar@BP nanosheets from oxidation compared with the preparation of BP nanosheets (MBPNSs) in a mechanical ball mill. The absorption coefficient in the synchrotron radiation spectrum is increased by 16.91%, indicating that BP is effectively protected by Ar proof. The Vienna ab initio simulation reveals that the combination of Ar@BP with oxygen cannot proceed spontaneously with the binding energy of 4.44 eV. With the introduction of 1.5 wt% Ar@BP, the total heat release (THR), total smoke release (TSR), total smoke production(TSP), CO, and CO2 yield, compared with that of EP, are descended by 30.40%, 24.41%, 24.10%, 33.23%, and 37.60%, respectively, indicating excellent flame retardancy property. It is attributed to the condensed and gas phase function. Meanwhile, the tensile strength and elongation at break increase by 27.92% and 56.04%, respectively, with the incorporation of 1.5 wt% Ar@BP.
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Affiliation(s)
- Kunxin Wang
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Xiu-E Li
- Institute of Coal Chemistry, Chinese Academy of Sciences, Taiyuan, 030001, P. R. China
| | - Guoming Yuan
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Zhijun Liu
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Hui Yang
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Zhao Li
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Wenjie Diao
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- Guangdong Provincial Key Laboratory of Organic Polymer Materials for Electronics, Guangzhou, 510650, P. R. China
- CAS Engineering Laboratory for Special Fine Chemicals, Guangzhou, 510650, China
- CASH GCC Shaoguan Research Institute of Advanced Materials, Nanxiong, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Fei Xiao
- School of Safety Science and Emergency Management, Wuhan University of Technology, Luoshi Road 122, Wuhan, 430070, China
| | - Kun Wu
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
| | - Jun Shi
- Guangzhou Institute of Chemistry, Chinese Academy of Sciences, Guangzhou, 510650, P. R. China
- University of Chinese Academy of Sciences, Beijing, 10049, P. R. China
- New Materials Research Institute of CASCHEM (Chongqing) Co., Ltd, Chongqing, 400714, P. R. China
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14
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Kim H, Liu Y, Lu K, Chang CS, Sung D, Akl M, Qiao K, Kim KS, Park BI, Zhu M, Suh JM, Kim J, Jeong J, Baek Y, Ji YJ, Kang S, Lee S, Han NM, Kim C, Choi C, Zhang X, Choi HK, Zhang Y, Wang H, Kong L, Afeefah NN, Ansari MNM, Park J, Lee K, Yeom GY, Kim S, Hwang J, Kong J, Bae SH, Shi Y, Hong S, Kong W, Kim J. High-throughput manufacturing of epitaxial membranes from a single wafer by 2D materials-based layer transfer process. NATURE NANOTECHNOLOGY 2023; 18:464-470. [PMID: 36941360 DOI: 10.1038/s41565-023-01340-3] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2022] [Accepted: 02/03/2023] [Indexed: 05/21/2023]
Abstract
Layer transfer techniques have been extensively explored for semiconductor device fabrication as a path to reduce costs and to form heterogeneously integrated devices. These techniques entail isolating epitaxial layers from an expensive donor wafer to form freestanding membranes. However, current layer transfer processes are still low-throughput and too expensive to be commercially suitable. Here we report a high-throughput layer transfer technique that can produce multiple compound semiconductor membranes from a single wafer. We directly grow two-dimensional (2D) materials on III-N and III-V substrates using epitaxy tools, which enables a scheme comprised of multiple alternating layers of 2D materials and epilayers that can be formed by a single growth run. Each epilayer in the multistack structure is then harvested by layer-by-layer mechanical exfoliation, producing multiple freestanding membranes from a single wafer without involving time-consuming processes such as sacrificial layer etching or wafer polishing. Moreover, atomic-precision exfoliation at the 2D interface allows for the recycling of the wafers for subsequent membrane production, with the potential for greatly reducing the manufacturing cost.
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Affiliation(s)
- Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yunpeng Liu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kuangye Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Celesta S Chang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Dongchul Sung
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Marx Akl
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Kuan Qiao
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jun Min Suh
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jekyung Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Junseok Jeong
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - You Jin Ji
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungsu Kang
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Sangho Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chansoo Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Chanyeol Choi
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Xinyuan Zhang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Hyeong-Kyu Choi
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Haozhe Wang
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Lingping Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Nordin Noor Afeefah
- Institute of Power Engineering, Universiti Tenaga Nasional, Kajang, Malaysia
| | | | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul, Republic of Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul, Republic of Korea
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
- Department of Materials Science and Engineering, University of Virginia, Charlottesville, VA, USA
| | - Geun Young Yeom
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Republic of Korea
- SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University, Suwon, Republic of Korea
| | - Sungkyu Kim
- HMC, Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, Republic of Korea
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Jing Kong
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, MO, USA
- Institute of Materials Science and Engineering, Washington University in St Louis, St Louis, MO, USA
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Suklyun Hong
- Department of Physics, Graphene Research Institute and GRI-TPC International Research Center, Sejong University, Seoul, Republic of Korea.
| | - Wei Kong
- Department of Materials Science and Engineering, Westlake University, Hangzhou, Zhejiang, China.
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Microsystems Technology Laboratories, Massachusetts Institute of Technology, Cambridge, MA, USA.
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15
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Ji J, Kwak HM, Yu J, Park S, Park JH, Kim H, Kim S, Kim S, Lee DS, Kum HS. Understanding the 2D-material and substrate interaction during epitaxial growth towards successful remote epitaxy: a review. NANO CONVERGENCE 2023; 10:19. [PMID: 37115353 PMCID: PMC10147895 DOI: 10.1186/s40580-023-00368-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2023] [Accepted: 04/09/2023] [Indexed: 06/19/2023]
Abstract
Remote epitaxy, which was discovered and reported in 2017, has seen a surge of interest in recent years. Although the technology seemed to be difficult to reproduce by other labs at first, remote epitaxy has come a long way and many groups are able to consistently reproduce the results with a wide range of material systems including III-V, III-N, wide band-gap semiconductors, complex-oxides, and even elementary semiconductors such as Ge. As with any nascent technology, there are critical parameters which must be carefully studied and understood to allow wide-spread adoption of the new technology. For remote epitaxy, the critical parameters are the (1) quality of two-dimensional (2D) materials, (2) transfer or growth of 2D materials on the substrate, (3) epitaxial growth method and condition. In this review, we will give an in-depth overview of the different types of 2D materials used for remote epitaxy reported thus far, and the importance of the growth and transfer method used for the 2D materials. Then, we will introduce the various growth methods for remote epitaxy and highlight the important points in growth condition for each growth method that enables successful epitaxial growth on 2D-coated single-crystalline substrates. We hope this review will give a focused overview of the 2D-material and substrate interaction at the sample preparation stage for remote epitaxy and during growth, which have not been covered in any other review to date.
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Affiliation(s)
- Jongho Ji
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
| | - Hoe-Min Kwak
- School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea
| | - Jimyeong Yu
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Sangwoo Park
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea
| | - Jeong-Hwan Park
- Venture Business Laboratory, Nagoya University, Furo-Cho, Chikusa-ku, Nagoya, 464-8603, Japan
| | - Hyunsoo Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Seokgi Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, South Korea.
| | - Dong-Seon Lee
- School of Electrical Engineering and Computer Science, Gwnagju Institute of Science and Technology, Gwangju, South Korea.
| | - Hyun S Kum
- Department of Electrical and Electronic Engineering, Yonsei University, Seoul, South Korea.
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16
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Wang Y, Qu Y, Xu Y, Li D, Lu Z, Li J, Su X, Wang G, Shi L, Zeng X, Wang J, Cao B, Xu K. Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer. ACS NANO 2023; 17:4023-4033. [PMID: 36744849 DOI: 10.1021/acsnano.3c00026] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Remote epitaxy (RE), substrate polarity can "penetrate" two-dimensional materials (2DMs) and act on the epi-layer, showing a prospective universal growth strategy. However, essentially, the role that 2DMs plays in RE has not been deeply investigated so far. Here, the RE of single-crystal films on the weakest polarity/iconicity substrate is realized to reveal its essence physical properties. Graphene facilitates attenuative charge transfer (ACT) from a substrate to epi-layer to construct remote interactions. Interfacial atoms are assembled into "incommensurate" epitaxial relationships through graphene to reduce misfit dislocations in the epi-layer. Moreover, graphene reduces the atomic migration barrier, leading to a tendency toward a "layer-by-layer" growth mode. Such film growth mode is different with the conventional epitaxy (CE), and it is beneficial for the fast growth of epi-layers and the reduction of dislocations at coalescence boundaries. The insightful revelation of the role of graphene reveals the interface physics of RE and provides a more valuable guide to using 2DMs to expand three-dimensional materials (3DMs) for application in devices.
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Affiliation(s)
- Yuning Wang
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Yipu Qu
- School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei, Anhui230026, China
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan450001, China
| | - Yu Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
| | - Didi Li
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Physical Science and Technology, Shanghai Tech University, Shanghai201210, China
| | - Zhengqian Lu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- School of Electrical and Information Engineering, Zhengzhou University, Zhengzhou, Henan450001, China
| | - Jianjie Li
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu215006, China
| | - Xujun Su
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Guobin Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Lin Shi
- School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng224051, China
| | - Xionghui Zeng
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
| | - Jianfeng Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
| | - Bing Cao
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou, Jiangsu215006, China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou, Jiangsu215006, China
| | - Ke Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu215123, China
- Suzhou Nanowin Science and Technology Co., Ltd., Suzhou215123, China
- Shenyang National Laboratory for Materials Science, Shenyang, Liaoning110010, China
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17
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Vertical full-colour micro-LEDs via 2D materials-based layer transfer. Nature 2023; 614:81-87. [PMID: 36725999 DOI: 10.1038/s41586-022-05612-1] [Citation(s) in RCA: 29] [Impact Index Per Article: 29.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/16/2022] [Accepted: 11/30/2022] [Indexed: 02/03/2023]
Abstract
Micro-LEDs (µLEDs) have been explored for augmented and virtual reality display applications that require extremely high pixels per inch and luminance1,2. However, conventional manufacturing processes based on the lateral assembly of red, green and blue (RGB) µLEDs have limitations in enhancing pixel density3-6. Recent demonstrations of vertical µLED displays have attempted to address this issue by stacking freestanding RGB LED membranes and fabricating top-down7-14, but minimization of the lateral dimensions of stacked µLEDs has been difficult. Here we report full-colour, vertically stacked µLEDs that achieve, to our knowledge, the highest array density (5,100 pixels per inch) and the smallest size (4 µm) reported to date. This is enabled by a two-dimensional materials-based layer transfer technique15-18 that allows the growth of RGB LEDs of near-submicron thickness on two-dimensional material-coated substrates via remote or van der Waals epitaxy, mechanical release and stacking of LEDs, followed by top-down fabrication. The smallest-ever stack height of around 9 µm is the key enabler for record high µLED array density. We also demonstrate vertical integration of blue µLEDs with silicon membrane transistors for active matrix operation. These results establish routes to creating full-colour µLED displays for augmented and virtual reality, while also offering a generalizable platform for broader classes of three-dimensional integrated devices.
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18
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Yoon H, Truttmann TK, Liu F, Matthews BE, Choo S, Su Q, Saraswat V, Manzo S, Arnold MS, Bowden ME, Kawasaki JK, Koester SJ, Spurgeon SR, Chambers SA, Jalan B. Freestanding epitaxial SrTiO 3 nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. SCIENCE ADVANCES 2022; 8:eadd5328. [PMID: 36563139 PMCID: PMC9788776 DOI: 10.1126/sciadv.add5328] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The epitaxial growth of functional oxides using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining freestanding epitaxial nanomembranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically used in growing epitaxial oxides can damage graphene. Here, we demonstrate the successful use of hybrid molecular beam epitaxy for SrTiO3 growth that does not require an independent oxygen source, thus avoiding graphene damage. This approach produces epitaxial films with self-regulating cation stoichiometry. Furthermore, the film (46-nm-thick SrTiO3) can be exfoliated and transferred to foreign substrates. These results open the door to future studies of previously unattainable freestanding oxide nanomembranes grown in an adsorption-controlled manner by hybrid molecular beam epitaxy. This approach has potentially important implications for the commercial application of perovskite oxides in flexible electronics and as a dielectric in van der Waals thin-film electronics.
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Affiliation(s)
- Hyojin Yoon
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Tristan K. Truttmann
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Fengdeng Liu
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Bethany E. Matthews
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland,, WA 99352, USA
| | - Sooho Choo
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Qun Su
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Vivek Saraswat
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Sebastian Manzo
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Michael S. Arnold
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Mark E. Bowden
- Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Jason K. Kawasaki
- Department of Materials Science and Engineering, University of Wisconsin–Madison, Madison, WI 53706, USA
| | - Steven J. Koester
- Department of Electrical and Computer Engineering, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
| | - Steven R. Spurgeon
- Energy and Environment Directorate, Pacific Northwest National Laboratory, Richland,, WA 99352, USA
- Department of Physics, University of Washington, Seattle, WA 98195, USA
| | - Scott A. Chambers
- Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, WA 99352, USA
| | - Bharat Jalan
- Department of Chemical Engineering and Materials Science, University of Minnesota, Twin Cities, Minneapolis, MN 55455, USA
- Corresponding author.
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19
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Du D, Jung T, Manzo S, LaDuca Z, Zheng X, Su K, Saraswat V, McChesney J, Arnold MS, Kawasaki JK. Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire. NANO LETTERS 2022; 22:8647-8653. [PMID: 36205576 DOI: 10.1021/acs.nanolett.2c03187] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Remote epitaxy is promising for the synthesis of lattice-mismatched materials, exfoliation of membranes, and reuse of expensive substrates. However, clear experimental evidence of a remote mechanism remains elusive. Alternative mechanisms such as pinhole-seeded epitaxy or van der Waals epitaxy can often explain the resulting films. Here, we show that growth of the Heusler compound GdPtSb on clean graphene/sapphire produces a 30° rotated (R30) superstructure that cannot be explained by pinhole epitaxy. With decreasing temperature, the fraction of this R30 domain increases, compared to the direct epitaxial R0 domain, which can be explained by a competition between remote versus pinhole epitaxy. Careful graphene/substrate annealing and consideration of the relative lattice mismatches are required to obtain epitaxy to the underlying substrate across a series of other Heusler films, including LaPtSb and GdAuGe. The R30 superstructure provides a possible experimental fingerprint of remote epitaxy, since it is inconsistent with the leading alternative mechanisms.
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Affiliation(s)
- Dongxue Du
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Taehwan Jung
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Sebastian Manzo
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Zachary LaDuca
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Xiaoqi Zheng
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Katherine Su
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Vivek Saraswat
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Jessica McChesney
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois60439, United States of America
| | - Michael S Arnold
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
| | - Jason Ken Kawasaki
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin53706, United States of America
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20
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Kim H, Lee S, Shin J, Zhu M, Akl M, Lu K, Han NM, Baek Y, Chang CS, Suh JM, Kim KS, Park BI, Zhang Y, Choi C, Shin H, Yu H, Meng Y, Kim SI, Seo S, Lee K, Kum HS, Lee JH, Ahn JH, Bae SH, Hwang J, Shi Y, Kim J. Graphene nanopattern as a universal epitaxy platform for single-crystal membrane production and defect reduction. NATURE NANOTECHNOLOGY 2022; 17:1054-1059. [PMID: 36138198 DOI: 10.1038/s41565-022-01200-6] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/16/2022] [Accepted: 07/22/2022] [Indexed: 06/16/2023]
Abstract
Heterogeneous integration of single-crystal materials offers great opportunities for advanced device platforms and functional systems1. Although substantial efforts have been made to co-integrate active device layers by heteroepitaxy, the mismatch in lattice polarity and lattice constants has been limiting the quality of the grown materials2. Layer transfer methods as an alternative approach, on the other hand, suffer from the limited availability of transferrable materials and transfer-process-related obstacles3. Here, we introduce graphene nanopatterns as an advanced heterointegration platform that allows the creation of a broad spectrum of freestanding single-crystalline membranes with substantially reduced defects, ranging from non-polar materials to polar materials and from low-bandgap to high-bandgap semiconductors. Additionally, we unveil unique mechanisms to substantially reduce crystallographic defects such as misfit dislocations, threading dislocations and antiphase boundaries in lattice- and polarity-mismatched heteroepitaxial systems, owing to the flexibility and chemical inertness of graphene nanopatterns. More importantly, we develop a comprehensive mechanics theory to precisely guide cracks through the graphene layer, and demonstrate the successful exfoliation of any epitaxial overlayers grown on the graphene nanopatterns. Thus, this approach has the potential to revolutionize the heterogeneous integration of dissimilar materials by widening the choice of materials and offering flexibility in designing heterointegrated systems.
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Affiliation(s)
- Hyunseok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Sangho Lee
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jiho Shin
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Menglin Zhu
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
| | - Marx Akl
- Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Kuangye Lu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ne Myo Han
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yongmin Baek
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Celesta S Chang
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Jun Min Suh
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Ki Seok Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Bo-In Park
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yanming Zhang
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA
| | - Chanyeol Choi
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Heechang Shin
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - He Yu
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Yuan Meng
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA
| | - Seung-Il Kim
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea
| | - Seungju Seo
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA
| | - Kyusang Lee
- Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, USA
| | - Hyun S Kum
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Jae-Hyun Lee
- Department of Energy Systems Research and Department of Materials Science and Engineering, Ajou University, Suwon, Republic of Korea
| | - Jong-Hyun Ahn
- School of Electrical and Electronic Engineering, Yonsei University, Seoul, Republic of Korea
| | - Sang-Hoon Bae
- Department of Mechanical Engineering and Materials Science, Washington University in Saint Louis, St. Louis, MO, USA.
- Institute of Materials Science and Engineering, Washington University in Saint Louis, St. Louis, MO, USA.
| | - Jinwoo Hwang
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA.
| | - Yunfeng Shi
- Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, USA.
| | - Jeehwan Kim
- Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, USA.
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21
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Zulqurnain M, Burton OJ, Al-Hada M, Goff LE, Hofmann S, Hirst LC. Defect seeded remote epitaxy of GaAs films on graphene. NANOTECHNOLOGY 2022; 33:485603. [PMID: 35977453 DOI: 10.1088/1361-6528/ac8a4f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2022] [Accepted: 08/15/2022] [Indexed: 06/15/2023]
Abstract
Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate. This allows for the subsequent release of the epitaxial film for integration with other systems and reuse of growth substrates. This approach is applicable to material systems with an ionic component to their bonding, making it notably appealing for III-V alloys, which are a technologically important family of materials. Chemical vapour deposition growth of graphene and wet transfer to a III-V substrate with a polymer handle is a potentially scalable and low cost approach to producing the required growth surface for remote epitaxy of these materials, however, the presence of water promotes the formation of a III-V oxide layer, which degrades the quality of subsequently grown epitaxial films. This work demonstrates the use of an argon ion beam for the controlled introduction of defects in a monolayer graphene interface layer to enable the growth of a single crystal GaAs film by molecular beam epitaxy, despite the presence of a native oxide at the substrate/graphene interface. A hybrid mechanism of defect seeded lateral overgrowth with remote epitaxy contributing the coalescence of the film is indicated. The exfoliation of the GaAs films reveals the presence of defect seeded nucleation sites, highlighting the need to balance the benefits of defect seeding on crystal quality against the requirement for subsequent exfoliation of the film, for future large area development of this approach.
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Affiliation(s)
- Muhammad Zulqurnain
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Oliver J Burton
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Mohamed Al-Hada
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Lucy E Goff
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
| | - Stephan Hofmann
- Department of Engineering, University of Cambridge, Cambridge CB3 0FA, United Kingdom
| | - Louise C Hirst
- Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge, CB3 0HE United Kingdom
- Department of Materials Science and Metallurgy, University of Cambridge, Cambridge, CB3 0FS United Kingdom
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22
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Manzo S, Strohbeen PJ, Lim ZH, Saraswat V, Du D, Xu S, Pokharel N, Mawst LJ, Arnold MS, Kawasaki JK. Pinhole-seeded lateral epitaxy and exfoliation of GaSb films on graphene-terminated surfaces. Nat Commun 2022; 13:4014. [PMID: 35851271 PMCID: PMC9293962 DOI: 10.1038/s41467-022-31610-y] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/05/2021] [Accepted: 06/17/2022] [Indexed: 11/25/2022] Open
Abstract
Remote epitaxy is a promising approach for synthesizing exfoliatable crystalline membranes and enabling epitaxy of materials with large lattice mismatch. However, the atomic scale mechanisms for remote epitaxy remain unclear. Here we experimentally demonstrate that GaSb films grow on graphene-terminated GaSb (001) via a seeded lateral epitaxy mechanism, in which pinhole defects in the graphene serve as selective nucleation sites, followed by lateral epitaxy and coalescence into a continuous film. Remote interactions are not necessary in order to explain the growth. Importantly, the small size of the pinholes permits exfoliation of continuous, free-standing GaSb membranes. Due to the chemical similarity between GaSb and other III-V materials, we anticipate this mechanism to apply more generally to other materials. By combining molecular beam epitaxy with in-situ electron diffraction and photoemission, plus ex-situ atomic force microscopy and Raman spectroscopy, we track the graphene defect generation and GaSb growth evolution a few monolayers at a time. Our results show that the controlled introduction of nanoscale openings in graphene provides an alternative route towards tuning the growth and properties of 3D epitaxial films and membranes on 2D material masks. Remote epitaxy represents a promising method for the synthesis of thin films on lattice-mismatched substrates, but its atomic-scale mechanisms are still unclear. Here, the authors demonstrate the growth of exfoliatable GaSb films on graphene-terminated GaSb (001) via seeded lateral epitaxy, showing that pinhole defects in graphene serve as selective nucleation sites.
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Affiliation(s)
- Sebastian Manzo
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Patrick J Strohbeen
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Zheng Hui Lim
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Vivek Saraswat
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Dongxue Du
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Shining Xu
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Nikhil Pokharel
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Luke J Mawst
- Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Michael S Arnold
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA
| | - Jason K Kawasaki
- Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI, 53706, USA.
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23
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MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates. NANOMATERIALS 2022; 12:nano12050785. [PMID: 35269273 PMCID: PMC8912371 DOI: 10.3390/nano12050785] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 02/02/2022] [Revised: 02/21/2022] [Accepted: 02/22/2022] [Indexed: 02/04/2023]
Abstract
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates using a wet transfer technique. The quality of the graphene interlayers was examined by Raman spectroscopy. The impact of the interlayer type on GaN nucleation was analyzed by scanning electron microscopy. The graphene interface and structural quality of GaN epilayers were studied by transmission electron microscopy and X-ray diffraction, respectively. The influence of the graphene interlayer type is discussed in terms of the differences between remote epitaxy and van der Waals epitaxy. The successful exfoliation of GaN membrane is demonstrated.
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24
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Kim Y, Watt J, Ma X, Ahmed T, Kim S, Kang K, Luk TS, Hong YJ, Yoo J. Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide. ACS NANO 2022; 16:2399-2406. [PMID: 35138803 DOI: 10.1021/acsnano.1c08779] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Advances in epitaxy have enabled the preparation of high-quality material architectures consisting of incommensurate components. Remote epitaxy based on lattice transparency of atomically thin graphene has been intensively studied for cost-effective advanced device manufacturing and heterostructure formation. However, remote epitaxy on nongraphene two-dimensional (2D) materials has rarely been studied even though it has a broad and immediate impact on various disciplines, such as many-body physics and the design of advanced devices. Herein, we report remote epitaxy of ZnO on monolayer MoS2 and the realization of a whispering-gallery-mode (WGM) cavity composed of a single crystalline ZnO nanorod and monolayer MoS2. Cross-sectional transmission electron microscopy and first-principles calculations revealed that the nongraphene 2D material interacted with overgrown and substrate layers and also exhibited lattice transparency. The WGM cavity embedding monolayer MoS2 showed enhanced luminescence of MoS2 and multimodal emission.
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Affiliation(s)
- Yeonhoo Kim
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - John Watt
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Xuedan Ma
- Center for Nanoscale Materials, Argonne National Laboratory, Lemont, Illinois 50439, United States
| | - Towfiq Ahmed
- T-4, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Suhyun Kim
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Kibum Kang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea
| | - Ting S Luk
- Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States
| | - Young Joon Hong
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Republic of Korea
| | - Jinkyoung Yoo
- Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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25
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Qu Y, Xu Y, Cao B, Wang Y, Wang J, Shi L, Xu K. Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene. ACS APPLIED MATERIALS & INTERFACES 2022; 14:2263-2274. [PMID: 34978790 DOI: 10.1021/acsami.1c18926] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Remote epitaxy is a very promising technique for the preparation of single-crystal thin films of flexibly transferred III-V group semiconductors. However, the epilayer nucleation mechanism of remote epitaxy and the epilayer-substrate interface interactions on both sides of graphene are not well-understood. In this study, remote homo- and heteroepitaxy of GaN nucleation layers (NLs) were performed by metal organic chemical vapor deposition on GaN, sapphire (Al2O3), and AlN substrates with transferred single-layer graphene, respectively. The results show that the interface damage of SLG/GaN at high temperature is difficult for us to achieve the remote homoepitaxy of GaN. Therefore, we explored the nucleation mechanism of remote heteroepitaxy of GaN on SLG/Al2O3 and SLG/AlN substrates. Nucleation density, surface coverage, diffusion coefficient, and scaled nucleation density were used to quantify the differences in nucleation information of GaN grown on different polar substrates. Using high-resolution X-ray diffraction and high-resolution transmission electron microscopy analysis, we revealed the interfacial orientation relationship and atomic arrangement distribution between the GaN NLs and substrates on both sides of the SLG. The electrostatic potential effect and adsorption ability of the substrates were further investigated by first-principles calculations based on density functional theory, revealing the principle that the substrate polarity affects the atomic nucleation density. The partial density of states shows that there is long-range orbital hybridization of the electronic states of the substrate and adsorbed atoms in remote epitaxy, and the crystal properties of the substrate play an important role in the in-plane orientation relationship of the NL and substrate across the SLG. The abovementioned results reveal the nature of remote epitaxy and broaden the perspective for the rapid and large-area preparation of single-crystal GaN films.
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Affiliation(s)
- Yipu Qu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
| | - Yu Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
| | - Bing Cao
- School of Optoelectronic Science and Engineering & Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215006, People's Republic of China
- Key Lab of Advanced Optical Manufacturing Technologies of Jiangsu Province & Key Lab of Modern Optical Technologies of Education Ministry of China, Soochow University, Suzhou 215006, People's Republic of China
| | - Yuning Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
| | - Jianfeng Wang
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
| | - Lin Shi
- School of Materials Science and Engineering, Yancheng Institute of Technology, Yancheng 224051, People's Republic of China
| | - Ke Xu
- Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS), Suzhou 215123, People's Republic of China
- Suzhou Nanowin Science and Technology Company Ltd., Suzhou 215123, People's Republic of China
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