Support-Free Transfer of Ultrasmooth Graphene Films Facilitated by Self-Assembled Monolayers for Electronic Devices and Patterns

Clean Transfer of Two-Dimensional Materials: A Comprehensive Review

The growth of two-dimensional (2D) materials through chemical vapor deposition (CVD) has sparked a growing interest among both the industrial and academic communities. The interest stems from several key advantages associated with CVD, including high yield, high quality, and high tunability. In order to harness the application potentials of 2D materials, it is often necessary to transfer them from their growth substrates to their desired target substrates. However, conventional transfer methods introduce contamination that can adversely affect the quality and properties of the transferred 2D materials, thus limiting their overall application performance. This review presents a comprehensive summary of the current clean transfer methods for 2D materials with a specific focus on the understanding of interaction between supporting layers and 2D materials. The review encompasses various aspects, including clean transfer methods, post-transfer cleaning techniques, and cleanliness assessment. Furthermore, it analyzes and compares the advances and limitations of these clean transfer techniques. Finally, the review highlights the primary challenges associated with current clean transfer methods and provides an outlook on future prospects.

SERS detection of surface-adsorbent toxic substances of microplastics based on gold nanoparticles and surface acoustic waves

Microplastics adsorb toxic substances and act as a transport medium. When microplastics adsorbed with toxic substances accumulate in the body, the microplastics and the adsorbed toxic substances can cause serious diseases, such as cancer. This work aimed to develop a surface-enhanced Raman spectroscopy (SERS) detection method for surface-adsorbent toxic substances by forming gold nanogaps on microplastics using surface acoustic waves (SAWs). Polystyrene microparticles (PSMPs; 1 μm) and polycyclic aromatic hydrocarbons (PAHs), including pyrene, anthracene, and fluorene, were selected as microplastics and toxic substances, respectively. Gold nanoparticles (AuNPs; 50 nm) were used as a SERS agent. The Raman characteristic peaks of the PAHs adsorbed on the surface of PSMPs were detected, and the SERS intensity and logarithm of the concentrations of pyrene, anthracene, and fluorene showed a linear relationship (R2 = 0.98), and the limits of detection were 95, 168, and 195 nM, respectively. Each PAH was detected on the surface of PSMPs, which were adsorbed with toxic substances in a mixture of three PAHs, indicating that the technique can be used to elucidate mixtures of toxic substances. The proposed SERS detection method based on SAWs could sense toxic substances that were surface-adsorbed on microplastics and can be utilized to monitor or track pollutants in aquatic environments.

Aggregation of Ag nanoparticle based on surface acoustic wave for surface-enhanced Raman spectroscopy detection of dopamine

BACKGROUND

Dopamine (DA), a vital neurotransmitter, plays a critical role in the human brain and relates to neuropsychiatric disorders such as Parkinson's disease and schizophrenia. Numerous studies have explored detection of such biomarkers through surface-enhanced Raman spectroscopy (SERS). However, most of the studies focused on SERS detection face significant challenges with plasmonic nanostructure development. Such challenges often include time-consuming processes, complex fabrication, specialized chemical labeling, poor reproducibility, and random hotspot generation. Therefore, the need for simple and rapid nanostructure development is evident in SERS.

RESULTS

We propose an innovative SERS-active sensing technique for 50 nm silver nanoparticle (AgNP) clustering based on surface acoustic wave (SAW). When a 1 μL droplet of AgNP colloid is dispensed onto the SAW-propagation zone, the AgNP cluster is deposited after the droplet completely evaporates, developing plasmonic nanogaps for SERS hotspot caused by spherical AgNP aggregation. By optimizing the SAW system through the hydrophobic treatment and modulation of the operational power, the SAW-induced AgNP clustering showed densely packed AgNP within a dot-like configuration (∼2200 AgNP μm-2), effectively preventing particle welding. The characterization of 4-mercaptobenzoic acid as a probe analyte revealed that concentrations as low as 1.14 pM was detected using our SAW-SERS system under 785 nm laser excitation. Moreover, DA was detected up to 4.28 nM with a determination of 0.99 (R2).

SIGNIFICANCE

This technique for AgNP clustering induced by SAW provides a rapid, in situ, label-free SERS sensing method with outstanding sensitivity and linearity. A mere act of dropping can create extensive plasmonic hotspots featuring nanogap of ∼1.5 nm. The SAW-induced AgNP clustering can serve as an ultrasensitive SERS-active substrate for diverse molecular detections, including neurotransmitter detection.

Toward Clean 2D Materials and Devices: Recent Progress in Transfer and Cleaning Methods

Two-dimensional (2D) materials have tremendous potential to revolutionize the field of electronics and photonics. Unlocking such potential, however, is hampered by the presence of contaminants that usually impede the performance of 2D materials in devices. This perspective provides an overview of recent efforts to develop clean 2D materials and devices. It begins by discussing conventional and recently developed wet and dry transfer techniques and their effectiveness in maintaining material "cleanliness". Multi-scale methodologies for assessing the cleanliness of 2D material surfaces and interfaces are then reviewed. Finally, recent advances in passive and active cleaning strategies are presented, including the unique self-cleaning mechanism, thermal annealing, and mechanical treatment that rely on self-cleaning in essence. The crucial role of interface wetting in these methods is emphasized, and it is hoped that this understanding can inspire further extension and innovation of efficient transfer and cleaning of 2D materials for practical applications.

Nanoscale goldbeating: Solid-state transformation of 0D and 1D gold nanoparticles to anisotropic 2D morphologies

Goldbeating is the ancient craft of thinning bulk gold (Au) into gossamer leaves. Pioneered by ancient Egyptian craftsmen, modern mechanized iterations of this technique can fabricate sheets as thin as ∼100 nm. We take inspiration from this millennia-old craft and adapt it to the nanoscale regime, using colloidally synthesized 0D/1D Au nanoparticles (AuNPs) as highly ductile and malleable nanoscopic Au ingots and subjecting them to solid-state, uniaxial compression. The applied stress induces anisotropic morphological transformation of AuNPs into 2D leaf form and elucidates insights into metal nanocrystal deformation at the extreme length scales. The induced 2D morphology is found to be dependent on the precursor 0D/1D NP morphology, size (0D nanosphere diameter and 1D nanorod diameter and length), and their on-substrate arrangement (e.g., interparticle separation and packing order) prior to compression. Overall, this versatile and generalizable solid-state compression technique enables new pathways to synthesize and investigate the anisotropic morphological transformation of arbitrary NPs and their resultant emergent phenomena.

Flexing the Spectrum: Advancements and Prospects of Flexible Electrochromic Materials

The application potential of flexible electrochromic materials for wearable devices, smart textiles, flexible displays, electronic paper, and implantable biomedical devices is enormous. These materials offer the advantages of conformability and mechanical robustness, making them highly desirable for these applications. In this review, we comprehensively examine the field of flexible electrochromic materials, covering topics such as synthesis methods, structure design, electrochromic mechanisms, and current applications. We also address the challenges associated with achieving flexibility in electrochromic materials and discuss strategies to overcome them. By shedding light on these challenges and proposing solutions, we aim to advance the development of flexible electrochromic materials. We also highlight recent advances in the field and present promising directions for future research. We intend to stimulate further innovation and development in this rapidly evolving field and encourage researchers to explore new opportunities and applications for flexible electrochromic materials. Through this review, readers can gain a comprehensive understanding of the synthesis, design, mechanisms, and applications of flexible electrochromic materials. It serves as a valuable resource for researchers and industry professionals looking to harness the potential of these materials for various technological applications.

The Road for 2D Semiconductors in the Silicon Age

Continued reduction in transistor size can improve the performance of silicon integrated circuits (ICs). However, as Moore's law approaches physical limits, high-performance growth in silicon ICs becomes unsustainable, due to challenges of scaling, energy efficiency, and memory limitations. The ultrathin layers, diverse band structures, unique electronic properties, and silicon-compatible processes of 2D materials create the potential to consistently drive advanced performance in ICs. Here, the potential of fusing 2D materials with silicon ICs to minimize the challenges in silicon ICs, and to create technologies beyond the von Neumann architecture, is presented, and the killer applications for 2D materials in logic and memory devices to ease scaling, energy efficiency bottlenecks, and memory dilemmas encountered in silicon ICs are discussed. The fusion of 2D materials allows the creation of all-in-one perception, memory, and computation technologies beyond the von Neumann architecture to enhance system efficiency and remove computing power bottlenecks. Progress on the 2D ICs demonstration is summarized, as well as the technical hurdles it faces in terms of wafer-scale heterostructure growth, transfer, and compatible integration with silicon ICs. Finally, the promising pathways and obstacles to the technological advances in ICs due to the integration of 2D materials with silicon are presented.

Multi-scale electronics transport properties in non-ideal CVD graphene sheet

In this work, we benchmark non-idealities and variations in the two-dimensional graphene sheet. We have simulated more than two hundred graphene-based devices structure. We have simulated distorted graphene sheets and have included random, inhomogeneous, asymmetric out-of-plane surface corrugation and in-plane deformation corrugation in the sheet through autocorrelation function in the non-equilibrium Green's function (NEGF) framework to introduce random distortion in flat graphene. These corrugation effects inevitably appear in the graphene sheet due to background substrate roughness or the passivation encapsulation material morphology in the transfer step. We have examined the variation in density of state, propagating density of transmission modes, electronic band structure, electronic density, and hole density in those device structures. We have observed that the surface corrugation increases the electronic and hole density distribution variation across the device and creates electron-hole charge puddles in the sheet. This redistribution of microscopic charge in the sheet is due to the lattice fields' quantum fluctuation and symmetry breaking. Furthermore, to understand the impact of scattered charge distribution on the sheet, we simulated various impurity effects within the NEGF framework. The study's objective is to numerically simulate and benchmark numerous device design morphology with different background materials compositions to elucidate the electrical property of the sheet device.

Recent Progress in the Transfer of Graphene Films and Nanostructures

The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly used bottom-up approaches have achieved efficient tuning of the electronic bandgap by customizing well-defined graphene nanostructures. The postgrowth transfer of graphene films/nanostructures to a certain substrate is crucial in utilizing graphene in applicable devices. In this review, the basic growth mechanism of CVD graphene is first introduced. Then, recent advances in various transfer methods of as-grown graphene to target substrates are presented. The fabrication and transfer methods of graphene nanostructures are also provided, and then the transfer-related applications are summarized. At last, the challenging issues and the potential transfer-free approaches are discussed.

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

Two-dimensional materials (2DMs) have been used widely in constructing photodetectors (PDs) because of their advantages in flexible integration and ultrabroad operation wavelength range. Specifically, 2DM PDs on silicon have attracted much attention because silicon microelectronics and silicon photonics have been developed successfully for many applications. 2DM PDs meet the imperious demand of silicon photonics on low-cost, high-performance, and broadband photodetection. In this work, a review is given for the recent progresses of Si/2DM PDs working in the wavelength band from near-infrared to mid-infrared, which are attractive for many applications. The operation mechanisms and the device configurations are summarized in the first part. The waveguide-integrated PDs and the surface-illuminated PDs are then reviewed in details, respectively. The discussion and outlook for 2DM PDs on silicon are finally given.

Impact of Polymer Residue Level on the In-Plane Thermal Conductivity of Suspended Large-Area Graphene Sheets

The presence of polymer transfer residues on graphene surfaces is a major bottleneck to overcome for the commercial and industrial viability of devices incorporating graphene layers. In particular, how clean the surface must be to recover high (>2500 W/mK) thermal conductivity and maximize the heat spreading capability of graphene for thermal management applications remains unclear. Here, we present the first systematic study of the impact of different levels of polymer residues on the in-plane thermal conductivity (κ_r) of single-layer graphene (SLG) fabricated by chemical vapor deposition (CVD). Control over the quantity of surface residue was achieved by varying the length of time each sample was rinsed in toluene to remove the poly(methyl methacrylate) (PMMA) support layer. The level of residue contamination was assessed using atomic force microscopy (AFM) and optical characterization. The thermal conductivity of the suspended SLG was measured using an optothermal Raman technique. We observed that the presence of polymer surface residue has a significant impact on the thermal properties of SLG, with the most heavily contaminated sample exhibiting a κ_r as low as (905 +155/-100) W/mK. Even without complete eradication of surface residues, a thermal conductivity as high as (3100 +1400/-900) W/mK was recovered, where the separation between adjacent clusters was sufficiently large (>700 nm). The proportion of the SLG surface covered by residues and the mean separation distance between clusters were found to be key factors in determining the level of κ_r suppression. This work has important implications for future large-scale graphene fabrication and transfer, particularly where graphene is to be used as a heat spreading layer in devices. The possibility of new opportunities for manipulation of the thermal properties of SLG via PMMA nanopatterning is also raised.

Materials Science Challenges to Graphene Nanoribbon Electronics

Graphene nanoribbons (GNRs) have recently emerged as promising candidates for channel materials in future nanoelectronic devices due to their exceptional electronic, thermal, and mechanical properties and chemical inertness. However, the adoption of GNRs in commercial technologies is currently hampered by materials science and integration challenges pertaining to synthesis and devices. In this Review, we present an overview of the current status of challenges, recent breakthroughs toward overcoming these challenges, and possible future directions for the field of GNR electronics. We motivate the need for exploration of scalable synthetic techniques that yield atomically precise, placed, registered, and oriented GNRs on CMOS-compatible substrates and stimulate ideas for contact and dielectric engineering to realize experimental performance close to theoretically predicted metrics. We also briefly discuss unconventional device architectures that could be experimentally investigated to harness the maximum potential of GNRs in future spintronic and quantum information technologies.

Towards large-scale graphene transfer

The transfer process is crucial for obtaining high-quality graphene for its large-scale industrial application. In this review, graphene transfer methods are systematically classified along with an analysis of the contamination or impurity of graphene that is introduced during the transfer process. Two key processes are emphasized, the substrate removal process and the direct/indirect transfer of graphene. Based on the efficiency and cost factors of industrial scale production, various transfer methods are summarized and evaluated. Potential transfer technologies and future research directions for industrial application are prospected.

Electrical, Transport, and Optical Properties of Multifunctional Graphitic Films Synthesized on Dielectric Surfaces by Nickel Nanolayer-Assisted Pyrolysis

We demonstrate that predepositing a nanometrically thin nickel film on a dielectric surface is sufficient to transform an amorphous pyrolyzed photoresist film (PPF) into a graphitic film (GRF) enriched with nickel particles. The GRF shows 3 orders of magnitude higher carrier mobility than the amorphous PPF, whereas its electrical conductivity doubles after etching away the nickel remains. The pronounced 2D peak in the Raman spectrum, almost dispersionless absorbance in the spectral range of 750-2000 nm, and the saturable absorption coefficient indicate that GRF possesses a graphene-like band structure. The proposed cost-efficient and scalable synthesis route opens avenues toward fabrication of micron size patterned graphitic structures of any shape directly on a dielectric substrate. Having graphene-like transport and electrical properties at 20 times higher absorbance than the single-layer graphene, GRF is attractive for fabrication of fast modulators for optical radiation, bolometers, and other photonics and optoelectronic devices that require enhanced optical absorption.

Waveguide-Integrated, Plasmonic Enhanced Graphene Photodetectors

We present a micrometer-scale, on-chip integrated, plasmonic enhanced graphene photodetector (GPD) for telecom wavelengths operating at zero dark current. The GPD is designed to directly generate a photovoltage by the photothermoelectric effect. It is made of chemical vapor deposited single layer graphene, and has an external responsivity ∼12.2 V/W with a 3 dB bandwidth ∼42 GHz. We utilize Au split-gates to electrostatically create a p-n-junction and simultaneously guide a surface plasmon polariton gap-mode. This increases the light-graphene interaction and optical absorption and results in an increased electronic temperature and steeper temperature gradient across the GPD channel. This paves the way to compact, on-chip integrated, power-efficient graphene based photodetectors for receivers in tele- and datacom modules.

Graphene and two-dimensional materials for silicon technology

The development of silicon semiconductor technology has produced breakthroughs in electronics-from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones-by downscaling the physical size of devices and wires to the nanometre regime. Now, graphene and related two-dimensional (2D) materials offer prospects of unprecedented advances in device performance at the atomic limit, and a synergistic combination of 2D materials with silicon chips promises a heterogeneous platform to deliver massively enhanced potential based on silicon technology. Integration is achieved via three-dimensional monolithic construction of multifunctional high-rise 2D silicon chips, enabling enhanced performance by exploiting the vertical direction and the functional diversification of the silicon platform for applications in opto-electronics and sensing. Here we review the opportunities, progress and challenges of integrating atomically thin materials with silicon-based nanosystems, and also consider the prospects for computational and non-computational applications.

Adlayer-Free Large-Area Single Crystal Graphene Grown on a Cu(111) Foil

To date, thousands of publications have reported chemical vapor deposition growth of "single layer" graphene, but none of them has described truly single layer graphene over large area because a fraction of the area has adlayers. It is found that the amount of subsurface carbon (leading to additional nuclei) in Cu foils directly correlates with the extent of adlayer growth. Annealing in hydrogen gas atmosphere depletes the subsurface carbon in the Cu foil. Adlayer-free single crystal and polycrystalline single layer graphene films are grown on Cu(111) and polycrystalline Cu foils containing no subsurface carbon, respectively. This single crystal graphene contains parallel, centimeter-long ≈100 nm wide "folds," separated by 20 to 50 µm, while folds (and wrinkles) are distributed quasi-randomly in the polycrystalline graphene film. High-performance field-effect transistors are readily fabricated in the large regions between adjacent parallel folds in the adlayer-free single crystal graphene film.

Epitaxial Growth of 6 in. Single-Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition

The future electronic application of graphene highly relies on the production of large-area high-quality single-crystal graphene. However, the growth of single-crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single-crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm² V^-1 s^-1 at room temperature. This work shines light on a way toward a much lower temperature growth of high-quality graphene in single crystallinity, which could benefit future electronic applications.

Wetting-Induced Climbing for Transferring Interfacially Assembled Large-Area Ultrathin Pristine Graphene Film

Owing to inherent 2D structure, marvelous mechanical, electrical, and thermal properties, graphene has great potential as a macroscopic thin film for surface coating, composite, flexible electrode, and sensor. Nevertheless, the production of large-area graphene-based thin film from pristine graphene dispersion is severely impeded by its poor solution processability. In this study, a robust wetting-induced climbing strategy is reported for transferring the interfacially assembled large-area ultrathin pristine graphene film. This strategy can quickly convert solvent-exfoliated pristine graphene dispersion into ultrathin graphene film on various substrates with different materials (glass, metal, plastics, and cloth), shapes (film, fiber, and bulk), and hydrophobic/hydrophilic patterns. It is also applicable to nanoparticles, nanofibers, and other exfoliated 2D nanomaterials for fabricating large-area ultrathin films. Alternate climbing of different ultrathin nanomaterial films allows a layer-by-layer transfer, forming a well-ordered layered composite film with the integration of multiple pristine nanomaterials at nanometer scale. This powerful strategy would greatly promote the development of solvent-exfoliated pristine nanomaterials from dispersions to macroscopic thin film materials.

Colossal grain growth yields single-crystal metal foils by contact-free annealing

Single-crystal metals have distinctive properties owing to the absence of grain boundaries and strong anisotropy. Commercial single-crystal metals are usually synthesized by bulk crystal growth or by deposition of thin films onto substrates, and they are expensive and small. We prepared extremely large single-crystal metal foils by “contact-free annealing” from commercial polycrystalline foils. The colossal grain growth (up to 32 square centimeters) is achieved by minimizing contact stresses, resulting in a preferred in-plane and out-of-plane crystal orientation, and is driven by surface energy minimization during the rotation of the crystal lattice followed by “consumption” of neighboring grains. Industrial-scale production of single-crystal metal foils is possible as a result of this discovery.

Folding Large Graphene-on-Polymer Films Yields Laminated Composites with Enhanced Mechanical Performance

A folding technique is reported to incorporate large-area monolayer graphene films in polymer composites for mechanical reinforcement. Compared with the classic stacking method, the folding strategy results in further stiffening, strengthening, and toughening of the composite. By using a water-air-interface-facilitated procedure, an A5-size 400 nm thin polycarbonate (PC) film is folded in half 10 times to a ≈0.4 mm thick material (1024 layers). A large PC/graphene film is also folded by the same process, resulting in a composite with graphene distributed uniformly. A three-point bending test is performed to study the mechanical performance of the composites. With a low volume fraction of graphene (0.085%), the Young's modulus, strength, and toughness modulus are enhanced in the folded composite by an average of 73.5%, 73.2%, and 59.1%, respectively, versus the pristine stacked polymer films, or 40.2%, 38.5%, and 37.3% versus the folded polymer film, proving a remarkable mechanical reinforcement from the combined folding and reinforcement of graphene. These results are rationalized with combined theoretical and computational analyses, which also allow the synergistic behavior between the reinforcement and folding to be quantified. The folding approach could be extended/applied to other 2D nanomaterials to design and make macroscale laminated composites with enhanced mechanical properties.

Wrinkle-Free Single-Crystal Graphene Wafer Grown on Strain-Engineered Substrates

Wrinkles are ubiquitous for graphene films grown on various substrates by chemical vapor deposition at high temperature due to the strain induced by thermal mismatch between the graphene and substrates, which greatly degrades the extraordinary properties of graphene. Here we show that the wrinkle formation of graphene grown on Cu substrates is strongly dependent on the crystallographic orientations. Wrinkle-free single-crystal graphene was grown on a wafer-scale twin-boundary-free single-crystal Cu(111) thin film fabricated on sapphire substrate through strain engineering. The wrinkle-free feature of graphene originated from the relatively small thermal expansion of the Cu(111) thin film substrate and the relatively strong interfacial coupling between Cu(111) and graphene, based on the strain analyses as well as molecular dynamics simulations. Moreover, we demonstrated the transfer of an ultraflat graphene film onto target substrates from the reusable single-crystal Cu(111)/sapphire growth substrate. The wrinkle-free graphene shows enhanced electrical mobility compared to graphene with wrinkles.

Stabilization of hybrid perovskite CH3NH3PbI3 thin films by graphene passivation

We report the long-term stability of water-sensitive hybrid perovskites CH₃NH₃PbI₃ that were protected with monolayer graphene. This successful passivation was enabled by our development of a new water-free and polymer-free graphene transfer method. Monolayer graphene samples grown by plasma-enhanced chemical vapor deposition and transferred onto different substrates with the water/polymer-free method were found to preserve their high-quality characteristics after the transfer, as manifested by the studies of Raman, X-ray and ultraviolet photoemission spectroscopy (XPS and UPS), optical absorption, and sheet resistance. Additionally, XPS, UPS and optical absorption studies of fully graphene-covered CH₃NH₃PbI₃ thin films showed spectral invariance even after 3 months, which was in sharp contrast to the drastic spectral changes after merely one week in control CH₃NH₃PbI₃ samples without graphene protection. This successful demonstration of the graphene-enabled passivation and long-term stability of CH₃NH₃PbI₃ thin films therefore opens up a new pathway towards realistic photovoltaic applications of hybrid perovskites.

Capacitive pressure sensing with suspended graphene-polymer heterostructure membranes

We describe the fabrication and characterisation of a capacitive pressure sensor formed by an ultra-thin graphene-polymer heterostructure membrane spanning a large array of micro-cavities each up to 30 μm in diameter with 100% yield. Sensors covering an area of just 1 mm² show reproducible pressure transduction under static and dynamic loading up to pressures of 250 kPa. The measured capacitance change in response to pressure is in good agreement with calculations. Further, we demonstrate high-sensitivity pressure sensors by applying a novel strained membrane transfer and optimising the sensor architecture. This method enables suspended structures with less than 50 nm of air dielectric gap, giving a pressure sensitivity of 123 aF Pa^-1 mm^-2 over a pressure range of 0 to 100 kPa.

Controlling Water Intercalation Is Key to a Direct Graphene Transfer

The key steps of a transfer of two-dimensional (2D) materials are the delamination of the as-grown material from a growth substrate and the lamination of the 2D material on a target substrate. In state-of-the-art transfer experiments, these steps remain very challenging, and transfer variations often result in unreliable 2D material properties. Here, it is demonstrated that interfacial water can insert between graphene and its growth substrate despite the hydrophobic behavior of graphene. It is understood that interfacial water is essential for an electrochemistry-based graphene delamination from a Pt surface. Additionally, the lamination of graphene to a target wafer is hindered by intercalation effects, which can even result in graphene delamination from the target wafer. For circumvention of these issues, a direct, support-free graphene transfer process is demonstrated, which relies on the formation of interfacial water between graphene and its growth surface, while avoiding water intercalation between graphene and the target wafer by using hydrophobic silane layers on the target wafer. The proposed direct graphene transfer also avoids polymer contamination (no temporary support layer) and eliminates the need for etching of the catalyst metal. Therefore, recycling of the growth template becomes feasible. The proposed transfer process might even open the door for the suggested atomic-scale interlocking-toy-brick-based stacking of different 2D materials, which will enable a more reliable fabrication of van der Waals heterostructure-based devices and applications.

Controlled Folding of Single Crystal Graphene

Folded graphene in which two layers are stacked with a twist angle between them has been predicted to exhibit unique electronic, thermal, and magnetic properties. We report the folding of a single crystal monolayer graphene film grown on a Cu(111) substrate by using a tailored substrate having a hydrophobic region and a hydrophilic region. Controlled film delamination from the hydrophilic region was used to prepare macroscopic folded graphene with good uniformity on the millimeter scale. This process was used to create many folded sheets each with a defined twist angle between the two sheets. By identifying the original lattice orientation of the monolayer graphene on Cu foil, or establishing the relation between the fold angle and twist angle, this folding technique allows for the preparation of twisted bilayer graphene films with defined stacking orientations and may also be extended to create folded structures of other two-dimensional nanomaterials.

Pristine Graphene Electrode in Hydrogen Evolution Reaction

Graphene, the sp² carbonaceous two-dimensional (2D) material, is gaining more attention in recent electrochemical studies. However, this atomic thick electrode usually suffers with surface contamination and poor electrochemical endurance. To overcome the drawbacks, we developed a PMMA-assisted, flipped transfer method to fabricate the graphene electrode with pristine surface and prolonged lifetime in hydrogen evolution reaction (HER). The HER performances of the single-layer graphene (SLG) were evaluated on various insulating and conductive substrates, including SiO₂, polymers, SLG, highly oriented pyrolytic graphite (HOPG), and copper. The parallel Tafel slopes of SLG, bilayer graphene (BLG), and HOPG suggest they share the same electrochemical activities deriving from the sp² carbon basal plane. Moreover, the atomic barriers, both for SLG and the single-layer h-BN (SLBN), are semitransparent in HER for the underneath copper, providing a new perspective for the 2D materials to protect and couple with the other electrochemical catalysts.

Direct transfer of graphene and application in low-voltage hybrid transistors

Scotch tape assisted direct transfer of graphene is presented. Transferred graphene can act as a carrier transport layer in In₂O₃/graphene/ZrO₂transistor.

Graphene Coatings as Barrier Layers to Prevent the Water-Induced Corrosion of Silicate Glass

Corrosion-protective coatings for silicate glass based on the transfer of one or two layers of graphene grown on copper by chemical vapor deposition have been demonstrated. The effectiveness of graphene to act as a glass corrosion inhibitor was evaluated by water immersion testing. After 120 days of immersion in water, bare glass samples had a significant increase in surface roughness and defects, which resulted in a marked reduction in fracture strength. In contrast, the single- and double-layer graphene-coated glasses experienced negligible changes in both fracture strength and surface roughness. The anticorrosion mechanism was also studied.

Facile Peeling Method as a Post-Remedy Strategy for Producing an Ultrasmooth Self-Assembled Monolayer for High-Performance Organic Transistors

The modification of dielectric surface with a self-assembled monolayer (SAM) such as octadecyltrichlorosilane (OTS) is a widely used method to tune the electrical property of diverse electronic devices based on organic semiconductors, graphene, transition metal dichalcogenides (TMDs), and so forth. The surface roughness of self-assembled OTS monolayer is a key factor in determining its effect on device performance, but the preparation of an ultrasmooth OTS monolayer is a technologically challenging task. In this work, an ultrasmooth OTS monolayer is prepared via a facile peeling method, which may serve as a postremedy strategy to remove the protuberant aggregates. Such a method has not been reported before. With organic semiconductors as a testing model, ultrasmooth OTS may significantly improve the charge mobility of organic field-effect transistors (OFETs). P-type dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) OFET with an ultrasmooth OTS monolayer yields good reproducibility and unprecendented maximum mobility of 8.16 cm(2) V(-1) s(-1), which is remarkably superior to that of the OFET with a pristine OTS monolayer. This work develops a simple method to resolve the common and significant problem of the quality of OTS modification, which would be highly promising for electronic applications as well as other fields such as surface and interface engineering.

Etchant-free graphene transfer using facile intercalation of alkanethiol self-assembled molecules at graphene/metal interfaces

We report a novel etchant-free transfer method of graphene using the intercalation of alkanethiol self-assembled monolayers (SAMs) at the graphene/Cu interfaces. The early stage of intercalation proceeds through graphene grain boundaries or defects within a few seconds at room temperature until stable SAMs are formed after a few hours. The formation of SAMs releases the compressive strain of graphene induced by Cu substrates and make graphene slightly n-doped due to the formation of interface dipoles of the SAMs on metal surfaces. After SAM formation, the graphene is easily delaminated off from the metal substrates and transferred onto insulating substrates. The etchant-free process enables us to decrease the density of charged impurities and the magnitude of potential fluctuation in the transferred graphene, which suppress scattering of carriers. We also demonstrate the removal of alkanethiol SAMs and reuse the substrate. This method will dramatically reduce the cost of graphene transfer, which will benefit industrial applications such as of graphene transparent electrodes.